WO2016065788A1 - 阵列基板的制作方法、阵列基板及显示装置 - Google Patents

阵列基板的制作方法、阵列基板及显示装置 Download PDF

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WO2016065788A1
WO2016065788A1 PCT/CN2015/074109 CN2015074109W WO2016065788A1 WO 2016065788 A1 WO2016065788 A1 WO 2016065788A1 CN 2015074109 W CN2015074109 W CN 2015074109W WO 2016065788 A1 WO2016065788 A1 WO 2016065788A1
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layer
array substrate
substrate
region
pattern
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PCT/CN2015/074109
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English (en)
French (fr)
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刘政
陆小勇
李小龙
刘建宏
龙春平
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京东方科技集团股份有限公司
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Priority to US14/785,777 priority Critical patent/US10096663B2/en
Publication of WO2016065788A1 publication Critical patent/WO2016065788A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
    • H01L27/1274—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
    • H01L27/1274—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
    • H01L27/1285—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/621—Providing a shape to conductive layers, e.g. patterning or selective deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/351—Thickness
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment

Definitions

  • Embodiments of the present invention relate to a method of fabricating an array substrate, an array substrate, and a display device.
  • Organic electroluminescent display panels are considered to have great application prospects in flat panel display due to their self-illumination, solid state, wide viewing angle, fast response, etc., after liquid crystal (LCD) and plasma (PDP) display devices.
  • LCD liquid crystal
  • PDP plasma
  • a conventional organic electroluminescent display panel mainly includes an organic light emitting diode (EL portion) and a driving thin film transistor.
  • the driving thin film transistor mainly includes an active layer 2' and a gate electrode formed on the base substrate 1'.
  • the EL portion mainly includes an anode layer 8' on the flat layer 7', and a pixel defining layer (PDL) 9 ', cathode layer 11' and organic light-emitting layer 10' between anode layer 8' and cathode layer 11'.
  • PDL pixel defining layer
  • the above two parts need different fabrication processes, and the organic light emitting diode process for fabricating the EL portion needs to be performed after the process of driving the thin film transistor is completed, and the fabrication processes of both are also performed.
  • the invention is complicated, which causes the organic electroluminescent display panel to have many manufacturing steps, long time and high cost.
  • a method for fabricating an array substrate including:
  • an array substrate includes a plurality of pixel units arranged in a matrix on a base substrate, each pixel unit including a thin film transistor structure, a cathode, an anode, and the cathode and the anode
  • a thin film transistor structure including a thin film transistor structure, a cathode, an anode, and the cathode and the anode
  • An organic light-emitting layer wherein the cathode is formed over a first region of the base substrate, and a gate of the thin film transistor structure is formed over a second region of the base substrate, the cathode
  • the gate of the thin film transistor structure is the same material and is in a single structure Formed in the drawing process.
  • a display device comprising the array substrate as described above.
  • FIG. 1 is a schematic structural view of an organic electroluminescent panel in the prior art
  • FIG. 2 is a flowchart of a method for fabricating an array substrate according to an embodiment of the present invention
  • FIG. 3 is a flow chart of another method for fabricating an array substrate according to an embodiment of the present invention.
  • 4-12 are schematic diagrams of fabricating an array substrate according to an embodiment of the invention.
  • the method for fabricating the array substrate includes:
  • S12 patterning the first conductive film, forming a pattern of a cathode over a first region of the substrate, and forming a pattern of a gate over a second region of the substrate.
  • the first region of the above substrate substrate is used to fabricate a light emitting diode (EL portion) in the organic electroluminescent panel, and the second region is used to fabricate a thin film transistor portion in the organic electroluminescent panel.
  • EL portion light emitting diode
  • the method for fabricating the array substrate provided by the embodiment of the present invention can simultaneously form the cathode layer of the light emitting diode and the gate layer of the thin film transistor in different regions of the base substrate by one patterning process, thereby reducing the complexity and process of the fabrication process of the array substrate. Time, simplifying the manufacturing process of the organic electroluminescent panel and reducing the manufacturing cost.
  • FIG. 3 is a flow chart of a method for fabricating an array substrate in an organic electroluminescent panel according to an embodiment of the present invention, the method comprising:
  • the base substrate 1 may be a transparent substrate such as pre-cleaned glass, formed in
  • the active layer 2 of the second region 12 may be a polysilicon layer in which an amorphous silicon layer is transformed by an amorphous silicon layer by excimer laser crystallization, metal induced crystallization, solid phase crystallization, or the like. It should be noted that the specific process and the structure of the thin film transistor will be different by different crystallization methods. In the preparation process, heat treatment dehydrogenation, deposition induction metal, heat treatment crystallization, excimer laser need to be added according to the situation.
  • the thickness of the active layer 2 is in one example, the thickness is
  • the active layer 2 may be formed by a PECVD, LPCVD or sputtering method at a deposition temperature of 600 ° C or lower.
  • the gate insulating layer 3 may be a single layer of silicon oxide, silicon nitride or a combination of the two, and may be used by PECVD (plasma enhanced chemical vapor deposition), LPCVD (low pressure chemical vapor deposition), APCVD (atmospheric pressure chemical vapor deposition). ) or ECR-CVD (electron cyclotron resonance chemical vapor deposition) deposition, etc., thickness
  • PECVD plasma enhanced chemical vapor deposition
  • LPCVD low pressure chemical vapor deposition
  • APCVD atmospheric pressure chemical vapor deposition
  • ECR-CVD electrochemical cyclotron resonance chemical vapor deposition
  • the first conductive film 100 may be a single layer, two layers or more, and is composed of a transparent conductive material such as indium tin oxide, indium zinc oxide, or the like. Or a metal, a metal alloy such as silver or a silver alloy and a transparent conductive material formed on the upper layer of the metal, the thickness can be Within the range, for example, the thickness is a cathode layer for forming an organic light emitting diode and a gate layer of the thin film transistor;
  • the insulating layer film 200 may be an organic material, and an organic photoresist material such as polyimide or acrylic may be selected, and the thickness may be
  • S25 patterning the insulating layer film and the gate insulating layer, forming a pattern of a pixel defining layer over the first region of the base substrate, forming over the source and drain regions of the active layer hole.
  • the insulating layer film 200 is etched in the first region 11
  • a via hole 210 is formed above the cathode layer 11, and a pixel defining layer 9 is formed.
  • a source/drain via 220 is formed over the source/drain region of the active layer, so that the patterned insulating film can be used as a pixel defining layer.
  • the second conductive film 300 may also be a single layer, two layers or two or more layers, and the active layer 2 is contacted through the via 220, and the second conductive film may be a transparent conductive material such as indium tin oxide, indium zinc oxide, or the like, or a metal, a metal alloy such as silver or a silver alloy, and a transparent conductive material formed on the upper layer of the metal, the thickness can be In the range, in one example, the thickness is An anode layer for forming an organic light emitting material and a source and a drain of the thin film transistor;
  • a pattern of the anode 8 is formed over the first region 11 of the base substrate, and a source and drain are formed above the second region 12 of the substrate substrate.
  • the pattern of the pole 6 includes the pattern of the source and the pattern of the drain connected to the anode 8.
  • at least one of the first conductive film and the second conductive film is made of a transparent material so that light emitted from the EL portion can be irradiated.
  • the first conductive film can have a reflective property.
  • a metal material, the second conductive film may be a transparent metal material.
  • the cathode layer of the organic light emitting diode and the gate layer of the thin film transistor are simultaneously formed by the first patterning process, and the insulating layer film is patterned by the second patterning process.
  • the patterned insulating layer film can be used as a pixel defining layer, and can also be used as a flat layer and an intermediate insulating layer, and the anode layer of the organic light emitting diode and the source and drain of the thin film transistor are simultaneously formed by the third patterning process.
  • the manufacturing method of the organic electroluminescent panel in the technology can greatly reduce the complexity and process time of the fabrication process of the array substrate, simplify the manufacturing process of the organic electroluminescent panel, and reduce the manufacturing cost.
  • an embodiment of the present invention further provides an array substrate including a plurality of pixel units arranged in a matrix on a base substrate, each pixel unit including a thin film transistor structure, a cathode, an anode, and the cathode and the anode Between the organic light-emitting layers.
  • the cathode is formed over a first region of the base substrate, and a gate of the thin film transistor structure is formed over a second region of the base substrate, the cathode being the same as a gate of the thin film transistor structure
  • the material is formed in a patterning process.
  • each pixel unit further includes a pixel defining layer formed over the cathode and formed on a flat layer above the gate, the pixel defining layer being the same material as the planar layer and formed in a single patterning process.
  • the pixel definition layer and the flat layer are located in the same layer.
  • the organic light emitting layer is formed over the cathode
  • the anode is formed over the organic light emitting layer
  • a source and a drain of the thin film transistor structure are formed on the flat
  • the anode, the source and the drain are of the same material and are formed in a single patterning process.
  • the anode, the source, and the drain are in the same layer.
  • the first conductive film and the second conductive film may be a metal film formed of a metal material, or may be formed of a transparent conductive material such as a transparent metal oxide, or a metal material and a transparent metal oxide material.
  • the laminate is formed.
  • at least one of the first conductive film and the second conductive film is a transparent material for light emission of the EL portion; in one example, the material of the first conductive film is a material having a reflective property
  • the material of the second conductive film is a transparent conductive material.
  • an embodiment of the present invention further provides a display device including the above array substrate.
  • the display device provided by the embodiment of the present invention may be any product or component having a display function, such as a notebook computer display screen, a liquid crystal display, a liquid crystal television, a digital photo frame, a mobile phone, a tablet computer, and the like.

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Abstract

一种阵列基板的制作方法、阵列基板及显示装置。阵列基板的制作方法包括：在衬底基板（1）上方形成第一导电薄膜（100）；对第一导电薄膜（100）进行图案化处理，在衬底基板（1）的第一区域（11）上方形成阴极（11）的图形，在衬底基板（1）的第二区域（12）上方形成栅极（4）的图形。通过一次构图工艺将发光二极管的阴极层与薄膜晶体管的栅极层同时形成在衬底基板的不同区域，能够减少阵列基板制作工艺的复杂度和工艺时间，简化有机电致发光面板的制作工序，降低制作成本。

Description

阵列基板的制作方法、阵列基板及显示装置 技术领域
本发明的实施例涉及一种阵列基板的制作方法、阵列基板及显示装置。
背景技术
有机电致发光显示面板因其具有自发光、全固态、宽视角、响应快等诸多优点而被认为在平板显示中有着巨大的应用前景，是继液晶(LCD)、等离子(PDP)显示装置之后的新一代平板显示产品。
传统的有机电致发光显示面板主要包括有机发光二极管(EL部分)和驱动薄膜晶体管两部分，参见图1，驱动薄膜晶体管主要包括形成在衬底基板1’上的有源层2’、栅极绝缘层3’、栅极4’、中间绝缘层5’、源漏极6’和平坦层7’，EL部分主要包括位于平坦层7’上的阳极层8’、像素定义层(PDL)9’、阴极层11’以及阳极层8’与阴极层11’之间的有机发光层10’。在有机电致发光显示装置的制作过程中，上述两部分分别需要不同的制作工艺形成，其制作EL部分的有机发光二极管工艺需要在驱动薄膜晶体管工艺完成后进行，且两者的制作工艺也都较为复杂，从而造成了有机电致发光显示面板的制作工艺步骤多、时间长，成本高的问题。
发明内容
根据本发明的一个实施例提供一种阵列基板的制作方法，包括：
在衬底基板上方形成第一导电薄膜；以及
对所述第一导电薄膜进行图案化处理，在所述衬底基板的第一区域上方形成阴极的图形，在所述衬底基板的第二区域上方形成栅极的图形。
根据本发明的另一个实施例提供一种阵列基板，包括在衬底基板上呈矩阵排布的多个像素单元，每个像素单元包括薄膜晶体管结构、阴极、阳极以及所述阴极与所述阳极之间的有机发光层，其中，所述阴极形成在所述衬底基板的第一区域上方，所述薄膜晶体管结构的栅极形成在所述衬底基板的第二区域上方，所述阴极与所述薄膜晶体管结构的栅极为相同材料且在一次构 图工艺中形成。
根据本发明的再一个实施例提供一种显示装置，包括如上所述的阵列基板。
附图说明
为了更清楚地说明本发明实施例的技术方案，下面将对实施例的附图作简单地介绍，显而易见地，下面描述中的附图仅仅涉及本发明的一些实施例，而非对本发明的限制。
图1是现有技术中的有机电致发光面板的结构示意图；
图2是本发明实施例提供的一种阵列基板的制作方法的流程图；
图3是本发明实施例提供的另一种阵列基板的制作方法的流程图；
图4-12是本发明实施例提供的制作阵列基板的示意图。
具体实施方式
为使本发明实施例的目的、技术方案和优点更加清楚，下面将结合本发明实施例的附图，对本发明实施例的技术方案进行清楚、完整地描述。显然，所描述的实施例是本发明的一部分实施例，而不是全部的实施例。基于所描述的本发明的实施例，本领域普通技术人员在无需创造性劳动的前提下所获得的所有其他实施例，都属于本发明保护的范围。
图2是本发明实施例提供的一种阵列基板的制作方法的流程图，该阵列基板的制作方法包括：
S11：在衬底基板上方形成第一导电薄膜；
S12：对所述第一导电薄膜进行图案化处理，在所述衬底基板的第一区域上方形成阴极的图形，在所述衬底基板的第二区域上方形成栅极的图形。
上述衬底基板的第一区域用于制作有机电致发光面板中的发光二极管(EL部分)，第二区域用于制作有机电致发光面板中的薄膜晶体管部分。
本发明实施例提供的阵列基板的制作方法，通过一次构图工艺将发光二极管的阴极层与薄膜晶体管的栅极层同时形成在衬底基板的不同区域，能够减少阵列基板制作工艺的复杂度和工艺时间，简化有机电致发光面板的制作工序，降低制作成本。
图3是本发明实施例提供的一种有机电致发光面板中阵列基板的制作方法的流程图，该制作方法包括：
S21：在所述衬底基板的第二区域上方形成有源层的图形、栅极绝缘层的图形；参见图4和图5，衬底基板1可为预先清洗的玻璃等透明基板，形成在第二区域12的有源层2可为非晶硅层通过准分子激光晶化、金属诱导晶化、固相晶化等方法将非晶硅层转变而成的多晶硅层。需要说明的是，采用不同的晶化方法，其具体的工艺过程及薄膜晶体管的结构会有所不同，在制备过程中需要根据情况增加热处理脱氢、沉积诱导金属、热处理晶化、准分子激光照射晶化、源漏区的掺杂(P型或者N型掺杂)及掺杂杂质的激活等工艺，但本发明同样会起到有益的效果。例如，有源层2的厚度为
Figure PCTCN2015074109-appb-000001
Figure PCTCN2015074109-appb-000002
在一个示例中，该厚度为
Figure PCTCN2015074109-appb-000003
例如，该有源层2的形成方法可以为PECVD、LPCVD或者溅射方法，沉积温度在600℃以下。栅极绝缘层3可采用单层的氧化硅、氮化硅或者二者的叠层，可使用采用PECVD(等离子体增强化学气相沉积)、LPCVD(低压化学气相沉积)、APCVD(大气压化学气相沉积)或ECR-CVD(电子回旋谐振化学气相沉积)等方法沉积，厚度为
Figure PCTCN2015074109-appb-000004
可根据具体的设计需要选择合适的厚度，例如，厚度为
Figure PCTCN2015074109-appb-000005
S22：在衬底基板上方形成第一导电薄膜，参见图6，第一导电薄膜100可为单层、两层或两层以上结构，由透明导电材料如氧化铟锡、氧化铟锌等构成，或金属、金属合金如银或银合金和形成在金属上层的透明导电材料构成，厚度可在
Figure PCTCN2015074109-appb-000006
范围内，例如，厚度为
Figure PCTCN2015074109-appb-000007
用以形成有机发光二极管的阴极层和薄膜晶体管的栅极层；
S23：对所述第一导电薄膜进行图案化处理，参见图7，在所述衬底基板的第一区域上方形成阴极11的图形，在所述衬底基板的第二区域上方形成栅极4的图形；
S24：形成绝缘层薄膜，参见图8，绝缘层薄膜200可以为有机材料，可选用聚酰亚胺、亚克力等有机光阻材料，厚度可在
Figure PCTCN2015074109-appb-000008
S25：对所述绝缘层薄膜以及所述栅极绝缘层图案化处理，在所述衬底基板的第一区域上方形成像素定义层的图形，在所述有源层的源漏区域上方形成过孔。例如，参见图9，对绝缘层薄膜200进行刻蚀，在第一区域11中 阴极层11的上方形成通孔210，形成像素定义层9，在有源层的源漏区域上方形成源漏极过孔220，从而使该图案化后的绝缘层薄膜即可以作为像素定义层，还可以作为平坦层和中间绝缘层；
S26：在所述衬底基板的第一区域上方形成有机发光层的图形，例如，参见图10，在通孔210的区域中形成有机发光层10；
S27：形成第二导电薄膜，参见图11，第二导电薄膜300也可为单层、两层或两层以上结构，通过过孔220与所述有源层2相接触，第二导电薄膜可由透明导电材料如氧化铟锡、氧化铟锌等构成，或金属、金属合金如银或银合金和形成在金属上层的透明导电材料构成，厚度可在
Figure PCTCN2015074109-appb-000009
范围内，在一个示例中，厚度为
Figure PCTCN2015074109-appb-000010
用以形成有机发光材料的阳极层以及薄膜晶体管的源漏极；
S28：对所述第二导电薄膜进行图案化处理，参见图12，在所述衬底基板的第一区域11上方形成阳极8的图形，在所述衬底基板的第二区域12上方源漏极6的图形，包括源极的图形以及与阳极8相连的漏极的图形。本发明的实施例中，第一导电薄膜和第二导电薄膜中需至少之一采用透明材料，以使EL部分发出的光可以照射出来，例如，所述第一导电薄膜可采用具有反光特性的金属材料，所述第二导电薄膜可采用透明金属材料。
本发明实施例提供的阵列基板的制作方法，通过第一次构图工艺同时形成有机发光二极管的阴极层与薄膜晶体管的栅极层，通过第二次构图工艺对绝缘层薄膜进行图案化处理，该图案化后的绝缘层薄膜即可以作为像素定义层，还可以作为平坦层和中间绝缘层，通过第三次构图工艺同时形成有机发光二极管的阳极层与薄膜晶体管的源漏极，相比现有技术中的有机电致发光面板的制作方法，能够大大减少阵列基板制作工艺的复杂度和工艺时间，简化有机电致发光面板的制作工序，降低制作成本。
此外，本发明实施例还提供了一种阵列基板，包括在衬底基板上呈矩阵排布的多个像素单元，每个像素单元包括薄膜晶体管结构、阴极、阳极以及所述阴极与所述阳极之间的有机发光层。所述阴极形成在所述衬底基板的第一区域上方，所述薄膜晶体管结构的栅极形成在所述衬底基板的第二区域上方，所述阴极与所述薄膜晶体管结构的栅极为相同材料且在一次构图工艺中形成。
例如，在上述阵列基板中，所述薄膜晶体管结构的有源层、栅极绝缘层形成在所述栅极的下方，每个像素单元还包括形成在所述阴极上方的像素定义层以及形成在所述栅极上方的平坦层，所述像素定义层与所述平坦层为相同材料且在一次构图工艺中形成。例如，所述像素定义层和所述平坦层位于同一层。
例如，在上述阵列基板中，所述有机发光层形成在所述阴极的上方，所述阳极形成在所述有机发光层的上方，所述薄膜晶体管结构的源极和漏极形成在所述平坦层的上方，所述阳极、所述源极和所述漏极为相同材料且在一次构图工艺中形成。例如，所述阳极、所述源极和所述漏极位于同一层。
根据本发明的实施例，第一导电薄膜和第二导电薄膜可以为由金属材料形成的金属薄膜，也可以由透明导电材料如透明金属氧化物形成，或者由金属材料和透明金属氧化物材料的叠层形成。在本发明的实施例中，为了EL部分的出光，第一导电薄膜和第二导电薄膜的至少之一为透明材料；在一个示例中，所述第一导电薄膜的材料为具有反光特性的材料，所述第二导电薄膜的材料为透明导电材料。
此外，本发明实施例还提供了一种显示装置，包括上述的阵列基板。本发明实施例提供的显示装置可以是笔记本电脑显示屏、液晶显示器、液晶电视、数码相框、手机、平板电脑等任何具有显示功能的产品或部件。
以上所述仅是本发明的示范性实施方式，而非用于限制本发明的保护范围，本发明的保护范围由所附的权利要求确定。
本申请要求于2014年10月31日递交的中国专利申请第201410602733.2号的优先权，在此全文引用上述中国专利申请公开的内容以作为本申请的一部分。

Claims (15)

  1. 一种阵列基板的制作方法，包括：
    在衬底基板上方形成第一导电薄膜；以及
    对所述第一导电薄膜进行图案化处理，在所述衬底基板的第一区域上方形成阴极的图形，在所述衬底基板的第二区域上方形成栅极的图形。
  2. 根据权利要求1所述的阵列基板的制作方法，还包括：在所述在衬底基板上方形成第一导电薄膜之前，
    在所述衬底基板的第二区域上方形成有源层的图形、栅极绝缘层的图形。
  3. 根据权利要求2所述的阵列基板的制作方法，还包括：在对所述第一导电薄膜进行图案化处理，在所述衬底基板的第一区域上方形成阴极的图形，在所述衬底基板的第二区域上方形成栅极的图形之后，
    形成绝缘层薄膜；以及
    对所述绝缘层薄膜以及所述栅极绝缘层图案化处理，在所述衬底基板的第一区域上方形成像素定义层的图形，在所述有源层的源漏区域上方形成过孔。
  4. 根据权利要求3所述的阵列基板的制作方法，其中，所述绝缘层薄膜的厚度为
    Figure PCTCN2015074109-appb-100001
  5. 根据权利要求3所述的阵列基板的制作方法，还包括：在所述对所述绝缘层薄膜以及所述栅极绝缘层图案化处理，在所述衬底基板的第一区域上方形成像素定义层的图形，在所述有源层的源漏区域上方形成过孔之后，
    在所述衬底基板的第一区域上方形成有机发光层的图形；
    形成第二导电薄膜，所述第二导电薄膜通过所述过孔与所述有源层相接触；以及
    对所述第二导电薄膜进行图案化处理，在所述衬底基板的第一区域上方形成阳极的图形，在所述衬底基板的第二区域上方形成源极的图形以及与所述阳极相连的漏极的图形。
  6. 根据权利要求5所述的阵列基板的制作方法，其中，所述第二导电薄膜的厚度为
    Figure PCTCN2015074109-appb-100002
  7. 根据权利要求5所述的阵列基板的制作方法，其中，所述第一导电薄 膜和所述第二导电薄膜的至少之一为透明导电材料。
  8. 根据权利要求7所述的阵列基板的制作方法，其中，所述第一导电薄膜的材料为具有反光特性的材料，所述第二导电薄膜的材料为透明导电材料。
  9. 根据权利要求1-8任一所述的阵列基板的制作方法，其中，所述第一导电薄膜的厚度为
    Figure PCTCN2015074109-appb-100003
  10. 一种阵列基板，包括在衬底基板上呈矩阵排布的多个像素单元，每个像素单元包括薄膜晶体管结构、阴极、阳极以及所述阴极与所述阳极之间的有机发光层，其中，所述阴极形成在所述衬底基板的第一区域上方，所述薄膜晶体管结构的栅极形成在所述衬底基板的第二区域上方，所述阴极与所述薄膜晶体管结构的栅极为相同材料且在一次构图工艺中形成。
  11. 根据权利要求10所述的阵列基板，其中，所述阴极与所述薄膜晶体管结构的栅极位于同一层。
  12. 根据权利要求10或11所述的阵列基板，其中，所述薄膜晶体管结构的有源层、栅极绝缘层形成在所述栅极的下方，每个像素单元还包括形成在所述阴极上方的像素定义层以及形成在所述栅极上方的平坦层，所述像素定义层与所述平坦层为相同材料且在一次构图工艺中形成。
  13. 根据权利要求12所述的阵列基板，其中，所述像素定义层与所述平坦层位于同一层。
  14. 根据权利要求10-13任一所述的阵列基板，其特征在于，所述有机发光层形成在所述阴极的上方，所述阳极形成在所述有机发光层的上方，所述薄膜晶体管结构的源极和漏极形成在所述平坦层的上方，所述阳极、所述源极和所述漏极为相同材料且在一次构图工艺中形成。
  15. 一种显示装置，包括如权利要求10-14任一所述的阵列基板。
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