WO2016058151A1 - 一种准分子激光退火装置及该装置的使用方法 - Google Patents

一种准分子激光退火装置及该装置的使用方法 Download PDF

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Publication number
WO2016058151A1
WO2016058151A1 PCT/CN2014/088697 CN2014088697W WO2016058151A1 WO 2016058151 A1 WO2016058151 A1 WO 2016058151A1 CN 2014088697 W CN2014088697 W CN 2014088697W WO 2016058151 A1 WO2016058151 A1 WO 2016058151A1
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excimer laser
amorphous silicon
silicon film
annealing
substrate
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French (fr)
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姚江波
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/352—Working by laser beam, e.g. welding, cutting or boring for surface treatment
    • B23K26/354—Working by laser beam, e.g. welding, cutting or boring for surface treatment by melting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof

Definitions

  • the present invention relates to the field of liquid crystal display technologies, and in particular, to an excimer laser annealing apparatus and a method of using the same.
  • the formation of polysilicon has also become a major research direction.
  • the excimer laser annealing process is an important step in the formation of polycrystalline silicon.
  • amorphous silicon is completely melted after being subjected to high temperature, and then recrystallized to form polycrystalline silicon.
  • recrystallization it will crystallize in a high energy direction in accordance with low energy, that is, crystallization in a high temperature direction at a low temperature.
  • the excimer laser beam is uniformly irradiated onto the amorphous silicon thin film layer so that the temperatures of the portions of the amorphous silicon thin film layer are substantially equal, the starting point and direction at the time of recrystallization cannot be controlled, resulting in a small crystal grain of the polycrystalline silicon after crystallization. There are many intergranular grain boundaries, which seriously affect the electron mobility of polysilicon, thus affecting the display effect of the display.
  • An object of the present invention is to provide an excimer laser annealing apparatus and a method of using the same, which solves the technical problem that the crystal grains of the polycrystalline silicon after the crystallization of the prior art are small and the intergranular grain boundaries are excessive.
  • the present invention constructs a method of annealing using the excimer laser annealing apparatus, the excimer laser annealing apparatus comprising:
  • Substrate stage including:
  • a temperature adjustment module for adjusting a temperature of the bearing surface to control a crystal orientation of the amorphous silicon in the amorphous silicon film, wherein the temperature adjustment module is at least two disposed on the bearing surface a light absorbing portion and at least two light reflecting portions, the light absorbing portion and the light reflecting portion being embedded in the substrate stage;
  • An excimer laser for providing an excimer laser beam that is irradiated to the substrate
  • the method of annealing using the excimer laser annealing device comprises:
  • the amorphous silicon film is annealed by using the excimer laser, so that the amorphous silicon in the amorphous silicon film is crystallized in a predetermined region according to the temperature adjustment direction of the temperature adjustment module to form a polysilicon film.
  • the preset area is a region on the amorphous silicon film corresponding to a position of the temperature adjustment module.
  • a temperature is formed in the first portion and the second portion of the amorphous silicon film a gradient, wherein the first portion is a region on the amorphous silicon film corresponding to a reflective portion of the substrate stage, and the second portion is light absorption on the amorphous silicon film and the substrate carrier Part of the corresponding area.
  • the step of forming a temperature gradient in the first portion and the second portion of the amorphous silicon film is specifically: the first portion of the amorphous silicon film A portion absorbs the energy of the irradiated excimer laser beam and the energy of the excimer laser beam reflected by the reflective portion, and the second portion of the amorphous silicon film absorbs the energy of the irradiated excimer laser beam.
  • the temperature adjustment direction of the temperature adjustment module is: a direction along the second portion toward the first portion.
  • the light absorbing portion and the light reflecting portion are alternately distributed on the substrate stage.
  • the present invention constructs an excimer laser annealing apparatus, the apparatus comprising:
  • Substrate stage including:
  • a temperature adjustment module for adjusting a temperature on the bearing surface to control a crystal orientation of amorphous silicon in the amorphous silicon film
  • An excimer laser for providing an excimer laser beam that is incident on the substrate.
  • the temperature adjustment module is a light absorbing portion and a light reflecting portion provided on the bearing surface.
  • the light absorbing portion and the light reflecting portion are embedded in the substrate stage.
  • Another object of the present invention is to provide a method of annealing using the excimer laser annealing apparatus, the excimer laser annealing apparatus comprising:
  • Substrate stage including:
  • a temperature adjustment module for adjusting a temperature on the bearing surface to control a crystal orientation of amorphous silicon in the amorphous silicon film
  • An excimer laser for providing an excimer laser beam that is irradiated to the substrate
  • the method of annealing using the excimer laser annealing device comprises:
  • the amorphous silicon film is annealed by using the excimer laser, so that the amorphous silicon in the amorphous silicon film is crystallized in a predetermined region according to the temperature adjustment direction of the temperature adjustment module to form a polysilicon film.
  • the preset area is a region on the amorphous silicon film corresponding to a position of the temperature adjustment module.
  • the temperature adjustment module is a light absorbing portion and a light reflecting portion provided on the bearing surface.
  • a temperature is formed in the first portion and the second portion of the amorphous silicon film a gradient, wherein the first portion is a region on the amorphous silicon film corresponding to a reflective portion of the substrate stage, and the second portion is light absorption on the amorphous silicon film and the substrate carrier Part of the corresponding area.
  • the step of forming a temperature gradient in the first portion and the second portion of the amorphous silicon film is specifically: the first portion of the amorphous silicon film A portion absorbs the energy of the irradiated excimer laser beam and the energy of the excimer laser beam reflected by the reflective portion, and the second portion of the amorphous silicon film absorbs the energy of the irradiated excimer laser beam.
  • the temperature adjustment direction of the temperature adjustment module is: a direction along the second portion toward the first portion.
  • the light absorbing portion and the light reflecting portion are embedded in the substrate stage.
  • the substrate stage is provided with at least two light absorbing portions and at least two light reflecting portions; the light absorbing portion and the light reflecting portion are alternately distributed On the substrate stage.
  • the excimer laser annealing device of the invention and the method of using the device form a region having a temperature gradient by adding a temperature adjusting module on the substrate stage, thereby controlling amorphous silicon to recrystallize in a certain direction to form a larger
  • the grain of polysilicon improves the effect of the liquid crystal display.
  • FIG. 1 is a schematic structural view of an excimer laser annealing apparatus according to a first embodiment of the present invention
  • FIG. 2 is a schematic structural view of an excimer laser annealing apparatus according to a second embodiment of the present invention.
  • FIG 3 is a schematic structural view showing a cross section of a substrate stage according to a second embodiment of the present invention.
  • FIG. 4 is a flow chart of a method for annealing using the excimer laser annealing apparatus of FIG. 2 of the present invention.
  • FIG. 1 is a schematic structural view of an excimer laser annealing apparatus according to a first embodiment of the present invention.
  • the excimer laser annealing apparatus of the present invention includes a substrate stage 10 and an excimer laser 20, the substrate stage 10 includes a bearing surface 15 and a temperature adjustment module 14, the bearing surface 15
  • the substrate 11 is carried thereon, an amorphous silicon film 13 is formed on the substrate 11, and a buffer layer 12 may be disposed between the substrate 11 and the amorphous silicon film 13.
  • the excimer laser 20 provides an excimer laser beam that is irradiated onto the substrate 11.
  • the temperature adjustment module 14 is configured to adjust the temperature on the bearing surface 15 so as to have regions of different temperatures on the amorphous silicon film, thereby controlling the crystal orientation of the amorphous silicon in the amorphous silicon film 13.
  • the amorphous silicon film 13 is annealed using the excimer laser 20 such that the amorphous silicon in the amorphous silicon film 13 is adjusted in the predetermined region 16 according to the temperature adjustment direction of the temperature adjustment module 14.
  • the polycrystalline silicon film is formed by crystallization, wherein the predetermined region 16 is located on the amorphous silicon film and corresponds to a position of the temperature adjustment module 14.
  • the substrate 11 is irradiated by an excimer laser beam generated by the excimer laser 20, which absorbs energy of an irradiated excimer laser beam and melts, and the excimer laser beam can penetrate
  • the substrate 11 is irradiated onto the substrate stage 10.
  • the temperature adjustment module 14 can be a light absorbing portion and a light reflecting portion disposed on the bearing surface 15.
  • the predetermined area 16 includes a first portion corresponding to the position of the light reflecting portion and a second portion corresponding to the position of the light absorbing portion.
  • the amorphous silicon film 13 absorbs the energy of the excimer laser beam directly irradiated by the excimer laser 20, and at the same time the quasi-molecular laser 20 A molecular laser beam is irradiated through the substrate 11 onto the carrying surface 15 such that the reflective portion reflects a majority of the excimer laser beam impinging thereon back onto the first portion. And the light absorbing portion cannot be reflected onto the amorphous silicon film due to absorption of the excimer laser beam irradiated thereon.
  • the first portion of the amorphous silicon film 13 absorbs the energy of the irradiated excimer laser beam and the energy of the excimer laser beam reflected by the reflective portion. While the second portion of the amorphous silicon film 13 absorbs only the energy of the irradiated excimer laser beam, the energy or temperature of the second portion is higher than the energy or temperature of the first portion.
  • a high-low temperature gradient is formed in the predetermined region 16 of the amorphous silicon film 13, so that the amorphous silicon in the amorphous silicon film 13 faces the first portion along the second portion.
  • the direction is recrystallized.
  • the excimer laser annealing device of the present invention forms a region having a temperature gradient by adding a temperature adjustment module on the substrate stage, thereby controlling amorphous silicon to recrystallize in a certain direction to form polycrystalline silicon having a larger crystal grain, thereby improving The effect of the liquid crystal display.
  • FIG. 2 is a schematic structural view of an excimer laser annealing apparatus according to a second embodiment of the present invention.
  • the excimer laser annealing apparatus includes a substrate stage 10 and an excimer laser 20, and the substrate stage 10 includes a bearing surface 15 and a temperature adjustment module 14.
  • the carrier surface 15 carries a substrate 11 on which an amorphous silicon film 13 is formed, and the substrate 11 may be a glass substrate; between the substrate 11 and the amorphous silicon film 13
  • a buffer layer 12 may be disposed for isolating impurities on the substrate 11 from impurities into the amorphous silicon film 13, the buffer layer 12 having a thickness of 50-600 nm, preferably the buffer The thickness of the layer 12 is 200-400 nm, and the material of the buffer layer 12 is silicon oxide.
  • the excimer laser 20 provides an excimer laser beam that is irradiated onto the substrate 11, and the excimer laser beam 20 may be scanned and irradiated on the substrate 11.
  • the temperature adjustment module 14 is a light absorbing portion 101 and a light reflecting portion 102 disposed on the bearing surface 15.
  • FIG. 3 is a schematic structural view of a cross section of a substrate stage of the embodiment. At least two light absorbing portions 101 and at least two light reflecting portions 102 are disposed on the substrate stage 10; the light absorbing portion 101 and the light reflecting portion 102 are alternately distributed on the substrate stage 10.
  • the light absorbing portion 101 and the light reflecting portion 102 are embedded in the substrate stage 10, for example, by forming a plurality of holes on the side of the substrate stage 10 on the bearing surface 15, and coating a reflective material in some holes to form A plurality of the light reflecting portions 102 are coated with a light absorbing material in other holes to form a plurality of the light absorbing portions 101, and the light reflecting material is a mirror material.
  • the shape of the light absorbing portion 101 and the light reflecting portion 102 may be a square, a triangle, a circle, or the like, and the spacing between the light absorbing portion and the light reflecting portion may be adjusted according to actual needs.
  • the excimer laser annealing device of the present invention forms a region having a temperature gradient by adding a temperature adjustment module on the substrate stage, thereby controlling amorphous silicon to recrystallize in a certain direction to form polycrystalline silicon having a larger crystal grain, thereby improving The effect of the liquid crystal display.
  • FIG. 4 is a flow chart of a method for annealing using the excimer laser annealing apparatus of FIG. 2 of the present invention.
  • the method of annealing using the excimer laser annealing apparatus of FIG. 2 includes:
  • the predetermined region 16 is located on the amorphous silicon film 13 and corresponds to a position of the temperature adjustment module 14.
  • the step of annealing the amorphous silicon film 13 includes:
  • the substrate 11 is irradiated by an excimer laser beam generated by the excimer laser 20, which absorbs and melts the energy of the irradiated excimer laser beam, and the excimer laser beam can
  • the substrate 11 is irradiated onto the substrate stage 10 by irradiation.
  • the temperature adjustment module 14 is a light absorbing portion 101 and a light reflecting portion 102 disposed on the bearing surface 15.
  • the predetermined area 16 includes a first portion 132 corresponding to a position of the light reflecting portion 102 and a second portion 131 corresponding to a position of the light absorbing portion 101.
  • the energy of the excimer laser beam directly irradiated by the excimer laser 20 is absorbed by the amorphous silicon film 13 while the excimer laser 20 is An excimer laser beam is irradiated through the substrate 11 onto the carrier surface 15 such that the light reflecting portion 102 reflects a majority of the excimer laser beam irradiated thereon back onto the first portion 132.
  • the light absorbing portion 101 cannot be reflected onto the amorphous silicon film 13 by absorbing the excimer laser beam irradiated thereon.
  • the first portion 132 of the amorphous silicon film 13 absorbs the energy of the irradiated excimer laser beam and the energy of the excimer laser beam reflected by the light reflecting portion 102. While the second portion 131 of the amorphous silicon film 13 absorbs only the energy of the irradiated excimer laser beam, the energy or temperature of the second portion 131 is made higher than the energy or temperature of the first portion 132.
  • a high-low temperature gradient is formed in the predetermined region 16 of the amorphous silicon film 13, so that the amorphous silicon in the amorphous silicon film 13 faces the first portion along the second portion.
  • the direction is recrystallized.
  • the method for annealing in the excimer laser annealing apparatus of the present invention forms a region having a temperature gradient by adding a temperature adjustment module on a substrate stage, thereby controlling amorphous silicon to recrystallize in a certain direction to form a comparison Large grain polysilicon improves the effect of liquid crystal displays.

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Abstract

一种准分子激光退火装置及该装置的使用方法，所述装置包括基板载台（10）和准分子激光器（20），所述基板载台（10）包括用于承载具有非晶硅薄膜（13）的基板（11）的承载面（15）以及温度调节模块（14），所述温度调节模块（14）用于调节所述承载面（15）上的温度，以控制所述非晶硅薄膜（13）中的非晶硅的结晶方向。通过增加温度调节模块（14），控制非晶硅重结晶的方向。

Description

一种准分子激光退火装置及该装置的使用方法 技术领域
本发明涉及液晶显示器技术领域，特别是涉及一种准分子激光退火装置及该装置的使用方法。
 背景技术
随着多晶硅元器件的广泛应用，多晶硅的形成方法也成为主要的研究方向。其中准分子激光退火制程是形成多晶硅的重要步骤，在传统的准分子激光退火制程中，非晶硅受到高温后变成完全熔融的状态，之后重结晶形成多晶硅。重结晶时会按照低能量向高能量方向结晶，即低温向高温方向结晶。由于目前准分子激光束均匀地照射到非晶硅薄膜层上，使得非晶硅薄膜层各部分温度大致相等，所以重结晶时的起点和方向无法控制，导致结晶后多晶硅的晶粒偏小，晶粒间晶界偏多，严重影响多晶硅的电子迁移率，从而影响显示器的显示效果。
因此，有必要提供一种准分子激光退火装置及该装置的使用方法，以解决现有技术所存在的问题。
 技术问题
本发明的目的在于提供一种准分子激光退火装置及该装置的使用方法，以解决现有技术的结晶后多晶硅的晶粒偏小，晶粒间晶界偏多的技术问题。
 技术解决方案
为解决上述技术问题，本发明构造了一种使用所述准分子激光退火装置进行退火的方法，所述准分子激光退火装置包括：
基板载台，包括：
承载面，用于承载具有非晶硅薄膜的基板；以及
温度调节模块，用于调节所述承载面上的温度，以控制所述非晶硅薄膜中的非晶硅的结晶方向，其中所述温度调节模块为设置在所述承载面上的至少两个吸光部分和至少两个反光部分，所述吸光部分和所述反光部分嵌入所述基板载台内；以及
准分子激光器，用于提供照射到所述基板的准分子激光束；
其中，使用所述准分子激光退火装置进行退火的方法包括：
将所述具有非晶硅薄膜的基板放置于所述基板载台上；以及
使用所述准分子激光器对所述非晶硅薄膜进行退火处理，以使所述非晶硅薄膜中的非晶硅在预设区域内按照所述温度调节模块的温度调节方向结晶形成多晶硅薄膜，其中所述预设区域为与所述温度调节模块的位置相对应的所述非晶硅薄膜上的区域。
在本发明的使用所述准分子激光退火装置进行退火的方法中，在所述对所述非晶硅薄膜进行退火处理过程中，在所述非晶硅薄膜的第一部分和第二部分形成温度梯度，其中所述第一部分为所述非晶硅薄膜上与所述基板载台的反光部分所对应的区域，所述第二部分为所述非晶硅薄膜上与所述基板载台的吸光部分所对应的区域。
在本发明的使用所述准分子激光退火装置进行退火的方法中，所述在所述非晶硅薄膜的第一部分和第二部分形成温度梯度的步骤具体为：所述非晶硅薄膜的第一部分吸收照射的准分子激光束的能量以及所述反光部分反射的准分子激光束的能量，所述非晶硅薄膜的第二部分吸收照射的准分子激光束的能量。
在本发明的使用所述准分子激光退火装置进行退火的方法中，所述温度调节模块的温度调节方向为：沿所述第二部分朝向所述第一部分的方向。
在本发明的使用所述准分子激光退火装置进行退火的方法中，所述吸光部分和所述反光部分交错分布在所述基板载台上。
本发明构造了一种准分子激光退火装置，所述装置包括：
基板载台，包括：
承载面，用于承载具有非晶硅薄膜的基板；以及
温度调节模块，用于调节所述承载面上的温度，以控制所述非晶硅薄膜中的非晶硅的结晶方向；以及
准分子激光器，用于提供照射到所述基板的准分子激光束。
在本发明的准分子激光退火装置中，所述温度调节模块为设置在所述承载面上的吸光部分和反光部分。
在本发明的准分子激光退火装置中，所述吸光部分和所述反光部分嵌入所述基板载台内。
本发明的另一个目的在于提供一种使用所述准分子激光退火装置进行退火的方法，所述准分子激光退火装置包括：
基板载台，包括：
承载面，用于承载具有非晶硅薄膜的基板；以及
温度调节模块，用于调节所述承载面上的温度，以控制所述非晶硅薄膜中的非晶硅的结晶方向；以及
准分子激光器，用于提供照射到所述基板的准分子激光束；
其中，使用所述准分子激光退火装置进行退火的方法包括：
将所述具有非晶硅薄膜的基板放置于所述基板载台上；以及
使用所述准分子激光器对所述非晶硅薄膜进行退火处理，以使所述非晶硅薄膜中的非晶硅在预设区域内按照所述温度调节模块的温度调节方向结晶形成多晶硅薄膜，其中所述预设区域为与所述温度调节模块的位置相对应的所述非晶硅薄膜上的区域。
在本发明的使用所述准分子激光退火装置进行退火的方法中，所述温度调节模块为设置在所述承载面上的吸光部分和反光部分。
在本发明的使用所述准分子激光退火装置进行退火的方法中，在所述对所述非晶硅薄膜进行退火处理过程中，在所述非晶硅薄膜的第一部分和第二部分形成温度梯度，其中所述第一部分为所述非晶硅薄膜上与所述基板载台的反光部分所对应的区域，所述第二部分为所述非晶硅薄膜上与所述基板载台的吸光部分所对应的区域。
在本发明的使用所述准分子激光退火装置进行退火的方法中，所述在所述非晶硅薄膜的第一部分和第二部分形成温度梯度的步骤具体为：所述非晶硅薄膜的第一部分吸收照射的准分子激光束的能量以及所述反光部分反射的准分子激光束的能量，所述非晶硅薄膜的第二部分吸收照射的准分子激光束的能量。
在本发明的使用所述准分子激光退火装置进行退火的方法中，所述温度调节模块的温度调节方向为：沿所述第二部分朝向所述第一部分的方向。
在本发明的使用所述准分子激光退火装置进行退火的方法中，所述吸光部分和所述反光部分嵌入所述基板载台内。
在本发明的使用所述准分子激光退火装置进行退火的方法中，所述基板载台上设置有至少两个吸光部分和至少两个反光部分；所述吸光部分和所述反光部分交错分布在所述基板载台上。
 有益效果
本发明的准分子激光退火装置及该装置的使用方法，通过在基板载台上增加温度调节模块，形成了具有温度梯度的区域，从而控制非晶硅沿一定的方向重结晶，以形成较大晶粒的多晶硅，提高了液晶显示器的效果。
 附图说明
图1为本发明第一实施例的准分子激光退火装置的结构示意图；
图2为本发明第二实施例的准分子激光退火装置的结构示意图；
图3为本发明第二实施例的基板载台的横截面的结构示意图。
图4为本发明使用图2中的准分子激光退火装置进行退火的方法流程图。
 本发明的最佳实施方式
以下各实施例的说明是参考附加的图式，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如「上」、「下」、「前」、「后」、「左」、「右」、「内」、「外」、「侧面」等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是以相同标号表示。
请参照图1，图1为本发明第一实施例的准分子激光退火装置的结构示意图。
本发明的准分子激光退火装置，如图1所示，其包括基板载台10、及准分子激光器20，所述基板载台10包括承载面15、以及温度调节模块14，所述承载面15上承载有所述基板11，所述基板11上形成有非晶硅薄膜13，在所述基板11和所述非晶硅薄膜13之间还可设置有缓冲层12。所述准分子激光器20提供照射到所述基板11的准分子激光束。所述温度调节模块14，用于调节所述承载面15上的温度，使得在非晶硅薄膜上具有温度不同的区域，进而控制所述非晶硅薄膜13中的非晶硅的结晶方向。
上述准分子激光退火装置的工作原理为：
将所述具有非晶硅薄膜的基板11放置于所述基板载台10上；
使用所述准分子激光器20对所述非晶硅薄膜13进行退火处理，以使所述非晶硅薄膜13中的非晶硅在预设区域16内按照所述温度调节模块14的温度调节方向结晶形成多晶硅薄膜，其中所述预设区域16位于所述非晶硅薄膜上，且与所述温度调节模块14的位置相对应的区域。
通过所述准分子激光器20产生的准分子激光束对所述基板11进行照射，所述非晶硅薄膜13吸收照射的准分子激光束的能量并熔融，且所述准分子激光束能够穿透所述基板11照射到所述基板载台10上。
所述温度调节模块14可为设置在所述承载面15上的吸光部分和反光部分。所述预设区域16包括第一部分和第二部分，所述第一部分与所述反光部分位置相对应、所述第二部分与所述吸光部分位置相对应。
在对所述非晶硅薄膜13进行退火处理过程中，由于所述非晶硅薄膜13的吸收所述准分子激光器20直接照射的准分子激光束的能量，同时所述准分子激光器20的准分子激光束穿透所述基板11照射到所述承载面15上，使得所述反光部分将照射在其上的大部分准分子激光束反射回所述第一部分上。而所述吸光部分由于将照射在其上的准分子激光束吸收掉，不能反射到所述非晶硅薄膜上。
因此所述非晶硅薄膜13的第一部分吸收照射的准分子激光束的能量以及所述反光部分反射的准分子激光束的能量。而所述非晶硅薄膜13的第二部分仅吸收照射的准分子激光束的能量，因此所述第二部分的能量或温度高于第一部分的能量或温度。
即在所述非晶硅薄膜13的预设区域16内形成一高一低的温度梯度，进而使得所述非晶硅薄膜13中的非晶硅沿所述第二部分朝向所述第一部分的方向重结晶。
本发明的准分子激光退火装置，通过在基板载台上增加温度调节模块，形成了具有温度梯度的区域，从而控制非晶硅沿一定的方向重结晶，以形成较大晶粒的多晶硅，提高了液晶显示器的效果。
请参照图2，图2为本发明第二实施例的准分子激光退火装置的结构示意图。
本发明的准分子激光退火装置，如图2所示，所述准分子激光退火装置包括基板载台10、及准分子激光器20，所述基板载台10包括承载面15、以及温度调节模块14，所述承载面15上承载有基板11，所述基板11上形成有非晶硅薄膜13，所述基板11可以为玻璃基板；在所述基板11和所述非晶硅薄膜13之间还可设置有缓冲层12，所述缓冲层12用于隔离所述基板11上的杂质，以免杂质进入所述非晶硅薄膜13，所述缓冲层12的厚度50-600nm，优选地所述缓冲层12的厚度200-400nm，所述缓冲层12的材料是氧化硅。所述准分子激光器20提供照射到所述基板11的准分子激光束，所述准分子激光束20可以是扫描照射在所述基板11上的。
优选地，所述温度调节模块14为设置在所述承载面15上的吸光部分101和反光部分102。结合图3，图3为本实施例的基板载台的横截面的结构示意图。在所述基板载台10上设置有至少两个吸光部分101和至少两个反光部分102；所述吸光部分101和所述反光部分102交错分布在所述基板载台10上。所述吸光部分101和所述反光部分102嵌入所述基板载台10内，譬如通过在所述基板载台10位于承载面15一侧开设多个孔，在一些孔中涂布反光材料以形成多个所述反光部分102，在另一些孔中涂布吸光材料以形成多个所述吸光部分101，所述反光材料为镜面材料。
所述吸光部分101和反光部分102的形状可为正方形、三角形、圆形等形状，所述吸光部分和反光部分的间距可根据实际需求调节。
本发明的准分子激光退火装置，通过在基板载台上增加温度调节模块，形成了具有温度梯度的区域，从而控制非晶硅沿一定的方向重结晶，以形成较大晶粒的多晶硅，提高了液晶显示器的效果。
图4为本发明使用图2中的准分子激光退火装置进行退火的方法流程图。
如图4所示，使用图2中的准分子激光退火装置进行退火的方法包括：
S201、将所述具有非晶硅薄膜的基板放置于所述基板载台上；
S202、使用所述准分子激光器对所述非晶硅薄膜进行退火处理，以使所述非晶硅薄膜中的非晶硅在预设区域内按照所述温度调节模块的温度调节方向结晶形成多晶硅薄膜；
所述预设区域16位于所述非晶硅薄膜13上，且与所述温度调节模块14的位置相对应的区域。
对所述非晶硅薄膜13进行退火处理的步骤包括；
结合图2，通过准分子激光器20产生的准分子激光束对所述基板11进行照射，所述非晶硅薄膜13吸收照射的准分子激光束的能量并熔融，且所述准分子激光束能够穿透所述基板11照射到所述基板载台10上。
所述温度调节模块14为设置在所述承载面15上的吸光部分101和反光部分102。所述预设区域16包括第一部分132和第二部分131，所述第一部分132与所述反光部分102位置相对应、所述第二部分131与所述吸光部分101位置相对应。
在所述对所述非晶硅薄膜进行退火处理过程中，由于所述非晶硅薄膜13的吸收所述准分子激光器20直接照射的准分子激光束的能量，同时所述准分子激光器20的准分子激光束穿透所述基板11照射到所述承载面15上，使得所述反光部分102将照射在其上的大部分准分子激光束反射回所述第一部分132上。而所述吸光部分101由于将照射在其上的准分子激光束吸收掉，不能反射到所述非晶硅薄膜13上。
因此所述非晶硅薄膜13的第一部分132吸收照射的准分子激光束的能量以及所述反光部分102反射的准分子激光束的能量。而所述非晶硅薄膜13的第二部分131仅吸收照射的准分子激光束的能量，因此使所述第二部分131的能量或温度高于所述第一部分132的能量或温度。
即在所述非晶硅薄膜13的预设区域16内形成一高一低的温度梯度，进而使得所述非晶硅薄膜13中的非晶硅沿所述第二部分朝向所述第一部分的方向重结晶。
本发明的使用所述准分子激光退火装置进行退火的方法，通过在基板载台上增加温度调节模块，形成了具有温度梯度的区域，从而控制非晶硅沿一定的方向重结晶，以形成较大晶粒的多晶硅，提高了液晶显示器的效果。
综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。

Claims (15)

  1. 一种使用所述准分子激光退火装置进行退火的方法，其中所述准分子激光退火装置包括：
    基板载台，包括：
    承载面，用于承载具有非晶硅薄膜的基板；以及
    温度调节模块，用于调节所述承载面上的温度，以控制所述非晶硅薄膜中的非晶硅的结晶方向，其中所述温度调节模块为设置在所述承载面上的至少两个吸光部分和至少两个反光部分，所述吸光部分和所述反光部分嵌入所述基板载台内；以及
    准分子激光器，用于提供照射到所述基板的准分子激光束；
    其中，使用所述准分子激光退火装置进行退火的方法包括：
    将所述具有非晶硅薄膜的基板放置于所述基板载台上；以及
    使用所述准分子激光器对所述非晶硅薄膜进行退火处理，以使所述非晶硅薄膜中的非晶硅在预设区域内按照所述温度调节模块的温度调节方向结晶形成多晶硅薄膜，其中所述预设区域为与所述温度调节模块的位置相对应的所述非晶硅薄膜上的区域。
  2. 根据权利要求书1所述的使用所述准分子激光退火装置进行退火的方法，其中在所述对所述非晶硅薄膜进行退火处理过程中，在所述非晶硅薄膜的第一部分和第二部分形成温度梯度，其中所述第一部分为所述非晶硅薄膜上与所述基板载台的反光部分所对应的区域，所述第二部分为所述非晶硅薄膜上与所述基板载台的吸光部分所对应的区域。
  3. 根据权利要求书2所述的使用所述准分子激光退火装置进行退火的方法，其中所述在所述非晶硅薄膜的第一部分和第二部分形成温度梯度的步骤具体为：所述非晶硅薄膜的第一部分吸收照射的准分子激光束的能量以及所述反光部分反射的准分子激光束的能量，所述非晶硅薄膜的第二部分吸收照射的准分子激光束的能量。
  4. 根据权利要求书2所述的使用所述准分子激光退火装置进行退火的方法，其中所述温度调节模块的温度调节方向为：沿所述第二部分朝向所述第一部分的方向。
  5. 根据权利要求书1所述的使用所述准分子激光退火装置进行退火的方法，其中所述吸光部分和所述反光部分交错分布在所述基板载台上。
  6. 一种准分子激光退火装置，其包括：
    基板载台，包括：
    承载面，用于承载具有非晶硅薄膜的基板；以及
    温度调节模块，用于调节所述承载面上的温度，以控制所述非晶硅薄膜中的非晶硅的结晶方向；以及
    准分子激光器，用于提供照射到所述基板的准分子激光束。
  7. 根据权利要求书6所述的准分子激光退火装置，其中所述温度调节模块为设置在所述承载面上的吸光部分和反光部分。
  8. 根据权利要求书7所述的准分子激光退火装置，其中所述吸光部分和所述反光部分嵌入所述基板载台内。
  9. 一种使用所述准分子激光退火装置进行退火的方法，其中所述准分子激光退火装置包括：
    基板载台，包括：
    承载面，用于承载具有非晶硅薄膜的基板；以及
    温度调节模块，用于调节所述承载面上的温度，以控制所述非晶硅薄膜中的非晶硅的结晶方向；以及
    准分子激光器，用于提供照射到所述基板的准分子激光束；
    其中，使用所述准分子激光退火装置进行退火的方法包括：
    将所述具有非晶硅薄膜的基板放置于所述基板载台上；以及
    使用所述准分子激光器对所述非晶硅薄膜进行退火处理，以使所述非晶硅薄膜中的非晶硅在预设区域内按照所述温度调节模块的温度调节方向结晶形成多晶硅薄膜，其中所述预设区域为与所述温度调节模块的位置相对应的所述非晶硅薄膜上的区域。
  10. 根据权利要求书9所述的使用所述准分子激光退火装置进行退火的方法，其中所述温度调节模块为设置在所述承载面上的吸光部分和反光部分。
  11. 根据权利要求书10所述的使用所述准分子激光退火装置进行退火的方法，其中在所述对所述非晶硅薄膜进行退火处理过程中，在所述非晶硅薄膜的第一部分和第二部分形成温度梯度，其中所述第一部分为所述非晶硅薄膜上与所述基板载台的反光部分所对应的区域，所述第二部分为所述非晶硅薄膜上与所述基板载台的吸光部分所对应的区域。
  12. 根据权利要求书11所述的使用所述准分子激光退火装置进行退火的方法，其中所述在所述非晶硅薄膜的第一部分和第二部分形成温度梯度的步骤具体为：所述非晶硅薄膜的第一部分吸收照射的准分子激光束的能量以及所述反光部分反射的准分子激光束的能量，所述非晶硅薄膜的第二部分吸收照射的准分子激光束的能量。
  13. 根据权利要求书11所述的使用所述准分子激光退火装置进行退火的方法，其中所述温度调节模块的温度调节方向为：沿所述第二部分朝向所述第一部分的方向。
  14. 根据权利要求书10所述的使用所述准分子激光退火装置进行退火的方法，其中所述吸光部分和所述反光部分嵌入所述基板载台内。
  15. 根据权利要求书10所述的使用所述准分子激光退火装置进行退火的方法，其中所述基板载台上设置有至少两个吸光部分和至少两个反光部分，所述吸光部分和所述反光部分交错分布在所述基板载台上。
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