WO2016038965A1 - Matériau métallique et composant électronique dans lequel il est utilisé - Google Patents

Matériau métallique et composant électronique dans lequel il est utilisé Download PDF

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WO2016038965A1
WO2016038965A1 PCT/JP2015/067813 JP2015067813W WO2016038965A1 WO 2016038965 A1 WO2016038965 A1 WO 2016038965A1 JP 2015067813 W JP2015067813 W JP 2015067813W WO 2016038965 A1 WO2016038965 A1 WO 2016038965A1
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metal
metal particles
particle
particles
melting point
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PCT/JP2015/067813
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English (en)
Japanese (ja)
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栄希 足立
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富士電機株式会社
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Priority to JP2016547732A priority Critical patent/JP6465116B2/ja
Publication of WO2016038965A1 publication Critical patent/WO2016038965A1/fr

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C5/00—Alloys based on noble metals
    • C22C5/02—Alloys based on gold
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C5/00—Alloys based on noble metals
    • C22C5/06—Alloys based on silver
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19107—Disposition of discrete passive components off-chip wires

Definitions

  • the present invention relates to a metal material used as a bonding material between members, an electrode material of an electronic component, or the like.
  • Patent Document 1 listed below has an invention in which a coarse particle powder and a fine particle powder having an average particle size equal to or less than 1/3 of the average particle size of the coarse particle powder are subjected to heat treatment to obtain a polycrystal. It is disclosed.
  • the average particle size of the coarse particle powder is set to 1 to 20 ⁇ m.
  • Patent Document 1 mentions an improvement in denseness as an effect.
  • a sintered body can be obtained by performing a heat treatment on the paste containing particles having different sizes.
  • Such a sintered body can be used as a joined body for joining members, an electrode of an electronic component, or the like.
  • the melting points of the metal particles are different as described above, there is a method of reducing the residual stress by setting a plurality of heat treatment temperatures in accordance with the melting points of the metal particles.
  • the control of the heat treatment temperature becomes complicated, and further, the heat treatment process takes time, so that the yield is lowered.
  • excessive heat is applied to the electronic parts by increasing the heat treatment temperature according to the metal particles having a high melting point. As a result, there were concerns about the performance degradation of electronic components.
  • Patent Document 2 the first metal powder and the second metal powder having an average particle diameter of 1 to 30 ⁇ m are used, and thereby the sintering temperature can be brought close to even metal powders having different compositions. .
  • the surface layer of the second metal particles is melted by raising the heat treatment temperature to a temperature at which the first metal powder melts.
  • the heat of fusion of the first metal powder is also applied, so that the second metal powder is more easily melted. That is, it is considered that the presence of the first metal powder and the second metal powder having different sizes can bring the sintering temperature closer than when each of them exists alone.
  • the invention described in Patent Document 2 also has a problem that the second metal powder cannot be melted and the residual stress tends to increase. That is, even if the sintering temperature is approached in the invention described in Patent Document 2, it is unclear how much the approaching temperature is approached, and it is not certain how the approach is actually performed.
  • the average particle size is set to 1 to 30 ⁇ m, and it cannot be said that the reduction of the sintering temperature due to the size effect is utilized, and the heat of fusion is taken into account as described above. Therefore, it is considered that the sintering temperature is approaching.
  • the invention described in Patent Document 2 tends to generate residual stress, and has not led to a substantial solution for suppressing the residual stress.
  • an object of the present invention is to provide a metal material capable of reducing the residual stress inside the sintered body and an electronic component using the same. There is to do. Furthermore, it is providing the metal material which can raise a filling rate, and an electronic component using the same.
  • the particle packing rate can be improved compared to the case where the particle size is uniform, but there is a concern about the problem due to the increase in internal stress due to the difference in melting point between particles. It was.
  • the melting point of gold fine particles prepared in a vacuum is approximately constant at about 1300K.
  • the particle diameter (diameter) is 5 nm or less, the melting point decreases in proportion to the size, and a difference in melting point of about 100 K occurs between each gold fine particle having a diameter of 4.75 nm and 5.25 nm.
  • metal particles are chemically synthesized, and an organic protective material such as antioxidant is adsorbed on the particle surface in the process to reduce the surface tension, prevent aggregation and chemically inactivate and stabilize.
  • the melting point itself for example, if small silver fine particles are used, they can be sintered at about 200 ° C. to 300 ° C.
  • the melting point of the largest particle among these particles is higher than the sintering temperature, it is clear that uniform sintering cannot be performed and residual stress may occur.
  • the melting point is adjusted from the aspect of the composition of the metal particles. That is, the two parameters of composition and particle diameter were used to adjust the melting points of metal particles having different sizes so as to be substantially the same. That is, the present invention is as follows.
  • the metal material in the present invention is composed of a plurality of types of metal particles, and each type of metal particles is characterized in that the composition and particle size are adjusted so that the melting points are substantially the same.
  • the melting point of each metal particle is made substantially the same by adjusting both the composition and the particle diameter of each metal particle. That is, in the present invention, in order to make the melting point of each metal particle substantially the same, the two parameters of the composition and the particle diameter of each metal particle are adjusted as appropriate, in order to make the melting point substantially the same and to obtain a high filling rate. It is possible to freely adjust the two parameters of composition and particle size.
  • a high filling rate can be obtained and the melting points of the respective metal materials can be made substantially the same, so that the respective metal particles can be uniformly melted, and the residual stress inside the sintered material can be compared with the conventional one. Can be effectively reduced.
  • the particle size of each type of the metal particles is determined so that the ratio between the constant determined based on the composition of the metal particles and the particle size of the metal particles is the same for each type of the metal particles. It is preferable to do.
  • the composition of each type of the metal particles is determined so that the ratio between the constant determined based on the composition of the metal particles and the particle size of the metal particles is the same for each type of the metal particles. It is preferable to do.
  • the particle diameter and the composition of the metal particles are preferably determined by the following formula (1).
  • r 1 is the particle diameter of the first metal particles formed in the first composition
  • T 0 m (x 1) and a (x 1) is a constant determined based on the first composition
  • r n is The particle diameters T 0 m (x n ) and a (x n ) of the nth metal particles formed with the nth composition are constants determined based on the nth composition.
  • the melting point of each metal particle can be easily and appropriately made substantially the same.
  • the above formula (1) it is possible to easily and accurately obtain a composition and a particle size having substantially the same melting point.
  • At least one of the metal particles comprises a plurality of metal elements. This makes it possible to obtain a composition and a particle size that have substantially the same melting point more easily and with better accuracy.
  • the metal element is preferably composed of silver and at least one of gold and copper.
  • gold or copper in the so-called silver nanopaste, a metal material can be obtained that has a higher filling rate than before and can sufficiently reduce the residual stress inside the sintered body.
  • a metal material containing silver and gold or copper can be effectively used as a bonding material between members.
  • the metal element is preferably composed of nickel and tungsten.
  • the metal particles composed of nickel and tungsten By making the metal particles composed of nickel and tungsten, the melting point drop accompanying the reduction in the diameter of the nickel particles is compensated by the addition of tungsten, the filling rate is higher than before, and the residual stress inside the sintered body is increased. A metal material that can be made sufficiently small can be obtained. A metal material containing nickel and tungsten can be effectively used for the internal electrode of the multilayer ceramic capacitor.
  • the particle diameter is preferably adjusted to a radius of 0.5 nm to 200 nm.
  • the particle diameter (radius) is smaller than that described in the above-mentioned patent document, and the particle diameter becomes small, so that the relative change of the surface energy becomes very large and accompanying the size variation. Melting point changes become prominent. That is, in the present invention, the melting point change accompanying the size variation can be utilized, and the particle diameter and the composition can be adjusted from each side so that the melting point of each metal particle is substantially the same. It becomes easy to adjust so that melting
  • the filling rate of the metal particles is preferably within a range of 0.74 to 0.99.
  • the filling rate of metal particles can be increased.
  • the melting point of each metal particle is adjusted from both the composition and the particle diameter so as to be substantially the same, it is easy to adjust the particle diameter so that the packing rate is as high as possible. For this reason, it becomes possible to obtain a high filling rate easily and appropriately as described above.
  • metal material of the present invention can be used as a bonding material for bonding members.
  • the electronic component according to the present invention is characterized in that a sintered body obtained by sintering the metal material described above is used.
  • a sintered body obtained by sintering the metal material described above is used.
  • the residual stress inside the sintered body used for electronic parts can be reduced as compared with the conventional one. Therefore, the sintered body is free from cracks and the like, has excellent bonding properties and electrical conductivity, and has stable performance. Can be.
  • a high filling rate can be obtained and the melting points of various metal materials can be made substantially the same, so that various metal particles can be uniformly melted, and the residual stress inside the sintered body can be compared with the conventional one. Can be effectively reduced.
  • FIG. 1 It is a partial schematic diagram which shows the metallic material and melting state in this invention. It is a partial schematic diagram which shows the melting state of the metal material in the past. It is a schematic diagram illustrating a plurality of melting point curves having different particle diameters (radius) on a graph in which the horizontal axis represents the composition ratio and the vertical axis represents the melting point of the metal particles. It is a cross-sectional schematic diagram which shows the structure of a 1st electronic component. It is a cross-sectional schematic diagram which shows the structure of a 2nd electronic component. FIG.
  • FIG. 5 is a graph illustrating a plurality of melting point curves having different particle diameters (radius) on a graph in which the horizontal axis represents the composition ratio of gold and silver and the vertical axis represents the melting point of Ag—Au particles.
  • FIG. 5 is a graph illustrating a plurality of melting point curves with different particle diameters (radius) on a graph in which the horizontal axis represents the composition ratio of silver and copper and the vertical axis represents the melting point of Ag—Cu particles.
  • FIG. 5 is a graph illustrating a plurality of melting point curves having different particle diameters (radius) on a graph in which the horizontal axis represents the composition ratio of nickel and tungsten and the vertical axis represents the melting point of Ni—W particles.
  • the present embodiment is a metal material having a plurality of types of metal particles. These metal particles have different particle sizes.
  • the melting point of the metal particles depends on the particle diameter, the surface tension, and the latent heat.
  • the proportionality factor between the melting point and the particle diameter of the metal particles is determined by surface tension and latent heat.
  • the present embodiment also utilizes the fact that the surface tension and the latent heat change depending on the composition of the metal particles. That is, in the present embodiment, it is possible to control the melting point not only from the particle diameter but also from the composition of the metal particles.
  • the melting point of each part of the metal material is adjusted to be uniform.
  • the surface tension and latent heat are controlled by adjusting the composition of each type of metal particle. At this time, the composition is adjusted so that the melting points of the large particles and the small particles are substantially the same.
  • FIG. 1 is a partial schematic diagram showing a metal material and a melting state in the present embodiment.
  • the metal material is in a paste form and can also be referred to as a conductive paste. Since the metal material is in a paste form, it can be applied or printed on a predetermined surface.
  • the metal material 10 of the present embodiment includes, for example, first metal particles 1 and second metal particles 2.
  • the particle diameter (radius) r 1 of the first metal particles 1 is larger than the particle diameter (radius) r 2 of the second metal particles 2.
  • the particle diameter is indicated by a radius, but may be indicated by a diameter.
  • the first metal particles 1 and the second metal particles 2 have a substantially spherical shape, but may have a shape other than a substantially spherical shape.
  • the substantially spherical shape means that the ratio of the length of the maximum particle diameter and the minimum particle diameter to the average particle diameter is in the range of 0.8 to 1.2.
  • the length ratio is set from (minimum particle diameter / average particle diameter) to (maximum particle diameter / average particle diameter).
  • the average particle diameter is an average value of the maximum particle diameter and the minimum particle diameter.
  • the radius of each metal particle can be set with an average particle diameter.
  • each metal particle has a shape other than a substantially spherical shape
  • the long side and the short side of each metal particle can be obtained, and the average value of the long side and the short side can be set as the particle diameter.
  • the average particle diameter can be measured by a transmission electron microscope, a scanning electron microscope, or an optical method using dynamic light scattering or Mie scattering.
  • Both the first metal particles 1 and the second metal particles 2 shown in FIG. 1A are alloys made of the first metal A and the second metal B. That is, the first metal particle 1 and the second metal particle 2 are both represented by A x B (1-x) (x is a composition ratio), but the first metal particle 1 and the second metal particle 2 The composition ratio x differs from the particle 2.
  • the composition ratio x can be obtained by weight ratio, volume ratio or atomic ratio.
  • Each metal particle 1, 2 constitutes a solid solution of the first metal A and the second metal B.
  • composition means a constituent component of metal particles and is a concept including a constituent ratio.
  • composition ratio refers to a constituent ratio.
  • the composition ratio x and the particle diameter are adjusted so that the melting points of the first metal particles 1 and the second metal particles 2 are substantially the same. That is, the melting point varies depending on the two parameters of the composition ratio x and the particle diameter.
  • the melting point is adjusted to adjust the two parameters of the composition ratio x and the particle diameter, and the melting point of each metal particle is substantially the same. It is said.
  • substantially the same is a concept including manufacturing errors, and the difference is almost the same as long as there is almost no melting residue in the sintering process and cracks due to residual stress in the sintered body. It is assumed to be inside. Specifically, it indicates that the ratio of the melting point difference [(maximum melting point ⁇ minimum melting point) / average melting point] is not more than the sum of the variation ratio of the particle diameter and the variation ratio of the composition.
  • the average melting point is indicated by an average value of the maximum melting point and the minimum melting point.
  • an organic protective material (not shown) is adsorbed on the surfaces of the metal particles 1 and 2 to prevent oxidation or aggregation.
  • the metal particles 1 and 2 having the organic protective material adsorbed on the surface are kneaded together with the organic solvent for dispersion, the resin for viscosity adjustment, the flux component, etc. to constitute a paste-like metal material.
  • the organic protective material is preferably a low molecular weight molecule having a molecular weight of about 100 to 200, such as citric acid (molecular weight is 192) or sorbic acid (molecular weight is 112), which is easily desorbed during sintering.
  • the material of the organic protective material used can be changed according to the metal component constituting the metal particles.
  • the melting point of the metal particles adsorbed by the organic protective material is lower than the melting point in the state where the organic protective material is not adsorbed, but the melting point of each metal particle in this embodiment is the adsorption of the organic protective material. It is a melting point in a state where it is not in the state of being adsorbed or in a state of being not adsorbed. Therefore, the melting point of the first metal particles 1 and the second metal particles 2 may not be substantially the same at a temperature lower than the temperature at which the organic protective material is desorbed. However, if the organic protective material is detached before the sintering temperature is reached, the organic protective material disappears on the surfaces of the first metal particles 1 and the second metal particles 2, and the metal particles themselves are configured.
  • the melting points of the first metal particle 1 and the second metal particle 2 are substantially the same. Therefore, in the state of the metal material 10 in FIG. 1A, even when the melting points of the first metal particles 1 and the second metal particles 2 are not substantially the same, the heat is applied and the organic protective material is detached. If the melting points of the first metal particles 1 and the second metal particles 2 are substantially the same, they are included in the scope of the present embodiment.
  • the organic protective material adsorbed on the surface of the metal particles is a low molecular weight organic substance as described above, the organic protective material can be appropriately detached before reaching the sintering temperature.
  • Each metal particle 1 and 2 shown in FIG. 1A is an alloy of, for example, silver (Ag) and gold (Au). Silver and gold are dissolved in an arbitrary ratio, and the melting point of the solid solution can be adjusted between 1235K and 1337K. Therefore, by appropriately adjusting the particle diameter (size) and the composition ratio that can be controlled independently, the melting points of a plurality of metal particles having different sizes in which silver and gold are dissolved can be made substantially the same.
  • Heat is applied to the metal material 10 shown in FIG. 1A to melt the first metal particles 1 and the second metal particles 2. At this time, since the melting points of the first metal particles 1 and the second metal particles 2 are substantially the same, as shown in FIG. 1B, each metal particle is uniformly melted to obtain a sintered body with little residual stress. be able to.
  • the particle diameter (radius) of each metal particle in the present embodiment is nano-order. As a result of such fine particles, the relative change in surface energy becomes very large even with a slight change in particle diameter, and the melting point change accompanying the size variation becomes remarkable.
  • the particle diameter (radius) of each metal particle is preferably adjusted within the range of 0.5 nm to 200 nm.
  • the particle diameter (radius) here is defined by the average particle diameter of the maximum particle diameter and the minimum particle diameter as described above when the metal particles are not spherical. In the present embodiment, the particle diameter (radius) is smaller than that described in the patent literature.
  • the melting point change accompanying the size variation can be effectively used, and it is easy to match freely from each parameter of the particle diameter and the composition so that the melting point of each metal particle is substantially the same. It is easy to adjust so that the melting points of the respective metal particles are substantially the same.
  • the particle diameter (radius) is more preferably 0.7 nm or more, and further preferably 0.9 nm or more.
  • the particle diameter (radius) of the metal particles is nano-order, about 200 nm at the maximum, thereby utilizing the fact that the melting point changes significantly with the size variation, It becomes possible to adjust with high degree of freedom from the parameters of the composition and the particle diameter so that the melting points are the same among the metal particles.
  • the difference in particle diameter of each metal particle is preferably 5% or more away from the particle diameter of the largest large particle.
  • the difference can be obtained by [(particle diameter of large particles ⁇ particle diameter of target particles) / particle diameter of large particles] ⁇ 100 (%).
  • the fluctuation of the particle diameter of about 5% is common, in the present embodiment, it is distinguished from the conventional case that there is a difference of the particle diameter of 5% or more.
  • the filling rate of each metal particle in the metal material is preferably in the range of 0.74 to 0.99.
  • the filling rate is 1 for maximum and 0 for minimum.
  • a filling factor of 1 means that there is no gap between metal particles and the entire metal material is filled with metal particles.
  • the filling rate can be increased to 0.99 or more by filling small particles in the gap, but in such a case, since the types of metal particles to be used increase, the filling of each metal particle as a practical range
  • the rate was specified in the range of 0.74 to 0.99.
  • the filling rate can be measured by density measurement or BET method. Thus, according to this Embodiment, the filling rate of a metal particle can be raised.
  • the filling rate of each metal particle in the metal material can be in the range of 0.74 to 0.91.
  • the type of metal composing the alloy is not particularly limited and can be variously changed depending on the intended use. However, it is preferably a metal that can form a solid solution when an alloy is produced with a certain composition.
  • a metal material containing silver and gold or copper can be effectively used as a bonding material between members.
  • the melting point drop accompanying the reduction in the diameter of nickel particles is compensated by the addition of tungsten, which has a higher filling rate than in the past and has remained in the sintered body.
  • a metal material capable of sufficiently reducing the stress can be obtained.
  • a metal material containing nickel and tungsten can be effectively used for the internal electrode of the multilayer ceramic capacitor.
  • Mass melting point (T m) for a metal particles to (bulk) the melting point of the metal (T 0 m) is a sophisticated model can, the chemical potential of the metal particles at the melting point (T 0 m) near a temperature and pressure By developing, the relationship between T 0 m and T m can be shown in a simple form drawn up to the first order term, as shown in the following formula (2).
  • T m is the melting point of the metal particles
  • T 0 m is the melting point of the bulk metal
  • r is the particle diameter (radius) of the metal particles
  • the density of the metal (kg ⁇ m ⁇ 3 )
  • ⁇ H m is the latent heat (J ⁇ kg ⁇ 1 )
  • ⁇ s is the solid surface energy (J ⁇ m ⁇ 2 )
  • ⁇ l is the surface tension of the molten metal (N M ⁇ 1 )
  • ⁇ l is the density of the molten liquid (kg ⁇ m ⁇ 3 )
  • a is a constant determined by the metal composition.
  • first metal particles and second metal particles made of an alloy of two different metal elements.
  • Each metal particle is assumed to be a spherical alloy particle.
  • the melting point of the first metal particles is T m (x 1 )
  • the melting point of the first metal particles in the bulk is defined as T 0 m (x 1 )
  • the melting point of the second metal particles is T m (x 2 )
  • the melting point of the second metal particles in the bulk (bulk) is T 0 m (x 2 ).
  • the a value of the first metal particles obtained from the equation (2) is a (x 1 )
  • the a value of the second metal particles obtained from the equation (2) is a (x 2 )
  • r 1 is the particle diameter of the first metal particles formed with the first composition
  • T 0 m (x 1 ) and a (x 1 ) are constants determined based on the first composition
  • r 2 is The particle diameters T 0 m (x 2 ) and a (x 2 ) of the second metal particles formed with the second composition are constants determined based on the second composition.
  • the melting points of the first metal particles and the second metal particles can be made the same. From equation (3), the particle size of each type of metal particle is determined so that the ratio between the constant determined based on the composition of the metal particle and the particle size of the metal particle is the same for each type of metal particle. Alternatively, it is understood that the melting point of the first metal particle and the second metal particle can be made the same by determining the composition ratio of each type of metal particle.
  • the metal material includes the first metal particles and the second metal particles
  • the particle diameters r 1 and r 2 are determined so that the ratio with r 2 matches, or the composition ratios x 1 and x 2 are determined.
  • said Formula (3) can be deform
  • the particle diameter (radius) r 1 and r 2 can be determined within the range shown in the following equation (5).
  • the relationship between the particle diameter r 1 and the particle diameter r 2 can be obtained from Equation (4). Therefore, if the particle diameters r 1 and r 2 and the composition ratios x 1 and x 2 having different sizes are set so as to satisfy the formula (4), the melting points of the first metal particles and the second metal particles are set. Can be the same.
  • Formula (4) since Formula (4) only changed the form of Formula (3), in other words, adjusting the particle diameters r 1 and r 2 and the composition ratios x 1 and x 2 from Formula (4) This means that the particle diameters r 1 and r 2 and the composition ratios x 1 and x 2 are adjusted based on the formula (3).
  • relational expression assumes metal particles in a vacuum, the surface tension is large, the particle diameter is several nanometers, and the melting point drop tends to appear remarkably. It is also possible to use a relational expression that takes into account the size dependence of surface energy and surface tension, or a relational expression for surface-protected metal particles in the liquid phase.
  • the first metal particles are adjusted by adjusting the particle diameters r 1 and r 2 and the composition ratios x 1 and x 2 having different sizes so as to satisfy the expressions (3) and (4).
  • the second metal particles can have substantially the same melting point.
  • a melting point curve calculated using the composition ratio and the particle diameter as variables is derived, and based on the melting point curve, the particle diameter and the composition ratio at which the melting points of the respective metal particles are substantially the same are calculated, so that it is simple and appropriate.
  • the particle size and composition ratio can be adjusted.
  • the melting point curve can be derived using the above formula (1). That is, the melting point curve can be obtained by introducing the following formulas (6) and (7) into the above formula (1).
  • T 0 m (x) is the melting point of the bulk metal when the composition ratio of metal A is x in the solid solution of metal AB
  • T 0 A is the bulk (bulk) of metal A
  • T 0 B is the melting point of the bulk metal of the metal B
  • x is the composition ratio of the metal A
  • a (x) is the formula (1) when the composition ratio is x
  • the a value obtained from the equation (7) is obtained by approximating a by a quadratic equation, and both r and x in the equation (1) are variables.
  • Expression (7) is an approximate expression when T 0 m (x) can be written as in Expression (6) and other numerical values shown in Expression (1) can be written in the same manner.
  • Equation (8) the equation of the melting point curve shown in Equation (8) below can be obtained.
  • FIG. 3 shows a plurality of melting point curves when the particle diameter r is fixed at, for example, Cnm, Dnm, Enm, and Fnm and the composition ratio x is changed between 0 and 1. It can be illustrated as follows.
  • FIG. 3 a plurality of melting point curves with different particle diameters are shown on the graph with the composition ratio on the horizontal axis and the melting point on the vertical axis, but the composition ratios differ on the graph with the particle diameter on the horizontal axis and the melting point on the vertical axis.
  • a plurality of melting point curves can also be illustrated.
  • the composition ratio and particle diameter at which the melting point is T 2 are determined from FIG. That is, as shown in FIG. 3, the composition ratio and then and particle sizes and Enm x 1, also the composition ratio With and Dnm particle size and x 2, to the melting point of each of the metal particles and T 2 Can do.
  • the present embodiment has a characteristic part in that it is composed of a plurality of types of metal particles, and each type of metal particles is adjusted in composition and particle size so that the melting points are substantially the same.
  • the two parameters of the composition and particle diameter of each metal particle are appropriately adjusted, and the composition is obtained in order to obtain a high filling rate. It is possible to freely adjust the two parameters of particle size and particle size. Therefore, in this embodiment, a high filling rate can be obtained and the melting points of the respective metal materials can be made substantially the same, so that each metal particle can be uniformly melted, and the residual stress inside the sintered body can be reduced. It can reduce effectively compared with the past.
  • Two or more metal elements may be used for producing the metal particles.
  • the number of metal elements coincides with the number of metal particles having different particle diameters. That is, when the number of metal elements is two, the number of metal particles is two, and when the number of metal elements is three, the number of metal particles is three.
  • the above-mentioned formulas (3), (4), and (8) are all cases where the metal element is 2, but even when there are three or more types, the formulas (3), (4), and Based on an equation according to Equation (8), it is possible to obtain three or more combinations of composition and number of particles.
  • one metal particle among the plurality of metal particles may be formed of pure metal. That is, for example, when producing metal particles from metal A and metal B, if the composition ratio of metal A of the first metal particles is 1 and the composition ratio of metal B is 0, the first metal particles are metal A. It will be formed only by. However, the second metal particles are alloy particles including both metal A and metal B. Therefore, “a plurality of types of metal particles” means that one metal particle has a composition ratio of one metal of 1 other than that in which all metal particles are alloy particles of two or more metal elements, A composition having a composition ratio of 0 and the remaining metal particles made of alloy particles of two or more metals is also included.
  • the usage of the metal material is not particularly limited.
  • the metal material 10 can be used as a bonding material between members.
  • FIG. 4 is a schematic cross-sectional view showing the structure of the first electronic component.
  • the power semiconductor module 30 is mounted on the heat sink 31. Then, the printed wiring board 32 and the printed wiring board 33 on which electronic circuit components are mounted are arranged above the power semiconductor module 30, and the printed wiring boards 32 and 33 are joined by pins 34 or the like. As shown in FIG. 4, the printed wiring board 32 is covered with a cover 35 from above the printed wiring boards 32 and 33 and the side of the power semiconductor module 30.
  • the insulating substrate 36 has a configuration in which an insulating layer 42 is formed on the surface of the metal base 41 and a circuit pattern 43 is formed on the surface of the insulating layer 42.
  • the insulating layer 42 is formed by, for example, solidifying an epoxy resin containing an inorganic filler.
  • the back surface electrode of the power semiconductor element 37 is bonded onto the circuit pattern of the insulating substrate 36. Further, the surface electrode of the power semiconductor element 37 is electrically connected to the circuit pattern 43 via a wire 38. Further, the connection lead terminals 45 and 46 are joined to the circuit pattern 43 by soldering or the like.
  • the power semiconductor module 30 and the printed wiring boards 32 and 33 are electrically connected via connection lead terminals 45 and 46.
  • the power semiconductor module 30 and the heat sink 31 are joined via the metal material 10 in the present embodiment as a joining material (not shown in FIG. 4).
  • the paste-like metal material 10 is applied between the power semiconductor module 30 and the heat sink 31, and the metal material 10 is sintered by heating the power semiconductor module 30 and the heat sink 31 through the metal material 10.
  • the sintered body is formed by pressurizing in air or in a reducing atmosphere, preferably under no pressure.
  • the heating temperature at this time varies depending on the paste material to be used, but is about 473 K (200 ° C.) to 573 K (300 ° C.).
  • the heating time may be as short as 5 to 90 minutes.
  • the filling rate of the metal particles 1 and 2 contained in the metal material 10 can be improved, the void ratio of the obtained sintered body is small, and the power semiconductor module 30 and The bonding strength and conductivity with the heat sink 31 can be kept high.
  • the melting points of the first metal particles 1 and the second metal particles 2 are substantially the same, the first metal particles 1 and the second metal particles 2 can be uniformly melted, and the residual stress Generation
  • the metal material 10 of the present embodiment even when the heating time is short at a reduced pressure, by using the metal material 10 of the present embodiment, it is possible to obtain a sintered body with a small residual stress and a small defect portion such as a void. Yes, it is possible to improve the yield.
  • FIG. 5 is a schematic cross-sectional view showing the structure of the second electronic component.
  • the insulating substrate 50 includes an insulating layer 51 and an electrode 52 provided on the surface thereof.
  • the semiconductor chip 53 is bonded onto the electrode 52.
  • lead pins 54 are fixed to the surface of the semiconductor chip 53.
  • the semiconductor chip 53 is sealed with a resin 61.
  • the metal material (conductive paste) of the present embodiment can be used as the bonding material 60 for bonding the lead pin 54 and the semiconductor chip 53.
  • the metal material of this Embodiment can be used as an electrode material, and the electrode 52 can be formed.
  • each metal particle can be accurately produced by an existing method such as a liquid phase reduction selective precipitation method, a water atomization method, or a gas atomization method so as to have a particle diameter and composition calculated in advance. it can.
  • Example 1 Metal particles obtained by alloying silver (Ag) and gold (Au) were obtained. At this time, it is assumed that the melting point of the alloy can be expressed by Equation (9). x is a composition ratio and can be set within a range of 0 to 1.
  • the melting point T m of a metal particle (spherical particle) having a particle diameter (radius) r and a composition ratio x can be obtained by substituting Equation (9) and Equation (10) into Equation (1). It can be shown as follows.
  • Formula (11) is a formula of a melting point curve. Based on the equation (11), for example, the horizontal axis represents the composition ratio x and the vertical axis as a melting point T m, with respect to each different particle diameter, derived a plurality of melting curve showing the relationship between the composition ratio and melting point. The graph is shown in FIG.
  • the particle diameter (radius) was changed in increments of 0.1 nm from 0.7 to 1.0 nm, and the change in melting point with respect to the composition ratio x at each particle diameter was determined. It was found that when the composition ratio is the same, the melting point is different by 100 k or more only by the particle diameter being different by about 0.1 nm. Accordingly, it was found that the plurality of metal particles having the same composition ratio but different particle diameters have greatly different melting points, and residual stress is likely to occur in the sintered body.
  • Example 2 Metal particles obtained by alloying silver (Ag) and copper (Cu) were obtained. The physical properties of silver and copper are shown in Table 2 below.
  • Equation (12) and Equation (13) the melting point of the Ag—Cu alloy particles was calculated, and a plurality of melting point curves were shown on the graph of FIG. That is, in FIG. 7, the vertical axis and the horizontal axis is the composition ratio x as the melting point T m, with respect to each different particle diameter, derived a plurality of melting curve showing the relationship between the composition ratio and melting point.
  • a conductive paste having silver nanoparticles can be used as a bonding material between members, but by mixing copper with silver as in Example 2, a dense bonding layer (sintered body) is formed and cost is reduced. Down is now possible. With these two particles, a maximum filling rate of 0.81 could be obtained.
  • Example 3 Metal particles obtained by alloying nickel (Ni) and tungsten (W) were obtained. The physical properties of nickel and tungsten are shown in Table 3 below.
  • Equation (14) and Equation (15) the melting point of the Ni—W alloy particles was calculated, and a plurality of melting point curves were shown on the graph of FIG. That is, in FIG. 8, a vertical axis and a horizontal axis and the composition ratio x as the melting point T m, with respect to each different particle diameter, derived a plurality of melting curve showing the relationship between the composition ratio and melting point.
  • the melting point of the Ni—W alloy particles is calculated, and the Ni—W ratio is approximately proportional to the composition ratio (W concentration) x. It was found that the melting point of the W alloy particles increased.
  • Ni-W particles with 16.8% W added to Ni particles with a particle size (radius) of 200 nm are mixed, Ni-W particles with a particle size (radius) of 5 nm are effective in the gaps between Ni particles. It was found that uniform sintering was possible because each particle could be simultaneously sintered at 1720K. With these two particles, a maximum filling factor of 0.91 could be obtained.
  • the conductive paste having Ni—W particles shown in Example 3 can be used, for example, for an internal electrode of a multilayer ceramic capacitor.
  • the particle diameter of nickel used for internal electrodes of multilayer ceramic capacitors has been reduced to about 100 to 600 nm.
  • the surface is protected with organic molecules to prevent aggregation and oxidation of metal particles.
  • Metals that are easily oxidized, such as copper, are protected with an organic polymer such as polyvinyl alcohol.
  • the filling rate of the contained metal particles can be increased, and the melting points of the metal particles having different particle diameters can be made substantially the same.
  • the residual stress can be suppressed as much as possible compared to the conventional case. For this reason, even when the pressing force and pressurizing time are short during sintering, a sintered body excellent in bonding strength and conductivity can be obtained as a bonding material between members, for example. For this reason, it can be preferably applied to a mounting technique of a SiC power semiconductor.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Powder Metallurgy (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
  • Non-Insulated Conductors (AREA)
  • Conductive Materials (AREA)

Abstract

　Cette invention concerne un matériau métallique permettant d'accroître la vitesse de remplissage et de réduire la contrainte résiduelle à l'intérieur d'un comprimé fritté. L'invention concerne en outre un composant électronique, dans lequel ledit matériau peut être utilisé. Ledit matériau métallique (10) est caractérisé en ce qu'il comprend de multiples types de particules métalliques (1, 2), la composition et le diamètre de particule de chaque type de particules métalliques (1, 2) étant ajustés de telle sorte que leurs points de fusion sont approximativement identiques. Du fait que l'invention assure l'obtention d'une vitesse de remplissage élevée, et de points de fusion approximativement identiques pour chaque type de particule métallique, chaque type de particule métallique peut être fondu de manière homogène, et la contrainte résiduelle à l'intérieur d'un comprimé fritté peut être efficacement réduite à un degré jusqu'à présent inégalé.
PCT/JP2015/067813 2014-09-10 2015-06-22 Matériau métallique et composant électronique dans lequel il est utilisé WO2016038965A1 (fr)

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