WO2016037466A1

WO2016037466A1 - Light emitting diode device and manufacturing method therefor

Info

Publication number: WO2016037466A1
Application number: PCT/CN2015/073460
Authority: WO
Inventors: 黄苡叡; 卓佳利; 林科闯; 林素慧; 徐宸科
Original assignee: 厦门市三安光电科技有限公司
Priority date: 2014-09-09
Filing date: 2015-03-02
Publication date: 2016-03-17
Also published as: CN104183686B; CN104183686A

Abstract

A light emitting diode device and a manufacturing method therefor. The light emitting diode device (200) comprises: an LED chip (210) which has an upper surface (210a) and a lower surface (210b) which are opposite and a side wall (210c) which connects the upper and lower surfaces, wherein the lower surface is provided with a first electrode (212) and a second electrode (214), and there is a gap between the first electrode and the second electrode for achieving electrical isolation between the two electrodes; an encapsulating material layer (220) which covers the upper surface of the LED chip and is used for protecting and supporting the LED chip; an insulating layer (230) which fills the gap and extends to the first electrode and the second electrode to cover part of the surface thereof close to the gap, and is thicker than the first and second electrodes; and a solder electrode layer (240) which covers the first and second electrodes of the LED chip and by which connection is performed when the light emitting diode device is mounted on a circuit board. The light emitting diode device can be directly mounted on a circuit board by heating for use, without adopting a reflow soldering device.

Description

Light emitting diode device and manufacturing method thereof

The present application claims priority to Chinese Patent Application No. 201410454696.5, entitled "Light Emitting Diode Device and Method of Making Same", filed on September 9, 2014, the entire contents of which is incorporated herein by reference. .

Technical field

The invention relates to the field of semiconductor illumination, in particular to a white light emitting diode device and a manufacturing method thereof.

Background technique

Light Emitting Diode (LED) is a semiconductor light emitting device fabricated by the principle of semiconductor P-N junction electroluminescence. LED has the advantages of environmental protection, high brightness, low power consumption, long life, low operating voltage, easy integration, etc. It is the fourth generation of new light source after incandescent lamp, fluorescent lamp and high intensity discharge (HID).

Referring to FIG. 1, there is a conventional white light emitting diode device 100 comprising a flip-chip LED chip 110 and a package body 120 covering an upper surface and a sidewall of a flip-chip LED chip 110. The first electrode 112 and the second electrode 114 of the LED chip are exposed. The white light emitting diode device is generally mounted on a circuit board for use, but the solder is required to be soldered by a large reflow soldering device for installation, and the process is complicated and the cost is high.

Summary of the invention

In view of the above problems, the present invention provides an LED device and a method of fabricating the same, which can be directly mounted on a circuit board by heating, without the need to add solder for reflow soldering.

According to a first aspect of the present invention, a light emitting diode device includes: an LED chip having opposite upper and lower surfaces and side walls connecting the upper and lower surfaces, wherein the first surface and the first electrode are provided on the lower surface An electrode having a gap between the first electrode and the second electrode to achieve electrical isolation between the two electrodes; a layer of encapsulating material covering the upper surface of the LED chip for protecting and supporting the LED chip; An insulating layer filling the gap and extending to the first electrode and the second electrode to cover a portion of the surface close to the gap, the thickness of which is greater than the thickness of the first and second electrodes; and the solder electrode layer covering the The first and second electrodes of the LED chip are flush with the insulating layer, and when the LED device is mounted on the circuit board, the solder electrode layer is connected.

Preferably, the gap between the first and second electrodes of the LED chip is 100 μm to 200 μm.

Preferably, the first and second electrodes of the LED chip respectively have two ends, wherein the first end of the LED chip contacts the lower surface, and the second end contacts the solder electrode layer, the first The second end of the electrode The second ends of the two electrodes are flush.

Preferably, the projection of the first and second electrodes and the insulating layer on the LED chip occupies the lower surface of the entire chip.

Preferably, the insulating layer has a width of 300 μm to 400 μm.

Preferably, the insulating layer covers the first and second electrodes of the LED chip, and the area of the first and second electrodes is 10% to 60% of the surface of the first and second electrodes. Preferably, the insulating layer is a solder resist material.

Preferably, the thickness of the encapsulating material layer is from 250 μm to 2000 μm.

Preferably, the solder electrode layer and the insulating layer form a flattened surface that completely covers the lower surface of the LED chip.

In a preferred embodiment, the encapsulating material layer further covers the sidewall of the LED chip, and extends toward the outer periphery of the chip to expose a portion of the bottom surface, the bottom surface and the first and second electrodes of the LED chip. One side of the surface of the far lower surface is flush. More preferably, the solder electrode layer also covers the exposed bottom surface of the encapsulating material layer.

In another preferred embodiment, the LED device further includes an insulating reflective layer covering the bottom surface of the encapsulation material layer and a portion of the first and second electrodes of the LED chip.

According to a second aspect of the present invention, a method of fabricating a light emitting diode device includes the steps of: providing an LED chip having opposing upper and lower surfaces and sidewalls connecting the upper and lower surfaces, wherein the lower surface is provided a first electrode and a first electrode, a gap between the first electrode and the second electrode, to achieve electrical isolation between the two electrodes; the LED chip is arranged on a temporary carrier, the LED chip a surface facing upward; forming a layer of encapsulation material on the first surface of the LED chip for protecting and supporting the LED chip; removing the temporary carrier and flipping the device such that the LED chip is first a second electrode is facing upward; an insulating layer is formed on the second surface of the LED chip by a screen printing method, filling a gap between the first and second electrodes, and toward the first electrode, The second electrode extends over a portion of the surface adjacent to the gap, the thickness of which is greater than the thickness of the first and second electrodes; and a solder electrode layer is formed on the first and second electrodes of the LED chip by screen printing. With the stated Flush edge layer constituting the light emitting diode device, when the light emitting diode device is mounted on a circuit board, are connected by the solder electrode layer.

Preferably, before forming the solder electrode layer, an insulating reflective layer is formed to cover the bottom surface of the encapsulating material layer and a portion of the first and second electrodes of the LED chip.

Preferably, the temporary carrier is an adhesive film.

According to a third aspect of the present invention, a method of fabricating a light emitting diode device includes the steps of: providing an LED epitaxial wafer having a growth substrate and a light emitting epitaxial stack formed over the growth substrate, Growing a surface on one side of the substrate is a first surface, and a surface on a side away from the growth substrate is a second surface; a light-emitting epitaxial stack of the epitaxial wafer is unitized, and first and second electrodes are formed on the second surface to form a series of LED chip units having a gap between the first and second electrodes; providing a temporary carrier for bonding the processed LED epitaxial wafer to the temporary carrier, the first surface facing upward; Removing a growth substrate of the LED epitaxial wafer; coating a layer of encapsulation material on the first surface of the LED epitaxial wafer; removing the temporary carrier, and flipping the LED epitaxial wafer such that the first and second electrodes Upward; forming an insulating layer on the second surface of the LED epitaxial wafer by using a screen printing method, filling a gap between the first and second electrodes, and facing the first electrode and the second electrode Extendingly covering a portion of the surface adjacent to the gap, the thickness of which is greater than the thickness of the first and second electrodes; forming a solder electrode layer on the first and second electrodes of the LED chip by screen printing, The insulation layer is flush; The singulated LED epitaxial wafer, a light emitting diode device, when the light emitting diode device is mounted on a circuit board, are connected by the solder electrode layer.

Preferably, the formed insulating layer covers the first and second electrodes to occupy 10% to 60% of the total surface of the first and second electrodes.

According to a fourth aspect of the present invention, a method of fabricating a light emitting diode device includes the steps of: providing an LED epitaxial wafer having a growth substrate and a light emitting epitaxial stack formed over the growth substrate, a surface of one side of the growth substrate is a first surface, and a side surface away from the growth substrate is a second surface; a layer of encapsulation material is formed on the second surface of the epitaxial wafer of the LED; and the growth substrate is removed The illuminating epitaxial stack of the epitaxial wafer is unitized, and the first and second electrodes are formed on the first surface to form a series of LED chip units, wherein the first and second electrodes have a gap therebetween; Forming an insulating layer on the first surface of the LED epitaxial wafer, filling a gap between the first and second electrodes, and extending to the first electrode and the second electrode to cover a portion of the surface close to the gap a thickness greater than a thickness of the first and second electrodes; forming a solder electrode layer on the first and second electrodes of the LED chip by screen printing, which is flush with the insulating layer; Outside the LED Singulated wafer, forming a light emitting diode device, when the light emitting diode device is mounted on a circuit board, the solder electrode layer is directly connected.

According to a fifth aspect of the invention, a mounting structure of a light emitting diode device having any one of the foregoing light emitting diode devices and a circuit board, the light emitting diode device being connected to the electrode plate by the solder electrode layer.

According to a sixth aspect of the present invention, a method of mounting an LED device, comprising the steps of: providing a circuit board; discharging any one of the foregoing LED devices on the circuit board, wherein the solder electrode layer and the circuit board Contacting, heating the circuit board, melting and solidifying the solder electrode layer to connect the circuit board.

Preferably, the heating temperature and the heating time are preset, and when the circuit board is heated, the temperature is raised to the preset temperature for heating, and after the preset time is reached, the heating is turned off. In the present invention, the solder electrode layer is formed by adding an insulating layer between the first electrode and the second electrode of the LED chip, so that the LED device can be directly pressed on the heated circuit board without using solder paste. Use huge reflow soldering equipment. Further, the high-reflection insulating layer is coated around the chip electrode and the bottom of the encapsulating material layer, and the mechanical strength between the reinforcing chip and the encapsulating material layer is increased, and the brightness reflection effect and the adhesion rate of the solder electrode layer are increased.

DRAWINGS

1 is a side cross-sectional view of a conventional white light emitting diode device.

2 is a perspective view of Embodiment 1 of the present invention.

Figure 3 is a cross-sectional view showing Embodiment 1 of the present invention.

Figure 4 is a cross-sectional view taken along line A-A of Figure 3.

Figure 5 is a bottom plan view of the light emitting diode device of Figure 2.

FIG. 6 is a schematic view showing the mounting of the LED device shown in FIG. 2. FIG.

FIG. 7 is a schematic view showing the mounting structure of the LED device shown in FIG. 2. FIG.

Figure 8 is a cross-sectional view showing a second embodiment of the present invention.

9 to 14 show a method of fabricating the LED device shown in Fig. 8.

15 to 18 show another manufacturing method of the LED device shown in Fig. 8.

Figure 19 is a cross-sectional view showing a third embodiment of the present invention.

20 to 24 show a method of fabricating the LED device shown in Fig. 19.

The numbers in the figure are as follows:

100, 200, 300, 500: LED device; 110, 210, 310, 410, 510: LED chip; 112, 212, 312, 412, 512: first electrode of the LED chip; 114, 214, 314, 414, 514 : a second electrode of the LED chip; 120, 220, 320, 420, 420: a layer of encapsulating material; 230, 330, 530: an insulating layer; 210a, 310a: an upper surface of the LED chip; 210b, 310b: a lower surface of the

LED chip

210c, 310c: sidewall of the LED chip; 240, 340, 540: solder electrode layer; 260: circuit board; 261: substrate; 262: circuit layer; 350: insulating reflective layer; 360, 460: temporary carrier; : LED epitaxial wafer; 400a, 500a: first surface of the LED epitaxial wafer; 400b, 500b: second surface of the LED epitaxial wafer.

detailed description

The LED device of the present invention and a manufacturing method thereof are described in detail below with reference to the schematic drawings, thereby making the present invention How to apply technical means to solve technical problems and achieve the realization of technical effects can be fully understood and implemented accordingly. It should be noted that the various embodiments of the present invention and the various features of the various embodiments may be combined with each other, and the technical solutions formed are all within the scope of the present invention.

2 and 3 show a first preferred embodiment of the present invention.

Referring to FIG. 2, an LED device 200 includes an LED chip 210, a package material layer 220, and a solder electrode layer 240, wherein an encapsulation material layer 220 covers an upper surface and a sidewall of the LED chip 210, and a solder electrode layer 240 covers the chip. The lower surface of 210 and the bottom surface of encapsulating material layer 220.

Referring to FIG. 3, the lower surface 210b of the LED chip 210 has a first electrode 212 and a second electrode 214 with a gap therebetween, and the width D1 of the gap may be 100 μm to 200 μm, which is 150 μm in this embodiment. The insulating layer 230 fills the gap and extends toward the first electrode 212 and the second electrode 214 to cover a portion of the surface close to the gap, and has a thickness greater than the thickness of the first and second electrodes. The insulating layer 230 may be provided with a solder resist layer having a width D2 of 250 to 600 μm. Referring to FIG. 4, the projection of the first and second electrodes and the insulating layer 230 on the LED chip occupies the lower surface of the entire chip.

The encapsulating material layer 220 covers the upper surface 210a and the sidewall 210c of the LED chip 210 and extends toward the periphery of the chip to expose a portion of the bottom surface 222. The bottom surface 222 is separated from the first and second electrodes of the LED chip from the far lower surface. The surface is flush. The material of the encapsulating material layer 220 may be silica gel, and the phosphor may be directly added to obtain white light. In order to increase the light extraction efficiency, the thickness of the encapsulating material layer 220 may be increased, and in the present embodiment, it may be 250 to 2000 μm.

The solder electrode layer 240 directly covers the surface of the first electrode and the second electrode of the LED chip 210 and the exposed bottom surface 222 of the encapsulating material layer, and the material may be solder paste. The solder electrode layer 240 and the insulating layer 230 constitute a flattened surface. Referring to FIG. 5, the solder electrode layer 240 and the insulating layer completely cover the lower surface of the LED device 200.

In this embodiment, after the insulating layer is added between the first electrode and the second electrode of the LED chip, a solder electrode layer is formed, so that the subsequent LED device can be directly pressed on the heated circuit board without applying solder paste. The bulk reflow soldering apparatus can be omitted, and the mounting method and mounting structure will be described below with reference to FIGS. 6-7.

Referring to FIG. 6, a circuit board 260 is provided having at least a substrate 261 and a circuit layer 262. The LED device 200 is discharged onto the circuit board, and the circuit board 260 is heated to bond and press down the LED device 200 to form a solder electrode layer. 240 is cured to connect the circuit board. When the circuit board is heated, the heating temperature and the heating time are preset, and the temperature is raised to the preset temperature for heating at a time, and the heating is turned off after the preset time is reached. Its installation structure is shown in Figure 7.

Figure 8 shows a second preferred embodiment of the present invention.

Referring to FIG. 8, the difference between this embodiment and Embodiment 1 is mainly in the first and second electrodes of the LED chip. The bottom surface 322 of the portion of the lower surface and the encapsulating material layer is coated with an insulating reflective layer, preferably a highly reflective white lacquer, which simultaneously serves as a solder resist. The method for fabricating the LED device will be described in detail below with reference to FIGS. 9 to 14.

First, referring to FIG. 9, an LED chip 310 is provided having opposite upper and lower surfaces and side walls connecting the upper and lower surfaces, wherein the lower surface is provided with a first electrode and a first space separated by a gap. The LED chip 310 is arranged on a temporary carrier 360, and the first surface of the LED chip 310 faces upward, wherein the temporary carrier 350 can adopt an adhesive film. A series of chips 310 can generally be arranged in the temporary carrier 350. In Figures 9-14, only two LED chips are shown for simplicity of the drawing.

Referring to FIG. 10, a layer of silica gel is coated on the first surface of the LED chip as a layer 320 of encapsulating material, and a phosphor can be incorporated into the silica gel.

Referring to Figure 11, the temporary carrier 360 is removed, at which point the second surface of the LED chip and a portion of the bottom surface of the encapsulating material layer 320 are exposed, and the entire sample is flipped so that the

electrodes

312, 314 of the LED chip face upward.

Referring to FIG. 12, an insulating layer 330 is formed on the second surface of the LED chip by using a screen printing method. The insulating layer 330 fills a gap between the first and second electrodes and extends toward the first electrode and the second electrode. Covering portions of the

surfaces

312a and 314a adjacent to the gap, the thickness is greater than the thickness of the first and second electrodes.

Referring to FIG. 13, the surface of the bottom surface 322 of the encapsulating material layer 320 and the first and

second electrode portions

312b, 314b and the insulating layer 330 of the LED chip are covered with a high-reflection paint as a screen printing method. The insulating reflective layer 350, the

partial surfaces

312c, 314c that reserve the first electrode and the second electrode are exposed for electrical connection.

Referring to FIG. 14, a solder electrode layer 340 is formed on the

surfaces

312c and 314c reserved for the first and second electrodes of the LED chip by screen printing, and the solder electrode layer 330 simultaneously covers the bottom surface 322 of the encapsulating material layer 320. So far, the surface of the entire sample away from the light-emitting surface is a flat surface.

Finally, the sample is cut to form a series of LED devices. When the LED device is mounted in a circuit board, the solder electrode layer 340 is directly used for connection.

In this embodiment, the high-reflection paint is coated around the chip electrode and the bottom of the encapsulating material layer to strengthen the mechanical strength between the chip and the encapsulating material layer, and at the same time increase the brightness reflection effect and the solder electrode layer to adhere the yield.

15 to 18 show another fabrication method of the LED device shown in Fig. 8, which is fabricated using a wafer level. Description will be made below with reference to the drawings.

Referring to FIG. 15, an LED epitaxial wafer 400 is provided. The LED epitaxial wafer 400 has a growth substrate 401 and a light-emitting epitaxial layer 402 formed on the growth substrate, wherein the growth substrate side surface 400a is a first surface. Far One side surface 400b from the growth substrate is a second surface.

Referring to FIG. 16, the light-emitting epitaxial stack 402 of the LED epitaxial wafer 400 is unitized, and the first and second electrodes are formed on the second surface 400b to form a series of LED chip units 410, wherein the first and second electrodes There is a gap between them.

Referring to FIG. 17, a temporary carrier 460 is provided. The previously processed LED epitaxial wafer is bonded to the temporary carrier 460 with the first surface 400a facing upward, and the growth substrate 401 of the LED epitaxial wafer is removed to expose the luminescent epitaxial stack. The surface of 402 is coated with a layer of silicone as the encapsulating material layer 420.

Referring to FIG. 18, the temporary carrier 460 is removed, and the LED epitaxial wafer is flipped so that the first and second electrodes face upward, and the insulating layer, the insulating reflective layer and the solder electrode layer are subsequently formed in the manner shown in FIGS. 12-14. And cutting to form a series of LED devices.

Fig. 19 shows a third preferred embodiment of the present invention.

Referring to FIG. 19, the main difference between this embodiment and Embodiment 1 is that the encapsulating material layer 520 covers only the upper surface of the LED chip 520. The present embodiment will be described in detail below with reference to FIGS. 20 to 24 and a manufacturing method.

Referring to FIG. 20, an LED epitaxial wafer is provided having a growth substrate 501 and a light-emitting epitaxial laminate 502 formed on the growth substrate, wherein the growth substrate side surface 500a is a first surface, away from One side surface 500b of the growth substrate is a second surface.

Referring to Figure 21, a layer of encapsulating material 520 is formed on the second surface 500b of the LED epitaxial wafer.

Referring to FIG. 22, the growth substrate 501 is removed, the epitaxial wafer 502 of the epitaxial wafer is unitized, and the first and second electrodes are formed on the first surface 500a to form a series of LED chip units, first and second. There is a gap between the electrodes.

Referring to FIG. 23, an insulating layer 530 is formed on the first surface 500a of the LED epitaxial wafer by using a screen printing method, which fills a gap between the first and second electrodes, and is directed to the first electrode and the second electrode. The electrode extends over a portion of the surface adjacent the gap, the thickness being greater than the thickness of the first and second electrodes.

Referring to Figure 24, a solder electrode layer 540 is formed on the first and second electrodes of the LED chip unit by screen printing, which forms a flat surface with the insulating layer 530.

Finally, the cutting is performed to form a series of LED devices 500. When the LED device 500 is mounted in the circuit board, the solder electrode layer 540 can be directly used for connection.

In this embodiment, the wafer level is used for fabrication, which simplifies the process and effectively reduces the size of the device.

Claims

LED devices, including:

An LED chip having opposite upper and lower surfaces and sidewalls connecting the upper and lower surfaces, wherein the lower surface is provided with a first electrode and a first electrode, and the first electrode and the second electrode have a gap to achieve electrical isolation between the two electrodes;

a layer of encapsulating material covering the upper surface of the LED chip for protecting and supporting the LED chip; an insulating layer filling the gap and extending to the first electrode and the second electrode to cover a portion of the surface close to the gap Above, the thickness thereof is greater than the thickness of the first and second electrodes;

The solder electrode layer covers the first and second electrodes of the LED chip and is flush with the insulating layer. When the LED device is mounted on the circuit board, the solder electrode layer is connected.
The light emitting diode device according to claim 1, wherein a gap between the first and second electrodes of the LED chip is 100 μm to 200 μm.
The LED device of claim 1 , wherein the first and second electrodes of the LED chip respectively have two ends, wherein the first end of the LED chip contacts the lower surface, and the second end In contact with the solder electrode layer, the second end of the first electrode is flush with the second end of the second electrode.
The light emitting diode device according to claim 1, wherein the projection of the first and second electrodes and the insulating layer on the LED chip occupies the lower surface of the entire chip.
The light emitting diode device according to claim 1, wherein the insulating layer has a width of from 250 μm to 600 μm.
The LED device of claim 1 , wherein the insulating layer covers the first and second electrodes of the LED chip, and the area of the first and second electrodes is 10% to 60% of the surface of the first and second electrodes. .
The light emitting diode device according to claim 1, wherein said insulating layer is a solder resist material.
The light emitting diode device according to claim 1, wherein said insulating layer is a highly reflective insulating material.
A light emitting diode device according to claim 1, wherein said layer of encapsulating material further covers a sidewall of said LED chip, and extends to a periphery of said chip to expose a portion of a bottom surface, said bottom surface and said LED chip The first and second electrodes are flush with an end surface of the lower surface of the far LED chip.
The light emitting diode device according to claim 9, wherein said solder electrode layer further covers an exposed bottom surface of said encapsulating material layer.
The light emitting diode device according to claim 9, further comprising an insulating reflective layer covering a bottom surface of said encapsulating material layer and a portion of said first and second electrodes of said LED chip, said solder The electrode layer covers the insulating reflection.
The light emitting diode device according to claim 1, wherein the thickness of the encapsulating material layer is from 250 μm to 2000 μm.
The light emitting diode device according to claim 1, wherein said solder electrode layer and said insulating layer constitute a flattened surface which completely covers a lower surface of said LED chip.
The manufacturing method of the LED device comprises the steps of:

Providing an LED chip having opposite upper and lower surfaces and sidewalls connecting the upper and lower surfaces, wherein the lower surface is provided with a first electrode and a first electrode, between the first electrode and the second electrode Having a gap to achieve electrical isolation between the two electrodes;

Arranging the LED chips on a temporary carrier, the upper surface of the LED chip facing upward;

Forming a layer of encapsulation material on the upper surface of the LED chip for protecting and supporting the LED chip;

Removing the temporary carrier and flipping the device such that the first and second electrodes of the LED chip face upward;

Forming an insulating layer on the lower surface of the LED chip by using a screen printing method, filling a gap between the first and second electrodes, and extending the first electrode and the second electrode to cover the gap a portion of the surface having a thickness greater than a thickness of the first and second electrodes;

Forming a solder electrode layer on the first and second electrodes of the LED chip by using a screen printing method, which is flush with the insulating layer to form a light emitting diode device, and when the light emitting diode device is mounted on the circuit board, The solder electrode layers are connected.
A method of fabricating a light emitting diode device according to claim 14, wherein said solder is formed Before the pole layer, an insulating reflective layer is formed to cover the bottom surface of the encapsulating material layer and a portion of the first and second electrodes of the LED chip.
The method of fabricating a light emitting diode device according to claim 14, wherein the temporary carrier is an adhesive film.
The manufacturing method of the LED device comprises the steps of:

Providing an LED epitaxial wafer having a growth substrate and a light-emitting epitaxial stack formed on the growth substrate, the surface of the growth substrate being defined as a first surface, away from a side surface of the growth substrate Is the second surface;

Forming a light-emitting epitaxial stack of the epitaxial wafer, and forming first and second electrodes on the second surface to form a series of LED chip units, wherein the first and second electrodes have a gap therebetween;

Providing a temporary carrier for bonding the processed LED epitaxial wafer to the temporary carrier, the first surface facing upward;

Removing the growth substrate of the LED epitaxial wafer;

Coating a layer of encapsulating material on the first surface of the LED epitaxial wafer;

Removing the temporary carrier and flipping the LED epitaxial wafer such that the first and second electrodes face upward;

Forming an insulating layer on the second surface of the LED epitaxial wafer by using a screen printing method, filling a gap between the first and second electrodes, and extending the first electrode and the second electrode to cover the gap a portion of the surface near the gap having a thickness greater than a thickness of the first and second electrodes;

Forming a solder electrode layer on the first and second electrodes of the LED chip by screen printing, which is flush with the insulating layer;

The LED epitaxial wafer is singulated to form a light emitting diode device, and when the light emitting diode device is mounted in a circuit board, the solder electrode layer is connected.
The manufacturing method of the LED device comprises the steps of:

Providing an LED epitaxial wafer having a growth substrate and a light-emitting epitaxial stack formed on the growth substrate, the surface of the growth substrate being defined as a first surface, away from a side surface of the growth substrate Is the second surface;

Forming a layer of encapsulation material on the second surface of the LED epitaxial wafer;

Removing the growth substrate, unitizing the light-emitting epitaxial stack of the epitaxial wafer, and fabricating the first surface a second electrode forming a series of LED chip units, wherein the first and second electrodes have a gap therebetween;

Forming an insulating layer on the first surface of the LED epitaxial wafer by using a screen printing method, filling a gap between the first and second electrodes, and extending the first electrode and the second electrode to cover the gap a portion of the surface near the gap having a thickness greater than a thickness of the first and second electrodes;

Forming a solder electrode layer on the first and second electrodes of the LED chip by screen printing, which is flush with the insulating layer;

The LED epitaxial wafer is singulated to form a light emitting diode device, and when the light emitting diode device is mounted in a circuit board, the solder electrode layer is connected.
A mounting structure of a light emitting diode device comprising the light emitting diode device according to any one of claims 1 to 14 and a circuit board, the light emitting diode device being connected to the electrode plate by the solder electrode layer.
A method of installing a light emitting diode device, comprising the steps of:

Providing a circuit board;

Ejecting the light emitting diode device of any one of claims 1 to 14 on the circuit board, wherein the solder electrode layer is in contact with the circuit board,

The circuit board is heated to melt and solidify the solder electrode layer to connect the circuit board.
The method for mounting a light emitting diode device according to claim 20, wherein the heating temperature and the heating time are preset, and heating is performed at the preset temperature when the circuit board is heated, and the heating is performed after the preset time is reached. Disconnect heating.