WO2016015594A1 - 一种高精度高可靠快速响应热敏芯片及其制作方法 - Google Patents

一种高精度高可靠快速响应热敏芯片及其制作方法 Download PDF

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WO2016015594A1
WO2016015594A1 PCT/CN2015/084974 CN2015084974W WO2016015594A1 WO 2016015594 A1 WO2016015594 A1 WO 2016015594A1 CN 2015084974 W CN2015084974 W CN 2015084974W WO 2016015594 A1 WO2016015594 A1 WO 2016015594A1
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ceramic substrate
semiconductor ceramic
glass protective
protective layer
heat
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PCT/CN2015/084974
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English (en)
French (fr)
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陈文廷
段兆祥
杨俊�
柏琪星
唐黎民
叶建开
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肇庆爱晟电子科技有限公司
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Priority to US15/328,993 priority Critical patent/US10330539B2/en
Publication of WO2016015594A1 publication Critical patent/WO2016015594A1/zh

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • G01K7/16—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C1/00—Details
    • H01C1/02—Housing; Enclosing; Embedding; Filling the housing or enclosure
    • H01C1/022—Housing; Enclosing; Embedding; Filling the housing or enclosure the housing or enclosure being openable or separable from the resistive element
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C1/00—Details
    • H01C1/14—Terminals or tapping points or electrodes specially adapted for resistors; Arrangements of terminals or tapping points or electrodes on resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C13/00—Resistors not provided for elsewhere
    • H01C13/02—Structural combinations of resistors

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  • the invention belongs to the technical field of thermal chip products, and particularly relates to a high precision, high reliability and fast response thermal chip and a manufacturing method thereof.
  • Thermal chip as an electronic component has unparalleled advantages: easy to install, high efficiency, no lead - no parasitic inductance, electrode in epoxy or glass encapsulation - higher reliability.
  • the thermal chip as a core component, the thermistor and temperature sensor in different package forms are widely used in various temperature detection, temperature compensation, temperature control circuits, which convert the temperature variables into the required electrons in the circuit.
  • the core role of the signal is widely used in various temperature detection, temperature compensation, temperature control circuits, which convert the temperature variables into the required electrons in the circuit.
  • thermal chips Due to the wide application of thermal chips, in order to meet the demand for rapid experience of electronic technology, this requires high precision, high reliability and fast response of the thermal chip.
  • the manufacturing method of the thermal chip is: heat-sensitive semiconductor ceramic substrate preparation - printing metal electrode layer - dicing - thermal chip, the thermal chip produced by the method has the following deficiencies:
  • the thermal chip with the current solderable CP line and the enameled wire or the thermal chip capable of testing the resistance has a response time of more than 2 seconds, and the response takes a long time;
  • the object of the present invention is to overcome the deficiencies of the prior art, and specifically to disclose a high-precision, high-reliability, fast-response thermal chip capable of achieving fast response, accurate resistance precision control, high precision, and a glass protective layer thereof.
  • the protection makes the thermal chip highly reliable.
  • a high-precision, high-reliability, fast-response thermal chip comprises a heat-sensitive semiconductor ceramic substrate, and the surface of the heat-sensitive semiconductor ceramic substrate is sprayed and sintered with a glass protective layer on both surfaces. Both surfaces of the semiconductive ceramic substrate having a glass protective layer are printed with a metal electrode layer.
  • the glass protective layers are spaced apart, and the heat-sensitive semiconductor ceramic substrate has two tables.
  • the surface of the glass protective layer corresponds to the setting.
  • the metal electrode layer is a gold electrode or a silver electrode.
  • the invention also discloses a method for manufacturing a high precision, high reliability and fast response thermal chip, the specific steps of which are:
  • Spraying glass protective layer spraying the glass frit liquid corresponding to both surfaces of the above-mentioned heat-sensitive semiconductor ceramic substrate to form a glass protective layer which is spaced on each surface of the heat-sensitive semiconductor ceramic substrate Setting
  • the step (2) spraying the glass protective layer comprises:
  • thermosensitive semiconductor ceramic substrate assembling the thermosensitive semiconductor ceramic substrate to the separator so that the area where the glass is not required to be sprayed is separated by the separator;
  • the sintered glass protective layer according to the above step (3) is specifically: removing the separator, and sintering the sprayed thermosensitive semiconductor ceramic substrate at a certain temperature to make the glass powder The melting causes the glass to be tightly bonded to the heat-sensitive semiconductor ceramic substrate.
  • the glass protective layer has a sintering temperature in the range of 600 to 650 °C.
  • the printed metal electrode layer described in the above step (4) comprises the following steps:
  • (4a) printing metal paste uniformly printing the metal paste on the upper and lower surfaces of the heat-sensitive semiconductor ceramic substrate with a glass protective layer by using a printing device;
  • Sintered metal electrode layer sintering is performed at a certain temperature to closely bond the metal electrode layer with the glass protective layer and the heat-sensitive semiconductor ceramic layer, and the sintering temperature of the metal electrode layer is 950 to 1100 °C.
  • the present invention is provided with a spacer glass protective layer on the surface of the heat-sensitive semiconductor ceramic substrate, and the spaced-apart glass protective layer separates the surface of the heat-sensitive substrate into a non-conductive region having a glass protective layer and The conductive area of the glass protective layer, so that when the thermal chip is operated, when the thermal chip is energized, the current rapidly flows through the conductive area, reducing the flow of non-conductive areas (ie, reducing current flow throughout the chip), and only the conductive area of the thermal chip When the ambient temperature is sensed, the thermal chip quickly reflects the resistance;
  • the thermal chip of the invention can effectively avoid the size of the thermal chip being cut, and the resistance error is larger, increasing the size of the thermal chip, and also facilitating the use of the device to test the resistance value, thereby effectively improving the resistance precision. ;
  • the heat-sensitive chip of the present invention can effectively protect the heat-sensitive semiconductor ceramic body and improve the reliability of the heat-sensitive chip because of the glass protective layer.
  • FIG. 1 is a perspective view of a heat sensitive chip according to the present invention.
  • Figure 2 is a side cross-sectional view of the thermal chip of the present invention.
  • 3A to 3F are schematic views showing the structure of a thermal chip manufacturing process according to the present invention.
  • a high-precision, high-reliability, fast-response thermal chip 10 includes a thermosensitive semiconductor ceramic substrate 1 which is spaced apart on both surfaces of the thermosensitive semiconductor ceramic substrate 1.
  • a glass protective layer 2 is sprayed and sintered, and metal electrode layers 3 are printed on both surfaces of the semiconductor ceramic substrate 1 with the glass protective layer 2, and the glass protective layers 2 are spaced apart and strip-shaped, the heat
  • the glass protective layer 2 on both surfaces of the semiconductor ceramic substrate 1 is disposed correspondingly, and the metal electrode layer 3 is a gold electrode or a silver electrode layer.
  • the invention also discloses a method for manufacturing a high precision, high reliability and fast response thermal chip, the specific steps of which are:
  • Fabrication of heat-sensitive semiconductor ceramic substrate 1 This step can be made by using the traditional semiconductor ceramic process in the industry to produce a heat-sensitive semiconductor ceramic substrate.
  • the general process of the conventional semiconductor ceramic process batching-powder-isostatic powder-sintering a dense semiconductor ceramic block - a semiconductor ceramic block - a heat-sensitive semiconductor ceramic substrate 1 (as shown in FIG. 3A);
  • thermosensitive semiconductor ceramic substrate 1 both surfaces of the above-mentioned thermosensitive semiconductor ceramic substrate 1 are formed with a glass protective layer 2 which is spaced apart on each surface of the heat-sensitive semiconductor ceramic substrate 1 to thereby heat-sensitive semiconductor ceramic substrate
  • a glass protective layer 2 which is spaced apart on each surface of the heat-sensitive semiconductor ceramic substrate 1 to thereby heat-sensitive semiconductor ceramic substrate
  • Each surface of the sheet 1 corresponds to a non-conductive region separated by a glass protective layer 2 and a conductive region without a glass protective layer;
  • Printing metal electrode layer 3 as shown in FIG. 3D, a metal paste is printed on both surfaces of the heat-sensitive semiconductor ceramic substrate 1 having the glass protective layer 2 and sintered into a metal electrode layer 3.
  • the specific step is (4a) Printing metal paste: adopted The printing device uniformly prints the metal paste on the upper and lower surfaces of the heat-sensitive semiconductor ceramic substrate 1 with the glass protective layer 2;
  • (4b) sintered metal electrode layer 3 sintering is performed at a certain temperature to closely bond the metal electrode layer 3 with the ceramic protective layer 2, the ceramic layer of the heat-sensitive semiconductor ceramic substrate 1, and the sintering temperature of the metal electrode layer 3 It is 950 to 1100 °C.
  • a heat-sensitive chip is manufactured.
  • the structure of the heat-sensitive chip 10 is as shown in Fig. 3F.
  • the metal electrode layer 3 and the glass protective layer 2 are both kept on both sides of the heat-sensitive semiconductor ceramic substrate 1 at the time of dicing.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Thermistors And Varistors (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)

Abstract

一种高精度高可靠快速响应热敏芯片及其制作方法，属于热敏芯片产品技术领域，该高精度高可靠快速响应热敏芯片包括热敏半导体陶瓷基片（1），所述热敏半导体陶瓷基片（1）的两表面上间隔的喷涂并烧结有玻璃保护层（2），在该带有玻璃保护层（2）的半导体陶瓷基片（1）的两表面印刷有金属电极层（3）。该热敏芯片能实现快速响应，阻值精度能精确控制，精度高，同时其玻璃保护层的保护性，使得热敏芯片具有高可靠性。

Description

一种高精度高可靠快速响应热敏芯片及其制作方法 技术领域
本发明属于热敏芯片产品技术领域，特别涉及一种高精度高可靠快速响应热敏芯片及其制作方法。
背景技术
随着电子技术的发展，电子元器件将会向着高精度、高可靠、快速响应、微型化的方向发展。SMT技术日益要求电子元器件的表面贴装化。热敏芯片作为电子元器件具有不可比拟的优越性：安装方便效率极高、无引线－无寄生电感、电极在环氧或玻璃封装层内－可靠性更高。
热敏芯片作为核心部件，采取不同封装形式构成的热敏电阻和温度传感器广泛应用于各种温度探测、温度补偿、温度控制电路，其在电路中起到将温度的变量转化成所需的电子信号的核心作用。
由于热敏芯片的广泛应用，为满足人们对电子技术快速体验的需求，这就要求热敏芯片高精度、高可靠、快速响应。
现有技术中，热敏芯片的制作方法是：热敏半导体陶瓷基片制备―印刷金属电极层―划片―热敏芯片，该方法制作而成的热敏芯片存在如下不足之处：
(1)工作时响应不够快：现有可焊接CP线和漆包线的热敏芯片或可测试阻值的热敏芯片其响应时间2秒以上，响应所需时间长；
(2)阻值精度难以控制：用半导体划切工艺划切热敏芯片，划切尺寸越小时，阻值误差越大，即阻值精度难以控制，而且尺寸越小越难以测试热敏芯片阻值。
发明内容
本发明的目的是克服现有技术的不足，具体公开一种高精度高可靠快速响应热敏芯片，该热敏芯片能实现快速响应，阻值精度能精确控制，精度高，同时其玻璃保护层的保护性，使得热敏芯片具有高可靠性。
为了克服上述技术目的，本发明是按以下技术方案实现的：
本发明所述的一种高精度高可靠快速响应热敏芯片，包括热敏半导体陶瓷基片，所述热敏半导体陶瓷基片的两表面上间隔的喷涂并烧结有玻璃保护层，在该带有玻璃保护层的半导体陶瓷基片的两表面印刷有金属电极层。
作为上述技术的进一步改进，所述玻璃保护层间隔设置，所述热敏半导体陶瓷基片两表 面的玻璃保护层对应设置。
在本发明中，所述金属电极层为金电极或银电极。
本发明还公开了一种高精度高可靠快速响应热敏芯片的制作方法，其具体步骤是：
(1)制作热敏半导体陶瓷基片；
(2)喷涂玻璃保护层：在上述热敏半导体陶瓷基片的两表面对应的喷涂玻璃粉液以形成玻璃保护层，所述玻璃保护层在热敏半导体陶瓷基片的每一表面均为间隔设置；
(3)烧结玻璃保护层：将上述喷涂有玻璃保护层的热敏半导体陶瓷基片进行烧结：
(4)印刷金属电极层：在上述有玻璃保护层的热敏半导体陶瓷基片的两表面印刷金属浆料并烧结成金属电极层；
(5)划片：按照规定的尺寸规格将上述带有玻璃保护层和金属电极层的热敏半导体陶瓷基片划切成方片状；
(6)制得热敏芯片。
作为上述制作方法的进一步改进，上述步骤(2)喷涂玻璃保护层包括：
(2a)装配：将热敏半导体陶瓷基片装配到隔板上，使不需要喷涂玻璃的区域通过隔板隔离开；
(2b)喷涂玻璃：用喷头将调配好的玻璃粉液均匀喷涂在装配好的热敏半导体陶瓷基片上下两表面。
作为上述制作方法的更进一步改进，上述步骤(3)所述的烧结玻璃保护层具体是：取下隔板，将喷涂好的热敏半导体陶瓷基片在一定的温度下进行烧结，使玻璃粉融化，使得玻璃与热敏半导体陶瓷基片紧密结合，具体来说，所述玻璃保护层的烧结温度范围是600～650℃。
作为上述制作方法的更进一步改进，上述步骤(4)所述的印刷金属电极层包括以下步骤：
(4a)印刷金属浆料：采用印刷设备将金属浆料均匀印刷在带有玻璃保护层的热敏半导体陶瓷基片上下两表面；
(4b)烧结金属电极层：在一定的温度下进行烧结，使金属电极层与玻璃保护层、热敏半导体陶瓷层紧密结合，所述金属电极层的烧结温度是950～1100℃。
与现有技术相比，本发明的有益效果是：
(1)快速响应：本发明由于在热敏半导体陶瓷基片的表面设有间隔的玻璃保护层，间隔设置的玻璃保护层将热敏基片表面分隔成有玻璃保护层的非导电区和没有玻璃保护层的导电区，从而使得热敏芯片工作时，当热敏芯片通电时，电流快速流通导电区，减少流通非导电区(即减少电流流通整个芯片)，同时只要热敏芯片的导电区感应到环境温度，热敏芯片就快速体现阻值了；
(2)高精度：本发明的热敏芯片可以有效避免热敏芯片尺寸划切越小时其阻值误差越大，增加热敏芯片尺寸，也便于采用设备测试阻值，从而有效提高阻值精度；
(3)高可靠：本发明所述的热敏芯片，由于有玻璃保护层，可以对热敏半导体陶瓷体起到有效防护，提高热敏芯片可靠性。
附图说明
下面结合附图和具体实施例对本发明做详细的说明：
图1是本发明所述的热敏芯片立体示意图；
图2本发明所述的热敏芯片侧面剖视图；
图3A至3F是本发明所述的热敏芯片制作过程结构示意图。
具体实施方式
如图1、图2所示，本发明所述的一种高精度高可靠快速响应热敏芯片10，包括热敏半导体陶瓷基片1，所述热敏半导体陶瓷基片1的两表面上间隔的喷涂并烧结有玻璃保护层2，在该带有玻璃保护层2的半导体陶瓷基片1的两表面印刷有金属电极层3，所述玻璃保护层2间隔设置且成条状，所述热敏半导体陶瓷基片1两表面的玻璃保护层2对应设置，所述金属电极层3为金电极或银电极层。
本发明还公开了一种高精度高可靠快速响应热敏芯片的制作方法，其具体步骤是：
(1)制作热敏半导体陶瓷基片1：该步骤可采用行业内传统半导体陶瓷工艺制作热敏半导体陶瓷基片，传统的半导体陶瓷工艺一般流程：配料―粉料―等静压粉料―烧结成致密的半导体陶瓷块―切割半导体陶瓷块―热敏半导体陶瓷基片1(如图3A所示)；
(2)喷涂玻璃保护层：如图3B所示，(2a)装配：将热敏半导体陶瓷基片1装配到隔板20上，使不需要喷涂玻璃的区域通过隔板20隔离开；
(2b)喷涂玻璃：用喷头30将调配好的玻璃粉液40均匀喷涂在装配好的热敏半导体陶瓷基片1的上下两表面。
这样就使得上述热敏半导体陶瓷基片1的两表面形成玻璃保护层2，所述玻璃保护层2在热敏半导体陶瓷基片1的每一表面均为间隔设置，从而将热敏半导体陶瓷基片1的每个表面对应分隔成有玻璃保护层2的非导电区和无玻璃保护层的导电区；
(3)烧结玻璃保护层2：取下隔板20后，如图3C所示，将喷涂好的热敏半导体陶瓷基片1在600～650℃的温度下进行烧结，使玻璃粉融化，使得玻璃与热敏半导体陶瓷基片1紧密结合。
(4)印刷金属电极层3：如图3D所示，在上述有玻璃保护层2的热敏半导体陶瓷基片1的两表面印刷金属浆料并烧结成金属电极层3，其具体步骤是，(4a)印刷金属浆料：采用 印刷设备将金属浆料均匀印刷在带有玻璃保护层2的热敏半导体陶瓷基片1的上下两表面；
(4b)烧结金属电极层3：在一定的温度下进行烧结，使金属电极层3与玻璃保护层2、热敏半导体陶瓷基片1的陶瓷层紧密结合，所述金属电极层3的烧结温度是950～1100℃。
(5)划片：如图3E所示，按照规定的尺寸规格将上述带有玻璃保护层和金属电极层的热敏半导体陶瓷基片划切成方片状；
(6)制得热敏芯片，热敏芯片10的结构要求如图3F所示，划片时保留金属电极层3和玻璃保护层2均同时在热敏半导体陶瓷基片1的两面。
本发明并不局限于上述实施方式，凡是对本发明的各种改动或变型不脱离本发明的精神和范围，倘若这些改动和变型属于本发明的权利要求和等同技术范围之内，则本发明也意味着包含这些改动和变型。

Claims (9)

  1. 一种高精度高可靠快速响应热敏芯片，包括热敏半导体陶瓷基片，其特征在于：所述热敏半导体陶瓷基片的两表面上间隔的喷涂并烧结有玻璃保护层，在该带有玻璃保护层的半导体陶瓷基片的两表面印刷有金属电极层。
  2. 根据权利要求1所述的高精度高可靠快速响应热敏芯片，其特征在于：所述玻璃保护层间隔设置，所述热敏半导体陶瓷基片两表面的玻璃保护层对应设置。
  3. 根据权利要求1或2所述的高精度高可靠快速响应热敏芯片，其特征在于：所述金属电极层为金电极或银电极。
  4. 根据权利要求1至3任一项所述的高精度高可靠快速响应热敏芯片的制作方法，其具体步骤是：
    (1)制作热敏半导体陶瓷基片；
    (2)喷涂玻璃保护层：在上述热敏半导体陶瓷基片的两表面对应的喷涂玻璃粉液以形成玻璃保护层，所述玻璃保护层在热敏半导体陶瓷基片的每一表面均为间隔设置；
    (3)烧结玻璃保护层：将上述喷涂有玻璃保护层的热敏半导体陶瓷基片进行烧结：
    (4)印刷金属电极层：在上述有玻璃保护层的热敏半导体陶瓷基片的两表面印刷金属浆料并烧结成金属电极层；
    (5)划片：按照规定的尺寸规格将上述带有玻璃保护层和金属电极层的热敏半导体陶瓷基片划切成方片状；
    (6)制得热敏芯片。
  5. 根据权利要求4所述的高精度高可靠快速响应热敏芯片的制作方法，其特征在于：
    上述步骤(2)喷涂玻璃保护层包括：
    (2a)装配：将热敏半导体陶瓷基片装配到隔板上，使不需要喷涂玻璃的区域通过隔板隔离开；
    (2b)喷涂玻璃：用喷头将调配好的玻璃粉液均匀喷涂在装配好的热敏半导体陶瓷基片上下两表面。
  6. 根据权利要求4所述的高精度高可靠快速响应热敏芯片的制作方法，其特征在于：上述步骤(3)所述的烧结玻璃保护层具体是：取下隔板，将喷涂好的热敏半导体陶瓷基片在一定的温度下进行烧结，使玻璃粉融化，使得玻璃与热敏半导体陶瓷基片紧密结合。
  7. 根据权利要求6所述的高精度高可靠快速响应热敏芯片的制作方法，其特征在于：所述玻璃保护层的烧结温度范围是600～650℃。
  8. 根据权利要求4所述的高精度高可靠快速响应热敏芯片的制作方法，其特征在于：上述步骤(4)所述的印刷金属电极层包括以下步骤：
    (4a)印刷金属浆料：采用印刷设备将金属浆料均匀印刷在带有玻璃保护层的热敏半导体陶瓷基片上下两表面；
    (4b)烧结金属电极层：在一定的温度下进行烧结，使金属电极层与玻璃保护层、热敏半导体陶瓷层紧密结合。
  9. 根据权利要求8所述的高精度高可靠快速响应热敏芯片的制作方法，其特征在于：所述金属电极层的烧结温度是950～1100℃。
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