WO2016011606A1 - Procédé de fabrication pour source de lumière à diode électroluminescente (del) et procédé de fabrication par lots - Google Patents

Procédé de fabrication pour source de lumière à diode électroluminescente (del) et procédé de fabrication par lots Download PDF

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Publication number
WO2016011606A1
WO2016011606A1 PCT/CN2014/082778 CN2014082778W WO2016011606A1 WO 2016011606 A1 WO2016011606 A1 WO 2016011606A1 CN 2014082778 W CN2014082778 W CN 2014082778W WO 2016011606 A1 WO2016011606 A1 WO 2016011606A1
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WIPO (PCT)
Prior art keywords
connection
light
connection end
type semiconductor
epitaxial structure
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Application number
PCT/CN2014/082778
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English (en)
Chinese (zh)
Inventor
杜鹏
Original Assignee
深圳市国源铭光电科技有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
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Application filed by 深圳市国源铭光电科技有限公司 filed Critical 深圳市国源铭光电科技有限公司
Priority to CN201480076773.6A priority Critical patent/CN106463575A/zh
Priority to PCT/CN2014/082778 priority patent/WO2016011606A1/fr
Publication of WO2016011606A1 publication Critical patent/WO2016011606A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen

Definitions

  • the present invention relates to the field of LED technology, and in particular, to a method for fabricating an LED light source and a method for mass production.
  • the LED package generally adopts the following processes: an epitaxial layer is formed on the substrate by chemical deposition, an electrode is arranged on the epitaxial layer, an LED chip is obtained, and the LED chip is fixed on the substrate by flip-chip or formal mounting, and is mounted on the substrate.
  • a cup-shaped bracket is fixed on the upper surface, and the electrode of the LED chip is connected with the related circuit by a gold wire, and the glass-shaped bracket is injected into the cup-shaped bracket, and a hemispherical encapsulation layer is formed on the surface of the lED chip by the cup-shaped bracket.
  • This packaging process is cumbersome because the first one needs to be mounted on the substrate by means of a substrate and needs to be flip-chip or mounted. Second, the gold wire needs to be connected, and the third is required to be supported by the bracket. Therefore, the existing process is cumbersome, costly, and inefficient.
  • the invention provides a method for manufacturing an LED light source and a method for mass production, which solves the problems of cumbersome, high cost and low efficiency of the existing LED packaging process.
  • the present invention adopts the following technical solutions:
  • a method for manufacturing an LED light source comprising:
  • An epitaxial structure is formed on the substrate in such a manner that the epitaxial structure comprises a single luminescent epitaxial layer structure or at least two electrically connected luminescent epitaxial layer structures having at least one end N-type semiconductor layer and at least one End P-type semiconductor layer;
  • first connection unit including a first connection end and a second connection end, and a second connection unit including a third connection end and a fourth connection end, as follows, resulting in including the substrate, the epitaxial structure, the first connection unit, and a light emitting unit of the second connecting unit: the first connecting end is disposed on the epitaxial structure and electrically connected to each of the end N-type semiconductor layers, and the second connecting end extends beyond the epitaxial structure and Connecting the first connection end to an external circuit; the third connection end is disposed on the epitaxial structure and electrically connected to each of the end P-type semiconductor layers, and the fourth connection end extends out of the Outside the epitaxial structure and connecting the third connection terminal to the external circuit;
  • sealing a part or an entire area of the light-emitting unit except the connection area of the second connection end, the fourth connection end and the external circuit, and the sealing area includes at least The main light-emitting area of the light-emitting unit is encapsulated to obtain an LED light source including the light-emitting unit and an encapsulation layer formed on the light-emitting unit.
  • the luminescent epitaxial layer structure comprises at least an N-type semiconductor layer, a light-emitting layer and a P-type semiconductor layer from a near to far distance from the substrate; or at least: N from the near to the far side of the substrate a semiconductor layer, a light emitting layer, a P-type semiconductor layer, and a metal reflective layer; or at least: an N-type semiconductor layer from the near to far side of the substrate, a light-emitting layer, and a P-type semiconductor layer having a reflective function.
  • the first connection end is disposed on the epitaxial structure through a metal paste and electrically connected to each of the end N-type semiconductor layers; and/or the third connection end is disposed on the epitaxial structure through a metal paste and Each of the end P-type semiconductor layers is electrically connected.
  • the second connection end and/or the fourth connection end are disposed by extending beyond the epitaxial structure to form a floating end; or extending beyond the epitaxial structure and the epitaxial structure on the substrate A region other than the occupied portion is bonded; or extends beyond the epitaxial structure and is fixed to an area on the substrate outside the portion occupied by the epitaxial structure through the intermediate structure.
  • the shape of the second connecting end and/or the fourth connecting end is one or more of a Z shape, a T shape, an L shape, a ten shape, a square shape, an elliptical shape, a circular shape, and an irregular shape.
  • the first connecting unit and/or the second connecting unit are a one-piece sheet structure.
  • the inscribed circle diameter of the connection region of the second connection end and/or the fourth connection end and the external connection circuit is 200 micrometers to 1500 micrometers.
  • the substrate is one of sapphire, silicon, glass, silicon carbide materials.
  • sealing a partial area of the light emitting unit except the connection area of the second connection end, the fourth connection end and the external circuit includes: On the main light-emitting surface of the unit, a region other than the connection region of the second connection end, the fourth connection end and the external circuit is sealed.
  • sealing a region other than the connection region of the second connection end, the fourth connection end, and the external circuit includes: at the light-emitting unit In the region other than the connection region of the second connection end, the fourth connection end and the external circuit, the main illuminating surface is continuously injected along the trajectory of the illuminating epitaxial layer structure, and is solidified to form a Siamese encapsulation layer.
  • sealing the entire area of the light emitting unit except the connection area of the second connection end, the fourth connection end and the external circuit includes:
  • the second connection end and the fourth connection are removed.
  • the area outside the connection area of the external circuit is sealed.
  • a method for mass production of an LED light source comprising:
  • each epitaxial structure comprises a single luminescent epitaxial layer structure or at least two electrically connected luminescent epitaxial layer structures, each epitaxial structure having at least one end N-type semiconductor layer and At least one end P-type semiconductor layer; and a support module attached to the other side of the substrate;
  • each of the first connecting units includes a first connecting end and a second connecting end
  • each of the second connecting units includes a third connecting end and a fourth connecting end Disposing a first connection end on the epitaxial structure and electrically connecting with each of the end N-type semiconductor layers of the epitaxial structure, the second connection end extending beyond the epitaxial structure and connecting the first connection
  • the terminal is connected to the external circuit;
  • the third connection end is disposed on the epitaxial structure and electrically connected to each of the end P-type semiconductor layers of the epitaxial structure, and the fourth connection end extends out of the epitaxial structure And connecting the third connection terminal to the external circuit; obtaining a wafer including at least two light emitting units sharing the substrate, and providing a trench between adjacent light emitting units on the substrate
  • Each of the light emitting units includes an epitaxial structure, a first connecting unit and a second connecting unit electrically connected to the epitaxial structure, and a portion of the
  • each LED light source comprises a light emitting unit, and a partial or integral region of the second connecting end and the fourth connecting end is sealed Encapsulation layer.
  • the support module is a blue film.
  • sealing a part or an entire area of each of the light-emitting units except the connection area of the second connection end, the fourth connection end and the external circuit is performed according to the following principle: Moving continuously in the illuminating unit along the aligning trajectory of the illuminating epitaxial layer structure, intermittently injecting glue between different illuminating units, and forming a plurality of conjoined encapsulating layers after curing, each of the encapsulating layers encapsulating a single illuminating unit A partial or integral area other than the connection area of the second connection end, the fourth connection end, and the external circuit.
  • sealing a partial area of each of the light emitting units except the connection area of the second connection end, the fourth connection end and the external circuit comprises: on the wafer Sealing the area on the main light-emitting surface of each of the light-emitting units except the connection area of the second connection end, the fourth connection end, and the external circuit;
  • sealing the entire area of the light-emitting unit except the connection area of the second connection end, the fourth connection end, and the external circuit includes: on the wafer, each The main light-emitting surface of the light-emitting unit and the opposite surface thereof are sealed except for the connection area of the second connection end, the fourth connection end, and the external circuit.
  • the invention provides a method for manufacturing an LED light source and a method for mass production, which utilizes a first connecting unit and a second connecting unit to extend a second connecting end and a fourth connecting end outside the epitaxial structure to connect with an external related circuit, thereby eliminating the need for The operation of the gold wire; further, after the first connection unit and the second connection unit are disposed on the epitaxial structure, and the light-emitting unit including the substrate, the epitaxial structure, the first connection unit, and the second connection unit is obtained, the substrate does not need to be used And the bracket directly seals a part or the whole area of the light-emitting unit except the connection area of the second connection end, the fourth connection end and the external circuit, thereby eliminating the fabrication of the substrate, the mounting substrate, and the flip-chip fixing The operation of fixing the substrate or the positive assembly on the substrate, making the bracket, and mounting the bracket greatly simplifies the process, reduces the cost, and improves the efficiency.
  • the LED light source fabricated by the manufacturing method provided by the present invention comprises
  • FIG. 1 is a flowchart of a method for fabricating an LED light source according to Embodiment 1 of the present invention
  • FIG. 2 is a schematic structural view of a light emitting unit fabricated by using the manufacturing method provided by the first embodiment of the present invention
  • FIG. 3 is a schematic structural view of another light emitting unit fabricated by using the manufacturing method provided by the first embodiment of the present invention.
  • FIG. 4 is a schematic structural view of another light emitting unit fabricated by using the manufacturing method provided by the first embodiment of the present invention.
  • FIG. 5 is a schematic structural view of another light emitting unit fabricated by using the manufacturing method provided by the first embodiment of the present invention.
  • FIG. 6 is a schematic structural view of another light emitting unit fabricated by using the manufacturing method provided by the first embodiment of the present invention.
  • FIG. 7 is a schematic structural view of another light emitting unit fabricated by using the manufacturing method provided by the first embodiment of the present invention.
  • Embodiment 8 is a schematic structural view of an LED light source fabricated by using the manufacturing method provided by Embodiment 1 of the present invention.
  • Embodiment 9 is a schematic structural view of another LED light source fabricated by using the manufacturing method provided by Embodiment 1 of the present invention.
  • FIG. 10 is a schematic structural view of another LED light source fabricated by the manufacturing method provided by the first embodiment of the present invention.
  • FIG. 11 is a flowchart of a method for mass production of an LED light source according to Embodiment 2 of the present invention.
  • Embodiment 1 is a diagrammatic representation of Embodiment 1:
  • FIG. 1 is a flowchart of a method for fabricating an LED light source according to Embodiment 1 of the present invention. Referring to FIG. 1, the following process is included:
  • the epitaxial structure comprises a single light emitting epitaxial layer structure or at least two electrically connected light emitting epitaxial layer structures, and the at least two electrically connected light emitting epitaxial layer structures pass Electrically connected in series, in parallel, or in series and in a mixed manner;
  • the epitaxial structure has at least one end N-type semiconductor layer and at least one end P-type semiconductor layer.
  • luminescent epitaxial layer structures There are four types of luminescent epitaxial layer structures:
  • the first type includes at least: an N-type semiconductor layer, a light-emitting layer, a P-type semiconductor layer, and a metal reflective layer, and the N-type semiconductor layer, the light-emitting layer, the P-type semiconductor layer, and the metal reflective layer are close to the substrate Laminated on the substrate in order to the far side; the metal reflective layer has a light reflecting function.
  • the second type includes at least: an N-type semiconductor layer, a light-emitting layer, and a P-type semiconductor layer having a reflective function, and the N-type semiconductor layer, the light-emitting layer, and the P-type semiconductor layer having a reflective function are close to the substrate
  • the substrate is laminated on the substrate in order of distance; the P-type semiconductor layer having a reflective function has a light reflecting function.
  • the substrate is a transparent substrate, and the light emitted by the luminescent layer is reflected by the metal reflective layer or the reflective P-type semiconductor layer, and the substrate has an epitaxial structure side.
  • the opposite side (assuming that the side having the epitaxial structure is the front side of the substrate, the opposite side is the back side of the substrate) is the main light-emitting surface.
  • a third type comprising at least an N-type semiconductor layer, a light-emitting layer, and a P-type semiconductor layer, and having no light-emitting function, the N-type semiconductor layer, the light-emitting layer, and the P-type semiconductor layer being sequentially from near to far from the substrate Laminated on the substrate.
  • the fourth type is a vertical structure of the light emitting epitaxial layer structure, wherein the substrate is a metal substrate, and at least includes: a P-type semiconductor layer, a light-emitting layer, and an N-type semiconductor layer, and the P-type semiconductor layer, the light-emitting layer, and the N-type semiconductor layer are stacked on the metal substrate in this order from the near side to the far side.
  • the fourth type is opaque due to the substrate, and the third type is opaque regardless of whether the substrate is transparent or not, and the side having the epitaxial structure on the substrate is the main illuminating surface. .
  • each of the light emitting epitaxial layers has the same structure, and may be the first, second, and third light emitting epitaxial layer structures.
  • the epitaxial structure comprises a single luminescent epitaxial layer structure
  • the epitaxial structure has an end N-type semiconductor layer and an end P-type semiconductor layer
  • the end N-type semiconductor layer is an N-type semiconductor layer of the single luminescent epitaxial layer structure
  • the end P-type semiconductor layer is a P-type semiconductor layer of the single light-emitting epitaxial layer structure.
  • the epitaxial structure includes at least two electrically connected luminescent epitaxial layer structures
  • the epitaxial structure has an end N-type semiconductor layer and an end P-type a semiconductor layer
  • an N-type semiconductor of a light-emitting epitaxial layer structure at one end of the series circuit is used as an end N-type semiconductor layer of the epitaxial structure
  • a P-type semiconductor layer of a light-emitting epitaxial layer structure at the other end is an end P-type semiconductor of the epitaxial structure.
  • the N-type semiconductor layer of each of the light-emitting epitaxial layer structures serves as an end N-type semiconductor layer of the epitaxial structure
  • the P-type semiconductor layer is an end P-type semiconductor layer of the epitaxial structure, that is, the epitaxial structure has an end N-type semiconductor layer and an end P-type semiconductor layer of the same number as the light-emitting epitaxial layer structure.
  • An N-type semiconductor having a light-emitting epitaxial layer structure at one end of the entire circuit formed by all the light-emitting epitaxial layer structures is used as an end N-type semiconductor layer of the epitaxial structure, and a P-type semiconductor layer having a light-emitting epitaxial layer structure at the other end is the epitaxial structure. End P-type semiconductor layer.
  • the first connection unit including the first connection end and the second connection end, and the second connection unit including the third connection end and the fourth connection end are formed as follows, and the substrate, the epitaxial structure, and the first connection are obtained.
  • a light emitting unit of the second connecting unit the first connecting end is disposed on the epitaxial structure and electrically connected to each of the end N-type semiconductor layers, and the second connecting end extends out of the epitaxial structure And connecting the first connection end to an external circuit; the third connection end is disposed on the epitaxial structure and electrically connected to each of the end P-type semiconductor layers, and the fourth connection end extends Outside the epitaxial structure and connecting the third connection terminal to the external circuit.
  • the light-emitting unit obtained in this step does not include a substrate, a support, a gold wire, or the like.
  • the light emitting unit is composed of the substrate, the epitaxial structure, the first connecting unit and the second connecting unit.
  • the manner of forming the first connecting unit and the second connecting unit is not limited, and only the arrangement manner of the first connecting unit and the second connecting unit is limited.
  • the forming manners of the first connecting unit and the second connecting unit include but are not limited to: The first connecting unit and the second connecting unit furtherly disposed the first connecting end and the third connecting end on the epitaxial structure, and the second connecting end and the fourth connecting end extend beyond the epitaxial structure. Or directly fabricating the first connecting unit and the second connecting unit in the epitaxial structure.
  • the first connection end and the third connection end are disposed on the same side of the substrate, and the first connection end and the third connection end are formed.
  • the electrode fabricated on the epitaxial layer of the existing LED chip including but not limited to: the first connection end is formed by metal paste on the epitaxial structure and electrically connected to each end N-type semiconductor layer, or the first connection The terminal is directly deposited on the epitaxial structure and electrically connected to each end of the N-type semiconductor layer; after the third connection end is fabricated, the metal paste is disposed on the epitaxial structure and electrically connected to each end P-type semiconductor layer, or The three terminals are directly deposited on the epitaxial structure and electrically connected to the respective P-type semiconductor layers.
  • Metal pastes include, but are not limited to, creamy gold, silver, copper, aluminum, tin, or paste metal alloys.
  • the metal substrate is simultaneously used as the second connecting unit, and no second connecting unit is provided, wherein the fourth luminescent epitaxial layer structure is P-type.
  • a portion of the metal substrate occupied by the semiconductor layer is a third connection end, and a portion of the metal substrate extending beyond the structure of the light-emitting epitaxial layer of the vertical structure serves as a fourth connection end.
  • the epitaxial structure shown in FIG. 2 includes a single luminescent epitaxial layer structure A1 and is a third luminescent epitaxial layer structure having an end N-type semiconductor layer and an end P-type semiconductor layer, the single luminescent epitaxial structure.
  • the N-type semiconductor layer of the layer structure A1 is an end N-type semiconductor layer of the epitaxial structure
  • the P-type semiconductor layer is an end P-type semiconductor layer of the epitaxial structure
  • the first connection end 2121 is disposed on the luminescent epitaxial layer structure A1.
  • the third connection end 2131 is disposed on the light-emitting epitaxial layer structure A1 and electrically connected to the P-type semiconductor layer,
  • the second connection end 2122 and the fourth connection end 2132 extend beyond the illuminating epitaxial layer structure A1 and are used to connect the first connection end 2121 and the third connection end 2131 to an external circuit.
  • the epitaxial structure shown in FIG. 3 includes at least two light emitting epitaxial layer structures (A1 to An) electrically connected in series, and each of the light emitting epitaxial layer structures (A1 to An) is the third type, and the adjacent light emitting epitaxial layer structure
  • the electrical connection structures B fabricated on the substrate are connected in series.
  • the epitaxial structure has only one end N-type semiconductor layer and one end P-type semiconductor layer because all of the light-emitting epitaxial layer structures (A1 to An) are connected in series, and the N-type semiconductor of the light-emitting epitaxial layer structure A1 at one end of the series circuit is used.
  • the end N-type semiconductor layer of the epitaxial structure, the P-type semiconductor layer of the other end of the light-emitting epitaxial layer structure An is an end P-type semiconductor layer of the epitaxial structure, and the first connection end 2121 is disposed on the light-emitting epitaxial layer structure A1.
  • the third connection end 2131 is electrically connected to the P-type semiconductor layer of the luminescent epitaxial layer structure An, and is electrically connected to the N-type semiconductor layer of the luminescent epitaxial layer structure A1.
  • the second connecting end 2122 and the fourth connecting end 2132 respectively extend beyond the light emitting epitaxial layer structures A1 and An and are used for connecting the first connecting end 2121 and the third connecting end 2131 to an external circuit.
  • each of the light-emitting epitaxial layer structures (A1 to An) in the epitaxial structure is electrically connected in parallel, and each of the light-emitting epitaxial layer structures (A1 to An) is the third one described above.
  • the epitaxial structure has n end N-type semiconductor layers and n end P-type semiconductor layers, and each of the N-type semiconductors of the light-emitting epitaxial layer structure (A1 to An) serves as an end N-type semiconductor layer of the epitaxial structure.
  • the P-type semiconductor layer is an end P-type semiconductor layer of the epitaxial structure, the first connection end includes n first connection portions, and the third connection end includes n third connection portions, wherein each of the light-emitting epitaxial layer structures emits light
  • Each of the epitaxial layer structures (A1 to An) is provided with a first connecting portion and a third connecting portion.
  • the first connecting portion is disposed on the light emitting epitaxial layer structure and electrically connected to the N-type semiconductor layer of the light emitting epitaxial layer structure.
  • a third connecting portion is disposed on the luminescent epitaxial layer structure and electrically connected to the P-type semiconductor layer of the luminescent epitaxial layer structure, and the second connecting end extends beyond the epitaxial structure and is used for all the n first connecting portions
  • the external circuit that is, one end of the second connection end is electrically connected to the n first connection parts, and the other end is connected to the external circuit;
  • the fourth connection end 2 extends beyond the epitaxial structure and is used for the n first
  • the three connection parts are connected to the external circuit, that is, one end of the fourth connection end is electrically connected to the n third connection parts, and the other end is connected to an external circuit.
  • the second connecting end and the fourth connecting end are arranged to extend beyond the epitaxial structure to form a floating end, or extend beyond the epitaxial structure and conform to a region on the substrate other than the portion occupied by the epitaxial structure. Or extending beyond the epitaxial structure and being fixed by an intermediate structure on a region of the substrate that is outside the portion occupied by the epitaxial structure.
  • the second connection end 2122 and the fourth connection end 2132 extend beyond the epitaxial structure to form a floating end, and are horizontally suspended; as shown in FIG. 4, the second connection end 2122 and the fourth connection The end 2132 is suspended downward; as shown in FIG.
  • the second connecting end 2122 and the fourth connecting end 2132 are suspended upward; as shown in FIG. 6, the second connecting end 2122 and the fourth connecting end 2132 extend beyond the epitaxial structure and Adhering to a region other than the portion occupied by the epitaxial structure on the substrate; as shown in FIG. 7, the second connection end 2122 and the fourth connection end 2132 extend beyond the epitaxial structure and are fixed to the substrate through the intermediate structure 214.
  • the upper structure 214 may be a floating point or an epitaxial layer which is extra when an epitaxial structure is formed on the substrate.
  • the second connection end and the fourth connection end are electrically connected to the external circuit by means of electric welding; or are electrically connected to the external circuit through the connection terminal.
  • one end of the connection terminal is electrically connected to the external circuit, and the other end has a connection port.
  • the connection port can be matched with the shape of the second connection end, and the second connection end is received therein and electrically connected to the external circuit, or
  • the connecting port houses the second connecting end and a part of the substrate under the second connecting end together and electrically connects the second connecting end to the external circuit.
  • the shape of the second connecting end and the fourth connecting end is one or more of a Z shape, a T shape, an L shape, a ten shape, a square shape, an elliptical shape, a circular shape and an irregular shape.
  • the first connecting unit and the second connecting unit are an integrated sheet structure.
  • the first connecting unit and the second connecting unit of the integrated sheet structure may be fabricated first, and then the first connecting end and the third connecting end are disposed on the epitaxial structure through the metal paste and respectively respectively and the N-type semiconductor layers at the respective ends
  • the end P-type semiconductor layer is electrically connected, and the second connection end and the fourth connection end are extended beyond the epitaxial structure for connecting to an external circuit. If the first connecting unit and the second connecting unit of the integrated sheet structure are electrically conductive, the first connecting end and the second connecting end are naturally electrically connected, and the third connecting end and the fourth connecting end are naturally Electrically connected.
  • the inscribed circle diameter of the connection region of the second connection end and the external circuit is 200 micrometers to 1500 micrometers.
  • the inscribed circle diameter of the connection region of the fourth connection terminal and the external circuit is 200 micrometers to 1500 micrometers. This size is different from the size of the electrodes of the existing LED chip, and the second connection end and the fourth connection end of this size can be directly and firmly connected to an external circuit.
  • the substrate is one of sapphire, silicon, glass, silicon carbide materials.
  • the sapphire substrate is a transparent substrate.
  • the sealing area includes at least a main light exit area of the light emitting unit.
  • an LED light source including the light emitting unit assembly and an encapsulation layer formed on the light emitting unit assembly is obtained.
  • the packaging step does not require a substrate, does not require a bracket, and does not require a gold wire before sealing. Accordingly, the obtained LED light source does not have a substrate, a bracket, or a gold wire, which is different from the existing packaging process.
  • the obtained LED light source is composed of a light emitting unit and an encapsulation layer formed by sealing on the light emitting unit.
  • the light exiting region of the light emitting unit refers to a region on the light emitting unit that actually emits light, and preferably includes an outer surface of the light emitting epitaxial layer structure, and if it is a transparent substrate, a mapping region in which the light emitting epitaxial layer structure is mapped on the other side of the substrate.
  • the main light exit area refers to the area with the highest light extraction efficiency, and the surface where the main light emitting area is located is the main light exit surface of the light emitting unit.
  • the opposite side of the substrate having the epitaxial structure (assuming the side having the epitaxial structure)
  • the front surface of the substrate is the front surface of the substrate, which is the main light-emitting surface of the light-emitting unit; for the light-emitting unit having the epitaxial structure composed of the third and fourth light-emitting epitaxial layer structures, the light emitted by the light-emitting layer is not
  • the side that is reflected and has an epitaxial structure on the substrate is the main light-emitting surface of the light-emitting unit.
  • the manner of sealing the partial area of the light-emitting unit except the connection area of the second connection end, the fourth connection end and the external circuit includes: on the main light-emitting surface of the light-emitting unit And sealing the area except the connection area of the second connection end, the fourth connection end and the external circuit. That is, the other surfaces of the light-emitting unit are not sealed.
  • the manner of sealing the entire area of the light-emitting unit except the connection area of the second connection end, the fourth connection end and the external circuit includes:
  • the area other than the connection area of the second connection end, the fourth connection end and the external circuit is sealed on the main light-emitting surface of the light-emitting unit and the opposite surface thereof.
  • the following specific manner first placing one of the main light emitting surface or the opposite surface of the light emitting unit face up, and facing the second connecting end and the fourth connecting end on the upward facing side Performing sealing; rotating the light-emitting unit 180 degrees, so that the other side of the main light-emitting surface of the light-emitting unit or the opposite surface thereof faces upward, and the light-emitting unit assembly is fixed by the bracket and the un-filled area on the light-emitting unit. And the area to be sealed is suspended; and the area other than the second connection end and the fourth connection end is sealed on the upward facing surface.
  • the final formed encapsulation layer can be a conjoined encapsulation layer, especially when the encapsulation process is used for encapsulation, even if the encapsulation operation is performed only on both sides, since the colloid is a fluid In the shape, the encapsulation layer forming the two sides is finally integrated.
  • the second connection end, the fourth connection end and the external circuit are disposed on the main light-emitting surface of the light-emitting unit, the opposite surface of the main light-emitting surface, and a part or all of the side between the main light-emitting surface and the opposite surface thereof.
  • the area outside the connection area is sealed.
  • a region other than the connection region of the second connection end, the fourth connection end, and the external circuit may be sealed on the four faces, and the two end faces in the longitudinal direction are exposed.
  • the encapsulation layer formed on each side of the second method is integrated into a single encapsulation layer.
  • the opposite surface of the main light-emitting surface of the light-emitting unit is the side having the epitaxial structure on the substrate
  • the opposite surface of the main light-emitting surface is the opposite surface of the substrate having the epitaxial structure (assuming that the side having the epitaxial structure is the front side of the substrate)
  • the opposite side of the light-emitting unit is the opposite side of the side having the epitaxial structure on the substrate
  • the opposite side of the main light-emitting surface is the side having the epitaxial structure on the substrate.
  • the specific sealing method includes, but is not limited to, the mobile continuous injection molding, the molding sealing, the printing sealant listed below, wherein
  • the mobile continuous injection molding that is, in the region other than the connection region of the second connection end, the fourth connection end and the external circuit on the front surface (the main light exit surface, the opposite surface or the side surface thereof) of the light emitting unit, along the light emitting
  • the alignment track of the epitaxial layer structure is moved continuously by injection, and after curing, a continuous encapsulation layer is formed.
  • the LED light sources shown in FIGS. 8 and 9 are obtained by the following manufacturing method: a connection area of the second connection end 2122, the fourth connection end 2132, and an external circuit on the main light-emitting surface of the light-emitting unit.
  • the continuous aligning is performed along the alignment trajectory of the luminescent epitaxial layer structure (A1 to An), and after curing, a continuous encapsulation layer 220 is formed.
  • the substrate in FIG. 8 is a transparent substrate, and each of the light-emitting epitaxial layer structures (A1 to An) connected in series includes a metal mirror layer or a P-type semiconductor layer having a reflective function, and thus has a substrate thereon.
  • the opposite side of the side of the epitaxial structure (assuming that the side having the epitaxial structure is the front side of the substrate, the opposite side of which is the back side of the substrate) is the main light-emitting surface of the light-emitting unit.
  • the substrate in FIG. 9 is a non-transparent substrate (or each of the light-emitting epitaxial layer structures (A1 to An) has no light-emitting function, for example, no metal mirror layer, and the P-type semiconductor layer does not have a reflective function), on the substrate.
  • the side having the epitaxial structure is the main light-emitting surface of the light-emitting unit. Therefore, the LED light source shown in FIG.
  • the LED light source shown in FIG. 9 is a mobile continuous injection on the side having an epitaxial structure on the substrate, and the cured encapsulation layer 220 is formed on the side having the epitaxial structure except the second connection end 2122.
  • the fourth connection end 2132 is packaged integrally with an area other than the connection area of the external circuit.
  • the LED light source shown in FIG. 10 is obtained by the following method: first placing one of the main light-emitting surfaces of the light-emitting unit or its opposite surface face up; on the upward side, except for the second connection In a region other than the connection region of the end 2122 and the fourth connection terminal 2132 and the external circuit, the continuous aligning is performed along the alignment trajectory of the luminescent epitaxial layer structure (A1 to An), and a solid is formed on the surface after curing.
  • the body encapsulation layer; the light-emitting unit is flipped 180 degrees, that is, the other side of the main light-emitting surface of the light-emitting unit or the opposite surface thereof faces upward, and the light-emitting unit is combined with the un-gel-filled area of the light-emitting unit to emit light
  • the unit is fixed to suspend the sealed area; and the second connection end 2122, the fourth connection end 2132 and the external circuit are further disposed on the upward side (the other of the main light emitting surface of the light emitting unit or the opposite side thereof)
  • the continuous priming along the aligning trajectory of the luminescent epitaxial layer structure (A1 to An) due to the fluidity of the colloid, the formed body formed on the main illuminating surface and the opposite surface thereof after curing Encapsulation layer is connected to one
  • the body finally forms a joint encapsulation layer 220 enclosing four faces of the light-emitting unit, and integrally encapsulates the light-emitting unit with
  • Molding sealant that is, putting the light-emitting unit into the mold, clamping the upper and lower molds with a hydraulic press and vacuuming, then heating the solid epoxy into the inlet of the injection lane to make it liquid, and using the hydraulic ejector Turning downwards, the liquid epoxy is pressed into the mold rubber channel, so that the epoxy enters the molding channel of each light-emitting unit of the mold along the rubber lane, covering the current surface of the light-emitting unit except the second connection end, the fourth connection end and the outside The area outside the connection area of the circuit is cured by a certain clamping pressure and temperature to obtain a joint encapsulation layer.
  • the molding and sealing method is particularly suitable for sealing the entire area of the light-emitting unit except the connection area of the second connection end, the fourth connection end and the external circuit.
  • Printing sealant that is, using printing technology to print fluorescent glue layer by layer on the current surface of the light-emitting unit except for the connection area of the second connection end, the fourth connection end and the external circuit, adjacent light-emitting extension
  • the layer structure can be printed continuously or intermittently. If continuous printing is used, it will be cured to form a joint encapsulation layer.
  • Embodiment 2 is a diagrammatic representation of Embodiment 1:
  • FIG. 11 is a flowchart of a method for manufacturing a batch of an LED light source according to Embodiment 2 of the present invention. Referring to FIG. 11, the following process is included:
  • each epitaxial structure comprises a single light emitting epitaxial layer structure or at least two electrically connected light emitting epitaxial layer structures, and the at least two electrically connected light emitting epitaxes
  • the layer structures are electrically connected by series, parallel or series and mixed; each epitaxial structure has at least one end N-type semiconductor layer and at least one end P-type semiconductor layer; and a supporting module is attached to the other side of the substrate.
  • the substrate includes, but is not limited to, one of sapphire, silicon, glass, silicon carbide materials.
  • Support modules include, but are not limited to, blue films.
  • the luminescent epitaxial layer structure has four kinds as exemplified in the first embodiment.
  • each of the illuminating epitaxial layers on the wafer has the same structure, which facilitates uniform operation of subsequent steps.
  • the number of light-emitting epitaxial layer structures in each epitaxial structure may be different.
  • step S002 in the manner of step S102 in the first embodiment, respectively fabricating a first connecting unit and a second connecting unit for each epitaxial structure to obtain a wafer, the wafer comprising at least two light emitting units sharing the substrate, and A trench is disposed between adjacent light emitting units on the substrate.
  • the structure of the light-emitting unit is as shown in the first embodiment, and does not include a structure such as a substrate, a bracket, or a gold wire.
  • the obtained light emitting unit is composed of a substrate, an epitaxial structure, a first connecting unit and a second connecting unit.
  • the shape of the wafer may be one or more of a shape, a T shape, a U shape, an L shape, a square shape, an elliptical shape, a circular shape, and an irregular shape.
  • S003 Perform crystallizing on the support module along a trench between adjacent light emitting units.
  • each LED light source includes a light emitting unit, and an encapsulation layer obtained by sealing a partial or whole region other than the second connecting end and the fourth connecting end .
  • This step does not require a substrate, no need for a bracket, and does not require a gold wire before sealing.
  • the obtained LED light source is composed of a light-emitting unit and an encapsulation layer formed by sealing on the light-emitting unit, and has no substrate, a bracket, or a gold wire.
  • the light exiting region of the light emitting unit refers to a region on the light emitting unit that actually emits light, and preferably includes an outer surface of the light emitting epitaxial layer structure, and if it is a transparent substrate, a mapping region in which the light emitting epitaxial layer structure is mapped on the other side of the substrate.
  • the main light exit area refers to the area with the highest light extraction efficiency, and the surface where the main light emitting area is located is the main light exit surface of the light emitting unit.
  • the partial or integral region of each of the light-emitting units except the connection region of the second connection end, the fourth connection end and the external circuit is sealed according to the following principle: in the inner edge of the light-emitting unit The trajectory of the illuminating epitaxial layer structure is moved continuously by injection, and the different illuminating units are intermittently injected, and after curing, a plurality of conjoined encapsulation layers are formed, and each of the encapsulation layers encapsulates a single illuminating unit except the second connecting end, A partial or integral area outside the connection area of the fourth connection end with the external circuit.
  • sealing a partial area of each of the light emitting units except the connection area of the second connection end, the fourth connection end and the external circuit includes: on the wafer, each of the light emitting The main light-emitting surface of the unit is sealed except for the connection area of the second connection end, the fourth connection end and the external circuit.
  • sealing the entire area of the light-emitting unit except the connection area of the second connection end, the fourth connection end and the external circuit includes: on the wafer, each illumination The main light-emitting surface of the unit and its opposite surface are sealed except for the connection area of the second connection end, the fourth connection end and the external circuit.
  • the side having the epitaxial structure on the wafer faces upward, and the surface of the light emitting unit except the connection area of the second connection end and the fourth connection end and the external circuit The area is sealed; the wafer is flipped 180 degrees, the opposite side is facing up, and the wafer is held down by the vacuum chuck to fix the wafer; the support module is removed; on the face facing up A region other than the connection region of the second connection end, the fourth connection end, and the external circuit is sealed on each of the light-emitting units.
  • the specific sealing method includes, but is not limited to, the following: on the face of the wafer, the second connecting end, the fourth connecting end and the external circuit are disposed on the light emitting unit.
  • the mobile continuous injection is performed, and in a certain order, the dispensing head is moved to the next light-emitting unit, and the glue is injected in the above manner, that is, different illumination Intermittent injection between units.
  • the wafer fabrication method provided by the invention simplifies the process compared with the prior art, and the LED light source made in batches has a simpler structure and lower cost.

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

La présente invention porte sur un procédé de fabrication pour source de lumière à diode électroluminescente (DEL) et sur un procédé de fabrication par lots. Le procédé de fabrication pour la source de lumière à DEL comprend la fabrication d'une unité d'émission de lumière comportant un substrat, une structure épitaxiale, une première unité de connexion et une seconde unité de connexion, la structure épitaxiale étant pourvue d'au moins une couche de semi-conducteur de type N de partie d'extrémité et d'au moins une couche de semi-conducteur de type P de partie d'extrémité, la première unité de connexion comportant une première extrémité de connexion (2121) électriquement connectée à chaque couche de semi-conducteur de type N de partie d'extrémité, et une deuxième extrémité de connexion (2122) accédant à un circuit externe, la seconde unité de connexion comportant une troisième extrémité de connexion (2123) électriquement connectée à chaque couche de semi-conducteur de type P de partie d'extrémité, et une quatrième extrémité de connexion (2124) accédant au circuit externe. Les première et troisième extrémités de connexion (2121, 2123) sont agencées sur la structure épitaxiale, et les deuxième et quatrième extrémités de connexion (2122, 2124) s'étendent hors de la structure épitaxiale. Un joint d'étanchéité adhésif est exécuté sur l'unité d'émission de lumière sur une partie à l'exclusion de surfaces connectant la deuxième extrémité de connexion (2122) et la quatrième extrémité de connexion (2124) au circuit externe ou sur toute la surface. La présente invention résout les problèmes selon lesquels les procédés d'encapsulation de DEL existants sont laborieux, les coûts sont élevés et le rendement est faible.
PCT/CN2014/082778 2014-07-23 2014-07-23 Procédé de fabrication pour source de lumière à diode électroluminescente (del) et procédé de fabrication par lots WO2016011606A1 (fr)

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CN201480076773.6A CN106463575A (zh) 2014-07-23 2014-07-23 Led光源的制作方法及批量制作方法
PCT/CN2014/082778 WO2016011606A1 (fr) 2014-07-23 2014-07-23 Procédé de fabrication pour source de lumière à diode électroluminescente (del) et procédé de fabrication par lots

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