WO2015198533A1 - Substrat de grille de connexion lié à la résine et son procédé de fabrication - Google Patents

Substrat de grille de connexion lié à la résine et son procédé de fabrication Download PDF

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Publication number
WO2015198533A1
WO2015198533A1 PCT/JP2015/002757 JP2015002757W WO2015198533A1 WO 2015198533 A1 WO2015198533 A1 WO 2015198533A1 JP 2015002757 W JP2015002757 W JP 2015002757W WO 2015198533 A1 WO2015198533 A1 WO 2015198533A1
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Prior art keywords
resin
lead frame
metal
insulating resin
substrate
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PCT/JP2015/002757
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English (en)
Japanese (ja)
Inventor
馬庭　進
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凸版印刷株式会社
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Publication of WO2015198533A1 publication Critical patent/WO2015198533A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/50—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor for integrated circuit devices, e.g. power bus, number of leads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Definitions

  • the present invention relates to a lead frame substrate with resin and a method for manufacturing the same.
  • an intermediary board called an interposer (semiconductor element mounting board) may be used.
  • the interposer includes, for example, a lead frame type substrate formed by molding an insulating resin, that is, a lead frame substrate with resin (see Patent Document 1).
  • solder balls may be disposed on the connection pads provided on the back surface of the lead frame substrate with resin, and solder bumps may be formed through a reflow process.
  • the connection pad and the resin around it are on the same plane, the solder ball is likely to drop off, and the possibility of impairing connection reliability may increase.
  • the resin-equipped lead frame substrate according to the related art has a problem that connection reliability between the resin-equipped lead frame substrate and the solder ball may be lowered.
  • the present invention is intended to solve the above-described problems, and is capable of improving the connection reliability between a resin-equipped leadframe substrate and solder (solder balls), and a method for manufacturing the same. The purpose is to provide.
  • a wiring pattern portion formed by removing a metal from a part of at least one surface of a metal base so that the plate thickness of the metal base is reduced.
  • an insulating resin portion formed by substituting the insulating resin for the portion from which the metal is removed, and the height of the insulating resin portion is 3 ⁇ m or more higher than the height of the wiring pattern portion This is a resin-attached lead frame substrate.
  • the height of the connection pad part which is a part of the wiring pattern part is made lower than the surrounding insulating resin part, or The height of the connection pad portion can be adjusted to be higher than that of the surrounding insulating resin portion by plating. Therefore, according to one embodiment of the present invention, it is possible to provide a resin-attached lead frame substrate and a method for manufacturing the same that can improve the connection reliability with solder.
  • FIG. 1 It is sectional drawing which shows the structure of the lead frame board
  • FIG. 3 is a cross-sectional view showing a positional relationship of plating layers provided in the resin-attached lead frame substrate according to Example 1. It is sectional drawing which shows the structure of a solder bump vicinity. 6 is a cross-sectional view showing a positional relationship of plating layers provided in a lead frame substrate with resin according to Comparative Example 1.
  • the lead frame substrate with resin RFB includes a metal substrate 1, leads 4, electrode pads 5, a front surface die pad 7, a back surface die pad 8, an insulating resin portion 9, and a plating layer 10.
  • FIG. 1 is a cross-sectional view of the resin-attached lead frame substrate RFB according to this embodiment.
  • the metal substrate 1 is formed using copper etc., for example.
  • the lead 4 is formed on one surface (main surface) of the metal base 1 using, for example, a photosensitive resist or a dry film.
  • the main surface is also simply referred to as “surface”.
  • the electrode pad 5 is formed on the other surface (the surface opposite to the main surface) of the metal substrate 1 by using, for example, a photosensitive resist or a dry film.
  • the surface opposite to the main surface is also simply referred to as “back surface”.
  • the surface die pad 7 is formed on the surface of the metal substrate 1 using, for example, a photosensitive resist or a dry film.
  • the back surface die pad 8 is formed on the back surface of the metal substrate 1 using, for example, a photosensitive resist or a dry film.
  • the insulating resin portion 9 is formed using, for example, a transfer mold method described later.
  • the plating layer 10 is formed on the surface of the lead 4, the electrode pad 5, the front surface die pad 7 and the back surface die pad 8 (surface opposite to the surface facing the metal substrate 1).
  • the resin-attached lead frame substrate RFB is formed to include a plurality of pieces (9 pieces in the example shown in the drawings).
  • FIG. 2 is a plan view showing the surface of nine adjacent pieces of the resin-attached lead frame substrate RFB according to this embodiment.
  • FIG. 3 is a plan view showing the back surface of nine adjacent pieces of the resin-attached lead frame substrate RFB according to this embodiment.
  • a pattern of the tie bar 20 is formed between adjacent pieces using, for example, a photosensitive resist or a dry film.
  • FIG. 4 is a plan view showing one piece constituting the surface of the resin-attached lead frame substrate RFB according to the present embodiment.
  • the pattern of the back surface die pad 8 and the pattern of the electrode pad 5 are formed on one piece constituting the back surface of the resin-attached lead frame substrate RFB using, for example, a photosensitive resist or a dry film.
  • FIG. 5 is a plan view showing one piece constituting the back surface of the resin-attached lead frame substrate RFB according to the present embodiment.
  • the pattern position of the back surface die pad 8 formed on the back surface of the lead frame substrate with resin RFB is a part of the back side of the position of the lead 4 on the surface of the lead frame substrate with resin RFB, and in many cases, the position of one end of the lead The back side.
  • the pattern of the surface die pad 7 is located at the center of the metal base 1, and the pattern of the leads 4 extends radially outward from the vicinity thereof.
  • the pattern of the back surface die pad 8 is formed on the back side of the outermost position of the pattern of the leads 4.
  • the method of manufacturing a lead frame substrate with resin includes a wiring pattern forming step and an insulating resin portion forming step, and the insulating resin portion forming step includes an insulating resin filling step, a molten insulating resin solidifying step, and a pattern removing step. Including.
  • the wiring pattern forming step first, a part of the metal plate is removed by etching or the like. Specifically, with respect to the metal substrate 1 shown in FIG. 7 (a), as shown in FIG.
  • the photosensitive resist 2 is applied to both surfaces of the metal substrate 1 by, for example, a roll coater. After coating, pre-bake. Next, pattern exposure is performed from both sides via a pattern exposure photomask having a desired pattern, which will be described later, and then development processing is performed. Finally, washing with water and post baking are performed to form a resist pattern 3 as shown in FIG.
  • FIG. 7 is a cross-sectional view showing a wiring pattern forming step.
  • etching is performed from both surfaces of the metal base 1 using, for example, a ferric chloride solution or the like, as shown in FIG.
  • the resist removal after the etching process is not performed, and the process proceeds to the insulating resin portion forming process which is the next process while leaving the resist pattern 3 left.
  • a surface die pad 7, leads 4, suspension leads 19 (not shown), and tie bars 20 are formed on the surface of the metal substrate 1.
  • a back surface die pad 8 and an electrode pad 5 are formed on the back surface.
  • the wiring pattern portion is also referred to as a “wiring pattern portion”.
  • the metal removal portion of the metal plate (metal substrate 1) formed in the wiring pattern forming step is filled with insulating resin to form the insulating resin portion 9.
  • the most suitable method for forming the insulating resin portion 9 is a so-called transfer molding method. The steps of this transfer mold method will be briefly described below. First, as shown in FIG. 8, the metal plate (metal substrate 1) formed in the wiring pattern forming step is sandwiched between the upper mold 21 and the lower mold 22 and clamped. Thereafter, the solid resin is poured into the mold in a state of being melted by heating (melted insulating resin 23), and the metal removal portion of the metal plate (metal substrate 1) and the inner walls of the upper mold 21 and the lower mold 22 are formed. Fill the cavity to make (insulating resin filling process). Finally, the resin poured into the mold is solidified (molten insulating resin solidification step).
  • the transfer mold method when the metal mold (upper metal mold 21 and lower metal mold 22) and the metal plate (metal base material 1) are in close contact with each other, a resin (molten insulating resin 23) is interposed therebetween. Ideally it should not penetrate. In practice, however, the insulating resin 23 melted only slightly from a slight gap between the mold and the metal plate usually enters a burr. In general, the molten insulating resin 23 is filled and solidified and then removed by a physical or chemical method. As a result, the surface of the lead frame substrate with resin and the back surface of the resin-made lead frame substrate have the same height as the surface of the metal plate (metal substrate 1) and the surface of the insulating resin, thereby forming the same plane.
  • a metal plate (metal plate formed in the wiring pattern forming step: lead frame) after removing a predetermined portion of metal is molded from the thickness direction.
  • a molten insulating resin is injected into a cavity formed between the upper mold 21 and the lower mold 22 to be clamped and formed in the above-described mold clamping state, and then solidified.
  • the insulating resin portion 9 is formed on the portion of the metal substrate 1 where the metal is removed while leaving the resist pattern 3. Is replaced by In the pattern removing step, after the molten insulating resin injected into the cavity is solidified with the resist pattern 3 left, the resist pattern 3 is removed as shown in FIG.
  • the lead frame with resin according to the present embodiment is formed.
  • Example 1 As a manufacturing method of the leadframe substrate with resin according to the first embodiment, a manufacturing method of an LGA (Land Grid Array) type leadframe substrate will be described as an example.
  • LGA Large Grid Array
  • Each LGA produced in Example 1 has a size of 10 mm square, and has 64 pins of external connection terminals in an array shape in plan view.
  • the substrate was multifaceted and cut and cut after the following manufacturing steps to obtain individual LGA type lead frames with resin (for example, see FIG. 7). In the figure, the number of pins is omitted and the numbers are reduced.
  • a metal substrate 1 having a long strip shape having a width of 90 mm and a thickness of 200 ⁇ m was prepared (see FIG. 7A).
  • a photosensitive resist 2 manufactured by Tokyo Ohka Co., Ltd., OFPR4000 was coated on both surfaces of the metal substrate 1 so as to have a thickness of 10 ⁇ m with a roll coater, and then prebaked at 90 ° C. (Refer FIG.7 (b)).
  • pattern exposure was performed from both sides of the metal substrate 1 through a photomask for pattern exposure having a desired pattern (described later), and then development processing was performed with a 1% sodium hydroxide solution.
  • a resist pattern 3 for forming a surface die pad 7 for mounting a semiconductor element and a wiring pattern are formed on one surface side of the metal substrate 1 (that is, the surface on which the semiconductor element is mounted).
  • a resist pattern 3 was formed.
  • the resist pattern 3 for forming the electrode pad 5 and the semiconductor to be mounted are formed on the other surface of the metal substrate 1 (that is, the back surface that is the surface opposite to the surface on which the semiconductor element is mounted).
  • a resist pattern 3 for forming a backside die pad 8 for releasing heat from the element was formed.
  • the resist pattern 3 will be described in detail with reference to FIGS.
  • a pattern of a surface die pad 7 for mounting a semiconductor element was disposed.
  • the surface die pad 7 since the surface die pad 7 also plays a role of releasing heat generated by the semiconductor element to the outside, the surface die pad 7 basically passes through the metal substrate 1 and reaches the back surface.
  • the size of the outer periphery is slightly changed to taper the cross section of the surface die pad 7 and increase the contact area with the insulating resin portion 9 to improve adhesion.
  • the resist pattern 3 is formed as the back die pad 8 without changing the center position.
  • the patterns of the suspension leads 19 extending radially are arranged in the directions of the nearest four corners of one piece of the substrate.
  • the resist pattern 3 is not formed at a position corresponding to the suspension lead 19 on the back surface.
  • the pattern of the suspension leads 19 is connected to the tie bar 20 at a position on the outer periphery of one piece of the substrate.
  • the tie bar 20 has the same position as the outer periphery of one piece of the substrate.
  • the thickness of the tie bar 20 is halfway in the thickness direction of the metal substrate 1, and the resist pattern 3 corresponding to the back surface is not formed.
  • the resist pattern 3 of the leads 4 was arranged on the surface in a reverse radial manner in the direction of the surface die pad 7 in a state of being connected from the tie bar 20.
  • the lead 4 extends in the direction of the surface die pad 7 but is not connected to the surface die pad 7.
  • the thickness of the lead 4 was set smaller than the thickness of the metal substrate 1, and the resist pattern 3 of the lead 4 was not formed at the corresponding position on the back surface.
  • the lead 4 arrange
  • the resist pattern 3 of the electrode pad 5 is disposed at the end connected to the tie bar 20 among both ends of the lead 4.
  • the thickness of the electrode pad 5 was the same as the thickness of the metal substrate 1.
  • the resist pattern 3 of the lead 4 also serves as the electrode pad 5 (the back surface thereof).
  • the resist pattern 3 was arranged in a rectangular shape with rounded corners. After the formation of the resist pattern 3, etching was performed from both surfaces of the metal substrate 1 using a ferric chloride solution (see FIG. 7D).
  • the depth to be etched when etching was performed from one side of the metal substrate 1, conditions were set so that the thickness of the metal substrate 1 was 200 ⁇ m to 90 ⁇ m, and then both surfaces were etched simultaneously. At that time, the specific gravity of the ferric chloride solution was 1.38, and the temperature was 50 ° C. Further, the resist peeling after the etching was not performed, and the process proceeded to the insulating resin portion forming step by the next transfer molding method while leaving the resist pattern 3 left. By the etching process, the surface die pad 7, the lead 4, the suspension lead 19, and the tie bar 20 are formed on the surface of the metal substrate 1, and the back die pad 8 and the electrode pad 5 are formed on the back surface of the metal substrate 1. It was done.
  • the metal substrate 1 was cut so as to fit in a predetermined position of the mold for filling the insulating resin by the transfer mold method. As a result of the cutting, the metal substrate 1 became a strip-shaped frame (lead frame) having a width of 90 mm and a length of 300 mm.
  • the lead frame metal substrate 1
  • the lead frame metal base 1
  • the lower mold 22 is formed with a recess having the same depth as the thickness of the lead frame and substantially the same (slightly larger) in plan view, and a groove for introducing a resin connected to the recess.
  • the upper mold 21 having a polished horizontal surface as a surface in contact with the lead frame is put on and the mold is clamped.
  • a solid epoxy resin insulating resin
  • the upper mold 21 was opened after the insulating resin was solidified, and the lead frame filled with the insulating resin was taken out from the lower mold 22. Since the insulating resin remaining in the flow path for guiding the insulating resin from the outside of the mold to the inside of the mold and the recess in the mold is solidified and adhered to the lead frame, Removed manually. Subsequently, post-baking was performed to completely solidify the insulating resin filled in the lead frame. As a post-bake condition, heating was performed in an oven at 150 ° C. for 2 hours. In the lead frame in this state, the insulating resin fills the metal removal portion of the lead frame in a substantially flush state, but slight exudation to the substrate surface in the mold is almost inevitable.
  • the melted insulating resin 23 that has oozed out in the mold becomes a resin burr 24 and is very thin and adheres to each part of the resist pattern 3 on the lead frame.
  • This resin burr 24 must be removed because it causes a defect in the connection after the subsequent plating process or the lead frame substrate with resin is completed and the semiconductor element is mounted. In Example 1, the removal was performed by peeling off the resist pattern 3.
  • the pattern removal process was performed following the insulating resin filling process and post-baking.
  • an alkaline solution 400 g of NaOH / 1 L as a main component
  • a stripping solution heated to 95 ° C.
  • the conveying speed is set so that the residence time is 3 minutes. Adjusted.
  • the stripping solution not only strips the resist pattern 3 but also has an effect of promoting swelling of the epoxy resin on the resist pattern 3 as the resin burr 24.
  • continuous high-pressure water washing with a water pressure of 10 MPa was performed for 1 minute on the inline device, and the resist pattern 3 was washed away together with the resin burr 24.
  • each lead frame (lead frame with resin) according to Example 1 was formed.
  • Example 1 an electroless nickel / palladium / gold plating forming method that does not require a supply electrode is employed.
  • the exposed metal surface is subjected to acidic degreasing, soft etching, acid cleaning, palladium catalyst activation treatment, pre-dip, electroless nickel plating, electroless palladium plating, and electroless gold plating to form a plating layer 10 did.
  • the thickness of each layer included in the plating layer 10 is 3 ⁇ m for nickel, 0.2 ⁇ m for palladium, and 0.03 ⁇ m for gold.
  • the thickness of the plating layer 10 is the sum of the above layers. It was.
  • the plating solution used is Enplate NI (made by Meltex), palladium is Paulobond EP (made by Rohm and Haas), and gold is Paulobond IG (made by Rohm and Haas).
  • the metal portion of the lead frame with resin is lower than the surrounding insulating resin portion 9 by the thickness of the resist film. In this stage, it is in a state of being recessed from the surrounding insulating resin portion 9 by about 7 ⁇ m.
  • a desired resin-attached lead frame substrate RFB was obtained by the procedure described above.
  • FIG. 12 sectional drawing showing the positional relationship of the plating layer 10 with which the lead frame board
  • Example 1 as a means for removing a predetermined metal portion of the lead frame with resin, a step of forming an insulating resin portion 9 using etching by forming a resist pattern in addition to the portion to be removed is further provided. This was performed with the resist pattern 3 left. With this manufacturing method, as shown in FIG. 11, the resin burr 24 generated in the transfer molding method runs on the resist film on the metal part, but the pattern is formed after filling and curing the insulating resin. In the removing step, the resist pattern 3 is removed.
  • the insulating resin portion 9 is molded to have the same height as the surface of the resist film on the metal portion. For this reason, in the insulating resin part 9, after the resist is stripped, the height of the metal part is lower than that of the insulating resin part 9 by the thickness of the resist film.
  • the thickness of the resist pattern 3 was 3 ⁇ m or more. This is because if the thickness of the resist pattern 3 is less than 3 ⁇ m, the resist pattern 3 does not play a role during etching.
  • the generated resin burr 24 runs on the resist film.
  • the resin-attached lead frame substrate RFB according to the first embodiment prevents plating defects due to burrs remaining. That is, with the method for manufacturing the leadframe substrate RFB with resin according to the first embodiment, it is possible to provide a simple and reliable method for removing the resin burr 24 in the manufacturing process of the leadframe substrate with resin RFB.
  • Example 2 In Example 2, the metal portion exposed on the front surface and the reverse surface, which is the opposite surface, was plated on the sample of Example 1.
  • the metal part was made higher than the upper surface of the insulating resin part 9.
  • the connection area of the solder ball 6 and the connection pad is widened, and the connection strength and the shear strength are improved.
  • the height relationship between the metal part and the insulating resin part 9 is opposite to the structure of the first embodiment, but the structural features required to obtain connection reliability are the pattern of the substrate and the substrate. It depends on the structure of the entire package, the mounting conditions of the elements, the usage environment of the package, and the like. For this reason, as described above, the metal part is made lower than the insulating resin part 9, and then the height of the metal part can be adjusted by the thickness of the plating layer 10 as necessary. Is effective.
  • Comparative Example 1 In Comparative Example 1, the thickness of the resist film was set to 5 ⁇ m in forming the resist pattern 3 on the metal substrate 1. Further, the thickness of each layer included in the plating layer 10 is 5 ⁇ m for nickel, 0.2 ⁇ m for palladium, and 0.03 ⁇ m for gold. The total value was used. As a result, on the surface of the lead frame with resin, the upper surface of the metal part and the upper surface of the insulating resin part 9 were almost the same height. Otherwise, the resin-attached lead frame substrate RFB was obtained using the same method as in Example 1. In addition, in FIG. 14, sectional drawing showing the positional relationship of the plating layer 10 with which the lead frame board
  • Comparative Example 2 In Comparative Example 2, the thickness of the resist film was set to 5 ⁇ m in forming the resist pattern 3 on the metal substrate 1. Further, the thickness of each layer included in the plating 10 is 8 ⁇ m for nickel, 0.2 ⁇ m for palladium, and 0.03 ⁇ m for gold, and the thickness of the plating layer 10 is the sum of the above layers. Value. As a result, the upper surface of the metal part slightly protruded from the upper surface of the insulating resin part 9 on the surface of the lead frame with resin. Otherwise, the resin-attached lead frame substrate RFB was obtained using the same method as in Example 1. In addition, in FIG. 15, sectional drawing showing the positional relationship of the plating layer 10 with which the lead frame board
  • Comparative Example 3 In Comparative Example 3, the resist was peeled after the etching process of the metal substrate 1. The peeling conditions are the same as in Example 1. Then, resin filling by a transfer mold method was performed, and the subsequent resist peeling process was not performed. Otherwise, the resin-attached lead frame substrate RFB was obtained using the same method as in Example 1. In addition, in FIG. 16, sectional drawing showing the positional relationship of the plating layer 10 with which the lead frame board
  • an evaluation element was mounted on the lead frame substrate with resin RFB of each example and each comparative example.
  • the evaluation in this case relates to the connection between the lead frame substrate with resin RFB and the mother board by solder balls.
  • the evaluation element mounted on the lead frame substrate with resin RFB has the same external shape and material as that of a normal element, and the internal wiring only connects terminals.
  • the element for evaluation is mounted on the die pad of the lead frame substrate with resin RFB using a die attach film, and is further electrically connected to the substrate by wire bonding using a gold wire with a diameter of 25 ⁇ m. It was.
  • the evaluation element was resin-sealed by a transfer mold method to obtain a semiconductor package.
  • solder balls having a radius of 300 ⁇ m were placed thereon, and solder bumps were formed through a reflow furnace.
  • the test for continuity after the secondary mounting was performed by examining between two points on the terminals of the motherboard, and by selecting these two points, the design was made so that continuity and breakage for any solder bump could be seen.
  • initial evaluation it was confirmed that all the solder bumps were electrically connected, and only the samples judged to have no initial failure were put into TCT (temperature cycle test).
  • TCT temperature cycle test
  • the TCT conditions were 1000 cycles by switching between ⁇ 55 ° C. and 125 ° C. for 10 minutes each.
  • the conduction of each bump was examined again.
  • the sample was hardened with an epoxy resin, the cross section was polished, and the destruction and peeling of the solder were observed.
  • Example 1 in which the metal part including the plating layer is lower than the surrounding insulating resin part 9, the solder balls can be reliably arranged. Moreover, in the evaluation of the samples that have been performed up to the secondary mounting, it is more reliable that the metal part including the plating layer protrudes from the surrounding insulating resin part 9 as in Comparative Example 2 or Comparative Example 3. Is high. This is because, as shown in FIG. 13, when the solder bumps are formed, they are in close contact with the side surfaces of the protruding metal part to increase the bonding area.
  • Example 1 Even in Example 1, the number of defects is zero, but this is different from the above reason.
  • the presence of the insulating resin wall around the electrode is based on the connection reliability in the current material configuration and substrate structure. This is because it worked to improve sex. If the material structure and the substrate structure are different, the relationship between the height of the metal part and the connection reliability may be different from this time, and the height of the metal part may be changed from the insulating resin part 9 before plating. It is preferable that the height be adjusted so that the height can be adjusted in the subsequent plating step depending on the situation.
  • the resin-attached lead frame substrate and the manufacturing method thereof according to one aspect of the present invention can solve the problems to be solved by the present invention.
  • Various kinds of memories, semiconductors such as CMOS, CPU, and FPGA manufactured by the wafer process have terminals for electrical connection.
  • the pitch of the electrical connection terminals and the pitch of the connection parts on the printed circuit board side where the semiconductor elements are mounted differ by about 1 to 2 digits due to the difference in the construction method. Therefore, an intermediary substrate (semiconductor element mounting substrate) for pitch conversion called an interposer is used.
  • FIG. 17 is a diagram schematically showing the structure of a QFN (Quad Flat Non-leaded) type lead frame as an example of an interposer.
  • the semiconductor element 11 is fixed to a predetermined portion of the lead frame affixed to the holding material 14 made of polyimide tape with the fixing resin 16 or the fixing tape. .
  • wire bonding is performed, and a plurality of chips (semiconductor elements 11) are collectively resin-molded by a transfer molding method.
  • exterior processing is performed, and individual products are cut and cut into finished products.
  • the QFN type lead frame is provided with a flat portion 12 on which the semiconductor element 11 is mounted at the center portion of a lead frame made of metal such as copper or aluminum, and has a pitch on the outer peripheral portion.
  • a wide lead 4 (not shown) is provided.
  • a bonding method using a metal wire 13 such as a gold wire is used for connection between the lead 4 and the electrical connection terminal of the semiconductor element 11.
  • the holding member 14 shown in FIGS. 17A and 17B holds the lead frame, and as shown in FIG. 17C, an insulating resin (molding resin 17) is used. It is removed after molding.
  • the interposer shown in FIG. 17 can be electrically connected only between the outer periphery of the semiconductor element and the outer periphery of the lead frame.
  • the connection between the printed board and the interposer is performed by attaching a metal pin to the take-out electrode 15 of the extension part of the interposer.
  • solder balls are arranged in an array (Ball Grid Array) on the external connection terminals on the outer peripheral portion. Since the connection pitch on the printed circuit board side is as wide as about 500 ⁇ m and the amount of solder is large, the Ball Grid Array is capable of stable and reliable connection. For semiconductor devices with a small area and a large number of terminals, it is difficult to change the pitch with an interposer with a single electrical path, so layers with electrical paths are laminated in two or three layers. ing.
  • connection terminals of the semiconductor element are often formed in an array on the bottom surface of the semiconductor element.
  • the external connection terminals on the interposer side are also arranged in the same array, and a flip chip connection method using minute solder balls is adopted for the connection between the interposer and the printed circuit board.
  • the wiring in the interposer is drilled or drilled in the vertical direction from the upper part, and metal plating is performed in the hole, so that electrical conduction is made up and down.
  • the pitch of the external connection terminals can be miniaturized to a range of 150 ⁇ m or more and 200 ⁇ m or less, so that the number of connection terminals can be increased, but the reliability and stability of bonding are lowered. For this reason, this type of interposer is not suitable for in-vehicle use or the like where high reliability is required.
  • such an interposer has a ceramic base material for holding the lead frame part, or a P-BGA (Plastic Ball Grid Array), CSP (Chip Size Package), LGA (Land).
  • P-BGA Physical Ball Grid Array
  • CSP Chip Size Package
  • LGA Land
  • base materials such as organic ones such as (Grid Array) and the like, and they are properly used according to the purpose.
  • the pitch of the terminal portion needs to be in the range of 80 ⁇ m to 100 ⁇ m.
  • the lead frame which is also a conductive portion and supporting member, is formed by a so-called photoetching method, which is manufactured by etching a thin metal plate.
  • the metal plate has a thickness of about 200 ⁇ m.
  • the required minimum thickness of the metal plate is about 200 ⁇ m. In that case, it is preferable to perform etching from both sides of the metal plate.
  • the holding material 14 made of polyimide tape that covers the back surface 18 of the lead frame (the surface opposite to the surface on which the semiconductor element 11 is mounted) is used when the back surface 18 of the lead frame serves as a connection surface with the printed circuit board. In order to prevent the molding resin 17 from wrapping around and adhering to the connection terminal surface on the back surface of the lead during molding, it is indispensable.
  • the holding material 14 made of polyimide tape is unnecessary in the end, it is removed and discarded after molding. Therefore, the method of manufacturing the interposer by attaching the lead frame to the holding material 14 has a problem that it is costly.
  • a lead frame type substrate that is formed by forming irregularities or through holes on both sides of a metal plate using pattern etching, half etching, etc., and molding an insulating resin on the formed portion.
  • the substrate having this structure since the insulating resin has a function of supporting the wiring pattern, it is not necessary to attach a polyimide tape, and it is possible to realize cost reduction.
  • connection reliability when mounting an element on an electronic board formed as described above, if the height of the metal part (wiring pattern) and the insulating resin part are aligned as in the prior art, from the viewpoint of connection reliability and the like. , Often undesired.
  • solder balls are formed on the connection pads on the back surface of the lead frame substrate with resin and solder bumps are formed through a reflow process, if the connection pads and the insulating resin portion around them are on the same plane, the solder The ball is likely to fall off, and the possibility of impairing connection reliability increases.
  • the lead frame substrate with resin according to the prior art has a problem that the connection reliability between the lead frame substrate with resin and the solder ball may be lowered.
  • the resin-equipped lead frame substrate FRB has Insulation between the lead frame 25 including the wiring pattern portion (for example, the lead 4, the electrode pad 5, the front surface die pad 7, and the back surface die pad 8) formed by removing the metal so that the plate thickness is reduced, and the portion from which the metal is removed And an insulating resin portion 9 formed by substitution with resin.
  • the height of the insulating resin portion 9 is 3 ⁇ m or more higher than the height of the wiring pattern portion.
  • connection pad portion for example, the electrode pad 5, the front surface die pad 7, the back surface die pad 8 which is a part of the wiring pattern portion on the surface of the lead frame substrate with resin FRB is set to be around. It becomes possible to make it lower than the insulating resin part 9. For this reason, the resin-attached lead frame substrate FRB according to the present embodiment can improve the connection reliability with the solder.
  • the manufacturing method of the lead frame substrate with resin removes the metal from a part of at least one surface of the metal base 1 so that the plate thickness of the metal base 1 decreases.
  • a wiring pattern forming step for forming a predetermined wiring pattern, and an insulating resin portion 9 that is higher than the height of the wiring pattern portion on which the wiring pattern of the metal substrate 1 is formed is replaced with an insulating resin in the portion where the metal is removed.
  • Insulating resin filling step for filling 23, and a molten insulating resin solidifying step for solidifying the insulating resin 23 filled in the insulating resin filling step With such a configuration, the height of the connection pad portion described above can be made lower than that of the surrounding insulating resin portion 9 on the surface of the lead frame substrate with resin FRB. For this reason, if it is the manufacturing method of the lead frame board
  • the insulating resin portion forming step may include a pattern removing step of removing the resist pattern 3 after solidifying the insulating resin 23 filled in the cavity with the resist pattern 3 left.
  • the resin burr 24 generated during the insulating resin portion forming step can be reliably removed together with the resist pattern 3 in the pattern removing step. For this reason, it is possible to prevent plating defects due to burrs remaining. Therefore, the method for manufacturing the resin-attached lead frame substrate RFB according to the present embodiment can provide a simple and reliable method for removing the resin burr 24 in the process of manufacturing the resin-attached lead frame substrate RFB.
  • the thickness (film thickness) of the resist pattern 3 may be 3 ⁇ m or more.
  • the resist pattern 3 can serve as a mask (function) in etching. If the thickness of the resist pattern 3 is less than 3 ⁇ m, it may not serve as a mask for the resist pattern 3 during etching.
  • the height of the connection pad portion, which is a part of the wiring pattern portion can be made 3 ⁇ m or more lower than the surrounding insulating resin portion 9 on the surface of the lead frame substrate with resin FRB. It becomes. For this reason, if it is the manufacturing method of the lead frame board
  • the manufacturing method of the lead frame substrate with resin according to the present embodiment may include a plating layer forming step of forming the plating layer 10 on the wiring pattern portion after the insulating resin portion forming step.
  • a plating layer forming step of forming the plating layer 10 on the wiring pattern portion after the insulating resin portion forming step it is possible to adjust the height of the connection pad portion, which is a part of the wiring pattern portion, to be higher than that of the surrounding insulating resin portion 9 by plating.
  • Even with such a method of manufacturing a resin-attached lead frame substrate FRB it is possible to provide a resin-attached lead frame substrate with improved connection reliability with solder.
  • the present invention relates to a semiconductor substrate for mounting a semiconductor element, and can be used particularly for a lead frame type substrate and a manufacturing method thereof.
  • SYMBOLS 1 Metal base material, 2 ... Photosensitive resist, 3 ... Resist pattern, 4 ... Lead, 5 ... Electrode pad, 6 ... Solder ball, 7 ... Front surface die pad, 8 ... Back surface die pad, 9 ... Insulating resin part, 10 ... Plating Layer 11, semiconductor element 12, flat portion 13, metal wire 14, holding material 15, take-out electrode 16, fixing resin, 17 resin for molding, 18 back surface of lead frame, 19, suspended lead 20 ... Tie bar, 21 ... Upper mold, 22 ... Lower mold, 23 ... Molten insulating resin, 24 ... Resin burr, 25 ... Lead frame, RFB ... Lead frame substrate with resin

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Lead Frames For Integrated Circuits (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)

Abstract

L'invention concerne : un substrat de grille de connexion lié à la résine permettant d'améliorer la fiabilité de connexion avec la brasure ; et un procédé de fabrication du substrat de grille de connexion lié à la résine. Un substrat de grille de connexion (FRB) lié à la résine selon la présente invention comporte : une grille de connexion (25) qui comporte une section de motif de circuit, laquelle est formée en retirant un métal d'une partie d'au moins une surface d'un matériau de base (1) de métal de sorte que l'épaisseur de carte du matériau de base (1) de métal soit réduite ; et une section de résine isolante (9) qui est formée d'une résine isolante se substituant à une partie dans laquelle le métal est retiré. La hauteur de la section de résine isolante (9) est supérieure de 3 µm ou plus à celle de la section de motif de circuit.
PCT/JP2015/002757 2014-06-24 2015-06-01 Substrat de grille de connexion lié à la résine et son procédé de fabrication WO2015198533A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014-129109 2014-06-24
JP2014129109A JP2016009746A (ja) 2014-06-24 2014-06-24 樹脂付リードフレーム基板及びその製造方法

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WO2015198533A1 true WO2015198533A1 (fr) 2015-12-30

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JP (1) JP2016009746A (fr)
TW (1) TW201606950A (fr)
WO (1) WO2015198533A1 (fr)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010116622A1 (fr) * 2009-03-30 2010-10-14 凸版印刷株式会社 Procédé de fabrication de substrat pour élément semiconducteur et dispositif semiconducteur
WO2010137899A2 (fr) * 2009-05-27 2010-12-02 Lg Innotek Co., Ltd. Grille de connexions et son procédé de fabrication

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010116622A1 (fr) * 2009-03-30 2010-10-14 凸版印刷株式会社 Procédé de fabrication de substrat pour élément semiconducteur et dispositif semiconducteur
WO2010137899A2 (fr) * 2009-05-27 2010-12-02 Lg Innotek Co., Ltd. Grille de connexions et son procédé de fabrication

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JP2016009746A (ja) 2016-01-18

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