WO2015198388A1 - Film de conversion photoélectrique et dispositif de capture d'image le comportant - Google Patents

Film de conversion photoélectrique et dispositif de capture d'image le comportant Download PDF

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Publication number
WO2015198388A1
WO2015198388A1 PCT/JP2014/066645 JP2014066645W WO2015198388A1 WO 2015198388 A1 WO2015198388 A1 WO 2015198388A1 JP 2014066645 W JP2014066645 W JP 2014066645W WO 2015198388 A1 WO2015198388 A1 WO 2015198388A1
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Prior art keywords
layer
generation layer
photoelectric conversion
light
carrier
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PCT/JP2014/066645
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English (en)
Japanese (ja)
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大島　清朗
亮太 田中
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パイオニア株式会社
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Priority to PCT/JP2014/066645 priority Critical patent/WO2015198388A1/fr
Publication of WO2015198388A1 publication Critical patent/WO2015198388A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors

Definitions

  • the present invention relates to a photoelectric conversion film that generates an optical carrier (electron / hole pair) according to the amount of incident light and doubles the generated optical carrier, and an imaging apparatus including the photoelectric conversion film.
  • an optical carrier electron / hole pair
  • Each of these photoelectric conversion films includes a plurality of semiconductor layers mainly composed of amorphous selenium (a-Se) and selectively added with arsenic (As), tellurium (Te), lithium fluoride (LiF), and the like. It consists of
  • the photoelectric conversion film (Example 8) of Patent Document 1 has a photocarrier generation layer that absorbs incident light and generates a photocarrier, and a charge multiplication layer that multiplies the generated photocarrier. .
  • amorphous semiconductor layers are laminated in the order of Se + LiF layer and Se + Te layer from the light incident side.
  • the photoelectric conversion film (Example 4) of Patent Document 2 has a P-type photoconductive film sensitized portion, and the P-type photoconductive film sensitized portion has a Se + As + LiF layer, a Se + As + Te + LiF layer, and a Se + As + GaF three layer from the light incident side.
  • a four-layer structure is formed in the order of Se + As layers.
  • the photoelectric conversion film (first embodiment) of Patent Document 3 has a hole injection blocking auxiliary layer, a photocarrier generation layer, and a carrier multiplication layer.
  • the hole injection blocking auxiliary layer is Se + As + LiF
  • the photocarrier generation layer is It is composed of Se + Te.
  • the photoelectric conversion film of Patent Document 4 has a P-type photoconductive film, and has a four-layer structure in the order of Se + As layer, Se + Te + As + LiF layer, Se + Te + As layer, and Se + As layer from the light incident side.
  • lithium fluoride has an electric field relaxation effect that suppresses the electric field on the voltage application side lower than the stack position.
  • optical carriers are mainly generated in front of the Se + LiF layer, and avalanche doubling of the generated optical carriers is mainly performed by a strong electric field behind.
  • photoelectric conversion generation of optical carriers
  • long wavelength light green light and red light
  • avalanche doubling even if the avalanche doubling is appropriately performed, there is a problem that the relative sensitivity of the long wavelength light to the short wavelength light (blue light) is lowered.
  • An object of the present invention is to provide a photoelectric conversion film capable of shifting to avalanche doubling after sufficiently performing long-wavelength photoelectric conversion, particularly of green light or more, and an imaging device including the photoelectric conversion film.
  • Each of the photoelectric conversion films of the present invention is mainly composed of amorphous selenium, a carrier generation layer that generates a photocarrier according to the amount of incident light, a carrier multiplication layer that doubles the generated optical carrier,
  • the carrier generation layer has a first partial generation layer to which lithium fluoride is added at a position deeper than the penetration depth of substantially green light from the front end position of the light incident layer. It is characterized by.
  • the first partial generation layer is preferably disposed in the immediate vicinity of the carrier multiplication layer.
  • the first partial generation layer is disposed at a distance of 0.2 ⁇ m or more and 3.0 ⁇ m or less from the front end position of the layer.
  • the carrier generation layer has a second partial generation layer to which at least one of tellurium, antimony, cadmium, and bismuth is added, and the second partial generation layer is located at a layer front end position than the first partial generation layer. It is preferable to arrange on the side.
  • tellurium is added to the second partial generation layer, and the concentration of the added tellurium is 0.5 wt% or more and 10.0 wt% or less.
  • the carrier generation layer preferably has a third partial generation layer to which arsenic is added, and the third partial generation layer is preferably disposed closer to the layer front end position than the second partial generation layer.
  • the carrier generation layer may have a fourth partial generation layer to which lithium fluoride and arsenic are added instead of the first partial generation layer.
  • Another photoelectric conversion film of the present invention includes a first individual generation layer, a second individual generation layer, and a third individual generation layer from the light incident side, each of which includes a carrier generation layer mainly composed of amorphous selenium.
  • the first individual generation layer includes arsenic added to amorphous selenium
  • the second individual generation layer includes tellurium added to amorphous selenium
  • the third individual generation layer includes amorphous.
  • Lithium fluoride is added to selenium.
  • the imaging device of the present invention faces a light receiving substrate portion having a light-transmitting substrate, a transparent electrode, and the above-described photoelectric conversion film, and faces the light receiving substrate portion in a vacuum space, and emits electrons toward the photoelectric conversion film.
  • An electron-emitting device array, and an electron-emitting substrate portion having a drive circuit for driving the electron-emitting device array are provided.
  • FIG. 1 It is a cross-sectional schematic diagram of the imaging device according to the embodiment. It is a block diagram of the photoelectric conversion film which concerns on 1st Embodiment. It is a component distribution map of the photoelectric conversion film concerning a 1st embodiment.
  • This photoelectric conversion film is a so-called HARP (High-gain Avalanche Rushing amorphous Photoconductor) film, and constitutes an imaging device (imaging device) in combination with a HEED (High-efficiency Electron Emission Device) cold cathode array that constitutes an electron emission source. To do.
  • HARP High-gain Avalanche Rushing amorphous Photoconductor
  • HEED High-efficiency Electron Emission Device
  • FIG. 1 is a schematic cross-sectional view of an imaging apparatus according to an embodiment.
  • an imaging device 100 is arranged so as to face an electron emission substrate portion 101 having an electron emission element array 102 and an electron emission substrate portion 101 with a vacuum space 103 therebetween, and a photoelectric conversion layer 10 (photoelectric conversion). And a mesh electrode 105 disposed in the vacuum space 103 between the electron emission substrate portion 101 and the light receiving substrate portion 104.
  • the electron emission substrate 101 emits electrons as a surface electron emission source, and the mesh electrode 105 controls the trajectory of electrons (electron beams) emitted from the electron emission substrate 101 and accelerates the electrons.
  • the light receiving substrate unit 104 receives light to be imaged and becomes a target for electrons emitted from the electron emission substrate unit 101.
  • the electron-emitting substrate unit 101 includes a back substrate 111 made of silicon or the like, a drive circuit layer 112 formed on the back substrate 111, and an electron-emitting device array 102 formed on the drive circuit layer 112. is doing.
  • An active matrix drive circuit 113 (switching circuit) is formed in the drive circuit layer 112.
  • a horizontal scanning circuit (driver) and a vertical scanning circuit (driver) that control driving of the active matrix driving circuit 113 are disposed in the peripheral portion of the back substrate 111. Then, the plurality of electron-emitting devices 102 a of the electron-emitting device array 102 are driven dot-sequentially by the horizontal scanning circuit and the vertical scanning circuit via the active matrix driving circuit 113.
  • electrons electron beams
  • the emitted electrons are combined with the hole pattern of the photoelectric conversion layer 10 (details will be described later).
  • the mesh electrode 105 is formed of a metal plate or the like having a plurality of openings, and controls the trajectory of electrons emitted from the electron-emitting device array 102 and accelerates electrons toward the photoelectric conversion layer 10.
  • the mesh electrode 105 absorbs surplus electrons. For this reason, a voltage that is significantly higher than the drive voltage of the drive circuit layer 112 is applied to the mesh electrode 105.
  • Electrons emitted from the electron emission substrate 101 are drawn out to the photoelectric conversion layer 10 side by the voltage applied to the mesh electrode 105, and also due to an electric field generated between the electron emission element array 102 and the photoelectric conversion layer 10. And converged on the back surface of the photoelectric conversion layer 10. The emitted electrons are combined with the hole pattern of the photoelectric conversion layer 10.
  • the light receiving substrate unit 104 includes a light transmitting side light transmitting substrate 121, a transparent electrode layer 122 formed on the back surface (lower surface) of the light transmitting substrate 121, and the photoelectric conversion layer 10 formed on the back surface of the transparent electrode layer 122. And a landing auxiliary layer 123 formed on the back surface of the photoelectric conversion layer 10.
  • the light receiving substrate unit 104 also includes a circuit for supplying signals and voltages necessary for driving, a circuit for outputting the detected video signal, and the like.
  • the translucent substrate 121 is made of glass or the like that is transparent to visible light when the object to be imaged is visible light, sapphire or quartz glass or the like when it is ultraviolet light, and beryllium or the like when it is X-ray. Is formed.
  • the transparent electrode layer 122 is made of indium oxide (In 2 O 3 ) or the like.
  • the photoelectric conversion layer 10 is formed of a semiconductor layer mainly composed of amorphous selenium (a-Se) (details will be described later). Further, the landing auxiliary layer 123 is made of antimony sulfide (Sb 2 S 3 ) or the like.
  • the generated holes are accelerated by a strong electric field applied to the transparent electrode layer 122 and continuously collide with atoms constituting the photoelectric conversion layer 10 to generate new electron / hole pairs (avalanche multiplication). .
  • the avalanche-multiplied holes are accumulated near the back surface of the photoelectric conversion layer 10 to form a hole pattern corresponding to the incident light image. And the electric current at the time of combining this hole pattern and the electron discharge
  • FIG. 2 shows the light receiving substrate 104 in a horizontal direction, and here, the description will proceed with the front side as “front” and the back side as “rear” with respect to the incident direction of light (indicated by arrows).
  • the light receiving substrate unit 104 includes the light transmitting substrate 121, the transparent electrode layer 122, the photoelectric conversion layer 10, and the landing auxiliary layer 123 in this order from the front side (incident side).
  • the photoelectric conversion layer 10 includes a carrier generation layer 11 that generates optical carriers (electron / hole pairs) according to the amount of incident light, and a carrier multiplication layer 12 that doubles the generated optical carriers by avalanche. I have. Needless to say, the carrier generation layer 11 is disposed on the transparent electrode layer 122 side, and the carrier multiplication layer 12 is disposed on the landing auxiliary layer 123 side.
  • Both the carrier generation layer 11 and the carrier multiplication layer 12 are formed of a semiconductor layer mainly composed of amorphous selenium (a-Se).
  • the carrier generation layer 11 includes, in order from the front side, a front generation layer 21 in which arsenic (As) is added to selenium (Se) (a-Se + As layer: third partial generation layer: first individual generation layer), selenium.
  • Intermediate part generation layer 22 (a-Se + Te layer: second partial generation layer: second individual generation layer) with tellurium (Te) added to (Se), and lithium fluoride (LiF) added to selenium (Se)
  • a rear generation layer 23 (a-Se + LiF layer: first partial generation layer: third individual generation layer).
  • FIG. 3 shows the component distribution of the carrier generation layer 11 and the carrier multiplication layer 12 configured as described above.
  • the carrier generation layer 11 and the carrier multiplication layer 12 constituting the photoelectric conversion layer 10 are continuously formed by a vacuum deposition method.
  • vapor deposition nozzles for selenium (Se), arsenic (As), tellurium (Te), and lithium fluoride (LiF) are prepared, respectively.
  • the deposition nozzles for arsenic (As), tellurium (Te), and lithium fluoride (LiF) are selectively driven. Be filmed.
  • the photoelectric conversion layer 10 of the first embodiment includes an a-Se + As layer (front generation layer 21) having a thickness of 1000 mm from the front layer end position F to the rear layer end position, and a film An a-Se layer having a thickness of 500 mm, an a-Se + Te layer having a thickness of 2000 mm (intermediate generation layer 22), an a-Se layer having a thickness of 500 mm, and an a-Se + LiF layer having a thickness of 800 mm (rear generation layer 23) A carrier generation layer 11 is formed.
  • a carrier multiplication layer 12 made of an a-Se layer is formed after the carrier generation layer 11. And the film thickness of the whole photoelectric converting layer 10 is about 4 micrometers.
  • the a-Se + LiF layer (rear generation layer 23) is disposed in front of the carrier multiplication layer 12.
  • the a-Se + Te layer (intermediate generation layer 22) is arranged on the front side of the front end position F, which is in front of the rear generation layer 23, and the a-Se + As layer (front generation layer 21) is the intermediate generation layer 22. It is arrange
  • the a-Se + LiF layer (rear generation layer 23) is disposed at a distance of 0.2 ⁇ m or more and 3.0 ⁇ m or less from the front end position F of the layer, and has a film thickness of 500 mm or more and 1000 mm or less. Is preferred.
  • the rear generation layer 23 of the first embodiment is disposed at a distance of 0.4 ⁇ m from the layer front end position F, and has a layer thickness of 800 mm.
  • the a-Se + Te layer (intermediate portion generation layer 22) is preferably arranged at a distance of 0 mm or more from the front end position F of the layer and has a thickness of 500 mm or more and 2.0 ⁇ m or less.
  • the intermediate portion generation layer 22 of the first embodiment is disposed at a distance of 0.15 ⁇ m from the layer front end position F, and has a layer thickness of 2000 mm.
  • Tellurium (Te) also becomes a nucleus of selenium crystallization as an impurity of (Se) of selenium, and “white scratches” (white spot-like defects: electric field concentration occurs in a portion where the resistance is reduced by partial crystallization of selenium. Which occurs and causes a white glow). For this reason, it is preferable to keep the tellurium concentration low in the intermediate portion generation layer 22. That is, in the intermediate portion generation layer 22, the tellurium concentration is preferably 0.5 wt% or more and 10.0 wt% or less. In the intermediate generation layer 22 of the first embodiment, the tellurium concentration is about 2.5 wt%.
  • lithium fluoride (LiF) added (doped) to the a-Se + LiF layer (rear generation layer 23) forms a hole trap level and blocks holes from the transparent electrode layer 122.
  • this prevention effect is that LiF is arranged in the vicinity of the front end position F of the photoelectric conversion layer 10 (carrier generation layer 11) as in the prior art. Even if it is not done, it is considered to be achieved by making the interface state between the transparent electrode layer 122 and the photoelectric conversion layer 10 appropriate.
  • LiF has an electric field relaxation effect in front of the light penetration direction.
  • avalanche doubling is suppressed and light carrier generation is mainly performed in each of the layers ahead of the a-Se + LiF layer (rear generation layer 23).
  • an avalanche doubling of the generated optical carrier is mainly caused by a strong electric field. That is, the carrier generation layer 11 is configured forward from the rear end of the a-Se + LiF layer (rear generation layer 23), and the carrier multiplication layer 12 is configured rearward.
  • the front end position of the a-Se + LiF layer (rear generation layer 23) is a depth position of 0.4 ⁇ m from the layer front end position F. That is, an a-Se + LiF layer (rear generation layer 23) is formed at a depth position separated by 0.4 ⁇ m from the front end position F of the layer.
  • the light penetration depth which is the depth at which the light intensity is attenuated to 1 / e 2 , is about 0.1 ⁇ m for blue light (B: 440 nm), about 0.23 ⁇ m for green light (G: 540 nm), It is about 2.8 ⁇ m with red light (R: 620 nm).
  • an a-Se + LiF layer (rear generation layer 23) is disposed at a position deeper than the penetration depth of green light from the blue light. Therefore, in the photoelectric conversion layer 10 (carrier generation layer 11), at least blue light and green light photoelectric conversion (generation of optical carriers) is sufficiently performed due to the electric field relaxation effect. Further, the optical carriers generated in this way are avalanche multiplied by the subsequent carrier multiplication layer 12.
  • the photoelectric conversion layer 10 of the present embodiment has obtained a test result that the relative sensitivity of red light does not decrease in a high-temperature storage environment as follows.
  • FIG. 4 shows the test results of the primary conversion efficiency in high-temperature storage for the photoelectric conversion layer 10 (a) of the first embodiment and the photoelectric conversion film (b) of Patent Document 1 described above.
  • 50% white light is applied under a voltage condition that does not cause avalanche, and the luminance when a predetermined current flows is measured to evaluate the sensitivity.
  • the relative value is calculated by reference luminance / sample luminance.
  • the horizontal axis represents “heating time (h) at 50 ° C.”, and the vertical axis represents “sensitivity equivalent luminance value”, which represents the sensitivity in a high-temperature storage (acceleration) environment.
  • the a-Se + LiF layer (rear generation layer 23) in the carrier generation layer 11 is made to have a penetration depth of substantially green light (which is 0.2 ⁇ m). Since it is arranged at a deep position, the electric field relaxation region by LiF can be widened (long). Thereby, after sufficient photoelectric conversion of the imaging target light can be performed, avalanche multiplication can be performed, and an improvement in relative quantum efficiency (sensitivity improvement) of each color light of R, G, and B can be achieved. In particular, the quantum efficiency of green light can be improved as compared with the conventional one. In addition, the quantum efficiency of red light in a high-temperature storage environment can be improved, and the occurrence of “white scratches” can be suppressed.
  • tellurium (Te) is added to the intermediate portion generation layer 22, but antimony (Sb), cadmium (Cd), and bismuth (Bi), which have a lower band gap than selenium (Se). One or more of them may be added.
  • the photoelectric conversion layer 10A of 2nd Embodiment is demonstrated in detail.
  • the a-Se + As layer front generation layer 21
  • the carrier generation layer 11 is formed of an a-Se layer having a thickness of 3000 ⁇ and an a-Se + LiF layer (rear generation layer 23) having a thickness of 800 ⁇ .
  • the film thickness of the photoelectric conversion layer 10A including the carrier multiplication layer 12 is about 4 ⁇ m.
  • the a-Se + LiF layer (rear generation layer 23) is disposed in front of the carrier multiplication layer 12, and the front end position thereof is a depth of 0.4 ⁇ m from the layer front end position F. Further, the a-Se + Te layer (intermediate generation layer 22) is omitted, and the front end position F of the layer is coincident with the front end position of the a-Se + As layer (front generation layer 21).
  • the a-Se + LiF layer (rear generation layer 23) in the carrier generation layer 11 is deeper than the penetration depth of about green light (which is 0.2 ⁇ m). Since it is arranged at a position, the electric field relaxation region by LiF can be widened (long). Thereby, the quantum efficiency of green light can be improved. In this case, in the actual measurement value, the quantum efficiency of 550 nm wavelength light (green light) was improved by 1.7 times. In addition, the quantum efficiency of red light in a high-temperature storage environment can be improved, and the occurrence of “white scratches” can be suppressed.
  • the rear generation layer 23 may be an a-Se + Te + LiF layer containing tellurium (modified example).
  • the quantum efficiency of light having a wavelength of 550 nm (green light) is improved by 1.9 times.
  • the photoelectric converting layer 10B of 3rd Embodiment is demonstrated in detail.
  • an a-Se + As layer front generation layer 21 having a thickness of 1000 mm from the front end position F to the rear end position of the layer.
  • a carrier generation layer 11 comprising a layer 23B).
  • the film thickness of the photoelectric conversion layer 10B including the carrier multiplication layer 12 is about 4 ⁇ m.
  • the a-Se + As + LiF layer (rear generation layer 23B) is disposed in front of the carrier multiplication layer 12, and the front end position thereof is a depth of 0.4 ⁇ m from the front end position F of the layer. Further, the a-Se + Te layer (intermediate generation layer 22) is disposed on the layer front end position F side with respect to the rear generation layer 23B, and the a-Se + As layer (front generation layer 21) is more than the intermediate generation layer 22. It is arrange
  • the a-Se + As + LiF layer (rear generation layer 23B) in the carrier generation layer 11 is deeper than the penetration depth of about green light (which is 0.2 ⁇ m). Since it is arranged at a position, the electric field relaxation region by LiF can be widened (long). Thereby, the quantum efficiency of green light can be improved. In this case, in the actual measurement value, the quantum efficiency of 550 nm wavelength light (green light) was improved by 1.7 times. In addition, the quantum efficiency of red light in a high-temperature storage environment can be improved, and the occurrence of “white scratches” can be suppressed.

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)

Abstract

L'invention concerne un film de conversion photoélectrique et analogues tels qu'un effet d'avalanche peut être provoqué après qu'une conversion photoélectrique de lumière verte en particulier a été suffisamment réalisée. Le film de conversion photoélectrique (10) de la présente invention est équipé d'une couche de génération de supports (11) pour générer des supports optiques en fonction de la quantité de lumière incidente et d'une couche de multiplication de supports (12) pour multiplier par effet d'avalanche les supports optiques générés, chacune des couches étant principalement constituée de sélénium amorphe. La couche de génération de supports (11) comporte une couche de génération arrière (23) à laquelle du fluorure de lithium est ajouté, ladite couche de génération arrière (23) se trouvant à une position plus profonde qu'une profondeur de pénétration de 0,2 µm pour la lumière sensiblement verte provenant d'une position d'extrémité avant de couche (F) au niveau de laquelle la lumière est incidente.
PCT/JP2014/066645 2014-06-24 2014-06-24 Film de conversion photoélectrique et dispositif de capture d'image le comportant WO2015198388A1 (fr)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019212848A (ja) * 2018-06-07 2019-12-12 日本放送協会 光電変換素子および撮像装置

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5780637A (en) * 1980-11-10 1982-05-20 Hitachi Ltd Target for image pickup tube
JPS57197876A (en) * 1981-05-29 1982-12-04 Nippon Hoso Kyokai <Nhk> Photoconductive film
JPS60245283A (ja) * 1984-05-21 1985-12-05 Hitachi Ltd 光導電膜
JP2002057314A (ja) * 2000-08-10 2002-02-22 Nippon Hoso Kyokai <Nhk> 撮像デバイス及びその動作方法
JP2009092642A (ja) * 2007-09-21 2009-04-30 Fujifilm Corp 放射線検出器
JP2010034166A (ja) * 2008-07-25 2010-02-12 Hamamatsu Photonics Kk 放射線検出器

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5780637A (en) * 1980-11-10 1982-05-20 Hitachi Ltd Target for image pickup tube
JPS57197876A (en) * 1981-05-29 1982-12-04 Nippon Hoso Kyokai <Nhk> Photoconductive film
JPS60245283A (ja) * 1984-05-21 1985-12-05 Hitachi Ltd 光導電膜
JP2002057314A (ja) * 2000-08-10 2002-02-22 Nippon Hoso Kyokai <Nhk> 撮像デバイス及びその動作方法
JP2009092642A (ja) * 2007-09-21 2009-04-30 Fujifilm Corp 放射線検出器
JP2010034166A (ja) * 2008-07-25 2010-02-12 Hamamatsu Photonics Kk 放射線検出器

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019212848A (ja) * 2018-06-07 2019-12-12 日本放送協会 光電変換素子および撮像装置
JP7116597B2 (ja) 2018-06-07 2022-08-10 日本放送協会 光電変換素子および撮像装置

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