WO2015190736A1 - Dispositif électroluminescent et boîtier de dispositif électroluminescent le comprenant - Google Patents

Dispositif électroluminescent et boîtier de dispositif électroluminescent le comprenant Download PDF

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Publication number
WO2015190736A1
WO2015190736A1 PCT/KR2015/005524 KR2015005524W WO2015190736A1 WO 2015190736 A1 WO2015190736 A1 WO 2015190736A1 KR 2015005524 W KR2015005524 W KR 2015005524W WO 2015190736 A1 WO2015190736 A1 WO 2015190736A1
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layer
contact
conductive semiconductor
light emitting
semiconductor layer
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PCT/KR2015/005524
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English (en)
Korean (ko)
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정환희
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엘지이노텍 주식회사
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes

Definitions

  • the embodiment relates to a light emitting device.
  • Embodiments relate to a light emitting device package having a light emitting device.
  • Light emitting diodes are widely used as one of light emitting devices. Light-emitting diodes use the properties of compound semiconductors to convert electrical signals into light, such as infrared, visible and ultraviolet light.
  • the light efficiency of the light emitting device is increased, it is used in various fields including a display device and a lighting device.
  • the embodiment provides a light emitting device in which a contact layer of a second electrode having a supporting member among the first and second electrodes disposed on opposite sides of the light emitting structure can contact different regions.
  • the embodiment provides a light emitting device in which contact regions of first and second electrodes disposed on opposite sides of the light emitting structure do not overlap each other.
  • the embodiment provides a light emitting device having a current spreading structure.
  • a light emitting device includes a light emitting structure including a first conductive semiconductor layer, an active layer under the first conductive semiconductor layer, and a second conductive semiconductor layer under the active layer; An insulating layer having a plurality of open regions under the second conductive semiconductor layer; A contact layer disposed in each open area of the insulating layer; A reflective layer disposed below the contact layer and the insulating layer; A bonding layer disposed below the reflective layer; A conductive support member disposed below the bonding layer; And a first electrode disposed on the first conductive semiconductor layer and spaced apart from a region overlapping the plurality of open regions in a vertical direction among upper regions of the first conductive semiconductor layer.
  • the light emitting device includes a light emitting structure including a first conductive semiconductor layer, an active layer under the first conductive semiconductor layer, and a second conductive semiconductor layer under the active layer; An insulating layer having a plurality of open regions under the second conductive semiconductor layer; A contact layer having a plurality of contact regions in contact with the second conductive semiconductor layer through an open region of the insulating layer; A reflective layer disposed below the contact layer and the insulating layer; A bonding layer disposed below the reflective layer; A conductive support member disposed below the bonding layer; And a first electrode having a pad on the first conductive semiconductor layer and an electrode branched from the pad, wherein the first electrode is perpendicular to the plurality of contact regions in an upper surface area of the first conductive semiconductor layer. Spaced apart from the overlapping area.
  • the current of the light emitting device according to the embodiment can be diffused.
  • the embodiment can improve the internal quantum efficiency of the light emitting device.
  • the embodiment may improve optical reliability by arranging the contact areas of the first and second electrodes disposed on opposite sides of the light emitting structure so that they do not overlap in the vertical direction.
  • the embodiment can improve the reliability of the light emitting device and the light emitting device package having the same.
  • FIG. 1 is a view showing a light emitting device according to a first embodiment.
  • FIG. 2 is a plan view of the light emitting device of FIG. 1.
  • 3 to 9 are views illustrating a manufacturing process of the light emitting device of FIG. 1.
  • FIG. 10 is a view showing a light emitting device according to a second embodiment.
  • FIG. 11 is a view showing a light emitting device according to a third embodiment.
  • FIG. 12 is a view showing a light emitting device according to a fourth embodiment.
  • FIG. 13 is a side cross-sectional view showing a light emitting device package having a light emitting device according to the embodiment.
  • each layer (region), region, pattern, or structure is “on” or “under” the substrate, each layer (film), region, pad, or pattern.
  • “up” and “under” include both “directly” or “indirectly” formed through another layer. do.
  • the criteria for up / down or down / down each layer will be described with reference to the drawings.
  • Figure 1 is a view showing a light emitting device according to a first embodiment
  • Figure 2 is a plan view of the light emitting device of FIG.
  • the light emitting device 100 includes a light emitting structure 10, a second electrode 20 disposed under the light emitting structure 10, the second electrode 20, and the light emission.
  • An insulating layer 41 disposed between the structures 10, a protective layer 45 disposed around the insulating layer 41, and a first electrode 51 disposed on the light emitting structure 10. It includes.
  • the light emitting structure 10 may include a first conductive semiconductor layer 11, an active layer 12 under the first conductive semiconductor layer 11, and a second conductive semiconductor layer 13 under the active layer 12. ) May be included.
  • the active layer 12 may be disposed between the first conductive semiconductor layer 11 and the second conductive semiconductor layer 13.
  • the active layer 12 may be in contact with the first conductive semiconductor layer 11 and the second conductive semiconductor layer 13.
  • the first conductive semiconductor layer 11 is formed of an n-type semiconductor layer to which an n-type dopant is added as a first conductive dopant
  • the second conductive semiconductor layer 13 is a second conductive dopant.
  • a p-type dopant may be formed as a p-type semiconductor layer.
  • the first conductive semiconductor layer 11 may be formed of a p-type semiconductor layer
  • the second conductive semiconductor layer 13 may be formed of an n-type semiconductor layer.
  • the first conductive semiconductor layer 11 may include, for example, an n-type semiconductor layer.
  • the first conductive semiconductor layer 11 may be formed of a semiconductor material having a composition formula of In x Al y Ga 1-xy N (0 ⁇ x ⁇ 1, 0 ⁇ y ⁇ 1, 0 ⁇ x + y ⁇ 1). Can be.
  • the first conductive semiconductor layer 11 may be selected from, for example, GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP, and the like.
  • N-type dopants such as Se and Te may be doped.
  • An upper surface of the first conductive semiconductor layer 11 may be formed of an uneven structure 11A, and the uneven structure 11A may improve light extraction efficiency.
  • the second conductive semiconductor layer 13 may be implemented with, for example, a p-type semiconductor layer.
  • the second conductive semiconductor layer 13 may be formed of a semiconductor material having a composition formula of In x Al y Ga 1-xy N (0 ⁇ x ⁇ 1, 0 ⁇ y ⁇ 1, 0 ⁇ x + y ⁇ 1). Can be.
  • the second conductive semiconductor layer 13 may be selected from, for example, GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP, and the like, and may include Mg, Zn, Ca, P-type dopants such as Sr and Ba may be doped.
  • the second conductive semiconductor layer 13 may be formed to a thickness thinner than the thickness of the first conductive semiconductor layer 11.
  • An upper surface width of the second conductive semiconductor layer 13 may be wider than a lower width of the lower surface of the first conductive semiconductor layer 11, but is not limited thereto.
  • the active layer 12 In the active layer 12, electrons (or holes) injected through the first conductive semiconductor layer 11 and holes (or electrons) injected through the second conductive semiconductor layer 13 meet each other.
  • the layer emits light due to a band gap difference of an energy band according to a material forming the active layer 12.
  • the active layer 12 may be formed of any one of a single quantum well structure, a multi quantum well structure (MQW), a quantum dot structure, or a quantum line structure, but is not limited thereto.
  • the active layer 12 may be formed to a thickness thinner than the thickness of the first conductive semiconductor layer 11.
  • the active layer 12 may be formed of a semiconductor material having, for example, a composition formula of In x Al y Ga 1-xy N (0 ⁇ x ⁇ 1, 0 ⁇ y ⁇ 1, 0 ⁇ x + y ⁇ 1).
  • the active layer 12 may be implemented by stacking a plurality of well layers and a plurality of barrier layers, for example, a pair of well layers / barrier layers.
  • the first conductive semiconductor layer 11 may include a p-type semiconductor layer
  • the second conductive semiconductor layer 13 may include an n-type semiconductor layer.
  • a semiconductor layer including an n-type or p-type semiconductor layer may be further formed on the first conductive semiconductor layer 13.
  • the light emitting structure 10 may have at least one of np, pn, npn, and pnp junction structures.
  • the doping concentrations of the impurities in the first conductive semiconductor layer 11 and the second conductive semiconductor layer 13 may be uniformly or non-uniformly formed. That is, the structure of the light emitting structure 10 may be formed in various ways, but is not limited thereto.
  • a first conductive InGaN / GaN super lattice structure or An InGaN / InGaN superlattice structure may be formed.
  • a second conductive AlGaN layer may be formed between the second conductive semiconductor layer 13 and the active layer 12, and may be formed of, for example, p-type AlGaN.
  • the first electrode 51 may be disposed on the light emitting structure 10, and the second electrode 20 may be disposed below the light emitting structure 10.
  • the light emitting structure 10 may be disposed between the first electrode 51 and the second electrode 20 disposed on opposite sides of the light emitting structure 10.
  • the first electrode 51 may be in contact with the first conductive semiconductor layer 11.
  • the first electrode 51 may include an arm pattern 52 branched at least one or more around the pad region, and the arm pattern 52 diffuses a current. I can let you.
  • the top view shape of the female pattern 52 may be selectively formed among a straight shape, a curved shape, and an angular shape.
  • the cross section of the female pattern 52 may be formed as one of a circle, an ellipse, and a polygon.
  • An insulating layer 41 is disposed between the light emitting structure 10 and the second electrode 20.
  • the insulating layer 41 may contact the bottom surface of the light emitting structure 10, for example, the bottom surface of the second conductive semiconductor layer 13.
  • the insulating layer 41 may be at least 20% of the area of the lower surface of the second conductive semiconductor layer 13 below the lower surface of the second conductive semiconductor layer 13, for example, in a range of 20% to 80%. Can be contacted. Since the insulating layer 41 is in contact with at least 20% of the area of the lower surface of the second conductive semiconductor layer 13, the contact area between the second conductive semiconductor layer 13 and the contact layer 15 is 80%. It can be reduced below. Accordingly, the current layer may be prevented from flowing through the defect in the light emitting structure 10 by the insulating layer 41, and the yield of the light emitting device may be improved.
  • the insulating layer 41 may be formed to have a thickness different from that of the contact layer 15.
  • the insulating layer 41 may be formed to be thicker than the thickness of the contact layer 15.
  • the insulating layer 41 may be formed to have a thickness in the range of 1 nm to 100 nm.
  • the insulating layer 41 may be selectively formed from silicon, SiO 2 , SiO x , SiO x N y , Si 3 N 4 , Al 2 O 3 , TiO 2, or AlN. Since the contact layers 15 are spaced apart from each other, light extraction efficiency may be improved due to a difference in refractive index with other media.
  • the second electrode 20 includes a contact layer 15, a reflective layer 17, a bonding layer 19, and a support member 21.
  • the contact layer 15 may be disposed in a region that does not overlap with the first electrode 51 in the vertical direction. As shown in FIGS. 1 and 2, the contact layer 15 may be disposed to be spaced apart from each other, and may contact different areas of the second conductive semiconductor layer 13. The plurality of contact regions of the contact layer 15 may contact different regions of the second conductive semiconductor layer 13 through the plurality of open regions 42 of the insulating layer 41.
  • the first electrode 51 may be spaced apart from a region overlapping the plurality of open regions 42 in a vertical direction among the top regions of the first conductive semiconductor layer 11.
  • the plurality of contact regions of the contact layer 15 are disposed not to overlap with the first electrode 51 in the vertical direction.
  • the first electrode 51 may be spaced apart from a region overlapped in a vertical direction with a plurality of contact regions of the contact layer 15 among the upper surface regions of the first conductive semiconductor layer 11.
  • the contact layer 15 and the region of the first electrode 51 are disposed to be shifted from each other in the vertical direction, thereby spreading the supplied current.
  • the contact layer 15 may be provided in a current spreading structure.
  • the current diffused by the contact layer 15 may be uniformly supplied to the entire area of the active layer 12, thereby improving the internal quantum efficiency.
  • Each contact region of the contact layer 15 may extend to the bottom surface of the insulating layer 41.
  • the contact layer 15 may include a recess structure at the bottom.
  • the contact layer 15 may be formed to a thickness thinner than the insulating layer 41, for example, 10 nm or less, and when the contact layer 15 is exceeded, a function of the ohmic contact and the light transmitting layer may be degraded.
  • the contact layer 15 may be formed of, for example, a conductive material or a transparent material.
  • the contact layer 15 may include at least one of a conductive oxide film and a conductive nitride film.
  • the contact layer 15 may be formed of, for example, indium tin oxide (ITO), indium zinc oxide (ITO), indium zinc oxide (IZO), indium zinc oxide (IZON), aluminum zinc oxide (AZO), aluminum gallium zinc oxide (AGZO), Indium Zinc Tin Oxide (IZTO), Indium Aluminum Zinc Oxide (IAZO), Indium Gallium Zinc Oxide (IGZO), Indium Gallium Tin Oxide (IGTO), Antimony Tin Oxide (ATO), Gallium Zinc Oxide (GZO), IZO Nitride ), ZnO, IrOx, RuOx, and NiO.
  • the contact layer 15 may include at least one of a metal material such as Ag, Ni, Rh, Pd, Pt, Hf, In, and Zn.
  • the contact layer 15 may be in contact with the second conductive semiconductor layer 13, for example, in ohmic contact.
  • the contact layer 15 may be formed of another material, for example, a semiconductor material. Ions may be implanted into these semiconductor materials to function as conductive layers.
  • An area of the contact layer 15 which is in contact with the bottom surface of the second conductive semiconductor layer 13 is about 80% or less of, for example, 20% to 80% of the bottom surface area of the second conductive semiconductor layer 13. Can be.
  • the contact layer 15 may be dispersedly disposed in the lower region of the light emitting structure 10. Looking at the relationship between the insulating layer 41 and the contact layer 15 in contact with the bottom surface of the second conductive semiconductor layer 13, as the contact area of the insulating layer 41 increases, the contact layer ( The contact area of 15 is reduced. As the contact area of the contact layer 15 decreases, the operating voltage increases.
  • the area where the insulating layer 41 is in contact with the lower surface of the second conductive semiconductor layer 13 is about 20% to 80% of the lower surface area of the second conductive semiconductor layer 13, for example, 50% to 80%. Can range from%.
  • the area where the insulating layer 41 is in contact with the lower surface of the second conductive semiconductor layer 13 is in the range of about 50% to about 80% of the area of the lower surface of the second conductive semiconductor layer 13
  • the operating voltage of the device may increase slightly by about 0.2V compared to the case where the contact area is 40% or less of the lower surface area of the second conductive semiconductor layer 13.
  • the rate of increase of the operating voltage is increased by two times or more, for example, about 0.4V or more.
  • the reflective layer 17 may be formed of a metal material having a high reflectance.
  • the reflective layer 17 may be formed of a metal or an alloy including at least one of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Cu, Au, and Hf.
  • the reflective layer 17 may be formed of indium-tin-oxide (ITO), indium-zinc-oxide (IZO), indium-zinc-tin-oxide (IZTO), and indium-aluminum-zinc- (AZO).
  • Light-transmitting materials such as Oxide), Indium-Gallium-Zinc-Oxide (IGZO), Indium-Gallium-Tin-Oxide (IGTO), Aluminum-Zinc-Oxide (AZO), and Antimony-Tin-Oxide (ATO) It can be formed in multiple layers.
  • the reflective layer 17 may include at least one of Ag, Al, Ag-Pd-Cu alloy, or Ag-Cu alloy.
  • the reflective layer 17 may be formed wider than the width of the contact layer 15.
  • a portion 17A of the reflective layer 17 may protrude into a plurality of recesses of the contact layer 15. As part of the reflective layer 17 17A contacts the recess of the contact layer 15, the adhesion between the reflective layer 17 and the contact layer 15 can be enhanced. That is, a portion 17A of the reflective layer 17 may be disposed in the open area 42 of the insulating layer 41.
  • the reflective layer 17 may be disposed to be smaller or wider than the width of the lower surface of the light emitting structure 10.
  • the reflective layer 17 may be in contact with and electrically connected to the contact layer 15.
  • the reflective layer 17 may perform a function of increasing the amount of light extracted to the outside by reflecting light incident from the light emitting structure 10.
  • the reflective layer 17 may be formed in multiple layers.
  • the bonding layer 19 is disposed below the reflective layer 17.
  • the bonding layer 19 is bonded between the reflective layer 17 and the support member 21.
  • a barrier layer (not shown) may be further disposed between the bonding layer 19 and the reflective layer 17.
  • the barrier layer may prevent the metal material from diffusing toward the reflective layer 17.
  • the width of the bonding layer 19 may be wider than the width of the reflective layer 17.
  • the outer portion of the bonding layer 19 may extend to the bottom surface of the protective layer 45.
  • the reflective layer 17 may extend between the bonding layer 19 and the protective layer 45.
  • the bonding layer 19 may include a protrusion 18 protruding to overlap the contact layer 15 in the vertical direction in the direction of the contact layer 15.
  • the bonding layer 19 may be improved in contact area with the reflective layer 17 by the protrusion 18.
  • the bonding layer 19 may be formed in a single layer or multiple layers.
  • the bonding layer 19 is formed of at least one of a metal, for example, Ti, Au, Sn, Ni, Cr, Ga, In, Bi, Cu, Ag, Nb, Pt, W, V, Fe, Mo, Pd or Ta. It can be formed including one.
  • the bonding layer 19 may include seed layers such as Ni, Pt, Ti, W, V, Fe, and Mo.
  • the support member 21 supports the light emitting device 100 according to the embodiment and may be electrically connected to an external electrode to provide power to the light emitting structure 10.
  • the support member 21 may be formed of, for example, at least one metal or two or more alloys of Ti, Cr, Ni, Al, Pt, Au, W, Cu, Mo, and Cu-W.
  • the support member 21 may be formed of a semiconductor substrate (eg, Si, Ge, GaN, GaAs, ZnO, SiC, SiGe, etc.) into which impurities are injected.
  • the support member 21 may be formed to be thicker than the thickness of the bonding layer 19 and thicker than the thickness of the light emitting structure 10.
  • the support member 21 may have a thickness of 30 ⁇ m or more, for example, in a range of 100 ⁇ m to 500 ⁇ m. If the support member 21 is less than or equal to the thickness range, the function as a support layer is weak. If the support member 21 is more than the thickness range, the thickness of the light emitting device becomes thick.
  • a protective layer 45 may be formed on an outer circumference between the light emitting structure 10 and the second electrode 20.
  • the protective layer 45 may be disposed between the second conductive semiconductor layer 13 and the bonding layer 19.
  • the passivation layer 45 includes an inner portion 44 contacting the outer circumference of the lower surface of the second conductive semiconductor layer 13 and an outer portion 43 extending outward from the sidewall of the light emitting structure 10. .
  • the inner portion 44 of the protective layer 45 may be disposed around the insulating layer 41 and the reflective layer 17.
  • the inner portion 44 of the protective layer 45 may be in contact with the outside of the insulating layer 41 and the reflective layer 17.
  • An open area is disposed inside the protective layer 45, and the contact layer 15 and the insulating layer 41 are disposed in the open area.
  • the protective layer 45 may have a thickness equal to or smaller than the sum of the thicknesses of the insulating layer 41 and the reflective layer 17.
  • the protective layer 45 may be disposed between the light emitting structure 10 and the bonding layer 19 to provide a long path for moisture penetration into the light emitting structure 10. At least one of the upper and lower surfaces of the protective layer 45 may be formed in an uneven shape, and the uneven shape may improve the extraction efficiency of light extracted through the protective layer 45.
  • the protective layer 45 and the insulating layer 41 may be integrally formed of the same material, but are not limited thereto.
  • the outer portion 43 of the protective layer 45 may be exposed to the outer area A1 of the light emitting structure 10.
  • the protective layer 45 may be formed of metal oxide or metal nitride.
  • the protective layer 45 may be formed of, for example, a material such as SiO 2 , SiO x , SiO x N y , Si 3 N 4 , Al 2 O 3 , TiO 2 , AlN.
  • the protective layer 45 may be defined as a channel layer for protecting the circumference of the lower surface of the light emitting structure 10, but is not limited thereto.
  • a surface protective layer may be formed on the surface of the light emitting structure 10.
  • the surface protective layer may be disposed on a portion of the side surface and the upper surface of the light emitting structure 10, but is not limited thereto.
  • Wires may be bonded to the first electrode 51.
  • the support member 21 of the light emitting device 100 may be die bonded on a board or lead frame.
  • the contact regions of the contact layers 15 of the second electrode 20 are spaced apart from each other and disposed so as not to overlap the first electrode 51 in the vertical direction, thereby doubled the current diffusion effect and internal quantum efficiency. It can be improved.
  • 3 to 9 are views illustrating a manufacturing process of the light emitting device of FIG. 1.
  • the first conductive semiconductor layer 11, the active layer 12, and the second conductive semiconductor layer 13 are formed on the substrate 5.
  • the first conductive semiconductor layer 11, the active layer 12, and the second conductive semiconductor layer 13 may be defined as a light emitting structure 10.
  • the substrate 5 may be an insulating or conductive substrate.
  • the substrate 5 may be formed of, for example, at least one of sapphire substrate (Al 2 O 3 ), SiC, GaAs, GaN, ZnO, Si, GaP, InP, Ge, but is not limited thereto.
  • At least one of a buffer layer and an undoped semiconductor layer may be formed between the first conductive semiconductor layer 11 and the substrate 5.
  • the semiconductor layer grown on the substrate 5 may be, for example, a metal organic chemical vapor deposition (MOCVD), a chemical vapor deposition (CVD), or a plasma chemical vapor deposition (PECVD). Deposition), Molecular Beam Epitaxial (MBE), Hydride Vapor Phase Epitaxial (HVPE), and the like, but are not limited thereto.
  • MOCVD metal organic chemical vapor deposition
  • CVD chemical vapor deposition
  • PECVD plasma chemical vapor deposition
  • MBE Molecular Beam Epitaxial
  • HVPE Hydride Vapor Phase Epitaxial
  • the first conductive semiconductor layer 11 is formed of an n-type semiconductor layer to which an n-type dopant is added as a first conductive dopant
  • the second conductive semiconductor layer 13 is a second conductive dopant.
  • a p-type dopant may be formed as a p-type semiconductor layer.
  • the first conductive semiconductor layer 11 may be formed of a p-type semiconductor layer
  • the second conductive semiconductor layer 13 may be formed of an n-type semiconductor layer.
  • the first conductive semiconductor layer 11 may include, for example, an n-type semiconductor layer.
  • the first conductive semiconductor layer 11 may be formed of a semiconductor material having a composition formula of In x Al y Ga 1-xy N (0 ⁇ x ⁇ 1, 0 ⁇ y ⁇ 1, 0 ⁇ x + y ⁇ 1). Can be.
  • the first conductive semiconductor layer 11 may be selected from, for example, InAlGaN, GaN, AlGaN, AlInN, InGaN, AlN, InN, or the like, and may be doped with an n-type dopant such as Si, Ge, Sn, or the like.
  • the second conductive semiconductor layer 13 may be implemented with, for example, a p-type semiconductor layer.
  • the second conductive semiconductor layer 13 may be formed of a semiconductor material having a composition formula of In x Al y Ga 1-xy N (0 ⁇ x ⁇ 1, 0 ⁇ y ⁇ 1, 0 ⁇ x + y ⁇ 1). Can be.
  • the second conductive semiconductor layer 13 may be selected from, for example, InAlGaN, GaN, AlGaN, InGaN, AlInN, AlN, InN, or the like, and p-type dopants such as Mg, Zn, Ca, Sr, and Ba may be doped. Can be.
  • the active layer 12 In the active layer 12, electrons (or holes) injected through the first conductive semiconductor layer 11 and holes (or electrons) injected through the second conductive semiconductor layer 13 meet each other.
  • the layer emits light due to a band gap difference of an energy band according to a material forming the active layer 12.
  • the active layer 12 may be formed of any one of a single quantum well structure, a multi quantum well structure (MQW), a quantum dot structure, or a quantum line structure, but is not limited thereto.
  • the active layer 12 may be formed of a semiconductor material having a composition formula of In x Al y Ga 1-xy N (0 ⁇ x ⁇ 1, 0 ⁇ y ⁇ 1, 0 ⁇ x + y ⁇ 1).
  • the active layer 12 may be formed by alternately stacking a plurality of well layers and a plurality of barrier layers.
  • the first conductive semiconductor layer 11 may include a p-type semiconductor layer
  • the second conductive semiconductor layer 13 may include an n-type semiconductor layer.
  • a semiconductor layer including an n-type or p-type semiconductor layer may be further formed below the second conductive semiconductor layer 13.
  • the light emitting structure 10 may include np, pn, npn, and pnp. It may have at least one of the bonding structure.
  • the doping concentrations of the impurities in the first conductive semiconductor layer 11 and the second conductive semiconductor layer 13 may be uniformly or non-uniformly formed. That is, the structure of the light emitting structure 10 may be formed in various ways, but is not limited thereto.
  • a first conductive InGaN / GaN super lattice structure or an InGaN / InGaN superlattice structure may be formed between the first conductive semiconductor layer 11 and the active layer 12.
  • a second conductive AlGaN layer may be formed between the second conductive semiconductor layer 13 and the active layer 12.
  • a protective layer 45 is formed around the upper surface of the light emitting structure 10.
  • the protective layer 45 exposes an upper surface of the light emitting structure 10 through an open region 40 therein.
  • the protective layer 45 may be deposited by metal oxide or metal nitride.
  • An insulating layer 41 is deposited on the upper surface of the light emitting structure 10 in the open region 40 of the protective layer 45, and the insulating layer 41 has a plurality of open regions 42.
  • the plurality of open regions 42 are spaced apart from each other. For example, as shown in FIG. 2, the contact area of the contact layer 15 may be spaced apart.
  • the protective layer 45 may be thicker than the thickness of the insulating layer 41.
  • the contact layer 15 is formed on the upper surface of the light emitting structure 10.
  • a plurality of contact regions are disposed in the open region 42 of the insulating layer 41.
  • the outer portion of each contact area of the contact layer 15 may extend to the top surface of the insulating layer 41.
  • a portion of the contact layer 15 may be disposed between the insulating layer 41 and the reflective layer 17.
  • the reflective layer 17 is formed on the contact layer 15.
  • the reflective layer 17 is formed to a width that can cover the contact areas of the contact layer 15. Accordingly, the light reflection efficiency can be improved.
  • the contact layer 15 may be formed of a metal oxide or a metal, and the reflective layer 17 may be formed of a metal material.
  • the contact layer 15 and the reflective layer 17 may be formed through a deposition process or a plating process.
  • a bonding layer 19 is formed on the reflective layer 17.
  • a conductive support member 21 is formed on the bonding layer 19.
  • a seed layer or a diffusion barrier layer may be included between the bonding layer 19 and the reflective layer 17, but is not limited thereto.
  • the bonding layer 19 may be formed through a deposition process or a plating process, and the support member 21 is bonded to the bonding layer 19.
  • FIG. 8 inverts the chip structure of FIG. 7 and then removes the substrate 5 from the light emitting structure 10.
  • the substrate 5 may be removed by a laser lift off (LLO) process.
  • the laser lift-off process (LLO) is a process of peeling the substrate 5 and the light emitting structure 10 from each other by irradiating a laser on the lower surface of the growth substrate 5.
  • the substrate 5 may not be removed.
  • the substrate 5 may be a translucent material.
  • isolation etching may be performed along the outer region A1 of the individual chip of the light emitting structure 10 to be divided into individual light emitting device units.
  • the isolation etching may be performed by dry etching such as, for example, inductively coupled plasma (ICP), but is not limited thereto. That is, the outer area A1 of the light emitting structure 10 may be etched and removed, and the outer part 43 of the protective layer 45 may be exposed.
  • ICP inductively coupled plasma
  • an uneven structure 11A is formed on the upper surface of the first conductive semiconductor layer 11. Accordingly, the light extraction effect of extracting light to the outside through the first conductive semiconductor layer 11 can be enhanced.
  • a first electrode 51 having an arm pattern 52 may be formed on the top surface of the first conductive semiconductor layer 11.
  • the first electrode 51 may be disposed so as not to overlap the region of the contact layer 15 in the vertical direction.
  • a surface protective layer (not shown) may be formed on the surface of the light emitting structure 10.
  • the surface protective layer may be deposited on a portion of the side surface and the upper surface of the light emitting structure 10, but is not limited thereto.
  • FIG. 10 is a side sectional view showing a light emitting device according to the second embodiment.
  • the same configuration as that of FIG. 1 will be referred to the description of FIG. 1.
  • a plurality of potentials 14 may be disposed in the light emitting structure 10.
  • the dislocation 14 extends from the upper surface of the first conductive semiconductor layer 11 toward the lower surface of the light emitting structure 10.
  • a blocking film 47 is formed between the potential 14 and the insulating layer 41.
  • the blocking layer 47 extends from the lower surface of the light emitting structure 10 in the direction of the upper surface of the light emitting structure 10.
  • the blocking layer 47 may be disposed in a recess region corresponding to the potential 14, and may extend convexly from the insulating layer 41 to the upper surface of the active layer 12.
  • At least one of the potentials 14 may be disposed between the upper surface of the first conductive semiconductor layer 11 and the blocking layer 47, for example.
  • the blocking layer 47 may be disposed to be spaced apart from each other between the insulating layer 41 and the first conductive semiconductor layer 11.
  • the blocking layer 47 may be formed of the same material as the insulating layer 41, but is not limited thereto.
  • the cross-section of the barrier layer 47 may be formed in a wide bottom portion and a narrow top portion, for example, a horn shape, but is not limited thereto and may be formed in a circular, elliptical or polygonal shape.
  • the blocking layer 47 may be disposed in the light emitting structure 10 to block the dislocations 14 from propagating, thereby protecting the active layer 12.
  • At least one of the potentials 14 may be disposed to overlap at least a portion of the first electrode 51 and the female pattern 52, but is not limited thereto.
  • the blocking layer 47 is disposed not to overlap the contact layer 15, that is, the contact regions of the contact layer 15 in the vertical direction.
  • the embodiment separates the contact layer 15 to provide a current diffusion path, and further, the blocking film 47 may be disposed in the light emitting structure 10 to protect the active layer 12 by blocking abnormal power transmission. Can be.
  • FIG. 11 is a side sectional view showing a light emitting device according to the third embodiment.
  • the same parts as those described above will be referred to the description of the above-described embodiments.
  • the light emitting device includes a contact layer 15 having first and second contact layers 15A and 15B under the light emitting structure 10.
  • the first contact layer 15A is disposed in the open region 42 of the insulating layer 41 and is in contact with the bottom surface of the second conductive semiconductor layer 13.
  • the second contact layer 15B has a width wider than that of the first contact layer 15A and is disposed between the first contact layer 15A and the reflective layer 17.
  • the second contact layer 15B may be disposed on the bottom surface of the insulating layer 41. Since the second contact layer 15B is disposed to be wider than the width of the first contact layer 15A, the second contact layer 15B is disposed on the bottom surface of the reflective layer 17 and the insulating layer 41. Can be contacted. Accordingly, the adhesive force of the second contact layer 15B may be improved.
  • the contact layer 15 having the first and second contact layers 15A and 15B may be disposed so as not to overlap with the first electrode 51 in a different region.
  • the first contact layer 15A may be in ohmic contact with the second conductive semiconductor layer 13, and the second contact layer 15B may be formed of a material different from that of the first contact layer 15A.
  • the second contact layer 15A may be formed of a light transmissive material or a metal material having a different transmittance from the first contact layer 15A.
  • the first contact layer 15A may be formed of indium-tin-oxide (ITO), indium-zinc-oxide (IZO), indium-zinc-tin-oxide (IZTO), indium-aluminum-zinc-oxide (IGAZO), or IGZO.
  • the second contact layer 15B may be a metal oxide different from the first contact layer 15A, or may be selected from metals such as Ni, Pt, In, Zn, and Ag.
  • the reflective layer 17 may be disposed under the second contact layer 15B and the insulating layer 41 to reflect the incident light.
  • FIG. 12 is a side sectional view showing a light emitting device according to the fourth embodiment.
  • the same parts as the above-described components will be referred to the description of the above-described embodiments.
  • an insulating layer 41 and a second electrode 20 are disposed under the light emitting structure 10.
  • the second electrode 20 includes a contact layer 15C, a reflective layer 17, a bonding layer 19, and a support member 21.
  • the contact layer 15C includes a plurality of contact regions respectively contacting different open regions 42 of the insulating layer 41.
  • the contact layer 15C has a hole 31 disposed therein and extends to the bottom surface of the insulating layer 41.
  • a protrusion 17B of the reflective layer 17 is disposed in the hole 31 of the contact layer 15C, and the protrusion 17B is in contact with the bottom surface of the second conductive semiconductor layer 13.
  • the contact layer 15C and the protrusion 17B of the reflective layer 17 are in contact with the bottom surface of the second conductive semiconductor layer 13, for example, the contact layer 15C is in ohmic contact, and the protrusion 17B is in contact with the lower surface of the second conductive semiconductor layer 13. ) Can be contacted with Schottky.
  • the contact layer 15C may be disposed so as not to overlap the first electrode 51 in the vertical direction, thereby spreading current.
  • the first electrode 51 of the light emitting device may be disposed in another area.
  • the first electrode may be in contact with the bottom of the first conductive semiconductor layer in a via structure, or may contact the bottom of the outer sidewall of the first conductive semiconductor layer.
  • the contact region of the first electrode and the first conductive semiconductor layer may be disposed not to overlap with the contact layers 15 and 15C according to the embodiment.
  • FIG. 13 is a side cross-sectional view illustrating a light emitting device package having the light emitting device of FIG. 1.
  • the light emitting device package may be provided to the body 101, the first lead electrode 121 and the second lead electrode 123 disposed on the body 101, and the body 101.
  • the light emitting device 100 according to the embodiment is electrically connected to the first lead electrode 121 and the second lead electrode 123, and a molding member 131 surrounding the light emitting device 100.
  • the body 101 may include a silicon material, a synthetic resin material, or a metal material, and may provide a cavity 103 having an inclined surface around the light emitting device 100.
  • the first lead electrode 121 and the second lead electrode 123 are electrically separated from each other, and provide power to the light emitting device 100.
  • the first lead electrode 121 and the second lead electrode 123 may increase light efficiency by reflecting light generated from the light emitting device 100, and heat generated from the light emitting device 100. It may also play a role in discharging it to the outside.
  • the light emitting device 100 is disposed on the first lead electrode 121 and is connected to the second lead electrode 123 by a wire 105.
  • the light emitting device 100 may be die-bonded with a conductive adhesive (not shown) on the first lead electrode 121.
  • the molding member 131 may be disposed on the light emitting device 100 and may protect the light emitting device 100.
  • the molding member 131 may include a phosphor to change the wavelength of light emitted from the light emitting device 100.
  • a plurality of light emitting devices or light emitting device packages may be arranged on a substrate, and an optical member such as a lens, a light guide plate, a prism sheet, and a diffusion sheet may be disposed on an optical path of the light emitting device package.
  • the light emitting device package, the substrate, and the optical member may function as a light unit.
  • the light unit may be implemented in a top view or a side view type and provided to a display device such as a portable terminal and a notebook computer, or may be variously applied to a lighting device and a pointing device.
  • Yet another embodiment may be implemented as a lighting device including the light emitting device or the light emitting device package described in the above embodiments.
  • the lighting device may include a lamp, a street lamp, a signboard, a headlamp.
  • the embodiment can improve the reliability of the light emitting device.
  • the light emitting device of the embodiment may be applied to a lighting device such as a lamp, a street lamp, a sign board, a head lamp, and the like using the LED.

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

Un dispositif électroluminescent décrit dans un mode de réalisation comprend : une structure électroluminescente comprenant une première couche semi-conductrice conductrice, une couche active au-dessous de la première couche semi-conductrice conductrice, et une seconde couche semi-conductrice conductrice sous la couche active; une couche d'isolation ayant une pluralité de régions ouvertes au-dessous de la seconde couche conductrice à semi-conducteurs; des couches de contact disposées dans chacune des régions ouvertes de la couche d'isolation; une couche de réflexion disposée sous les couches de contact et la couche d'isolation; une couche de liaison disposée sous la couche de réflexion; un élément de support conducteur disposé sous la couche de liaison; et une première électrode disposée au-dessus de la première couche conductrice à semi-conducteur et espacée à partir de régions en chevauchement avec la pluralité de régions ouvertes d'une surface supérieure région de la première couche conductrice à semi-conducteur dans la direction verticale.
PCT/KR2015/005524 2014-06-10 2015-06-02 Dispositif électroluminescent et boîtier de dispositif électroluminescent le comprenant WO2015190736A1 (fr)

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KR1020140070290A KR102153123B1 (ko) 2014-06-10 2014-06-10 발광소자 및 이를 구비한 발광소자 패키지

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Citations (5)

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KR20090027329A (ko) * 2007-09-12 2009-03-17 삼성전기주식회사 수직구조 반도체 발광소자 및 그 제조 방법
KR20100058072A (ko) * 2008-11-24 2010-06-03 엘지이노텍 주식회사 발광 소자 및 그 제조방법
KR20120037100A (ko) * 2010-10-11 2012-04-19 엘지이노텍 주식회사 발광 소자 및 발광 소자 패키지
US20130214294A1 (en) * 2012-02-17 2013-08-22 Epistar Corporation Light emitting device with planar current block structure
US20130292639A1 (en) * 2004-06-30 2013-11-07 Cree, Inc. Light emitting devices having current reducing structures

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AU6946196A (en) 1995-09-18 1997-04-09 Hitachi Limited Semiconductor material, method of producing the semiconductor material, and semiconductor device

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Publication number Priority date Publication date Assignee Title
US20130292639A1 (en) * 2004-06-30 2013-11-07 Cree, Inc. Light emitting devices having current reducing structures
KR20090027329A (ko) * 2007-09-12 2009-03-17 삼성전기주식회사 수직구조 반도체 발광소자 및 그 제조 방법
KR20100058072A (ko) * 2008-11-24 2010-06-03 엘지이노텍 주식회사 발광 소자 및 그 제조방법
KR20120037100A (ko) * 2010-10-11 2012-04-19 엘지이노텍 주식회사 발광 소자 및 발광 소자 패키지
US20130214294A1 (en) * 2012-02-17 2013-08-22 Epistar Corporation Light emitting device with planar current block structure

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