WO2015182977A1 - Source de dépôt physique en phase vapeur activé par plasma et appareil de dépôt utilisant cette dernière - Google Patents

Source de dépôt physique en phase vapeur activé par plasma et appareil de dépôt utilisant cette dernière Download PDF

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Publication number
WO2015182977A1
WO2015182977A1 PCT/KR2015/005282 KR2015005282W WO2015182977A1 WO 2015182977 A1 WO2015182977 A1 WO 2015182977A1 KR 2015005282 W KR2015005282 W KR 2015005282W WO 2015182977 A1 WO2015182977 A1 WO 2015182977A1
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WO
WIPO (PCT)
Prior art keywords
crucible
plasma
vapor deposition
physical vapor
deposition source
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Application number
PCT/KR2015/005282
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English (en)
Korean (ko)
Inventor
이강일
최용섭
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한국기초과학지원연구원
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Publication of WO2015182977A1 publication Critical patent/WO2015182977A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating

Definitions

  • the present invention relates to a physical vapor deposition source and a deposition apparatus using plasma, and to a technique of coupling a plasma to a thermal physical vapor deposition source for depositing a thin film on a substrate.
  • PVD physical vapor deposition
  • CVD chemical vapor deposition
  • physical vapor deposition techniques include vacuum thermal evaporation, sputtering and ion plating, and chemical vapor deposition techniques, such as spraying and chemical vapor deposition, are used. There is this.
  • vacuum thermal evaporation has the advantages that the working conditions are clean, no by-products are formed, and high purity thin films can be formed even in a vacuum state, but the deposition density has different characteristics of thin film density and thin film surface. There is a disadvantage in that it falls.
  • the conventional deposition method using plasma has a disadvantage in that the space in which the plasma is generated and the space in which the deposition material to be vaporized by heat is not dualized, so that the vaporization of the vaporized deposition material is not smoothly performed.
  • the present invention constitutes a plasma assisted physical vapor deposition source using a combination of vacuum thermal deposition and plasma.
  • a deposition apparatus using this was constructed. This will be described in detail below.
  • the present invention has been made in an effort to provide a plasma assisted physical vapor deposition source for depositing a thin film of high efficiency on a substrate and a deposition apparatus using the same.
  • the present invention provides a plasma assisted physical vapor deposition source
  • the plasma assisted physical vapor deposition source has a crucible having an evaporation material receiving space and a plasma generating space above the evaporation material receiving space; Evaporation material in the evaporation material receiving space; Heating means configured to vaporize the evaporation material; Plasma generating means located in the plasma generating space and configured to induce a plasma of evaporated material vaporized by the heating means; A discharge portion formed on an upper surface of the crucible and configured to guide the plasmized evaporation material out of the crucible.
  • the crucible accommodates an evaporation material evaporated by heat therein, and provides a space in which a plasma is generated.
  • the crucible may use a material having good physical properties against high temperature, strong thermal shock, and good corrosion resistance.
  • the evaporation material accommodating space means a space accommodating a material for evaporation located under the crucible, and the plasma generation space is a space where plasma is generated by the plasma generating means, and the vaporized evaporation material passes through the plasma. It is a space to be converted, the invention is characterized in that located above the evaporation material receiving space.
  • the heating means is a configuration capable of heating and evaporating the evaporation material, the heating method is not limited.
  • the evaporation material may be aluminum, magnesium, silver, gallium, copper, indium, selenide, and the like, and is not particularly limited as long as it is a material that can be deposited on a substrate.
  • the discharge portion is configured to guide the plasma-ized evaporation material in the crucible to a substrate located outside the crucible, and may be, for example, a nozzle or a through opening.
  • the emission part of the present invention is characterized in that the internal light of the crucible is configured so that it is not visible to the outside of the crucible. The inventors have confirmed that damage to organic matter occurs when the light of the plasma generated in the crucible is exposed to the deposited material and the substrate. In order to overcome this, the light inside the crucible is configured to not leak to the outside.
  • the discharge portion of the present invention includes two plates spaced apart from each other along the crucible longitudinal direction, the two plates each comprising an opening, each formed in the two plates
  • the longitudinal line connecting the openings of the crucibles is not parallel to the longitudinal axis direction of the crucible.
  • the longitudinal axis direction of the crucible means a longitudinal direction along the central axis of the crucible.
  • the discharge portion of the present invention includes a top plate corresponding to the outer surface of the crucible and a bottom plate positioned below the top plate, wherein the top plate includes one or more first openings. And the bottom plate includes one or more second openings around the first opening.
  • the plasma generating means of the present invention includes two ring type electrodes, and the two ring type electrodes are spaced apart from each other along the longitudinal axis direction of the crucible.
  • a capacitively coupled plasma (CCP) is formed between two spaced apart electrodes by applying a voltage to the two electrodes.
  • the two ring-type electrodes are spaced apart above and below the center axis of the crucible, respectively.
  • the plasma generating means of the present invention comprises two plate type electrodes, each of the two plates comprising at least one opening, and the two plate type electrodes Are located in the crucible so that the plate surface of the crucible is parallel to the cross section of the crucible, and the two plate-type electrodes are spaced apart from each other along the longitudinal axis of the crucible, and a capacitance is applied between the two electrodes spaced by applying a voltage to the two electrodes.
  • Sex Coupled Plasma CCP
  • the said plate type electrode means the electrode of a flat plate shape.
  • Evaporated evaporation material is introduced through the opening of the plate surface located relatively below the crucible, and plasmalized evaporation material is directed through the opening of the plate surface relatively located above the crucible to the discharge portion.
  • the cross section of the crucible means a surface which appears when the crucible is cut out in the transverse direction with respect to the central axis of the crucible.
  • the capacitively coupled plasma (CCP) is formed in the space between the two spaced plate type electrodes.
  • the plasma generating means of the present invention includes a coil for inductively coupled plasma, the coil being wound around the outer surface of the crucible along the longitudinal axis direction of the crucible
  • an inductively coupled plasma ICP may be formed in the coil by applying a high frequency to the coil. The coil is wound along the outer wall of the crucible in the longitudinal axis direction of the crucible.
  • the plasma generating means of the present invention comprises: two ring-type electrodes; And a connecting member for longitudinally connecting the two ring-type electrodes to each other so as to energize each other, wherein the two ring-type electrodes are spaced apart from each other along the longitudinal axis direction of the crucible and fitted around the outer surface of the crucible.
  • An inductively coupled plasma (ICP) is formed between the two electrodes spaced apart by applying a high frequency to the electrode.
  • the heating means may be a heater disposed around the outside of the crucible. .
  • the plasma assisted physical vapor deposition source may further include a heat sink disposed around the outside of the heater.
  • the heat sink may prevent the radiant heat generated during the deposition process from heating outside the plasma assisted physical vapor deposition source of the present invention or the part where the temperature does not need to be increased.
  • the present invention provides a physical vapor deposition apparatus, the physical vapor deposition apparatus, the chamber; A substrate located above the chamber and onto which deposits will be deposited; And the plasma assisted physical vapor deposition source positioned below the substrate.
  • a plasma generating means is added to a conventional vacuum thermal evaporation apparatus to deposit a plasmalized evaporation material on a substrate, thereby depositing a thin film having good thin film density and thin film surface characteristics on the substrate. It provides the effect.
  • the present invention provides a thin film having excellent thin film density and thin film surface characteristics, and can be used as a high purity, high quality OLED thin film in an OLED manufacturing process, thereby improving the quality and lifespan of an OLED device.
  • FIG. 1 is a schematic view showing a conventional thin film deposition apparatus 100.
  • FIG. 2 is a block diagram showing the configuration of a conventional deposition source 10.
  • FIG. 3 is a block diagram of the plasma assisted physical vapor deposition source 200 of the present invention.
  • FIG. 4 shows a first embodiment of a plasma assisted physical vapor deposition source 200.
  • FIG. 5 shows a first form of plasma generating means 130 of the plasma assisted physical vapor deposition source 200 of FIG.
  • FIG. 6 shows a second embodiment of a plasma assisted physical vapor deposition source 200.
  • FIG. 7 illustrates a second form of the plasma generating means 130 of the plasma assisted physical vapor deposition source 200 of FIG. 6.
  • FIG. 8 illustrates a third embodiment of a plasma assisted physical vapor deposition source 200.
  • FIG. 9 illustrates a third form of the plasma generating means 130 of the plasma assisted physical vapor deposition source 200 of FIG. 8.
  • FIG. 10 shows a fourth embodiment of the plasma assisted physical vapor deposition source 200.
  • FIG. 11 shows a fourth form of the plasma generating means 130 of the plasma assisted physical vapor deposition source 200 of FIG.
  • FIG. 12 illustrates an embodiment of the discharge unit 140 of the plasma assisted physical vapor deposition source 200 of the present invention.
  • FIG. 13 illustrates a configuration diagram of a physical vapor deposition apparatus 1000 including a plasma assisted physical vapor deposition source 200.
  • the conventional thin film deposition apparatus 100 is configured to evaporate the evaporation material 11 in the deposition source 10 and to generate the evaporation gas 20 on the substrate 30.
  • FIG. 2 is a block diagram showing the configuration of a conventional deposition source 10.
  • the evaporation source 10 is heat through the crucible 12 containing the evaporation material 11, the heater 13 to raise the temperature of the crucible 12, the crucible 12 and the heater 13
  • Reflector 14 prevents loss of heat and prevents radiant heat from being heated, and prevents overheating of the crucible 12 outside of the reflector 14 to maintain the proper temperature. It consists of a cooling jacket 16 to protect and the nozzle 15 to allow the evaporation material 11 to leak out of the deposition source 10.
  • the deposit has a disadvantage that the thin film density and thin film surface properties of the thin film deposited on the substrate are inferior to the deposition technique using the chemical method.
  • the present invention provides a deposition source combining the plasma generating means with a conventional deposition source using heat in order to overcome the disadvantages of the physical deposition source using the existing heat.
  • the material evaporated through the evaporation source of the present invention further has energy by plasma as well as thermal energy as it becomes plasma, and when the evaporated material is deposited on a substrate, it improves the thin film density and thin film surface characteristics of the deposited film. This improves the quality of the product.
  • the detailed structure of this invention is described below.
  • FIG. 3 is a block diagram of the plasma assisted physical vapor deposition source 200 of the present invention.
  • the plasma assisted physical vapor deposition source 200 is a crucible 110; Evaporation material 111; Heating means 120; Plasma generating means 130; The discharge unit 140 and the heat sink 150 may be included.
  • the crucible 110 is an evaporation material accommodating space 112 and evaporation material accommodating space 112, which is a space accommodating the evaporation material to be heated by the heating means, and a plasma generating space 113, which is a space where plasma is generated. It includes. Since the evaporation material accommodating space 112 and the plasma generating space 113 are dualized with each other, only the evaporation material 111 vaporized in the evaporation material accommodating space 112 is converted into plasma.
  • the heating means 120 is a means for heating the evaporation material 111 in the crucible 110.
  • the heating means 120 is a heater wrapped around the crucible 110 and heats the crucible 110 to heat the evaporation material accommodating space 112 located below the crucible 110.
  • the evaporation material receiving space 112 is heated, the evaporation material 111 inside the evaporation material receiving space 112 is vaporized, and the vaporized evaporation material 111 evaporates in the direction of the plasma generating space 113. do.
  • the plasma generating means 130 generates plasma in the plasma generating space inside the crucible 110.
  • the plasma generating means 130 may be a capacitively coupled plasma (CCP) source or an inductively coupled plasma (ICP) source.
  • CCP capacitively coupled plasma
  • ICP inductively coupled plasma
  • FIG. 4 shows a first embodiment of a plasma assisted physical vapor deposition source 200.
  • FIG. 5 shows a first form of plasma generating means 130 of the plasma assisted physical vapor deposition source 200 of FIG.
  • the first form of the plasma generating means 130 includes two ring type 131 electrodes.
  • the electrodes of the two ring types 131 are fitted around the crucible 110 along the outer wall of the crucible 110 and spaced apart from each other along the longitudinal direction of the crucible 110. For example, two rings on one finger.
  • CCP capacitively coupled plasma
  • a plasma generating space 113 is formed between the two ring-type electrodes 131, and the evaporation material 111 is plasma-formed while passing through the plasma generating space 113 to form the discharge unit 140.
  • FIG. 6 shows a second embodiment of a plasma assisted physical vapor deposition source 200.
  • FIG. 7 illustrates a second form of the plasma generating means 130 of the plasma assisted physical vapor deposition source 200 of FIG. 6.
  • the second form of the plasma generating means 130 includes two plate type electrodes, that is, electrodes having a thin flat plate shape.
  • the two plate type electrodes are spaced apart from each other along the longitudinal axis direction of the crucible 110. That is, one plate type electrode (first plate type electrode 133) is positioned above the crucible 110, and the other plate type electrode (second plate type electrode 134) is the first plate type electrode 133.
  • first plate type electrode 133 is positioned above the crucible 110
  • second plate type electrode 134 is the first plate type electrode 133.
  • the surface of each plate of the two plate-type electrodes is located in parallel with the cross section generated when the crucible 110 is cut in the horizontal axis.
  • a capacitively coupled plasma is generated between the two plate type electrodes due to the potential difference between the two electrodes. That is, the plasma generating space 113 is formed between the two plate-type electrodes.
  • One or more openings are formed in the plate surfaces of the two plate type electrodes, so that the evaporation material 111 vaporized in the crucible 110 passes through the openings in the plate surface of the second plate type electrode 134 to generate the plasma.
  • the plasma-formed evaporation material 111 is guided to the discharge part 140 through the opening of the plate surface of the first plate type electrode 133.
  • FIG. 8 illustrates a third embodiment of a plasma assisted physical vapor deposition source 200.
  • FIG. 9 illustrates a third form of the plasma generating means 130 of the plasma assisted physical vapor deposition source 200 of FIG. 8.
  • the third form of the plasma generating means 130 includes a coil 135 for generating an inductively coupled plasma (ICP).
  • the coil 135 is connected to an electrode for generating a plasma and wound around the outer surface of the crucible 110 along the longitudinal axis direction of the crucible 110.
  • ICP inductively coupled plasma
  • a high frequency is applied to the electrode connected to the coil 135
  • a high frequency is applied to the coil 135 to generate an inductively coupled plasma (ICP) inside the coil 135.
  • ICP inductively coupled plasma
  • the evaporation material 111 vaporized in the crucible 110 is converted into plasma while being passed through the crucible 110 inside the coil 135 in which the plasma is generated, and guided to the emission unit 140.
  • FIG. 10 shows a fourth embodiment of the plasma assisted physical vapor deposition source 200.
  • FIG. 11 shows a fourth form of the plasma generating means 130 of the plasma assisted physical vapor deposition source 200 of FIG.
  • the fourth form of the plasma generating means 130 includes two ring-type electrodes 136 so that the two ring-type electrodes 136 and the two ring-type electrodes 136 are energized with each other. It includes a connecting member 137 for connecting.
  • the connection member 137 is preferably the same as the member of the two ring-type electrode 136, but can be replaced if the member having similar electrical characteristics.
  • the two ring-type electrodes 136 are spaced apart from each other along the longitudinal axis direction of the crucible 110 and are fitted around the outer surface of the crucible 110.
  • the connection member 137 connects the two ring-type electrodes 136 in a direction parallel to the longitudinal axis direction of the crucible 110.
  • an inductively coupled plasma is formed in the space between the two ring-type electrodes 136. do.
  • the vaporized evaporation material 111 passing through the inside of the portion of the crucible 110 located in the space between the two ring-type electrodes 136 connected is plasmaated and guided to the discharge unit 140.
  • FIG. 12 illustrates an embodiment of the discharge unit 140 of the plasma assisted physical vapor deposition source 200 of the present invention.
  • the discharge unit 140 is configured to guide the vaporized evaporation material 111 that has been plasma-formed in the crucible 110 to the outside of the crucible 110.
  • the emission unit 140 prevents light generated inside the crucible 110 from escaping to the outside of the crucible 110. It is composed.
  • the discharge unit 140 is composed of two plates.
  • the two plates are spaced apart from each other along the longitudinal axis direction of the crucible 110, one or more openings are formed in each plate.
  • Plasma vaporized evaporation material is passed through the opening of each plate to the outside of the crucible 110.
  • a line 145 connecting the openings to prevent the light generated from the inside of the crucible from exiting the crucible 110 is It is configured not to be parallel to the longitudinal axis direction of the crucible 110.
  • the upper plate 141 corresponding to the outer surface of the crucible of the two plates has a first opening 143 penetrating the center of the upper plate 141.
  • the lower plate 142 positioned below the upper plate 141 has a radius exceeding the radius of the first opening 143 formed in the upper plate 141 based on the center of the lower plate 142.
  • An annular second opening 144 is formed.
  • a second opening 144 is formed around the first opening 143, and a line 145 connecting the first opening 143 and the second opening 144 is in the longitudinal direction of the crucible 110. If not parallel to the shape of the first opening 143 and the second opening 144 is not limited.
  • the heat dissipation plate 150 is a structure that blocks radiant heat generated through the heating means 120, and is disposed around an outer circumference of the heating means 120. By arranging the heat sink, radiant heat can be prevented from escaping to the outside of the plasma assisted physical vapor deposition source 200 of the present invention or heating a portion where the temperature does not need to be increased.
  • the plasma assisted physical vapor deposition source 200 of the present invention allows the evaporation material 111 of the evaporation material accommodating space 112 to be vaporized while being heated by the heating means 120, and the vaporized evaporation material 111.
  • the plasma generated by the plasma generating means 130 is made to be plasma while passing through the plasma generating space 113 is present, the plasma evaporation material 111 is the substrate 300 located outside the crucible 110
  • the vaporized evaporation material 111 to be deposited on the crucible 110 is discharged to the outside of the crucible 110 through the discharge unit 140.
  • FIG. 13 illustrates a configuration diagram of a physical vapor deposition apparatus 1000 including a plasma assisted physical vapor deposition source 200.
  • the physical vapor deposition apparatus 1000 of the present invention includes a chamber 400; A substrate 300; And a plasma assisted physical vapor deposition source 200.
  • the description of the plasma assisted physical vapor deposition source 200 has been described above, and overlapping description thereof will be omitted.
  • the substrate 300 is a plate on which the evaporation material 111 vaporized and raised above the chamber 400 is to be deposited.
  • the chamber 400 is a process where the substrate 300 is deposited.
  • the chamber 400 protects the plasma assisted physical vapor deposition source 200 and the substrate 300 on which the evaporation material is to be deposited from the outside and the evaporation material 111.
  • the vacuum is maintained to prevent impurities from being contained.
  • the plasmalized evaporation material 111 generated from the plasma assisted physical vapor deposition source 200 is deposited on the substrate 300 and thinned.
  • the space inside the chamber 400 is maintained in a vacuum state during the thin film.

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

L'invention concerne une source de dépôt physique en phase vapeur activé par plasma. La source de dépôt physique en phase vapeur activé par plasma qui constitue la présente invention, comprend : un creuset comportant en son sein un espace de réception de matériau de vaporisation et un espace de génération de plasma agencé au-dessus de l'espace de réception de matériau de vaporisation ; un matériau de vaporisation à l'intérieur de l'espace de réception de matériau de vaporisation ; un moyen de chauffage configuré de sorte à vaporiser le matériau de vaporisation ; un moyen de génération de plasma disposé dans l'espace de génération de plasma et configuré de sorte à guider le plasma à partir du matériau de vaporisation vaporisé par le moyen de chauffage ; et une unité d'éjection formée sur la surface supérieure du creuset et configurée de sorte à guider le matériau de vaporisation formé en plasma vers l'extérieur du creuset.
PCT/KR2015/005282 2014-05-27 2015-05-27 Source de dépôt physique en phase vapeur activé par plasma et appareil de dépôt utilisant cette dernière WO2015182977A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2014-0063831 2014-05-27
KR1020140063831A KR20150136392A (ko) 2014-05-27 2014-05-27 플라즈마 보조 물리 기상 증착원 및 이를 이용한 증착 장치

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WO2015182977A1 true WO2015182977A1 (fr) 2015-12-03

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20050023685A (ko) * 2003-09-02 2005-03-10 주식회사 선익시스템 유기이엘 디스플레이용 박막 봉지 형성 장치 및 방법
JP2005076095A (ja) * 2003-09-02 2005-03-24 Shincron:Kk 薄膜形成装置及び薄膜形成方法
KR20050047940A (ko) * 2003-11-18 2005-05-23 삼성에스디아이 주식회사 증발원
JP2008305735A (ja) * 2007-06-11 2008-12-18 Canon Inc 有機発光素子の製造方法及び蒸着装置
JP2009088323A (ja) * 2007-10-01 2009-04-23 Ulvac Japan Ltd バリア膜の形成装置およびバリア膜の形成方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20050023685A (ko) * 2003-09-02 2005-03-10 주식회사 선익시스템 유기이엘 디스플레이용 박막 봉지 형성 장치 및 방법
JP2005076095A (ja) * 2003-09-02 2005-03-24 Shincron:Kk 薄膜形成装置及び薄膜形成方法
KR20050047940A (ko) * 2003-11-18 2005-05-23 삼성에스디아이 주식회사 증발원
JP2008305735A (ja) * 2007-06-11 2008-12-18 Canon Inc 有機発光素子の製造方法及び蒸着装置
JP2009088323A (ja) * 2007-10-01 2009-04-23 Ulvac Japan Ltd バリア膜の形成装置およびバリア膜の形成方法

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