WO2014027778A1 - Appareil de déposition à évaporation - Google Patents

Appareil de déposition à évaporation Download PDF

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Publication number
WO2014027778A1
WO2014027778A1 PCT/KR2013/007020 KR2013007020W WO2014027778A1 WO 2014027778 A1 WO2014027778 A1 WO 2014027778A1 KR 2013007020 W KR2013007020 W KR 2013007020W WO 2014027778 A1 WO2014027778 A1 WO 2014027778A1
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WO
WIPO (PCT)
Prior art keywords
integrating sphere
crucible
outlet
vapor
disposed
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PCT/KR2013/007020
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English (en)
Korean (ko)
Inventor
이주인
김정형
신용현
유신재
유용심
Original Assignee
한국표준과학연구원
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Publication of WO2014027778A1 publication Critical patent/WO2014027778A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass

Definitions

  • the present invention relates to an evaporation deposition apparatus, and to a top-down or side-side evaporation deposition apparatus using induction heating and integrating sphere.
  • a target material to be deposited is placed inside a high vacuum chamber, and the material to be deposited is heated to evaporate the particles, and the vapor is moved to form a thin film on the substrate.
  • the evaporation deposition apparatus has a crucible of ceramic material and a heating unit for heating the crucible.
  • the evaporation deposition apparatus deposits a thin film on a substrate disposed on the upper surface of vapor evaporated against gravity upwardly.
  • the bottom-up deposition apparatus has a problem in that the substrate is bent. Therefore, a bottom up deposition apparatus or a side deposition apparatus is required.
  • an anode is usually formed on an upper portion of a transparent substrate, and a hole injection layer (HIL) is sequentially formed on the anode.
  • a hole transport layer (HTL), an organic emission layer (EML), an electron transport layer (ETL) and an electron injection layer (EIL) are deposited, and a cathode is formed on the electron transport layer.
  • HTL hole transport layer
  • EML organic emission layer
  • ETL electron transport layer
  • EIL electron injection layer
  • the cathode is damaged by the plasma and ultraviolet rays when the thin film is deposited by a conventional stuttering method, such that the lower organic light emitting layer is required to deposit the conductive material by a side- or top-down evaporation method.
  • One technical problem to be solved of the present invention is to provide a side- or top-down evaporation deposition apparatus of radial evaporation by a point source using induction heating and integrating sphere method overcoming the problems of the conventional bottom-up evaporation deposition apparatus.
  • An evaporation deposition apparatus is an inlet receiving steam, a baffle disposed around the inlet to redirect the steam, a spherical or oval cavity reflecting the steam, and the cavity
  • An integrating sphere comprising an outlet for radially discharging the vapor reflected or scattered a plurality of times by a point source;
  • a crucible for containing evaporation material therein and providing vapor evaporated through the first opening to the inlet of the integrating sphere;
  • a heating unit disposed to surround the integrating sphere and the crucible, and heating the crucible and the integrating sphere, wherein the integrating sphere is formed of a conductive material, and the inner surface of the cavity is rough so that the evaporation material is scattered.
  • the heating unit induction coil for induction heating the crucible and the integrating sphere Can be.
  • the vapor exiting the outlet of the integrating sphere can deposit a thin film on the substrate disposed opposite the second opening have.
  • the vapor exiting the outlet of the integrating sphere is to deposit a thin film on a substrate disposed opposite the second opening Can be.
  • the shape of the cavity is an ellipsoid
  • the vapor flux discharged from the outlet may increase as the distance away from the central axis of the cavity.
  • the integrating sphere and the crucible may be integral.
  • the outlet of the integrating sphere has a conical inner space, the vapor flux of the discharged edge portion is reflected inward to the inner surface of the outlet can adjust the discharge angle of the steam.
  • the induction coil includes a first induction coil surrounding the crucible and a second induction coil surrounding the integrating sphere, the first AC power source connected to the first induction coil and the second It may further include a second AC power source connected to the induction coil.
  • the integrating sphere is disposed below the crucible, the crucible is a cylindrical inner wall having a first height; An outer wall surrounding the inner wall with a second height higher than the first height; A lid covering an upper surface of the outer wall; And it may include a bottom plate in the form of a washer connecting the lower surface between the inner wall and the outer wall.
  • the steam moved inwardly of the inner wall may be provided to the inlet formed on the upper surface of the integrating sphere through the first opening formed in the lower surface of the inner wall.
  • the heat reflecting portion disposed to surround the heating portion;
  • a dielectric container disposed to surround the heat reflecting portion;
  • a washer-shaped support portion disposed on a lower surface of the outlet of the integrating sphere;
  • a case disposed to surround the dielectric container.
  • Evaporation deposition apparatus by heating the crucible and / or the deposition material through induction heating to generate steam, induction heating the steam provided integrating sphere to the radial steam having the outlet of the integrating sphere as a point source A thin film can be formed.
  • the shape of the integrating sphere can be replaced with an integral ellipsoid to change the distribution of steam to form a thin film of uniform thickness.
  • lateral or top-down evaporation deposition is possible on large-area OLED and solar cell substrates, substrate damage due to radiant heat can be suppressed, and agglomeration due to uneven vapor distribution of a conventional top-down deposition source can be eliminated, and induction heating It is possible to prevent the phenomenon that the outlet (nozzle) is blocked.
  • FIG. 1 is a cross-sectional view illustrating an evaporation deposition apparatus according to an embodiment of the present invention.
  • FIG. 2 is a cross-sectional view illustrating an evaporation deposition apparatus according to another embodiment of the present invention.
  • 3 to 7 are cross-sectional views illustrating evaporation deposition apparatuses according to still other embodiments of the present invention.
  • FIGS. 8 and 9 are perspective views illustrating an evaporation deposition apparatus in another embodiment of the present invention.
  • Conventional evaporation deposition apparatus has a crucible of a ceramic material and a heating unit for heating the crucible.
  • the evaporation deposition apparatus deposits a thin film on a substrate disposed on the upper surface of vapor evaporated against gravity upwardly.
  • the heating unit heats the crucible through heat conduction using a heating wire.
  • a top-down evaporation deposition apparatus including a reflector for changing the direction of the vapor particles on top of the bottom-up evaporation source.
  • the reflector of the top-down evaporation deposition apparatus generates heat loss, and the crucible and the reflector transmit radiant heat to the substrate, thereby changing the thin film properties.
  • the conventional top-down deposition source technology creates a non-uniform vapor distribution as it only creates a passage to direct the evaporated vapor down. Accordingly, there is a need for a top down or side evaporation deposition apparatus that minimizes radiant heat and enables deposition with a uniform vapor distribution over a large area substrate.
  • the evaporation deposition method according to an embodiment of the present invention is a radial type that heats the crucible and / or the deposition material through induction heating, introduces steam into the integrating sphere, induction heating the integrating sphere, and uses the outlet of the integrating sphere as a point source. Steam may be provided to the substrate to form a thin film.
  • an induction heating deposition source is placed on the top or side of the vacuum vessel and the substrate is located on the bottom or side to enable top or side deposition.
  • the deposition material is a conductor
  • only the deposition material can be directly induction heated without heating the crucible.
  • the deposition material is vaporized and provided to the integrating sphere, the integrating sphere is inductively heated, and the vapor is reflected or scattered several times in the integrating sphere to provide a uniform radial vapor to the substrate as a point source for integrating the sphere, resulting in uneven aggregation.
  • the phenomenon can be suppressed.
  • the temperature of the deposition material and the temperature of the integrating sphere may be adjusted differently. Accordingly, the properties of the thin film deposited on the substrate can be changed.
  • the conductive crucible is heated, and the deposition material contained in the crucible may be indirectly heated. Accordingly, the deposition material is vaporized and provided to the integrating sphere, the integrating sphere is inductively heated, and the integrating sphere can provide a vapor having a high energy to the substrate while suppressing the phenomenon of vapor condensation with each other. Accordingly, the substrate may form a thin film of good quality at a low process temperature without heating to a high temperature.
  • the integrating sphere may be replaced with an integral ellipsoid, and the outlet may be a point source to form more vapor distribution from the center to both edges, thereby forming a thin film having a uniform thickness in a wide area.
  • the outlet of the integrating sphere may have a conical shape and reflect the vapor of the discharged edge portion inward to adjust the discharge angle of the steam. Side-by-side or top-down devices can deposit uniform thin films on large area substrates without deformation.
  • FIG. 1 is a cross-sectional view illustrating an evaporation deposition apparatus according to an embodiment of the present invention.
  • the evaporation deposition apparatus 110 includes an integrating sphere 116, a crucible 112, a dielectric container 118, and induction coils 117a and 117b.
  • the integrating sphere 116 is an inlet 116a receiving steam, a baffle 116d disposed around the inlet 116a to change the direction of the steam, and a spherical or elliptical cavity reflecting the steam ( 116c and an outlet 116b for discharging the vapor reflected from the cavity 116c.
  • the integrating sphere 116 is formed of a conductive material.
  • the integrating sphere 116 is heated by an induction coil.
  • the integrating sphere 116 includes a spherical or elliptical cavity 116c therein, and an induction electric field or an induction current is formed along a central axis (z-axis) of the integrating sphere 116.
  • the frequency of the induced electric field may be several tens of kilohertz (kHz) to several megahertz (Mhz). Accordingly, an induction electric field may be formed inside the integrating sphere 116.
  • the induction electric field may be induction heated.
  • the induction heating may reduce unnecessary heat loss in a direct heating method as compared with heating by a conventional heating wire. Accordingly, the integrating sphere may be heated to a uniform first temperature.
  • the external shape of the integrating sphere 116 may be a cylindrical shape or a sphere formed to have a certain thickness.
  • the integrating sphere 116 may be symmetrically cut in order to install the baffle 116d therein.
  • the cut surface is preferably an x-y plane, but may be an x-z plane.
  • An oval or spherical cavity 116c is disposed inside the integrating sphere 116, an inlet 116a is disposed on an upper surface of the cavity 116c, and a lower surface of the cavity 116c.
  • Outlet 116b may be disposed.
  • the baffle 116d may be disposed to block the inlet 116a of the integrating sphere 116 with a predetermined gap.
  • the baffle 116d may inhibit the vapor provided at the inlet 116a from directly exiting the outlet 116b.
  • the baffle 116d may be formed of a conductive material, and may have a disc shape, and the center of the baffle 116d may coincide with the center of the inlet. Accordingly, the induction electric field may inductively heat the baffle 116d.
  • the vapor may enter the baffle 116d, be reflected or scattered, and be provided to the inner surface of the cavity 116c.
  • the vapor may exit the outlet with constant velocity and radial distribution through reflection and scattering within the cavity 116c. This maintains the stability and reproducibility of the process.
  • the angular distribution of the vapor flux exiting the outlet 116b may depend on the structure of the cavity 116c.
  • the surface of the cavity 116c may be roughened.
  • the first temperature of the integrating sphere 116 may be different from the second temperature of the crucible 112. Specifically, the first temperature of the integrating sphere 116 may be higher than the second temperature of the crucible 112. Accordingly, the temperature of the steam in the integrating sphere 116 may be higher than the temperature of the steam in the crucible 112. Accordingly, high energy vapor may be provided to the substrate (not shown) through the outlet 116b. Accordingly, the substrate can form a thin film of good quality without being heated to a high temperature.
  • the vapor may be effusion from the outlet 116b of the integrating sphere 116.
  • the vapor passing through the outlet of the integrating sphere 116 may form a uniform thin film on the substrate.
  • the crucible 112 contains the evaporation material 114 therein, and provides the vapor evaporated through the opening 111 to the inlet 116a of the integrating sphere 116.
  • the crucible 112 has a cylindrical inner wall 112b having a first height, an outer wall 112a surrounding a circumference of the inner wall with a second height higher than the first height, and a lid covering an upper surface of the outer wall 112a. 112d, and a bottom plate 112c in the form of a washer connecting the lower surface between the inner wall 112b and the outer wall 112a.
  • the inner side of the inner wall 112b is connected to the opening 111 formed in the lower surface.
  • Evaporation material is received between the inner wall 112b and the outer wall 112a, and the evaporation material 114 and / or the crucible 112 are induction heated by the induction coils 117a and 117b, and the evaporation Material 114 is evaporated.
  • the steam moves to the inside of the inner wall 112b and through the opening 111 to the inlet 116a of the integrating sphere 116. Once the lid 112d is removed, the evaporation material 114 can be replenished.
  • the aluminum powder may be stored in the crucible 112.
  • the crucible 112 may be a conductive material having a high melting point.
  • the crucible 112 may be graphite, stainless steel, nickel, molybdenum, titanium, or tungsten.
  • the induction coils 117a and 117b may be separated into a first induction coil 117a and a second induction coil 117b.
  • the first induction coil 117a may induction heat the crucible 112 and / or the evaporation material 114 to melt and vaporize the evaporation material 114. Vaporized vapor may be provided to the integrating sphere 116 through the opening 111.
  • the organic material may be stored in the crucible 112.
  • the crucible 112 is formed of a conductive material, and the first induction coil 117a may induction heat the crucible to vaporize or sublime the evaporation material. Steam may be provided to the integrating sphere 116 through the opening 111.
  • the dielectric container 118 surrounds the crucible 112 and the integrating sphere 116 and has a surface open toward the outlet 116b of the integrating sphere 116.
  • the material of the dielectric container 118 may be quartz, alumina, or ceramic.
  • the dielectric container 118 may be in the form of a cylinder having an open one surface.
  • the dielectric container 118 has a lid 118a, and the lid 118a may be coupled to the dielectric container 118 while maintaining a vacuum.
  • a ring-shaped locking jaw 113 may be disposed inside one open surface of the dielectric container 118.
  • the integrating sphere 116 may be disposed on the locking jaw 113.
  • the dielectric container 118 may be coupled through an opening 104 formed in the upper surface of the vacuum container 102.
  • the dielectric container 118 may be disposed to protrude to the outside of the vacuum container 102 to suppress transfer of heat emitted from the crucible 112 and the integrating sphere 116 to the substrate.
  • the induction coils 117a and 117b may be disposed outside the dielectric container 118 to inductively heat the crucible 112 and the integrating sphere 116.
  • the induction coils 117a and 117b may include a first induction coil 117a surrounding the crucible 112 and a second induction coil 117b surrounding the integrating sphere 116.
  • the first induction coil 117a and the second induction coil 117b may be in the form of a solenoid coil.
  • the first induction coil 117a may be connected to the first AC power source 119a
  • the second induction coil 117b may be connected to the second AC power source 119b.
  • the induction coils 117a and 117b may be formed of copper pipes, and refrigerant may flow therein. Since the crucible 112 and the integrating sphere 116 have a structure protruding from the vacuum vessel 102, the radiant heat radiated by the crucible 112 and the integrating sphere 116 is transmitted to the substrate to a minimum. do. In addition, since the crucible 112 and the integrating sphere 116 are induction heated, substrate damage due to radiant heat is minimized. In addition, by maintaining the temperature of the integrating sphere 116 and the temperature of the crucible 112 different from each other, the deposition rate and the thin film characteristics of the substrate can be adjusted.
  • FIG. 2 is a cross-sectional view illustrating an evaporation deposition apparatus according to another embodiment of the present invention.
  • the evaporation deposition apparatus 110a includes an integrating sphere 116, a crucible 112, a dielectric container 118, and induction coils 117a and 117b.
  • the cavity 116c of the integrating sphere 116 is elliptical, and the radius of the major axis (x-axis) may be 1.5 to 3 times larger than the radius of the minor axis (z-axis). Accordingly, the angle distribution of the steam exiting the outlet can be adjusted. Accordingly, process uniformity of the substrate can be improved.
  • FIG 3 is a cross-sectional view illustrating an evaporation deposition apparatus according to another embodiment of the present invention.
  • the evaporation deposition apparatus 110b includes an integrating sphere 116, a crucible 112, a dielectric container 118, and induction coils 117a and 117b.
  • the evaporation deposition apparatus 110b provides a directed apparatus.
  • the outlet 116c of the integrating sphere may have a conical shape. Accordingly, the edge vapor exiting the outlet may be reflected from the sidewall of the cone shape so that the angle distribution may be changed. Thereby, the discharge angle of steam can be adjusted.
  • FIG. 4 is a cross-sectional view illustrating an evaporation deposition apparatus according to another embodiment of the present invention.
  • the evaporation deposition apparatus 210 includes an integrating sphere 116, a crucible 212, a dielectric container 118, and induction coils 117a and 117b.
  • the evaporation deposition apparatus 210 provides a lateral device or a side device.
  • vapor may be deposited on the top surface of the vacuum vessel such that the deposited material may fall onto the substrate and act as a contaminant.
  • lateral devices are resistant to contamination.
  • An opening 104 is formed on the side of the vacuum container 102.
  • a dielectric container 118 is mounted in the opening 104.
  • the dielectric container 118 may have a cylindrical shape with an open side.
  • the dielectric container 118 may include a ring-shaped locking jaw 113 around the lid 118a and one open surface. When the lid 118a is removed, the crucible 212 and the integrating sphere 116 may be removed.
  • the integrating sphere 116 is an inlet 116a receiving steam, a baffle 116d disposed around the inlet 116a to change the direction of the steam, and a spherical cavity 116c reflecting the steam. And an outlet 116b for discharging the vapor reflected from the cavity 116c.
  • the integrating sphere 116 is formed of a conductive material.
  • the integrating sphere 116 may have a cylindrical structure.
  • the crucible 212 contains vaporized material therein and provides the vapor evaporated through the discharge port to the inlet of the integrating sphere 116.
  • the crucible 212 may have a lid 212d. When the lid 212d is removed, the deposition material 114 may be stored.
  • the lid 212d may be disposed in the z-axis direction or in a direction opposite to gravity.
  • the crucible 212 may have a cylindrical structure in which both sides thereof are blocked.
  • One side of the crucible may include an opening 211, and the opening 211 may be connected to the inlet 116a of the integrating sphere 116.
  • the dielectric container 118 surrounds the crucible 212 and the integrating sphere 116 and has one surface open toward the outlet 116b of the integrating sphere 116.
  • the dielectric container 118 may be cylindrical with a lid 118a.
  • One open side of the dielectric container 118 is mounted to an opening 104 formed in the side surface of the vacuum container 102.
  • the induction coils 117a and 117b are disposed outside the dielectric container 118 to inductively heat the crucible 212 and the integrating sphere 116.
  • the induction coils 117a and 117b may include a first induction coil 117a surrounding the crucible 212 and a second induction coil 117b surrounding the integrating sphere 216.
  • the induction coils 117a and 117b may be in the form of solenoid coils.
  • the first induction coil 117a may be connected to the first AC power source 119a
  • the second induction coil 117b may be connected to the second AC power source 119b.
  • FIG. 5 is a cross-sectional view illustrating an evaporation deposition apparatus according to another embodiment of the present invention.
  • the evaporation deposition apparatus 110c includes an integrating sphere 116, a crucible 112, a dielectric container 118, and an induction coil 117.
  • the integrating sphere 116 and the crucible 112 may be integrally formed.
  • the induction coil 117 may be integrally formed to simultaneously heat the integrating sphere 116 and the crucible 112. Accordingly, there may be one AC power source 119 supplying power to the induction coil.
  • the evaporation deposition apparatus 110c may be installed in the vacuum container.
  • FIG. 6 is a cross-sectional view illustrating an evaporation deposition apparatus according to another embodiment of the present invention.
  • the evaporation deposition apparatus 210a includes an integrating sphere 116, a crucible 212, a dielectric container 118, and an induction coil 117.
  • the integrating sphere 116 and the crucible 212 may be integrally formed.
  • the induction coil 117 may be integrally formed to simultaneously heat the integrating sphere 116 and the crucible 212. Accordingly, there may be one AC power source 119 supplying power to the induction coil 117.
  • the evaporation deposition apparatus 210a may be installed in the vacuum container.
  • FIG. 7 is a cross-sectional view illustrating an evaporation deposition apparatus according to another embodiment of the present invention.
  • the evaporation deposition apparatus 310 includes an integrating sphere 116, a crucible 112, and a heating unit 317.
  • the integrating sphere 116 is an inlet 116a receiving steam, a baffle 116d disposed around the inlet 116a to change the direction of the steam, and a spherical or elliptical cavity reflecting the steam ( 116c, and an outlet 116b for radially discharging the vapor reflected or scattered a plurality of times in the cavity 116c.
  • the integrating sphere 116 is formed of a conductive material, and the inner surface of the cavity 116 is rough so that the evaporation material is scattered.
  • the crucible 112 contains the evaporation material 114 therein and provides the vapor evaporated through the first opening 111 to the inlet 116a of the integrating sphere 116.
  • the heating unit 317 is disposed to surround the integrating sphere 116 and the crucible 112 and includes a heating unit for heating the crucible 112 and the integrating sphere 116.
  • the heating unit 317 may include a heating wire.
  • the power source 319 may be connected to the heating unit 317 to supply power.
  • the heating unit 317 may operate in direct current or alternating current.
  • the heat reflecting part 321 is disposed to surround the heating part 317.
  • the heat reflecting unit 321 may reflect the radiant heat of the heating unit 317 in the integrating sphere and the crucible direction.
  • the heat reflector may be formed of a conductor.
  • the heat reflector may have a lid.
  • the dielectric container 318 is disposed to surround the heat reflecting portion 321.
  • the dielectric container 318 may perform a thermal insulation function. This can prevent heat from escaping the dielectric vessel.
  • the dielectric container may have a lid.
  • the case 323 is disposed to surround the dielectric container 318.
  • the case 323 may be disposed on the vacuum container 102 to maintain a vacuum.
  • the case 323 may be formed of a conductor.
  • the case may have a cylindrical shape with a lid.
  • the supporting part 313 has a washer shape disposed on the lower surface of the outlet 116c of the integrating sphere 116.
  • the support part 313 may be disposed on the second opening 103 of the vacuum container 102.
  • the support part 313 may be formed of a dielectric having excellent heat insulating properties, and may directly block the integrating sphere 116 and the vacuum container 102.
  • the heating part 317 may be disposed on the support part 313, and thermal contact between the heating part 317 and the vacuum container 102 may be suppressed.
  • FIG. 8 is a perspective view illustrating an evaporation deposition apparatus according to another embodiment of the present invention.
  • the substrate 142 is disposed perpendicular to the vacuum vessel 102, and an evaporation source 210 is disposed at a position facing the substrate 142.
  • a mask 143 is positioned between the substrate 142 and the evaporation source 142, and the substrate 142 and the mask 143 are aligned and fixed in close contact with each other in the substrate holder 141.
  • the mask 143 includes a pattern portion in which a pattern corresponding to a thin film to be formed on the substrate 142 is formed.
  • the evaporation source 210 may move in the vertical direction (z-axis).
  • the moving parts 191 and 192 may include a fixing part 192 for fixing the evaporation source 210 and a rotating shaft 191 for vertically moving the fixing part 192.
  • the rotating shaft 191 may be rotated by a motor. Accordingly, as the rotation shaft 191 rotates, the fixing unit 192 may change the rotational movement into a linear movement.
  • the evaporation source 210 may include an integrating sphere 116, a crucible 212, a dielectric container 118, and an induction coil 117.
  • FIG. 9 is a perspective view illustrating an evaporation deposition apparatus according to another embodiment of the present invention.
  • the substrate 142 is horizontally disposed in the vacuum container 102, and an evaporation source 110 is disposed on an upper surface facing the substrate 142.
  • a mask 143 is positioned between the substrate 142 and the evaporation source 110, and the substrate 142 and the mask 143 are aligned and fixed in close contact with each other in the substrate holder 141.
  • the mask 143 includes a pattern portion in which a pattern corresponding to a thin film to be formed on the substrate 142 is formed.
  • the evaporation source 110 may move in the left and right directions (x-axis).
  • the moving parts 191 and 192 may include a fixing part 192 for fixing the evaporation source 110 and a rotating shaft 191 for horizontally moving the fixing part 192.
  • the rotating shaft 191 may be rotated by a motor. Accordingly, as the rotation shaft 191 rotates, the fixing unit 192 may change the rotational movement into a linear movement.
  • the evaporation source 110 may include an integrating sphere 116, a crucible 112, a dielectric container 118, and an induction coil 117.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Vapour Deposition (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

La présente invention porte sur un appareil de déposition à évaporation. L'appareil comprend : une entrée à travers laquelle de la vapeur est fournie ; un écran qui est disposé au voisinage de l'entrée de façon à changer la direction de la vapeur ; une cavité sphérique ou elliptique qui réfléchit la vapeur ; une sphère d'intégration qui a une sortie à travers laquelle la vapeur réfléchie ou diffusée une pluralité de fois dans la cavité est déchargée radialement par une source ponctuelle ; un creuset dans lequel un matériau d'évaporation est introduit, le creuset fournissant la vapeur évaporée à travers une première ouverture vers l'entrée de la sphère d'intégration ; et une unité de chauffage qui est agencée de façon à entourer la sphère d'intégration et le creuset de façon à chauffer le creuset et la sphère d'intégration. La sphère d'intégration est constituée en un matériau conducteur, et la surface interne de la cavité est rendue rugueuse pour que le matériau d'évaporation soit diffusé.
PCT/KR2013/007020 2012-08-13 2013-08-05 Appareil de déposition à évaporation WO2014027778A1 (fr)

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KR10-2012-0088125 2012-08-13
KR1020120088125A KR101473345B1 (ko) 2012-08-13 2012-08-13 증발 증착 장치

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KR101818646B1 (ko) * 2015-09-08 2018-03-02 한국생산기술연구원 배플을 이용한 나노다공성3차원구조 박막의 제조방법 및 이에 의한 나노다공성3차원구조 박막
US20190088924A1 (en) * 2017-09-15 2019-03-21 Dyson Technology Limited High speed manufacturing of multilayer electrochemical device
CN113957391A (zh) * 2020-07-21 2022-01-21 宝山钢铁股份有限公司 一种采用芯棒加热结构均匀分配金属蒸汽的真空镀膜装置

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KR101606761B1 (ko) * 2014-11-12 2016-03-28 한국표준과학연구원 유도 가열 선형 증발 증착 장치
KR102065142B1 (ko) * 2016-04-03 2020-02-11 주식회사 뉴파워 프라즈마 유도가열을 이용한 스팀발생장치，이를 이용한 스팀 세정 시스템
WO2017213277A1 (fr) * 2016-06-09 2017-12-14 주식회사 파인에바 Appareil de dépôt utilisant l'évaporation descendante

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