WO2015180366A1 - Oled显示面板 - Google Patents

Oled显示面板 Download PDF

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Publication number
WO2015180366A1
WO2015180366A1 PCT/CN2014/088381 CN2014088381W WO2015180366A1 WO 2015180366 A1 WO2015180366 A1 WO 2015180366A1 CN 2014088381 W CN2014088381 W CN 2014088381W WO 2015180366 A1 WO2015180366 A1 WO 2015180366A1
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layer
display panel
oled display
insulating layer
oled
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PCT/CN2014/088381
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English (en)
French (fr)
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孙韬
周伟峰
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京东方科技集团股份有限公司
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Publication of WO2015180366A1 publication Critical patent/WO2015180366A1/zh

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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80Constructional details
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80Constructional details
    • H10K59/87Passivation; Containers; Encapsulations
    • H10K59/873Encapsulations

Definitions

  • Embodiments of the invention relate to an OLED display panel.
  • a display panel using an OLED (Organic Light-Emitting Diode) device has excellent response performance, wide viewing angle, high brightness, low power consumption, and is a self-luminous display, which is considered to have great development prospects.
  • Next generation display technology is considered to have great development prospects.
  • the OLED device stacks a plurality of organic layers between a transparent anode and a cathode.
  • a forward voltage is applied to the device, holes and electrons are injected from the anode and the cathode into the organic light-emitting layer and in the organic light-emitting layer, respectively, under the action of an external electric field.
  • Composite luminescence In order to improve the efficiency of cathode electron injection, it is necessary to reduce the work function of the cathode, and a living wave metal such as magnesium or silver is usually selected. However, magnesium and silver easily react with the influent water vapor and oxygen.
  • the hole transport layer (HTL) and the electron transport layer (ETL) in the OLED are also very sensitive to water vapor and oxygen, and are easily degraded, causing device failure.
  • An effective package prevents moisture and oxygen from immersing, prevents aging of organic materials, and extends the life of OLED devices.
  • the OLED display panel must be packaged.
  • the main packaging methods include cover-type packaging and thin film encapsulation (TFE).
  • TFE thin film encapsulation
  • a buffer layer 12 is provided on a base substrate 11 of an OLED display panel, and a TFT is formed on the buffer layer 12.
  • the TFT includes a gate, a gate insulating layer, an active layer, a source, and a drain.
  • An interlayer insulating layer 18 is formed on the TFT.
  • An anode 13 is disposed on the interlayer insulating layer 18, and a pixel defining layer 19 is disposed on the anode 13.
  • the light emitting layer 14 is located in the opening of the pixel defining layer 19 and electrically connected to the anode 3, and the cathode 15 is located in the pixel defining layer 19 and the light emitting layer 14.
  • the upper layer is electrically connected to the light-emitting layer 14, the encapsulation layer 16 is located above the cathode 15, and the encapsulation layer 16 may be a plurality of layers.
  • water vapor and oxygen are immersed in the direction indicated by the arrow to react with a portion of the metal material in the device, thereby affecting the lifetime of the OLED.
  • an OLED display panel has a substrate having an OLED device thereon with an encapsulation layer over the OLED device.
  • the OLED display panel has a non-planar pattern structure in a peripheral region outside the display area, the encapsulation layer overlying the non-planar pattern structure.
  • the encapsulation layer is one or more layers.
  • the non-planar pattern structure is a groove, and the encapsulation layer fills the groove.
  • the width w of the groove and the minimum thickness t of the single-layer encapsulation layer satisfy the relationship of w>t ⁇ 0.5w.
  • the non-planar pattern structure is a protrusion
  • the encapsulation layer encloses the protrusion
  • the pitch d between the protrusions and the minimum thickness t of the single-layer encapsulation layer satisfy the relationship of d>t ⁇ 0.5d.
  • a TFT connected to the OLED device is further formed on the base substrate, the TFT includes a gate, a gate insulating layer, an active layer, a source and a drain; and the gate insulating layer extends to the In the peripheral region, the non-planar pattern structure is formed in the gate insulating layer by patterning the gate insulating layer.
  • a TFT connected to the OLED device is further formed on the base substrate, the TFT is covered by an interlayer insulating layer; the interlayer insulating layer extends to the peripheral region, and the non-planar graphic structure passes The interlayer insulating layer is patterned to be formed in the interlayer insulating layer.
  • the OLED display panel further includes a pixel defining layer, at least the light emitting layer of the OLED device is located in an opening of the pixel defining layer; the pixel defining layer extends to the peripheral region, and the non-planar graphic structure passes The pixel defining layer is patterned to be formed in the pixel defining layer.
  • the non-planar pattern structure is formed in the base substrate by patterning the base substrate.
  • the cross-sectional shape of the groove or protrusion is curved, triangular, rectangular or trapezoidal.
  • FIG. 1 is a schematic structural view of an OLED display panel provided by the prior art
  • FIG. 2 is a schematic structural view of an OLED display panel according to an embodiment of the present invention.
  • FIG. 3 is a schematic diagram showing a setting position of a non-planar graphic structure in an OLED display panel according to an embodiment of the present invention
  • Figure 5 shows a non-planar graphic structure of the embodiment of the present invention as a bump
  • Figure 6 illustrates the relationship of the non-planar pattern structure to the thickness of the encapsulation layer of an embodiment of the invention.
  • Embodiments of the present invention provide an OLED display panel.
  • the OLED display panel includes a base substrate 1 having a buffer layer 2 thereon, and a TFT formed on the buffer layer 2.
  • the TFT includes a gate electrode 21, a gate insulating layer 22, an active layer 23, a source electrode 24, and a drain electrode 25.
  • the TFT is covered with an interlayer insulating layer 8, which has an opening.
  • An anode 3 is provided on the interlayer insulating layer 8, and the anode 3 is connected to the drain electrode 25 of the TFT through the opening of the interlayer insulating layer 8.
  • the anode 3 is a pixel defining layer 9
  • the light emitting layer 4 is located in the opening of the pixel defining layer and electrically connected to the anode 3 .
  • the cathode 5 is located above the pixel defining layer 9 and the light emitting layer 4 and electrically connected to the light emitting layer 4 .
  • the encapsulation layer 6 can be multiple layers.
  • the OLED display panel also has a non-planar graphic structure 7.
  • the non-planar graphic structure 7 is a raised or grooved pattern. As shown in FIG. 4, in the case where the non-planar pattern structure is a groove, the encapsulation layer 6 fills the groove. As shown in FIG.
  • the encapsulation layer 6 encloses the protrusions.
  • the cross-sectional shape of the groove or the protrusion may be an arc, a triangle, a rectangle, or a ladder. Shape (including inverted trapezoid).
  • the cross-sectional shape of the groove or the protrusion may be any other shape, which is not limited in the embodiment of the present invention.
  • the OLED display panel includes a display area 20 and a peripheral area 10 located outside the display area 20.
  • the display area 20 includes a plurality of pixel units 30.
  • the non-planar graphic structure 7 is located in the peripheral region 10.
  • the non-planar pattern structure 7 is formed in the base substrate 1 by patterning the base substrate 1.
  • the gate insulating layer 22 extends to the peripheral region 10 of the OLED display panel, and the non-planar pattern structure 7 is formed in the gate insulating layer 22 by patterning the gate insulating layer 22, as shown in FIG.
  • the interlayer insulating layer 8 extends to the peripheral region 10 of the OLED display panel, and the non-planar pattern structure 7 is formed in the interlayer insulating layer 8 by patterning the interlayer insulating layer 8.
  • the pixel defining layer 9 extends to the peripheral region 10 of the OLED display panel, and the non-planar pattern structure 7 is formed in the interlayer insulating layer 8 by patterning the pixel defining layer 9.
  • the stress performance of the OLED display panel can be better improved.
  • the process cost can be reduced and the process precision can be improved.
  • the gate insulating layer 22 is formed of silicon oxide, silicon nitride, silicon oxynitride, or a combination thereof.
  • the interlayer insulating layer 8 is formed of silicon oxide, silicon nitride, silicon oxynitride, or a combination thereof.
  • the pixel defining layer 9 is formed of silicon oxide, silicon nitride, silicon oxynitride, or a combination thereof.
  • the bonding force between the encapsulation layer and the substrate is remarkably enhanced, and the path of oxygen and water vapor entering the device is significantly extended, thereby reducing the entry of oxygen and moisture into the OLED display panel.
  • the non-planar pattern structure 7 is a groove, as shown in FIG. 6(1), the width of the groove is w, and the minimum thickness of the single-layer encapsulation layer is t, for example, t and w satisfy the relationship of w>t ⁇ 0.5w.
  • the encapsulation layer can achieve sufficient filling of the grooves so that the infiltration path of oxygen and water vapor is sufficiently long.
  • t 0.5w
  • the OLED display panel at this time is least affected by oxygen and moisture.
  • the spacing between the protrusions is d
  • the minimum thickness of the single-layer encapsulation layer is t, for example, t and d satisfy d>t ⁇ 0.5d.
  • the encapsulating layer can achieve sufficient filling of the depressions between the projections so that the infiltration path of oxygen and moisture is sufficiently long.
  • t 0.5d
  • the OLED display panel at this time is least affected by oxygen and moisture.
  • the OLED display panel of the embodiment of the present invention by forming a non-planar pattern structure such as a groove or a protrusion in a peripheral region of the OLED display panel, the infiltration path of oxygen and water vapor and the like are obviously extended, and the encapsulation layer and the substrate are significantly enhanced.
  • the combined force reduces the effects of oxygen and moisture on device performance.
  • the groove width, the distance between the protrusions and the thickness of the encapsulation layer the influence of oxygen and water vapor on the device performance can be further reduced.

Abstract

一种OLED显示面板,该OLED显示面板具有衬底基板(1),所述衬底基板(1)上具有OLED器件,在所述OLED器件之上具有封装层(6)。该OLED显示面板在其显示区域外侧的周边区域中具有非平面图形结构(7),所述封装层(6)覆盖于所述非平面图形结构(7)上。

Description

OLED显示面板 技术领域
本发明的实施例涉及一种OLED显示面板。
背景技术
采用OLED(Organic Light-Emitting Diode,有机发光二极管)器件的显示面板具有响应速度快、视角宽、亮度高、低功耗等优异性能,并且为自发光显示器,被认为是具有很大发展前景的下一代显示技术。
OLED器件在透明阳极和阴极之间堆叠多层有机层,当器件上加正向电压时,在外电场的作用下,空穴和电子分别由阳极和阴极注入到有机发光层并在有机发光层中复合发光。为提高阴极电子注入效率,需要降低阴极的功函数,通常选用活波金属,例如镁、银。但是镁、银易与渗入进来的水汽、氧气发生反应。另外,OLED中的空穴传输层(HTL:hole transport layer)及电子传输层(ETL:electron transport layer)对水汽、氧气也非常敏感,很容易发生衰退,引起器件失效。
有效的封装可以防止水汽和氧气的浸入,防止有机材料老化,延长OLED器件寿命。为此,OLED显示面板必须进行封装。目前,主要的封装方式包括盖板式封装和薄膜封装(TFE:thin film encapsulation)。但是不论何种封装方式,在封装结构与器件的接触部分,由于界面接触及应力不匹配等原因会形成一条水汽氧气入侵的路径,直接影响OLED寿命。
如图1所示,在OLED显示面板的衬底基板11上具有缓冲层12,在该缓冲层12上形成有TFT。该TFT包括栅极、栅绝缘层、有源层、源极和漏极。在TFT上形成有层间绝缘层18。在层间绝缘层18上具有阳极13,阳极13上为像素限定层19,发光层14位于像素限定层19的开口中并与阳极3电连接,阴极15位于像素限定层19和发光层14之上并与发光层14电连接,封装层16位于阴极15之上,封装层16可以为多层。在该OLED显示面板中,水汽和氧气会沿着箭头所示的方向浸入,与器件中的部分金属材料发生反应,从而影响OLED寿命。
发明内容
根据本发明的实施例,提供一种OLED显示面板。该OLED显示面板具有衬底基板,所述衬底基板上具有OLED器件,在所述OLED器件之上具有封装层。该OLED显示面板在其显示区域外侧的周边区域中具有非平面图形结构,所述封装层覆盖于所述非平面图形结构上。
例如,所述封装层为一层或多层。
例如,所述非平面图形结构为凹槽,所述封装层填充所述凹槽。
例如,所述凹槽的宽度w与单层封装层的最小厚度t满足w>t≥0.5w的关系。
例如,所述凹槽的宽度w与单层封装层的最小厚度t满足t=0.5w的关系。
例如,所述非平面图形结构为凸起,所述封装层将所述凸起包裹在内。
例如,所述凸起之间的间距d与单层封装层的最小厚度t满足d>t≥0.5d的关系。
例如,所述凸起之间的间距d与单层封装层的最小厚度t满足t=0.5d的关系。
例如,在所述衬底基板上还形成有与所述OLED器件连接的TFT,所述TFT包括栅极、栅绝缘层、有源层、源极和漏极;所述栅绝缘层延伸到所述周边区域,所述非平面图形结构通过图案化所述栅绝缘层而形成在所述栅绝缘层中。
例如,在所述衬底基板上还形成有与所述OLED器件连接的TFT,该TFT被层间绝缘层覆盖;所述层间绝缘层延伸到所述周边区域,所述非平面图形结构通过图案化所述层间绝缘层而形成在所述层间绝缘层中。
例如,所述OLED显示面板还包括像素限定层,至少所述OLED器件的发光层位于所述像素限定层的开口中;所述像素限定层延伸到所述周边区域,所述非平面图形结构通过图案化所述像素限定层而形成在所述像素限定层中。
例如,所述非平面图形结构通过图案化所述衬底基板而形成在所述衬底基板中。
例如,所述凹槽或者凸起的横截面形状为弧形、三角形、矩形或者梯形。
附图说明
为了更清楚地说明本发明实施例的技术方案,下面将对实施例的附图作简单地介绍,显而易见地,下面描述中的附图仅仅涉及本发明的一些实施例,而非对本发明的限制。
图1是现有技术提供的OLED显示面板结构示意图;
图2是本发明实施例的OLED显示面板结构示意图;
图3是本发明实施例的OLED显示面板中非平面图形结构的设置位置示意图;
图4示出本发明实施例的非平面图形结构为凹槽;
图5示出本发明实施例的非平面图形结构为凸起;
图6示出发明实施例的非平面图形结构与封装层厚度的关系。
具体实施方式
为使本发明实施例的目的、技术方案和优点更加清楚,下面将结合附图,对本发明实施例的技术方案进行清楚、完整地描述。显然,所描述的实施例是本发明的一部分实施例,而不是全部的实施例。基于所描述的本发明的实施例,本领域普通技术人员在无需创造性劳动的前提下所获得的所有其他实施例,都属于本发明保护的范围。
本发明的实施例提供一种OLED显示面板。如图2所示,该OLED显示面板包括衬底基板1,衬底基板1上具有缓冲层2,在缓冲层2上形成有TFT。该TFT包括栅极21、栅绝缘层22、有源层23、源极24和漏极25。在TFT上覆盖有层间绝缘层8,该层间绝缘层8具有开口。在层间绝缘层8上具有阳极3,阳极3通过层间绝缘层8的开口连接到TFT的漏极25。阳极3上为像素限定层9,发光层4位于像素限定层的开口中并与阳极3电连接,阴极5位于像素限定层9和发光层4之上并与发光层4电连接,封装层6位于阴极5之上。例如,封装层6可以为多层。进一步地,该OLED显示面板还具有非平面图形结构7。例如,该非平面图形结构7为凸起或凹槽图形。如图4所示的是非平面图形结构为凹槽的情形,封装层6填充所述凹槽。如图5所示的是非平面图形结构为凸起的情形,封装层6将所述凸起包裹在内。如图4、图5所示,所述凹槽或者凸起的横截面形状可为弧形、三角形、矩形、梯 形(包括倒梯形)。当然,所述凹槽或者凸起的横截面形状还可以是其他任意的形状,本发明实施例对此不进行限制。
如图3所示,该OLED显示面板包括显示区域20和位于显示区域20外侧的周边区域10。显示区域20包括多个像素单元30。例如,所述非平面图形结构7位于所述周边区域10。
例如,非平面图形结构7通过图案化衬底基板1而形成在衬底基板1中。
例如,栅绝缘层22延伸到OLED显示面板的周边区域10,非平面图形结构7通过图案化栅绝缘层22而形成在栅绝缘层22中,如图2所示。
例如,层间绝缘层8延伸到OLED显示面板的周边区域10,非平面图形结构7通过图案化层间绝缘层8而形成在层间绝缘层8中。
例如,像素限定层9延伸到OLED显示面板的周边区域10,非平面图形结构7通过图案化像素限定层9而形成在层间绝缘层8中。
当非平面图形结构7形成在栅绝缘层22中时,可以更好改善OLED显示面板的应力性能。
当非平面图形结构7形成在栅绝缘层22、层间绝缘层8或像素限定层9中时,可以降低工艺成本并提高工艺精度。
例如,栅绝缘层22由氧化硅、氮化硅、氮氧化硅或它们的组合形成。
例如,层间绝缘层8由氧化硅、氮化硅、氮氧化硅或它们的组合形成。
例如,像素限定层9由氧化硅、氮化硅、氮氧化硅或它们的组合形成。
如图2所示,由于非平面图形结构7的存在,封装层与基板之间的结合力明显增强,氧气和水汽进入器件中的路径明显延长,从而降低了氧气和水汽的进入对OLED显示面板的性能和寿命的影响。
当非平面图形结构7为凹槽时,如图6(1)所示,凹槽的宽度为w,单层封装层的最小厚度为t,例如t和w满足w>t≥0.5w的关系,此时封装层能实现对凹槽的充分填充以使得氧气和水汽的渗入路径足够长。例如,t=0.5w,在其他因素完全相同的情形下,此时的OLED显示面板受到氧气和水汽的影响最小。
当非平面图形结构为凸起时,如图6(2)所示,凸起之间的间距为d,单层封装层的最小厚度为t,例如t和d满足d>t≥0.5d的关系,此时封装层能实现对凸起之间的凹陷的充分填充以使得氧气和水汽的渗入路径足够长。 例如,t=0.5d,在其他因素完全相同的情形下,此时的OLED显示面板受到氧气和水汽的影响最小。
在本发明实施例的OLED显示面板中,通过在OLED显示面板的周边区域形成凹槽或凸起等非平面图形结构,明显延长了氧气和水汽等的渗入路径并明显增强了封装层与基板之间的结合力,从而降低了氧气和水汽等对器件性能的影响。同时,通过限定凹槽宽度、凸起之间的距离与封装层厚度之间的关系,可以进一步降低氧气和水汽等对器件性能的影响。
以上所述仅是本发明的示范性实施方式,而非用于限制本发明的保护范围,本发明的保护范围由所附的权利要求确定。
本申请要求于2014年5月29日递交的第201420282295.1号中国专利申请的优先权,在此全文引用上述中国专利申请公开的内容以作为本申请的一部分。

Claims (13)

  1. 一种OLED显示面板,具有衬底基板,所述衬底基板上具有OLED器件,在所述OLED器件之上具有封装层,其中该OLED显示面板在其显示区域外侧的周边区域中具有非平面图形结构,所述封装层覆盖于所述非平面图形结构上。
  2. 如权利要求1所述的OLED显示面板,其中所述封装层为一层或多层。
  3. 如权利要求2所述的OLED显示面板,其中所述非平面图形结构为凹槽,所述封装层填充所述凹槽。
  4. 如权利要求3所述的OLED显示面板,其中所述凹槽的宽度w与单层封装层的最小厚度t满足w>t≥0.5w的关系。
  5. 如权利要求4所述的OLED显示面板,其中所述凹槽的宽度w与单层封装层的最小厚度t满足t=0.5w的关系。
  6. 如权利要求2所述的OLED显示面板,其中所述非平面图形结构为凸起,所述封装层将所述凸起包裹在内。
  7. 如权利要求6所述的OLED显示面板,其中所述凸起之间的间距d与单层封装层的最小厚度t满足d>t≥0.5d的关系。
  8. 如权利要求7所述的OLED显示面板,其中所述凸起之间的间距d与单层封装层的最小厚度t满足t=0.5d的关系。
  9. 如权利要求1-8任一项所述的OLED显示面板,其中
    在所述衬底基板上还形成有与所述OLED器件连接的TFT,所述TFT包括栅极、栅绝缘层、有源层、源极和漏极;
    所述栅绝缘层延伸到所述周边区域,所述非平面图形结构通过图案化所述栅绝缘层而形成在所述栅绝缘层中。
  10. 如权利要求1-8任一项所述的OLED显示面板,其中
    在所述衬底基板上还形成有与所述OLED器件连接的TFT,该TFT被层间绝缘层覆盖;
    所述层间绝缘层延伸到所述周边区域,所述非平面图形结构通过图案化所述层间绝缘层而形成在所述层间绝缘层中。
  11. 如权利要求1-8任一项所述的OLED显示面板,其中
    所述OLED显示面板还包括像素限定层,至少所述OLED器件的发光层位于所述像素限定层的开口中;
    所述像素限定层延伸到所述周边区域,所述非平面图形结构通过图案化所述像素限定层而形成在所述像素限定层中。
  12. 如权利要求1-8任一项所述的OLED显示面板,其中所述非平面图形结构通过图案化所述衬底基板而形成在所述衬底基板中。
  13. 如权利要求3或6所述的OLED显示面板,其中所述凹槽或者凸起的横截面形状为弧形、三角形、矩形或者梯形。
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