WO2016165190A1 - Oled显示器件 - Google Patents

Oled显示器件 Download PDF

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Publication number
WO2016165190A1
WO2016165190A1 PCT/CN2015/079540 CN2015079540W WO2016165190A1 WO 2016165190 A1 WO2016165190 A1 WO 2016165190A1 CN 2015079540 W CN2015079540 W CN 2015079540W WO 2016165190 A1 WO2016165190 A1 WO 2016165190A1
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pixel
isolation layer
oled display
display device
pixel isolation
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PCT/CN2015/079540
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English (en)
French (fr)
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吕晓文
石龙强
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深圳市华星光电技术有限公司
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Application filed by 深圳市华星光电技术有限公司 filed Critical 深圳市华星光电技术有限公司
Priority to US14/763,832 priority Critical patent/US20160307975A1/en
Publication of WO2016165190A1 publication Critical patent/WO2016165190A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks

Definitions

  • the present invention relates to the field of display technologies, and in particular, to an OLED display device.
  • OLED Organic Light Emitting Display
  • the OLED display device is a self-emissive display device, and generally includes a pixel electrode respectively serving as an anode, a cathode, a common electrode, and an organic light-emitting layer disposed between the pixel electrode and the common electrode, so that an appropriate voltage is applied to the anode. When it is with the cathode, it emits light from the organic light-emitting layer.
  • the organic light-emitting layer includes a hole injection layer provided on the anode, a hole transport layer provided on the hole injection layer, a light-emitting layer provided on the hole transport layer, and an electron transport layer provided on the light-emitting layer.
  • the electron injection layer on the electron transport layer has a light-emitting mechanism in which electrons and holes are injected from the cathode and the anode to the electron injection layer and the hole injection layer, respectively, and the electrons and holes pass through the electron transport layer and
  • the hole transport layer migrates to the light-emitting layer and meets in the light-emitting layer to form excitons and excite the light-emitting molecules, which undergo radiation relaxation to emit visible light.
  • an OLED display device has a plurality of pixel regions arranged in an array, and a pixel isolation layer having a plurality of openings separates each pixel region from other pixel regions, and each opening corresponds to one pixel region.
  • the electrode is disposed in the opening corresponding to the organic light emitting layer, and the common electrode covers the organic light emitting layer and the pixel isolation layer of each pixel region.
  • the organic light-emitting layer is formed of an organic material and is very sensitive to moisture, oxygen, and the like, it is liable to deteriorate and deteriorate due to intrusion of moisture, oxygen, or the like.
  • some of the pixel isolation layers are made of an organic material, and when the pixel isolation layer of the organic material has an interface with the organic light-emitting layer, moisture, oxygen, and the like in the pixel isolation layer are organic from the interface.
  • the luminescent layer diffuses, causing a change in the electronic state in the organic luminescent layer, losing the ideal electric field luminescent property, degrading the organic luminescent layer, and affecting the display effect.
  • a pixel isolation layer is formed by using an inorganic material having a lower moisture content and oxygen content.
  • the sidewall constituting the opening of the pixel isolation layer is opposite to The substrate is erected at an angle of approximately 90 degrees, resulting in an organic light-emitting layer corresponding to the sidewall position and the common electrode at other positions
  • the thickness is significantly thinner, even causing discontinuity, moisture and oxygen, etc.
  • An object of the present invention is to provide an OLED display device capable of solving the problem of deterioration of an organic light-emitting layer caused by sidewalls of a pixel isolation layer, preventing discontinuity of the position of the organic light-emitting layer and the common electrode at the sidewall of the pixel isolation layer, and avoiding the common electrode. Short-circuiting with the anode and cathode of the pixel electrode, that is, the OLED display device, improves the display effect.
  • an OLED display device comprising:
  • each of the pixel regions includes a pixel electrode, an organic light emitting layer, and a common electrode which are sequentially stacked on the substrate;
  • a pixel isolation layer having a plurality of openings, the pixel isolation layer separating each pixel region from other pixel regions, the openings being surrounded by sidewalls of the pixel isolation layer, each opening corresponding to one pixel region;
  • the pixel electrode and the organic light emitting layer are located in the opening, and the organic light emitting layer covers the sidewall of the pixel isolation layer, and the common electrode covers the upper surface of the organic light emitting layer and the pixel isolation layer;
  • the material of the pixel isolation layer is an inorganic material
  • the sidewall of the pixel isolation layer includes a straight portion disposed from top to bottom, and a curved portion connecting the straight portion; the straight portion is perpendicular to the substrate, The height of the straight portion is smaller than the height of the curved portion, and at least the angle between the cut surface at the partial position of the curved portion and the substrate is less than 85°.
  • the curved portion is recessed inward with respect to the pixel isolation layer.
  • the curved portion protrudes outward with respect to the pixel isolation layer.
  • the material of the pixel isolation layer is silicon nitride.
  • the pixel isolation layer is composed of a plurality of silicon nitride layers having different nitrogen composition ratios.
  • the pixel isolation layer is formed by a plasma CVD process, and an opening of the pixel isolation layer is formed by an etching process.
  • the pixel electrode is an anode of an OLED display device
  • the common electrode is a cathode of an OLED display device.
  • the material of the pixel electrode is a metal oxide having a high work function
  • the material of the common electrode is a metal having high conductivity and a low work function.
  • the pixel electrode is a cathode of an OLED display device
  • the common electrode is an anode of an OLED display device.
  • the material of the pixel electrode is a metal having a high electrical conductivity and a low work function
  • the material of the common electrode is a metal oxide having a high work function
  • the invention also provides an OLED display device, comprising:
  • each of the pixel regions includes a pixel electrode, an organic light emitting layer, and a common electrode which are sequentially stacked on the substrate;
  • a pixel isolation layer having a plurality of openings, the pixel isolation layer separating each pixel region from other pixel regions, the openings being surrounded by sidewalls of the pixel isolation layer, each opening corresponding to one pixel region;
  • the pixel electrode and the organic light emitting layer are located in the opening, and the organic light emitting layer covers the sidewall of the pixel isolation layer, and the common electrode covers the upper surface of the organic light emitting layer and the pixel isolation layer;
  • the material of the pixel isolation layer is an inorganic material
  • the sidewall of the pixel isolation layer includes a straight portion disposed from top to bottom, and a curved portion connecting the straight portion; the straight portion is perpendicular to the substrate, The height of the straight portion is smaller than the height of the curved portion, at least the angle between the cut surface at the partial position of the curved portion and the substrate is less than 85°;
  • the curved portion is recessed inward with respect to the pixel isolation layer
  • the material of the pixel isolation layer is silicon nitride
  • the pixel isolation layer is composed of a plurality of silicon nitride layers having different nitrogen composition ratios.
  • the invention provides an OLED display device, which uses an inorganic material to form a pixel isolation layer on the one hand, which greatly reduces moisture and oxygen diffused from the sidewall of the pixel isolation layer into the organic light-emitting layer, and isolates the pixel on the one hand.
  • the sidewall of the layer is disposed as a straight portion and a curved portion from top to bottom, and the height of the disposed straight portion is smaller than the height of the curved portion, and at least the angle between the cut surface at the partial position of the curved portion and the substrate is less than 85
  • the thickness of the organic light-emitting layer covering the sidewall of the pixel isolation layer and the common electrode covering the organic light-emitting layer is uniform, preventing the organic light-emitting layer and the common electrode from being interrupted at the position of the sidewall of the pixel isolation layer, preventing moisture and oxygen.
  • the penetration into the organic light-emitting layer can solve the problem of deterioration of the organic light-emitting layer caused by the sidewall of the pixel isolation layer, avoiding the cathode-anode short circuit of the common electrode and the pixel electrode, that is, the OLED display device, improving the display effect, and improving the life of the OLED display device.
  • FIG. 1 is a schematic cross-sectional structural view of a pixel region in an OLED display device of the present invention
  • Figure 2 is a cross-sectional view showing a first embodiment of the shape of the side wall of the pixel isolation layer corresponding to Figure 1;
  • FIG. 3 is a cross-sectional view showing a second embodiment of the shape of the sidewall of the pixel isolation layer corresponding to FIG. 1.
  • the present invention provides an OLED display device, including:
  • each pixel region comprising a pixel electrode 2, an organic light-emitting layer 3, and a common electrode 4 which are sequentially stacked on the substrate 1;
  • a pixel isolation layer 5 having a plurality of openings, the pixel isolation layer 5 isolating each of the pixel regions from the other pixel regions, the openings being surrounded by the pixel isolation layer sidewalls 51, each opening corresponding to one pixel region .
  • the pixel electrode 2 and the organic light-emitting layer 3 are located in the opening, and the organic light-emitting layer 3 covers the pixel isolation layer sidewall 51, and the common electrode 4 covers the organic light-emitting layer 3 and the pixel The upper surface of the isolation layer 5.
  • the material of the pixel isolation layer 5 is an inorganic material, and the pixel isolation layer sidewall 51 includes a linear portion 511 disposed from top to bottom and a curved portion 512 connecting the linear portion 511; the linear portion 511 is perpendicular to In the substrate 1, the height of the straight portion 511 is smaller than the height of the curved portion 512, and at least the angle between the cut surface at the partial position of the curved portion 512 and the substrate 1 is less than 85°.
  • FIG. 2 illustrates a first embodiment of the shape of the pixel isolation layer sidewall 51, the curved portion 512 being recessed inwardly relative to the pixel isolation layer 5, the section at a portion of the curved portion 512 The angle between the substrate 1 and the substrate 1 is less than 85°.
  • the curved portion 512 is connected to the straight portion 511 in a tangential manner.
  • FIG 3 illustrates a second embodiment of the shape of the side wall 51 of the pixel isolation layer, the curved portion 512 protruding outward with respect to the pixel isolation layer 5, and a section at a portion of the curved portion 512
  • the angle between the substrate 1 and the substrate 1 is less than 85°.
  • the curved portion 512 and the straight portion 511 are connected in contact with each other.
  • the material of the pixel isolation layer 5 is an inorganic material having a low moisture content and a low oxygen content, moisture and oxygen diffused from the pixel isolation layer sidewall 51 into the organic light-emitting layer 3 can be greatly reduced; the pixel isolation layer sidewall 51
  • the shape of the straight portion 511 and the curved portion 512 can make the thickness of the organic light-emitting layer 3 covering the pixel isolation layer sidewall 51 and the common electrode 4 covering the organic light-emitting layer 3 uniform, and due to the straight line
  • the height of the portion 511 is relatively low, and the probability that the organic light-emitting layer 3 covering the straight portion 511 and the common electrode 4 are interrupted is extremely low, and the position of the organic light-emitting layer 3 and the common electrode 4 at the side wall 51 of the pixel isolation layer is prevented from being interrupted.
  • a thin film transistor, a scan line, and a data signal line are formed in the substrate 1.
  • the thin film transistor is composed of a gate electrode, a semiconductor layer, and a source/drain, and the pixel electrode 2 is connected to a source/drain of the thin film transistor.
  • the arrangement and connection of the specific thin film transistor, the scan line, and the data signal line in the substrate 1 are prior art and will not be described in detail herein.
  • the material of the pixel isolation layer 5 is silicon nitride
  • the pixel isolation layer 5 is fabricated by a plasma chemical vapor deposition (CVD) process
  • the opening of the pixel isolation layer 5 is formed by an etching process.
  • the pixel isolation layer 5 is disposed to be formed by superposing a plurality of silicon nitride layers having different nitrogen composition ratios to form the The shape of the pixel isolation layer sidewall 51 is desired.
  • the pixel electrode 2 can be used as an anode of an OLED display device, and the common electrode 4 can be used as a cathode of an OLED display device.
  • the material of the pixel electrode 2 is a metal oxide having a high work function, such as indium tin oxide (ITO), indium zinc oxide (IZO), etc.; the material of the common electrode 4 is high in conductivity.
  • a low work function metal such as silver (Ag), magnesium (Mg), aluminum (Al), lithium (Li), gold (Au), nickel (Ni) or calcium (Ca).
  • the pixel electrode 2, that is, the anode transmits light
  • the common electrode 4, that is, the cathode acts as an optical path.
  • the pixel electrode 2 can also be used as a cathode of an OLED display device, and the common electrode 4 can be used as an anode of an OLED display device.
  • the material of the pixel electrode 2 is a metal having high conductivity and a low work function, such as Ag, Mg, Al, Li, Au, Ni, or Ca; and the material of the common electrode 4 is high.
  • a metal oxide of a work function such as ITO, IZO, or the like.
  • the pixel electrode 2, that is, the cathode acts as an optical path
  • the common electrode 4, that is, the anode transmits the optical path. use.
  • the organic light-emitting layer 3 includes a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, and an electron injection layer, which are the same as those in the prior art and will not be described in detail herein.
  • the OLED display device of the present invention forms an pixel isolation layer by using an inorganic material on the one hand, and greatly reduces moisture and oxygen diffused from the sidewall of the pixel isolation layer to the organic light-emitting layer.
  • the sidewall of the pixel isolation layer is self-contained.
  • the top portion is disposed as a straight portion and a curved portion, and the height of the straight portion is smaller than the height of the curved portion, and at least the angle between the cut surface at the partial portion of the curved portion and the substrate is less than 85°, so as to cover
  • the organic light-emitting layer on the sidewall of the pixel isolation layer and the common electrode covering the organic light-emitting layer have a uniform thickness, preventing the organic light-emitting layer and the common electrode from being interrupted at the position of the sidewall of the pixel isolation layer, preventing moisture and oxygen from penetrating into the organic light-emitting layer.
  • the layer can solve the problem of deterioration of the organic light-emitting layer caused by the sidewall of the pixel isolation layer, avoiding the cathode-anode short circuit of the common electrode and the pixel electrode, that is, the OLED display device, improving the display effect, and improving the life of the OLED display device.

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Abstract

一种OLED显示器件，包括：基板(1)、在每一像素区内于基板(1)上依次层叠设置的像素电极(2)、有机发光层(3)、公共电极(4)及具有多个开口的像素隔离层(5)，所述开口由像素隔离层侧壁(51)围拢而成，每一开口对应一个像素区；像素隔离层(5)的材料为无机材料，像素隔离层侧壁(51)包括自上而下设置的直线部(511)、及连接所述直线部(511)的曲线部(512)。能够解决由像素隔离层侧壁(51)引起的有机发光层(3)的劣化问题，防止有机发光层(3)与公共电极(4)在像素隔离层侧壁(51)的位置产生间断，避免公共电极(4)与像素电极(2)即OLED显示器件的阴阳极短路，改善显示效果。

Description

OLED显示器件 技术领域
本发明涉及显示技术领域，尤其涉及一种OLED显示器件。
背景技术
有机电致发光显示(Organic Light Emitting Display，OLED)器件不仅具有十分优异的显示性能，还具有自发光、结构简单、超轻薄、响应速度快、宽视角、低功耗及可实现柔性显示等特性，被誉为“梦幻显示器”，得到了各大显示器厂家的青睐，已成为显示技术领域中第三代显示器件的主力军。
OLED显示器件属于自发射型显示设备，通常包括分别用作阳极、与阴极的像素电极、公共电极、以及设在像素电极与公共电极之间的有机发光层，使得在适当的电压被施加于阳极与阴极时，从有机发光层发光。有机发光层包括了设于阳极上的空穴注入层、设于空穴注入层上的空穴传输层、设于空穴传输层上的发光层、设于发光层上的电子传输层、设于电子传输层上的电子注入层，其发光机理为在一定电压驱动下，电子和空穴分别从阴极和阳极注入到电子注入层和空穴注入层，电子和空穴分别经过电子传输层和空穴传输层迁移到发光层，并在发光层中相遇，形成激子并使发光分子激发，后者经过辐射弛豫而发出可见光。
一般而言，OLED显示器件具有多个呈阵列式排布的像素区，一具有多个开口的像素隔离层将每个像素区与其它像素区隔离开，每一开口对应一个像素区，上述像素电极与有机发光层对应设置在所述开口内，公共电极则覆盖于每一像素区的有机发光层与像素隔离层上。
由于所述有机发光层由有机材料形成，对水分、氧等非常敏感，故易于因水分、氧等的侵入而劣化变质。现有技术中，像素隔离层有的采用有机材料制成，发现当有机材料的像素隔离层具有与有机发光层接触的界面时，像素隔离层中的水分、氧等就会从该界面向有机发光层扩散，引起有机发光层内电子状态的变化，丧失理想的电场发光特性，使有机发光层劣化，影响显示效果。为了改善有机材料像素隔离层所带来的问题，出现了采用水分和氧含量较低的无机材料制作像素隔离层，然而采用无机材料制作像素隔离层时，构成像素隔离层开口的侧壁相对于基板以接近90度的角度直立，造成了对应于侧壁位置处的有机发光层及公共电极较其它位置的 厚度明显变薄，甚至造成间断，水分和氧等将从该公共电极明显变薄或间断处进入有机发光层，造成有机发光层的发光特性劣化，此外，当有机发光层在侧壁位置产生间断时，也可能使公共电极与像素电极之间的距离十分接近，导致两个电极短路，对有机发光层造成破坏。
发明内容
本发明的目的在于提供一种OLED显示器件，能够解决由像素隔离层侧壁引起的有机发光层的劣化问题，防止有机发光层与公共电极在像素隔离层侧壁的位置产生间断，避免公共电极与像素电极即OLED显示器件的阴阳极短路，改善显示效果。
为实现上述目的，本发明提供一种OLED显示器件，包括：
基板；
设于所述基板上的多个呈阵列式排布的像素区，每一像素区包括于所述基板上依次层叠设置的像素电极、有机发光层、与公共电极；
及具有多个开口的像素隔离层，所述像素隔离层将每个像素区与其它像素区隔离开，所述开口由像素隔离层侧壁围拢而成，每一开口对应一个像素区；
其中，所述像素电极、及有机发光层位于所述开口内，且所述有机发光层覆盖所述像素隔离层侧壁，所述公共电极覆盖所述有机发光层及像素隔离层的上表面；
所述像素隔离层的材料为无机材料，所述像素隔离层侧壁包括自上而下设置的直线部、及连接所述直线部的曲线部；所述直线部垂直于所述基板，所述直线部的高度小于所述曲线部的高度，至少所述曲线部的部分位置处的切面与基板之间的夹角小于85°。
所述曲线部相对于所述像素隔离层向内凹入。
所述曲线部相对于所述像素隔离层向外凸出。
所述像素隔离层的材料为氮化硅。
所述像素隔离层由氮组分比不同的多个氮化硅层叠加构成。
所述像素隔离层通过等离子体CVD工艺制作，像素隔离层的开口通过蚀刻工艺制作。
所述像素电极为OLED显示器件的阳极，所述公共电极为OLED显示器件的阴极。
所述像素电极的材料为具有高功函数的金属氧化物，所述公共电极的材料为具有高导电率和低功函数的金属。
所述像素电极为OLED显示器件的阴极，所述公共电极为OLED显示器件的阳极。
所述像素电极的材料为具有高导电率和低功函数的金属，所述公共电极的材料为具有高功函数的金属氧化物。
本发明还提供一种OLED显示器件，包括：
基板；
设于所述基板上的多个呈阵列式排布的像素区，每一像素区包括于所述基板上依次层叠设置的像素电极、有机发光层、与公共电极；
及具有多个开口的像素隔离层，所述像素隔离层将每个像素区与其它像素区隔离开，所述开口由像素隔离层侧壁围拢而成，每一开口对应一个像素区；
其中，所述像素电极、及有机发光层位于所述开口内，且所述有机发光层覆盖所述像素隔离层侧壁，所述公共电极覆盖所述有机发光层及像素隔离层的上表面；
所述像素隔离层的材料为无机材料，所述像素隔离层侧壁包括自上而下设置的直线部、及连接所述直线部的曲线部；所述直线部垂直于所述基板，所述直线部的高度小于所述曲线部的高度，至少所述曲线部的部分位置处的切面与基板之间的夹角小于85°；
其中，所述曲线部相对于所述像素隔离层向内凹入；
其中，所述像素隔离层的材料为氮化硅；
其中，所述像素隔离层由氮组分比不同的多个氮化硅层叠加构成。
本发明的有益效果：本发明提供的一种OLED显示器件，一方面采用无机材料形成像素隔离层，大大减少由像素隔离层侧壁向有机发光层中扩散的水分和氧，一方面将像素隔离层侧壁自上而下设置成直线部、及曲线部，且设置直线部的高度小于所述曲线部的高度，至少所述曲线部的部分位置处的切面与基板之间的夹角小于85°，使得覆盖于像素隔离层侧壁上的有机发光层及覆盖于有机发光层上的公共电极厚度均匀，防止有机发光层与公共电极在像素隔离层侧壁的位置产生间断，防止水分和氧渗透到有机发光层，能够解决由像素隔离层侧壁引起的有机发光层的劣化问题，避免公共电极与像素电极即OLED显示器件的阴阳极短路，改善显示效果，提升OLED显示器件的寿命。
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图说明
下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其它有益效果显而易见。
附图中，
图1为本发明的OLED显示器件中一个像素区的剖面结构示意图；
图2为对应于图1示意出像素隔离层侧壁形状的第一实施例的剖面图；
图3为对应于图1示意出像素隔离层侧壁形状的第二实施例的剖面图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图1，本发明提供一种OLED显示器件，包括：
基板1；
设于所述基板1上的多个呈阵列式排布的像素区，每一像素区包括于所述基板1上依次层叠设置的像素电极2、有机发光层3、与公共电极4；
及具有多个开口的像素隔离层5，所述像素隔离层5将每个像素区与其它像素区隔离开，所述开口由像素隔离层侧壁51围拢而成，每一开口对应一个像素区。
其中，所述像素电极2、及有机发光层3位于所述开口内，且所述有机发光层3覆盖所述像素隔离层侧壁51，所述公共电极4覆盖所述有机发光层3及像素隔离层5的上表面。
所述像素隔离层5的材料为无机材料，所述像素隔离层侧壁51包括自上而下设置的直线部511、及连接所述直线部511的曲线部512；所述直线部511垂直于所述基板1，所述直线部511的高度小于所述曲线部512的高度，至少所述曲线部512的部分位置处的切面与基板1之间的夹角小于85°。
值得一提的是，在保证至少所述曲线部512的部分位置处的切面与基板之间的夹角小于85°的前提下，不必要求所述曲线部512在所有位置处的切面一律与基板1构成小于85°的夹角。
图2示意出了所述像素隔离层侧壁51的形状的第一实施例，所述曲线部512相对于所述像素隔离层5向内凹入，所述曲线部512的部分位置处的切面与基板1之间的夹角小于85°。所述曲线部512与直线部511以相切方式连接。
图3示意出了所述像素隔离层侧壁51的形状的第二实施例，所述曲线部512相对于所述像素隔离层5向外凸出，所述曲线部512的部分位置处的切面与基板1之间的夹角小于85°。所述曲线部512与直线部511以相接方式连接。
由于所述像素隔离层5的材料为水分和氧含量较低的无机材料，能够大大减少由像素隔离层侧壁51向有机发光层3中扩散的水分和氧；所述像素隔离层侧壁51由所述直线部511、及曲线部512构成的形状能够使得覆盖于像素隔离层侧壁51上的有机发光层3及覆盖于有机发光层3上的公共电极4厚度均匀，且由于所述直线部511的高度比较低，覆盖该直线部511的有机发光层3与公共电极4产生间断的概率极低，防止了有机发光层3与公共电极4在像素隔离层侧壁51的位置产生间断，防止水分和氧渗透到有机发光层3，解决了由像素隔离层侧壁51引起的有机发光层3的劣化问题，避免了公共电极4与像素电极2短路，从而改善了显示效果，提升了OLED显示器件的寿命。
具体地，所述基板1内形成有薄膜晶体管、扫描线、数据信号线，薄膜晶体管由栅极、半导体层、及源/漏极构成，且所述像素电极2连接薄膜晶体管的源/漏极，具体的薄膜晶体管、扫描线、数据信号线在基板1内的布置与连接为现有技术，此处不再详述。
所述像素隔离层5的材料为氮化硅，所述像素隔离层5通过等离子体化学气相沉积(Chemical Vapor Deposition，CVD)工艺制作，像素隔离层5的开口通过蚀刻工艺制作。进一步地，由于氮化硅材料的氮组分比越低，蚀刻速率越快，将所述像素隔离层5设置成由氮组分比不同的多个氮化硅层叠加构成，以形成所述像素隔离层侧壁51所需的形状。
可将所述像素电极2作为OLED显示器件的阳极，将所述公共电极4作为OLED显示器件的阴极。此种情况下，所述像素电极2的材料为具有高功函数的金属氧化物，如氧化铟锡(ITO)、氧化铟锌(IZO)等；所述公共电极4的材料为具有高导电率和低功函数的金属，如银(Ag)、镁(Mg)、铝(Al)、锂(Li)、金(Au)、镍(Ni)或钙(Ca)等。所述像素电极2即阳极起光路透射作用，所述公共电极4即阴极起光路反射作用。
也可将所述像素电极2作为OLED显示器件的阴极，将所述公共电极4作为OLED显示器件的阳极。此种情况下，所述像素电极2的材料为具有高导电率和低功函数的金属，如Ag、Mg、Al、Li、Au、Ni或Ca等；所述公共电极4的材料为具有高功函数的金属氧化物，如ITO、IZO等。所述像素电极2即阴极起光路反射作用，所述公共电极4即阳极起光路透射作 用。
所述有机发光层3包括了空穴注入层、空穴传输层、发光层、电子传输层、及电子注入层，与现有技术无异，此处不再详述。
综上所述，本发明的OLED显示器件，一方面采用无机材料形成像素隔离层，大大减少由像素隔离层侧壁向有机发光层中扩散的水分和氧，一方面将像素隔离层侧壁自上而下设置成直线部、及曲线部，且设置直线部的高度小于所述曲线部的高度，至少所述曲线部的部分位置处的切面与基板之间的夹角小于85°，使得覆盖于像素隔离层侧壁上的有机发光层及覆盖于有机发光层上的公共电极厚度均匀，防止有机发光层与公共电极在像素隔离层侧壁的位置产生间断，防止水分和氧渗透到有机发光层，能够解决由像素隔离层侧壁引起的有机发光层的劣化问题，避免公共电极与像素电极即OLED显示器件的阴阳极短路，改善显示效果，提升OLED显示器件的寿命。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。

Claims (16)

  1. 一种OLED显示器件，包括：
    基板；
    设于所述基板上的多个呈阵列式排布的像素区，每一像素区包括于所述基板上依次层叠设置的像素电极、有机发光层、与公共电极；
    及具有多个开口的像素隔离层，所述像素隔离层将每个像素区与其它像素区隔离开，所述开口由像素隔离层侧壁围拢而成，每一开口对应一个像素区；
    其中，所述像素电极、及有机发光层位于所述开口内，且所述有机发光层覆盖所述像素隔离层侧壁，所述公共电极覆盖所述有机发光层及像素隔离层的上表面；
    所述像素隔离层的材料为无机材料，所述像素隔离层侧壁包括自上而下设置的直线部、及连接所述直线部的曲线部；所述直线部垂直于所述基板，所述直线部的高度小于所述曲线部的高度，至少所述曲线部的部分位置处的切面与基板之间的夹角小于85°。
  2. 如权利要求1所述的OLED显示器件，其中，所述曲线部相对于所述像素隔离层向内凹入。
  3. 如权利要求1所述的OLED显示器件，其中，所述曲线部相对于所述像素隔离层向外凸出。
  4. 如权利要求1所述的OLED显示器件，其中，所述像素隔离层的材料为氮化硅。
  5. 如权利要求4所述的OLED显示器件，其中，所述像素隔离层由氮组分比不同的多个氮化硅层叠加构成。
  6. 如权利要求5所述的OLED显示器件，其中，所述像素隔离层通过等离子体CVD工艺制作，像素隔离层的开口通过蚀刻工艺制作。
  7. 如权利要求1所述的OLED显示器件，其中，所述像素电极为OLED显示器件的阳极，所述公共电极为OLED显示器件的阴极。
  8. 如权利要求7所述的OLED显示器件，其中，所述像素电极的材料为具有高功函数的金属氧化物，所述公共电极的材料为具有高导电率和低功函数的金属。
  9. 如权利要求1所述的OLED显示器件，其中，所述像素电极为OLED显示器件的阴极，所述公共电极为OLED显示器件的阳极。
  10. 如权利要求9所述的OLED显示器件，其中，所述像素电极的材料为具有高导电率和低功函数的金属，所述公共电极的材料为具有高功函数的金属氧化物。
  11. 一种OLED显示器件，包括：
    基板；
    设于所述基板上的多个呈阵列式排布的像素区，每一像素区包括于所述基板上依次层叠设置的像素电极、有机发光层、与公共电极；
    及具有多个开口的像素隔离层，所述像素隔离层将每个像素区与其它像素区隔离开，所述开口由像素隔离层侧壁围拢而成，每一开口对应一个像素区；
    其中，所述像素电极、及有机发光层位于所述开口内，且所述有机发光层覆盖所述像素隔离层侧壁，所述公共电极覆盖所述有机发光层及像素隔离层的上表面；
    所述像素隔离层的材料为无机材料，所述像素隔离层侧壁包括自上而下设置的直线部、及连接所述直线部的曲线部；所述直线部垂直于所述基板，所述直线部的高度小于所述曲线部的高度，至少所述曲线部的部分位置处的切面与基板之间的夹角小于85°；
    其中，所述曲线部相对于所述像素隔离层向内凹入；
    其中，所述像素隔离层的材料为氮化硅；
    其中，所述像素隔离层由氮组分比不同的多个氮化硅层叠加构成。
  12. 如权利要求11所述的OLED显示器件，其中，所述像素隔离层通过等离子体CVD工艺制作，像素隔离层的开口通过蚀刻工艺制作。
  13. 如权利要求11所述的OLED显示器件，其中，所述像素电极为OLED显示器件的阳极，所述公共电极为OLED显示器件的阴极。
  14. 如权利要求13所述的OLED显示器件，其中，所述像素电极的材料为具有高功函数的金属氧化物，所述公共电极的材料为具有高导电率和低功函数的金属。
  15. 如权利要求11所述的OLED显示器件，其中，所述像素电极为OLED显示器件的阴极，所述公共电极为OLED显示器件的阳极。
  16. 如权利要求15所述的OLED显示器件，其中，所述像素电极的材料为具有高导电率和低功函数的金属，所述公共电极的材料为具有高功函数的金属氧化物。
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