WO2015176335A1 - 一种干蚀刻设备及方法 - Google Patents

一种干蚀刻设备及方法 Download PDF

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Publication number
WO2015176335A1
WO2015176335A1 PCT/CN2014/079080 CN2014079080W WO2015176335A1 WO 2015176335 A1 WO2015176335 A1 WO 2015176335A1 CN 2014079080 W CN2014079080 W CN 2014079080W WO 2015176335 A1 WO2015176335 A1 WO 2015176335A1
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WO
WIPO (PCT)
Prior art keywords
etching
dry etching
sleeve
pumping
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2014/079080
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English (en)
French (fr)
Inventor
柴立
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TCL China Star Optoelectronics Technology Co Ltd
Original Assignee
Shenzhen China Star Optoelectronics Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shenzhen China Star Optoelectronics Technology Co Ltd filed Critical Shenzhen China Star Optoelectronics Technology Co Ltd
Priority to US14/406,694 priority Critical patent/US20160260586A1/en
Publication of WO2015176335A1 publication Critical patent/WO2015176335A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32834—Exhausting
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/1303—Apparatus specially adapted to the manufacture of LCDs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Definitions

  • the present invention relates to the field of semiconductor processing, and in particular to a thousand etching apparatus and method. Background technique
  • the etching process is an important processing process in the process of fabricating a thin film transistor liquid crystal display device (TFT LCD) array substrate.
  • TFT LCD thin film transistor liquid crystal display device
  • the etching process is classified into a dry etching process and a wet etching process according to the physical state of the etchant.
  • the dry etching process utilizes the blowing force of the etching gas in the intake system, the suction force of the suction system, and the voltage between the electrode plates in an ideal state in the process of manufacturing the TFT-LCD by the dry etching process.
  • the surface of the substrate to be processed is blown in a direction completely perpendicular to the surface of the substrate to be processed.
  • the gas pressure and the gas flow stability of the etching gas are ensured to ensure that the amount of etching gas that is in contact with each part of the substrate surface to be processed is equal during the entire process, thereby ensuring that the portions of the substrate to be processed are identical.
  • the rate is processed to ensure uniformity of processing of the various parts of the substrate to be processed during processing.
  • the flow direction of the etching gas in actual operation is not completely perpendicular to the surface of the substrate to be processed, and the flow rate of the etching gas flowing through various portions of the surface of the substrate to be processed Not exactly the same.
  • the amount of etching gas blown to the respective portions of the substrate to be processed is not completely the same throughout the etching process.
  • the etching degree of each part of the substrate to be processed is different, and the processing uniformity of each part of the substrate to be processed cannot be well ensured.
  • the present invention provides a dry etching apparatus, including:
  • Etching a cavity comprising a submount to place a workpiece to be etched
  • a sleeve system disposed at a bottom of the etching chamber to control airflow movement inside the etching chamber, wherein the pumping system comprises:
  • An air suction passage having a plurality of air suction ports and an exhaust port, the air suction port extending into the cavity through an opening of the bottom portion of the cavity;
  • a sleeve machine disposed in the suction passage and adjacent to the exhaust port;
  • controllable valve which is correspondingly mounted on each of the sleeve ports, and configured to be turned on/off according to a set parameter; wherein the pumping system has a cyclic working mode and a non-cyclic working mode, wherein in the cyclic working mode
  • the controllable width is sequentially opened/closed for a certain time interval, thereby controlling the flow direction of the I* inscribed gas in the cavity, so that the average contact density of the etching gas flowing through different positions of the workpiece to be etched under a specific process is uniform .
  • controllable valves are all split open for pumping.
  • controllable valve in the cyclic mode of operation, is controlled to gradually change the flow of etch gas within the chamber to maintain airflow within the etch chamber.
  • controllable valve in the cycle mode, is controlled to cause the pumping system to draw a constant amount of pumping per unit time to maintain the internal gas of the etching chamber. ⁇ ⁇ unchanged.
  • the time interval ffi of the controllable pottery/shutdown is determined by the processing time of the particular process.
  • the number and position of the suction ports are determined by at least one of a shape of the electrode of the thousand etching apparatus, a shape of the abutment, and a shape of the surface to be processed of the workpiece to be processed.
  • the suction ports are located at the bottom of the etch chamber and are arranged at equal intervals around the base.
  • controllable switches on adjacent locations are alternately turned on. / off, thereby slowly changing the flow direction of the etching gas in the cavity.
  • controllable valve in the cyclic mode of operation, is controlled such that the amount of increase in pumping volume per unit time of the controllable width of the open process and the unit of controllable width in the shutdown process The amount of pumping reduction is equal in time, so that the total amount of pumping per unit time of the sleeve gas passage is kept constant.
  • controllable widening control in the cyclic mode of operation, is such that the controllable opening degree of the opening process is equal to the degree of closing of the controllable valve during the closing process.
  • the invention also provides a method for thousands etching an workpiece, comprising the steps of:
  • the sleeve mode is selected according to the process to be performed, wherein the sleeve mode includes a cyclic operation mode and a non-circulation operation mode;
  • the opening/closing of the controllable valve is controlled according to the set parameter, thereby controlling the flow direction of the etching gas, so that the different positions of the workpiece to be etched and the flowing etching gas under a specific process
  • the average contact density tends to be consistent
  • the sleeve etching process is performed while performing the sleeve gas in the cyclic operation mode or the non-cyclic operation mode.
  • the sleeve system of the thousands of etching apparatus enters a cyclic mode of operation when the dry etching apparatus performs the main process of etching.
  • the present invention has the following advantages:
  • the uniformity of the dry etching process can be further improved, the manufacturing uniformity of the array substrate can be improved, and the product quality and the yield rate can be improved.
  • the thousands of etching apparatuses designed according to the present invention further reduce the limitation of process uniformity on product design, and provide space for product design.
  • 1 is a structural block diagram of a prior art thousand etching device
  • 2 and 3 are block diagrams showing the structure of a thousand etching apparatus according to an embodiment of the present invention
  • FIG. 4 is a top plan view showing a dry etching apparatus according to an embodiment of the present invention.
  • 5a and 5b are schematic top plan views of a dry etching apparatus according to an embodiment of the present invention.
  • Figure 6 is a schematic view showing the shape of the suction port of the air extraction system according to the present invention.
  • FIG. 7 is a schematic flow chart showing the operation of an air extraction system of a dry etching apparatus according to an embodiment of the present invention.
  • FIG. 8 is a flow chart showing the operation of the pumping system of the thousands of etching apparatuses according to an embodiment of the present invention.
  • FIG. 9 is a schematic flow chart showing the operation of a dry etching apparatus according to an embodiment of the invention.
  • FIG. 10 is a schematic diagram showing the operation of a dry etching apparatus according to an embodiment of the invention. detailed description
  • the manufacturing process usually involves first coating a film on the surface to be processed of the workpiece to be processed, and then using lithography to define a circuit pattern on the film by photoresist, and finally using chemical or physical means to remove the unnecessary portion. Removal, this removal step is called engraving.
  • process uniformity is usually used to describe the degree of engraving of the workpiece as a whole in a certain process. In a particular process, the degree of etching at different locations on the same workpiece processing surface is closer to that of the process.
  • the etching process is generally classified into a wet etching process and a dry etching process.
  • the wet etching process uses a liquid as a medium for etching
  • a thousand etching process uses a gas as a medium for etching. Therefore, for the dry etching process, the amount of etching gas that is to be contacted by the workpiece to be processed in the entire process becomes an important determinant of the etching rate.
  • improving process uniformity of thousands of etching equipment is mainly achieved by adjusting parameters such as pressure and gas flow.
  • the workpieces to be processed are getting larger and larger, and the process uniformity is more and more difficult to improve.
  • the invention is based on the shortcomings of the existing dry etching equipment mechanism design and the reason that the uniformity is difficult to improve. Due to In the existing dry engraving equipment, the sleeve gas system has a single function, so the distribution of the process gas by the sleeve gas system is fixed.
  • the invention optimizes and improves the pumping system of the dry etching device, thereby improving the flow direction of the etching gas during the processing, and achieving the purpose of controlling the amount of the etching gas contacted at different positions on the surface to be processed of the workpiece to be processed in the whole process, thereby improving Process uniformity.
  • etching apparatus of the present invention Process uniformity can be improved using the thousands of etching apparatus of the present invention.
  • the operation of the present invention mainly based on a dry etching apparatus for processing a TFT liquid crystal display panel, and thereafter the etching process is mainly based on processing a glass substrate.
  • the dry etching apparatus of the present invention is not used in this manner, and the dry etching apparatus of the present invention can be employed in the processing and manufacturing steps of the dry etching process.
  • the dry etching apparatus includes: an etching chamber 13 for performing engraving; a chamber door 11 for conveying the substrate 15 disposed on the side of the etching chamber 3; and a bottom portion of the etching chamber 13 for mounting
  • the base 18 on which the substrate 15 is placed; the upper electrode 12 and the lower electrode 6 which control the flow of the etching gas; and the suction system 19 for discharging the etching gas are disposed at the bottom of the etching chamber 13 of the dry etching apparatus.
  • the air intake system of the dry etching apparatus is mounted at the top electrode 12 of the etching chamber 13 for blowing in the etching gas. Since the position of the air intake system coincides with the upper electrode 12, it is not embodied in Fig. 1.
  • etching is performed by the thousand etching apparatus as shown in Fig. 1, a constant pressure difference between the upper electrode 12 and the lower electrode 6 is stipulated, and then an etching gas is blown into the etching chamber 13 through the intake system.
  • the etching gas is blown toward the surface to be processed of the substrate to be processed 15 in the top-to-bottom direction in the blowing force of the intake system, the suction force of the sleeve system 19, and the voltage between the upper electrode 12 and the lower electrode 16.
  • the actual flow of the engraved gas is indicated by the arrow line at the mark 14, and the etching gas is blown onto the surface to be processed, and the center of the processing surface flows toward the edge, and then is drawn downward by the sleeve system 19 along the edge of the substrate.
  • the gas diffuses around the substrate as the etching gas flows onto the glass substrate. Due to the suction suction around the substrate, the gas in the transition region between the middle and the edge of the substrate is always in a lateral flow state, resulting in low etching efficiency.
  • the flow of etching gas flowing through the substrate center region 20, the substrate peripheral regions 21 and 22, and the substrate edge regions 23 and 24 is different, and thus The flow rates of the engraving gases that flow through different locations of the substrate are different, resulting in different contact densities of the etching gases that are in contact with the substrate at different locations within the cell.
  • the rough description is that the contact density of the etching gas that the substrate central region 20 and the edge regions 23, 24 contact is smaller than the contact density of the etching gas that the substrate peripheral regions 21, 22 are in contact with.
  • the material which is relatively sensitive to the etching gas is etched, and the etching rate of the substrate central region 20 and the edge regions 23, 24 is smaller than the etching rate of the substrate peripheral regions 21, 22. Since the air extraction system of FIG. 1 includes only one sleeve air machine 17 and the sleeve air mode is unchanged, the etching is performed under the condition that the air intake mode of the air intake system is constant and the pressure difference between the upper electrode 12 and the lower electrode 16 is constant.
  • the flow direction of the etching gas inside the cavity 13 is also constant. Based on the above, the central region 20 and the edge regions 23, 24 of the substrate are less etched than the peripheral regions 21, 22 after a certain etching process. Thereby, the uniformity of the substrate is reduced, thereby affecting the quality of the substrate after the processing. Even in this case, the processing failure of the substrate is severely caused, and the yield of the etching process is lowered.
  • the present invention improves the dry etching apparatus, particularly the extraction system for the dry etching apparatus.
  • a dry etching apparatus for an air extraction system according to an embodiment of the present invention is shown in Figs. 2 and 3.
  • the structure of the dry etching apparatus shown in Figs. 2 and 3 is exactly the same as that shown in Fig. 1, and will not be described again here.
  • the pumping system 30 is placed at the bottom of the engraving chamber 13 of the dry etching apparatus. It includes an air suction passage 36, a controllable width 31 and 32, and a sleeve air machine 37.
  • the air suction passage 36 has suction ports 33 and 34 and an exhaust port 35.
  • the suction ports 33 and 34 extend into the cavity 13 through the opening at the bottom of the cavity 13, and are respectively disposed on both sides of the base 18 with the base 8 as the center. While the pumping system is running, the gas enters the sleeve air passage 36 through the suction ports 33, 34 under the suction of the sleeve machine 37, and is then discharged through the exhaust port 35.
  • the controllable valves 31 and 32 of the sleeve system 30 are configured to be turned on/off according to set parameters.
  • the controllable valves 31 and 32 can control the degree of opening/closing thereof, thereby controlling the amount of sleeve air between the suction ports 33 and 34.
  • the sleeve gas system 30 has a cyclic operation mode and a non-cyclic operation mode. In the non-cyclic working mode, the controllable jaws 31 and 32 simultaneously open the sleeve gas; in the cyclic working mode, the controllable valves 31 and 32 are sequentially turned on/off for a certain time interval, thereby controlling the flow direction of the etching gas in the cavity 13.
  • the average contact density of the etching gas flowing at different positions of the workpiece to be etched under a specific process is uniform.
  • the average contact density of the etching gas flowing through different positions of the workpiece to be etched cannot be exactly the same under actual conditions.
  • the agreement we are talking about here can only be a state that is approximately the same. Similarly, in the descriptions following this specification, the agreement does not mean exactly the same, but an approximately identical state.
  • the sleeve system 30 in the cyclic mode of operation can be subdivided into two operating states.
  • the first working state is shown in Figure 2.
  • the controllable 31 is slammed and the controllable valve 32 is closed.
  • the etched gas enters the sleeve air passage 36 from the suction port 33, and the amount of sleeve gas per unit time at the sleeve port 34 is zero.
  • the etching gas flows under the action of the upper electrode 12, the lower electrode 6, the intake system, and the exhaust system 30, as indicated by the arrow line of the mark 38.
  • the second operating state of the sleeve system 30 is as shown in FIG.
  • the controllable 32 Open the controllable valve 31 is closed.
  • the gas plenum suction port 34 is etched into the sleeve air passage 36, and the amount of suction in the unit unit at the sleeve port 33 is, in this case, the etching gas is in the upper electrode 12, the lower electrode 16, the intake system, and the pumping system 30. Its action is shown by the arrow line as indicated by the sign 39.
  • the flow direction and flow rate of the etching gas are different for different positions of the substrate 15. Therefore, in an operating state, the contact density of the I*-etched gas contacted at different positions of the substrate 15 per unit time is also different. The total amount of etching gas that is in contact with the substrate 15 at different positions throughout the operating state is also different.
  • the flow of the etching gas in the first working state and the second working state, in the horizontal direction, the flow of the etching gas is reversed, and the etching gas flowing in the opposite direction is in the pumping system 30.
  • the total gas volume in the two working states is approximately complementary.
  • the total amount of etching gas contacted on the substrate 15 is smaller than that of other regions, and the total amount of etching gas contacted in the second operating state is larger than that of the other regions.
  • the total amount of etching gas contacted at different positions of the substrate 15 is uniform, which improves the uniformity of the substrate process.
  • the two operating states are sequentially counted as one pumping cycle, and the complete execution of the sleeve gas cycle during the etching process makes the total amount of the etching gas contacted at different positions of the substrate 15 tend to be uniform throughout the etching process. This ensures the substrate during the entire etching process! 5 The etching degree is consistent at different positions, so as to ensure the processing quality and yield of the engraving process to the utmost extent.
  • the air pressure in the etching chamber of the thousand etching device is to maintain a constant value, it is required to set the pumping system according to the pressure value in the chamber and the total amount of intake air of the intake system before the operation of the sleeve system.
  • the total amount of sleeves if the total amount of intake air per unit time of the intake system is constant, the total amount of pumping per unit time of the pumping system cannot be changed. That is, the controllable broadening control of the dry etching apparatus in the unit is such that the pumping system draws air with a constant total amount of pumping, thereby keeping the internal pressure of the etching chamber constant.
  • the sleeve gas system slowly reduces the amount of sleeve gas per unit time of a suction port until the working state is switched.
  • the pumping system always conforms to the principle that the opening amount of the channels in the two switching processes is equal to the amount of opening ⁇ of one channel, and the pressure in the etching chamber is not unstable due to insufficient or excessive pumping.
  • the venting system 30 is ii-only considering that the etching gas is complementary to the flow 1 on a pair of opposing sides 1 on the horizontal plane of the substrate. Therefore, the sleeve system 30 only contains two suction ports. Of course, in actual operation, it is necessary to consider the flow direction of the engraved gas in multiple directions on the horizontal plane of the substrate according to actual conditions.
  • the electrode of the dry etching apparatus, the surface to be processed of the substrate, and the shape of the base are quadrilateral.
  • the shape of the base electrode of the pumping system takes into account the flow direction of the etching gas in the front, rear, left and right directions on the plane of the substrate.
  • the extraction system comprises four sleeve ports.
  • Figure 4 is a top plan view of the substrate of the dry etching apparatus. As shown in Fig. 4, the sleeve ports 41, 42, 43, 44 are equally spaced around the substrate 45, and each of the suction ports corresponds to one side of the substrate 45.
  • the suction port of the pumping system of the thousand etching apparatus of the present invention is designed to control the flow direction of the etching gas in the etching chamber. Therefore, the design of the sleeve port of the air suction system of the dry etching apparatus of the present invention is not limited to the case described in the above embodiment. On the basis of ensuring that the total amount of etching gas blown to different positions of the substrate processing area in one pumping cycle is the same, the number of sleeves and the position design of the sleeve port are also different depending on the change of the sleeve gas volume per unit time of the sleeve port. form.
  • the suction port design can be four sleeve ports as shown in FIG. 5a; in the case of ensuring that the total sleeve air volume is constant within the unit B inch, the suction port design in this embodiment is also It can be 5 suction ports as shown in Figure 5b.
  • the thousand etching apparatus of the present invention may also include a movable suction port. That is, the position of the sleeve port is movable during system operation.
  • the pumping system can control the flow of the etching gas in the engraving chamber by controlling the movement of the suction port.
  • at least one movable pumping may be employed. The way to match the port and the fixed sleeve. Although the flow direction control of the etching gas is more complicated, the control result is more accurate. Since the most basic design of the suction port is not changed, no matter how complicated it is, it will not be repeated here.
  • the time interval of the controllable wide opening/closing and the order of opening/closing the valve are determined according to the length of the etching process.
  • the working state of the pumping system is defined based on the different control states of the pumping system, that is, the action of opening/closing each controllable valve is a working state transition.
  • the definition is that all the working states are sequentially performed as one sleeve gas cycle, and when the pumping system performs one pumping cycle, the etching gas flow inside the etching chamber of the dry etching device just completes a change period and flows in one pumping cycle.
  • the average contact density of the etching gas at different positions of the workpiece to be etched is uniform.
  • the etching process time is an integral multiple of the pumping cycle time when the time interval between the opening/closing of the controllable valve is established. That is, n pumping cycles are run in a complete cycle throughout the etching process, where n is an integer greater than or equal to one.
  • the pumping cycle duration of the system is set to t, that is, during the etching process, the sleeve gas system cyclically executes the sleeve gas cycle N times.
  • the pumping amount per unit time of the pumping system is set.
  • the pumping system of the thousand etching apparatus in this embodiment has four operating states in the cyclic operating mode. Because in any working state, the sleeve system has only one suction port open.
  • the pumping amount per unit time when the pumping port is fully opened is the total pumping amount per unit time in the embodiment shown in FIG. 4, FIG. 5a, FIG. 5b.
  • the suction port of the pumping system is designed as a square. It is not difficult to understand that the design of the suction port can be of any shape as long as it does not affect the normal pumping operation. As shown in Fig. 6, the shape of the suction port may be square, circular, pentagonal, octagonal or any other shape.
  • the pumping system shown in Fig. 4 performs the switching of all the operating states in a predetermined order, that is, one pumping cycle, that is, the duration of each working state is t/4.
  • a predetermined order that is, one pumping cycle, that is, the duration of each working state is t/4.
  • the sleeve port 4 is opened, and the other air suction ports are closed; in the second working state, the sleeve air port 42 is opened, and the other air suction ports are closed; in the third working state, the sleeve air port is closed. 43 ⁇ , the other suction ports are closed; in the fourth working state, the suction port 44 is opened, and the other suction ports are closed.
  • Four pumping states are performed in the order from the first to the fourth to complete one pumping cycle.
  • the beginning of the sleeve cycle is not limited to having to start with the first working state.
  • the switching working state it is possible to Any working state starts the initial working cycle, but in order to ensure the stability of the airflow in the etching chamber, the switching working state must be opened by the adjacent suction port ti , that is, clockwise as shown in the sleeve port arrangement shown in FIG. Open the next adjacent suction port counterclockwise.
  • the pumping port in order to ensure the stability of the airflow in the etching chamber and the constant air pressure, the pumping port should be slowly closed/opened when switching the working state, and the total pumping volume of the two pumping ports in the switching state should be It is always equal to the total amount of pumping that is fully open at the pumping port.
  • the air suction port 41 in the first working state, the air suction port 41 is fully opened; assuming that the next working state is the second working state, the air suction port 41 is slowly closed when the state is switched, the air suction port 42 is slowly smashed; and the air suction port is 41 unit time.
  • the amount of sleeve gas in the unit of the sleeve port 42 is just increased to 3/4 of the maximum value, that is, the pumping amount between the pumping port 41 and the pumping port 42 unit B inch.
  • the sum is always the amount of sleeve gas per unit time when the suction port 41 or the suction port 42 is fully opened.
  • the principle that the pumping system always conforms to the opening of two channels in the conversion process is equal to the principle of one channel opening amount, so as to avoid unstable pressure in the etching chamber due to insufficient or excessive pumping.
  • the sleeve port of the air suction system is first set in accordance with the structure of the dry I* engraving device I*.
  • the sleeve port of the air suction system is first set in accordance with the structure of the dry I* engraving device I*.
  • the shape of the electrode and the shape of the substrate are quadrangular, four suction ports are provided to correspond to the four sides of the substrate, and the positions of the sleeve ports are arranged at equal intervals around the substrate at the bottom of the etching chamber as shown in FIG.
  • an air suction port is installed inside the dry etching apparatus in accordance with the above-described air suction port design.
  • first step S830 is performed, and the operating parameters of the pumping system are set according to the processing parameters of the dry etching process, and the operating parameters thereof are controlled to be wide open in the cyclic working mode or the non-cyclic working mode. The time interval of closing and the order in which control can be turned on/off.
  • step S840 enters a cyclic mode of operation or a non-cyclic mode of operation.
  • step S850 the system is stopped.
  • FIG. 9 is a diagram illustrating the operation of the pumping system and the dry etching apparatus by the operation flow of the dry etching apparatus as a whole.
  • the substrate to be processed is placed in a thousand etching apparatus.
  • the parameters of the substrate to be processed by the dry etching apparatus are identified, thereby determining the processing parameters of the etching process.
  • the processing parameters of the etching process are communicated to the sleeve system, and the sleeve system determines its own operating parameters according to the processing parameters of the etching process. That is, the sleeve system determines in which process the cycle mode or the acyclic mode is entered. And the sleeve system sets the time interval of opening/closing of the controllable valve in the cyclic operation mode or the non-circulation operation mode and the order of opening/closing according to the processing parameter.
  • step S940 the dry I* device performs an etching process.
  • the pumping system performs sleeve ventilation according to the pre-operating parameter setting.
  • step S950 the dry etching apparatus completes the etching process, and the process ends. The pumping system is then shut down.
  • the process in which the process enters the cyclic operation mode or the acyclic operation mode is judged by the sleeve gas system itself.
  • this judgment step can also be handed over to the thousands of etching devices or manually.
  • the operating parameters of the control system of the sleeve system in the cyclic operation mode or the non-cyclic operation mode such as the opening/closing interval and the opening/closing sequence, can also be assigned to the dry etching device or the manual. carry out.
  • step S1010 the dry etching apparatus performs a preliminary preparation operation of the engraving process, at which time the sleeve gas system enters the acyclic operation mode.
  • the pumping system opens all of the pumping ports for pumping in the acyclic operating mode.
  • the dry etching apparatus then proceeds to step S1020 to perform an etching process.
  • This pumping system also enters the cyclic mode of operation and operates according to predetermined operating parameters.
  • the dry etching apparatus then proceeds to step S1030 to perform a post-processing operation, and then proceeds to step S1040 to deliver the processed substrate.
  • the air suction system enters the acyclic operation mode.
  • step S1010 and step S1030 shown in Fig. 10 the air suction system opens all the air suction ports for sleeve air.
  • the etching uniformity is affected by the S1020 etching processing step, and the others are auxiliary steps. Therefore, the thousand etching apparatus does not need to control the flow of the etching gas inside thereof in steps S10I0 and S1030. Further, if the "pumping system" also performs the sleeve gas cycle operation, the pumping system is complicated to be distributed. In other embodiments of the present invention, the thousands of etching devices are prepared or etched in the etching process.

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  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
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Abstract

一种干蚀刻设备，其包括：蚀刻腔体以及设在所述蚀刻腔体底部的抽气系统。其中，抽气系统包括：具有若干抽气口和排气口的抽气通道、抽气机、对应安装在各个抽气口上的可控阀。本发明还公开了一种干蚀刻方法，其包括以下步骤：将待蚀刻工件放入蚀刻腔体内的基台上；根据所要进行的工序选择抽气方式，其中所述抽气方式包括循环工作模式和非循环工作模式；在按照所述循环工作模式或非循环工作模式进行抽气的同时进行干蚀刻加工工序。该干蚀刻设备可以进一步改善干蚀刻制程均一性，提升阵列基板的制造均一性，从而提升产品品质及良品率，减小制程均一性对产品设计的限制，提升产品设计空间。

Description

一种千蚀刻设备及方法 相关申请的交叉引用
本申请要求享有 2014年 5月 23日提交的名称为"一种千蚀刻设备及方法"的中国专 利申请 CN201410221953.0的优先权， 该申请的全部内容通过引用并入本文中。 技术领域
本发明涉及半导体加工领域， 具体说涉及一种千蚀刻设备及方法。 背景技术
随着信息社会的发展，人们对显示设备的需求得到了增长， 因而也推动了液晶面板行 业的 ft速发展，使得靣板的产量不断提^。蚀刻工艺是制造薄膜晶体管液晶显示装置 (Thin Firm Transistor Liquid Crystal Display, 简称为 TFT LCD)阵列基板过程中的一个重要加工 工艺。蚀刻工艺根据蚀刻剂的物理状态分为干蚀刻工艺和湿蚀刻工艺。干蚀刻工艺为利用 在利用干蚀刻工艺进行 TFT- LCD加工制造的过程中， 理想状态下蚀刻气体在进气系 统的吹力、抽气系统的吸力、 电极板之间的电压等因素的作用下以完全垂直于待加工基板 面的方向吹向待加工基板面。在整个加工过程中， 通 ϋ保证蚀刻气体的气压、气流的稳定 从而保证整个加工过程中待加工基板面每个部分接触到的蚀刻气体的量是相等的，进而保 证待加工基板各部分以相同的速率被处理，保证待加工基板各部分在加工过程中的加工均 一性。但是由于蚀刻腔体内部结构设计以及排气系统设计等因素，导致在实际操作中蚀刻 气体的流向并不是完全垂直亍待加工基板面，并且流经待加工基板面的各个部分的饨刻气 体流速不完全相同。其结果就是，在整个蚀刻加工过程中吹向待加工基板各个部分的蚀刻 气体的量并不完全相同。从而导致待加工基板各个部分的蚀刻程度不同，不能很好地保证 待加工基板的各部分的加工均一性。
随着社会的发展进步，人们对显示设备的需求不断增长，人们对液晶靣板的品质也有 了更高要求。为了追求更高的液晶面板品质以及液晶面板生产的良品率，对液晶面板加工 过程中待加工基板的各部分的加工均一性就有了更高的要求。同时对于使用干蚀刻工艺用 于加工其他基板的千蚀刻设备而言， 对其制程均一性的要求也在不断提高。 因此，为了更好的保证加工过程中待加工基板的不同位置的制程均一性，需要一种新 的^于干蚀刻加工工艺的装置及方法。 发明内容
针对现有技术中干蚀刻加工制程均一性不够高的问题， 本发明提供了一种干蚀刻设 备， 包括：
蚀刻腔体， 其包括基台以放置待蚀刻工件；
设在所述蚀刻腔体底部的袖气系统， 以控制所述蚀刻腔体内部的气流运动， 其中， 所 述抽气系统包括：
抽气通道，其具有若干抽气口和排气口，所述抽气口通过所述腔体底部的开口伸入到 所述腔体中；
袖气机， 其设置在所述抽气通道内并靠近所述排气口；
可控阀， 其对应安装在各个袖气口上， 且被配置成根据设定参数打开 /关闭； 其中， 所述抽气系统具有循环工作模式和非循环工作模式， 其中， 在所述循环工作模 式下， 所述可控阔依次打开 /关闭一定时间间隔， 从而控制所述腔体内 I*刻气体的流向， 使得在特定工序下流过所述待蚀刻工件的不同位置的蚀刻气体的平均接触密度一致。
在一个实施例中， 在所述非循环工作模式下， 所述可控阀全部衧开进行抽气。
在一个实施例中，在所述循环工作模式下，所述可控阀经控制逐渐改变所述腔体内蚀 刻气体的流向， 从而保持所述蚀刻腔体内部气流稳定。
在一个实施例中，在所述循环工 模式下，所述可控阀经控制使所述抽气系统在单位 时间内以恒定的抽气总量抽气， 从而保持所述蚀刻腔体内部气 ίΐ不变。
在一个实施例中， 在所述循环工作模式不， 所述可控陶打幵 /关闭的时间间隔 ffi所述 特定工序的加工时间决定。
在一个实施例中， 所述抽气口的数量及位置由千蚀刻设备电极形状、基台形状、待加 工工件的待加工面形状中的至少一个决定。
在一个实施例中，所述抽气口位亍所述蚀刻腔体底部，且以相等间距排布在所述基台 的周围。
在一个实施例中，在所述循环工作模式下，相邻位置上的所述可控闺经控制交替打开 /关闭， 从而缓慢改变所述腔体内蚀刻气体的流向。
在一个实施例中，在所述循环工作模式下，所述可控阀经控制使得处于打开 ϋ程的可 控阔处的单位时间内抽气量增加量与处于关闭过程的可控阔处的单位时间内抽气量减小 量相等， 从而保持所述袖气通道单位时间内抽气总量不变。
在一个实施例中，在所述循环工作模式下，所述可控阔经控制使得处于打开过程的可 控阔的打开程度与处于关闭过程的可控阀的关闭程度相等。
本发明还提供了一种对工件进行千蚀刻的方法， 包括以下步骤：
将待蚀刻工件放入蚀刻腔体内的基台上；
根据所要进行的工序选择袖气方式，其中所述袖气方式包括循环工作模式和非循环工 作模式；
如果为循环工作模式， 则根据设定参数控制可控阀的 Γ开 /关闭， 从而控制所述蚀刻 气体的流向，使得在特定工序下所述待蚀刻工件的不同位置与流过的蚀刻气体的平均接触 密度趋于一致；
在所述循环工作模式或非循环工作模式下进行袖气的同时进行千蚀刻加工工序。 在一个实施例中，千蚀刻设备的袖气系统在干蚀刻设备进行蚀刻加工主工序时进入循 环工作模式。
与现有技术相比， 本发明具有如下优点：
根据本发明设计的千蚀刻设备，可以进一步改善干蚀亥制程均一性，提升阵列基板的 制造均一性， 认而提升产品品质及良品率。
根据本发明设计的千蚀刻设备进一歩减小了制程均一性对产品设计的限制，提 了产 品设 i†空间。
本发明的其它特征和优点将在随后的说明书中阐述，并且，部分地从说明书中变得显 而易见， 或者通过实施本发明而了解。本发明的目的和其他优点可通过在说明书、权利要 求书以及附图中所特别指出的歩骤来实现和获得。 附图说明
附图用来提供对本发明的进一歩理解，并且构成说明书的一部分，与本发明的实施例 共同用于解释本发明， 并不构成对本发明的限制。 在附图中；
图 1是现有技术中千蚀刻设备的结构框图； 图 2和图 3是采用本发明一实施例的千蚀刻设备的结构框图；
图 4是采用本发明一实施例的干蚀刻设备的俯视结构示意图；
图 5a和图 5b是分别采用本发明实施例的干饨刻设备的俯视结构示意图;
图 6是根据本发明的抽气系统抽气口形状示意图；
图 7是根据本发明一实施 ί到的干蚀刻设备的抽气系统运作流程示意图；
图 8是根据本发明一实施例的千蚀刻设备的抽气系统运作流程图；
图 9是根据本发明一实施例的干蚀刻设备运作流程示意图；
图 10是根据本发明一实施例的干蚀刻设备运作流程示意图。 具体实施方式
以下将结合附图及实施例来详细说明本发明的实施方式,借此使本领域的技术人员对 本发明如何应用技术手段来解决技术问题，并达成技术效果的实现过程能充分理解并据以 实施。需要说明的是， 只要不构成冲突， 本发明中的各个实施例以及各实施例中的各个特 征可以相互结合， 所形成的技术方案均在本发明的保护范围之内。
在电子设备的集成电路制造过程中，常需要在工件表面将整个电路图案定义出来。其 制造程序通常是先在待加工工件的待加工面上盖上一层薄膜,再利用微影技术在这层薄膜 上以光阻定义出电路图案，最后利用化学或物理方式将不需要的部分去除，此种去除步骤 便称为饨刻。在蚀刻工艺中，通常使用制程均一性来描述在某一制程下工件整体的饨刻程 度。 在一特定制程中， 同一工件加工面上不同位置的蚀刻程度越接近其制程均一性越高。 为保证工件各部分能够同时完成蚀刻加工，保证工件加工良品率以及工件品质，需要对工 件各部分的饨刻程度进行控制，尽量保证待加工工件各部分以相同的速率被蚀刻。即在饨 刻制程中保证较高的制程均一性。
在现有技术中， 蚀刻工艺通常分为湿蚀刻工艺和干蚀刻工艺。顾名思义， 湿蚀刻工艺 采用液体作媒介进行蚀刻， 千蚀刻工艺采用气体作媒介进行蚀刻。 因此对亍干蚀刻工艺， 在整个制程中待加工工件待加工面接触到的蚀刻气体的量就成了决定蚀刻速率的一个重 要决定因素。 一般情况下， 改善千蚀刻设备制程均一性主要是通过调整压力、气体流量等 参数实现。但是随着对制程均一性要求的不断提高，仅仅通过上述几个参数调整已很难进 一步提升制程均一性，尤其是目前待加工工件越来越大,制程均一性改善难度也越来越大。
本发明依据现有干蚀刻设备机构设计的不足以及均一性很难提升的原因而提出。由于 现有干饨刻设备中袖气系统功能单一， 因此制程气体受袖气系统影响的分布性固定。本发 明针对干蚀刻设备的抽气系统进行优化改进，从而改善加工过程中蚀刻气体的流向，达到 控制整个制程中待加工工件待加工面上不同位置接触到的蚀刻气体的量的目的，从而提高 制程均一性。
使用本发明的千蚀刻设备可以改善制程均一性。 在这里我们主要基于加工 TFT液晶 显示面板的干蚀刻设备来描述本发明的运作方式，之后所述的蚀刻制程主要以加工处理玻 璃基板为主。但是需要指出的是， 本发明的干蚀刻设备应用不 K于此， 径何采用干饨刻加 工工艺的加工制造环节都可以采用本发明所述的干蚀刻设备。
图 1为现有的一种千蚀刻设备的示意图。如图 1所示， 干蚀刻设备包括： 用于进行饨 刻的蚀刻腔体 13 ; 设置在蚀刻腔体 3侧面的用于传送基板 15的腔门 11 ；架设在蚀刻腔 体 13底部的用于放置基板 15的基台 18 ； ^于控制蚀刻气体流向的上电极 12以及下电 极 6; 架设在干蚀刻设备的蚀刻腔体 13底部， 用于排出蚀刻气体的抽气系统 19。干蚀刻 设备的进气系统架设在蚀刻腔体 13顶部电极 12处，用于吹进蚀刻气体， 由于进气系统的 位置和上电极 12重合， 其在图 1中没有具体体现。
通过如图 1所示的千蚀刻设备进行蚀刻时，先令上电极 12和下电极 6之间存在恒定 的压差，然后通过进气系统将蚀刻气体吹入蚀刻腔体 13中。蚀刻气体在进气系统的吹力、 袖气系统 19的吸力以及上电极 12和下电极 16之间的电压的作^下以从上到下的方向吹 向待加工基板 15的待加工面。饨刻气体的实际流向如标识 14处箭头线所示， 吹到待加工 面上蚀刻气体认待加工面中心向边缘流动， 然后沿着基板边缘向下被袖气系统 19抽出。
由于抽气系统 19只有一个大的袖气通道， 因此蚀刻气流作用到玻璃基板上时气体向 基板四周扩散。由亍基板四周抽气吸力牵祉， 因此导致基板中间与边缘的过渡区域气体一 直处于横向流动状态， 从而导致蚀刻效率较低。 由图 1中标识 4处的蚀刻气体流向线的 形状可以看出， 流经基板中心区域 20、 基板外围区域 21和 22、 以及基板边缘区域 23和 24 的蚀刻气体流向是不同的， 并由此导致流经基板不同位置的饨刻气体的流速不同， 从 而导致单位^间内， 基板不同位置接触到的蚀刻气体的接触密度不同。 粗略的描述就是， 基板中心区域 20以及边缘区域 23、24接触到的蚀刻气体的接触密度要小于基板外围区域 21、 22 接触到的蚀刻气体的接触密度。 因此导致了在对蚀刻气体比较敏感的材料进行饨 刻 '， 基板中心区域 20以及边缘区域 23、 24的蚀刻率要小亍基板外围区域 21、 22的饨 刻率。 由于图 1中抽气系统只包含一个袖气机 17且袖气方式不变， 因此在进气系统进气方 式不变且上电极 12与下电极 16之间压差不变的情况下， 蚀刻腔体 13内部的蚀刻气体的 流向也是不变的。 基于上述情况， 在经过一定蚀刻加工 ^间后， 基板的中心区域 20以及 边缘区域 23、 24的蚀刻程度小于外围区域 21、 22。 从而降低了基板的均一性， 进而影响 了加工完成后的基板的品质。甚至在这种情况严重 会造成基板的加工失败， 降低了蚀刻 加工的成品率。
为了提高基板的蚀刻制程均一性，本发明改进了干蚀刻设备，尤其是针对干蚀刻设备 的抽气系统做出了改进。使 ^本发明一实施例的抽气系统的干蚀刻设备如图 2和图 3所示。 在不包含袖气系统的情况下， 图 2和图 3所示的干蚀刻设备结构和图 1所示的完全相同， 在这里就不再赘述。抽气系统 30架设在干蚀刻设备的饨刻腔体 13底部。其包括抽气通道 36、 可控阔 31和 32、 袖气机 37。 其中抽气通道 36具有抽气口 33和 34、 排气口 35。 抽 气口 33和 34通过腔体 13底部的开口伸入到腔体 13中， 且以基台 8为中心分别安置在 基台 18的两侧。 在抽气系统运行时， 气体在袖气机 37吸力的 用下通过抽气口 33、 34 进入袖气通道 36, 然后通过排气口 35被排出。
袖气系统 30的可控阀 31和 32被配置成可以根据设定参数打开 /关闭。 可控阀 31和 32可以控制其打开 /关闭的程度， 从而控制抽气口 33和 34单位 ^"间内的袖气量。 在本实 施例中， 袖气系统 30具有循环工作模式和非循环工作模式。 其中， 在非循环工作模式下 可控闺 31和 32同时打开袖气； 在循环工作模式下， 可控阀 31和 32依次打开 /关闭一定 时间间隔， 从而控制腔体 13内蚀刻气体的流向， 使得在特定工序下流 ϋ待蚀刻工件的不 同位置的蚀刻气体的平均接触密度一致。当然的，在实际情况下流过待蚀刻工件的不同位 置的蚀刻气体的平均接触密度无法做到完全相同。因此这里我们所说的一致只能是一个近 似相同的状态。 同样的， 在本说明书之后的描述中， 所说的一致也并不是指的完全相同， 而是一种近似相同的状态。
同时， 根据抽气系统 30的可控阀 3 和 32的不同状态， 循环工作模式下的袖气系统 30还可细分为两个工作状态。 第一工作状态如图 2所示。 在第一工作状态中， 可控 31 打幵， 可控阀 32关闭。 丛而蚀刻气体从抽气口 33进入袖气通道 36， 袖气口 34处的单位 时间内的袖气量为 0。 在此情况下， 蚀刻气体在上电极 12、 下电极 6、 进气系统以及抽 气系统 30的作用下， 其流向如标识 38的箭头线所示。
同样的， 袖气系统 30的第二工作状态如图 3所示。 在第二工作状态中， 可控闺 32 打开， 可控阀 31关闭。 从而蚀刻气体丛抽气口 34进入袖气通道 36， 袖气口 33处当下单 位 ^间内的抽气量为 在此情况下， 蚀刻气体在上电极 12、 下电极 16、 进气系统以及 抽气系统 30的作用下， 其流向如标识 39的箭头线所示。
单独看抽气系统 30的一个工作状态，对于基板 15的不同位置蚀刻气体的流向和流速 是不相同的。 因此在一个工作状态中， 单位时间内基板 15不同位置接触到的 I*刻气体的 接触密度也不同。在整个工作状态中基板 15不同位置接触到的蚀刻气体的总量也就不同。 但是综合的看袖气系统 30的两个工 状态， 在第一工作状态和第二工作状态中， 在水平 方向上， 蚀刻气体的流向是相反的， 相反方向流动的蚀刻气体在抽气系统 30的两个工作 状态中的总气量近似互补关系。 即在第一工作状态中， 基板 15上接触到的蚀刻气体总量 相对其他区域较小的区域， 在第二工作状态中接触到的蚀刻气体总量相对其他区域较大。 这样总体的看， 在两个工作状态中， 基板 15不同位置接触到的蚀刻气体总量一致， 认而 提高了基板制程均一性。
将依次执行两个工作状态算作一个抽气周期,在蚀刻过程中完整的重复执行袖气周期 即可使得在整个饨刻过程中基板 15不同位置接触到的饨刻气体总量趋于均一。 从而保证 在整个蚀刻过程中， 基板！ 5不同位置的蚀刻程度一致， 从而最大限度的保证饨刻处理的 处理品质以及良品率。
在干蚀刻工艺中， 因为千蚀刻设备蚀刻腔体内的气压要保持一个恒定值，这就要求在 袖气系统运行前需要根据腔内气压值以及进气系统的进气总量设定抽气系统的袖气总量。 并且在整个蚀刻制程中，如果进气系统单位时间内的进气总量不变，抽气系统单位时间内 的抽气总量也不能发生变化。即单位^间内干蚀刻设备的可控阔经控制使所述抽气系统以 恒定的抽气总量抽气，从而保持蚀刻腔体内部气压不变。这就要求本实施例的抽气系统运 行时， 在一个袖气口单位时间内的抽气量减小 /增大的过程中， 另一个抽气口单位时间内 的抽气量等量增大 /减小。 即在保证两个抽气口单位时间内的抽气总量始终保持不变的前 提下进行工作状态的切换， 避免袖气不足或过量导致蚀刻腔体内部气压不稳定。
本发明的抽气系统在正常运行的过程中，需要 控阔经控制缓慢改变腔体内蚀刻气体 的流向，从而保持蚀刻腔体内部气流稳定。即任意袖气口单位时间内的袖气量变化不能过 快， 同时抽气系统吸入蚀刻气体的吸入位置也不能快速改变。因为上述两者的快速变化都 会导致蚀刻气体流向和流速的急剧变化，进而影响蚀刻腔体内的气流的稳定。在本实施例 中，袖气系统在进行工作状态切换时，缓慢的减小一个抽气口单位时间内的袖气量直到其 为零 （抽气口关闭） ， 同时缓慢的打幵另一个袖气口， 逐渐增加其单位时间内的袖气量。 在一个抽气口刚达到关闭状态的 候,保证另一个袖气口刚刚达到系统设定的单位时间内 的抽气量最大值。使抽气系统始终符合两个处亍转换过程中的通道的开启量相加等于一个 通道开 β量的原则， 避免抽气不足或过量导致蚀刻腔体内压力不稳定。
上述实施例只是本发明的一个简单实施例。 在上述实施例中， 抽气系统 30的设 ii-只 考虑蚀刻气体在基板水平面上一对相对方1 上的流 1 互补。 因此袖气系统 30只包含两个 抽气口。 当然， 在实际操作中， 需要根据实际情况考虑饨刻气体在基板水平面上多个方向 上的流向。 因此， 在实际操作中， 需要根据基板待加工面形状、 上下电极形状、 基板基座 形状等因素来设计袖气口的数量、安装位置、 单位 B寸间内袖气量变化等参数， 从而达到对 蚀刻气体流向的更加精确的控制，以使在一个袖气周期中基板不同位置接触到的蚀刻气体 总量一致。
例如， 在本发明另一个实施例中， 干蚀刻设备的电极、基板待加工面以及基座形状为 四边形。在此实施例中，抽气系统基亍电极形状考虑基板平面上前后左右四个方向的蚀刻 气体流向。 因此在如图 4所示的实施例中， 抽气系统包含 4个袖气口。 图 4为干蚀刻设备 基板的俯视图。 如图 4所示， 袖气口 41、 42、 43、 44等间距安装在基板 45四周， 每个抽 气口对应基板 45的一条边。
由于本发明的千蚀刻设备的抽气系统的抽气口的设计目的是控制蚀刻腔体内蚀刻气 体的流向。因此本发明的干蚀刻设备的抽气系统的袖气口的设计并不限于上述实施例中所 描述的情况。在保证一个抽气周期内吹向基板代加工区域不同位置的蚀刻气体的总气量一 致的基础上， 配合袖气口单位时间内袖气量的变化， 袖气口的数量、位置设计也会有多种 不同的形式。例如在如图 5a和图 5b所示的本发明的另一实施例中， 由于干蚀刻设备的电 极、 基板待加工面以及基座形状为圆形。 因此在此实施 ί到中， 抽气口设计既可以为如图 5a所示的 4个袖气口； 在保证单位 B寸间内总袖气量不变的情况下， 此实施例中的抽气口 设计也可以为如图 5b所示的 5个抽气口。 当然也可以设 ^更多的抽气 只要在安装时 保证抽气口等间距安装在基板四周，并在运行中保证单位时间内总抽气量不变，避免抽气 不足或过量导致蚀刻腔体内压力不稳定。
当然的， 本发明的千蚀刻设备也可包含一个可动抽气口。 即在系统运行过程中， 袖气 口的位置是可动的。这样即使只有一个抽气口，抽气系统也可以通过控制抽气口的移动从 而控制饨刻腔体内蚀刻气体的流向。同样本发明的另一实施例中也可采用至少一个可动抽 气口以及固定袖气口配合的方式。这样虽然对蚀刻气体的流向控制更为复杂，但是控制结 果也更加精确。 由于无论多复杂的抽气口设计， 其最基本的设 目的不会变化， 因此在这 里就不多加赘述。
在本发明的千蚀刻设备运行前，还要根据蚀刻制程时间的长短制定袖气系统循环工作 模式下可控阔打开 /关闭的时间间隔以及 控阀打开 /关闭的顺序。 基于可控阔的不同开关 状态定义抽气系统的工作状态， 即每次可控阀进行打开 /关闭的动作即为一次工作状态转 换。 定义依次执行所有的工 状态为一个袖气周期， 则抽气系统执行完一个抽气周期时， 干蚀刻设备蚀刻腔体内部的蚀刻气体流向正好也完成了一个变化周期 在一个抽气周期内 流过待蚀刻工件的不同位置的蚀刻气体的平均接触密度一致。
基于上述定义， 在制定可控阀打开 /关闭的时间间隔的 ^候， 要保证蚀刻制程时间为 抽气周期时间的整数倍。即在整个蚀刻制程时间内 以完整的循环运行 n个抽气周期，其 中 n为大于等于 1的整数。 在本实施例中， 假设蚀刻制程时长为 N*t， 设定系统的抽气周 期时长为 t, 即在蚀刻制程中， 袖气系统循环执行袖气周期 N次。
然后根据进气系统单位^间内的进气量以及千蚀刻设备工作时蚀刻腔体内气压来设 定抽气系统单位时间内的抽气量。在如图 4所示的实施例中， 由于进气系统单位时间内的 进气量以及干蚀刻设备工作 腔内气压为恒定，因此在系统工作 ^必须保证其单位 ^间内 总抽气量始终恒定。本实施例中的千蚀刻设备的抽气系统在循环工作模式下具有四个工作 状态。 因为在任意一个工作状态中， 袖气系统只有一个抽气口开启。所以在本实施例的抽 气系统运行 Βί,—个抽气口完全打开时单位时间内的抽气量就是系统单位时间内的总抽气 在如图 4、 图 5a、 图 5b所示的实施例中， 抽气系统的抽气口设计为正方形。 不难理 解， 只要不影响正常的抽气运行， 抽气口的设计可以为任意形状。 如图 6所示， 抽气口的 形状可以为正方形、 圆形、 五边形、 八边形或是其他任意形状。
图 4所示的抽气系统按照预定顺序完成所有工作状态的切换即为一个抽气周期，即每 个工作状态的持续时间为 t/4。 如图 7所示； 在第一工作状态中， 袖气口 4 打开， 其他抽 气口关闭； 在第二工作状态中， 袖气口 42衧开， 其他抽气口关闭； 在第三工作状态中， 袖气口 43扞幵，其他抽气口关闭；在第四工作状态中，抽气口 44打开，其他抽气口关闭。 按照从第一到第四的顺序执行四个工作状态从而完成一个抽气周期。
当然的，袖气周期的开始并不限于必须是由第一工作状态开始。在本实施例中可以从 任意一个工作状态幵始初始的工作周期，但是为了保证蚀刻腔体内气流稳定，切换工作状 态^打开的必须是相邻的抽气口 ti即按照如图 4中袖气口排列方式所示的顺时针或逆时针 方向不断打开下一相邻的抽气口。同时在袖气口扛开和关闭的过程中，为了保证蚀刻腔体 内气流稳定以及气压恒定， 在切换工作状态时抽气口要缓慢关闭 /打开， 处于切换状态的 两个抽气口的抽气总量要始终等于一个抽气口完全打开 的抽气总量。例如：第一工作状 态中， 抽气口 41完全打开； 假设下一个工作状态为第二工作状态， 那么在状态切换时抽 气口 41缓慢关闭， 抽气口 42缓慢扞幵； 并且抽气口 41单位时间内的袖气量减小到最大 值的 1/4时， 袖气口 42单位 间内的袖气量恰好增大到最大值的 3/4, 即抽气口 41和抽 气口 42单位 B寸间内的抽气量的和始终为抽气口 41或抽气口 42完全打开时单位时间内的 袖气量。使抽气系统始终符合两个处于转换过程中的通道的开 量相加等于一个通道开启 量原则， 避免抽气不足或过量导致蚀刻腔体内压力不稳定。
接下来，通过一系列的流程图来描述本发明的袖气系统的运作方式。附图的流程图中 示出的歩骤可以在包含诸如一组计算机可执行指令的计算机系统中执行。虽然在流程图中 示出了逻辑顺序,但是在某些情况下，可以以不同于此处的顺序执行所示出或描述的步骤。
首先， 独立地看干蚀刻设备的抽气系统。在干蚀刻设备投入运行前， 需要先对其内部 结构进行设计。 如图 8所示， 在最初的步骤 S810中， 首先要根据干 I*刻设备 I*刻腔体的 结构来设 抽气系统的袖气口。例如在电极形状和基板形状为四边形时，设 四个抽气口 来对应基板的四条边，并将袖气口位置如图 4所示的那样等间距环绕基板设 ϋ在蚀刻腔体 底部。 然后在步骤 S820中根据上述抽气口设计在干蚀刻设备内部安装抽气口。
在抽气口安装好后，抽气系统需要配合千蚀刻设备的运行状态来运行。在干蚀刻设备 运行前， 首先要进行步骤 S830, 根据干蚀刻工艺下加工工序参数设定抽气系统的运行参 数， 其运行参数包括在循环工作模式下或非循环工作模式下可控阔打开 /关闭的时间间隔 以及可控阐打开 /关闭的顺序。
当一切设定完成后， 干蚀刻设备进入饨刻制程。 与此同时， 抽气系统进入歩骤 S840, 其进入循环工作模式或非循环工作模式。当干蚀刻设备蚀刻制程结束时，抽气系统也随之 进入步骤 S850, 系统停机。
图 9是通过干蚀刻设备整体的运行流程来描述抽气系统与干蚀刻设备的运 配合。如 图 9所示， 首先在步骤 S910中， 待加工基板被放入千蚀刻设备中。 然后在步骤 S920中 干蚀刻设备对待加工基板的参数进行识别，从而确定蚀刻工艺制程的加工工序参数。紧接 着在步骤 S930中， 蚀刻工艺制程的加工工序参数被传达到袖气系统， 袖气系统根据蚀刻 工艺制程的加工工序参数确定自身的工作参数。即袖气系统确定在何道工序下进入循环工 作模式或非循环工作模式。并且袖气系统根据加工工序参数设定自身的可控阀在循环工作 模式下或非循环工作模式下打开 /关闭的时间间隔以及打开 /关闭的顺序。
接着在歩骤 S940中， 干 I*刻设备进行蚀刻加工操作。 与此同时， 抽气系统按照预^ 工作参数设定进行袖气。 最后在步骤 S950中， 干蚀刻设备完成蚀刻加工， 制程结束。 抽 气系统隨之停机。
在这里需要指出的是，在图 9所示的实施例的流程中，在何道工序进入循环工作模式 或非循环工作模式是由袖气系统自身判断的。当然，此判断歩骤也可交予千蚀刻装置或是 人工完成。 另夕卜同样， 袖气系统的可控阁在循环工作模式下或非循环工作模式下打开 /关 闭的时间间隔以及打开 /关闭的顺序等工作参数设定也可交予干蚀刻装置或是人工完成。
在这里需要指出的是，在图 8和图 9所示的实施例的流程中，袖气系统仅在干饨刻设 备进行饨刻加工制程时工作。在本发明其他实施例中，抽气系统的运行情况根据干饨刻设 备的实际加工需要会有所不同。 如在图 10所示本发明另一实施例的运行流程中， 在步骤 S1010中，干蚀刻设备进行饨刻制程的前期准备操作，此时袖气系统进入非循环工作模式。 在本实施例中，抽气系统在非循环工作模式下打开所有抽气口抽气。然后干蚀刻设备进入 步骤 S1020, 进行蚀刻加工制程。 此^抽气系统也随之进入循环工作模式， 按照预定的运 行参数运作。接着干蚀刻设备进入步骤 S1030,进行后处理操作， 并随后进入步骤 S1040, 将加工完成的基板送出。 在步骤 S1030和步骤 S1040中， 抽气系统进入非循环工作模式„ 在干蚀刻设备送出加工完成的基板后，干蚀刻设备和抽气系统进入步骤 S1050，两者停机， 整个蚀刻加工制成结束。
在图 10所示的步骤 S1010和步骤 S1030中， 抽气系统打开所有抽气口进行袖气。 这 样做的原因在于此实施例中影响蚀刻均一性的是 S1020 蚀刻加工处理步骤， 而其他都是 辅助歩骤。 因此， 千蚀刻设备在步骤 S10I 0和歩骤 S1030不需要对其内部的蚀刻气体流 向做控制。进一步地说， 如果此 ^"抽气系统也执行袖气周期操作的话， 会造成抽气系统^ 间分配复杂化。在本发明其他实施例中，千蚀刻设备在蚀刻制程的前期准备或是蚀刻加工 制程的后处理中仍然需要对蚀刻气体的流向做控制。如电浆预处理工序中，需要利用电浆 将工件表面的光阻加以去除。此工序中， 也需要控制工件加工处理的均一性。 因此在进行 类似上述工序的情况下，需要根据干蚀刻设备蚀刻加工制程的具体需要，具体设定抽气系 统在何道工序 τ进入循环工作模式或非循环工作模式。
虽然本发明所公开的实施方式如上,但所述的内容只是为了便于理解本发明而采用的 实施方式， 并非用以限定本发明。本发明所述方法还可有其他多种实施例， 在不背离本发 明实质的情况下，熟悉本领域的技术人员当可根据本发明作出各种相应的改变和变形，但 这些相应的改变和变形都应属于本发明的权利要求的保护范園。

Claims

权利要求书
1、 一种千蚀刻设备， 其中， 所述设备包括：
蚀刻腔体， 其包括基台以放置待蚀刻工件；
设在所述蚀刻腔体底部的袖气系统， 以控制所述蚀刻腔体内部的气流运动， 其中， 所 述抽气系统包括：
抽气通道，其具有若干袖气口和排气口，所述袖气口通过所述腔体底部的开口伸入到 所述腔体中；
抽气机， 其设置在所述抽气通道内并靠近所述排气口- 可控闺， 其对应安装在各个袖气口上， 且被配置成根据设定参数打开 /关闭； 其中， 所述抽气系统具有循环工作模式和非循环工作模式， 其中， 在所述循环工作模 式下， 所述可控阔依次打开 /关闭一定时间间隔， 从而控制所述腔体内 I*刻气体的流向， 使得在特定工序下流过所述待蚀刻工件的不同位置的蚀刻气体的平均接触密度一致。
2、 如权利要求 1所述的千蚀刻设备， 其中， 在所述非循环工作模式下， 所述可控阀全 部打开进行抽气。
3、 如权利要求 1所述的干蚀刻设备， 其中， 在所述循环工作模式下， 所述可控阔经控 制逐渐改变所述腔体内蚀刻气体的流向， 从而保持所述蚀刻腔体内部气流稳定。
4、 如权利要求 1所述的千蚀刻设备， 其中， 在所述循环工作模式下， 所述可控阔经控 制使所述袖气系统在单位时间内以恒定的抽气总量抽气，从而保持所述蚀刻腔体内部气压 不变。
5、 如权利要求 1所述的干蚀刻设备， 其中， 在所述循环工作模式下， 所述可控阀打开 /关闭的时间间隔由所述特定工序的加工时间决定。
6、如权利要求 1所述的千蚀刻设备， 其中， 所述抽气口的数量及位置由干饨刻设备电 极形状、 基台形状、 待加工工件的待加工面形状中的至少一个决定。
7、 如权利要求 6所述的干蚀刻设备， 其中， 所述抽气口位于所述蚀刻腔体底部， ϋ以 相等间距排布在所述基台的周围。
8、 如权利要求 3所述的干蚀刻设备， 其中， 在所述循环工作模式 , 相邻位置上的所 述可控阀经控制交替 Γ开 /关闭， 从而缓慢改变所述腔体内蚀刻气体的流向。
9、 如权利要求 4所述的干蚀刻设备， 其中， 在所述循环工作模式下， 所述可控阀经控 制使得处于 Γ开过程的 控阀处的单位时间内抽气量增加量与处于关闭过程的 控阀处 的单位时间内袖气量减小量相等， 从而保持所述袖气通道单位时间内袖气总量不变。
10、 如权利要求 9所述的干蚀刻设备， 其中， 在所述循环工作模式下， 所述可控阔经 控制使得处于打幵过程的可控陶的打幵程度与处于关闭过程的可控陶的关闭程度相等。
11、 一种对工件进行干蚀刻的方法， 其中， 包括以下歩骤：
将待蚀刻工件放入蚀刻腔体内的基台上；
根据所要进行的工序选择抽气方式，其中所述抽气方式包括循环工作模式和非循环工 作模式；
如果为循环工作模式， 则根据设定参数控制可控阀的衧开 /关闭， 从而控制所述蚀刻 气体的流向，使得在特定工序下所述待蚀刻工件的不同位置与流过的蚀刻气体的平均接触 密度趋于一致；
在所述循环工作模式或非循环工作模式下进行抽气的同 ^进行干蚀刻加工工序。
12、 如权利要求 11所述的抽气方法， 其中， 干蚀刻设备的袖气系统在干蚀刻设备进行 蚀刻加工主工序时进入循环工作模式。
PCT/CN2014/079080 2014-05-23 2014-06-03 一种干蚀刻设备及方法 Ceased WO2015176335A1 (zh)

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