WO2015172587A1 - 一种灵敏元芯片的极化方法 - Google Patents

一种灵敏元芯片的极化方法 Download PDF

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WO2015172587A1
WO2015172587A1 PCT/CN2015/071794 CN2015071794W WO2015172587A1 WO 2015172587 A1 WO2015172587 A1 WO 2015172587A1 CN 2015071794 W CN2015071794 W CN 2015071794W WO 2015172587 A1 WO2015172587 A1 WO 2015172587A1
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electrode
sensitive element
element chip
polarization
polarization method
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罗豪甦
许晴
赵祥永
李龙
杨林荣
林迪
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上海硅酸盐研究所中试基地
中国科学院上海硅酸盐研究所
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/30—Niobates; Vanadates; Tantalates
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/32—Titanates; Germanates; Molybdates; Tungstates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N15/00—Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using the Nernst-Ettingshausen effect
    • H10N15/10—Thermoelectric devices using thermal change of the dielectric constant, e.g. working above and below the Curie point

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  • the invention relates to the field of microelectronic chips, in particular to a polarization method of sensitive element chips.
  • the sensitive element chip of the traditional pyroelectric infrared sensor usually adopts a full-electrode configuration.
  • Refer to 1 It is a traditional electrode structure in the prior art with a fixed area. If you want to reduce the electrode area to adjust the sensitive element of the sensitive element The electrical parameters are not easy to achieve for other purposes. In addition, especially for extremely thin sensitive components, the dielectric noise of the prepared device is too high, and the specific detection rate of the detector is low.
  • the traditional electrode polarization method uses one side to be polarized first, and when the other side is later polarized, it is easy to cause the first side to be partially depolarized, the pyroelectric coefficient is reduced, and the loss is increased; in addition, high-temperature polarization cannot be performed. To further reduce losses.
  • the purpose of the present invention is to provide a sensitive element chip that intersects the sensitive element chip with a traditional electrode structure, which has a higher pyroelectric coefficient and lower dielectric noise.
  • the invention discloses a polarization method of a sensitive element chip.
  • the sensitive element chip includes one or more pyroelectric relaxation ferroelectric single crystal sensitive elements; the pyroelectric relaxation ferroelectric single crystal sensitive element
  • the upper and lower surfaces are respectively provided with electrodes, the upper electrode provided on the upper surface is a single electrode, the lower electrode provided on the lower surface includes a left electrode and a right electrode separated from each other, and the left electrode and the right electrode are not connected to each other
  • the lower electrode is formed into a divided electrode; the left electrode is connected to the positive terminal of the power source, the right electrode is connected to the negative terminal of the power source, and the upper electrode is grounded.
  • the positive terminal voltage U+ of the power supply is +25V
  • the negative terminal voltage U- of the power supply is -25V
  • the thickness D of the sensitive element is 20 ⁇ m.
  • the polarization method is completed in a vacuum environment.
  • the dielectric noise of the device prepared by the polarized sensitive element is reduced, and the specific detection rate of the detector prepared by the sensitive element chip is improved;
  • FIG. 1 is a schematic diagram of the structure of an electrode on a sensitive element chip in an embodiment of the present invention
  • Figure 2 is a schematic diagram of the wiring of the polarization method in the present invention.
  • Fig. 3a is a schematic diagram of the polarization method of the left electrode of the present invention.
  • Figure 3b is a schematic diagram of the right electrode polarization method of the present invention.
  • the sensitive element chip includes one or more pyroelectric relaxation ferroelectric single crystal sensitive elements, the upper and lower surfaces of which are respectively provided with electrodes.
  • the electrodes provided on the upper and lower surfaces are all full electrodes.
  • the upper electrode provided on the upper surface is a single electrode, and the electrode structure provided on the lower surface is changed from full electrodes to left and right electrodes separated from each other.
  • the electrode, as the name implies, the left electrode and the right electrode are two separate electrodes arranged in two places on the lower surface. The two are separated from each other and are not electrically connected or connected, so that the lower electrode on the lower surface is formed into a divided electrode.
  • the left electrode and the right electrode are simultaneously polarized, specifically: the left electrode is connected to the positive terminal of the power supply, and the right electrode is connected to the negative terminal of the power supply, and the upper The electrode is grounded.
  • the reverse polarization on both sides of the electrode can be constructed to fully polarize, give full play to the advantages of split electrodes, reduce loss and dielectric constant, and can be polarized at high temperature.
  • U power supply voltage
  • D thickness D of the sensitive element
  • the voltages of the positive terminal and the negative terminal of the optional power supply are +25V and -25V, respectively, and the thickness D is 20 ⁇ m, that is, the K value in this embodiment is 1.25 kV/mm.
  • the left electrode and the upper electrode will form a polarization circuit as shown in Figure 3a
  • the right electrode and the upper electrode will form a polarization circuit as shown in Figure 3b.
  • the pyroelectric performance of the sensitive element with the separated electrode will also be improved. Refer to the following table and table 1.
  • the crystallographic orientation is ⁇ 111>, which is the polarization method of the present invention Comparison of polarization performance with traditional polarization method:
  • Polarization mode Pyroelectric coefficient Relative permittivity Dielectric loss Polarization of the invention 14.0 ⁇ 10 -4 C/(m 2 K) 450 0.05%
  • Traditional polarization 8.0 ⁇ 10 -4 C/(m 2 K) 550 0.3%
  • the dielectric loss after polarization in the polarization method of the present invention is significantly lower than that of the traditional polarization method.
  • the above polarization process is performed in a vacuum environment to prevent the influence of the external environment on the polarization effect.

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  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Radiation Pyrometers (AREA)

Abstract

一种灵敏元芯片的极化方法，灵敏元芯片包括一个或多个热释电弛豫铁电单晶敏感元；热释电弛豫铁电单晶敏感元的上下表面分别设有电极，设于上表面的上电极为单电极，设于下表面的下电极包括互相分离的左电极及右电极，左电极和右电极互不连通将下电极成型为一分割电极；左电极与电源正端连接，右电极与电源负端连接，上电极接地。采用以上的极化方法，可充分发挥分布式电极的优势，降低介电损耗和介电常数；并能进行高温极化。

Description

一种灵敏元芯片的极化方法 技术领域
本发明涉及微电子芯片领域，尤其涉及一种灵敏元芯片的极化方法。
背景技术
传统的热释电红外传感器的灵敏元芯片上通常采用全电极的配置，参阅1，为现有技术中传统的电极结构，其面积固定，若想要减小电极面积以调控灵敏元的敏感元件的电学参数用于其他用途则不容易实现。另外，尤其对于极薄的灵敏元件而言，其所制备器件的介电噪声过高，探测器的比探测率较低。同时，传统的电极极化方式采用先极化一侧，后极化另一侧时易导致先极化的一侧部分退极化，热释电系数降低，损耗增大；另外无法进行高温极化来进一步降低损耗。
因此，需要一种新型的灵敏元极化方法，使得灵敏元极化完全，充分发挥分布式电极的优势，降低损耗和介电常数；并能进行高温极化。
发明内容
为了克服上述技术缺陷，本实用新型的目的在于提供一种灵敏元芯片，相交具有传统电极结构的灵敏元芯片，热释电系数更高，介电噪声更小。
本发明公开了一种灵敏元芯片的极化方法，所述灵敏元芯片，包括一个或多个热释电弛豫铁电单晶敏感元；所述热释电弛豫铁电单晶敏感元的上下表面分别设有电极，设于所述上表面的上电极为单电极，设于所述下表面的下电极包括互相分离的左电极及右电极，所述左电极和右电极互不连通将所述下电极成型为一分割电极；所述左电极与电源正端连接，所述右电极与电源负端连接，所述上电极接地。
优选地，所述敏感元的厚度D与所述电源电压U的关系为：U＝KD，其中K＝1-2kV/mm。
优选地，所述电源正端电压U+为+25V，所述电源负端电压U-为-25V；所述敏感元的厚度D为20μm。
优选地，所述极化方法于真空环境下完成。
采用了上述技术方案后，与现有技术相比，具有以下有益效果：
1.极化后的灵敏元所制备器件的介电噪声降低，由该灵敏元芯片制备的探测器的比探测率提高；
2.特别适用于高介电常数的热释电材料及高介电损耗的热释电材料；
3.可高温极化。
附图说明
图1为本发明一实施例中灵敏元芯片上电极的结构示意图；
图2为本发明中极化方法的接线示意图；
图3a为本发明左电极极化方法示意图；
图3b为本发明右电极极化方法示意图。
具体实施方式
以下结合附图与具体实施例进一步阐述本发明的优点。
参阅图2，为本发明中灵敏元芯片上电极的结构示意图。灵敏元芯片包括有一个或多个热释电弛豫铁电单晶敏感元，其上下表面分别设有电极。现有技术中，设置在上下表面的电极均为全电极，而本发明中，设置在上表面的上电极为单电极，设置在下表面的电极结构由全电极变更为互相分离的左电极及右电极，顾名思义，左电极和右电极为分设的两个电极，排设在下表面的两处，两者互相分开，且不电连接或连通，使得位于下表面的下电极成型为一分割电极。
由于传统结构下的电极极化时，先极化一侧，后极化另一侧，但这样的极化方法，容易导致先极化的一侧部分退极化，热释电系数降低，损耗增大，也无法进行高温极化来进一步降低损耗。因此，本发明中，参阅图2、图3a及图3b，对左电极和右电极同时极化，具体为：将左电极与电源正端连接，而右电极与电源负端连接，同时将上电极接地。通过三电极极化，构建电极两边反向极化，便可完全极化，充分发挥分割电极的优势，降低损耗和介电常数，并且能高温极化。操作时，施加在上下电极上的电源电压U与敏感元的厚度D的关系为U＝KD，其中K＝1-2kV/mm，即每毫米敏感元两端可施加的电压为1kV-2kV。可以理解的是，在上述范围中的K值均可在本发明中使用。本实施例中，可选电源正端和负端的电压分别为+25V和-25V，厚度D为20μm，即该实施例中K值为1.25kV/mm。当如图中所示的连接方式连接后，左电极与上电极便形成如图3a中所示的极化回路，右电极与上电极便形成如图3b中所示的极化回路，极化后，具有该分隔电极的灵敏元的热释电性能也将提高。参阅下表表1，对于1mol％Mn掺杂的0.71Pb(Mg1/3Nb2/3)O3-0.29PbTiO3单晶敏感元，晶体学取向<111>，为本发明中极化方法与传统极化方法后极化性能对比：
表1
极化方式 热释电系数 相对介电常数 介电损耗
本发明极化 14.0×10-4 C/(m2K) 450 0.05％
传统极化 8.0×10-4 C/(m2K) 550 0.3％
可明显看出，本发明中极化方法极化后的介电损耗明显低于传统极化方法。
在一优选实施例中，以上极化过程在真空环境下进行，防止外部环境对极化效果的影响。
应当注意的是，本发明的实施例有较佳的实施性，且并非对本发明作任何形式的限制，任何熟悉该领域的技术人员可能利用上述揭示的技术内容变更或修饰为等同的有效实施例，但凡未脱离本发明技术方案的内容，依据本 发明的技术实质对以上实施例所作的任何修改或等同变化及修饰，均仍属于本发明技术方案的范围内。

Claims (4)

  1. 一种灵敏元芯片的极化方法，所述灵敏元芯片，包括一个或多个热释电弛豫铁电单晶敏感元；所述热释电弛豫铁电单晶敏感元的上下表面分别设有电极，其特征在于：
    设于所述上表面的上电极为单电极，设于所述下表面的下电极包括互相分离的左电极及右电极，所述左电极和右电极互不连通将所述下电极成型为一分割电极；
    所述左电极与电源正端连接，所述右电极与电源负端连接，所述上电极接地。
  2. 如权利要求1所述的极化方法，其特征在于，
    所述敏感元的厚度D与所述电源电压U的关系为：U＝KD，其中K＝1-2kV/mm。
  3. 如权利要求1所述的极化方法，其特征在于，
    所述电源正端电压U+为+25V，所述电源负端电压U-为-25V；
    所述敏感元的厚度D为20μm。
  4. 如权利要求1所述的极化方法，其特征在于，
    所述极化方法于真空环境下完成。
PCT/CN2015/071794 2014-05-12 2015-01-29 一种灵敏元芯片的极化方法 WO2015172587A1 (zh)

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CN104458007A (zh) * 2014-12-12 2015-03-25 电子科技大学 一种热释电红外探测器
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