WO2015158203A1 - 双层传片腔体 - Google Patents

双层传片腔体 Download PDF

Info

Publication number
WO2015158203A1
WO2015158203A1 PCT/CN2015/075244 CN2015075244W WO2015158203A1 WO 2015158203 A1 WO2015158203 A1 WO 2015158203A1 CN 2015075244 W CN2015075244 W CN 2015075244W WO 2015158203 A1 WO2015158203 A1 WO 2015158203A1
Authority
WO
WIPO (PCT)
Prior art keywords
cavity
chamber
layer
double
valve body
Prior art date
Application number
PCT/CN2015/075244
Other languages
English (en)
French (fr)
Inventor
吴凤丽
姜崴
方仕彩
Original Assignee
沈阳拓荆科技有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 沈阳拓荆科技有限公司 filed Critical 沈阳拓荆科技有限公司
Publication of WO2015158203A1 publication Critical patent/WO2015158203A1/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H01L21/67178—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers vertical arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67196—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the transfer chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers

Definitions

  • the invention relates to a double-layer transfer cavity structure, in particular to a cavity which is connected to each other but can be operated independently in each cavity.
  • the structure is mainly applied to a semiconductor coating device and belongs to a semiconductor thin film deposition application. And the field of preparation technology.
  • the existing semiconductor coating equipment has higher and higher requirements on the functionality and applicability of the chamber.
  • the wafer cavity is an important chamber for the wafer to pass in and out.
  • the film chamber should not only be applied to different equipment requirements.
  • the existing transfer cavities are mostly single-layer cavities, and there are also functional requirements for placing unequal height brackets in a single-layer cavity to realize the upper and lower layer transfer, which makes the overall maintenance of the equipment more complicated, and requires high installation precision. Ensure that the concentricity of the bracket is not equal.
  • the present invention aims to solve the above problems, and mainly solves the problem that the prior art is complicated in overall maintenance and increases the use cost of the device in order to realize the functions of the upper and lower layers, and a double-layer multi-chamber is designed. Independent transfer of the combined cavity.
  • the upper and lower cavities in the double-layer multi-chamber are respectively independent closed chambers, and each layer of the cavities can be independently transferred and not affected each other.
  • Double-layer transfer cavity including upper cavity (1), positioning pin (2), lower cavity (3), chamber A (4), chamber B (9), chamber C (10) and cavity Room D (14), suction line (7), vacuum measurement unit A (6) and vacuum measurement unit B (13) and valve body A (5), valve body B (8), valve body C (balanced atmosphere) 11) and valve body D (12).
  • the cavity is a combination of the upper layer cavity (1) and the lower layer cavity (3), and is fixed by a pin (2).
  • the double-layer chambers each have an independent suction line (7), a vacuum measuring assembly A (6) and a vacuum measuring assembly B (13), and the upper and lower chambers can independently perform the transfer function, which can satisfy the single-layer transfer and Two-layer transfer requirements for both functions.
  • Each of the above cavities has two chambers communicating with each other, the upper chamber is composed of chamber C (10) and chamber D (14); the lower chamber is composed of chamber A (4) and chamber B (9) )composition.
  • Each chamber is provided with a valve body A (5), a valve body B (8), a valve body C (11) and a valve body D (12) which are balanced in atmosphere, and the wafer can be independently transferred between the chambers. The outgoing functions do not affect each other.
  • each layer of the cavities is an independent closed chamber, which can realize the function of independently transmitting the film
  • Two independent chambers are arranged inside each layer cavity, the chambers are connected to each other, and the pumping pipeline and the vacuum measuring component are shared.
  • the transfer function can be independently realized between the chambers, and any chamber can be used for daily routine. Maintenance operations.
  • Figure 1 is a schematic view of the structure of the present invention.
  • the double-layer transfer cavity includes an upper cavity 1, a positioning pin 2, a lower cavity 3, a chamber A4, a chamber B9, a chamber C10 and a chamber D14, an exhaust line 7, and a vacuum measuring assembly.
  • A6 and vacuum measuring unit B13 and valve body A5, valve body B8, valve body C11 and valve body D12 which balance the atmosphere.
  • the cavity is a combination of the upper layer cavity 1 and the lower layer cavity 3, and is fixed by the pin 2.
  • the double-layer chambers each have an independent suction line 7 and a vacuum measuring assembly A6 and a vacuum measuring unit B13.
  • the upper and lower chambers can independently perform the transfer function, and can be applied to both the single layer transfer and the double layer transfer.
  • Each of the above cavities has two chambers communicating with each other, the upper chamber 1 is composed of a chamber C 10 and a chamber D 14 ; the lower chamber 3 is composed of a chamber A 4 and a chamber B 9 . And each chamber is separately provided with a valve body A that balances the atmosphere 5. Valve body B 8, valve body C 11 and valve body D 12, the functions of wafer transfer and transmission can be independently realized between the chambers without affecting each other.
  • the double-layer transfer cavity is specifically implemented by first lifting the lower cavity 3 on the bracket, then mounting the positioning pin 2, and then lifting the upper cavity 1 to the upper part of the lower cavity 3, and the position is calibrated by the positioning pin 2.

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

双层传片腔体，主要解决现有技术为了实现上下两层传片的功能而使设备整体维护复杂，增加设备使用成本的问题，而设计了一种能够实现双层多腔室的独立传片组合腔体。所述的双层多腔室中的上层腔体（1）和下层腔体（3）分别为独立密闭腔室，每层腔体都可以独立进行传片操作，彼此间不相互影响。每层腔体内部都有两个相互联通的腔室，每个腔室同样可以进行晶圆传片、取片独立操作，彼此间的操作也是互不影响。具有结构合理，设备整体维护相对容易，能够降低设备使用成本的特点。可广泛应用于半导体薄膜沉积应用及制备技术领域。

Description

双层传片腔体 技术领域
本发明涉及一种双层传片腔体结构，特别是一种在每层腔体内设有互相连通但又能独立操作的腔室，此结构主要应用于半导体镀膜设备中，属于半导体薄膜沉积应用及制备技术领域。
背景技术
现有的半导体镀膜设备对腔室的功能性和适用性要求越来越高，传片腔体是晶圆传进、传出的重要腔室，传片腔室不仅要适用不同的设备要求，同时还要有相对独立并具有传取片功能的腔室。目前现有传片腔多为单层腔体，亦有在单层腔体中安置不等高支架来实现上下两层传片的功能要求，使设备整体维护较复杂，要求安装精度非常高才能保证不等高支架的同心度。
 技术问题
本发明以解决上述问题为目的，主要解决现有技术为了实现上下两层传片的功能而使设备整体维护复杂，增加设备使用成本的问题，而设计了一种能够实现双层多腔室的独立传片组合腔体。 所述的双层多腔室中的上层和下层腔体分别为独立密闭腔室，每层腔体都可以独立进行传片操作，彼此间不相互影响。每层腔体内部都有两个相互联通的腔室，每个腔室同样可以进行晶圆传片、取片独立操作，彼此间的操作也是互不影响。
 技术解决方案
双层传片腔体，包括上层腔体（1）、定位销（2）、下层腔体（3）、腔室A（4）、腔室B（9）、腔室C（10）及腔室D（14）、抽气管路（7）、真空测量组件A（6）和真空测量组件B（13）及平衡大气的阀体A（5）、阀体B（8）、阀体C（11）和阀体D（12）。上述双层传片腔体，腔体是以上层腔体（1）和下层腔体（3）的形式组合而成，并通过销钉（2）固定。双层腔体各自具有独立的抽气管路（7）和真空测量组件A（6）和真空测量组件B（13），上下层腔体均可以独立完成传片功能，能够满足单层传片和双层传片两种功能的要求。 上述腔体都具有两个相互联通的腔室，上层腔体是由腔室C（10）和腔室D(14)组成；下层腔体是由腔室A（4）和腔室B（9）组成。且每个腔室都分别设有平衡大气的阀体A（5）、阀体B（8）、阀体C（11）和阀体D（12），腔室间可以独立实现晶圆传进、传出的功能，彼此不产生影响。
 有益效果
1、实现了两层独立腔体的上下组合，每层腔体都是独立密闭腔室，可以实现独立进行传片的功能；
2、每层腔体内部设置两个相互独立的腔室，腔室间相互联通，共用抽气管路和真空测量组件，腔室间可以独立实现传片功能，可对任意腔室进行单独的日常维护操作。
3、具有结构合理，设备整体维护相对容易，能够降低设备使用成本的特点。可广泛应用于半导体薄膜沉积应用及制备技术领域。
附图说明
图1是本发明的结构示意图。
本发明的最佳实施方式
实施例
参照图1，双层传片腔体，包括上层腔体1、定位销2、下层腔体3、腔室A4、腔室B9、腔室C10及腔室D14、抽气管路7、真空测量组件A6和真空测量组件B13及平衡大气的阀体A5、阀体B8、阀体C11和阀体D12。上述双层传片腔体，腔体是以上层腔体1和下层腔体3的形式组合而成，并通过销钉2固定。双层腔体各自具有独立的抽气管路7和真空测量组件A6和真空测量组件B13，上下层腔体可以独立完成传片功能，可以适用单层传片和双层传片两种功能要求。 上述腔体都具有两个相互联通的腔室，上层腔体1是由腔室C 10和腔室D 14组成；下层腔体3是由腔室A 4和腔室B 9组成。且每个腔室都分别设有平衡大气的阀体A 5、阀体B 8、阀体C 11和阀体D 12，腔室间可以独立实现晶圆传进、传出的功能，彼此不产生影响。 双层传片腔体具体实施是将下层腔体3首先吊装在支架上固定，然后安装定位销2，再将上层腔体1吊装到下层腔体3的上部，位置依靠定位销2进行校准，然后再安装真空测量组件A 6和真空测量组件B 13及平衡大气的阀体A 5、阀体B 8、阀体C 11和阀体D 12，最后安装抽气管路7，使整个双层传片腔体处于稳定的安装状态，最后进行工艺操作。
 本发明的实施方式
工业实用性
序列表自由内容

Claims (1)

1、一种双层独立腔体，包括真空测量组件B（13）、平衡大气的阀体A（5）及抽气管路（7），其特征在于：它还包括上层腔体（1）、定位销（2）、下层腔体（3）、腔室A（4）、腔室B（9）、腔室C（10）及腔室D（14）、抽气管路（7）、真空测量组件A（6）和真空测量组件B（13）及平衡大气的阀体A（5）、阀体B（8）、阀体C（11）和阀体D（12），上述双层传片腔体，腔体是以上层腔体（1）和下层腔体（3）的形式组合而成，并通过销钉（2）固定，双层腔体各自具有独立的抽气管路（7）和真空测量组件A（6）和真空测量组件B（13），上述腔体具有两个相互联通的腔室，上层腔体是由腔室C（10）和腔室D(14)组成；下层腔体是由腔室A（4）和腔室B(9)组成，且每个腔室都分别设有平衡大气的阀体A（5）、阀体B（8）、阀体C（11）和阀体D（12），腔室间可以独立实现晶圆传进、传出，彼此不产生影响。
PCT/CN2015/075244 2014-04-15 2015-03-27 双层传片腔体 WO2015158203A1 (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201410151230.8A CN103928378A (zh) 2014-04-15 2014-04-15 双层传片腔体
CN201410151230.8 2014-04-15

Publications (1)

Publication Number Publication Date
WO2015158203A1 true WO2015158203A1 (zh) 2015-10-22

Family

ID=51146557

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2015/075244 WO2015158203A1 (zh) 2014-04-15 2015-03-27 双层传片腔体

Country Status (2)

Country Link
CN (1) CN103928378A (zh)
WO (1) WO2015158203A1 (zh)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103928378A (zh) * 2014-04-15 2014-07-16 沈阳拓荆科技有限公司 双层传片腔体
CN104213102B (zh) * 2014-09-01 2016-08-24 沈阳拓荆科技有限公司 腔体气流方向可变结构
CN104928646B (zh) * 2015-04-28 2018-05-08 沈阳拓荆科技有限公司 双层式负载腔室真空与大气快速平衡结构
CN106611722A (zh) * 2015-10-21 2017-05-03 沈阳拓荆科技有限公司 两腔室集定位与对中心功能于一体的双层支架结构
CN109161867B (zh) * 2018-10-11 2023-08-08 中国科学技术大学 可分离式真空互联系统
CN112795906A (zh) * 2021-01-22 2021-05-14 无锡琨圣智能装备股份有限公司 一种双层o-ald原子层沉积设备

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101335187A (zh) * 2007-06-29 2008-12-31 株式会社迅动 基板处理装置
CN102064124A (zh) * 2009-11-12 2011-05-18 株式会社日立高新技术 半导体被处理基板的真空处理系统及半导体被处理基板的真空处理方法
CN202898519U (zh) * 2012-09-29 2013-04-24 沈阳拓荆科技有限公司 带加热功能的真空装载腔
CN103928378A (zh) * 2014-04-15 2014-07-16 沈阳拓荆科技有限公司 双层传片腔体

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1315179B1 (it) * 2000-01-31 2003-02-03 Clim Air 50 Srl Attrezzatura per l'essicazione di balle di foraggio di formaqualsivoglia.
US20040141832A1 (en) * 2003-01-10 2004-07-22 Jang Geun-Ha Cluster device having dual structure
JP4642619B2 (ja) * 2005-09-22 2011-03-02 東京エレクトロン株式会社 基板処理システム及び方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101335187A (zh) * 2007-06-29 2008-12-31 株式会社迅动 基板处理装置
CN102064124A (zh) * 2009-11-12 2011-05-18 株式会社日立高新技术 半导体被处理基板的真空处理系统及半导体被处理基板的真空处理方法
CN202898519U (zh) * 2012-09-29 2013-04-24 沈阳拓荆科技有限公司 带加热功能的真空装载腔
CN103928378A (zh) * 2014-04-15 2014-07-16 沈阳拓荆科技有限公司 双层传片腔体

Also Published As

Publication number Publication date
CN103928378A (zh) 2014-07-16

Similar Documents

Publication Publication Date Title
WO2015158203A1 (zh) 双层传片腔体
SG152213A1 (en) Multi-port pumping system for substrate processing chambers
TW200715448A (en) Vacuum processing apparatus, semiconductor device manufacturing method and semiconductor device manufacturing system
JP2010245036A5 (ja) 照明装置の製造装置
CN104928646B (zh) 双层式负载腔室真空与大气快速平衡结构
CN107884310B (zh) 基于双测试室气路转换的材料放气率测量装置
TW201202581A (en) Vacuum-exhaust ball valve and vacuum exhaust apparatus
WO2019075844A1 (zh) 一种柔性基板及其制备方法、显示器
CN104846347B (zh) 双层式负载腔室的回填及抽气结构
Justesen et al. High rates of reduced susceptibility in the Bacteroides fragilis group isolated from blood cultures--the first national survey in Denmark
WO2015006945A1 (zh) 压力表
WO2011156625A4 (en) Full-enclosure, controlled-flow mini-environment for thin film chambers
CN205556765U (zh) 一种真空离子蒸发镀膜装置
CN202898520U (zh) 共用真空系统的双腔真空装载腔
CN105506730B (zh) 一种单晶炉的主真空管路结构
CN201840207U (zh) 一种传热系数可调的杯子
KR20150107397A (ko) 하이 배리어성 코팅 조성물
CN106017742A (zh) 一种真空环境下温度传感器校准方法
WO2020133195A1 (zh) 一种测量负压的装置
CN205117642U (zh) 缸体斜置式s阀泵
WO2021060677A3 (ko) 아미노실란 화합물 및 이를 포함하는 실리콘 함유 박막 증착용 조성물
CN207387693U (zh) 真空无痕吸盘芯
KR101694759B1 (ko) O-157:h7 대장균의 검출을 위한 3차원 그래핀 옥사이드 및 아연산화물 포레스트 구조체의 제조 방법
TWI481844B (zh) Positive and negative micro pressure relief valve detection device
CN205861275U (zh) 一种组合式差压变送器

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 15780176

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 15780176

Country of ref document: EP

Kind code of ref document: A1