WO2015135908A1 - Élément optoélectronique et procédé de fabrication dudit élément optoélectronique - Google Patents

Élément optoélectronique et procédé de fabrication dudit élément optoélectronique Download PDF

Info

Publication number
WO2015135908A1
WO2015135908A1 PCT/EP2015/054907 EP2015054907W WO2015135908A1 WO 2015135908 A1 WO2015135908 A1 WO 2015135908A1 EP 2015054907 W EP2015054907 W EP 2015054907W WO 2015135908 A1 WO2015135908 A1 WO 2015135908A1
Authority
WO
WIPO (PCT)
Prior art keywords
silicone body
optoelectronic
ptfe
silicone
coating
Prior art date
Application number
PCT/EP2015/054907
Other languages
German (de)
English (en)
Inventor
Kathy SCHMIDTKE
Martin Brandl
Original Assignee
Osram Opto Semiconductors Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors Gmbh filed Critical Osram Opto Semiconductors Gmbh
Publication of WO2015135908A1 publication Critical patent/WO2015135908A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0025—Processes relating to coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape

Definitions

  • the present invention relates to an optoelectronic component according to patent claim 1 and to a method for producing an optoelectronic component according to patent claim 5.
  • An object of the present invention is to provide an optoelectronic device. This task is performed by an optoelectronic component with the
  • a further object of the present invention is to specify a method for producing an optoelectronic component. This object is achieved by a method having the features of claim 5.
  • An optoelectronic component includes a Silikonkör ⁇ by, in an optoelectronic semiconductor chip is embedded.
  • the silicone body has a coating comprising PTFE.
  • the PTFE-containing coating of the silicone body reduces stickiness of the surface of the silicone body.
  • the risk of adhesion of dirt on the surface of the silicon body can partake of legally be reduced before ⁇ .
  • the likelihood that silicone bodies of a plurality of optoelectronic devices adhere to one another can be reduced. This improves the handling of the optoelectronic ⁇ African component.
  • the silicone body forms an optical lens.
  • the optical lens can be used for focusing and beam-forming by beam emitted by the optoelectronic component electromagnetic radiation ⁇ shear.
  • the silicon body comprising PTFE, a tackiness of a Au ⁇ z Structure of the optical lens is advantageously reduced.
  • the optoelectronic component of the silicone body has embedded wellenhavertie ⁇ Rende particles.
  • the wavelength-converting particles embedded in the silicone body can serve to convert a wavelength of an electromagnetic radiation emitted by the optoelectronic semiconductor chip of the optoelectronic component.
  • the wavelength-converting particles embedded in the silicone body of the optoelectronic component can be provided to convert electromagnetic radiation emitted by the optoelectronic semiconductor chip into the light of a wavelength from the ultraviolet or blue spectral range into white light.
  • the silicone body per the optoelectronic component thus causes a volume conversion.
  • the embedded into the silicone body of the optoelectronic component wavelength converting particles can, for example, by sedimentation or by electrophoretic deposition, also be arranged chipnah to cause a chip near Konvertie ⁇ tion.
  • the PTFE coating having the Si ⁇ likon stressess advantageously reduces a tackiness of the surfaces of the wavelength-Silikonkör- pers.
  • the optoelectronic semiconductor chip is arranged on a carrier.
  • the carrier can also serve for electrical contacting of the optoelectronic semiconductor chip.
  • a method for producing an optoelectronic component comprises steps for arranging an optoelectronic semiconductor chip on a carrier, for embedding the optoelectronic semiconductor chip in a silicone body, and for coating the silicone body with a coating comprising PTFE.
  • a stickiness of the surface of the silicone body ⁇ be reduced.
  • the probability of dirt adhering to the surface of the silicone body of the optoelectronic component obtainable by the method can advantageously be reduced.
  • the risk that the silicone body of a plurality of optoelectronic components adhere to each other can be advantageously reduced. This makes it possible to handle advantageously well the obtainable by the process optoelectronic Bauele ⁇ ment.
  • the loading ⁇ layers of silicone body is carried out by immersion in a bath.
  • the process step can be characterized perform for a variety of optoelectronic devices simultaneously, allowing a quick and hereby adoptedgüns ⁇ term implementation of the method.
  • the loading ⁇ layers of silicone body is done by a spray method.
  • this is a parallel through ⁇ execution of the process step for a plurality optoelekt ⁇ ronischer components enables the same time. As a result, the process can be carried out with little time and expense.
  • the coating is produced from a solution having a PTFE-based Me ⁇ thoxysilan.
  • the PTFE-based methoxysilane can form a firm bond with the surface of the Silikonkör ⁇ pers of the optoelectronic device.
  • the PTFE-based methoxysilane can form a covalent bond with functional groups on the surface of the silicone body, in particular with OH groups on the surface of the silicone body.
  • the coating formed from the PTFE-based methoxysilane can form a PTFE layer on its outer side, which has a GE ⁇ geninate the original surface of the silicon body reduced stickiness.
  • the solution comprises a fluorinated solvent, and is between 0.01 weight percent and 1 weight percent ⁇ a PTFE based on methoxy silane.
  • the solution may comprise 0.1 weight percent of the PTFE-based methoxysilane.
  • ⁇ advantage adhesive enough, such concentration has been found to be suitable for generation of a stickiness-reducing coating of the silicone body.
  • the solution comprises a PTFE-based methoxy-trisilane.
  • the use of a PTFE-based methoxy-trisilane has been found to be particularly suitable for the formation of a the stickiness of the silicone body reducing coating proved.
  • the silicone body is formed by compression molding.
  • this allows a simple and inexpensive Massenpro ⁇ production.
  • this comprises a further step of dividing the carrier by one
  • the method thereby enables pa ⁇ rallele production of a plurality of optoelectronic components in common operations.
  • the optoelectronic components manufactured in parallel presented are initially in a composite (benefits) and can only be isolated at ⁇ closing. Due to the parallel processing of the plurality of optoelectronic components, the production costs per individual optoelectronic component can advantageously be reduced.
  • the silicone body is also parted during the dicing of the carrier.
  • the cut surfaces resulting from the division of the silicone body can subsequently be reduced in their tackiness by coating with the PTFE-containing coating.
  • the silicone body is coated before and after the cutting of the silicone body with a coating comprising PTFE. ⁇ advantageous way legally is ensured that all relevan ⁇ th surfaces of the silicone body with a stickiness-reducing coating to be coated.
  • this egg ⁇ NEN further step comprises of arranging a wavelength converting member on the optoelectronic semiconductor chip.
  • the wavelength-converting element can also be embedded in the silicone body.
  • the wel ⁇ lenauernkonvert Schlierende element may serve to convert a light emitted by the optoelectronic semiconductor chip of the available by the process of the optoelectronic component electromagnetic radiation into electromagnetic radiation of a different wavelength.
  • white light can be generated from electromagnetic radiation having a wavelength from the blue or ultraviolet spectral range.
  • FIG. 1 shows a sectional side view of a carrier with optoelectronic semiconductor chips arranged thereon;
  • FIG. 2 shows a sectional side view of the carrier with wavelength-converting elements arranged on the optoelectronic semiconductor chips
  • FIG. 3 shows a sectional side view of the carrier after embedding the optoelectronic semiconductor chips in silicone body
  • FIG. 5 is a side sectional view of the carrier with egg ⁇ ner formed on a surface of the silicone body coating.
  • Fig. 6 is a sectional side view of a number formed by cerium ⁇ share of the carrier optoelectronic components; 7 is a sectional side view of a lead frame with laminated back sheet;
  • Figure 8 is a sectional side view of the carrier with up as ⁇ arranged optoelectronic semiconductor chips.
  • FIG. 10 shows a sectional side view of the carrier after the embedding of the carrier and the optoelectronic semiconductor chips in a silicone body
  • FIG. 11 is a sectional side view of the silicone body after removal of the backsheet
  • FIG. 12 is a sectional side view of the arranged on a Trä ⁇ gerfolie and divided silicone body.
  • FIG. 14 shows a sectional side view of a plurality of optoelectronic components formed from the divided silicone bodies.
  • FIG. 1 shows a schematic sectional side view of a carrier 110.
  • the carrier 110 may be formed, for example, as a ceramic carrier.
  • the carrier 110 is formed as a substantially flat disc and has a
  • electric Kunststoffflä ⁇ surfaces and electrical circuits can be provided, which can also be connected via formed in the carrier 110 through ⁇ contacts with each other optionally.
  • the electrical contact surfaces and conductor tracks may be formed, for example, as metallizations.
  • a plurality of optoelectronic semiconductor chips 120 is arranged.
  • the optoelectronic semiconductor chip 120 may be formed beispielswei ⁇ se as light emitting diode chips (LED chips).
  • the optoelectronic semiconductor chip 120 are provided for hen to electromagnetic radiation, for example sichtba ⁇ res light to emit.
  • the optoelectronic semiconductor chip 120 are preferably in a regular Anord ⁇ voltage, disposed at the top 111 of the carrier 110, for example, in a rectangular grid.
  • Each optoelectronic semiconductor chip 120 has a top side 121 and a ⁇ the top side 121 opposite Un ⁇ underside 122.
  • the optoelectronic semiconductor chips 120 are arranged on the upper side 111 of the carrier 110 such that the lower sides 122 of the optoelectronic
  • Semiconductor chips 120 of the top 111 of the carrier 110 are supplied ⁇ .
  • FIG. 2 shows a schematic sectional side view of the carrier 110 in a processing state which follows the representation of FIG.
  • Wavelength-converting elements 130 are arranged on the upper sides 121 of the optoelectronic semiconductor chips 120.
  • the arrangement of the wavelength-converting elements 130 on the upper sides 121 of the optoelectronic semiconductor chips 120 can be effected, for example, by means of layer transfer.
  • the wavelength converting elements 130 are provided to convert light emitted by the optoelectronic semiconductor chip 120 electromagnetic radiation into electromagnetic radiation of other ⁇ specific wavelength.
  • the wavelength converting elements 130 may be provided to convert electromagnetic radiation having a wavelength from the blue or ultraviolet spectral region to white light.
  • the wavelength converting elements 130 may have embedded wavelength converting Par ⁇ Tikel in a matrix material.
  • the wavelength-converting particles may comprise, for example, an organic or inorganic phosphor.
  • the wavelength-converting particles may be designed to absorb electromagnetic radiation having a first wavelength and then to emit electromagnetic radiation having a second, typically larger, wavelength.
  • FIG. 3 shows a schematic sectional side view of the carrier 110 in a processing state which follows the representation of FIG.
  • the optoelectronic semiconductor chips 120 and the wavelength-converting The elements 130 on the upper side 111 of the carrier 110 have been embedded in a silicone body 140.
  • the silicone body 140 has a silicone.
  • the silicone body 140 can be produced, for example, by compression molding or by another molding process (molding process).
  • the silicone body 140 defines a plurality of optical lenses 142.
  • Each provided optoelectronic semiconductor chip 120 and the respective optoelectronic semiconductor chip 120 associated with wavelength converting element 130 is provided with an op ⁇ tables lens 142nd
  • the optical lenses 142 formed by the silicon body 140 may serve emitted by the optoelectronic semiconductor chip 120 and to cause, if appropriate, converted by the wavelength converting elements 130 electromagnetic radiation bün ⁇ punching or otherwise beam shaping.
  • the optical lenses 142 may be formed as converging lenses.
  • the sections of the silicone body 140 which form the optical lenses 142 are connected to one another in the example shown schematically in FIG. 3 over the upper side 111 of the carrier 110 covering surface portions 143 of the silicone body 140. It is not necessary that the FLAE ⁇ chenabitese are formed in place and closed throughout the 143rd
  • the optical lenses 142 may also be partially or completely separated. In this case, multiple silicone bodies 140 are present.
  • the optical lens 142 forming portions of the silicone body 140 and the surface portions 143 of the silicone ⁇ body 140 each have an outer surface 141.
  • the surface 141 of the silicone body 140 may be sticky. As a result, for example, dirt particles can easily adhere to the surface 141 of the silicone body 140. Also, portions of the surface 141 of the silicone body 140 may be easily attached to other portions of the surface 141 of the silicone body. pers 140 or to surfaces of other silicone bodies. For ease of handling, it is desirable to reduce the stickiness of the surface 141 of the silicone body 140.
  • FIG. 4 shows a schematic sectional side view of the carrier 110 during one of the illustration of FIG. 3 temporally subsequent processing step.
  • the carrier 110 is dipped head-first into a bath 150 of a solution 151 with the silicone body 140 arranged on the upper side 111 of the carrier 110 and the optoelectronic semiconductor chips 120 and wavelength-converting elements 130 embedded therein.
  • the immersion does not necessarily have to be upside down.
  • the solution 151 comprises a solvent and a PTFE-based methoxysilane.
  • the solvent is preferably a fluorinated solvent.
  • the PTFE-based methoxy silane ⁇ preferably constitutes between 0.01 weight percent and 1 weight percent of the solution 151st
  • the PTFE-based methoxysilane can be about 0.1 weight percent of the solution Lö ⁇ 151st
  • the PTFE-based Me ⁇ thoxysilan is preferably a PTFE-based methoxy-trisilane.
  • the contained in the solution 151 of the bath 150 PTFE-based methoxysilane binds to the surface 141 of silicon body 140 and forms at the surface 141 of the silicone ⁇ body 140 is a coating 160.
  • FIG. 5 shows a specific ⁇ matic cross-sectional side view of the carrier 110 covered with the silicon body 140 and the coating 160 formed on the surface 141 of the Sili ⁇ kon stresses 140 after removal from the bath 150. the coating 160, the surface 141 of silicon body 140 in the area of opti ⁇ rule lens 142 and the surface portions 143rd
  • connection of the PTFE-based methoxysilane to the surface 141 of silicon body 140 may be a covalent Bin ⁇ dung to functional groups, in particular OH-groups, at the surface 141 of the silicone body 140 include. This advantageously results in a stable connection of the coating 160 to the surface 141 of the silicone body 140.
  • the coating 160 formed on the surface 141 of the silicone body 140 simultaneously forms a PTFE layer on its surface 161 facing away from the surface 141 of the silicone body 140.
  • This PTFE layer on the surface 161 of the coating 160 has a reduced compared to the surface 141 of silicon body 140 Sticky ⁇ ness.
  • the coating 160 on the surface 141 of the silicone body 140 can also be formed by immersion in the bath 150 by a spraying process.
  • a solution comprising a PTFE-based methoxysilane is sprayed onto the surface 141 of the silicone body 140.
  • the solution may be formed like the solution 151 of the bath 150, but may also have a higher or lower weight fraction of PTFE-based methoxysilane.
  • Fig. 6 shows a schematic sectional side view of a plurality of first optoelectronic devices 100.
  • the optoelectronic components 100 may be beispielswei ⁇ se light-emitting devices (LED) devices.
  • the first optoelectronic components 100 are formed by dividing the carrier 110 and the silicone body 140 arranged on the upper side 111 of the carrier 110 with the optoelectronic semiconductor chips 120 and wavelength-converting elements 130 embedded therein. The cutting of the carrier 110 and the silicone body 140 may be done by sawing, for example.
  • each of the first opto ⁇ electronic components 100 comprises a portion of the original silicone body 140 forming an optical lens 142 with an optoelectronic half embedded therein.
  • FIG. 7 shows a schematic sectional side view of a leadframe 210.
  • the leadframe 210 can also be referred to as a leadframe.
  • the lead frame 210 comprises an electrically conductive material, typically a metal.
  • the lead frame 210 may include silver or copper.
  • the lead frame 210 may also have a coating.
  • the lead frame 210 has a substantially flat shape with a top surface 211 and one of the upper side 211 opposite bottom ⁇ 212th
  • the leadframe 210 has apertures produced by, for example, etching or punching, which divide the leadframe 210 in a lateral direction into a plurality of first sections 213 and second sections 214.
  • a backside sheet 270 is laminated on the underside 212 of the lead frame 210.
  • FIG. 8 shows a schematic sectional side view of the leadframe 210 in one of the illustration of FIG. 7 temporally subsequent processing status.
  • a plurality of optoelectronic ⁇ shear semiconductor chip has been placed 220th
  • the optoelekt ⁇ tronic semiconductor chip 220 may be formed for example as light-emitting diodes chips (LED chips).
  • the opto ⁇ electronic semiconductor chips 220 are intended to emit electromagnetic radiation, such as visible light.
  • Each optoelectronic semiconductor chip 220 has a top side 221 and a ⁇ the top side 221 opposite Un ⁇ underside 222.
  • the optoelectronic semiconductor chips 220 are arranged on the leadframe 210 such that the bottom side 222 of each optoelectronic semiconductor chip 220 faces the top side 211 of the leadframe 210.
  • the undersides 222 of the optoelectronic semiconductor chips 220 can be connected to the top side 211 of the leadframe 210, for example via a solder connection or an adhesive bond.
  • the optoelectronic semiconductor chips 220 are on the first portions 213 of
  • Lead frame 210 arranged.
  • an optoelectronic semiconductor chip 220 on the top 211 of the lead frame 210 is disposed.
  • the illustrated example 220 have the optoelectronic semiconductor chip on its top side two 221 electrical ⁇ specific contact areas which are electrically conductively connected via bonding wires 223 to the lead frame 210th
  • the optoelectronic semiconductor chip 220 electrically connected to a first Ab ⁇ section 213 of the lead frame 210 and a respective further electrical contact area of each optoelectronic semiconductor ⁇ semiconductor chip 220 via a further bonding wire 223
  • the electrical contact surface arranged on the underside 222 of the respective optoelectronic semiconductor chip 220 can be connected to the respective first section 213 of the leadframe 210 in an electrically conductive manner, for example via a solder connection.
  • the bonding wire 223 connected to the respective first section 213 of the leadframe 210 may be omitted in this case.
  • FIG. 9 shows a schematic sectional side view of the leadframe 210 in a processing state which follows the illustration of FIG.
  • a Vergussrahmen 230 has been attached ⁇ sets.
  • the potting frame 230 preferably circumscribes the upper surface 211 of the lead frame 210 in an area near the outer periphery of the lead frame 210.
  • the lead frame 210 is located in a basin formed by the back sheet 270 and the potting frame 230.
  • the potting frame 230 can be created, for example, by a dispensing method.
  • FIG. 10 shows a schematic sectional side view of the lead frame 210 in a processing state which follows the illustration of FIG.
  • the lead frame 210 and at ⁇ parent optoelectronic semiconductor chip 220 have been embedded in a silicon body 240 at the top 211 of the lead frame 210th Also, the electrical contact surfaces of the optoelectronic semiconductor chip 220 connected to the lead frame 210. Bond wires 223 are embedded in the silicone body 240 wor ⁇ .
  • the silicone body 240 comprises a silicone.
  • the silicone body 240 may comprise embedded particles, in particular embedded wavelength-converting particles.
  • the wavelength-converting particles embedded in the silicone body 240 can serve to emit a wavelength of the light emitted by the optoelectronic semiconductor chips 220. converted electromagnetic radiation.
  • the wavelength-converting particles may be formed to absorb electromagnetic radiation of a first wavelength and then to emit electromagnetic radiation of a second, typically larger, wavelength.
  • the wavelength-converting particles embedded in the silicone body 240 may be provided for electromagnetic radiation having a wavelength from the blue or ultraviolet radiation emitted by the optoelectronic semiconductor chips 220
  • the silicone body 240 Convert spectral range to white light.
  • wavelength-converting particles can also be omitted.
  • the silicone body 240 may have been applied, for example, by a dispensing method. In this case, the material forming the silicone body 240 is filled in liquid form into the area bounded by the potting frame 230 and the backsheet 270 and then cured.
  • the material of the silicon body 240 forming fills the through Vergussrahmen 230 and the back sheet 270 at ⁇ limited range so completely that the upper surface 211 of the lead frame 210 is substantially completely covered by the material of the silicon body 240, the breakthroughs of the lead frame 210 are substantially completely filled with the material of the silicone body 240 and the optoelectronic semiconductor chips 220 are substantially completely embedded in the silicone body 240. It is also possible to form the silicone body 240 by compression molding. In this case, the application of the Vergussrahmens 230 shown with reference to FIG 9 can be omitted.
  • the silicone body 240 has an upper side 241 facing away from the lead frame 210 and the rear side foil 270.
  • the top 241 of the silicone body 240 may have a high tack.
  • the upper surface 241 of silicon body 240 at an shown in Fig. 10 processing status following processing step can with a the tackiness reducing coating will be provided, as will be explained below.
  • FIG. 11 shows a schematic sectional side view of the leadframe 210 and the silicone body 240 in a processing state which follows the illustration of FIG.
  • the back sheet 270 has been dissolved off from the Silikonkör ⁇ by 240 and the bottom 212 of the lead frame 210th
  • the Sili ⁇ konisme 240 with the embedded lead frame 210 and the embedded optoelectronic semiconductor chip is placed 220 on a carrier film 271, which is shown in the schemati ⁇ rule sectional side view of Fig. 12.
  • the bottom 212 of the lead frame 210 of the carrier film 271 is facing.
  • the carrier foil 271 can also be referred to as a sawing foil.
  • the silicone body 240 and the leadframe 210 embedded in the silicone body 140 are cut.
  • the cutting of the silicone body 240 and of the lead frame 210 embedded in the silicone body 240 may, for example, be carried out by a sawing process, a stamping process, a cutting process or another process.
  • Fig. 12 shows the entstande by dicing the silicon body 240 ⁇ NEN parts of the silicon body 240th
  • Each of the entstande ⁇ NEN by dicing the silicon body 240 parts of the silicon body 240 has in in Fig. 12 Darge ⁇ presented example, a first portion 213 of thenatirah- , 0
  • mens 210 and a second portion 214 of the lead frame 210 on.
  • the first portion 213 and the second portion 214 of the lead frame 210 are separated from each other and electrically isolated from each other.
  • On top of 211 of the first portion 213 of the lead frame 210 ei ⁇ ner of the optoelectronic semiconductor chip 220 is arranged.
  • the electrical contact surfaces of the optoelectronic semiconductor chip 220 are electrically conductively connected to the first section 213 and the second section 214 of the conductor frame 210.
  • the parts of the silicone body 240 which have been formed by dividing the silicone body 240 have side surfaces 242 formed next to the upper side 241 at the dividing edges.
  • the side surfaces 242 of the parts of the silicone body 240 may have a high tackiness.
  • the upper sides 241 of the parts of the silicone body 240 formed by dividing the silicone body 240 may also have a high tackiness if the upper side 241 of the silicone body 240 has not previously been provided with a tackiness-reducing coating.
  • FIG. 13 shows a schematic sectional side view of the parts of the silicone body 240 arranged on the carrier film 271 during a processing step which follows the illustration of FIG.
  • the parts of the silicone body 240 arranged on the carrier film 271 are dipped head-on into a bath 250 of a solution 251.
  • the immersion of the parts of the silicone body 240 in the bath 250 does not necessarily have to be done upside down.
  • Solution 251 comprises a solvent and a PTFE-based methoxysilane.
  • the solvent is preferably a fluorinated solvent.
  • the PTFE-based ⁇ methoxy silane makes preferred an amount between 0.01 wt percent and 1 percent by weight of the solution 251 out.
  • the PTFE-based methoxysilane can make an on ⁇ part of 0.1 percent by weight of the solution 251st
  • the PTFE-based methoxysilane is preferably a PTFE-based methoxy-trisilane.
  • a PTFE-containing coating 260 is formed on the side surfaces 242, which is visible in the sectional side view seen in FIG. While shown in Fig. 13 processing step if the upper surface 241 of the silicon body not be ⁇ already has been provided in a preceding method step with a coating 240, the PTFE containing coating 260 is also formed on the upper surface 241 of the portions of the silicon body 240.
  • the coating 260 is formed in that PTFE-based methoxysilane from the solution 251 is covalently bonded to functional groups, in particular ⁇ sondere OH groups of the silicone of the silicone body 240. Toggle.
  • An outer surface 261 of the coating 260 forms a PTFE layer which has a low tack.
  • the low stickiness of the surface 261 of the coating 260 reduces the Ge ⁇ driving an adhesion of dirt particles at the surface 261 of the coating 260, the parts of the silicon body 240, and a risk that the resultant by dividing the silicone body 240 parts of the silicon body 240 aneinan ⁇ the stick ,
  • the upper side 241 of the silicone body 240 can already be seen in a representation of FIG. 10 temporally subsequent processing step before dividing the silicone body 240 and the lead frame 210 with the coating 260 ver ⁇ . This can be done analogously to the processing step illustrated in FIG. 13 by immersing the silicone body 240 in the bath 250 of the solution 251.
  • coating the side surfaces 242 of the silicone body 240 by immersion in the bath 250th the solution 251 after dividing the silicone body 240 and the lead frame 210 can still be made afterwards.
  • the coating 260 may also be applied by a spraying process instead of dipping the silicone body 240 or the parts of the silicone body 240 formed by dividing the silicone body 240 into the bath 250 of the solution 251.
  • FIG. 14 shows a schematic sectional side view of a plurality of second optoelectronic components 200.
  • the second opto-electronic devices 200 are formed from the space formed by dicing the silicon body 240 and Porterrah ⁇ mens 210 parts after detachment from the carrier film 271st
  • the second optoelectronic components 200 may, for example, be light-emitting diode components.
  • the upper sides 241 and side surfaces 242 of the silicon body 240 of the second opto-electronic components 200 have the coating 260, the surface 261 has only a ge ⁇ rings tackiness.
  • the second optoelectronic components 200 there is only a slight risk of adhesion of dirt. Also, there is little danger that two of the optoelectronic devices 200 adhere to each other. As a result, the second optoelectronic components 200 are easy to handle.

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Led Device Packages (AREA)

Abstract

L'invention concerne un élément optoélectronique et un procédé aux fins de sa fabrication. Un élément optoélectronique (100, 200) comporte un corps en silicone (140, 240), dans lequel une puce à semi-conducteurs (120, 220) optoélectronique est intégrée. Le corps en silicone comporte en revêtement en PTFE (160, 260).
PCT/EP2015/054907 2014-03-10 2015-03-10 Élément optoélectronique et procédé de fabrication dudit élément optoélectronique WO2015135908A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102014103133.4 2014-03-10
DE102014103133.4A DE102014103133A1 (de) 2014-03-10 2014-03-10 Optoelektronisches Bauelement und Verfahren zu seiner Herstellung

Publications (1)

Publication Number Publication Date
WO2015135908A1 true WO2015135908A1 (fr) 2015-09-17

Family

ID=52682690

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2015/054907 WO2015135908A1 (fr) 2014-03-10 2015-03-10 Élément optoélectronique et procédé de fabrication dudit élément optoélectronique

Country Status (2)

Country Link
DE (1) DE102014103133A1 (fr)
WO (1) WO2015135908A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI789740B (zh) * 2021-04-13 2023-01-11 光感動股份有限公司 發光二極體封裝結構及發光二極體封裝結構製造方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110284885A1 (en) * 2010-08-06 2011-11-24 Lg Innotek Co., Ltd. Light emittig device package and image display apparatus including the same
DE102011113428A1 (de) * 2011-09-14 2013-03-14 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
US20130299852A1 (en) * 2012-05-14 2013-11-14 Shin-Etsu Chemical Co., Ltd. Substrate for optical semiconductor apparatus, method for manufacturing the same, optical semiconductor apparatus, and method for manufacturing the same
EP2704215A2 (fr) * 2011-04-28 2014-03-05 Kookmin University Industry Academy Cooperation Foundation Del ultrapetite et procédé de fabrication de ladite del

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE793561A (fr) * 1971-12-30 1973-04-16 Western Electric Co Dispositif d'affichage electroluminescent
DE10220583B4 (de) * 2002-03-27 2007-07-05 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
DE102010043378A1 (de) * 2010-11-04 2012-05-10 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110284885A1 (en) * 2010-08-06 2011-11-24 Lg Innotek Co., Ltd. Light emittig device package and image display apparatus including the same
EP2704215A2 (fr) * 2011-04-28 2014-03-05 Kookmin University Industry Academy Cooperation Foundation Del ultrapetite et procédé de fabrication de ladite del
DE102011113428A1 (de) * 2011-09-14 2013-03-14 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
US20130299852A1 (en) * 2012-05-14 2013-11-14 Shin-Etsu Chemical Co., Ltd. Substrate for optical semiconductor apparatus, method for manufacturing the same, optical semiconductor apparatus, and method for manufacturing the same

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
ANONYMOUS: "Polytetrafluoroethylene - Wikipedia, the free encyclopedia", 25 February 2014 (2014-02-25), XP055191152, Retrieved from the Internet <URL:http://en.wikipedia.org/w/index.php?title=Polytetrafluoroethylene&oldid=597050785> [retrieved on 20150522] *

Also Published As

Publication number Publication date
DE102014103133A1 (de) 2015-09-10

Similar Documents

Publication Publication Date Title
EP2462633B1 (fr) Procédé de fabrication d&#39;un composant semiconducteur optoélectronique et composant semiconducteur optoélectronique
DE102012109905B4 (de) Verfahren zur Herstellung einer Vielzahl von optoelektronischen Halbleiterbauteilen
DE102012213343B4 (de) VERFAHREN ZUM HERSTELLEN EINES OPTOELEKTRONISCHES HALBLEITERBAUTEILs MIT SAPHIR-FLIP-CHIP
DE102015114849A1 (de) Verfahren zur Herstellung von Leuchtdiodenfilamenten und Leuchtdiodenfilament
DE102012002605B4 (de) Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils und optoelektronisches Halbleiterbauteil
WO2012160107A2 (fr) Élément optique, composant optoélectronique et procédé de fabrication de ceux-ci
DE102012113003A1 (de) Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils und optoelektronisches Halbleiterbauteil
DE102014101492A1 (de) Optoelektronisches Halbleiterbauelement
DE102014102184A1 (de) Herstellung eines optoelektronischen Bauelements
WO2015110460A1 (fr) Procédé de fabrication d&#39;une pluralité de composants semi-conducteurs optoélectroniques et composant semi-conducteurs optoélectroniques
DE102016118990A1 (de) Sensor
EP2486604B1 (fr) Mise en contact d&#39;un composant semi-conducteur optoélectronique par un élément de conversion
WO2017178332A1 (fr) Composant muni d&#39;un réflecteur et procédé de fabrication de composants
DE102011083691A1 (de) Optoelektronisches halbleiterbauteil
DE102015101070A1 (de) Optoelektronisches Halbleiterbauteil, optoelektronische Anordnung und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils
WO2015078857A1 (fr) Procédé pour la fabrication d&#39;un élément semi-conducteur optoélectronique ainsi qu&#39;élément semi-conducteur optoélectronique et disposition optoélectronique
DE102016108931A1 (de) Optoelektronisches Bauteil und Verfahren zur Herstellung eines optoelektronischen Bauteils
WO2015135908A1 (fr) Élément optoélectronique et procédé de fabrication dudit élément optoélectronique
WO2017129697A1 (fr) Composant optoélectronique à contacts latéraux
EP2474049A1 (fr) Module optoélectronique présentant au moins un premier corps semi-conducteur comportant un côté sortie du rayonnement et une couche isolante, et procédé de fabrication dudit module
DE102014116080A1 (de) Optoelektronisches Bauelement und Verfahren zu seiner Herstellung
WO2019121020A1 (fr) Procédé de production d&#39;un élément de conversion, et élément de conversion
DE112016000659B4 (de) Verfahren zur Herstellung einer organischen Leuchtdiode und organische Leuchtdiode
WO2021073974A1 (fr) Procédé de production d&#39;une pluralité d&#39;éléments semi-conducteurs, élément semi-conducteur et composant semi-conducteur comportant un tel élément semi-conducteur
DE102019106546A1 (de) Verfahren zur herstellung von optoelektronischen halbleiterbauteilen und optoelektronisches halbleiterbauteil

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 15709885

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 15709885

Country of ref document: EP

Kind code of ref document: A1