WO2015127577A1 - Method for filling, on wafer, chip-level atomic clock absorption bubbles with high-purity alkali metal - Google Patents
Method for filling, on wafer, chip-level atomic clock absorption bubbles with high-purity alkali metal Download PDFInfo
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- WO2015127577A1 WO2015127577A1 PCT/CN2014/000816 CN2014000816W WO2015127577A1 WO 2015127577 A1 WO2015127577 A1 WO 2015127577A1 CN 2014000816 W CN2014000816 W CN 2014000816W WO 2015127577 A1 WO2015127577 A1 WO 2015127577A1
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- G04F5/14—Apparatus for producing preselected time intervals for use as timing standards using atomic clocks
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- the invention relates to a high-purity alkali metal filling method for realizing chip-level atomic clock absorption bubbles in a sheet.
- An atomic clock is a tool that achieves accurate timing by the frequency of transition radiation between the hyperfine levels of the atomic ground state.
- the micro-atomic clock based on CPT (Coherent Population Trapping) phenomenon is an inevitable trend in the development of atomic clock miniaturization, and the miniaturization of the core chip alkali metal vapor chamber plays a key role in the miniaturization of the atomic clock.
- the filling process of alkali metal in the micro-absorption bubble is mainly divided into two types: the first method
- the soda metal ( ⁇ or ⁇ ) is directly injected into the absorption bubble.
- This method requires complicated large-scale vacuum process equipment and a strict vacuum environment. The trace amount of oxygen remaining in the cavity will oxidize the alkali metal and reduce the service life of the atomic clock.
- the two methods are to directly inject the alkali metal compound into the absorption bubble chamber and generate the corresponding alkali metal by chemical reaction. This method requires strict control of the amount of the compound injected into the bubble body, and the residual impurities in the reaction will remain in the absorption bubble and affect the atomic clock. performance.
- the common disadvantage of the above two methods is that each absorption bubble needs to be filled one by one, and it is difficult to achieve mass production.
- the invention provides a high-purity alkali metal filling method for realizing a chip-level atomic clock absorption bubble in a sheet, and the object thereof aims to overcome the difficulty caused by the alkali metal being easily oxidized in the process of making the atomic clock absorption bubble in the prior art.
- the invention realizes the simultaneous filling of all the absorption bubbles on the wafer by the method of wafer level filling and partial reaction, and satisfies the requirements of mass production of the atomic clock, and has the characteristics of low cost and high efficiency.
- the technical solution of the present invention is a high-purity alkali metal filling method for realizing a chip-level atomic clock absorption bubble in a sheet, characterized in that the method comprises the following process steps:
- the gaseous alkali metal is solidified and condensed in the absorption bubble chamber by local cooling of the absorption bubble chamber;
- the three-layer wafer-level anodic bonding process is used twice to bend the glass sheet under the action of electrostatic force, eliminating prefabricated flow temporary microchannels, and simultaneously sealing all the absorption bubbles.
- the invention has the advantages that the process is simple, and the mass production of the atomic clock alkali metal absorption bubble can be realized quickly and at low cost.
- 1a is a schematic view showing the formation of microgrooves 102, an alkali metal placement chamber 103, and an absorption bubble chamber 104 on a double-sided polished silicon wafer 101 using a MEMS ICP etching technique.
- Figure 1b is a schematic illustration of the formation of a flow temporary microchannel 108, an absorption bubble chamber 104 and an alkali metal placement chamber 103 using a three layer wafer level anodic bonding process.
- Figure 1c is a method of decomposing an alkali metal compound to produce a gaseous alkali metal by adjusting the temperature of the alkali metal placing chamber 103, passing through a prefabricated flow temporary microchannel, and solidifying and condensing the gaseous alkali metal in the absorption bubble chamber by local cooling of the absorption bubble chamber.
- Figure 1d is a schematic representation of all alkali metal absorption bubble chamber seals.
- Figure 2 is a schematic diagram of a single atomic clock alkali metal absorption bubble.
- 101 is a double-sided polished silicon wafer, 102 is a shallow micro-groove, 103 is an alkali metal compound placement cavity, 104 is an alkali metal absorption bubble cavity, 105 is an A glass plate, 106 is an alkali metal compound, and 107 is B glass sheet, 108 is a flow temporary microchannel, 109 is an alkali metal vapor, 110 is a local cooling device, 111 is a high purity solid alkali metal, 201 is a high purity alkali metal, 202 is a siliceous metal absorption bubble chamber, 203 is The upper glass, 204 is the lower glass.
- a high-purity alkali metal filling method for realizing a chip-level atomic clock absorption bubble in a sheet characterized in that the method comprises the following process steps:
- the gaseous alkali metal is solidified and condensed in the absorption bubble chamber by local cooling of the absorption bubble chamber;
- the three-layer wafer-level anodic bonding process is used twice to bend the glass sheet under the action of electrostatic force, eliminating prefabricated flow temporary microchannels, and simultaneously sealing all the absorption bubbles.
- the glass-silicon-glass three-layer wafer-level anodic bonding process is carried out in two steps, the first step forms a temporary microchannel for the flow of alkali metal vapor, and the second step is again bonded to achieve the sealing of the alkali metal compound. .
- the alkali metal compound in the chamber is chemically reacted by separately adjusting the temperature of the chamber to be decomposed to produce a high-purity alkali metal, and the strength of the decomposition reaction can be controlled by the temperature of the alkali metal placement chamber.
- the flow channel of the alkali metal vapor is an alkali metal vapor flowing through the silicon-glass flow temporary microchannel, diffusing into the absorption bubble, and condensing into the absorption bubble by local cooling.
- the silicon wafer with the flow temporary microchannel is re-bonded with the glass sheet, and the glass sheet is bent under the action of electrostatic force by increasing the pressure or voltage during the bonding process, thereby eliminating the prefabricated temporary microchannel and realizing all
- the alkali metal absorbs the seal of the bubble chamber.
- a shallow micro groove 102 having a depth of 1 to 2 ⁇ m and a diameter of 80 to 90 mm is drawn downward on one side of the 4-inch double-sided polished silicon wafer 101, and an alkali metal compound placement chamber 103 having a diameter of 20 mm is engraved in the middle of the double-sided polished silicon wafer 101.
- a portion of the 2 mm square alkali metal absorption bubble cavity 104 is engraved on a portion of the double micro-polishing wafer 101 in the range of the shallow micro-grooves 102; the metal compound placement cavity 103 and the alkali metal absorption bubble 104 are both through-hole structures.
- the silicon wafer 101 is polished through the double side; as shown in FIG. 1a.
- the side of the double-sided polished silicon wafer 101 without the shallow microgrooves 102 is bonded to the A glass sheet 105 using a silicon-glass wafer-level anodic bonding; a calculated dose of the alkali metal compound 106 is placed In the alkali metal compound cavity 103, one side of the double-sided polished silicon wafer 101 with the shallow micro-grooves 102 is pre-bonded with the B glass sheet 107 by means of silicon-glass wafer-level anodic bonding; shallow dimples
- the groove 102 and the B glass sheet 107 together form a microfluidic channel of alkali metal vapor to form a small vacuum environment, as shown in Figure 1b.
- the temperature of the alkali metal compound placement chamber 103 is individually adjusted by the reaction device 106 to decompose the alkali metal compound 106 to precipitate the alkali metal vapor 109; the alkali metal vapor 109 is diffused through the flow temporary microchannel 108 to include the alkali metal absorption bubble chamber 104.
- the entire cavity; the local cooling means 110 can adjust the temperature of the portion of the double-sided polished silicon wafer 101 outside the metal compound placement cavity 103, and the alkali metal vapor 109 solidifies at the bottom of the alkali metal absorption bubble cavity 104 to be filled in the alkali metal absorption.
- the high purity solid alkali metal 111 in the bubble chamber 104 is as shown in Figure 1c.
- the double-sided polished silicon wafer 101 and the glass sheet 107 are re-bonded by means of silicon-glass wafer-level anodic bonding, and the pressure is increased (1800 mbar to 2000 mbar) or voltage (-800 V to -1000 V) during bonding.
- the glass sheet 107 is bent under the action of electrostatic force, eliminating the prefabricated flow temporary microchannels 108, achieving sealing of all of the alkali metal absorption bubble chambers 104, as shown in Figure 1d.
- the atomic clock metal absorption bubbles fabricated in the wafer level process illustrated in Figures 1a-1d can be diced into individual atomic clock alkali metal absorption bubbles by dicing.
- the high-purity alkali metal 201 in FIG. 2 is placed in the siliceous alkali absorption bubble chamber 202 and sealed by the upper glass 203 and the lower glass 204.
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Abstract
A method for filling, on a wafer, chip-level atomic clock absorption bubbles with a high-purity alkali metal. The method comprises: 1) forming a micro groove (102), an absorption bubble cavity groove and an accommodation cavity groove in a silicon wafer (101); 2) sealing an alkali metal compound (106) in an accommodation cavity (103) in the center of the wafer, and forming a vacuum environment in the wafer comprising a temporary flowing micro channel, an absorption bubble cavity and the alkali metal accommodation cavity (103); 3) implementing decomposition of the alkali metal compound to generate a rubidium or cesium metal in a needed amount, and vaporizing and volatilizing the metal; 4) solidifying and coagulating the gaseous alkali metal in the absorption bubble cavity (104); and 5) bending a glass sheet under the action of electrostatic force, eliminating the precast temporary flowing micro channel (108), and simultaneously sealing all absorption bubbles. By means of the method, the problems of high filling difficulty, complex process and the like caused by extremely high probability of oxidization of an alkali metal are solved, reaction impurities probably left in the absorption bubbles are eliminated, and all the absorption bubbles on the alkali metal wafer are filled at a time, and the method can be used for mass production of chip-level atomic clock bubbles.
Description
本发明涉及的是一种在片实现芯片级原子钟吸收泡的高纯度碱金属填充方法。The invention relates to a high-purity alkali metal filling method for realizing chip-level atomic clock absorption bubbles in a sheet.
人类的日常生活、科研、导航及测绘等等工作都离不开时间。时间的计量涉及两个量——历元和时间间隔。任何具有周期性变化规律的自然现象都可以用来测量时间。3500年来，随着人类的不断进步，计时的工具也在不断的发展，人类对于计时的精度要求也越来越高，人类的计时仪器从利用地球自传的周期变化规律来发明日冕以确定时间的变化，到后来出现的沙漏计时、水运仪象台、机械摆钟、石英钟、原子钟以至光钟等等，无不可以看出都是以具有周期变化规律的自然现象来测量时间的。Human life, research, navigation and mapping are all inseparable from time. The measurement of time involves two quantities - epochs and time intervals. Any natural phenomenon with periodic variations can be used to measure time. In the past 3,500 years, with the continuous advancement of human beings, the tools of timing have been continuously developed, and the accuracy requirements of human timing are getting higher and higher. Human timing instruments invented the sundial from the use of the periodic changes of the autobiography of the earth to determine the time. Changes, to the later hourglass timing, water transport instrument platform, mechanical pendulum clock, quartz clock, atomic clock and even the light clock, etc., can be seen to measure time with natural phenomena with periodic changes.
原子钟作为现在最为精确的计时工具之一，从最先的上世纪30年代理论提出，到实物的出现，逐渐的在国防、科研领域得到越来越多的应用。近年来，用MEMS(Micro-Electro-Mechanical Systems)技术制作的芯片级微型原子钟已经开始发展，这将突破接收者时钟的性能，更加广泛的应用到各种计时频标中，将对社会产生革命性的影响。As one of the most accurate timing tools, the atomic clock has been increasingly applied in the fields of national defense and scientific research from the first theory of the 1930s to the emergence of physical objects. In recent years, chip-scale micro-atomic clocks made with MEMS (Micro-Electro-Mechanical Systems) technology have begun to develop, which will break through the performance of the receiver clock and be more widely applied to various timing frequency standards, which will revolutionize society. Sexual influence.
原子钟是通过原子基态的超精细能级间的跃迁辐射频率来实现精确计时的工具。基于CPT(Coherent Population Trapping)现象的微型原子钟是原子钟微型化发展的必然趋势，而其中的核心芯片碱金属蒸汽腔的微型化制造对原子钟的微型化起着关键性的作用。An atomic clock is a tool that achieves accurate timing by the frequency of transition radiation between the hyperfine levels of the atomic ground state. The micro-atomic clock based on CPT (Coherent Population Trapping) phenomenon is an inevitable trend in the development of atomic clock miniaturization, and the miniaturization of the core chip alkali metal vapor chamber plays a key role in the miniaturization of the atomic clock.
目前，微型吸收泡中碱金属的填充工艺手段主要分为两种：第一种方法
是把纯碱金属(铷或铯)直接注入吸收泡，这种方法需要复杂的大型真空工艺设备和严格的真空环境，腔体中残留的微量氧气会使碱金属氧化从而降低原子钟的使用寿命；第二种方法是把碱金属化合物直接注入吸收泡腔，通过化学反应产生相应的碱金属，这种方法需要严格控制注入泡体的化合物量，同时反应残留的杂质会留在吸收泡中影响原子钟的性能。此外，上述两种方法的共同缺点在于每个吸收泡需逐一填充，难以实现批量化生产。At present, the filling process of alkali metal in the micro-absorption bubble is mainly divided into two types: the first method
The soda metal (铷 or 铯) is directly injected into the absorption bubble. This method requires complicated large-scale vacuum process equipment and a strict vacuum environment. The trace amount of oxygen remaining in the cavity will oxidize the alkali metal and reduce the service life of the atomic clock. The two methods are to directly inject the alkali metal compound into the absorption bubble chamber and generate the corresponding alkali metal by chemical reaction. This method requires strict control of the amount of the compound injected into the bubble body, and the residual impurities in the reaction will remain in the absorption bubble and affect the atomic clock. performance. In addition, the common disadvantage of the above two methods is that each absorption bubble needs to be filled one by one, and it is difficult to achieve mass production.
发明内容Summary of the invention
本发明提出一种在片实现芯片级原子钟吸收泡的高纯度碱金属填充方法，其目的旨在克服现有技术制作原子钟吸收泡过程中由于碱金属极易氧化而导致的困难。本发明通过圆片级填充和局部反应的方法，实现同时填充晶圆上所有吸收泡，满足原子钟批量化生产的要求，具有成本低效率高等特点。The invention provides a high-purity alkali metal filling method for realizing a chip-level atomic clock absorption bubble in a sheet, and the object thereof aims to overcome the difficulty caused by the alkali metal being easily oxidized in the process of making the atomic clock absorption bubble in the prior art. The invention realizes the simultaneous filling of all the absorption bubbles on the wafer by the method of wafer level filling and partial reaction, and satisfies the requirements of mass production of the atomic clock, and has the characteristics of low cost and high efficiency.
本发明的技术解决方案：一种在片实现芯片级原子钟吸收泡的高纯度碱金属填充方法，其特征在于，该方法包括以下工艺步骤：The technical solution of the present invention is a high-purity alkali metal filling method for realizing a chip-level atomic clock absorption bubble in a sheet, characterized in that the method comprises the following process steps:
1)利用MEMS ICP刻蚀技术，在硅圆片上形成微凹槽、吸收泡腔槽和放置腔槽；1) using MEMS ICP etching technology to form micro-grooves on the silicon wafer, absorb the bubble chamber and place the cavity;
2)利用三层圆片级阳极键合工艺，形成预制的流动临时微通道、吸收泡腔和放置腔，并将碱金属化合物密封入圆片中央的放置腔内；2) using a three-layer wafer-level anodic bonding process to form a prefabricated flow temporary microchannel, an absorption bubble chamber and a placement chamber, and sealing the alkali metal compound into the placement chamber in the center of the wafer;
3)通过单独调节放置腔的温度来控制碱金属化合物化学反应的强度，实现碱金属化合物的分解，生成所需量的铷或铯金属，并使之汽化挥发；3) controlling the intensity of the chemical reaction of the alkali metal compound by separately adjusting the temperature of the chamber, realizing the decomposition of the alkali metal compound, generating a desired amount of ruthenium or ruthenium metal, and vaporizing and volatilizing;
4)经过预制的流动临时微通道，利用对吸收泡腔局部冷却将气态碱金属固化凝结在吸收泡腔体中；4) through the prefabricated flow temporary microchannel, the gaseous alkali metal is solidified and condensed in the absorption bubble chamber by local cooling of the absorption bubble chamber;
5)二次利用三层圆片级阳极键合工艺，使玻璃片在静电力的作用下，发生弯曲，消除预制的流动临时微通道，实现所有吸收泡的同时密封。
5) The three-layer wafer-level anodic bonding process is used twice to bend the glass sheet under the action of electrostatic force, eliminating prefabricated flow temporary microchannels, and simultaneously sealing all the absorption bubbles.
本发明的优点：工艺简单，能够快速低成本的实现原子钟碱金属吸收泡的大规模生产。The invention has the advantages that the process is simple, and the mass production of the atomic clock alkali metal absorption bubble can be realized quickly and at low cost.
图1a是利用MEMS ICP刻蚀技术，在双面抛光硅片101上形成微凹槽102、碱金属放置腔槽103和吸收泡腔槽104的示意图。1a is a schematic view showing the formation of microgrooves 102, an alkali metal placement chamber 103, and an absorption bubble chamber 104 on a double-sided polished silicon wafer 101 using a MEMS ICP etching technique.
图1b是利用三层圆片级阳极键合工艺，形成流动临时微通道108、吸收泡腔槽104和碱金属放置腔槽103的示意图。Figure 1b is a schematic illustration of the formation of a flow temporary microchannel 108, an absorption bubble chamber 104 and an alkali metal placement chamber 103 using a three layer wafer level anodic bonding process.
图1c是通过调节碱金属放置腔103的温度使碱金属化合物分解产生气态碱金属，经过预制的流动临时微通道，并对吸收泡腔局部冷却将气态碱金属固化凝结在吸收泡腔体中的示意图。Figure 1c is a method of decomposing an alkali metal compound to produce a gaseous alkali metal by adjusting the temperature of the alkali metal placing chamber 103, passing through a prefabricated flow temporary microchannel, and solidifying and condensing the gaseous alkali metal in the absorption bubble chamber by local cooling of the absorption bubble chamber. schematic diagram.
图1d是实现所有碱金属吸收泡腔体密封的示意图。Figure 1d is a schematic representation of all alkali metal absorption bubble chamber seals.
图2是单个原子钟碱金属吸收泡示意图。Figure 2 is a schematic diagram of a single atomic clock alkali metal absorption bubble.
图中的101是双面抛光硅片、102是浅微凹槽、103是碱金属化合物放置腔体、104是碱金属吸收泡腔体、105是A玻璃片、106是碱金属化合物、107是B玻璃片、108是流动临时微通道、109是碱金属蒸汽、110是局部冷却装置、111是高纯度固态碱金属、201是高纯度碱金属、202是硅碱金属吸收泡腔体、203是上层玻璃、204是下层玻璃。101 is a double-sided polished silicon wafer, 102 is a shallow micro-groove, 103 is an alkali metal compound placement cavity, 104 is an alkali metal absorption bubble cavity, 105 is an A glass plate, 106 is an alkali metal compound, and 107 is B glass sheet, 108 is a flow temporary microchannel, 109 is an alkali metal vapor, 110 is a local cooling device, 111 is a high purity solid alkali metal, 201 is a high purity alkali metal, 202 is a siliceous metal absorption bubble chamber, 203 is The upper glass, 204 is the lower glass.
在片实现芯片级原子钟吸收泡的高纯度碱金属填充方法，其特征在于，该方法包括以下工艺步骤：A high-purity alkali metal filling method for realizing a chip-level atomic clock absorption bubble in a sheet, characterized in that the method comprises the following process steps:
1)利用MEMS ICP刻蚀技术，在硅圆片上形成微凹槽、吸收泡腔槽和放置腔槽；1) using MEMS ICP etching technology to form micro-grooves on the silicon wafer, absorb the bubble chamber and place the cavity;
2)利用三层圆片级阳极键合工艺，形成预制的流动临时微通道、吸收
泡腔和放置腔，并将碱金属化合物密封入圆片中央的放置腔内；2) Using a three-layer wafer-level anodic bonding process to form prefabricated flow temporary microchannels, absorption
Caving the cavity and placing the cavity, and sealing the alkali metal compound into the placement cavity in the center of the wafer;
3)通过单独调节放置腔的温度来控制碱金属化合物化学反应的强度，实现碱金属化合物的分解，生成所需量的铷或铯金属，并使之汽化挥发；3) controlling the intensity of the chemical reaction of the alkali metal compound by separately adjusting the temperature of the chamber, realizing the decomposition of the alkali metal compound, generating a desired amount of ruthenium or ruthenium metal, and vaporizing and volatilizing;
4)经过预制的流动临时微通道，利用对吸收泡腔局部冷却将气态碱金属固化凝结在吸收泡腔体中；4) through the prefabricated flow temporary microchannel, the gaseous alkali metal is solidified and condensed in the absorption bubble chamber by local cooling of the absorption bubble chamber;
5)二次利用三层圆片级阳极键合工艺，使玻璃片在静电力的作用下，发生弯曲，消除预制的流动临时微通道，实现所有吸收泡的同时密封。所述的利用玻璃-硅-玻璃三层圆片级阳极键合工艺，分两步实施，第一步形成碱金属蒸汽的流动临时微通道，第二步再次键合实现对碱金属化合物的密封。5) The three-layer wafer-level anodic bonding process is used twice to bend the glass sheet under the action of electrostatic force, eliminating prefabricated flow temporary microchannels, and simultaneously sealing all the absorption bubbles. The glass-silicon-glass three-layer wafer-level anodic bonding process is carried out in two steps, the first step forms a temporary microchannel for the flow of alkali metal vapor, and the second step is again bonded to achieve the sealing of the alkali metal compound. .
通过单独调节放置腔的温度使腔内的碱金属化合物发生化学反应，分解产生高纯度碱金属，分解反应的强度可通过碱金属放置腔体温度控制。The alkali metal compound in the chamber is chemically reacted by separately adjusting the temperature of the chamber to be decomposed to produce a high-purity alkali metal, and the strength of the decomposition reaction can be controlled by the temperature of the alkali metal placement chamber.
所述的碱金属蒸汽的流动通道是碱金属蒸汽通过硅-玻璃流动临时微通道，扩散入吸收泡中，并通过局部冷却作用，凝结于吸收泡中。The flow channel of the alkali metal vapor is an alkali metal vapor flowing through the silicon-glass flow temporary microchannel, diffusing into the absorption bubble, and condensing into the absorption bubble by local cooling.
将带有流动临时微通道的硅片与玻璃片再次键合，键合过程中通过增加压力或电压的方式，使玻璃片在静电力的作用下发生弯曲，消除预制的临时微通道，实现所有碱金属吸收泡腔体的密封。The silicon wafer with the flow temporary microchannel is re-bonded with the glass sheet, and the glass sheet is bent under the action of electrostatic force by increasing the pressure or voltage during the bonding process, thereby eliminating the prefabricated temporary microchannel and realizing all The alkali metal absorbs the seal of the bubble chamber.
实施例Example
在4寸双面抛光硅片101的一面向下刻出深度1～2μm直径80～90mm的浅微凹槽102，在双面抛光硅片101中部刻出直径20mm的碱金属化合物放置腔体103；在双面抛光硅片101上的浅微凹槽102范围内的部分刻出2mm见方的碱金属吸收泡腔体104阵列；金属化合物放置腔体103和碱金属吸收泡104均为通孔结构，贯穿双面抛光硅片101；如图1a所示。
A shallow micro groove 102 having a depth of 1 to 2 μm and a diameter of 80 to 90 mm is drawn downward on one side of the 4-inch double-sided polished silicon wafer 101, and an alkali metal compound placement chamber 103 having a diameter of 20 mm is engraved in the middle of the double-sided polished silicon wafer 101. A portion of the 2 mm square alkali metal absorption bubble cavity 104 is engraved on a portion of the double micro-polishing wafer 101 in the range of the shallow micro-grooves 102; the metal compound placement cavity 103 and the alkali metal absorption bubble 104 are both through-hole structures. , the silicon wafer 101 is polished through the double side; as shown in FIG. 1a.
使用硅-玻璃圆片级阳极键合的方式，将双面抛光硅片101不带浅微凹槽102的一面与A玻璃片105键合在一起；将计算好剂量的碱金属化合物106放置在碱金属化合物腔体103中，使用硅-玻璃圆片级阳极键合的方式，将双面抛光硅片101带浅微凹槽102的一面与B玻璃片107预键合在一起；浅微凹槽102与B玻璃片107共同形成了碱金属蒸汽的微流动通道，形成小真空环境，如图1b所示。The side of the double-sided polished silicon wafer 101 without the shallow microgrooves 102 is bonded to the A glass sheet 105 using a silicon-glass wafer-level anodic bonding; a calculated dose of the alkali metal compound 106 is placed In the alkali metal compound cavity 103, one side of the double-sided polished silicon wafer 101 with the shallow micro-grooves 102 is pre-bonded with the B glass sheet 107 by means of silicon-glass wafer-level anodic bonding; shallow dimples The groove 102 and the B glass sheet 107 together form a microfluidic channel of alkali metal vapor to form a small vacuum environment, as shown in Figure 1b.
通过反应装置106单独调节碱金属化合物放置腔体103的温度，使碱金属化合物106分解，析出碱金属蒸汽109；碱金属蒸汽109通过流动临时微通道108扩散至包括碱金属吸收泡腔体104在内的整个腔体；局部冷却手段110可以调节双面抛光硅片101上金属化合物放置腔体103以外部分的温度，碱金属蒸汽109在碱金属吸收泡腔体104底部固化成为填充在碱金属吸收泡腔体104中的高纯度固态碱金属111，如图1c所示。The temperature of the alkali metal compound placement chamber 103 is individually adjusted by the reaction device 106 to decompose the alkali metal compound 106 to precipitate the alkali metal vapor 109; the alkali metal vapor 109 is diffused through the flow temporary microchannel 108 to include the alkali metal absorption bubble chamber 104. The entire cavity; the local cooling means 110 can adjust the temperature of the portion of the double-sided polished silicon wafer 101 outside the metal compound placement cavity 103, and the alkali metal vapor 109 solidifies at the bottom of the alkali metal absorption bubble cavity 104 to be filled in the alkali metal absorption. The high purity solid alkali metal 111 in the bubble chamber 104 is as shown in Figure 1c.
使用硅-玻璃圆片级阳极键合的方式，将双面抛光硅片101与玻璃片107再次键合，键合过程中通过增加压力(1800mbar～2000mbar)或电压(-800V～-1000V)等方式，使玻璃片107在静电力的作用下发生弯曲，消除预制的流动临时微通道108，实现所有碱金属吸收泡腔体104的密封，如图1d所示。在图1a-图1d所示圆片级工艺制作的原子钟金属吸收泡可通过划片的方式切割成单个原子钟碱金属吸收泡。图2中高纯度碱金属201被放置在硅碱金属吸收泡腔体202中，通过上玻璃203、下玻璃204密封。
The double-sided polished silicon wafer 101 and the glass sheet 107 are re-bonded by means of silicon-glass wafer-level anodic bonding, and the pressure is increased (1800 mbar to 2000 mbar) or voltage (-800 V to -1000 V) during bonding. In a manner, the glass sheet 107 is bent under the action of electrostatic force, eliminating the prefabricated flow temporary microchannels 108, achieving sealing of all of the alkali metal absorption bubble chambers 104, as shown in Figure 1d. The atomic clock metal absorption bubbles fabricated in the wafer level process illustrated in Figures 1a-1d can be diced into individual atomic clock alkali metal absorption bubbles by dicing. The high-purity alkali metal 201 in FIG. 2 is placed in the siliceous alkali absorption bubble chamber 202 and sealed by the upper glass 203 and the lower glass 204.
Claims (5)
- 一种在片实现芯片级原子钟吸收泡的高纯度碱金属填充方法，其特征在于，该方法包括以下工艺步骤：A high-purity alkali metal filling method for realizing a chip-level atomic clock absorption bubble in a sheet, characterized in that the method comprises the following process steps:1)利用MEMS ICP刻蚀技术，在硅圆片上形成微凹槽、吸收泡腔槽和放置腔槽；1) using MEMS ICP etching technology to form micro-grooves on the silicon wafer, absorb the bubble chamber and place the cavity;2)利用三层圆片级阳极键合工艺，形成预制的流动临时微通道、吸收泡腔和放置腔，并将碱金属化合物密封入圆片中央的放置腔内；2) using a three-layer wafer-level anodic bonding process to form a prefabricated flow temporary microchannel, an absorption bubble chamber and a placement chamber, and sealing the alkali metal compound into the placement chamber in the center of the wafer;3)通过单独调节放置腔的温度来控制碱金属化合物化学反应的强度，实现碱金属化合物的分解，生成所需量的铷或铯金属，并使之汽化挥发；3) controlling the intensity of the chemical reaction of the alkali metal compound by separately adjusting the temperature of the chamber, realizing the decomposition of the alkali metal compound, generating a desired amount of ruthenium or ruthenium metal, and vaporizing and volatilizing;4)经过预制的流动临时微通道，利用对吸收泡腔局部冷却将气态碱金属固化凝结在吸收泡腔体中；4) through the prefabricated flow temporary microchannel, the gaseous alkali metal is solidified and condensed in the absorption bubble chamber by local cooling of the absorption bubble chamber;5)二次利用三层圆片级阳极键合工艺，使玻璃片在静电力的作用下，发生弯曲，消除预制的流动临时微通道，实现所有吸收泡的同时密封。5) The three-layer wafer-level anodic bonding process is used twice to bend the glass sheet under the action of electrostatic force, eliminating prefabricated flow temporary microchannels, and simultaneously sealing all the absorption bubbles.
- 根据权利要求1所述的一种在片实现芯片级原子钟吸收泡的高纯度碱金属填充方法，其特征在于所述的利用玻璃-硅-玻璃三层圆片级阳极键合工艺，分两步实施，第一步形成碱金属蒸汽的流动临时微通道，第二步再次键合实现对碱金属化合物的密封。The high-purity alkali metal filling method for realizing a chip-level atomic clock absorption bubble in a sheet according to claim 1, wherein the glass-silicon-glass three-layer wafer-level anodic bonding process is divided into two steps. In practice, the first step forms a temporary microchannel for the flow of alkali metal vapor, and the second step is again bonded to achieve the sealing of the alkali metal compound.
- 根据权利要求1所述的一种在片实现芯片级原子钟吸收泡的高纯度碱金属填充方法，其特征在于所述的通过单独调节放置腔的温度使腔内的碱金属化合物发生化学反应，分解产生高纯度碱金属，分解反应的强度可通过碱金属放置腔体温度控制。A high-purity alkali metal filling method for realizing a chip-level atomic clock absorption bubble in a sheet according to claim 1, wherein the alkali metal compound in the chamber is chemically reacted and decomposed by separately adjusting the temperature of the chamber. Producing a high-purity alkali metal, the strength of the decomposition reaction can be controlled by the alkali metal placement chamber temperature.
- 根据权利要求1所述的一种在片实现芯片级原子钟吸收泡的高纯度碱金属填充方法，其特征在于所述的碱金属蒸汽的流动通道是碱金属蒸汽通 过硅-玻璃流动临时微通道，扩散入吸收泡中，并通过局部冷却作用，凝结于吸收泡中。A high-purity alkali metal filling method for realizing a chip-level atomic clock absorption bubble in a sheet according to claim 1, wherein said alkali metal vapor flow channel is an alkali metal vapor passage The silicon-glass flow temporary microchannel diffuses into the absorption bubble and condenses in the absorption bubble by local cooling.
- 根据权利要求1所述的一种在片实现芯片级原子钟吸收泡的高纯度碱金属填充方法，其特征在于所述的二次圆片级阳极键合工艺，将带有流动临时微通道的硅片与玻璃片再次键合，键合过程中通过增加压力或电压的方式，使玻璃片在静电力的作用下发生弯曲，消除预制的临时微通道，实现所有碱金属吸收泡腔体的密封。 A high-purity alkali metal filling method for realizing a chip-level atomic clock absorption bubble in a sheet according to claim 1, wherein said second wafer-level anodic bonding process comprises silicon with a flow temporary microchannel The sheet is re-bonded with the glass sheet, and the glass sheet is bent under the action of electrostatic force by increasing the pressure or voltage during the bonding process, thereby eliminating the prefabricated temporary microchannel and achieving the sealing of all the alkali metal absorption bubble chambers.
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| EP14884030.9A EP3112315B1 (en) | 2014-02-27 | 2014-09-02 | Method for filling csac absorption cells with high-purity alkali metal |
| KR1020157036179A KR101824789B1 (en) | 2014-02-27 | 2014-09-02 | Method for filling, on wafer, chip-level atomic clock absorption bubbles with high-purity alkali metal |
| PCT/CN2014/000816 WO2015127577A1 (en) | 2014-02-27 | 2014-09-02 | Method for filling, on wafer, chip-level atomic clock absorption bubbles with high-purity alkali metal |
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| PCT/CN2014/000816 WO2015127577A1 (en) | 2014-02-27 | 2014-09-02 | Method for filling, on wafer, chip-level atomic clock absorption bubbles with high-purity alkali metal |
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| CN104609364B (en) * | 2015-01-28 | 2016-05-11 | 中国科学院上海光学精密机械研究所 | Preparation method and the system of high accuracy mixed buffer gas alkali metal atom steam bubble |
| CN107840305B (en) * | 2017-11-13 | 2019-05-10 | 北京无线电计量测试研究所 | A kind of production method of the MEMS Atom-Cavity of chip atomic clock |
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