CN114477074A - Wafer-level atomic gas chamber processing method and device based on MEMS technology - Google Patents
Wafer-level atomic gas chamber processing method and device based on MEMS technology Download PDFInfo
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- CN114477074A CN114477074A CN202111583788.XA CN202111583788A CN114477074A CN 114477074 A CN114477074 A CN 114477074A CN 202111583788 A CN202111583788 A CN 202111583788A CN 114477074 A CN114477074 A CN 114477074A
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- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C3/00—Assembling of devices or systems from individually processed components
- B81C3/001—Bonding of two components
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- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
- B81C1/00087—Holes
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00214—Processes for the simultaneaous manufacturing of a network or an array of similar microstructural devices
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00388—Etch mask forming
- B81C1/00404—Mask characterised by its size, orientation or shape
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00523—Etching material
- B81C1/00531—Dry etching
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
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- B81C99/0005—Apparatus specially adapted for the manufacture or treatment of microstructural devices or systems, or methods for manufacturing the same
Abstract
The invention provides a method and a device for processing a wafer-level atomic gas chamber based on an MEMS (micro-electromechanical system) technology, which comprises the following steps: depositing mask layers on the front side and the back side of the monocrystalline silicon wafer; depositing a glue layer on the mask layers on the front side and the back side, and carrying out photoetching development on the glue layer to form an air chamber pattern; etching the silicon through hole of the monocrystalline silicon wafer after the photoetching development based on the gas chamber pattern; carrying out silicon-glass anodic bonding on the monocrystalline silicon wafer and the glass wafer; filling an alkali metal compound in the air chamber cavity; arranging a second glass wafer on the surface of the opening of the cavity of the air chamber of the first silicon-glass assembly filled with the alkali metal compound, vacuumizing and filling buffer gas, and carrying out silicon-glass anodic bonding on the second silicon-glass assembly; and carrying out reduction reaction on alkali metal atoms in the air chamber cavity of the second silicon-glass assembly after the silicon-glass anode bonding to generate the alkali metal atoms. By applying the technical scheme of the invention, the technical problems of poor atom filling effect and low yield in the prior art are solved.
Description
Technical Field
The invention relates to the technical field of wafer-level air chamber processing, in particular to a wafer-level atomic air chamber processing method and device based on an MEMS (micro-electromechanical system) technology.
Background
The atomic gas cell in a general atomic magnetometer is mainly processed by two schemes: the first method is to process a cubic gas chamber by adopting a glass material optical cement mode, and then fill alkali metal atoms and buffer gas by using special atom filling equipment; the second method is to process the cavity of the gas chamber by using a silicon wafer, and then package and cut the gas chamber after filling the buffer gas of alkali metal atoms by using a glass-silicon-glass three-layer bonding mode.
The two methods have advantages and disadvantages respectively: the glass air chamber processed by the first method has larger volume, but has higher processing difficulty, six glass surfaces are needed to be glued, then alkali metal atoms are separately filled, special equipment is needed in the atom filling process, and the filled air chamber has higher vacuum packaging difficulty and needs to be packaged by adopting a flame melting method; the second method can process the gas chamber in large batch, but the atomic filling method is limited by the compatibility of the bonding equipment and the wafer level packaging process, so the atomic filling effect is not good, the yield is low, and the internal volume of the gas chamber is small.
Disclosure of Invention
The invention provides a wafer-level atomic gas chamber processing method and device based on an MEMS (micro-electromechanical systems) technology, which can solve the technical problems of poor atomic filling effect and low yield in the prior art.
According to an aspect of the present invention, a method for processing a wafer-level atomic gas chamber based on an MEMS technology is provided, which includes: depositing a first mask layer on a first surface of a monocrystalline silicon wafer, and depositing a second mask layer on a second surface of the monocrystalline silicon wafer; depositing a first adhesive layer on the first mask layer, depositing a second adhesive layer on the second mask layer, and respectively carrying out photoetching development on the first adhesive layer and the second adhesive layer to form an air chamber pattern; performing through-silicon-via etching on the single crystal silicon wafer after the photoetching development based on the air chamber pattern, and removing the remaining first mask layer, the second mask layer, the first adhesive layer and the second adhesive layer; carrying out silicon-glass anodic bonding on the second surface of the monocrystalline silicon wafer with the through silicon holes and the glass wafer to form a first silicon-glass assembly with a gas chamber cavity; filling an alkali metal compound in a cavity of a gas chamber of the first silicon-glass assembly, wherein the alkali metal compound comprises a set proportion of rubidium chromate and cesium chromate compounds and a reducing agent or a set proportion of rubidium and cesium nitride and a reducing agent; arranging a second glass wafer on the surface of the opening of the air chamber cavity of the first silicon-glass assembly filled with the alkali metal compound to form a second silicon-glass assembly, vacuumizing the air chamber cavity of the second silicon-glass assembly, filling buffer gas, and carrying out silicon-glass anodic bonding on the second silicon-glass assembly; and carrying out reduction reaction on alkali metal atoms in the air chamber cavity of the second silicon-glass assembly after the silicon-glass anode bonding to generate alkali metal atoms, and finishing the processing of the wafer-level atomic air chamber.
Further, when the alkali metal compound is a rubidium chromate compound and a cesium chromate compound in a set ratio, the step of performing a reduction reaction on the alkali metal atoms in the chamber of the second silicon-glass assembly to generate the alkali metal atoms specifically includes: and transferring the second silicon-glass assembly to a high-temperature annealing furnace for high-temperature annealing so as to enable the alkali metal atoms in the chamber body to generate reduction reaction to generate the alkali metal atoms.
Further, when the alkali metal compound is a set ratio of rubidium nitride and cesium nitride and a reducing agent, the reducing reaction of the alkali metal atoms in the chamber of the second silicon-glass composite body to generate the alkali metal atoms specifically includes: and irradiating the alkali metal atoms in the air chamber cavity of the second silicon-glass assembly with ultraviolet rays to decompose and generate the alkali metal atoms and nitrogen.
Further, the step of performing through-silicon-via etching on the single crystal silicon wafer after the photolithography and development specifically includes: and performing through-silicon-via etching on the single crystal silicon wafer after the photoetching development in a manner of performing deep silicon etching or wet etching on the single crystal silicon wafer after the photoetching development by adopting a dry etching method.
Further, a first mask layer is deposited on the first surface of the monocrystalline silicon wafer in a low-pressure vapor deposition mode, and a second mask layer is deposited on the second surface of the monocrystalline silicon wafer in a low-pressure vapor deposition mode.
Further, the temperature range of the high temperature annealing is 500 ° to 650 °.
According to still another aspect of the present invention, there is provided a wafer-level atomic gas chamber processing device based on MEMS technology, which performs atomic gas chamber processing using the wafer-level atomic gas chamber processing method based on MEMS technology as described above.
The technical scheme of the invention is applied, and provides a wafer-level atomic gas chamber processing method based on MEMS technology, which is based on MEMS (Micro-Electro-Mechanical System) technology, and comprises the steps of carrying out patterning and through hole etching, glass-silicon wafer anode bonding and alkali metal compound filling on the surface of a monocrystalline silicon wafer, and finally carrying out vacuum anode bonding and reduction reaction on the surface of the wafer to generate an alkali metal simple substance, wherein the stability of the alkali metal compound at normal temperature is considered to be higher than that of the alkali metal atom, rubidium chromate and cesium chromate compounds and reducing agents or rubidium and cesium nitride and reducing agents in set proportions are filled in the filling process, and after a second silicon-glass assembly is packaged, the alkali metal atom in a gas chamber cavity of the second silicon-glass assembly is subjected to reduction reaction to generate the alkali metal atom, the method can improve the yield of the atomic gas chamber and ensure the filling effect of the alkali metal atoms.
Drawings
The accompanying drawings, which are included to provide a further understanding of the embodiments of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention. It is obvious that the drawings in the following description are only some embodiments of the invention, and that for a person skilled in the art, other drawings can be derived from them without inventive effort.
Fig. 1 shows a flow chart of a wafer-level atomic gas chamber processing method based on MEMS technology, provided in accordance with an embodiment of the present invention.
Detailed Description
It should be noted that the embodiments and features of the embodiments in the present application may be combined with each other without conflict. The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. The following description of at least one exemplary embodiment is merely illustrative in nature and is in no way intended to limit the invention, its application, or uses. All other embodiments, which can be obtained by a person skilled in the art without inventive step based on the embodiments of the present invention, are within the scope of protection of the present invention.
It is noted that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of example embodiments according to the present application. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, and it should be understood that when the terms "comprises" and/or "comprising" are used in this specification, they specify the presence of stated features, steps, operations, devices, components, and/or combinations thereof, unless the context clearly indicates otherwise.
The relative arrangement of the components and steps, the numerical expressions and numerical values set forth in these embodiments do not limit the scope of the present invention unless specifically stated otherwise. Meanwhile, it should be understood that the sizes of the respective portions shown in the drawings are not drawn in an actual proportional relationship for the convenience of description. Techniques, methods, and apparatus known to those of ordinary skill in the relevant art may not be discussed in detail but are intended to be part of the specification where appropriate. In all examples shown and discussed herein, any particular value should be construed as merely illustrative, and not limiting. Thus, other examples of the exemplary embodiments may have different values. It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, further discussion thereof is not required in subsequent figures.
As shown in fig. 1, according to an embodiment of the present invention, a wafer-level atomic gas chamber processing method based on MEMS technology is provided, and the wafer-level atomic gas chamber processing method based on MEMS technology includes: depositing a first mask layer on a first surface of a monocrystalline silicon wafer, and depositing a second mask layer on a second surface of the monocrystalline silicon wafer; depositing a first adhesive layer on the first mask layer, depositing a second adhesive layer on the second mask layer, and respectively carrying out photoetching development on the first adhesive layer and the second adhesive layer to form an air chamber pattern; performing through-silicon-via etching on the single crystal silicon wafer after the photoetching development based on the air chamber pattern, and removing the remaining first mask layer, the second mask layer, the first adhesive layer and the second adhesive layer; carrying out silicon-glass anodic bonding on the second surface of the monocrystalline silicon wafer with the through silicon holes and the glass wafer to form a first silicon-glass assembly with a gas chamber cavity; filling an alkali metal compound in a cavity of a gas chamber of the first silicon-glass assembly, wherein the alkali metal compound comprises a set proportion of rubidium chromate and cesium chromate compounds and a reducing agent or a set proportion of rubidium and cesium nitride and a reducing agent; arranging a second glass wafer on the surface of the opening of the air chamber cavity of the first silicon-glass assembly filled with the alkali metal compound to form a second silicon-glass assembly, vacuumizing the air chamber cavity of the second silicon-glass assembly, filling buffer gas, and carrying out silicon-glass anodic bonding on the second silicon-glass assembly; and carrying out reduction reaction on alkali metal atoms in the air chamber cavity of the second silicon-glass assembly after the silicon-glass anode bonding to generate alkali metal atoms, and finishing the processing of the wafer-level atomic air chamber.
By applying the configuration mode, a wafer-level atomic gas chamber processing method based on an MEMS (Micro-Electro-Mechanical System) technology is provided, the method is based on the MEMS technology, patterning and through hole etching, glass-silicon wafer anode bonding and alkali metal compound filling are carried out on the surface of a monocrystalline silicon wafer, finally vacuum anode bonding and reduction reaction of the surface of the wafer are carried out to generate an alkali metal simple substance, the stability of the alkali metal compound at normal temperature is considered to be higher than that of the alkali metal atom, rubidium chromate and cesium chromate compounds and a reducing agent or rubidium and cesium nitrides and reducing agents in set proportion are filled in the filling process, after a second silicon-glass assembly is packaged, the alkali metal atom in the gas chamber cavity of the second silicon-glass assembly is subjected to reduction reaction to generate the alkali metal atom, the method can improve the yield of the atomic gas chamber and ensure the filling effect of the alkali metal atoms.
Specifically, in the present invention, in order to implement wafer-level atomic gas chamber processing, a first mask layer needs to be deposited on a first surface of a single crystal silicon wafer, and a second mask layer needs to be deposited on a second surface of the single crystal silicon wafer. As an embodiment of the present invention, a first mask layer is deposited on a first side of a single crystal silicon wafer by low pressure vapor deposition (LPCVD), and a second mask layer is deposited on a second side of the single crystal silicon wafer by low pressure vapor deposition (LPCVD), wherein the first mask layer and the second mask layer comprise a silicon oxide/silicon nitride mask layer.
After the deposition of the first mask layer and the second mask layer is completed, a first adhesive layer can be deposited on the first mask layer, a second adhesive layer is deposited on the second mask layer, and the first adhesive layer and the second adhesive layer are respectively subjected to photoetching development to form an air chamber pattern. Specifically, photoresist is spun on the two sides of the surface of the monocrystalline silicon wafer, photoetching, developing and patterning are carried out, and the first adhesive layer and the second adhesive layer are used for a mask for silicon nitride/silicon oxide dry etching.
Further, after the air chamber pattern is formed, through-silicon-via etching can be performed on the single crystal silicon wafer after the photolithography and development based on the air chamber pattern, and the remaining first mask layer, the second mask layer, the first adhesive layer and the second adhesive layer are removed. In the invention, the etching of the through-silicon via of the single crystal silicon wafer after the photolithography and development specifically comprises: carrying out deep silicon etching on the single crystal silicon wafer after the photoetching development by adopting a dry etching method, and completely etching through the silicon wafer; or carrying out through-silicon-via etching on the single crystal silicon wafer after the photoetching in a wet etching mode.
Under the configuration mode, the through silicon via etching is carried out on the single crystal silicon wafer after the photoetching development in a wet etching mode, and the mode has the advantages that the inner wall of the cavity has better flatness compared with dry etching, the inner wall is smooth and flat, the adhesion of alkali metal atoms on the inner wall can be effectively reduced, and the saturated absorption of the alkali metal atoms is improved. As a specific embodiment of the present invention, when the thickness of the monocrystalline silicon wafer is 0.5mm, 1mm, the monocrystalline silicon wafer after the photolithography and development is usually subjected to deep silicon etching by a dry etching method; when the thickness of the single crystal silicon wafer is 1.5mm, 2mm, 2.5mm or even more, the single crystal silicon wafer after the photolithography development is usually subjected to deep silicon etching by a wet etching method.
Further, after the through silicon via etching of the monocrystalline silicon wafer is completed, the second surface of the monocrystalline silicon wafer with the through silicon via and the glass wafer can be subjected to silicon-glass anodic bonding to form the first silicon-glass assembly with the gas chamber cavity. As an embodiment of the invention, the second side of the monocrystalline silicon wafer with through silicon vias is silicon-glass anodically bonded to a 0.5mm thick glass wafer to form a first silicon-glass assembly with a gas chamber cavity.
After the first silicon-glass assembly is formed, the chamber of the first silicon-glass assembly may be filled with an alkali metal compound comprising a predetermined ratio of rubidium chromate and cesium chromate compounds to a reducing agent or a predetermined ratio of rubidium and cesium nitride to a reducing agent.
After the alkali metal compound is filled, arranging a second glass wafer on the surface of the opening of the gas chamber cavity of the first silicon-glass assembly filled with the alkali metal compound to form a second silicon-glass assembly, vacuumizing the gas chamber cavity of the second silicon-glass assembly, filling buffer gas, and carrying out silicon-glass anodic bonding on the second silicon-glass assembly. As a specific embodiment of the invention, a second glass wafer is arranged on the surface of the opening of the gas chamber cavity of the first silicon-glass assembly filled with the alkali metal compound, the gas chamber cavity is vacuumized before the bonding voltage is applied, and a certain proportion of nitrogen is filled in the gas chamber cavity to serve as buffer gas.
Further, after the silicon-glass anodic bonding is carried out on the second silicon-glass assembly, the alkali metal atoms in the air chamber cavity of the silicon-glass anodic bonded second silicon-glass assembly can be subjected to a reduction reaction to generate alkali metal atoms, and the wafer-level atomic air chamber processing is completed. Specifically, when the alkali metal compound is a rubidium chromate compound and a cesium carbonate compound in a set ratio, the step of performing a reduction reaction on the alkali metal atoms in the gas chamber cavity of the second silicon-glass assembly to generate the alkali metal atoms specifically includes: and transferring the second silicon-glass assembly to a high-temperature annealing furnace for high-temperature annealing so as to enable the alkali metal atoms in the chamber body to generate reduction reaction to generate the alkali metal atoms. As one embodiment of the present invention, the temperature range of the high temperature annealing is 500 ° to 650 °.
When the alkali metal compound is a nitride of rubidium and cesium and a reducing agent in a set proportion, the step of performing a reduction reaction on the alkali metal atoms in the gas chamber cavity of the second silicon-glass composite body to generate the alkali metal atoms specifically comprises: and irradiating the alkali metal atoms in the air chamber cavity of the second silicon-glass assembly by ultraviolet rays to decompose and generate the alkali metal atoms and nitrogen.
According to another aspect of the present invention, there is provided a wafer-level atomic gas chamber processing device based on MEMS technology, which performs atomic gas chamber processing using the wafer-level atomic gas chamber processing method based on MEMS technology as described above.
By applying the configuration mode, the wafer-level atomic gas chamber processing device based on the MEMS technology is provided, because the atomic gas chamber processing method provided by the invention is based on the MEMS (Micro-Electro-Mechanical System) technology, the patterning and through hole etching, the glass-silicon wafer anode bonding and the alkali metal compound filling are carried out on the surface of a monocrystalline silicon wafer, finally the vacuum anode bonding and the reduction reaction of the surface of the wafer are carried out to generate the alkali metal simple substance, the stability of the alkali metal compound at normal temperature is considered to be higher than that of the alkali metal atom, the rubidium chromate and cesium chromate compound and the reducing agent or the rubidium and cesium nitride and the reducing agent with the set proportion are filled in the filling process, after the second silicon-glass assembly is packaged, the alkali metal atom in the gas chamber cavity of the second silicon-glass assembly is subjected to the reduction reaction to generate the alkali metal atom, the method can improve the yield of the atomic gas chamber and ensure the filling effect of the alkali metal atoms. Therefore, when the processing device using the method is used for processing the atomic gas chamber, the processing efficiency and the processing quality of the atomic gas chamber can be greatly improved.
For further understanding of the present invention, the following describes the wafer-level atomic gas chamber processing method based on MEMS technology in detail with reference to fig. 1.
First embodiment
As shown in fig. 1, a wafer-level atomic gas chamber processing method based on MEMS technology is provided according to a first embodiment of the present invention, and specifically includes the following steps.
Step one, depositing a first mask layer on a first surface of a monocrystalline silicon wafer by adopting a low pressure vapor deposition (LPCVD) mode, and depositing a second mask layer on a second surface of the monocrystalline silicon wafer by adopting a low pressure vapor deposition (LPCVD) mode, wherein the first mask layer and the second mask layer comprise silicon oxide/silicon nitride mask layers.
And step two, depositing a first adhesive layer on the first mask layer, depositing a second adhesive layer on the second mask layer, and respectively carrying out photoetching development on the first adhesive layer and the second adhesive layer to form an air chamber pattern.
And thirdly, performing deep silicon etching on the single crystal silicon wafer after the photoetching development by adopting a dry etching method, completely etching through the silicon wafer, and removing the remaining first mask layer, the second mask layer, the first adhesive layer and the second adhesive layer.
And step four, carrying out silicon-glass anodic bonding on the second surface of the monocrystalline silicon wafer with the through silicon holes and the glass wafer with the thickness of 0.5mm to form a first silicon-glass assembly with the air chamber cavity.
And step five, mixing the rubidium chromate, the cesium chromate compound and the reducing agent according to a certain proportion, and filling the mixture into the air chamber cavity of the first silicon-glass assembly according to the calculated amount.
And sixthly, arranging a second glass wafer on the surface of the opening of the air chamber cavity of the first silicon-glass assembly filled with the alkali metal compound, vacuumizing the air chamber cavity before applying the bonding voltage, and filling a certain proportion of nitrogen in the air chamber cavity to serve as buffer gas.
And step seven, transferring the second silicon-glass combination after the silicon-glass anode bonding to a high-temperature annealing furnace for high-temperature annealing so as to enable alkali metal atoms in the air chamber cavity to generate a reduction reaction to generate alkali metal atoms, thereby finishing the processing of the wafer-level atomic air chamber. In the present embodiment, the temperature range of the high temperature annealing is 500 ° to 650 °.
Example two
According to a second embodiment of the invention, a wafer-level atomic gas chamber processing method based on MEMS technology is provided, and the method specifically comprises the following steps.
Step one, depositing a first mask layer on a first surface of a monocrystalline silicon wafer by adopting a low pressure vapor deposition (LPCVD) mode, and depositing a second mask layer on a second surface of the monocrystalline silicon wafer by adopting a low pressure vapor deposition (LPCVD) mode, wherein the first mask layer and the second mask layer comprise silicon oxide/silicon nitride mask layers.
And step two, depositing a first adhesive layer on the first mask layer, depositing a second adhesive layer on the second mask layer, and respectively carrying out photoetching development on the first adhesive layer and the second adhesive layer to form an air chamber pattern.
And thirdly, performing through silicon via etching on the single crystal silicon wafer after the photoetching and development by adopting a wet etching method, and removing the remaining first mask layer, the second mask layer, the first adhesive layer and the second adhesive layer. The method adopting wet etching has the advantages that the inner wall of the chamber has better flatness compared with dry etching, and the smooth and flat inner wall can effectively reduce the adhesion of alkali metal atoms on the inner wall and improve the saturation absorption of the alkali metal atoms.
And step four, carrying out silicon-glass anodic bonding on the second surface of the monocrystalline silicon wafer with the through silicon holes and the glass wafer with the thickness of 0.5mm to form a first silicon-glass assembly with the air chamber cavity.
And step five, mixing the rubidium chromate, the cesium chromate compound and the reducing agent according to a certain proportion, and filling the mixture into the air chamber cavity of the first silicon-glass assembly according to the calculated amount.
And sixthly, arranging a second glass wafer on the surface of the opening of the air chamber cavity of the first silicon-glass assembly filled with the alkali metal compound, vacuumizing the air chamber cavity before applying the bonding voltage, and filling a certain proportion of nitrogen in the air chamber cavity to serve as buffer gas.
And step seven, transferring the second silicon-glass combination after the silicon-glass anode bonding to a high-temperature annealing furnace for high-temperature annealing so as to enable alkali metal atoms in the air chamber cavity to generate a reduction reaction to generate alkali metal atoms, thereby finishing the processing of the wafer-level atomic air chamber. In the present embodiment, the temperature range of the high temperature annealing is 500 ° to 650 °.
Third embodiment
As shown in fig. 1, a wafer-level atomic gas chamber processing method based on MEMS technology is provided according to a first embodiment of the present invention, and specifically includes the following steps.
Step one, depositing a first mask layer on a first surface of a monocrystalline silicon wafer by adopting a low pressure vapor deposition (LPCVD) mode, and depositing a second mask layer on a second surface of the monocrystalline silicon wafer by adopting a low pressure vapor deposition (LPCVD) mode, wherein the first mask layer and the second mask layer comprise silicon oxide/silicon nitride mask layers.
And step two, depositing a first adhesive layer on the first mask layer, depositing a second adhesive layer on the second mask layer, and respectively carrying out photoetching development on the first adhesive layer and the second adhesive layer to form an air chamber pattern.
And thirdly, performing deep silicon etching on the single crystal silicon wafer after the photoetching development by adopting a dry etching method, completely etching through the silicon wafer, and removing the remaining first mask layer, the second mask layer, the first adhesive layer and the second adhesive layer.
And step four, carrying out silicon-glass anodic bonding on the second surface of the monocrystalline silicon wafer with the through silicon holes and the glass wafer with the thickness of 0.5mm to form a first silicon-glass assembly with the air chamber cavity.
And step five, mixing rubidium and cesium nitride and a reducing agent according to a certain proportion, and filling the mixture into the air chamber cavity of the first silicon-glass assembly according to the calculated amount.
And sixthly, arranging a second glass wafer on the surface of the opening of the air chamber cavity of the first silicon-glass assembly filled with the alkali metal compound, vacuumizing the air chamber cavity before applying the bonding voltage, and filling a certain proportion of nitrogen in the air chamber cavity to serve as buffer gas.
And seventhly, performing ultraviolet irradiation on the alkali metal atoms in the air chamber cavity of the second silicon-glass assembly to decompose and generate rubidium simple substance, cesium simple substance and nitrogen, wherein the generated nitrogen can be just used as buffer gas in the air chamber, and finally forming the alkali metal simple substance and nitrogen atmosphere in the air chamber.
In summary, the present invention provides a wafer-level atomic gas chamber processing method based on MEMS technology, which is based on MEMS (Micro-Electro-Mechanical systems) technology, and comprises performing patterning and via etching, glass-silicon wafer anodic bonding and alkali metal compound filling on a single crystal silicon wafer surface, and finally performing vacuum anodic bonding and reduction reaction on the wafer surface to generate an alkali metal simple substance, in this way, considering that the stability of the alkali metal compound at normal temperature is higher than that of the alkali metal atom, filling a predetermined proportion of rubidium chromate and cesium chromate compound and a reducing agent or a predetermined proportion of rubidium and cesium nitride and reducing agent during the filling process, and after the second silicon-glass assembly is packaged, performing reduction reaction on the alkali metal atom in the gas chamber cavity of the second silicon-glass assembly to generate the alkali metal atom, the method can improve the yield of the atomic gas chamber and ensure the filling effect of the alkali metal atoms.
Spatially relative terms, such as "above … …," "above … …," "above … … surface," "above," and the like, may be used herein for ease of description to describe one device or feature's spatial relationship to another device or feature as illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if a device in the figures is turned over, devices described as "above" or "on" other devices or configurations would then be oriented "below" or "under" the other devices or configurations. Thus, the exemplary term "above … …" can include both an orientation of "above … …" and "below … …". The device may be otherwise variously oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly.
It should be noted that the terms "first", "second", and the like are used to define the components, and are only used for convenience of distinguishing the corresponding components, and the terms have no special meanings unless otherwise stated, and therefore, the scope of the present invention should not be construed as being limited.
The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (7)
1. A wafer-level atomic gas chamber processing method based on an MEMS technology is characterized by comprising the following steps:
depositing a first mask layer on a first surface of a monocrystalline silicon wafer, and depositing a second mask layer on a second surface of the monocrystalline silicon wafer;
depositing a first adhesive layer on the first mask layer, depositing a second adhesive layer on the second mask layer, and respectively carrying out photoetching development on the first adhesive layer and the second adhesive layer to form an air chamber pattern;
performing through-silicon-via etching on the single crystal silicon wafer after the photoetching development based on the air chamber pattern, and removing the remaining first mask layer, the second mask layer, the first adhesive layer and the second adhesive layer;
carrying out silicon-glass anodic bonding on the second surface of the monocrystalline silicon wafer with the through silicon holes and the glass wafer to form a first silicon-glass assembly with a gas chamber cavity;
filling an alkali metal compound in a gas chamber cavity of the first silicon-glass assembly, wherein the alkali metal compound comprises a set proportion of rubidium chromate and cesium chromate compounds and a reducing agent or a set proportion of rubidium chromate and cesium nitride and a reducing agent;
arranging a second glass wafer on the surface of the opening of the gas chamber cavity of the first silicon-glass assembly filled with the alkali metal compound to form a second silicon-glass assembly, vacuumizing the gas chamber cavity of the second silicon-glass assembly, filling buffer gas, and carrying out silicon-glass anodic bonding on the second silicon-glass assembly;
and carrying out reduction reaction on alkali metal atoms in the air chamber cavity of the second silicon-glass assembly after the silicon-glass anode bonding to generate alkali metal atoms, and finishing the processing of the wafer-level atomic air chamber.
2. The wafer-level atomic gas cell processing method based on the MEMS technology as recited in claim 1, wherein, when the alkali metal compound is a rubidium chromate and a cesium chromate compound in a set ratio, the reduction reaction of the alkali metal atoms in the gas cell cavity of the second silicon-glass assembly to generate the alkali metal atoms specifically includes: and transferring the second silicon-glass assembly to a high-temperature annealing furnace for high-temperature annealing so as to enable alkali metal atoms in the air chamber cavity to generate a reduction reaction and generate alkali metal atoms.
3. The wafer-level atomic gas cell processing method based on the MEMS technology as claimed in claim 1, wherein, when the alkali metal compound is a set ratio of nitride of rubidium and cesium and a reducing agent, the reduction reaction of the alkali metal atoms in the gas cell cavity of the second silicon-glass assembly to generate the alkali metal atoms specifically comprises: and irradiating alkali metal atoms in the air chamber cavity of the second silicon-glass assembly with ultraviolet rays to decompose and generate alkali metal atoms and nitrogen.
4. The wafer-level atomic gas chamber processing method based on the MEMS technology as claimed in any one of claims 1 to 3, wherein the through-silicon-via etching of the single crystal silicon wafer after the photolithography specifically comprises: and performing through-silicon-via etching on the single crystal silicon wafer after the photoetching development in a manner of performing deep silicon etching or wet etching on the single crystal silicon wafer after the photoetching development by adopting a dry etching method.
5. The wafer-level atomic gas chamber processing method based on the MEMS technology as claimed in claim 4, wherein a first mask layer is deposited on a first surface of a monocrystalline silicon wafer by a low pressure vapor deposition method, and a second mask layer is deposited on a second surface of the monocrystalline silicon wafer by the low pressure vapor deposition method.
6. The method of claim 2, wherein the high temperature anneal is in a range of 500 ° to 650 °.
7. A wafer-level atomic gas chamber processing device based on MEMS technology, which is characterized in that the wafer-level atomic gas chamber processing device based on MEMS technology is used for atomic gas chamber processing according to the wafer-level atomic gas chamber processing method based on MEMS technology of any one of claims 1 to 6.
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