CN1827522A - Process for preparing low-temperature wafer-level mini-sized gas container - Google Patents
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Abstract
The invention relates to a method for producing low-temperature circle sheet micro gas box, which is characterized in that: the benzocyclobutene is used to process material linkage with humid etching or dry etching technique of semi-conductor in 250Deg. C, to realize the circle sheet air-tightness sealing linkage of chip-level gas box. The invention comprises a atom gas box containing a chip-level atom clock gas box, a high-precision magnetic field sensor gas box, a atom feedback glimmer frequency stabilizer; a atom gas box containing a atom light filter, with glimmer Fabry-Perot chamber. The linked BCB glue is in 0.2 mum thickness, the air-tightness of sealed He gas can reach 2.1-5.9X10-4Pa cm3/s, and the linkage strength is higher than 4.65MPa, while the thermal cycle reliability can fully reach the packing standard of micro electric device.
Description
Technical field
The present invention relates to a kind of preparation method of low-temperature wafer-level mini-sized gas container, specifically, be a kind of benzocyclobutene (BCB) material that utilizes at through wet etching or the semi-conducting material of dry etching or the air-tightness bonding that glass carries out low-temperature wafer-level, thereby realize the making of chip-scale gas box.Belong to low-light electrical part and Micrometer-Nanometer Processing Technology field.
Background technology
Part MEMS device for example the gas box, atom filter of chip-scale atomic clock, atomerg magnetic field sensor, laser frequency stabilization device because the requirement of its physics operation principle, stable operation and low drift, strict especially air-tight packaging.Along with semiconductor technology to systematization, integrated development, the temperature for bonding in device fabrication processes has also proposed lower requirement.The encapsulation of wafer level has higher manufacturing benefit, and the yield rate height can reduce production costs better.So it is one of important technology of MEMS area research exploration that the technical scheme of cavity is made in the encapsulation of wafer level low temperature airtightness always.
Benzocyclobutene (benzo-cyclo-butene, BCB) material is since the commercialization nineties, it is a kind of advanced person's electronic package material, be generally used for rerouting of integrated circuit, the technique for sticking of the MEMS device of now just open, non-tight cavity (compatible mutually) with IC technology by being used for gradually, BCB has low dielectric constant, excellent thermal, chemistry and mechanical stability, when being used for the wafer level bonding, advantage is as follows: the leveling ability of height; Solidification temperature is lower, does not need catalyst in the solidification process, does not have byproduct, and shrinkage factor can be ignored in the solidification process; Good adhesive property; BCB can also carry out photoetching or etching, can carry out PASTE SPECIAL; The BCB that solidifies can be used for optics to visible transparent; The erosion that the BCB that solidifies can resist multiple acid, alkali and solvent is fit to the application of fluid aspect; Water absorption rate is very low, and is favourable to level Hermetic Package; Dielectric constant is lower, and is favourable to wafer level packaging such as RF-MEMS; Do not influence in the encapsulation process device and circuit lead-in wire [(1) Wang Jing, Zhang Fuxin, Shen Xuening, etc.Benzocyclobutene and material thereof (I) [J].Fiberglass/composite, 2002,3 (2): 50-53; (2) Wang Jing, Zhang Fuxin, Shen Xuening, etc.Benzocyclobutene and material thereof (II) [J].Fiberglass/composite, 2002,5 (3): 44-50.].BCB has two types: Photosensitive (negative glue behavior) and non-photosensitivity type (claiming the dry etching type again).The monomer of BCB is a liquid, and what be transformed into solid-state dependence by liquid state is the mechanism that heating produce to be solidified.The monomer of BCB and mechanism of polymerization are as shown in Figure 1.The BCB monomer is by a series of diene synthetic reaction, and final formation is polymerization and crosslinked BCB solid polymer highly.
Being made as example explanation with chip-scale atomic clock gas box---atomic clock is since occurring, always along the development of high accuracy and microminiaturized both direction high speed.The miniature atomic clock has a wide range of applications and application demand in the fields such as measurement of communication, traffic, electric power, finance, military and national defense, Aeronautics and Astronautics and benchmark physical quantity.Under the promotion of high speed informationization, chipization and high reliability tide, above-mentioned each field will be more and more urgent for the demand of chip-scale atomic clock.Wherein " gas box " as the Core Feature assembly in the chip-scale atomic clock device, the status in microminiature atomic clock research field seems important all the more.The structure of chip-scale atomic clock is (J.Kitching, S.Knappe, and L.Hollberg.Miniaturevapor-cell atomic-frequency references, Appl.Phys.Lett.2002,81 (3): 553.) as shown in Figure 2.
In addition, in sensor field, realize that high-precision detection of magnetic field has very important practicality and scientific value; In the laser physics field, people show keen interest for the research of high-precision laser atomic frequency-stabilized laser, atom filtering and the research in micro-optics F-P (Fabry-Perot) chamber.
The chip-scale atomic clock is in the current scientific technological advance forward position, has challenging research field, is a scientific research task system-level, complicated, that subject system is blended.Especially in recent years, urgent along with for the demand of chip-scale atomic clock makes relative research more and more be subject to people's attention.On the one hand, because its potential application prospect, such as: the specific demand in the accurate Synchronization Control of the reference clock of communication, traffic system, finance, power system and military and national defense, Aeronautics and Astronautics field; On the other hand, because accurate standard time clock frequency source can further improve the measurement precision of other physical quantitys, this makes this research more and more be subjected to the attention of scientific circles.
Therefore, make the miniature atomic clock of chip-scale, and have excellent short-term stability and long-time stability, and have longer life and high reliability, become the target that people lay siege to.The physical principle of chip-scale atomic clock work is optical coherence layout imprison (CPT) principle, so will in its gas box, pour a certain amount of alkali metal Cs or Rb element, but the end fusing point of element (Cs is that 28.44 ℃, Rb are 39.31 ℃) has proposed the low temperature requirement for the packaging technology of gas box, and the low more alkali metal Cs that volatilizees in this process of temperature or the Rb element of encapsulation bonding are just few more.Simultaneously, in order to reduce the collision in the gas box and the Doppler effect of atomic motion, charge into a certain amount of buffer gas to improve the job stability of device in gas box, this has just proposed the requirement of high-air-tightness for gas box.
The method of making at present the atomic clock gas box mainly contains two classes: the first kind is the glass envelope blowing method, mainly be adopt glass tube through correct grinding, Chemical cleaning, dry, fuse, bakeout degassing, bleed, blow contraction mouth, distillation metal; Zhang Chengxiu, Zheng Yaohua.The making of the bulb of optical pump system and absorption bubble, frequency marking and demonstration, 1997 (1): 16-26.)。The gas foam general diameter minimum of Zhi Zuoing is also in a centimetre magnitude, so be difficult to produce on this basis the integrated chip-scale atomic clock of system-level height by this method.Second class is low temperature silicon-glass anode linkage method, by wet etching or be dry-etched in the silicon chip surface through hole produce atom vapor and the buffering body cavity, add alkali metal and buffer gas behind the normal temperature anode linkage for the first time, make with the low temperature airtightness of realizing the chip-scale atomic clock through secondary 300 ℃ of low temperature anodic bonding technique, technological process is [(1) Li-Anne Liew as shown in Figure 3, Svenja Knappe, John Morel, et al.Micromachined alkali atom vapor cells for chip-scale atomic clocks.MicroElectro Mechanical Systems.2004.17th IEEE International Conferenceon. (MEMS) 2004:113-116. (2) L.Liew, S.Knappe, J.Moreland, et al.Microfabricated alkali atom vapor cells, Appl.Phys.Lett.2004,84 (14): 2694. (3) Processing Procedures for Dry-Etch CYCLOTENE AdvancedElectronics Resins[M], The Dow Chemical Company, Published Nov.1997.]
The present invention attempts special physics and the chemical property in conjunction with benzocyclobutene (BCB) material, under 250 ℃ low-temperature bonding situation, realizes that the wafer level low-temperature bonding of little gas box of chip-scale atomic clock gas box and other purposes is made.
Summary of the invention
The object of the present invention is to provide a kind of preparation method of low-temperature wafer-level mini-sized gas container.It mainly utilizes the specific physical of benzocyclobutene (BCB) material, wet etching or the dry etching technology that chemical property is carried out material bonding and semi-conducting material, bonding under 250 ℃ cryogenic conditions, the wafer level air-tight packaging bonding of realization chip-scale gas box.
The objective of the invention is to implement by the following method:
(1) selects semi-conducting material, get final product so long as can graphically produce the material of cavity, as silicon, GaAs, indium phosphide, gallium nitride, indium nitride, diamond, aluminium nitride, aluminium oxide etc.;
(2) be that example is at first carried out graphical cavity making with the silicon chip, silicon chip carries out oxidation, obtains top layer mask silica and bottom layer silicon dioxide;
(3) spin coating photoresist (can be various photoresists, comprise positive glue, negative glue), through protection top layer mask silica after preceding baking, development, the curing, (a kind of silicon dioxide etching liquid of normal businessization, composition are NH at the BOE corrosive liquid
4The mixed liquor of F and HF) removes bottom layer silicon dioxide in;
(4) remove solidify the back photoresist after, spin coating photoresist again is through the mask of formation after graphically exposure, preceding baking, development, the curing to top layer silicon dioxide;
(5) corrosion top layer mask silica in the BOE corrosive liquid is its windowing, removes photoresist subsequently;
(6) carrying out silicon chip under the arm's length standard technological temperature and send the anode linkage of lux (Pyrex) 7740 glass, why select to send lux (Pyrex) 7740 glass, is because its thermal property and silicon is the most approaching, bonding is heated back residual thermal stress minimum; Described arm's length standard technology is that temperature is 380 ℃, voltage ± 800v;
(7) in KOH or other anisotropic silicons or isotropic etch liquid,, obtain cavity body structure by the window corrosion of silicon;
(8) in the BOE corrosive liquid, remove top layer mask silica fully, finish the making of cavity part;
(9) at bonding face surface spin coating of sending lux (Pyrex) 7740 glass or silicon structure or spraying BCB glue (available from DOW chemical company), concrete coating technique parameter is as follows: 1. at bonding face spin coating tackifier AP3000 (available from DOW chemical company), tackifier can make the disk adhesion strength improve one times nearly.Select the 800 rev/mins of spin coatings 20 seconds of uncapping for use, close and cover 2500 rev/mins of spin coatings 20 seconds.2. spin coating BCB glue on tackifier.Parameter is: 1000-5000 rev/min of spin coating 20-30 second, bondline thickness 5.5 μ m ~ 2.5 μ m.3. remove the BCB glue of silicon chip edge, avoid polluting the bonding machine, can by before the gluing at the edge of glass or structure pasted with high temperature-resistant adhesive tape, take off adhesive tape behind the gluing, thereby overflow when preventing BCB glue bonding and pollute the bonding machine.4. heat dish oven dry: purpose is that organic solvent is vapored away, to obtain not have the BCB glue bond layer of hole.Select for use concrete coating technique parameter as follows during element manufacturing: 1., to select the 800 rev/mins of spin coatings 20 seconds of uncapping for use, close and cover 2500 rev/mins of spin coatings 20 seconds at bonding face spin coating tackifier AP3000.2. spin coating BCB glue on tackifier selects to uncap 800 rev/mins of spin coatings 20 seconds in the experiment, closes and covers 1500 rev/mins of spin coatings 20 seconds, and bondline thickness is approximately 4～5 μ m;
(10) in step (8), add solid-state or liquid alkali metal element in the obtained cavity body structure;
(11) carry out the wafer level low-temperature bonding in the bonding machine, the major parameter in the bonding process has: bonding temperature and heating curve; The bonding on-load pressure; Vacuum.The solidification temperature of BCB is between 200-300 ℃, and standard technology is 250 ℃ of insulation 1h; When temperature is lower than 250 ℃, need the insulation several hrs; And temperature is then solidified rapidly when being higher than 250 ℃.Keep certain vacuum or needed gaseous environment simultaneously, and load certain bonding pressure (1～3 * 10
5Pa), thus the wafer level of finishing gas box make.Select for use concrete technological parameter as follows during element manufacturing, 1. temperature: 100 ℃ of insulation 10min, 150 ℃ of insulation 10min, 200 ℃ of insulation 10min, 250 ℃ of insulation 1h, coolings naturally; 2. silicon chip is applied 3 * 10
5The bonding on-load pressure of Pa; 3. vacuum condition (10
-1Pa);
(12) the wafer level device is carried out scribing, obtain single gas box device, combination is installed, finish the making of integral device with other devices.
The gas box that uses method provided by the invention to make, except being applied to the core component of chip-scale atomic clock---gas box, can also be used for atomic gas box, micro-optics F-P (Fabry-Perot) chamber and other opto-electronic devices, luminescent device of atomic gas box, the atomic light filter of high accuracy magnetic field sensor gas box, atom reaction type laser frequency stabilization device etc., and can produce in batches, have a wide range of applications.By BCB bonding package experiment, verified that using the BCB material carries out the encapsulation requirement that air-tightness, shear strength, thermal cycle reliability that gas box makes satisfy practical product fully.Air tightness test is finished by Varian 947 Helium leak detectors, and test result shows that BCB glue seal chamber air-tightness reaches 2.1～5.9 * 10
-4Pa cm
3/ s He is better than one of military standard more than the order of magnitude.Shear strength is finished by Dage Series 4000 bond strength test machines, and test result all more than 4.65MPa, has reached the encapsulation standard of microelectronic component fully.(numbering: 03-523) finish, test result has also reached the thermal shock experimental machine of thermal cycle reliability testing by KSON Instrument Technology company fully, the practical standard of electronic device.
Compare with existing method, the method has following characteristics:
(1) lower bonding temperature helps preventing the volatilization of vapour of an alkali metal in the bonding process and the element loss brought and for the pollution of bonding apparatus, more helps reducing the residual thermal stress of device.
(2) as Fig. 8 be the sample in cross section electromicroscopic photograph of Fig. 5 (f) structure devices, only 0.2 micron of BCB glue thickness behind the bonding wherein, and phenomenons such as bubble, disconnected glue do not appear.
(3) testing the air-tightness of making sample and 300 ℃ of direct low temperature anodic bonding technique by experiment contrasts as shown in Figure 9, shear strength is to such as Figure 10, the air-tightness of sample as shown in figure 11 after the thermal cycling temperature impact cycle, as can be seen, the device air tightness that obtains of this method is higher than one of other devices and standard more than the order of magnitude.Shear strength also satisfies the device application requirement fully.
(4) this method is with respect to the existing second class preparation method noted earlier, require for silicon chip and glass sheet surface flatness and roughness lower, so easier realization.
(5) technology is simple, and processing cost is low, can produce in batches, has better job stability and reliability, contrast shown in Fig. 8-11.
Description of drawings:
Fig. 1: BCB material monomer structure and Principles of Polymerization
Fig. 2: the physical arrangement of chip-scale atomic clock
Fig. 3: 300 ℃ of low temperature anodic bonding technique methods of bibliographical information are made the technological process of chip-scale atomic clock
(a) silicon chip
(b) silicon chip after the perforate
(c) silex glass anode linkage for the first time
(d) sample behind the bonding first time
(e) silex glass anode linkage for the second time
(f) the cavity sample of producing behind the bonding second time
Fig. 4: gas box cavity manufacture craft flow process provided by the invention
(a) silicon chip
(b) silicon chip after the two-sided thermal oxide
(c) silicon chip after the protection of top layer gluing
(d) silicon chip of bottom layer silicon dioxide is removed in the BOE corrosion
(e) top layer gluing, photoetching form the silicon chip of corrosion top layer silicon dioxide mask
(f) top layer silicon dioxide goes out the silicon chip of window by the BOE solution corrosion
(g) remove the silicon chip with earth silicon mask of top layer photoresist mask
(h) silicon chip behind the anode linkage and sheet glass integral body
(i) erode away the bonding integral body of cavity
(j) remove the cavity integral body that the wet etching silicon of top layer silicon dioxide mask makes
(k) gluing, photoetching form the silicon chip of dry etching mask
(l) dry etching and remove the silicon chip of top layer photoresist mask
(m) dry etching silicon chip behind the anode linkage and the formed cavity body structure of sheet glass
Fig. 5: use the technological process that the BCB material carries out the encapsulation of gas box low temperature airtightness
(a) sheet glass behind the spin coating BCB glue
(b) removed the sheet glass of nonbonding surface BCB glue behind the photoetching development
(c) the silex glass integral body of the wet etching behind the spin coating BCB glue
(d) cavity body structure of the wet etching behind interpolation solid or the liquid element
(e) gas box behind sheet glass and the wet etching cavity bonding
(f) gas box behind silex glass integral body and the wet etching cavity bonding
(g) the silex glass integral body of the dry etching behind the spin coating BCB glue
(h) cavity body structure of the dry etching behind interpolation solid or the liquid element
(i) gas box behind sheet glass and the dry etching cavity bonding
(j) gas box behind silex glass integral body and the dry etching cavity bonding
Fig. 6: BCB material whirl coating thickness technological parameter curve
Ordinate: bondline thickness
Abscissa: gluing rotating speed
Fig. 7: the BCB material standard is solidified heating curve
Ordinate: temperature
Abscissa: time
Fig. 8: the cross section stereoscan photograph that adopts BCB material package bonding sample
Fig. 9: 250 ℃ of air-tightness contrasts (each two groups of data) of adopting BCB material bonding and 300 ℃ of anode linkage samples
Ordinate: the logarithm value of leak detection test data
Abscissa: the seal chamber perforate length of side
Figure 10: 250 ℃ of shear strength contrasts of adopting BCB material bonding and 300 ℃ of anode linkage samples
Ordinate: shear strength test data
Abscissa: the seal chamber perforate length of side
Figure 11: the air-tightness of BCB material bonding sample is adopted in temperature shock circulation back
Ordinate: the logarithm value of leak detection test data
Abscissa: the seal chamber perforate length of side
Figure 12: based on the structure chart of the high accuracy magnetic field sensor of atomic energy level transition
Figure 13: based on the high-precision laser frequency regulator physical arrangement block diagram of atomic energy level comparison reaction type
Among the figure: 1: semi-conductor silicon chip
2: top layer mask silica
3: bottom layer silicon dioxide
4: photoresist
The 5:Pyrex7740 sheet glass
6: benzocyclobutene BCB (material)
7: solid base metal Cs/Rb element
8: alkali metal Cs/Rb element steam
9: vertical cavity emitting laser (VCSEL)
10: optics is regulated and colimated light system
11:Rb element vapor chamber
12: photodetector
The specific embodiment:
Illustrate that below by embodiment part of the present invention specifically uses, semiconductor medium material selection silicon chip, but application of the present invention is not limited only to silicon materials, also is not limited only to embodiment.
Embodiment 1
Adopt the wet etching silicon materials to make chip-scale atomic clock gas box, concrete technological process such as Fig. 4 are shown in 5.Processing step is as follows:
(1) selects semi-conducting material such as silicon chip 1 (the two throwing silicon chips of common N type (100), thickness 420 ± 15 μ m, resistivity 3-8 (Ω cm)), carry out oxidation, obtain top layer mask silica 2 and bottom layer silicon dioxide 3, as Fig. 4 (b);
(2) resist coating 4 (adopting the trade mark 1912 type photoresists of Shipley company in this experiment) solidifies back protection top layer mask silica 2, removes bottom layer silicon dioxide 3 in the BOE corrosive liquid, as Fig. 4 (d);
(3) remove solidify the back photoresist after, resist coating 4 and graphical exposure again, develop, obtain structure as Fig. 4 (e);
(4) corrosion top layer mask silica 2 in the BOE corrosive liquid for it opens corrosion window, removes photoresist 4, subsequently as Fig. 4 (g);
(5) (380 ℃ of temperature, voltage ± 800V) are carried out the anode linkage of silicon chip 1 and Pyrex7740 glass 5, as Fig. 4 (h) under arm's length standard technology;
(6) in KOH or other corrosive liquids,, obtain structure as Fig. 4 (i) by window corrosion of silicon 1;
(7) in the BOE corrosive liquid, remove top layer mask silica 2 fully, obtain cavity body structure as Fig. 4 (j);
(8) sending lux (Pyrex) 7740 glass 5 or as top layer face spin coating of Fig. 4 (j) cavity body structure or spraying BCB glue 6, concrete coating technique parameter is as follows: 1. at bonding face spin coating tackifier AP3000, select the 800 rev/mins of spin coatings 20 seconds of uncapping in the experiment for use, close and cover 2500 rev/mins of spin coatings 20 seconds.2. spin coating BCB glue on tackifier selects to uncap 800 rev/mins of spin coatings 20 seconds in the experiment, closes and covers 1500 rev/mins of spin coatings 20 seconds, and bondline thickness is approximately 4-5 μ m.3. remove the BCB glue of silicon chip edge, avoid polluting the bonding machine.4. heat dish oven dry.Obtain as Fig. 5 (b) or Fig. 5 (c) structure;
(9) in Fig. 4 (j) structure, add solid-state or liquid alkali metal element, as Fig. 5 (d);
(10) at last by the bonding machine, by setting the required pressure that pours buffer gas of control, carry out the low-temperature wafer-level air-tight packaging bonding of Fig. 5 (d) structure and Fig. 5 (b) or Fig. 5 (c) structure, the technological parameter of selecting in the experiment: 1. temperature: 100 ℃ of insulation 10min, 150 ℃ of insulation 10min, 200 ℃ of insulation 10min, 250 ℃ of insulation 1h, naturally cooling, as shown in Figure 7; 2. silicon chip is applied 3 * 10
5The bonding on-load pressure of Pa; 3. vacuum condition (10
-1Pa).Finally obtain gas box, finish the wafer level of gas box and make as Fig. 5 (e) or Fig. 5 (f);
(11) carry out scribing, thereby obtain single gas box device.
Embodiment 2
Adopt the dry etching silicon materials to make chip-scale atomic clock gas box, concrete technological process such as Fig. 4 are shown in 5.Processing step is as follows:
(1) select semi-conducting material such as silicon chip 1 (the two throwing silicon chips of common N type (100), thickness 420 ± 15 μ m, resistivity 3-8 (Ω cm)), also graphically exposing, develop in resist coating 4 backs, obtains the structure as Fig. 4 (k);
(2) under the pattern mask of photoresist, will obtain structure as Fig. 4 (k) structure by dry process reaction particle etching as Fig. 4 (1);
(3) (380 ℃ of temperature, voltage ± 800V) are carried out the anode linkage of silicon chip 1 and Pyrex7740 glass 5, as Fig. 4 (m) cavity body structure under arm's length standard technology;
(4) sending lux (Pyrex) 7740 glass 5 or as top layer face spin coating of Fig. 4 (m) cavity body structure or spraying BCB glue 6, concrete coating technique parameter obtains as Fig. 5 (b) or Fig. 5 (g) structure with reference to step (8) among the embodiment 1;
(5) in Fig. 4 (m) structure, add solid-state or liquid alkali metal element, as Fig. 5 (h);
(6) at last by the bonding machine, by setting the required pressure that pours buffer gas of control, carry out the low-temperature wafer-level air-tight packaging bonding of Fig. 5 (h) structure and Fig. 5 (b) or Fig. 5 (g) structure, the technological parameter of selecting in the experiment is with reference to step (10) among the embodiment 1, finally obtain gas box, finish the wafer level of gas box and make as Fig. 5 (i) or Fig. 5 (j);
(7) carry out scribing, thereby obtain single gas box device.
Embodiment 3
Adopt the wet etching silicon materials to make high accuracy magnetic field sensor gas box, based on the structure of the high accuracy magnetic field sensor of atomic energy level transition as shown in figure 12, comprise that semiconductor vertical cavity emitting laser 9, optics regulates and colimated light system 10, Rb element vapor chamber 11, photodetector 12.Its core component---the manufacturing process steps of Rb element vapor chamber 11 is as follows:
(1) selects semi-conducting material such as silicon chip 1 (the two throwing silicon chips of common N type (100), thickness 420 ± 15 μ m, resistivity 3-8 (Ω cm)), carry out oxidation, obtain top layer mask silica 2 and bottom layer silicon dioxide 3, as Fig. 4 (b);
(2) resist coating 4 (adopting the trade mark 1912 type photoresists of Shipley company in this experiment) solidifies back protection top layer mask silica 2, removes bottom layer silicon dioxide 3 in the BOE corrosive liquid, as Fig. 4 (d);
(3) remove solidify the back photoresist after, resist coating 4 and graphical exposure again, develop, obtain structure as Fig. 4 (e);
(4) corrosion top layer mask silica 2 in the BOE corrosive liquid for it opens corrosion window, removes photoresist 4, subsequently as Fig. 4 (g);
(5) (380 ℃ of temperature, voltage ± 800V) are carried out the anode linkage of silicon chip 1 and Pyrex7740 glass 5, as Fig. 4 (h) under arm's length standard technology;
(6) in KOH or other corrosive liquids,, obtain structure as Fig. 4 (i) by window corrosion of silicon 1;
(7) in the BOE corrosive liquid, remove top layer mask silica 2 fully, obtain cavity body structure as Fig. 4 (j);
(8) sending lux (Pyrex) 7740 glass 5 or as top layer face spin coating of Fig. 4 (j) cavity body structure or spraying BCB glue 6, concrete coating technique parameter is as follows: 1. at bonding face spin coating tackifier AP3000, select the 800 rev/mins of spin coatings 20 seconds of uncapping in the experiment for use, close and cover 2500 rev/mins of spin coatings 20 seconds.2. spin coating BCB glue on tackifier selects to uncap 800 rev/mins of spin coatings 20 seconds in the experiment, closes and covers 1500 rev/mins of spin coatings 20 seconds, and bondline thickness is approximately 4-5 μ m.3. remove the BCB glue of silicon chip edge, avoid polluting the bonding machine.4. heat dish oven dry.Obtain as Fig. 5 (b) or Fig. 5 (c) structure;
(9) in Fig. 4 (j) structure, add solid-state or liquid alkali metal element, as Fig. 5 (d);
(10) at last by the bonding machine, by setting the required pressure that pours buffer gas of control, carry out the low-temperature wafer-level air-tight packaging bonding of Fig. 5 (d) structure and Fig. 5 (b) or Fig. 5 (c) structure, the technological parameter of selecting in the experiment: 1. temperature: 100 ℃ of insulation 10min, 150 ℃ of insulation 10min, 200 ℃ of insulation 10min, 250 ℃ of insulation 1h, naturally cooling, as shown in Figure 7; 2. silicon chip is applied 3 * 10
5The bonding on-load pressure of Pa; 3. vacuum condition (10
-1Pa).Finally obtain gas box, finish the wafer level of gas box and make as Fig. 5 (e) or Fig. 5 (f);
(11) carry out scribing, thereby obtain single gas box device.
Adopt the dry etching silicon materials to make high accuracy magnetic field sensor gas box, based on the structure of the high accuracy magnetic field sensor of atomic energy level transition as shown in figure 12, comprise that semiconductor vertical cavity emitting laser 9, optics regulates and colimated light system 10, Rb element vapor chamber 11, photodetector 12.Its core component---the manufacturing process steps of Rb element vapor chamber 11 is as follows:
(1) select semi-conducting material such as silicon chip 1 (the two throwing silicon chips of common N type (100), thickness 420 ± 15 μ m, resistivity 3-8 (Ω cm)), resist coating 4 backs and graphical exposure, development obtain the structure as Fig. 4 (k);
(2) under the pattern mask of photoresist, will obtain structure as Fig. 4 (k) structure by dry process reaction particle etching as Fig. 4 (1);
(3) (380 ℃ of temperature, voltage ± 800V) are carried out the anode linkage of silicon chip 1 and Pyrex7740 glass 5, as Fig. 4 (m) cavity body structure under arm's length standard technology;
(4) sending lux (Pyrex) 7740 glass 5 or as top layer face spin coating of Fig. 4 (m) cavity body structure or spraying BCB glue 6, concrete coating technique parameter obtains as Fig. 5 (b) or Fig. 5 (g) structure with reference to step (8) among the embodiment 1;
(5) in Fig. 4 (m) structure, add solid-state or liquid alkali metal element, as Fig. 5 (h);
(6) at last by the bonding machine, by setting the required pressure that pours buffer gas of control, carry out the low-temperature wafer-level air-tight packaging bonding of Fig. 5 (h) structure and Fig. 5 (b) or Fig. 5 (g) structure, the technological parameter of selecting in the experiment is with reference to step (10) among the embodiment 1, finally obtain gas box, finish the wafer level of gas box and make as Fig. 5 (i) or Fig. 5 (j);
(7) carry out scribing, thereby obtain single gas box device.
Embodiment 5
Adopt the wet etching silicon materials to make the atomic gas box of atom reaction type laser frequency stabilization device, based on the physical arrangement of the high-precision laser frequency regulator of atomic energy level comparison reaction type as shown in figure 13, comprising: attemperating unit, semiconductor laser, atom vapor cavity, photodetector, wave filter, frequency mixer, phase regulator, oscillator and current-modulation.Its core component---the manufacturing process steps of Rb element vapor chamber is as follows:
(1) semi-conducting material such as silicon chip 1 (the two throwing silicon chips of common N type (100), thickness 420 ± 15 μ m, resistivity 3-8 (Ω cm)) carry out oxidation, obtain top layer mask silica 2 and bottom layer silicon dioxide 3, as Fig. 4 (b);
(2) resist coating 4 (adopting the trade mark 1912 type photoresists of Shipley company in this experiment) solidifies back protection top layer mask silica 2, removes bottom layer silicon dioxide 3 in the BOE corrosive liquid, as Fig. 4 (d);
(3) remove solidify the back photoresist after, resist coating 4 and graphical exposure again, develop, obtain structure as Fig. 4 (e);
(4) corrosion top layer mask silica 2 in the BOE corrosive liquid for it opens corrosion window, removes photoresist 4, subsequently as Fig. 4 (g);
(5) (380 ℃ of temperature, voltage ± 800V) are carried out the anode linkage of silicon chip 1 and Pyrex7740 glass 5, as Fig. 4 (h) under arm's length standard technology;
(6) in KOH or other corrosive liquids,, obtain structure as Fig. 4 (i) by window corrosion of silicon 1;
(7) in the BOE corrosive liquid, remove top layer mask silica 2 fully, obtain cavity body structure as Fig. 4 (j);
(8) sending lux (Pyrex) 7740 glass 5 or as top layer face spin coating of Fig. 4 (j) cavity body structure or spraying BCB glue 6, concrete coating technique parameter is as follows: 1. at bonding face spin coating tackifier AP3000, select the 800 rev/mins of spin coatings 20 seconds of uncapping in the experiment for use, close and cover 2500 rev/mins of spin coatings 20 seconds.2. spin coating BCB glue on tackifier selects to uncap 800 rev/mins of spin coatings 20 seconds in the experiment, closes and covers 1500 rev/mins of spin coatings 20 seconds, and bondline thickness is approximately 4-5 μ m.3. remove the BCB glue of silicon chip edge, avoid polluting the bonding machine.4. heat dish oven dry.Obtain as Fig. 5 (b) or Fig. 5 (c) structure;
(9) in Fig. 4 (j) structure, add solid-state or liquid alkali metal element, as Fig. 5 (d);
(10) at last by the bonding machine, by setting the required pressure that pours buffer gas of control, carry out the low-temperature wafer-level air-tight packaging bonding of Fig. 5 (d) structure and Fig. 5 (b) or Fig. 5 (c) structure, the technological parameter of selecting in the experiment: 1. temperature: 100 ℃ of insulation 10min, 150 ℃ of insulation 10min, 200 ℃ of insulation 10min, 250 ℃ of insulation 1h, naturally cooling, as shown in Figure 7; 2. silicon chip is applied 3 * 10
5The bonding on-load pressure of Pa; 3. vacuum condition (10
-1Pa).Finally obtain gas box, finish the wafer level of gas box and make as Fig. 5 (e) or Fig. 5 (f);
(11) carry out scribing, thereby obtain single gas box device.
Adopt the dry etching silicon materials to make the atomic gas box of atom reaction type laser frequency stabilization device, based on the physical arrangement of the high-precision laser frequency regulator of atomic energy level comparison reaction type as shown in figure 13, comprising: attemperating unit, semiconductor laser, atom vapor cavity, photodetector, wave filter, frequency mixer, phase regulator, oscillator and current-modulation.Its core component---the manufacturing process steps of Rb element vapor chamber is as follows:
(1) semi-conducting material such as silicon chip 1 (the two throwing silicon chips of common N type (100), thickness 420 ± 15 μ m, resistivity 3-8 (Ω cm)) carry out oxidation, obtain top layer mask silica 2 and bottom layer silicon dioxide 3, as Fig. 4 (b);
(2) resist coating 4 (adopting the trade mark 1912 type photoresists of Shipley company in this experiment) solidifies back protection top layer mask silica 2, removes bottom layer silicon dioxide 3 in the BOE corrosive liquid, as Fig. 4 (d);
(3) remove solidify the back photoresist after, resist coating 4 and graphical exposure again, develop, obtain structure as Fig. 4 (e);
(4) corrosion top layer mask silica 2 in the BOE corrosive liquid for it opens corrosion window, removes photoresist 4, subsequently as Fig. 4 (g);
(5) (380 ℃ of temperature, voltage ± 800V) are carried out the anode linkage of silicon chip 1 and Pyrex7740 glass 5, as Fig. 4 (h) under arm's length standard technology;
(6) in KOH or other corrosive liquids,, obtain structure as Fig. 4 (i) by window corrosion of silicon 1;
(7) in the BOE corrosive liquid, remove top layer mask silica 2 fully, obtain cavity body structure as Fig. 4 (j).
Embodiment 7
Adopt the wet etching silicon materials to make the atomic gas box of atomic light filter, processing step is as follows:
(1) selects semi-conducting material such as silicon chip 1 (the two throwing silicon chips of common N type (100), thickness 420 ± 15 μ m, resistivity 3-8 (Ω cm)), carry out oxidation, obtain top layer mask silica 2 and bottom layer silicon dioxide 3, as Fig. 4 (b);
(2) resist coating 4 (adopting the trade mark 1912 type photoresists of Shipley company in this experiment) solidifies back protection top layer mask silica 2, removes bottom layer silicon dioxide 3 in the BOE corrosive liquid, as Fig. 4 (d);
(3) remove solidify the back photoresist after, resist coating 4 and graphical exposure again, develop, obtain structure as Fig. 4 (e);
(4) corrosion top layer mask silica 2 in the BOE corrosive liquid for it opens corrosion window, removes photoresist 4, subsequently as Fig. 4 (g);
(5) (380 ℃ of temperature, voltage ± 800V) are carried out the anode linkage of silicon chip 1 and Pyrex7740 glass 5, as Fig. 4 (h) under arm's length standard technology;
(6) in KOH or other corrosive liquids,, obtain structure as Fig. 4 (i) by window corrosion of silicon 1;
(7) in the BOE corrosive liquid, remove top layer mask silica 2 fully, obtain cavity body structure as Fig. 4 (j);
(8) sending lux (Pyrex) 7740 glass 5 or as top layer face spin coating of Fig. 4 (j) cavity body structure or spraying BCB glue 6, concrete coating technique parameter is as follows: 1. at bonding face spin coating tackifier AP3000, select the 800 rev/mins of spin coatings 20 seconds of uncapping in the experiment for use, close and cover 2500 rev/mins of spin coatings 20 seconds.2. spin coating BCB glue on tackifier selects to uncap 800 rev/mins of spin coatings 20 seconds in the experiment, closes and covers 1500 rev/mins of spin coatings 20 seconds, and bondline thickness is approximately 4-5 μ m.3. remove the BCB glue of silicon chip edge, avoid polluting the bonding machine.4. heat dish oven dry.Obtain as Fig. 5 (b) or Fig. 5 (c) structure;
(9) in conjunction with characteristics such as required filter wavelengths, select suitable optical filtering element steam, by the bonding machine, by setting the required pressure that pours optical filtering gas of control, heat up again and carry out the low-temperature wafer-level air-tight packaging bonding of Fig. 5 (d) structure and Fig. 5 (b) or Fig. 5 (c) structure, obtain gas box, finish the wafer level of gas box and make as Fig. 5 (e) or Fig. 5 (f).
(10) carry out scribing, thereby obtain single gas box device.
Adopt the dry etching silicon materials to make the atomic gas box of atomic light filter, processing step is as follows:
(1) select semi-conducting material such as silicon chip 1 (the two throwing silicon chips of common N type (100), thickness 420 ± 15 μ m, resistivity 3-8 (Ω cm)), resist coating 4 backs and graphical exposure, development obtain the structure as Fig. 4 (k);
(2) under the pattern mask of photoresist, will obtain structure as Fig. 4 (k) structure by dry process reaction particle etching as Fig. 4 (1);
(3) (380 ℃ of temperature, voltage ± 800V) are carried out the anode linkage of silicon chip 1 and Pyrex7740 glass 5, as Fig. 4 (m) cavity body structure under arm's length standard technology;
(4) sending lux (Pyrex) 7740 glass 5 or as top layer face spin coating of Fig. 4 (m) cavity body structure or spraying BCB glue 6, concrete coating technique parameter obtains as Fig. 5 (b) or Fig. 5 (g) structure with reference to step (8) among the embodiment 1;
(5) in conjunction with characteristics such as required filter wavelengths, select suitable optical filtering element steam, by the bonding machine, by setting the required pressure that pours optical filtering gas of control, heat up again and carry out the low-temperature wafer-level air-tight packaging bonding of Fig. 5 (h) structure and Fig. 5 (b) or Fig. 5 (m) structure, obtain gas box, finish the wafer level of gas box and make as Fig. 5 (i) or Fig. 5 (j).
(6) carry out scribing, thereby obtain single gas box device.
Embodiment 9
Adopt the wet etching silicon materials to make micro-optics F-P (Fabry-Perot) chamber, concrete processing step is as follows:
(1) selects semi-conducting material such as silicon chip 1 (the two throwing silicon chips of common N type (100), thickness 420 ± 15 μ m, resistivity 3-8 (Ω cm)), carry out oxidation, obtain top layer mask silica 2 and bottom layer silicon dioxide 3, as Fig. 4 (b);
(2) resist coating 4 (adopting the trade mark 1912 type photoresists of Shipley company in this experiment) solidifies back protection top layer mask silica 2, removes bottom layer silicon dioxide 3 in the BOE corrosive liquid, as Fig. 4 (d);
(3) remove solidify the back photoresist after, resist coating 4 and graphical exposure again, develop, obtain structure as Fig. 4 (e);
(4) corrosion top layer mask silica 2 in the BOE corrosive liquid for it opens corrosion window, removes photoresist 4, subsequently as Fig. 4 (g);
(5) (380 ℃ of temperature, voltage ± 800V) are carried out the anode linkage of silicon chip 1 and Pyrex7740 glass 5, as Fig. 4 (h) under arm's length standard technology;
(6) in KOH or other corrosive liquids,, obtain structure as Fig. 4 (i) by window corrosion of silicon 1;
(7) in the BOE corrosive liquid, remove top layer mask silica 2 fully, obtain cavity body structure as Fig. 4 (j);
(8) sending lux (Pyrex) 7740 glass 5 or as top layer face spin coating of Fig. 4 (j) cavity body structure or spraying BCB glue 6, concrete coating technique parameter is as follows: 1. at bonding face spin coating tackifier AP3000, select the 800 rev/mins of spin coatings 20 seconds of uncapping in the experiment for use, close and cover 2500 rev/mins of spin coatings 20 seconds.2. spin coating BCB glue on tackifier selects to uncap 800 rev/mins of spin coatings 20 seconds in the experiment, closes and covers 1500 rev/mins of spin coatings 20 seconds, and bondline thickness is approximately 4-5 μ m.3. remove the BCB glue of silicon chip edge, avoid polluting the bonding machine.4. heat dish oven dry.Obtain as Fig. 5 (b) or Fig. 5 (c) structure;
(9) in Fig. 4 (j) structure, add solid-state or liquid alkali metal element, as Fig. 5 (d);
(10) at last by the bonding machine, by setting the required pressure that pours buffer gas of control, carry out the low-temperature wafer-level air-tight packaging bonding of Fig. 5 (d) structure and Fig. 5 (b) or Fig. 5 (c) structure, the technological parameter of selecting in the experiment: 1. temperature: 100 ℃ of insulation 10min, 150 ℃ of insulation 10min, 200 ℃ of insulation 10min, 250 ℃ of insulation 1h, naturally cooling, as shown in Figure 7; 2. silicon chip is applied 3 * 10
5The bonding on-load pressure of Pa; 3. vacuum condition (10
-1Pa).Finally obtain gas box, finish the wafer level of gas box and make as Fig. 5 (e) or Fig. 5 (f);
(11) carry out scribing, thereby obtain single gas box device.
Revising part mainly is the glass material of selecting to have made required high-reflecting film in optics F-P (Fabry-Perot) chamber and anti-reflection film when selecting glass 5 for use, and glass material can make by steps such as sputter/evaporation, photo etched mask, corrosion by Pyrex 7740 glass 5 in this.F-P (Fabry-Perot) structure as Fig. 5 (e) or Fig. 5 (f) also can all replace with movable membrane structure with top layer or bilevel Pyrex7740 glass 5 simultaneously, so just produces long variable micro-optics F-P (Fabry-Perot) chamber, chamber.
Embodiment 10
Adopt the dry etching silicon materials to make micro-optics F-P (Fabry-Perot) chamber, concrete processing step is as follows:
(1) select semi-conducting material such as silicon chip 1 (the two throwing silicon chips of common N type (100), thickness 420 ± 15 μ m, resistivity 3-8 (Ω cm)), resist coating 4 backs and graphical exposure, development obtain the structure as Fig. 4 (k);
(2) under the pattern mask of photoresist, will obtain structure as Fig. 4 (k) structure by dry process reaction particle etching as Fig. 4 (1);
(3) (380 ℃ of temperature, voltage ± 800V) are carried out the anode linkage of silicon chip 1 and Pyrex7740 glass 5, as Fig. 4 (m) cavity body structure under arm's length standard technology;
(4) sending lux (Pyrex) 7740 glass 5 or as top layer face spin coating of Fig. 4 (m) cavity body structure or spraying BCB glue 6, concrete coating technique parameter obtains as Fig. 5 (b) or Fig. 5 (g) structure with reference to step (8) among the embodiment 1;
(5) in Fig. 4 (m) structure, add solid-state or liquid alkali metal element, as Fig. 5 (h);
(6) at last by the bonding machine, by setting the required pressure that pours buffer gas of control, carry out the low-temperature wafer-level air-tight packaging bonding of Fig. 5 (h) structure and Fig. 5 (b) or Fig. 5 (g) structure, the technological parameter of selecting in the experiment is with reference to step (10) among the embodiment 1, finally obtain gas box, finish the wafer level of gas box and make as Fig. 5 (i) or Fig. 5 (j);
(7) carry out scribing, thereby obtain single gas box device.
Revising part mainly is the glass material of selecting to have made required high-reflecting film in optics F-P (Fabry-Perot) chamber and anti-reflection film when selecting glass 5 for use, and glass material can make by steps such as sputter/evaporation, photo etched mask, corrosion by Pyrex7740 glass 5 in this.F-P (Fabry-Perot) structure as Fig. 5 (i) or Fig. 5 (j) also can all replace with movable membrane structure with top layer or bilevel Pyrex7740 glass 5 simultaneously, so just produces long variable micro-optics F-P (Fabry-Perot) chamber, chamber.
Claims (7)
1. the preparation method of a low-temperature wafer-level mini-sized gas container, it is characterized in that utilizing the benzocyclobutene material to carry out the wet etching or the dry etching technology of material bonding and semi-conducting material, bonding under 250 ℃ cryogenic conditions, realize the wafer level air-tight packaging bonding of chip-scale gas box, comprise the atomic gas box of chip-scale atomic clock gas box, high accuracy magnetic field sensor gas box, atom reaction type low-light frequency regulator, the atomic gas box or the making of micro-optics Fabry-Perot-type cavity of atomic light filter, its processing step is:
(a) select the semi-conducting material silicon chip, at first carry out graphical cavity and make, silicon chip carries out oxidation, obtains top layer mask silica and bottom layer silicon dioxide;
(b) spin coating photoresist through protection top layer mask silica after preceding baking, development, the curing, removes bottom layer silicon dioxide in the BOE corrosive liquid;
(c) remove solidify the back photoresist after, spin coating photoresist again is through the mask of formation after graphically exposure, preceding baking, development, the curing to top layer silicon dioxide;
(d) corrosion top layer mask silica in the BOE corrosive liquid is its windowing, removes photoresist subsequently;
(e), carry out silicon chip and the anode linkage of sending lux 7740 glass under the technology of ± 800v at 380 ℃;
(f) in KOH or other anisotropic silicons or isotropic etch liquid,, obtain cavity body structure by the window corrosion of silicon;
(g) in the BOE corrosive liquid, remove top layer mask silica fully, finish the making of cavity part;
(h) at bonding face surface spin coating of sending lux 7740 glass or silicon structure or spraying BCB glue, the coating technique parameter is as follows: 1. at bonding face spin coating tackifier, the 800 rev/mins of spin coatings 20 seconds of uncapping are closed and are covered 2500 rev/mins of spin coatings 20 seconds; 2. spin coating BCB glue on tackifier, parameter is: 1000-5000 rev/min of spin coating 20-30 second, bondline thickness 5.5 μ m～2.5 μ m; 3. remove the BCB glue of silicon chip edge, method be by before the gluing at the edge of glass or structure pasted with high temperature-resistant adhesive tape, take off adhesive tape behind the gluing, overflow when preventing BCB glue bonding and pollute the bonding machine; 4. the oven dry of heat dish vapors away organic solvent, to obtain not have the BCB glue bond layer of hole;
(i) in step (g), add solid-state or liquid alkali metal element in the obtained cavity body structure;
(j) carry out the wafer level low-temperature bonding in the bonding machine, bonding temperature is 250 ℃ of insulation 1h; And load 1～3 * 10
5The bonding pressure of Pa and 10
-1Pa vacuum;
(k) the wafer level device is carried out scribing, obtain single gas box device, combination is installed, finish the making of integral device with other devices;
Described BOE corrosive liquid is NH
4The mixed liquor of F and HF;
Described BCB glue is the english abbreviation of benzocyclobutene material.
2. by the method for the described low-temperature wafer-level mini-sized gas container of claim 1, the material that it is characterized in that graphically making cavity is any one of GaAs, indium phosphide, gallium nitride, indium nitride, diamond, aluminium nitride and aluminium oxide.
3. by the method for the described low-temperature wafer-level mini-sized gas container of claim 1, it is characterized in that described coating technique is:
1. the AP3000 tackifier of selecting for use tackifier to provide for DOW chemical company;
2. spin coating benzocyclobutene technological parameter is 800 rev/mins on the tackifier, and spin coating 20 seconds is closed and covered 1500 rev/mins, spin coating 20 seconds, and glue thickness is 4～5 μ m.
4. by the method for the described low-temperature wafer-level mini-sized gas container of claim 1, it is characterized in that benzocyclobutene glue thickness is 0.2 μ m behind the bonding.
5. by the method for the described low-temperature wafer-level mini-sized gas container of claim 1, the air-tightness that it is characterized in that benzocyclobutene glue seal chamber is 2.1～5.9 * 10
-4Pa cm
3/ s He.
6. by the method for the described low-temperature wafer-level mini-sized gas container of claim 1, it is characterized in that described chip-scale atomic clock gas box adopts any one making in wet etching or the dry etching, wherein wet corrosion technique is:
(a) select semi-conducting material such as the two throwing silicon chips of common N type (100), thickness 420 ± 15 μ m, resistivity 3-8 Ω cm carries out oxidation, obtains top layer mask silica (2) and bottom layer silicon dioxide (3);
(b) resist coating 4, solidify back protection top layer mask silica (2), remove bottom layer silicon dioxide (3) in the BOE corrosive liquid;
(c) remove solidify the back photoresist after, resist coating (4) and graphical exposure again, develop;
(d) corrosion top layer mask silica (2) in the BOE corrosive liquid for it opens corrosion window, removes photoresist (4) subsequently;
(e) under 380 ℃ of temperature, voltage ± 800V technology, carry out silicon chip (1) and the anode linkage of sending lux 7740 glass (5);
(f) in KOH or other corrosive liquids, by window corrosion of silicon (1);
(g) in the BOE corrosive liquid, remove top layer mask silica (2) fully, obtain cavity body structure;
(h) at cavity body structure top layer face spin coating of sending lux 7740 glass (5) or step (g) gained or spraying BCB glue (6), the coating technique parameter is as follows: 1. at bonding face spin coating tackifier AP3000, select the 800 rev/mins of spin coatings 20 seconds of uncapping for use, close and cover 2500 rev/mins of spin coatings 20 seconds.2. spin coating BCB glue on tackifier selects to uncap 800 rev/mins of spin coatings 20 seconds in the experiment, closes and covers 1500 rev/mins of spin coatings 20 seconds, and bondline thickness is approximately 4-5 μ m.3. remove the BCB glue of silicon chip edge; 4. heat dish oven dry;
(i) in the cavity body structure of step (g) gained, add solid-state or liquid alkali metal element;
(j) at last by the bonding machine, by setting the required pressure that pours buffer gas of control, carry out low-temperature wafer-level air-tight packaging bonding, the technological parameter of selection: 1. bonding temperature is 250 ℃ of insulation 1h, coolings naturally; 2. silicon chip is applied 3 * 10
5The bonding on-load pressure of Pa; 3. vacuum condition is 10
-1Pa finishes the wafer level of gas box and makes;
(k) carry out scribing, thereby obtain single gas box device; Described dry corrosion process is:
(a) select the two throwing silicon chips of the common N type of semi-conducting material (100), thickness 420 ± 15 μ m, resistivity 3-8 Ω cm, resist coating (4) back and graphical exposure, development;
(b) under the pattern mask of photoresist, the resulting structure of step (a) is passed through dry process reaction particle etching;
(c) under 380 ℃ of temperature, voltage ± 800V technology, carry out silicon chip (1) and the anode linkage of sending lux 7740 glass (5), obtain cavity body structure;
(d) at cavity body structure top layer face spin coating of sending lux 7740 glass (5) and step (c) gained or spraying BCB glue (6), concrete coating technique parameter is: 1. at bonding face spin coating tackifier AP3000, select the 800 rev/mins of spin coatings 20 seconds of uncapping for use, close and cover 2500 rev/mins of spin coatings 20 seconds.2. spin coating BCB glue on tackifier selects to uncap 800 rev/mins of spin coatings 20 seconds in the experiment, closes and covers 1500 rev/mins of spin coatings 20 seconds, and bondline thickness is approximately 4-5 μ m.3. remove the BCB glue of silicon chip edge; 4. heat dish oven dry;
(e) in the structure of step (c) made, add solid-state or liquid alkali metal element;
(f) at last by the bonding machine, by setting the required pressure that pours buffer gas of control, carry out low-temperature wafer-level air-tight packaging bonding, technological parameter is: 1. bonding temperature is 250 ℃ of insulation 1h, coolings naturally; 2. silicon chip is applied 3 * 10
5The bonding on-load pressure of Pa; 3. vacuum condition is 10
-1Pa finishes the wafer level of gas box and makes;
(g) carry out scribing, thereby obtain single gas box device;
Described BOE corrosive liquid is NH
4The mixed liquor of F and HF;
Described BCB glue is the english abbreviation of benzocyclobutene material.
7. by the method for the described low-temperature wafer-level mini-sized gas container of claim 6, heating up when it is characterized in that bonding is 100 ℃, insulation 10min, 150 ℃ of insulation 10min, 200 ℃ of insulation 10min.
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Cited By (5)
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| CN101990742A (en) * | 2008-02-07 | 2011-03-23 | L·甘 | Device, system, and method of frequency generation using an atomic resonator |
| CN102323738A (en) * | 2011-07-20 | 2012-01-18 | 中国科学院上海微系统与信息技术研究所 | Groove type atomic gas cavity and atomic clock physical system formed by same |
| CN103342335A (en) * | 2013-06-21 | 2013-10-09 | 中国科学院上海微系统与信息技术研究所 | System and method for aerating and plugging alkali metal steam chamber of mini type CPT atomic clock |
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| US6432752B1 (en) * | 2000-08-17 | 2002-08-13 | Micron Technology, Inc. | Stereolithographic methods for fabricating hermetic semiconductor device packages and semiconductor devices including stereolithographically fabricated hermetic packages |
| CN1594067A (en) * | 2003-09-08 | 2005-03-16 | 华中科技大学机械科学与工程学院 | Low-temperature integrated wafer level airtight package process for MESM |
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| CN101990742A (en) * | 2008-02-07 | 2011-03-23 | L·甘 | Device, system, and method of frequency generation using an atomic resonator |
| US8299858B2 (en) | 2008-02-07 | 2012-10-30 | Dimension 4 Ltd. | Device, system, and method of frequency generation using an atomic resonator |
| US8587382B2 (en) | 2008-02-07 | 2013-11-19 | Dimension 4 Ltd. | Device, system, and method of frequency generation using an atomic resonator |
| US9201403B2 (en) | 2008-02-07 | 2015-12-01 | Dimension 4 Ltd. | Device, system, and method of frequency generation using an atomic resonator |
| US9360844B2 (en) | 2008-02-07 | 2016-06-07 | Dimension 4 Ltd. | Apparatus, system, and method of frequency generation using an atomic resonator |
| US9685909B2 (en) | 2008-02-07 | 2017-06-20 | Dimension 4 Ltd. | Device, system, and method of frequency generation using an atomic resonator |
| CN102323738A (en) * | 2011-07-20 | 2012-01-18 | 中国科学院上海微系统与信息技术研究所 | Groove type atomic gas cavity and atomic clock physical system formed by same |
| CN102323738B (en) * | 2011-07-20 | 2014-04-02 | 中国科学院上海微系统与信息技术研究所 | Groove type atomic gas cavity and atomic clock physical system formed by same |
| CN103342335A (en) * | 2013-06-21 | 2013-10-09 | 中国科学院上海微系统与信息技术研究所 | System and method for aerating and plugging alkali metal steam chamber of mini type CPT atomic clock |
| CN103342335B (en) * | 2013-06-21 | 2015-10-07 | 中国科学院上海微系统与信息技术研究所 | A kind of inflation of miniature CPT atomic clock vapour of an alkali metal chamber and plugging system and method |
| CN114477074A (en) * | 2021-12-22 | 2022-05-13 | 北京自动化控制设备研究所 | Wafer-level atomic gas chamber processing method and device based on MEMS technology |
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