WO2015103859A1 - 阵列基板、液晶显示面板及显示装置 - Google Patents

阵列基板、液晶显示面板及显示装置 Download PDF

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Publication number
WO2015103859A1
WO2015103859A1 PCT/CN2014/081985 CN2014081985W WO2015103859A1 WO 2015103859 A1 WO2015103859 A1 WO 2015103859A1 CN 2014081985 W CN2014081985 W CN 2014081985W WO 2015103859 A1 WO2015103859 A1 WO 2015103859A1
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Prior art keywords
array substrate
photovoltaic
pixel unit
photovoltaic cell
transparent electrode
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PCT/CN2014/081985
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English (en)
French (fr)
Inventor
沈奇雨
陈旭
郭建
Original Assignee
京东方科技集团股份有限公司
北京京东方光电科技有限公司
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Priority to US14/428,932 priority Critical patent/US9348161B2/en
Publication of WO2015103859A1 publication Critical patent/WO2015103859A1/zh

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/13306—Circuit arrangements or driving methods for the control of single liquid crystal cells
    • G02F1/13318—Circuits comprising a photodetector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/1313—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells specially adapted for a particular application
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133553—Reflecting elements
    • G02F1/133555—Transflectors
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/13306—Circuit arrangements or driving methods for the control of single liquid crystal cells
    • G02F1/13324—Circuits comprising solar cells
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133357—Planarisation layers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G02F1/134345—Subdivided pixels, e.g. for grey scale or redundancy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Definitions

  • Embodiments of the present invention relate to an array substrate, a liquid crystal display panel, and a display device. Background technique
  • the thin film transistor liquid crystal display panel is mainly composed of an array substrate, a counter substrate, liquid crystal molecules located between the two substrates, and a backlight.
  • a plurality of pixel cells arranged in a matrix are disposed in the array substrate, and a thin film transistor, a metal signal line, and a pixel electrode are disposed in each of the image cells.
  • each pixel unit a region through which light in the backlight is permeable is generally referred to as a light-transmitting region, and a region in which light in the backlight is not permeable is referred to as a light-shielding region.
  • the light shielding area of the pixel unit generally corresponds to the area where the thin film transistor and the metal signal line are located, and the light transmission area of the pixel unit generally corresponds to the area where the pixel electrode is located.
  • the conventional liquid crystal display panel utilizes only the light energy transmitted through the light-transmitting region, and the light energy blocked by the light-shielding region is in a waste state, so that the light utilization efficiency of the conventional liquid crystal display panel is low.
  • An array substrate provided by an embodiment of the present invention includes a substrate substrate, a plurality of pixel units arranged on the substrate and arranged in a matrix, and a driving module for providing display signals for each of the pixel units;
  • the pixel unit is divided into a light transmitting area and a light blocking area, and further includes:
  • a photovoltaic cell assembly electrically connected to the driving module, the photovoltaic cell assembly being disposed between the substrate substrate and the pixel unit, or disposed on a side of the substrate substrate facing away from the pixel unit;
  • the photovoltaic cell assembly includes a plurality of photovoltaic sub-cells, each of the photovoltaic sub-cells including a first transparent electrode, a photovoltaic film and a second transparent electrode;
  • An orthographic projection of the photovoltaic film on the substrate substrate is located within the light-shielding region.
  • the array substrate provided by the embodiment of the invention is provided with a photovoltaic cell assembly electrically connected to the driving module, and the array substrate can convert the light energy of the light-shielding region into electrical energy by using the photovoltaic cell assembly, and output the electrical energy to the driving module.
  • the light energy of the light-shielding region can be effectively utilized, and the utilization ratio of the light energy of the array substrate is improved.
  • the opaque photovoltaic film in the photovoltaic cell module is located in the light-shielding region in the orthographic projection of the substrate, and therefore does not affect the aperture ratio of each pixel unit in the array substrate.
  • the above array substrate provided by the embodiment of the present invention further includes:
  • An orthographic projection of the photovoltaic film on the substrate substrate in an orthographic projection of the metal reflective layer on the substrate substrate, and an orthographic projection of the metal reflective layer on the substrate substrate is located in the Shading area i or inside.
  • the pixel unit and the photovoltaic cell assembly are located on the same side of the substrate, the metal reflective layer is directly over the second transparent electrode, and the second transparent electrode is The pattern of the metal reflective layer is uniform.
  • the second transparent electrode and the metal reflective layer can be formed by one patterning process, thereby simplifying the fabrication process.
  • the pixel unit and the photovoltaic cell assembly are respectively located on two sides of the substrate, and the metal reflective layer is directly on the first transparent electrode, and the first transparent electrode and the The patterns of the metal reflective layers are identical.
  • the first transparent electrode and the metal reflective layer can be formed by one patterning process, thereby simplifying the fabrication process.
  • the pixel unit and the photovoltaic cell assembly are located on the same side of the substrate, and further includes :
  • the array substrate provided by the embodiment of the present invention further includes: a stabilized current stabilizing module, wherein the photovoltaic cell assembly passes through the solution, in order to enable the electrical energy converted by the photovoltaic cell module to be stably supplied to the driving module.
  • the voltage stabilizing current module is electrically connected to the driving module.
  • a plurality of the photovoltaic sub-cells are connected in series or in parallel with each other.
  • the photovoltaic film comprises a thin layer of amorphous silicon disposed in a stack Membrane and microcrystalline silicon film.
  • the light shielding region is a region where the thin film transistor and the metal signal line of the array substrate are located.
  • the pixels for display of the pixel unit include a transmissive sub-pixel and a reflective sub-pixel, and the light-shielding region further includes an area in which the reflective sub-pixel is located.
  • a liquid crystal display panel according to an embodiment of the present invention includes any of the above array substrates provided by the embodiments of the present invention.
  • a display device includes the above liquid crystal display panel provided by the embodiment of the present invention.
  • FIG. 1 and FIG. 1b are respectively schematic structural diagrams of an array substrate according to an embodiment of the present invention.
  • Figure 3 is a cross-sectional view of the photovoltaic cell assembly of Figure 2a taken along the line A-A';
  • FIG. 4 is a schematic structural diagram of a photovoltaic cell assembly according to an embodiment of the present invention.
  • 5a and 5b are schematic structural views of an array substrate provided with a metal reflective layer according to an embodiment of the present invention.
  • FIG. 6 is a schematic structural diagram of the method for fabricating an array substrate according to an embodiment of the present invention. detailed description
  • An array substrate includes a base substrate 100, a plurality of pixel units 200 arranged on the base substrate 100 and arranged in a matrix, and each pixel unit 200.
  • a driving module that provides a display signal (the structure of the driving module is not shown in FIGS. 1a and 1b); each of the pixel units 200 is divided into a light transmitting region a and a light shielding region b.
  • the array substrate also includes:
  • the photovoltaic cell assembly 300 is electrically connected to the driving module.
  • the photovoltaic cell assembly 300 is disposed between the substrate substrate 100 and the pixel unit 200 as shown in FIG. 1A or disposed on the substrate substrate 100 away from the pixel unit 200 as shown in FIG. side;
  • the photovoltaic cell assembly 300 includes a plurality of photovoltaic sub-cells 310, each of which includes a first transparent electrode 311, a photovoltaic film 312 and a second transparent electrode 313 which are sequentially stacked.
  • the orthographic projection of the photovoltaic film 312 on the substrate substrate 100 is located in the light-shielding region b.
  • the array substrate provided by the embodiment of the invention is provided with a photovoltaic cell assembly electrically connected to the driving module, and the array substrate can convert the light energy of the light-shielding region into electrical energy by using the photovoltaic cell assembly, and output the electrical energy to the driving module.
  • the light energy of the light-shielding region can be effectively utilized, and the utilization ratio of the light energy of the array substrate is improved.
  • the opaque photovoltaic film in the photovoltaic cell module is located in the light-shielding region in the orthographic projection of the substrate, and therefore does not affect the aperture ratio of each pixel unit in the array substrate.
  • a junction amorphous silicon film a double junction amorphous silicon film, a double junction microcrystalline silicon film or a multi-junction laminated film, or may be a single crystal silicon film or a polycrystalline silicon film, etc., of course, as long as the solution of the present invention can be realized Photovoltaic films are all within the scope of the present invention.
  • the photovoltaic film 312 may include a stacked amorphous silicon film 3121 and a microcrystalline silicon film 3122, which are not limited herein.
  • the thickness of the amorphous silicon film is controlled, for example, between 200 nm and 300 nm, and the thickness of the microcrystalline silicon film is controlled, for example, at 1 ⁇ ⁇ ! Between ⁇ 3 ⁇ m, there is no limit here.
  • the material of the first transparent electrode and the second transparent electrode may be a transparent conductive oxide (TCO) material, and of course, other materials capable of implementing the solution of the present invention may be used. There is no limit here.
  • the first transparent electrode 311 is adjacent to the substrate 100, and the second transparent electrode 313 is away from the substrate 100.
  • the thickness of the first transparent electrode 311 is controlled, for example, between 1500 nm and 1800, and the thickness of the second transparent electrode 313 is controlled, for example, at about 100 nm.
  • the photovoltaic cell assembly 300 may be in a series structure, that is, between the plurality of photovoltaic sub-cells 310.
  • FIG. 2a and FIG. 2b are schematic diagrams showing the planar structure of the photovoltaic cell assembly 300 and the driving module 400, respectively.
  • adjacent photovoltaic sub-cells 310 are connected.
  • the connection between adjacent photovoltaic sub-cells 310 may be a phase of the same.
  • the adjacent photovoltaic sub-cells 310 are connected between each other, and the photovoltaic sub-cells 310 are connected in series between adjacent two rows by connecting two photovoltaic sub-cells 310 located at the same end of the adjacent two rows together; of course, as shown in FIG. 2b
  • the connection between adjacent photovoltaic sub-cells 310 can be realized by connecting two photovoltaic sub-cells 310 adjacent to the same end of the adjacent two columns in the same column.
  • each photovoltaic sub-cell 310 can also be It is connected in series by other connection methods and is not limited here.
  • FIG. 3 is a cross-sectional view taken along line A-A' of FIG. 2a.
  • the first transparent electrode of one of the photovoltaic sub-cells 310 passes through the via of the photovoltaic film 312 of the photovoltaic sub-cell 310 and the other photovoltaic sub-cell 310.
  • the photovoltaic cell assembly 300 may also be in a parallel structure, that is, a plurality of the photovoltaic sub-cells 310 may mutually In parallel, as shown in FIG. 4, the first transparent electrode 311 of each photovoltaic sub-cell 310 is directly connected, that is, the film of the first transparent electrode directly covers the entire substrate, and it is not necessary to form a separate first transparent electrode 311.
  • Graphic, thereby simplifying the preparation process; similarly, the second transparent electrode 313 of each photovoltaic sub-cell is directly connected, that is, the film of the second transparent electrode directly covers the entire substrate, and it is not necessary to form a separate second transparent electrode 313.
  • the array substrate provided by the embodiment of the present invention further includes:
  • the orthographic projection of metal reflective layer 500 on substrate substrate 100 covers the orthographic projection of photovoltaic film 312 on substrate substrate 100 and is located within the light-shielding region. That is, the orthographic projection of the photovoltaic film on the substrate substrate is within the orthographic projection of the metal reflective layer on the substrate, and the metal reflective layer is positive on the substrate The projection is located within the shading area.
  • the metal reflective layer may not be separately provided, and the opaque metal signal line in the light shielding region of the pixel unit or the metal reflection of the gate electrode in the thin film transistor may be directly used to achieve the function of providing the metal reflective layer.
  • the utilization of light energy is relatively low in utilization of light energy compared to an array substrate in which a metal reflective layer is separately provided.
  • the metal reflective layer 500 is located at the pixel unit 200 and the photovoltaic cell assembly 300.
  • the metal reflective layer 500 may be located between the base substrate 100 and the photovoltaic cell assembly 400, or The reflective layer 500 may also be located between the base substrate 100 and the pixel unit 200.
  • the pixel unit 200 and the photovoltaic cell assembly 300 are located on the same side of the substrate substrate 100, and the metal reflective layer 500 may be directly on the second transparent electrode 313.
  • the pattern of the second transparent electrode 313 and the metal reflective layer 500 may be set to be uniform.
  • the second transparent electrode 313 and the metal reflective layer 500 can be formed by one patterning process, thereby simplifying the fabrication process.
  • the pixel unit 200 and the photovoltaic cell assembly 300 are respectively located on two sides of the substrate substrate 100, and the metal reflective layer 500 can be To be directly above the first transparent electrode 311, the pattern of the first transparent electrode 311 and the metal reflective layer 500 may be set to be uniform.
  • the first transparent electrode 311 and the metal reflective layer 500 can be formed by one patterning process, so that the fabrication process can be simplified.
  • the material of the metal reflective layer is preferably aluminum or silver.
  • the material of the metal reflective layer may also be other materials capable of implementing the solution of the present invention. This is not limited.
  • the pixel unit 200 and the photovoltaic cell assembly 300 are located on the same side of the substrate substrate 100, in order to avoid the surface height of the photovoltaic cell module during the preparation process of the pixel unit 200.
  • the difference caused by the inconsistency also includes:
  • a planarization layer 600 is located between the photovoltaic cell assembly 300 and the pixel unit 200.
  • the planarization layer may include a silicon nitride film, a resin film, and a silicon nitride film which are sequentially stacked; or the planarization layer may also include a silicon oxide film which is sequentially stacked. And a resin film and a silicon dioxide film, wherein the resin film is made of a high temperature resistant resin material, which is not limited herein.
  • the pixel unit and the photovoltaic cell assembly are respectively located on both sides of the substrate, in order to protect the photovoltaic cell assembly, it is also required to provide transparency on the outermost side of the photovoltaic cell assembly facing away from the substrate.
  • the protective layer is not mentioned here.
  • the voltage stabilizing current module 700 may be further included in the array substrate provided by the embodiment of the present invention.
  • the battery assembly 300 is electrically connected to the drive module 400 through the regulated current stabilizing module 700.
  • the array substrate shown in FIG. 5a is prepared, and the specific manufacturing process includes the following steps:
  • a pattern of the photovoltaic film is formed in the amorphous silicon film and the microcrystalline silicon film by laser cutting or dry etching.
  • a reflective metal film is deposited on the second transparent conductive oxide film by physical vapor deposition;
  • the material of the reflective metal film is, for example, silver or aluminum;
  • a pattern of the second transparent electrode and the metal reflective layer is formed in the second transparent conductive oxide film and the reflective metal film by a patterning process; the patterning process may be laser cutting or wet etching.
  • the material of the planarization layer is preferably silicon nitride (SiNx) / resin material ( esin ) / silicon nitride (SiNx) or silicon dioxide (SiO2) / resin material (Resin) / silicon dioxide (SiO2)
  • the resin material is made of a high temperature resistant resin material; further, the silicon nitride or silicon dioxide film may be deposited by chemical vapor deposition, and the resin material may be prepared by a spin coating process.
  • a pattern of the pixel unit 200 is formed on the planarization layer 600 as shown in Fig. 5a.
  • the above-mentioned array substrate provided by the embodiment of the present invention can be applied to a liquid crystal display panel, and can also be applied to an organic electroluminescence display device, which is not limited herein.
  • the pixel unit includes a thin film transistor and a metal signal line in the light shielding region, and a pixel electrode located in the light transmitting region.
  • the pixel unit in the array substrate is prior art. No longer.
  • the embodiment according to the present invention can also be applied to the transflective array substrate and the liquid crystal display having the array substrate.
  • the pixel for display of the pixel unit includes a transmission sub-pixel and a reflection sub-pixel, and the light-shielding region further includes an area where the reflection sub-pixel is located.
  • an embodiment of the present invention further provides a liquid crystal display panel, which includes the above array substrate provided by the embodiment of the present invention.
  • the principle of solving the problem is similar to the foregoing array substrate, so the liquid crystal display
  • the liquid crystal display For the implementation of the panel, refer to the implementation of the foregoing array substrate, and the repeated description is omitted.
  • the embodiment of the present invention further provides a display device, which includes the above liquid crystal display panel provided by the embodiment of the present invention, and the display device can be: a mobile phone, a tablet computer, a television, a display, a notebook computer, a digital photo frame. , navigation, etc. Any product or component that has a display function.
  • Other indispensable components of the display device are understood by those of ordinary skill in the art, and are not to be construed as limiting or limiting the invention.
  • the array substrate includes a substrate substrate, a plurality of pixel units arranged on the substrate substrate and arranged in a matrix, and a display signal is provided for each pixel unit.
  • Each of the pixel units is divided into a light transmitting area and a light blocking area, and further includes: a photovoltaic cell assembly electrically connected to the driving module, the photovoltaic cell assembly being disposed between the substrate substrate and the pixel unit, or disposed on the substrate
  • the photovoltaic cell assembly includes a plurality of photovoltaic sub-cells, each of the photovoltaic sub-cells includes a first transparent electrode, a photovoltaic film and a second transparent electrode, which are sequentially stacked; wherein the photovoltaic film is on the substrate
  • the orthographic projection is located in the shading area.
  • the array substrate provided by the embodiment of the invention is provided with a photovoltaic cell assembly electrically connected to the driving module, and the array substrate can convert the light energy of the light-shielding region into electrical energy by using the photovoltaic cell assembly, and output the electrical energy to the driving module.
  • the light energy of the light-shielding region can be effectively utilized, and the utilization ratio of the light energy of the array substrate is improved.
  • the opaque photovoltaic film in the photovoltaic cell module is located in the light-shielding region in the orthographic projection of the substrate, and therefore does not affect the aperture ratio of each pixel unit in the array substrate.

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Abstract

一种阵列基板、液晶显示面板及显示装置，该阵列基板包括衬底基板（100），设置在衬底基板（100）上的多个像素单元（200），为各像素单元（200）提供显示信号的驱动模块；与驱动模块电连接的光伏电池组件（300），光伏电池组件（300）包括多个光伏子电池（310），每个光伏子电池（310）均包括第一透明电极（311），光伏薄膜（312）和第二透明电极（313）；光伏薄膜（312）在衬底基板（100）的正投影位于遮光区域内。由于在该阵列基板中设置了与驱动模块电连接的光伏电池组件（300），所以可以利用光伏电池组件（300）将遮光区域的光能转化为电能，并将电能输出到驱动模块供其使用，从而有效的利用遮光区域的光能。由于光伏薄膜（312）在衬底基板（100）的正投影位于遮光区域内，因此不会影响阵列基板中各像素单元（200）的开口率。

Description

阵列基板、 液晶显示面板及显示装置 技术领域
本发明的实施例涉及一种阵列基板、 液晶显示面板及显示装置。 背景技术
薄膜晶体管液晶显示面板 ( Thin Film Transistor-Liquid Crystal Display, TFT-LCD ) 因体积小， 功耗低、 无辐射等特点， 在当前的显示面板市场占据 了主导地位。 薄膜晶体管液晶显示面板主要由阵列基板， 对向基板， 位于该 两基板之间的液晶分子， 以及背光源组成。 在阵列基板中设置有呈矩阵排列 的多个像素单元， 在各像单元中配置有薄膜晶体管、 金属信号线， 以及像素 电极。在各像素单元中，一般将背光源中的光可以透过的区域称为透光区域， 将背光源中的光不能透过的区域称为遮光区域。 在薄膜晶体管液晶显示面板 中， 像素单元的遮光区域一般与薄膜晶体管和金属信号线所在区域对应， 像 素单元的透光区域一般与像素电极所在区域对应。
目前， 现有的液晶显示面板仅利用了透过透光区域的光能， 而被遮光区 域所遮挡的光能处于浪费的状态， 因此现有的液晶显示面板的光能利用率较 低。 发明内容
本发明实施例提供的一种阵列基板， 包括衬底基板， 设置在所述衬底基 板上且呈矩阵排列的多个像素单元， 以及为各所述像素单元提供显示信号的 驱动模块； 每个所述像素单元均分为透光区域和遮光区域， 还包括：
与所述驱动模块电连接的光伏电池组件， 所述光伏电池组件设置在所述 衬底基板与所述像素单元之间， 或设置在所述衬底基板背离所述像素单元一 侧；
所述光伏电池组件包括多个光伏子电池， 每个所述光伏子电池均包括依 次层叠设置的第一透明电极， 光伏薄膜和第二透明电极； 其中，
所述光伏薄膜在所述衬底基板的正投影位于所述遮光区域内。 本发明实施例提供的上述阵列基板， 由于设置了与驱动模块电连接的光 伏电池组件， 该阵列基板可以利用光伏电池组件将遮光区域的光能转化为电 能， 并将电能输出到驱动模块供其使用， 从而可以有效的利用遮光区域的光 能， 提高阵列基板对光能的利用率。 并且， 光伏电池组件中不透光的光伏薄 膜在衬底基板的正投影位于遮光区域内， 因此， 不会影响阵列基板中各像素 单元的开口率。
为了有效利用遮光区的光能， 本发明实施例提供的上述阵列基板， 还包 括：
位于所述像素单元与所述光伏电池组件之间的金属反射层；
所述光伏薄膜在所述衬底基板的正投影在所述金属反射层在所述衬底基 板上的正投影内， 且所述金属反射层在所述衬底基板上的正投影位于所述遮 光区 i或内。
在一个示例中， 所述像素单元与所述光伏电池组件位于所述衬底基板的 同一侧， 所述金属反射层直接位于所述第二透明电极之上， 所述第二透明电 极与所述金属反射层的图形一致。 这样， 第二透明电极与金属反射层可以通 过一次构图工艺形成， 从而简化制作工艺。
在一个示例中， 所述像素单元与所述光伏电池组件分别位于所述衬底基 板的两侧， 所述金属反射层直接位于所述第一透明电极之上， 所述第一透明 电极与所述金属反射层的图形一致。 这样， 第一透明电极与金属反射层可以 通过一次构图工艺形成， 从而简化制作工艺。
在一个示例中， 为了避免像素单元在制备过程中存在段差， 在本发明实 施例提供的上述阵列基板中， 所述像素单元与所述光伏电池组件位于所述衬 底基板的同一侧， 还包括：
位于所述光伏电池组件和所述像素单元之间的平坦化层。
在一个示例中， 为了使光伏电池组件所转化的电能可以稳定的输送给驱 动模块， 在本发明实施例提供的上述阵列基板中， 还包括： 稳压稳流模块， 所述光伏电池组件通过所述稳压稳流模块与所述驱动模块电连接。
在一个示例中， 为了提高光伏电池组件输出的电能的电压， 在本发明实 施例提供的上述阵列基板中， 多个所述光伏子电池相互串联或并联。
在一个示例中， 为了便于实施， 所述光伏薄膜包括层叠设置的非晶硅薄 膜和微晶硅薄膜。
在一个示例中， 所述遮光区域为所述阵列基板的薄膜晶体管和金属信号 线所在的区域。
在一个示例中， 所述像素单元的用于显示的像素包括透射子像素和反射 子像素， 所述遮光区域还包括所述反射子像素所在的区域。
本发明实施例提供的一种液晶显示面板， 包括本发明实施例提供的上述 任一种阵列基板。
本发明实施例提供的一种显示装置， 包括本发明实施例提供的上述液晶 显示面板。 附图说明
为了更清楚地说明本发明实施例的技术方案， 下面将对实施例的附图作 简单地介绍，显而易见地，下面描述中的附图仅仅涉及本发明的一些实施例， 而非对本发明的限制。
图 la和图 lb分别为本发明实施例提供的阵列基板的结构示意图； 接示意图；
图 3为图 2a中的光伏电池组件沿 A-A'方向的剖面示意图；
图 4为本发明实施例提供的光伏电池组件的结构示意图；
图 5a和图 5b分别为本发明实施例提供的设置有金属反射层的阵列基板 的结构示意图；
图 6a至图 6d分别为本发明实施例提供的阵列基板的制备方法执行各步 骤后的结构示意图。 具体实施方式
为使本发明实施例的目的、 技术方案和优点更加清楚， 下面将结合本发 明实施例的附图， 对本发明实施例的技术方案进行清楚、 完整地描述。显然， 所描述的实施例是本发明的一部分实施例， 而不是全部的实施例。 基于所描 述的本发明的实施例， 本领域普通技术人员在无需创造性劳动的前提下所获 得的所有其他实施例， 都属于本发明保护的范围。 附图中各部件的大小和形状不反映阵列基板的真实比例， 目的只是示意 说明本发明内容。
本发明实施例提供的一种阵列基板， 如图 la和图 lb所示， 包括衬底基 板 100，设置在衬底基板 100上且呈矩阵排列的多个像素单元 200， 以及为各 像素单元 200提供显示信号的驱动模块（图 la和图 lb中未示出驱动模块的 结构） ； 每个像素单元 200均分为透光区域 a和遮光区域 b。 该阵列基板还 包括：
与驱动模块电连接的光伏电池组件 300， 光伏电池组件 300如图 la所示 设置在衬底基板 100与像素单元 200之间， 或如图 lb所示设置在衬底基板 100背离像素单元 200—侧；
光伏电池组件 300包括多个光伏子电池 310， 每个光伏子电池 310均包 括依次层叠设置的第一透明电极 311，光伏薄膜 312和第二透明电极 313;其 中，
光伏薄膜 312在衬底基板 100的正投影位于遮光区域 b内。
本发明实施例提供的上述阵列基板， 由于设置了与驱动模块电连接的光 伏电池组件， 该阵列基板可以利用光伏电池组件将遮光区域的光能转化为电 能， 并将电能输出到驱动模块供其使用， 从而可以有效的利用遮光区域的光 能， 提高阵列基板对光能的利用率。 并且， 光伏电池组件中不透光的光伏薄 膜在衬底基板的正投影位于遮光区域内， 因此， 不会影响阵列基板中各像素 单元的开口率。 结非晶硅薄膜、 双结非晶硅薄膜、 双结微晶硅薄膜或多结叠层薄膜， 或者， 也可以是单晶硅薄膜或多晶硅薄膜等， 当然， 只要是能够实现本发明方案的 光伏薄膜， 都在本发明的保护范围之内。
例如， 在本发明实施例提供的上述阵列基板中， 如图 5a和图 5b所示， 光伏薄膜 312可以包括层叠设置的非晶硅薄膜 3121和微晶硅薄膜 3122， 在 此不做限定。
进一步地， 在具体实施时， 在本发明实施例提供的上述阵列基板中， 非 晶硅薄膜的厚度例如控制在 200nm~300nm之间， 微晶硅薄膜的厚度例如控 制在 1 μ π！〜 3 μ m之间， 在此不做限定。 进一步地， 在本发明实施例提供的上述阵列基板中， 第一透明电极和第 二透明电极的材料可以为透明导电氧化物（TCO )材料， 当然也可以为能够 实现本发明方案的其它材料， 在此不做限定。
进一步地， 在本发明实施例提供的上述阵列基板中， 如图 la和图 lb所 示， 第一透明电极 311邻近衬底基板 100， 第二透明电极 313远离衬底基板 100， 在具体实施时， 第一透明电极 311的厚度例如控制在 1500nm 1800 之间， 第二透明电极 313的厚度例如控制在 lOOnm左右。
为了提高光伏电池组件输出的电能的电压， 在本发明实施例提供的上述 阵列基板中， 如图 2a和图 2b所示， 光伏电池组件 300可以为串联结构， 即 多个光伏子电池 310之间相互串联， 其中， 图 2a和图 2b分别为光伏电池组 件 300与驱动模块 400电连接的平面结构示意图。
在本发明实施例提供的上述阵列基板中， 例如相邻的光伏子电池 310之 间连接， 在具体实施时， 如图 2a所示， 相邻的光伏子电池 310之间连接可以 是同行的相邻光伏子电池 310之间连接， 相邻两行之间光伏子电池 310之间 串联通过将位于该相邻两行的同一个端的两个光伏子电池 310连接在一起实 现； 当然， 如图 2b所示，相邻的光伏子电池 310之间连接可以是同列的相邻 于该相邻两列的同一个端的两个光伏子电池 310连接在一起实现， 当然， 各 光伏子电池 310还可以是通过其他连接方式串联， 在此不做限定。
进一步地， 在本发明实施例提供的上述阵列基板中， 如图 3所示， 在串 联的各个光伏子电池 310中，在同一个光伏子电池 310中，第一透明电极 311 与第二透明电极 313之间不存在短路现象， 且相邻光伏子电池 310中的第一 透明电极 311之间， 以及第二透明电极 313之间均不存在短路现象。
在本发明实施例提供的上述阵列基板中， 相邻的两个光伏子电池 310之 间串联的剖面图如图 3所示， 其中图 3为图 2a沿 A-A'方向的剖面图， 在相 邻的两个光伏子电池 310中， 其中一个光伏子电池 310的第一透明电极通过 贯穿该光伏子电池 310的光伏薄膜 312的过孔与另一个光伏子电池 310的第 当然， 在本发明实施例提供的上述阵列基板中， 为了简化制备工艺， 光 伏电池组件 300也可以为并联结构， 即多个该光伏子电池 310之间可以相互 并联， 如图 4所示， 将各光伏子电池 310的第一透明电极 311直接连接， 即 第一透明电极的薄膜直接覆盖整个衬底基板， 不需要形成单独的每个第一透 明电极 311的图形， 从而简化制备工艺； 同理将各光伏子电池的第二透明电 极 313直接连接， 即第二透明电极的薄膜直接覆盖整个衬底基板， 不需要形 成单独的每个第二透明电极 313的图形，但是该并联结构的光伏电池组件 300 输出的电压值较低。
为了有效利用遮光区的光能， 本发明实施例提供的上述阵列基板， 如图 5a和图 5b所示， 还包括：
位于像素单元 200与光伏电池组件 300之间的金属反射层 500;
金属反射层 500在衬底基板 100上的正投影覆盖光伏薄膜 312在衬底基 板 100的正投影， 且位于遮光区域内。 也就是说， 所述光伏薄膜在所述衬底 基板的正投影在所述金属反射层在所述衬底基板上的正投影内， 且所述金属 反射层在所述衬底基板上的正投影位于所述遮光区域内。 当然， 在具体实施 时， 也可以不用单独设置金属反射层， 直接利用像素单元的遮光区域中的不 透明金属信号线或者是薄膜晶体管中的栅极的金属反射作用， 来达到设置金 属反射层的作用， 但是这样， 对光能的利用率相比单独设置有金属反射层的 阵列基板对光能的利用率相对较低。
在本发明实施例提供的上述阵列基板中， 如图 5a所示， 当像素单元 200 与光伏电池组件 300位于衬底基板 100的同一侧时， 金属反射层 500位于像 素单元 200与光伏电池组件 300之间； 当像素单元 200与光伏电池组件 300 分别位于衬底基板 100的两侧时，如图 5b所示，金属反射层 500可以位于衬 底基板 100与光伏电池组件 400之间， 或者， 金属反射层 500也可以位于衬 底基板 100与像素单元 200之间。
在本发明实施例提供的上述阵列基板中， 如图 5a所示， 像素单元 200 与光伏电池组件 300位于衬底基板 100的同一侧， 金属反射层 500可以直接 位于第二透明电极 313之上， 第二透明电极 313与金属反射层 500的图形可 以设置为一致。 这样在制作时， 第二透明电极 313与金属反射层 500可以通 过一次构图工艺形成， 从而可以简化制作工艺。
或者， 在本发明实施例提供的上述阵列基板中， 如图 5b所示，像素单元 200与光伏电池组件 300分别位于衬底基板 100的两侧， 金属反射层 500可 以直接位于第一透明电极 311之上， 第一透明电极 311与金属反射层 500的 图形可以设置为一致。 这样在制作时， 第一透明电极 311与金属反射层 500 可以通过一次构图工艺形成， 从而可以简化制作工艺。
进一步地， 在具体实施时， 在本发明实施例提供的上述阵列基板中， 金 属反射层的材料优选铝或银， 当然， 金属反射层的材料也可以为能够实现本 发明方案的其他材料， 在此不做限定。
在本发明实施例提供的上述阵列基板中， 如图 5a所示， 像素单元 200 与光伏电池组件 300位于衬底基板 100的同一侧， 为了避免像素单元 200在 制备过程中由于光伏电池组件表面高度不一致而导致的段差， 还包括：
位于光伏电池组件 300和像素单元 200之间的平坦化层 600。
在本发明实施例提供的上述阵列基板中， 平坦化层可以包括依次层叠设 置的氮化硅薄膜、 树脂薄膜和氮化硅薄膜； 或者， 平坦化层也可以包括依次 层叠设置的二氧化硅薄膜、 树脂薄膜和二氧化硅薄膜， 其中树脂薄膜釆用耐 高温的树脂材料制备， 在此不做限定。
在本发明实施例提供的上述阵列基板中， 在像素单元与光伏电池组件分 别位于衬底基板的两侧时， 为了保护光伏电池组件， 还需要在光伏电池组件 背离衬底基板的最外侧设置透明保护层， 在此不做赞述。
为了使光伏电池组件所转化的电能可以稳定的输送给驱动模块， 在本发 明实施例提供的上述阵列基板中， 如图 2a和图 2b所示， 还可以包括： 稳压 稳流模块 700， 光伏电池组件 300通过稳压稳流模块 700与驱动模块 400电 连接。
下面以图 5a所示的阵列基板为例， 对上述阵列基板的制备方法进行说 明。
制备图 5a所示的阵列基板， 具体制作过程包括以下几个步骤：
( 1 )在衬底基板 100上形成第一透明电极 311的图形， 如图 6a所示； 在具体实施时： 首先， 通过脉冲激光沉积、 金属有机物化学气相沉积、 射频 /中频 /直流溅射、 电子束和热反应蒸发、 喷雾热分解、 溶胶-凝胶法、 等离子体化学气相沉积等方法在衬底基板上沉积第一透明导电氧化物薄膜 TCO; 第一透明导电氧化物薄膜的厚度例如控制在 1500nm〜： I800nm之间； 接着， 通过 CH3COOH对第一透明导电氧化物薄膜表面进行湿法刻蚀处 理， 使该第一透明导电氧化物薄膜表面具有绒面结构； 具体地， CH3COOH 浓度控制在 0.5%左右， 湿法刻蚀处理时间例如控制在 20分至 30分之间； 最后， 通过激光切割或湿法刻蚀的方法在该具有绒面结构的第一透明导 电氧化物薄膜中形成第一透明电极的图形。
( 2 )在第一透明电极 311上形成光伏薄膜 312的图形， 如图 6b所示； 在具体实施时： 首先， 通过化学气相沉积方法在第一透明电极上依次沉 积非晶硅薄膜和微晶硅薄膜； 非晶硅薄膜的厚度例如控制在 200nm~300nm 之间， 微晶硅薄膜的厚度例如控制在 1 μ π！〜 3 μ m之间；
然后， 通过激光切割或干法刻蚀的方法在该非晶硅薄膜和微晶硅薄膜中 形成光伏薄膜的图形。
( 3 )通过一次构图工艺在光伏薄膜 312 上同时形成第二透明电极 313 和金属反射层 500的图形， 如图 6c所示；
在具体实施时： 首先，在微晶硅薄膜 3122上沉积第二透明导电氧化物薄 膜 TCO; 第二透明导电氧化物薄膜的厚度例如控制在 lOOnm左右；
接着， 通过物理气相沉积的方法在第二透明导电氧化物薄膜上沉积反射 金属薄膜； 反射金属薄膜的材料例如为银或铝；
最后， 通过一次构图工艺在第二透明导电氧化物薄膜和反射金属薄膜中 形成第二透明电极和金属反射层的图形； 构图工艺可以为激光切割或湿法刻 蚀。
( 4 )在金属反射层 500上沉积平坦化层 600， 如图 6d所示；
在具体实施时，平坦化层的材料优选为氮化硅（ SiNx ) /树脂材料 ( esin ) /氮化硅（ SiNx )或二氧化硅（ Si02 ) /树脂材料（ Resin ) /二氧化硅（ Si02 ) ， 其中树脂材料釆用耐高温的树脂材料； 进一步地， 氮化硅或二氧化硅薄膜可 以釆用化学气相沉积的方法沉积， 树脂材料可以釆用旋涂工艺制备。
( 5 )在平坦化层 600上形成像素单元 200的图形， 如图 5a所示。
像素单元的图形的制作与现有技术一致， 在此不再赘述。 具体地， 经过 上述步骤（1 )至（5 )之后， 得到本发明实施例图 5a所示的阵列基板。
需要说明的是， 本发明实施例提供的上述阵列基板可以应用于液晶显示 面板中， 也可以应用于有机电致发光显示器件中， 在此不做限定。
当本发明实施例提供的上述阵列基板应用于液晶显示面板中时， 在本发 明实施例提供的上述阵列基板中， 像素单元包括位于遮光区域内的薄膜晶体 管和金属信号线， 以及位于透光区域的像素电极， 具体地， 阵列基板中的像 素单元为现有技术， 在此不再赘述。
上述仅仅以遮光区域为薄膜晶体管和金属信号线所在的区域为例进行了 描述， 然而， 根据本发明的实施例也可以应用于半透半反型的阵列基板以及 具有该阵列基板的液晶显示器。 此时， 像素单元的用于显示的像素包括透射 子像素和反射子像素， 遮光区域还包括反射子像素所在的区域。
基于同一发明构思， 本发明实施例还提供了一种液晶显示面板， 包括本 发明实施例提供的上述阵列基板， 由于该液晶显示面板解决问题的原理与前 述一种阵列基板相似， 因此该液晶显示面板的实施可以参见前述阵列基板的 实施， 重复之处不再赘述。
基于同一发明构思， 本发明实施例还提供了一种显示装置， 包括本发明 实施例提供的上述液晶显示面板， 该显示装置可以为： 手机、 平板电脑、 电 视机、 显示器、 笔记本电脑、 数码相框、 导航仪等任何具有显示功能的产品 或部件。 对于该显示装置的其它必不可少的组成部分均为本领域的普通技术 人员应该理解具有的， 在此不做赞述， 也不应作为对本发明的限制。 该显示 装置的实施可以参见上述液晶显示面板的实施例， 重复之处不再赘述。
本发明实施例提供的一种阵列基板、 液晶显示面板及显示装置， 该阵列 基板包括衬底基板， 设置在衬底基板上且呈矩阵排列的多个像素单元， 以及 为各像素单元提供显示信号的驱动模块； 每个像素单元均分为透光区域和遮 光区域， 还包括： 与驱动模块电连接的光伏电池组件， 光伏电池组件设置在 衬底基板与像素单元之间， 或设置在衬底基板背离像素单元一侧； 光伏电池 组件包括多个光伏子电池， 每个光伏子电池均包括依次层叠设置的第一透明 电极， 光伏薄膜和第二透明电极； 其中， 光伏薄膜在衬底基板的正投影位于 所述遮光区域内。 本发明实施例提供的上述阵列基板， 由于设置了与驱动模 块电连接的光伏电池组件， 该阵列基板可以利用光伏电池组件将遮光区域的 光能转化为电能， 并将电能输出到驱动模块供其使用， 从而可以有效的利用 遮光区域的光能， 提高阵列基板对光能的利用率。 并且， 光伏电池组件中不 透光的光伏薄膜在衬底基板的正投影位于遮光区域内， 因此， 不会影响阵列 基板中各像素单元的开口率。 以上所述仅是本发明的示范性实施方式， 而非用于限制本发明的保护范 围， 本发明的保护范围由所附的权利要求确定。
本申请要求于 2014年 1月 9 日递交的中国专利申请第 201410010209.6 号的优先权， 在此全文引用上述中国专利申请公开的内容以作为本申请的一 部分。

Claims

权利要求书
1、 一种阵列基板， 包括衬底基板，设置在所述衬底基板上且呈矩阵排列 的多个像素单元， 以及为各所述像素单元提供显示信号的驱动模块； 每个所 述像素单元分为透光区域和遮光区域， 其中， 所述阵列基板还包括：
与所述驱动模块电连接的光伏电池组件， 所述光伏电池组件设置在所述 衬底基板与所述像素单元之间， 或设置在所述衬底基板背离所述像素单元一 侧；
所述光伏电池组件包括多个光伏子电池， 每个所述光伏子电池均包括依 次层叠设置的第一透明电极， 光伏薄膜和第二透明电极； 其中，
所述光伏薄膜在所述衬底基板的正投影位于所述遮光区域内。
2、 如权利要求 1所述的阵列基板， 还包括：
位于所述像素单元与所述光伏电池组件之间的金属反射层；
所述光伏薄膜在所述衬底基板的正投影在所述金属反射层在所述衬底基 板上的正投影内， 且所述金属反射层在所述衬底基板上的正投影位于所述遮 光区 i或内。
3、如权利要求 2所述的阵列基板， 其中， 所述像素单元与所述光伏电池 组件位于所述衬底基板的同一侧， 所述金属反射层直接位于所述第二透明电 极之上， 所述第二透明电极与所述金属反射层的图形一致。
4、如权利要求 2所述的阵列基板， 其中， 所述像素单元与所述光伏电池 组件分别位于所述衬底基板的两侧， 所述金属反射层直接位于所述第一透明 电极之上， 所述第一透明电极与所述金属反射层的图形一致。
5、如权利要求 1所述的阵列基板， 其中， 所述像素单元与所述光伏电池 组件位于所述衬底基板的同一侧， 所述阵列基板还包括：
位于所述光伏电池组件和所述像素单元之间的平坦化层。
6、 如权利要求 1-5任一项所述的阵列基板， 还包括： 稳压稳流模块， 所 述光伏电池组件通过所述稳压稳流模块与所述驱动模块电连接。
7、 如权利要求 1-6任一项所述的阵列基板， 其中， 多个所述光伏子电池 相互串联或并联。
8、 如权利要求 1-7任一项所述的阵列基板， 其中， 所述光伏薄膜包括层 叠设置的 ^晶硅薄膜和微晶硅薄膜。
9、 如权利要求 1-8任一项所述的阵列基板， 其中， 所述遮光区域为所述 阵列基板的薄膜晶体管和金属信号线所在的区域。
10、 如权利要求 9所述的阵列基板， 其中， 所述像素单元的用于显示的 像素包括透射子像素和反射子像素， 所述遮光区域还包括所述反射子像素所 在的区域。
11、 一种液晶显示面板， 包括如权利要求 1-10任一项所述的阵列基板。
12、 一种显示装置， 包括如权利要求 11所述的液晶显示面板。
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