WO2015077925A1 - 一种蓝宝石热复合方法 - Google Patents

一种蓝宝石热复合方法 Download PDF

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Publication number
WO2015077925A1
WO2015077925A1 PCT/CN2013/087882 CN2013087882W WO2015077925A1 WO 2015077925 A1 WO2015077925 A1 WO 2015077925A1 CN 2013087882 W CN2013087882 W CN 2013087882W WO 2015077925 A1 WO2015077925 A1 WO 2015077925A1
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Prior art keywords
sapphire
sheet
polishing
layer
crystal
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PCT/CN2013/087882
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English (en)
French (fr)
Inventor
吴云才
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浙江上城科技有限公司
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Priority to PCT/CN2013/087882 priority Critical patent/WO2015077925A1/zh
Publication of WO2015077925A1 publication Critical patent/WO2015077925A1/zh

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
    • B32B7/04—Interconnection of layers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B9/00—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
    • B32B9/04—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00 comprising such particular substance as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/20—Aluminium oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/06—Joining of crystals

Definitions

  • the present invention relates to sapphire processing, compounding, and applications.
  • sapphire Since sapphire has a hardness close to that of diamond, Mohs hardness is 9. Excellent visible and infrared light, UV transmittance T> 85% (400-800 nm wavelength). And has excellent bending strength and elastic modulus, so it is used in high-end mobile phone screen main lens, watch lens, laser window, camera protection lens, laser barcode scanner window, touch screen protection cover.
  • single-layer sapphire sheets are used, and the two-layer or two-layer composite processing method involved here improves the processing yield and the antistatic pressure and impact strength of the sheet.
  • Sapphire has anisotropy, and its sapphire crystal structure has a plurality of different crystal faces. Although each crystal face of sapphire is harder than other minerals, some crystal faces have other different characteristics.
  • C-plane sapphire has good optical transmittance and fracture toughness
  • sapphire has higher compressive strength and wear resistance than other sapphire.
  • the R- and M-side sapphires also have other advantages.
  • U.S. Patent No. 6,130,236, 699 discloses a sapphire laminate structure comprising: a first layer of sapphire sheets having a first crystal plane orientation forming a major surface of a sapphire laminate structure, and a second layer of sapphire sheets having a second crystal plane orientation Forming a second major plane of the sapphire laminate structure, the two layers of sapphire sheets are fused together to form a sapphire laminate structure. Applicants believe that the above scheme is impossible to achieve. Sapphire belongs to the crystal structure.
  • the characteristics of the crystal are certain. Melting point, once it is greater than the melting point, the material will melt. If the original shape is not maintained, the lattice collapse will occur, and the solid flaky form of the sapphire will not be maintained. Once the upper and lower sapphire pieces are fused, the material will spontaneously nucleate and become polycrystalline when the material melts, and its crystal orientation cannot be maintained. A uniform single crystal, so the sapphire laminate structure obtained by this method cannot maintain the shape of the original sheet and cannot be used for a touch screen.
  • the processing always avoids the direction of the joint surface to prevent crack generation and expansion.
  • the side should be at 45 degrees with the angle of the m-axis. This avoids the vertical deviation from the 0, r and m axes of the sapphire crystal and is not easily damaged when subjected to external force.
  • the crystal faces of the two side faces of such a green block have an angle of 45 degrees with respect to the c-axis and the m-axis.
  • the side-angle deviation is detected, since it is not a standard crystal face, the off-angle cannot be measured by an X-ray crystallizer.
  • the side surface of the sapphire wafer has a 45 degree angle with the crystal axis, it is impossible to directly detect the angle by the X-ray diffractometer.
  • the manufacturer of the 45 degree angle is exempt from inspection during the manufacturing process.
  • the 45-degree angle deviation has a great influence on the strength of the product, so there is an urgent need for a measurement method for solving the problem of measuring the off-angle of the side (cut surface).
  • the touch screen is an input device, which can conveniently realize the interaction between the human and the computer and other portable mobile devices.
  • the functional area of the touch screen can be divided into a window-shaped touch area and a non-touch area border, and a flexible circuit board that provides electrical connection.
  • FPC and data processing chip IC chip In recent years, capacitive touch screens based on indium tin oxide (ITO) transparent conductive films have been widely used in mobile internet devices such as smart phones and portable tablets.
  • ITO indium tin oxide
  • the hierarchical structure of the OGS capacitive touch screen comprises: a glass cover plate; an ink layer printed on a lower side surface of the glass cover plate in a non-window area; a transparent conductive layer (ITO layer) continuously formed on the underside of the glass cover plate and the ink layer An electrode layer (connection line) electrically connected to the transparent conductive layer is formed in the non-window region; and an insulating protective layer is bonded through the OCA optical adhesive.
  • the OGS structure capacitive touch screen directly forms the conductive and sensing electrodes on the back of the high-hardness protection glass cover, and uses the same glass to simultaneously serve the dual functions of touch protection and touch sensing.
  • the existing touch screen glass cover is made of tempered plexiglass.
  • the chemically strengthened tempered glass has higher hardness, its hardness is still limited. It is easy to form scratches on the surface of the panel during use.
  • a protective film needs to be attached to the screen of the mobile phone.
  • the increase in the protective film not only affects the transmittance of the touch panel, but also the protective film itself is more likely to form a slip.
  • the mobile phone Take the mobile phone as an example. From the start to the upgrade and update for three years, most of the time (may be two and a half years or even longer), the user is faced with a scratch-resistant protective film. What can be seen is that it has been costly and difficult to develop and improve the touch screen, and to improve its hardness and transparency little by little. However, the results are only reflected in the laboratory.
  • the only way to solve this problem is to seek to increase the hardness of the glass cover to a hardness or strengthening process that exceeds the vast majority of user-accessible materials, or to seek a hardness that exceeds the hardness of most user-accessible materials.
  • the new material replaces the tempered plexiglass, allowing the user to completely get rid of the use of the screen protector film.
  • Sapphire is a crystal that is second only to diamonds, which is much larger than ordinary tempered glass. Moreover, high-purity (for example, 99% or more) sapphire has high optical transmittance and low scattering, which can effectively block the diffusion of light. In addition, sapphire has better radiation resistance and high thermal conductivity than ordinary glass. , high chemical stability, strong acid resistance, strong alkali, and many other advantages.
  • a sapphire sheet shape for an electronic touch panel has at least one outer contoured corner or at least one aperture.
  • Outer contour fillets and holes include, but are not limited to, semi-circular and circular holes, but also curved and square holes, oval holes.
  • sapphire thickness 0.1 ⁇ 1.5mm
  • shape requirements etc.
  • CNC machining of sapphire is an indispensable step to achieve the required requirements.
  • the sapphire sheet is processed correspondingly to release its processing stress, improve material strength and impact resistance.
  • the yield of sapphire sheets below 1.5mm is not high and easy to break.
  • the prior art cannot process sapphire sheets of 0.5mm or less by CNC numerical control equipment.
  • the processing time is too long, the corners are easy to stress concentrated, and the chipping or even chipping occurs.
  • Chinese Patent Publication No. 103111434A discloses a final cleaning process for sapphire processing, comprising the steps of: a: isopropanol cleaning; b: ethanol cleaning; c: deionized water cleaning; d: ammonia cleaning; e: deionized water cleaning: f : Phosphoric acid cleaning; g : Deionized cleaning; h : Hydrofluoric acid cleaning; i : Deionized water cleaning; j : Deionized water cleaning. After washing, use a dryer to dry.
  • the technical solution disclosed by the invention can effectively remove residual polishing liquid, organic dirt and metal ions after polishing.
  • the invention adopts the above technical solution, and can effectively remove organic substances, inorganic substances, metal ions and the like remaining on the surface of the wafer, thereby avoiding prevention of repeated cleaning, and greatly improving the working efficiency of the D.
  • the above method involves more cleaning agent components, which is liable to cause secondary pollution.
  • the drying can only be performed once, and the efficiency is low.
  • the cleaning waste liquid has a great influence on the environment, and currently there is a lack of a good cleaning effect and high efficiency.
  • the artificially grown sapphire has good wear resistance, hardness is second only to diamond reaching Mohs class 9, and sapphire compactness makes it have a large surface tension. These two characteristics are very suitable for electronic touch panels such as mobile phones.
  • artificially grown sapphire and sapphire flakes have higher brittleness and lower impact resistance, which limits their use.
  • the artificially grown crystal has a large stress, has a symmetrical cracking surface, and will be self-fragmented with a slight tapping, which is not conducive to arbitrary cutting processing. In order to meet the special requirements of optical devices, it is indispensable for crystal annealing.
  • the annealing process that is often used has some stages of temperature rise and temperature reduction, the temperature control program is complicated and the cycle is long; and the other does not completely remove the stress generated during the processing of the gemstone, resulting in poor processing in the later stages. It increases the production cost or reduces the yield of gemstone chips.
  • CMP chemical mechanical polishing
  • the sapphire used for the touch panel has a relatively high surface quality.
  • the polishing process of the sapphire-based touch panel is performed by a regular polishing method, which is not effective.
  • the existing sapphire products are thicker in thickness and relatively strong in relative strength.
  • the conventional double-sided polishing equipment is used to process the product into a thinner parade wheel (clamp).
  • the thickness of sapphire is also thinner and thinner.
  • the current development direction of mobile phones is large screen, ultra-thin and low weight, and the density of sapphire is large. The larger the weight, the heavier the relative weight.
  • the thickness of the sapphire can only be reduced. It is suitable to control the thickness of the gemstone below 0.7mm, such as thickness of 0.5mm, 0.4mm and 0.3mm. .
  • the thickness of the sapphire is thinner, the thickness of the polishing parade will also change. Since the existing parade wheel is made of metal material, when the thickness is reduced, especially after the reduction to 0.5mm or less, the strength is seriously insufficient. It is easy to damage under the condition of polishing high pressure and high speed, resulting in extremely high product breakage rate, and even the entire batch of products is scrapped. Especially for large panels with a thickness of less than 0.5mm and a length of more than 120mm and a width of more than 55mm, it is more difficult to use traditional double-sided processing. The larger the area, the lower the thickness, so that the whole sheet is subjected to polishing. Description
  • the pressure is much larger than the small panel, and the polishing cloth itself is relatively soft and easy to compress, so the larger the sapphire sheet, the greater the amount of pressure deformation, and the more easily broken.
  • the requirement for the anti-fingerprint effect of glass materials is that the water contact angle reaches 115°.
  • anti-fingerprint treatment which can improve the anti-staining property of the screen and improve the hand feeling.
  • there is a lack of a sapphire film anti-fingerprint treatment method there is a lack of a sapphire film anti-fingerprint treatment method.
  • the overall structure of the sapphire is not ergonomic, and the edges are only subjected to straight chamfering (such as CO.lmm straight chamfer). , and the sides of the straight chamfer have obvious edges and corners, which are easy to cause chipping and chipping during the use of the mobile phone, and easy to cut hands, and the hand feel is not good when used.
  • the present invention provides a sapphire thermal composite process that solves the technical problems of single sapphire edges, cracking, and even cracking.
  • a single-layer sapphire crystal sheet has a textured surface in the process, the crystal material itself will collapse along a certain crystal direction of the joint surface during the processing and use. Cracks, even cracks. This is an inherent property of crystalline materials.
  • the present invention proposes a composite scheme of multilayer sheets, which utilizes the recombination of crystals to different sheets to increase the strength of the product, and is more suitable for The use of large-size mobile phone screens and touch tablets and military laser windows; solves the application limitations due to strength problems, allowing gemstone sheets to be made thinner, lighter and with superior performance.
  • a sapphire thermal composite method comprising the following steps:
  • Step one polishing the composite surface of the two or more sapphire sheets to be composited, the surface roughness Ra of which is less than 1 nm, the flatness TTV ⁇ 5 micrometers, the LTV ⁇ 1.5 micrometers, and the warpage ⁇ 10 micrometers;
  • Step 2 the polished sapphire sheet is subjected to crystal orientation thermal recombination according to different crystal plane orientation or crystal orientation of the side surface; thermal compositive condition of the sapphire sheet: sapphire sheet is composited in a high temperature furnace, composite Temperature above 1500 ° C below the melting point of sapphire
  • sapphire sheets are bonded to sapphire sheet molecules under certain conditions of the above-described schemes in an environment below their hot melt temperature due to the increased thermal motion between the molecules.
  • the surface roughness, flatness, LTV and warpage of sapphire sheets are closely related to the rate of thermal composite.
  • the principle may be that the above factors affect the physical distance between the two sheets, which in turn affects the molecules between the sapphire sheets. Bonding process.
  • the polished surfaces of the sapphire sheets are vertically placed in close proximity to the molybdenum crucible of the high temperature furnace.
  • the advantage of being placed vertically is that (please add) the sheet is not prone to deformation and can be quickly compounded at high temperatures.
  • the sapphire sheet is horizontally stacked on a gemstone support plate having a flatness and a uniform sapphire sheet, but the support plate is not polished, and the support plate is placed as a carrier in the molybdenum crucible of the high temperature furnace.
  • the advantage of this horizontal placement is (please add) because the upper and lower pieces of the gemstone that need to be composited produce a positive pressure under the force of gravity, the surface is easy to stick and the composite is produced at a lower temperature.
  • the sapphire sheet is composed of a first sapphire sheet and a second sapphire sheet, wherein the first sapphire sheet is oriented in the a direction, and the second sapphire sheet is oriented in the c direction.
  • the sapphire sheet consists of a sapphire sheet and a sapphire sheet.
  • the sapphire film consists of a center piece and four corner pieces. The center piece and the corner piece are in the same area as the sapphire piece.
  • the center piece is a prismatic piece
  • the corner piece is a triangular piece having a chamfered corner at a corner.
  • the surface crystal plane of the center piece is in the a direction, the c direction or the r direction, and the surface layer surface of the sapphire sheet is different from the surface layer surface of the center sheet, and the edge crystal orientation of the corner sheet and the edge of the sapphire sheet The crystal faces are different.
  • the edge of the corner piece has a crystal orientation in the m direction.
  • the heating and cooling speed should be less than 200 ° / h, so as not to cause thermal shock to break.
  • the furnace pressure is controlled at a negative atmospheric pressure, and the shielding gas may be helium, argon or nitrogen to protect the furnace from oxidation.
  • the material In order for the material to bond well, it must be above 1500 degrees Celsius, but below the melting point of the stone by 2050 degrees Celsius. If the crystal material is higher than the melting point, the material will be melted and scrapped. When the holding time is 1 ⁇ 15 hours, the polished surface of the gemstone can be bonded and bonded together.
  • the composite surface of two or more layers of sapphire sheets to be composited is first polished to have a surface roughness Ra of less than 1 nm, a flatness of TTV ⁇ 5 ⁇ m, an LTV of ⁇ 1.5 ⁇ m, and a warpage of ⁇ 10 ⁇ m.
  • a polished surface can be well fitted, so that there is no wedge angle after the composite and the interference ring affects the appearance of the product to cause defects.
  • the two adjacent layers of the two or more layers of the gemstone sheet used herein have different crystal planes or different crystal orientations of the side surfaces, such as the crystal plane of the first sheet. It is a direction in which the second piece is the c direction; and the first piece of the crystal face is the a direction, but the lateral direction is 45 degrees from the m axis, and the crystal plane of the second piece is the a direction, but the lateral direction is the r axis direction. If two or more layers are required, only two adjacent layers can be used to achieve the effect.
  • the first solution is to superimpose the polished surface to be conformed, and do not need to be composited without polishing, so that the bonding cannot be removed.
  • the sheets to be composited can be all solid, which facilitates the complete contact of the polished surface and facilitates high temperature bonding.
  • the second option is to stack the sheets to be laminated on a gemstone support plate that is as flat as the film, but the support plate should not be polished to avoid sticking to the product.
  • the support plate is then placed as a carrier in the molybdenum crucible of the high temperature furnace, so that the interlayer pressure is more conducive to the film bonding.
  • the heating and cooling rate should be less than 200 ° / h to avoid breakage caused by thermal shock.
  • the furnace pressure is controlled at minus atmospheric pressure.
  • the shielding gas may be helium, argon or nitrogen to protect the furnace from oxidation.
  • the material to bond well it must be above 1500 degrees Celsius, but below the melting point of the stone by 2050 degrees Celsius. If it is higher than the melting point, the crystalline material will be melted and scrapped.
  • the holding time is 115 hours, and the polished surface of the gemstone can be bonded together.
  • Two-layer or two-layer gemstone sheets bonded together by high-temperature bonding are processed and polished to meet the technical requirements of the workpiece.
  • the invention also provides a measuring method for detecting the deviation angle of the cutting surface, and the method of using the chamfering method combined with the X-ray diffractometer and the projector to calculate the side angle deviation to ensure the high strength consistency of the product.
  • the measuring method for detecting the off-angle of the cutting surface when the sapphire crystal is cut characterized in that the measuring method comprises the following steps: Step 1: First, using a polarimeter, an X-ray crystallizer on the sapphire ingot with a large surface a side The crystal orientation meter detects the c-axis and the m-axis; and draws the required size of the block in the direction in which the c-axis and the m-axis are at an angle of 45 degrees;
  • Step 2 Cut the ingot on the single-line cutting machine into a blank of the size set according to step one, and then put it on the surface grinding machine to pour a chamfer of 45 degrees.
  • the size of the chamfer does not affect the processing allowance of the wafer, chamfering Is c-plane or m-plane;
  • the corresponding blank front and back surfaces of the off-angle detected by the x-ray crystallographic diffractometer correspond to the front and back sides of the off-angle at the time of projection.
  • the off-angle of the sapphire crystal can be measured more accurately, and a cutting product with better strength can be obtained.
  • Another object of the present invention is to provide a touch screen having a higher hardness.
  • a sapphire OGS touch panel comprising: an upper sapphire cover, a middle touch sensor, and a lower insulation protection layer, wherein the sapphire cover comprises an edge non-touch area and an intermediate touch area, and the touch sensor is attached to the cover Below the touch area of the board, a non-touch area of the sapphire cover is provided with a light shielding material layer, and a connection line between the touch sensor and the FPC is attached under the light shielding material layer, and the insulation protection layer covers the touch sensor and the connection line from below.
  • the sapphire cover is composed of two layers of sapphire sheets with different crystal plane orientations, the upper sapphire layer is a C-plane sapphire layer, and the lower sapphire layer is a A-side sapphire layer.
  • the light shielding material layer is an ink layer printed under the non-touch area of the sapphire substrate.
  • the touch sensor is a projected capacitive sensor formed based on a double-layer ITO conductive film etching process.
  • the present invention processes sapphire into a sheet suitable as a touch panel substrate by a process such as slicing and composite processing of sapphire, and improves physical properties by composite processing. Since the sapphire hardness is higher than most minerals, it is difficult for smart devices such as mobile phones to scratch scratches on the touch screen cover made of sapphire material during daily use. Using a touchpad cover made of sapphire crystal material, users can get rid of the film. The advantages of high transparency and low reflection of the touch screen itself are fully utilized. Bring a perfect user experience to your regular use.
  • the upper sapphire layer with C-plane orientation has higher hardness
  • the lower layer has a higher rupture modulus A-plane oriented sapphire layer, so that the sapphire-based touch screen cover can exert the high hardness characteristics of sapphire while still With higher strength, the touch screen finished product has stronger anti-fall ability.
  • Another object of the present invention is to provide a method for fabricating a sapphire OGS touch panel for the sapphire touch panel described above, which is characterized in that it comprises the following steps:
  • the first piece is A side sapphire piece
  • the second piece is C face sapphire piece
  • the first piece of sapphire piece is ground surface Joining the honed surface of the second sapphire sheet to obtain a composite sapphire substrate semi-finished product
  • the upper and lower surfaces of the semi-finished product of the composite sapphire substrate and the side edges are ground to obtain a sapphire substrate.
  • the orientations of the upper and lower surfaces of the sapphire substrate are respectively C-plane orientation and A-plane orientation;
  • the transparent conductive layer film is then patterned by a glue coating, an exposure, a development, a hard film, an etching, and a film removal process;
  • the FPC with the touch IC chip is electrically connected to the electrode pins by hot pressing to form a final OGS touch screen.
  • the sapphire sheet is composed of a sapphire sheet and a sapphire film
  • the sapphire film is composed of a center piece and four corner pieces, and the center piece and the corner piece are combined in the same area as the sapphire piece.
  • the two corners of the corner piece have a straight chamfer.
  • the effect of the right angle chamfer is to change the contact between the corner pieces from point contact to line contact, which improves the shear resistance of the composite structure.
  • the center piece is a prismatic piece
  • the corner piece is a triangular piece having a chamfered corner at a corner.
  • the processing process of the sapphire touch panel of the present invention increases the manufacturing process of the sapphire substrate, but omits the two chemical strengthening processes, and is no more than the processing technology of the existing glass panel. complex. But you can get better wear and scratch resistance.
  • a touch screen based on a structure other than OGS such as a G/G structured touch screen
  • a G/G structured touch screen can be applied to a sapphire sheet in a G/G structure touch screen. Used as the top cover.
  • Another object of the present invention is to provide a method of processing a sapphire sheet.
  • the process requires the use of a binder to bond multiple sapphire sheets to increase the thickness, thereby increasing the material strength of the single sapphire sheet; then using CNC numerical control equipment, CNC machining of the bonded sapphire sheet is performed. High-speed grinding, low-feed processing of sapphire; and a non-round hole work process for sapphire sheets.
  • a method for processing a sapphire sheet characterized in that the processing method comprises the following steps:
  • Step one heating a plurality of sapphire sheets, applying an adhesive to the surface of the sapphire sheet, laminating and bonding the sapphire sheets, and cooling;
  • step two the bonded sapphire block is placed on a numerically controlled machine tool for grinding and punching. Combine thinner sapphire sheets into a thicker
  • ⁇ can be ground by the fixture of the existing CNC machine tool, which solves the problem of thickness limitation of sheet processing.
  • sapphire sheets with a thickness of 0.1mm can be processed.
  • the main components of the binder are modified epoxy resins and amino polyethers.
  • the binder is a polar binder whose main component is a modified epoxy resin and an amino polyether.
  • the adhesives in the above two solutions can provide sufficient adhesion when bonding, and can be washed away in a specific washing liquid, which can achieve multiple grinding of the multilayer sheet; the polarity characteristics are more easily washed. Deionization elution.
  • the punching comprises a circular hole made inside the sapphire sheet and a non-circular hole with a curved chamfer.
  • the hole making process of the non-circular hole is as follows: draw a marking on the surface of the sapphire sheet, and select a circular drill bit Through-hole punching at the end of the marking line;
  • the drill bit moves horizontally at a high speed to grind the low feed to achieve the connection operation of the split line segment.
  • the length of the line segment is not more than 2 to 4 times the diameter of the drill bit.
  • the length of the split section is equal to twice the diameter of the drill.
  • the inventors have found that the proportional relationship between the length of the segment and the diameter of the drill is related to the existence of the perforation yield. The inappropriate proportional relationship will cause the boundary to be uneven and the edge collapse rate to rise.
  • step C of the hole making process the bit moves laterally with a horizontal inclination of 10° to 45° to realize the connecting operation of the line segment.
  • step C of the hole making process the two drill bits are laterally moved relative to each other with a horizontal inclination of 10° 45° to realize the connecting operation of the line segments.
  • the two drill bits are laterally moved in a manner of 10° ⁇ 45° and 135 ° 170° horizontal inclination to realize the connecting operation of the line segments.
  • Another object of the present invention is to provide a cleaning process for an optical grade sapphire touch panel, which can clean the product by controlling the surface of the product with saponification and emulsification by using an alkaline cleaning agent to control the surface cleanliness of the workpiece. . Cleaning with alkaline liquids minimizes equipment damage and meets the surface quality of the product. At the same time, multiple sapphire pieces can be dried at the same time, and the number can reach 40 pieces to 100 pieces, which greatly improves the cleaning efficiency.
  • the present invention cleans the product by a multi-slot ultrasonic cleaning method.
  • a cleaning method for a sapphire touch panel which is characterized by the following steps:
  • a cleaning method for a sapphire touch panel which is characterized by the following steps:
  • the cleaning basket containing the sapphire touch panel workpiece to be cleaned is placed in a cleaning tank of the multi-tank ultrasonic cleaning machine for stepwise cleaning, wherein the first tank and the second tank are filled with alkaline cleaning liquid, the third tank, the fourth tank,
  • the 5th, 6th and 7th tanks contain pure water
  • the 8th, 9th and 10th tanks contain IPA solution
  • the 11th tank uses kerosene to dry, of which the 1st, 2nd and 3rd tanks The temperature is 75 degrees, and the 11th bath temperature is 110 degrees.
  • the first tank is a potassium hydroxide solution having a mass fraction of 20%
  • the second tank is a sodium sulfate solution having a mass fraction of 0.02%
  • the IPA solution is pure isopropanol.
  • first tank temperature 75 degrees, cleaning time 180 seconds
  • second tank temperature 75 degrees, cleaning time 120 seconds
  • third tank temperature 75 degrees, cleaning time 180 seconds
  • 4th tank room temperature, Spray time 30 seconds
  • 5 ⁇ 10 tank room temperature, cleaning time 60 seconds
  • 11th tank temperature 110 degrees, drying time 30 seconds.
  • the first tank is a potassium hydroxide solution having a mass fraction of 20%
  • the second tank is a sodium carbonate solution having a mass fraction of 0.01%
  • the first tank is a sodium hydroxide solution having a mass fraction of 15%
  • the second tank is a potassium dihydrogen phosphate solution having a mass fraction of 0.02%.
  • a mixed cleaning agent consisting of a mass fraction of 20% potassium hydroxide solution and a mass fraction of 0.02% sodium sulfate solution in a ratio of 1:2; the first tank is a sodium sulfate solution having a mass fraction of 0.02%.
  • the sapphire touch panel obtained according to the cleaning process of the present invention has no visible stains and oil stains on the surface, and reaches 100%.
  • the cleaning solution involves less detergent components, and the cleaning waste liquid does not have a large impact on the environment, the amount of product cleaning increases, and the cleaning efficiency is improved.
  • Another object of the present invention is to provide a convenient and practical annealing method in the sapphire processing. Mainly used for cutting and grinding sapphire wafers. Instruction manual
  • the annealing treatment of the sapphire wafer can effectively remove the processing stress during the cutting and grinding process.
  • the processing stress of the wafer annealed by the method is substantially eliminated, the annealing of the wafer is uniform, and the warpage of the wafer after annealing is small, which is favorable for post-polishing processing.
  • the annealing method consists of the following steps:
  • Step one placing the sapphire crystal in an annealing furnace to close the furnace cavity; vacuuming to remove air and mixed impurities in the furnace cavity, and continuously filling with high-purity nitrogen for protection, and the nitrogen flow rate is stabilized at 5 ⁇ 10 L/min;
  • step two the temperature is gradually increased from 8 hours to 1450 ° C, and the heating rate is 3 ° C / min. At this heating rate, the crystal is heated uniformly, reaching the set temperature, step three, keeping the temperature at 1450 for 8 hours;
  • Step 4 set the slow cooling, the cooling rate is 1.25 °C / min, the program is set to cool for 16 hours from 1450 ° C to 250 ° C, after 250 ° C, the program is closed, the furnace is still filled with nitrogen, cooling At 150 ° C, the nitrogen is turned off and the furnace is naturally cooled.
  • the annealing cycle is short, which can improve production efficiency and reduce production cost
  • the invention has great advantages, can improve the yield rate of the product, and has considerable economic benefits.
  • the nitrogen gas is continuously charged and the flow rate is stabilized, which provides a clean and stable annealing environment for the sapphire wafer.
  • the nitrogen gas is continuously supplied during the heating process and the temperature is raised at a proportional rate, which reduces unnecessary step-by-step heat preservation steps, which not only does not affect the annealing quality of the wafer, but also reduces the annealing time and improves the production efficiency.
  • the product has a process of stress release.
  • the cooling rate is slow, and continuous nitrogen gas is beneficial to stabilize the cooling rate and provide a better cooling environment.
  • Another object of the present invention is to provide a polishing and thinning process for an optical grade sapphire touch panel, which can control the thinning rate of a workpiece by grinding pressure, grinding disk rotation speed, abrasive particle size, abrasive concentration, and abrasive flow rate, Surface damage layer depth. To improve the yield and the surface quality of the finished product.
  • the present invention provides a two-side grinding method for a sapphire touch panel: the sapphire sheet is placed between the upper and lower honing discs for grinding, and the boron carbide polishing liquid is supplied between the upper and lower grinding discs, and the pressure is controlled. 200KG-300KG, control speed is 20-30rpm/min. Grinding with a boron carbide (Mohs hardness of 9.3), a pressure of 200KG-300KG, and a rotational speed of 20-30 rpm/mm, grinding in a corundum grinding disc.
  • the boron carbide (chemical formula B4C) is a ceramic material having a Mohs hardness of 9.3, which is slightly larger than the hardness of the corundum, and is used as an abrasive material to grind the sapphire sheet to maintain a high thinning rate while effectively preventing the surface.
  • the thickness of the damage layer is too large.
  • the sapphire touch panel obtained by the grinding process according to the present invention has a one-time pass rate of more than 95%, a surface roughness of less than 6 u, and a TTV of less than 10 u.
  • variable speed grinding method which comprises, according to the above grinding method, a first grinding step and a second grinding step which are successively performed, wherein ,
  • the first grinding step the pressure is controlled at 280-300KG, the upper and lower grinding discs rotate at the same speed, the rotation speed is controlled at 20-22 rpm/min, and the slurry flow rate is controlled at 8-10L/min.
  • the second grinding step the pressure is controlled at 200-220KG, the upper and lower grinding discs rotate at the same speed, the rotation speed is controlled at 28-30 rpm/min, and the slurry flow rate is controlled at: 6-8L/min.
  • the above improvement scheme firstly hones the initial sapphire sheet by means of large pressure, low rotation speed and large flow rate, which can effectively increase the thinning rate and improve the grinding efficiency.
  • the thinner sapphire sheet is then ground using low pressure, high speed, and low flow to prevent thinner sapphire chips from breaking.
  • a two-layer composite non-planar orientation sapphire sheet, or a sapphire sheet is preferably combined with other materials. This results in different hardness and crack resistance characteristics on both sides of the sapphire panel.
  • the present invention makes further improvements, and proposes the following grinding method.
  • Method 1 A sapphire sheet with a double-layer composite non-crystal plane orientation for a sapphire panel, wherein the upper surface is the A surface and the lower surface is the C surface, and the C surface of the composite sapphire sheet is placed face down on the upper and lower grinding discs. Between, control the upper grinding disc speed is lower than the lower grinding disc speed.
  • the upper and lower surfaces are separated, and the upper and lower surface polishing liquids are separately supplied, and the polishing liquid supply speed between the upper surface and the upper grinding disk is controlled to be smaller than the honing liquid supply speed between the lower surface and the lower honing disk.
  • the grinding process is divided into a first grinding step and a second grinding step in this order.
  • the first grinding step the pressure is controlled at 280-300KG, the upper grinding disc speed is controlled at 20-22 rpm/min, the upper grinding liquid flow is controlled at: 8-9L/min, and the lower grinding disc speed is controlled at 22-24 rpm/min.
  • the flow rate of the lower layer is controlled at 9-10L/min.
  • the second honing step the pressure is controlled at 200-220KG, the upper grinding disc speed is controlled at 26-28 rpm/min, the upper grinding fluid flow is controlled at: 6-7L/min, and the lower grinding disc speed is controlled at 28-30 rpm/ Min, the lower slurry flow rate is controlled at 7-8L/min.
  • the sapphire panel is a double-layer material processed by combining sapphire sheet and glass, wherein the upper layer is a sapphire layer, the lower layer is a glass layer, and the sapphire layer is placed downward between the upper and lower grinding discs, and the upper surface is controlled to be ground.
  • the disk speed is lower than the lower grinding disk speed.
  • the upper and lower surfaces of the sapphire sheet are separated, and the polishing liquid is supplied separately for the upper and lower surfaces, and the supply rate of the honing liquid between the upper surface and the upper grinding disc is controlled to be smaller than the supply speed of the polishing liquid between the lower surface and the lower grinding disc.
  • the grinding process is divided into a first grinding step and a second grinding step in sequence;
  • the first grinding step the pressure is controlled at 280-300KG, the upper grinding disc speed is controlled at 20-22 rpm/min, the upper grinding liquid flow is controlled at: 8-9L/min, and the lower grinding disc speed is controlled at 22-24 rpm/min.
  • the flow rate of the lower layer is controlled at 9-10L/min.
  • the second grinding step the pressure is controlled at 200-220KG, the upper grinding disc speed is controlled at 26-28 rpm/min, the upper grinding liquid flow is controlled at: 6-7L/min, and the lower grinding disc speed is controlled at 28-30 rpm/min.
  • the flow rate of the lower honing fluid is controlled at 7-8L/min.
  • the sapphire touch panel is placed between the upper and lower polishing discs, and two kinds of SiO 2 polishing liquid are used.
  • the polishing disc is adhered to the upper and lower polishing discs by a non-woven polishing pad, and the rotation speed of the lower disc is controlled between 20-30 rpm, and the pressure is controlled.
  • the control is between 200-300kg and the temperature is controlled between 28-33 ° C; the polishing process is completed on a double-sided polishing machine.
  • the sapphire touch panel obtained by the CMP process according to the present invention has a one-time pass rate of more than 80%, a surface roughness of the panel of less than 5 nm, a flatness of less than 5 ⁇ m, and a thickness tolerance of less than ⁇ 10 ⁇ m.
  • variable speed polishing method which comprises, according to the above polishing method, a first polishing step and a second polishing step performed successively, wherein ,
  • the first polishing step the pressure is controlled at 280-300KG, the lower plate speed is controlled at 28-30 rpm/min, the polishing solution particle size is 75.0 nm, and the polishing liquid flow rate is controlled at 4-6 L/min.
  • the second polishing step the pressure is controlled at 200-220KG, the upper and lower polishing discs rotate at the same speed, the rotation speed is controlled at 20-22 rpm/min, the SiO 2 particle size in the polishing liquid is 35.6 nm, and the polishing liquid flow rate is controlled at: 2-4L /min.
  • the surface rough sapphire sheet is polished by a large pressure, a large rotation speed, a large particle diameter, and a large flow rate, which can effectively increase the polishing removal rate and improve the polishing efficiency.
  • the sapphire sheet smoothed by the first step is finely polished with low pressure, low rotation speed, small particle size and small flow rate to ensure the quality of polishing.
  • the improved method can effectively improve the polishing efficiency under the premise of protecting the polishing quality.
  • Method 1 A sapphire sheet oriented for crystal plane orientation, wherein the upper surface is a C surface and the lower surface is a C surface. (Or the A surface on the upper surface and the A surface on the lower surface), place the sapphire sheet face down between the upper and lower polishing discs, and control the rotation speed of the upper polishing disc to be lower than the rotation speed of the lower polishing disc.
  • the upper and lower surfaces are spaced apart, and the polishing liquid supply speed between the upper surface and the upper polishing disk is controlled to be higher than the polishing liquid supply speed between the lower surface and the lower polishing disk.
  • polishing process is divided into a first polishing step and a second polishing step in this order.
  • the first polishing step the pressure is controlled at 280-300KG, the upper polishing plate speed is controlled at 26-28 rpm/min, the upper polishing liquid flow is controlled at: 5-6L/min, and the lower polishing disk speed is controlled at 28-30 rpm/mm.
  • the flow rate of the lower polishing liquid is controlled at 4-5L/min, and the particle size of the polishing liquid is 75.0 nm.
  • the second polishing step the pressure is controlled at 200-220KG, the rotation speed of the upper polishing plate is controlled at 20-22 rpm/min, and the flow rate of the upper polishing liquid is controlled.
  • the sapphire panel is a single layer material of sapphire sheet, and the sapphire single layer material is placed between the upper and lower polishing discs, and the rotation speed of the upper polishing disc is controlled to be lower than the rotation speed of the lower polishing disc.
  • polishing liquid supply speed between the upper surface of the sapphire sheet and the upper surface and the upper polishing disk is greater than the polishing liquid supply speed between the lower surface and the lower polishing disk.
  • polishing process is divided into a first polishing step and a second polishing step in sequence;
  • the first polishing step the pressure is controlled at 280-300KG, the upper polishing plate speed is controlled at 26-28 rpm/min, the upper polishing liquid flow is controlled at: 5-6L/min, and the lower polishing plate speed is controlled at 28-30 rpm/min.
  • the flow rate of the lower polishing liquid is controlled at 4-5 L/min, and the particle size of SiO 2 in the polishing liquid is 75.0 nm;
  • the second polishing step the pressure is controlled at 200-220KG, the upper polishing disc speed is controlled at 20-22 rpm/min, the upper polishing liquid flow is controlled at: 3-4L/min, and the lower polishing disc speed is controlled at 22-24 rpm/min.
  • the flow rate of the lower polishing liquid is controlled at 2-3 L/min, and the particle size of SiO 2 in the polishing liquid is 35.6 nm.
  • the polishing liquid contains soybean soft phospholipid and polyurethane, and the SiO 2 particle size is 30-40 and 70-80 nm.
  • the inventors' research results show that the polishing solution containing soy soft phospholipid and polyurethane, and the size of 30-40 and 70-80 nm SiO 2 has better sapphire polishing effect, which may be in the composition of soybean soft phospholipid and polyurethane. Contains micropores for 30-40 and (70-80 nm SiO 2 ).
  • the beneficial effects of the present invention are: a large-sized sapphire touch panel can be prepared, the mechanical damage layer can be eliminated, and an ultra-smooth surface with a complete crystal lattice, a flatness of ⁇ 5 ⁇ m, and a polished surface roughness of ⁇ 5 nm can be obtained.
  • the process shortens the processing time of the sapphire substrate and reduces the production cost.
  • Another object of the present invention is to provide a sapphire sheet diamond wire cutting process for a mobile phone panel, which requires an adhesive to adhere the ingot to a workpiece holder that can be fixed to the slicer in a specific crystal orientation. . From a specific lattice surface, the high speed of the wire wheel is used to drive the high speed motion cutting of the diamond wire.
  • a sapphire sheet diamond wire slicing method characterized in that the slicing method comprises the following steps:
  • the sapphire crystal block is adhered to the surface of the workpiece with the C-axis or the M-axis center line as the bottom surface, and the cut surface is the A surface;
  • a sapphire sheet is obtained by cutting a sapphire crystal block with a diamond wire, wherein the diamond wire has a wire diameter of 0.25 mm, a diamond particle size of 30-40 ⁇ m, a wire tension of 35 N, a linear velocity of 12 m/s, and a workpiece feed speed of 0.25 mm/ Min, the cutting fluid flow rate is 350ml/s.
  • the inventor found in practice that when the diamond wire is cut, the ratio of the workpiece feed speed to the linear velocity is 1:2880000, and the diamond wire is not easily broken.
  • the cutting liquid temperature is 25 ° C ⁇ 2 ° C. Applicant's research found that the temperature of the cutting fluid and the rate of disconnection are nonlinear.
  • the workpiece swing angle is 2-10 °
  • the workpiece swing frequency is 15-40 C ir/mm.
  • the sapphire has a high hardness.
  • the inventors have studied that the normal wire-cutting process is easy to deposit diamond particles and sapphire debris on the contact line between the diamond wire and the workpiece. This deposition phenomenon may be one of the main factors causing the wire breakage of the diamond wire.
  • the workpiece swing at the proper angle and frequency can reduce the debris deposition; the excessively high swing angle and frequency cut surface are easy to be lost, and it is difficult to cut out the flat cut surface; the low angle is difficult to perform dust removal.
  • the workpiece swing angle is 5°
  • the workpiece swing frequency is 28 C ir/min. Under this condition, it is the optimal condition.
  • the un-bladed diamond wire cutting waste ingot is first edged.
  • the inventors have studied that the uncut edge of the diamond wire directly cuts the sapphire ingot, which is prone to cause chipping and misalignment.
  • the cutting liquid contains diamond particles having a particle diameter of 20 ⁇ m and corundum particles having a particle diameter of 50 ⁇ m.
  • Applicant's research has shown that the addition of a mixture of diamond particles and corundum particles in the cutting fluid can increase the service life of the diamond wire, while the larger particle size of the corundum particles can block the diamond deposited on the contact line between the diamond wire and the workpiece. Particles and sapphire debris are taken away to reduce the rate of wire breakage.
  • the content of the cutting liquid component is as follows: deionized water 100-200, particle size 20 ⁇ ⁇ diamond particles 2-8, corundum particles 1-8 having a particle size of 50 ⁇ m, molecular weight 200 Polyethylene glycol 32, borate 10-40.
  • the content of the cutting liquid component is as follows: deionized water 100, diamond particles having a particle size of 20 ⁇ , corundum particles 8 having a particle diameter of 50 ⁇ , polyethylene glycol 32 having a molecular weight of 200 , Borate 40.
  • the content of the cutting liquid component is as follows: deionized water 100, particle size 20 ⁇ ⁇ diamond particle 2, corundum particle 1 having a particle diameter of 50 ⁇ m, polyethylene glycol 32 having a molecular weight of 200 , Borate 10.
  • the content of the cutting liquid component is as follows: deionized water 100, diamond particles having a particle size of 20 ⁇ , corundum particles 7 having a particle diameter of 50 ⁇ , and polyethylene glycol 32 having a molecular weight of 200. , borate ester 30.
  • the cutting liquid formula of the above scheme has been proved to reduce the wire breakage rate and improve the surface flatness of the cut surface.
  • Another technical problem to be solved by the present invention is to provide a single-side polishing processing method for a sapphire sheet, which is particularly suitable for thick processing. Description
  • Polishing of sapphire sheets with a degree below 1 mm Polishing of sapphire sheets with a degree below 1 mm.
  • the present invention abandons the conventional double-sided polishing process which relies on the process of carrying the product of the parade wheel, and instead adds a single-side polishing process which is applied to the ceramic disk to increase the strength of the product.
  • the polishing method for the ultra-thin sapphire sheet of the invention is that the sapphire sheet cut into pieces is heated to 120 ° C through a heating table, and then the solid wax is applied to the product and evenly attached to the ceramic plate, and then the sapphire is attached.
  • the ceramic disk of the sheet is placed on a single-sided polishing machine for polishing.
  • the thickness of the sapphire sheet cut into pieces is 0.1-lmm
  • the thickness of the cut sapphire sheet can be further reduced to 0.1-0.5
  • the thickness of the cut sapphire sheet can be further reduced to 0.1-0.3 mm
  • the thickness of the ceramic disk is ⁇ 530 mm, and the flatness is ⁇ 5 ⁇ ⁇
  • the sapphire sheet is attached to a ceramic disk, cooled to room temperature, and then placed in a single-side polishing machine for polishing.
  • the weight is pressed on the entire sapphire sheet and then cooled.
  • polishing time was 2 hours.
  • the component parts by weight of the solid wax are: sapphire fine powder 35-40 having a particle diameter of 20 ⁇ m, microcrystalline corundum 1-5 stearic acid 20-30 having a particle diameter of 30 ⁇ m, microcrystalline wax 8-18, lanolin 2-5, acetamide 0.5-2
  • the component parts by weight of the solid wax are: sapphire micropowder 38 having a particle size of 20 ⁇ , microcrystalline corundum 4 having a particle size of 30 ⁇ , stearic acid 20, microcrystalline wax 18, lanolin 5 , acetamide 2
  • the invention adopts a single-side polishing process, and uses a ceramic disk having a large thickness and strength as a carrier, so that the sapphire piece has no deformation under high rotation speed and high pressure, so the problem of fragmentation of the sapphire piece is well avoided, and
  • the sapphire sheet can withstand greater pressure and speed, which in turn increases production efficiency.
  • the product can be pressurized to 0.5kg per square centimeter with a single throwing machine, and the speed can reach 60rpm, while the conventional processing is only 0.2kg per square centimeter, and the maximum speed is 35rpm.
  • the polishing processing method of the present invention is important for processing a large panel having a thickness of 0.5 mm or less, a length of more than 120 mm, and a width of more than 55 mm.
  • Another technical problem to be solved by the present invention is to provide a sapphire material having a good anti-fingerprint effect.
  • the anti-fingerprint sapphire material of the present invention comprises, in order, a sapphire layer, a 50 nm to 50 ⁇ m thick transition layer, and a 1 nm to 10000 nm thick anti-fingerprint layer.
  • the sapphire layer is a single sapphire material layer or a sapphire composite material layer.
  • the sapphire composite layer is obtained by combining two layers of sapphire materials of different crystal phases.
  • the sapphire composite material layer is obtained by combining a layer A sapphire material layer and a layer C sapphire material layer, and the layer A sapphire material layer is located between the layer C sapphire material layer and the transition layer, so that the phase A sapphire layer has high hardness. Features get better played.
  • the sapphire composite layer is obtained by laminating a layer of sapphire material with a layer of glass, and the layer of sapphire material is located between the layer of glass and the transition layer.
  • the transition layer is an oxide layer of silicon generated in situ, an oxide layer of titanium or a mixture layer of the two, for increasing the adhesion between the sapphire material layer and the anti-fingerprint layer, wherein Silicon oxides work better.
  • the anti-fingerprint layer is a fluorine-containing compound layer, a silicon-containing compound layer or a mixture layer of the two.
  • the anti-fingerprint layer is a long-chain fluorine-containing compound in which a fluorine-containing compound is a siloxane
  • the silicon-containing compound is a long-chain silicon-containing compound of a siloxane type, wherein a fluorine-containing compound has a large water contact angle.
  • the silicon-containing compound has good slipperiness.
  • the anti-fingerprint layer is obtained by vacuum evaporation or magnetron sputtering deposition on the transition layer.
  • the anti-fingerprint sapphire material provided by the invention has the characteristics of high hardness of sapphire, the Mohs hardness reaches 9 grades (the glass has only 7 grades), the hardness is higher, and the scratch resistance is more. Excellent, its water contact angle is greater than 100 °, that is, the anti-fingerprint effect is consistent with the glass material, far superior to the anti-fingerprint effect of ordinary sapphire material, and the hand feel is more smooth, and its transmittance is more than 75%.
  • the anti-fingerprint layer can be firmly adhered to the sapphire material layer by the arrangement of the transition layer.
  • the anti-fingerprint sapphire material of the invention is very suitable for the touch window of various electronic products such as mobile phones and tablet computers.
  • Another technical problem to be solved by the present invention is to provide a new mobile phone piece which is designed to better disperse the collision force, improve the service life, and is more in line with the manual engineering. , feel better.
  • the sapphire mobile phone tablet of the present invention comprises a first surface and a second surface.
  • the first surface includes a first main plane, a circular arc surface of R1mm-R24mm, and an edge circular chamfer of R0.08mm-R0.12mm, the circular arc surface being located at a peripheral edge of the first main plane, the edge circle The chamfer is located on the perimeter edge of the arc surface.
  • the width L of the circular arc surface is 0.68 mm - 3.59 mm.
  • the surface plane of the first principal plane is tangent to the connecting side of the circular arc surface; the edge round chamfer is inscribed with the connecting side of the circular arc surface.
  • the second surface includes a second principal plane and a straight chamfer of CO.lmm, and the straight chamfer is located at a peripheral edge of the second principal plane.
  • the four corners of the sapphire mobile phone piece are rounded and chamfered by a corner of R3mm-8mm, which is used for protecting the corners, and has a reasonable size, which can not only effectively protect (the radius is too small to protect). Moreover, the overall appearance is good, and the processing is simple.
  • the sapphire mobile phone chip is provided with a button hole and an earpiece hole matched with the mobile phone, and the button hole and the earpiece hole are provided with a hole chamfering of a hole of R0.08mm-R0.12mm at the edge on the first surface side.
  • the straight chamfering angle of the edge is changed into the edge chamfering angle, so that the collision force can be better dispersed, the probability of causing the chipping gap is significantly reduced, and the strength of the entire mobile phone sheet is increased, and the service life is further improved. long.
  • a circular arc surface is added between the first main plane of the mobile phone sheet and the edge chamfering, so that the appearance of the mobile phone sheet is more beautiful.
  • the position of the finger is just the position of the circular arc surface, which is more ergonomic. , use the feel more comfortable.
  • the visual and touch three-dimensional sense is stronger, that is, the visual effect is enhanced, the use feel is good, and the reasonable size of the circular arc surface enables the button hole and the earpiece hole to Located in a reasonable location, it is more convenient for users to operate the phone.
  • the rounding of the buttonholes makes the buttons more comfortable and feels good.
  • chipping which makes it safer to use and does not easily damage the buttons.
  • the earpiece hole is rounded to fit the ear more comfortably.
  • the round chamfers and the arc surface dimensions are set reasonably to make the effect more prominent.
  • the crystal plane of the first sapphire is a-direction
  • the second sheet is a structural diagram of the c-composite.
  • Fig. 2 is a structural diagram in which the first sapphire crystal plane is a-direction but the lateral orientation is 45 degrees from the m-axis, and the crystal plane of the second sheet is a-direction but the lateral orientation is a recombination in the r-axis direction.
  • FIG. 3 is a combination of a 2 inch sapphire circular sheet in which the first sapphire crystal plane is c-direction but the lateral orientation is 90 degrees from the m-axis, and the second crystal plane is c-direction but the lateral orientation is the m-axis direction.
  • Figure 4 is a schematic view showing the structure of a sapphire sheet and a film.
  • Figure 5 is a schematic view of the structure of the sapphire sheet and the backsheet (ribs).
  • Figure 6 is a schematic view of the structure of the sapphire sheet and the film (chamfering).
  • Fig. 7 is a schematic view showing the steps of measuring a deviation angle of a cutting surface according to the first step of the sapphire ingot.
  • Figure 8 is a schematic view showing the second step of measuring the off-angle of the cutting surface of the sapphire ingot.
  • FIG. 9 is a schematic view showing a chamfer cutting method for measuring a deviation angle of a cutting surface according to the present invention.
  • Fig. 10 is a schematic view showing the deviation angle of the measuring method for detecting the deviation angle of the cutting surface according to the present invention.
  • FIG. 11 is a schematic structural view of a sapphire touch panel of the present invention.
  • FIG. 12 is another schematic structural view of a sapphire touch panel of the present invention.
  • Figure 13 is a schematic view showing the structure of a sapphire sheet.
  • Figure 14 is a schematic view showing the structure of the non-circular hole of the sapphire sheet of the present invention
  • Fig. 15 is a schematic view showing the structure of a non-circular hole for single bit translation processing according to the present invention.
  • Fig. 16 is a schematic view showing the structure of a non-circular hole in a horizontal dip traverse machining of a single drill bit according to the present invention.
  • Fig. 17 is a schematic view showing the structure of a non-circular hole in a horizontal tilting angle of a double drill bit according to the present invention.
  • Fig. 18 is a schematic view showing the non-circular hole structure of the horizontal dip of the double bit of the present invention.
  • Figure 19 is a schematic view showing the structure of the present invention.
  • Figure 20 is a schematic exploded view showing the sapphire layer of the present invention as a single layer of sapphire material.
  • Figure 21 is a schematic view showing the structure of the sapphire layer in the sapphire composite layer of the present invention.
  • Figure 11 is a schematic view showing the structure of a layer of different crystalline sapphire materials.
  • Figure 23 is a schematic view showing the structure of a sapphire material layer in combination with a glass layer.
  • the polished surfaces are superimposed and placed vertically in the molybdenum crucible, and the sheets are tightly pressed without leaving gaps. It was placed in a helium gas protection furnace with a pressure of 25 Torr, heated to 1900 °C at a heating rate of 150 ° / hour, held at 1900 ° C for 10 hours, and then lowered to room temperature at a cooling rate of 150 ° / hour.
  • the composite sapphire crystal sheet adhered by high temperature bonding is taken out, and then ground, contoured, polished, and processed into a 0.75 thick sapphire mobile phone main lens (screen cover). It has scratch-resistant, high-transmittance, high-strength mobile phone lenses.
  • the first crystal face is a direction but the lateral direction is 45 degrees from the m-axis, and the second face is a-direction but the lateral orientation is the r-axis direction.
  • the 4.5-inch inch sapphire sheet has a thickness of 0.35 mm.
  • the sapphire is polished on one side, and the surface roughness Ra is less than 0.1 nm, TTV ⁇ 2 ⁇ m, and LTV ⁇ 0.3 ⁇ m.
  • the polished surfaces are superimposed and placed vertically into the molybdenum crucible, and the sheets are tightly closed without leaving gaps.
  • Example 3 It was placed in a helium gas protection furnace with a pressure of 25 Torr, heated to 1800 °C at a heating rate of 150 ° / hour, held at 1800 ° C for 15 hours, and then lowered to room temperature at a cooling rate of 150 ° / hour.
  • the composite sapphire crystal sheet adhered by high temperature bonding is taken out, and then ground, contoured, polished, and processed into a 0.65 thick sapphire mobile phone main lens (screen cover). It has scratch-resistant, high-transmittance, high-strength mobile phone lenses.
  • Example 3 Example 3
  • a 7-inch rectangular sapphire sheet having a first crystal plane which is a-direction but laterally oriented at an angle of 45 degrees with respect to the m-axis, and a crystal plane of the second sheet which is a-direction but laterally oriented in the r-axis direction, having a thickness of 0.4 mm
  • the sapphire is polished on one side, polished to a surface roughness Ra ⁇ 0.1 nm, TTV ⁇ 2 microns, and LTVOJ micron.
  • the polished surface is superimposed and placed horizontally on a sapphire flat carrier that has been ground but not polished.
  • the layers can be stacked and the carrier placed in a molybdenum crucible. It is placed in a helium gas protection furnace.
  • the pressure in the furnace is 25 Torr. It is heated to 1700 °C at a heating rate of 150 ° / hour, held at 1700 ° C for 15 hours, and then lowered to room temperature at a cooling rate of 150 ° / hour.
  • the composite sapphire crystal sheet adhered by high temperature bonding is taken out, polished, contoured, polished, and processed into a 0.75 thick sapphire mobile phone tablet screen cover. It becomes a computer main screen lens with scratch resistance, high transmittance and high strength.
  • a 7-inch rectangular sapphire sheet having a first crystal plane which is a-direction but laterally oriented at an angle of 45 degrees with respect to the m-axis, and a crystal plane of the second sheet which is a-direction but laterally oriented in the r-axis direction, having a thickness of 0.4 mm
  • the sapphire is polished on one side, and the surface roughness after polishing is Ra ⁇ 0.1 nm, TTV ⁇ 2 ⁇ m, LTV ⁇ 0.3 ⁇ m.
  • the polished surface is superimposed and placed horizontally on a sapphire flat carrier that has been ground but not polished.
  • the layers can be stacked and the carrier placed in a molybdenum crucible.
  • the pressure in the furnace is 25 Torr, heat up to 1700 °C at a heating rate of 150 ° / hour, keep it at 1700 ° C for 15 hours, and then drop to 150 ° / hour to the normal temperature.
  • the composite sapphire crystal sheet adhered by high temperature bonding is taken out, polished, contoured, polished, and processed into a 0.75 thick sapphire mobile phone tablet screen cover. It becomes a computer main screen lens with scratch resistance, high transmittance and high strength.
  • a 2 inch sapphire circular sheet having a first crystal plane which is c-direction but transversely oriented at an angle of 90 degrees to the m-axis, and a crystal plane of the second sheet which is c-direction but laterally oriented in the m-axis direction, having a thickness of 0.7
  • the sapphire of mm is polished on one side, and the surface roughness after polishing is Ra ⁇ 0.1 nm, TTV ⁇ 2 ⁇ m, LTV ⁇ 0.3 ⁇ m.
  • the polished surface is superimposed and placed horizontally on a sapphire flat carrier that has been ground but not polished.
  • the layers can be stacked and the carrier placed in a molybdenum crucible. It is placed in a helium gas protection furnace.
  • the pressure in the furnace is 25 Torr. It is heated to 2000 °C at a heating rate of 150 ° / hour, held at 2000 ° C for 8 hours, and then lowered to room temperature at a cooling rate of 150 ° / hour.
  • the composite sapphire crystal sheet adhered by high temperature bonding is taken out, polished, polished, and processed into a 1.35 thick sapphire laser window. It becomes a laser-guided military window with high transmittance and high strength.
  • the sapphire composite structure is composed of a watch sheet 1, a center sheet 21, and a corner sheet 22.
  • the combined area of the center piece 21 and the corner piece 22 is equal to the surface piece 1.
  • the center piece 21 is a prismatic piece
  • the corner piece 22 is a triangular piece.
  • the corner piece 22 has a straight chamfer 221 .
  • the blank cutting block with the surface a is used to chamfer the surface grinding with a 45-degree jig, and the chamfer is perpendicular to the c-axis.
  • the blank cutting block with the surface a is used to chamfer the surface grinding with a 45 degree clamp, and the chamfer is perpendicular to the m axis.
  • the OGS touch panel of the present invention comprising an upper sapphire cover, a middle ITO conductive layer (processed into a touch sensor) 3a, a lower insulating protective layer 4a, and the sapphire cover includes The edge non-touch area 8a and the middle touch area 9a, the sapphire cover layer includes an upper layer C sapphire layer 7a and a lower layer A sapphire layer 6a.
  • the ITO conductive layer 3a is attached to the surface of the sapphire cover layer A sapphire layer 6a corresponding to the touch area, and the surface of the sapphire layer of the sapphire cover corresponds to the surface of the non-touch area with the ink layer 1, the ITO conductive layer 3a and The connection line 5a between the FPCs is attached under the light shielding material layer, and the insulating protective layer 4a covers the ITO conductive layer 3a and the connection line 5a from below.
  • the ink layer has a thickness of 8 nm to 15 nm.
  • the ITO conductive layer has a thickness of 10 nm to 20 nm.
  • the sapphire cover has a thickness of 0.3 mm to 0.8 mm.
  • the sapphire cover edge is machined with a lead angle structure.
  • the touch panel production process includes the following steps.
  • Two sapphire pieces each having a crystal plane oriented to the A side and the C side, and processed into sheets having the same shape and size;
  • the sapphire substrate semi-finished product is obtained by bonding the ground surface of the first sapphire sheet to the ground surface of the second sapphire sheet, wherein the surface of the C-plane face-oriented sapphire layer is used as the upper surface, and the A-face crystal orientation
  • the surface of the sapphire layer serves as a lower surface; the upper and lower surfaces of the composite finished sapphire substrate and the side edges are ground to obtain a sapphire substrate.
  • the crystal orientations of the upper and lower surfaces of the sapphire substrate are C-plane orientation and A-plane orientation, respectively;
  • the thickness of the single-piece sapphire sheet is less than 0.4 mm, and after the compounding, grinding is performed from the upper and lower sides respectively, and the thickness protection of the finished product is between 0.4 mm and 0.6 mm;
  • the transparent conductive layer film is patterned by coating, exposing, developing, hardening, etching and stripping processes.
  • the thickness of the photoresist is 1600 ⁇ 2000nm, the uniformity is less than 5%, and the pre-baking temperature is 80-90 °C;
  • Exposing the photoresist that is, etching the electrode pattern on the photoresist
  • the exposure conditions are: ultraviolet light wavelength: 365 nm, luminous flux: 100 120 mj, the mask of the electrode pattern of the transparent conductive layer is a chrome plate, and the distance from the substrate 100um ⁇ 200um ;
  • the transparent conductive layer is etched to form a transparent conductive layer electrode pattern, and the etching material is: HCL 60% ⁇ 65% ten HO240% ⁇ 35%, temperature: 40-45 °C, time: 120 ⁇ 220 seconds;
  • the photoresist is removed to form a transparent conductive pattern functional electrode, using materials: NaOH, concentration 2.0 ⁇ 1.5 MOL/L, temperature: 30 ⁇ 35 ° C, time 100 seconds to 120 seconds, and finally rinsed with pure water;
  • the thickness of the bonded sapphire block is controlled by the amount of sapphire sheet bonding. Control the thickness of the sapphire block to 10mm ⁇ 15mm.
  • the binder is a polar binder whose main component is a modified epoxy resin and an amino polyether, which can be removed as needed.
  • the non-circular hole is punched by firstly making vertical holes at both ends and the middle portion, and then horizontally shifting.
  • the relationship between the splitter segment L and the drill diameter R is 2-4:1.
  • the grinding tool material is made of electroplated silicon carbide, and the mesh number is 200 mesh to 1000 mesh.
  • the line speed is 4m/s or more, grinding at high speed, and processing sapphire in a low feed mode.
  • the above processing parameters are related to the formation of sapphire sheets.
  • the sapphire sheet is punched according to the process of the embodiment, and the sapphire sheet can be effectively prevented from being broken during the processing.
  • the high-speed low-feed of the electroplated diamond sanding head can be polished and punched on the tough sapphire surface. With the CNC's CNC machining accuracy to control the required hole requirements, the hole accuracy can reach IjO.Olmm, and the yield can reach 99%.
  • the non-circular hole is punched in such a manner that the vertical hole is firstly formed at both ends and the middle portion, and then the bit is horizontally traversed from the horizontal direction by an angle of 10° to 45°.
  • This method can reduce the overall strength requirements of the drill bit, speed up the machining process and save processing time.
  • the relationship between the splitter segment L and the drill diameter R is 2:1.
  • the non-circular hole is punched in such a manner that the vertical hole is firstly formed at both ends and the middle portion, and then the horizontal distance between the double drill bit and the horizontal direction is relatively parallel with the horizontal angle of 10° to 45°.
  • This method can reduce the overall strength requirements of the drill bit, speed up the machining process, and further save processing.
  • the relationship between the splitter segment L and the drill diameter R is 4:1.
  • the non-circular hole is punched by firstly forming a vertical hole at both ends and the middle portion, and then the angle between the double drill bit and the horizontal direction is 10° to 45° and 135° to 170°. shift. This method can reduce the overall strength requirements of the drill bit, speed up the machining process, and further save processing time.
  • the relationship between the splitter segment L and the drill diameter R is 3:1.
  • Use 11-slot ultrasonic cleaning equipment use 41 pieces of cleaning basket, use potassium hydroxide cleaning agent in the first tank, concentration 20%, use sodium sulfate cleaning agent concentration 0.02% in the second tank, 3rd, 4th, 5th, 6th Pure water is used for the 7 tanks, pure IPA for the 8th, 9th, and 10th tanks, and kerosene for the 11th tank.
  • the ultrasonic power is set to 2.0W. Processing parameters:
  • 3rd slot temperature 75 degrees, cleaning time 180 seconds
  • 11th slot temperature 110 degrees, drying time 30 seconds
  • the sapphire touch panel is processed, and the surface decontamination and degreasing rate of the product is 100%.
  • the solution can effectively add various sizes of sapphire panels to effectively control the cleanliness of the product, and the process has high yield and low production cost.
  • the first tank is a potassium hydroxide solution having a mass fraction of 20%
  • the second tank is a sodium sulfate solution having a mass fraction of 0.02%
  • the first tank is a potassium hydroxide solution having a mass fraction of 20%
  • the second tank is a sodium carbonate sodium carbonate solution having a mass fraction of 0.01%.
  • Another embodiment of the present embodiment is a mixed cleaning agent composed of a mass fraction of 20% potassium hydroxide solution and a mass fraction of 0.02% sodium sulfate solution in a ratio of 1:2 in the first tank; the second tank is a mass fraction of 0.02%.
  • Sodium sulfate solution is a mixed cleaning agent composed of a mass fraction of 20% potassium hydroxide solution and a mass fraction of 0.02% sodium sulfate solution in a ratio of 1:2 in the first tank; the second tank is a mass fraction of 0.02%.
  • Sodium sulfate solution is a mixed cleaning agent composed of a mass fraction of 20% potassium hydroxide solution and a mass fraction of 0.02% sodium sulfate solution in a ratio of 1:2 in the first tank; the second tank is a mass fraction of 0.02%.
  • Sodium sulfate solution is a mixed cleaning agent composed of a mass fraction of 20% potassium hydroxide solution and a mass fraction of 0.02% sodium sulfate solution in a ratio of 1:2
  • Another embodiment of this embodiment is a sodium hydroxide solution having a mass fraction of 15% in the first tank and a potassium dihydrogen phosphate solution having a mass fraction of 0.02% in the second tank.
  • Another embodiment of the present embodiment is a sodium hydroxide solution having a mass fraction of 15% in the first tank, a potassium dihydrogen phosphate solution having a mass fraction of 0.02% in the second tank, and an EDTA having a mass fraction of 0.02% in the third tank. Disodium solution.
  • Another embodiment of this embodiment is a disodium EDTA solution having a mass fraction of 0.02% in the third tank.
  • Another embodiment of the present embodiment is a mixed cleaning agent composed of a mass fraction of 20% potassium hydroxide solution and a mass fraction of 0.02% sodium sulfate solution in a ratio of 1:2 in the first tank; the second tank is a mass fraction of 0.02%.
  • Sodium sulfate solution composed of a mass fraction of 20% potassium hydroxide solution and a mass fraction of 0.02% sodium sulfate solution in a ratio of 1:2 in the first tank; the second tank is a mass fraction of 0.02%.
  • the third tank is an acetic acid solution having a mass fraction of 0.05%.
  • An annealing method used in sapphire processing consists of the following steps:
  • Step one placing the sapphire crystal in an annealing furnace to close the furnace cavity; vacuuming to remove air and mixed impurities in the furnace cavity, and continuously filling with high-purity nitrogen for protection, and the nitrogen flow rate is stabilized at 5 L/min;
  • step two the temperature is gradually increased from 8 hours to 1450 °C, and the heating rate is 3 ° C / min. At this heating rate, the crystal is more heated and reaches the set temperature.
  • Step three keep the temperature at 1450 ° C for 8 hours;
  • Step 4 set the slow cooling, the cooling rate is 1.25'C/min, and the program is set to cool for 16 hours from 1450 °C to 250 to 250 °C.
  • the program is closed, the furnace is still filled with nitrogen gas, cooled to 150 ° C, the nitrogen is turned off, and the furnace is naturally cooled.
  • Another embodiment of this embodiment is that the nitrogen flow rate is stabilized at 6 L/min.
  • Applicant's research shows that when the nitrogen flow rate is 6L/min, the gas turbulence and turbulence are less, and at the same time, it can provide the best fluid temperature rise and fall environment. Spoilage and turbulence can cause dryness and unevenness on the surface of the crystal, which is detrimental to stable stress relief.
  • Another embodiment of this embodiment is that the nitrogen flow rate is stabilized at 10 L/min.
  • Applicants have found that a gas flow rate of 10 L/min has a faster temperature rise and fall efficiency, but turbulence and turbulence are generated, and the turbulence and turbulence are small only when the volume of the furnace chamber is more than 300L.
  • Another embodiment of this embodiment is that the nitrogen flow rate is stabilized at 8 L/min.
  • Another embodiment of this embodiment is that the nitrogen flow rate is stabilized at 6 L/min.
  • Step 4 set the slow cooling, the cooling rate is 1.25 °C / m in, the program is set to cool down for 16 hours from 1450 ° C to 250 ° C, to 250 ° C, the program is closed, the heating program is started, the heating speed ratio is 3 °C/min, the furnace is still filled with nitrogen gas. After heating to 310 °C, start the cooling program. After cooling to 150 °C, turn off the nitrogen and let the furnace cool naturally.
  • the Applicant has found that a temperature rising process is added during the cooling process in step four to enhance the strength of the surface of the sapphire crystal, especially the sapphire crystal containing the sharp corner portion, which is greatly improved in toughness and is not easily broken.
  • Another solution of this embodiment is that the solution uses a mixture of argon and nitrogen instead of a single nitrogen, and the ratio of argon to nitrogen is 1:10. Applicants have found that the incorporation of an appropriate amount of argon in nitrogen is beneficial to improve the surface flatness of the sapphire crystal after annealing and to reduce surface burrs.
  • Another solution of this embodiment is that the present scheme uses a mixture of helium and nitrogen instead of a single nitrogen gas, and the ratio of helium to nitrogen is 3:10. Applicants have found that the incorporation of an appropriate amount of helium in nitrogen is beneficial to improve the surface flatness of the sapphire crystal after annealing and to reduce surface burrs.
  • the abrasive grain size is about 12-14u, and the boron carbide slurry concentration is 19%.
  • Double-layer grinding and thinning processing is performed on the single-layer or double-layer sapphire touch panel. Processing parameters: Pressure: 250KG, Rotation speed: 25rpm/min, Flow rate: 8L/mm, time: 30min, the sapphire touch panel was processed according to the process of the present embodiment, the removal rate was 1.3 u/min, the surface roughness was 3.5 u, the TTV was 6 u, and the pass rate was 98%.
  • the invention can effectively process large-size sapphire panels and control the product TTV to obtain a smaller surface roughness and a shallower damage layer depth. This process can reduce polishing time and reduce production costs.
  • Another embodiment of the present embodiment is: selecting an abrasive grain size of about 12-14 U, and a boron carbide slurry concentration of 19% for double-sided equal-speed grinding and thinning of a single-layer or double-layer sapphire touch panel, including the first grinding Step, processing parameters: pressure: 280KG, speed: 23rpm/mi n , flow rate: 8L/min, time: 16min; second grinding step, processing parameters: pressure: 240KG, speed: 28rpm/min, flow rate: 8L/min, Time: 8 mm;
  • the sapphire touch panel was processed according to the process of the present embodiment, and the average removal rate was 1.5 u/min, the surface roughness was 3.5 u, the TTV was 6 u, and the pass rate was 97.6%.
  • Another embodiment of the present embodiment is: selecting an abrasive grain size of about 12-14u, and a boron carbide slurry concentration of 19% to perform double-sided constant-speed grinding and thinning on the double-layer composite sapphire touch panel, the sapphire panel upper surface It is the A side and the lower surface is the C side. Place the sapphire touch panel C face down, between the upper and lower grinding discs, and separate the upper and lower surfaces of the sapphire sheet.
  • the liquid is supplied separately.
  • the specific parameters are as follows: Pressure: 280KG, Upper grinding disc rotation speed: 24rpm7min, Lower grinding disc rotation speed: 28rpm/min, Upper surface grinding fluid flow rate: 6L/min, Lower surface grinding fluid flow rate: 8L/min, Time: 26min;
  • the process of processing the sapphire touch panel of the embodiment has an average removal rate of 1.40 u/min, a double surface roughness of 3.4 u, a TTV of 6 u, and a pass rate of 97.4%.
  • Another embodiment of the present embodiment is: selecting an abrasive grain size of about 12-14 U and a boron carbide slurry concentration of 19% to perform double-sided equal-speed grinding and thinning on the double-layer composite sapphire touch panel, the sapphire panel upper surface It is the A side and the lower surface is the C side.
  • the sapphire touch panel C faces downward and is placed between the upper and lower grinding discs. The upper and lower surfaces of the sapphire sheet are separated, and the polishing liquid is supplied separately for the upper and lower surfaces.
  • the specific grinding step includes a first grinding step, processing parameters: pressure: 280 KG, upper grinding disc rotation speed: 23 rpm/min, lower grinding disc rotation speed: 25 rpm/min, upper surface polishing liquid flow rate: 6 L/min, lower surface polishing liquid flow rate: 8L/min, time: 16min; second grinding step, processing parameters: pressure: 240KG, upper grinding disc speed: 27rpm/min, lower grinding disc speed: 29rpm/min, upper surface grinding fluid flow: 6L/min, lower surface
  • the flow rate of the slurry was: 8 L/min, time: 8 min; the sapphire touch panel was processed according to the process of the present embodiment, the average removal rate was 1.53 u/min, the double surface roughness was 3.5 u, the TTV was 6 u, and the pass rate was 97.9%. .
  • the sapphire touch panel is polished by double-sided polishing machine and nano polishing liquid, so that the surface roughness of the sapphire touch panel is less than 5nm, no stress and no warping deformation.
  • the sapphire touch panel obtained by the CMP process according to the present embodiment has a first pass rate of 86.5%, a panel surface roughness of 0.5 nm, a flatness of 4 ⁇ m, and a thickness tolerance of 8 ⁇ m.
  • Another solution of this embodiment is to select a SiO 2 polishing solution with abrasive grains of 35.6 nm and 75.0, and perform double-side polishing on the sapphire touch panel.
  • the pH of the polishing solution is 9.6 (0j), and the polishing temperature is 28-33. °C, specifically,
  • First polishing step Processing parameters: Pressure: 280KG, Rotation speed: 2&pm/min, S ⁇ Q in polishing solution Particle size: 75.0 Flow rate: 4L/min, Time: 160min; Second polishing step, Processing parameters: Pressure: 240KG, Rotation speed: 23 rpm / min, S Oi particle size in the polishing solution: 35.6 Flow rate: 4 L / min, time: 80 min ;
  • the sapphire touch panel is processed, the pass rate is 88.7%, the surface roughness of the panel is 0.5 nm, the flatness is 4 ⁇ m, and the thickness tolerance is 8 ⁇ m.
  • Another embodiment of the present embodiment is: selecting a SiO 2 polishing solution having an abrasive particle diameter of 75.0 nm, performing double-side polishing on the sapphire touch panel, the pH of the polishing solution is 10.1, and the polishing temperature is 28-33 ° C.
  • the upper surface of the sapphire panel is the C surface, and the lower surface is the C surface (or the upper surface is the A surface and the lower surface is the A surface). Place the sapphire touch panel between the upper and lower polishing discs, separating the upper and lower surfaces of the sapphire sheet.
  • the sapphire touch panel is processed, and the pass rate is 85.8%, the surface roughness of the panel is 0.5 nm, the flatness is 4 ⁇ m, and the thickness tolerance is 8 ⁇ m.
  • the sapphire touch panel is placed between the upper and lower polishing discs, and the upper and lower surfaces of the sapphire sheet are separated.
  • the specific polishing step includes a first polishing step, processing parameters: pressure: 280 KG, upper polishing disc rotation speed: 27 rpm/ m m, lower throw Disc rotation speed: 29 rpm/min, S ⁇ Q 2 particle size in the polishing solution: 80.0 Upper surface polishing liquid flow rate: 5 L/min, Lower surface polishing liquid flow rate: 3 L/min, Time: 160 min; Second polishing step, Processing parameters: Pressure: 240KG, upper polishing disk speed: 23rpm/min, lower polishing disk speed: 25rpm/min, SC particle size in polishing solution: 306
  • the sapphire touch panel was processed, and the pass rate was 89.1%, the surface roughness of the panel was 0.5 nm, the flatness was 4 ⁇ m, and the thickness tolerance was 8 ⁇ m.
  • Another embodiment of the present embodiment is: The two-step polishing operation of the present embodiment is performed in two separate upper and lower sealed spaces, and the upper surface polishing liquid and the lower surface polishing liquid are not in communication with each other.
  • Another embodiment of this embodiment is that the molar ratio of soybean soft phospholipid, polyurethane and SiO 2 in the polishing liquid of the present embodiment is 1: 1: 1.5. The inventors have found that the polishing effect of the polishing liquid is optimal at this ratio.
  • Another aspect of this embodiment is that the molar ratio of soybean soft phosphorus to SiO 2 in the polishing liquid of the present embodiment is 1:1.5.
  • Another embodiment of this embodiment is:
  • the molar ratio of polyurethane to Si ⁇ 2 in the polishing liquid in the present embodiment is 1:1.5.
  • Another embodiment of the present embodiment is: the soybean soft phospholipid, polyurethane and Si in the polishing solution in the present embodiment have a molar ratio of 1:2: 1.5.
  • Another embodiment of the present embodiment is: the surface polishing liquid of the solution It is in one-way communication with the lower surface polishing liquid, and the upper surface polishing liquid can flow to the lower surface of the sapphire, and the lower surface polishing liquid cannot flow back into the upper surface.
  • the sapphire ingot is adhered to the surface of the workpiece with the C-axis and M-axis center lines as the bottom surface, and the cut surface is A-plane.
  • Diamond wire diameter 0.25mm
  • Diamond wire diameter 30-40 ⁇ .
  • the un-bladed diamond wire cutting waste ingot is edged.
  • the sapphire sheet obtained by the mino according to the sapphire diamond wire cutting process of the present embodiment has a first pass rate of 97%, a flatness of ⁇ , a warp of ⁇ , and a thickness tolerance of 12 ⁇ m.
  • the beneficial effects of the invention are as follows: A large-size sapphire touch panel blank product can be prepared, which shortens the processing time of the sapphire slice, improves the production quality, and reduces the production cost.
  • Another solution of this embodiment is: Processing parameters of the program: Tension: 35 ⁇ , Linear velocity: 9.6m/s, workpiece feed: 0.2mm/min, Cutting fluid flow: 350ml/s, Cutting fluid temperature: 35°C , Workpiece rocking angle: 1 Workpiece rocking frequency: 15cir/min.
  • Another solution of this embodiment is: Processing parameters of the program: Tension: 35N, Linear velocity: 12m/s, workpiece feed: 0.25mm/min, cutting fluid flow: 350ml/s, cutting fluid temperature: 35°C, Workpiece rocking angle: 10°, workpiece rocking frequency: 40cir/min.
  • Liquid flow 350ml/s
  • cutting fluid temperature 45°C
  • workpiece rocking angle 5°
  • workpiece rocking frequency 28cir/min.
  • the diamond has a particle size of 50 ⁇ m in the diamond wire of the solution, and the diamond has a particle diameter of 30-40 ⁇ m in the cutting liquid.
  • the larger diameter diamond wire is combined with the smaller particle size cutting fluid to improve the surface flatness of the sapphire ingot and to cut sapphire flakes with a thickness of less than 2 mm.
  • the content of the cutting liquid component of the present solution is as follows: deionized water 100, diamond particles of 20 ⁇ , particle 2 of corundum particles having a particle size of 50 ⁇ m, and polyethylene glycol having a molecular weight of 200. Alcohol 32, borate 10.
  • the content of the cutting liquid component in the present solution is as follows: deionized water 150, diamond particles having a particle size of 20 ⁇ , corundum particles 5 having a particle size of 50 ⁇ m, and polycondensation having a molecular weight of 200. Glycol 32, borate 20.
  • the content of the cutting liquid component in the present solution is as follows: deionized water 200, diamond particles of 20 ⁇ , particle size 8 of corundum particles having a particle size of 50 ⁇ m, and polymer having a molecular weight of 200. Ethylene glycol 32, borate 40.
  • the content of the cutting liquid component in the present embodiment is as follows: deionized water 120, diamond particles having a particle size of 20 ⁇ m, corundum particles 4 having a particle diameter of 50 ⁇ m, and polycondensation having a molecular weight of 200. Glycol 32, borate 15.
  • the content of the cutting liquid component in the present solution is as follows: deionized water 180, diamond particles having a particle size of 20 ⁇ 7, corundum particles 7 having a particle size of 50 ⁇ m, and polycondensation having a molecular weight of 200 Ethylene glycol 32, borate 40.
  • a sapphire sheet having a thickness of 0.5 mm and a length of 145 mm and a width of 66 mm is heated to 120 ° C by a general heating stage, and a solid wax having a melting point of 80 ° C is uniformly applied to the product, and a weight of 10 kg is used. Press on the entire sapphire sheet, let it evenly adhere to the ceramic plate, then move the ceramic plate to the common cooling plate (cooling temperature below 15 °C) to cool, and remove the ceramic when the temperature of the ceramic plate reaches room temperature.
  • the disc is loaded into the single-side polishing equipment, and the pressure of the equipment is set to 0.5kg per square centimeter of the product, the rotation speed is 60rpm (that is, the rotation speed is 60rpm), the processing time is set to 2h, the equipment polishing product is turned on, and the machine is discharged after the arrival time. Take the film and process the second side with the same process to complete the polishing of the entire product.
  • the component parts by weight of the solid wax are: sapphire fine powder 35 having a particle diameter of 20 ⁇ m, microcrystalline corundum having a particle diameter of 30 ⁇ m, stearic acid 20, microcrystalline wax 8, lanolin 2, acetamide 0.5.
  • the sapphire sheet has a thickness of 0.4 mm, a length of 130 mm, and a width of 60 mm.
  • the component parts by weight of the solid wax are: sapphire micro 40 having a particle size of 20 ⁇ m, microcrystalline corundum 5 having a particle size of 30 ⁇ m, stearic acid 30, microcrystalline wax 18, lanolin 5, acetamide 2.
  • the sapphire sheet has a thickness of 0.1 mm, a length of 125 mm, and a width of 57 mm.
  • the component parts by weight of the solid wax are: sapphire fine powder 38 having a particle diameter of 20 ⁇ m, microcrystalline corundum 4 having a particle diameter of 30 ⁇ m, stearic acid 20, microcrystalline wax 18, lanolin 5, acetamide 2.
  • the sapphire sheet has a thickness of 0.7 mm, a length of 150 mm, and a width of 69 mm.
  • the component parts by weight of the solid wax described in the specification are: sapphire fine powder 38 having a particle diameter of 20 ⁇ m, aluminum oxide powder 10 having a particle diameter of 30 ⁇ m 10, stearic acid 20, microcrystalline wax 18, lanolin 5, acetamide 2 .
  • the sapphire sheet has a thickness of lmm and a length of 180 nmi and 82 mm.
  • the component parts by weight of the solid wax are: sapphire fine powder 38 having a particle diameter of 20 ⁇ m, silica 4 having a particle diameter of 40 ⁇ m, zirconia 6 having a particle diameter of 40 ⁇ m, stearic acid 20, microcrystalline wax 18, wool Lipid 5, acetamide 2.
  • the sapphire sheet obtained in each of the examples can be applied to various products such as mobile phones and tablet computers according to the size.
  • Embodiment 19 The structure of the anti-fingerprint sapphire material according to the embodiment is as shown in FIG. 19, and the exploded structure thereof is shown in FIG. 20, which in turn is a sapphire layer lb, a transition layer 2b, and an anti-fingerprint layer 3b, wherein the sapphire layer lb is 0.5.
  • the fingerprint layer 3b is obtained by vacuum evaporation deposition onto the transition layer 2b.
  • the obtained material had a transmittance of 82%, a water contact angle of 116°, a Mohs hardness of 9, and a smooth feel.
  • the structure is sapphire layer lb, transition layer 2b, anti-fingerprint layer 3b, wherein the sapphire layer lb is a 0.4 mm thick layer of pure C-phase sapphire material, and the transition layer 2b is generated in situ.
  • the obtained silicon oxide has a thickness of 950 nm ;
  • the anti-fingerprint layer 3b is a siloxane-type long-chain silicon-containing compound having a thickness of 60 nm, and the anti-fingerprint layer 3b is deposited by vacuum evaporation onto the transition layer 2b.
  • the resulting material has a transmittance of 85%, a water contact angle of 112°, and a Mohs hardness of 9, which is smooth to the touch.
  • the structure is sapphire layer lb, transition layer 2 b, anti-fingerprint layer 3 b, sapphire layer 1 b (by sapphire material layer 11 b and sapphire material layer 12 b b thermal composite Or an adhesive composite, wherein the sapphire material layer 11b is a 0.3mm thick layer A sapphire material layer, the sapphire material layer 12b is a 0.3mm thick phase C sapphire material layer, and the phase A sapphire material layer is located at the transition layer 2 b between the layer C and the phase S sapphire material; the transition layer 1 b is an oxide of silicon formed in situ, having a thickness of 45 ⁇ m ; the anti-fingerprint layer 3 b is a long-chain fluorine-containing compound of a siloxane type, having a thickness of 95 nm The anti-fingerprint layer 3 b is deposited by vacuum evaporation onto the transition layer 2 b. The obtained material has a transmittance of 81%,
  • FIG. 21 is a schematic view showing the structure of the sapphire layer lb, the transition layer 2b, and the anti-fingerprint layer 3b, wherein the sapphire layer lb is a sapphire material layer l ib ' and a glass layer 12b 'heat composite or adhesive composite, wherein the sapphire material layer l ib ' is 0.3mm thick C phase sapphire material layer, the glass layer 12b 'thickness is 0.3mm, the sapphire material layer l ib ' is located in the transition layer 2b and Between the glass layers 12b'.
  • the sapphire layer lb is a sapphire material layer l ib ' and a glass layer 12b 'heat composite or adhesive composite
  • the sapphire material layer l ib ' is 0.3mm thick C phase sapphire material layer
  • the glass layer 12b 'thickness is 0.3mm
  • the sapphire material layer l ib ' is located in the
  • the transition layer 2b is an oxide of titanium which is formed in situ and has a thickness of 100 nm; the anti-fingerprint layer 3b is a long-chain fluorine-containing compound of siloxane type, the thickness is 80 nm, and the anti-fingerprint layer 3b is deposited by magnetron sputtering. Obtained on the transition layer 2b.
  • the resulting material had a transmittance of 81%, a water contact angle of 116°, and a Mohs hardness of 9, which was smooth.
  • the structure is sapphire layer lb, transition layer 2b, anti-fingerprint layer 3b, wherein sapphire layer lb is Description
  • transition layer 2b is a mixture of silicon oxide and titanium oxide formed in situ, thickness is 30 ⁇ ;
  • anti-fingerprint layer 3b is a mixture of fluorine-containing compound and silicon-containing compound, Specifically, it is a mixture of a long-chain fluorine-containing compound of a siloxane type and a long-chain silicon-containing compound of a siloxane type, and has a thickness of 70 nm, and the anti-fingerprint layer 3b is obtained by vacuum evaporation deposition onto the transition layer 2b.
  • the obtained material had a transmittance of 85%, a water contact angle of 115°, and a Mohs hardness of 9, which was smooth.
  • the sapphire involved in this comparative example is a 0.5 mm thick pure A phase sapphire layer, and the surface is not subjected to anti-fingerprint treatment.
  • the obtained material had a transmittance of 82%, a water contact angle of 76°, and a Mohs hardness of 9, which was generally felt.
  • the sapphire has a plurality of crystal phases such as A, C, M, and R.
  • each crystal phase can be used in the present invention, especially in a sapphire composite layer.
  • the phase A sapphire material has good wear resistance and the phase C sapphire material has high light transmittance. Therefore, the A and C phases are more suitable for selection than other crystal phases.
  • the sapphire mobile phone piece as shown in Figures 24-28, the mobile phone piece includes a first surface and a second surface, the first surface comprising a first major plane lc, R12mm and a width L of 2.53mm. And an edge round chamfer 3c of the RO.lmm, the arcuate surface 2c is located at a peripheral edge of the first main plane 1, the edge chamfer 3c is located at a peripheral edge of the circular arc surface 2c, the first main plane lc The arc surface 2c and the edge round chamfer 3c are integrated.
  • the surface plane of the first principal plane lc is tangent to the connecting side of the circular arc surface 2c; the edge circular chamfer 3c and The connecting side of the circular arc surface 2c is inscribed.
  • the second surface includes a second principal plane 4c and a straight chamfer 5c of CO.lmm, and the straight chamfer 5c is located at a peripheral edge of the second principal plane 4c.
  • the four corners are set to a corner chamfer 6c of R6mm, and the four corners are rounded to make the lines of the hand piece softer and more beautiful.
  • the button hole 7c and the earpiece hole 8c are provided on the sapphire mobile phone sheet, and the button hole 7c and the earpiece hole 80 are provided with a hole edge chamfering 9c of RO.1mm at the edge on the first surface side.
  • the width L In the case where the thickness of the mobile phone sheet is constant, the larger the radius of the circular arc surface 2, the larger the width L is. In general, if the width L is too small, the hand feel is relatively poor. When the width L is too large, the button hole 7c is moved up, which is inconvenient for the user to operate the button of the mobile phone, and also affects the appearance.
  • the arc surface 2c is R24mm and the width L3.59mm
  • the edge round chamfer 3c is R0.12mm
  • the hole edge chamfering 9c is R0.12mm
  • the corner chamfering 6c is R8mm .
  • the arc surface 2c is Rlmm, and the width is L88mm
  • the edge chamfer 3c is RO.OSmm
  • the hole edge chamfering 9c is R0.08mm
  • the corner chamfering 6c is R4mm.

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Abstract

本发明涉及一种蓝宝石加工、复合以及应用技术。本发明提供了一种蓝宝石热复合方法，作为触摸屏的制造方法、清洗方法和研磨抛光方法，蓝宝石晶体物理加工方法。解决了单片蓝宝石崩边、裂纹、甚至破裂的技术问题，以及作为触摸屏的应用技术难题。

Description

说 明 书
一种蓝宝石热复合方法
技术领域
本发明涉及一种蓝宝石加工、 复合以及应用。
背景技术
由于蓝宝石有接近于金刚石是的硬度，莫氏硬度 9。优良的可见光和红外光、紫外光透过率 T>85%(400-800 纳米波长）。 并具有优良的抗弯强度和弹性模量， 所以用在高端的手机屏主镜片、 手表镜片、 激光窗口片、 摄像头保护镜片、 激光条码扫描仪视窗片、 触摸屏保护盖板。 但目前使用时都是单层蓝宝石片材在使用， 这里涉及的两层或两层以上复合的加工方法， 提高了加工的成品率和片材的抗静压强度、 抗冲击强度。 蓝宝石具有各向异性， 及其蓝宝石晶体结构具有多个不同的晶面。 虽然， 蓝宝石的每个晶面较其他矿物硬 度更高， 但有的晶面具有其它一些不同的特点。 例如， C面蓝宝石有很好的光学透过率和断裂韧性， Α面 蓝宝石比其他晶面的蓝宝石具有更高的抗压强度和耐磨性。 R面和 M面的蓝宝石也具有其它的一些优点。 美国专利文献 US20130236699公开了一种蓝宝石叠层结构， 包括： 具有第一种晶面取向的第一层蓝宝石片 形成蓝宝石叠层结构的主表面， 具有第二种晶面取向的第二层蓝宝石片形成蓝宝石叠层结构的第二个主平 面， 两层蓝宝石片熔合在一起， 形成蓝宝石叠层结构。 申请人认为上述方案是不可能真正实现的， 蓝宝石 属于晶体结构， 如果按照其说明书第 24段所述， "熔合蓝宝石片的温度， 可以接近或超过蓝宝石的熔融 温度" ， 晶体的特性是有一定熔点， 一旦大于熔点温度材料就会熔化。 无法保持原有形状， 则会发生晶格 的崩塌， 无法保持蓝宝石的固体片状形态， 上下两片蓝宝石片一旦发生熔合， 材料熔化后降温时自发成核 结为多晶， 其晶向无法保持一致的单晶， 因此通过该方法获得的蓝宝石叠层结构无法保持原片材的形状不 能用于触摸屏。
由于晶体存在结理面， 所以加工过程总尽量避开结理面方向防止裂纹产生和扩展。 晶向为 a向的蓝宝石手 机主屏加工时侧边要和(；、 m轴夹角成 45度， 这样既避开了和蓝宝石晶体的0、 r、 m轴垂直， 当受到外力 时不易破损。 这样的毛坯块料的两个个侧面的晶面与 c轴和 m轴夹角为 45度。 但在检测侧面角度偏差时 由于不是标准晶面， 所以无法用 X射线晶向仪测量偏离角。 即由于蓝宝石晶片的毛坯块料的侧面是与晶轴 有 45度的夹角， 所以无法用 X衍射仪直接检测其角度， 目前在制造过程中 45度夹角这项指标制造商都实 行免检， 但 45度的夹角偏差对产品的强度影响较大， 因此急需一种解决测量侧面 （切割面） 偏离角问题 的测量方法。
触摸屏是一种输入设备， 能够方便实现人与计算机及其它便携式移动设备的交互作用， 触摸屏的功能区域 可以划分为视窗式的触控区和非触控区边框，以及提供电连接的柔性电路板 FPC和数据处理芯片 IC 芯片。 近年来， 基于氧化铟锡 （ITO ) 透明导电薄膜的电容触摸屏被广泛应用于移动互联设备， 如智能手机， 便 携式平板电脑。
随着移动互联设备对屏幕反光率、 透光率以及厚度轻薄等方面的要求越来越高， 传统采用双片玻璃 （高硬 度玻璃盖板和带传感电极的玻璃） 贴合而成的电容触摸屏已经很难满足要求。 一种称为 OGS (One Glass Solution) 的电容触摸屏方案被提出并推广应用， 成为新一代触摸屏的重要方向。
所述 OGS电容触摸屏的层级结构包括： 玻璃盖板； 印刷在非视窗区范围内的玻璃盖板下侧表面的油墨层； 继续形成于玻璃盖板和油墨层下侧的透明导电层 （ITO 层）； 在非视窗区范围内形成与透明导电层电连接 的电极层（连接线路）； 以及通过 OCA光学胶贴合连接的绝缘保护层。 OGS结构电容触摸屏在高硬度保护 玻璃盖板背面， 直接形成导电和传感电极， 用同一块玻璃同时起到触摸保护和触控传感的双重作用。 现有触摸屏玻璃盖板均采用钢化有机玻璃， 虽然经过化学强化的钢化玻璃硬度更高， 但其硬度仍然有限， 使用过程中， 仍很容易在面板表面形成划痕。 为了保护屏幕， 需要为手机屏幕贴一层保护膜。 保护膜的增 加， 不仅影响触摸屏的透光度， 而且， 保护膜本身更易于形成滑痕。 以手机为例， 从入手到升级更新三年 时间， 大部分时间 （可能两年半甚至更长时间） 时使用者面对的是布满划痕的保护贴膜。 可以见到的是， 曾经耗费巨大， 艰难地开发改进触摸屏， 一点一点地提高其硬度、 和透光度， 然而， 其成果仅在实验室中 体现出来。 在实际使用过程中， 由于保护贴膜的使用， 耗费巨大而获得的技术成果， 并不能直正地转化为 用户体验。 也就是说， 如果开发或改进后的触摸屏盖板不足以使用户摆脱保护贴膜， 那么， 即使成果显著， 也是亳无意义的。
真正能够解决这一问题的方法是， 寻求提高玻璃盖板的硬度至超过绝大多数用户可接触物质的硬度方法或 者强化工艺， 或者寻求一种硬度至超过绝大多数用户可接触物质的硬度的新材料替代钢化有机玻璃， 令用 户彻底摆脱屏幕保护贴膜的使用。
蓝宝石是一种硬度仅次于钻石的结晶体， 其更度远大于普通钢化玻璃。 而且， 高纯度 （例如 99%以上）蓝 宝石， 还具有很高的光学透射率， 散射少， 可有效阻隔光的漫射， 此外， 蓝宝石还具有比普通玻璃更好的 抗辐射能力、 高导热性， 化学稳定性高， 抗强酸、 强碱， 等诸多优点。
如能将其应用于触摸屏， 替代现有的钢化有机玻璃， 将可能带来优秀的效果。 说 明 书
用于电子触摸面板这类蓝宝石薄片外形具有至少一个外轮廓圆角或至少一个孔。 外轮廓圆角与孔包括但不 仅限于半圆弧和圆形孔， 还可以是曲线弧和方形孔， 椭圆孔。
但是人工生长的蓝宝石加工成较大直径的面板需要极大的经济成本， 造成其难以广泛应用和推广， 同时蓝 宝石薄片脆性较高， 抗冲击性较低的缺点也限制了其使用范围。
针对不同要求， 蓝宝石厚度 （0.1~1.5mm)， 外形要求等。 对蓝宝石进行 CNC数控技术加工是必不可少的 步骤， 从而达到所需要求。 对蓝宝石薄片做相应的加工， 释放其加工应力， 提高材料强度， 抗冲击力。 受 数控机床的工件夹具的限制， 1.5mm以下蓝宝石薄片成品率不高， 容易破损； 同时现有技术无法通过 CNC 数控设备加工 0.5mm以下的蓝宝石薄片。
同时对于蓝宝石薄片的非圆孔打孔工艺， 存在加工时间过长、 边角易应力集中而崩边甚至碎裂。
随着光电子器件产品性能的不断提高,对单晶蓝宝石衬底的加工精度和表面质量的要求愈来愈高，需对蓝宝 石表面进行化学清洗， 是加工过程中控制表面质量的必要工序。
中国专利文献 103111434A公开了一种蓝宝石加工最终清洗工艺， 包括以下步骤： a ： 异丙醇清洗； b ： 乙醇清洗； c ： 去离子水清洗； d ： 氨水清洗； e ： 去离子水清洗： f ： 磷酸清洗； g ： 去离子清洗； h ： 氢氟酸清洗； i ： 去离子水清洗； j ： 去离子水清洗。 清洗完后用甩干机甩干。 采用该发明公开的技术方 案可以有效的去除抛光后拋光液残留、 有机脏污、 金属离子。
中国专利文献 102218410A公开丁一种蓝宝石抛光后的清冼方法， 包括以下步骤： a、 按照双氧水、 氨水和 去离子水的重量比 = 1 : 4 : 5 配制清洗液； b、 采用步骤 a所得清洗液清洗 1 分钟； c、 用去离子水清 洗 4分钟； d、 用硫酸清洗 1 分钟； e、 用去离子水清洗 4分钟； f、 用氢氟酸清洗 30秒； g、 用去离子水 清洗 4 分钟； h、 用丙酮擦拭； ！、 用超声波清洗机清洗 2分钟； _j、 最后用甩干机进行甩千。 该发明由于采 用了上述技术方案， 可有效地将晶片表面残留的有机物， 无机物， 金属离子等去除掉， 避免防止反复清洗 环节， 大大提高丁工作效率。
但是上述方法涉及较多的清洗剂组分， 易造成二次污染， 甩干只能 1次 1片， 效率低， 同时清洗废液对环 境影响较大， 目前缺乏一种清洗效果良好、 效率高效的蓝宝石触摸面板清洗方法。
人工生长的蓝宝石具有很好的耐磨性， 硬度仅次于金刚石达到莫氏 9级， 同时蓝宝石致密性使其具有较大 的表面张力， 上述两个特性十分适用于手机等电子触摸面板。 但是人工生长的蓝宝石同时蓝宝石薄片脆性 较高，抗冲击性较低的缺点也限制了其使用范围。人工生长的晶体有较大的应力， 具有一个对称的开裂面， 稍加敲击即会自行碎裂， 不利于任意切割加工， 为了满足光学器件的特殊需求，对晶体退火是必不可少的。 现蓝宝石加工过程中， 常使用的退火工艺有的分阶段升温降温， 温控程序复杂并且周期冗长； 还有的没有 完全褪去宝石在加工过程中产生的应力， 导致后期加工不良， 这些退火工艺或者是增加了生产成本或者是 降低了宝石晶片的良品率。
为丁满足蓝宝石光学器件发展的要求， 获得高平整的表面， 须对蓝宝石进行化学机械抛光 (CMP); CMP是 目前唯一能获得全局平面化效果的平整化技术， 对蓝宝石晶体表面达到超光滑起到至关重要的作用。 CMP技术是机械磨削和化学腐蚀的组合技术，它借助超微粒子的抛光作用以及浆料的化学腐蚀作用，实现 全局平面化超光滑纳米级无损伤精密抛光； CMP的基本方法是将晶片在抛光液中， 相对于抛光垫旋转， 并 施加一定的压力， 借助机械摩擦及化学腐蚀作用来完成抛光。
用于触摸面板的蓝宝石， 表面质量要求相对更高， 目前对以蓝宝石为材料的触摸面板的抛光处理， 均采用 常规则的抛光方法， 效果不佳。
触摸面板的几个趋势是 OGS、 in-cell或 on-cdl,他们的特点之一是蓝宝石片之下直接复合一层 ITO导电层， 因此蓝宝石片上下两个平面的抛光度要求可能不一致， 现有技术中没有记载如何获得上下不一致抛光度的 蓝宝石触摸面板。
现有技术中缺乏一种成熟的金刚线切割成蓝宝石薄片的切割方法， 现有的金刚线切割方法用于蓝宝石切割 存在易断线， 切割面表面平整度不高以及无法一次切割获得 2mm以下的蓝宝石薄片。
现有的蓝宝石产品厚度都比较厚， 相对强度也比较大， 抛光时用传统的双面抛光设备将产品放入比自身薄 的游行轮 （夹具） 中加工。 但是随着科技发展， 对产品的重量和厚度要求越来越苛刻， 蓝宝石的厚度也越 减越薄， 比如目前手机发展的方向为大屏幕、 超薄和低重量， 蓝宝石密度较大， 其尺寸越大， 相对的重量 也就越重， 为了实现手机大轻薄的要求， 只能降低蓝宝石的厚度， 基本上将宝石厚度控制在 0.7mm以下比 较合适， 如 0.5mm、 0.4mm和 0.3 mm的厚度。
而传统抛光工艺在加工时出现了大量问题：
1、 对于厚度仅为 lmm甚至更薄的蓝宝石产品， 在高压下很容易被压裂， 导致出现大量破损产品；
2、 由于蓝宝石厚度变薄， 那么抛光用游行轮的厚度随之也要变化， 由于现有游行轮采用金属材料制成， 在其厚度减小时， 尤其是减小到 0.5mm以下后强度严重不足， 在抛光高压力高转速的状态下很容易损坏， 导致产品破损率极高， 甚至出现整批产品报废。 尤其是对于厚度在 0.5mm以下， 且长度大于 120mm， 宽 度大于 55mm的大面板， 采用传统的双面加工更加困难的， 面积越大厚度越低， 使其在抛光时整片所受的 说 明 书
压力要比小面板大很多，且抛光布自身是比较软的易压缩变形，所以越大的蓝宝石片其压变形量也就越大， 也越易破碎。
3、 市面缺少一种针对蓝宝石单面抛光的固体蜡， 市售固体蜡用于蓝宝石薄片抛光效果不佳。
玻璃类材料对抗指纹效果的要求是水接触角达到 115°， 接触角越高， 抗指紋效果越好， 而蓝宝石本身 的水接触角不到 90°， 所以将蓝宝石应用于各类电子视窗的触摸屏， 对其进行抗指紋化处理是很有必要的， 既可以提高屏幕的抗沾污性， 同时还能改善手感， 目前缺乏一种蓝宝石片抗指紋处理方法。
但是， 虽然法拉利以及 Vertu等成功应用了蓝宝石作为屏幕产品， 其整体采用平面结构， 使用时并不 符合人体工程学， 其边缘也仅进行了直倒角处理 （比如 CO. lmm的直倒角）， 而直倒角两侧有明显棱角， 在手机使用过程中容易造成崩边、 缺口， 易割手， 使用时手感不好。
发明内容
本发明提供了一种蓝宝石热复合方法， 解决了单片蓝宝石边、 产生裂紋、 甚至破裂的技术问题。 单层蓝宝石晶体片材在加工过程中由于晶体本身存在结理面， 所以在加工过程和使用过程中当受到一 定大的外力作用时晶体材料本身会沿着结理面一定结晶方向崩边、 产生裂紋、 甚至破裂。 这是晶体材料的 固有特性。 为降低加工过程和使用过程中当受到外力作用时裂紋的产生、 扩张， 本发明提出了多层片材的 复合方案， 利用晶向不同板材之间的复合， 增加了产品的强度， 更适合在大尺寸手机屏和触摸平板电脑及 军用激光窗口的使用； 解决了因强度问题存在的应用局限性， 可以让宝石片材做的更薄更轻且具有优良的 性能。
一种蓝宝石热复合方法， 包括以下步骤：
步骤一， 将要复合的两层或两层以上的蓝宝石片材的复合面抛光， 其表面粗糙度 Ra达到 1纳米以下， 平 整度 TTV<5微米， LTV<1.5微米， 翘曲度 < 10微米；
步骤二， 将上述抛光后的蓝宝石片材按照晶面取向不同或侧面的晶轴取向不同进行晶向热复合； 所述蓝宝石片材的热复合条件： 蓝宝石片材置于高温炉中复合， 复合温度高于 1500°C低于蓝宝石熔点
2050 °C ; 充入氦气、 氩气或氮气作为保护气； 保温时间为 1-15小时。
申请人发现， 蓝宝石片材之间在低于其热熔温度的环境下， 由于分子之间的热运动加剧， 在特定上述方案 的特定条件下会形成蓝宝石片材分子之间的键合。 而蓝宝石片材表面粗糙度、 平整度、 LTV和翘曲度与热 复合良品率息息相关， 其原理可能在于上述因素会影响两个片材之间的物理距离， 进而影响蓝宝石片材之 间的分子键合过程。
所述蓝宝石片材抛光面间竖直紧靠放置于高温炉的钼坩埚内。 竖直紧靠放置的优点在于 （请补充） 片材不 容易发生变形， 可以在高温下快速复合。
所述蓝宝石片材水平叠放在一平整度和蓝宝石片材一致的宝石支撑板上， 但支撑板不进行抛光， 再将支撑 板作为载具放入高温炉的钼坩埚中。 这种水平放置的优点在于 （请补充） 由于上下两片需要复合的宝石在 重力作用下产生正压力， 表面容易贴实而在较低温度下产生复合。
所述蓝宝石片材由第一蓝宝石片和第二蓝宝石片组成， 其中第一蓝宝石片晶面取向是 a向， 第二蓝宝石片 晶面取向是 c向。
所述蓝宝石片材由蓝宝石表片和蓝宝石底片组成， 蓝宝石底片由一块中心片和四个角片组成， 中心片和角 片拼合面积与蓝宝石表片一致。
本方案克服了单片蓝宝石片材的缺陷， 同时与 2个完整蓝宝石片材复合的方案相比， 具有更好的强度和韧 性， 因为蓝宝石表片和中心片、 角片的晶向组合更为多样， 可以充分利用蓝宝石各晶向的特性。 而且降低 了成本。 在触摸屏的实际应用中， 发生跌落时大部分的情形为边角线落地， 因此边角部位的特别加强具有 现实意义，而现有技术中大多用圆形倒角来减轻应力集中，但这种方案没有从根本上解决边角易碎的问题， 而中心片与角片的方案彻底解决了上述问题。
所述角片的两个边角存在直线倒角。 直角倒角的作用在于将角片之间的接触方式从点接触改为线接触， 提 高了复合结构的抗剪切力。
所述中心片为棱形片， 所述角片为边角设有直线倒角的三角片。
所述中心片的表层晶面为 a向、 c向或 r向， 所述蓝宝石表片的表层晶面与中心片表层晶面不相同， 所述 角片的边缘晶向与蓝宝石表片的边缘晶面不相同。
所述角片的边缘晶向为 m向。 说 明 书
升温和降温速度要小于 200度 /小时， 以免热冲击带来破碎。为使炉内杂质挥发不污染产品炉压控制在负大 气压， 保护气体可以是氦气、 氩气或氮气， 保护炉内热场不受氧化。 为使材料很好的键合必须达到 1500 摄氏度以上， 但要低于宝石的熔点 2050摄氏度， 如果高于熔点晶体材料将熔化报废。 保温时间要 1~15小 时， 宝石抛光面就能键合粘在一起。
1、 复合面技术参数控制：
先将要复合的两层或两层以上的蓝宝石片材的复合面抛光， 表面粗糙度 Ra达到 1纳米以下， 平整度 TTV<5微米， LTV<1.5微米， 翘曲度 <10微米。 这样的抛光面才能很好的贴合， 不至于在复合后存在光楔 角而出现干涉环影响产品的外观造成缺陷。
2、 热复合片子的晶向控制
为达到防止裂紋产生和扩张的效果， 这里采用的两层或两层以上的宝石片材的相邻两层的晶面不同或侧 面的晶轴取向不同晶向复合， 如第 1片的晶面是 a向第 2片是 c向； 又如第 1片晶面是 a向但横向取向是 和 m轴夹角 45度， 第 2片的晶面是 a向但横向取向是 r轴方向。 如两层以上只需相邻两层不同即可达到 效果。
3、 为达到高温复合采取的高温炉装载物理工位方法
第一种方案是将要符合的抛光面叠合， 不需要复合的片子不要抛光， 以免粘接无法拿开。 竖直放在钼坩 埚内可以将要复合的片子全部靠实， 便于抛光面完全接触， 有利高温键合。
第二种方案是将要复合的片子叠放在一平整度和片子一样的厚的宝石支撑板上， 但支撑板不要抛光以免 和产品粘住。 再将支撑板作为载具放入高温炉的钼坩埚中， 这样层间压力更利于片子键合为一体。
4、 为使片材复合需要控制的高温炉技术参数
当要符合的宝石片材放入高温炉内时， 升温和降温速度要小于 200度 /小时， 以免热冲击带来破碎。 为使 炉内杂质挥发不污染产品炉压控制在负大气压， 保护气体可以是氦气、 氩气或氮气， 保护炉内热场不受氧 化。 为使材料很好的键合必须达到 1500摄氏度以上， 但要低于宝石的熔点 2050摄氏度， 如果高于熔点晶 体材料将熔化报废。 保温时间要 115小时， 宝石抛光面就能键合粘在一起。
5、 将因高温键合而粘接为一体的两层或两层以上的宝石片材进行外形尺寸加工和抛光达到工件的技术要 求。
本发明还提供了一种用于检测切割面偏离角的测量方法，利用倒棱的方法结合 X衍射仪、投影仪进行计算， 求得侧边角度偏差， 保证产品高强度的一致性。
蓝宝石晶体切割时用于检测切割面偏离角的测量方法， 其特征在于该测量方法包括以下步骤： 步骤一、 首先在大面为 a面的蓝宝石晶锭上用偏振光仪、 X射线晶向仪晶向仪晶向仪检出 c轴、 m轴； 在 于 c轴、 m轴夹角为 45度的方向画出块料所需的尺寸；
步骤二、 将晶锭在单线切割机上切割为按步骤一所设定尺寸的毛坯， 再放到平面磨上倒出 45度的倒角， 倒角大小不影响到晶片的加工余量， 倒角为 c面或 m面；
步骤三、将倒好角的毛坯放到 X射线晶向衍射仪上测出 c面或 m面的偏离角 a的大小， 再将毛坯放到投影 仪上测出 b角大小； 利用三角形内角公式算出 c角大小； c角就是要检测的偏离角， 偏离角计算公式： c= ( 135+a) -b 。
注意 x射线晶向衍射仪检测的偏离角的对应的的毛坯正反面要和投影时的偏离角的正反面对应。
利用本方案可以较为准确的测量蓝宝石晶体偏离角， 得到强度更好的切割产品。
本发明的另一个发明目的在于， 提供一种硬度更的触摸屏。
为实现上述目的， 本发明所采用的技术方案是：
一种蓝宝石 OGS触摸面板， 其特征在于， 包括上层蓝宝石盖板、 中层触摸传感器、 下层绝缘保护层， 所 述蓝宝石盖板包括边缘非触控区和中间触控区， 所述触摸传感器附于盖板触控区下面， 蓝宝石盖板的非触 控区下面附有遮光材料层， 触摸传感器与 FPC之间的连接线路依附于遮光材料层下面， 绝缘保护层从下面 覆盖触摸传感器及连接线路。
所述蓝宝石盖板为双层不同晶面取向的蓝宝石片复合而成， 上层蓝宝石层为 C面蓝宝石层， 下层蓝宝石层 为 A面蓝宝石层。
所述遮光材料层为印刷在蓝宝石基板的非触控区下面的油墨层。 说 明 书
所述触摸传感器为基于双层 ITO导电膜蚀刻加工形成的投射电容传感器。
本发明通过对蓝宝石进行切片及复合加工等工艺， 将蓝宝石处理成适于作为触摸屏基板的薄片， 并且通过 复合加工， 改善了其物理特性。 由于蓝宝石硬度高于绝大多数矿物， 手机等智能设备在日常使用过程中， 所接触到的各种物体， 均难以在基于蓝宝石材质制作的触摸屏盖板上划出划痕。 使用基于蓝宝石晶体材料 制作的触摸板盖板， 用户完全可以摆脱贴膜的困扰。 使触摸屏本身的高透低反射等优点充分发挥出来。 给 曰常使用带来完美的用户体验。
而采用 C面取向的上层蓝宝石层则具有更高的硬度， 下层复合具有更高的断裂模量的 A面取向蓝宝石层， 使基于蓝宝石制作的触摸屏盖板在发挥蓝宝石高硬度特性的同时， 还具有更高的强度， 使得触摸屏成品具 有更强的抗摔能力。
本发明另一个目的在于， 针对上述蓝宝石触摸面板提出一种蓝宝石 OGS触摸面板的制作方法， 其特征在 于， 包括以下步骤：
( 1 ) 加工蓝宝石基板；
取形状大小相同的单面经研磨的两片晶向取像不同的蓝宝石片， 其中第一片为 A面蓝宝石片， 第二片为 C 面蓝宝石片， 将第一片蓝宝石片的经研磨表面与第二片蓝宝石片的经硏磨表面接合得到复合后的蓝宝石基 板半成品；
对复合蓝宝石基板半成品上下表面， 及侧边进行研磨后， 得到蓝宝石基板。 蓝宝石基板的上下表面晶向取 向分别为 C面取向和 A面取向；
(2) 在蓝宝石基板表面制作遮光层薄膜；
利用真空磁控溅射的方法或丝印方法在蓝宝石基板的 C面取向表面制作均匀的遮光材料层；
(3 ) 对遮光层薄膜通过光刻技术图形化；
通过涂胶、 曝光、 显影、蚀刻和去膜等工艺将附于蓝宝石基板触控区的遮光材料层去除， 形成不透光边框；
(4) 制作透明导电层；
利用真空磁控溅射的方法在制作透明导电层薄膜，
然后通过涂胶、 曝光、 显影、 坚膜、 蚀刻和去膜工艺对透明导电层薄膜进行图形化；
(5 ) 将带有触控 IC 芯片的 FPC通过热压与所述电极引脚进行电学连接， 形成最终的 OGS触摸屏。 作为优化方案， 所述蓝宝石片材由蓝宝石表片和蓝宝石底片组成， 蓝宝石底片由一块中心片和四个角片组 成， 中心片和角片拼合面积与蓝宝石表片一致。
本方案克服了单片蓝宝石片材的缺陷， 同时与 2个完整蓝宝石片材复合的方案相比， 具有更好的强度和韧 性， 因为蓝宝石表片和中心片、 角片的晶向组合更为多样， 可以充分利用蓝宝石各晶向的特性。 而且降低 了成本。 在触摸屏的实际应用中， 发生跌落时大部分的情形为边角线落地， 因此边角部位的特别加强具有 现实意义，而现有技术中大多用圆形倒角来减轻应力集中，但这种方案没有从根本上解决边角易碎的问题， 而中心片与角片的方案彻底解决了上述问题。
作为进一步的优化方案， 所述角片的两个边角存在直线倒角。 直角倒角的作用在于将角片之间的接触方式 从点接触改为线接触， 提高了复合结构的抗剪切力。
作为进一步的优化方案， 所述中心片为棱形片， 所述角片为边角设有直线倒角的三角片。
与采用有机玻璃板的触摸面板的加工方法相比， 本发明的蓝宝石触摸面板的加工过程虽然增加了蓝宝石基 板的制作工艺， 但是省略了两次化学强化工艺， 并不比现有玻璃面板的加工工艺复杂。 却可以得到更优秀 的耐磨防划效果。
可以想到的是， 采用本发明所述的蓝宝石基板， 也可以制作基于 OGS 以外的其它结构的触摸屏， 如 G/G 结构的触摸屏， 将蓝宝石应用于在 G/G结构的触摸屏中时， 蓝宝石片用做最上层盖板。
本发明的另一个目的是提供一种蓝宝石薄片的加工方法。 该工艺需要使用某种粘合剂将多片蓝宝石薄片进 行粘合提高厚度， 从而提高单片蓝宝石薄片的材料强度； 后使用 CNC数控设备， 对粘合后的蓝宝石薄片 块进行 CNC数控加工， 以高转速磨削， 低进给的方式加工蓝宝石； 同时提供了一种蓝宝石薄片的非圆孔 打工工艺。
一种蓝宝石薄片的加工方法， 其特征在于该加工方法包括以下步骤：
步骤一， 将多片蓝宝石薄片进行加温， 在蓝宝石薄片的表面涂抹粘合剂， 将蓝宝石片进行层叠粘合、冷却； 说 明 书
以蓝宝石薄片粘合数量控制粘合后蓝宝石块料的厚度；
步骤二， 将粘合后的蓝宝石块料置于数控机床上进行磨削和打孔。 将较薄的蓝宝石薄片结合成一个较厚的
±夬料， 可以利用现有 CNC数控机床的夹具进行磨削加工， 解决了薄片加工存在厚度限制的问题， 理论上 可以加工厚度为 0.1mm的蓝宝石薄片。
所述粘合剂的主要组分为改性环氧树脂和氨基聚醚。
所述粘合剂为主要组分为改性环氧树脂和氨基聚醚的极性粘合剂。
上述两种方案中的粘合剂在粘结时可提供足够的粘结力， 同时又可在特定的洗液中洗去， 可实现多层薄片 的多次磨削； 极性特性更易被洗脱液洗脱。
所述打孔包括在蓝宝石薄片内部进行的圆形孔和带有弧形倒角的非圆形孔， 非圆形孔的制孔过程如下： 在蓝宝石薄片表面画好标线， 选取圆形钻头在标线的端点处进行贯通打孔；
将标线平均分为至少两段， 在分线段的端点处进行贯通打孔；
钻头以高转速磨削低进给的方式进行水平移动， 实现分线段的连通操作。
所述分线段的长度不大于钻头的直径的 2~4倍。
所述分线段的长度等于钻头直径的 2倍。
发明人研究得出， 分线段长度、 钻头直径的比例关系与打孔良品率的存在关联， 不合适的比例关系将造成 边界不平整以及崩边率上升的问题。
所述制孔过程的步骤 C， 钻头带 10° ~ 45° 水平倾角的方式进行横向移动， 实现分线段的连通操作。 所述制孔过程的步骤 C， 两个钻头带 10° 45 ° 水平倾角的方式进行横向相对移动， 实现分线段的连通操 作。
所述制孔过程的步骤 C, 两个钻头分别带 10° ~ 45° 和 135 ° 170° 水平倾角的方式进行横向相向移动， 实现分线段的连通操作。
本发明的另一个目的是提供一种光学级蓝宝石触摸面板的清洗工艺， 该工艺能通碱性清洗剂对产品表面的 污渍、 油脂产生皂化、 乳化现象来清洁产品， 控制工件的表面的洁净度。 使用碱性液体清洗， 即可是设备 损伤减到最小， 又能满足产品表面的质量。 同时可以同时烘干多片蓝宝石片， 其数量能达到 40 片到 100 片之内， 很大的提高清洗效率。
本发明通过多槽超音波清洗的方法来清洗产品。
一种蓝宝石触摸面板的清洗方法， 其特征在于由以下步骤组成：
一种蓝宝石触摸面板的清洗方法， 其特征在于由以下步骤组成：
将装有待清洗的蓝宝石触摸面板工件的清洗筐置于多槽超声波清洗机的清洗槽中进行分步清洗， 其中第 1 槽和第 2槽内置碱性清洗液， 第 3槽、 第 4槽、 第 5槽、 第 6槽和第 7槽内置纯水， 第 8槽、 第 9槽和第 10槽内置 IPA溶液， 第 11槽使用煤油烘干， 其中第 1槽、 第 2槽和第 3槽温度 75度， 第 11槽温度 110 度。
进一步地， 所述清洗筐内放置了 41片蓝宝石触摸面板工件。
进一步地，所述第 1槽为质量分数 20%的氢氧化钾溶液，第 2槽为质量分数 0.02%的硫酸钠溶液；所述 IPA 溶液为纯异丙醇。
进一步地， 所述第 1槽： 温度 75度， 清洗时间 180秒； 第 2槽： 温度 75度， 清洗时间 120秒； 第 3槽： 温度 75度， 清洗时间 180秒； 第 4槽： 室温， 喷淋时间 30秒； 第 5~10槽： 室温， 清洗时间 60秒； 第 11 槽： 温度 110度， 烘干时间 30秒。
进一步地， 所述第 1槽为质量分数 20%的氢氧化钾溶液， 第 2槽为质量分数 0.01%的碳酸氢钠溶液。 进一步地，所述第 1槽中为质量分数 15%的氢氧化钠溶液，第 2槽中为质量分数 0.02%的磷酸二氢钾溶液。 进一步地， 所述第 1槽中为质量分数 20%氢氧化钾溶液与质量分数 0.02%硫酸钠溶液按 1 :2配比组成的混 合清洗剂； 第 1槽为质量分数 0.02%的硫酸钠溶液。
根据本发明清洗工艺获得的蓝宝石触摸面板， 表面无可见污渍、 油渍， 达到 100%。 本清洗方案涉及的清 洗剂组分较少， 清洗废液不会对环境造成大的影响， 产品清洗数量增加， 清洗效率提高。
在蓝宝石加工过程中， 研磨会造成较大的应力， 产品翘曲度增大， 使抛光难度大大增加， 本发明的另一个 发明目的是提供了一种方便实用的蓝宝石加工过程中的退火方法， 主要用于切割、 研磨后的蓝宝石晶片。 说 明 书
对蓝宝石晶片进行此退火处理， 可以有效去除切割、 研磨过程中的加工应力， 采用该方法退火的晶片加工 应力基本消除， 晶片退火均匀， 退火后的晶片翘曲度小， 利于后期抛光加工。
所述退火方法由以下步骤组成：
步骤一， 将蓝宝石晶体置于退火炉中， 封闭炉腔； 抽真空去除炉腔内空气以及混有的杂质， 并且持续充入 高纯氮气进行保护， 氮气流量稳定在 5~10L/min;
步骤二， 逐步升温 8小时至 1450°C， 升温速比 3°C/min,在此升温速率下， 晶体受热较均匀， 达到设定温度， 步骤三， 保持温度在 1450 持续 8小时；
步骤四， 设定缓慢降温， 降温速比 1.25°C/min ， 程序设定降温 16小时从 1450°C至 250°C， 到 250°C后， 程序关闭， 炉内仍旧持续充入氮气， 降温至 150°C， 关闭氮气， 开炉自然冷却。
本发明的退火优势在于：
1.可以有效去除产品应力， 有利于后道工序加工；
2.退火周期短， 可以提高生产效率， 降低生产成本；
3.操作程序简单， 方便， 过程易控。
本发明有较大的优势， 可以提高产品的良品率， 具有可观的经济效益。
所述步骤一中， 持续充入氮气并稳定流量， 为蓝宝石晶片提供了一个清洁、 稳定的退火环境。
所述步骤二中， 在升温过程中持续通入氮气并按正比速率升温， 减少了不必要的分步保温步骤， 不仅不影 响晶片的退火质量， 而且减少了退火时间， 提高了生产效率。
所述步骤三中， 保温过程中， 有持续氮气充入保护， 在此阶段， 产品有一个应力释放的过程。
所述步骤四中， 降温过程中， 降温速率较慢， 持续通入氮气有利于稳定降温速率， 提供较好的降温环境。 本发明的另一个目的是提供一种光学级蓝宝石触摸面板的研磨减薄工艺， 该工艺能通过研磨压力、 研磨盘 转速、 研磨颗粒粒径、 磨料浓度、 磨料流量来控制工件的减薄速率、 表面损伤层深度。 以提高成品率及成 品表面质量。
为实现上述目的， 本发明提供一种蓝宝石触摸面板的两面研磨方法： 将蓝宝石片置于上、 下硏磨盘之间进 行研磨， 在上、 下研磨盘之间供给碳化硼研磨液， 控制压力在 200KG-300KG, 控制转速在 20-30rpm/min。 用碳化硼 （摩氏硬度为 9.3 )研磨液， 压力在 200KG-300KG, 转速在 20-30rpm/mm， 上下刚玉研磨盘内进 行研磨的过程。
所述碳化硼 （化学式 B4C) 为一种陶瓷材料， 摩氏硬度为 9.3， 略大于刚玉硬度， 以此为研磨材料， 对蓝 宝石片进行研磨， 可以保持较高的减薄速率， 同时有效防止表面损伤层厚度过大。 通过控制研磨压力及转 速， 有效降低了蓝宝石片的破损率。 根据本发明的研磨工艺获得的蓝宝石触摸面板， 一次性合格率大于 95%, 表面粗糙度小于 6u， TTV小于 10u。
作为一种改进， 为了提高研磨效率， 并保证蓝宝石片的低破损率， 提出一种变速研磨方法， 该方法在上述 研磨方法基础上， 包括先后执行的第一研磨步骤和第二研磨步骤， 其中，
第一研磨步骤： 压力控制在 280-300KG, 上、 下研磨盘等速旋转， 转速控制在 20-22 rpm/min， 研磨液流量 控制在： 8-10L/min。
第二研磨步骤： 压力控制在 200-220KG, 上、 下研磨盘等速旋转， 转速控制在 28-30 rpm/min， 研磨液流量 控制在： 6-8L/min。
上述改进方案， 首先对初始蓝宝石片采用大压力， 低转速， 大流量的方式进行硏磨， 可有效增加减薄速率， 提高研磨效率。 然后对更薄的蓝宝石片采用低压力， 高转速， 小流量的方式进行研磨， 防止更薄的蓝宝片 碎裂。
由于蓝宝石的晶向特性， 将蓝宝石用于触摸面板时， 优选双层复合不晶面取向的蓝宝石片， 或蓝宝石片与 其它材料复合。 这导致蓝宝石面板的两面具有不同的硬度防裂等特性。 对此， 本发明做出更进一步改进， 提出如下研磨方法，
方法一 ·· 针对蓝宝石面板为双层复合不晶面取向的蓝宝石片， 其中， 上表面为 A面， 下表面为 C面， 将复 合的蓝宝石片的 C面朝下置于上、 下研磨盘之间， 控制上研磨盘转速低于下研磨盘转速。
进一步地， 将上下表面隔开， 上下表面研磨液分别供给， 控制上表面与上研磨盘之间的研磨液供给速度小 于下表面与下硏磨盘之间的硏磨液供给速度。 说 明 书
再进一步地， 将研磨过程按先后分为第一研磨步骤和第二研磨步骤
第一研磨步骤： 压力控制在 280-300KG, 上研磨盘转速控制在 20-22 rpm/min, 上层研磨液流量控制在： 8-9L/min， 下研磨盘转速控制在 22-24 rpm/min, 下层研磨液流量控制在 9-10L/min。
第二硏磨步骤： 压力控制在 200-220KG, 上研磨盘转速控制在 26-28 rpm/min, 上层研磨液流量控制在： 6-7L/min, 下研磨盘转速控制在 28-30 rpm/min， 下层研磨液流量控制在 7-8L/min。
方法二： 针对蓝宝石面板为蓝宝石片与玻璃复合加工而成的双层材料， 其中， 上层为蓝宝石层， 下层为玻 璃层， 将蓝宝石层朝下置于上、 下研磨盘之间， 控制上研磨盘转速低于下研磨盘转速。
进一步地， 将蓝宝石片上下表面隔开， 针对上下表面， 研磨液分别供给， 控制上表面与上研磨盘之间的硏 磨液供给速度小于下表面与下研磨盘之间的研磨液供给速度。
再进一步地， 将研磨过程按先后分为第一研磨步骤和第二研磨步骤；
第一研磨步骤： 压力控制在 280-300KG, 上研磨盘转速控制在 20-22 rpm/min, 上层研磨液流量控制在： 8-9L/min, 下研磨盘转速控制在 22-24 rpm/min, 下层研磨液流量控制在 9-10L/min。
第二研磨步骤： 压力控制在 200-220KG, 上研磨盘转速控制在 26-28 rpm/min, 上层研磨液流量控制在： 6-7L/min, 下研磨盘转速控制在 28-30 rpm/min, 下层硏磨液流量控制在 7-8L/min。 本发明的另一个目的是提供一种光学级蓝宝石触摸面板的 CMP工艺， 该工艺不仅可以满足蓝宝石触摸面 板的加工要求， 而且工艺简单， 能有效降低加工成本。
将蓝宝石触摸面板置于上下抛光盘之间进行， 用 2种 Si02抛光液， 抛光盘采用无纺布抛光垫粘于上下抛 光盘上， 下盘转速控制在 20-30转 /分之间， 压力控制在 200-300kg之间， 温度控制在 28-33°C之间； 在双 面抛光机上完成抛光过程。
按照本发明的 CMP工艺获得的蓝宝石触摸面板， 一次性合格率大于 80%, 面板的表面粗糙度小于 5nm， 平面度小于 5 μ ιη， 厚薄尺寸公差小于 ± 10 μ ηι。
作为一种改进， 为了提高抛光效率， 并保证蓝宝石片的低破损率， 提出一种变速抛光方法， 该方法在 上述抛光方法基础上， 包括先后执行的第一抛光步骤和第二抛光步骤， 其中，
第一抛光步骤：压力控制在 280-300KG,下盘转速控制在 28-30 rpm/min，抛光液粒径中 Si02为 75.0纳米， 抛光液流量控制在： 4-6L/min。
第二抛光步骤： 压力控制在 200-220KG, 上、 下抛光盘等速旋转， 转速控制在 20-22 rpm/min, 抛光液中 Si02粒径为 35.6纳米， 抛光液流量控制在： 2-4L/min。
上述改进方案， 首先对表面粗糙蓝宝石片采用大压力， 大转速， 大粒径， 大流量的方式进行抛光， 可有效 增加抛光去除速率， 提高抛光效率。 然后对经第一步抛光表面更光滑的蓝宝石片采用低压力， 低转速， 小 粒径， 小流量的方式进行精细抛光， 保证抛光的质量。 该改进方法可在保护抛光质量的前提下， 有效提高 抛光效率。
由于蓝宝石的晶向特性， 将蓝宝石用于触摸面板时， 做出更进一步改进， 提出如下抛光方法， 方法一： 针对晶面取向的蓝宝石片， 其中， 上表面为 C面， 下表面为 C面 (或上表面为 A面， 下表面为 A 面)， 将蓝宝石片的两面朝下置于上、 下抛光盘之间， 控制上抛光盘转速低于下抛光盘转速。
进一步地， 将上下表面隔开， 控制上表面与上抛光盘之间的抛光液供给速度大于下表面与下抛光盘之间的 抛光液供给速度。
再进一步地， 将抛光过程按先后分为第一抛光步骤和第二抛光步骤
第一抛光步骤： 压力控制在 280-300KG, 上抛光盘转速控制在 26-28 rpm/min, 上层抛光液流量控制在： 5-6L/min,下抛光盘转速控制在 28-30 rpm/mm，下层抛光液流量控制在 4-5L/min，抛光液粒径为 75.0纳米； 第二抛光步骤： 压力控制在 200-220KG, 上抛光盘转速控制在 20-22 rpm/min, 上层抛光液流量控制在： 3-4L/min，下抛光盘转速控制在 22-24 rpm/min，下层拋光液流量控制在 2-3L/min，抛光液粒径为 35.6纳米。 方法二： 针对蓝宝石面板为蓝宝石片单层材料， 将蓝宝石单层材料置于上、 下抛光盘之间， 控制上抛光盘 转速低于下抛光盘转速。
进一步地， 将蓝宝石片上下表面隔开控制上表面与上抛光盘之间的抛光液供给速度大于下表面与下抛光盘 之间的抛光液供给速度。 说 明 书
再进一步地， 将抛光过程按先后分为第一抛光步骤和第二抛光步骤；
第一抛光步骤： 压力控制在 280-300KG, 上抛光盘转速控制在 26-28 rpm/min, 上层抛光液流量控制在： 5-6L/min， 下抛光盘转速控制在 28-30 rpm/min, 下层抛光液流量控制在 4-5L/min， 抛光液中 Si02粒径为 75.0纳米；
第二抛光步骤： 压力控制在 200-220KG, 上抛光盘转速控制在 20-22 rpm/min, 上层抛光液流量控制在： 3-4L/min, 下抛光盘转速控制在 22-24 rpm/min, 下层抛光液流量控制在 2-3L/min， 抛光液中 Si02粒径为 35.6纳米。
进一步地， 所述抛光液中包含大豆软磷脂和聚氨酯， Si02粒径大小为 30-40和 70-80纳米。 发明人研究结 果证明， 包含大豆软磷脂和聚氨酯、 以及粒径大小为 30-40和 70-80纳米 Si02的抛光液， 具有更佳的蓝宝 石抛光效果， 可能是大豆软磷脂和聚氨酯的组合物中含有供 30-40和 (70-80纳米 Si02中微孔。
总体来说， 本发明的有益效果是： 可以制备大尺寸蓝宝石触摸面板， 消除机械加工损伤层， 获得表面晶格 完整、 平整度 <5微米、 抛光面粗糙度 <5纳米的超光滑表面， 该工艺缩短蓝宝石基片的加工时间， 降低 生产成本。 本发明的另一个目的是提供用于手机面板的一种蓝宝石薄片金刚线切割工艺， 该工艺需要使用某种粘合剂 将晶棒按特定晶向粘于一种可固定于切片机的工件夹具。 从特定晶格面， 用导线轮的高转速带动金刚线高 速运动切割。
一种蓝宝石薄片金刚线切片方法， 其特征在于所述切片方法包括以下步骤：
将蓝宝石晶块以 C轴或 M轴中心线为底面粘于工件表面， 切面为 A面；
用金刚线切割蓝宝石晶块获得蓝宝石薄片， 其中金刚线线径为 0.25mm, 金刚石粒径为 30-40 μ m; 线张力 为 35N, 线速度为 12m/s， 工件进给速度为 0.25mm/min， 切割液流量为 350ml/s。 发明人在实践中发现， 金刚线切割时， 工件给进速度与线速度的比值为 1 :2880000时， 金刚线不易发生断裂。
进一步地， 所述切割液温度为 25°C ±2°C。 申请人研究发现切割液温度与断线率为非线性关系。
进一步地， 所述工件摇摆角度为 2-10 ° ， 工件摇摆频率为 15-40Cir/mm。 蓝宝石硬度较高， 发明人研究得 出， 正常的线切割过程容易在金刚线与工件的接触线上沉积金刚石颗粒及蓝宝石碎屑， 这种沉积现象可能 是造成金刚线断线的主要因素之一， 为了解决这种沉积现象， 适当角度和频率的工件摇摆可以减少碎屑沉 积； 过高的摇摆角度和频率切面容易丢失， 不易切出平整的切面； 过低的角度难以起到除尘作用。
更进一步的， 所述工件摇摆角度为 5° ， 工件摇摆频率为 28Cir/min。 该条件下为最优条件。
所述金刚线切割蓝宝石晶块前先将未开刃金刚线切割废弃晶棒进行开刃。 发明人研究得出， 未经开刃的金 刚线直接切割蓝宝石晶块， 容易在造成崩边和定位不准。
进一步地， 所述其中金刚线线径为 0.25mm， 金刚石粒径为 30-40 μ m， 切割液中含有粒径为 20 μ m金刚石 颗粒和粒径为 50 μ m的刚玉颗粒。
申请人研究得出， 在切割液中加入金刚石颗粒和刚玉颗粒的混合物， 可以提高金刚线的使用寿命， 同时较 大粒径的刚玉颗粒可以将阻塞在金刚线与工件的接触线上沉积的金刚石颗粒及蓝宝石碎屑带走， 减少断线 率。
进一步地， 所述切割液组分含量按重量份如下： 去离子水 100-200， 粒径为 20 μ ηι金刚石颗粒 2-8， 粒径 为 50 μ ιη的刚玉颗粒 1-8， 分子量为 200的聚乙二醇 32， 硼酸酯 10-40。
进一步地，所述切割液组分含量按重量份如下： 去离子水 100，粒径为 20 μ πι金刚石颗粒 8，粒径为 50 μ πι 的刚玉颗粒 8， 分子量为 200的聚乙二醇 32， 硼酸酯 40。
进一步地，所述切割液组分含量按重量份如下： 去离子水 100，粒径为 20 μ ηι金刚石颗粒 2，粒径为 50 μ m 的刚玉颗粒 1， 分子量为 200的聚乙二醇 32， 硼酸酯 10。
进一步地，所述切割液组分含量按重量份如下：去离子水 100，粒径为 20 μ πι金刚石颗粒 6，粒径为 50 μ πι 的刚玉颗粒 7， 分子量为 200的聚乙二醇 32， 硼酸酯 30。
上述方案的切割液配方， 经实践证明可以减少断线率， 提高切面的表面平整度。 本发明所要解决的另一个技术问题是， 提供一种蓝宝石片的单面抛光加工方法， 该加工方法尤其适用于厚 说 明 书
度在 1mm以下的蓝宝石片的抛光处理。
为解决上述技术问题， 本发明摒弃了传统双面抛光依赖于游行轮承载产品的工艺， 改为贴付于陶瓷盘增加 产品强度的单面抛光工艺。
本发明超薄蓝宝石片的抛光加工方法， 是将切割成片的蓝宝石片通过加热台加热到 120°C， 然后将固态蜡 涂于产品上再均匀贴合于陶瓷盘上， 再将贴好蓝宝石片的陶瓷盘放入单面抛光机上进行抛光。
进一步地， 切割成片的蓝宝石片的厚度为 0.1-lmm
所述切割成片的蓝宝石片的厚度进一步可缩小至 0.1-0.5
所述切割成片的蓝宝石片的厚度还可再进一步可缩小至 0.1-0.3mm
进一步地， 所述陶瓷盘的厚度≡530mm， 平面度≤Ξ5 μ ιη
进一步地， 所述蓝宝石片贴于陶瓷盘上后经冷却处理至室温， 再放入单面抛光机进行抛光处理。
进一步地， 所述蓝宝石片贴于陶瓷盘上后， 采用重物压在整个蓝宝石片上， 再进行冷却处理。
进一步地， 所述抛光的时间为 2小时。
进一步地，所述固态蜡的组份重量份为：粒径为 20 μ m的蓝宝石微粉 35-40，粒径为 30 μ m的微晶刚玉 1-5 硬脂酸 20-30， 微晶蜡 8-18， 羊毛脂 2-5， 乙酰胺 0.5-2
更进一步地， 所述固态蜡的组份重量份为： 粒径为 20 μ πι的蓝宝石微粉 38， 粒径为 30 μ πι的微晶刚玉 4 硬脂酸 20， 微晶蜡 18， 羊毛脂 5， 乙酰胺 2
本发明采用单面抛光工艺， 利用具有较大的厚度和强度的陶瓷盘为载体， 使蓝宝石片在高转速和高压力下 无任何变形， 所以很好地避免了蓝宝石片碎裂的问题， 且蓝宝石片能够承受更大的压力和转速， 也相应提 高了生产效率。用单抛设备加工每平方厘米产品可以加压到 0.5kg， 转速可以达到 60rpm， 而传统加工每平 方厘米仅为 0.2kg， 最高转速为 35rpm。 本发明的抛光加工方法对于加工厚度在 0.5mm 以下， 长度大于 120mm, 宽度大于 55mm的大面板具有重要的意义。 本发明所要解决的另一个技术问题是， 提供一种抗指纹效果好的蓝宝石材料。
为解决上述技术问题， 本发明的抗指紋蓝宝石材料依次包括蓝宝石层、 50ηιη-50 μ ιη 厚的过渡层和 1 Onm- 1 OOnm厚的抗指紋层。
进一步地， 所述蓝宝石层为单一蓝宝石材料层或蓝宝石复合材料层。
进一步地， 所述蓝宝石复合材料层由两层不同晶相的蓝宝石材料层复合得到。
进一步地， 所述蓝宝石复合材料层由 A相蓝宝石材料层和 C相蓝宝石材料层复合得到， 且 A相蓝宝石材 料层位于 C相蓝宝石材料层与过渡层之间， 使 A相蓝宝石层硬度高的特点得到更好发挥。
进一步地， 蓝宝石复合材料层由蓝宝石材料层与玻璃层复合得到， 且所述蓝宝石材料层位于玻璃层与过渡 层之间。
进一步地， 所述过渡层为经原位生成得到的硅的氧化物层、 钛的氧化物层或两者的混合物层， 用于增加蓝 宝石材料层与抗指紋层之间的附着力， 其中选用硅的氧化物效果更佳。
进一步地， 所述抗指纹层为含氟化合物层、 含硅化合物层或两者的混合物层。
进一步地， 所述抗指纹层为含氟化合物为硅氧烷类的长链含氟化合物， 所述含硅化合物为硅氧烷类的长链 含硅化合物， 其中含氟的化合物水接触角大， 含硅的化合物爽滑性好。
进一步地， 所述抗指纹层通过真空蒸镀或磁控溅射沉积到过渡层上得到。
与现有玻璃抗指纹材料相比， 本发明所提供的抗指纹蓝宝石材料具备了蓝宝石高硬度的特点， 其莫氏硬度 达到 9级（玻璃只有 7级）， 硬度更高、 耐划伤性能更优异， 其水接触角大于 100° ， 即抗指紋效果与玻璃 类材料一致， 远远优于普通蓝宝石材料的抗指纹效果， 同时手感更加滑爽， 其透过率大于 75%。 通过过渡 层的设置， 使抗指紋层能够牢固附着在蓝宝石材料层上， 本发明的抗指纹蓝宝石材料非常适宜用于手机、 平板电脑等各类电子产品的触摸窗口。 本发明所要解决的另一个技术问题是， 提供一种新的手机片， 该手机片通过对其整体形状的设计， 使其能 够更好地分散碰撞力， 提高使用寿命， 并更符合人工工程学， 手感更好。
为解决上述技术问题， 本发明的蓝宝石手机片， 包括一个第一表面和一个第二表面， 说 明 书
所述第一表面包括第一主平面、 Rlmm-R24mm的圆弧面和 R0.08mm-R0.12mm的边缘圆倒角， 所述圆弧面 位于第一主平面的四周边缘， 所述边缘圆倒角位于圆弧面的四周边缘。
进一步地， 所述圆弧面的宽度 L为 0.68mm-3.59mm。
进一步地， 所述第一主平面的表平面与圆弧面的连接侧相切； 所述边缘圆倒角与圆弧面的连接侧内切。 进一步地， 所述第二表面包括第二主平面和 CO.lmm的直倒角， 所述直倒角位于第二主平面的四周边缘。 进一步地， 该蓝宝石手机片的四个角为 R3mm-8mm的边角圆倒角， 用于保护边角， 其尺寸合理， 不仅能 有效起到保护作用 （半径过小时无法起到保护作用）， 而且整体美观度好， 且使加工简便。
进一步地， 该蓝宝石手机片上开设有与手机配套的按键孔及听筒孔， 所述按键孔及听筒孔在位于第一表面 侧的边缘设有 R0.08mm- R0.12mm的孔边圆倒角。
本发明将现有技术中边缘的直倒角改成了边缘圆倒角， 因此可以更好地分散碰撞力， 造成崩边缺口的概率 明显降低， 并增加了整个手机片的强度， 使用寿命更加长久。 在手机片的第一主平面与边缘圆倒角之间增 加了圆弧面， 使手机片外观更加美观， 在手握手机时， 手指位置刚好是该圆弧面的位置， 更加符合人体工 程学， 使用手感更加舒适。 且采用合理的弧面半径以及弧面宽度自然过渡， 其视觉上和触摸上立体感强更 强， 即视觉效果增强， 使用手感很好， 圆弧面合理的尺寸也使按键孔以及听筒孔能位于合理的位置， 使用 户操作手机更方便。 按键孔倒圆角之后使得使用按键时更加舒适， 手感很好。 而且不容易造成崩边， 使得 使用时更加安全， 不容易损坏按键。 听筒孔倒圆角之后更加贴合耳朵， 接听电话时更加舒适。 各圆倒角以 及圆弧面尺寸设置合理， 使其效果更加突出。 附图说明
图 1第 1片蓝宝石的晶面是 a向、 第 2片是 c向复合后成为一块的结构示意图。
图 2是第 1片蓝宝石晶面是 a向但横向取向和 m轴夹角 45度、 第 2片的晶面是 a向但横向取向是 r轴方 向复合后为一块的结构示意图。
图 3是第 1片蓝宝石晶面是 c向但横向取向是和 m轴夹角 90度、 第 2片的晶面是 c向但横向取向是 m轴 方向的 2英寸蓝宝石圆形片复合后成为一块的结构示意图。
图 4为蓝宝石表片和底片的结构示意图。
图 5为蓝宝石表片和底片的结构示意图 （棱片）。
图 6为蓝宝石表片和底片的结构示意图 （倒角）。
图 7为本发明检测切割面偏离角的测量方法步骤一蓝宝石晶锭示意图。
图 8为本发明检测切割面偏离角的测量方法步骤二蓝宝石晶锭示意图。
图 9为本发明检测切割面偏离角的测量方法倒角切割示意图。
图 10为本发明检测切割面偏离角的测量方法偏离角示意图。
图 11为本发明蓝宝石触摸面板结构示意图。
图 12为本发明蓝宝石触摸面板另一种结构示意图。
图 13为蓝宝石薄片的结构示意图。
图 14为本发明蓝宝石薄片非圆孔加工结构示意图。
图 15为本发明单钻头平移加工非圆孔结构示意图。
图 16为本发明单钻头水平倾角横移加工非圆孔结构示意图。
图 17为本发明双钻头水平倾角相对移动加工非圆孔结构示意图。
图 18为本发明双钻头水平倾角相向移动加工非圆孔结构示意图。
图 19为本发明的结构示意图。
图 20为本发明的蓝宝石层为单一蓝宝石材料层时的分解结构示意图。
图 21为本发明的蓝宝石层为蓝宝石复合材料层时的结构示意图。
图 11为不同晶相蓝宝石材料层复合时的结构示意图。
图 23为蓝宝石材料层与玻璃层复合时的结构示意图。 说 明 书
具体实施方式
实施例 1
将一片晶面为 a面和一片晶面为 r面的 5英寸长方形蓝宝石片材， 厚度为 0.4mm的蓝宝石单面抛光， 抛 光后表面粗糙度 Ra<0.2纳米, TTV<3微米, LTV0.5微米。抛光面叠合，竖直放入钼坩埚内，片子之间靠紧， 不留缝隙。放入氦气保护炉内， 炉内压力为 25托， 以 150度 /小时的升温速率加热到 1900摄氏度， 在 1900 摄氏度下保温 10小时， 再以以 150度 /小时的降温速率降至常温。 取出因高温键合粘在一起的复合蓝宝石 晶体片材， 再进行研磨仿形、 打孔、 抛光， 加工成 0.75厚的蓝宝石手机主镜片 （屏幕盖板）。 具有耐划伤、 高透过率、 高强度的手机镜片。
实施例 2
将第 1片晶面是 a向但横向取向是和 m轴夹角 45度， 第 2片的晶面是 a向但横向取向是 r轴方向， 的 4.5长方形英寸蓝宝石片材， 厚度为 0.35mm的蓝宝石单面抛光， 抛光后表面粗糙度 Ra<0.1纳米, TTV<2微 米, LTV<0.3微米。 抛光面叠合， 竖直放入钼坩埚内， 片子之间靠紧， 不留缝隙。 放入氦气保护炉内， 炉内 压力为 25托， 以 150度 /小时的升温速率加热到 1800摄氏度， 在 1800摄氏度下保温 15小时， 再以以 150 度 /小时的降温速率降至常温。 取出因高温键合粘在一起的复合蓝宝石晶体片材， 再进行研磨仿形、 打孔、 抛光， 加工成 0.65厚的蓝宝石手机主镜片 （屏幕盖板）。 具有耐划伤、 高透过率、 高强度的手机镜片。 实施例 3
将第 1片晶面是 a向但横向取向是和 m轴夹角 45度， 第 2片的晶面是 a向但横向取向是 r轴方向， 的 7 英寸长方形蓝宝石片材， 厚度为 0.4mm 的蓝宝石单面抛光， 抛光后表面粗糙度 Ra<0.1 纳米, TTV<2 微 米, LTVOJ微米。 抛光面叠合， 水平放在相同平整度经过研磨但未经抛光的蓝宝石平面载具上， 可以叠放 若干层， 再将载具放入钼坩埚内。 放入氦气保护炉内， 炉内压力为 25托， 以 150度 /小时的升温速率加热 到 1700摄氏度， 在 1700摄氏度下保温 15小时， 再以以 150度 /小时的降温速率降至常温。 取出因高温键 合粘在一起的复合蓝宝石晶体片材， 再进行研磨仿形、 打孔、 抛光， 加工成 0.75厚的蓝宝石手机平板电脑 屏幕盖板。 成为具有耐划伤、 高透过率、 高强度的电脑主屏镜片。
实施例 4
将第 1片晶面是 a向但横向取向是和 m轴夹角 45度， 第 2片的晶面是 a向但横向取向是 r轴方向， 的 7 英寸长方形蓝宝石片材， 厚度为 0.4mm 的蓝宝石单面抛光， 抛光后表面粗糙度 Ra<0.1 纳米, TTV<2 微 米, LTV<0.3微米。 抛光面叠合， 水平放在相同平整度经过研磨但未经抛光的蓝宝石平面载具上， 可以叠放 若干层， 再将载具放入钼坩埚内。 放入氦气保护炉内， 炉内压力为 25托， 以 150度 /小时的升温速率加热 到 1700摄氏度， 在 1700摄氏度下保温 15小吋， 再以以 150度 /小时的降温速率降至常温。 取出因高温键 合粘在一起的复合蓝宝石晶体片材， 再进行研磨仿形、 打孔、 抛光， 加工成 0.75厚的蓝宝石手机平板电脑 屏幕盖板。 成为具有耐划伤、 高透过率、 高强度的电脑主屏镜片。
实施例 5
将第 1片晶面是 c向但横向取向是和 m轴夹角 90度， 第 2片的晶面是 c向但横向取向是 m轴方向， 的 2 英寸蓝宝石圆形片材， 厚度为 0.7mm 的蓝宝石单面抛光， 抛光后表面粗糙度 Ra<0.1 纳米, TTV<2 微 米, LTV<0.3微米。 抛光面叠合， 水平放在相同平整度经过研磨但未经抛光的蓝宝石平面载具上， 可以叠放 若干层， 再将载具放入钼坩埚内。 放入氦气保护炉内， 炉内压力为 25托， 以 150度 /小时的升温速率加热 到 2000摄氏度， 在 2000摄氏度下保温 8小时， 再以以 150度 /小时的降温速率降至常温。取出因高温键合 粘在一起的复合蓝宝石晶体片材， 再进行研磨、 抛光， 加工成 1.35厚的蓝宝石激光窗口片。 成为具有高透 过率、 高强度的激光制导军用窗口片。
实施例 6
如图 4所示， 蓝宝石复合结构由表片 1、 中心片 21和角片 22组成。 中心片 21和角片 22组合面积与表片 1相等。
实施例 7
如图 5所示， 与实施例 6不同的是， 中心片 21为棱形片， 角片 22为三角片。
实施例 8
如图 6所示， 与实施例 7不同的是， 角片 22具有直线倒角 221。 说 明 书
实施例 9
a、 将使用面为 a面的毛坯切割块用 45度夹具在平面磨上倒角， 倒角与 c轴垂直。
b、 在 X射线晶向测试仪上读取数值。
C、 从读数除 2计算出倒角偏差 a=1.18。
d、 在投影仪上读出角度 b=135.046。
e、 算出偏离角。
C=135+l.18-135.046=1.134 (度）。
实施例 10
a、 将使用面为 a面的毛坯切割块用 45度夹具在平面磨上倒角， 倒角与 m轴垂直。
b、 在 X射线晶向测试仪上读取数值。
C、 从读数除 2计算出倒角偏差 a=0.67。
d、 在投影仪上读出角度 b=135.30。
e、 算出偏离角
C=135+0.67-135.30=0.37 (度）。
实施例 11
参照图 11， 该图所示为本发明所述 OGS触摸面板的一种具体结构， 包括上层蓝宝石盖板、 中层 ITO 导电层（加工成触摸传感器） 3a、 下层绝缘保护层 4a， 蓝宝石盖板包括边缘非触控区 8a和中间触控区 9a， 所述蓝宝石盖板包括上层 C面蓝宝石层 7a和下层 A面蓝宝石层 6a。 所述 ITO导电层 3a附于蓝宝石盖板 下层 A面蓝宝石层 6a对应触控区的表面，蓝宝石盖板的 A面蓝宝石层对应非触控区的表面附有油墨层 1， ITO导电层 3a与 FPC之间的连接线路 5a依附于遮光材料层下面， 绝缘保护层 4a从下面覆盖 ITO导电层 3a及连接线路 5a。
所述油墨层的厚度为 8nm-15nm。 所述 ITO导电层厚度为 10nm-20nm。
所述蓝宝石盖板厚度为 0.3mm-0.8mm。
所述蓝宝石盖板边缘加工有导角结构。
触摸面板的制作过程， 包括以下步骤。
( 1 ) 加工蓝宝石基板；
分别将晶面取向为 A面和 C面的两片蓝宝石片， 加工成形状和大小相同的薄片；
对加工好的两片蓝宝石薄片的一个表面进行研磨， 使表面更光洁平整；
将第一片蓝宝石片的经研磨表面与第二片蓝宝石片的经研磨表面接合得到复合后的蓝宝石基板半成 品， 其中 C面晶面取向的蓝宝石层的表面做为上表面， A面晶面取向的蓝宝石层的表面作为下表面； 对复合完成的蓝宝石基板半成品上、 下表面， 及侧边进行研磨后， 得到蓝宝石基板。 此时， 蓝宝石基 板的上下表面晶向取向分别为 C面取向和 A面取向；
在上述过程中， 单片蓝宝石片材厚度小于 0.4mm, 复合后， 分别从上下两面进行研磨， 成品厚度保护 在于 0.4mm-0.6mm之间；
(2 ) 在蓝宝石基板表面制作遮光层薄膜；
利用真空磁控溅射的方法或丝印方法在蓝宝石基板的 C面取向表面制作均匀的遮光材料层；
(3 ) 对遮光层薄膜通过光刻技术图形化；
通过涂胶、 曝光、 显影、 蚀刻和去膜等工艺将附于蓝宝石基板触控区的遮光材料层去除， 形成不透光 边框； 说 明 书
(4 ) 制作透明导电层；
利用真空磁控溅射的方法在制作透明导电层薄膜，
然后通过涂胶、 曝光、 显影、 坚膜、 蚀刻和去膜工艺对透明导电层薄膜进行图形化， 具体工艺参数： 镀膜真空度： 0.0卜 0.5Pa， 温度： 220~300°C， 透明导电层的厚度 10nm~20nm ；
涂布光刻胶， 将蚀刻的透明导电层覆盖， 光刻胶的厚度 1600~2000nm， 均匀性 5% 以内， 预烘温度： 80-90 °C ；
对光刻胶进行曝光，即在光刻胶上光刻电极图形，曝光条件为：紫外光波长 : 365nm，光通量：100 120mj， 透明导电层的电极图案的光罩是铬版， 距离基板的尺寸 100um~200um ；
对光刻胶显影并硬化， 采用 NaOH， 浓度 0.1 0.08MOL/L, 温度： 20~35°C， 时间 50 秒〜 120秒， 硬化 温度： 100-120 °C , 时间 30 35 分钟；
蚀刻透明导电层， 形成透明导电层电极图形， 蚀刻使用材料： HCL60%~65%十 HO240%~35%， 温度： 40-45 °C , 时间： 120~220秒；
去除光刻胶， 形成透明导电图案功能电极， 使用材料： NaOH, 浓度 2.0~1.5 MOL/L, 温度： 30~35°C， 时间 100秒〜 120 秒， 最后用纯水漂洗；
( 5 ) 将带有触控 IC 芯片的 FPC 通过热压与所述电极引脚进行电学连接， 形成最终的 OGS触摸屏。 实施例 12
如图 13 18所示， 将 4片蓝宝石薄片进行加温， 在蓝宝石薄片表面涂抹粘合剂后将 4片蓝宝石片进行叠合， 冷却。 以蓝宝石薄片粘合数量控制粘合后蓝宝石块厚度。 将蓝宝石块厚度控制在 10mm~15mm。 粘合剂为 主要成分为改性环氧树脂和氨基聚醚的极性粘合剂， 可根据需要进行拆除。
其中， 非圆孔的打孔方式为， 先在两端和中部打竖直孔， 然后水平平移。 分线段 L与钻头直径 R的关系为 2-4:1
使用 CNC数控三轴联动雕刻机， 磨削工具材料选用电镀金刚砂， 颗粒目数为 200目〜 1000目。 加工过程中， 线速度为 4m/s以上， 以高转速磨削， 低进给的方式加工蓝宝石。
加工参数： 蓝宝石片厚： 0.5mm; 粘合数量： 4pcs; 转速： 40000rpm/min (以 2mm直径磨头为例）； 进给：
0.02mm/次。 上述加工参数与蓝宝石薄片的成型有关。
按照本实施例的工艺加工蓝宝石薄片打孔， 粘合后可以有效防止蓝宝石薄片在加工过程中碎裂， 电镀金刚 砂磨头的高速低进给可以在坚韧的蓝宝石表面进行打磨， 并打孔。 以 CNC的数控加工精度控制所需孔的要 求， 孔的精度可以达至 IjO.Olmm, 良品率可达到 99%。
本实施例的另一个方案非圆孔的打孔方式为，先在两端和中部打竖直孔，然后钻头与水平方向夹角 10°~ 45° 水平横移。 这种方式可以降低对钻头整体强度要求， 加快加工过程， 节省加工时间。
分线段 L与钻头直径 R的关系为 2: 1。
本实施例的另一个方案方案非圆孔的打孔方式为， 先在两端和中部打竖直孔， 然后双钻头与水平方向夹角 10°~ 45°水平相对平行的横移。 这种方式可以降低对钻头整体强度要求， 加快加工过程， 进一步节省加工 说 明 书 时间。
分线段 L与钻头直径 R的关系为 4: 1。
本实施例的另一个方案方案非圆孔的打孔方式为， 先在两端和中部打竖直孔， 然后双钻头与水平方向夹角 10°~ 45°和 135°~170°水平相向横移。 这种方式可以降低钻头整体强度要求， 加快加工过程， 进一步节省加 工时间。
分线段 L与钻头直径 R的关系为 3: 1。
实施例 13
使用 11槽超声波清洗设备， 使用清洗筐内装片 41片， 第 1槽使用氢氧化钾清洗剂， 浓度 20%， 第 2槽使 用硫酸钠清洗剂浓度 0.02%， 第 3、 4、 5、 6、 7槽使用纯水， 第 8、 9、 10槽使用纯 IPA, 第 11槽使用煤 油， 超音波功率设定 2.0W, 加工参数：
第 1槽： 温度 75度， 清洗时间 180秒
第 2槽： 温度 75度， 清洗时间 120秒
第 3槽： 温度 75度， 清洗时间 180秒
第 4槽： 室温， 喷淋时间 30秒
第 5~10槽： 室温， 清洗时间 60秒
第 11槽： 温度 110度， 烘干时间 30秒
按照本实施例的工艺加工蓝宝石触摸面板， 产品表面去污、 去油合格率为 100%。
本方案可以有效的加各种尺寸蓝宝石面板， 有效控制产品洁净度， 该工艺成品率高， 生产成本低。
本实施例的另一个方案是第 1槽为质量分数 20%的氢氧化钾溶液，第 2槽为质量分数 0.02%的硫酸钠溶液。 本实施例的另一个方案是第 1槽为质量分数 20%的氢氧化鉀溶液， 第 2槽为质量分数 0.01%的碳酸氢钠溶 液。
本实施例的另一个方案是方案第 1槽中为质量分数 20%氢氧化钾溶液与质量分数 0.02%硫酸钠溶液按 1 :2 配比组成的混合清洗剂； 第 2槽为质量分数 0.02%的硫酸钠溶液。
本实施例的另一个方案是第 1槽中质量分数 15%的氢氧化钠溶液， 第 2槽中为质量分数 0.02%的磷酸二氢 钾溶液。
本实施例的另一个方案是第 1槽中质量分数 15%的氢氧化钠溶液， 第 2槽中为质量分数 0.02%的磷酸二氢 钾溶液， 第三槽中为质量分数为 0.02%的 EDTA二钠溶液。
本实施例的另一个方案是第三槽中为质量分数为 0.02%的 EDTA二钠溶液。
本实施例的另一个方案是第 1槽中为质量分数 20%氢氧化钾溶液与质量分数 0.02%硫酸钠溶液按 1 :2配比 组成的混合清洗剂； 第 2槽为质量分数 0.02%的硫酸钠溶液
本实施例的另一个方案是第 3槽为质量分数为 0.05%的醋酸溶液。
实施例 14
一种用于蓝宝石加工过程中的退火方法， 由以下步骤组成：
步骤一， 将蓝宝石晶体置于退火炉中， 封闭炉腔； 抽真空去除炉腔内空气以及混有的杂质， 并且持续 充入高纯氮气进行保护， 氮气流量稳定在 5L/min;
步骤二， 逐步升温 8小时至 1450 °C， 升温速比 3°C/min,在此升温速率下， 晶体受热较均勾， 达到设定 温度，
步骤三， 保持温度在 1450°C 持续 8小时；
步骤四， 设定缓慢降温， 降温速比 1.25'C/min ， 程序设定降温 16小时从 1450°C至 250 ， 到 250°C 说 明 书 后， 程序关闭， 炉内仍旧持续充入氮气， 降温至 150°C， 关闭氮气， 开炉自然冷却。
本实施例的另一个方案是， 氮气流量稳定在 6L/min。 申请人研究得出， 氮气流量在 6L/min时， 气体 扰流和湍流现象较少， 同时能提供最佳的流体升降温环境。 扰流和湍流现象会弓 I发晶体表面的毛燥和不均 匀， 对稳定的应力释放不利。
本实施例的另一个方案是， 氮气流量稳定在 10L/min。 申请人发现， 10L/ min的气体流量具有更快的 升降温效率， 但是会产生扰流和湍流， 只有在炉腔体积 300L以上时， 扰流和湍流现象较小。
本实施例的另一个方案是， 氮气流量稳定在 8L/min。
本实施例的另一个方案是， 氮气流量稳定在 6L/min。
步骤四， 设定缓慢降温， 降温速比 1.25°C/min ， 程序设定降温 16小时从 1450°C至 250°C， 到 250°C 后， 程序关闭， 启动升温程序， 升温速比 3°C/min， 炉内仍旧持续充入氮气， 升温至 310摄氏度后， 启动 降温程序， 降温至 150°C后， 关闭氮气， 开炉自然冷却。
申请人发现， 在步骤四的降温过程中加入一个升温工序， 对蓝宝石晶体表面的强度有增强作用， 特别 是含尖角部分的蓝宝石晶体， 其韧性大为提高， 不易断裂。
本实施例的另一个方案是， 本方案采用氩气和氮气的混合气替代单一的氮气， 氩气和氮气的比例为 1: 10。 申请人发现， 在氮气中掺入适量的氩气， 有利于提高退火后蓝宝石晶体的表面平整度， 减少表面毛 刺。
本实施例的另一个方案是， 本方案采用氦气和氮气的混合气替代单一的氮气， 氦气和氮气的比例为 3: 10。 申请人发现， 在氮气中掺入适量的氦气， 有利于提高退火后蓝宝石晶体的表面平整度， 减少表面毛 刺。
实施例 15
选择磨料粒径为 12-14u左右， 碳化硼研磨液浓度为 19%对单层或双层蓝宝石触摸面板进行双面研磨 减薄加工， 加工参数： 压力： 250KG, 转速： 25rpm/min， 流量： 8L/mm， 时间： 30min， 按照本实施例的 工艺加工蓝宝石触摸面板， 去除率达到 1.3u/min， 表面粗糙为 3.5u， TTV为 6u， 合格率为 98%。 本发明可 以有效的加工大尺寸蓝宝石面板， 控制产品 TTV 的， 获得较小的表面粗糙度， 较浅的损伤层深度。 该工 艺可以缩短抛光时间， 降低生产成本。
本实施例的另一个方案是： 选择磨料粒径为 12- 14U左右， 碳化硼研磨液浓度为 19%对单层或双层蓝 宝石触摸面板进行双面等速研磨减薄加工，包括第一研磨步骤，加工参数：压力： 280KG,转速： 23rpm/min， 流量： 8L/min， 时间： 16min; 第二研磨步骤， 加工参数： 压力： 240KG, 转速： 28rpm/min， 流量： 8L/min， 时间： 8mm; 按照本实施例的工艺加工蓝宝石触摸面板， 平均去除率达到 1.5u/min， 表面粗糙为 3.5u， TTV 为 6u， 合格率为 97.6%。 本实施例的另一个方案是： 选择磨料粒径为 12-14u左右， 碳化硼研磨液浓度为 19%对双层复合蓝宝石触摸面板进行双面等速研磨减薄加工， 所述蓝宝石面板上表面为 A面， 下表面为 C 面。 将蓝宝石触摸面板 C面朝下， 置于上、 下研磨盘之间， 蓝宝石片上下表面隔开， 针对上下表面， 研磨 说 明 书
液分别供给。 具体参数如下： 压力： 280KG, 上研磨盘转速： 24rpm7min， 下研磨盘转速： 28rpm/min， 上 表面研磨液流量： 6L/min， 下表面研磨液流量： 8L/min， 时间： 26min; 按照本实施例的工艺加工蓝宝石 触摸面板， 平均去除率达到 1.40u/min， 双表面粗糙度均达到 3.4u， TTV为 6u， 合格率为 97.4%。
本实施例的另一个方案是： 选择磨料粒径为 12- 14U左右， 碳化硼研磨液浓度为 19%对双层复合蓝宝 石触摸面板进行双面等速研磨减薄加工， 所述蓝宝石面板上表面为 A面， 下表面为 C面。将蓝宝石触摸面 板 C面朝下， 置于上、 下研磨盘之间， 蓝宝石片上下表面隔开， 针对上下表面， 研磨液分别供给。
具体研磨步骤包括第一研磨步骤， 加工参数： 压力： 280KG, 上研磨盘转速： 23rpm/min， 下研磨盘转 速： 25rpm/min， 上表面研磨液流量： 6L/min， 下表面研磨液流量： 8L/min， 时间： 16min; 第二研磨步骤， 加工参数： 压力： 240KG, 上研磨盘转速： 27rpm/min， 下研磨盘转速： 29rpm/min， 上表面研磨液流量： 6L/min, 下表面研磨液流量： 8L/min， 时间： 8min; 按照本实施例的工艺加工蓝宝石触摸面板， 平均去除 率达到 1.53u/min， 双表面粗糙度均达到 3.5u， TTV为 6u， 合格率为 97.9%。
实施例 16
在压力为 250kg， 温度为 28-33 的条件下， 利用双面抛光机和纳米抛光液对蓝宝石触摸面板进行抛光， 使 蓝宝石触摸面板的表面粗糙度达到 5nm以下、 无应力、 无翘曲变形。
工艺参数为： 抛光液中 Si(¾微粒直径为： 35.6nm， 抛光盘转速： 25转 /分， 抛光时间 t=300min， 抛光 压力 p=250kg， 抛光液的 pH=9.6， 抛光温度： 28-33 °C， 抛光液流量： 4L/min。
按照本实施例的 CMP工艺获得的蓝宝石触摸面板，一次合格率为 86.5%，面板的表面粗糙度为 0.5nm， 平面度为 4μπι， 厚薄尺寸公差为 8μπι。
本实施例的另一个方案是：选择磨料粒径为 35.6nm和 75.0 的 Si02抛光液，对蓝宝石触摸面板进行 双面抛光加工， 抛光液的 pH=9.6( 0j)， 抛光温度： 28-33 °C， 具体包括，
第一抛光步骤， 加工参数： 压力： 280KG, 转速： 2&pm/min， 抛光液中 S\Q 粒径: 75.0 流量： 4L/min， 时间： 160min; 第二抛光步骤， 加工参数： 压力： 240KG, 转速： 23rpm/min， 抛光液中 S Oi粒径: 35.6 流量： 4L/min， 时间： 80min;
按照本实施例的工艺加工蓝宝石触摸面板， 一次合格率为 88.7%, 面板的表面粗糙度为 0.5nm, 平面 度为 4μηι, 厚薄尺寸公差为 8μηι。
本实施例的另一个方案是： 选择磨料粒径为 75.0nm的 Si02抛光液， 对蓝宝石触摸面板进行双面抛光 加工， 抛光液的 pH=10.1， 抛光温度： 28-33 °C， 所述蓝宝石面板上表面为 C面， 下表面为 C面 (或上表面 为 A面， 下表面为 A面)。 将蓝宝石触摸面板置于上、 下抛光盘之间， 蓝宝石片上下表面隔开，
具体参数如下： 压力： 280KG, 上抛光盘转速： 24rpm/min， 下抛光盘转速： 28rpm/min， 上表面抛光液流量： 5L/min， 下表面抛光液流量： 3L/min， 时间： 260min;
按照本实施例的工艺加工蓝宝石触摸面板， 一次合格率为 85.8%， 面板的表面粗糙度为 0.5nm， 平面 度为 4μηι， 厚薄尺寸公差为 8μηι。 说 明 书 本实施例的另一个方案是： 选择磨料粒径为 35.6nm(75.0Wm)的 Si02抛光液，对蓝宝石触摸面板进行双 面抛光加工， 抛光液的 ρΗ=9.6(70. )， 抛光温度： 28-33 °C， 所述蓝宝石面板上表面为 C面， 下表面为 C 面 (或上表面为 A面， 下表面为 A面：)。将蓝宝石触摸面板置于上、 下抛光盘之间， 蓝宝石片上下表面隔开， 具体抛光步骤包括， 第一抛光步骤， 加工参数： 压力： 280KG, 上抛光盘转速： 27rpm/mm， 下抛光盘转速： 29rpm/min， 抛光液中 S\Q2粒径: 80.0 上表面抛光液流量： 5L/min， 下表面抛光液流量： 3L/min， 时间： 160min; 第二抛光步骤， 加工参数： 压力： 240KG, 上抛光盘转速： 23rpm/min， 下抛光盘转速： 25rpm/min， 抛光液中 S C 粒径: 306
上表面抛光液流量： 5L/min， 下表面抛光液流量： 3L/min， 时间： 80min;
按照本实施例的工艺加工蓝宝石触摸面板， 一次合格率为 89.1%, 面板的表面粗糙度为 0.5nm, 平面 度为 4μηι, 厚薄尺寸公差为 8μηι。
本实施例的另一个方案是： 本方案的两步抛光作业在上下两个独立的密闭空间内进行， 上表面抛光液 与下表面抛光液互不连通。
本实施例的另一个方案是： 本方案的抛光液中的大豆软磷脂、聚氨酯和 Si02的摩尔比为 1 : 1 : 1.5。发明 人硏究发现， 在此比例下抛光液的抛光效果最佳。
本实施例的另一个方案是： 本方案的抛光液中的大豆软磷和 Si02的摩尔比为 1 : 1.5。
本实施例的另一个方案是： 本方案中抛光液中的聚氨酯和 Si〇2的摩尔比为 1 : 1.5。
本实施例的另一个方案是： 本方案中抛光液中的大豆软磷脂、 聚氨酯和 Si(¾的摩尔比为 1 :2: 1.5。 本实施例的另一个方案是： 本方案上表面抛光液与下表面抛光液单向连通， 上表面抛光液可流向蓝宝 石下表面， 而下表面抛光液不能倒流进上表面。
实施例 17
将蓝宝石晶块以 C-axis和 M-axis中心线为底面粘于工件表面， 切面为 A-plane。 金刚线线径： 0.25mm， 金刚 线金刚石粒径： 30-40μηι。 将未开刃金刚线切割废弃晶棒开刃。 加工参数： 张力： 35Ν, 线速度： 12m/s， 工件进给： 0.25mm/min， 切割液流量： 350ml/s， 切割液温度： 25 C 工件摇摆角度： 5°， 工件摇摆频率： 28cir/mino按照本实施例的蓝宝石金刚线切割工艺获得的蓝宝石薄片，一次合格率为 97 % ,平面度为 ΙΟμηι, 翘曲为 ΙΟμηι, 厚薄尺寸公差为 12μηι。 本发明的有益效果是： 可以制备大尺寸蓝宝石触摸面板毛坯产品， 该工艺缩短蓝宝石切片的加工时间， 提高生产质量， 降低生产成本。
本实施例的另一个方案是： 本方案加工参数： 张力： 35Ν， 线速度： 9.6m/s， 工件进给： 0.2mm/min， 切割 液流量： 350ml/s， 切割液温度： 35°C， 工件摇摆角度： 1 工件摇摆频率： 15cir/min。
本实施例的另一个方案是： 本方案加工参数： 张力： 35N, 线速度： 12m/s， 工件进给： 0.25mm/min， 切割 液流量： 350ml/s， 切割液温度： 35°C， 工件摇摆角度： 10°， 工件摇摆频率： 40cir/min。
本实施例的另一个方案是： 本方案加工参数： 张力： 35N, 线速度： 9.6m/s， 工件进给： 0.2mm/min， 切割 说 明 书
液流量： 350ml/s， 切割液温度： 45°C， 工件摇摆角度： 5°， 工件摇摆频率： 28cir/min。
本实施例的另一个方案是： 本方案金刚线中金刚石的粒径为 50μιη， 切割液中金刚石的粒径为 30-40μιη。 较 大粒径的金刚线与较小粒径的切割液配合， 可以提高蓝宝石晶块的表面平整度， 可以切割出低于 2mm厚度 的蓝宝石薄片。
本实施例的另一个方案是：本方案切割液组分含量按重量份如下：去离子水 100，粒径为 20μηι金刚石颗粒 2， 粒径为 50μηι的刚玉颗粒 1， 分子量为 200的聚乙二醇 32， 硼酸酯 10。
本实施例的另一个方案是： 本方案所述切割液组分含量按重量份如下： 去离子水 150， 粒径为 20μηι金刚石 颗粒 6， 粒径为 50μηι的刚玉颗粒 5， 分子量为 200的聚乙二醇 32， 硼酸酯 20。
本实施例的另一个方案是： 本方案所述切割液组分含量按重量份如下： 去离子水 200， 粒径为 20μηι金刚石 颗粒 8， 粒径为 50μηι的刚玉颗粒 8， 分子量为 200的聚乙二醇 32， 硼酸酯 40。
本实施例的另一个方案是： 本方案所述切割液组分含量按重量份如下： 去离子水 120， 粒径为 20μιη金刚石 颗粒 4， 粒径为 50μπι的刚玉颗粒 4， 分子量为 200的聚乙二醇 32， 硼酸酯 15。
本实施例的另一个方案是： 本方案所述切割液组分含量按重量份如下： 去离子水 180， 粒径为 20μηι金刚石 颗粒 7， 粒径为 50μηι的刚玉颗粒 7， 分子量为 200的聚乙二醇 32， 硼酸酯 40。
实施例 18
将 0.5mm厚， 且长度为 145mm， 宽度为 66mm的蓝宝石片通过通用的加热台加热到 120°C， 再将熔 点为 80°C的固态蜡均匀的涂抹在产品上， 再用 10kg的重物压在整个蓝宝石片上， 让其均匀地贴合于陶瓷 盘上， 再将陶瓷盘移动到通用的冷却盘上（冷却温度在 15°C以下）冷却， 等陶瓷盘的温度达到室温时取下 陶瓷盘，装入单面抛光设备，将设备压力定为产品每平方厘米 0.5kg，转速 60rpm (即转速为 60转每分钟）， 加工时间设定为 2h， 开启设备抛光产品， 到达时间后下机取片， 用同样的流程加工第二个面， 完成整个产 品的抛光。
所述固态蜡的组份重量份为： 粒径为 20μηι的蓝宝石微粉 35， 粒径为 30μιη的微晶刚玉 1， 硬脂酸 20， 微晶蜡 8， 羊毛脂 2， 乙酰胺 0.5。
本实施例的另一个方案是： 蓝宝石片厚度为 0.4mm， 长度为 130mm， 宽度为 60mm。
所述固态蜡的组份重量份为： 粒径为 20μιη的蓝宝石微 40， 粒径为 30μηι的微晶刚玉 5， 硬脂酸 30， 微晶蜡 18， 羊毛脂 5， 乙酰胺 2。
本实施例的另一个方案是： 蓝宝石片厚度为 0.1mm, 长度为 125mm， 宽度为 57mm。
所述固态蜡的组份重量份为： 粒径为 20μηι的蓝宝石微粉 38， 粒径为 30μιη的微晶刚玉 4， 硬脂酸 20， 微晶蜡 18， 羊毛脂 5， 乙酰胺 2。
本实施例的另一个方案是： 蓝宝石片厚度为 0.7mm， 长度为 150mm， 宽度为 69mm。 说 明 书 所述固态蜡的组份重量份为： 粒径为 20μπι的蓝宝石微粉 38， 粒径为 30μπι的三氧化二铝粉 10， 硬脂 酸 20， 微晶蜡 18， 羊毛脂 5， 乙酰胺 2。
本实施例的另一个方案是： 蓝宝石片厚度为 lmm， 长度为 180nmi， 82mm。
所述固态蜡的组份重量份为：粒径为 20μπι的蓝宝石微粉 38，粒径为 40μπι的二氧化硅 4，粒径为 40μπι 的氧化锆 6， 硬脂酸 20， 微晶蜡 18， 羊毛脂 5， 乙酰胺 2。
各实施例中所得到的蓝宝石片， 可根据大小适用于手机、 平板电脑等各种产品。
实施例 19 本实施例涉及的抗指纹蓝宝石材料结构如图 19所示， 其分解结构示意图如图 20所示， 依次为蓝宝石 层 lb、 过渡层 2b、 抗指纹层 3b， 其中蓝宝石层 lb为 0.5mm厚的纯 A相蓝宝石材料层， 过渡层 2b为经原 位生成得到的硅的氧化物， 厚度为 80nm; 抗指纹层 3b为硅氧烷类的长链含氟化合物且厚度为 15nm， 抗 指纹层 3b通过真空蒸镀沉积到过渡层 2b上得到。
所得材料透过率为 82%， 水接触角为 116°， 莫氏硬度 9， 手感滑爽。
本实施例的另一个方案是： 其结构依次为蓝宝石层 lb、 过渡层 2b、 抗指紋层 3b， 其中蓝宝石层 lb为 0.4mm厚的纯 C相蓝宝石材料层， 过渡层 2b为经原位生成得到的硅的氧化物， 厚度为 950nm; 抗指纹层 3b为硅氧垸类的长链含硅化合物， 厚度为 60nm， 抗指紋层 3b通过真空蒸镀沉积到过渡层 2b上得到。
所得材料透过率为 85%, 水接触角为 112°, 莫氏硬度 9， 手感滑爽。
本实施例的另一个方案是： 其结构依次为蓝宝石层 lb、 过渡层 2 b、 抗指紋层 3 b， 蓝宝石层 1 b (由 蓝宝石材料层一 11 b与蓝宝石材料层二 12 b经热复合或胶黏剂复合， 其中蓝宝石材料层一 11 b为 0.3mm 厚的 A相蓝宝石材料层， 蓝宝石材料层二 12 b为 0.3mm厚的 C相蓝宝石材料层， A相蓝宝石材料层位于 过渡层 2 b与 C相蓝宝石材料层之间； 过渡层 1 b为经原位生成得到的硅的氧化物， 厚度为 45μηι; 抗指紋 层 3 b为硅氧烷类的长链含氟化合物， 厚度为 95nm， 抗指纹层 3 b通过真空蒸镀沉积到过渡层 2 b上得到。 所得材料透过率为 81%, 水接触角为 116° , 莫氏硬度 9， 手感滑爽。
本实施例的另一个方案是： 其分解结构示意图见图 21所示， 其结构依次为蓝宝石层 lb、 过渡层 2b、 抗指紋层 3b， 其中蓝宝石层 lb为蓝宝石材料层 l ib ' 与玻璃层 12b ' 经热复合或经胶黏剂复合， 其中蓝宝 石材料层 l ib ' 为 0.3mm厚的 C相蓝宝石材料层， 玻璃层 12b ' 厚度为 0.3mm， 蓝宝石材料层 l ib ' 位于 过渡层 2b与玻璃层 12b ' 之间。 其中过渡层 2b为经原位生成得到的钛的氧化物， 厚度为 lOOnm; 抗指紋 层 3b为硅氧烷类的长链含氟化合物， 厚度为 80mn， 抗指紋层 3b通过磁控溅射沉积到过渡层 2b上得到。
所得材料透过率为 81%， 水接触角为 116°， 莫氏硬度 9， 手感滑爽。
与玻璃层 12 ' 复合后， 既保证了硬度， 又使产品具有良好的透光率， 更主要的是降低了成本。
本实施例的另一个方案是： 其结构依次为蓝宝石层 lb、 过渡层 2b、 抗指紋层 3b, 其中蓝宝石层 lb为 说 明 书
0.4mm厚的纯 C相蓝宝石材料层， 过渡层 2b为经原位生成得到的硅氧化物与钛氧化物的混合物， 厚度为 30μπΐ; 抗指纹层 3b为含氟化合物与含硅化合物的混合物， 具体为硅氧烷类的长链含氟化合物以及硅氧烷 类的长链含硅化合物的混合物， 且厚度为 70mn， 抗指纹层 3b通过真空蒸镀沉积到过渡层 2b上得到。
所得材料透过率为 85%， 水接触角为 115°， 莫氏硬度 9， 手感滑爽。
本实施例的另一个方案是： 本方案过渡层与抗指纹层合二为一， 形成一个复合层， 复合层成分为 CH3 SiC12CH2CH2COOCH2( CF2CF2) nH( η= 1~ 6)。
对比例：
本对比例涉及的蓝宝石为 0.5mm厚的纯 A相蓝宝石层， 表面不进行抗指纹效果处理。
所得材料透过率为 82%, 水接触角为 76°， 莫氏硬度 9， 手感一般。
蓝宝石具有 A、 C、 M、 R等多种晶相， 原则上各晶相均可使用在本发明中， 尤其是用在蓝宝石复合材料层 中。 但根据不同晶相的性能， A相蓝宝石材料耐磨性能好， C相蓝宝石材料透光率高， 因此 A、 C两相跟其 他晶相比较更适合选用。
实施例 20
蓝宝石手机片， 如图 24-28所示， 该手机片包括一个第一表面和一个第二表面， 所述第一表面包括第一主平 面 lc、 R12mm且宽度 L为 2.53mm的圆弧面 2c和 RO.lmm的边缘圆倒角 3c， 所述圆弧面 2c位于第一主平面 1的 四周边缘， 所述边缘圆倒角 3c位于圆弧面 2c的四周边缘， 所述第一主平面 lc、 圆弧面 2c和边缘圆倒角 3c为 一体。
为了使第一主平面 lc、 圆弧面 2c和边缘圆倒角 3c的过渡更加自然， 第一主平面 lc的表平面与圆弧面 2c的连 接侧相切； 所述边缘圆倒角 3c与圆弧面 2c的连接侧内切。
所述第二表面包括第二主平面 4c和 CO. lmm的直倒角 5c， 所述直倒角 5c位于第二主平面 4c的四周边缘。 为保护该蓝宝石手机片的四个角， 四个角均设置为 R6mm的边角圆倒角 6c， 同时四个角倒圆角处理后使手 机片的线条更加柔和， 更加美观。
在该蓝宝石手机片上开设有与手机配套的按键孔 7c及听筒孔 8c， 所述按键孔 7c及听筒孔 80在位于第一表面 侧的边缘设有 RO.lmm的孔边圆倒角 9c。
在手机片厚度等尺寸一定的情况下， 圆弧面 2的半径越大， 其宽度 L也越大。 一般来说， 如果宽度 L过小， 其手感相对较差， 当宽度 L过大时， 则会导致按键孔 7c位置上移， 导致用户操作手机按键时不方便， 同时 也影响美观。
本实施例的另一个方案是： 圆弧面 2c为 R24mm且宽度 L3.59mm， 边缘圆倒角 3c为 R0.12mm, 孔边圆倒角 9c 为 R0.12mm, 边角圆倒角 6c为 R8mm。
本实施例的另一个方案是： 圆弧面 2c为 Rlmm, 且宽度 L0.68mm， 边缘圆倒角 3c为 RO.OSmm, 孔边圆倒角 9c 为 R0.08mm， 边角圆倒角 6c为 R4mm。

Claims

权 利 要 求 书
1. 一种蓝宝石热复合方法， 包括以下步骤：
步骤一， 将要复合的两层或两层以上的蓝宝石片材的复合面抛光， 其表面粗糙度 Ra达到 1纳 米以下， 平整度 TTV〈5微米， LTV〈1. 5微米， 翘曲度〈10微米；
步骤二， 将上述抛光后的蓝宝石片材按照晶面取向不同或侧面的晶轴取向不同进行晶面热复 合.
所述蓝宝石片材的热复合条件： 蓝宝石片材置于高温炉中复合， 复合温度高于 150CTC低于蓝 宝石熔点温度 205CTC ; 充入氦气、 氩气或氮气作为保护气； 保温时间为 1-15小时。
2. 根据权利要求 1 所述的蓝宝石热复合方法， 其特征在于所述蓝宝石片材抛光面间竖直紧 靠放置于高温炉的钼坩埚内。
3. 根据权利要求 1 所述的蓝宝石热复合方法， 其特征在于所述蓝宝石片材水平叠放在一平 整度和蓝宝石片材一致的宝石支撑板上， 但支撑板不进行抛光， 再将支撑板作为载具放 入高温炉的钼坩埚中。
4. 根据权利要求 1 所述的蓝宝石热复合方法， 其特征在于所述蓝宝石片材由第一蓝宝石片 和第二蓝宝石片组成， 其中第一蓝宝石片晶面取向是 a 向， 第二蓝宝石片晶面取向是 c 向。
5. 根据权利要求 1 所述的蓝宝石热复合方法， 其特征在于所述蓝宝石片材由蓝宝石表片和 蓝宝石底片组成， 蓝宝石底片由一块中心片和四个角片组成， 中心片和角片拼合面积与 蓝宝石表片一致。
6. 根据权利要求 5所述的蓝宝石热复合方法， 其特征在于所述角片的两个边角存在直线倒 角。
7. 根据权利要求 5所述的蓝宝石热复合方法， 其特征在于所述中心片为棱形片， 所述角片 为边角设有直线倒角的三角片。
8. 根据权利要求 5所述的蓝宝石热复合方法， 其特征在于所述中心片的表层晶面为 a向、 c 向或 r 向， 所述蓝宝石表片的表层晶面与中心片表层晶面不相同， 所述角片的边缘晶向 与蓝宝石表片的边缘晶面不相同。
9. 根据权利要求 5所述的蓝宝石热复合方法， 其特征在于所述角片的边缘晶向为 m向。
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