WO2015077925A1

WO2015077925A1 - Thermal compounding method for sapphire

Info

Publication number: WO2015077925A1
Application number: PCT/CN2013/087882
Authority: WO
Inventors: 吴云才
Original assignee: 浙江上城科技有限公司
Priority date: 2013-11-26
Filing date: 2013-11-26
Publication date: 2015-06-04

Abstract

The invention relates to a processing, compounding and applying technology for sapphire. Provided is a thermal compounding method for sapphire, which is used as a manufacturing method, cleaning method, and grinding and polishing method for a touch screen, and as a physical processing method for sapphire crystals. The method solves the technical problems of edge breakage, cracking, even fracturing of a monolithic sapphire, and the difficult technical problem of applying sapphire as a touch screen.

Description

Sapphire thermal composite method

Technical field

The present invention relates to sapphire processing, compounding, and applications.

Background technique

Since sapphire has a hardness close to that of diamond, Mohs hardness is 9. Excellent visible and infrared light, UV transmittance T> 85% (400-800 nm wavelength). And has excellent bending strength and elastic modulus, so it is used in high-end mobile phone screen main lens, watch lens, laser window, camera protection lens, laser barcode scanner window, touch screen protection cover. However, at present, single-layer sapphire sheets are used, and the two-layer or two-layer composite processing method involved here improves the processing yield and the antistatic pressure and impact strength of the sheet. Sapphire has anisotropy, and its sapphire crystal structure has a plurality of different crystal faces. Although each crystal face of sapphire is harder than other minerals, some crystal faces have other different characteristics. For example, C-plane sapphire has good optical transmittance and fracture toughness, and sapphire has higher compressive strength and wear resistance than other sapphire. The R- and M-side sapphires also have other advantages. U.S. Patent No. 6,130,236, 699 discloses a sapphire laminate structure comprising: a first layer of sapphire sheets having a first crystal plane orientation forming a major surface of a sapphire laminate structure, and a second layer of sapphire sheets having a second crystal plane orientation Forming a second major plane of the sapphire laminate structure, the two layers of sapphire sheets are fused together to form a sapphire laminate structure. Applicants believe that the above scheme is impossible to achieve. Sapphire belongs to the crystal structure. If the temperature of the fused sapphire sheet can approach or exceed the melting temperature of sapphire according to paragraph 24 of the specification, the characteristics of the crystal are certain. Melting point, once it is greater than the melting point, the material will melt. If the original shape is not maintained, the lattice collapse will occur, and the solid flaky form of the sapphire will not be maintained. Once the upper and lower sapphire pieces are fused, the material will spontaneously nucleate and become polycrystalline when the material melts, and its crystal orientation cannot be maintained. A uniform single crystal, so the sapphire laminate structure obtained by this method cannot maintain the shape of the original sheet and cannot be used for a touch screen.

Since the crystal has a textured surface, the processing always avoids the direction of the joint surface to prevent crack generation and expansion. When the main direction of the sapphire mobile phone with a crystal orientation is a, the side should be at 45 degrees with the angle of the m-axis. This avoids the vertical deviation from the 0, r and m axes of the sapphire crystal and is not easily damaged when subjected to external force. The crystal faces of the two side faces of such a green block have an angle of 45 degrees with respect to the c-axis and the m-axis. However, since the side-angle deviation is detected, since it is not a standard crystal face, the off-angle cannot be measured by an X-ray crystallizer. That is, since the side surface of the sapphire wafer has a 45 degree angle with the crystal axis, it is impossible to directly detect the angle by the X-ray diffractometer. At present, the manufacturer of the 45 degree angle is exempt from inspection during the manufacturing process. The 45-degree angle deviation has a great influence on the strength of the product, so there is an urgent need for a measurement method for solving the problem of measuring the off-angle of the side (cut surface).

The touch screen is an input device, which can conveniently realize the interaction between the human and the computer and other portable mobile devices. The functional area of the touch screen can be divided into a window-shaped touch area and a non-touch area border, and a flexible circuit board that provides electrical connection. FPC and data processing chip IC chip. In recent years, capacitive touch screens based on indium tin oxide (ITO) transparent conductive films have been widely used in mobile internet devices such as smart phones and portable tablets.

With the increasing demand for screen reflectivity, light transmittance and thinness of the mobile internet device, the conventional double-chip glass (high-hardness glass cover and glass with sensor electrodes) is laminated. Touch screens have been difficult to meet. A capacitive touch screen solution called OGS (One Glass Solution) has been proposed and promoted as an important direction for a new generation of touch screens.

The hierarchical structure of the OGS capacitive touch screen comprises: a glass cover plate; an ink layer printed on a lower side surface of the glass cover plate in a non-window area; a transparent conductive layer (ITO layer) continuously formed on the underside of the glass cover plate and the ink layer An electrode layer (connection line) electrically connected to the transparent conductive layer is formed in the non-window region; and an insulating protective layer is bonded through the OCA optical adhesive. The OGS structure capacitive touch screen directly forms the conductive and sensing electrodes on the back of the high-hardness protection glass cover, and uses the same glass to simultaneously serve the dual functions of touch protection and touch sensing. The existing touch screen glass cover is made of tempered plexiglass. Although the chemically strengthened tempered glass has higher hardness, its hardness is still limited. It is easy to form scratches on the surface of the panel during use. In order to protect the screen, a protective film needs to be attached to the screen of the mobile phone. The increase in the protective film not only affects the transmittance of the touch panel, but also the protective film itself is more likely to form a slip. Take the mobile phone as an example. From the start to the upgrade and update for three years, most of the time (may be two and a half years or even longer), the user is faced with a scratch-resistant protective film. What can be seen is that it has been costly and difficult to develop and improve the touch screen, and to improve its hardness and transparency little by little. However, the results are only reflected in the laboratory. In actual use, due to the use of the protective film, the technical results obtained by the huge cost cannot be directly converted into the user experience. In other words, if the developed or improved touch screen cover is not enough to get the user out of the protective film, then even if the results are significant, it is meaningless.

The only way to solve this problem is to seek to increase the hardness of the glass cover to a hardness or strengthening process that exceeds the vast majority of user-accessible materials, or to seek a hardness that exceeds the hardness of most user-accessible materials. The new material replaces the tempered plexiglass, allowing the user to completely get rid of the use of the screen protector film.

Sapphire is a crystal that is second only to diamonds, which is much larger than ordinary tempered glass. Moreover, high-purity (for example, 99% or more) sapphire has high optical transmittance and low scattering, which can effectively block the diffusion of light. In addition, sapphire has better radiation resistance and high thermal conductivity than ordinary glass. , high chemical stability, strong acid resistance, strong alkali, and many other advantages.

If it can be applied to a touch screen, it can bring about excellent results instead of the existing tempered plexiglass. Instruction manual

A sapphire sheet shape for an electronic touch panel has at least one outer contoured corner or at least one aperture. Outer contour fillets and holes include, but are not limited to, semi-circular and circular holes, but also curved and square holes, oval holes.

However, the processing of artificially grown sapphire into a larger diameter panel requires great economic cost, which makes it difficult to widely use and popularize. At the same time, the disadvantage of the sapphire sheet being high in brittleness and low impact resistance limits its scope of use.

For different requirements, sapphire thickness (0.1~1.5mm), shape requirements, etc. CNC machining of sapphire is an indispensable step to achieve the required requirements. The sapphire sheet is processed correspondingly to release its processing stress, improve material strength and impact resistance. Limited by the workpiece fixture of CNC machine tools, the yield of sapphire sheets below 1.5mm is not high and easy to break. At the same time, the prior art cannot process sapphire sheets of 0.5mm or less by CNC numerical control equipment.

At the same time, for the non-round hole punching process of the sapphire sheet, the processing time is too long, the corners are easy to stress concentrated, and the chipping or even chipping occurs.

With the continuous improvement of the performance of optoelectronic devices, the processing precision and surface quality of single crystal sapphire substrates are becoming higher and higher. It is necessary to chemically clean the surface of sapphire stone, which is a necessary process for controlling surface quality during processing.

Chinese Patent Publication No. 103111434A discloses a final cleaning process for sapphire processing, comprising the steps of: a: isopropanol cleaning; b: ethanol cleaning; c: deionized water cleaning; d: ammonia cleaning; e: deionized water cleaning: f : Phosphoric acid cleaning; g : Deionized cleaning; h : Hydrofluoric acid cleaning; i : Deionized water cleaning; j : Deionized water cleaning. After washing, use a dryer to dry. The technical solution disclosed by the invention can effectively remove residual polishing liquid, organic dirt and metal ions after polishing.

Chinese Patent Publication No. 102218410A discloses a method for cleaning sapphire after polishing, comprising the following steps: a. preparing a cleaning solution according to a weight ratio of hydrogen peroxide, ammonia water and deionized water = 1 : 4 : 5; b, cleaning with step a Wash liquid for 1 minute; c, wash with deionized water for 4 minutes; d, wash with sulfuric acid for 1 minute; e, wash with deionized water for 4 minutes; f, wash with hydrofluoric acid for 30 seconds; g, wash with deionized water 4 minutes; h, wipe with acetone; ! Wash with an ultrasonic cleaner for 2 minutes; _j, and finally use a dryer to carry out thousands. The invention adopts the above technical solution, and can effectively remove organic substances, inorganic substances, metal ions and the like remaining on the surface of the wafer, thereby avoiding prevention of repeated cleaning, and greatly improving the working efficiency of the D.

However, the above method involves more cleaning agent components, which is liable to cause secondary pollution. The drying can only be performed once, and the efficiency is low. At the same time, the cleaning waste liquid has a great influence on the environment, and currently there is a lack of a good cleaning effect and high efficiency. Sapphire touch panel cleaning method.

The artificially grown sapphire has good wear resistance, hardness is second only to diamond reaching Mohs class 9, and sapphire compactness makes it have a large surface tension. These two characteristics are very suitable for electronic touch panels such as mobile phones. However, artificially grown sapphire and sapphire flakes have higher brittleness and lower impact resistance, which limits their use. The artificially grown crystal has a large stress, has a symmetrical cracking surface, and will be self-fragmented with a slight tapping, which is not conducive to arbitrary cutting processing. In order to meet the special requirements of optical devices, it is indispensable for crystal annealing. In the process of sapphire processing, the annealing process that is often used has some stages of temperature rise and temperature reduction, the temperature control program is complicated and the cycle is long; and the other does not completely remove the stress generated during the processing of the gemstone, resulting in poor processing in the later stages. It increases the production cost or reduces the yield of gemstone chips.

In order to meet the requirements of the development of sapphire optics, a highly flat surface is required to perform chemical mechanical polishing (CMP) on sapphire; CMP is currently the only planarization technique that can achieve global planarization, and the surface of sapphire crystals is ultra-smooth. To a crucial role. CMP technology is a combination of mechanical grinding and chemical etching. It achieves global planarization of ultra-smooth nano-scale damage-free precision polishing by means of the polishing action of ultrafine particles and the chemical corrosion of the slurry. The basic method of CMP is to polish the wafer. In the liquid, it is rotated relative to the polishing pad and a certain pressure is applied to complete the polishing by mechanical friction and chemical corrosion.

The sapphire used for the touch panel has a relatively high surface quality. At present, the polishing process of the sapphire-based touch panel is performed by a regular polishing method, which is not effective.

Several trends in touch panels are OGS, in-cell or on-cdl. One of their characteristics is that a layer of ITO conductive layer is directly laminated under the sapphire sheet. Therefore, the polishing requirements of the upper and lower planes of the sapphire sheet may be inconsistent. There is no technology in the art to describe how to obtain a sapphire touch panel with inconsistent polish.

In the prior art, there is a lack of a cutting method for cutting a mature diamond wire into a sapphire sheet. The existing diamond wire cutting method is used for sapphire cutting, which has a fragile line, the surface of the cutting surface is not flat, and can not be cut at a time to obtain 2 mm or less. Sapphire sheet.

The existing sapphire products are thicker in thickness and relatively strong in relative strength. The conventional double-sided polishing equipment is used to process the product into a thinner parade wheel (clamp). However, with the development of technology, the weight and thickness of products are becoming more and more demanding. The thickness of sapphire is also thinner and thinner. For example, the current development direction of mobile phones is large screen, ultra-thin and low weight, and the density of sapphire is large. The larger the weight, the heavier the relative weight. In order to achieve the light and thin requirements of the mobile phone, the thickness of the sapphire can only be reduced. It is suitable to control the thickness of the gemstone below 0.7mm, such as thickness of 0.5mm, 0.4mm and 0.3mm. .

The traditional polishing process has a lot of problems during processing:

1. For sapphire products with a thickness of only lmm or even thinner, it is easily fractured under high pressure, resulting in a large number of damaged products;

2. Since the thickness of the sapphire is thinner, the thickness of the polishing parade will also change. Since the existing parade wheel is made of metal material, when the thickness is reduced, especially after the reduction to 0.5mm or less, the strength is seriously insufficient. It is easy to damage under the condition of polishing high pressure and high speed, resulting in extremely high product breakage rate, and even the entire batch of products is scrapped. Especially for large panels with a thickness of less than 0.5mm and a length of more than 120mm and a width of more than 55mm, it is more difficult to use traditional double-sided processing. The larger the area, the lower the thickness, so that the whole sheet is subjected to polishing. Description

The pressure is much larger than the small panel, and the polishing cloth itself is relatively soft and easy to compress, so the larger the sapphire sheet, the greater the amount of pressure deformation, and the more easily broken.

3, the market lacks a solid wax for single-sided polishing of sapphire, commercially available solid wax for sapphire sheet polishing effect is not good.

The requirement for the anti-fingerprint effect of glass materials is that the water contact angle reaches 115°. The higher the contact angle, the better the anti-fingerprint effect, and the water contact angle of sapphire itself is less than 90°, so the sapphire is applied to the touch screen of various electronic windows. It is necessary to carry out anti-fingerprint treatment, which can improve the anti-staining property of the screen and improve the hand feeling. Currently, there is a lack of a sapphire film anti-fingerprint treatment method.

However, although Ferrari and Vertu have successfully applied sapphire as a screen product, the overall structure of the sapphire is not ergonomic, and the edges are only subjected to straight chamfering (such as CO.lmm straight chamfer). , and the sides of the straight chamfer have obvious edges and corners, which are easy to cause chipping and chipping during the use of the mobile phone, and easy to cut hands, and the hand feel is not good when used.

Summary of the invention

The present invention provides a sapphire thermal composite process that solves the technical problems of single sapphire edges, cracking, and even cracking. When a single-layer sapphire crystal sheet has a textured surface in the process, the crystal material itself will collapse along a certain crystal direction of the joint surface during the processing and use. Cracks, even cracks. This is an inherent property of crystalline materials. In order to reduce the generation and expansion of cracks when subjected to external forces during processing and use, the present invention proposes a composite scheme of multilayer sheets, which utilizes the recombination of crystals to different sheets to increase the strength of the product, and is more suitable for The use of large-size mobile phone screens and touch tablets and military laser windows; solves the application limitations due to strength problems, allowing gemstone sheets to be made thinner, lighter and with superior performance.

A sapphire thermal composite method comprising the following steps:

Step one, polishing the composite surface of the two or more sapphire sheets to be composited, the surface roughness Ra of which is less than 1 nm, the flatness TTV<5 micrometers, the LTV<1.5 micrometers, and the warpage <10 micrometers;

Step 2, the polished sapphire sheet is subjected to crystal orientation thermal recombination according to different crystal plane orientation or crystal orientation of the side surface; thermal compositive condition of the sapphire sheet: sapphire sheet is composited in a high temperature furnace, composite Temperature above 1500 ° C below the melting point of sapphire

2050 °C; filled with helium, argon or nitrogen as shielding gas; holding time is 1-15 hours.

Applicants have found that sapphire sheets are bonded to sapphire sheet molecules under certain conditions of the above-described schemes in an environment below their hot melt temperature due to the increased thermal motion between the molecules. The surface roughness, flatness, LTV and warpage of sapphire sheets are closely related to the rate of thermal composite. The principle may be that the above factors affect the physical distance between the two sheets, which in turn affects the molecules between the sapphire sheets. Bonding process.

The polished surfaces of the sapphire sheets are vertically placed in close proximity to the molybdenum crucible of the high temperature furnace. The advantage of being placed vertically is that (please add) the sheet is not prone to deformation and can be quickly compounded at high temperatures.

The sapphire sheet is horizontally stacked on a gemstone support plate having a flatness and a uniform sapphire sheet, but the support plate is not polished, and the support plate is placed as a carrier in the molybdenum crucible of the high temperature furnace. The advantage of this horizontal placement is (please add) because the upper and lower pieces of the gemstone that need to be composited produce a positive pressure under the force of gravity, the surface is easy to stick and the composite is produced at a lower temperature.

The sapphire sheet is composed of a first sapphire sheet and a second sapphire sheet, wherein the first sapphire sheet is oriented in the a direction, and the second sapphire sheet is oriented in the c direction.

The sapphire sheet consists of a sapphire sheet and a sapphire sheet. The sapphire film consists of a center piece and four corner pieces. The center piece and the corner piece are in the same area as the sapphire piece.

This solution overcomes the defects of single-piece sapphire sheet, and has better strength and toughness than the combination of two complete sapphire sheets, because the combination of crystal orientation of sapphire and center piece and corner piece is more Diverse, you can make full use of the characteristics of each crystal orientation of sapphire. And it reduces costs. In the practical application of the touch screen, most of the cases when the drop occurs are the corners, so the special reinforcement of the corners has practical significance, while the prior art mostly uses round chamfers to reduce the stress concentration, but this kind of The solution does not fundamentally solve the problem of fragile corners, and the central and corner schemes completely solve the above problems.

There are straight chamfers at the two corners of the corner piece. The effect of the right angle chamfer is to change the contact between the corner pieces from point contact to line contact, which improves the shear resistance of the composite structure.

The center piece is a prismatic piece, and the corner piece is a triangular piece having a chamfered corner at a corner.

The surface crystal plane of the center piece is in the a direction, the c direction or the r direction, and the surface layer surface of the sapphire sheet is different from the surface layer surface of the center sheet, and the edge crystal orientation of the corner sheet and the edge of the sapphire sheet The crystal faces are different.

The edge of the corner piece has a crystal orientation in the m direction. Instruction manual

The heating and cooling speed should be less than 200 ° / h, so as not to cause thermal shock to break. In order to volatilize the impurities in the furnace, the furnace pressure is controlled at a negative atmospheric pressure, and the shielding gas may be helium, argon or nitrogen to protect the furnace from oxidation. In order for the material to bond well, it must be above 1500 degrees Celsius, but below the melting point of the stone by 2050 degrees Celsius. If the crystal material is higher than the melting point, the material will be melted and scrapped. When the holding time is 1~15 hours, the polished surface of the gemstone can be bonded and bonded together.

1. Compound surface technical parameter control:

The composite surface of two or more layers of sapphire sheets to be composited is first polished to have a surface roughness Ra of less than 1 nm, a flatness of TTV < 5 μm, an LTV of <1.5 μm, and a warpage of <10 μm. Such a polished surface can be well fitted, so that there is no wedge angle after the composite and the interference ring affects the appearance of the product to cause defects.

2. Crystal orientation control of hot composite sheets

In order to achieve the effect of preventing crack generation and expansion, the two adjacent layers of the two or more layers of the gemstone sheet used herein have different crystal planes or different crystal orientations of the side surfaces, such as the crystal plane of the first sheet. It is a direction in which the second piece is the c direction; and the first piece of the crystal face is the a direction, but the lateral direction is 45 degrees from the m axis, and the crystal plane of the second piece is the a direction, but the lateral direction is the r axis direction. If two or more layers are required, only two adjacent layers can be used to achieve the effect.

3. Method for loading physical station in high temperature furnace to achieve high temperature compounding

The first solution is to superimpose the polished surface to be conformed, and do not need to be composited without polishing, so that the bonding cannot be removed. Vertically placed in the molybdenum crucible, the sheets to be composited can be all solid, which facilitates the complete contact of the polished surface and facilitates high temperature bonding.

The second option is to stack the sheets to be laminated on a gemstone support plate that is as flat as the film, but the support plate should not be polished to avoid sticking to the product. The support plate is then placed as a carrier in the molybdenum crucible of the high temperature furnace, so that the interlayer pressure is more conducive to the film bonding.

4. Technical parameters of high temperature furnace for film composite control

When the gemstone sheet to be conformed is placed in a high-temperature furnace, the heating and cooling rate should be less than 200 ° / h to avoid breakage caused by thermal shock. In order to volatilize the impurities in the furnace and not to pollute the product, the furnace pressure is controlled at minus atmospheric pressure. The shielding gas may be helium, argon or nitrogen to protect the furnace from oxidation. In order for the material to bond well, it must be above 1500 degrees Celsius, but below the melting point of the stone by 2050 degrees Celsius. If it is higher than the melting point, the crystalline material will be melted and scrapped. The holding time is 115 hours, and the polished surface of the gemstone can be bonded together.

5. Two-layer or two-layer gemstone sheets bonded together by high-temperature bonding are processed and polished to meet the technical requirements of the workpiece.

The invention also provides a measuring method for detecting the deviation angle of the cutting surface, and the method of using the chamfering method combined with the X-ray diffractometer and the projector to calculate the side angle deviation to ensure the high strength consistency of the product.

The measuring method for detecting the off-angle of the cutting surface when the sapphire crystal is cut, characterized in that the measuring method comprises the following steps: Step 1: First, using a polarimeter, an X-ray crystallizer on the sapphire ingot with a large surface a side The crystal orientation meter detects the c-axis and the m-axis; and draws the required size of the block in the direction in which the c-axis and the m-axis are at an angle of 45 degrees;

Step 2: Cut the ingot on the single-line cutting machine into a blank of the size set according to step one, and then put it on the surface grinding machine to pour a chamfer of 45 degrees. The size of the chamfer does not affect the processing allowance of the wafer, chamfering Is c-plane or m-plane;

Step 3: Place the blank of the good angle on the X-ray crystal diffractometer to measure the deviation angle a of the c-plane or the m-plane, and then place the blank on the projector to measure the b-angle size; c angle size; c angle is the deviation angle to be detected, the deviation angle calculation formula: c = ( 135 + a) - b .

Note that the corresponding blank front and back surfaces of the off-angle detected by the x-ray crystallographic diffractometer correspond to the front and back sides of the off-angle at the time of projection.

By using this scheme, the off-angle of the sapphire crystal can be measured more accurately, and a cutting product with better strength can be obtained.

Another object of the present invention is to provide a touch screen having a higher hardness.

In order to achieve the above object, the technical solution adopted by the present invention is:

A sapphire OGS touch panel, comprising: an upper sapphire cover, a middle touch sensor, and a lower insulation protection layer, wherein the sapphire cover comprises an edge non-touch area and an intermediate touch area, and the touch sensor is attached to the cover Below the touch area of the board, a non-touch area of the sapphire cover is provided with a light shielding material layer, and a connection line between the touch sensor and the FPC is attached under the light shielding material layer, and the insulation protection layer covers the touch sensor and the connection line from below.

The sapphire cover is composed of two layers of sapphire sheets with different crystal plane orientations, the upper sapphire layer is a C-plane sapphire layer, and the lower sapphire layer is a A-side sapphire layer.

The light shielding material layer is an ink layer printed under the non-touch area of the sapphire substrate. Instruction manual

The touch sensor is a projected capacitive sensor formed based on a double-layer ITO conductive film etching process.

The present invention processes sapphire into a sheet suitable as a touch panel substrate by a process such as slicing and composite processing of sapphire, and improves physical properties by composite processing. Since the sapphire hardness is higher than most minerals, it is difficult for smart devices such as mobile phones to scratch scratches on the touch screen cover made of sapphire material during daily use. Using a touchpad cover made of sapphire crystal material, users can get rid of the film. The advantages of high transparency and low reflection of the touch screen itself are fully utilized. Bring a perfect user experience to your regular use.

The upper sapphire layer with C-plane orientation has higher hardness, and the lower layer has a higher rupture modulus A-plane oriented sapphire layer, so that the sapphire-based touch screen cover can exert the high hardness characteristics of sapphire while still With higher strength, the touch screen finished product has stronger anti-fall ability.

Another object of the present invention is to provide a method for fabricating a sapphire OGS touch panel for the sapphire touch panel described above, which is characterized in that it comprises the following steps:

(1) processing a sapphire substrate;

Take two sides of the same shape and the same shape to obtain different sapphire pieces, the first piece is A side sapphire piece, the second piece is C face sapphire piece, the first piece of sapphire piece is ground surface Joining the honed surface of the second sapphire sheet to obtain a composite sapphire substrate semi-finished product;

The upper and lower surfaces of the semi-finished product of the composite sapphire substrate and the side edges are ground to obtain a sapphire substrate. The orientations of the upper and lower surfaces of the sapphire substrate are respectively C-plane orientation and A-plane orientation;

(2) making a light shielding film on the surface of the sapphire substrate;

Forming a uniform light-shielding material layer on the C-plane orientation surface of the sapphire substrate by vacuum magnetron sputtering or silk screen method;

(3) patterning the light shielding layer film by photolithography;

Removing the light-shielding material layer attached to the touch area of the sapphire substrate by a process such as glue coating, exposure, development, etching, and film removal to form an opaque frame;

(4) making a transparent conductive layer;

Making a transparent conductive layer film by vacuum magnetron sputtering,

The transparent conductive layer film is then patterned by a glue coating, an exposure, a development, a hard film, an etching, and a film removal process;

(5) The FPC with the touch IC chip is electrically connected to the electrode pins by hot pressing to form a final OGS touch screen. As an optimization scheme, the sapphire sheet is composed of a sapphire sheet and a sapphire film, and the sapphire film is composed of a center piece and four corner pieces, and the center piece and the corner piece are combined in the same area as the sapphire piece.

As a further optimization, the two corners of the corner piece have a straight chamfer. The effect of the right angle chamfer is to change the contact between the corner pieces from point contact to line contact, which improves the shear resistance of the composite structure.

As a further optimization scheme, the center piece is a prismatic piece, and the corner piece is a triangular piece having a chamfered corner at a corner.

Compared with the processing method of the touch panel using the plexiglass plate, the processing process of the sapphire touch panel of the present invention increases the manufacturing process of the sapphire substrate, but omits the two chemical strengthening processes, and is no more than the processing technology of the existing glass panel. complex. But you can get better wear and scratch resistance.

It is conceivable that with the sapphire substrate of the present invention, a touch screen based on a structure other than OGS, such as a G/G structured touch screen, can be applied to a sapphire sheet in a G/G structure touch screen. Used as the top cover.

Another object of the present invention is to provide a method of processing a sapphire sheet. The process requires the use of a binder to bond multiple sapphire sheets to increase the thickness, thereby increasing the material strength of the single sapphire sheet; then using CNC numerical control equipment, CNC machining of the bonded sapphire sheet is performed. High-speed grinding, low-feed processing of sapphire; and a non-round hole work process for sapphire sheets.

A method for processing a sapphire sheet, characterized in that the processing method comprises the following steps:

Step one, heating a plurality of sapphire sheets, applying an adhesive to the surface of the sapphire sheet, laminating and bonding the sapphire sheets, and cooling; Instruction manual

Controlling the thickness of the bonded sapphire block by the amount of sapphire sheet bonding;

In step two, the bonded sapphire block is placed on a numerically controlled machine tool for grinding and punching. Combine thinner sapphire sheets into a thicker

±夬, can be ground by the fixture of the existing CNC machine tool, which solves the problem of thickness limitation of sheet processing. Theoretically, sapphire sheets with a thickness of 0.1mm can be processed.

The main components of the binder are modified epoxy resins and amino polyethers.

The binder is a polar binder whose main component is a modified epoxy resin and an amino polyether.

The adhesives in the above two solutions can provide sufficient adhesion when bonding, and can be washed away in a specific washing liquid, which can achieve multiple grinding of the multilayer sheet; the polarity characteristics are more easily washed. Deionization elution.

The punching comprises a circular hole made inside the sapphire sheet and a non-circular hole with a curved chamfer. The hole making process of the non-circular hole is as follows: draw a marking on the surface of the sapphire sheet, and select a circular drill bit Through-hole punching at the end of the marking line;

Dividing the reticle into at least two segments, and performing through punching at the end of the segment;

The drill bit moves horizontally at a high speed to grind the low feed to achieve the connection operation of the split line segment.

The length of the line segment is not more than 2 to 4 times the diameter of the drill bit.

The length of the split section is equal to twice the diameter of the drill.

The inventors have found that the proportional relationship between the length of the segment and the diameter of the drill is related to the existence of the perforation yield. The inappropriate proportional relationship will cause the boundary to be uneven and the edge collapse rate to rise.

In the step C of the hole making process, the bit moves laterally with a horizontal inclination of 10° to 45° to realize the connecting operation of the line segment. In step C of the hole making process, the two drill bits are laterally moved relative to each other with a horizontal inclination of 10° 45° to realize the connecting operation of the line segments.

In the step C of the hole making process, the two drill bits are laterally moved in a manner of 10° ~ 45° and 135 ° 170° horizontal inclination to realize the connecting operation of the line segments.

Another object of the present invention is to provide a cleaning process for an optical grade sapphire touch panel, which can clean the product by controlling the surface of the product with saponification and emulsification by using an alkaline cleaning agent to control the surface cleanliness of the workpiece. . Cleaning with alkaline liquids minimizes equipment damage and meets the surface quality of the product. At the same time, multiple sapphire pieces can be dried at the same time, and the number can reach 40 pieces to 100 pieces, which greatly improves the cleaning efficiency.

The present invention cleans the product by a multi-slot ultrasonic cleaning method.

A cleaning method for a sapphire touch panel, which is characterized by the following steps:

The cleaning basket containing the sapphire touch panel workpiece to be cleaned is placed in a cleaning tank of the multi-tank ultrasonic cleaning machine for stepwise cleaning, wherein the first tank and the second tank are filled with alkaline cleaning liquid, the third tank, the fourth tank, The 5th, 6th and 7th tanks contain pure water, the 8th, 9th and 10th tanks contain IPA solution, and the 11th tank uses kerosene to dry, of which the 1st, 2nd and 3rd tanks The temperature is 75 degrees, and the 11th bath temperature is 110 degrees.

Further, 41 sapphire touch panel workpieces are placed in the cleaning basket.

Further, the first tank is a potassium hydroxide solution having a mass fraction of 20%, and the second tank is a sodium sulfate solution having a mass fraction of 0.02%; and the IPA solution is pure isopropanol.

Further, the first tank: temperature 75 degrees, cleaning time 180 seconds; second tank: temperature 75 degrees, cleaning time 120 seconds; third tank: temperature 75 degrees, cleaning time 180 seconds; 4th tank: room temperature, Spray time 30 seconds; 5~10 tank: room temperature, cleaning time 60 seconds; 11th tank: temperature 110 degrees, drying time 30 seconds.

Further, the first tank is a potassium hydroxide solution having a mass fraction of 20%, and the second tank is a sodium carbonate solution having a mass fraction of 0.01%. Further, the first tank is a sodium hydroxide solution having a mass fraction of 15%, and the second tank is a potassium dihydrogen phosphate solution having a mass fraction of 0.02%. Further, in the first tank, a mixed cleaning agent consisting of a mass fraction of 20% potassium hydroxide solution and a mass fraction of 0.02% sodium sulfate solution in a ratio of 1:2; the first tank is a sodium sulfate solution having a mass fraction of 0.02%. .

The sapphire touch panel obtained according to the cleaning process of the present invention has no visible stains and oil stains on the surface, and reaches 100%. The cleaning solution involves less detergent components, and the cleaning waste liquid does not have a large impact on the environment, the amount of product cleaning increases, and the cleaning efficiency is improved.

In the sapphire processing, the grinding causes a large stress, the product warpage increases, and the polishing difficulty is greatly increased. Another object of the present invention is to provide a convenient and practical annealing method in the sapphire processing. Mainly used for cutting and grinding sapphire wafers. Instruction manual

The annealing treatment of the sapphire wafer can effectively remove the processing stress during the cutting and grinding process. The processing stress of the wafer annealed by the method is substantially eliminated, the annealing of the wafer is uniform, and the warpage of the wafer after annealing is small, which is favorable for post-polishing processing.

The annealing method consists of the following steps:

Step one, placing the sapphire crystal in an annealing furnace to close the furnace cavity; vacuuming to remove air and mixed impurities in the furnace cavity, and continuously filling with high-purity nitrogen for protection, and the nitrogen flow rate is stabilized at 5~10 L/min;

In step two, the temperature is gradually increased from 8 hours to 1450 ° C, and the heating rate is 3 ° C / min. At this heating rate, the crystal is heated uniformly, reaching the set temperature, step three, keeping the temperature at 1450 for 8 hours;

Step 4, set the slow cooling, the cooling rate is 1.25 °C / min, the program is set to cool for 16 hours from 1450 ° C to 250 ° C, after 250 ° C, the program is closed, the furnace is still filled with nitrogen, cooling At 150 ° C, the nitrogen is turned off and the furnace is naturally cooled.

The annealing advantages of the present invention are:

1. It can effectively remove product stress and facilitate subsequent processing;

2. The annealing cycle is short, which can improve production efficiency and reduce production cost;

3. The operation procedure is simple, convenient, and the process is easy to control.

The invention has great advantages, can improve the yield rate of the product, and has considerable economic benefits.

In the first step, the nitrogen gas is continuously charged and the flow rate is stabilized, which provides a clean and stable annealing environment for the sapphire wafer.

In the second step, the nitrogen gas is continuously supplied during the heating process and the temperature is raised at a proportional rate, which reduces unnecessary step-by-step heat preservation steps, which not only does not affect the annealing quality of the wafer, but also reduces the annealing time and improves the production efficiency.

In the third step, during the heat preservation process, there is continuous nitrogen filling protection, and at this stage, the product has a process of stress release.

In the fourth step, during the cooling process, the cooling rate is slow, and continuous nitrogen gas is beneficial to stabilize the cooling rate and provide a better cooling environment. Another object of the present invention is to provide a polishing and thinning process for an optical grade sapphire touch panel, which can control the thinning rate of a workpiece by grinding pressure, grinding disk rotation speed, abrasive particle size, abrasive concentration, and abrasive flow rate, Surface damage layer depth. To improve the yield and the surface quality of the finished product.

In order to achieve the above object, the present invention provides a two-side grinding method for a sapphire touch panel: the sapphire sheet is placed between the upper and lower honing discs for grinding, and the boron carbide polishing liquid is supplied between the upper and lower grinding discs, and the pressure is controlled. 200KG-300KG, control speed is 20-30rpm/min. Grinding with a boron carbide (Mohs hardness of 9.3), a pressure of 200KG-300KG, and a rotational speed of 20-30 rpm/mm, grinding in a corundum grinding disc.

The boron carbide (chemical formula B4C) is a ceramic material having a Mohs hardness of 9.3, which is slightly larger than the hardness of the corundum, and is used as an abrasive material to grind the sapphire sheet to maintain a high thinning rate while effectively preventing the surface. The thickness of the damage layer is too large. By controlling the grinding pressure and the speed of rotation, the breakage rate of the sapphire sheet is effectively reduced. The sapphire touch panel obtained by the grinding process according to the present invention has a one-time pass rate of more than 95%, a surface roughness of less than 6 u, and a TTV of less than 10 u.

As an improvement, in order to improve the grinding efficiency and ensure the low breakage rate of the sapphire sheet, a variable speed grinding method is proposed, which comprises, according to the above grinding method, a first grinding step and a second grinding step which are successively performed, wherein ,

The first grinding step: the pressure is controlled at 280-300KG, the upper and lower grinding discs rotate at the same speed, the rotation speed is controlled at 20-22 rpm/min, and the slurry flow rate is controlled at 8-10L/min.

The second grinding step: the pressure is controlled at 200-220KG, the upper and lower grinding discs rotate at the same speed, the rotation speed is controlled at 28-30 rpm/min, and the slurry flow rate is controlled at: 6-8L/min.

The above improvement scheme firstly hones the initial sapphire sheet by means of large pressure, low rotation speed and large flow rate, which can effectively increase the thinning rate and improve the grinding efficiency. The thinner sapphire sheet is then ground using low pressure, high speed, and low flow to prevent thinner sapphire chips from breaking.

Due to the crystal orientation characteristics of sapphire, when sapphire is used for a touch panel, a two-layer composite non-planar orientation sapphire sheet, or a sapphire sheet is preferably combined with other materials. This results in different hardness and crack resistance characteristics on both sides of the sapphire panel. In this regard, the present invention makes further improvements, and proposes the following grinding method.

Method 1 · A sapphire sheet with a double-layer composite non-crystal plane orientation for a sapphire panel, wherein the upper surface is the A surface and the lower surface is the C surface, and the C surface of the composite sapphire sheet is placed face down on the upper and lower grinding discs. Between, control the upper grinding disc speed is lower than the lower grinding disc speed.

Further, the upper and lower surfaces are separated, and the upper and lower surface polishing liquids are separately supplied, and the polishing liquid supply speed between the upper surface and the upper grinding disk is controlled to be smaller than the honing liquid supply speed between the lower surface and the lower honing disk. Instruction manual

Further, the grinding process is divided into a first grinding step and a second grinding step in this order.

The first grinding step: the pressure is controlled at 280-300KG, the upper grinding disc speed is controlled at 20-22 rpm/min, the upper grinding liquid flow is controlled at: 8-9L/min, and the lower grinding disc speed is controlled at 22-24 rpm/min. The flow rate of the lower layer is controlled at 9-10L/min.

The second honing step: the pressure is controlled at 200-220KG, the upper grinding disc speed is controlled at 26-28 rpm/min, the upper grinding fluid flow is controlled at: 6-7L/min, and the lower grinding disc speed is controlled at 28-30 rpm/ Min, the lower slurry flow rate is controlled at 7-8L/min.

Method 2: The sapphire panel is a double-layer material processed by combining sapphire sheet and glass, wherein the upper layer is a sapphire layer, the lower layer is a glass layer, and the sapphire layer is placed downward between the upper and lower grinding discs, and the upper surface is controlled to be ground. The disk speed is lower than the lower grinding disk speed.

Further, the upper and lower surfaces of the sapphire sheet are separated, and the polishing liquid is supplied separately for the upper and lower surfaces, and the supply rate of the honing liquid between the upper surface and the upper grinding disc is controlled to be smaller than the supply speed of the polishing liquid between the lower surface and the lower grinding disc.

Further, the grinding process is divided into a first grinding step and a second grinding step in sequence;

The second grinding step: the pressure is controlled at 200-220KG, the upper grinding disc speed is controlled at 26-28 rpm/min, the upper grinding liquid flow is controlled at: 6-7L/min, and the lower grinding disc speed is controlled at 28-30 rpm/min. The flow rate of the lower honing fluid is controlled at 7-8L/min. Another object of the present invention is to provide a CMP process for an optical grade sapphire touch panel which not only satisfies the processing requirements of the sapphire touch panel, but also has a simple process and can effectively reduce the processing cost.

The sapphire touch panel is placed between the upper and lower polishing discs, and two kinds of SiO 2 polishing liquid are used. The polishing disc is adhered to the upper and lower polishing discs by a non-woven polishing pad, and the rotation speed of the lower disc is controlled between 20-30 rpm, and the pressure is controlled. The control is between 200-300kg and the temperature is controlled between 28-33 ° C; the polishing process is completed on a double-sided polishing machine.

The sapphire touch panel obtained by the CMP process according to the present invention has a one-time pass rate of more than 80%, a surface roughness of the panel of less than 5 nm, a flatness of less than 5 μm, and a thickness tolerance of less than ± 10 μm.

As an improvement, in order to improve the polishing efficiency and ensure the low breakage rate of the sapphire sheet, a variable speed polishing method is proposed, which comprises, according to the above polishing method, a first polishing step and a second polishing step performed successively, wherein ,

The first polishing step: the pressure is controlled at 280-300KG, the lower plate speed is controlled at 28-30 rpm/min, the polishing solution particle size is 75.0 nm, and the polishing liquid flow rate is controlled at 4-6 L/min.

The second polishing step: the pressure is controlled at 200-220KG, the upper and lower polishing discs rotate at the same speed, the rotation speed is controlled at 20-22 rpm/min, the SiO 2 particle size in the polishing liquid is 35.6 nm, and the polishing liquid flow rate is controlled at: 2-4L /min.

In the above improvement scheme, firstly, the surface rough sapphire sheet is polished by a large pressure, a large rotation speed, a large particle diameter, and a large flow rate, which can effectively increase the polishing removal rate and improve the polishing efficiency. Then, the sapphire sheet smoothed by the first step is finely polished with low pressure, low rotation speed, small particle size and small flow rate to ensure the quality of polishing. The improved method can effectively improve the polishing efficiency under the premise of protecting the polishing quality.

Due to the crystal orientation characteristics of sapphire, when sapphire is used for the touch panel, further improvement is made. The following polishing method is proposed. Method 1: A sapphire sheet oriented for crystal plane orientation, wherein the upper surface is a C surface and the lower surface is a C surface. (Or the A surface on the upper surface and the A surface on the lower surface), place the sapphire sheet face down between the upper and lower polishing discs, and control the rotation speed of the upper polishing disc to be lower than the rotation speed of the lower polishing disc.

Further, the upper and lower surfaces are spaced apart, and the polishing liquid supply speed between the upper surface and the upper polishing disk is controlled to be higher than the polishing liquid supply speed between the lower surface and the lower polishing disk.

Further, the polishing process is divided into a first polishing step and a second polishing step in this order.

The first polishing step: the pressure is controlled at 280-300KG, the upper polishing plate speed is controlled at 26-28 rpm/min, the upper polishing liquid flow is controlled at: 5-6L/min, and the lower polishing disk speed is controlled at 28-30 rpm/mm. The flow rate of the lower polishing liquid is controlled at 4-5L/min, and the particle size of the polishing liquid is 75.0 nm. The second polishing step: the pressure is controlled at 200-220KG, the rotation speed of the upper polishing plate is controlled at 20-22 rpm/min, and the flow rate of the upper polishing liquid is controlled. Controlled at: 3-4L/min, the lower polishing disc speed is controlled at 22-24 rpm/min, the lower layer polishing liquid flow rate is controlled at 2-3L/min, and the polishing liquid particle size is 35.6 nm. Method 2: The sapphire panel is a single layer material of sapphire sheet, and the sapphire single layer material is placed between the upper and lower polishing discs, and the rotation speed of the upper polishing disc is controlled to be lower than the rotation speed of the lower polishing disc.

Further, the polishing liquid supply speed between the upper surface of the sapphire sheet and the upper surface and the upper polishing disk is greater than the polishing liquid supply speed between the lower surface and the lower polishing disk. Instruction manual

Further, the polishing process is divided into a first polishing step and a second polishing step in sequence;

The first polishing step: the pressure is controlled at 280-300KG, the upper polishing plate speed is controlled at 26-28 rpm/min, the upper polishing liquid flow is controlled at: 5-6L/min, and the lower polishing plate speed is controlled at 28-30 rpm/min. The flow rate of the lower polishing liquid is controlled at 4-5 L/min, and the particle size of SiO 2 in the polishing liquid is 75.0 nm;

The second polishing step: the pressure is controlled at 200-220KG, the upper polishing disc speed is controlled at 20-22 rpm/min, the upper polishing liquid flow is controlled at: 3-4L/min, and the lower polishing disc speed is controlled at 22-24 rpm/min. The flow rate of the lower polishing liquid is controlled at 2-3 L/min, and the particle size of SiO 2 in the polishing liquid is 35.6 nm.

Further, the polishing liquid contains soybean soft phospholipid and polyurethane, and the SiO 2 particle size is 30-40 and 70-80 nm. The inventors' research results show that the polishing solution containing soy soft phospholipid and polyurethane, and the size of 30-40 and 70-80 nm SiO 2 has better sapphire polishing effect, which may be in the composition of soybean soft phospholipid and polyurethane. Contains micropores for 30-40 and (70-80 nm SiO 2 ).

In general, the beneficial effects of the present invention are: a large-sized sapphire touch panel can be prepared, the mechanical damage layer can be eliminated, and an ultra-smooth surface with a complete crystal lattice, a flatness of <5 μm, and a polished surface roughness of <5 nm can be obtained. The process shortens the processing time of the sapphire substrate and reduces the production cost. Another object of the present invention is to provide a sapphire sheet diamond wire cutting process for a mobile phone panel, which requires an adhesive to adhere the ingot to a workpiece holder that can be fixed to the slicer in a specific crystal orientation. . From a specific lattice surface, the high speed of the wire wheel is used to drive the high speed motion cutting of the diamond wire.

A sapphire sheet diamond wire slicing method, characterized in that the slicing method comprises the following steps:

The sapphire crystal block is adhered to the surface of the workpiece with the C-axis or the M-axis center line as the bottom surface, and the cut surface is the A surface;

A sapphire sheet is obtained by cutting a sapphire crystal block with a diamond wire, wherein the diamond wire has a wire diameter of 0.25 mm, a diamond particle size of 30-40 μm, a wire tension of 35 N, a linear velocity of 12 m/s, and a workpiece feed speed of 0.25 mm/ Min, the cutting fluid flow rate is 350ml/s. The inventor found in practice that when the diamond wire is cut, the ratio of the workpiece feed speed to the linear velocity is 1:2880000, and the diamond wire is not easily broken.

Further, the cutting liquid temperature is 25 ° C ± 2 ° C. Applicant's research found that the temperature of the cutting fluid and the rate of disconnection are nonlinear.

Further, the workpiece swing angle is 2-10 °, and the workpiece swing frequency is 15-40 _C ir/mm. The sapphire has a high hardness. The inventors have studied that the normal wire-cutting process is easy to deposit diamond particles and sapphire debris on the contact line between the diamond wire and the workpiece. This deposition phenomenon may be one of the main factors causing the wire breakage of the diamond wire. In order to solve this deposition phenomenon, the workpiece swing at the proper angle and frequency can reduce the debris deposition; the excessively high swing angle and frequency cut surface are easy to be lost, and it is difficult to cut out the flat cut surface; the low angle is difficult to perform dust removal.

Further, the workpiece swing angle is 5°, and the workpiece swing frequency is 28 _C ir/min. Under this condition, it is the optimal condition.

Before the diamond wire cuts the sapphire ingot, the un-bladed diamond wire cutting waste ingot is first edged. The inventors have studied that the uncut edge of the diamond wire directly cuts the sapphire ingot, which is prone to cause chipping and misalignment.

Further, wherein the diamond wire has a wire diameter of 0.25 mm and a diamond particle size of 30-40 μm, the cutting liquid contains diamond particles having a particle diameter of 20 μm and corundum particles having a particle diameter of 50 μm.

Applicant's research has shown that the addition of a mixture of diamond particles and corundum particles in the cutting fluid can increase the service life of the diamond wire, while the larger particle size of the corundum particles can block the diamond deposited on the contact line between the diamond wire and the workpiece. Particles and sapphire debris are taken away to reduce the rate of wire breakage.

Further, the content of the cutting liquid component is as follows: deionized water 100-200, particle size 20 μ ηι diamond particles 2-8, corundum particles 1-8 having a particle size of 50 μm, molecular weight 200 Polyethylene glycol 32, borate 10-40.

Further, the content of the cutting liquid component is as follows: deionized water 100, diamond particles having a particle size of 20 μππ, corundum particles 8 having a particle diameter of 50 μπι, polyethylene glycol 32 having a molecular weight of 200 , Borate 40.

Further, the content of the cutting liquid component is as follows: deionized water 100, particle size 20 μ ηι diamond particle 2, corundum particle 1 having a particle diameter of 50 μm, polyethylene glycol 32 having a molecular weight of 200 , Borate 10.

Further, the content of the cutting liquid component is as follows: deionized water 100, diamond particles having a particle size of 20 μππ, corundum particles 7 having a particle diameter of 50 μπι, and polyethylene glycol 32 having a molecular weight of 200. , borate ester 30.

The cutting liquid formula of the above scheme has been proved to reduce the wire breakage rate and improve the surface flatness of the cut surface. Another technical problem to be solved by the present invention is to provide a single-side polishing processing method for a sapphire sheet, which is particularly suitable for thick processing. Description

Polishing of sapphire sheets with a degree below 1 mm.

In order to solve the above technical problems, the present invention abandons the conventional double-sided polishing process which relies on the process of carrying the product of the parade wheel, and instead adds a single-side polishing process which is applied to the ceramic disk to increase the strength of the product.

The polishing method for the ultra-thin sapphire sheet of the invention is that the sapphire sheet cut into pieces is heated to 120 ° C through a heating table, and then the solid wax is applied to the product and evenly attached to the ceramic plate, and then the sapphire is attached. The ceramic disk of the sheet is placed on a single-sided polishing machine for polishing.

Further, the thickness of the sapphire sheet cut into pieces is 0.1-lmm

The thickness of the cut sapphire sheet can be further reduced to 0.1-0.5

The thickness of the cut sapphire sheet can be further reduced to 0.1-0.3 mm

Further, the thickness of the ceramic disk is ≡530 mm, and the flatness is ≤Ξ5 μ ιη

Further, the sapphire sheet is attached to a ceramic disk, cooled to room temperature, and then placed in a single-side polishing machine for polishing.

Further, after the sapphire sheet is attached to the ceramic disk, the weight is pressed on the entire sapphire sheet and then cooled.

Further, the polishing time was 2 hours.

Further, the component parts by weight of the solid wax are: sapphire fine powder 35-40 having a particle diameter of 20 μm, microcrystalline corundum 1-5 stearic acid 20-30 having a particle diameter of 30 μm, microcrystalline wax 8-18, lanolin 2-5, acetamide 0.5-2

Further, the component parts by weight of the solid wax are: sapphire micropowder 38 having a particle size of 20 μπι, microcrystalline corundum 4 having a particle size of 30 μπι, stearic acid 20, microcrystalline wax 18, lanolin 5 , acetamide 2

The invention adopts a single-side polishing process, and uses a ceramic disk having a large thickness and strength as a carrier, so that the sapphire piece has no deformation under high rotation speed and high pressure, so the problem of fragmentation of the sapphire piece is well avoided, and The sapphire sheet can withstand greater pressure and speed, which in turn increases production efficiency. The product can be pressurized to 0.5kg per square centimeter with a single throwing machine, and the speed can reach 60rpm, while the conventional processing is only 0.2kg per square centimeter, and the maximum speed is 35rpm. The polishing processing method of the present invention is important for processing a large panel having a thickness of 0.5 mm or less, a length of more than 120 mm, and a width of more than 55 mm. Another technical problem to be solved by the present invention is to provide a sapphire material having a good anti-fingerprint effect.

In order to solve the above technical problems, the anti-fingerprint sapphire material of the present invention comprises, in order, a sapphire layer, a 50 nm to 50 μm thick transition layer, and a 1 nm to 10000 nm thick anti-fingerprint layer.

Further, the sapphire layer is a single sapphire material layer or a sapphire composite material layer.

Further, the sapphire composite layer is obtained by combining two layers of sapphire materials of different crystal phases.

Further, the sapphire composite material layer is obtained by combining a layer A sapphire material layer and a layer C sapphire material layer, and the layer A sapphire material layer is located between the layer C sapphire material layer and the transition layer, so that the phase A sapphire layer has high hardness. Features get better played.

Further, the sapphire composite layer is obtained by laminating a layer of sapphire material with a layer of glass, and the layer of sapphire material is located between the layer of glass and the transition layer.

Further, the transition layer is an oxide layer of silicon generated in situ, an oxide layer of titanium or a mixture layer of the two, for increasing the adhesion between the sapphire material layer and the anti-fingerprint layer, wherein Silicon oxides work better.

Further, the anti-fingerprint layer is a fluorine-containing compound layer, a silicon-containing compound layer or a mixture layer of the two.

Further, the anti-fingerprint layer is a long-chain fluorine-containing compound in which a fluorine-containing compound is a siloxane, and the silicon-containing compound is a long-chain silicon-containing compound of a siloxane type, wherein a fluorine-containing compound has a large water contact angle. The silicon-containing compound has good slipperiness.

Further, the anti-fingerprint layer is obtained by vacuum evaporation or magnetron sputtering deposition on the transition layer.

Compared with the existing glass anti-fingerprint materials, the anti-fingerprint sapphire material provided by the invention has the characteristics of high hardness of sapphire, the Mohs hardness reaches 9 grades (the glass has only 7 grades), the hardness is higher, and the scratch resistance is more. Excellent, its water contact angle is greater than 100 °, that is, the anti-fingerprint effect is consistent with the glass material, far superior to the anti-fingerprint effect of ordinary sapphire material, and the hand feel is more smooth, and its transmittance is more than 75%. The anti-fingerprint layer can be firmly adhered to the sapphire material layer by the arrangement of the transition layer. The anti-fingerprint sapphire material of the invention is very suitable for the touch window of various electronic products such as mobile phones and tablet computers. Another technical problem to be solved by the present invention is to provide a new mobile phone piece which is designed to better disperse the collision force, improve the service life, and is more in line with the manual engineering. , feel better.

In order to solve the above technical problem, the sapphire mobile phone tablet of the present invention comprises a first surface and a second surface. Instruction manual

The first surface includes a first main plane, a circular arc surface of R1mm-R24mm, and an edge circular chamfer of R0.08mm-R0.12mm, the circular arc surface being located at a peripheral edge of the first main plane, the edge circle The chamfer is located on the perimeter edge of the arc surface.

Further, the width L of the circular arc surface is 0.68 mm - 3.59 mm.

Further, the surface plane of the first principal plane is tangent to the connecting side of the circular arc surface; the edge round chamfer is inscribed with the connecting side of the circular arc surface. Further, the second surface includes a second principal plane and a straight chamfer of CO.lmm, and the straight chamfer is located at a peripheral edge of the second principal plane. Further, the four corners of the sapphire mobile phone piece are rounded and chamfered by a corner of R3mm-8mm, which is used for protecting the corners, and has a reasonable size, which can not only effectively protect (the radius is too small to protect). Moreover, the overall appearance is good, and the processing is simple.

Further, the sapphire mobile phone chip is provided with a button hole and an earpiece hole matched with the mobile phone, and the button hole and the earpiece hole are provided with a hole chamfering of a hole of R0.08mm-R0.12mm at the edge on the first surface side.

In the prior art, the straight chamfering angle of the edge is changed into the edge chamfering angle, so that the collision force can be better dispersed, the probability of causing the chipping gap is significantly reduced, and the strength of the entire mobile phone sheet is increased, and the service life is further improved. long. A circular arc surface is added between the first main plane of the mobile phone sheet and the edge chamfering, so that the appearance of the mobile phone sheet is more beautiful. When the hand is hand-held, the position of the finger is just the position of the circular arc surface, which is more ergonomic. , use the feel more comfortable. And with a reasonable arc surface radius and a natural transition of the curved surface width, the visual and touch three-dimensional sense is stronger, that is, the visual effect is enhanced, the use feel is good, and the reasonable size of the circular arc surface enables the button hole and the earpiece hole to Located in a reasonable location, it is more convenient for users to operate the phone. The rounding of the buttonholes makes the buttons more comfortable and feels good. Moreover, it is not easy to cause chipping, which makes it safer to use and does not easily damage the buttons. The earpiece hole is rounded to fit the ear more comfortably. The round chamfers and the arc surface dimensions are set reasonably to make the effect more prominent. DRAWINGS

In Fig. 1, the crystal plane of the first sapphire is a-direction, and the second sheet is a structural diagram of the c-composite.

Fig. 2 is a structural diagram in which the first sapphire crystal plane is a-direction but the lateral orientation is 45 degrees from the m-axis, and the crystal plane of the second sheet is a-direction but the lateral orientation is a recombination in the r-axis direction.

3 is a combination of a 2 inch sapphire circular sheet in which the first sapphire crystal plane is c-direction but the lateral orientation is 90 degrees from the m-axis, and the second crystal plane is c-direction but the lateral orientation is the m-axis direction. A schematic diagram of the structure of a piece.

Figure 4 is a schematic view showing the structure of a sapphire sheet and a film.

Figure 5 is a schematic view of the structure of the sapphire sheet and the backsheet (ribs).

Figure 6 is a schematic view of the structure of the sapphire sheet and the film (chamfering).

Fig. 7 is a schematic view showing the steps of measuring a deviation angle of a cutting surface according to the first step of the sapphire ingot.

Figure 8 is a schematic view showing the second step of measuring the off-angle of the cutting surface of the sapphire ingot.

FIG. 9 is a schematic view showing a chamfer cutting method for measuring a deviation angle of a cutting surface according to the present invention.

Fig. 10 is a schematic view showing the deviation angle of the measuring method for detecting the deviation angle of the cutting surface according to the present invention.

11 is a schematic structural view of a sapphire touch panel of the present invention.

12 is another schematic structural view of a sapphire touch panel of the present invention.

Figure 13 is a schematic view showing the structure of a sapphire sheet.

Figure 14 is a schematic view showing the structure of the non-circular hole of the sapphire sheet of the present invention

Fig. 15 is a schematic view showing the structure of a non-circular hole for single bit translation processing according to the present invention.

Fig. 16 is a schematic view showing the structure of a non-circular hole in a horizontal dip traverse machining of a single drill bit according to the present invention.

Fig. 17 is a schematic view showing the structure of a non-circular hole in a horizontal tilting angle of a double drill bit according to the present invention.

Fig. 18 is a schematic view showing the non-circular hole structure of the horizontal dip of the double bit of the present invention.

Figure 19 is a schematic view showing the structure of the present invention.

Figure 20 is a schematic exploded view showing the sapphire layer of the present invention as a single layer of sapphire material.

Figure 21 is a schematic view showing the structure of the sapphire layer in the sapphire composite layer of the present invention.

Figure 11 is a schematic view showing the structure of a layer of different crystalline sapphire materials.

Figure 23 is a schematic view showing the structure of a sapphire material layer in combination with a glass layer. Instruction manual

detailed description

Example 1

A 5-inch rectangular sapphire sheet with a face and a face with a r-face, a single-side polished sapphire with a thickness of 0.4 mm, surface roughness Ra<0.2 nm after polishing, TTV<3 μm, LTV0.5 Micron. The polished surfaces are superimposed and placed vertically in the molybdenum crucible, and the sheets are tightly pressed without leaving gaps. It was placed in a helium gas protection furnace with a pressure of 25 Torr, heated to 1900 °C at a heating rate of 150 ° / hour, held at 1900 ° C for 10 hours, and then lowered to room temperature at a cooling rate of 150 ° / hour. The composite sapphire crystal sheet adhered by high temperature bonding is taken out, and then ground, contoured, polished, and processed into a 0.75 thick sapphire mobile phone main lens (screen cover). It has scratch-resistant, high-transmittance, high-strength mobile phone lenses.

Example 2

The first crystal face is a direction but the lateral direction is 45 degrees from the m-axis, and the second face is a-direction but the lateral orientation is the r-axis direction. The 4.5-inch inch sapphire sheet has a thickness of 0.35 mm. The sapphire is polished on one side, and the surface roughness Ra is less than 0.1 nm, TTV < 2 μm, and LTV < 0.3 μm. The polished surfaces are superimposed and placed vertically into the molybdenum crucible, and the sheets are tightly closed without leaving gaps. It was placed in a helium gas protection furnace with a pressure of 25 Torr, heated to 1800 °C at a heating rate of 150 ° / hour, held at 1800 ° C for 15 hours, and then lowered to room temperature at a cooling rate of 150 ° / hour. The composite sapphire crystal sheet adhered by high temperature bonding is taken out, and then ground, contoured, polished, and processed into a 0.65 thick sapphire mobile phone main lens (screen cover). It has scratch-resistant, high-transmittance, high-strength mobile phone lenses. Example 3

A 7-inch rectangular sapphire sheet having a first crystal plane which is a-direction but laterally oriented at an angle of 45 degrees with respect to the m-axis, and a crystal plane of the second sheet which is a-direction but laterally oriented in the r-axis direction, having a thickness of 0.4 mm The sapphire is polished on one side, polished to a surface roughness Ra < 0.1 nm, TTV < 2 microns, and LTVOJ micron. The polished surface is superimposed and placed horizontally on a sapphire flat carrier that has been ground but not polished. The layers can be stacked and the carrier placed in a molybdenum crucible. It is placed in a helium gas protection furnace. The pressure in the furnace is 25 Torr. It is heated to 1700 °C at a heating rate of 150 ° / hour, held at 1700 ° C for 15 hours, and then lowered to room temperature at a cooling rate of 150 ° / hour. The composite sapphire crystal sheet adhered by high temperature bonding is taken out, polished, contoured, polished, and processed into a 0.75 thick sapphire mobile phone tablet screen cover. It becomes a computer main screen lens with scratch resistance, high transmittance and high strength.

Example 4

A 7-inch rectangular sapphire sheet having a first crystal plane which is a-direction but laterally oriented at an angle of 45 degrees with respect to the m-axis, and a crystal plane of the second sheet which is a-direction but laterally oriented in the r-axis direction, having a thickness of 0.4 mm The sapphire is polished on one side, and the surface roughness after polishing is Ra<0.1 nm, TTV<2 μm, LTV<0.3 μm. The polished surface is superimposed and placed horizontally on a sapphire flat carrier that has been ground but not polished. The layers can be stacked and the carrier placed in a molybdenum crucible. Put it into the helium protection furnace, the pressure in the furnace is 25 Torr, heat up to 1700 °C at a heating rate of 150 ° / hour, keep it at 1700 ° C for 15 hours, and then drop to 150 ° / hour to the normal temperature. . The composite sapphire crystal sheet adhered by high temperature bonding is taken out, polished, contoured, polished, and processed into a 0.75 thick sapphire mobile phone tablet screen cover. It becomes a computer main screen lens with scratch resistance, high transmittance and high strength.

Example 5

A 2 inch sapphire circular sheet having a first crystal plane which is c-direction but transversely oriented at an angle of 90 degrees to the m-axis, and a crystal plane of the second sheet which is c-direction but laterally oriented in the m-axis direction, having a thickness of 0.7 The sapphire of mm is polished on one side, and the surface roughness after polishing is Ra<0.1 nm, TTV<2 μm, LTV<0.3 μm. The polished surface is superimposed and placed horizontally on a sapphire flat carrier that has been ground but not polished. The layers can be stacked and the carrier placed in a molybdenum crucible. It is placed in a helium gas protection furnace. The pressure in the furnace is 25 Torr. It is heated to 2000 °C at a heating rate of 150 ° / hour, held at 2000 ° C for 8 hours, and then lowered to room temperature at a cooling rate of 150 ° / hour. The composite sapphire crystal sheet adhered by high temperature bonding is taken out, polished, polished, and processed into a 1.35 thick sapphire laser window. It becomes a laser-guided military window with high transmittance and high strength.

Example 6

As shown in Fig. 4, the sapphire composite structure is composed of a watch sheet 1, a center sheet 21, and a corner sheet 22. The combined area of the center piece 21 and the corner piece 22 is equal to the surface piece 1.

Example 7

As shown in Fig. 5, unlike the embodiment 6, the center piece 21 is a prismatic piece, and the corner piece 22 is a triangular piece.

Example 8

As shown in FIG. 6, unlike the seventh embodiment, the corner piece 22 has a straight chamfer 221 . Instruction manual

Example 9

a. The blank cutting block with the surface a is used to chamfer the surface grinding with a 45-degree jig, and the chamfer is perpendicular to the c-axis.

b. Read the value on the _X -ray crystallizer.

C. Calculate the chamfer deviation a=1.18 from the reading divided by 2.

d. Read the angle on the projector b=135.046.

e. Calculate the deviation angle.

C=135+l.18-135.046=1.134 (degrees).

Example 10

a. The blank cutting block with the surface a is used to chamfer the surface grinding with a 45 degree clamp, and the chamfer is perpendicular to the m axis.

b. Read the value on the X-ray crystal orientation tester.

C. Calculate the chamfer deviation a = 0.67 from the reading divided by 2.

d. Read the angle on the projector b=135.30.

e, calculate the deviation angle

C=135+0.67-135.30=0.37 (degrees).

Example 11

Referring to Figure 11, there is shown a specific structure of the OGS touch panel of the present invention, comprising an upper sapphire cover, a middle ITO conductive layer (processed into a touch sensor) 3a, a lower insulating protective layer 4a, and the sapphire cover includes The edge non-touch area 8a and the middle touch area 9a, the sapphire cover layer includes an upper layer C sapphire layer 7a and a lower layer A sapphire layer 6a. The ITO conductive layer 3a is attached to the surface of the sapphire cover layer A sapphire layer 6a corresponding to the touch area, and the surface of the sapphire layer of the sapphire cover corresponds to the surface of the non-touch area with the ink layer 1, the ITO conductive layer 3a and The connection line 5a between the FPCs is attached under the light shielding material layer, and the insulating protective layer 4a covers the ITO conductive layer 3a and the connection line 5a from below.

The ink layer has a thickness of 8 nm to 15 nm. The ITO conductive layer has a thickness of 10 nm to 20 nm.

The sapphire cover has a thickness of 0.3 mm to 0.8 mm.

The sapphire cover edge is machined with a lead angle structure.

The touch panel production process includes the following steps.

(1) processing a sapphire substrate;

Two sapphire pieces each having a crystal plane oriented to the A side and the C side, and processed into sheets having the same shape and size;

Grinding one surface of two processed sapphire sheets to make the surface smoother and smoother;

The sapphire substrate semi-finished product is obtained by bonding the ground surface of the first sapphire sheet to the ground surface of the second sapphire sheet, wherein the surface of the C-plane face-oriented sapphire layer is used as the upper surface, and the A-face crystal orientation The surface of the sapphire layer serves as a lower surface; the upper and lower surfaces of the composite finished sapphire substrate and the side edges are ground to obtain a sapphire substrate. At this time, the crystal orientations of the upper and lower surfaces of the sapphire substrate are C-plane orientation and A-plane orientation, respectively;

In the above process, the thickness of the single-piece sapphire sheet is less than 0.4 mm, and after the compounding, grinding is performed from the upper and lower sides respectively, and the thickness protection of the finished product is between 0.4 mm and 0.6 mm;

(2) making a light shielding film on the surface of the sapphire substrate;

(3) patterning the light shielding layer film by photolithography;

Removing the light-shielding material layer attached to the touch area of the sapphire substrate by a process such as glue coating, exposure, development, etching, and film removal to form an opaque frame; Instruction manual

(4) making a transparent conductive layer;

Making a transparent conductive layer film by vacuum magnetron sputtering,

Then, the transparent conductive layer film is patterned by coating, exposing, developing, hardening, etching and stripping processes. Specific process parameters: coating vacuum: 0.0 b 0.5 Pa, temperature: 220~300 ° C, transparent conductive layer The thickness of 10nm~20nm;

Coating the photoresist, covering the etched transparent conductive layer, the thickness of the photoresist is 1600~2000nm, the uniformity is less than 5%, and the pre-baking temperature is 80-90 °C;

Exposing the photoresist, that is, etching the electrode pattern on the photoresist, the exposure conditions are: ultraviolet light wavelength: 365 nm, luminous flux: 100 120 mj, the mask of the electrode pattern of the transparent conductive layer is a chrome plate, and the distance from the substrate 100um~200um ;

Development and hardening of the photoresist, using NaOH, concentration 0.1 0.08 MOL / L, temperature: 20 ~ 35 ° C, time 50 seconds ~ 120 seconds, hardening temperature: 100-120 ° C, time 30 35 minutes;

The transparent conductive layer is etched to form a transparent conductive layer electrode pattern, and the etching material is: HCL 60%~65% ten HO240%~35%, temperature: 40-45 °C, time: 120~220 seconds;

The photoresist is removed to form a transparent conductive pattern functional electrode, using materials: NaOH, concentration 2.0~1.5 MOL/L, temperature: 30~35 ° C, time 100 seconds to 120 seconds, and finally rinsed with pure water;

(5) The FPC with the touch IC chip is electrically connected to the electrode pins by hot pressing to form a final OGS touch screen. Example 12

As shown in Fig. 13 18, four sapphire sheets were heated, and four sapphire sheets were laminated and cooled after applying the adhesive to the surface of the sapphire sheet. The thickness of the bonded sapphire block is controlled by the amount of sapphire sheet bonding. Control the thickness of the sapphire block to 10mm~15mm. The binder is a polar binder whose main component is a modified epoxy resin and an amino polyether, which can be removed as needed.

Among them, the non-circular hole is punched by firstly making vertical holes at both ends and the middle portion, and then horizontally shifting. The relationship between the splitter segment L and the drill diameter R is 2-4:1.

Using CNC numerical control three-axis linkage engraving machine, the grinding tool material is made of electroplated silicon carbide, and the mesh number is 200 mesh to 1000 mesh. During the processing, the line speed is 4m/s or more, grinding at high speed, and processing sapphire in a low feed mode.

Processing parameters: Sapphire sheet thickness: 0.5mm _; Bonding quantity: 4pcs; Rotating speed: 40000rpm/min (take 2mm diameter grinding head as an example); Feed:

0.02mm/time. The above processing parameters are related to the formation of sapphire sheets.

The sapphire sheet is punched according to the process of the embodiment, and the sapphire sheet can be effectively prevented from being broken during the processing. The high-speed low-feed of the electroplated diamond sanding head can be polished and punched on the tough sapphire surface. With the CNC's CNC machining accuracy to control the required hole requirements, the hole accuracy can reach IjO.Olmm, and the yield can reach 99%.

Another aspect of the embodiment is that the non-circular hole is punched in such a manner that the vertical hole is firstly formed at both ends and the middle portion, and then the bit is horizontally traversed from the horizontal direction by an angle of 10° to 45°. This method can reduce the overall strength requirements of the drill bit, speed up the machining process and save processing time.

The relationship between the splitter segment L and the drill diameter R is 2:1.

Another aspect of the embodiment is that the non-circular hole is punched in such a manner that the vertical hole is firstly formed at both ends and the middle portion, and then the horizontal distance between the double drill bit and the horizontal direction is relatively parallel with the horizontal angle of 10° to 45°. This method can reduce the overall strength requirements of the drill bit, speed up the machining process, and further save processing. Explain the book time.

The relationship between the splitter segment L and the drill diameter R is 4:1.

Another aspect of the embodiment is that the non-circular hole is punched by firstly forming a vertical hole at both ends and the middle portion, and then the angle between the double drill bit and the horizontal direction is 10° to 45° and 135° to 170°. shift. This method can reduce the overall strength requirements of the drill bit, speed up the machining process, and further save processing time.

The relationship between the splitter segment L and the drill diameter R is 3:1.

Example 13

Use 11-slot ultrasonic cleaning equipment, use 41 pieces of cleaning basket, use potassium hydroxide cleaning agent in the first tank, concentration 20%, use sodium sulfate cleaning agent concentration 0.02% in the second tank, 3rd, 4th, 5th, 6th Pure water is used for the 7 tanks, pure IPA for the 8th, 9th, and 10th tanks, and kerosene for the 11th tank. The ultrasonic power is set to 2.0W. Processing parameters:

1st slot: temperature 75 degrees, cleaning time 180 seconds

2nd slot: temperature 75 degrees, cleaning time 120 seconds

3rd slot: temperature 75 degrees, cleaning time 180 seconds

4th slot: room temperature, spray time 30 seconds

5th to 10th slots: room temperature, cleaning time 60 seconds

11th slot: temperature 110 degrees, drying time 30 seconds

According to the process of the embodiment, the sapphire touch panel is processed, and the surface decontamination and degreasing rate of the product is 100%.

The solution can effectively add various sizes of sapphire panels to effectively control the cleanliness of the product, and the process has high yield and low production cost.

Another embodiment of this embodiment is that the first tank is a potassium hydroxide solution having a mass fraction of 20%, and the second tank is a sodium sulfate solution having a mass fraction of 0.02%. Another embodiment of this embodiment is that the first tank is a potassium hydroxide solution having a mass fraction of 20%, and the second tank is a sodium carbonate sodium carbonate solution having a mass fraction of 0.01%.

Another embodiment of the present embodiment is a mixed cleaning agent composed of a mass fraction of 20% potassium hydroxide solution and a mass fraction of 0.02% sodium sulfate solution in a ratio of 1:2 in the first tank; the second tank is a mass fraction of 0.02%. Sodium sulfate solution.

Another embodiment of this embodiment is a sodium hydroxide solution having a mass fraction of 15% in the first tank and a potassium dihydrogen phosphate solution having a mass fraction of 0.02% in the second tank.

Another embodiment of the present embodiment is a sodium hydroxide solution having a mass fraction of 15% in the first tank, a potassium dihydrogen phosphate solution having a mass fraction of 0.02% in the second tank, and an EDTA having a mass fraction of 0.02% in the third tank. Disodium solution.

Another embodiment of this embodiment is a disodium EDTA solution having a mass fraction of 0.02% in the third tank.

Another embodiment of the present embodiment is a mixed cleaning agent composed of a mass fraction of 20% potassium hydroxide solution and a mass fraction of 0.02% sodium sulfate solution in a ratio of 1:2 in the first tank; the second tank is a mass fraction of 0.02%. Sodium sulfate solution

Another embodiment of this embodiment is that the third tank is an acetic acid solution having a mass fraction of 0.05%.

Example 14

An annealing method used in sapphire processing consists of the following steps:

Step one, placing the sapphire crystal in an annealing furnace to close the furnace cavity; vacuuming to remove air and mixed impurities in the furnace cavity, and continuously filling with high-purity nitrogen for protection, and the nitrogen flow rate is stabilized at 5 L/min;

In step two, the temperature is gradually increased from 8 hours to 1450 °C, and the heating rate is 3 ° C / min. At this heating rate, the crystal is more heated and reaches the set temperature.

Step three, keep the temperature at 1450 ° C for 8 hours;

Step 4, set the slow cooling, the cooling rate is 1.25'C/min, and the program is set to cool for 16 hours from 1450 °C to 250 to 250 °C. After the instruction manual, the program is closed, the furnace is still filled with nitrogen gas, cooled to 150 ° C, the nitrogen is turned off, and the furnace is naturally cooled.

Another embodiment of this embodiment is that the nitrogen flow rate is stabilized at 6 L/min. Applicant's research shows that when the nitrogen flow rate is 6L/min, the gas turbulence and turbulence are less, and at the same time, it can provide the best fluid temperature rise and fall environment. Spoilage and turbulence can cause dryness and unevenness on the surface of the crystal, which is detrimental to stable stress relief.

Another embodiment of this embodiment is that the nitrogen flow rate is stabilized at 10 L/min. Applicants have found that a gas flow rate of 10 L/min has a faster temperature rise and fall efficiency, but turbulence and turbulence are generated, and the turbulence and turbulence are small only when the volume of the furnace chamber is more than 300L.

Another embodiment of this embodiment is that the nitrogen flow rate is stabilized at 8 L/min.

Another embodiment of this embodiment is that the nitrogen flow rate is stabilized at 6 L/min.

Step 4, set the slow cooling, the cooling rate is 1.25 °C / _m in, the program is set to cool down for 16 hours from 1450 ° C to 250 ° C, to 250 ° C, the program is closed, the heating program is started, the heating speed ratio is 3 °C/min, the furnace is still filled with nitrogen gas. After heating to 310 °C, start the cooling program. After cooling to 150 °C, turn off the nitrogen and let the furnace cool naturally.

The Applicant has found that a temperature rising process is added during the cooling process in step four to enhance the strength of the surface of the sapphire crystal, especially the sapphire crystal containing the sharp corner portion, which is greatly improved in toughness and is not easily broken.

Another solution of this embodiment is that the solution uses a mixture of argon and nitrogen instead of a single nitrogen, and the ratio of argon to nitrogen is 1:10. Applicants have found that the incorporation of an appropriate amount of argon in nitrogen is beneficial to improve the surface flatness of the sapphire crystal after annealing and to reduce surface burrs.

Another solution of this embodiment is that the present scheme uses a mixture of helium and nitrogen instead of a single nitrogen gas, and the ratio of helium to nitrogen is 3:10. Applicants have found that the incorporation of an appropriate amount of helium in nitrogen is beneficial to improve the surface flatness of the sapphire crystal after annealing and to reduce surface burrs.

Example 15

The abrasive grain size is about 12-14u, and the boron carbide slurry concentration is 19%. Double-layer grinding and thinning processing is performed on the single-layer or double-layer sapphire touch panel. Processing parameters: Pressure: 250KG, Rotation speed: 25rpm/min, Flow rate: 8L/mm, time: 30min, the sapphire touch panel was processed according to the process of the present embodiment, the removal rate was 1.3 u/min, the surface roughness was 3.5 u, the TTV was 6 u, and the pass rate was 98%. The invention can effectively process large-size sapphire panels and control the product TTV to obtain a smaller surface roughness and a shallower damage layer depth. This process can reduce polishing time and reduce production costs.

Another embodiment of the present embodiment is: selecting an abrasive grain size of about 12-14 U, and a boron carbide slurry concentration of 19% for double-sided equal-speed grinding and thinning of a single-layer or double-layer sapphire touch panel, including the first grinding Step, processing parameters: pressure: 280KG, speed: 23rpm/mi _n , flow rate: 8L/min, time: 16min; second grinding step, processing parameters: pressure: 240KG, speed: 28rpm/min, flow rate: 8L/min, Time: 8 mm; The sapphire touch panel was processed according to the process of the present embodiment, and the average removal rate was 1.5 u/min, the surface roughness was 3.5 u, the TTV was 6 u, and the pass rate was 97.6%. Another embodiment of the present embodiment is: selecting an abrasive grain size of about 12-14u, and a boron carbide slurry concentration of 19% to perform double-sided constant-speed grinding and thinning on the double-layer composite sapphire touch panel, the sapphire panel upper surface It is the A side and the lower surface is the C side. Place the sapphire touch panel C face down, between the upper and lower grinding discs, and separate the upper and lower surfaces of the sapphire sheet. Description

The liquid is supplied separately. The specific parameters are as follows: Pressure: 280KG, Upper grinding disc rotation speed: 24rpm7min, Lower grinding disc rotation speed: 28rpm/min, Upper surface grinding fluid flow rate: 6L/min, Lower surface grinding fluid flow rate: 8L/min, Time: 26min; The process of processing the sapphire touch panel of the embodiment has an average removal rate of 1.40 u/min, a double surface roughness of 3.4 u, a TTV of 6 u, and a pass rate of 97.4%.

Another embodiment of the present embodiment is: selecting an abrasive grain size of about 12-14 U and a boron carbide slurry concentration of 19% to perform double-sided equal-speed grinding and thinning on the double-layer composite sapphire touch panel, the sapphire panel upper surface It is the A side and the lower surface is the C side. The sapphire touch panel C faces downward and is placed between the upper and lower grinding discs. The upper and lower surfaces of the sapphire sheet are separated, and the polishing liquid is supplied separately for the upper and lower surfaces.

The specific grinding step includes a first grinding step, processing parameters: pressure: 280 KG, upper grinding disc rotation speed: 23 rpm/min, lower grinding disc rotation speed: 25 rpm/min, upper surface polishing liquid flow rate: 6 L/min, lower surface polishing liquid flow rate: 8L/min, time: 16min; second grinding step, processing parameters: pressure: 240KG, upper grinding disc speed: 27rpm/min, lower grinding disc speed: 29rpm/min, upper surface grinding fluid flow: 6L/min, lower surface The flow rate of the slurry was: 8 L/min, time: 8 min; the sapphire touch panel was processed according to the process of the present embodiment, the average removal rate was 1.53 u/min, the double surface roughness was 3.5 u, the TTV was 6 u, and the pass rate was 97.9%. .

Example 16

Under the condition of pressure of 250kg and temperature of 28-33, the sapphire touch panel is polished by double-sided polishing machine and nano polishing liquid, so that the surface roughness of the sapphire touch panel is less than 5nm, no stress and no warping deformation.

The process parameters are: Si in the polishing solution: 3⁄4 particle diameter: 35.6nm, polishing disk rotation speed: 25 rpm, polishing time t=300min, polishing pressure p=250kg, polishing solution pH=9.6, polishing temperature: 28- 33 ° C, slurry flow: 4 L / min.

The sapphire touch panel obtained by the CMP process according to the present embodiment has a first pass rate of 86.5%, a panel surface roughness of 0.5 nm, a flatness of 4 μm, and a thickness tolerance of 8 μm.

Another solution of this embodiment is to select a SiO ₂ polishing solution with abrasive grains of 35.6 nm and 75.0, and perform double-side polishing on the sapphire touch panel. The pH of the polishing solution is 9.6 (0j), and the polishing temperature is 28-33. °C, specifically,

First polishing step, Processing parameters: Pressure: 280KG, Rotation speed: 2&pm/min, S\Q in polishing solution Particle size: 75.0 Flow rate: 4L/min, Time: 160min; Second polishing step, Processing parameters: Pressure: 240KG, Rotation speed: 23 rpm / min, S Oi particle size in the polishing solution: 35.6 Flow rate: 4 L / min, time: 80 min _;

According to the process of the present embodiment, the sapphire touch panel is processed, the pass rate is 88.7%, the surface roughness of the panel is 0.5 nm, the flatness is 4 μm, and the thickness tolerance is 8 μm.

Another embodiment of the present embodiment is: selecting a SiO ₂ polishing solution having an abrasive particle diameter of 75.0 nm, performing double-side polishing on the sapphire touch panel, the pH of the polishing solution is 10.1, and the polishing temperature is 28-33 ° C. The upper surface of the sapphire panel is the C surface, and the lower surface is the C surface (or the upper surface is the A surface and the lower surface is the A surface). Place the sapphire touch panel between the upper and lower polishing discs, separating the upper and lower surfaces of the sapphire sheet.

The specific parameters are as follows: Pressure: 280KG, upper polishing disk speed: 24rpm/min, lower polishing disk speed: 28rpm/min, upper surface polishing liquid flow rate: 5L/min, lower surface polishing liquid flow rate: 3L/min, time: 260min;

According to the process of the present embodiment, the sapphire touch panel is processed, and the pass rate is 85.8%, the surface roughness of the panel is 0.5 nm, the flatness is 4 μm, and the thickness tolerance is 8 μm. Another embodiment of the present embodiment is: selecting a SiO ₂ polishing solution having an abrasive particle size of 35.6 nm (75.0 _W m), performing double-side polishing on the sapphire touch panel, and ρ Η = 9.6 (70. ) of the polishing liquid, polishing Temperature: 28-33 ° C, the upper surface of the sapphire panel is the C surface, and the lower surface is the C surface (or the upper surface is the A surface, and the lower surface is the A surface:). The sapphire touch panel is placed between the upper and lower polishing discs, and the upper and lower surfaces of the sapphire sheet are separated. The specific polishing step includes a first polishing step, processing parameters: pressure: 280 KG, upper polishing disc rotation speed: 27 rpm/ _m m, lower throw Disc rotation speed: 29 rpm/min, S\Q ₂ particle size in the polishing solution: 80.0 Upper surface polishing liquid flow rate: 5 L/min, Lower surface polishing liquid flow rate: 3 L/min, Time: 160 min; Second polishing step, Processing parameters: Pressure: 240KG, upper polishing disk speed: 23rpm/min, lower polishing disk speed: 25rpm/min, SC particle size in polishing solution: 306

Upper surface polishing liquid flow rate: 5L/min, lower surface polishing liquid flow rate: 3L/min, time: 80min;

According to the process of the present embodiment, the sapphire touch panel was processed, and the pass rate was 89.1%, the surface roughness of the panel was 0.5 nm, the flatness was 4 μm, and the thickness tolerance was 8 μm.

Another embodiment of the present embodiment is: The two-step polishing operation of the present embodiment is performed in two separate upper and lower sealed spaces, and the upper surface polishing liquid and the lower surface polishing liquid are not in communication with each other.

Another embodiment of this embodiment is that the molar ratio of soybean soft phospholipid, polyurethane and SiO ₂ in the polishing liquid of the present embodiment is 1: 1: 1.5. The inventors have found that the polishing effect of the polishing liquid is optimal at this ratio.

Another aspect of this embodiment is that the molar ratio of soybean soft phosphorus to SiO ₂ in the polishing liquid of the present embodiment is 1:1.5.

Another embodiment of this embodiment is: The molar ratio of polyurethane to Si 〇 ₂ in the polishing liquid in the present embodiment is 1:1.5.

Another embodiment of the present embodiment is: the soybean soft phospholipid, polyurethane and Si in the polishing solution in the present embodiment have a molar ratio of 1:2: 1.5. Another embodiment of the present embodiment is: the surface polishing liquid of the solution It is in one-way communication with the lower surface polishing liquid, and the upper surface polishing liquid can flow to the lower surface of the sapphire, and the lower surface polishing liquid cannot flow back into the upper surface.

Example 17

The sapphire ingot is adhered to the surface of the workpiece with the C-axis and M-axis center lines as the bottom surface, and the cut surface is A-plane. Diamond wire diameter: 0.25mm, Diamond wire diameter: 30-40μηι. The un-bladed diamond wire cutting waste ingot is edged. Processing parameters: Tension: 35Ν, Linear speed: 12m/s, Workpiece feed: 0.25mm/min, Cutting fluid flow: 350ml/s, Cutting fluid temperature: 25 C Workpiece rocking angle: 5°, Workpiece rocking frequency: 28cir/ The sapphire sheet obtained by the mino according to the sapphire diamond wire cutting process of the present embodiment has a first pass rate of 97%, a flatness of ΙΟμηι, a warp of ΙΟμηι, and a thickness tolerance of 12 μm. The beneficial effects of the invention are as follows: A large-size sapphire touch panel blank product can be prepared, which shortens the processing time of the sapphire slice, improves the production quality, and reduces the production cost.

Another solution of this embodiment is: Processing parameters of the program: Tension: 35Ν, Linear velocity: 9.6m/s, workpiece feed: 0.2mm/min, Cutting fluid flow: 350ml/s, Cutting fluid temperature: 35°C , Workpiece rocking angle: 1 Workpiece rocking frequency: 15cir/min.

Another solution of this embodiment is: Processing parameters of the program: Tension: 35N, Linear velocity: 12m/s, workpiece feed: 0.25mm/min, cutting fluid flow: 350ml/s, cutting fluid temperature: 35°C, Workpiece rocking angle: 10°, workpiece rocking frequency: 40cir/min.

Another solution of this embodiment is: Processing parameters of the program: Tension: 35N, Line speed: 9.6m/s, workpiece feed: 0.2mm/min, cutting Description

Liquid flow: 350ml/s, cutting fluid temperature: 45°C, workpiece rocking angle: 5°, workpiece rocking frequency: 28cir/min.

Another embodiment of the present embodiment is: The diamond has a particle size of 50 μm in the diamond wire of the solution, and the diamond has a particle diameter of 30-40 μm in the cutting liquid. The larger diameter diamond wire is combined with the smaller particle size cutting fluid to improve the surface flatness of the sapphire ingot and to cut sapphire flakes with a thickness of less than 2 mm.

Another embodiment of the present embodiment is: the content of the cutting liquid component of the present solution is as follows: deionized water 100, diamond particles of 20 μηι, particle 2 of corundum particles having a particle size of 50 μm, and polyethylene glycol having a molecular weight of 200. Alcohol 32, borate 10.

Another embodiment of the present embodiment is as follows: The content of the cutting liquid component in the present solution is as follows: deionized water 150, diamond particles having a particle size of 20 μηι, corundum particles 5 having a particle size of 50 μm, and polycondensation having a molecular weight of 200. Glycol 32, borate 20.

Another embodiment of the present embodiment is as follows: The content of the cutting liquid component in the present solution is as follows: deionized water 200, diamond particles of 20 μηι, particle size 8 of corundum particles having a particle size of 50 μm, and polymer having a molecular weight of 200. Ethylene glycol 32, borate 40.

Another embodiment of the present embodiment is as follows: The content of the cutting liquid component in the present embodiment is as follows: deionized water 120, diamond particles having a particle size of 20 μm, corundum particles 4 having a particle diameter of 50 μm, and polycondensation having a molecular weight of 200. Glycol 32, borate 15.

Another embodiment of the present embodiment is as follows: The content of the cutting liquid component in the present solution is as follows: deionized water 180, diamond particles having a particle size of 20 μηι 7, corundum particles 7 having a particle size of 50 μm, and polycondensation having a molecular weight of 200 Ethylene glycol 32, borate 40.

Example 18

A sapphire sheet having a thickness of 0.5 mm and a length of 145 mm and a width of 66 mm is heated to 120 ° C by a general heating stage, and a solid wax having a melting point of 80 ° C is uniformly applied to the product, and a weight of 10 kg is used. Press on the entire sapphire sheet, let it evenly adhere to the ceramic plate, then move the ceramic plate to the common cooling plate (cooling temperature below 15 °C) to cool, and remove the ceramic when the temperature of the ceramic plate reaches room temperature. The disc is loaded into the single-side polishing equipment, and the pressure of the equipment is set to 0.5kg per square centimeter of the product, the rotation speed is 60rpm (that is, the rotation speed is 60rpm), the processing time is set to 2h, the equipment polishing product is turned on, and the machine is discharged after the arrival time. Take the film and process the second side with the same process to complete the polishing of the entire product.

The component parts by weight of the solid wax are: sapphire fine powder 35 having a particle diameter of 20 μm, microcrystalline corundum having a particle diameter of 30 μm, stearic acid 20, microcrystalline wax 8, lanolin 2, acetamide 0.5.

Another aspect of this embodiment is that the sapphire sheet has a thickness of 0.4 mm, a length of 130 mm, and a width of 60 mm.

The component parts by weight of the solid wax are: sapphire micro 40 having a particle size of 20 μm, microcrystalline corundum 5 having a particle size of 30 μm, stearic acid 30, microcrystalline wax 18, lanolin 5, acetamide 2.

Another aspect of this embodiment is that the sapphire sheet has a thickness of 0.1 mm, a length of 125 mm, and a width of 57 mm.

The component parts by weight of the solid wax are: sapphire fine powder 38 having a particle diameter of 20 μm, microcrystalline corundum 4 having a particle diameter of 30 μm, stearic acid 20, microcrystalline wax 18, lanolin 5, acetamide 2.

Another aspect of this embodiment is: The sapphire sheet has a thickness of 0.7 mm, a length of 150 mm, and a width of 69 mm. The component parts by weight of the solid wax described in the specification are: sapphire fine powder 38 having a particle diameter of 20 μm, aluminum oxide powder 10 having a particle diameter of 30 μm 10, stearic acid 20, microcrystalline wax 18, lanolin 5, acetamide 2 .

Another aspect of this embodiment is that the sapphire sheet has a thickness of lmm and a length of 180 nmi and 82 mm.

The component parts by weight of the solid wax are: sapphire fine powder 38 having a particle diameter of 20 μm, silica 4 having a particle diameter of 40 μm, zirconia 6 having a particle diameter of 40 μm, stearic acid 20, microcrystalline wax 18, wool Lipid 5, acetamide 2.

The sapphire sheet obtained in each of the examples can be applied to various products such as mobile phones and tablet computers according to the size.

Embodiment 19 The structure of the anti-fingerprint sapphire material according to the embodiment is as shown in FIG. 19, and the exploded structure thereof is shown in FIG. 20, which in turn is a sapphire layer lb, a transition layer 2b, and an anti-fingerprint layer 3b, wherein the sapphire layer lb is 0.5. Mm thick pure phase A sapphire material layer, transition layer 2b is in-situ generated silicon oxide, thickness 80nm _; anti-fingerprint layer 3b is siloxane-based long-chain fluorine-containing compound and thickness 15nm, resistant The fingerprint layer 3b is obtained by vacuum evaporation deposition onto the transition layer 2b.

The obtained material had a transmittance of 82%, a water contact angle of 116°, a Mohs hardness of 9, and a smooth feel.

Another embodiment of the present embodiment is: the structure is sapphire layer lb, transition layer 2b, anti-fingerprint layer 3b, wherein the sapphire layer lb is a 0.4 mm thick layer of pure C-phase sapphire material, and the transition layer 2b is generated in situ. The obtained silicon oxide has a thickness of 950 nm _{; the} anti-fingerprint layer 3b is a siloxane-type long-chain silicon-containing compound having a thickness of 60 nm, and the anti-fingerprint layer 3b is deposited by vacuum evaporation onto the transition layer 2b.

The resulting material has a transmittance of 85%, a water contact angle of 112°, and a Mohs hardness of 9, which is smooth to the touch.

Another embodiment of the present embodiment is: the structure is sapphire layer lb, transition layer 2 b, anti-fingerprint layer 3 b, sapphire layer 1 b (by sapphire material layer 11 b and sapphire material layer 12 b b thermal composite Or an adhesive composite, wherein the sapphire material layer 11b is a 0.3mm thick layer A sapphire material layer, the sapphire material layer 12b is a 0.3mm thick phase C sapphire material layer, and the phase A sapphire material layer is located at the transition layer 2 b between the layer C and the phase S sapphire material; the transition layer 1 b is an oxide of silicon formed in situ, having a thickness of 45 μm _{; the} anti-fingerprint layer 3 b is a long-chain fluorine-containing compound of a siloxane type, having a thickness of 95 nm The anti-fingerprint layer 3 b is deposited by vacuum evaporation onto the transition layer 2 b. The obtained material has a transmittance of 81%, a water contact angle of 116°, a Mohs hardness of 9, and a smooth touch.

Another embodiment of the present embodiment is as follows: FIG. 21 is a schematic view showing the structure of the sapphire layer lb, the transition layer 2b, and the anti-fingerprint layer 3b, wherein the sapphire layer lb is a sapphire material layer l ib ' and a glass layer 12b 'heat composite or adhesive composite, wherein the sapphire material layer l ib ' is 0.3mm thick C phase sapphire material layer, the glass layer 12b 'thickness is 0.3mm, the sapphire material layer l ib ' is located in the transition layer 2b and Between the glass layers 12b'. The transition layer 2b is an oxide of titanium which is formed in situ and has a thickness of 100 nm; the anti-fingerprint layer 3b is a long-chain fluorine-containing compound of siloxane type, the thickness is 80 nm, and the anti-fingerprint layer 3b is deposited by magnetron sputtering. Obtained on the transition layer 2b.

The resulting material had a transmittance of 81%, a water contact angle of 116°, and a Mohs hardness of 9, which was smooth.

Combined with the glass layer 12 ', it not only ensures the hardness, but also makes the product have good light transmittance, and more importantly, it reduces the cost.

Another aspect of the embodiment is: the structure is sapphire layer lb, transition layer 2b, anti-fingerprint layer 3b, wherein sapphire layer lb is Description

0.4mm thick pure phase C sapphire material layer, transition layer 2b is a mixture of silicon oxide and titanium oxide formed in situ, thickness is 30μπΐ; anti-fingerprint layer 3b is a mixture of fluorine-containing compound and silicon-containing compound, Specifically, it is a mixture of a long-chain fluorine-containing compound of a siloxane type and a long-chain silicon-containing compound of a siloxane type, and has a thickness of 70 nm, and the anti-fingerprint layer 3b is obtained by vacuum evaporation deposition onto the transition layer 2b.

The obtained material had a transmittance of 85%, a water contact angle of 115°, and a Mohs hardness of 9, which was smooth.

Another embodiment of the present embodiment is: the transition layer of the solution and the anti-fingerprint layer are combined into one, forming a composite layer, and the composition of the composite layer is CH3 SiC12CH2CH2COOCH2(CF2CF2)nH (η=1~6).

Comparative example:

The sapphire involved in this comparative example is a 0.5 mm thick pure A phase sapphire layer, and the surface is not subjected to anti-fingerprint treatment.

The obtained material had a transmittance of 82%, a water contact angle of 76°, and a Mohs hardness of 9, which was generally felt.

The sapphire has a plurality of crystal phases such as A, C, M, and R. In principle, each crystal phase can be used in the present invention, especially in a sapphire composite layer. However, according to the performance of different crystal phases, the phase A sapphire material has good wear resistance and the phase C sapphire material has high light transmittance. Therefore, the A and C phases are more suitable for selection than other crystal phases.

Example 20

The sapphire mobile phone piece, as shown in Figures 24-28, the mobile phone piece includes a first surface and a second surface, the first surface comprising a first major plane lc, R12mm and a width L of 2.53mm. And an edge round chamfer 3c of the RO.lmm, the arcuate surface 2c is located at a peripheral edge of the first main plane 1, the edge chamfer 3c is located at a peripheral edge of the circular arc surface 2c, the first main plane lc The arc surface 2c and the edge round chamfer 3c are integrated.

In order to make the transition of the first principal plane lc, the circular arc surface 2c and the edge circular chamfer 3c more natural, the surface plane of the first principal plane lc is tangent to the connecting side of the circular arc surface 2c; the edge circular chamfer 3c and The connecting side of the circular arc surface 2c is inscribed.

The second surface includes a second principal plane 4c and a straight chamfer 5c of CO.lmm, and the straight chamfer 5c is located at a peripheral edge of the second principal plane 4c. In order to protect the four corners of the sapphire mobile phone, the four corners are set to a corner chamfer 6c of R6mm, and the four corners are rounded to make the lines of the hand piece softer and more beautiful.

The button hole 7c and the earpiece hole 8c are provided on the sapphire mobile phone sheet, and the button hole 7c and the earpiece hole 80 are provided with a hole edge chamfering 9c of RO.1mm at the edge on the first surface side.

In the case where the thickness of the mobile phone sheet is constant, the larger the radius of the circular arc surface 2, the larger the width L is. In general, if the width L is too small, the hand feel is relatively poor. When the width L is too large, the button hole 7c is moved up, which is inconvenient for the user to operate the button of the mobile phone, and also affects the appearance.

Another embodiment of the embodiment is: the arc surface 2c is R24mm and the width L3.59mm, the edge round chamfer 3c is R0.12mm, the hole edge chamfering 9c is R0.12mm, and the corner chamfering 6c is R8mm .

Another embodiment of the embodiment is: the arc surface 2c is Rlmm, and the width is L88mm, the edge chamfer 3c is RO.OSmm, the hole edge chamfering 9c is R0.08mm, and the corner chamfering 6c is R4mm.

Claims

Claim

A sapphire thermal composite method comprising the following steps:

Step one, polishing the composite surface of the two or more layers of the sapphire sheet to be composited, the surface roughness Ra of which is less than 1 nm, the flatness TTV < 5 μm, LTV < 1.5 μm, warpage <10 Micron

Step 2: The polished sapphire sheet is subjected to crystal face thermal recombination according to different crystal plane orientations or different crystal axis orientations of the sides.

The thermal composite condition of the sapphire sheet: the sapphire sheet is composited in a high temperature furnace, the composite temperature is higher than 150 CTC and lower than the melting temperature of sapphire 205 CTC; the helium, argon or nitrogen is charged as a shielding gas; the holding time is 1- 15 hours.

2. The sapphire thermal composite method according to claim 1, wherein the sapphire sheet polishing surface is placed vertically in the molybdenum crucible of the high temperature furnace.

3. The sapphire thermal composite method according to claim 1, wherein the sapphire sheet is horizontally stacked on a gemstone support plate having a flatness and a uniform sapphire sheet, but the support plate is not polished and then supported. The plate is placed as a carrier in the molybdenum crucible of the high temperature furnace.

4. The sapphire thermal composite method according to claim 1, wherein the sapphire sheet is composed of a first sapphire sheet and a second sapphire sheet, wherein the first sapphire sheet has a crystal plane orientation of a direction, and the second sapphire sheet The crystal plane orientation is the c direction.

5. The sapphire thermal composite method according to claim 1, wherein the sapphire sheet is composed of a sapphire sheet and a sapphire film, and the sapphire film is composed of a center piece and four corner pieces, and the center piece and the corner piece are combined. The area is the same as the sapphire surface.

6. The sapphire thermal composite method according to claim 5, wherein the corner pieces of the corner piece have a straight chamfer.

7. The sapphire thermal composite method according to claim 5, wherein the center piece is a prism piece, and the corner piece is a triangular piece having a chamfered line at a corner.

8. The sapphire thermal composite method according to claim 5, wherein the surface layer of the center sheet is in the a direction, the c direction or the r direction, and the surface layer surface of the sapphire sheet and the surface layer of the center sheet surface. Differently, the edge crystal orientation of the corner piece is different from the edge crystal face of the sapphire surface.

9. The sapphire thermal composite method according to claim 5, wherein the edge of the corner piece has a crystal orientation of m.