CN102233541A - Ultraprecision machining technique of sapphire substrate for high-power light-emitting diode (LED) - Google Patents
Ultraprecision machining technique of sapphire substrate for high-power light-emitting diode (LED) Download PDFInfo
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- CN102233541A CN102233541A CN2010101728681A CN201010172868A CN102233541A CN 102233541 A CN102233541 A CN 102233541A CN 2010101728681 A CN2010101728681 A CN 2010101728681A CN 201010172868 A CN201010172868 A CN 201010172868A CN 102233541 A CN102233541 A CN 102233541A
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- sapphire substrate
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Abstract
The invention relates to the technical field of a processing method for photoelectronic devices, in particular to an ultraprecision machining technique of a sapphire substrate for a high-power light-emitting diode (LED) gallium nitride (GaN). The technique mainly comprises a sapphire plastic region grinding technique and a sapphire nano-scale chemically mechanical polishing technique. The invention also relates to special corrosive liquid and special polishing liquid applied in the process of processing the sapphire substrate. The special corrosive liquid consists of sulfuric acid, phosphoric acid and nitric acid. The special polishing liquid consists of sol type silica (SiO2), polyoxyethylene lauryl ether, olive oil, alcohol amine and deionized water. By the technique, the sapphire substrate which does not have damaged layers and has complete crystal lattices can be prepared; the surface roughness is below 0.2 nanometer; and the quality requirement of the sapphire substrate required by epitaxial growth of GaN in the process of manufacturing the high-power LED is met.
Description
Affiliated technical field
The large-power light-emitting diodes (LED) that the present invention relates to optoelectronic areas is used the sapphire substrate Ultraprecision Machining.
Background technology
Sapphire (α-Al
2O
3) crystal has been widely used in fields such as photoelectron, microelectronics, optics, laser, superconduction.In whole great power LED industry, core is the growth of GaN epitaxial wafer, because of GaN body material is difficult to preparation, must be on the Sapphire Substrate substrate epitaxial growth of gallium nitride film, the quality of Sapphire Substrate substrate directly influences GaN film growth quality on it, if the quality of Sapphire Substrate substrate is poor slightly, can makes produced lumination of light emitting diode performance inferior, even can not do light emitting diode.The quality of Sapphire Substrate substrate is realized by the sapphire Ultraprecision Machining.
Summary of the invention
In order to overcome existing sapphire process quality issue, the present invention proposes a kind of new sapphire Ultraprecision Machining, and this technology can be simplified the operation of sapphire substrate, the crudy of raising sapphire substrate.
The technical solution adopted in the present invention is: after the sapphire crystal section, adopt the sapphire substrate plastic region grinding technique of shallow damage layer to carry out the substrate grinding, with mixed acid solution sapphire substrate is carried out planarizing process, carry out chemically mechanical polishing with nm-class polishing liquid, thereby improve the quality, save process time, cut down finished cost.
Sapphire substrate Ultraprecision Machining flow process as shown in Figure 1.
The present invention is further described as follows below in conjunction with the process technology flow process of accompanying drawing 1:
1, carries out the sapphire crystal orientation by X-ray diffractometer.
2, with wire cutting machine sapphire crystal is cut into slices.
3, in the sticking dish of sapphire substrate, the composition of the bonding wax of use is: medical paraffin wax, rosin, vinyl acetate type PUR.
4, the condition of realization sapphire substrate plastic region grinding is: the linear velocity v of high rigidity ultraprecise grinding machine, ELID (online electrolytic dressing emery wheel) accurate grinding, granularity W7 bronze binding agent skive, emery wheel
s=1000m/min, amount of feeding f=1 μ m/r.With the thickness of Sapphire Substrate by 450～500 microns be thinned to about 400 microns, roughness is about 10.0 microns.
5, the technological parameter of sapphire substrate leveling is: sapphire substrate is placed on leveling destressing corrosive liquid (weight ratio of this corrosive liquid each component sulfuric acid, phosphoric acid, nitric acid is 7: 2: 1), is heated to 250 ℃ ± 5 ℃, constant temperature corrosion 15 minutes.
This method is not only eliminated machining stress, the elimination machining damage layer on top layer, and can obtain surface smoothness preferably.
6, in the sapphire substrate glossing, adopt leveling ultra-smooth not damaged precision chemical mechnical polishing technology, the composition of sapphire substrate nm-class polishing liquid: colloidal sol type SiO
2, polyoxyethylate amide, olive oil, hydramine, deionized water.
At pressure is 100Pa, and temperature is under 25 ℃ ± 2 ℃ the condition, to utilize precision polisher and nanometer burnishing liquid that Sapphire Substrate is polished, and makes the surface roughness of Sapphire Substrate reach following, unstressed, the no buckling deformation of 0.2 nanometer.
Technological parameter is:
SiO in the polishing fluid
2Mean particle dia is: 20nm
Polishing disk rotating speed: 70 rev/mins
Material containing dish revolution: 30 rev/mins
Polishing time t=120min
Polish pressure P=100Pa
The pH=10.5 of polishing fluid
Polish temperature: 25 ℃ ± 5 ℃
Polishing fluid flow: 15ml/min, polishing fluid cannot circulate
The invention effect
The invention has the beneficial effects as follows: can prepare the great power LED sapphire substrate, eliminate machining stress, the elimination machining damage layer on top layer, obtain that lattice surface is complete, the super-smooth surface of flatness＜5 micron, burnishing surface roughness (RMS)＜0.2 nanometer, this technology shortens the process time of sapphire substrate, reduces production costs.
Claims (5)
1. great power LED sapphire substrate Ultraprecision Machining is characterized in that the sapphire substrate Ultraprecision Machining is made up of plastic region grinding technique, chemical method substrate planarizing process technology, nanoscale chemical Mechanical Polishing Technique.
2. the technology of sapphire substrate plastic region accurate grinding is: on the horizontal precision grinder of high rigidity, adopt ELID (online electrolytic dressing emery wheel) precise grinding process, with the silicon carbide grinding wheel of granularity W7 bronze binding agent concentration 75%, grinding dosage is: the linear velocity v of emery wheel
s=1000m/min, amount of feeding f=1 μ m/r.
3. the technology of sapphire substrate destressing leveling is: use H
2SO
4, H
3PO
4, HNO
3Mixed liquor (their mass ratio is: H
2SO
4: H
3PO
4: HNO
3=7: 2: 1), be heated to 250 ℃, constant temperature corrosion 15 minutes.
4. sapphire substrate nm-class polishing liquid composition is: colloidal sol type SiO
2, polyoxyethylate amide, deionized water.
5. the technology of sapphire substrate polishing is: temperature: 25 ℃ ± 2 ℃, and SiO in the polishing fluid
2Mean particle dia is: 20nm, and the polishing disk rotating speed: 70 rev/mins, material containing dish revolution: 30 rev/mins, polishing time t=60min, polish pressure P=100Pa, the pH=10.5 of polishing fluid, polishing fluid flow: 15ml/min, polishing fluid cannot circulate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010101728681A CN102233541A (en) | 2010-04-24 | 2010-04-24 | Ultraprecision machining technique of sapphire substrate for high-power light-emitting diode (LED) |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010101728681A CN102233541A (en) | 2010-04-24 | 2010-04-24 | Ultraprecision machining technique of sapphire substrate for high-power light-emitting diode (LED) |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102233541A true CN102233541A (en) | 2011-11-09 |
Family
ID=44884915
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010101728681A Pending CN102233541A (en) | 2010-04-24 | 2010-04-24 | Ultraprecision machining technique of sapphire substrate for high-power light-emitting diode (LED) |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102233541A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103409807A (en) * | 2013-08-20 | 2013-11-27 | 常州市好利莱光电科技有限公司 | Preparation method of LED (Light-Emitting Diode) substrate wafer process corrosion solution |
| CN104476372A (en) * | 2014-12-05 | 2015-04-01 | 蓝思科技股份有限公司 | Sapphire cutting process employing horizontal CNC (computer numerical control) machine |
| WO2015077925A1 (en) * | 2013-11-26 | 2015-06-04 | 浙江上城科技有限公司 | Thermal compounding method for sapphire |
| CN106041706A (en) * | 2016-07-20 | 2016-10-26 | 华侨大学 | Sapphire crystal etching and polishing compound machine tool |
| CN106217235A (en) * | 2016-07-20 | 2016-12-14 | 华侨大学 | Sapphire wafer etch polishing combined machining method |
| CN110509133A (en) * | 2019-08-09 | 2019-11-29 | 浙江博蓝特半导体科技股份有限公司 | Sapphire Substrate cutting sheet process for regenerating |
-
2010
- 2010-04-24 CN CN2010101728681A patent/CN102233541A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103409807A (en) * | 2013-08-20 | 2013-11-27 | 常州市好利莱光电科技有限公司 | Preparation method of LED (Light-Emitting Diode) substrate wafer process corrosion solution |
| WO2015077925A1 (en) * | 2013-11-26 | 2015-06-04 | 浙江上城科技有限公司 | Thermal compounding method for sapphire |
| CN104476372A (en) * | 2014-12-05 | 2015-04-01 | 蓝思科技股份有限公司 | Sapphire cutting process employing horizontal CNC (computer numerical control) machine |
| CN106041706A (en) * | 2016-07-20 | 2016-10-26 | 华侨大学 | Sapphire crystal etching and polishing compound machine tool |
| CN106217235A (en) * | 2016-07-20 | 2016-12-14 | 华侨大学 | Sapphire wafer etch polishing combined machining method |
| CN110509133A (en) * | 2019-08-09 | 2019-11-29 | 浙江博蓝特半导体科技股份有限公司 | Sapphire Substrate cutting sheet process for regenerating |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20111109 |