CN103409807A - Preparation method of LED (Light-Emitting Diode) substrate wafer process corrosion solution - Google Patents
Preparation method of LED (Light-Emitting Diode) substrate wafer process corrosion solution Download PDFInfo
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- CN103409807A CN103409807A CN2013103659961A CN201310365996A CN103409807A CN 103409807 A CN103409807 A CN 103409807A CN 2013103659961 A CN2013103659961 A CN 2013103659961A CN 201310365996 A CN201310365996 A CN 201310365996A CN 103409807 A CN103409807 A CN 103409807A
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Abstract
The invention discloses a preparation method of an LED (Light-Emitting Diode) substrate wafer process corrosion solution. The special corrosion solution comprises the following components in percentage by weight: 10%-20% of sulfuric acid, 20%-30% of FQ cleaning liquid, 15%-25% of phosphoric acid, 5%-10% of hydrogen peroxide and 25%-40% of nitric acid. The preparation method comprises the following steps of: slowly pouring the sulfuric acid into a container; then respectively pouring the FQ cleaning liquid, the phosphoric acid and the nitric acid into the container in proportion, and then heating; after the specific temperature is achieved, adding the hydrogen peroxide to achieve the preparation of the corrosion solution. The process special corrosion solution disclosed by the invention can be used for enhancing the quality of a sapphire substrate wafer and greatly shortening the preparation period, thereby saving the production cost and achieving the purpose of improving the labor productivity.
Description
Technical field
The present invention relates to sapphire processing corrosive fluid preparation method technical field, especially a kind of corrosive fluid method for preparing, specifically a kind of LED substrate wafer processing corrosive fluid preparation method.
Background technology
Sapphire Sapphire, claim again white stone, is artificial single crystal's material, and molecular formula is A12O3, is hexagonal crystallographic texture.9.2～9.4), high temperature resistant, wear-resistant, anticorrosive and transmission region is wide (spectral range: high-quality optical function material 0.3～6 μ m) extreme hardness (third constellations hardness not:.Has the unique combination body that collects good optical property, physicals and chemical property.As the oxide crystal of hard (monocrystalline purity >=99.99%, hardness 9mohs), sapphire is applied to the field of various requirement harshness due to its optics and physical property.Sapphire can at high temperature keep its high strength, good hot attribute and transmitance.It has good thermal property, fabulous electrical specification and dielectric characteristics, and anti-chemical corrosion.Along with scientific and technical fast development, sapphire (A12O3) crystal has become modern industry, especially the very important base mateiral of microelectronics and photoelectronic industry.
Proposition along with energy-saving and emission-reduction and green energy resource, as the sapphire surface surface cleaning of making the luminescent device substrate, become the focus of people's research, in order to meet the demand of sapphire optics development, sapphire wafer surface cleaning technology becomes major issue anxious to be resolved.
Summary of the invention
The objective of the invention is for overcoming the deficiencies in the prior art, a kind of LED substrate wafer processing corrosive fluid preparation method is provided, the inventive method prepares corrosive fluid, can thoroughly clean up and reduce wafer surface appurtenant and metal ion etc. wafer surface metal ion, dust fall, dirt, with respect to general complete processing, shortened work flow, improved efficiency, cost is lower.
The technical solution used in the present invention is: the special-purpose corrosive fluid of the present invention is consisted of sulfuric acid, FQ scavenging solution, phosphoric acid, hydrogen peroxide, nitric acid, each component is respectively sulfuric acid 10～15% by mass percentage, FQ scavenging solution 10～20%, phosphatase 11 0～20%, hydrogen peroxide 15～25%, nitric acid 20～30%.
Preparation method of the present invention is:
(1) slowly pour sulfuric acid container in 3 times cleaning container;
(2) FQ scavenging solution, phosphoric acid, nitric acid are poured into respectively in container in proportion, be heated to 180 degree;
(3), after reaching the temperature of regulation, will add 5～10% hydrogen peroxide to get final product.
The invention has the beneficial effects as follows:
(1) the inventive method prepares corrosive fluid, can thoroughly clean up and reduce wafer surface appurtenant and metal ion etc. wafer surface metal ion, dust fall, dirt;
(2) quality product promotes: the surface impurity ion content can be controlled at :≤8 * 1012/cm
2, surperficial dust number: be greater than 0.3um
2In≤50, thereby reduced back segment client processing difficulties;
(3) good stability: all prepare at 100 grades of dust-free workshops in preparation process, thereby reduce the pollution problem produced in preparation process, make product stability better;
(4) low cost: with respect to general complete processing, shortened work flow, improved efficiency, cost is lower.
Embodiment
Example 1: first, by cleaning container 3 times, then slowly pour into 20% sulfuric acid in container; 20%FQ scavenging solution, 15% phosphoric acid, 40% nitric acid are poured into respectively in container, be heated to 180 degree; After reaching the temperature of regulation, to add 5% hydrogen peroxide can obtain corrosive fluid, and when the special-purpose corrosive fluid of above-mentioned technique is used, can improve the quality of Sapphire Substrate wafer, and greatly shorten preparation cycle, thereby save production cost, reach again the purpose of raising labour productivity.
Example 2: first, by cleaning container 3 times, then slowly pour into 15% sulfuric acid in container; 25%FQ scavenging solution, 20% phosphoric acid, 32% nitric acid are poured into respectively in container, be heated to 180 degree; After reaching the temperature of regulation, to add 8% hydrogen peroxide can obtain corrosive fluid, and when the special-purpose corrosive fluid of above-mentioned technique is used, can improve the quality of Sapphire Substrate wafer, and greatly shorten preparation cycle, thereby save production cost, reach again the purpose of raising labour productivity.
Example 3: first, by cleaning container 3 times, then slowly pour into 10% sulfuric acid in container; 30%FQ scavenging solution, 25% phosphoric acid, 25% nitric acid are poured into respectively in container, be heated to 180 degree; After reaching the temperature of regulation, to add 10% hydrogen peroxide can obtain corrosive fluid, and when the special-purpose corrosive fluid of above-mentioned technique is used, can improve the quality of Sapphire Substrate wafer, and greatly shorten preparation cycle, thereby save production cost, reach again the purpose of raising labour productivity.
Claims (2)
1. a LED substrate wafer is processed the corrosive fluid preparation method, it is characterized in that: described corrosive fluid is consisted of sulfuric acid, FQ scavenging solution, phosphoric acid, hydrogen peroxide, nitric acid, each component is respectively sulfuric acid 10～20% by mass percentage, FQ scavenging solution 20～30%, phosphatase 11 5～25%, hydrogen peroxide 5～10%, nitric acid 25～40%.
2. a kind of LED substrate wafer according to claim 1 is processed the corrosive fluid preparation method, it is characterized in that:
(1) slowly pour sulfuric acid container in 3 times cleaning container;
(2) FQ scavenging solution, phosphoric acid, nitric acid are poured into respectively in container in proportion, be heated to 180 degree;
(3) after reaching the temperature of regulation, will add 5～10% hydrogen peroxide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013103659961A CN103409807A (en) | 2013-08-20 | 2013-08-20 | Preparation method of LED (Light-Emitting Diode) substrate wafer process corrosion solution |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013103659961A CN103409807A (en) | 2013-08-20 | 2013-08-20 | Preparation method of LED (Light-Emitting Diode) substrate wafer process corrosion solution |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103409807A true CN103409807A (en) | 2013-11-27 |
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| CN2013103659961A Pending CN103409807A (en) | 2013-08-20 | 2013-08-20 | Preparation method of LED (Light-Emitting Diode) substrate wafer process corrosion solution |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112038101A (en) * | 2020-07-24 | 2020-12-04 | 东莞东阳光科研发有限公司 | Method for etching electrode foil for aluminum electrolytic capacitor and electrode foil |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102130237A (en) * | 2010-12-29 | 2011-07-20 | 映瑞光电科技(上海)有限公司 | Method for cutting sapphire substrate LED chip |
| CN102233541A (en) * | 2010-04-24 | 2011-11-09 | 周海 | Ultraprecision machining technique of sapphire substrate for high-power light-emitting diode (LED) |
| JP2012093174A (en) * | 2010-10-26 | 2012-05-17 | Yamatake Corp | Flow sensor |
-
2013
- 2013-08-20 CN CN2013103659961A patent/CN103409807A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102233541A (en) * | 2010-04-24 | 2011-11-09 | 周海 | Ultraprecision machining technique of sapphire substrate for high-power light-emitting diode (LED) |
| JP2012093174A (en) * | 2010-10-26 | 2012-05-17 | Yamatake Corp | Flow sensor |
| CN102130237A (en) * | 2010-12-29 | 2011-07-20 | 映瑞光电科技(上海)有限公司 | Method for cutting sapphire substrate LED chip |
Non-Patent Citations (1)
| Title |
|---|
| 周海，杭寅，姚绍峰: "蓝宝石晶片表面净化技术研究", 《电子机械工程》 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112038101A (en) * | 2020-07-24 | 2020-12-04 | 东莞东阳光科研发有限公司 | Method for etching electrode foil for aluminum electrolytic capacitor and electrode foil |
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Application publication date: 20131127 |