Classifications

• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
  • H10K59/80—Constructional details
  • H10K59/875—Arrangements for extracting light from the devices
  • H10K59/879—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K50/00—Organic light-emitting devices
  • H10K50/80—Constructional details
  • H10K50/85—Arrangements for extracting light from the devices
  • H10K50/858—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B82—NANOTECHNOLOGY
  • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
  • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
  • H10K2102/301—Details of OLEDs
  • H10K2102/331—Nanoparticles used in non-emissive layers, e.g. in packaging layer
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
  • H10K59/10—OLED displays
  • H10K59/12—Active-matrix OLED [AMOLED] displays
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
  • H10K59/10—OLED displays
  • H10K59/12—Active-matrix OLED [AMOLED] displays
  • H10K59/1201—Manufacture or treatment
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
  • H10K59/10—OLED displays
  • H10K59/12—Active-matrix OLED [AMOLED] displays
  • H10K59/122—Pixel-defining structures or layers, e.g. banks

Definitions

• FIG. 7 shows a method for making a nanostructured AMOLED device
• the structured optical film or a non-polarization preserving element described herein can be a separate film applied to an OLED device.
• an optical coupling layer OCL
• OLED optical coupling layer
• the optical coupling layer can be applied to the structured optical film or a non-polarization preserving element, the OLED device, or both, and it can be implemented with an adhesive to facilitate application of the structured optical film or a non-polarization preserving element to the OLED device. Examples of optical coupling layers and processes for using them to laminate light extraction films to OLED devices are described in U.S. Patent Application Serial No. 13/050,324, entitled OLED LIGHT
• the nanostructured AMOLED device 100' includes an AMOLED 100 having an OLED support 110, pixel circuitry 120 disposed on the support, and a pixel circuit planarization layer 130 initially deposited covering the entire support and pixel circuitry, as known to those of skill in the art.
• AMOLED 100 further includes at least one via 140 passing through the pixel circuit planarization layer 130 providing an electrical connection to at least one bottom electrode 150 deposited over a portion of the planarization layer.
• a pixel defining layer 160 is deposited over the pixel circuit planarization layer 130 and a portion of each bottom electrode 150 to define and electrically isolate individual pixels.
• Various polymeric film substrates comprised of various thermosetting or thermoplastic polymers are suitable for use as the support film 322.
• the support may be a single layer or multi-layer film.
• Illustrative examples of polymers that may be employed as the support layer film include (1) fluorinated polymers such as poly(chlorotrifluoroethylene),
• This cast and cure process can be done in a continuous manner using a roll of support, depositing a layer of curable material onto the support, laminating the curable material against a master and curing the curable material using actinic radiation.
• the resulting roll of support with a patterned, structured template disposed thereon can then be rolled up.
• This method is disclosed, for example, in U. S. Pat. No. 6,858,253 (Williams et al).
• the materials making up the template layer can be selected depending on the particular topography of the top structured surface that is to be imparted. In general, the materials are selected such that the structure is fully replicated before the materials solidify. This will depend in part on the temperature at which the material is held during the extrusion process and the temperature of the tool used to impart the top structured surface, as well as on the speed at which extrusion is being carried out.
• the extrudable polymer used in the top layer has a T g of less than about 140°C, or a T g of from about 85°C to about 120°C, in order to be amenable to extrusion replication and embossing under most operating conditions.
• FIG. 5 shows a method for making a nanostructured AMOLED device 500, according to one aspect of the disclosure.
• the method for making a nanostructured AMOLED device 500 begins with an AMOLED 100 having a top surface 101, as described elsewhere with reference to FIG. 1.
• the pOCL planar surface 541 of the transfer film 540 is laminated to the top surface 101 of AMOLED 100 (step 5a).
• transfer film 650 can be provided on a release liner (not shown, as described elsewhere) that is removed prior to lamination, in order to protect the pOCL planar surface 651 during handling.
• Actinic radiation 660 is applied through the transfer film 650, curing the pOCL 610 to become an OCL 612 bonded to the top surface 101 of the AMOLED 100 (step 6b).
• the nanostructured template film 620 can then be removed from the cured multicomponent transfer layer 657, exposing the nanostructured extraction surface 637 of the nanostructured transfer layer 636 bonded to the OCL 612, resulting in the nanostructured AMOLED device 600 (step 6c).
• nanostructured transfer layer 836 may be heated to high temperatures, coated from solvents, and exposed to intense irradiation, each of which is a technique that may be incompatible with an AMOLED 100, and therefore not available for use with suitable pOCL 810 materials.
• the multicomponent transfer layer 956 has a nanostructured transfer layer 926 in contact with the nanostructured template layer 924, and a pOCL 910 disposed on the nanostructured transfer layer 926, the pOCL 910 including a pOCL planar surface 951.
• transfer film 950 can be provided on a release liner (not shown, as described elsewhere) that is removed prior to lamination, in order to protect the pOCL planar surface 951 during handling.
• Actinic radiation 960 is applied to the pOCL 910 through a mask 970 having open regions 972 where the actinic radiation 960 can pass through, and blocked regions 971 which block the passage of the actinic radiation 960, resulting in a modified transfer film 950'.
• the reduced modified transfer film 950" can then be removed from the cured transferred OCL 912' and transferred nanostructured transfer layer 926', exposing the nanostructured extraction surface 913, the cured transferred OCL 912' being bonded to the AMOLED 100 in extraction region 915, resulting in the nanostructured AMOLED device 900 (step 9d).
• the areas of the untransferred nanostructured transfer layer 912" and untransferred nanostructured transfer layer 926 "that are not adhered to the top surface 101 remain attached to the reduced modified transfer film 950" as it is removed.
• nanostructured transfer layer 926 can be the same or different material as the pOCL 910 or OCL 912.
• Item 3 is the image display of item 1 or item 2, wherein the nanostructured exterior surface comprises a nanostructured transfer layer disposed on the high index optical coupling layer.
• Item 32 is the method of item 28 to item 31 , wherein the top surface of the OLED display comprises an adhesion promoting primer.
• Item 41 is a method, comprising: forming a transfer layer on a nanostructured surface of a transfer film such that the transfer layer has a planar outer surface and an embedded nanostructured surface; coating an optical coupling layer (OCL) precursor on the planar outer surface; masking selected regions of the OCL precursor to prevent polymerization; polymerizing the OCL precursor to form a patterned OCL having unpolymerized transferable OCL regions; laminating the transfer film onto a major surface of an OLED array such that the unpolymerized transferable OCL regions contact the major surface; polymerizing the unpolymerized transferable OCL regions to form a bonded patterned nanostructured OCL on the major surface of the OLED array; and removing the transfer film from the major surface of the OLED array, leaving the bonded patterned nanostructured OCL on the major surface of the OLED array.
• OCL optical coupling layer

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• Physics & Mathematics (AREA)
• Optics & Photonics (AREA)
• Microelectronics & Electronic Packaging (AREA)
• Electroluminescent Light Sources (AREA)

Priority Applications (5)

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Cited By (5)

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Citations (9)

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• 2014
  • 2014-10-20 WO PCT/US2014/061352 patent/WO2015069444A1/en not_active Ceased
  • 2014-10-20 KR KR1020167015032A patent/KR102307788B1/ko active Active
  • 2014-10-20 EP EP14860539.7A patent/EP3069384A4/en not_active Withdrawn
  • 2014-10-20 US US15/033,932 patent/US20160268553A1/en not_active Abandoned
  • 2014-10-20 CN CN201480061278.8A patent/CN105706242B/zh active Active
  • 2014-10-20 JP JP2016529911A patent/JP2016538689A/ja active Pending
  • 2014-11-06 TW TW103138595A patent/TW201523871A/zh unknown

Patent Citations (9)

Non-Patent Citations (3)

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