WO2015064399A1 - Dispositif de faisceau de particules chargées, et support d'enregistrement de programme - Google Patents

Dispositif de faisceau de particules chargées, et support d'enregistrement de programme Download PDF

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Publication number
WO2015064399A1
WO2015064399A1 PCT/JP2014/077775 JP2014077775W WO2015064399A1 WO 2015064399 A1 WO2015064399 A1 WO 2015064399A1 JP 2014077775 W JP2014077775 W JP 2014077775W WO 2015064399 A1 WO2015064399 A1 WO 2015064399A1
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WIPO (PCT)
Prior art keywords
image
charged particle
sample
pattern
particle beam
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PCT/JP2014/077775
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English (en)
Japanese (ja)
Inventor
達一 加藤
雅史 坂本
大博 平井
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株式会社日立ハイテクノロジーズ
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Publication of WO2015064399A1 publication Critical patent/WO2015064399A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/22—Optical, image processing or photographic arrangements associated with the tube
    • H01J37/222—Image processing arrangements associated with the tube
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/28—Scanning microscopes
    • H01J2237/2813—Scanning microscopes characterised by the application
    • H01J2237/2817—Pattern inspection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions

Definitions

  • This disclosure relates to a charged particle beam apparatus and can be applied to a charged particle beam apparatus having a global alignment function.
  • Scanning Electron Microscope and scanning Inspection / measurement is performed by charged particle beam devices such as a scanning ion microscope (Scanning / Ion / Microscope: SIM) and a scanning transmission microscope (Scanning / Transmission / Electron Microscope: STEM).
  • charged particle beam devices such as a scanning ion microscope (Scanning / Ion / Microscope: SIM) and a scanning transmission microscope (Scanning / Transmission / Electron Microscope: STEM).
  • SEM type charged particle beam apparatus include a scanning electron microscope for length measurement (Critical Dimension Scanning Electron Microscope: CD-SEM) and a scanning electron microscope for defect review (Defect Review Scanning Electron Microscope: DR-SEM).
  • templates image for global alignment images of several positions on the wafer with known coordinates are imaged as alignment patterns.
  • template image for global alignment images of an alignment pattern prepared in advance
  • Template images for global alignment are disclosed in Japanese Patent Application Laid-Open No. 2011-135522 (Patent Document 1), Japanese Patent Application Laid-Open No. 2012-14475 (Patent Document 2), and International Publication No. 2012/070549 (Patent Document 3).
  • it is created based on the design data of the circuit pattern formed on the wafer.
  • the design data is required to synthesize and create the template image for global alignment from the design data of the circuit pattern formed on the wafer described in Patent Document 1, but an apparatus for creating inspection information
  • a function for reading the design data into the apparatus and creating a template image, or a dedicated apparatus is required.
  • a template image for global alignment is created from design data
  • the circuit pattern formed on the sample through the semiconductor manufacturing process does not necessarily have a shape that matches the circuit pattern of the design data. The decline in pattern matching accuracy cannot be denied. It also causes a decrease in throughput.
  • Patent Document 2 and Patent Document 3 also explain that global alignment pattern matching is performed using a template image created based on design data. However, if there is no base design data, a template image for global alignment is created. It is not possible.
  • an object of the present disclosure is to provide a charged particle beam apparatus that creates a template image for global alignment without using design data.
  • the charged particle beam device includes a charged particle optical system that irradiates a sample with a charged particle beam, a sample stage that holds the sample, a control device that controls the charged particle optical system and the sample stage, and the charged particle An arithmetic device that generates an image of the sample from a signal of secondary charged particles obtained from the sample by irradiation of a line, and a storage device that stores the image of the sample.
  • the arithmetic unit sets a pattern designated on a composite image created by superimposing a plurality of images captured in advance as a template pattern, and detects a position of a pattern that matches the template pattern.
  • a template image for global alignment can be created without using design data.
  • the charged particle beam apparatus of the embodiment can be obtained by imaging when inspection in the same device or manufacturing process has already been performed in the creation of inspection information (recipe) for creating a template image for global alignment.
  • a template image is created by synthesizing the alignment pattern images based on the alignment pattern images that are present.
  • the charged particle beam device includes a charged particle optical system that irradiates a sample with a charged particle beam, a sample stage that holds the sample, a control device that controls the charged particle optical system and the sample stage, And an arithmetic unit that generates an image of the sample from a signal of secondary charged particles obtained from the sample by irradiation of the charged particle beam, and a storage device that stores the image of the sample.
  • the arithmetic unit sets a pattern designated on a composite image created by superimposing a plurality of images captured in advance as a template pattern, and detects a position of a pattern that matches the template pattern.
  • the pre-captured image is an image of a sample of the same device or manufacturing process as the sample held on the sample stage.
  • the composite image is created by superimposing images with high similarity among a plurality of images captured in advance.
  • the image having a high similarity is determined by performing pattern matching of a plurality of images captured in advance and calculating the similarity for each combination of images.
  • a plurality of the composite images are generated, and the template pattern is set on the composite image selected from the plurality of the composite images.
  • the charged particle beam apparatus includes a display device that displays an image, a display device that displays an image obtained by binarizing the composite image, an input device that designates and inputs the template pattern on the binarized image, Is provided.
  • the charged particle beam apparatus selects and cuts out a necessary range from a template image that is an image including the template pattern, and creates a template image for low magnification.
  • the charged particle beam apparatus creates a high-magnification template image based on the low-magnification template image.
  • the charged particle beam apparatus includes an optical microscope, and the image captured in advance is captured by the optical microscope.
  • the charged particle beam apparatus corrects the positional deviation of the sample based on the position of the pattern that matches the template pattern.
  • a sample and design data are required in creating a template image for global alignment for performing pattern matching with an alignment pattern formed on a sample surface such as a semiconductor wafer.
  • a sample surface such as a semiconductor wafer.
  • DR-SEM charged particle beam apparatus
  • FIG. 1 shows a schematic configuration of a charged particle beam apparatus according to an embodiment.
  • FIG. 1 shows a state in which a sample 103 is carried into the charged particle beam apparatus 100.
  • the charged particle beam device 100 includes a charged particle optical system 101 including a charged particle source 102, a sample stage 106 to which a sample 103 is fixed, a control device 141 for controlling them, input to the control device 141, display, and the like. And a defect review device 143 that performs automatic defect inspection and classification sequence.
  • Each of the control device 141 and the host device 142 is also referred to as an arithmetic device. For example, electrons or ions are used as the charged particles.
  • the apparatus control unit 131 controls the transport control unit 135, the stage control unit 134, the charged particle optical system control unit 130, and the image processing control unit 127. Control is performed to detect defects by performing global alignment automatically to correct coordinate deviation and rotational deviation between the sample 103 and the sample stage 106.
  • the device control unit 131 and the operator operation monitor 132 include a central processing unit (CPU), a storage device (memory) for storing programs and data, and the like.
  • various programs and data are stored in the auxiliary storage device 138 constituted by a hard disk or the like. Note that a program stored in a non-transitory and tangible recording medium such as a DVD is input to the auxiliary storage device 138 via the external interface 133.
  • the apparatus control unit 131 executes an inspection sequence and issues a sample transfer instruction to the transfer control unit 135, and the sample 103 is transferred to the sample stage 105 in the sample chamber 105 via the sample exchange chamber 104. Carry up and hold.
  • the apparatus control unit 131 reads recipe information such as the coordinate position of each defect candidate and charged particle optical system conditions from the external interface 133 and the auxiliary storage device 138, and the stage control unit 134 reads the coordinate position of the defect candidate from the apparatus control unit 131.
  • the coordinate of defect candidates is adjusted so that the charged particle beam is accurately scanned by controlling the sample stage 106 in consideration of the correction amount by the global alignment based on the above.
  • the charged particle optical system control unit 130 is based on charged particle optical system conditions such as acceleration voltage, retarding voltage, and imaging magnification from the apparatus control unit 131, a high voltage control unit 108, a retarding voltage control unit 109, a first condenser lens.
  • the control unit 110, the second condenser lens control unit 111, the alignment control unit 112, the deflection current control unit 113, and the objective lens control unit 114 are controlled so that an optimum charged particle beam can be scanned.
  • the extraction electrode 115 via the high voltage control unit 108, the primary charged particle beam 116 is extracted from the charged particle source 102, passes through the first condenser lens 117 and the second condenser lens 118, and is aligned by the alignment coil 119.
  • Adjustment is performed, and the primary charged particle beam 116 that has passed through the deflection coil 137 and the objective lens 120 is converged by the action of each optical lens and scanned around the coordinate position of the defect candidate on the sample 103.
  • the primary charged particle beam 116 is scanned on the sample 103, the secondary charged particle beam 121 generated on the surface of the sample 103 is captured by the secondary charged particle detector 122 and amplified by the amplifier 107 as an electric signal.
  • the image processing control unit 127 converts the electrical signal amplified by the amplifier 107 into luminance information, stores it as a captured image in the image memory 126, performs luminance correction processing by the image correction control unit 128, and then transfers it to the image display unit 129. Then, the captured secondary charged particle image is displayed.
  • the defect detection control unit 123 automatically determines whether the defect is a defect based on the captured image, and the captured image that is truly detected as a defect is The data is automatically transferred to the automatic defect classification control unit 124, and the detected defects are classified and analyzed, and the result is displayed on the display monitor 125.
  • an optical microscope 136 is disposed above the sample chamber 105 for use in capturing an optical microscope image. The image captured by the optical microscope 136 is sent to the image processing control unit 127 via the amplifier 107.
  • the charged particle beam apparatus 100 which is a DR-SEM, uses a charged particle beam to optically detect defects (for example, pattern formation abnormalities) scattered at unspecified coordinate positions on a sample 103 (for example, a semiconductor wafer) in advance. Or, based on inspection results such as position information obtained by inspection with a charged particle beam type defect inspection apparatus, defects are automatically detected, and shapes are observed and classified. In order to detect a defect, first, a defect candidate to be inspected is sampled from all defect candidates scattered at unspecified coordinate positions on the sample 103, and the accurate information on the sample 103 is obtained based on the position information of the defect candidate.
  • defects for example, pattern formation abnormalities
  • an accurate position is detected by pattern matching an alignment pattern existing at a specific part on the sample 103 with a template image for global alignment.
  • defect candidates are captured in the imaging field after the stage is moved.
  • a reference image hereinafter referred to as a low-magnification reference image
  • a defect candidate image hereinafter referred to as a low-magnification defect image
  • a difference image between the low-magnification reference image obtained by imaging and the low-magnification defect image is generated, the exact coordinate position of the difference portion on the difference image is specified, and the difference portion is truly a defect.
  • scans the charged particle beam to capture a defect image hereinafter referred to as a high-magnification defect image
  • ADR Automatic Through Defect Review
  • ADC Automatic Defect Classification
  • FIG. 2 is a diagram illustrating an inspection sequence of the charged particle beam apparatus according to the embodiment.
  • FIG. 3A is a diagram illustrating an example of an optical microscope image for global alignment of the charged particle beam apparatus according to the embodiment.
  • FIG. 3B is a diagram illustrating a positional deviation on the wafer when pattern matching fails in global alignment of the charged particle beam apparatus according to the embodiment.
  • FIG. 3C is a diagram illustrating a captured image when pattern matching fails between an optical microscope image for global alignment and a charged particle microscope image of the charged particle beam apparatus according to the embodiment.
  • the sample 103 is transported onto the sample stage 106 in step 201.
  • the recipe information such as the coordinates and imaging conditions of each point to be globally aligned in step 208 is read, and the charged particle optical system conditions such as the acceleration voltage and the probe current are set in step 209 according to the read recipe information.
  • the charged particle optical system conditions such as the acceleration voltage and the probe current are set in step 209 according to the read recipe information.
  • Correction is performed by global alignment in steps 202 and 203.
  • step 202 imaging is performed with the optical microscope 136.
  • Coarse coordinate correction is performed by taking an optical microscope image with a low magnification.
  • a pattern matching is performed using the alignment pattern included in the captured optical microscope image and the alignment pattern (template pattern) included in the optical microscope template image to calculate the amount of coordinate deviation and determine the correction value.
  • the captured optical microscope image is stored in the auxiliary storage device 138 as global alignment image information.
  • step 203 in order to capture the alignment pattern in the imaging field of view with a charged particle microscope having a high magnification, it is necessary to correct the amount of rotational deviation of the sample 103 itself, and at least 2 using an optical microscope 136 with a low magnification. It is also necessary to obtain a sample center in the stage XY coordinate system by performing global alignment above the point. After completing the global alignment at low magnification, switch to the setting to capture a high-magnification charged particle microscope image and perform highly accurate coordinate correction. A pattern matching is performed between the alignment pattern included in the captured charged particle microscope image and the alignment pattern (template pattern) included in the template image for charged particle microscope to calculate the amount of deviation of the coordinates, and the correction value is determined.
  • the alignment pattern does not enter the field of view of the captured image when imaged at high magnification. This requires additional processing such as performing a process, and it takes time to detect the alignment pattern, resulting in a decrease in throughput.
  • the display area is 135 ⁇ 135 mm
  • the real display area (Field of view: FOV) of the low-magnification optical microscope image 303 is 675 ⁇ m
  • the high-magnification charged particle microscope image 309 Assuming that the FOV is 13.5 ⁇ m, the magnification ratio of the optical microscope image / charged particle microscope image is 50 times.
  • an alignment pattern region 308 enters the imaging field.
  • the alignment pattern region 308 indicates a region of the alignment pattern for the charged particle microscope image in the optical microscope image.
  • the alignment pattern region 310 indicates a region of the alignment pattern for the charged particle microscope image in the charged particle microscope image.
  • the alignment pattern (template pattern) included in the template image approximates or is the same as the actual circuit pattern in order to perform global alignment pattern matching with high precision using an optical microscope image at a low magnification. Needless to say that is good.
  • step 204 to 207 of each defect candidate are executed.
  • the correction values of coordinate deviation and rotation deviation obtained by global alignment are used for the coordinates of each defect candidate in the recipe information.
  • the correction amount may be taken into account when the stage is moved, or the coordinates may be recalculated at once.
  • FIG. 4 is a diagram illustrating a method for creating a template image for global alignment of the charged particle beam apparatus according to the embodiment.
  • FIG. 5 is a diagram illustrating a global alignment image of the charged particle beam apparatus according to the embodiment.
  • FIG. 6A is a diagram showing a composite image created based on a global alignment image of the charged particle beam apparatus according to the embodiment, and
  • FIG. 6B is a binary image of the charged particle beam apparatus according to the embodiment.
  • FIG. FIG. 7A is a diagram illustrating a binarized image obtained by deleting unnecessary portions from the synthesized image of the charged particle beam apparatus according to the embodiment, and FIG.
  • FIG. 7B is a binary image of the charged particle beam apparatus according to the embodiment. It is a figure which shows the range which cuts out the template image for low magnification from a digitized image.
  • FIG. 8 is a diagram illustrating a high-magnification template image created from a low-magnification template image of the charged particle beam apparatus according to the embodiment.
  • the template image for global alignment is created by a conventional method.
  • the alignment pattern portion may be cut out from the image of the peripheral portion of the alignment pattern obtained by imaging.
  • the alignment pattern portion may be generated by handwriting on the operator operation monitor 132, or a pattern image may be created by using a commercially available image processing tool or the like.
  • the inspection recipe when executed, coordinate correction by global alignment is performed, so that an alignment pattern image of an actual circuit pattern imaged for pattern matching can be accumulated.
  • the template image generated by synthesizing from the alignment pattern image of the actual circuit pattern that has been accumulated even compared with the template image generated from the design data should be generated in a line segment shape that approximates the actual circuit pattern. It is possible to prevent a decrease in pattern matching accuracy.
  • step 401 the device name or manufacturing process name to be created is used as a search condition. All alignment pattern image information that matches the conditions is extracted.
  • step 402 it is determined whether the alignment pattern image information has been extracted. If the alignment pattern image information has been extracted, the process proceeds to step 403. If the alignment pattern image information has not been extracted, a template image is created by the conventional method of step 409. To do.
  • step 403 the degree of image similarity is calculated with respect to the extracted alignment pattern image.
  • the similarity is calculated by performing pattern matching using a known image processing algorithm such as SSD (Sum of Squared Difference) or SAD (Sum of Absolute Difference).
  • SSD Serial of Squared Difference
  • SAD Sud of Absolute Difference
  • a combined image is created by superimposing pattern line segment positions with high similarity between the images. Since the captured image of the actual circuit pattern is used, the alignment pattern may have rubbing or distortion. In addition, it is impossible for the captured images of a plurality of actual circuit patterns to be the same image. Therefore, an image suitable for the template image can be obtained by combining several points of the most similar captured images.
  • synthesizing images by superimposing pattern line segment positions with high similarity a composite image having line segment formation that approximates the alignment pattern in the actual circuit pattern can be created.
  • the extracted alignment pattern images are four of FIGS. 5A, 5B, 5C, and 5D
  • the alignment pattern 601 and the pattern matching as shown in FIG.
  • an image including a line pattern line segment 602 that is erroneously recognized as an alignment pattern may be obtained.
  • FIG. 6B when the composite image is binarized, a pattern line segment 602 that is erroneously recognized is easily visually identified.
  • the gap between the adjacent line segments is filled with an intermediate color, which is different from the actual one. Since it may be a line, it may be better to compose with about three images.
  • step 405 an image that seems to be optimal is selected from the several composite images created in step 404, and a template image candidate is determined. There may be a plurality of template image candidates to be selected. In that case, it is preferable to add the priority of the template image used at the time of pattern matching to the image information.
  • step 406 depending on the image processing algorithm used at the time of pattern matching, the pattern matching accuracy may be reduced due to the influence of the characteristic line segment pattern.
  • a binarized image 701 as shown in FIG. 7A is created by deleting an unnecessary line segment shape that seems to affect the image quality.
  • step 407 as shown in FIG. 7B, a necessary range 702 as a template image is selected from the binarized image 701 and cut out to create a template image 703 for an optical microscope image at a low magnification.
  • An alignment pattern 601 in FIG. 7C is a template pattern included in the template image 703.
  • an idea such as thickening the line segment pattern may be added.
  • step 408 the template image 802 for the charged particle microscope image at the high magnification is created based on the template image 703 at the low magnification.
  • a point 801 at which the line pattern line segment 601 of the alignment pattern serving as the center of the visual field at the high magnification in the template image 703 at a low magnification intersects with the imaging magnification at a right angle is enlarged.
  • a range is selected from the enlarged image and cut out to create a template image 802 for a charged particle microscope image.
  • An alignment pattern 801 in FIG. 8 is a template pattern included in the template image 802.
  • the template image for the charged particle microscope image since there is a template image for the optical microscope image that has already been created by synthesizing the alignment pattern image, it can be easily created automatically.
  • FIG. 9 is a diagram showing a template image creation screen in the charged particle beam apparatus according to the embodiment.
  • a template image for global alignment is created using a GUI (Graphical User Interface) as shown in FIG.
  • a device name input area 902 or a process that is a parameter input area of the template image creation screen 901 is used on the operator operation monitor 132 or the external interface 133 (display device and input device).
  • a name is entered in the name input area 903 and a search 904 is executed.
  • a list of alignment pattern images that match the input search conditions is displayed in the alignment pattern image list 905.
  • an execution condition of an image processing algorithm for combining images is selected from a pull-down menu of condition 906.
  • the image processing algorithm here is, for example, filters (for example, Gaussian or smoothing) performed on the image before edge detection.
  • pattern matching is executed for all the images displayed in the list, and 2 from the left of the composite image list 908 in the descending order of the matching score value in the synthesized image. Display the valuated composite image.

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

L'invention a pour objectif de créer une image gabarit d'alignement global sans utiliser de données conceptuelles. Ce dispositif de faisceau de particules chargées comprend les éléments suivants : une optique pour particules chargées qui expose un échantillon à un faisceau de particules chargées ; une platine pour échantillon qui maintient l'échantillon ; un dispositif de commande qui commande l'optique pour particules chargées et la platine pour échantillon ; un dispositif de calcul qui génère une image de l'échantillon à partir d'un signal de particules chargées secondaires obtenu à partir de l'échantillon du fait de son exposition au faisceau de particules chargées ; et un dispositif de stockage qui stocke l'image de l'échantillon. Le dispositif de calcul établit, en tant que motif de gabarit, un motif spécifié sur une image composite créée en surimposant plusieurs images capturées à l'avance. Le dispositif de calcul détecte ensuite la position d'un motif concordant avec ledit motif de gabarit.
PCT/JP2014/077775 2013-10-31 2014-10-20 Dispositif de faisceau de particules chargées, et support d'enregistrement de programme WO2015064399A1 (fr)

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JP2013-226923 2013-10-31

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0843042A (ja) * 1994-07-26 1996-02-16 Matsushita Electric Works Ltd 半導体チップの外観検査方法
JP2007334702A (ja) * 2006-06-16 2007-12-27 Hitachi High-Technologies Corp テンプレートマッチング方法、および走査電子顕微鏡
JP2011054859A (ja) * 2009-09-04 2011-03-17 Hitachi High-Technologies Corp 半導体装置用パターン検査装置および検査システム
JP2012114202A (ja) * 2010-11-24 2012-06-14 Hitachi High-Technologies Corp 画像撮像装置および画像撮像方法
JP2012122730A (ja) * 2010-12-06 2012-06-28 Hitachi High-Technologies Corp 荷電粒子線装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0843042A (ja) * 1994-07-26 1996-02-16 Matsushita Electric Works Ltd 半導体チップの外観検査方法
JP2007334702A (ja) * 2006-06-16 2007-12-27 Hitachi High-Technologies Corp テンプレートマッチング方法、および走査電子顕微鏡
JP2011054859A (ja) * 2009-09-04 2011-03-17 Hitachi High-Technologies Corp 半導体装置用パターン検査装置および検査システム
JP2012114202A (ja) * 2010-11-24 2012-06-14 Hitachi High-Technologies Corp 画像撮像装置および画像撮像方法
JP2012122730A (ja) * 2010-12-06 2012-06-28 Hitachi High-Technologies Corp 荷電粒子線装置

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