WO2015062866A1

WO2015062866A1 - Optoelectronic component and method for operating an optoelectronic component

Info

Publication number: WO2015062866A1
Application number: PCT/EP2014/072173
Authority: WO
Inventors: Thorsten VEHOFF; Karsten Diekmann; Arndt Jaeger; Benjamin Krummacher; Kilian REGAU
Original assignee: Osram Oled Gmbh
Priority date: 2013-10-29
Filing date: 2014-10-16
Publication date: 2015-05-07
Also published as: DE102013111906A1; DE112014004950A5

Abstract

The invention relates to different embodiments of an optoelectronic component (100), said component comprising a first electrode (110), a second electrode (114), and an organic functional layer structure (112), said organic functional layer structure (112) being arranged between the first electrode (110) and the second electrode (114) and being designed to convert an electric current into electromagnetic radiation and to emit same, and at least said first electrode (110) comprises at least one first electrode region (110A) and one second electrode region (110B). The component also comprises a control device (302) designed to: provide (402) at least one first electric current (412) to the first electrode region (110A) and/or to provide (402) at least one second electric current to the second electrode region (110B), said first electric current (412) and/or said second electric current (414) having current pulses (434, 438); and change (404) the first electric current (412) and/or the second electric current (414) in such a way that the total emission (416) of electromagnetic radiation is temporally variable.

Description

description

Optoelectronic component and method for operating an optoelectronic component

In various embodiments, a

Optoelectronic device and a method for operating an optoelectronic device provided.

Organic-based optoelectronic components,

For example, organic light emitting diodes (organic light

emitting diode (OLED), are becoming increasingly common

Application in general lighting, for example as a surface light source.

An organic optoelectronic component, for example an OLED, may comprise an anode and a cathode

organic functional layer system in between

exhibit. The organic functional layer system may include one or more emitter layers in which electromagnetic radiation is generated, one or more charge carrier pair generation layer structures of each two or more carrier pair generation layers

("Charge generating layer", CGL)

Charge carrier pair generation, and one or more

Electron block layer (s), also referred to as

Hole transport layer (HTL), and one or more hole block layer (s), also referred to as electron transport layer (ETL), to direct the flow of current.

In a conventional method for selectively generating images or inhomogeneities with organic light-emitting diodes, the first electrode is contacted by holes which pass through the entire OLED. This can be applied to each contacted point of the second electrode, a different voltage. In another conventional method for targeted

Generating images or inhomogeneities electrical busbars are used, which are applied at an uneven distance from each other.

In another conventional method for targeted

Creating images or inhomogeneities becomes one

organic light emitting diode designed as an OLED display.

These are able to map any distributions. However, OLED displays are darker and more expensive than simple OLEDs.

In various embodiments, a

Optoelectronic component and a method for operating an optoelectronic component provided, with which it is possible to represent time variable different homogeneous or deliberately inhomogeneous luminance distributions that would not be reproduced without this method, for example.

In various embodiments, a

Optoelectronic device provided, the

Optoelectronic component comprising: a first

Electrode, a second electrode, an organic

functional layer structure, and wherein the organic functional layer structure is formed between the first electrode and the second electrode, and wherein the organic functional layer structure is configured to convert an electric current into electromagnetic radiation and emit; and wherein at least the first electrode has at least a first electrode region and a second electrode region; and a

Control device that is set up for a

Providing at least one first electrical current into the first electrode region and / or providing at least one second electrical current into the second electrode region, the first electrical current and / or the second electrical current having current pulses; and to changing the first electric current and / or the second electric current such that the total emission of the electromagnetic radiation is temporally variable. A first electric current and a second electric current may be used in various embodiments

different currents are understood at the electrode areas of the electrode, for example as two or more

different electrical currents at the two or more contacts or electrode areas of an electrode. These streams can be arbitrary, for example by means of

Pulse width modulation can be modulated. In different

Embodiments, the electrode may more than two

Have electrode regions or contact for energizing and are energized with more than two electrical currents, for example, three, four, five, six or more

Have electrode regions and / or be energized with three, four, five, six or more electrical currents. In one embodiment, the first electrode can be or be formed such that the first

Electrode region is at least partially electrically insulated from the second electrode region, for example by means of a dielectric layer or an air bridge.

In one embodiment, the first electrode can be or be formed such that the first

Electrode region is electrically connected by an electrical resistance with the second electrode region.

In one embodiment, the electrical resistance may be the sheet resistance of the first electrode.

In one embodiment, the first electrode may be formed as an anode and the second electrode as a cathode or be. In one embodiment, the first electrode may be formed as a cathode and the second electrode as an anode or be. In one embodiment, the first electrode may be a

have transparent electrically conductive oxide or be formed therefrom, for example, an electron-conducting or hole-conducting transparent or translucent oxide. In one embodiment, the first electrode can comprise or be formed from a metal, for example an electron-conducting or hole-conducting transparent or translucent metal oxide or an opaque metal. In one embodiment, the first electrode may be formed on or above the organic functional layer structure.

In one embodiment, the organic functional

Layer structure on or above the first electrode

be educated.

In one embodiment, the first electrode may be formed in the organic functional layer structure, for example as an intermediate electrode.

In one embodiment, the first electrode may have through contacts through the organic functional layer structure or be electrically connected to vias,

For example, in an optoelectronic component, which is designed as a so-called bottom emitter, in which the first electrode is transparent, the organic

functional layer structure is formed on the first electrode and the first electrode by means of

Through contacts through the organic functional

Layer structure is contacted electrically. In one embodiment, at least one via can be formed in approximately the planar center of the planar organic functional layer structure. Thereby, a control of the center of the luminous area can be made possible, for example by an electrode contact with the one or more vias in the middle of the luminous area

electrically connected. The structure, the one

provides electrical current to the via, should have a smaller sheet resistance than that

Electrode portion which is electrically connected to the contact.

In one embodiment, the control device may comprise an electrical memory by means of which a plan for controlling the first electric current and the second electric current is stored.

In one embodiment, the control device a

Input terminal by means of which have a plan for

Controlling the first electric current and the second electric current is input.

In one embodiment, the control device may be configured such that the first electric current and / or the second electric current have a direct current and / or an alternating current.

In one embodiment, the control device may be configured such that the first electrical current and the second electrical current differ in at least one of the following properties: the pulse amplitude; the pulse rate; the pulse width; the duty cycle; of the

Pulse shape; and / or the number of pulses per sample interval. In one embodiment, the control device may be configured such that changing the first electric current and / or the second electric current a

Pulse modulation has, for example, a Pulse width modulation, a pulse frequency modulation and / or a pulse amplitude modulation.

In an embodiment, the control device may be configured such that the first electric current and / or the second electric current is / are changed such that the color locus of the emitted electromagnetic

Radiation locally from the optoelectronic component

is temporally changeable.

In one embodiment, the control device may be configured such that the first electric current and / or the second electric current is / are changed in such a way that the brightness of the emitted electromagnetic energy is changed

Radiation locally from the optoelectronic component

is temporally changeable. The locally emitted

Electromagnetic radiation can affect the position on the luminous area, i. the optically active surface, the optoelectronic component, of which the

electromagnetic radiation is emitted.

In an embodiment, the control device may be configured such that the first electric current and / or the second electric current is / are changed in such a way that the color saturation of the emitted electromagnetic radiation is local to the optoelectronic component

is temporally changeable.

In various embodiments, a method of operating an optoelectronic as described above

Component provided, the method comprising:

Providing at least a first electrical current into the first electrode region and / or providing

at least one second electrical current into the second electrode region, the first electric current and / or the second electric current having current pulses; and changing the first electric current and / or the second electric current such that the total emission of the electromagnetic radiation is temporally variable.

In various embodiments of the method, the first electrical current and / or the second electrical current may / may be a direct current and / or an alternating current

exhibit .

In various embodiments of the method, the first electrical current and the second electrical current may be in at least one of the following characteristics

distinguish: the pulse amplitude; the pulse rate; the pulse width; the duty cycle; the pulse shape; and / or the number of pulses per sample interval.

In various embodiments of the method, changing the first electric current and / or the second electric current may have a pulse modulation,

For example, a pulse width modulation, a

Pulse frequency modulation and / or a

Pulse amplitude modulation.

In various embodiments of the method, the first electric current and / or the second electric current can be changed in such a way that the color locus of the emitted electromagnetic radiation is locally from the

optoelectronic component is temporally variable.

In various embodiments of the method, the first electrical current and / or the second electrical current can be changed in such a way that the brightness of the emitted electromagnetic radiation is determined locally by the

optoelectronic component is temporally variable. In various embodiments of the method, the first electric current and / or the second electric current can be changed such that the color saturation of the emitted electromagnetic radiation is locally variable in time by the optoelectronic component.

Embodiments of the invention are illustrated in the figures and are explained in more detail below.

Show it

Figures 1A-D are schematic representations optoelectronic

Components according to various

Embodiments;

Figures 2 is a schematic representation of a

optoelectronic component according to

various embodiments;

Figures 3A, B are schematic representations of optoelectronic

Components according to various

Embodiments; and

FIGS. 4A-C schematically show a method for operating an optoelectronic component according to various exemplary embodiments.

In the following detailed description, reference is made to the accompanying drawings, which form a part hereof, and in which is specifically shown by way of illustration

Embodiments are shown in which the invention can be practiced. In this regard will

Directional terminology such as "top", "bottom", "front", "back", "front", "rear", etc. used with reference to the orientation of the described figure (s). There

Components of embodiments in number

different orientations can be positioned, the directional terminology is illustrative and is in no way limiting. It is understood that other embodiments may be utilized and structural or logical changes may be made without departing from To deviate scope of the present invention. It should be understood that the features of the various exemplary embodiments described herein may be combined with each other unless specifically stated otherwise. The following detailed description is therefore not to be construed in a limiting sense, and the

Scope of the present invention is defined by the appended claims. In the context of this description, the terms

"connected", "connected" and "coupled" used to describe both a direct and indirect connection, a direct or indirect connection and a direct or indirect coupling. In the figures, identical or similar elements are provided with identical reference numerals, as appropriate.

In various embodiments, optoelectronic components are described, wherein an optoelectronic

Component having an optically active region. The optically active region can emit electromagnetic radiation by means of an applied voltage to the optically active region. In various embodiments, the electromagnetic radiation may have a wavelength range of X-radiation, UV radiation (A-C),

visible light and / or infrared radiation (A-C).

A planar optoelectronic component, which has two flat, optically active sides, can be used in the

Connection direction of the optically active pages, for example, be transparent or translucent, for example, as a transparent or translucent organic

Led. A planar optoelectronic component can also be referred to as a planar optoelectronic component.

However, the optically active region can also have a planar, optically active side and a flat, optically inactive Side, for example, an organic light emitting diode, which is set up as a so-called top emitter or bottom emitter. The optically inactive side may be in

various embodiments transparent or

be translucent, or be provided with a mirror structure and / or an opaque substance or mixture of substances,

for example, for heat distribution. The beam path of the optoelectronic component can be directed, for example, on one side.

In the context of this description, emitting electromagnetic radiation can emit

electromagnetic radiation. In other words, providing electromagnetic radiation may be understood as emitting electromagnetic radiation by means of an applied voltage to an optically active region.

An electromagnetic radiation emitting structure

(optically active structure) can in different

Embodiments an electromagnetic radiation

be emitting semiconductor structure and / or as an electromagnetic radiation emitting diode, as an organic electromagnetic radiation emitting diode, as an electromagnetic radiation emitting transistor or as an organic electromagnetic radiation

be formed emitting transistor. The

electromagnetic radiation emitting device can, for example, as a light emitting diode (light emitting diode, LED), as an organic light emitting diode (organic light emitting diode, OLED), as light emitting

Transistor or emitting as organic light

Transistor, for example an organic one

Field effect transistor (organic field effect transistor OFET) and / or organic electronics may be formed. The organic field-effect transistor may be a so-called "all-OFET" in which all layers are organic Component may be part of an integrated circuit in various embodiments. Furthermore, a plurality of electromagnetic radiation emitting components may be provided, for example housed in a common housing. An optoelectronic component may have an organic functional layer system, which is synonymous as organic functional

Layer structure is called. The organic

The functional layer structure may include or may be formed from an organic substance or mixture of organic substances, for example, configured to provide electromagnetic radiation from a provided electrical current. An organic light emitting diode 200 may be formed as a top emitter or a bottom emitter. In a bottom emitter, light is emitted from the electrically active region through the

Carrier emitted. In a top emitter, light is emitted from the top of the electrically active region and not by the carrier.

A top emitter and / or bottom emitter may also be optically transparent or optically translucent, for example, any of those described below

Layers or structures may be transparent or translucent.

The optically active time of an optoelectronic component is the time in which an optically active structure

emitted electromagnetic radiation.

The optically inactive time of an optoelectronic

Component is the time in which an optically active

Structure does not emit electromagnetic radiation.

The duty cycle (MUX) gives the ratio of the optically inactive time to the optically active time in one

Activation interval. For example, one is optical active structure at a duty cycle of 2 (MUX = 2) per activation interval to 50% of the time of

Control interval optically inactive (unpowered) and emits electromagnetic radiation in 50% of the time of the control interval.

With a pulsed control of the optoelectronic

Component can the optically active time, for example by means of a mathematical convolution of the pulse widths and

Pulse rate can be determined in a drive interval.

The maximum pulse amplitude or pulse height can be understood as the location of a pulse of electromagnetic radiation at which the pulse has the highest luminance.

In various embodiments, a

Optoelectronic device 100 provided - illustrated in Fig.lA to ID. The optoelectronic component 100 may include a first electrode 110, a second electrode 114, and an organic functional one

Layer structure 112 on or above a carrier 102

exhibit . The organic functional layer structure 112 may be formed between the first electrode 110 and the second electrode 114. The organic functional

Layer structure 112 may be formed, a

convert electrical energy into electromagnetic radiation and emit it. Embodiments of the organic functional layer structure 112, the

Electrodes 110, 114 and the carrier 102 are in the

Described below. At least the first electrode 100 may include at least a first electrode region 110A and a second electrode region 110A

Have electrode area HOB. The first electrode 110 may have a structure 132 that includes the first electrode region 110A of the second

Electrode area HOB electrically and / or physically

separates each other. The structure 132 may be, for example, an electrical resistor and / or a dielectric. In other words, the first electrode 110 may be so

be educated or be that first

Electrode region 110A is electrically insulated from the second electrode region HOB, for example by means of a dielectric structure 132, an air gap 132 and / or a glass structure 132, for example by forming a gap in the first electrode 110. The first electrode 110 may be formed such that the first electrode region 110A is electrically connected to the second electrode region HOB through an electrical resistance 132

connected is. The electrical resistance may, for example, be or have the sheet resistance of the first electrode HO. The first electrode HO may be at least the first

Have electrode portion HOA and the second electrode portion HOB, which are connected to each other physically, and electrically conductive or electrically conductive. For example, the first electrode HO is an electrically conductive

Layer formed so that the first electrode area HOA and the second electrode area HOB different

Area of the electrically conductive layer. In other words, the first electrode HO having the first electrode region HOA and the second electrode region HOB may be formed in one piece, i. be one piece. Along a flat (main) side of the electrically conductive layer, the first electrode HO may have a sheet resistance.

Thereby, for example, an electric current along this (main) side of a first side surface of

(Main) side to a second side surface of the

(Main) side, with the second side surface of the first

Opposite side surface; at the second side surface around the part which drops over the sheet resistance decreases. For example, the first electrode portion 110A has the first side surface and the second electrode portion HOB has the second side surface. Thus, the first

Electrode portion 110A and the second electrode portion HOB by means of sheet resistance of the electrically conductive layer of the first electrode 110 is electrically conductive

interconnected, the structure 132 the

Has sheet resistance or is. In various developments, the first electrode 110 has at least one first connection and one connection, which are set up for electrical connection of the component to a component-external electrical energy source. For example, the at least first terminal and second terminal are electrically conductively connected to the electrode; and contactable,

for example, exposed. The at least first terminal and second terminal may be electrically isolated from each other such that the first terminal and the second terminal

Connection is free from a common physical

Contact. In other words, the first terminal and the second terminal may be connected by means of the first electrode

be electrically conductively connected to one another such that a first electrical potential and to the second terminal a second electrical potential can be provided to the first terminal, wherein the first electrical potential may be different from the second electrical potential. By means of the electrical sheet resistance and the independently energizable terminals of the first electrode, the first electrode can be an electrical

Have potential distribution.

Alternatively or additionally is in different

Further developments according to the described first electrode formed.

The first electrode 110 may be in the form of an anode and the second

Electrode 114 may be formed as a cathode or. The however, the first electrode 110 may be formed as a cathode and the second electrode 114 may be formed as an anode. The first electrode 110 may comprise or be formed from a transparent electrically conductive oxide and / or a metal.

The first electrode 110 may be formed on or over the organic functional layer structure 112

(illustrated in FIG. 1A-C) and / or the organic

functional layer structure 112 may be formed on or over the first electrode 110 (illustrated in FIG

Fig.lD), for example, the first electrode 110 as an intermediate electrode (interlayer structure - see

Description below) in the organic functional

Layer structure be formed. The first electrode 110 may be through contacts through the organic functional

Layer structure 112 have or be electrically connected to such. At least one through contact may in one embodiment be formed in approximately a planar center of the planar organic functional layer structure 112.

The first electrode 110 may be electrically separated from the second electrode 114 by means of an electrical insulation 130. The electrical insulation may include, for example, a polyimide or be formed therefrom.

The optoelectronic component 100 can by means of a contact region 134A, B, for example in the form of a

Contact pad, a contact strip and / or an electrical

Busbar (Busbar) with a control device to be electrically connected. The first electrode region 110A may have, for example, a first contact region 134A and the second electrode region HOB a second

Contact area 134B be electrically connected.

The at least two contact areas 134A, 134B may

for example next to each other and / or on opposite sides Be arranged sides in edge regions of the first electrode 110 (illustrated in Fig.lB, C). The first electrode 110 and the organic functional layer structure 112 may be formed such that the entire luminous area can be supplied with each contact area 134A, 134B alone.

The first electrode 110, the second electrode 114 and / or further electrodes, for example an intermediate electrode, may each have two or more electrode regions 110A, B and / or contact regions 134A, 134B, for example two to five independently energisable ones

Electrode areas 110A, B. Independent from each other

energizable electrode areas each have individual, electrically isolated contact terminals with a

Control device (see also description of Figure 3, below).

The two or more terminals of an electrode 110, 114 may be energized with different currents, which may vary over time. The different streams can

For example, have different voltages, currents, current densities and / or pulse modulations. As a result, an adjustable luminance distribution can be formed. This adjustable luminance distribution and other luminance distributions, with other applied

Voltages can be correlated by means of pulse modulation, for example pulse width modulation (PWM), pulse amplitude modulation (PAM) and / or pulse frequency modulation (PFM); be superimposed optically. As a result, an almost arbitrary luminance distribution can be generated. A luminance distribution can be characterized by means of the color location, the polarization, the brightness, the color saturation and / or the luminance gradient of an emitted electromagnetic radiation.

The electrode 110, 114 with a plurality of electrode regions 110A, HOB energized with different currents can thus provide an electrical voltage between the electrode regions 110A, HOB, ie within the electrode 110, 114. The electrical potential at an electrode region 110A, HOB of the first electrode 110 can be understood as the electrical potential that is formed with respect to the second electrode 114.

The second electrode 114 may be at a fixed electrical potential. More precisely: the connections of the second

Electrode 114 may be at a fixed electrical potential. Due to the sheet resistance of the second

Electrode 114 may be used in the second electrode

Power distribution to be formed. The same applies to the first electrode 110. The potential at the electrode regions 110A, HOB can be different in time and from one another, for example, in that the temporal variation of the

electrical voltages are different. It may be possible for the same voltage to be applied to the electrode regions 110A, HOB at a certain point in time, wherein the further voltage is applied

Change in the voltage applied to each other is different.

The respective time-varying electrical voltage of the electrode areas HOA, HOB can be determined spatially and spatially, taking into account the surface resistance 132 of the first electrode HOA and the associated voltage drop in the first electrode HO as a function of a distance from the external electrical contacts in the contact areas 134A, B cause temporally varying current density distribution of the current. This current density distribution can be impressed into the organic functional layer structure, i. be converted into a luminance distribution.

The different voltages on the at least two

Electrode areas HOA, B can be different

Luminance in different surface and edge areas of the luminous surface cause. The different luminances may vary from each other over time. This can be a temporally and spatially varying Luminance distribution over the luminous surface of the optoelectronic component 100 are caused.

The temporal variation of the different electrical voltages can be during operation of the optoelectronic

Component to a perceptible for an observer temporal and spatial variation of the

Luminance distribution one of the optoelectronic

Component 100 emitted electromagnetic radiation.

The variation can be varied with the choice of the electrical currents in the electrode areas 110A, B so that they are perceptible to the observer in their strength and frequency. As a result of the optoelectronic component 100, a variable electromagnetic radiation, ie electromagnetic radiation with a temporally and spatially varying luminance distribution, are emitted. This can be more pleasant in lighting applications than a temporally and spatially homogeneous and constant luminance distribution.

For example, in an observer by means of

temporal change of the total emission of the optoelectronic component of the impression of a wave or cloud movements or the flickering of candles or flames are caused. For example, temporal changes with a frequency of less than or equal to 10 Hz or less than or equal to 5 Hz and greater or

equal to 0.5 Hz.

An optoelectronic component 100 in the form of a

organic light emitting diode may have a non-linear luminance-voltage characteristic. Furthermore, that can

Optoelectronic component having a complex geometric shape, for example, have a geometrically complex shaped optically active surface. This can be some

Luminance distributions, the different Voltage values correspond, in constant operation of

organic light-emitting diodes by means of a linear combination of voltages can not be displayed. However, these can be represented by means of an optical overlay of different images via pulse modulation. Thereby can

Luminance distributions (PWM images) can be displayed, which can not be displayed even with many different voltages. The resulting images can also be displayed in a temporal sequence. For this purpose, different superimpositions and stress distributions can be performed by a control device 302 (illustrated in FIG. 3).

successively represented by the optoelectronic component 100, for example in analogy to the

Dividing Fourier series, the members of the

Overlay not linearly independent as in Fourier series.

The first electrode 110, the second electrode 114 and the organic functional layer structure 112 may each have a large area. This can do that

Optoelectronic component 100 is a coherent

Have luminous surface, which is not structured in functional subregions, for example, a segmented into functional areas luminous area or a luminous area, which is formed by a plurality of pixels (pixels).

This allows a large-area radiation of

electromagnetic radiation from the optoelectronic device are made possible. "Large area" can mean that the optically active side of an area,

for example, a contiguous area, for example greater than or equal to a few square millimeters,

For example, greater than or equal to one square centimeter, for example, greater than or equal to one square decimeter. For example, the optoelectronic

Device 100 have only a single continuous luminous surface, which is caused by the large-area and contiguous formation of the electrodes 110, 114 and the organic functional layer structure 112. In one embodiment, the optoelectronic component can have a large luminous area. A large luminous area may be, for example, a square area with an edge length of more than 10 cm or more than 20 cm or more than 25 cm or more than 50 cm. Furthermore, the large luminous surface and a different shape, such as a

rectangular or round shape, with a corresponding

Have surface area.

The voltage drop in the electrode areas increases in

Depending on the distance to the contact areas 134A, 134B and is approximately proportional to the distance of

Contact terminals at the electrode areas 134A, B Thus, the voltage drop increases in proportion to the size of the

Light area. By increasing the luminous area, an enhancement of luminance inhomogeneity on the

Luminous surface can be achieved. The organic functional layer structure 112 may be formed to have a high voltage sensitivity. A high voltage sensitivity can be found in

Dependency of the organic material used

For example, be achieved in that the organic functional layer structure two or more

Emitter layers, between which no

Interlayer structure (see description of Figure 2, below) is formed. The at least two emitter layers can be formed, for example, to emit electromagnetic radiation with the same color locus, that is, for example, both red, yellow, green or blue light. However, the emitter layers can also electromagnetic radiation with

emit different properties, for example, radiate different colored light, such as red and yellow light or red and green light. For example, two emitter layers may be directly adjacent to each other and adjacent to each other. A

Interlayer can reduce the voltage sensitivity. Between one of the electrodes 110, 114 and the

Emitter layers can be formed at least two energy barrier structures. The energy barrier structures can be designed as an energy barrier for charge carriers in the direction of the emitter layers, for example with an energy level of approximately 0.1 eV. Charge carriers can overcome the energy barrier on their way from the electrode 110, 114 to the emitter layers. An organic functional layer structure with an energy barrier structure for charge carriers in the direction of the emitter layer

can cause the organic functional

Layer structure a dependence of the color place of the

having emitted electromagnetic radiation from the applied operating voltage. The color locus may be dependent on the number of photons generated in each of the at least two emitter layers. Charge carriers from one of the electrodes 110, 114 overcome in the direction of

Emitter layers an energy barrier. The number of

Charge carriers that overcome the energy barrier may be dependent on the operating voltage across the electrodes 110, 114. These charge carriers may be in the

Energy barrier structure closer emitter layer with oppositely charged charge carriers recombine.

As a result, in a further emitter layer from the energy barrier structure, fewer charge carriers can be applied to the emitter layer

Recombination are available.

When you increase the operating voltage, you can do more

Starting from the energy barrier structure, charge carriers pass through the nearest emitter layer to an emitter layer arranged behind it. As a result, the emitter layer arranged behind it can be relative to the closer

emitter layer produce more photons. In the case of an organic functional layer structure 112 with emitter layers which emit electromagnetic radiation having a different color locus, it is possible by means of the

Variation of the current through the organic functional

Layer structure according to the operating current density, the relative intensity of the emitted electromagnetic radiation from the emitter layers can be varied.

The variation may be, for example, by means of an above

described voltage drop in the first electrode 110 and / or by a temporal variation of the electrical current provided in the electrodes 110, 114 can be achieved. The organic functional layer structure 112 can thus be designed in such a way that a variation of the current in the first electrode region 110A and / or in the second electrode region HOB can be achieved by changing the currents

Color gradient is achieved over the illuminated area.

A suitable choice of the surface resistivities of the first electrode 110 and the second electrode 114, the voltage sensitivity of the organic functional layer stack 112 and the size of the luminous surface or the optoelectronic component may influence the intensity of the luminance inhomogeneity. Optoelectronic device 100 may include a hermetically sealed substrate 228, an active region 206, and an encapsulation structure 226 (illustrated in FIG

Fig.2). The hermetically sealed substrate may include the carrier 102 and a first barrier layer 204.

The active region 206 is an electrically active region 206 and / or an optically active region 206. The active region 206 is, for example, the region of the optoelectronic component 100 in which electric current flows and / or in the operation of the optoelectronic component 100 electromagnetic radiation is generated and / or absorbed.

The electrically active region 206 may include the first electrode 110, the organic functional layer structure 112, and the second electrode 114.

The organic functional layer structure 206 may include one, two or more functional layered structure units and one, two or more interlayer structures between the layered structure units. The organic

Functional layer structure 112 may include, for example, a first organic functional layer structure unit 216, an interlayer structure 218, and a second organic functional layer structure unit 220.

The encapsulation structure 228 may be a second

Barrier layer 208, a coherent connection layer 222 and a cover 224 have.

The carrier 102 may be glass, quartz, and / or a

Have semiconductor material or be formed from it.

Further, the carrier 102 may be a plastic film or a laminate having one or more plastic films

have or be formed from it. The plastic may include or be formed from one or more polyolefins (eg, high or low density polyethylene or PE) or polypropylene (PP). Furthermore, the plastic

Polyvinyl chloride (PVC), polystyrene (PS), polyester and / or polycarbonate (PC), polyethylene terephthalate (PET),

Polyethersulfone (PES) and / or polyethylene naphthalate (PEN) or be formed therefrom.

The carrier 102 may comprise or be formed of a metal, for example copper, silver, gold, platinum, iron, for example a metal compound, for example steel. The carrier 102 may be opaque, translucent or even transparent.

The carrier 102 may be part of or form part of a mirror structure.

The carrier 102 may have a mechanically rigid region and / or a mechanically flexible region or be formed in such a way, for example as a foil.

The carrier 102 may be formed as a waveguide for electromagnetic radiation, for example, be transparent or translucent with respect to the emitted or

absorbed electromagnetic radiation of the

optoelectronic component 100.

The first barrier layer 204 may include or be formed from one of the following materials:

Alumina, zinc oxide, zirconia, titania,

Hafnium oxide, tantalum oxide, lanthanum oxide, silicon oxide,

Silicon nitride, silicon oxynitride, indium tin oxide,

Indium zinc oxide, aluminum-doped zinc oxide, poly (p-phenylene terephthalamide), nylon 66, and mixtures and

Alloys thereof.

The first barrier layer 204 may be formed by means of one of the

following methods are formed: a

Atomic layer deposition (Atomic Layer Deposition (ALD)), such as a plasma enhanced

Plasma Enhanced Atomic Layer Deposition (PEALD) or a plasmaless

Atomic deposition method (Plasma-less Atomic Layer

Deposition (PLALD)); a chemical

Gas phase deposition process (Chemical Vapor Deposition

(CVD)), for example a plasma-assisted

Plasma Enhanced Chemical Vapor Deposition (PECVD) or a plasmalose

Gas Phase Separation Process (Plasma-less Chemical Vapor Deposition (PLCVD)); or alternatively by means of others

suitable deposition method.

In a first barrier layer 204, the more

Sublayers, all sublayers can be formed by means of a Atomschichtabscheideverfahrens. A layer sequence that has only ALD layers can also be referred to as "nanolaminate." In the case of a first barrier layer 204, which has a plurality of

Partial layers may have one or more

Partial layers of the first barrier layer 204 by means of a different deposition method than one

Atomic layer deposition processes are deposited,

for example by means of a gas phase separation process.

The first barrier layer 204 may have a layer thickness of about 0.1 nm (one atomic layer) to about 1000 nm

For example, a layer thickness of about 10 nm to about 100 nm according to an embodiment,

for example, about 40 nm according to an embodiment.

The first barrier layer 204 may be one or more

having high refractive index materials, for example one or more high refractive index materials, for example having a refractive index of at least 2.

It should also be noted that in various

Embodiments also entirely on a first

Barrier layer 204 may be omitted, for example, in the event that the carrier 102 hermetically sealed

is formed, for example, comprises glass, metal, metal oxide or is formed therefrom. The first electrode 204 may be formed as an anode or as a cathode. The first electrode 110 may include or be formed from one of the following electrically conductive material: a metal; a conductive conductive oxide (TCO); a network of metallic

Nanowires and particles, for example of Ag, which are combined, for example, with conductive polymers; a network of carbon nanotubes that

for example, combined with conductive polymers; Graphene particles and layers; a network

semiconducting nanowires; an electrically conductive

Polymer; a transition metal oxide; and / or their

Composites. The first electrode 110 made of a metal or a metal may comprise or be formed from one of the following materials: Ag, Pt, Au, Mg, Al, Ba, In, Ca, Sm or Li, as well as compounds, combinations or

Alloys of these materials. The first electrode 110 may be one of the following as a transparent conductive oxide

Have materials: for example, metal oxides:

For example, zinc oxide, tin oxide, cadmium oxide, titanium oxide, indium oxide, or indium tin oxide (ITO). In addition to binary

Metal oxygen compounds, such as ZnO, SnO 2, or Ιη 2θ 3, also include ternary metal oxygen compounds, for example, AlZnO, Zn 2 SnO 4, CdSnO 3, ZnSnO 3, Mgln 204,

Galn03, Ζη2ΐη2θ5 or In4Sn30] _2 or mixtures

different transparent conductive oxides to the group of TCOs and can in different

Embodiments are used. Farther

The TCOs do not necessarily correspond to a stoichiometric composition and can furthermore be p-doped or n-doped, or hole-conducting (p-TCO) or electron-conducting (n-TCO).

The first electrode 110 may be a layer or a

Layer stacks of several layers of the same material or different materials. The first electrode 110 may be formed by a stack of layers of a combination of a layer of a metal on a layer a TCO, or vice versa. An example is one

Silver layer deposited on an indium tin oxide (ITO) layer (Ag on ITO) or ITO-Ag-ITO multilayers. The first electrode 204 may, for example, have a layer thickness in a range of 10 nm to 500 nm,

for example, from less than 25 nm to 250 nm, for example from 50 nm to 100 nm. The first electrode 110 may be a first electrical

Have connection to which a first electrical potential can be applied. The first electrical potential may be provided by a power source, such as a power source or a voltage source. Alternatively, the first electrical potential can be applied to an electrically conductive carrier 102 and the first electrode 110 can be indirectly electrically supplied by the carrier 102. The first electrical potential may be, for example, the ground potential or another predetermined reference potential.

FIG. 2 shows an optoelectronic component 100 having a first organic functional layer structure unit 216 and a second organic functional one

Layer structure unit 220 is shown. In various embodiments, the organic functional

Layer structure 112 but also more than two organic functional layer structures, for example, 3, 4, 5, 6, 7, 8, 9, 10, or even more, for example 15 or more, for example, 70th

The first organic functional layered structure unit 216 and optionally further organic functional

Layer structures may be the same or different, for example the same or different

have different emitter material. The second organic functional layered structure unit 220, or the other organic functional layered structure units may be one of those described below Embodiments of the first organic functional

Layer structure unit 216 may be formed.

The first organic functional layer structure unit 216 may include a hole injection layer, a

Hole transport layer, an emitter layer, a

Electron transport layer and a

Elektroneninj have ektionsschicht. In an organic functional layer structure unit 112, one or more of said layers may be provided, wherein the same layers may have physical contact, may only be electrically connected to each other or even electrically insulated from each other, for example, may be formed side by side. Individual layers of said layers may be optional.

A hole injection layer may be formed on or above the first electrode 110. The hole injection layer may include one or more of the following materials exhibit or can be formed therefrom: HAT-CN, Cu (I) pFBz, MoO _x, WO _x, VO _x, ReO _x, F4-TCNQ, NDP-2, NDP-9, Bi (III) pFBz, F16CuPc; NPB (Ν, Ν'-bis (naphthalen-1-yl) -N, '-bis (phenyl) -benzidine); beta-NPB N, '-Bis (naphthalen-2-yl) -N,' -bis (phenyl) -benzidine); TPD

(N, '- bis (3-methylphenyl) - N,' - bis (phenyl) benzidine); Spiro TPD (N, '- bis (3-methylphenyl) - N,' - bis (phenyl) benzidine); Spiro-NPB (N, 'bis (naphthalen-1-yl) -N,' -bis (phenyl) -spiro); DMFL-TPD Ν, Ν'-bis (3-methylphenyl) -Ν, Ν'-bis (phenyl) -9,9-dimethyl-fluorene); DMFL-NPB (N, N'-bis (naphthalen-1-yl) -N, N'-bis (phenyl) -9,9-dimethyl-fluorene); DPFL-TPD (N, N'-bis (3-methylphenyl) -N, '-bis (phenyl) -9, 9-diphenyl-fluorene); DPFL-NPB (Ν, Ν'-bis (naphthalen-1-yl) -Ν, Ν'-bis (phenyl) -9,9-diphenyl-fluorene); Spiro-TAD (2, 2 ', 7, 7' tetrakis (n, n-diphenylamino) -9,9'-spirobifluorene); 9,9-bis [4- (N, N-bis-biphenyl-4-yl-amino) -phenyl] -9H-fluorene; 9,9-bis [4- (N, N-bis-naphthalen-2-yl-amino) -phenyl] -9H-fluorene; 9,9-bis [4- (N, N'-bis-naphthalene-2-) yl-N, '-bis-phenyl-amino) -phenyl] -9H-fluoro;

N, '-bis (phenanthrene-9-yl) -N,' -bis (phenyl) -benzidine;

2, 7-bis [N, N-bis (9,9-spiro-bifluoren-2-yl) -amino] -9,9-spirobifluorene; 2,2'-bis [N, N-bis (biphenyl-4-yl) amino] 9,9-spirobifluorene; 2,2'-bis (N, -di-phenyl-amino) 9,9-spiro-bifluorene; Di- [4- (N, -ditolyl-amino) -phenyl] cyclohexane;

2, 2 ', 7, 7' -tetra (N, N-di-tolyl) amino-spiro-bifluorene; and / or N, N, ',' -tetra-naphthalen-2-yl-benzidine. The hole injection layer may have a layer thickness in a range of about 10 nm to about 1000 nm, for example in a range of about 30 nm to about 300 nm, for example in a range of about 50 nm to about 200 nm.

On or above the hole injection layer, a

Hole transport layer may be formed. The

Hole transport layer may comprise or be formed from one or more of the following materials: NPB (Ν, Ν'-bis (naphthalen-1-yl) -N, '-bis (phenyl) -benzidine); beta-NPB N, N'-bis (naphthalen-2-yl) -N, '-bis (phenyl) -benzidine); TPD (N, '- bis (3-methylphenyl) - N,' - bis (phenyl) benzidine); Spiro TPD (N, '- bis (3-methylphenyl) - N,' - bis (phenyl) benzidine); Spiro-NPB (N, 'bis (naphthalen-1-yl) -N,' -bis (phenyl) -spiro); DMFL-TPD N, 'bis (3-methylphenyl) -N,' -bis (phenyl) -9, 9-dimethyl-fluorene); DMFL-NPB (N, N'-bis (naphthalen-1-yl) -N, N'-bis (phenyl) -9,9-dimethyl-fluorene); DPFL-TPD (N, N'-bis (3-methylphenyl) -N, '-bis (phenyl) -9, 9-diphenyl-fluorene); DPFL-NPB (Ν, Ν'-bis (naphthalen-1-yl) -Ν, Ν'-bis (phenyl) -9,9-diphenyl-fluorene); Spiro-TAD (2, 2 ', 7, 7' tetrakis (n, n-diphenylamino) -9,9'-spirobifluorene); 9,9-bis [4- (N, N-bis-biphenyl-4-yl-amino) -phenyl] -9H-fluorene; 9,9-bis [4- (N, N-bis-naphthalen-2-yl-amino) -phenyl] -9H-fluorene; 9,9-bis [4- (N, N'-bis-naphthalen-2-yl-N, '-bis-phenyl-amino) -phenyl] -9H-fluoro;

N, '-bis (phenanthrene-9-yl) -N,' -bis (phenyl) -benzidine; 2,7-bis [N, N-bis (9,9-spiro-bifluoren-2-yl) -amino] -9,9-spirobifluorene; 2,2'-bis [N, N-bis (biphenyl-4-yl) amino] 9,9-spirobifluorene; 2,2'-bis (N, -di-phenyl-amino) 9,9-spiro-bifluorene; Di- [4- (N, -ditolyl-amino) -phenyl] cyclohexane; 2, 2 ', 7, 7' - tetra (N, N-di-tolyl) amino-spiro-bifluorene; and N,

N, ',' -tetra-naphthalen-2-yl-benzidine, a tertiary amine, a carbazole derivative, a conductive polyaniline and / or

Polyethylenedioxythiophene.

The hole transport layer may have a layer thickness in a range of about 5 nm to about 50 nm,

for example in a range of about 10 nm to about 30 nm, for example about 20 nm.

On or above the hole transport layer, a

Emitter layer be formed. Each of the organic

functional layer structure units 216, 220 may each have one or more emitter layers,

for example with fluorescent and / or

phosphorescent emitters.

An emitter layer may include or be formed from organic polymers, organic oligomers, organic monomers, organic small, non-polymeric molecules ("small molecules"), or a combination of these materials.

The optoelectronic component 100 can in a

Emitter layer comprise or be formed from one or more of the following materials: organic or

organometallic compounds, such as derivatives of polyfluorene, polythiophene and polyphenylene (for example 2- or 2,5-substituted poly-p-phenylenevinylene) and metal complexes, for example iridium complexes such as blue-phosphorescent FIrPic (bis (3,5-difluoro-2- (bis 2-pyridyl) phenyl- (2-carboxypyridyl) -iridium III), green phosphorescent

Ir (ppy) 3 (tris (2-phenylpyridine) iridium III), red

Phosphorus Ru (dtb-bpy) 3 * 2 (PFg) (tris [4, 4'-di-tert-butyl- (2, 2 ') -bipyridine] ruthenium (III) complex) and blue-fluorescent DPAVBi (4, 4 Bis [4- (di-p-tolylamino) styryl] biphenyl), green fluorescent TTPA (9, 10-bis [N, -di- (p-tolyl) -amino] anthracene) and red

fluorescent DCM2 (4-dicyanomethylene) -2-methyl-6-yl-ulolidyl-9-enyl-4H-pyran) as a non-polymeric emitter. Such non-polymeric emitters can be deposited by means of thermal evaporation, for example. Furthermore, can

Polymer emitter are used, which can be deposited, for example by means of a wet chemical process, such as a spin-on process (also referred to as spin coating).

The emitter materials may be suitably embedded in a matrix material, for example one

technical ceramic or a polymer, for example an epoxide; or a silicone.

In various embodiments, the

Emitter layer have a layer thickness in a range of about 5 nm to about 50 nm, for example in a range of about 10 nm to about 30 nm, for example about 20 nm.

The emitter layer may have single-color or different-colored (for example blue and yellow or blue, green and red) emitting emitter materials. Alternatively, the

Emitter layer have multiple sub-layers that emit light of different colors. By mixing the different colors, the emission of light can result in a white color impression. Alternatively, it can also be provided to arrange a converter material in the beam path of the primary emission generated by these layers, which at least partially absorbs the primary radiation and emits secondary radiation of a different wavelength, so that from a (not yet white) primary radiation by the combination of primary radiation and secondary Radiation produces a white color impression. The organic functional layer structure unit 216 may include one or more emitter layers configured as a hole transport layer. Furthermore, the organic functional layer structure unit 216 may include one or more emitter layers configured as an electron transport layer.

On or above the emitter layer, a

Be formed electron transport layer, for example, be deposited.

The electron transport layer may include or be formed from one or more of the following materials: NET-18; 2, 2 ', 2 "- (1,3,5-benzene triyl) tris (1-phenyl-1H-benzimidazoles); 2- (4-biphenylyl) -5- (4-tert-butylphenyl) -1,3 , 4-oxadiazoles, 2, 9-dimethyl-4,7-diphenyl-l, 10-phenanthroline (BCP), 8-hydroxyquinolinolato-lithium, 4- (naphthalen-1-yl) -3, 5-diphenyl-4H- l, 2, 4-triazoles; 1, 3-bis [2- (2,2'-bipyridine-6-yl) -1,3,4-oxadiazo-5-yl] benzene; 4,7-diphenyl-1 , 10-phenanthrolines (BPhen); 3- (4-biphenylyl) -4-phenyl-5-tert-butylphenyl-1,2,4-triazoles; bis (2-methyl-8-quinolinolates) -4- (phenylphenolato) aluminum; 6,6'-bis [5- (biphenyl-4-yl) -1,3,4-oxadiazol-2-yl] -2,2'-bipyridyl; 2-phenyl-9,10-di (naphthalene 2-yl) -anthracenes; 2, 7-bis [2- (2,2'-bipyridine-6-yl) -1, 3, 4-oxadiazo-5-yl] -9,9-dimethylfluorene; 1, 3-bis [2- (4-tert-butylphenyl) -1,3,4-oxadiazo-5-yl] benzene; 2- (naphthalen-2-yl) -4,7-diphenyl-l, 10-phenanthroline; 2,9-bis (naphthalen-2-yl) -4,7-diphenyl-l, 10-phenanthrolines;

Tris (2,4,6-trimethyl-3- (pyridin-3-yl) phenyl) boranes; 1-methyl-2 - (4 - (naphthalen-2-yl) phenyl) -1H-imidazo [4,5- f] [1,10] phenanthroline; Phenyl-dipyrenylphosphine oxides;

Naphthalenetetracarboxylic dianhydride or its imides;

Perylenetetracarboxylic dianhydride or its imides; and fabrics based on siloles with a

Silacyclopentadiene unit. The electron transport layer may have a layer thickness

in a range of about 5 nm to about 50 nm, for example, in a range of about 10 nm to about 30 nm, for example about 20 nm.

On or above the electron transport layer may be a

Electron injection layer may be formed. The

Electron injection layer may include or may be formed of one or more of the following materials: NDN-26, MgAg, CS2CO3, CS3PO4, Na, Ca, K, Mg, Cs, Li, LiF;

2, 2 ', 2 "- (1,3,5-benzene triyl) tris (1-phenyl-1H-benzimidazoles); 2- (4-biphenylyl) -5- (4-tert-butylphenyl) -1,3 , 4-oxadiazoles, 2, 9-dimethyl-4,7-diphenyl-l, 10-phenanthrolines (BCP), 8-hydroxyquinolinolato-lithium, 4- (naphthalen-1-yl) -3, 5-diphenyl-4H- l, 2, 4-triazoles; 1, 3-bis [2- (2,2'-bipyridine-6-yl) -1,3,4-oxadiazo-5-yl] benzene; 4,7-diphenyl-1 , 10-phenanthrolines (BPhen); 3- (4-biphenylyl) -4-phenyl-5-tert-butylphenyl-1,2,4-triazoles; bis (2-methyl-8-quinolinolates) -4- (phenylphenolato) aluminum; 6,6'-bis [5- (biphenyl-4-yl) -1,3,4-oxadiazo-2-yl] -2,2'-bipyridyl; 2-phenyl-9,10-di (naphthalene 2-yl) -anthracenes; 2, 7-bis [2- (2,2'-bipyridine-6-yl) -1, 3, 4-oxadiazo-5-yl] -9,9-dimethylfluorene; 1, 3-bis [2- (4-tert-butylphenyl) -1,3,4-oxadiazol-5-yl] benzene; 2- (naphthalen-2-yl) -4,7-diphenyl-l, 10-phenanthroline; 2,9-bis (naphthalen-2-yl) -4,7-diphenyl-l, 10-phenanthrolines;

Tris (2, 4, 6-trimethyl-3- (pyridin-3-yl) phenyl) boranes; 1-methyl-2 - (4 - (naphthalen-2-yl) phenyl) -1H-imidazo [4,5- f] [1,10] phenanthrolines; Phenyl-dipyrenylphosphine oxides;

Naphthalenetetracarboxylic dianhydride or its imides;

Silacyclopentadiene unit.

The electron injection layer may have a layer thickness in a range of about 5 nm to about 200 nm, for example in a range of about 20 nm to about 50 nm, for example about 30 nm. In an organic functional layer structure 112 having two or more organic functional layer structure units 216, 220, the second organic functional layer structure unit 220 may be formed above or next to the first functional layer structure units 216. Electrically between the organic functional

Layer structure units 216, 220 may be a

Interlayer structure 218 may be formed.

In various embodiments, the

Interlayer structure 218 may be formed as an intermediate electrode 218, for example according to one of

Embodiments of the First Electrode 110. A

Intermediate electrode 218 may be electrically connected to an external voltage source. The external voltage source may provide, for example, a third electrical potential at the intermediate electrode 218. However, the intermediate electrode 218 may also have no external electrical connection, for example by the intermediate electrode having a floating electrical potential.

In various embodiments, the

Interlayer structure 218 may be formed as a charge generation layer structure 218 (CGL). A charge carrier pair generation layer structure 218 may include one or more

electron-conducting charge carrier pair generation layer (s) and one or more hole-conducting charge carrier pair generation layer (s). The electron-conducting

The charge carrier pair generation layer (s) and the hole-conducting charge carrier pair generation layer (s) may each be formed of an intrinsically conductive substance or a dopant in a matrix. The carrier pair generation layer pattern 218 should be designed with respect to the energy levels of the electron-conducting charge carrier pair generation layer (s) and the hole-conducting charge carrier pair generation layer (s) such that at the Interface of an electron-conducting charge carrier pair generation layer with a hole-conducting charge carrier pair generation layer can be a separation of electron and hole. The carrier pair generation layer structure 218 may further include a layer between adjacent layers

Have diffusion barrier.

Each organic functional layer structure unit 216, 220 may for example have a layer thickness of at most approximately 3 μm, for example a layer thickness of at most approximately 1 μm, for example a layer thickness of approximately approximately 300 nm.

The optoelectronic component 100 can optionally have further organic functional layers, for example arranged on or above the one or more

Emitter layers or on or over the or the

Electron transport layer (s). The further organic functional layers can be, for example, internal or external coupling / decoupling structures, which are the

Functionality and thus the efficiency of the optoelectronic device 100 further improve.

On or above the organic functional layer structure 112 or optionally on or above the one or more other of the organic functional ones

Layer structure and / or organic functional layers, the second electrode 114 may be formed. The second electrode 114 may be formed according to any one of the configurations of the first electrode 110, wherein the first electrode 110 and the second electrode 114 may be the same or different. The second electrode 114 may be formed as an anode, that is, as a hole-injecting electrode or as a cathode, that is as a

Electronically injecting electrode. The second electrode 114 may have a second electrical connection to which a second electrical connection

Potential can be applied. The second electrical potential may be from the same or another source of energy

be provided as the first electrical potential and / or the optional third electrical potential. The second electrical potential may be different from the first electrical potential and / or the optionally third electrical potential. The second electrical potential may, for example, have a value such that the

Difference from the first electrical potential has a value in a range of about 1.5 V to about 20 V, for example, a value in a range of about 2.5 V to about 15 V, for example, a value in a range of about 3 V. up to about 12 V.

On the second electrode 114, the second barrier layer 208 may be formed. The second barrier layer 208 may also be referred to as

Thin film encapsulation (TFE)

be designated. The second barrier layer 208 may be formed according to one of the embodiments of the first barrier layer 204.

It should also be noted that in various

Embodiments also entirely on a second

Barrier layer 208 can be dispensed with. In such an embodiment, the optoelectronic component 100 may, for example, have a further encapsulation structure, as a result of which a second barrier layer 208 may become optional, for example a cover 224, for example one

Cavity glass encapsulation or metallic encapsulation. Furthermore, in various embodiments

additionally one or more input / output coupling layers may be formed in the optoelectronic component 100, for example an external outcoupling foil on or above it Carrier 102 (not shown) or an internal one

Decoupling layer (not shown) in the layer cross section of the optoelectronic component 100. The input / output coupling layer can be a matrix and distributed therein

Have scattering centers, wherein the average refractive index of the coupling / decoupling layer is greater or less than that

average refractive index of the layer from which the

electromagnetic radiation is provided. Furthermore, in various embodiments, additionally one or more antireflection coatings (for example

combined with the second barrier layer 208) may be provided in the optoelectronic device 100.

In various embodiments, a conclusive one may be on or above the second barrier layer 208

Bonding layer 222 may be provided, for example, an adhesive or a paint. By means of the coherent connection layer 222, a cover 224 on the second barrier layer 208 can be connected conclusively, for example by being glued on.

A coherent connection layer 222 from a

For example, transparent material can be particles

that scatter electromagnetic radiation,

for example, light-scattering particles. As a result, the coherent bonding layer 222 can act as a scattering layer and improve the color angle distortion and the

Lead out coupling efficiency.

As light-scattering particles, dielectric

Be provided scattering particles, for example, from a

Metal oxide such as silicon oxide (S1O2), zinc oxide (ZnO), zirconium oxide (Zr02), indium tin oxide (ITO) or indium zinc oxide (IZO), gallium (GA 20 _x) aluminum oxide, or titanium oxide. Other particles may also be suitable as long as they have a refractive index that is different from the effective refractive index of the matrix of the coherent bonding layer 222, for example air bubbles, acrylate, or Hollow glass spheres. Furthermore, for example, metallic nanoparticles, metals such as gold, silver, iron nanoparticles, or the like may be provided as light-scattering particles. The coherent bonding layer 222 may have a layer thickness of greater than 1 ym, for example one

Layer thickness of several ym. In different

In embodiments, the interlocking tie layer 222 may include or be a lamination adhesive.

The coherent connection layer 222 may be so

Be prepared to use an adhesive with one

Refractive index which is smaller than that

Refractive index of the cover 224. Such an adhesive may, for example, be a low-refractive adhesive such as an acrylate having a refractive index of about 1.3. However, the adhesive may also be a high refractive adhesive, for example

has refractive index, non-diffusing particles and has a coating thickness-averaged refractive index, the

about the mean refractive index of the organic

functional layer structure 112 corresponds,

for example, in a range of about 1.7 to about 2.0. Furthermore, a plurality of different adhesives may be provided which form an adhesive layer sequence.

In various embodiments, between the second electrode 114 and the interlocking connecting layer 222, an electrically insulating layer (not

shown), for example, SiN, for example, having a layer thickness in a range of about 300 nm to about 1.5 ym, for example, having a layer thickness in a range of about 500 nm to about 1 ym to electrically unstable materials

protect, for example, during a wet chemical

Process. In various embodiments, a cohesive tie layer 222 may be optional, for example, if the cover 224 is formed directly on the second barrier layer 208, such as a glass cover 224 formed by plasma spraying.

On or above the electrically active region 206 may also be a so-called getter layer or getter structure,

For example, a laterally structured getter layer may be arranged (not shown).

The getter layer may include or be formed of a material that absorbs and binds substances that are detrimental to the electrically active region 206. For example, a getter layer may include or be formed from a zeolite derivative. The getter layer can

translucent, transparent or opaque and / or impervious to the electromagnetic radiation emitted and / or absorbed in the optically active region.

The getter layer may have a layer thickness of greater than about 1 μm, for example a layer thickness of several ym.

In various embodiments, the getter layer may include a lamination adhesive or may be embedded in the interlocking tie layer 222. On or above the coherent connection layer 222, a cover 224 may be formed. The cover 224 can be connected to the electrically active region 206 by means of the coherent connection layer 222 and protect it from harmful substances. The cover 224 may include, for example, a glass cover 224, a

Metal foil cover 224 or a sealed

Be plastic film cover 224. The glass cover 224, for example, by means of a frit connection (engl. glass frit bonding / glass soldering / seal glass bonding) by means of a conventional glass solder in the geometric edge regions of the organic optoelectronic component 100 with the second barrier layer 208 and the electrically active region 206 are connected conclusively.

The cover 224 and / or the integral interconnect layer 222 may have a refractive index (for example, at a wavelength of 633 nm) of 1.55.

Furthermore, the above-described optoelectronic

Device 100 comprises a control device 302 - illustrated as equivalent circuit diagrams for a

Optoelectronic component with two electrode areas in Fig.3A and four electrode areas in Fig.3B. The

Controller 302 may be configured by means of a power supply 304 to apply a first electrical current (having a first current and a first voltage) to first electrode region 110A and / or a second one

provide electrical current (with a second current and a second voltage) to the second electrode region HOB. The first electric current and / or the second electric current may / may have current pulses. The power supply 304 may be configured to provide a different electrical current to the first electrode region 110A than to the second electrode region HOB. For example, the

Power supply 304 for the first electrode portion 110A independently of the second electrode region HOB be controlled, for example, electrically isolated from each other

Have current outputs. For example, the

Power supply 304, a first power supply 304A and at least one second power supply 304B, wherein the second power supply 304A may be electrically isolated from the first power supply.

In the optoelectronic component 100 with four

In FIG. 3B, for example, the first electrode region 110 and / or the second electrode region can / can be used Electrode region 114 several independently

have energizable regions, for example a first electrode region 110 with four electrode regions 110A-D; and / or, for example, a first electrode region 110 with two electrode regions 110A, B and a second

Electrode region 114 having two electrode regions 114A, B. An electrode 110 having three or more electrode regions may comprise a plurality of structures 132A-C as described

Embodiments have. The power supply 304 can analogously to the description of Figure 3B several independent

having controllable power supplies 304A-D.

Furthermore, the control device may be configured to change the first electric current and / or the second electric current such that the total emission of the electromagnetic radiation is variable over time. The controller 302 may include an electrical memory by means of which a map for controlling the first electric current and the second electric current is stored. The control device may have an input terminal by means of which a plan for controlling the first electric current and the second electric current can be input. The control device 302 may be configured such that the first electric current and / or the second electric current is a direct current and / or an alternating current

have / t. The control device may be configured such that the first electric current and the second electric current are in at least one of the following characteristics

distinguish: the pulse amplitude; the pulse rate; the

Pulse width; the duty cycle; the pulse shape; and / or the number of pulses per sample interval.

The controller 302 may be configured such that changing the first electric current is forming a reverse voltage across the first electrode region 110A and the second electrode 114 and / or across the second electrode region HOB and the second electrode 114

have / t, for example, providing a

Reverse pulse.

The control device 302 may be configured such that the changing of the first electric current and / or the second electric current has a pulse modulation, for example a pulse width modulation

Pulse frequency modulation and / or a

Pulse amplitude modulation.

The control device 302 may be configured such that the first electric current and / or the second electric current are / is changed such that the color location, the brightness and / or the color saturation of the emitted

electromagnetic radiation locally from the

optoelectronic component is temporally variable.

In various embodiments, a method 400 for operating an optoelectronic device described above is provided. The method may include providing 402 (illustrated in FIG. 4A) a first electrical current 412

(illustrated in Fig. 4B, C) in the first

Electrode portion 110A and / or providing 402 of a second electric current 414 in the second

Have electrode area. The first electrical current 412 and / or the second electrical current 414 may comprise current pulses 434, 438.

An electrical property of the optoelectronic

Component 100 may be described with a characteristic r, with:

(I) r ~ dV / dj, where V is an operating voltage and j is an operating current density and dV / dj is the mathematical derivative of the operating voltage

2 is after the operating current density. The unit of r is Qcm. The quantity r describes the differential electric

Resistance of an optoelectronic component 100 with a specific optically active surface. An increase in the area of the optoelectronic component can correspond to a parallel connection of resistors, in which the reciprocal values of the electrical resistances add up. By the relationship between r and the operating current density j according to the characteristic of the organic light emitting device, the operating point r = thus determined is assigned an operating current density (averaged over the luminous area).

For the design of the characteristic of the optoelectronic

For example, device 100 may be a reference device having an organic functional layer structure

are used between two electrodes which are connected to the organic functional layer structure 112 of the

optoelectronic component 100 matches, but has the smallest possible optically active surface. In the thermally steady state can by means of the

Reference component dV / dj be determined at the operating point r to be determined. The thermally steady state is, for example, after an operating time of

Reference device for a period of about 10

Minutes reached. For an operation of the device 100, an operating point r = can be chosen such that: 0.75 -S U -S 1, with

(II) U = (1-H) / (1 + H),

-1

(III) H = cosh (L / A),

(IV) L = 0.5 xd; d is the width of the luminous area, ie the distance between two contact surfaces 134A, 143B; and

1.2

(V) Λ = (r / R) where R is the sheet resistance of the first electrode 110.

The relationships for U, H and Λ can be one

analytical model. In the model can

strip OLEDs are considered. compare to

Simulations have shown that the above

Relationships underlying analytical model describes the behavior of the organic light-emitting device with sufficient accuracy.

The quantity Λ denotes a characteristic length resulting from the sheet resistance R of the first electrode 110 and the operating point r.

The smaller the parameter H, the smaller the

Parameter U and the greater the voltage drop across the illuminated area and the greater is the

Luminance gradient in the illuminated area.

The numerical values given below are pure

by way of example and not by way of limitation. At a

Sheet resistance R = 15 Q / D of the first electrode 110 and a component width of d = 2.8 cm, for example, the

2

first operating point r = r ^ i = 70 Qcm and the second

2

Operating point r = r ^ 2 ⁼ 35 Qcm selected. Thus, at the first operating point r = r ^ i for Λ = 2.16, H = 0.82 and U = 0.92, while for the second operating point r = r ^ 2 the values Λ = 1.53, H = 0.69 and U = 0.80. At the first operating point r ^ i, therefore, U = 0.92 while at elevated

Operating conditions at the second operating point r ^ 2 U is about 0.8. In the second operating point the voltage drop is over the luminous area is significantly higher than at the first operating point, so that in the second operating point a stronger

Luminance gradient can be achieved. By means of the selected operating point r = it can be achieved that an acceptable homogeneity of the luminance in one direction is achieved via the optically active surface, for example via the luminous surface of an organic light-emitting component, while at the same time

Luminance gradient is achieved in a different direction.

The optoelectronic component 100 can be operated with a first current 412 from the first electrode area 110A to the second electrode 114 and a second current 414 from the second electrode area to the second electrode 114, such that the current density averaged over the luminous area in the first electrode area 110A other than in the second electrode area HOB. The optoelectronic component 110 can thus with

different operating current densities are operated simultaneously.

Furthermore, the method may include changing 404 the first electric current 412 and / or the second electric current 414 such that the total emission 416 of the electromagnetic radiation is time-variable. The total emission may be on the luminance, the color location, the brightness, the color saturation, the luminance gradient and / or a polarization of the emitted

relate to electromagnetic radiation.

The first electric current 412 and / or the second

Electric power 414 may include a DC and / or an AC, such as one

DC component, for example, in which the first

Electrode region and / or the second electrode region are biased. The first electrical current 412 and the second electrical current 414 may be in at least one of the following

Properties (illustrated in Figure 4B, C): the pulse amplitude 442, 444; the pulse rate; the pulse width 436, 440; the duty cycle; the pulse shape; and / or the number of pulses per sample interval 432.

The changing 404 of the first electric current 412 and / or the second electric current 414 have a pulse modulation, for example a pulse width modulation, a pulse frequency modulation and / or a

Pulse amplitude modulation. The first electrode region 110A and the second one

Electrode area HOB can be controlled such that in the operating time 408 at least the first

Electrode area 110A is energized (illustrated in Figure 4B by the reference numeral 422), at least the second electrode region HOB is energized (illustrated in Figure 4B by the reference numeral 424) or the first

Electrode area 110A and the second electrode area HOB are energized simultaneously (illustrated in Figure 4B by the reference numeral 426).

The first electric current 412 and / or the second

Electric current 414 can be changed such that the color locus of the emitted electromagnetic radiation locally from the optoelectronic component 100 in time

is changeable. The first electric current 412 and / or the second electric current 414 may be changed such that the brightness of the emitted

electromagnetic radiation locally from the

optoelectronic component 100 is temporally variable. The first electric current 412 and / or the second

Electric currents 414 may be changed such that the color saturation of the emitted electromagnetic radiation is locally variable in time by the optoelectronic component 100.

To adjust the brightness of the illuminated area in the

Electrode areas 110A, HOB at a same

Luminance gradients can be the operating current and thus the associated averaged over the luminous area

Operating current density can be modulated by means of pulse width modulation (PWM), wherein the pulse length, pulse shape and / or the pulse height or pulse amplitude can be varied.

To set a maximum brightness of the luminous area in the operation of the optoelectronic component at the operating point r = can the operating current density of the first

electric current 412 and / or the second electric current 414 have a constant current component.

For changing the luminance gradient of the optically active surface, the operating point r = and thus the

corresponding over the luminous area in the area of the first

Electrode portion 110A and second electrode area HOB average operating current density can be varied.

For example, the first electric current 412 and / or the second electric current 414 a first operating point r = r ^ i with an operating current density j ^ l and a second operating point r = r ^ 2 ^w ith a

Operating current density j ^ 2, where: j ^ 2> DAl-

During operation of the optoelectronic component 100, by means of a variation of the voltage applied between the electrode regions 110A, B and the second electrode 114

Operating currents averaged over the luminous area

Operating current density j be varied with j ^ l - j - jA2.

As a result, the luminance gradient on the luminous area can be varied. At the higher operating current density j ^ 2 at the second operating point r = r ^ 2 can be a stronger Voltage drop along the longitudinal direction to the contact surfaces 134A, B are present, so that thereby a greater luminance gradient can be achieved than in an operation at the first operating point r = with a

Operating current density jAl

Changing the operating current density j between the two operating points r ^ i and r ^ 2 may result in changing the

Luminance gradients in the luminous area lead. By means of a pulse width modulation, the first electric current 412 and / or the second electric current 414, the brightness of the luminous area can be independent of

Luminance gradients are changed. Furthermore, in the operation of the optoelectronic component 100, the intensity of the luminance gradient can also be modulated, while the total luminance of the luminous flux of the

Luminous surface radiated light is kept constant. In other words, the overall brightness of an organic light emitting device 100 can be kept constant while the intensity of the luminance gradient over the

Luminous surface varies or is modulated. This can be achieved by, for example, choosing the first operating point r 1 i such that a more pronounced

Luminance gradient is present, and the optoelectronic

Device 100 is operated with a pulsed first electrical current 412 and / or a pulsed second electrical current 414 with an operating current density amplitude

will / will, which corresponds to the operating current density j ^ l.

The first electrical current 412 and the second electrical current 414 may be the same or different

Operating current density amplitude / n have. With a variation of the amplitude of the pulse-modulated first electric current 412 and / or second electrical

Current 414 may be the magnitude of the luminance gradient be varied. When changing the

Operating current density amplitude, the pulse length and / or the duty cycle can be adjusted so that over the

Luminous area averaged different operating current densities in the time average to represent a given

Pattern lead.

By means of a pulse amplitudes and pulse width modulation, the first electric current 412 and / or the second

Electricity 414 can reduce the brightness of the

Luminous surface and the luminance gradient in the luminous area in the region of the first electrode region 110A and the second electrode region HOB be changed independently.

For setting a pattern to be displayed in the

Luminous surface, the first electric current 412 and the second electric current 414, a different

Have pulse modulation. The individual pulses of the first electric current 412 and of the second electric current 414 can have a non-linear relationship such that a pattern to be displayed can be represented by means of a sequence of pulses and the optical superimposition of the individual pulses.

Furthermore, the organic functional layer structure can be designed such that, in addition to a variation of the luminance gradient, a variation of a

Color gradients can be achieved over the illuminated area.

In one embodiment, by means of the method, the luminous surfaces of an optoelectronic component with a common cathode but different anodes

be homogenized. These could light up homogeneously in stand-alone mode and glow inhomogeneously in common operation. Furthermore, inhomogeneous patterns can be represented, for example in the case of complex-shaped organic light-emitting diodes. In various embodiments, a

Optoelectronic component and a method for operating an optoelectronic component provided, with which it is possible to represent time variable different homogeneous or deliberately inhomogeneous luminance distributions that would not be reproduced without this method, for example. The method allows with relatively little effort to provide extremely many, different luminance distributions and time sequences thereof. For any desired luminance distribution, the respective pulse coefficients, for example

Pulse width modulation coefficients are calculated, with which the desired luminance distribution can be modeled. Furthermore, an inhomogeneous component can be homogenized thereby and by means of the complex geometry of the component with relatively little effort. By means of a central contacting of a flat component, the center of the component can also be controlled by the method described above.

Claims

Optoelectronic component (100), comprising:

A first electrode (110),

A second electrode (114),

• an organic functional layer structure

(112), and

o being the organic functional

Layer structure (112) between the first electrode (110) and the second electrode (114) is formed, and

o being the organic functional

Layer structure (112) is adapted to convert an electrical current into an electromagnetic radiation and emit; and o wherein at least the first electrode (110)

at least a first electrode region (110A) and a second electrode region (HOB), which are physically and with each other

are electrically connected; and

A control device (302) which is set up: o for providing (402) at least one first electrical current (412) into the first electrode region (110A) and / or to one

Providing (402) at least one second electrical current to the second one

Electrode region (HOB), wherein the first electrical current (412) and / or the second electrical current (414) comprise current pulses (434, 438); and

o changing (404) the first electric current (412) and / or the second electric current (414) such that the total emission (416) of the electromagnetic radiation is time-varying. Optoelectronic component (100), comprising:

A first electrode (110),

A second electrode (114),

• an organic functional layer structure

(112), and

o being the organic functional

Layer structure (112) between the first

Electrode (110) and the second electrode (114) is formed, and

o being the organic functional

has at least a first terminal and a second terminal, and

• a control device (302) that is so

is arranged and electrically connected to at least the first terminal and the second terminal, that the electrical connection with the first

Connection of the electrical connection to the second terminal electrically isolated, so that:

o at least one first electrical current (412) to the first terminal and a second electrical current to the second terminal can be provided, wherein the first electric current (412) and / or the second electric current (414)

Has current pulses (434, 438); and

o the first electric current (412) and / or the second electric current (414) are variable such that the total emission (416) of the

electromagnetic radiation in time

is changeable.

Optoelectronic component (100) according to claim 1 or 2,

wherein the control device (302) comprises an electrical memory by means of which a plan for controlling the first electric current (412) and the second electric current (414) is stored.

Optoelectronic component (100) according to one of claims 1 to 3,

wherein the control device (302) has an input port by means of which a plan for controlling the first electric current (412) and the second electric current (414) can be input.

Optoelectronic component (100) according to one of claims 1 to 4,

wherein the first electrical current (412) and the second electrical current (414) are in at least one

Property differ from each other from the group of properties:

The pulse amplitude;

• the pulse rate;

• the pulse width;

• the duty cycle;

• the pulse shape; and or

• the number of pulses per sample interval.

Optoelectronic component (100) according to one of claims 1 to 5,

wherein the control device (302) is arranged such that changing (404) of the first electrical

Current (412) and / or the second electrical current (414) has a pulse modulation, preferably a pulse width modulation, a pulse frequency modulation and / or a pulse amplitude modulation.

Method for operating an optoelectronic

A device according to any one of claims 1, 3 to 6, the method (400) comprising:

Providing (402) a first electrical

Stream (412) into the first electrode area (110A) and / or providing (402) a second one electric current (414) in the second

Electrode area (HOB), with the first

electric current (412) and / or the second

electric current (414) has current pulses (434, 438); and

Changing (404) the first electrical current (412) and / or the second electrical current (414) such that the total emission (416) of the

electromagnetic radiation is temporally variable.

Method for operating an optoelectronic

Component according to one of claims 2 to 6,

the method (400) comprising:

Providing a first electrical current to the first terminal and / or providing a second electrical current to the second

Terminal, wherein the first electrical current (412) and / or the second electrical current (414)

Has current pulses (434, 438); and

Changing (404) the first electric current (412) and / or the second electric current (414) such that the total emission (416) of the

electromagnetic radiation is temporally variable.

Method (400) according to claim 7 or 8,

wherein the first electrical current (412) and / or the second electrical current (414) is a direct current

and / or having an alternating current.

The method (400) of one of claims 7 to 9, wherein the first electrical current (412) and the second electrical current (414) are in at least one of

Property differ from each other from the group of properties:

The pulse amplitude;

• the pulse rate; • the pulse width;

• the duty cycle;

• the pulse shape; and or

• the number of pulses per sample interval.

The method (400) according to any one of claims 7 to 10, wherein changing (404) the first electrical current (412) and / or the second electrical current (414) comprises pulse modulation, preferably one

Pulse width modulation, a pulse frequency modulation and / or a pulse amplitude modulation.

Method (400) according to one of claims 7 to 11, wherein the first electrical current (412) and / or the second electrical current (414) are changed in such a way that the color locus of the emitted electromagnetic radiation is temporally variable from the optoelectronic component. 13. The method according to claim 7, wherein the first electric current and / or the second electric current are modified such that the brightness of the emitted electromagnetic radiation is locally variable in time from the optoelectronic component is.

The method (400) according to any one of claims 7 to 13, wherein the first electric current (412) and / or the second electric current (414) are changed such that the color saturation of the emitted

electromagnetic radiation locally from the

optoelectronic component is temporally variable

Method (400) according to one of claims 7 to 14, wherein the first electrical current (412) and / or the second electrical current (414) are changed in such a way that the emitted electromagnetic radiation is flicker-free, preferably by the first have electrical current and / or the second electrical current having a frequency of greater than 50 Hz / t.

Method (400) according to one of claims 7 to 15, wherein the total emission of the electromagnetic

Radiation in the form of a Fourier series of

electromagnetic radiation is emitted, which are emitted by means of the time-varying first electric current (412) and second electric current (414).