WO2015062866A1 - Composant optoélectronique et procédé pour faire fonctionner un composant optoélectronique - Google Patents

Composant optoélectronique et procédé pour faire fonctionner un composant optoélectronique Download PDF

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Publication number
WO2015062866A1
WO2015062866A1 PCT/EP2014/072173 EP2014072173W WO2015062866A1 WO 2015062866 A1 WO2015062866 A1 WO 2015062866A1 EP 2014072173 W EP2014072173 W EP 2014072173W WO 2015062866 A1 WO2015062866 A1 WO 2015062866A1
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WIPO (PCT)
Prior art keywords
electrode
current
electric current
electrical current
electrical
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PCT/EP2014/072173
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German (de)
English (en)
Inventor
Thorsten VEHOFF
Karsten Diekmann
Arndt Jaeger
Benjamin Krummacher
Kilian REGAU
Original Assignee
Osram Oled Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Oled Gmbh filed Critical Osram Oled Gmbh
Priority to DE112014004950.6T priority Critical patent/DE112014004950A5/de
Publication of WO2015062866A1 publication Critical patent/WO2015062866A1/fr

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Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B45/00—Circuit arrangements for operating light-emitting diodes [LED]
    • H05B45/40—Details of LED load circuits
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B45/00—Circuit arrangements for operating light-emitting diodes [LED]
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B45/00—Circuit arrangements for operating light-emitting diodes [LED]
    • H05B45/10—Controlling the intensity of the light
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B45/00—Circuit arrangements for operating light-emitting diodes [LED]
    • H05B45/60—Circuit arrangements for operating LEDs comprising organic material, e.g. for operating organic light-emitting diodes [OLED] or polymer light-emitting diodes [PLED]
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B45/00—Circuit arrangements for operating light-emitting diodes [LED]
    • H05B45/30—Driver circuits
    • H05B45/32—Pulse-control circuits
    • H05B45/325—Pulse-width modulation [PWM]
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B45/00—Circuit arrangements for operating light-emitting diodes [LED]
    • H05B45/30—Driver circuits
    • H05B45/32—Pulse-control circuits
    • H05B45/33—Pulse-amplitude modulation [PAM]
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B45/00—Circuit arrangements for operating light-emitting diodes [LED]
    • H05B45/30—Driver circuits
    • H05B45/32—Pulse-control circuits
    • H05B45/335—Pulse-frequency modulation [PFM]
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B45/00—Circuit arrangements for operating light-emitting diodes [LED]
    • H05B45/30—Driver circuits
    • H05B45/395—Linear regulators
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps
    • Y02B20/30—Semiconductor lamps, e.g. solid state lamps [SSL] light emitting diodes [LED] or organic LED [OLED]

Definitions

  • Optoelectronic device and a method for operating an optoelectronic device provided.
  • organic light emitting diodes organic light emitting diodes
  • OLED emitting diode
  • An organic optoelectronic component for example an OLED, may comprise an anode and a cathode
  • the organic functional layer system may include one or more emitter layers in which electromagnetic radiation is generated, one or more charge carrier pair generation layer structures of each two or more carrier pair generation layers
  • Charge carrier pair generation and one or more
  • HTL Hole transport layer
  • ETL electron transport layer
  • the first electrode is contacted by holes which pass through the entire OLED. This can be applied to each contacted point of the second electrode, a different voltage.
  • a conventional method for targeted organic light-emitting diodes the first electrode is contacted by holes which pass through the entire OLED. This can be applied to each contacted point of the second electrode, a different voltage.
  • organic light emitting diode designed as an OLED display.
  • OLED displays are darker and more expensive than simple OLEDs.
  • Optoelectronic component and a method for operating an optoelectronic component provided, with which it is possible to represent time variable different homogeneous or deliberately inhomogeneous luminance distributions that would not be reproduced without this method, for example.
  • Optoelectronic component comprising: a first
  • Electrode a second electrode, an organic compound
  • the organic functional layer structure is formed between the first electrode and the second electrode, and wherein the organic functional layer structure is configured to convert an electric current into electromagnetic radiation and emit; and wherein at least the first electrode has at least a first electrode region and a second electrode region; and a
  • Control device that is set up for a
  • a first electric current and a second electric current may be used in various embodiments
  • Pulse width modulation can be modulated. In different
  • the electrode may more than two
  • Electrodes regions or contact for energizing and are energized with more than two electrical currents for example, three, four, five, six or more
  • the first electrode can be or be formed such that the first
  • Electrode region is at least partially electrically insulated from the second electrode region, for example by means of a dielectric layer or an air bridge.
  • the first electrode can be or be formed such that the first
  • Electrode region is electrically connected by an electrical resistance with the second electrode region.
  • the electrical resistance may be the sheet resistance of the first electrode.
  • the first electrode may be formed as an anode and the second electrode as a cathode or be. In one embodiment, the first electrode may be formed as a cathode and the second electrode as an anode or be. In one embodiment, the first electrode may be a
  • the first electrode can comprise or be formed from a metal, for example an electron-conducting or hole-conducting transparent or translucent metal oxide or an opaque metal. In one embodiment, the first electrode may be formed on or above the organic functional layer structure.
  • the organic functional group is organic functional
  • the first electrode may be formed in the organic functional layer structure, for example as an intermediate electrode.
  • the first electrode may have through contacts through the organic functional layer structure or be electrically connected to vias,
  • the organic compound for example, in an optoelectronic component, which is designed as a so-called bottom emitter, in which the first electrode is transparent, the organic compound
  • Layer structure is contacted electrically.
  • at least one via can be formed in approximately the planar center of the planar organic functional layer structure.
  • Electrode portion which is electrically connected to the contact.
  • control device may comprise an electrical memory by means of which a plan for controlling the first electric current and the second electric current is stored.
  • control device a
  • Input terminal by means of which have a plan for
  • control device may be configured such that the first electric current and / or the second electric current have a direct current and / or an alternating current.
  • control device may be configured such that the first electrical current and the second electrical current differ in at least one of the following properties: the pulse amplitude; the pulse rate; the pulse width; the duty cycle; of the
  • control device may be configured such that changing the first electric current and / or the second electric current a
  • Pulse modulation has, for example, a Pulse width modulation, a pulse frequency modulation and / or a pulse amplitude modulation.
  • control device may be configured such that the first electric current and / or the second electric current is / are changed such that the color locus of the emitted electromagnetic
  • control device may be configured such that the first electric current and / or the second electric current is / are changed in such a way that the brightness of the emitted electromagnetic energy is changed
  • Electromagnetic radiation can affect the position on the luminous area, i. the optically active surface, the optoelectronic component, of which the
  • control device may be configured such that the first electric current and / or the second electric current is / are changed in such a way that the color saturation of the emitted electromagnetic radiation is local to the optoelectronic component
  • Component provided comprising:
  • the first electric current and / or the second electric current having current pulses; and changing the first electric current and / or the second electric current such that the total emission of the electromagnetic radiation is temporally variable.
  • the first electrical current and / or the second electrical current may / may be a direct current and / or an alternating current
  • the first electrical current and the second electrical current may be in at least one of the following characteristics
  • the pulse amplitude; the pulse rate; the pulse width; the duty cycle; the pulse shape; and / or the number of pulses per sample interval distinguish: the pulse amplitude; the pulse rate; the pulse width; the duty cycle; the pulse shape; and / or the number of pulses per sample interval.
  • changing the first electric current and / or the second electric current may have a pulse modulation
  • a pulse width modulation For example, a pulse width modulation, a pulse width modulation, a pulse width modulation, a pulse width modulation, a pulse width modulation, a pulse width modulation, a pulse width modulation, a pulse width modulation, a pulse width modulation, a pulse width modulation, a pulse width modulation, a pulse width modulation, a pulse width modulation, a pulse width modulation, a pulse width modulation, a
  • the first electric current and / or the second electric current can be changed in such a way that the color locus of the emitted electromagnetic radiation is locally from the
  • optoelectronic component is temporally variable.
  • the first electrical current and / or the second electrical current can be changed in such a way that the brightness of the emitted electromagnetic radiation is determined locally by the first electrical current and / or the second electrical current.
  • the optoelectronic component is temporally variable.
  • the first electric current and / or the second electric current can be changed such that the color saturation of the emitted electromagnetic radiation is locally variable in time by the optoelectronic component.
  • FIGS 1A-D are schematic representations optoelectronic
  • Figures 2 is a schematic representation of a
  • FIGS 3A, B are schematic representations of optoelectronic
  • FIGS. 4A-C schematically show a method for operating an optoelectronic component according to various exemplary embodiments.
  • optoelectronic components are described, wherein an optoelectronic
  • the optically active region can emit electromagnetic radiation by means of an applied voltage to the optically active region.
  • the electromagnetic radiation may have a wavelength range of X-radiation, UV radiation (A-C),
  • a planar optoelectronic component which has two flat, optically active sides, can be used in the
  • Connection direction of the optically active pages for example, be transparent or translucent, for example, as a transparent or translucent organic
  • a planar optoelectronic component can also be referred to as a planar optoelectronic component.
  • the optically active region can also have a planar, optically active side and a flat, optically inactive Side, for example, an organic light emitting diode, which is set up as a so-called top emitter or bottom emitter.
  • the optically inactive side may be in
  • the beam path of the optoelectronic component can be directed, for example, on one side.
  • emitting electromagnetic radiation can emit
  • providing electromagnetic radiation may be understood as emitting electromagnetic radiation by means of an applied voltage to an optically active region.
  • an electromagnetic radiation emitting diode as an organic electromagnetic radiation emitting diode, as an electromagnetic radiation emitting transistor or as an organic electromagnetic radiation
  • Then be formed emitting transistor.
  • electromagnetic radiation emitting device can, for example, as a light emitting diode (light emitting diode, LED), as an organic light emitting diode (organic light emitting diode, OLED), as light emitting
  • LED light emitting diode
  • OLED organic light emitting diode
  • Transistor for example an organic one
  • Organic field effect transistor and / or organic electronics may be formed.
  • the organic field-effect transistor may be a so-called "all-OFET" in which all layers are organic Component may be part of an integrated circuit in various embodiments.
  • a plurality of electromagnetic radiation emitting components may be provided, for example housed in a common housing.
  • An optoelectronic component may have an organic functional layer system, which is synonymous as organic functional
  • the functional layer structure may include or may be formed from an organic substance or mixture of organic substances, for example, configured to provide electromagnetic radiation from a provided electrical current.
  • An organic light emitting diode 200 may be formed as a top emitter or a bottom emitter. In a bottom emitter, light is emitted from the electrically active region through the
  • Carrier emitted.
  • light is emitted from the top of the electrically active region and not by the carrier.
  • a top emitter and / or bottom emitter may also be optically transparent or optically translucent, for example, any of those described below
  • Layers or structures may be transparent or translucent.
  • the optically active time of an optoelectronic component is the time in which an optically active structure
  • Component is the time in which an optically active
  • Structure does not emit electromagnetic radiation.
  • the duty cycle gives the ratio of the optically inactive time to the optically active time in one
  • Control interval optically inactive (unpowered) and emits electromagnetic radiation in 50% of the time of the control interval.
  • Component can the optically active time, for example by means of a mathematical convolution of the pulse widths and
  • Pulse rate can be determined in a drive interval.
  • the maximum pulse amplitude or pulse height can be understood as the location of a pulse of electromagnetic radiation at which the pulse has the highest luminance.
  • Optoelectronic device 100 provided - illustrated in Fig.lA to ID.
  • the optoelectronic component 100 may include a first electrode 110, a second electrode 114, and an organic functional one
  • the organic functional layer structure 112 may be formed between the first electrode 110 and the second electrode 114.
  • Layer structure 112 may be formed, a
  • Electrodes 110, 114 and the carrier 102 are in the
  • At least the first electrode 100 may include at least a first electrode region 110A and a second electrode region 110A
  • the first electrode 110 may have a structure 132 that includes the first electrode region 110A of the second
  • Electrode area HOB electrically and / or physically
  • the structure 132 may be, for example, an electrical resistor and / or a dielectric.
  • the first electrode 110 may be so
  • Electrode region 110A is electrically insulated from the second electrode region HOB, for example by means of a dielectric structure 132, an air gap 132 and / or a glass structure 132, for example by forming a gap in the first electrode 110.
  • the first electrode 110 may be formed such that the first electrode region 110A is electrically connected to the second electrode region HOB through an electrical resistance 132
  • the electrical resistance may, for example, be or have the sheet resistance of the first electrode HO.
  • the first electrode HO may be at least the first
  • Electrode portion HOA and the second electrode portion HOB which are connected to each other physically, and electrically conductive or electrically conductive.
  • the first electrode HO is an electrically conductive
  • the first electrode HO having the first electrode region HOA and the second electrode region HOB may be formed in one piece, i. be one piece.
  • the first electrode HO may have a sheet resistance.
  • the first electrode portion 110A has the first side surface and the second electrode portion HOB has the second side surface.
  • the first electrode portion 110A has the first side surface and the second electrode portion HOB has the second side surface.
  • Electrode portion 110A and the second electrode portion HOB by means of sheet resistance of the electrically conductive layer of the first electrode 110 is electrically conductive
  • the first electrode 110 has at least one first connection and one connection, which are set up for electrical connection of the component to a component-external electrical energy source.
  • the at least first terminal and second terminal are electrically conductively connected to the electrode; and contactable,
  • the at least first terminal and second terminal may be electrically isolated from each other such that the first terminal and the second terminal
  • the first terminal and the second terminal may be connected by means of the first electrode
  • the first electrode can be electrically conductively connected to one another such that a first electrical potential and to the second terminal a second electrical potential can be provided to the first terminal, wherein the first electrical potential may be different from the second electrical potential.
  • the first electrode can be an electrical
  • the first electrode 110 may be in the form of an anode and the second
  • Electrode 114 may be formed as a cathode or. The however, the first electrode 110 may be formed as a cathode and the second electrode 114 may be formed as an anode.
  • the first electrode 110 may comprise or be formed from a transparent electrically conductive oxide and / or a metal.
  • the first electrode 110 may be formed on or over the organic functional layer structure 112
  • functional layer structure 112 may be formed on or over the first electrode 110 (illustrated in FIG. 1
  • the first electrode 110 as an intermediate electrode (interlayer structure - see
  • the first electrode 110 may be through contacts through the organic functional
  • Layer structure 112 have or be electrically connected to such. At least one through contact may in one embodiment be formed in approximately a planar center of the planar organic functional layer structure 112.
  • the first electrode 110 may be electrically separated from the second electrode 114 by means of an electrical insulation 130.
  • the electrical insulation may include, for example, a polyimide or be formed therefrom.
  • the optoelectronic component 100 can by means of a contact region 134A, B, for example in the form of a
  • the first electrode region 110A may have, for example, a first contact region 134A and the second electrode region HOB a second
  • the at least two contact areas 134A, 134B may
  • the first electrode 110 and the organic functional layer structure 112 may be formed such that the entire luminous area can be supplied with each contact area 134A, 134B alone.
  • the first electrode 110, the second electrode 114 and / or further electrodes may each have two or more electrode regions 110A, B and / or contact regions 134A, 134B, for example two to five independently energisable ones
  • Electrode areas 110A, B Independent from each other
  • energizable electrode areas each have individual, electrically isolated contact terminals with a
  • the two or more terminals of an electrode 110, 114 may be energized with different currents, which may vary over time.
  • the different streams can be
  • an adjustable luminance distribution can be formed.
  • Voltages can be correlated by means of pulse modulation, for example pulse width modulation (PWM), pulse amplitude modulation (PAM) and / or pulse frequency modulation (PFM); be superimposed optically.
  • PWM pulse width modulation
  • PAM pulse amplitude modulation
  • PFM pulse frequency modulation
  • a luminance distribution can be characterized by means of the color location, the polarization, the brightness, the color saturation and / or the luminance gradient of an emitted electromagnetic radiation.
  • the electrode 110, 114 with a plurality of electrode regions 110A, HOB energized with different currents can thus provide an electrical voltage between the electrode regions 110A, HOB, ie within the electrode 110, 114.
  • the electrical potential at an electrode region 110A, HOB of the first electrode 110 can be understood as the electrical potential that is formed with respect to the second electrode 114.
  • the second electrode 114 may be at a fixed electrical potential. More precisely: the connections of the second
  • Electrode 114 may be at a fixed electrical potential. Due to the sheet resistance of the second
  • Electrode 114 may be used in the second electrode
  • the potential at the electrode regions 110A, HOB can be different in time and from one another, for example, in that the temporal variation of the
  • electrical voltages are different. It may be possible for the same voltage to be applied to the electrode regions 110A, HOB at a certain point in time, wherein the further voltage is applied
  • the respective time-varying electrical voltage of the electrode areas HOA, HOB can be determined spatially and spatially, taking into account the surface resistance 132 of the first electrode HOA and the associated voltage drop in the first electrode HO as a function of a distance from the external electrical contacts in the contact areas 134A, B cause temporally varying current density distribution of the current.
  • This current density distribution can be impressed into the organic functional layer structure, i. be converted into a luminance distribution.
  • Electrode areas HOA, B can be different
  • Luminance in different surface and edge areas of the luminous surface cause.
  • the different luminances may vary from each other over time. This can be a temporally and spatially varying Luminance distribution over the luminous surface of the optoelectronic component 100 are caused.
  • the temporal variation of the different electrical voltages can be during operation of the optoelectronic
  • Component 100 emitted electromagnetic radiation.
  • the variation can be varied with the choice of the electrical currents in the electrode areas 110A, B so that they are perceptible to the observer in their strength and frequency.
  • a variable electromagnetic radiation ie electromagnetic radiation with a temporally and spatially varying luminance distribution, are emitted. This can be more pleasant in lighting applications than a temporally and spatially homogeneous and constant luminance distribution.
  • temporal change of the total emission of the optoelectronic component of the impression of a wave or cloud movements or the flickering of candles or flames are caused.
  • organic light emitting diode may have a non-linear luminance-voltage characteristic. Furthermore, that can
  • Optoelectronic component having a complex geometric shape for example, have a geometrically complex shaped optically active surface. This can be some
  • organic light-emitting diodes by means of a linear combination of voltages can not be displayed.
  • these can be represented by means of an optical overlay of different images via pulse modulation.
  • Luminance distributions can be displayed, which can not be displayed even with many different voltages.
  • the resulting images can also be displayed in a temporal sequence.
  • different superimpositions and stress distributions can be performed by a control device 302 (illustrated in FIG. 3).
  • the optoelectronic component 100 successively represented by the optoelectronic component 100, for example in analogy to the
  • the first electrode 110, the second electrode 114 and the organic functional layer structure 112 may each have a large area. This can do that
  • Optoelectronic component 100 is a coherent
  • luminous surface which is not structured in functional subregions, for example, a segmented into functional areas luminous area or a luminous area, which is formed by a plurality of pixels (pixels).
  • “Large area” can mean that the optically active side of an area
  • a contiguous area for example greater than or equal to a few square millimeters
  • the optoelectronic device For example, greater than or equal to one square centimeter, for example, greater than or equal to one square decimeter.
  • the optoelectronic device For example, the optoelectronic device
  • the optoelectronic component can have a large luminous area.
  • a large luminous area may be, for example, a square area with an edge length of more than 10 cm or more than 20 cm or more than 25 cm or more than 50 cm.
  • Luminous surface can be achieved.
  • the organic functional layer structure 112 may be formed to have a high voltage sensitivity. A high voltage sensitivity can be found in
  • organic functional layer structure two or more
  • the at least two emitter layers can be formed, for example, to emit electromagnetic radiation with the same color locus, that is, for example, both red, yellow, green or blue light.
  • the emitter layers can also electromagnetic radiation with the same color locus, that is, for example, both red, yellow, green or blue light.
  • the emitter layers can also electromagnetic radiation with the same color locus, that is, for example, both red, yellow, green or blue light.
  • the emitter layers can also electromagnetic radiation with
  • emit different properties for example, radiate different colored light, such as red and yellow light or red and green light.
  • two emitter layers may be directly adjacent to each other and adjacent to each other.
  • Interlayer can reduce the voltage sensitivity. Between one of the electrodes 110, 114 and the
  • Emitter layers can be formed at least two energy barrier structures.
  • the energy barrier structures can be designed as an energy barrier for charge carriers in the direction of the emitter layers, for example with an energy level of approximately 0.1 eV. Charge carriers can overcome the energy barrier on their way from the electrode 110, 114 to the emitter layers.
  • An organic functional layer structure with an energy barrier structure for charge carriers in the direction of the emitter layer can be formed at least two energy barrier structures.
  • the color locus may be dependent on the number of photons generated in each of the at least two emitter layers. Charge carriers from one of the electrodes 110, 114 overcome in the direction of
  • Emitter layers an energy barrier. The number of
  • Charge carriers that overcome the energy barrier may be dependent on the operating voltage across the electrodes 110, 114. These charge carriers may be in the
  • Energy barrier structure closer emitter layer with oppositely charged charge carriers recombine.
  • emitter layer produce more photons.
  • organic functional layer structure 112 with emitter layers which emit electromagnetic radiation having a different color locus it is possible by means of the
  • the relative intensity of the emitted electromagnetic radiation from the emitter layers can be varied.
  • the variation may be, for example, by means of an above
  • the organic functional layer structure 112 can thus be designed in such a way that a variation of the current in the first electrode region 110A and / or in the second electrode region HOB can be achieved by changing the currents
  • Color gradient is achieved over the illuminated area.
  • Optoelectronic device 100 may include a hermetically sealed substrate 228, an active region 206, and an encapsulation structure 226 (illustrated in FIG.
  • the hermetically sealed substrate may include the carrier 102 and a first barrier layer 204.
  • the active region 206 is an electrically active region 206 and / or an optically active region 206.
  • the active region 206 is, for example, the region of the optoelectronic component 100 in which electric current flows and / or in the operation of the optoelectronic component 100 electromagnetic radiation is generated and / or absorbed.
  • the electrically active region 206 may include the first electrode 110, the organic functional layer structure 112, and the second electrode 114.
  • the organic functional layer structure 206 may include one, two or more functional layered structure units and one, two or more interlayer structures between the layered structure units.
  • Functional layer structure 112 may include, for example, a first organic functional layer structure unit 216, an interlayer structure 218, and a second organic functional layer structure unit 220.
  • the encapsulation structure 228 may be a second
  • Barrier layer 208 a coherent connection layer 222 and a cover 224 have.
  • the carrier 102 may be glass, quartz, and / or a
  • the carrier 102 may be a plastic film or a laminate having one or more plastic films
  • the plastic may include or be formed from one or more polyolefins (eg, high or low density polyethylene or PE) or polypropylene (PP). Furthermore, the plastic
  • Polyvinyl chloride PVC
  • PS polystyrene
  • PC polycarbonate
  • PET polyethylene terephthalate
  • PES Polyethersulfone
  • PEN polyethylene naphthalate
  • the carrier 102 may comprise or be formed of a metal, for example copper, silver, gold, platinum, iron, for example a metal compound, for example steel.
  • the carrier 102 may be opaque, translucent or even transparent.
  • the carrier 102 may be part of or form part of a mirror structure.
  • the carrier 102 may have a mechanically rigid region and / or a mechanically flexible region or be formed in such a way, for example as a foil.
  • the carrier 102 may be formed as a waveguide for electromagnetic radiation, for example, be transparent or translucent with respect to the emitted or
  • the first barrier layer 204 may include or be formed from one of the following materials:
  • Indium zinc oxide aluminum-doped zinc oxide, poly (p-phenylene terephthalamide), nylon 66, and mixtures and
  • the first barrier layer 204 may be formed by means of one of the
  • Atomic layer deposition Atomic Layer Deposition (ALD)
  • ALD Atomic layer deposition
  • PEALD Plasma Enhanced Atomic Layer Deposition
  • PALD Physical Light Deposition
  • PECVD Plasma Enhanced Chemical Vapor Deposition
  • Sublayers all sublayers can be formed by means of a Atom fürabscheidevons.
  • a layer sequence that has only ALD layers can also be referred to as "nanolaminate.”
  • a first barrier layer 204 which has a plurality of
  • Partial layers may have one or more
  • Atomic layer deposition processes are deposited
  • the first barrier layer 204 may have a layer thickness of about 0.1 nm (one atomic layer) to about 1000 nm
  • a layer thickness of about 10 nm to about 100 nm for example, a layer thickness of about 10 nm to about 100 nm according to an embodiment
  • the first barrier layer 204 may be one or more
  • having high refractive index materials for example one or more high refractive index materials, for example having a refractive index of at least 2.
  • Barrier layer 204 may be omitted, for example, in the event that the carrier 102 hermetically sealed
  • the first electrode 204 may be formed as an anode or as a cathode.
  • the first electrode 110 may include or be formed from one of the following electrically conductive material: a metal; a conductive conductive oxide (TCO); a network of metallic
  • Nanowires and particles for example of Ag, which are combined, for example, with conductive polymers; a network of carbon nanotubes that
  • the first electrode 110 made of a metal or a metal may comprise or be formed from one of the following materials: Ag, Pt, Au, Mg, Al, Ba, In, Ca, Sm or Li, as well as compounds, combinations or
  • the first electrode 110 may be one of the following as a transparent conductive oxide
  • zinc oxide for example, zinc oxide, tin oxide, cadmium oxide, titanium oxide, indium oxide, or indium tin oxide (ITO).
  • binary oxide for example, zinc oxide, tin oxide, cadmium oxide, titanium oxide, indium oxide, or indium tin oxide (ITO).
  • binary oxide for example, zinc oxide, tin oxide, cadmium oxide, titanium oxide, indium oxide, or indium tin oxide (ITO).
  • binary oxide for example, zinc oxide, tin oxide, cadmium oxide, titanium oxide, indium oxide, or indium tin oxide (ITO).
  • Metal oxygen compounds such as ZnO, SnO 2, or ⁇ 2 ⁇ 3, also include ternary metal oxygen compounds, for example, AlZnO, Zn 2 SnO 4, CdSnO 3, ZnSnO 3, Mgln 204,
  • Embodiments are used. Farther
  • the TCOs do not necessarily correspond to a stoichiometric composition and can furthermore be p-doped or n-doped, or hole-conducting (p-TCO) or electron-conducting (n-TCO).
  • the first electrode 110 may be a layer or a
  • the first electrode 110 may be formed by a stack of layers of a combination of a layer of a metal on a layer a TCO, or vice versa.
  • An example is one
  • the first electrode 204 may, for example, have a layer thickness in a range of 10 nm to 500 nm,
  • the first electrode 110 may be a first electrical
  • the first electrical potential may be provided by a power source, such as a power source or a voltage source.
  • the first electrical potential can be applied to an electrically conductive carrier 102 and the first electrode 110 can be indirectly electrically supplied by the carrier 102.
  • the first electrical potential may be, for example, the ground potential or another predetermined reference potential.
  • FIG. 2 shows an optoelectronic component 100 having a first organic functional layer structure unit 216 and a second organic functional one
  • Layer structure unit 220 is shown. In various embodiments, the organic functional
  • Layer structure 112 but also more than two organic functional layer structures, for example, 3, 4, 5, 6, 7, 8, 9, 10, or even more, for example 15 or more, for example, 70th
  • Layer structures may be the same or different, for example the same or different
  • the second organic functional layered structure unit 220, or the other organic functional layered structure units may be one of those described below Embodiments of the first organic functional
  • Layer structure unit 216 may be formed.
  • the first organic functional layer structure unit 216 may include a hole injection layer, a
  • an organic functional layer structure unit 112 one or more of said layers may be provided, wherein the same layers may have physical contact, may only be electrically connected to each other or even electrically insulated from each other, for example, may be formed side by side. Individual layers of said layers may be optional.
  • a hole injection layer may be formed on or above the first electrode 110.
  • the hole injection layer may include one or more of the following materials exhibit or can be formed therefrom: HAT-CN, Cu (I) pFBz, MoO x, WO x, VO x, ReO x, F4-TCNQ, NDP-2, NDP-9, Bi (III) pFBz, F16CuPc; NPB ( ⁇ , ⁇ '-bis (naphthalen-1-yl) -N, '-bis (phenyl) -benzidine); beta-NPB N, '-Bis (naphthalen-2-yl) -N,' -bis (phenyl) -benzidine); TPD
  • the hole injection layer may have a layer thickness in a range of about 10 nm to about 1000 nm, for example in a range of about 30 nm to about 300 nm, for example in a range of about 50 nm to about 200 nm.
  • Hole transport layer may be formed.
  • Hole transport layer may comprise or be formed from one or more of the following materials: NPB ( ⁇ , ⁇ '-bis (naphthalen-1-yl) -N, '-bis (phenyl) -benzidine); beta-NPB N, N'-bis (naphthalen-2-yl) -N, '-bis (phenyl) -benzidine); TPD (N, '- bis (3-methylphenyl) - N,' - bis (phenyl) benzidine); Spiro TPD (N, '- bis (3-methylphenyl) - N,' - bis (phenyl) benzidine); Spiro-NPB (N, 'bis (naphthalen-1-yl) -N,' -bis (phenyl) -spiro); DMFL-TPD N, 'bis (3-methylphenyl) -N,' -bis (phenyl) -9, 9-dimethyl-fluorene); DMFL-NP
  • the hole transport layer may have a layer thickness in a range of about 5 nm to about 50 nm,
  • nm for example in a range of about 10 nm to about 30 nm, for example about 20 nm.
  • functional layer structure units 216, 220 may each have one or more emitter layers
  • An emitter layer may include or be formed from organic polymers, organic oligomers, organic monomers, organic small, non-polymeric molecules ("small molecules”), or a combination of these materials.
  • the optoelectronic component 100 can in a
  • Emitter layer comprise or be formed from one or more of the following materials: organic or
  • organometallic compounds such as derivatives of polyfluorene, polythiophene and polyphenylene (for example 2- or 2,5-substituted poly-p-phenylenevinylene) and metal complexes, for example iridium complexes such as blue-phosphorescent FIrPic (bis (3,5-difluoro-2- (bis 2-pyridyl) phenyl- (2-carboxypyridyl) -iridium III), green phosphorescent
  • non-polymeric emitters can be deposited by means of thermal evaporation, for example. Furthermore, can
  • Polymer emitter are used, which can be deposited, for example by means of a wet chemical process, such as a spin-on process (also referred to as spin coating).
  • a wet chemical process such as a spin-on process (also referred to as spin coating).
  • the emitter materials may be suitably embedded in a matrix material, for example one
  • Emitter layer have a layer thickness in a range of about 5 nm to about 50 nm, for example in a range of about 10 nm to about 30 nm, for example about 20 nm.
  • the emitter layer may have single-color or different-colored (for example blue and yellow or blue, green and red) emitting emitter materials.
  • the emitter layer may have single-color or different-colored (for example blue and yellow or blue, green and red) emitting emitter materials.
  • Emitter layer have multiple sub-layers that emit light of different colors. By mixing the different colors, the emission of light can result in a white color impression.
  • it can also be provided to arrange a converter material in the beam path of the primary emission generated by these layers, which at least partially absorbs the primary radiation and emits secondary radiation of a different wavelength, so that from a (not yet white) primary radiation by the combination of primary radiation and secondary Radiation produces a white color impression.
  • the organic functional layer structure unit 216 may include one or more emitter layers configured as a hole transport layer. Furthermore, the organic functional layer structure unit 216 may include one or more emitter layers configured as an electron transport layer.
  • Be formed electron transport layer for example, be deposited.
  • the electron transport layer may include or be formed from one or more of the following materials: NET-18; 2, 2 ', 2 "- (1,3,5-benzene triyl) tris (1-phenyl-1H-benzimidazoles); 2- (4-biphenylyl) -5- (4-tert-butylphenyl) -1,3 , 4-oxadiazoles, 2, 9-dimethyl-4,7-diphenyl-l, 10-phenanthroline (BCP), 8-hydroxyquinolinolato-lithium, 4- (naphthalen-1-yl) -3, 5-diphenyl-4H- l, 2, 4-triazoles; 1, 3-bis [2- (2,2'-bipyridine-6-yl) -1,3,4-oxadiazo-5-yl] benzene; 4,7-diphenyl-1 , 10-phenanthrolines (BPhen); 3- (4-biphenylyl) -4-phenyl-5-tert-butylphenyl-1
  • the electron transport layer may have a layer thickness
  • nm in a range of about 5 nm to about 50 nm, for example, in a range of about 10 nm to about 30 nm, for example about 20 nm.
  • the electron transport layer may be a
  • Electron injection layer may be formed.
  • Electron injection layer may include or may be formed of one or more of the following materials: NDN-26, MgAg, CS2CO3, CS3PO4, Na, Ca, K, Mg, Cs, Li, LiF;
  • the electron injection layer may have a layer thickness in a range of about 5 nm to about 200 nm, for example in a range of about 20 nm to about 50 nm, for example about 30 nm.
  • the second organic functional layer structure unit 220 may be formed above or next to the first functional layer structure units 216. Electrically between the organic functional
  • Layer structure units 216, 220 may be a
  • Interlayer structure 218 may be formed.
  • Interlayer structure 218 may be formed as an intermediate electrode 218, for example according to one of
  • Intermediate electrode 218 may be electrically connected to an external voltage source.
  • the external voltage source may provide, for example, a third electrical potential at the intermediate electrode 218.
  • the intermediate electrode 218 may also have no external electrical connection, for example by the intermediate electrode having a floating electrical potential.
  • Interlayer structure 218 may be formed as a charge generation layer structure 218 (CGL).
  • a charge carrier pair generation layer structure 218 may include one or more
  • the charge carrier pair generation layer (s) and the hole-conducting charge carrier pair generation layer (s) may each be formed of an intrinsically conductive substance or a dopant in a matrix.
  • the carrier pair generation layer pattern 218 should be designed with respect to the energy levels of the electron-conducting charge carrier pair generation layer (s) and the hole-conducting charge carrier pair generation layer (s) such that at the Interface of an electron-conducting charge carrier pair generation layer with a hole-conducting charge carrier pair generation layer can be a separation of electron and hole.
  • the carrier pair generation layer structure 218 may further include a layer between adjacent layers
  • Each organic functional layer structure unit 216, 220 may for example have a layer thickness of at most approximately 3 ⁇ m, for example a layer thickness of at most approximately 1 ⁇ m, for example a layer thickness of approximately approximately 300 nm.
  • the optoelectronic component 100 can optionally have further organic functional layers, for example arranged on or above the one or more
  • the further organic functional layers can be, for example, internal or external coupling / decoupling structures, which are the
  • the second electrode 114 may be formed.
  • the second electrode 114 may be formed according to any one of the configurations of the first electrode 110, wherein the first electrode 110 and the second electrode 114 may be the same or different.
  • the second electrode 114 may be formed as an anode, that is, as a hole-injecting electrode or as a cathode, that is as a
  • the second electrode 114 may have a second electrical connection to which a second electrical connection
  • the second electrical potential can be applied.
  • the second electrical potential may be from the same or another source of energy
  • the second electrical potential may be provided as the first electrical potential and / or the optional third electrical potential.
  • the second electrical potential may be different from the first electrical potential and / or the optionally third electrical potential.
  • the second electrical potential may, for example, have a value such that the
  • Difference from the first electrical potential has a value in a range of about 1.5 V to about 20 V, for example, a value in a range of about 2.5 V to about 15 V, for example, a value in a range of about 3 V. up to about 12 V.
  • the second barrier layer 208 may be formed on the second electrode 114.
  • the second barrier layer 208 may also be referred to as
  • TFE Thin film encapsulation
  • the second barrier layer 208 may be formed according to one of the embodiments of the first barrier layer 204.
  • Barrier layer 208 can be dispensed with.
  • the optoelectronic component 100 may, for example, have a further encapsulation structure, as a result of which a second barrier layer 208 may become optional, for example a cover 224, for example one
  • Cavity glass encapsulation or metallic encapsulation Furthermore, in various embodiments
  • one or more input / output coupling layers may be formed in the optoelectronic component 100, for example an external outcoupling foil on or above it Carrier 102 (not shown) or an internal one
  • Decoupling layer (not shown) in the layer cross section of the optoelectronic component 100.
  • the input / output coupling layer can be a matrix and distributed therein
  • one or more antireflection coatings for example, one or more antireflection coatings
  • a conclusive one may be on or above the second barrier layer 208
  • Bonding layer 222 may be provided, for example, an adhesive or a paint.
  • a cover 224 on the second barrier layer 208 can be connected conclusively, for example by being glued on.
  • transparent material can be particles
  • the coherent bonding layer 222 can act as a scattering layer and improve the color angle distortion and the
  • dielectric As light-scattering particles, dielectric
  • Metal oxide such as silicon oxide (S1O2), zinc oxide (ZnO), zirconium oxide (Zr02), indium tin oxide (ITO) or indium zinc oxide (IZO), gallium (GA 20 x) aluminum oxide, or titanium oxide.
  • Other particles may also be suitable as long as they have a refractive index that is different from the effective refractive index of the matrix of the coherent bonding layer 222, for example air bubbles, acrylate, or Hollow glass spheres.
  • metallic nanoparticles, metals such as gold, silver, iron nanoparticles, or the like may be provided as light-scattering particles.
  • the coherent bonding layer 222 may have a layer thickness of greater than 1 ym, for example one
  • the interlocking tie layer 222 may include or be a lamination adhesive.
  • the coherent connection layer 222 may be so
  • Such an adhesive may, for example, be a low-refractive adhesive such as an acrylate having a refractive index of about 1.3. However, the adhesive may also be a high refractive adhesive, for example
  • a plurality of different adhesives may be provided which form an adhesive layer sequence.
  • an electrically insulating layer (not limited to, a first electrically insulating layer, a second electrode 114 and a third electrically insulating layer (not a third electrically insulating layer (not a third electrically insulating layer).
  • SiN for example, having a layer thickness in a range of about 300 nm to about 1.5 ym, for example, having a layer thickness in a range of about 500 nm to about 1 ym to electrically unstable materials
  • a cohesive tie layer 222 may be optional, for example, if the cover 224 is formed directly on the second barrier layer 208, such as a glass cover 224 formed by plasma spraying.
  • the electrically active region 206 may also be a so-called getter layer or getter structure,
  • a laterally structured getter layer may be arranged (not shown).
  • the getter layer may include or be formed of a material that absorbs and binds substances that are detrimental to the electrically active region 206.
  • a getter layer may include or be formed from a zeolite derivative. The getter layer can
  • the getter layer may have a layer thickness of greater than about 1 ⁇ m, for example a layer thickness of several ym.
  • the getter layer may include a lamination adhesive or may be embedded in the interlocking tie layer 222.
  • a cover 224 may be formed on or above the coherent connection layer 222.
  • the cover 224 can be connected to the electrically active region 206 by means of the coherent connection layer 222 and protect it from harmful substances.
  • the cover 224 may include, for example, a glass cover 224, a
  • the glass cover 224 for example, by means of a frit connection (engl. glass frit bonding / glass soldering / seal glass bonding) by means of a conventional glass solder in the geometric edge regions of the organic optoelectronic component 100 with the second barrier layer 208 and the electrically active region 206 are connected conclusively.
  • the cover 224 and / or the integral interconnect layer 222 may have a refractive index (for example, at a wavelength of 633 nm) of 1.55.
  • Device 100 comprises a control device 302 - illustrated as equivalent circuit diagrams for a
  • Controller 302 may be configured by means of a power supply 304 to apply a first electrical current (having a first current and a first voltage) to first electrode region 110A and / or a second one
  • the power supply 304 may be configured to provide a different electrical current to the first electrode region 110A than to the second electrode region HOB. For example, the
  • Power supply 304 for the first electrode portion 110A independently of the second electrode region HOB be controlled, for example, electrically isolated from each other
  • Power supply 304 a first power supply 304A and at least one second power supply 304B, wherein the second power supply 304A may be electrically isolated from the first power supply.
  • Electrode region 114 several independently
  • first electrode region 110 with four electrode regions 110A-D; and / or, for example, a first electrode region 110 with two electrode regions 110A, B and a second
  • An electrode 110 having three or more electrode regions may comprise a plurality of structures 132A-C as described
  • Embodiments have.
  • the power supply 304 can analogously to the description of Figure 3B several independent
  • control device may be configured to change the first electric current and / or the second electric current such that the total emission of the electromagnetic radiation is variable over time.
  • the controller 302 may include an electrical memory by means of which a map for controlling the first electric current and the second electric current is stored.
  • the control device may have an input terminal by means of which a plan for controlling the first electric current and the second electric current can be input.
  • the control device 302 may be configured such that the first electric current and / or the second electric current is a direct current and / or an alternating current
  • the control device may be configured such that the first electric current and the second electric current are in at least one of the following characteristics
  • Pulse width the duty cycle; the pulse shape; and / or the number of pulses per sample interval.
  • the controller 302 may be configured such that changing the first electric current is forming a reverse voltage across the first electrode region 110A and the second electrode 114 and / or across the second electrode region HOB and the second electrode 114
  • the control device 302 may be configured such that the changing of the first electric current and / or the second electric current has a pulse modulation, for example a pulse width modulation
  • the control device 302 may be configured such that the first electric current and / or the second electric current are / is changed such that the color location, the brightness and / or the color saturation of the emitted
  • optoelectronic component is temporally variable.
  • a method 400 for operating an optoelectronic device described above is provided.
  • the method may include providing 402 (illustrated in FIG. 4A) a first electrical current 412
  • the first electrical current 412 and / or the second electrical current 414 may comprise current pulses 434, 438.
  • Component 100 may be described with a characteristic r, with:
  • the unit of r is Qcm.
  • the quantity r describes the differential electric
  • an optoelectronic component 100 with a specific optically active surface Resistance of an optoelectronic component 100 with a specific optically active surface.
  • An increase in the area of the optoelectronic component can correspond to a parallel connection of resistors, in which the reciprocal values of the electrical resistances add up.
  • device 100 may be a reference device having an organic functional layer structure
  • optoelectronic component 100 matches, but has the smallest possible optically active surface. In the thermally steady state can by means of the
  • Reference component dV / dj be determined at the operating point r to be determined.
  • the thermally steady state is, for example, after an operating time of
  • an operating point r can be chosen such that: 0.75 -S U -S 1, with
  • strip OLEDs are considered. compare to
  • Relationships underlying analytical model describes the behavior of the organic light-emitting device with sufficient accuracy.
  • the quantity ⁇ denotes a characteristic length resulting from the sheet resistance R of the first electrode 110 and the operating point r.
  • Operating conditions at the second operating point r ⁇ 2 U is about 0.8. In the second operating point the voltage drop is over the luminous area is significantly higher than at the first operating point, so that in the second operating point a stronger
  • Luminance gradient can be achieved.
  • r it can be achieved that an acceptable homogeneity of the luminance in one direction is achieved via the optically active surface, for example via the luminous surface of an organic light-emitting component, while at the same time
  • Luminance gradient is achieved in a different direction.
  • the optoelectronic component 100 can be operated with a first current 412 from the first electrode area 110A to the second electrode 114 and a second current 414 from the second electrode area to the second electrode 114, such that the current density averaged over the luminous area in the first electrode area 110A other than in the second electrode area HOB.
  • the optoelectronic component 110 can thus with
  • the method may include changing 404 the first electric current 412 and / or the second electric current 414 such that the total emission 416 of the electromagnetic radiation is time-variable.
  • the total emission may be on the luminance, the color location, the brightness, the color saturation, the luminance gradient and / or a polarization of the emitted
  • Electric power 414 may include a DC and / or an AC, such as one
  • Electrode region and / or the second electrode region are biased.
  • the first electrical current 412 and the second electrical current 414 may be in at least one of the following
  • the changing 404 of the first electric current 412 and / or the second electric current 414 have a pulse modulation, for example a pulse width modulation, a pulse frequency modulation and / or a
  • Electrode area HOB can be controlled such that in the operating time 408 at least the first
  • Electrode area 110A is energized (illustrated in Figure 4B by the reference numeral 422), at least the second electrode region HOB is energized (illustrated in Figure 4B by the reference numeral 424) or the first
  • Electrode area 110A and the second electrode area HOB are energized simultaneously (illustrated in Figure 4B by the reference numeral 426).
  • Electric current 414 can be changed such that the color locus of the emitted electromagnetic radiation locally from the optoelectronic component 100 in time
  • the first electric current 412 and / or the second electric current 414 may be changed such that the brightness of the emitted
  • the optoelectronic component 100 is temporally variable.
  • Electric currents 414 may be changed such that the color saturation of the emitted electromagnetic radiation is locally variable in time by the optoelectronic component 100.
  • Electrode areas 110A, HOB at a same
  • Luminance gradients can be the operating current and thus the associated averaged over the luminous area
  • Operating current density can be modulated by means of pulse width modulation (PWM), wherein the pulse length, pulse shape and / or the pulse height or pulse amplitude can be varied.
  • PWM pulse width modulation
  • Electrode portion 110A and second electrode area HOB average operating current density can be varied.
  • Operating current density j be varied with j ⁇ l - j - jA2.
  • the luminance gradient on the luminous area can be varied.
  • Luminance gradients in the luminous area lead.
  • the first electric current 412 and / or the second electric current 414 the brightness of the luminous area can be independent of
  • Luminance gradients are changed. Furthermore, in the operation of the optoelectronic component 100, the intensity of the luminance gradient can also be modulated, while the total luminance of the luminous flux of the
  • Luminous surface radiated light is kept constant.
  • the overall brightness of an organic light emitting device 100 can be kept constant while the intensity of the luminance gradient over the
  • Luminous surface varies or is modulated. This can be achieved by, for example, choosing the first operating point r 1 i such that a more pronounced
  • Luminance gradient is present, and the optoelectronic
  • Device 100 is operated with a pulsed first electrical current 412 and / or a pulsed second electrical current 414 with an operating current density amplitude
  • the first electrical current 412 and the second electrical current 414 may be the same or different
  • Current 414 may be the magnitude of the luminance gradient be varied.
  • Electricity 414 can reduce the brightness of the
  • Luminous surface and the luminance gradient in the luminous area in the region of the first electrode region 110A and the second electrode region HOB be changed independently.
  • the individual pulses of the first electric current 412 and of the second electric current 414 can have a non-linear relationship such that a pattern to be displayed can be represented by means of a sequence of pulses and the optical superimposition of the individual pulses.
  • the organic functional layer structure can be designed such that, in addition to a variation of the luminance gradient, a variation of a
  • Color gradients can be achieved over the illuminated area.
  • inhomogeneous patterns can be represented, for example in the case of complex-shaped organic light-emitting diodes.
  • Optoelectronic component and a method for operating an optoelectronic component provided, with which it is possible to represent time variable different homogeneous or deliberately inhomogeneous luminance distributions that would not be reproduced without this method, for example.
  • the method allows with relatively little effort to provide extremely many, different luminance distributions and time sequences thereof.
  • the respective pulse coefficients for example
  • Pulse width modulation coefficients are calculated, with which the desired luminance distribution can be modeled. Furthermore, an inhomogeneous component can be homogenized thereby and by means of the complex geometry of the component with relatively little effort. By means of a central contacting of a flat component, the center of the component can also be controlled by the method described above.

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  • Electroluminescent Light Sources (AREA)

Abstract

Dans différents exemples de réalisation, l'invention concerne un composant optoélectronique (100) qui comprend une première électrode (110), une deuxième électrode (114), une structure fonctionnelle organique stratifiée (112). La structure fonctionnelle organique stratifiée (112) est formée entre la première électrode (110) et la deuxième électrode (114) et elle est adaptée pour convertir un courant électrique en un rayonnement électromagnétique et pour émettre ce dernier. Au moins la première électrode (110) comporte au moins une première zone d'électrode (110A) et une deuxième zone d'électrode (110B). un dispositif de commande (302) est adapté pour fournir (402) au moins un premier courant électrique (412) dans la première zone d'électrode (110A) et/ou au moins un deuxième courant électrique dans la deuxième zone d'électrode (110B), le premier courant électrique (412) et/ou le deuxième courant électrique (514) comprenant des impulsions de courant (434, 438), et pour faire varier (404) le premier courant électrique (412) et/ou le deuxième courant électrique (414) de telle façon que l'émission totale (416) du rayonnement électromagnétique est variable dans le temps.
PCT/EP2014/072173 2013-10-29 2014-10-16 Composant optoélectronique et procédé pour faire fonctionner un composant optoélectronique WO2015062866A1 (fr)

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Citations (2)

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Publication number Priority date Publication date Assignee Title
WO2008040318A1 (fr) * 2006-09-29 2008-04-10 Osram Opto Semiconductors Gmbh Composant organique électroluminescent, dispositif doté d'un tel composant, dispositif d'éclairage et dispositif d'affichage
EP2234458A1 (fr) * 2009-03-26 2010-09-29 Panasonic Electric Works Co., Ltd. Procédé d'alimentation en énergie électrique d'un élément électroluminescent planaire

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US20060086020A1 (en) * 2004-10-27 2006-04-27 Eastman Kodak Company Multi-mode flat-panel light-emitting sign
DE112009003123B4 (de) * 2008-12-11 2020-02-06 Osram Oled Gmbh Organische leuchtdiode und beleuchtungsmittel

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008040318A1 (fr) * 2006-09-29 2008-04-10 Osram Opto Semiconductors Gmbh Composant organique électroluminescent, dispositif doté d'un tel composant, dispositif d'éclairage et dispositif d'affichage
EP2234458A1 (fr) * 2009-03-26 2010-09-29 Panasonic Electric Works Co., Ltd. Procédé d'alimentation en énergie électrique d'un élément électroluminescent planaire

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