WO2015011047A1 - Procédé permettant de produire un dispositif à composants électronique et dispositif à composants électronique - Google Patents

Procédé permettant de produire un dispositif à composants électronique et dispositif à composants électronique Download PDF

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Publication number
WO2015011047A1
WO2015011047A1 PCT/EP2014/065506 EP2014065506W WO2015011047A1 WO 2015011047 A1 WO2015011047 A1 WO 2015011047A1 EP 2014065506 W EP2014065506 W EP 2014065506W WO 2015011047 A1 WO2015011047 A1 WO 2015011047A1
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Prior art keywords
thermoelectric
component
layer
optoelectronic component
optoelectronic
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PCT/EP2014/065506
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German (de)
English (en)
Inventor
Thilo Reusch
Thomas Wehlus
Original Assignee
Osram Oled Gmbh
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Publication of WO2015011047A1 publication Critical patent/WO2015011047A1/fr

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations

Definitions

  • a method for manufacturing an electronic component device and an electronic component device are provided.
  • OLEDs organic light-emitting diodes
  • a conventional method for measuring the temperature of an OLED has the attachment of temperature sensors on the
  • Measuring method only the temperature at the surface of the OLED can be determined.
  • an electronic component device and a method for the production thereof are provided with which it is possible to precisely determine the temperature distribution of an OLED.
  • a method of manufacturing an electronic component device comprising: forming an optoelectronic device on or over a carrier; Forming a thermoelectric device on or over the same carrier; wherein forming the optoelectronic device and / or the thermoelectric device comprises applying layers to the carrier; the
  • thermoelectric device a thermoelectric
  • thermoelectrically sensitive portion is formed in thermal contact with the optoelectronic device; the thermoelectrically sensitive section is not self-supporting; and
  • Section of the thermoelectric device is involved in forming the optoelectronic component.
  • the formation of the optoelectronic component device may comprise a process from the group of processes: structuring of layers by means of shadow masks during the formation of the
  • thermoelectrically sensitive portion of the thermoelectric component can be formed before and / or after the formation of the optoelectronic component.
  • thermoelectrically sensitive portion prior to forming the optoelectronic device
  • thermoelectrically sensitive section which after forming the optoelectronic
  • Component can be formed, for example, on the optoelectronic device, for example on the Encapsulation of the optoelectronic component to be formed.
  • thermoelectric sensitive section of the thermoelectric device simultaneously with layers of the
  • thermoelectric component can be formed.
  • optoelectronic component can be formed.
  • a simultaneous formation of layers of the thermoelectric component and the optoelectronic component can be realized, for example, by applying a layer to the surface of the support, wherein the
  • thermoelectric device and the optoelectronic
  • Component be formed on different areas of the surface of the carrier. That making the
  • Thermoelectric component is integrated into the production of the optoelectronic component.
  • thermoelectrically sensitive portion by means of a non-structuring of a portion of the layers of the optoelectronic
  • non-patterning may include not removing or forming layers or regions of layers.
  • thermoelectric sensitive portion as a layer or layer structure of the optoelectronic component
  • thermoelectrically sensitive portion in the region of the optoelectronic component for example, as electrical transport layers in
  • Transport layer may be increased to contact the thermoelectrically sensitive region geometrically beyond the dimension of the optoelectronic device addition.
  • thermoelectrically sensitive portion with a same or similar material composition; or an identical or similar material composition and a same or similar layer thickness; be formed as at least one layer of the optoelectronic
  • thermoelectrically sensitive section should have at most one common electrode of the
  • thermoelectric voltage of the thermoelectric component for example, grounding, i. the crowd. Otherwise, a simultaneous energizing of the optoelectronic component and a readout of the thermoelectric voltage of the
  • Thermoelectric device may not be possible.
  • Component device may be formed such that in addition to the thermoelectric device and the optoelectronic device further thermoelectric
  • thermoelectrically sensitive sections and / or optoelectronic components are formed on or above the carrier.
  • Sections are also referred to below as second components or second sections.
  • thermoelectric components In yet another embodiment of the method, the two or more thermoelectric components and / or
  • thermoelectric sensitive sections regularly or sparsely distributed on or over the carrier are formed.
  • a regular arrangement of the thermoelectric components and / or thermoelectrically sensitive portions may be formed, for example, on the surface of the carrier at a uniform distance from each other.
  • An isolated arrangement of the thermoelectric components and / or thermoelectrically sensitive sections can be used.
  • geometric edge may be formed on the surface of the carrier.
  • thermoelectric device in addition to the thermoelectric device or to the thermoelectric device
  • thermoelectric sensitive section at least one further thermoelectric device and / or another
  • Thermoelectrically sensitive portion to be formed thermally coupled to the optoelectronic device.
  • thermoelectric components a plurality of thermoelectric components and / or
  • Thermoelectrically sensitive portions are formed at different areas of the optoelectronic component. As a result, for example, the temperature of an optoelectronic component at different
  • Areas are measured.
  • the different regions can be arranged in one plane or offset from each other. In a staggered arrangement, a
  • thermoelectric device for example, measure the temperature at the surface of the carrier or the optoelectronic device, i. in the plane parallel to
  • thermoelectric component could additionally measure the temperature cross section of the optoelectronic component.
  • thermoelectric components are formed adjacent to or on the thermoelectric device.
  • Thermoelectrically sensitive portion are formed such that the optoelectronic component is partially or completely surrounded by the thermoelectric sensitive portion.
  • thermoelectrically sensitive portion are formed on the support such that the thermoelectrically sensitive
  • Section is partially or completely a part of the support for the optoelectronic device.
  • thermoelectrically sensitive portion are formed on the support such that the thermoelectric device partially or completely next to the optoelectronic
  • Component is formed.
  • Thermoelectric device are formed such that at least two optoelectronic devices a
  • thermoelectric sensitive section for example, if two or more optoelectronic
  • thermoelectric device Components are formed on or over a thermoelectric device.
  • thermoelectric device are formed such that individual layers of the thermoelectric device are formed in homogeneous, with a homogeneous
  • thermoelectric device as a temperature-measuring
  • thermoelectric device having a voltage measuring device, wherein the voltage measuring device has a
  • thermoelectrically sensitive portion wherein the thermoelectrically sensitive portion is formed on or above the support similar or equal to the thermoelectric sensitive portion of the voltage measuring device.
  • thermoelectrically sensitive section of the thermoelectrically sensitive section of the thermoelectrically sensitive section
  • thermoelectric measuring device be designed such that the thermoelectric properties of the electrical connection of the thermoelectric sensitive section on or above the carrier thermoelectric in the course or electrical path to the thermoelectric sensitive portion of
  • thermoelectrically sensitive section As a result, the influence of the electrical connections of the thermoelectrically sensitive section can be taken into account when measuring the thermoelectric voltage of the thermoelectrically sensitive section on or above the carrier, for example the electrical connections or contacts of the thermoelectrically sensitive section with a voltmeter. As a result, for example, only the thermoelectric voltage of the thermal sensitive area can be measured on or above the carrier.
  • thermoelectrically sensitive portion on or above the support as a layer structure with layers having different thermoelectric properties are formed such that forms a thermoelectric voltage at the common interface of two layers having different thermoelectric properties, wherein the layers are arranged with different thermoelectric properties such that the thermoelectrically sensitive Section a resulting thermoelectric voltage is applied.
  • the size of the common boundary surface of the layers having different thermoelectric properties can be formed such that the thermoelectric voltage of the thermoelectrically sensitive section has a value which is at least approximately 50 times higher than the thermoelectric voltage of further layers in the electrical path of the
  • thermoelectric component The higher thermoelectric voltage value of the thermoelectrically sensitive portion than the other layers can be understood as a high signal-to-noise ratio.
  • a high signal-to-noise ratio for example, in a range of about 1000: 1 to about 50: 1, the deviation of the measured values of successive temperature measurements at a constant temperature may be in a range of about 0.1% to about 2%, for example be.
  • a high signal-to-noise ratio may allow for a low temperature variance in the measurements, i. a
  • Interface of the thermoelectric sensitive section may be dependent on the substances between which a
  • thermoelectric voltage is formed, the measuring device for measuring voltage, for example, the input resistance, i. the impedance. Furthermore, the type of contacting the thermoelectric sensitive sections with the
  • a contact can be formed, for example, as a cohesive contact or a positive contact. Furthermore, the thermal and
  • the temperature is averaged over the amount of the interface, ie at a temperature distribution in or on the OLED should the amount of the interface and / or the shape of the Boundary surface and / or the position of the interface with respect to further layers are chosen such that the
  • Temperature difference of the temperature distribution is formed below the measurement accuracy and / or matching accuracy of the electronic component device.
  • the shape of the common interface of the layers having different thermoelectric properties may have a geometric shape from the group of geometric shapes: circle, ring, rectangle, square, polygon or the like.
  • Thermoelectrically sensitive section are formed as a thermocouple, from the group of thermocouples: type K, J, N, R, S, T, E, Chromel / AuFe, and the tolerance classes 1 or 2.
  • thermocouples or the layers with different thermoelectric properties for example
  • Boundary surfaces can form a thermoelectric voltage, a substance or mixture, such as an alloy, have or be formed from the group of substances: chromium, aluminum, nickel, manganese, silicon,
  • thermoelectric sensitive section with different thermoelectric properties and common interface are formed side by side or one above the other.
  • thermoelectric device can be formed such that the thermoelectric voltage of the thermoelectric sensitive section to the geometric edge of the thermoelectric sensitive section
  • thermoelectric device are formed such that a thermoelectric voltage is converted into a temperature value.
  • Component device may be formed such that the temperature value by means of the thermoelectric voltage of the thermoelectric device for controlling the
  • Optoelectronic device changed to an optoelectronic target property out.
  • the target property may be a fixed color mixture or a defined intensity of emitted electromagnetic radiation.
  • Individual optoelectronic components can by means of
  • organic functional layer structure have different temperatures, for example on the surface or in the layer cross-section. This can lead to deviations of the optoelectronic properties of individual
  • Optoelectronic devices come from an optoelectronic target property.
  • Components can be designed such that
  • the individual response voltage can be adjusted based on the measured temperature of the individual optoelectronic component.
  • Optoelectronic device with optically active region as an electromagnetic radiation emitting device, such as an organic light emitting diode or laser diode, or as an electromagnetic radiation absorbing device, such as an organic solar cell or a photodetector, are formed.
  • an electromagnetic radiation emitting device such as an organic light emitting diode or laser diode
  • an electromagnetic radiation absorbing device such as an organic solar cell or a photodetector
  • thermoelectric component device as a temperature-controlled optoelectronic device, such as temperature-controlled organic light-emitting diode, are formed.
  • an electronic component device comprising: a carrier; one
  • thermoelectric component on or above a carrier
  • thermoelectric component comprising: a first electrode; a second electrode; an optically active region in the current path between the first electrode and the second electrode; an encapsulation; wherein the thermoelectric component has a thermoelectrically sensitive section, wherein the thermoelectrically sensitive section has at least two thermoelectric layers, wherein the at least two thermoelectric layers are in at least one thermoelectric properties
  • thermoelectric
  • thermoelectric device in physical contact with at least a portion of the thermoelectric device
  • thermoelectric sensitive section of the thermoelectric sensitive section of the thermoelectric sensitive section
  • thermoelectrically sensitive section of the thermoelectric component may be formed next to the optoelectronic component.
  • thermoelectrically sensitive section may be formed as a non-structured region of optoelectronic component.
  • thermoelectric sensitive section of an identical or similar material composition or an identical or similar material composition and an identical or similar layer thickness; such as at least one layer of the optoelectronic component.
  • thermoelectric device be configured such that the thermoelectric device and the optoelectronic component have a common electrode.
  • the component device can have, in addition to the thermoelectric component and the optoelectronic component, further thermoelectric components and / or thermoelectrically sensitive portions and / or optoelectronic components on or above the carrier.
  • thermoelectric components and / or thermoelectrically sensitive portions may be regularly or individually distributed on or over the carrier.
  • thermoelectric device or thermoelectric
  • thermoelectric device or another Thermoelectrically sensitive portion of the thermoelectric device may be thermally coupled to the optoelectronic component.
  • thermoelectric components and / or thermoelectrically sensitive portions may be formed on different areas of the optoelectronic component.
  • thermoelectric devices thermoelectric devices or thermoelectric
  • thermoelectric device may be formed adjacent to or on the thermoelectric device.
  • thermoelectrically sensitive section can be designed such that the optoelectronic component is partially or completely surrounded by at least the thermoelectrically sensitive section.
  • thermoelectrically sensitive portion may be formed on the support such that the thermoelectrically sensitive portion is partially or completely formed as a part of the support for the
  • thermoelectrically sensitive section can be partially or completely formed next to the optoelectronic component.
  • thermoelectrically sensitive portion may be formed as a layer of the optoelectronic component.
  • thermoelectric thermoelectric
  • Component be designed such that at least two Optoelectronic devices a common
  • thermoelectrically sensitive section have thermoelectrically sensitive section.
  • thermoelectric thermoelectric
  • Component be designed such that individual layers of the thermoelectric device in itself homogeneous
  • thermoelectric interfaces are formed, wherein a homogeneously formed layer has no inner thermoelectric interfaces.
  • thermoelectric thermoelectric
  • Component be set up as a temperature-measuring device.
  • thermoelectric thermoelectric
  • thermoelectrically sensitive section of the voltage measuring device can be designed such that the thermoelectric properties in the course or electrical path of the electrical connection of the thermoelectrically sensitive section on or above the carrier with the voltage measuring device thermoelectrically at the second thermoelectric sensitive section is measured. In other words, thermoelectric voltages do not compensate each other in the course or electrical path, but are measurable.
  • thermoelectric thermoelectric
  • thermoelectric properties as a layer structure with layers with different thermoelectric properties
  • thermoelectric sensitive section whereby the layers with different thermoelectric properties are arranged such that above the thermoelectric sensitive section a
  • thermoelectric voltage is applied.
  • the size of the common interface of the layers may be different
  • thermoelectric properties such that the thermoelectric voltage of the thermoelectric sensitive portion has a value which is at least about 50 times higher than the thermoelectric voltage of other layers in the electrical path of the
  • thermoelectric component thermoelectric component
  • the shape of the common interface of the layers may be different
  • thermoelectric properties have a geometric shape from the group of geometric shapes: circle, ring, rectangle, square, polygon or the like.
  • thermoelectrically sensitive section may be formed as a thermocouple from the group of thermocouples: Type K, J, N, R, S,
  • thermoelectric section with different
  • thermoelectric properties and common interface may be formed side by side or one above the other.
  • thermoelectric thermoelectric
  • Component be designed such that the
  • thermoelectric voltage of the thermoelectric sensitive portion is moved to the geometric edge of the electronic component device.
  • thermoelectric voltage of the thermoelectric sensitive section is converted into a temperature value
  • a display component for example by means of a display component.
  • thermoelectric Device be configured such that the temperature value by means of the thermoelectric voltage of the thermoelectric device for controlling the
  • Optoelectronic device changed to an optoelectronic target property out.
  • Component as electromagnetic radiation emitting device such as an organic light emitting diode, be set up.
  • optoelectronic component for example a
  • Figure 1 is a schematic cross-sectional view of a
  • Figure 2 is a schematic cross-sectional view of a concrete
  • FIG. 1 Embodiment of an optoelectronic component
  • Figure 3 is a schematic cross-sectional view of a specific embodiment of a temperature measuring device, according to various embodiments.
  • an inorganic substance may be one in a chemically uniform form, regardless of the particular state of matter
  • an organic-inorganic substance can be a
  • the term "substance” encompasses all of the abovementioned substances, for example an organic substance, an inorganic substance, and / or a hybrid substance
  • a mixture of substances can be understood to mean components of two or more different substances whose
  • components are very finely divided.
  • a class of substance is a substance or mixture of one or more organic substance (s), one or more inorganic substance (s) or one or more hybrid
  • an electrical component can be understood as meaning a component which can form a current of charged elementary particles by means of an electrical potential difference.
  • Thermoelectric device to be understood as a component which by means of a temperature difference, an electrical potential difference or by means of a
  • electrical potential difference can form a temperature difference, the potential difference to a
  • an electronic component can be understood as a component which controls, controls or amplifies an electrical component
  • Optoelectronic component to be understood as a device that by means of a semiconductor device
  • Fig.l shows a schematic cross-sectional view of an optoelectronic component, according to various
  • the light emitting device 100 in the form of a
  • Organic light emitting diode 100 may include a carrier 102.
  • the carrier 102 may be used, for example, as a support for electronic elements or layers, for example
  • the carrier 102 may include or be formed from glass, quartz, and / or a semiconductor material or any other suitable material.
  • the carrier 102 may be a Plastic film or a laminate with one or more plastic films or be formed from it.
  • the plastic may be one or more polyolefins (eg, high or low density polyethylene (PE) or
  • the plastic may be polyvinyl chloride (PVC), polystyrene (PS), polyester and / or polycarbonate (PC),
  • PVC polyvinyl chloride
  • PS polystyrene
  • PC polycarbonate
  • the carrier 102 may be one or more of the above
  • the carrier 102 may be translucent or even transparent.
  • translucent or “translucent layer” can be understood in various embodiments that a layer is permeable to light
  • the light generated by the light emitting device for example one or more
  • Wavelength ranges for example, for light in one
  • Wavelength range of the visible light for example, at least in a partial region of the wavelength range of 380 nm to 780 nm.
  • the term "translucent layer” in various embodiments is to be understood to mean that substantially all of them are in one
  • Quantity of light is also coupled out of the structure (for example, layer), wherein part of the light can be scattered here.
  • the term "transparent” or “transparent layer” can be understood to mean that a layer is permeable to light
  • a structure for example a layer
  • the structure for example layer
  • the optically translucent layer structure at least in a partial region of the wavelength range of the desired monochrome light or for the limited
  • the organic light emitting diode 100 (or else the light emitting devices according to the above or hereinafter described
  • Embodiments may be configured as a so-called top and bottom emitter.
  • a top and / or bottom emitter can also be used as an optically transparent component,
  • a transparent organic light emitting diode are formed.
  • the carrier 102 may be in different
  • Embodiments optionally be arranged a barrier layer 104.
  • the barrier layer 104 may include or consist of one or more of the following: alumina, zinc oxide, zirconia, titania,
  • Indium zinc oxide aluminum-doped zinc oxide, as well
  • the barrier layer 104 in various embodiments have a layer thickness in a range of about 0.1 nm (one atomic layer) to about 5000 nm, for example, a layer thickness in a range of about 10 nm to about 200 nm, for example, a layer thickness of about 40 nm.
  • an electrically active region 106 of the light-emitting component 100 may be arranged.
  • the electrically active region 106 may be understood as the region of the light emitting device 100 in which an electric current is used to operate the
  • the electrically active region 106 may have a first electrode 110, a second electrode 114 and an organic functional layer structure 112, as will be explained in more detail below.
  • the first electrode 110 (eg, in the form of a first
  • Electrode layer 110 may be applied.
  • the first electrode 110 (hereinafter also referred to as lower electrode 110) may be formed of or be made of an electrically conductive substance, such as a metal or a conductive conductive oxide (TCO) or a layer stack of multiple layers of the same metal or different metals and / or the same TCO or different TCOs.
  • Transparent conductive oxides are transparent, conductive substances, for example
  • Metal oxides such as zinc oxide, tin oxide,
  • binary metal oxygen compounds such as, for example, ZnO, SnO 2, or ⁇ 2 O 3
  • ternary metal oxygen compounds, such as AlZnO include
  • TCOs do not necessarily correspond to one
  • the first stoichiometric composition may also be p-doped or n-doped.
  • the first stoichiometric composition may also be p-doped or n-doped.
  • the first stoichiometric composition may also be p-doped or n-doped.
  • Electrode 110 comprises a metal; For example, Ag, Pt, Au, Mg, Al, Ba, In, Ca, Sm or Li, as well as compounds, combinations or alloys of these substances.
  • Electrode 110 may be formed by a stack of layers of a combination of a layer of a metal on a layer of a TCO, or vice versa.
  • An example is one
  • ITO indium tin oxide
  • Electrode 110 one or more of the following substances
  • networks of metallic nanowires and particles for example of Ag
  • Networks of carbon nanotubes for example of Ag
  • Graphene particles and layers for example of Graphene particles and layers
  • Networks of semiconducting nanowires for example of Ag
  • the first electrode 110 may comprise electrically conductive polymers or transition metal oxides or electrically conductive transparent oxides.
  • the first electrode 110 may comprise electrically conductive polymers or transition metal oxides or electrically conductive transparent oxides.
  • the first electrode 110 may comprise electrically conductive polymers or transition metal oxides or electrically conductive transparent oxides.
  • Electrode 110 and the carrier 102 may be translucent or transparent.
  • the first electrode 110 comprises or is formed from a metal
  • the first electrode 110 may have, for example, a layer thickness of less than or equal to approximately 25 nm, for example one
  • the first electrode 110 may have, for example, a layer thickness of greater than or equal to approximately 10 nm, for example a layer thickness of greater than or equal to approximately 15 nm
  • the first electrode 110 a Layer thickness in a range of about 10 nm to about 25 nm, for example, a layer thickness in a range of about 10 nm to about 18 nm, for example, a layer thickness in a range of about 15 nm to about 18 nm.
  • the first electrode 110 may have, for example, a layer thickness in a range of about 50 nm to about 500 nm, for example, a layer thickness in a range from about 75 nm to about 250 nm, for example, a layer thickness in a range of
  • the first electrode 110 is made of, for example, a network of metallic nanowires, for example of Ag, which may be combined with conductive polymers, a network of carbon nanotubes, which may be combined with conductive polymers, or of graphene. Layers and composites are formed, the first electrode 110, for example, a
  • Layer thickness in a range of about 1 nm to about 500 nm for example, a layer thickness in a range of about 10 nm to about 400 nm,
  • the first electrode 110 can be used as the anode, ie as
  • hole-injecting electrode may be formed or as
  • Cathode that is as an electron-injecting electrode.
  • the first electrode 110 may be a first electrical
  • the first electrical potential may be applied to the carrier 102, and then indirectly applied to the first electrode 110.
  • the first electrical potential may be, for example, the ground potential or another predetermined reference potential.
  • the organic functional layer structure 112 may comprise one or more emitter layers 118, for example with fluorescent and / or phosphorescent emitters, and one or more hole line layers 116 (also referred to as hole transport layer (s) 120).
  • emitter layers 118 for example with fluorescent and / or phosphorescent emitters
  • hole line layers 116 also referred to as hole transport layer (s) 120.
  • one or more electron conduction layers 116 may be provided.
  • organometallic compounds such as derivatives of polyfluorene, polythiophene and polyphenylene (eg 2- or 2,5-substituted poly-p-phenylenevinylene) and metal complexes, for example iridium complexes such as blue-phosphorescent FIrPic (bis (3,5-difluoro-2- (bis 2-pyridyl) phenyl- (2-carboxypyridyl) -iridium III), green phosphorescent
  • non-polymeric emitters can be deposited by means of thermal evaporation, for example. Furthermore, can
  • Polymer emitters are used, which in particular by means of a wet chemical process, such as a spin-on process (also referred to as spin coating), are deposited.
  • a wet chemical process such as a spin-on process (also referred to as spin coating)
  • spin coating also referred to as spin coating
  • the emitter materials may be suitably embedded in a matrix material.
  • Emitter materials are also provided in other embodiments.
  • light emitting device 100 may be selected so that light emitting device 100 emits white light.
  • the emitter layer (s) 118 may include a plurality of emitter materials of different colors (for example blue and yellow or blue, green and red)
  • the emitter layer (s) 118 may be constructed of multiple sublayers, such as a blue fluorescent emitter layer 118 or blue
  • phosphorescent emitter layer 118 By mixing the different colors, the emission of light can result in a white color impression.
  • a converter material in the beam path of the primary emission generated by these layers, which at least partially absorbs the primary radiation and emits secondary radiation of a different wavelength, so that from a (not yet white) primary radiation through the Combination of primary radiation and secondary radiation gives a white color impression.
  • the organic functional layer structure 112 may generally include one or more electroluminescent layers.
  • the one or more electroluminescent layers may generally include one or more electroluminescent
  • Layers may or may include organic polymers, organic oligomers, organic monomers, organic small, non-polymeric molecules ("small molecules") or a combination of these materials.
  • the organic functional layer structure 112 may be one or more
  • Hole transport layer 120 is or are, so that, for example, in the case of an OLED an effective
  • the organic functional layer structure 112 may include one or more functional layers, which may be referred to as a
  • Electron transport layer 116 is executed or are, so that, for example, in an OLED an effective
  • Electron injection into an electroluminescent layer or an electroluminescent region is made possible.
  • As a substance for the hole transport layer 120 can be any substance for the hole transport layer 120 .
  • the one or more electroluminescent layers may or may not be referred to as
  • Hole transport layer 120 may be deposited on or over the first electrode 110, for example, deposited, and the emitter layer 118 may be on or above the
  • Hole transport layer 120 may be applied, for example, be deposited.
  • electron transport layer 116 may be on or above the Emitter layer 118 applied, for example, deposited, be.
  • the organic functional layer structure 112 (that is, for example, the sum of the thicknesses of hole transport layer (s) 120 and
  • Emitter layer (s) 118 and electron transport layer (s) 116) have a maximum thickness of approximately 1.5 ⁇ m, for example a maximum thickness of approximately 1.2 ⁇ m, for example a maximum layer thickness of approximately 1 ⁇ m, for example a maximum layer thickness of approximately 800 ⁇ m nm, for example a layer thickness of at most approximately 500 nm, for example a layer thickness of at most approximately 400 nm, for example a layer thickness of approximately approximately 300 nm.
  • the organic functional layer structure 112 may include a
  • each OLED may for example have a layer thickness of at most about 1.5 ym, for example, a layer thickness of at most about 1.2 ym, for example, a layer thickness of at most about 1 ym, for example, a layer thickness of about 800 or more nm, for example a layer thickness of at most approximately 500 nm, for example a layer thickness of at most approximately 400 nm, for example a layer thickness of approximately approximately 300 nm.
  • the organic functional layer structure 112 may for example have a layer thickness of at most about 1.5 ym, for example, a layer thickness of at most about 1.2 ym, for example, a layer thickness of at most about 1 ym, for example, a layer thickness of about 800 or more nm, for example a layer thickness of at most approximately 500 nm, for example a layer thickness of at most approximately 400 nm, for example a layer thickness of approximately approximately 300 nm.
  • the organic functional layer structure 112 may for example have a layer thickness of at most about 1.5
  • organic functional layer structure 112 may have a layer thickness of at most about 3 ym.
  • the light emitting device 100 may generally include other organic functional layers, for example
  • Electron transport layer (s) 116 have, in addition serve to further improve the functionality and thus the efficiency of the light emitting device 100.
  • organic functional layer structure 112 On or above the organic functional layer structure 112 or optionally on or above the one or more further organic functional layers
  • Layer structures may be the second electrode 114
  • a second electrode layer 112 (for example in the form of a second electrode layer 114) may be applied.
  • Electrode 114 have the same substances or be formed from it as the first electrode 110, wherein in
  • metals are particularly suitable.
  • Electrode 114 (for example, in the case of a metallic second electrode 114), for example, have a layer thickness of less than or equal to about 50 nm,
  • a layer thickness of less than or equal to approximately 45 nm for example a layer thickness of less than or equal to approximately 40 nm, for example a layer thickness of less than or equal to approximately 35 nm, for example a layer thickness of less than or equal to approximately 30 nm,
  • a layer thickness of less than or equal to about 25 nm for example, a layer thickness of less than or equal to about 20 nm, for example, a layer thickness of less than or equal to about 15 nm, for example, a layer thickness of less than or equal to about 10 nm.
  • the second electrode 114 may generally be formed similarly to, or different from, the first electrode 110.
  • the second electrode 114 may be made of one or more embodiments in various embodiments
  • the first electrode 110 and the second electrode 114 are both formed translucent or transparent. Thus, the shown in Fig.l
  • light emitting device 100 may be formed as a top and bottom emitter (in other words, as a transparent light emitting device 100).
  • the second electrode 114 can be used as the anode, ie as
  • hole-injecting electrode may be formed or as
  • Cathode that is as an electron-injecting electrode.
  • the second electrode 114 may have a second electrical connection to which a second electrical connection
  • the second electrical potential may have a value such that the difference from the first electrical potential has a value in a range of about 1.5V to about 20V, for example, a value in a range of about 2.5V to about 15 V, for example a value in a range of about 3 V to about 12 V.
  • the second electrode 114 and thus on or above the electrically active region 106 may optionally be an encapsulation 108, for example in the form of a
  • Barrier thin film / thin film encapsulation 108 are formed or be.
  • a “barrier thin film” 108 or a “barrier thin film” 108 can be understood to mean, for example, a layer or a layer structure which is suitable for providing a barrier to chemical contaminants or atmospheric substances, in particular to water (moisture). and oxygen, to form.
  • the barrier thin film 108 is so trained that they like OLED-damaging substances
  • the barrier thin-film layer 108 may be formed as a single layer (in other words, as
  • the barrier thin-film layer 108 may comprise a plurality of sub-layers formed on one another.
  • the barrier thin-film layer 108 may comprise a plurality of sub-layers formed on one another.
  • Barrier thin film 108 as a stack of layers (stack)
  • the barrier film 108 or one or more sublayers of the barrier film 108 may be formed by, for example, a suitable deposition process, e.g. by means of a
  • Atomic Layer Deposition e.g. plasma-enhanced atomic layer deposition (PEALD) or plasmaless
  • PECVD plasma enhanced chemical vapor deposition
  • plasmaless vapor deposition plasmaless vapor deposition
  • PLCVD Chemical Vapor Deposition
  • ALD atomic layer deposition process
  • Barrier thin film 108 having multiple sublayers, all sublayers by an atomic layer deposition process be formed.
  • a layer sequence comprising only ALD layers may also be referred to as "nanolaminate".
  • Barrier thin film 108 having a plurality of sublayers, one or more sublayers of the barrier thin film 108 by a deposition method other than one
  • Atomic layer deposition processes are deposited
  • the barrier film 108 may, in one embodiment, have a layer thickness of about 0.1 nm (one atomic layer) to about 1000 nm, for example, a layer thickness of about 10 nm to about 100 nm according to a
  • Embodiment for example, about 40 nm according to an embodiment.
  • all partial layers may have the same layer thickness. According to another embodiment in which the barrier thin-film layer 108 has a plurality of partial layers, all partial layers may have the same layer thickness. According to another embodiment in which the barrier thin-film layer 108 has a plurality of partial layers, all partial layers may have the same layer thickness. According to another embodiment in which the barrier thin-film layer 108 has a plurality of partial layers, all partial layers may have the same layer thickness. According to another
  • Barrier thin layer 108 have different layer thicknesses. In other words, at least one of
  • Partial layers have a different layer thickness than one or more other of the sub-layers.
  • the barrier thin-film layer 108 or the individual partial layers of the barrier thin-film layer 108 may, according to one embodiment, be formed as a translucent or transparent layer.
  • the barrier film 108 (or the individual sub-layers of the barrier film 108) may be made of a translucent or transparent substance (or mixture that is translucent or transparent).
  • the barrier thin-film layer 108 or (in the case of a layer stack having a plurality of partial layers) one or more of the partial layers of the Barrier thin-film 108 comprising or being formed from any of the following: aluminum oxide, zinc oxide, zirconium oxide, titanium oxide, hafnium oxide, tantalum oxide,
  • Silicon oxynitride indium tin oxide, indium zinc oxide, aluminum ⁇ doped zinc oxide, and mixtures and alloys
  • Layer stack with a plurality of sub-layers one or more of the sub-layers of the barrier layer 108 have one or more high-index materials, in other words, one or more high-level materials
  • Refractive index for example with a refractive index of at least 2.
  • Protective varnish 124 may be provided, by means of which, for example, a cover 126 (for example, a glass cover 126) attached to the barrier thin layer 108, for example, is glued.
  • a cover 126 for example, a glass cover 1266 attached to the barrier thin layer 108, for example, is glued.
  • Protective varnish 124 has a layer thickness of greater than 1 ym
  • the adhesive may include or be a lamination adhesive.
  • Adhesive layer can be embedded in various embodiments still light scattering particles, which contribute to a further improvement of the color angle distortion and the
  • Embodiments may be provided as light-scattering particles, for example, dielectric scattering particles such as metal oxides such as silicon oxide (S1O2), zinc oxide (ZnO), zirconium oxide (ZrC> 2), indium tin oxide (ITO) or indium zinc oxide (IZO), gallium oxide (GA20 x) Alumina, or titania.
  • dielectric scattering particles such as metal oxides such as silicon oxide (S1O2), zinc oxide (ZnO), zirconium oxide (ZrC> 2), indium tin oxide (ITO) or indium zinc oxide (IZO), gallium oxide (GA20 x) Alumina, or titania.
  • Other particles may also be suitable, provided that they have a refractive index which is different from the effective refractive index of the matrix of the translucent layer structure, for example air bubbles, acrylate or glass hollow spheres.
  • metallic nanoparticles, metals such as gold, silver, iron nanoparticles, or the like can be provided as
  • an electrically insulating layer is disposed between the second electrode 114 and the layer of adhesive and / or protective lacquer 124.
  • SiN for example, with a layer thickness in a range of about 300 nm to about 1.5 ym, for example, with a layer thickness in a range of about 500 nm to about 1 ym to protect electrically unstable materials, for example during a
  • the adhesive may be configured such that it itself has a refractive index that is less than the refractive index of the refractive index
  • Such an adhesive may be, for example, a low-refractive adhesive such as a
  • Embodiments can be completely dispensed with an adhesive 124, for example in embodiments in which the cover 126, for example made of glass, are applied to the barrier thin layer 108 by means of, for example, plasma spraying.
  • the / may
  • Cover 126 and / or the adhesive 124 have a refractive index (for example, at a wavelength of 633 nm) of 1.55.
  • FIG. 2 shows a schematic cross-sectional view of an optoelectronic component device according to FIG.
  • the organic functional layer structure 112 may be formed on the first electrode 110, wherein the organic functional layer structure 112 may be formed as described in FIG.
  • Layer structure 112 may be formed by means of a first electrical connection layer 210, which may also be understood as part of second electrode 114.
  • an electrically insulating layer 208 for example a resist 208, an electrically insulating layer 208, for example a resist 208, an electrically insulating layer 208, for example a resist 208, an electrically insulating layer 208, for example a resist 208, an electrically insulating layer 208, for example a resist 208, an electrically insulating layer 208, for example a resist 208, an electrically insulating layer 208, for example a resist 208, an electrically insulating layer 208, for example a resist 208, an electrically insulating layer 208, for example a resist 208, an electrically insulating layer 208, for example a resist 208, an electrically insulating layer 208, for example a resist 208, an electrically insulating layer 208, for example a resist 208, an electrically insulating layer 208, for example a resist 208, an electrically insulating layer 208, for example a resist 208, an electrically
  • Layer structure 112 with the electrodes 110, 114 in a plane, ie parallel to each other, are formed by means of the electrical connection layer 210.
  • the electrical connection layer 210 can be considered as electrical Extension of the second electrode 114 by means of a
  • electrically insulating resists 208 are electrically isolated from the first electrode 110.
  • the resist 208 may also be optional in an arrangement of the electrodes 110, 114 without physical contact,
  • the first electrode 110 and the second electrode 114 may be formed according to the description of Fig.l and
  • the first electrical connection layer 210 may comprise the same or a similar material as the first electrode 110 and / or the second electrode 114 according to the description of FIG.
  • functional layer structure 112 i. their energization or power supply, can by means of electrical connections 202, 204 at the edge regions of the optoelectronic
  • Component 200 for example, the geometric edges of the surface of the carrier 102, be realized.
  • a first contact layer 206 can be applied between the electrical connections 202, 204 and the electrodes 110, 114.
  • the first contact layer 206 may comprise a homogeneous layer or a layer sequence, wherein a part of the first contact layer 206 as a substance or
  • FIG. 3 shows a schematic cross-sectional view of an optoelectronic component device according to FIG.
  • thermoelectric component 300 on the carrier 102 of the optoelectronic component 200.
  • FIG. 3 may be, for example, another sectional plane of the carrier 102 of the optoelectronic component 200.
  • the layer structure illustrated in FIG. 3 differs from the layer structure of FIG. 2 in such a way that in the region of the carrier 102 of a thermoelectrically sensitive section 310 on the first electrode 110 no organic
  • thermoelectrically sensitive portion 310 the first contact layer 206 in the region of the thermoelectrically sensitive portion 310 not
  • the first electrical connection layer 210 may be on the
  • the electrical connection layer 210 may be in a range of
  • thermoelectric sensitive portion 310 in physical contact with the non-structured region of the
  • the first non-structured region contact layer 206 will be hereinafter referred to as the second one
  • the second contact layer 314 denotes.
  • the second contact layer 314 may have the same material composition in the thermoelectrically sensitive section 310 as the first contact layer 206 in a region 316 of the terminal 308 of the second electrode 114.
  • Contact layer 314 may have different Seebeck coefficients. As a result, at the common interface 312 of these layers 314, 302 a
  • thermoelectrically sensitive section 310 The thermoelectric voltage of the thermoelectric sensitive portion 310 can be determined by means of the second
  • thermoelectric sensitive portion 310 may be used as a thermoelectrically active part of the thermoelectric
  • Component 300 can be understood.
  • thermoelectric voltage measured on the carrier 102 can be measured by means of a voltage measuring device 304.
  • the voltage measuring device 304 may include
  • thermocouple (not shown), which can convert the measured thermoelectric voltage into a temperature value with respect to the reference thermocouple.
  • the reference thermocouple can be used as the second thermoelectrically active part of the thermoelectric component 300
  • thermocouple may be formed similarly to the thermoelectrically sensitive portion 310.
  • the value of the measured thermoelectric voltage can be proportional to the temperature difference with respect to
  • Proportionality between temperature and thermoelectric voltage may be formed by means of the different Seebeck coefficients of the layers at the common interface 312.
  • the temperature value may be formed as a reference for adjusting a voltage, wherein the voltage across the terminals 202, 204 to the
  • Optoelectronic component 200 can be applied.
  • the electrical connection layer 302 should therefore not be in physical contact with the first contact layer 206 of the second electrode 114, since otherwise in the region of the physical contact of electrical
  • Connecting layer 302 with the contact layer 206 can form a second thermoelectric voltage.
  • the second thermoelectric voltage can compensate for the first thermoelectric voltage, so that effectively no or a reduced thermoelectric
  • Connecting layer 302 and the first electrode 114 may be configured such that forms no thermoelectric voltage at the common interface, for example, by the second electrical connection layer 302 and the second electrode 114 are formed of a same or similar substance.
  • thermoelectric voltage between electrical connection 302 and second electrode 114 may be used in the calculation of the temperature within the
  • Tension measuring device 304 are taken into account
  • thermoelectrically sensitive material composition Having boundary surface with the same material composition as the interface of the electrical connection 302 with the second electrode 114.
  • Section 310 should be chosen such that the
  • Temperature measurement is so high, for example in a range of about 1000: 1 to about 20: 1, that the
  • thermoelectric voltage for example, the input resistance (impedance).
  • the shape of the interface 312 of the thermoelectric sensitive portion 310 may be arbitrarily formed.
  • thermoelectrically sensitive section 310 a prerequisite for any shape of the interface 312 is a homogeneous temperature distribution in the thermoelectrically sensitive section 310.
  • a temperature distribution can, for example, be regarded as homogeneous up to a temperature difference up to which the temperature-dependent optoelectronic properties of the optoelectronic component 200 can still be regarded as homogeneous.
  • thermoelectrically sensitive sections 310 may be formed on a carrier, for example if a plurality of optoelectronic components 200 have a common carrier 102. Each of the plurality of optoelectronic devices 200 or more
  • Optoelectronic components 200 may have a
  • thermoelectric sensitive section 310 have.
  • the common carrier 102 may
  • a carrier 102 according to the description of Fig.l be, for example, a chip wafer 102.
  • the individual optoelectronic components 200 can be produced by means of production-related fluctuations of the layers of the organic functional layer structure 112
  • Optoelectronic devices 200 a are common
  • thermoelectrically sensitive section 310 has thermoelectrically sensitive section 310
  • thermoelectrically sensitive portion 310 is formed as part of the carrier 102 and two or more optoelectronic devices 200 are formed on or above the thermoelectric sensitive portion 310.
  • thermoelectrically sensitive portions 310 on the carrier 102 or on or next to the optoelectronic component 200 regularly or occasionally be formed as thermoelectrically sensitive portions 310.
  • thermoelectric sensitive portions 310 have a series electrical connection or parallel connection.
  • thermoelectrically sensitive portions 310 vertically
  • thermoelectrically sensitive portion ie, the layers 302, 314, at least a common interface 312 with thermoelectric
  • thermocouple Divide voltage, as a thermocouple be set up from the group of thermocouples: type K, J, N, R, S, T, E, Chromel / AuFe, and the tolerance classes 1 or 2.
  • Thermocouples i. the layers with different Seebeck coefficients at their interfaces 312 can form a thermoelectric voltage, may include or be formed from the group of substances: chromium, aluminum, nickel, manganese, silicon, Konstantan a substance or mixture of substances, for example , Iron, platinum, rhodium, copper, tungsten, gold, rhenium.
  • thermoelectric sensitive section 310 may
  • Component 200 are formed.
  • thermoelectrically sensitive portion 310 Mixtures of the layers of the thermoelectrically sensitive portion 310 are applied before applying the optoelectronic component 200 to the carrier 102, for example as an intermediate layer and / or after
  • thermoelectrically sensitive portion 310 may, for example, by means of successive coating by means of shadow masks or by means of coating and
  • Thermoelectrically sensitive portion 310 may be in the existing process flow of the production of the
  • Section 310 should be homogeneous in nature such that internal thermoelectric interfaces exist in the individual
  • thermoelectric sensitive portion 310 Layers of the thermoelectric sensitive portion 310 are not formed.
  • thermoelectrically sensitive portion 310 or a plurality of thermoelectrically sensitive portions 310 and / or an optoelectronic component or a plurality of optoelectronic components may have a common electrode 110, 114.
  • thermoelectric sensitive section and the thermoelectric sensitive section
  • Optoelectronic component allows easy integration of a temperature measuring device in one
  • Temperature measuring device in the optoelectronic component it is possible, for example, the power output of
  • the device device allows the Measuring the temperature of an OLED without affecting the heat transfer coefficient.
  • Thermoelectrically sensitive section to the sectional plane of the optoelectronic component already illustrate the simple feasibility for producing the electronic component device.

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Abstract

L'invention concerne dans différents exemples de réalisation un procédé permettant de fournir un dispositif à composants électronique (400). Ce procédé consiste à : former un composant optoélectronique (200) sur un support (102) ou au-dessus de celui-ci ; former un composant thermoélectrique (300) sur le même support (102) ou au-dessus de celui-ci, la formation du composant optoélectronique (200) et/ou du composant thermoélectronique (300) consistant à appliquer des couches sur le support (102), le composant thermoélectrique (300) comprenant une partie sensible thermoélectriquement (310), la partie sensible thermoélectriquement (310) étant en contact thermique avec le composant optoélectronique (200), la partie sensible thermoélectriquement (310) n'étant pas autoportante, et au moins la formation de la première partie sensible thermoélectriquement (310) du composant thermoélectrique (300) étant intégrée lors de la formation du composant optoélectronique (200).
PCT/EP2014/065506 2013-07-23 2014-07-18 Procédé permettant de produire un dispositif à composants électronique et dispositif à composants électronique WO2015011047A1 (fr)

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