WO2015011047A1

WO2015011047A1 - Method for producing an electronic component apparatus, and electronic component apparatus

Info

Publication number: WO2015011047A1
Application number: PCT/EP2014/065506
Authority: WO
Inventors: Thilo Reusch; Thomas Wehlus
Original assignee: Osram Oled Gmbh
Priority date: 2013-07-23
Filing date: 2014-07-18
Publication date: 2015-01-29
Also published as: DE102013107852A1

Abstract

Various exemplary embodiments provide a method for producing an electronic component apparatus (400), the method comprising: forming an optoelectronic component (200) on or above a support (102); forming a thermoelectric component (300) on or above the same support (102); wherein forming the optoelectronic component (200) and/or the thermoelectric component (300) comprises applying layers onto the support (102); the thermoelectric component (300) has a thermoelectrically sensitive section (310); the thermoelectrically sensitive section (310) is in thermal contact with the optoelectronic component (200); the thermoelectrically sensitive section (310) is not self-supporting; and at least the formation of the first thermoelectrically sensitive section (310) of the thermoelectric component (300) is incorporated in the formation of the optoelectronic component (200).

Description

description

Method for producing an electronic

Component device and electronic

Baue1ementevorrichtung

In various embodiments, a method for manufacturing an electronic component device and an electronic component device are provided.

Important characteristics of organic light-emitting diodes (OLEDs) are temperature-dependent, for example luminance, lumen maintenance (lifetime) and efficiency. Precise knowledge of the temperature is useful for meaningful testing and characterization of an OLED in operation and use.

A conventional method for measuring the temperature of an OLED has the attachment of temperature sensors on the

Outside of an OLED, for example by means of

Thermal compound glued thermocouples on the OLED surface. However, this method can locally influence the heat flux at the OLED surface. At the same time can with this

Measuring method only the temperature at the surface of the OLED can be determined. In addition, the glued

Temperature element disturbing the overall aesthetic impression of the OLED act.

In various embodiments, an electronic component device and a method for the production thereof are provided with which it is possible to precisely determine the temperature distribution of an OLED. In various embodiments, there is provided a method of manufacturing an electronic component device, the method comprising: forming an optoelectronic device on or over a carrier; Forming a thermoelectric device on or over the same carrier; wherein forming the optoelectronic device and / or the thermoelectric device comprises applying layers to the carrier; the

thermoelectric device a thermoelectric

having sensitive section; the thermoelectrically sensitive portion is formed in thermal contact with the optoelectronic device; the thermoelectrically sensitive section is not self-supporting; and

at least forming the thermoelectrically sensitive

Section of the thermoelectric device is involved in forming the optoelectronic component.

In one embodiment of the method, the formation of the optoelectronic component device may comprise a process from the group of processes: structuring of layers by means of shadow masks during the formation of the

Layers and / or structuring of the layers after the

Forming the layers.

In yet another embodiment of the method, at least part of the thermoelectrically sensitive portion of the thermoelectric component can be formed before and / or after the formation of the optoelectronic component.

The parts of the thermoelectrically sensitive portion, prior to forming the optoelectronic device

may be formed on the support, e.g. between carrier and optoelectronic component, are formed from. The parts of the thermoelectrically sensitive section, which after forming the optoelectronic

Component can be formed, for example, on the optoelectronic device, for example on the Encapsulation of the optoelectronic component to be formed.

In yet another embodiment of the method, the

thermoelectric sensitive section of the thermoelectric device simultaneously with layers of the

optoelectronic component can be formed. A simultaneous formation of layers of the thermoelectric component and the optoelectronic component can be realized, for example, by applying a layer to the surface of the support, wherein the

thermoelectric device and the optoelectronic

Component be formed on different areas of the surface of the carrier. That making the

Thermoelectric component is integrated into the production of the optoelectronic component.

In yet another embodiment of the method can in

simultaneously forming the thermoelectrically sensitive

Section with layers of the optoelectronic

Component, at least a portion of the thermoelectrically sensitive portion by means of a non-structuring of a portion of the layers of the optoelectronic

Component be formed. For example, non-patterning may include not removing or forming layers or regions of layers.

In yet another embodiment of the method, the

thermoelectric sensitive portion as a layer or layer structure of the optoelectronic component

be formed. In this case, the thermoelectrically sensitive portion in the region of the optoelectronic component, for example, as electrical transport layers in

Layer cross-section be formed. The electric

Transport layer may be increased to contact the thermoelectrically sensitive region geometrically beyond the dimension of the optoelectronic device addition. By means of this configuration, a thermal coupling of the optoelectronic component to the thermoelectric component can be formed in a simple manner.

In yet another embodiment of the method, a part of the thermoelectrically sensitive portion with a same or similar material composition; or an identical or similar material composition and a same or similar layer thickness; be formed as at least one layer of the optoelectronic

Component.

In yet another embodiment of the method can

the electronic component device are formed such that the thermoelectric component and the optoelectronic component have a common electrode. The thermoelectrically sensitive section should have at most one common electrode of the

be formed optoelectronic component,

for example, grounding, i. the crowd. Otherwise, a simultaneous energizing of the optoelectronic component and a readout of the thermoelectric voltage of the

Thermoelectric device may not be possible.

In yet another embodiment of the method, the

Component device may be formed such that in addition to the thermoelectric device and the optoelectronic device further thermoelectric

Components and / or thermoelectrically sensitive sections and / or optoelectronic components are formed on or above the carrier. The other components or

Sections are also referred to below as second components or second sections.

In yet another embodiment of the method, the two or more thermoelectric components and / or

thermoelectric sensitive sections regularly or sparsely distributed on or over the carrier are formed. A regular arrangement of the thermoelectric components and / or thermoelectrically sensitive portions may be formed, for example, on the surface of the carrier at a uniform distance from each other. An isolated arrangement of the thermoelectric components and / or thermoelectrically sensitive sections can

for example in the geometric center and / or on the

geometric edge may be formed on the surface of the carrier.

In yet another embodiment of the method, in addition to the thermoelectric device or to the

thermoelectric sensitive section at least one further thermoelectric device and / or another

Thermoelectrically sensitive portion to be formed thermally coupled to the optoelectronic device.

In yet another embodiment of the method, the

a plurality of thermoelectric components and / or

Thermoelectrically sensitive portions are formed at different areas of the optoelectronic component. As a result, for example, the temperature of an optoelectronic component at different

Areas are measured. The different regions can be arranged in one plane or offset from each other. In a staggered arrangement, a

thermoelectric device, for example, measure the temperature at the surface of the carrier or the optoelectronic device, i. in the plane parallel to

Surface. Another thermoelectric component could additionally measure the temperature cross section of the optoelectronic component.

In yet another embodiment of the method, the

further thermoelectric components are formed adjacent to or on the thermoelectric device. In yet another embodiment of the method, the

Thermoelectrically sensitive portion are formed such that the optoelectronic component is partially or completely surrounded by the thermoelectric sensitive portion.

In yet another embodiment of the method, the

Thermoelectrically sensitive portion are formed on the support such that the thermoelectrically sensitive

Section is partially or completely a part of the support for the optoelectronic device.

In yet another embodiment of the method, the

Thermoelectrically sensitive portion are formed on the support such that the thermoelectric device partially or completely next to the optoelectronic

Component is formed.

In yet another embodiment of the method, the

Thermoelectric device are formed such that at least two optoelectronic devices a

common thermoelectric sensitive section, for example, if two or more optoelectronic

Components are formed on or over a thermoelectric device.

In yet another embodiment of the method, the

thermoelectric device are formed such that individual layers of the thermoelectric device are formed in homogeneous, with a homogeneous

trained layer no internal thermoelectric

Has interfaces.

In yet another embodiment of the method, the

thermoelectric device as a temperature-measuring

Component be formed. In yet another embodiment of the method, the

thermoelectric device having a voltage measuring device, wherein the voltage measuring device has a

thermoelectrically sensitive portion, wherein the thermoelectrically sensitive portion is formed on or above the support similar or equal to the thermoelectric sensitive portion of the voltage measuring device.

In yet another embodiment of the method, the

thermoelectrically sensitive section of the

Voltage measuring device be designed such that the thermoelectric properties of the electrical connection of the thermoelectric sensitive section on or above the carrier thermoelectric in the course or electrical path to the thermoelectric sensitive portion of

Voltage measuring device are formed. As a result, the influence of the electrical connections of the thermoelectrically sensitive section can be taken into account when measuring the thermoelectric voltage of the thermoelectrically sensitive section on or above the carrier, for example the electrical connections or contacts of the thermoelectrically sensitive section with a voltmeter. As a result, for example, only the thermoelectric voltage of the thermal sensitive area can be measured on or above the carrier.

In yet another embodiment of the method, the

Thermoelectrically sensitive portion on or above the support as a layer structure with layers having different thermoelectric properties are formed such that forms a thermoelectric voltage at the common interface of two layers having different thermoelectric properties, wherein the layers are arranged with different thermoelectric properties such that the thermoelectrically sensitive Section a resulting thermoelectric voltage is applied.

In yet another embodiment of the method, the size of the common boundary surface of the layers having different thermoelectric properties can be formed such that the thermoelectric voltage of the thermoelectrically sensitive section has a value which is at least approximately 50 times higher than the thermoelectric voltage of further layers in the electrical path of the

thermoelectric component. The higher thermoelectric voltage value of the thermoelectrically sensitive portion than the other layers can be understood as a high signal-to-noise ratio. At a high signal-to-noise ratio, for example, in a range of about 1000: 1 to about 50: 1, the deviation of the measured values of successive temperature measurements at a constant temperature may be in a range of about 0.1% to about 2%, for example be. A high signal-to-noise ratio may allow for a low temperature variance in the measurements, i. a

more precise temperature determination. The concrete amount of

Interface of the thermoelectric sensitive section may be dependent on the substances between which a

thermoelectric voltage is formed, the measuring device for measuring voltage, for example, the input resistance, i. the impedance. Furthermore, the type of contacting the thermoelectric sensitive sections with the

Voltage measuring device affect the signal-to-noise ratio. A contact can be formed, for example, as a cohesive contact or a positive contact. Furthermore, the thermal and

electrical insulation of the contacting and other similar parameters affect the signal-to-noise ratio. The temperature is averaged over the amount of the interface, ie at a temperature distribution in or on the OLED should the amount of the interface and / or the shape of the Boundary surface and / or the position of the interface with respect to further layers are chosen such that the

Temperature difference of the temperature distribution is formed below the measurement accuracy and / or matching accuracy of the electronic component device.

In yet another embodiment of the method, the shape of the common interface of the layers having different thermoelectric properties may have a geometric shape from the group of geometric shapes: circle, ring, rectangle, square, polygon or the like.

In yet another embodiment of the method, the

Thermoelectrically sensitive section are formed as a thermocouple, from the group of thermocouples: type K, J, N, R, S, T, E, Chromel / AuFe, and the tolerance classes 1 or 2.

The thermocouples or the layers with different thermoelectric properties, for example

different Seebeck coefficients, at whose

Boundary surfaces can form a thermoelectric voltage, a substance or mixture, such as an alloy, have or be formed from the group of substances: chromium, aluminum, nickel, manganese, silicon,

Constantane, iron, platinum, rhodium, copper, tungsten, gold, rhenium.

In yet another embodiment of the method, the

Layers of the thermoelectric sensitive section with different thermoelectric properties and common interface are formed side by side or one above the other.

In yet another embodiment of the method, the

thermoelectric device can be formed such that the thermoelectric voltage of the thermoelectric sensitive section to the geometric edge of the

electronic component device is moved.

In yet another embodiment of the method, the

thermoelectric device are formed such that a thermoelectric voltage is converted into a temperature value.

In yet another embodiment of the method, the

Component device may be formed such that the temperature value by means of the thermoelectric voltage of the thermoelectric device for controlling the

Response voltage of the optoelectronic component

is formed, wherein the regulation of the threshold voltage at least one optoelectronic property of

Optoelectronic device changed to an optoelectronic target property out. An optoelectronic

In an optoelectronic component, the target property may be a fixed color mixture or a defined intensity of emitted electromagnetic radiation. Individual optoelectronic components can by means of

production-related fluctuations of the layers of

organic functional layer structure have different temperatures, for example on the surface or in the layer cross-section. This can lead to deviations of the optoelectronic properties of individual

Optoelectronic devices come from an optoelectronic target property. The optoelectronic

Device device with multiple optoelectronic

Components can be designed such that

different Ansprechspannungen to the electrodes of the individual optoelectronic devices with

different temperature can be applied. In this case, the individual response voltage can be adjusted based on the measured temperature of the individual optoelectronic component. In yet another embodiment of the method, the

Optoelectronic device with optically active region as an electromagnetic radiation emitting device, such as an organic light emitting diode or laser diode, or as an electromagnetic radiation absorbing device, such as an organic solar cell or a photodetector, are formed.

In yet another embodiment of the method, the

electronic component device as a temperature-controlled optoelectronic device, such as temperature-controlled organic light-emitting diode, are formed.

In various embodiments, there is provided an electronic component device, the electronic component device comprising: a carrier; one

optoelectronic component and a thermoelectric component on or above a carrier; the

optoelectronic component comprising: a first electrode; a second electrode; an optically active region in the current path between the first electrode and the second electrode; an encapsulation; wherein the thermoelectric component has a thermoelectrically sensitive section, wherein the thermoelectrically sensitive section has at least two thermoelectric layers, wherein the at least two thermoelectric layers are in at least one thermoelectric properties

differ, wherein at least the thermoelectric

sensitive portion of the thermoelectric device in physical contact with at least a portion of the

optoelectronic component is.

In one embodiment, at least a portion of the

thermoelectric sensitive section of the

Thermoelectric device under and / or be formed on the optoelectronic component. In yet another embodiment, the thermoelectrically sensitive section of the thermoelectric component may be formed next to the optoelectronic component.

In yet another embodiment, the thermoelectrically sensitive section may be formed as a non-structured region of optoelectronic component.

In yet another embodiment, a portion of the

thermoelectric sensitive section of an identical or similar material composition; or an identical or similar material composition and an identical or similar layer thickness; such as at least one layer of the optoelectronic component.

In yet another embodiment, the electronic

Device device be configured such that the thermoelectric device and the optoelectronic component have a common electrode.

In yet another embodiment, the component device can have, in addition to the thermoelectric component and the optoelectronic component, further thermoelectric components and / or thermoelectrically sensitive portions and / or optoelectronic components on or above the carrier.

In yet another embodiment, the two or more thermoelectric components and / or thermoelectrically sensitive portions may be regularly or individually distributed on or over the carrier.

In yet another embodiment, in addition to the

thermoelectric device or thermoelectric

sensitive section at least one more

thermoelectric device or another Thermoelectrically sensitive portion of the thermoelectric device may be thermally coupled to the optoelectronic component.

In yet another embodiment, the plurality

Thermoelectric components and / or thermoelectrically sensitive portions may be formed on different areas of the optoelectronic component.

In yet another embodiment, the others

thermoelectric devices or thermoelectric

sensitive portions may be formed adjacent to or on the thermoelectric device.

In yet another embodiment, the thermoelectrically sensitive section can be designed such that the optoelectronic component is partially or completely surrounded by at least the thermoelectrically sensitive section.

In yet another embodiment, the thermoelectrically sensitive portion may be formed on the support such that the thermoelectrically sensitive portion is partially or completely formed as a part of the support for the

optoelectronic component is formed.

In yet another embodiment, the thermoelectrically sensitive section can be partially or completely formed next to the optoelectronic component.

In yet another embodiment, the thermoelectrically sensitive portion may be formed as a layer of the optoelectronic component.

In yet another embodiment, the thermoelectric

Component be designed such that at least two Optoelectronic devices a common

have thermoelectrically sensitive section.

In yet another embodiment, the thermoelectric

Component be designed such that individual layers of the thermoelectric device in itself homogeneous

are formed, wherein a homogeneously formed layer has no inner thermoelectric interfaces.

In yet another embodiment, the thermoelectric

Component be set up as a temperature-measuring device.

In yet another embodiment, the thermoelectric

Component having a voltage measuring device, wherein the voltage measuring device has a thermoelectric sensitive portion, wherein the thermoelectric sensitive portion of the voltage measuring device is similar or equal to the thermoelectric sensitive portion formed on or above the carrier. The thermoelectrically sensitive section of the voltage measuring device can be designed such that the thermoelectric properties in the course or electrical path of the electrical connection of the thermoelectrically sensitive section on or above the carrier with the voltage measuring device thermoelectrically at the second thermoelectric sensitive section is measured. In other words, thermoelectric voltages do not compensate each other in the course or electrical path, but are measurable.

In yet another embodiment, the thermoelectric

sensitive section as a layer structure with layers with different thermoelectric properties

be formed such that at the common

Interface of two layers with different

thermoelectric properties of a thermoelectric

Stress forms, whereby the layers with different thermoelectric properties are arranged such that above the thermoelectric sensitive section a

resulting thermoelectric voltage is applied.

In yet another embodiment, the size of the common interface of the layers may be different

be formed thermoelectric properties such that the thermoelectric voltage of the thermoelectric sensitive portion has a value which is at least about 50 times higher than the thermoelectric voltage of other layers in the electrical path of the

thermoelectric component.

In yet another embodiment, the shape of the common interface of the layers may be different

thermoelectric properties have a geometric shape from the group of geometric shapes: circle, ring, rectangle, square, polygon or the like.

In yet another embodiment, the thermoelectrically sensitive section may be formed as a thermocouple from the group of thermocouples: Type K, J, N, R, S,

Chromel / AuFe, and tolerance classes 1 or 2.

In yet another embodiment, the layers of the

thermoelectric section with different

thermoelectric properties and common interface may be formed side by side or one above the other.

In yet another embodiment, the thermoelectric

Component be designed such that the

thermoelectric voltage of the thermoelectric sensitive portion is moved to the geometric edge of the electronic component device.

In yet another embodiment, the electronic

Device be configured such that the thermoelectric voltage of the thermoelectric sensitive section is converted into a temperature value,

for example by means of a display component.

In yet another embodiment, the electronic

Device be configured such that the temperature value by means of the thermoelectric voltage of the thermoelectric device for controlling the

Response voltage of the optoelectronic component

Optoelectronic device changed to an optoelectronic target property out.

In yet another embodiment, the optoelectronic

Component as electromagnetic radiation emitting device, such as an organic light emitting diode, be set up.

In yet another embodiment, the electronic

Device device as a temperature-controlled

optoelectronic component, for example a

Temperature-controlled organic light-emitting diode, be furnished.

Embodiments of the invention are illustrated in the figures and are explained in more detail below.

Show it

Figure 1 is a schematic cross-sectional view of a

optoelectronic component, according to various embodiments;

Figure 2 is a schematic cross-sectional view of a concrete

Embodiment of an optoelectronic component; and Figure 3 is a schematic cross-sectional view of a specific embodiment of a temperature measuring device, according to various embodiments.

In the following detailed description, reference is made to the accompanying drawings, which form a part hereof, and in which is specifically shown by way of illustration

Embodiments are shown in which the invention can be practiced. In this regard will

Directional terminology such as "top", "bottom", "front", "back", "front", "rear", etc. used with reference to the orientation of the described figure (s). There

Components of embodiments in number

different orientations can be positioned, the directional terminology is illustrative and is in no way limiting. It should be understood that other embodiments may be utilized and structural or logical changes may be made without departing from the scope of the present invention. It should be understood that the features of the various exemplary embodiments described herein may be combined with each other unless specifically stated otherwise. The following detailed description is therefore not to be construed in a limiting sense, and the

Scope of the present invention is defined by the appended claims.

In the context of this description, the terms

"connected", "connected" and "coupled" used to describe both a direct and indirect connection, a direct or indirect connection and a direct or indirect coupling. In the figures, identical or similar elements are provided with identical reference numerals, as appropriate. In the context of this description, an organic substance, regardless of the respective state of matter, in chemically uniform form, by

characteristic physical and chemical properties characterized compound of the carbon. Furthermore, in the context of this description, an inorganic substance may be one in a chemically uniform form, regardless of the particular state of matter

present, characterized by characteristic physical and chemical properties of the compound without

Carbon or simple carbon compound can be understood. In the context of this description, an organic-inorganic substance (hybrid substance) can be a

irrespective of the particular state of aggregation, in chemically uniform form, characterized by characteristic physical and chemical properties, of compounds containing carbon and free of carbon. In the context of this description, the term "substance" encompasses all of the abovementioned substances, for example an organic substance, an inorganic substance, and / or a hybrid substance Furthermore, in the context of this description, a mixture of substances can be understood to mean components of two or more different substances whose

For example, components are very finely divided. As a class of substance is a substance or mixture of one or more organic substance (s), one or more inorganic substance (s) or one or more hybrid

Understand substance (s). The term "material" can be used synonymously with the term "substance".

In the context of this description, an electrical component can be understood as meaning a component which can form a current of charged elementary particles by means of an electrical potential difference. An electric

Potential difference can be seen as an imbalance the number of differently charged elementary particles are understood.

In the context of this description can under a

Thermoelectric device to be understood as a component which by means of a temperature difference, an electrical potential difference or by means of a

electrical potential difference can form a temperature difference, the potential difference to a

Forming an electric current can result. Of the

The relationship between temperature and electricity can be described physically by means of the Seebeck effect, Peltier effect or Thomson effect. In the context of this description, an electronic component can be understood as a component which controls, controls or amplifies an electrical component

Stromes concerns, for example by using

Semiconductor devices.

In the context of this description can under a

Optoelectronic component to be understood as a device that by means of a semiconductor device

emitted or absorbed electromagnetic radiation.

Fig.l shows a schematic cross-sectional view of an optoelectronic component, according to various

Exemplary embodiments. The light emitting device 100 in the form of a

Organic light emitting diode 100 may include a carrier 102. The carrier 102 may be used, for example, as a support for electronic elements or layers, for example

light-emitting elements, serve. For example, the carrier 102 may include or be formed from glass, quartz, and / or a semiconductor material or any other suitable material. Further, the carrier 102 may be a Plastic film or a laminate with one or more plastic films or be formed from it. The plastic may be one or more polyolefins (eg, high or low density polyethylene (PE) or

Polypropylene (PP)) or be formed therefrom.

Furthermore, the plastic may be polyvinyl chloride (PVC), polystyrene (PS), polyester and / or polycarbonate (PC),

Polyethylene terephthalate (PET), polyethersulfone (PES) and / or polyethylene naphthalate (PEN) or be formed therefrom. The carrier 102 may be one or more of the above

have mentioned substances. The carrier 102 may be translucent or even transparent.

The term "translucent" or "translucent layer" can be understood in various embodiments that a layer is permeable to light,

for example, for the light generated by the light emitting device, for example one or more

Wavelength ranges, for example, for light in one

Wavelength range of the visible light (for example, at least in a partial region of the wavelength range of 380 nm to 780 nm). For example, the term "translucent layer" in various embodiments is to be understood to mean that substantially all of them are in one

Structure (for example, a layer) coupled

Quantity of light is also coupled out of the structure (for example, layer), wherein part of the light can be scattered here. In various embodiments, the term "transparent" or "transparent layer" can be understood to mean that a layer is permeable to light

(For example, at least in a portion of the

Wavelength range from 380 nm to 780 nm), wherein light coupled into a structure (for example a layer) is coupled out of the structure (for example layer) substantially without scattering or light conversion. Thus, "transparent" in different

In the case that, for example, a light-emitting monochrome or limited in the emission spectrum

is to be provided electronic component, it is sufficient that the optically translucent layer structure at least in a partial region of the wavelength range of the desired monochrome light or for the limited

Emission spectrum is translucent.

In various embodiments, the organic light emitting diode 100 (or else the light emitting devices according to the above or hereinafter described

Embodiments) may be configured as a so-called top and bottom emitter. A top and / or bottom emitter can also be used as an optically transparent component,

For example, a transparent organic light emitting diode, are formed.

On or above the carrier 102 may be in different

Embodiments optionally be arranged a barrier layer 104. The barrier layer 104 may include or consist of one or more of the following: alumina, zinc oxide, zirconia, titania,

Hafnium oxide, tantalum oxide, lanthanum oxide, silicon oxide,

Silicon nitride, silicon oxynitride, indium tin oxide,

Indium zinc oxide, aluminum-doped zinc oxide, as well

Mixtures and alloys thereof. Furthermore, the

The barrier layer 104 in various embodiments have a layer thickness in a range of about 0.1 nm (one atomic layer) to about 5000 nm, for example, a layer thickness in a range of about 10 nm to about 200 nm, for example, a layer thickness of about 40 nm. On or above the barrier layer 104, an electrically active region 106 of the light-emitting component 100 may be arranged. The electrically active region 106 may be understood as the region of the light emitting device 100 in which an electric current is used to operate the

light emitting device 100 flows. In various exemplary embodiments, the electrically active region 106 may have a first electrode 110, a second electrode 114 and an organic functional layer structure 112, as will be explained in more detail below.

Thus, in various embodiments, on or above the barrier layer 104 (or, if the barrier layer 104 is not present on or above the carrier 102), the first electrode 110 (eg, in the form of a first

Electrode layer 110) may be applied. The first electrode 110 (hereinafter also referred to as lower electrode 110) may be formed of or be made of an electrically conductive substance, such as a metal or a conductive conductive oxide (TCO) or a layer stack of multiple layers of the same metal or different metals and / or the same TCO or different TCOs. Transparent conductive oxides are transparent, conductive substances, for example

Metal oxides, such as zinc oxide, tin oxide,

Cadmium oxide, titanium oxide, indium oxide, or indium tin oxide (ITO). In addition to binary metal oxygen compounds, such as, for example, ZnO, SnO 2, or Ιη 2 O 3, ternary metal oxygen compounds, such as AlZnO, for example, include

Zn2SnO4, CdSnO3, ZnSnO3, Mgln204, GalnO3, ηηΐη2θ5 or

In4Sn30] _2 or mixtures of different transparent conductive oxides to the group of TCOs and can be used in various embodiments.

Furthermore, the TCOs do not necessarily correspond to one

stoichiometric composition and may also be p-doped or n-doped. In various embodiments, the first

Electrode 110 comprises a metal; For example, Ag, Pt, Au, Mg, Al, Ba, In, Ca, Sm or Li, as well as compounds, combinations or alloys of these substances.

In various embodiments, the first

Electrode 110 may be formed by a stack of layers of a combination of a layer of a metal on a layer of a TCO, or vice versa. An example is one

Silver layer deposited on an indium tin oxide (ITO) layer (Ag on ITO) or ITO-Ag-ITO multilayers.

In various embodiments, the first

Electrode 110 one or more of the following substances

alternatively or additionally to the abovementioned substances: networks of metallic nanowires and particles, for example of Ag; Networks of carbon nanotubes; Graphene particles and layers; Networks of semiconducting nanowires.

Furthermore, the first electrode 110 may comprise electrically conductive polymers or transition metal oxides or electrically conductive transparent oxides. In various embodiments, the first

Electrode 110 and the carrier 102 may be translucent or transparent. In the case where the first electrode 110 comprises or is formed from a metal, the first electrode 110 may have, for example, a layer thickness of less than or equal to approximately 25 nm, for example one

Layer thickness of less than or equal to approximately 20 nm,

For example, the first electrode 110 may have, for example, a layer thickness of greater than or equal to approximately 10 nm, for example a layer thickness of greater than or equal to approximately 15 nm

Embodiments, the first electrode 110 a Layer thickness in a range of about 10 nm to about 25 nm, for example, a layer thickness in a range of about 10 nm to about 18 nm, for example, a layer thickness in a range of about 15 nm to about 18 nm.

Further, in the case where the first electrode 110 has or is formed of a conductive transparent oxide (TCO), the first electrode 110 may have, for example, a layer thickness in a range of about 50 nm to about 500 nm, for example, a layer thickness in a range from about 75 nm to about 250 nm, for example, a layer thickness in a range of

about 100 nm to about 150 nm.

Furthermore, if the first electrode 110 is made of, for example, a network of metallic nanowires, for example of Ag, which may be combined with conductive polymers, a network of carbon nanotubes, which may be combined with conductive polymers, or of graphene. Layers and composites are formed, the first electrode 110, for example, a

Layer thickness in a range of about 1 nm to about 500 nm, for example, a layer thickness in a range of about 10 nm to about 400 nm,

For example, a layer thickness in a range of

about 40 nm to about 250 nm.

The first electrode 110 can be used as the anode, ie as

hole-injecting electrode may be formed or as

Cathode, that is as an electron-injecting electrode.

The first electrode 110 may be a first electrical

Contact pad, to which a first electrical

Potential (provided by a power source (not shown), for example, a power source or a voltage source) can be applied. Alternatively, the first electrical potential may be applied to the carrier 102, and then indirectly applied to the first electrode 110. The first electrical potential may be, for example, the ground potential or another predetermined reference potential.

Furthermore, the electrically active region 106 of the

light emitting device 100 is an organic

functional layer structure 112, which is applied on or above the first electrode 110 or

is trained.

The organic functional layer structure 112 may comprise one or more emitter layers 118, for example with fluorescent and / or phosphorescent emitters, and one or more hole line layers 116 (also referred to as hole transport layer (s) 120). In

According to various embodiments, alternatively or additionally, one or more electron conduction layers 116 (also referred to as electron transport layer (s) 116) may be provided.

Examples of emitter materials used in the

light emitting device 100 according to various

Embodiments of Emitter Layer (s) 118

organic or organic

organometallic compounds, such as derivatives of polyfluorene, polythiophene and polyphenylene (eg 2- or 2,5-substituted poly-p-phenylenevinylene) and metal complexes, for example iridium complexes such as blue-phosphorescent FIrPic (bis (3,5-difluoro-2- (bis 2-pyridyl) phenyl- (2-carboxypyridyl) -iridium III), green phosphorescent

Ir (ppy) 3 (tris (2-phenylpyridine) iridium III), red

Phosphorus Ru (dtb-bpy) 3 * 2 (PFg) (tris [4, 4'-di-tert-butyl- (2, 2 ') -bipyridine] ruthenium (III) complex) and blue-fluorescent DPAVBi (4, 4 Bis [4- (di-p-tolylamino) styryl] biphenyl), green fluorescent TTPA (9, 10-bis [N, -di- (p-tolyl) -amino] anthracene) and red

fluorescent DCM2 (4-dicyanomethylene) -2-methyl-6-yl-ulolidyl-9-enyl-4H-pyran) as a non-polymeric emitter. Such non-polymeric emitters can be deposited by means of thermal evaporation, for example. Furthermore, can

Polymer emitters are used, which in particular by means of a wet chemical process, such as a spin-on process (also referred to as spin coating), are deposited.

The emitter materials may be suitably embedded in a matrix material.

It should be noted that other suitable

Emitter materials are also provided in other embodiments.

The emitter materials of the emitter layer (s) 118 of the

For example, light emitting device 100 may be selected so that light emitting device 100 emits white light. The emitter layer (s) 118 may include a plurality of emitter materials of different colors (for example blue and yellow or blue, green and red)

Alternatively, the emitter layer (s) 118 may be constructed of multiple sublayers, such as a blue fluorescent emitter layer 118 or blue

phosphorescent emitter layer 118, a green

phosphorescent emitter layer 118 and a red

phosphorescent emitter layer 118. By mixing the different colors, the emission of light can result in a white color impression. Alternatively, it can also be provided to arrange a converter material in the beam path of the primary emission generated by these layers, which at least partially absorbs the primary radiation and emits secondary radiation of a different wavelength, so that from a (not yet white) primary radiation through the Combination of primary radiation and secondary radiation gives a white color impression.

The organic functional layer structure 112 may generally include one or more electroluminescent layers. The one or more electroluminescent

Layers may or may include organic polymers, organic oligomers, organic monomers, organic small, non-polymeric molecules ("small molecules") or a combination of these materials. For example, the organic functional layer structure 112 may be one or more

have electroluminescent layers, which as

Hole transport layer 120 is or are, so that, for example, in the case of an OLED an effective

Hole injection into an electroluminescent layer or an electroluminescent region is made possible.

Alternatively, in various embodiments, the organic functional layer structure 112 may include one or more functional layers, which may be referred to as a

Electron transport layer 116 is executed or are, so that, for example, in an OLED an effective

Electron injection into an electroluminescent layer or an electroluminescent region is made possible. As a substance for the hole transport layer 120 can

for example, tertiary amines, carbazole derivatives, conductive

Polyaniline or Polyethylendioxythiophen be used. In various embodiments, the one or more electroluminescent layers may or may not be referred to as

be carried out electroluminescent layer.

In various embodiments, the

Hole transport layer 120 may be deposited on or over the first electrode 110, for example, deposited, and the emitter layer 118 may be on or above the

Hole transport layer 120 may be applied, for example, be deposited. In various embodiments, electron transport layer 116 may be on or above the Emitter layer 118 applied, for example, deposited, be.

In various embodiments, the organic functional layer structure 112 (that is, for example, the sum of the thicknesses of hole transport layer (s) 120 and

Emitter layer (s) 118 and electron transport layer (s) 116) have a maximum thickness of approximately 1.5 μm, for example a maximum thickness of approximately 1.2 μm, for example a maximum layer thickness of approximately 1 μm, for example a maximum layer thickness of approximately 800 μm nm, for example a layer thickness of at most approximately 500 nm, for example a layer thickness of at most approximately 400 nm, for example a layer thickness of approximately approximately 300 nm. In various exemplary embodiments, the organic functional layer structure 112 may include a

Stack of several directly stacked

have organic light-emitting diodes (OLEDs), wherein each OLED may for example have a layer thickness of at most about 1.5 ym, for example, a layer thickness of at most about 1.2 ym, for example, a layer thickness of at most about 1 ym, for example, a layer thickness of about 800 or more nm, for example a layer thickness of at most approximately 500 nm, for example a layer thickness of at most approximately 400 nm, for example a layer thickness of approximately approximately 300 nm. In various exemplary embodiments, the organic functional layer structure 112

For example, have a stack of two, three or four directly superposed OLEDs, in which case, for example, organic functional layer structure 112 may have a layer thickness of at most about 3 ym.

Optionally, the light emitting device 100 may generally include other organic functional layers, for example

arranged on or over one or more

Emitter layers 118 or on or over the or the

Electron transport layer (s) 116 have, in addition serve to further improve the functionality and thus the efficiency of the light emitting device 100.

On or above the organic functional layer structure 112 or optionally on or above the one or more further organic functional layers

Layer structures may be the second electrode 114

(for example in the form of a second electrode layer 114) may be applied.

In various embodiments, the second

Electrode 114 have the same substances or be formed from it as the first electrode 110, wherein in

various embodiments metals are particularly suitable.

In various embodiments, the second

Electrode 114 (for example, in the case of a metallic second electrode 114), for example, have a layer thickness of less than or equal to about 50 nm,

for example, a layer thickness of less than or equal to approximately 45 nm, for example a layer thickness of less than or equal to approximately 40 nm, for example a layer thickness of less than or equal to approximately 35 nm, for example a layer thickness of less than or equal to approximately 30 nm,

For example, a layer thickness of less than or equal to about 25 nm, for example, a layer thickness of less than or equal to about 20 nm, for example, a layer thickness of less than or equal to about 15 nm, for example, a layer thickness of less than or equal to about 10 nm.

The second electrode 114 may generally be formed similarly to, or different from, the first electrode 110. The second electrode 114 may be made of one or more embodiments in various embodiments

be formed of several of the substances and with the respective layer thickness or, as above in connection with the first electrode 110 described. In different

Embodiments, the first electrode 110 and the second electrode 114 are both formed translucent or transparent. Thus, the shown in Fig.l

light emitting device 100 may be formed as a top and bottom emitter (in other words, as a transparent light emitting device 100).

The second electrode 114 can be used as the anode, ie as

hole-injecting electrode may be formed or as

Cathode, that is as an electron-injecting electrode.

The second electrode 114 may have a second electrical connection to which a second electrical connection

Potential (which is different from the first one)

electric potential) provided by the

Energy source, can be applied. For example, the second electrical potential may have a value such that the difference from the first electrical potential has a value in a range of about 1.5V to about 20V, for example, a value in a range of about 2.5V to about 15 V, for example a value in a range of about 3 V to about 12 V. On or above the second electrode 114 and thus on or above the electrically active region 106 may optionally be an encapsulation 108, for example in the form of a

Barrier thin film / thin film encapsulation 108 are formed or be.

In the context of this application, a "barrier thin film" 108 or a "barrier thin film" 108 can be understood to mean, for example, a layer or a layer structure which is suitable for providing a barrier to chemical contaminants or atmospheric substances, in particular to water (moisture). and oxygen, to form. In other words, the barrier thin film 108 is so trained that they like OLED-damaging substances

Water, oxygen or solvents can not or at most be penetrated to very small proportions. According to an embodiment, the barrier thin-film layer 108 may be formed as a single layer (in other words, as

Single layer) may be formed. According to an alternative embodiment, the barrier thin-film layer 108 may comprise a plurality of sub-layers formed on one another. In other words, according to one embodiment, the

Barrier thin film 108 as a stack of layers (stack)

be educated. The barrier film 108 or one or more sublayers of the barrier film 108 may be formed by, for example, a suitable deposition process, e.g. by means of a

Atomic Layer Deposition (ALD) according to one embodiment, e.g. plasma-enhanced atomic layer deposition (PEALD) or plasmaless

Atomic deposition method (Plasma-less Atomic Layer

Deposition (PLALD)), or by means of a chemical

Gas phase deposition process (Chemical Vapor Deposition

(CVD)) according to another embodiment, e.g. one

plasma enhanced chemical vapor deposition (PECVD) or plasmaless vapor deposition (plasma-less

Chemical Vapor Deposition (PLCVD)), or alternatively by other suitable deposition methods. By using an atomic layer deposition process (ALD) very thin layers can be deposited. In particular, layers can be deposited whose layer thicknesses are in the atomic layer region. According to one embodiment, in a

Barrier thin film 108 having multiple sublayers, all sublayers by an atomic layer deposition process be formed. A layer sequence comprising only ALD layers may also be referred to as "nanolaminate".

According to an alternative embodiment, in a

Barrier thin film 108 having a plurality of sublayers, one or more sublayers of the barrier thin film 108 by a deposition method other than one

Atomic layer deposition processes are deposited,

for example by means of a gas phase separation process.

The barrier film 108 may, in one embodiment, have a layer thickness of about 0.1 nm (one atomic layer) to about 1000 nm, for example, a layer thickness of about 10 nm to about 100 nm according to a

Embodiment, for example, about 40 nm according to an embodiment.

According to an embodiment in which the barrier thin-film layer 108 has a plurality of partial layers, all partial layers may have the same layer thickness. According to another

Design, the individual sub-layers of

Barrier thin layer 108 have different layer thicknesses. In other words, at least one of

Partial layers have a different layer thickness than one or more other of the sub-layers.

The barrier thin-film layer 108 or the individual partial layers of the barrier thin-film layer 108 may, according to one embodiment, be formed as a translucent or transparent layer. In other words, the barrier film 108 (or the individual sub-layers of the barrier film 108) may be made of a translucent or transparent substance (or mixture that is translucent or transparent). According to one embodiment, the barrier thin-film layer 108 or (in the case of a layer stack having a plurality of partial layers) one or more of the partial layers of the Barrier thin-film 108 comprising or being formed from any of the following: aluminum oxide, zinc oxide, zirconium oxide, titanium oxide, hafnium oxide, tantalum oxide,

Lanthanum oxide, silicon oxide, silicon nitride,

Silicon oxynitride, indium tin oxide, indium zinc oxide, aluminum ^¬ doped zinc oxide, and mixtures and alloys

the same. In various embodiments, the barrier thin film 108 or (in the case of a

Layer stack with a plurality of sub-layers) one or more of the sub-layers of the barrier layer 108 have one or more high-index materials, in other words, one or more high-level materials

Refractive index, for example with a refractive index of at least 2.

In various embodiments, on or above the barrier thin film 108, an adhesive and / or a

Protective varnish 124 may be provided, by means of which, for example, a cover 126 (for example, a glass cover 126) attached to the barrier thin layer 108, for example, is glued. In various embodiments, the optically translucent layer of adhesive and / or

Protective varnish 124 has a layer thickness of greater than 1 ym

have, for example, a layer thickness of several ym. In various embodiments, the adhesive may include or be a lamination adhesive.

In the layer of the adhesive (also referred to as

Adhesive layer) can be embedded in various embodiments still light scattering particles, which contribute to a further improvement of the color angle distortion and the

Can lead outcoupling efficiency. In different

Embodiments may be provided as light-scattering particles, for example, dielectric scattering particles such as metal oxides such as silicon oxide (S1O2), zinc oxide (ZnO), zirconium oxide (ZrC> 2), indium tin oxide (ITO) or indium zinc oxide (IZO), gallium oxide (GA20 _x) Alumina, or titania. Other particles may also be suitable, provided that they have a refractive index which is different from the effective refractive index of the matrix of the translucent layer structure, for example air bubbles, acrylate or glass hollow spheres. Furthermore, for example, metallic nanoparticles, metals such as gold, silver, iron nanoparticles, or the like can be provided as light-scattering particles.

In various embodiments, between the second electrode 114 and the layer of adhesive and / or protective lacquer 124, an electrically insulating layer

(not shown) are applied or be

For example, SiN, for example, with a layer thickness in a range of about 300 nm to about 1.5 ym, for example, with a layer thickness in a range of about 500 nm to about 1 ym to protect electrically unstable materials, for example during a

wet-chemical process.

In various embodiments, the adhesive may be configured such that it itself has a refractive index that is less than the refractive index of the refractive index

Cover 126. Such an adhesive may be, for example, a low-refractive adhesive such as a

Acrylate having a refractive index of about 1.3. Furthermore, a plurality of different adhesives may be provided which form an adhesive layer sequence. It should also be noted that in various

Embodiments can be completely dispensed with an adhesive 124, for example in embodiments in which the cover 126, for example made of glass, are applied to the barrier thin layer 108 by means of, for example, plasma spraying. In various embodiments, the / may

Cover 126 and / or the adhesive 124 have a refractive index (for example, at a wavelength of 633 nm) of 1.55.

Furthermore, in various embodiments

additionally one or more antireflection coatings

(for example combined with the encapsulation 108,

for example, the barrier thin film 108) in the

be provided light emitting device 100.

FIG. 2 shows a schematic cross-sectional view of an optoelectronic component device according to FIG

different configurations.

Shown is a part of an embodiment of a

Optoelectronic component 100 with the carrier 102, on which a metallization is applied, which is formed as the first electrode 110 and the second electrode 114, respectively.

The organic functional layer structure 112 may be formed on the first electrode 110, wherein the organic functional layer structure 112 may be formed as described in FIG. The electrical connection of the second electrode 114 with the organic functional

Layer structure 112 may be formed by means of a first electrical connection layer 210, which may also be understood as part of second electrode 114.

Together with an electrically insulating layer 208, for example a resist 208, an electrical

Association of organic functional

Layer structure 112 with the electrodes 110, 114 in a plane, ie parallel to each other, are formed by means of the electrical connection layer 210. In other words: the electrical connection layer 210 can be considered as electrical Extension of the second electrode 114 by means of a

electrically insulating resists 208 are electrically isolated from the first electrode 110. The resist 208 may also be optional in an arrangement of the electrodes 110, 114 without physical contact,

for example, with an arrangement of the electrodes 110, 114 similar to a cross with the organic functional

Layer structure 112 between the electrodes 110, 114 as electrical insulation.

The first electrode 110 and the second electrode 114 may be formed according to the description of Fig.l and

For example, have ITO or be formed from ITO. The first electrical connection layer 210 may comprise the same or a similar material as the first electrode 110 and / or the second electrode 114 according to the description of FIG. The external electrical connection of the organic

functional layer structure 112, i. their energization or power supply, can by means of electrical connections 202, 204 at the edge regions of the optoelectronic

Component 200, for example, the geometric edges of the surface of the carrier 102, be realized.

As encapsulation of the first electrode 110 and the second electrode 114, a first contact layer 206 can be applied between the electrical connections 202, 204 and the electrodes 110, 114. The first contact layer 206 may comprise a homogeneous layer or a layer sequence, wherein a part of the first contact layer 206 as a substance or

Mixture, for example, chromium and / or aluminum

or may be formed therefrom, for example a layer stack of chromium-aluminum-chromium. 3 shows a schematic cross-sectional view of an optoelectronic component device according to FIG

various embodiments. Shown is a schematic cross section of a

Embodiment of a thermoelectric component 300 on the carrier 102 of the optoelectronic component 200. FIG. 3 may be, for example, another sectional plane of the carrier 102 of the optoelectronic component 200.

The layer structure illustrated in FIG. 3 differs from the layer structure of FIG. 2 in such a way that in the region of the carrier 102 of a thermoelectrically sensitive section 310 on the first electrode 110 no organic

functional layer structure 112 is formed.

Furthermore, the first contact layer 206 in the region of the thermoelectrically sensitive portion 310 not

be structured, for example, not be removed. The first electrical connection layer 210 may be on the

Contact layer 206 are formed, i. the electrical connection layer 210 may be in a range of

thermoelectric sensitive portion 310 in physical contact with the non-structured region of the

Contact layer 206 be. The first non-structured region contact layer 206 will be hereinafter referred to as the second one

Contact layer 314 denotes. The second contact layer 314 may have the same material composition in the thermoelectrically sensitive section 310 as the first contact layer 206 in a region 316 of the terminal 308 of the second electrode 114.

The material of the first electrical connection 302, the material of the first contact layer 206 and the second

Contact layer 314 may have different Seebeck coefficients. As a result, at the common interface 312 of these layers 314, 302 a

Build thermoelectric voltage. The area of the second electrical connection layer 302 and second

Contact layer 314 with a common interface 312 can be understood as a thermoelectrically sensitive section 310. The thermoelectric voltage of the thermoelectric sensitive portion 310 can be determined by means of the second

electrical connection layer 302, the electrodes 110, 114 and the first contact layer 206 and the second

Contact layer 314 are moved to the terminals 306, 308.

The thermoelectric sensitive portion 310 may be used as a thermoelectrically active part of the thermoelectric

Component 300 can be understood.

The thermoelectric voltage measured on the carrier 102 can be measured by means of a voltage measuring device 304. The voltage measuring device 304 may include

Reference thermocouple (not shown), which can convert the measured thermoelectric voltage into a temperature value with respect to the reference thermocouple.

The reference thermocouple can be used as the second thermoelectrically active part of the thermoelectric component 300

be understood. The reference thermocouple may be formed similarly to the thermoelectrically sensitive portion 310.

The value of the measured thermoelectric voltage can be proportional to the temperature difference with respect to

Be temperature of the reference thermocouple. The

Proportionality between temperature and thermoelectric voltage may be formed by means of the different Seebeck coefficients of the layers at the common interface 312. The temperature value may be formed as a reference for adjusting a voltage, wherein the voltage across the terminals 202, 204 to the

Optoelectronic component 200 can be applied. The electrical connection layer 302 should therefore not be in physical contact with the first contact layer 206 of the second electrode 114, since otherwise in the region of the physical contact of electrical

Connecting layer 302 with the contact layer 206 (not shown) can form a second thermoelectric voltage. The second thermoelectric voltage can compensate for the first thermoelectric voltage, so that effectively no or a reduced thermoelectric

Voltage can be measured.

Furthermore, the substances of the electric

Connecting layer 302 and the first electrode 114 may be configured such that forms no thermoelectric voltage at the common interface, for example, by the second electrical connection layer 302 and the second electrode 114 are formed of a same or similar substance.

In one embodiment, the thermoelectric voltage between electrical connection 302 and second electrode 114 may be used in the calculation of the temperature within the

Tension measuring device 304 are taken into account,

for example, by the reference thermocouple a

Having boundary surface with the same material composition as the interface of the electrical connection 302 with the second electrode 114. The amount of the surface of the thermoelectrically sensitive

Section 310 should be chosen such that the

Signal-to-noise ratio for a stable

Temperature measurement is so high, for example in a range of about 1000: 1 to about 20: 1, that the

Deviation of the measured values in succession

Temperature measurements at constant temperature, for example in a range of about 0.1% to about 5%

is trained.

The concrete amount of the area of the thermoelectric

sensitive portion 310 may be dependent on the

Substances between which a thermoelectric voltage is formed, the measuring device 304 for voltage measurement, for example, the input resistance (impedance). Furthermore, the type of contacting of the terminals 306, 308 with the contact layers 206, 314, for example

Bonded contact or positive contact, the thermal and electrical insulation of the terminals 306, 308 and other similar parameters affect the signal-to-noise ratio.

The shape of the interface 312 of the thermoelectric sensitive portion 310 may be arbitrarily formed.

However, a prerequisite for any shape of the interface 312 is a homogeneous temperature distribution in the thermoelectrically sensitive section 310.

A temperature distribution can, for example, be regarded as homogeneous up to a temperature difference up to which the temperature-dependent optoelectronic properties of the optoelectronic component 200 can still be regarded as homogeneous.

In one embodiment, a plurality of thermoelectrically sensitive sections 310 may be formed on a carrier, for example if a plurality of optoelectronic components 200 have a common carrier 102. Each of the plurality of optoelectronic devices 200 or more

Optoelectronic components 200 may have a

thermoelectric sensitive section 310 have. A possible embodiment, for example

optoelectronic components 200 on a common

Carrier 102 before separating the optoelectronic Be 200 devices. The common carrier 102 may

For example, a carrier 102 according to the description of Fig.l be, for example, a chip wafer 102. The individual optoelectronic components 200 can be produced by means of production-related fluctuations of the layers of the organic functional layer structure 112

have different electrical resistances and different electrical losses. This can be done on the

Surface or in the layer cross-section of the individual

Optoelectronic devices 200 different

Temperatures be formed.

In one embodiment, two or more

Optoelectronic devices 200 a common

have thermoelectrically sensitive section 310,

For example, when the thermoelectrically sensitive portion 310 is formed as part of the carrier 102 and two or more optoelectronic devices 200 are formed on or above the thermoelectric sensitive portion 310.

In one embodiment, the two or more

Thermoelectrically sensitive portions 310 on the carrier 102 or on or next to the optoelectronic component 200 regularly or occasionally be formed as thermoelectrically sensitive portions 310.

In yet another embodiment, two or more

thermoelectric sensitive portions 310 have a series electrical connection or parallel connection.

In yet another embodiment, two or more

thermoelectrically sensitive portions 310 vertically

be formed one above the other or horizontally next to each other.

In one embodiment, the thermoelectrically sensitive portion, ie, the layers 302, 314, at least a common interface 312 with thermoelectric

Divide voltage, as a thermocouple be set up from the group of thermocouples: type K, J, N, R, S, T, E, Chromel / AuFe, and the tolerance classes 1 or 2. The

Thermocouples, i. the layers with different Seebeck coefficients at their interfaces 312 can form a thermoelectric voltage, may include or be formed from the group of substances: chromium, aluminum, nickel, manganese, silicon, Konstantan a substance or mixture of substances, for example , Iron, platinum, rhodium, copper, tungsten, gold, rhenium.

The substances or mixtures of layers of the

thermoelectric sensitive section 310 may

for example, simultaneously with layers of

optoelectronic component on the carrier 102nd

be applied, for example, if materially identical or similar layers in the optoelectronic

Component 200 are formed.

In yet another embodiment, the substances or the

Mixtures of the layers of the thermoelectrically sensitive portion 310 are applied before applying the optoelectronic component 200 to the carrier 102, for example as an intermediate layer and / or after

Forming the optoelectronic component 200,

for example, on the encapsulation 118.

The formation of the thermoelectrically sensitive portion 310 may, for example, by means of successive coating by means of shadow masks or by means of coating and

subsequent structuring of the substances or the

Be prepared mixtures. Making the

Thermoelectrically sensitive portion 310 may be in the existing process flow of the production of the

be integrated optoelectronic component. The individual layers of the thermoelectrically sensitive

Section 310 should be homogeneous in nature such that internal thermoelectric interfaces exist in the individual

Layers of the thermoelectric sensitive portion 310 are not formed.

In yet another embodiment, a thermoelectrically sensitive portion 310 or a plurality of thermoelectrically sensitive portions 310 and / or an optoelectronic component or a plurality of optoelectronic components may have a common electrode 110, 114.

In various embodiments, a method for manufacturing an electronic component device and an electronic component device are provided with which it is possible to measure the temperature directly inside an optoelectronic component. As a result, the accuracy of the measurement can be significantly increased. The appearance is not changed. The arrangement of the thermoelectric sensitive section and the

Optoelectronic component allows easy integration of a temperature measuring device in one

existing production process of an optoelectronic

Component. By means of integration of the

Temperature measuring device in the optoelectronic component, it is possible, for example, the power output of

Module driver to the temperature of the optoelectronic

Adapt component and so compensate for fluctuations in luminance due to temperature fluctuations. The

Possibility of temperature measurement on the inside of the optoelectronic device, i. on the surface of the carrier, allows in combination with others

Temperature measurements on the outside, i. the surface of the optoelectronic component, the determination of

Heat transfer of the optoelectronic component to the environment. Furthermore, the device device allows the Measuring the temperature of an OLED without affecting the heat transfer coefficient.

The few differences of the cutting plane of the

Thermoelectrically sensitive section to the sectional plane of the optoelectronic component already illustrate the simple feasibility for producing the electronic component device.

Claims

claims

1. Method for producing an electronic

A device device, the method comprising: forming an opto-electronic device (200) on or above a carrier (102); Forming a thermoelectric device (300) on or above the same carrier (102);

Wherein the forming of the optoelectronic component (200) and / or of the thermoelectric component

(300) comprises applying layers to the carrier (102);

Wherein the forming of the thermoelectric device (300) comprises forming a thermoelectric sensitive portion (310), wherein the thermoelectric sensitive portion (310) is formed in thermal contact with the optoelectronic component (200), and the thermoelectric sensitive portion (310) is formed non-self-supporting; and

· At least forming the thermoelectrically sensitive

Section (310) is involved in forming the optoelectronic component (200) such that at least the thermoelectrically sensitive section (310) is connected to at least part of the

optoelectronic component (200) in physical

Contact is being trained.

2. Method according to claim 1,

wherein at least a portion of the thermoelectric

sensitive section (310) of the thermoelectric

Component (300) is formed before forming the optoelectronic component (200); and / or at least part of the thermoelectrically sensitive portion (310) of the thermoelectric device (300) is formed after the formation of the optoelectronic component (200). Method according to claim 1 or 2,

wherein the thermoelectrically sensitive portion (310) of the thermoelectric device (300) is formed simultaneously with layers of the optoelectronic component (200).

Method according to one of claims 1 to 3,

wherein the thermoelectrically sensitive portion (310) is a layer or layer structure of the

optoelectronic component (200) is formed.

Method according to one of claims 1 to 4,

wherein the electronic component device is formed such that the thermoelectric component (300) and the optoelectronic component (200) have a common electrode.

Method according to one of claims 1 to 5,

wherein the thermoelectrically sensitive portion (310) is formed such that the optoelectronic component (200) is partially or completely surrounded by the thermoelectric sensitive portion (310).

Method according to one of claims 1 to 6,

wherein the thermoelectric device (300) as

Temperature-measuring device (300) is formed.

Method according to one of claims 1 to 7,

wherein the thermoelectric device (300) a

Voltage measuring device (304), wherein the

Voltage measuring device (304) has a thermoelectric sensitive portion, wherein the

thermoelectrically sensitive portion (310) on or above the support, similar or equal to the support

thermoelectric sensitive section of the

Voltage measuring device (304) is formed.

9. The method according to claim 1, wherein the thermoelectrically sensitive section (310) is formed on or above the carrier as a layer structure with layers having different thermoelectric properties (206, 302) such that at the

common interface of two layers with

different thermoelectric properties (206, 302) a thermoelectric voltage can be formed, wherein the layers with different

thermoelectric properties (206, 302) are arranged such that above the thermoelectric sensitive portion (310) has a resultant

thermoelectric voltage is applied.

10. Electronic component device, comprising:

• a carrier;

An optoelectronic component (200) and a

thermoelectric device (300) on or above a support (102);

• wherein the optoelectronic component (200)

having :

o a first electrode (110);

o a second electrode (114);

o an optically active region (112) in the current path between the first electrode (110) and the second electrode (114);

o an encapsulation;

Wherein the thermoelectric component (300) has a thermoelectrically sensitive portion (310), wherein the thermoelectrically sensitive portion (310) has at least two thermoelectric layers (302, 314), wherein the at least two

thermoelectric layers (302, 314) differ in at least one thermoelectric properties, wherein at least the thermoelectric sensitive portion (310) of the thermoelectric Device (300) in physical contact with at least a part of the optoelectronic

Component (200) stands.

The electronic component device according to claim 10, wherein the electronic component device is arranged such that the thermoelectric device (300) and the optoelectronic device (200) have a common electrode.

Electronic component device according to claim 10 or 11,

wherein the thermoelectrically sensitive portion (310) is formed as a layer of the optoelectronic component (200).

Electronic component device according to one of claims 10 to 12,

wherein the thermoelectric device (300) as

Temperature-measuring device (300) is set up.

Electronic component device according to one of claims 10 to 13,

wherein the optoelectronic component (200) with optically active region (112) is designed as an electromagnetic radiation emitting component (200), in particular an organic light emitting diode (200).

Electronic component device according to one of claims 10 to 14,

wherein the electronic component device is configured as a temperature-controlled optoelectronic component (200), in particular a temperature-controlled organic light-emitting diode (200). 0