WO2015053600A1 - Diode électroluminescente semi-conductrice - Google Patents

Diode électroluminescente semi-conductrice Download PDF

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Publication number
WO2015053600A1
WO2015053600A1 PCT/KR2014/009591 KR2014009591W WO2015053600A1 WO 2015053600 A1 WO2015053600 A1 WO 2015053600A1 KR 2014009591 W KR2014009591 W KR 2014009591W WO 2015053600 A1 WO2015053600 A1 WO 2015053600A1
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Prior art keywords
electrode
layer
film
openings
connection electrode
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PCT/KR2014/009591
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English (en)
Korean (ko)
Inventor
전수근
진근모
백승호
Original Assignee
주식회사 세미콘라이트
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Priority claimed from KR1020130121308A external-priority patent/KR101544128B1/ko
Priority claimed from KR1020130121309A external-priority patent/KR101543728B1/ko
Priority claimed from KR1020130123235A external-priority patent/KR101553639B1/ko
Priority claimed from KR1020130137688A external-priority patent/KR20150055390A/ko
Priority claimed from KR1020140061620A external-priority patent/KR20150141198A/ko
Priority claimed from KR1020140072872A external-priority patent/KR101591969B1/ko
Priority claimed from KR1020140072875A external-priority patent/KR101604092B1/ko
Application filed by 주식회사 세미콘라이트 filed Critical 주식회사 세미콘라이트
Publication of WO2015053600A1 publication Critical patent/WO2015053600A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/387—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body

Definitions

  • the present disclosure relates to a semiconductor light emitting device as a whole, and more particularly, to a semiconductor light emitting device having improved brightness by reducing light loss.
  • the semiconductor light emitting device refers to a semiconductor optical device that generates light through recombination of electrons and holes, for example, a group III nitride semiconductor light emitting device.
  • the group III nitride semiconductor consists of a compound of Al (x) Ga (y) In (1-x-y) N (0 ⁇ x ⁇ 1, 0 ⁇ y ⁇ 1, 0 ⁇ x + y ⁇ 1).
  • GaAs type semiconductor light emitting elements used for red light emission, etc. are mentioned.
  • FIG. 1 is a view showing an example of a semiconductor light emitting device disclosed in US Patent No. 7,262,436.
  • the semiconductor light emitting device may include a substrate 100, an n-type semiconductor layer 300 grown on the substrate 100, an active layer 400 grown on the n-type semiconductor layer 300, and p grown on the active layer 400.
  • a chip having such a structure that is, a chip in which both the electrodes 901, 902, 903 and the electrode 800 are formed on one side of the substrate 100, and the electrodes 901, 902, 903 function as a reflective film is called a flip chip.
  • the electrodes 901, 902 and 903 may include a high reflectance electrode 901 (eg Ag), an electrode 903 (eg Au) for bonding, and an electrode 902 which prevents diffusion between the electrode 901 material and the electrode 903 material; Example: Ni).
  • This metal reflective film structure has a high reflectance and has an advantage in current spreading, but has a disadvantage of light absorption by metal.
  • FIG. 2 is a view showing an example of a semiconductor light emitting device disclosed in Japanese Laid-Open Patent Publication No. 2006-20913.
  • the semiconductor light emitting device includes a substrate 100, a buffer layer 200 grown on the substrate 100, an n-type semiconductor layer 300 grown on the buffer layer 200, and an active layer 400 grown on the n-type semiconductor layer 300.
  • the bonding pad 700 and the n-side bonding pad 800 are formed on the etched and exposed n-type semiconductor layer 300.
  • the distributed Bragg reflector 900 DBR: Distributed Bragg Reflector
  • the metal reflecting film 904 are provided on the transparent conductive film 600. According to this configuration, the light absorption by the metal reflective film 904 is reduced, but there is a disadvantage in that current spreading is not smoother than using the electrodes 901, 902, 903.
  • FIG. 1 is a view showing an example of a semiconductor light emitting device disclosed in US Patent No. 7,262,436;
  • FIG. 2 is a view showing an example of a semiconductor light emitting device disclosed in Japanese Laid-Open Patent Publication No. 2006-120913;
  • FIG. 3 is a view for explaining an example of a semiconductor light emitting device according to the present disclosure.
  • 4 to 8 are views for explaining an example of a method of manufacturing a semiconductor light emitting device according to the present disclosure
  • FIG. 9 is a view for explaining another example of the semiconductor light emitting device according to the present disclosure.
  • FIG. 10 is a view for explaining another example of the semiconductor light emitting device according to the present disclosure.
  • FIG. 11 is a view for explaining another example of the semiconductor light emitting device according to the present disclosure.
  • FIG. 12 is a view for explaining another example of the semiconductor light emitting device according to the present disclosure.
  • FIG. 13 is a view for explaining another example of the semiconductor light emitting device according to the present disclosure.
  • FIG. 14 is a view for explaining another example of the semiconductor light emitting device according to the present disclosure.
  • 15 is a view for explaining an example of a semiconductor light emitting device according to the present disclosure.
  • 16 to 20 are views illustrating an example of a method of manufacturing a semiconductor light emitting device according to the present disclosure
  • 21 is a view for explaining another example of the semiconductor light emitting device according to the present disclosure.
  • 22 is a view for explaining another example of the semiconductor light emitting device according to the present disclosure.
  • FIG. 23 is a view for explaining a section taken along the line B-B in FIG. 22;
  • 25 is a view for explaining another example of the semiconductor light emitting device according to the present disclosure.
  • 26 is a view for explaining another example of the semiconductor light emitting device according to the present disclosure.
  • FIG. 27 is a view for explaining an example of a semiconductor light emitting device according to the present disclosure.
  • 28 to 32 are views illustrating an example of a method of manufacturing a semiconductor light emitting device according to the present disclosure
  • 33 is a view for explaining examples of how a plurality of second openings are arranged.
  • 35 is a view for explaining another example of the semiconductor light emitting device according to the present disclosure.
  • 36 is a view for explaining another example of the semiconductor light emitting device according to the present disclosure.
  • FIG. 37 is a view for explaining another example of the semiconductor light emitting device according to the present disclosure.
  • 38 is a view for explaining an example of a semiconductor light emitting device according to the present disclosure.
  • 39 is a view for explaining an example of a second ohmic electrode
  • 40 to 46 are views for explaining an example of a method of manufacturing a semiconductor light emitting device according to the present disclosure.
  • 49 is a view for explaining another example of the semiconductor light emitting device according to the present disclosure.
  • FIG. 50 is a view for explaining another example of the semiconductor light emitting device according to the present disclosure.
  • 51 is a view for explaining an example of a semiconductor light emitting device according to the present disclosure.
  • FIG. 52 is a view for explaining an example of a portion where light is likely to be transmitted from a nonconductive reflecting film
  • FIG. 53 is a view for explaining another example of the semiconductor light emitting device according to the present disclosure.
  • 54 to 65 are views illustrating an example of a method of manufacturing a semiconductor light emitting device according to the present disclosure.
  • 66 is a view for explaining an example of a semiconductor light emitting device according to the present disclosure.
  • 67 and 68 are views illustrating an example of a method of manufacturing a semiconductor light emitting device according to the present disclosure
  • 69 is a view for explaining another example of the semiconductor light emitting device according to the present disclosure.
  • 70 is a view for explaining another example of the semiconductor light emitting device according to the present disclosure.
  • 71 is a view for explaining another example of the semiconductor light emitting device according to the present disclosure.
  • 73 is a view for explaining another example of the semiconductor light emitting device according to the present disclosure.
  • 74 is a view for explaining another example of the semiconductor light emitting device according to the present disclosure.
  • 75 is a view for explaining an example of a portion where light is likely to be transmitted from a nonconductive reflecting film
  • 76 is a view for explaining another example of the semiconductor light emitting device according to the present disclosure.
  • 77 to 80 are views illustrating another example of a method of manufacturing a semiconductor light emitting device according to the present disclosure.
  • 81 is a view for explaining another example of the semiconductor light emitting device according to the present disclosure.
  • 82 is a view for explaining still another example of the semiconductor light emitting device according to the present disclosure.
  • 83 is a diagram illustrating an example of a semiconductor light emitting device according to the present disclosure.
  • FIG. 84 is a view illustrating an example of a cross section taken along a line A-A in FIG. 83;
  • FIG. 85 is a view illustrating an example of a cross section taken along a line B-B in FIG. 83;
  • 86 is a view for explaining an example of an opening forming step
  • 87 is a view for explaining an example of a planar distribution of a lower electrode and an opening
  • FIG. 88 is a view for explaining an example of the layer structure of the second lower electrode 81;
  • 89 is a view for explaining another example of the semiconductor light emitting device according to the present disclosure.
  • FIG. 90 is a view illustrating an example in which an upper electrode is patterned avoiding an end of an extension connection electrode in FIG. 89;
  • 91 is a view for explaining another example of the semiconductor light emitting device according to the present disclosure.
  • FIG. 92 is a view for explaining an example of a portion where light is likely to be transmitted from a nonconductive reflecting film
  • FIG. 93 is a view for explaining another example of the semiconductor light emitting device according to the present disclosure.
  • FIG. 94 is a view showing still another example of a semiconductor light emitting device according to the present disclosure.
  • 96 is a view illustrating an example of a lower electrode in a semiconductor light emitting device according to the present disclosure.
  • FIG 3 is a view for explaining an example of a semiconductor light emitting device according to the present disclosure.
  • the semiconductor light emitting device includes a substrate 10, a plurality of semiconductor layers, a reflective layer 91, a first connection electrode 71, a second connection electrode 73 and 75, a first electrode 81, and a second electrode 85. It includes.
  • FIG. 3 is a diagram illustrating a cross section taken along line A-A of FIG. 8.
  • the group III nitride semiconductor light emitting element will be described as an example.
  • Sapphire, SiC, Si, GaN and the like are mainly used as the substrate 10, and the substrate 10 may be finally removed.
  • the plurality of semiconductor layers may include a buffer layer 20 formed on the substrate 10, a first semiconductor layer 30 having a first conductivity (for example, Si-doped GaN), and a second semiconductor layer having a second conductivity different from the first conductivity. (Eg, Mg-doped GaN) and an active layer 40 interposed between the first semiconductor layer 30 and the second semiconductor layer 50 to generate light through recombination of electrons and holes (eg, InGaN / ( In) GaN multi-quantum well structure).
  • Each of the semiconductor layers 30, 40, and 50 may be formed in multiple layers, and the buffer layer 20 may be omitted.
  • the reflective layer 91 reflects light from the active layer 40 toward the plurality of semiconductor layers 30, 40, and 50.
  • the reflective layer 91 is formed of a non-conductive reflective film to reduce light absorption by the metal reflective film.
  • the reflective layer 91 includes, for example, a distributed Bragg reflector 91a, a dielectric film 91b and a clad film 91c.
  • the dielectric film 91b or the clad film 91c may be omitted.
  • the distributed Bragg reflector 91a is nonconductive
  • the entirety of the dielectric film 91b, the distributed Bragg reflector 91a and the clad film 91c function as the nonconductive reflecting film 91.
  • the distribution Bragg reflector 91a reflects light from the active layer 40 toward the substrate 10 side.
  • the distribution Bragg reflector 91a is preferably formed of a light transmitting material (eg SiO 2 / TiO 2) to prevent absorption of light.
  • the dielectric film 91b is positioned between the plurality of semiconductor layers 30, 40, and 50 and the distribution Bragg reflector 91a, and the dielectric film (for example, SiO 2 ) having a refractive index smaller than the effective refractive index of the Distribution Bragg reflector 91a. It may be made of.
  • the effective refractive index refers to the equivalent refractive index of light that can travel in a waveguide made of materials having different refractive indices.
  • the dielectric film 91b may also help reflection of light, and may also function as an insulating film electrically blocking the first connection electrode 71 from the second semiconductor layer 50 and the active layer 40.
  • the clad film 91c is formed on the distribution Bragg reflector 91a, and the clad film 91c is also a material lower than the effective refractive index of the distribution Bragg reflector 91a (eg, Al 2 O 3, SiO 2, SiON, MgF, CaF). It can be made of).
  • a large portion of light generated in the active layer 40 is reflected by the dielectric film 91b and the distributed Bragg reflector 91a toward the first semiconductor layer 30.
  • the relationship between the dielectric film 91b, the distributed Bragg reflector 91a, and the clad film 91c can be described in terms of an optical waveguide.
  • the optical waveguide is a structure that guides the light by using total reflection by surrounding the light propagation part with a material having a lower refractive index. From this point of view, when the distributed Bragg reflector 91a is viewed as the propagation section, the dielectric film 91b and the clad film 91c surround the propagation section and can be viewed as part of the optical waveguide.
  • the reflective layer 91 is formed with at least one first opening 63 and at least one second opening 65 used as an electrical connection passage.
  • the plurality of first openings 63 are formed up to a part of the reflective layer 91, the second semiconductor layer 50, the active layer 40, and the first semiconductor layer 30, and the plurality of second openings 65. ) Is formed through the reflective layer 91.
  • the first connection electrode 71 and the second connection electrodes 73 and 75 are formed on the reflective layer 91, for example, on the clad film 91c.
  • the first connection electrode 71 extends into the plurality of first openings 63 to be electrically connected to the first semiconductor layer 30.
  • the second connection electrodes 73 and 75 are electrically connected to the second semiconductor layer 50 through the plurality of second openings 65.
  • the semiconductor light emitting device may include a conductive film 60 between the plurality of semiconductor layers 30, 40, 50 and the reflective layer 91, for example, between the second semiconductor layer 50 and the dielectric film 91b.
  • the conductive layer 60 may be formed of a current diffusion electrode (ITO, etc.), an ohmic metal layer (Cr, Ti, etc.), a reflective metal layer (Al, Ag, etc.), or a combination thereof.
  • the conductive film 60 is preferably made of a light transmissive conductive material (eg, ITO).
  • the second connection electrodes 73 and 75 extend to the plurality of second openings 65 to be electrically connected to the conductive film 60.
  • the dielectric film 91b extends between the conductive film 60 and the distributed Bragg reflector 91a to the inner surface of the first opening 63, thereby connecting the first connection electrode 71 to the second semiconductor layer 50. ) And the active layer 40 and the second connection electrodes 73 and 75.
  • another separate insulating film may be formed between the dielectric film 91b and the conductive film 60.
  • first connection electrode 71 and the second connection electrode 73, 75 as described above, for current diffusion to the plurality of semiconductor layers 30, 40, 50 or for uniform current supply.
  • a plurality of first openings 63 and a plurality of second openings 65 are formed for the electrical connection passages of. The number, spacing, and arrangement of the first openings 63 and the second openings 65 may be appropriately adjusted for the size, current spreading, and uniform current supply of the semiconductor light emitting device.
  • the plurality of first openings 63 and the plurality of second openings 65 are symmetrically formed with respect to the center of the semiconductor light emitting device.
  • a current is supplied through the plurality of first openings 63 and the plurality of second openings 65, and if the current is nonuniform, some of the first openings 63 and the second openings 65 may be biased. As a result, deterioration may occur at a position where current is biased in the long term.
  • the closed loop shape is not limited to the complete closed loop shape, but also includes a closed loop shape (see FIG. 9) in which a part is turned off.
  • a plurality of first openings 63 and a plurality of second openings 65 symmetrically arranged are formed in the reflective layer 91, and the first connection electrode 71 has a plurality of first openings 63 in a closed loop shape. ), And the second connection electrodes 73 and 75 are connected to each other by connecting the plurality of second openings 65 in a closed loop shape (see FIG. 8).
  • the closed-loop connecting electrode connects the openings to supply an equal current through each opening, and is uniformly or symmetrically in any direction, so that uniformity of current supply and consequently, uniformity of current density in the light emitting surface is obtained. It is very advantageous to improve. It may be better for the closed loop shape to have a shape along the outer shape of the light emitting surface of the semiconductor light emitting device to improve symmetry and uniformity.
  • the semiconductor light emitting device includes one closed loop first connection electrode 71 and two closed loop second connection electrodes 73 and 75 (see FIG. 8).
  • the first connection electrode 71 is positioned between the two second connection electrodes 73 and 75.
  • the two second connection electrodes 73 and 75 may be formed on the inner side of the closed loop of the first connection electrode 71 and the outer second side of the first connection electrode 71.
  • the connection electrode 73 is divided. An interval between the inner second connection electrode 75, the first connection electrode 71, and the outer second connection electrode 73 may be equal or different. In order to improve the luminous efficiency, a suitable value of the interval can be found.
  • a gap between the outer side of the semiconductor light emitting device and the outer second connection electrode 73 may be appropriately selected to improve luminous efficiency.
  • one second connection electrode may be formed in a closed loop shape, and the first electrode positioned inside the second connection electrode may be formed in a straight line, a radial shape, or a cross shape.
  • the first connection electrode and the second connection electrode in order to give flexibility of the electrical connection with the first electrode 81 and the second electrode 85 and the position and area design of the first electrode 81 and the second electrode 85 which will be described later.
  • one of the connection electrodes may not be a closed loop shape, as described above, both the first connection electrode 71 and the second connection electrodes 73 and 75 are symmetrically shaped as much as possible for uniformity of current distribution. For example, it is preferable to be formed in a closed loop shape.
  • the inner second connection electrode 75 and the outer second connection electrode 73 respectively connect the plurality of second openings 65 in a rectangular closed loop shape.
  • the first connection electrode 71 connects the plurality of first openings 63 in a rectangular closed loop shape.
  • the closed loop is not limited to the quadrangle and may be variously changed according to the planar shape of the semiconductor light emitting device.
  • the corner may be rounded so that the distance between the first connection electrode 71 and the second connection electrodes 73 and 75 is the same as other portions at the corners of the square shape.
  • the innermost closed loop connection electrode may be the first connection electrode or the second connection electrode, or may be selected.
  • the current diffusion in the second semiconductor layer 50 may be designed in consideration of the current diffusion.
  • the inner second connection electrode 75 is positioned at the innermost side
  • the outer second connection electrode 73 is disposed at the outermost side to supply holes to the second semiconductor layer 50. It may be desirable to distribute the passages evenly on the inside and outside of the light emitting surface.
  • the temperature difference between the positions on the light emitting surface is small.
  • a plurality of first openings 63, a plurality of second openings 65, a first connection electrode 71, an outer second connection electrode 73 and an inner second connection electrode 75 are disposed as described above. In this case, it is more advantageous to reduce the temperature difference between the inner region 5 of the semiconductor light emitting element and the other region.
  • the center region or the inner region 5 may have a poor heat dissipation efficiency than other portions.
  • the second opening 65 for supplying the current is not located in the innermost region 5 of the innermost closed loop connection electrode, that is, the inner second connection electrode 75. Therefore, the second opening 65 is not located in the inner region 5, so that the amount of heat generated is also smaller. Thus, the temperature difference between the inner region 5 and the other region is reduced. Therefore, it is more advantageous to maintain long-term performance of the semiconductor light emitting device. In order to obtain the effect of reducing the temperature difference, an appropriate value can be found by increasing or decreasing the area of the inner region 5. Alternatively, when the first connection electrode is located at the innermost side, the first opening 63 may not be positioned in the inner region to reduce the temperature difference as described above.
  • the semiconductor light emitting device includes an insulating layer 95 covering the first connection electrode 71 and the second connection electrode on the reflective layer 91. At least one third opening 67 and at least one fourth opening 69 are formed in the insulating layer 95. Insulating layer 95 may be formed of SiO 2.
  • the first electrode 81 and the second electrode 85 are formed on the insulating layer 95.
  • the first electrode 81 is electrically connected to the first connection electrode 71 through the third opening 67 to supply electrons to the first semiconductor layer 30.
  • the second electrode 85 is electrically connected to the second connection electrodes 73 and 75 through the fourth opening 69 to supply holes to the second semiconductor layer 50.
  • the first electrode 81 and the second electrode 85 may be electrodes for eutectic bonding.
  • the semiconductor light emitting device reduces light absorption by using a non-conductive reflecting film including a distribution Bragg reflector 91a instead of a metal reflecting film.
  • a plurality of first openings 63 and second openings 65 are formed to facilitate diffusion of current into the plurality of semiconductor layers 30, 40, 50.
  • a plurality of first openings 63 and a plurality of second openings 65 are connected to the first connection electrode 71 or the second connection electrodes 73 and 75 having a closed loop shape to supply current more evenly. This prevents deterioration due to current bias.
  • since there is no opening for supplying current in the inner region 5 of the innermost closed loop connection electrode the amount of heat generated is reduced, which helps to maintain the long-term performance by reducing the temperature difference between the inner region 5 and another region.
  • 4 to 8 are diagrams illustrating an example of a method of manufacturing a semiconductor light emitting device according to the present disclosure.
  • a plurality of semiconductor layers 30, 40, 50 are grown on the substrate 10.
  • a buffer layer eg, an AlN or GaN buffer layer
  • an undoped semiconductor layer eg, an un-doped GaN
  • a first semiconductor layer 30 having a first conductivity eg Si-doped GaN
  • an active layer 40 InGaN / (In) GaN multi-quantum well structure
  • the second semiconductor layer 50 (50 (eg, Mg-doped GaN)) having a second conductivity different from the first conductivity is grown.
  • the buffer layer 20 may be omitted, and each of the semiconductor layers 30, 40, and 50 may be formed in multiple layers.
  • the first semiconductor layer 30 and the second semiconductor layer 50 may be formed with opposite conductivity, but are not preferable in the case of a group III nitride semiconductor light emitting device.
  • the conductive film 60 is formed on the second semiconductor layer 50.
  • the conductive layer 60 may be formed of a light transmissive conductor (eg, ITO) to reduce light absorption. Although the conductive film 60 may be omitted, it is generally provided to spread the current to the second semiconductor layer 50.
  • ITO light transmissive conductor
  • the reflective layer 91 is formed on the conductive film 60.
  • the dielectric film 91b, the distributed Bragg reflector 91a, and the clad film 91c covering the conductive film 60 are formed.
  • the dielectric film 91b or the clad film 91c may be omitted.
  • the distributed Bragg reflector 91a is formed by stacking a pair of SiO 2 and TiO 2 a plurality of times, for example.
  • the distribution Bragg reflector 91a may be formed of a combination of a high refractive index material such as Ta 2 O 5 , HfO, ZrO, SiN, and a dielectric thin film having a lower refractive index (typically SiO 2).
  • the distribution Bragg reflector 91a is composed of TiO 2 / SiO 2 , it is preferable to perform an optimization process in consideration of the incident angle and reflectance according to the wavelength based on an optical thickness of 1/4 of the wavelength of the light emitted from the active layer.
  • the thickness of each layer does not necessarily have to conform to 1/4 optical thickness of the wavelength.
  • the number of combinations is suitable for 4 to 20 pairs.
  • the effective refractive index of the distribution Bragg reflector 91a is larger than the refractive index of the dielectric film 91b for the reflection and guide of light.
  • the dielectric film 91b may be made of SiO 2 , and the thickness thereof is appropriately 0.2um to 1.0um. Prior to the deposition of the distributed Bragg reflector 91a requiring precision, by forming the dielectric film 91b having a predetermined thickness, the distributed Bragg reflector 91a can be stably manufactured and can also help reflection of light. .
  • a clad layer (91c) may be formed of a dielectric film (91b), material of MgF, CaF, such as a metal oxide, SiO 2, SiON, such as Al 2 O 3.
  • the clad film 91c may also be formed of SiO 2 having a refractive index of 1.46 smaller than the effective refractive index of the distribution Bragg reflector 91a.
  • the clad film 91c is positioned below It is preferable to be thicker than [lambda] / 4n so as to be differentiated from the top layer of the Bragg reflector 91a.
  • the clad film 91c is not only burdened with the subsequent steps of forming the plurality of first openings 63 and the plurality of second openings 65, but also because the increase in thickness does not contribute to the improvement in efficiency and only the material cost can be increased. Too thick beyond 3.0 ⁇ m is undesirable.
  • the maximum value of the thickness of the clad film 91c is formed within 1 ⁇ m to 3 ⁇ m. However, in some cases, it is not impossible to form more than 3.0um.
  • the distribution Bragg reflector 91a When the distribution Bragg reflector 91a is directly in contact with the first connection electrode 71 and the second connection electrodes 73 and 75, a part of the light traveling through the distribution Bragg reflector 91a is partially connected to the first connection electrode 71. ) And the second connection electrodes 73 and 75. Therefore, when the clad film 91c and the dielectric film 91b having a refractive index lower than that of the distribution Bragg reflector 91a are introduced as described above, the first connection electrode 71 and the second connection electrode 73 and 75 may be used. The amount of light absorption can be greatly reduced.
  • a case in which the dielectric film 91b is omitted may be considered, which is not preferable from the viewpoint of the optical waveguide, but from the viewpoint of the overall technical idea of the present disclosure, it is composed of the distributed Bragg reflector 91a and the clad film 91c. There is no reason to rule out this. Instead of the distribution Bragg reflector 91a, one may consider the case where the dielectric film 91b made of TiO 2 is used as the dielectric material. In the case where the distribution Bragg reflector 91a is provided with the SiO 2 layer on the uppermost layer, the case where the clad film 91c is omitted may also be considered.
  • the dielectric film 91b, the distributed Bragg reflector 91a, and the clad film 91c serve as an optical waveguide as a non-conductive reflecting film, and preferably have a total thickness of 1 to 8 um.
  • a plurality of first openings 63 and a plurality of second openings 65 are formed in the reflective layer 91.
  • a plurality of first openings 63 and a plurality of second openings 65 are formed by dry etching or wet etching or a combination thereof.
  • the first opening 63 is formed to the reflective layer 91, the second semiconductor layer 50, the active layer 40, and a portion of the first semiconductor layer 30.
  • the second opening 65 is formed to penetrate the reflective layer 91 to expose a portion of the conductive layer.
  • the first opening 63 and the second opening 65 may be formed after the formation of the reflective layer 91.
  • the plurality of semiconductor layers 30 may be formed before or after the formation of the conductive film 60.
  • the first opening 63 may be further processed through the reflective layer 91.
  • the first connection electrode 71 and the second connection electrode 73 and 75 are formed on the reflective layer 91.
  • the first connection electrode 71 and the second connection electrode 73 and 75 may be deposited using sputtering equipment, E-beam equipment, or the like.
  • the first connection electrode 71 and the second connection electrode 73 and 75 may be formed using Cr, Ti, Ni, or a combination thereof for stable electrical contact, and may include a reflective metal layer such as Al or Ag. It may be.
  • the first connection electrode 71 may be formed to contact the first semiconductor layer 30 through the plurality of first openings 63, and the second connection electrodes 73 and 75 may be the plurality of second openings 65. It may be formed to contact the conductive film 60 through).
  • the first connection electrodes 71 and the second connection electrodes 73 and 75 are formed in a closed loop shape.
  • the inner second connection electrode 75 may not have a closed loop shape, but may have a plate shape covering the inner region 5.
  • the width of the first connection electrode 71 and the second connection electrode 73 and 75 may be advantageously wide for uniform current supply or smooth current supply, the light absorption is reduced and the first connection electrode 71 and the second connection electrode are advantageous. The width is limited to maintain the gap between the connection electrodes 73 and 75.
  • an insulating layer covering the first connection electrode 71 and the second connection electrode 73, 75 is formed.
  • Representative material of the insulating layer 95 is SiO 2 , without being limited thereto, SiN, TiO 2 , Al 2 O 3 , Su-8 and the like may be used.
  • at least one third opening 67 and at least one fourth opening 69 are formed in the insulating layer 95.
  • the third openings 67 and the fourth openings 69 connect the electrical connection between the first electrode 81 and the first connection electrode 71, and the second electrode 85 and the second connection electrode 73 and 75.
  • the third opening 67 and the fourth opening 69 are formed so as not to overlap with the first opening 63 and the second opening 65.
  • first connection electrode 71 and the second connection electrode 73 and 75 have a closed loop shape, that is, the first connection electrode 71 and the second connection electrode 73 and 75 are in any direction. Positioned evenly, as a result, various positions for forming the third opening 67 and the fourth opening 69 can be provided. This provides more flexibility in designing the position and area of the first electrode 81 and the second electrode 85 to be followed.
  • the first electrode 81 and the second electrode 85 may be formed on the insulating layer 95 using the sputtering equipment, the E-beam equipment, or the like. 81 and second electrode 85 may be deposited.
  • the first electrode 81 is connected to the first connection electrode 71 through at least one third opening 67
  • the second electrode 85 is connected to the second through at least one fourth opening 69. It is connected to the electrodes 73 and 75. Therefore, both the inner second connection electrode 75 and the outer second connection electrode 73 are connected to the second electrode 85, and the plurality of second openings 65 are closed loop-shaped inner second connection electrode 75. ) And the outer second connection electrode 73.
  • the inner second connection electrode 75, the outer second connection electrode 73, and the plurality of second openings 65 are electrically in phase with each other and are symmetrically and evenly arranged in shape.
  • the plurality of first openings 63 are also connected by the first connection electrode 71 having a closed loop shape. Therefore, it is possible to ensure the uniformity as well as the diffusion of the current.
  • the first electrode 81 and the second electrode 85 may be electrically connected to electrodes provided outside (package, COB, submount, etc.) by a method such as stud bump, conductive paste, and eutectic bonding.
  • a method such as stud bump, conductive paste, and eutectic bonding.
  • the semiconductor light emitting device according to the present example since the first electrode 81 and the second electrode 85 can be formed on the insulating layer 95 by the same process, there is almost no height difference between the two electrodes. Thus there is an advantage in the case of eutectic bonding.
  • the uppermost portions of the first electrode 81 and the second electrode 85 are eutectic bonding such as Au / Sn alloy and Au / Sn / Cu alloy. It can be formed of a material.
  • FIG. 9 is a view for explaining another example of the semiconductor light emitting device according to the present disclosure.
  • the semiconductor light emitting device has a closed loop shape in which the outer second connection electrode 73 is partially turned off, and includes a connection branch 72 protruding from the first connection electrode 71, and a third opening 67. Is substantially the same as the semiconductor light emitting device described with reference to FIGS. 3 to 8 except that is formed corresponding to the connecting branch 72, and the area of the first electrode 81 is smaller than the area of the second electrode 85. Same as Therefore, duplicate descriptions are omitted.
  • the outer second connection electrode 73 has a closed loop shape in which part thereof is turned off, and the first connection electrode 71 has a closed loop shape inside the outer second connection electrode 73.
  • the connection branch 72 protrudes from the first connection electrode 71 and extends between the strings of the outer second connection electrode 73.
  • the second electrode 85 is formed to cover the inner second connection electrode 75.
  • the first electrode 81 has a smaller area than the second electrode 85 at one edge of the insulating layer 95 where the connecting branch 72 is located.
  • the first electrode 81 is electrically connected to the connecting branch 72 through the third opening 67. As such, the areas of the first electrode 81 and the second electrode 85 may be changed as necessary, and if necessary, electrical connection may be made by adding the connection branch 72.
  • the second electrode 85 and the first electrode 81 may function as a heat sink. Since the second electrode 85 covers the inner region 5, the second electrode 85 may be more advantageous in improving the heat radiation efficiency in the inner region 5.
  • FIG. 10 is a view for explaining another example of the semiconductor light emitting device according to the present disclosure.
  • the semiconductor light emitting device includes a point in which two first connection electrodes 71 and 78 and two second connection electrodes 73 and 76 are alternately arranged, a point having a closed loop shape in which some of the connection electrodes are turned off, 3 to 8, except that the first connecting branch 72 and the second connecting branch 74 are included and the areas of the first electrode 81 and the second electrode 85 are different from each other. It is substantially the same as a semiconductor light emitting element. Therefore, duplicate descriptions are omitted.
  • the first connection electrode includes an inner first connection electrode 78 and an outer first connection electrode 71.
  • the second connection electrode includes an inner second connection electrode 76 and an outer second connection electrode 73.
  • the inner first connecting electrode 78, the inner second connecting electrode 76, the outer first connecting electrode 71 and the outer second connecting electrode 73 are arranged from the inside.
  • the inner second connection electrode 76 and the outer first connection electrode 71 have a closed loop shape.
  • the first connection branch 72 connects the inner first connection electrode 78 and the outer first connection electrode 71 between the inner and second connection electrodes 76.
  • the second connection branch 74 connects the inner second connection electrode 76 and the outer second connection electrode 73 through the strings of the outer first connection electrode 71. Therefore, the inner first connection electrode 78 and the outer first connection electrode 71 are connected to each other, and the inner second connection electrode 76 and the outer second connection electrode 73 are connected to each other.
  • the position at which the third opening 67 and the fourth opening 69 are formed can be freely selected and the number of the first and second openings 67 and 69 can be reduced. It is more free to design the position, area, etc. of the two-electrode 85.
  • the first electrode 81 is formed at one corner of the insulating layer 95 with a smaller area than the second electrode 85.
  • FIG. 11 is a view for explaining another example of the semiconductor light emitting device according to the present disclosure.
  • the reflective layer 60 is formed of a conductive reflective film, a separate insulating film 62 is introduced, and the insulating layer 95 is a dielectric film 91b, a distributed Bragg reflector 91a and a clad film 91c. Except for including a substantially the same as the semiconductor light emitting device described in Figures 3 to 8. Therefore, duplicate descriptions are omitted.
  • the reflective layer 60 is made of a conductive reflective film.
  • An insulating layer 62 is insulated from the reflective layer 60 and the first connection electrode 71.
  • the insulating layer 91 includes a dielectric film 91b covering the first connection electrode 71 and the second connection electrodes 73 and 75, a distributed Bragg reflector 91a, and a clad film 91c.
  • FIG. 12 is a view for explaining another example of the semiconductor light emitting device according to the present disclosure.
  • the semiconductor light emitting device has an inner second connection electrode 75 having a plate shape, covering the inner region 5, and an additional first connection electrode connecting the plurality of first openings 63 in a closed loop shape. 77 and an additional second connection electrode 79 connecting the plurality of second openings 65 in a closed loop shape substantially with the semiconductor light emitting device described with reference to FIGS. 3 to 8. same. Therefore, duplicate descriptions are omitted.
  • the semiconductor light emitting device may further include closed loop connection electrodes 77 and 79 to obtain uniform current distribution.
  • closed loop connection electrodes 77 and 79 are effective when applied to a large size semiconductor light emitting device in which a temperature difference between the inner region and another region may be further required. That is, by not providing an opening for the electrical connection in the inner region it is possible to reduce the heat generation to obtain a temperature difference reducing effect.
  • FIG. 13 is a view for explaining another example of the semiconductor light emitting device according to the present disclosure.
  • the number of connection electrodes is reduced, the point at which the first connection electrode 71 covering the inner region 5 is located on the innermost side, and the closed loop shape outside the first connection electrode 71 are formed. It is substantially the same as the semiconductor light emitting device described with reference to FIGS. 3 to 8 except that the second connection electrode 73 is positioned. Therefore, duplicate descriptions are omitted.
  • connection electrodes When the size of the semiconductor light emitting device is small, the uniformity of the current distribution and the heat dissipation of the inner region can be achieved by only two connection electrodes.
  • the structure which has the 1st connection electrode 71 in the innermost side and the 2nd connection electrode 73 of the closed-loop shape is located in the outer side is possible.
  • the second connection electrode it is also possible for the second connection electrode to be positioned at the innermost side and the first connection electrode having a closed loop shape at the outer side.
  • FIG 14 illustrates another example of the semiconductor light emitting device according to the present disclosure.
  • an ohmic contact between the first connection electrode 71 and the first semiconductor layer 30 and an ohmic contact layer 52 are added to correspond to the second opening 63 on the transparent conductive film 60. It is substantially the same as the semiconductor light emitting device described in FIGS. 3 to 8 except that layer 56 is added.
  • the first connection electrode 71 leads to the first opening 63 to contact the ohmic contact layer 56, and the second connection electrode 73. 75 to the second opening 65 to lead to the ohmic contact layer 52. Is in contact with.
  • an ohmic metal Cr, Ti, etc.
  • the ohmic contact layers 52 and 56 lower the operating voltage of the semiconductor light emitting device.
  • a light absorption prevention film or a current block layer may be added between the second semiconductor layer 50 and the transparent conductive film 60 in correspondence with the ohmic contact layer 52.
  • 15 is a view for explaining an example of a semiconductor light emitting device according to the present disclosure.
  • the semiconductor light emitting device includes a substrate 10, a plurality of semiconductor layers, a reflective layer 91, a first connection electrode 71, a second connection electrode 75, a first electrode 81, and a second electrode 85. do.
  • FIG. 15 is a view for explaining a section taken along the line A-A of FIG. 20.
  • the group III nitride semiconductor light emitting element will be described as an example.
  • Sapphire, SiC, Si, GaN and the like are mainly used as the substrate 10, and the substrate 10 may be finally removed.
  • the plurality of semiconductor layers may include a buffer layer 20 formed on the substrate 10, a first semiconductor layer 30 having a first conductivity (for example, Si-doped GaN), and a second semiconductor layer having a second conductivity different from the first conductivity. (Eg, Mg-doped GaN) and an active layer 40 interposed between the first semiconductor layer 30 and the second semiconductor layer 50 to generate light through recombination of electrons and holes (eg, InGaN / ( In) GaN multi-quantum well structure).
  • Each of the semiconductor layers 30, 40, and 50 may be formed in multiple layers, and the buffer layer 20 may be omitted.
  • the reflective layer 91 reflects light from the active layer 40 toward the plurality of semiconductor layers 30, 40, and 50.
  • the reflective layer 91 is formed of a non-conductive reflective film to reduce light absorption by the metal reflective film.
  • the reflective layer 91 includes, for example, a distributed Bragg reflector 91a, a dielectric film 91b and a clad film 91c.
  • the dielectric film 91b or the clad film 91c may be omitted.
  • the distributed Bragg reflector 91a is nonconductive
  • the entirety of the dielectric film 91b, the distributed Bragg reflector 91a and the clad film 91c function as the nonconductive reflecting film 91.
  • the distribution Bragg reflector 91a reflects light from the active layer 40 toward the substrate 10 side.
  • the distribution Bragg reflector 91a is preferably formed of a light transmitting material (eg, SiO 2 / TiO 2) to prevent absorption of light.
  • the dielectric film 91b is positioned between the plurality of semiconductor layers 30, 40, and 50 and the distribution Bragg reflector 91a, and the dielectric film (for example, SiO 2 ) having a refractive index smaller than the effective refractive index of the Distribution Bragg reflector 91a. It may be made of.
  • the effective refractive index refers to the equivalent refractive index of light that can travel in a waveguide made of materials having different refractive indices.
  • the dielectric film 91b may also help reflection of light, and may also function as an insulating film electrically blocking the first connection electrode 71 from the second semiconductor layer 50 and the active layer 40.
  • the clad film 91c is formed on the distribution Bragg reflector 91a, and the clad film 91c is also a material lower than the effective refractive index of the distribution Bragg reflector 91a (eg, Al 2 O 3, SiO 2, SiON, MgF, CaF). It can be made of).
  • a large portion of light generated in the active layer 40 is reflected by the dielectric film 91b and the distributed Bragg reflector 91a toward the first semiconductor layer 30.
  • the relationship between the dielectric film 91b, the distributed Bragg reflector 91a, and the clad film 91c can be described in terms of an optical waveguide.
  • the optical waveguide is a structure that guides the light by using total reflection by surrounding the light propagation part with a material having a lower refractive index. From this point of view, when the distributed Bragg reflector 91a is viewed as the propagation section, the dielectric film 91b and the clad film 91c surround the propagation section and can be viewed as part of the optical waveguide.
  • the reflective layer 91 is formed with at least one first opening 63, a plurality of second openings 5, 7 and a plurality of third openings 65 used as electrical connection passages.
  • the plurality of first openings 63 are formed up to a part of the reflective layer 91, the second semiconductor layer 50, the active layer 40, and the first semiconductor layer 30, and the plurality of second openings 5 are formed.
  • 7 is formed through the reflective layer 91, and a plurality of third openings 65 are formed near the edge (see FIG. 20).
  • the plurality of second openings 5, 7 comprises an internal opening 5 and at least two peripheral openings 7 located around the internal opening.
  • the plurality of second openings 5, 7 in this example comprises one inner opening 5 and four peripheral openings 7.
  • the inner opening 5 and the peripheral opening 7 are passages for hole supply.
  • the inner opening 5 is located approximately in the center of the semiconductor light emitting element, and the first electrode 81 And between the second electrode 85.
  • the inner opening 5 and the peripheral opening 7 are described further below.
  • the first connection electrode 71 and the second connection electrode 75 are formed on the reflective layer 91, for example, on the clad film 91c.
  • the first connection electrode 71 extends into the plurality of first openings 63 to be electrically connected to the first semiconductor layer 30.
  • the second connection electrode 75 is electrically connected to the second semiconductor layer 50 through the plurality of second openings 5 and 7.
  • the inner opening 5 and the plurality of peripheral openings 7 are electrically connected by the second connection electrode 75.
  • the second connection electrode 75 has a quadrangular plate shape as shown in FIG. 20 and covers the inner opening 5 and the plurality of peripheral openings 7.
  • the first connection electrode 71 is formed in a closed loop shape so as to surround the second connection electrode 75.
  • the semiconductor light emitting device includes a third connection electrode 73.
  • the third connection electrode 73 supplies holes to the second semiconductor layer through the third opening 65.
  • the third connection electrode 73 is positioned outside the second connection electrode 75 to connect the plurality of third openings 65 in a closed loop shape.
  • the semiconductor light emitting device may include a conductive film 60 between the plurality of semiconductor layers 30, 40, 50 and the reflective layer 91, for example, between the second semiconductor layer 50 and the dielectric film 91b.
  • the conductive layer 60 may be formed of a current diffusion electrode (ITO, etc.), an ohmic metal layer (Cr, Ti, etc.), a reflective metal layer (Al, Ag, etc.), or a combination thereof.
  • the conductive film 60 is preferably made of a light transmissive conductive material (eg, ITO).
  • the second connection electrode 75 and the third connection electrode 73 are connected to the conductive layer 60 by connecting to the plurality of second openings 5 and 7 and the plurality of third openings 65, respectively.
  • the dielectric film 91b extends between the conductive film 60 and the distributed Bragg reflector 91a to the inner surface of the first opening 63, thereby connecting the first connection electrode 71 to the second semiconductor layer 50.
  • the active layer 40 and the second connection electrode 75 may be formed between the dielectric film 91b and the conductive film 60.
  • the inner opening 5 of the plurality of second openings 5, 7 functions to further increase light emission as compared to the case where there is no inner opening 5 in the local area in which the inner opening 5 is located. This is further described below.
  • the number, spacing, and arrangement of the first openings 63, the second openings 5, 7, and the third openings 65 are used for the size of the semiconductor light emitting device, the current spreading and the uniform current supply, and the uniformity of the light emission. Can be adjusted appropriately.
  • One or more inner openings 5 may be formed differently from those shown in FIG. 20.
  • the plurality of peripheral openings 7, the plurality of first openings 63, and the plurality of inner openings 5 are based on the inner opening 5.
  • the third opening 65 of is formed symmetrically.
  • a current is supplied through the plurality of first openings 63 and the plurality of second openings 5, 7, and when the current is nonuniform, some of the first openings 63 and the second openings 5, 7 are supplied. This can be biased, which can lead to deterioration in locations where current is biased in the long run.
  • the first connection electrode 71 is formed in a closed loop shape to surround the second connection electrode 75, and the third connection electrode 73 also surrounds the second connection electrode 75 and has a closed loop shape.
  • the closed loop shape is not limited to the complete closed loop shape but also includes a closed loop shape (see FIG. 22) with a part of which is closed.
  • the closed loop shape may have a shape along the outer shape of the light emitting surface of the semiconductor light emitting device to improve the uniformity of the current distribution.
  • the electrical opening to the inner opening 5 may be difficult or another complicated design may be considered, so in this example the inner opening 5 is used.
  • the plurality of peripheral openings 7 become currents having the same polarity, that is, hole supply passages.
  • the plurality of semiconductor layers 30, 40, 50 under the second connection electrode 75 Is expected to be smaller than the electron density in the plurality of semiconductor layers 30, 40, 50 outside the second connection electrode 75.
  • the inner opening 5 inside the second connection electrode 75 while the second openings 5, 7 and the plurality of third openings 65 achieve an improved uniform current distribution in a closed loop shaped arrangement and a symmetrical arrangement. ) May be maintained or increased.
  • a suitable value of the area of the second connection electrode 75 or the distance between the inner opening 5 and the peripheral opening 7 can be found. For example, as the distance between the inner opening 5 and the peripheral opening 7 increases, the area of the second connection electrode 75 increases and the area of which the hole density is relatively high increases. If the area of the second connection electrode 75 is increased, the hole supply can be made larger. In order to maintain the light emitting performance of the semiconductor light emitting device, it is preferable that the temperature difference between the positions on the light emitting surface is small. If the area of the second connection electrode 75 is increased, the number of electrical connections with the second electrode 85 to be described later may be further increased, and may be more advantageous for heat dissipation through the second electrode 85.
  • the area of the second connection electrode 75 when the area of the second connection electrode 75 is increased, a region having a relatively high hole density on the light emitting surface increases, which may not be good in terms of uniformity.
  • the extent to which the holes attract electrons to emit light may be influenced by the area of the second connection electrode 75 or the distance and number of the inner opening 5 and the peripheral opening 7. Therefore, it is possible to determine the area of the second connection electrode 75 or the distance and the number of the peripheral opening 7 and the area of the second connection electrode 75 by selecting which advantage to select in the design of the semiconductor light emitting device.
  • the semiconductor light emitting device includes an insulating layer 95 covering the first connection electrode 71, the second connection electrode 75, and the third connection electrode 73 on the reflective layer 91. At least one fourth opening 67, at least one fifth opening 68, and at least one sixth opening 69 are formed in the insulating layer 95. Insulating layer 95 may be formed of SiO 2.
  • the first electrode 81 and the second electrode 85 are formed on the insulating layer 95.
  • the first electrode 81 is electrically connected to the first connection electrode 71 through at least one fourth opening 67 to supply electrons to the first semiconductor layer 30.
  • the second electrode 85 is electrically connected to the second connection electrode 75 through the fifth opening 68, and is electrically connected to the third connection electrode 73 through the sixth opening 69. Holes are supplied to the semiconductor layer 50.
  • the first electrode 81 and the second electrode 85 may be electrodes for eutectic bonding.
  • the semiconductor light emitting device reduces light absorption by using a non-conductive reflecting film including a distribution Bragg reflector 91a instead of a metal reflecting film.
  • a plurality of first openings 63, a plurality of second openings 5, 7, and a plurality of third openings 65 are formed to facilitate current diffusion into the plurality of semiconductor layers 30, 40, and 50. Let's do it.
  • current is supplied to the first connection electrode 71 or the third connection electrode 73 in the closed loop shape more evenly, thereby preventing deterioration due to current bias.
  • by forming the inner opening 5 covered by the innermost second connection electrode 75 light emission is maintained or increased in the inner region.
  • 16 to 20 illustrate an example of a method of manufacturing a semiconductor light emitting device according to the present disclosure.
  • a plurality of semiconductor layers 30, 40, 50 are grown on the substrate 10.
  • a buffer layer eg, AlN or GaN buffer layer
  • an undoped semiconductor layer eg, un-doped GaN
  • a first semiconductor layer 30 having a first conductivity eg Si-doped GaN
  • an active layer 40 InGaN / (In) GaN multi-quantum well structure
  • a second semiconductor layer 50 eg, Mg-doped GaN having a second conductivity different from the first conductivity is grown.
  • the buffer layer 20 may be omitted, and each of the semiconductor layers 30, 40, and 50 may be formed in multiple layers.
  • the first semiconductor layer 30 and the second semiconductor layer 50 may be formed with opposite conductivity, but are not preferable in the case of a group III nitride semiconductor light emitting device.
  • the conductive film 60 is formed on the second semiconductor layer 50.
  • the conductive layer 60 may be formed of a light transmissive conductor (eg, ITO) to reduce light absorption. Although the conductive film 60 may be omitted, it is generally provided to spread the current to the second semiconductor layer 50.
  • ITO light transmissive conductor
  • the reflective layer 91 is formed on the conductive film 60.
  • the dielectric film 91b, the distributed Bragg reflector 91a, and the clad film 91c covering the conductive film 60 are formed.
  • the dielectric film 91b or the clad film 91c may be omitted.
  • the distributed Bragg reflector 91a is formed by stacking a pair of SiO 2 and TiO 2 a plurality of times, for example.
  • the distribution Bragg reflector 91a may be formed of a combination of a high refractive index material such as Ta 2 O 5 , HfO, ZrO, SiN, and a dielectric thin film (typically SiO 2 ) having a lower refractive index.
  • a high refractive index material such as Ta 2 O 5 , HfO, ZrO, SiN
  • a dielectric thin film typically SiO 2
  • the distribution Bragg reflector 91a is composed of TiO 2 / SiO 2 , it is preferable to perform an optimization process in consideration of the incident angle and reflectance according to the wavelength based on an optical thickness of 1/4 of the wavelength of the light emitted from the active layer.
  • the thickness of each layer does not necessarily have to conform to the optical thickness of 1/4 of the wavelength.
  • the number of combinations is suitable for 4 to 20 pairs.
  • the effective refractive index of the distribution Bragg reflector 91a is larger than the refractive index of the dielectric film 91b for the reflection and guide of light.
  • the dielectric film 91b may be made of SiO 2 , and the thickness thereof is appropriately 0.2um to 1.0um. Prior to the deposition of the distributed Bragg reflector 91a requiring precision, by forming the dielectric film 91b having a predetermined thickness, the distributed Bragg reflector 91a can be stably manufactured and can also help reflection of light. .
  • a clad layer (91c) may be formed of a dielectric film (91b), material of MgF, CaF, such as a metal oxide, SiO 2, SiON, such as Al 2 O 3.
  • the clad film 91c may also be formed of SiO 2 having a refractive index of 1.46 smaller than the effective refractive index of the distribution Bragg reflector 91a.
  • the clad film 91c is positioned below It is preferable to be thicker than [lambda] / 4n so as to be differentiated from the top layer of the Bragg reflector 91a.
  • the clad film 91c is not only burdened with the subsequent steps of forming the plurality of first openings 63 and the plurality of second openings 5, 7 but also because the increase in thickness does not contribute to the improvement of efficiency and only the material cost can be increased. ) Is not too thick beyond 3.0um.
  • the maximum value of the clad film 91c is formed within 1 ⁇ m to 3 ⁇ m. It will be advisable to be. However, in some cases, it is not impossible to form more than 3.0um.
  • the distribution Bragg reflector 91a and the first connection electrode 71, the second connection electrode 75, and the third connection electrode 73 are in direct contact with each other, a part of the light traveling through the distribution Bragg reflector 91a Absorption may occur by the first connection electrode 71, the second connection electrode 75, and the third connection electrode 73. Therefore, by introducing the clad film 91c and the dielectric film 91b having a lower refractive index than the distribution Bragg reflector 91a as described above, the amount of light absorption can be greatly reduced.
  • a case in which the dielectric film 91b is omitted may be considered, which is not preferable from the viewpoint of the optical waveguide, but from the viewpoint of the overall technical idea of the present disclosure, it is composed of the distributed Bragg reflector 91a and the clad film 91c. There is no reason to rule out this. Instead of the distribution Bragg reflector 91a, one may consider the case where the dielectric film 91b made of TiO 2 is used as the dielectric material. In the case where the distribution Bragg reflector 91a is provided with the SiO 2 layer on the uppermost layer, the case where the clad film 91c is omitted may also be considered.
  • the dielectric film 91b, the distributed Bragg reflector 91a, and the clad film 91c serve as an optical waveguide as a non-conductive reflecting film, and preferably have a total thickness of 1 to 8 um.
  • the plurality of first openings 63 and the plurality of second openings 5 are formed in the reflective layer 91 by, for example, dry etching or wet etching, or a combination thereof. 7 and a plurality of third openings 65 are formed.
  • the first opening 63 is formed to the reflective layer 91, the second semiconductor layer 50, the active layer 40, and a portion of the first semiconductor layer 30.
  • the second openings 5, 7 and the third opening 65 are formed to penetrate the reflective layer 91 to expose a portion of the conductive film 60.
  • the first opening 63, the second openings 5, 7 and the third opening 65 may be formed after the formation of the reflective layer 91, but alternatively, before the conductive film 60 is formed or the conductive film 60 is formed. After the formation, the first openings 63 are partially formed in the plurality of semiconductor layers 30, 40, and 50, and the reflective layers 91 are formed to cover the first openings 63, and then further penetrate the reflective layers 91.
  • the first opening 63 can be formed through the process of, and the second openings 5, 7 and the third opening 65 can be formed simultaneously with the further process or in another process.
  • the first connection electrode 71, the second connection electrode 75, and the third connection electrode 73 are formed on the reflective layer 91.
  • the first connection electrode 71, the second connection electrode 75, and the third connection electrode 73 may be deposited using sputtering equipment, E-beam equipment, or the like.
  • the first connection electrode 71, the second connection electrode 75, and the third connection electrode 73 may be formed using Cr, Ti, Ni, or a combination thereof for stable electrical contact.
  • the same reflective metal layer may be included.
  • the first connection electrode 71 may be formed to contact the first semiconductor layer 30 through the plurality of first openings 63, and the second connection electrode 75 may include the plurality of second openings 5 and 7. ),
  • the third connection electrode 73 may be formed to contact the conductive layer 60 through the plurality of third openings 65.
  • an insulating layer 95 is formed to cover the first connection electrode 71, the second connection electrode 75, and the third connection electrode 73.
  • Representative material of the insulating layer 95 is SiO 2 , without being limited thereto, SiN, TiO 2 , Al 2 O 3 , Su-8 and the like may be used.
  • at least one fourth opening 67, at least one fifth opening 68, and at least one sixth opening 69 are formed in the insulating layer 95.
  • the first electrode 81 and the second electrode 85 may be deposited on the insulating layer 95 using sputtering equipment, E-beam equipment, or the like.
  • the first electrode 81 is connected to the first connection electrode 71 through at least one fourth opening 67
  • the second electrode 85 is at least one fifth opening 68 and at least one agent. It is connected to the second connection electrode 75 and the third connection electrode 73 through the six opening 69.
  • the first electrode 81 and the second electrode 85 may be electrically connected to electrodes provided outside (package, COB, submount, etc.) by a method such as stud bump, conductive paste, and eutectic bonding.
  • a method such as stud bump, conductive paste, and eutectic bonding.
  • the semiconductor light emitting device according to the present example since the first electrode 81 and the second electrode 85 can be formed on the insulating layer 95 by the same process, there is almost no height difference between the two electrodes. Thus there is an advantage in the case of eutectic bonding.
  • the uppermost portions of the first electrode 81 and the second electrode 85 are eutectic bonding such as Au / Sn alloy and Au / Sn / Cu alloy. It can be formed of a material.
  • 21 is a view for explaining another example of the semiconductor light emitting device according to the present disclosure.
  • the semiconductor light emitting device is substantially the same as the semiconductor light emitting device described with reference to FIGS. 15 to 20 except for the shape of the second connection electrode 75. Therefore, duplicate descriptions are omitted.
  • the second connection electrode 75 may include a closed loop shaped branch connecting the plurality of peripheral openings 7 and a connecting branch 8 connecting the inner opening 5 and the plurality of peripheral openings 7. have. As the area of the second connection electrode 75 is reduced, the light absorption amount may be reduced.
  • FIG. 22 is a diagram illustrating still another example of the semiconductor light emitting device according to the present disclosure
  • FIG. 23 is a diagram illustrating a cross section taken along line B-B in FIG. 22.
  • the first connection electrode 71 supplies holes
  • the second connection electrode 75 and the third connection electrode 73 supply electrons
  • the second connection electrode 75 is a closed loop.
  • a point having a shape, the point where the inner opening 5 is not directly connected to the peripheral opening 7, but electrically connected by the second electrode 85, and the second electrode 85 is the insulating layer 95.
  • the inner region has a relatively high electron density, so that light emission can be maintained or improved in the inner region by attracting holes from other regions to recombine them.
  • the area of the first electrode 81 and the second electrode 85 may be changed as necessary, and a connection branch 72 may be added for electrical connection.
  • 24 is a view for explaining another example of the semiconductor light emitting device according to the present disclosure.
  • the semiconductor light emitting device includes an additional first connection electrode 77 connecting the plurality of first openings 63 in a closed loop shape, and an additional third connection connecting the plurality of third openings 65 in a closed loop shape. It is substantially the same as the semiconductor light emitting device described in FIGS. 15 to 20 except for including the electrode 79. Therefore, duplicate descriptions are omitted.
  • the semiconductor light emitting device When the semiconductor light emitting device increases in size, such as a large area and a high-power light emitting device, the semiconductor light emitting device may further include closed loop connection electrodes 77 and 79 to obtain uniform current distribution. In such a large area semiconductor light emitting device, a high brightness is required. Therefore, the semiconductor light emitting device according to the present disclosure, which maintains and increases light emission in the inner region by providing the inner opening 5, can be well applied to a large area semiconductor light emitting device.
  • 25 is a view for explaining another example of the semiconductor light emitting device according to the present disclosure.
  • the semiconductor light emitting device is substantially the same as the semiconductor light emitting device described with reference to FIGS. 15 to 20 except that the third connection electrode is deleted and the number of the first openings 63 connected by the first connection electrode is increased. Same as Therefore, duplicate descriptions are omitted.
  • the uniformity of the current distribution can be achieved only by the two connecting electrodes 71 and 73, and the inner opening 5 is provided in the inner region in order to emit light as much as the light emitting area is small.
  • the maintenance or increase of luminescence can be achieved.
  • 26 illustrates another example of the semiconductor light emitting device according to the present disclosure.
  • an ohmic contact between the first connection electrode 71 and the first semiconductor layer 30 and an ohmic contact layer 52 are added to correspond to the second opening 63 on the transparent conductive film 60. It is substantially the same as the semiconductor light emitting device described in FIGS. 15 to 20 except that layer 56 is added.
  • the first connection electrode 71 leads to the first opening 63 to contact the ohmic contact layer 56, and the second connection electrode 73. 75 to the second opening 65 to lead to the ohmic contact layer 52. Is in contact with.
  • an ohmic metal Cr, Ti, etc.
  • the ohmic contact layers 52 and 56 lower the operating voltage of the semiconductor light emitting device.
  • a light absorption prevention film or a current block layer may be added between the second semiconductor layer 50 and the transparent conductive film 60 in correspondence with the ohmic contact layer 52.
  • FIG. 27 is a view for explaining an example of a semiconductor light emitting device according to the present disclosure.
  • the semiconductor light emitting device includes a substrate 10, a plurality of semiconductor layers, a reflective layer 91, a first connection electrode 71, a second connection electrode 73, a third connection electrode 75, a first electrode 81, and The second electrode 85 is included. It is a figure explaining the cross section cut along the A-A line of FIG. Hereinafter, the group III nitride semiconductor light emitting element will be described as an example.
  • Sapphire, SiC, Si, GaN and the like are mainly used as the substrate 10, and the substrate 10 may be finally removed.
  • the plurality of semiconductor layers may include a buffer layer 20 formed on the substrate 10, a first semiconductor layer 30 having a first conductivity (for example, Si-doped GaN), and a second semiconductor layer having a second conductivity different from the first conductivity. (Eg, Mg-doped GaN) and an active layer 40 interposed between the first semiconductor layer 30 and the second semiconductor layer 50 to generate light through recombination of electrons and holes (eg, InGaN / ( In) GaN multi-quantum well structure).
  • Each of the semiconductor layers 30, 40, and 50 may be formed in multiple layers, and the buffer layer 20 may be omitted.
  • the reflective layer 91 reflects light from the active layer 40 toward the plurality of semiconductor layers 30, 40, and 50.
  • the reflective layer 91 is formed of a non-conductive reflective film to reduce light absorption by the metal reflective film.
  • the reflective layer 91 includes, for example, a distributed Bragg reflector 91a, a dielectric film 91b and a clad film 91c.
  • the dielectric film 91b or the clad film 91c may be omitted.
  • the distributed Bragg reflector 91a is nonconductive
  • the entirety of the dielectric film 91b, the distributed Bragg reflector 91a and the clad film 91c function as the nonconductive reflecting film 91.
  • the distribution Bragg reflector 91a reflects light from the active layer 40 toward the substrate 10 side.
  • the distribution Bragg reflector 91a is preferably formed of a light transmitting material (eg, SiO 2 / TiO 2) to prevent absorption of light.
  • the dielectric film 91b is positioned between the plurality of semiconductor layers 30, 40, and 50 and the distribution Bragg reflector 91a, and the dielectric film (for example, SiO 2 ) having a refractive index smaller than the effective refractive index of the Distribution Bragg reflector 91a. It may be made of.
  • the effective refractive index refers to the equivalent refractive index of light that can travel in a waveguide made of materials having different refractive indices.
  • the dielectric film 91b may also help reflection of light, and may also function as an insulating film electrically blocking the first connection electrode 71 from the second semiconductor layer 50 and the active layer 40.
  • a large portion of light generated in the active layer 40 is reflected by the dielectric film 91b and the distributed Bragg reflector 91a toward the first semiconductor layer 30.
  • the relationship between the dielectric film 91b, the distributed Bragg reflector 91a, and the clad film 91c can be described in terms of an optical waveguide.
  • the optical waveguide is a structure that guides the light by using total reflection by surrounding the light propagation part with a material having a lower refractive index. From this point of view, when the distributed Bragg reflector 91a is viewed as the propagation section, the dielectric film 91b and the clad film 91c surround the propagation section and can be viewed as part of the optical waveguide.
  • a plurality of first openings 63 and a plurality of second openings 65 used as electrical connection passages are formed (see FIGS. 31 and 32).
  • the plurality of first openings 63 are formed up to a part of the reflective layer 91, the second semiconductor layer 50, the active layer 40, and the first semiconductor layer 30, and the plurality of second openings 65. ) Is formed through the reflective layer 91.
  • the first connection electrode 71 connects the plurality of first openings 63, and supplies electrons to the first semiconductor layer 30 through the plurality of first openings 63.
  • the second connection electrode 73 connects the plurality of second openings 65 from the outside of the first connection electrode 71, and holes are formed in the second semiconductor layer 50 through the plurality of second openings 65. Supply.
  • the third connection electrode 75 connects the plurality of second openings 65 to the inside of the first connection electrode 71 and holes the second semiconductor layer 50 through the plurality of second openings 65. Supply.
  • the plurality of second openings 65 connected by the second connection electrodes 73 are arranged in a plurality of arrays for improving current spreading and improving uniformity of current distribution.
  • the plurality of second openings 65 connected by the second connection electrode 73 are arranged in the first column AR1 and the second column AR2 (see FIG. 31).
  • the array in which the plurality of second openings 65 are arranged is an imaginary line for explaining the form in which the plurality of second openings 65 are arranged. The arrangement of the second openings 65 is described further below.
  • the semiconductor light emitting device may include a conductive film 60 between the plurality of semiconductor layers 30, 40, 50 and the reflective layer 91, for example, between the second semiconductor layer 50 and the dielectric film 91b.
  • the conductive layer 60 may be formed of a current diffusion electrode (ITO, etc.), an ohmic metal layer (Cr, Ti, etc.), a reflective metal layer (Al, Ag, etc.), or a combination thereof.
  • the conductive film 60 is preferably made of a light transmissive conductive material (eg, ITO).
  • the second connection electrode 73 and the third connection electrode 75 extend to the plurality of second openings 65 to be electrically connected to the conductive film 60.
  • the dielectric film 91b extends between the conductive film 60 and the distributed Bragg reflector 91a to the inner surface of the first opening 63, thereby connecting the first connection electrode 71 to the second semiconductor layer 50. ) And insulated from the active layer 40.
  • another separate insulating film may be formed between the dielectric film 91b and the conductive film 60.
  • a current is supplied through the plurality of first openings 63 and the plurality of second openings 65, and if the current is nonuniform, some of the first openings 63 and the second openings 65 may be biased. As a result, deterioration may occur at a position where current is biased in the long term.
  • the plurality of second openings 65 may be formed in consideration of current diffusion in the second semiconductor layer 50.
  • a second connection electrode 73 and a third connection electrode 75 connecting the plurality of second openings 65 may be designed.
  • the third connection electrode 75 for hole supply is positioned at the innermost side
  • the second semiconductor layer 50 is disposed at the outermost side with the second connection electrode 73 for hole supply. It may be better to distribute the passages for the hole supply to the inner and outer sides of the entire light emitting surface.
  • the configuration of disposing the first connection electrode 71 for the electron supply at the innermost side need not be excluded.
  • the first connection electrode 71, the second connection electrode 73, the third connection electrode 75, the plurality of first openings 63, and the plurality of second openings may be used to improve the uniformity of the current distribution.
  • 65 are arranged symmetrically.
  • at least one of the first connection electrode 71, the second connection electrode 73, and the third connection electrode 75 preferably has a loop shape.
  • the first connection electrode 71 and the second connection electrode 73 have a closed loop shape
  • the third connection electrode 75 has a square plate shape as shown in FIG. 32.
  • the second connection electrode 73 is located outside the first connection electrode 71
  • the third connection electrode 75 is located inside the first connection electrode 71.
  • the closed loop shape is not limited to the complete closed loop shape, but also includes a closed loop shape in which a part is turned off.
  • it is geometrically symmetrical, which is very advantageous for improving the uniformity of the current supply and consequently the uniformity of the current density in the light emitting surface.
  • It may be better for the closed loop shape to have a shape along the outer shape of the light emitting surface of the semiconductor light emitting device to improve the uniformity of the current distribution.
  • the first openings 63 may be arranged at uniform intervals along the first connection electrode 71 having a closed loop shape.
  • the plurality of second openings 65 connected by the third connecting electrode 75 includes an internal opening 5 and a plurality of peripheral openings 7 around the inner opening 5.
  • the inner opening 5 is located approximately in the center of the semiconductor light emitting element, and is located between the first electrode 81 and the second electrode 85.
  • the plurality of peripheral openings 7 may be arranged to correspond respectively between the plurality of first openings 63. Alternatively the inner opening 5 may be deleted.
  • the first connection electrode 71, the second connection electrode 73, the third connection electrode 75, the plurality of first openings 63, and the plurality of second openings based on the inner opening 5 ( 65 are arranged symmetrically.
  • the plurality of second openings 65 connected to the second connection electrode 73 for the diffusion and uniform distribution of the holes are arranged in the first column AR1 and the second column AR2 as described above. (See FIG. 31 and FIG. 32). In this way, the number and distribution area of the plurality of second openings 65 connected by the second connection electrode 73 are increased, but the plurality of second openings 65 are arranged symmetrically to improve uniformity. desirable.
  • the first column AR1 and the second column AR2 are sequentially located adjacent to the first opening 63 and are connected to the plurality of second openings 65 by the second connection electrode 73. ) May be arranged at regular intervals in the first column AR1 and the second column AR2.
  • the plurality of second openings 65 positioned in the first row AR1 are respectively located between the plurality of first openings 63, and the plurality of second openings 65 located in the second row AR2.
  • the openings 65 are respectively located corresponding to the plurality of first openings 63 (see FIGS. 31 and 32).
  • the first opening 63, two consecutive second openings 65 located in the first row AR1, and the second openings 65 located in the second row AR2 form a vertex of a rectangle.
  • the first opening 63 and the second opening 65 are not located inside the.
  • such a square pattern is also formed between the first connection electrode 71 and the third connection electrode 75, and is arranged symmetrically along the first connection electrode 71 having a closed loop shape. Increasing the number and distribution area of the second opening 65 in this way is more advantageous to improve the uniformity of the current density because it has a geometric symmetry while further improving the current diffusion of the hole.
  • the number, spacing, and arrangement of the plurality of first openings 63 and the plurality of second openings 65 may be appropriately adjusted for the size, current spreading, uniform current supply, and uniformity of light emission of the semiconductor light emitting device.
  • the square pattern may have a rhombus shape, but may have a rectangular shape other than the rhombus.
  • the second opening 65 of the second row AR2 is closer to the first row AR1 than the rhombus shape, or as shown in FIG. 33B.
  • the second column is arranged closer to the first opening 63 than the first column AR1, or the second opening 65 is further located in the square pattern as shown in FIG. 33 (c). May also be considered.
  • the symmetry is not broken, and the plurality of rows of the plurality of rows are evenly or symmetrically around the first loop electrode 71 in the closed loop shape.
  • Two openings 65 can be arranged.
  • various arrangement patterns of the plurality of second openings 65 may be considered.
  • a plurality of second openings 65 which are hole supply passages, are located in a plurality of rows outside the first connection electrode 71, and the inner opening 5 and the periphery are inside the first connection electrode 71.
  • the distribution area of the second opening 65 may be symmetrically increased from the inside to the outside of the semiconductor light emitting device by being arranged in the opening 7. Therefore, the diffusion and uniformity of the holes can be further increased, compared to the case where the plurality of second openings 65 connected by the second connection electrodes 73 are arranged in a single row, and the second openings 65 are supplied to the first openings 63.
  • a quantitative balance with the electron density or a degree of diffusion can also be better.
  • the inner opening 5 covered by the third connection electrode 75 supplies holes in the same manner as the peripheral opening 7. If the inner opening 5 is a current path of a different polarity from the plurality of peripheral openings 7, the electrical opening to the inner opening 5 may be difficult or another complicated design may be considered, so in this example the inner opening 5 is used. And the plurality of peripheral openings 7 become currents having the same polarity, that is, hole supply passages. Alternatively, when the connection electrode for electron supply is located at the innermost side, the inner opening and the peripheral opening may be the electron supply passage.
  • the number, spacing, and arrangement of the plurality of first openings 63 and the plurality of second openings 65 may be appropriately adjusted for the size, current spreading, uniform current supply, and uniformity of light emission of the semiconductor light emitting device. .
  • the semiconductor light emitting device includes an insulating layer 95 covering the first connection electrode 71, the second connection electrode 73, and the third connection electrode 75 on the reflective layer 91. At least one fourth opening 67, at least one fifth opening 68, and at least one sixth opening 69 are formed in the insulating layer 95. Insulating layer 95 may be formed of SiO 2.
  • the first electrode 81 and the second electrode 85 are formed on the insulating layer 95.
  • the first electrode 81 is electrically connected to the first connection electrode 71 through at least one fourth opening 67 to supply electrons to the first semiconductor layer 30.
  • the second electrode 85 is electrically connected to the third connection electrode 75 through the fifth opening 68, and is electrically connected to the second connection electrode 73 through the sixth opening 69. Holes are supplied to the semiconductor layer 50.
  • the first electrode 81 and the second electrode 85 may be electrodes for eutectic bonding.
  • the semiconductor light emitting device reduces light absorption by using a non-conductive reflecting film including a distribution Bragg reflector 91a instead of a metal reflecting film.
  • the plurality of first openings 63 and the plurality of second openings 65 are formed symmetrically, and the plurality of second openings 65 are arranged in a plurality of rows to form a plurality of semiconductor layers 30, 40, and 50.
  • 28 to 32 are views illustrating an example of a method of manufacturing a semiconductor light emitting device according to the present disclosure.
  • a plurality of semiconductor layers 30, 40, 50 are grown on the substrate 10.
  • a buffer layer eg, AlN or GaN buffer layer
  • an undoped semiconductor layer eg, un-doped GaN
  • a first semiconductor layer 30 having a first conductivity eg Si-doped GaN
  • an active layer 40 InGaN / (In) GaN multi-quantum well structure
  • a second semiconductor layer 50 eg, Mg-doped GaN having a second conductivity different from the first conductivity is grown.
  • the buffer layer 20 may be omitted, and each of the semiconductor layers 30, 40, and 50 may be formed in multiple layers.
  • the first semiconductor layer 30 and the second semiconductor layer 50 may be formed with opposite conductivity, but are not preferable in the case of a group III nitride semiconductor light emitting device.
  • the conductive film 60 is formed on the second semiconductor layer 50.
  • the conductive layer 60 may be formed of a light transmissive conductor (eg, ITO) to reduce light absorption. Although the conductive film 60 may be omitted, it is generally provided to spread the current to the second semiconductor layer 50.
  • ITO light transmissive conductor
  • the reflective layer 91 is formed on the conductive film 60.
  • the dielectric film 91b, the distributed Bragg reflector 91a, and the clad film 91c covering the conductive film 60 are formed.
  • the dielectric film 91b or the clad film 91c may be omitted.
  • the distributed Bragg reflector 91a is formed by stacking a pair of SiO 2 and TiO 2 a plurality of times, for example.
  • the distribution Bragg reflector 91a may be formed of a combination of a high refractive index material such as Ta 2 O 5 , HfO, ZrO, SiN, and a dielectric thin film (typically SiO 2 ) having a lower refractive index.
  • a high refractive index material such as Ta 2 O 5 , HfO, ZrO, SiN
  • a dielectric thin film typically SiO 2
  • the distribution Bragg reflector 91a is composed of TiO 2 / SiO 2 , it is preferable to perform an optimization process in consideration of the incident angle and reflectance according to the wavelength based on an optical thickness of 1/4 of the wavelength of the light emitted from the active layer.
  • the thickness of each layer does not necessarily have to conform to the optical thickness of 1/4 of the wavelength.
  • the number of combinations is suitable for 4 to 20 pairs.
  • the effective refractive index of the distribution Bragg reflector 91a is larger than the refractive index of the dielectric film 91b for the reflection and guide of light.
  • the dielectric film 91b may be made of SiO 2 , and the thickness thereof is appropriately 0.2um to 1.0um. Prior to the deposition of the distributed Bragg reflector 91a requiring precision, by forming the dielectric film 91b having a predetermined thickness, the distributed Bragg reflector 91a can be stably manufactured and can also help reflection of light. .
  • a clad layer (91c) may be formed of a dielectric film (91b), material of MgF, CaF, such as a metal oxide, SiO 2, SiON, such as Al 2 O 3.
  • the clad film 91c may also be formed of SiO 2 having a refractive index of 1.46 smaller than the effective refractive index of the distribution Bragg reflector 91a.
  • the clad film 91c is positioned below It is preferable to be thicker than [lambda] / 4n so as to be differentiated from the top layer of the Bragg reflector 91a.
  • the clad film 91c is not only burdened with the subsequent steps of forming the plurality of first openings 63 and the plurality of second openings 65, but also because the increase in thickness does not contribute to the improvement in efficiency and only the material cost can be increased. Too thick beyond 3.0 ⁇ m is undesirable.
  • the maximum value of the thickness of the clad film 91c is formed within 1 ⁇ m to 3 ⁇ m. Will be suitable. However, in some cases, it is not impossible to form more than 3.0um.
  • the distribution Bragg reflector 91a and the first connection electrode 71, the second connection electrode 73, and the third connection electrode 75 are in direct contact with each other, a part of the light traveling through the distribution Bragg reflector 91a Absorption may occur by the first connection electrode 71, the second connection electrode 73, and the third connection electrode 75. Therefore, by introducing the clad film 91c and the dielectric film 91b having a lower refractive index than the distribution Bragg reflector 91a as described above, the amount of light absorption can be greatly reduced.
  • a case in which the dielectric film 91b is omitted may be considered, which is not preferable from the viewpoint of the optical waveguide, but from the viewpoint of the overall technical idea of the present disclosure, it is composed of the distributed Bragg reflector 91a and the clad film 91c. There is no reason to rule out this. Instead of the distribution Bragg reflector 91a, one may consider the case where the dielectric film 91b made of TiO 2 is used as the dielectric material. In the case where the distribution Bragg reflector 91a is provided with the SiO 2 layer on the uppermost layer, the case where the clad film 91c is omitted may also be considered.
  • the dielectric film 91b, the distributed Bragg reflector 91a, and the clad film 91c serve as an optical waveguide as a non-conductive reflecting film, and preferably have a total thickness of 1 to 8 um.
  • the plurality of first openings 63 and the plurality of second openings 65 in the reflective layer 91 by, for example, dry etching or wet etching, or a combination thereof. ) Is formed.
  • the first opening 63 is formed to the reflective layer 91, the second semiconductor layer 50, the active layer 40, and a portion of the first semiconductor layer 30.
  • the second opening 65 is formed to penetrate the reflective layer 91 to expose a portion of the conductive film 60.
  • the first opening 63 and the second opening 65 may be formed after the formation of the reflective layer 91.
  • the plurality of semiconductor layers 30 may be formed before or after the formation of the conductive film 60.
  • the first opening 63 may be further processed through the reflective layer 91.
  • the first connection electrode 71, the second connection electrode 73, and the third connection electrode 75 are formed on the reflective layer 91.
  • the first connection electrode 71, the second connection electrode 73, and the third connection electrode 75 may be deposited using sputtering equipment, E-beam equipment, or the like.
  • the first connection electrode 71, the second connection electrode 73, and the third connection electrode 75 may be formed using Cr, Ti, Ni, or a combination thereof for stable electrical contact, and may be formed of Al or Ag.
  • the same reflective metal layer may be included.
  • the first connection electrode 71 may be formed to contact the first semiconductor layer 30 through the plurality of first openings 63, and the second connection electrode 73 and the third connection electrode 75 may be formed in plural numbers. It may be formed to contact the transparent conductive film 60 through the second opening 65 of the.
  • an insulating layer 95 is formed to cover the first connection electrode 71, the second connection electrode 73, and the third connection electrode 75.
  • Representative material of the insulating layer 95 is SiO 2 , without being limited thereto, SiN, TiO 2 , Al 2 O 3 , Su-8 and the like may be used.
  • at least one fourth opening 67, at least one fifth opening 68, and at least one sixth opening 69 are formed in the insulating layer 95.
  • the first electrode 81 and the second electrode 85 may be deposited on the insulating layer 95 using sputtering equipment, E-beam equipment, or the like.
  • the first electrode 81 is connected to the first connection electrode 71 through at least one fourth opening 67
  • the second electrode 85 is at least one fifth opening 68 and at least one agent.
  • the sixth connection 69 is connected to the third connection electrode 75 and the second connection electrode 73.
  • the first electrode 81 and the second electrode 85 may be electrically connected to electrodes provided outside (package, COB, submount, etc.) by a method such as stud bump, conductive paste, and eutectic bonding.
  • a method such as stud bump, conductive paste, and eutectic bonding.
  • the semiconductor light emitting device according to the present example since the first electrode 81 and the second electrode 85 can be formed on the insulating layer 95 by the same process, there is almost no height difference between the two electrodes. Thus there is an advantage in the case of eutectic bonding.
  • the uppermost portions of the first electrode 81 and the second electrode 85 are eutectic bonding such as Au / Sn alloy and Au / Sn / Cu alloy. It can be formed of a material.
  • 34 is a view for explaining another example of the semiconductor light emitting device according to the present disclosure.
  • the semiconductor light emitting device includes a fourth connection electrode 77 connecting the plurality of first openings 63 in a closed loop shape, and a fifth connection electrode 79 connecting the plurality of second openings 65 in a closed loop shape. And a plurality of second openings 65 connected by the second connection electrode 73 are arranged in the first column AR1, the second column AR2, and the third column AR3. Except for the semiconductor light emitting device described in Figures 27 to 32 are substantially the same. Therefore, duplicate descriptions are omitted. In FIG. 34, the first electrode and the second electrode are not shown.
  • the semiconductor light emitting device may further include closed loop connection electrodes 77 and 79 to obtain uniform current distribution.
  • One second opening 65 positioned at) forms the vertex of the first quadrangle RT1, and the first opening 63 located at the fourth connecting electrode 77 and the first opening 63 of the second connecting electrode 73.
  • Two second openings 65 located in the third row AR3 and one first opening 63 located in the second row AR2 form a vertex of the second quadrangle RT2.
  • One second opening 65 located in the first row AR1, two second openings 65 located in the second row AR2, and one second opening located in the third row AR3 ( 65 forms a vertex of the third rectangle RT3.
  • the first rectangle RT1, the second rectangle RT2, and the third rectangle RT3 have substantially the same size and shape.
  • the plurality of second openings 65 connected by the fifth connection electrode 79 are arranged in the fourth column AR4 and the fifth column AR5.
  • Square patterns such as the first to third squares RT1, RT2 and RT3 describe imaginary lines describing the arrangement of the openings 63 and 65, and in this example, the square patterns are illustrated in FIG. 34.
  • the entire light emitting surface is uniformly formed.
  • the uniform pattern of the entire light emitting surface may be referred to as a unit pattern, and the unit pattern is not limited to the quadrangle pattern and may be formed of various polygons.
  • At least one of the size and shape of the unit pattern may vary according to the area of the light emitting surface. Increasing or decreasing the size of the unit pattern or changing the shape of the unit pattern increases or decreases the density of the first opening 63 and the second opening 65 per unit area of the light emitting surface.
  • the unit pattern (square pattern in this example) is distributed at a ratio of three second openings 65 per one opening 63. As described above, if the shape of the unit pattern is changed, the ratio may be changed. Therefore, by strengthening the current diffusion of a hole with a relatively weak current diffusion it can be better balanced with the diffusion of electrons, resulting in a good effect to improve the uniformity of current distribution and maintain long-term performance.
  • the second openings 65 may be arranged in two rows or three rows or more, and more rows may be formed in a region in which hole supply is insufficient while maintaining symmetry and uniformity.
  • 35 is a view for explaining another example of the semiconductor light emitting device according to the present disclosure.
  • the second connection electrode 73 is patterned in a continuous rectangular shape, and the first connection electrode 71 and the fourth connection electrode 77 are patterned along the second connection electrode 73.
  • the first opening 63 is substantially the same as the semiconductor light emitting device described in FIG. 34 except that the first opening 63 is closer to the first column AR1 and the third column AR3. Therefore, duplicate descriptions are omitted.
  • the second opening 65 forms a vertex of the third rectangle RT3 (see FIG. 34), and the second connection electrode 73 is patterned along the shape of the third rectangle RT3.
  • the first connection electrode 71 and the fourth connection electrode 77 are also patterned along the shape of the third quadrangle RT3 facing the second connection electrode 73.
  • the connecting electrode can be efficiently arranged on the light emitting surface, and the arrangement of the first opening and the second opening arranged in the plurality of rows can be different from that shown in FIG.
  • 36 is a view for explaining another example of the semiconductor light emitting device according to the present disclosure.
  • the number of connection electrodes is reduced, the point at which the first connection electrode 71 covering the inner region is located on the innermost side, and the second connection having a closed loop shape outside the first connection electrode 71. It is substantially the same as the semiconductor light emitting device described in FIGS. 27 to 32 except that the electrode 73 is located. Therefore, duplicate descriptions are omitted. In FIG. 36, the first electrode and the second electrode are not shown.
  • connection electrodes 71 and 73 When the size of the semiconductor light emitting device is small, the uniformity of the current distribution can be achieved only by the two connection electrodes 71 and 73.
  • the structure which has the 1st connection electrode 71 inside, and the 2nd connection electrode 73 of a closed-loop shape is located in the outer side is possible.
  • the second connection electrode 73 may be located inside and the closed first loop connection electrode 71 may be located outside.
  • the plurality of second openings 65 connected by the second connection electrodes 73 are substantially in the same pattern as the plurality of second openings 65 connected by the second connection electrodes 73 described in FIG. 34. Are arranged.
  • the plurality of second openings 65 connected by the second connection electrodes 73 may be formed to be symmetrically arranged in four or more rows. In this case, it may be considered to reduce the area of the first connection electrode 71 and to increase the area of the second connection electrode 73.
  • FIG. 37 is a view for explaining another example of the semiconductor light emitting device according to the present disclosure.
  • the semiconductor light emitting device has an ohmic contact between the first connection electrode 71 and the first semiconductor layer 30 and an ohmic contact layer 52 added to correspond to the second opening 65 on the transparent conductive film 60. It is substantially the same as the semiconductor light emitting device described in FIGS. 27-32 except that layer 56 is added.
  • the first connection electrode 71 leads to the first opening 63 to contact the ohmic contact layer 56, and the second connection electrode and the third connection electrode 75 lead to the second opening 65 to lead to the ohmic contact layer. 52 is contacted.
  • an ohmic metal Cr, Ti, etc.
  • Cr, Ti, etc. may be used, may be formed of a reflective metal (Al, Ag), or the like, or a combination thereof.
  • the ohmic contact layers 52 and 56 lower the operating voltage of the semiconductor light emitting device.
  • a light absorption prevention film or a current block layer may be added between the second semiconductor layer 50 and the transparent conductive film 60 in correspondence with the ohmic contact layer 52.
  • 38 is a view for explaining an example of a semiconductor light emitting device according to the present disclosure.
  • the semiconductor light emitting device includes a substrate 10, a plurality of semiconductor layers, a current blocking layer 41, a conductive film 60, a first ohmic electrode 56, a second ohmic electrode 52, and a reflective layer 91. And a first connection electrode 71, a second connection electrode 73, a third connection electrode 75, a first electrode 81, and a second electrode 85.
  • FIG. 38 is a view for explaining a section taken along the line A-A in FIG.
  • the group III nitride semiconductor light emitting element will be described as an example.
  • Sapphire, SiC, Si, GaN and the like are mainly used as the substrate 10, and the substrate 10 may be finally removed.
  • the plurality of semiconductor layers may include a buffer layer 20 formed on the substrate 10, a first semiconductor layer 30 having a first conductivity (for example, Si-doped GaN), and a second semiconductor layer having a second conductivity different from the first conductivity. (Eg, Mg-doped GaN) and an active layer 40 interposed between the first semiconductor layer 30 and the second semiconductor layer 50 to generate light through recombination of electrons and holes (eg, InGaN / ( In) GaN multi-quantum well structure).
  • Each of the semiconductor layers 30, 40, and 50 may be formed in multiple layers, and the buffer layer 20 may be omitted.
  • the reflective layer 91 reflects light from the active layer 40 toward the plurality of semiconductor layers 30, 40, and 50.
  • the reflective layer 91 is formed of a non-conductive reflective film to reduce light absorption by the metal reflective film.
  • the reflective layer 91 includes, for example, a distributed Bragg reflector 91a, a dielectric film 91b and a clad film 91c.
  • the dielectric film 91b or the clad film 91c may be omitted.
  • the distributed Bragg reflector 91a is nonconductive
  • the entirety of the dielectric film 91b, the distributed Bragg reflector 91a and the clad film 91c function as the nonconductive reflecting film 91.
  • the distribution Bragg reflector 91a reflects light from the active layer 40 toward the substrate 10 side.
  • the distribution Bragg reflector 91a is preferably formed of a light transmitting material (eg SiO 2 / TiO 2) to prevent absorption of light.
  • the dielectric film 91b is positioned between the plurality of semiconductor layers 30, 40, and 50 and the distribution Bragg reflector 91a, and the dielectric film (for example, SiO 2 ) having a refractive index smaller than the effective refractive index of the Distribution Bragg reflector 91a. It may be made of.
  • the effective refractive index refers to the equivalent refractive index of light that can travel in a waveguide made of materials having different refractive indices.
  • the dielectric film 91b may also help reflection of light, and may also function as an insulating film electrically blocking the first connection electrode 71 from the second semiconductor layer 50 and the active layer 40.
  • the clad film 91c is formed on the distribution Bragg reflector 91a, and the clad film 91c is also a material lower than the effective refractive index of the distribution Bragg reflector 91a (eg, Al 2 O 3, SiO 2, SiON, MgF, CaF). It can be made of).
  • a large portion of light generated in the active layer 40 is reflected by the dielectric film 91b and the distributed Bragg reflector 91a toward the first semiconductor layer 30.
  • the relationship between the dielectric film 91b, the distributed Bragg reflector 91a, and the clad film 91c can be described in terms of an optical waveguide.
  • the optical waveguide is a structure that guides the light by using total reflection by surrounding the light propagation part with a material having a lower refractive index. From this point of view, when the distributed Bragg reflector 91a is viewed as the propagation section, the dielectric film 91b and the clad film 91c surround the propagation section and can be viewed as part of the optical waveguide.
  • the reflective layer 91 has a plurality of first openings 63 and a plurality of second openings 65 used as electrical connection passages.
  • a plurality of first openings 63 are formed to a part of the reflective layer 91, the second semiconductor layer 50, the active layer 40, and the first semiconductor layer 30, and the plurality of second openings 65 are the reflective layer. It is formed through 91.
  • the first connection electrode 71, the second connection electrode 73, and the third connection electrode 75 are formed on the reflective layer 91, for example, on the clad film 91c.
  • the first connection electrode 71 extends into the plurality of first openings 63 to be electrically connected to the first semiconductor layer 30.
  • the second connection electrode 73 and the third connection electrode 75 are electrically connected to the second semiconductor layer 50 through the plurality of second openings 65.
  • the first connection electrode 71, the second connection electrode 73, and the third connection electrode 75 may be formed using Cr, Ti, Ni, or a combination thereof for stable electrical contact, and may be formed of Al or Ag.
  • the same reflective metal layer may be included.
  • the conductive film 60 is formed between the plurality of semiconductor layers 30, 40, 50 and the reflective layer 91, for example, between the second semiconductor layer 50 and the dielectric film 91b. Although the conductive film 60 may be omitted, it is generally provided to spread the current to the second semiconductor layer 50.
  • the conductive film 60 is formed of a current diffusion electrode (ITO, etc.) for high light transmittance, an ohmic metal layer (Cr, Ti, etc.) is used for ohmic contact with the second semiconductor layer 50, or for high reflectance. It may be formed of a reflective metal layer (Al, Ag, etc.), or a combination thereof.
  • the conductive film 60 is preferably made of a light transmissive conductive material (eg, ITO).
  • the second connection electrode 73 and the third connection electrode 75 extend to the plurality of second openings 65 to be electrically connected to the conductive film 60.
  • the dielectric film 91b extends between the conductive film 60 and the distributed Bragg reflector 91a to the inner surface of the first opening 63, thereby connecting the first connection electrode 71 to the second semiconductor layer 50.
  • another separate insulating film may be formed between the dielectric film 91b and the conductive film 60.
  • the current blocking layer 41 is formed at a position corresponding to the plurality of second openings 65 between the second semiconductor layer 50 and the conductive film 60.
  • the current blocking layer 41 may be made of SiO 2 , TiO 2, or the like, and the current blocking layer 41 may be omitted.
  • the current blocking layer 41 prevents current from concentrating in the direction immediately below the second opening 65 to assist current spreading or current spreading and prevent deterioration of the device due to current concentration.
  • the first ohmic electrode 56 is formed on the first semiconductor layer 30 exposed through the plurality of first openings 63 and connected to the first semiconductor layer 30 and the first opening 63. 71).
  • the first ohmic electrode 56 may be formed of a combination of Cr, Ti, Al, Ag, Ni, Pt, W, Au, and the like.
  • the first ohmic electrode 56 may include a sequentially stacked ohmic contact layer (eg, Cr, Ti, etc.) / Reflective metal layer (eg, Al, Ag, etc.) / First barrier layer (eg, Ni, Cr, Ti, W, Pt, TiW, etc.) / oxide layer (eg, Au, Pt, etc.) / second barrier layer (eg, Cr, Ti, Ni, Pt, Al, etc.).
  • the ohmic contact layer is made of a metal having a small work function to make ohmic contact with the first semiconductor layer 30 (for example, n-GaN).
  • the reflective metal layer reflects light to reduce absorption loss.
  • the first barrier layer prevents diffusion between the reflective metal layer and the antioxidant layer.
  • the anti-oxidation layer prevents oxidation of the first barrier layer or the like and can make good electrical contact with the first connection electrode 71.
  • the second barrier layer may be in contact with the first connection electrode 71, but may function as a protective metal layer protecting the antioxidant layer in the manufacturing process, and preferably, part of the second barrier layer is removed so that the first connection electrode is removed. 71 and the anti-oxidation layer can make electrical contact.
  • the first ohmic contact layer may have a thickness of 5A to 500A
  • the reflective metal layer may have a thickness of about 500A to 10000A
  • the first barrier layer may have a thickness of about 100A to 5000A
  • the oxidation-preventing layer may be It may have a thickness of about 100A to 5000A
  • the second barrier layer may have a thickness of about 10A to 1000A.
  • some layers may be omitted or a new layer may be added to the first ohmic electrode 56 having the multilayer structure.
  • 39 is a diagram for explaining an example of a second ohmic electrode.
  • the second ohmic electrode 52 is formed corresponding to the current blocking layer 41 between the conductive film 60 and the dielectric film. 38 and 44, the second ohmic electrode 52 is partially exposed by the second opening 65, and the reflective layer 91 is raised to the edge of the second ohmic electrode 52.
  • the second ohmic electrode 52 contacts the second connection electrode 73 and the third connection electrode 75 connected to the conductive film 60 and the second opening 65.
  • the second ohmic electrode 52 is omitted, the conductive film 60 is made of ITO, and Cr or Ti, which is the lowermost layer of the second connection electrode 73 and the third connection electrode 75, contacts ITO. If you do, the contact resistance may not be good. This is because there is a high possibility of damaging the surface of the ITO by a process of forming an opening in the reflective layer 91 to be described later, and thus the contact resistance is likely to increase.
  • the second ohmic electrode 52 may be formed of a multilayer by a combination of Cr, Ti, Al, Ag, Ni, Pt, W, Au, and the like.
  • the second ohmic electrode 52 need not have the same structure as the first ohmic electrode 56 but may have a similar multilayer structure.
  • the second ohmic electrode 52 is a contact layer 51 / reflective metal layer 53 / first barrier layer 57 / oxide ring layer 58 / second barrier layer 59 sequentially stacked. It may include.
  • the contact layer 51 may be formed to be in contact with the conductive layer 60, and may be formed of a material (eg, Cr, Ti, Ni, etc.) having a low contact resistance with the conductive layer 60.
  • the reflective metal layer 53 is made of a metal having excellent reflectivity (eg, Al, Ag, etc.), and reflects light to reduce absorption loss.
  • the first barrier layer 57 may be made of Ni, Cr, Ti, W, Pt, TiW, or the like, and prevents diffusion between the reflective metal layer 53 and the antioxidant layer 58.
  • the antioxidant layer 58 may be made of Au, Pt, or the like, prevents oxidation of the first barrier layer 57, and the like, and may make good electrical contact with the first connection electrode 71.
  • the second barrier layer 59 may be made of Cr, Ti, Ni, Pt, Al, or the like. Since the second barrier layer 59 should have a good bonding strength with the reflective layer 91, and is exposed to a process of forming an opening in the reflective layer 91, the second barrier layer 59 needs to function as a protective metal film, and a portion of the second barrier layer 59 may be etched as necessary. Therefore, the etching selectivity is preferably made of a good material. In consideration of such conditions, Cr, Pt, Al, and Ni may be used as the second barrier layer 59. The second barrier layer 59 may be in contact with the first connection electrode 71, but may function as a protective metal layer protecting the antioxidant layer in the manufacturing process. Preferably, a portion of the second barrier layer 59 may be removed to make electrical contact between the first connection electrode 71 and the antioxidant layer 58.
  • the contact layer 51 may have a thickness of 5A to 500A
  • the reflective metal layer 53 may have a thickness of about 500A to 10000A
  • the first barrier layer 57 may have a thickness of about 100A to 5000A.
  • the anti-oxidation layer 58 may have a thickness of about 100A to 5000A
  • the second barrier layer 59 may have a thickness of about 10A to 1000A.
  • some layers may be omitted or a new layer may be added to the second ohmic electrode 52 having the multilayer structure.
  • the second ohmic electrode 52 has a plurality of islands corresponding to the plurality of second openings 65.
  • the second ohmic electrode 52 is formed in the form of a plurality of islands corresponding to the plurality of second openings 65. It may be considered to form additional metal layers connecting the plurality of islands of the second ohmic electrode 52 to facilitate current spreading. However, in view of reducing light absorption, it is desirable to reduce the metal layer as much as possible between the plurality of semiconductor layers 30, 40, 50 and the reflective layer 91.
  • the plurality of first openings 63 and the plurality of second openings 65 are provided as current supply passages, and the first ohmic electrode 56 and the second ohmic electrode 52 are provided with the plurality of first openings ( 63 and a plurality of islands corresponding to the plurality of second openings 65, respectively, to spread current by preventing current concentration by the current blocking layer 41.
  • FIG. 1 the first ohmic electrode 56 and the second ohmic electrode 52 allow a smooth current supply and lower the operating voltage.
  • the electrical connection passage of the first connection electrode 71, the second connection electrode 73 and the third connection electrode 75 for the electrical connection passage of the first connection electrode 71, the second connection electrode 73 and the third connection electrode 75.
  • a plurality of first openings 63 and a plurality of second openings 65 are formed.
  • a plurality of semiconductor layers 30, 40, and 50 are mesa etched and a branch electrode is disposed on the first semiconductor layer 30 exposed by mesa etching for current diffusion, in this case, light emission due to mesa etching There is a problem that the plane is reduced.
  • current is supplied through the plurality of first openings 63 with much smaller etching areas.
  • a plurality of second openings 65 may be formed to be greater than or equal to the number of the plurality of first openings 63 to balance the diffusion of holes and electrons.
  • a plurality of electrical connections are formed through the plurality of first openings 63 and the plurality of second openings 65, it is important to improve electrical contact characteristics.
  • the first ohmic electrode 56 and the second ohmic electrode 52 are formed corresponding to the plurality of first openings 63 and the plurality of second openings 65, but as described above, the plurality of semiconductors
  • the first ohmic electrode 56 and the second ohmic electrode 52 are formed in the form of a plurality of islands between the layers 30, 40, 50 and the reflective layer 91 as much as possible.
  • the number, spacing, and arrangement of the first openings 63 and the second openings 65 may be appropriately adjusted for the size, current spreading, and uniform current supply of the semiconductor light emitting device.
  • the plurality of first openings 63 and the plurality of second openings 65 are symmetrically formed with respect to the center of the semiconductor light emitting device.
  • a current is supplied through the plurality of first openings 63 and the plurality of second openings 65, and if the current is nonuniform, some of the first openings 63 and the second openings 65 may be biased. As a result, deterioration may occur at a position where current is biased in the long term.
  • the closed loop shape is not limited to the complete closed loop shape, but also includes a closed loop shape in which a part is turned off.
  • the second connection electrode 73 has a closed loop shape
  • the first connection electrode 71 has a closed loop shape inside the second connection electrode 73
  • the third connection electrode 75 has a closed loop shape. 1 has a square plate shape inside the connection electrode 71 (see FIG. 44).
  • the second opening 65 and the first opening 63 are not positioned inside the third connection electrode 75, that is, in the middle thereof. This may reduce the heat generation in the inner region where the heat generation is relatively high.
  • the insulating layer 95 covers the first connection electrode 71, the second connection electrode 73, and the third connection electrode 75 on the reflective layer 91. At least one third opening 67 and at least one fourth opening 69 are formed in the insulating layer 95. Insulating layer 95 may be formed of SiO 2.
  • the first electrode 81 and the second electrode 85 are formed on the insulating layer 95.
  • the first electrode 81 is electrically connected to the first connection electrode 71 through the third opening 67 to supply electrons to the first semiconductor layer 30.
  • the second electrode 85 is electrically connected to the second connection electrode 73 and the third connection electrode 75 through the fourth opening 69 to supply holes to the second semiconductor layer 50.
  • the first electrode 81 and the second electrode 85 may be electrodes for eutectic bonding.
  • the semiconductor light emitting device reduces light absorption by using a nonconductive reflecting film (reflective layer) 91 including a distributed Bragg reflector 91a instead of a metal reflecting film.
  • a plurality of first openings 63 and second openings 65 are formed to facilitate diffusion of current into the plurality of semiconductor layers 30, 40, 50.
  • the plurality of first openings 63 and the plurality of second openings 65 may be connected to each other by the first connection electrode 71 or the second connection electrode 73 and the third connection electrode 75 having a closed loop shape. The current is supplied more evenly to prevent deterioration due to current bias.
  • the first ohmic electrode 56 and the second ohmic electrode 52 are introduced to facilitate current supply and lower the operating voltage.
  • 40 to 46 illustrate an example of a method of manufacturing a semiconductor light emitting device according to the present disclosure.
  • a plurality of semiconductor layers 30, 40, 50 are grown on the substrate 10.
  • a buffer layer eg, an AlN or GaN buffer layer
  • an undoped semiconductor layer eg, an un-doped GaN
  • a substrate 10 eg, Al 2 O 3 , Si, SiC.
  • a first semiconductor layer 30 having a first conductivity eg Si-doped GaN
  • an active layer 40 InGaN / (In) GaN multi-quantum well structure
  • the second semiconductor layer 50 (eg, Mg-doped GaN) having a second conductivity different from the first conductivity is grown.
  • the buffer layer 20 may be omitted, and each of the semiconductor layers 30, 40, and 50 may be formed in multiple layers.
  • the first semiconductor layer 30 and the second semiconductor layer 50 may be formed with opposite conductivity, but are not preferable in the case of a group III nitride semiconductor light emitting device.
  • a portion of the plurality of first openings 63 is formed in the plurality of semiconductor layers 30, 40, and 50.
  • the first opening 63 is formed up to the second semiconductor layer 50, the active layer 40, and the first semiconductor layer 30.
  • the current blocking layer 41 is formed on the second semiconductor layer 50 corresponding to the plurality of second openings 65 using SiO 2 , TiO 2, or the like. do. Thereafter, a conductive film 60 covering the current blocking layer 41 is formed on the second semiconductor layer 50 by using a material having good conductivity such as ITO. Subsequently, the second ohmic electrode 52 is formed on the conductive film 60, and the first ohmic electrode 56 is formed on the first semiconductor layer 30 exposed through the plurality of first openings 63.
  • the order in which the first ohmic electrode 56 and the second ohmic electrode 52 may be formed may be any of the first, and the same process is performed when the first ohmic electrode 56 and the second ohmic electrode 52 are made of the same material. It may be formed at the same time by.
  • the reflective layer 91 is formed on the conductive film 60.
  • the dielectric film 91b, the distributed Bragg reflector 91a, and the clad film 91c covering the conductive film 60 are formed.
  • the dielectric film 91b or the clad film 91c may be omitted.
  • the distributed Bragg reflector 91a is formed by stacking a pair of SiO 2 and TiO 2 a plurality of times, for example.
  • the distribution Bragg reflector 91a may be formed of a combination of a high refractive index material such as Ta 2 O 5 , HfO, ZrO, SiN, and a dielectric thin film (typically SiO 2 ) having a lower refractive index.
  • a high refractive index material such as Ta 2 O 5 , HfO, ZrO, SiN
  • a dielectric thin film typically SiO 2
  • an optimization process is performed in consideration of the incident angle and the reflectance according to the wavelength based on an optical thickness of 1/4 of the wavelength of the light emitted from the active layer 40. It is desirable, and not necessarily, that the thickness of each layer conform to 1/4 optical thickness of the wavelength.
  • the number of combinations is suitable for 4 to 20 pairs.
  • the effective refractive index of the distribution Bragg reflector 91a is larger than the refractive index of the dielectric film 91b for the reflection and guide of light.
  • the dielectric film 91b may be made of SiO 2 , and the thickness thereof is appropriately 0.2um to 1.0um. Prior to the deposition of the distributed Bragg reflector 91a requiring precision, by forming the dielectric film 91b having a predetermined thickness, the distributed Bragg reflector 91a can be stably manufactured and can also help reflection of light. .
  • a clad layer (91c) may be formed of a dielectric film (91b), material of MgF, CaF, such as a metal oxide, SiO 2, SiON, such as Al 2 O 3.
  • the clad film 91c may also be formed of SiO 2 having a refractive index of 1.46 smaller than the effective refractive index of the distribution Bragg reflector 91a.
  • the top layer of the distributed Bragg reflector 91a consisting of a plurality of pairs of SiO 2 / TiO 2 may be TiO 2 , considering that it can be made of a SiO 2 layer having a thickness of about ⁇ / 4n, the clad film 91c ) Is preferably thicker than [lambda] / 4n so as to be different from the top layer of the distributed Bragg reflector 91a.
  • the clad film is not only burdened with the process of completing the plurality of first openings 63 and the process of forming the plurality of second openings 65, but also because the increase in thickness does not contribute to the improvement of efficiency and only the material cost can be increased.
  • the maximum value of the thickness of the clad film 91c may be appropriately formed within 1 ⁇ m to 3 ⁇ m. However, in some cases, it is not impossible to form more than 3.0um.
  • the distribution Bragg reflector 91a and the first connection electrode 71, the second connection electrode 73 and the third connection electrode 75 are in direct contact with each other, a part of the light traveling through the distribution Bragg reflector 91a It may be absorbed by the first connection electrode 71, the second connection electrode 73, and the third connection electrode 75. Therefore, as described above, when the clad film 91c having a refractive index lower than that of the distribution Bragg reflector 91a is introduced, the first connection electrode 71 and the second connection electrode 73 and the third connection electrode 75 are separated. The amount of light absorption can be greatly reduced.
  • the dielectric film 91b is omitted from the viewpoint of the overall technical idea of the present disclosure, and is composed of the distributed Bragg reflector 91a and the clad film 91c. There is no reason to rule out this.
  • the distribution Bragg reflector 91a one may consider the case where the dielectric film 91b made of TiO 2 is used as the dielectric material. In the case where the distribution Bragg reflector 91a is provided with the SiO 2 layer on the uppermost layer, the case where the clad film 91c is omitted may also be considered.
  • the clad may be clad even when the distributed Bragg reflector 91a includes a TiO 2 layer on the uppermost layer. It may also be conceivable if the film 91c is omitted.
  • the dielectric film 91b, the distributed Bragg reflector 91a, and the clad film 91c serve as an optical waveguide as a non-conductive reflecting film, and preferably have a total thickness of 1 to 8 um.
  • a plurality of second openings 65 are formed in the reflective layer 91, and a plurality of agents formed primarily in the plurality of semiconductor layers 30, 40, and 50.
  • One opening 63 is formed to penetrate to the reflective layer 91.
  • a plurality of first openings 63 are completed by dry etching or wet etching or a combination thereof, and a plurality of second openings 65 are formed.
  • the first ohmic electrode 56 is exposed to the first opening 63
  • the second ohmic electrode 52 is exposed to the second opening 65.
  • a material that prevents electrical contact on the upper surfaces of the first ohmic electrode 56 and the second ohmic electrode 52 can be produced.
  • the etching process may set etching conditions such that materials interfering with electrical contact with the upper surfaces of the first ohmic electrode 56 and the second ohmic electrode 52 may be removed, or the first ohmic electrode 56 and the second ohmic electrode ( A process of appropriately selecting the material of the second barrier layer, which is the uppermost layer of 52), or removing the second barrier layer corresponding to the first opening 63 and the second opening 65 so as not to leave a material that prevents electrical contact; May be considered.
  • the order of forming the first opening 63 and the second opening 65 and the first ohmic electrode 56 and the second ohmic electrode 52 described above may be different.
  • the first connection electrode 71, the second connection electrode 73, and the third connection electrode 75 are formed on the reflective layer 91.
  • the first connection electrode 71, the second connection electrode 73, and the third connection electrode 75 may be deposited using sputtering equipment, E-beam equipment, or the like.
  • the first connection electrode 71, the second connection electrode 73, and the third connection electrode 75 may be formed using Cr, Ti, Ni, or a combination thereof for stable electrical contact, and may be formed of Al or Ag.
  • the same reflective metal layer may be included.
  • the first connection electrode 71 may be formed to contact the first ohmic electrode 56 through the plurality of first openings 63, and the second connection electrode 73 and the third connection electrode 75 may be formed in plural. It may be formed to contact the second ohmic electrode 52 through the second opening (65) of.
  • an insulating layer 95 is formed to cover the first connection electrode 71, the second connection electrode 73, and the third connection electrode 75.
  • Representative material of the insulating layer 95 is SiO 2 , without being limited thereto, SiN, TiO 2 , Al 2 O 3 , Su-8 and the like may be used.
  • at least one third opening 67 and at least one fourth opening 69 are formed in the insulating layer 95.
  • the third opening 67 and the fourth opening 69 may include the first electrode 81 and the first connection electrode 71, and the second electrode 85 and the second connection electrode 73 and the third connection electrode ( It is generally formed at a suitable position for the electrical connection of 75, and the third opening 67 and the fourth opening 69 are formed so as not to overlap with the first opening 63 and the second opening 65.
  • the first electrode 81 and the second electrode 85 may be deposited on the insulating layer 95 using sputtering equipment, E-beam equipment, or the like.
  • the first electrode 81 is connected to the first connection electrode 71 through at least one third opening 67
  • the second electrode 85 is connected to the second through at least one fourth opening 69. It is connected to the electrode 73 and the third connection electrode 75.
  • the first electrode 81 and the second electrode 85 may be electrically connected to electrodes provided outside (package, COB, submount, etc.) by a method such as stud bump, conductive paste, and eutectic bonding. In the case of eutectic bonding, it is important that the height difference between the first electrode 81 and the second electrode 85 is not large.
  • the semiconductor light emitting device since the first electrode 81 and the second electrode 85 can be formed on the insulating layer 95 by the same process, there is almost no height difference between the two electrodes. Thus there is an advantage in the case of eutectic bonding.
  • the uppermost portions of the first electrode 81 and the second electrode 85 are eutectic bonding such as Au / Sn alloy and Au / Sn / Cu alloy. It can be formed of a material.
  • the current blocking layer is omitted, the second ohmic electrode 52 includes the ohmic contact branch 54, and the first opening 63 is added to the center of the light emitting surface. Is substantially the same as the semiconductor light emitting device described with reference to FIGS. 38 to 46. Therefore, duplicate descriptions are omitted.
  • the current blocking layer may be included in the present example, since the current blocking layer is omitted, light may be absorbed by the first ohmic electrode 56 and the second ohmic electrode 52. However, when the first ohmic electrode 56 and the second ohmic electrode 52 include a highly reflective metal layer (eg, Al, Ag, etc.) as described with reference to FIG. 39, the degree of light absorption may be insignificant. In contrast, the process may be reduced, and the operating voltage may be lowered.
  • a highly reflective metal layer eg, Al, Ag, etc.
  • the first opening 63 is added to the center of the light emitting surface, the balance between electrons and holes in the center region may be improved, and light emission may be improved.
  • the first ohmic electrode 56 and the second ohmic electrode 52 are formed in a plurality of island shapes respectively corresponding to the plurality of first openings 63 and the plurality of second openings 65.
  • the first ohmic electrode 56 and the second ohmic electrode 52 are symmetrically arranged with respect to the center of the light emitting surface to supply current evenly.
  • the second ohmic electrode 52 includes an ohmic contact pad 55 and an ohmic contact branch 54.
  • the ohmic contact pad 55 corresponds to the second opening 65 and is in contact with the second connection electrode 73 and the third connection electrode 75 leading to the second opening 65.
  • the ohmic contact branches 54 protrude from the ohmic contact pads 55 in a branch shape with a width smaller than that of the ohmic contact pads 55. Although the current blocking layer is omitted, the ohmic contact branch 54 allows the current to spread better laterally, further improving the smooth flow of current and the evenness of the current distribution. In addition, the ohmic contact branch 54 may shorten the distance between the second ohmic electrode 52 and the first ohmic electrode 56 and may contribute to an operation voltage drop.
  • FIG. 48 is a view for explaining another example of the semiconductor light emitting device according to the present disclosure.
  • the semiconductor light emitting device includes a point where the current blocking layer is removed, a point where the second ohmic electrode 52 has an ohmic contact branch, and a point where the fourth connection electrode 77 and the fifth connection electrode 79 are added. Except for the semiconductor light emitting device described in Figures 38 to 46 are substantially the same. Therefore, duplicate descriptions are omitted.
  • a current blocking layer may be added.
  • the fourth connection electrode 77 is electrically connected to the first electrode 81, and connects the plurality of first openings 63 in a closed loop shape to the outside of the third connection electrode 75.
  • the fifth connection electrode 79 is electrically connected to the second electrode 85, and connects the plurality of second openings 65 in a closed loop shape to the outside of the fourth connection electrode 77.
  • a closed loop connection electrode having different polarities and alternately arranged may be added.
  • the closed loop-shaped fourth connection electrode 77 and the fifth connection electrode 79 may be added to obtain uniformity of current distribution.
  • uniformity of current distribution it is possible to select how many patterns in which the plurality of first openings 63 and the second openings 65 are arranged in each connection electrode.
  • the uniformity of the current distribution can be achieved more precisely, and the operating voltage can be lowered.
  • 49 is a view for explaining another example of the semiconductor light emitting device according to the present disclosure.
  • the semiconductor light emitting device In the semiconductor light emitting device, the number of connection electrodes is reduced, the current blocking layer is removed, and the first ohmic electrode 56 and the second ohmic electrode 52 are provided with ohmic contact branches 44 and 54, respectively. Except for that, the semiconductor light emitting device is substantially the same as the semiconductor light emitting device described with reference to FIGS. 38 to 46. Therefore, duplicate descriptions are omitted.
  • the uniformity of the current distribution and the heat dissipation of the inner region can be achieved only by the two connection electrodes 71 and 73.
  • a current blocking layer may be added.
  • connection electrode 71 is positioned at the center in the shape of a square plate, and the second connection electrode 73 is positioned outside the first connection electrode 71 in the closed loop shape.
  • the first ohmic electrode 56 and the second ohmic electrode 52 include ohmic contact pads 45 and 55 and ohmic contact branches 44 and 54, respectively.
  • the shape of the first opening 63 when the first opening 63 is formed is the ohmic contact pads 45 and the ohmic contact branches 44. It can be formed to correspond to.
  • the ohmic contact branches 54 and 44 may allow the current to spread better laterally and improve the smooth flow of current and the uniformity of the current distribution.
  • the ohmic contact branches 54 and 44 may close the distance between the second ohmic electrode 52 and the first ohmic electrode 56 and may contribute to an operation voltage drop.
  • 50 is a view for explaining another example of the semiconductor light emitting device according to the present disclosure.
  • the semiconductor light emitting device is substantially the same as the semiconductor light emitting device described with reference to FIGS. 38 to 46 except that the conductive film and the current blocking layer are omitted. Therefore, duplicate descriptions are omitted.
  • the second ohmic electrode 52 is in contact with the second semiconductor layer 50.
  • the second semiconductor layer 50 which is a p-type semiconductor layer (eg, Mg-doped GaN), and the metal
  • the second ohmic electrode 52 has a work function larger than the work function of the second semiconductor layer 50. It may be made of a metal having a (eg, Ni, Au, Pt). Subsequent heat treatment processes can also be performed to improve ohmic contact.
  • the conductive film also absorbs light, the amount of light absorption can be reduced by removing the conductive film.
  • the step difference is reduced when the reflective layer 91 is formed by removing the current blocking layer, particularly when the distributed Bragg reflector is formed.
  • GaAs capable of other high-concentration p-doping rather than being applied when the second semiconductor layer 50 is p-GaN, In the InP semiconductor light emitting device, the above configuration can be considered.
  • the semiconductor light emitting device includes a substrate 10, a plurality of semiconductor layers, a light absorption preventing film 41, and a current diffusion conductive film 60. And a non-conductive reflecting film 91, an additional reflecting film 95, first electrode portions 71, 72, 74, 75 and second electrode portions 81, 82, 84, 85.
  • the group III nitride semiconductor light emitting element will be described as an example.
  • FIG. 51 an example in which the first electrode portions 71, 72, 74, and 75 and the second electrode portions 81, 82, 84, and 85 are all disposed on opposite sides of the substrate with respect to the plurality of semiconductor layers is illustrated.
  • This example can also be applied to a semiconductor light emitting device from which a substrate is removed.
  • this example may be applied to a semiconductor light emitting device in which an n-side bonding electrode is positioned below a first semiconductor layer in which a substrate is removed and exposed as a vertical semiconductor light emitting device.
  • the plurality of semiconductor layers may include a buffer layer 20 formed on the substrate 10, a first semiconductor layer 30 having a first conductivity (for example, Si-doped GaN), and a second semiconductor layer having a second conductivity different from the first conductivity. (Eg, Mg-doped GaN) and an active layer 40 interposed between the first semiconductor layer 30 and the second semiconductor layer 50 to generate light through recombination of electrons and holes (eg, InGaN / ( In) GaN multi-quantum well structure).
  • Each of the semiconductor layers 30, 40, and 50 may be formed in multiple layers, and the buffer layer 20 may be omitted.
  • the nonconductive reflecting film 91 reflects light from the active layer 40 toward the plurality of semiconductor layers 30, 40, and 50.
  • the nonconductive reflecting film 91 is formed of a nonconductive material to reduce light absorption by the metal reflecting film.
  • the nonconductive reflecting film 91 may be made of a single dielectric layer or may have a multilayer structure. As an example of the multilayer structure, the nonconductive reflecting film 91 may include a dielectric film sequentially stacked, a first distributed Bragg reflector, and a clad film.
  • the first electrode portions 71, 72, 74, and 75 are in electrical communication with the first semiconductor layer 30, and supply one of electrons and holes
  • the second electrode portions 81, 82, 84, and 85 are made of 2 is in electrical communication with the semiconductor layer 50 and supplies the other one of electrons and holes.
  • An additional reflecting film 95 is formed over the non-conductive reflecting film 91 to reflect the light transmitted through the non-conductive reflecting film 91 toward the first semiconductor layer 30.
  • At least one of the first electrode portions 71, 72, 74, 75 and the second electrode portions 81, 82, 84, 85 may have a lower electrode 71, 81, and a connecting electrode 72, 74, 82, 84. It includes.
  • the lower electrodes 71 and 81 are at least partially exposed by the openings 62 and 63 formed in the non-conductive reflective film 91 and are electrically connected to the plurality of semiconductor layers 30, 40 and 50.
  • connection electrodes 72, 74, 82, and 84 are formed on the non-conductive reflecting film 91 and are electrically connected to the lower electrodes 71 and 81 through the openings 62 and 63, respectively.
  • a plurality of openings 62 and 63 are formed in the non-conductive reflecting film 91 so as to smoothly supply current, and the first connection electrodes 72 and 74 communicate with the first semiconductor layer 30.
  • the second connection electrodes 82 and 84 connect the plurality of other openings 62 to the second semiconductor layer 50.
  • the openings 62 and 63 include a case in which the openings 62 and 63 are open to the side as well as the upper side of the semiconductor light emitting device.
  • An additional reflecting film 95 is formed over the non-conductive reflecting film 91 and covers the connecting electrodes 72, 74, 82, 84. Although the light generated from the active layer 40 is reflected by the non-conductive reflective film 91 to the plurality of semiconductor layers 30, 40, and 50, some of the light may pass through or leak from the non-conductive reflective film 91. .
  • the additional reflecting film 95 reflects the light transmitted through the non-conductive reflecting film 91 to the plurality of semiconductor layers 30, 40, and 50, thereby reducing light loss and improving luminance of the semiconductor light emitting device.
  • At least one of the first electrode portion and the second electrode portion may include upper electrodes 75 and 85.
  • the upper electrodes 75 and 85 are formed on the additional reflective film 95 and electrically connected to the connection electrodes 72, 74, 82 and 84 through the openings 64 and 65 formed in the additional reflective film 95.
  • the openings 64 and 65 include a case in which the openings 64 and 65 are open to the side as well as the upper side of the semiconductor light emitting device.
  • the first electrode portion and the second electrode portion include lower electrodes 71 and 81, connecting electrodes 72, 74, 82 and 84, and upper electrodes 75 and 85, respectively.
  • the lower electrode 71 (first lower electrode) of the first electrode part contacts the first semiconductor layer 30 exposed by partially removing the plurality of semiconductor layers 30, 40, and 50.
  • the lower electrode 81 (second lower electrode) of the second electrode portion is provided on the second semiconductor layer 50.
  • the first lower electrode 71 and the second lower electrode 81 may be substantially evenly disposed on the light emitting surface (a plane when the plurality of semiconductor layers 30, 40, 50 are observed from above) in the form of a plurality of islands. Or symmetrically arranged.
  • an embodiment in which at least one of the first lower electrode 71 and the second lower electrode 81 extend in a band shape is possible.
  • a portion of the light generated in the active layer 40 may also be absorbed by the second lower electrode 81.
  • a light absorption prevention layer 41 is provided under the second lower electrode 81. do.
  • the light absorption prevention film 41 may have only a function of reflecting some or all of the light generated in the active layer 40, and a current is directly below the second lower electrode 81 from the second lower electrode 81. It may have only a function that prevents flow, or may have both functions.
  • the current spreading conductive film 60 is provided.
  • the current spreading conductive layer 60 is formed between the light absorption preventing layer 41 and the second lower electrode 81 and may be formed to have a light transmitting property and to substantially cover the second semiconductor layer 50.
  • the current spreading ability is poor, and in the case where the p-type semiconductor layer 50 is made of GaN, most of the current diffusion conductive film 60 should be assisted.
  • materials such as ITO and Ni / Au may be used as the current spreading conductive film 60.
  • FIG. 52 is a view illustrating an example of a portion where the light is more likely to be transmitted from the nonconductive reflecting film 900.
  • FIG. 52 is a diagram illustrating a portion of the non-conductive reflecting film 900 due to structures (eg, electrodes 700, 800, steps, etc.)
  • the malleable reflective film 900 includes portions (indicated by dashed lines) in which height differences occur.
  • the nonconductive reflecting film 900 may include a distributed Bragg reflector.
  • the distribution Bragg reflector may consist of multiple layers of material, and each material layer must be well formed to a specially designed thickness in order to function as a reflective film.
  • the distribution Bragg reflector may be composed of repeated stacks of SiO 2 / TiO 2 , SiO 2 / Ta 2 O 2 , or SiO 2 / HfO.
  • SiO 2 / TiO 2 has good reflection efficiency.
  • SiO 2 / Ta 2 O 2 , or SiO 2 / HfO may have good reflection efficiency.
  • the non-conductive reflecting film 900 does not reflect all the incident light, but may be partially transmitted. In particular, as illustrated in FIG.
  • the additional reflective film 95 reflects the light transmitted through the non-conductive reflective film 91 toward the plurality of semiconductor layers 30, 40, and 50 to reduce light loss and increase the luminance of the semiconductor light emitting device.
  • the additional reflecting film 95 may be formed of a nonmetal or a non-conductive material to reduce light absorption, and may be made of a single dielectric film, but may have a multilayer structure to increase reflectance.
  • the additional reflective film 95 may include the second distributed Bragg reflector 95a.
  • the additional reflective film 95 is disposed between the lower dielectric film 95b and the second distributed Bragg reflector 95a and the upper electrodes 75, 85 between the second distributed Bragg reflector 95a and the non-conductive reflective film 91. At least one of the upper dielectric film (95c) of the.
  • the lower dielectric layer 95b may cover the connection electrodes 72, 74, 82, and 84 to alleviate the height difference.
  • the second distribution Bragg reflector 95a is preferably formed of a light transmitting material (eg, SiO 2 / TiO 2) to prevent absorption of light.
  • the lower dielectric film 95b and the upper dielectric film 95c may be formed of a material having a refractive index smaller than that of the second distribution Bragg reflector 95a so that the additional reflective film 95 may have a light wave guide structure. .
  • the lower dielectric film 95b since the lower dielectric film 95b is in contact with the connecting electrodes 72, 74, 82, and 84, it is preferable that the lower dielectric film 95b is selected as a material having good bonding strength with the connecting electrodes 72, 74, 82, and 84.
  • 95c) is preferably selected as a material having good bonding strength with the upper electrodes 75,85.
  • the present disclosure also does not exclude forming the additional reflecting film 95 with a metal film.
  • the additional reflective film 95 is preferably formed to avoid the portion where the opening is to be formed, and can be electrically insulated by the lower dielectric film 95b and the upper dielectric film 95c.
  • an embodiment in which the additional reflective film 95 is partially formed, for example, only in a specific region (for example, a step or a region having a high height difference) of the non-conductive reflective film 91 is possible.
  • the upper electrode 75 (first upper electrode) of the first electrode portion and the upper electrode 85 (second upper electrode) of the second electrode portion are provided on the additional reflective film 95.
  • the first upper electrode 75 and the second upper electrode 85 may be disposed to face each other, and the first connection electrodes 72 and 74 and the second connection electrode may be formed through openings formed in the additional reflective film 95, respectively. It is electrically connected to the connecting electrodes 82 and 84. Electrons are supplied to the first semiconductor layer 30 through the first upper electrode 75, the first connection electrodes 72 and 74, and the first lower electrode 71, and the second upper electrode 85 and the second electrode. Holes are supplied to the second semiconductor layer 50 through the connection electrodes 82 and 84 and the second lower electrode 81.
  • the first upper electrode 75 and the second upper electrode 85 may be eutectic bonding electrodes or soldering electrodes.
  • the non-conductive reflecting film 91 instead of the metal reflecting film.
  • the plurality of semiconductor layers 30 may be formed by the structure of the connection electrodes 72, 74, 82, 84 and the lower electrodes 71 and 81 through the plurality of openings 62 and 63 evenly formed in the non-conductive reflective film 91. 40, 50) to facilitate current spreading. Therefore, it is not necessary to form a long metal band like a branch electrode on the first semiconductor layer 30 and / or the second semiconductor layer 50 to spread the current, or to form a small number, and as a result, Light absorption by the metal is further reduced. In addition, even light transmitted through the non-conductive reflecting film 91 is reflected by the additional reflecting film 95 to contribute to the improvement of the brightness.
  • first connection electrodes 72 and 74 and the second connection electrodes 82 and 84 directly contact the first semiconductor layer 30 or the current diffusion conductive film 60 through the openings 62 and 63.
  • the electrical contact may be poor, but the first lower electrode 71 and the second lower electrode 81 are connected to the connection electrodes 72, 74, 82, and 84, the first semiconductor layer 30, and the current spreading conductive layer 60. ) Improve the electrical contact between them (e.g., reduce contact resistance).
  • the openings 62 and 63 are formed in the non-conductive reflecting film 91, the upper surfaces of the lower electrodes 71 and 81 may be affected to reduce electrical contact.
  • the lower electrodes 71 and 81 are provided with a contact layer, a reflection layer, an anti-diffusion layer, an antioxidant layer, and an etch stop layer, which are sequentially stacked.
  • the etch stop layer is removed by wet etching to expose the antioxidant layer, and then the connection electrodes 72, 74, 82, and 84 may contact the antioxidant layer.
  • the connection electrodes 72, 74, 82 and 84 are partially exposed through the openings 64 and 65. Top surfaces of 82 and 84 may be affected by the process of forming openings 64 and 65. Therefore, similarly to the lower electrodes 71 and 81, it may be considered to form a multilayer structure having the uppermost layer of the connection electrodes 72, 74, 82, and 84 as an etch stop layer.
  • FIG. 53 is a diagram illustrating another example of the semiconductor light emitting device according to the present disclosure, wherein the semiconductor light emitting device includes a substrate 10, a plurality of semiconductor layers, a light absorption preventing film 41, a current spreading conductive film 60, and a non-conductive reflecting film. 91, additional reflecting film 95, first electrode portions 71, 72, 74, 75 and second electrode portions 81, 82, 84, 85.
  • the nonconductive reflecting film 91 includes a dielectric film 91b, a first distributed Bragg reflector 91a, and a clad film 91c.
  • the additional reflecting film 95 includes a dielectric film 95b, a second distributed Bragg reflector 95a, and a clad film 95c.
  • the groove 61 is formed by mesa etching to expose the first semiconductor layer 30 in contact with the first lower electrode 71.
  • the height difference is also generated due to the same structure as the lower electrodes 71 and 81.
  • a height difference occurs due to the connection electrodes 72, 74, 82, and 84 on the nonconductive reflective film 91. Therefore, prior to the deposition of the distributed Bragg reflectors 91a and 95a requiring precision, the dielectric films 91b and 95b having a predetermined thickness can be formed, whereby the distributed Bragg reflectors 91a and 95a can be stably manufactured. It can also help with light reflections.
  • the material of the dielectric films 91b and 95b is suitably SiO 2 , and the thickness thereof is preferably 0.2 ⁇ m to 1.0 ⁇ m. If the thickness of the dielectric films 91b and 95b is too thin, it may be insufficient to cover the lower electrodes 71 and 81 with a height of about 2 ⁇ m to 3 ⁇ m, and when too thick, subsequent openings 62, 63, and 64 may be insufficient. 65) This may be a burden on the forming process. The thickness of the dielectric films 91b and 95b may then be thicker than the thickness of the subsequent distribution Bragg deflectors 91a and 95a.
  • the dielectric films 91b and 95b are preferably formed by Chemical Vapor Deposition (CVD), and particularly, Plasma Enhanced CVD (PECVD).
  • CVD Chemical Vapor Deposition
  • PECVD Plasma Enhanced CVD
  • the chemical vapor deposition method is advantageous compared to physical vapor deposition (PVD), such as E-Beam Evaporation.
  • PVD physical vapor deposition
  • the dielectric films 91b and 95b are preferably formed by chemical vapor deposition for reducing the height difference and ensuring the insulation. Therefore, it is possible to secure the function as the reflective films 91 and 95 while ensuring the reliability of the semiconductor light emitting element.
  • Distribution Bragg reflectors 91a and 95a are formed on dielectric films 91b and 95b, respectively.
  • the Distributed Bragg reflectors 91a and 95a are physical vapor deposition (PVD), and electron beam deposition (among them). It is preferable to form by E-Beam Evaporation, Sputtering, or Thermal Evaporation.
  • the distribution Bragg reflectors 91a and 95a are preferably formed of a light transmitting material (eg SiO 2 / TiO 2) to prevent absorption of light.
  • the dielectric layers 91b and 95b may be formed of a dielectric (eg, SiO 2 ) having a refractive index smaller than the effective refractive index of the distribution Bragg reflectors 91a and 95a.
  • the effective refractive index refers to the equivalent refractive index of light that can travel in a waveguide made of materials having different refractive indices.
  • the clad layers 91c and 95c may also be made of a material (eg, Al 2 O 3, SiO 2, SiON, MgF, CaF) that is lower than the effective refractive index of the distribution Bragg reflectors 91a and 95a.
  • a material eg, Al 2 O 3, SiO 2, SiON, MgF, CaF
  • the dielectric film 91b-the first distributed Bragg reflector 91a-the clad film 91c, and the dielectric film 95b-the first distributed Bragg reflector 95a-the clad film 95c are each light. It may be described in terms of an optical waveguide.
  • the optical waveguide is a structure that guides the light by using total reflection by surrounding the light propagation part with a material having a lower refractive index.
  • the dielectric films 91b and 95b and the clad films 91c and 95c surround the propagation section and can be viewed as part of the optical waveguide.
  • FIGS. 54 to 65 are diagrams illustrating an example of a method of manufacturing a semiconductor light emitting device according to the present disclosure, and cross sections (FIGS. 57, 59, and 64) are examples of a cross section taken along line AA of FIG. 65. to be.
  • a plurality of semiconductor layers 30, 40, 50 are grown on the substrate 10.
  • a buffer layer eg, an AlN or GaN buffer layer
  • an undoped semiconductor layer eg, un
  • a second semiconductor layer 50 (eg, Mg-doped GaN) having a second conductivity different from the first conductivity is grown.
  • the buffer layer 20 may be omitted, and each of the semiconductor layers 30, 40, and 50 may be formed in multiple layers.
  • the first semiconductor layer 30 and the second semiconductor layer 50 may be formed with opposite conductivity, but are not preferable in the case of a group III nitride semiconductor light emitting device.
  • a light absorption prevention film 41 is formed on the second semiconductor layer 50 by using SiO 2 , TiO 2, or the like.
  • the light absorption prevention layer 41 may be formed to be slightly wider than the second lower electrode 81 at a position corresponding to the second lower electrode 81 to be formed later.
  • the light absorption prevention layer 41 is preferably evenly distributed throughout the light emitting surface, and the second lower electrode 81 emits semiconductor light in consideration of the fact that p-GaN (eg, Mg-doped GaN) has a relatively poor current spreading. Since the light is distributed from the edge of the device to the inside, a light absorption prevention film 41 may be formed accordingly.
  • the light absorption prevention film 41 is formed in a plurality of island shapes.
  • the light absorption prevention layer 41 may also be formed in a strip shape.
  • a current diffusion conductive layer 60 covering the light absorption prevention layer 41 is formed on the second semiconductor layer 50 by using a light-transmitting material having good conductivity such as ITO.
  • the second semiconductor layer 50 and the active layer 40 are mesa-etched to form a plurality of grooves 61 exposing the first semiconductor layer 30.
  • the plurality of grooves 61 are arranged in an island form.
  • the first lower electrodes 71 are evenly arranged in a plurality of islands, a plurality of grooves 61 are also formed accordingly.
  • the light absorption prevention film 41 may also be formed in a strip shape.
  • the first lower electrode 71 is formed on the first semiconductor layer 30 exposed to the plurality of grooves 61 through a deposition method or the like, and the light absorption prevention film (
  • the second lower electrode 81 is formed on the current spreading conductive film 60 corresponding to 41.
  • the order of forming the first lower electrode 71 and the second lower electrode 81 may be formed first, and the same process is performed when the first lower electrode 71 and the second lower electrode 81 are made of the same material. It may be formed at the same time by.
  • the second lower electrode 81 is formed to have a smaller width than the light absorption prevention layer 41
  • the first lower electrode 71 is formed to have a width smaller than the width of the groove 61 to be formed in the groove 61. Away from the side.
  • a nonconductive reflecting film 91 is formed on the current spreading conductive film 60.
  • the dielectric film 91b, the first distributed Bragg reflector 91a, and the clad film 91c are formed to cover the current spreading conductive film 60.
  • the dielectric film 91b or the clad film 91c may be omitted.
  • the first distributed Bragg reflector 91a is formed by stacking a pair of SiO 2 and TiO 2 a plurality of times, for example.
  • the first distribution Bragg reflector 91a may be formed of a combination of a high refractive index material such as Ta 2 O 5 , HfO, ZrO, SiN, and a dielectric thin film having a lower refractive index (typically SiO 2 ).
  • a high refractive index material such as Ta 2 O 5 , HfO, ZrO, SiN
  • a dielectric thin film having a lower refractive index typically SiO 2 .
  • an optimization process is considered in consideration of the incident angle and reflectance according to the wavelength based on an optical thickness of 1/4 of the wavelength of the light emitted from the active layer 40. It is desirable to pass through, and the thickness of each layer does not necessarily have to conform to 1/4 optical thickness of the wavelength.
  • the number of combinations is suitable for 4 to 40 pairs.
  • the effective refractive index of the first distributed Bragg reflector 91a is larger than that of the dielectric film 91b for the reflection and guide of light.
  • the first distributed Bragg reflector 91a is composed of SiO 2 / TiO 2
  • the refractive index of SiO 2 is 1.46 and the refractive index of TiO 2 is 2.4
  • the effective refractive index of the distributed Bragg reflector is a value between 1.46 and 2.4.
  • the dielectric film 91b may be made of SiO 2 , and the thickness thereof is appropriately 0.2um to 1.0um.
  • the first distributed Bragg reflector 91a Prior to the deposition of the first distributed Bragg reflector 91a, which requires precision, the first distributed Bragg reflector 91a can be stably manufactured and helps to reflect light by forming the dielectric film 91b having a predetermined thickness. Can give
  • the clad film 91c may be made of a metal oxide such as Al 2 O 3 , a dielectric film 91b such as SiO 2 , SiON, MgF, CaF, or the like.
  • the clad film 91c may also be formed of SiO 2 having a refractive index of 1.46 smaller than the effective refractive index of the first distributed Bragg reflector 91a.
  • the uppermost layer of the distributed Bragg reflector 91a composed of a plurality of pairs of SiO 2 / TiO 2 may be TiO 2 , considering that it can be made of an SiO 2 layer having a thickness of about ⁇ / 4n, the clad film 91c ) Is preferably thicker than [lambda] / 4n so as to be different from the top layer of the distributed Bragg reflector 91a.
  • the clad film 91c is too thick, not less than 3.0 ⁇ m, because not only a burden on the subsequent opening forming process but also an increase in thickness does not contribute to the efficiency improvement and only a material cost can be increased. Therefore, in order not to burden the subsequent process, the maximum value of the thickness of the clad film 91c may be appropriately formed within 1 ⁇ m to 3 ⁇ m. However, in some cases, it is not impossible to form more than 3.0um.
  • the first distributed Bragg reflector 91a When the first distributed Bragg reflector 91a is directly in contact with the first connecting electrodes 72 and 74 and the second connecting electrodes 82 and 84, a part of the light traveling through the first distributed Bragg reflector 91a It may be absorbed by the first connection electrodes 72 and 74 and the second connection electrodes 82 and 84. Therefore, when the clad film 91c having a refractive index lower than that of the first distributed Bragg reflector 91a is introduced as described above, light absorption by the first connection electrodes 72 and 74 and the second connection electrodes 82 and 84 is achieved. Can be greatly reduced.
  • the dielectric film 91b is omitted from the viewpoint of the overall technical idea of the present disclosure, and the first distributed Bragg reflector 91a and the clad film 91c may be considered. There is no reason to exclude the configuration. Instead of the first distributed Bragg reflector 91a, a case in which a dielectric film 91b made of TiO 2 is used as a dielectric may be considered. In the case where the first distributed Bragg reflector 91a includes the SiO 2 layer on the uppermost layer, the case where the clad film 91c is omitted may also be considered.
  • the first distributed Bragg reflector 91a includes the TiO 2 layer at the top. In this case, the case where the clad film 91c is omitted may also be considered.
  • the dielectric film 91b, the first distributed Bragg reflector 91a, and the clad film 91c serve as the optical waveguides as the non-conductive reflecting film 91, and preferably have a total thickness of 1 to 8 um. .
  • the non-conductive reflecting film 91 is formed on the current spreading conductive film 60, and the opening (eg, plasma etching) is formed through an etching process (for example, plasma etching). 62,63).
  • the openings 62 and 63 do not exclude the form of opening to the side as well as to the upper side of the semiconductor light emitting device.
  • openings 62 and 63 are gradually formed as shown in FIG. 60A, and as shown in FIG. 60B, the second lower electrode 81 is formed. Part of the top surface is exposed.
  • the same process may be performed on the first lower electrode 71.
  • FIG. 60 (b) the height difference between the upper rims of the openings 62 and 63 and the upper surface of the non-conductive reflecting film 91 is reduced from FIG. 60 (a).
  • the periphery of the second lower electrode 81 is exposed by the opening 62 as shown in FIG. 60C, and the inclined surface is formed on the non-conductive reflective film 91 due to the opening 62.
  • the first lower electrode 71 and the second lower electrode 81 are exposed through the openings 62 and 63.
  • the width of the openings 62 and 63 may be selected to expose the periphery of the lower electrodes 71 and 81 as shown in FIG. 60D, or may be selected to expose only a portion of the lower electrodes 71 and 81 as shown in FIG. 60B. . 60D, the periphery of the openings 62 and 63 is exposed and the connecting electrodes 72, 74, 82 and 84 surround the lower electrodes 71 and 81, that is, the top and side surfaces of the lower electrodes 71 and 81. In contact with, the stability of the electrical connection can be further improved. In addition, the heat treatment may further strengthen and stabilize the connection between the lower electrodes 71 and 81 and the connection electrodes 72, 74, 82, and 84.
  • FIG. 61 is a view for explaining an example of the layer structure of the lower electrodes 71 and 81, and is an enlarged view of a part of the openings 62 and 63 formed by the dry etching process.
  • Halogen gas containing an F group as an etching gas in the dry etching process (first etching process) for forming the openings 62 and 63 (for example, CF 4 , C 2 F 6 , C 3 F 8 , SF 6, etc.) Can be used.
  • the lower electrodes 71 and 81 may include a plurality of layers.
  • the second lower electrode 81 may include a contact layer 81a electrically connected to the p-type semiconductor layer 50, an antioxidant layer 81d and an antioxidant layer 81d formed on the contact layer 81a. It includes an etch stop layer 81e formed on.
  • the second lower electrode 81 may include the contact layer 81a, the reflective layer 81b, the diffusion barrier 81c, the antioxidant layer 81d, and the etch stop layer 81e which are sequentially formed on the transparent conductive film 60. Include.
  • the first lower electrode 71 may also have the same or similar layer structure as the second lower electrode 81.
  • the contact layer 81a is preferably made of a material which makes good electrical contact with the transparent conductive film 60. Materials such as Cr and Ti are mainly used as the contact layer 81a, and Ni and TiW may also be used, and Al and Ag having good reflectance may be used.
  • the reflective layer 81b may be made of a metal having good reflectance (eg, Ag, Al, or a combination thereof). The reflective layer 81b reflects the light generated by the active layer 40 toward the plurality of semiconductor layers 30, 40, and 50. The reflective layer 81b may be omitted.
  • the diffusion barrier layer 81c prevents the material of the reflective layer 81b or the material of the antioxidant layer 81d from diffusing into another layer.
  • the diffusion barrier layer 81c may be formed of at least one selected from Ti, Ni, Cr, W, TiW, and the like, and when a high reflectance is required, Al, Ag, or the like may be used.
  • the antioxidant layer 81d may be made of Au, Pt, or the like, and may be any material as long as it is exposed to the outside and does not oxidize well in contact with oxygen. As the antioxidant layer 81d, Au having good electrical conductivity is mainly used.
  • the etch stop layer 81e is a layer exposed in the dry etching process for forming the openings 62 and 63.
  • the etch stop layer 81e is the uppermost layer of the second lower electrode 81.
  • Au is used as the etch stop layer 81e, not only the bonding strength with the non-conductive reflecting film 91 is weak, but a portion of Au may be damaged or damaged during etching. Therefore, when the etch stop layer 81e is made of a material such as Ni, W, TiW, Cr, Pd, Mo, or the like instead of Au, the bonding strength with the non-conductive reflecting film 91 may be maintained, thereby improving reliability.
  • the etch stop layer 81e protects the second lower electrode 81 and, in particular, prevents damage to the antioxidant layer 81d.
  • a halogen gas containing an F group eg, CF 4 , C 2 F 6 , C 3 F 8 , SF 6
  • the etch stop layer 81e is preferably made of a material having excellent etching selectivity in such a dry etching process.
  • the antioxidant layer 81d may be damaged or damaged in the dry etching process.
  • Ni or Ni is suitable as a material of the etch stop layer 81e in view of the etching selectivity. Ni or Cr does not react with or slightly reacts with the etching gas of the dry etching process, and does not etch to serve to protect the second lower electrode 81.
  • a material such as an insulating material or an impurity may be formed on the upper layer of the second lower electrode 81 due to the etching gas.
  • a material may be formed by reacting the halogen etching gas including the F group with the upper metal of the electrode.
  • the halogen etching gas including the F group For example, at least a portion of Ni, W, TiW, Cr, Pd, Mo, and the like as a material of the etch stop layer 81e may react with an etching gas of a dry etching process to form a material 107 (eg, NiF).
  • the material formed as described above may cause a decrease in electrical characteristics (eg, an increase in operating voltage) of the semiconductor light emitting device.
  • Ni, W, TiW, Cr, Pd, Mo, etc. do not react with the etching gas to form a material or form a very small amount of material. It is preferable to suppress material generation or to form a small amount, and Cr is more suitable as a material of the etch stop layer 81e than Ni in this respect.
  • the upper layer of the lower electrode 81 that is, the portions corresponding to the openings 62 and 63 of the etch stop layer 81e in consideration of the formation of the material, is removed by a wet etching process (second etching process).
  • second etching process As shown in 61, the antioxidant layer 81d corresponding to the openings 62 and 63 is exposed.
  • the material is etched and removed together with the etch stop layer 81e. As such, the material is removed to improve the electrical contact between the lower electrodes 71, 81, 93 and the connection electrodes 72, 74, 82, and 84, thereby preventing the electrical characteristics of the semiconductor light emitting device from being degraded.
  • the first etching process may be performed by wet etching to form the openings 62 and 63.
  • the non-etching liquid of the conductive reflective film 91 such as HF, BOE, NHO 3, HCl may be used alone or in combination in an appropriate concentration.
  • the etching selectivity of the anti-etching layer 81e is excellent to protect the antioxidant layer 81d. desirable.
  • Cr is suitable as a material of the etch stop layer 81e.
  • the etch stop layer 81e corresponding to the openings 62 and 63 may be removed by a subsequent wet etching process (second etching process).
  • the first connection electrodes 72 and 74 and the second connection electrode are used on the non-conductive reflective film 91. 82,84 are deposited. Some of the plurality of openings 62 and 63 communicate with the plurality of grooves 61 exposing the first semiconductor layer 30, respectively, and the remaining openings 62 are formed on the current spreading conductive film 60. The second lower electrode 81 is exposed. The first connection electrodes 72 and 74 and the second connection electrodes 82 and 84 are electrically connected to the first lower electrode 71 and the second lower electrode 81 through the plurality of openings 62 and 63, respectively. do.
  • the first connection electrodes 72 and 74 and the second connection electrodes 82 and 84 are electrically connected to the first lower electrode 71 and the second lower electrode 81 through the plurality of openings 62 and 63, respectively. do.
  • the first connection electrodes 72 and 74 and the second connection electrodes 82 and 84 may include a contact layer and a reflective layer, for example, the first lower electrode 71 and the second lower electrode 81.
  • the contact layer may be formed using Cr, Ti, Ni, or an alloy thereof for stable electrical contact, and the reflective layer may be formed on the contact layer using a reflective metal layer such as Al or Ag.
  • a reflective metal layer such as Al or Ag.
  • connection electrodes 72, 74, 82, and 84 may have a multilayer structure similar to the lower electrodes 71 and 81, for example, a contact layer / reflection layer / antidiffusion layer / antioxidation layer / etch prevention layer. These may be selected as the aforementioned materials of the lower electrodes 71 and 81, respectively.
  • connection electrodes 72, 74, 82, and 84 can be variously changed.
  • the first connection electrodes 72 and 74 are formed to connect the plurality of openings 63 to connect the first lower electrodes 71 evenly disposed on the entire light emitting surface.
  • the second connection electrodes 82 and 84 are formed to connect the plurality of openings 62 to connect the second lower electrodes 81 evenly disposed on the entire light emitting surface.
  • at least one of the first connection electrodes 72 and 74 and the second connection electrodes 82 and 84 is formed in a closed loop shape on the non-conductive reflecting film 91 so that the current uniformity of the entire light emitting surface is improved. Is further improved.
  • the closed loop shape is not limited to a complete closed loop shape, but also includes a closed loop shape in which a part is broken.
  • a closed loop outer second connection electrode 82 and an inner second connection electrode 84 are provided, and the outer first connection electrode 72 having a closed loop shape is formed between the inner and outer second connection electrodes 82 and 84.
  • the inner first connection electrode 74 is further provided inside the inner second connection electrode 84, and the center protrusion 85 protrudes from the inner second connection electrode 84 to protrude the inner first. It extends inward of the connection electrode 74.
  • the closed loop connection electrodes 72, 74, 82, and 84 connect a plurality of openings 62 and 63 to supply an equal current through each of the openings 62 and 63, and in any direction geometrically. Since they are generally uniform or symmetrical, they are very advantageous for improving the uniformity of the current supply and consequently the uniformity of the current density in the light emitting surface.
  • each of the openings 63 of the first lower electrode 71 may be connected to the first connection electrodes having the stripe shape or the finger shape, and the stripe shape may be formed between the first connection electrodes.
  • An embodiment in which the second lower electrodes 81 side openings 62 are connected by disposing second connection electrodes having a finger shape is also possible.
  • the shapes of the first connection electrode and the second connection electrode may be variously changed.
  • an additional reflecting film 95 is formed over the non-conductive reflecting film 91.
  • the additional reflecting film 95 is formed to cover the first connection electrodes 72 and 74 and the second connection electrodes 82 and 84.
  • the additional reflecting film 95 reflects the light transmitted through the non-conductive reflecting film 91 toward the plurality of semiconductor layers 30, 40, 50 to improve the brightness.
  • the additional reflecting film 95 may consist of a single insulating layer (eg SiO 2, SiN, TiO 2 , Al 2 O 3 , Su-8, etc.), the additional reflecting layer may be a second distribution Bragg to improve the reflectance. It is preferable to provide the reflector 95a.
  • the second distributed Bragg reflector 95a may have a thickness smaller than the first distributed Bragg reflector 91a.
  • the additional reflecting film 95 includes a lower dielectric film 95b for reducing the height difference between the non-conductive reflecting film 91 and the second distribution Bragg reflector 95a, and the upper electrodes 75, 85 and the second distribution.
  • An upper dielectric film 95c may be provided between the Bragg reflectors 95a.
  • the amount of light absorbed by the upper electrodes 75 and 85 may be reduced by making the refractive index of the upper dielectric layer 95c smaller than that of the second distribution Bragg reflector 95a.
  • a plurality of additional reflective film side openings 64 and 65 are formed in the additional reflective film 95.
  • the additional reflective film side openings 64 and 65 forming process is similar to the process of forming the openings 64 and 65 in the non-conductive reflective film 91 using a dry etching method, with the additional reflective film side openings 64 and 65 being used.
  • Upper surfaces of the exposed connection electrodes 72, 74, 82, and 84 may be affected by dry etching, and electrical contact may be degraded.
  • connection electrodes 72, 74, 82, and 84 may also have a multi-layer structure, for example, a contact layer / reflection layer / anti-diffusion layer / antioxidation layer / anti-etch layer like the lower electrodes 71 and 81.
  • materials such as Cr and Ti are mainly used as the contact layer, Ni, TiW, and the like may be used, and Al and Ag having good reflectance may be used.
  • the reflective layer may be made of a metal having excellent reflectance (eg, Ag, Al, or a combination thereof).
  • the diffusion barrier layer may be formed of at least one selected from Ti, Ni, Cr, W, TiW, and the like, and when high reflectance is required, Al, Ag, or the like may be used.
  • the etch stop layer is made of a material such as Ni, W, TiW, Cr, Pd, Mo, instead of Au, the bonding strength with the additional reflective film 95 can be maintained and the reliability can be improved.
  • the plurality of openings 64 and 65 are electrically connected to the first upper electrode 75 and the second upper electrode 85 with the first connecting electrodes 72 and 74 and the second connecting electrodes 82 and 84, respectively.
  • the openings 64 and 65 formed at appropriate positions and formed in the additional reflective film 95 are formed so as not to overlap the openings 64 and 65 formed in the non-conductive reflective film 91.
  • the first connection electrodes 72 and 74 and the second connection electrodes 82 and 84 connect the first lower electrode 71 and the second lower electrode 81 through the openings 64 and 65, respectively. Accordingly, the opening 65 passing through the first connection electrodes 72 and 74 below the first upper electrode 75 and the opening through the second connection electrodes 82 and 84 below the second upper electrode 85 will be described later. 64 are separated without mixing with each other (see FIG. 65).
  • the first upper electrode 75 and the second upper electrode 85 may be deposited on the additional reflective film 95 using sputtering equipment, E-beam equipment, or the like.
  • the first upper electrode 75 and the second upper electrode 85 are disposed to face each other. Some light passing through the additional reflective film 95 is reflected by the first upper electrode 75 and the second upper electrode 85.
  • the first upper electrode 75 and the second upper electrode 85 are connected to the first connection electrodes 72 and 74 and the second connection electrode 82 through the openings 64 and 65 formed in the additional reflective film 95, respectively. 84).
  • the first upper electrode 75 and the second upper electrode 85 may be electrically connected to an electrode provided outside (package, COB, submount, etc.) by a stud bump, a conductive paste, or a eutectic bonding method.
  • a stud bump In the case of eutectic bonding, it is important that the height difference between the first upper electrode 75 and the second upper electrode 85 is not large.
  • the semiconductor light emitting device according to the present example since the first upper electrode 75 and the second upper electrode 85 can be formed on the additional reflective film 95 by the same process, there is almost no height difference between the two electrodes. Thus there is an advantage in the case of eutectic bonding.
  • the uppermost portions of the first upper electrode 75 and the second upper electrode 85 are Ute such as Au / Sn alloy and Au / Sn / Cu alloy. It may be formed of a tick bonding material.
  • the first upper electrode 75 and the second upper electrode 85 may be electrically connected to the outside by soldering.
  • the first upper electrode 75 and the second upper electrode 85 may be provided with a reflective layer, a diffusion barrier layer, and a soldering layer.
  • the reflective layer is made of Ag, Al, and the like, and a contact layer (eg, Ti, Cr) may be added below the reflective layer.
  • the diffusion barrier layer may be at least one selected from Ni, Ti, Cr, W, TiW.
  • the soldering layer may be made of Au, may be made of Sn (soldering layer) / Au (antioxidation layer), may be made of Sn alone without Au, or may be made of Sn heat-treated. Lead free solder may be used as the solder.
  • the semiconductor light emitting device includes a substrate 10, a plurality of semiconductor layers, a light absorption preventing film 41, a current spreading conductive film 60, and a non-conductive material.
  • the reflective film 91, the first electrode parts 71 and 72, and the second electrode parts 81 and 82 are included.
  • the group III nitride semiconductor light emitting element will be described as an example.
  • Sapphire, SiC, Si, GaN and the like are mainly used as the substrate 10, and the substrate 10 may be finally removed.
  • This example may also be applied to a semiconductor light emitting device in which an electrode is formed on the first semiconductor layer 30 side or the conductive substrate 10 side from which the substrate 10 is removed when the substrate 10 is removed or has conductivity.
  • the positions of the first semiconductor layer 30 and the second semiconductor layer 50 may be changed, and are mainly made of GaN in the group III nitride semiconductor light emitting device.
  • the plurality of semiconductor layers may include a buffer layer 20 formed on the substrate 10, a first semiconductor layer 30 having a first conductivity (for example, Si-doped GaN), and a second semiconductor layer having a second conductivity different from the first conductivity. (Eg, Mg-doped GaN) and an active layer 40 interposed between the first semiconductor layer 30 and the second semiconductor layer 50 to generate light through recombination of electrons and holes (eg, InGaN / ( In) GaN multi-quantum well structure).
  • Each of the semiconductor layers 30, 40, and 50 may be formed in multiple layers, and the buffer layer 20 may be omitted.
  • the light absorption prevention layer 41 is formed on the second semiconductor layer 50 to correspond to the opening 62, and the light absorption prevention layer 41 has only a function of reflecting some or all of the light generated in the active layer 40. It may have a function of preventing a current from flowing directly below the second lower electrode 81 from the second lower electrode 81, or may have both functions.
  • the current spreading conductive film 60 is provided.
  • the current spreading conductive film 60 is formed between the light absorption preventing film 41 and the second lower electrode 81, and may be formed to transmit light and cover the entire second semiconductor layer 50. May be In particular, in the case of p-type GaN, the current spreading ability is poor, and in the case where the p-type semiconductor layer 50 is made of GaN, most of the current diffusion conductive film 60 should be assisted.
  • materials such as ITO and Ni / Au may be used as the current spreading conductive film 60.
  • the nonconductive reflecting film 91 reflects light from the active layer 40 toward the plurality of semiconductor layers 30, 40, and 50.
  • the nonconductive reflecting film 91 is formed on the plurality of semiconductor layers with a nonconductive material to reduce light absorption by the metal reflecting film.
  • the non-conductive reflecting film 91 functions as a reflecting film but is preferably made of a light transmitting material to prevent absorption of light.
  • the non-conductive reflecting film 91 may be formed of a light transmitting dielectric material such as SiO x , TiO x , Ta 2 O 5 , and MgF 2 . Can be configured.
  • the non-conductive reflecting film 91 is made of SiO x , since the non-conductive reflecting film 91 has a lower refractive index than the p-type semiconductor layer 50 (eg, GaN), the light having a critical angle or more may be partially reflected toward the semiconductor layers 30, 40, and 50. It becomes possible.
  • the non-conductive reflecting film 91 is made of a distributed Bragg reflector (DBR: DBR made of a combination of SiO 2 and TiO 2 )
  • DBR distributed Bragg reflector
  • Openings 62 and 63 are formed in the non-conductive reflecting film.
  • the first electrode portions 71 and 72 are in electrical communication with the first semiconductor layer 30 and supply one of electrons and holes, and the second electrode portions 81 and 82 are electrically connected to the second semiconductor layer 50. Communicates with each other and supplies the other of electrons and holes. At least one of the first electrode portion and the second electrode portion includes a lower electrode and a connection electrode.
  • the first electrode parts 71 and 72 and the second electrode parts 81 and 82 include lower electrodes 71 and 81 and connection electrodes 72 and 82, respectively.
  • the connection electrodes 72 and 82 may be electrodes for electrical connection with the outside.
  • the lower electrodes 71 and 81 do not extend long to reduce light absorption by the metal, and have an island shape corresponding to the openings 62 and 63, and at least a portion thereof is exposed by the openings 62 and 63. .
  • the connection electrodes 72 and 82 are provided on the non-conductive reflecting film 91 and are electrically connected to the lower electrodes 71 and 81 through the openings 62 and 63. When the openings 62 and 63 are formed in the non-conductive reflective film 91, the upper surfaces of the lower electrodes 71 and 81 may have an adverse effect on the electrical connection.
  • the upper layers of the lower electrodes 71 and 81 are partially removed to remove the adverse effects on the electrical connection, and the connecting electrodes 72 and 82 through the openings 62 and 63 are the lower electrodes from which the upper layers are removed. Contact with (71,81).
  • Such a semiconductor light emitting device can reduce the light absorption loss by using the non-conductive reflecting film 91 instead of the metal reflecting film.
  • the light absorption loss may be reduced by reducing the length or width of the metal structure between the non-conductive reflecting film 91 and the plurality of semiconductor layers 30, 40, and 50.
  • the number and distribution of the lower electrodes 71 and 81 and the openings 62 and 63 may be changed to improve current spreading.
  • 67 and 68 are views illustrating an example of a method of manufacturing a semiconductor light emitting device according to the present disclosure, and are described with reference to the second electrode portions 81 and 82, and the first electrode portions 71 and 72. The same process can proceed.
  • FIG. 67 is a view for explaining an example of the process of forming the opening 62.
  • the non-conductive reflecting film 91 is formed on the current spreading conductive film 60, and the etching process (for example, plasma etching) is performed. Opening 62 is formed through.
  • the opening 62 does not exclude the form of opening to the side as well as to the upper side of the semiconductor light emitting device.
  • an opening 62 is gradually formed as shown in FIG. 67 (a), and a portion of the upper surface of the second lower electrode 81 is exposed as shown in FIG. 67 (b).
  • the height difference between the upper rim 91r1 of the opening 62 and the top surface of the non-conductive reflecting film 91 is reduced from FIG. 67 (a).
  • the periphery of the second lower electrode 81 is exposed by the opening 62 as shown in FIG. 67C, and the inclined surface is formed on the non-conductive reflective film 91 due to the opening 62.
  • the second lower electrode 81 is exposed by the opening 62.
  • the width of the opening 62 may be selected to expose the periphery of the second lower electrode 81 as illustrated in FIG. 67D, or may be selected to expose only a portion of the second lower electrode 81 as illustrated in FIG. 67B. As shown in FIG.
  • the periphery of the opening 62 when the periphery of the opening 62 is exposed and the second connection electrode 82 surrounds the second lower electrode 81, that is, the upper contact and side surfaces of the second lower electrode 81 are electrically connected.
  • the stability of can be further improved.
  • the heat treatment may further strengthen and stabilize the connection between the second lower electrode 81 and the second connection electrode 82.
  • the exposed surface of the non-conductive reflecting film 91 is etched to form the upper rim of the opening 62. In FIG. 67 (b), the height difference of the upper rim 91r2 is higher in FIG. 67D than in the upper rim 91r1. There is a reduction, which is more advantageous for subsequent processes (especially for non-conductive reflective film formation processes).
  • FIG. 68 is a view for explaining an example of the layer structure of the second lower electrode 81 and is an enlarged view of a part of the opening 62 formed by the dry etching process.
  • a halogen gas containing an F group eg, CF 4 , C 2 F 6 , C 3 F 8 , SF 6, etc.
  • the second lower electrode 81 may include a plurality of layers.
  • the second lower electrode 81 may include the contact layer 81a, the reflective layer 81b, the diffusion barrier 81c, the antioxidant layer 81d, and the etch stop layer 81e which are sequentially formed on the current diffusion conductive film 60; Protective layer).
  • the reflective layer 81b may be omitted.
  • a reflective layer / diffusion prevention layer is formed a plurality of times (for example, Al / Ni / Al / Ni / Al / Ni) in order to prevent the reflective layer from bursting or protruding.
  • each reflective layer is not formed too thick and the diffusion barrier layer also functions to prevent bursting can be considered.
  • the first lower electrode 71 may also have the same or similar layer structure as the second lower electrode 81.
  • the contact layer 81a is preferably made of a material which makes good electrical contact with the current spreading conductive film 60 (eg, ITO). Materials such as Cr and Ti are mainly used as the contact layer 81a, and Ni and TiW may also be used, and Al and Ag having good reflectance may be used.
  • the reflective layer 81b may be made of a metal having good reflectance (eg, Ag, Al, or a combination thereof). The reflective layer 81b reflects the light generated by the active layer 40 toward the plurality of semiconductor layers 30, 40, and 50. The reflective layer 81b may be omitted.
  • the diffusion barrier layer 81c prevents the material of the reflective layer 81b or the material of the antioxidant layer 81d from diffusing into another layer.
  • the diffusion barrier layer 81c may be formed of at least one selected from Ti, Ni, Cr, W, TiW, and the like, and when a high reflectance is required, Al, Ag, or the like may be used.
  • the antioxidant layer 81d may be made of Au, Pt, or the like, and may be any material as long as it is exposed to the outside and does not oxidize well in contact with oxygen. As the antioxidant layer 81d, Au having good electrical conductivity is mainly used.
  • the etch stop layer 81e is a layer exposed in the dry etching process for forming the opening 62. In this example, the etch stop layer 81e is the uppermost layer of the second lower electrode 81.
  • the etch stop layer 81e When Au is used as the etch stop layer 81e, not only the bonding strength with the non-conductive reflecting film 91 is weak, but a portion of Au may be damaged or damaged during etching. Therefore, when the etch stop layer 81e is made of a material such as Ni, W, TiW, Cr, Pd, Mo, or the like instead of Au, the bonding strength with the non-conductive reflecting film 91 may be maintained, thereby improving reliability.
  • the contact layer 81a may have a thickness of 5A to 500A
  • the reflective layer 81b may have a thickness of about 500A to 10000A
  • the diffusion barrier layer 81c may have a thickness of about 100A to 5000A
  • the anti-oxidation layer 81d may have a thickness of about 100A to 5000A
  • the etch stop layer 81e may have a thickness of about 10A to 1000A.
  • the lower electrode of the multilayer structure may be partially omitted or a new layer may be added as necessary.
  • the etch stop layer 81e protects the second lower electrode 81 and, in particular, prevents damage to the antioxidant layer 81d.
  • the same process may be performed on the first lower electrode 71.
  • a halogen gas containing an F group eg, CF 4 , C 2 F 6 , C 3 F 8 , SF 6
  • the etch stop layer 81e is preferably made of a material having excellent etching selectivity in such a dry etching process.
  • the antioxidant layer 81d may be damaged or damaged in the dry etching process. Therefore, Cr or Ni is suitable as a material of the etch stop layer 81e in view of the etching selectivity. Ni or Cr does not react with or slightly reacts with the etching gas of the dry etching process, and does not etch to serve to protect the second lower electrode 81.
  • a material such as an insulating material or an impurity may be formed on the upper layer of the second lower electrode 81 due to the etching gas.
  • a material may be formed by reacting the halogen etching gas including the F group with the upper metal of the electrode.
  • the halogen etching gas including the F group For example, at least a portion of Ni, W, TiW, Cr, Pd, Mo, and the like as a material of the etch stop layer 81e may react with an etching gas of a dry etching process to form a material (for example, NiF).
  • the material formed as described above may cause a decrease in electrical characteristics (eg, an increase in operating voltage) of the semiconductor light emitting device.
  • Ni, W, TiW, Cr, Pd, Mo, etc. do not react with the etching gas to form a material or form a very small amount of material. It is preferable to suppress material generation or to form a small amount, and Cr is more suitable as a material of the etch stop layer 81e than Ni in this respect.
  • the upper layer of the second lower electrode 81 that is, the portion corresponding to the opening 62 of the etch stop layer 81e is removed by a wet etching process (second etching process) in consideration of the formation of a material.
  • second etching process a wet etching process
  • the antioxidant layer 81d corresponding to the opening 62 is exposed.
  • the material is etched and removed together with the etch stop layer 81e. As such, the material is removed to improve the electrical contact between the second lower electrode 81 and the second connection electrode 82, thereby preventing the electrical characteristics of the semiconductor light emitting device from being lowered.
  • the same process or configuration may be applied to the first lower electrode 71 and the opening 63, of course.
  • the first etching process may be performed by wet etching to form the opening 62.
  • the non-etching liquid of the conductive reflective film 91 such as HF, BOE, NHO 3, HCl may be used alone or in combination in an appropriate concentration.
  • the etching selectivity of the etching prevention layer 81e is excellent for protecting the antioxidant layer 81d.
  • Cr is suitable as a material of the etch stop layer 81e.
  • the etch stop layer 81e corresponding to the opening 62 may be removed by a subsequent wet etching process (second etching process).
  • the non-conductive reflecting film 91 is formed by using a metal such as Al and Ag having high reflectance on the non-conductive reflecting film 91 using, for example, sputtering equipment, E-beam equipment, or the like.
  • the second connection electrode 82 is deposited thereon and fills the opening 62 (83), likewise the first connection electrode 71 is deposited. Some of the openings 63 communicate with the grooves 61 exposing the first semiconductor layer 30, respectively, and the remaining openings 62 expose the second lower electrodes 81 formed on the current spreading conductive film 60. do.
  • the first connection electrode 72 and the second connection electrode 82 are electrically connected to the first lower electrode 71 and the second lower electrode 81 through the openings 62 and 63, respectively.
  • connection electrodes 72 and 82 may be formed using Cr, Ti, Ni, or alloys thereof to ensure stable electrical contact with the lower electrodes 71 and 81.
  • the connection electrodes 72 and 82 may be electrically connected to the external electrodes, respectively, to supply electrons to the first semiconductor layer 30 and to supply holes to the second semiconductor layer 50.
  • a material that inhibits electrical contact between the lower electrodes 71 and 81 and the connection electrodes 72 and 82 is removed, thereby preventing the electrical characteristics of the semiconductor light emitting device from being lowered.
  • a semiconductor light emitting device including lower electrodes 71 and 81 having good bonding force with the non-conductive reflecting film 91 and making good electrical contact with the connecting electrodes 72 and 82 can be manufactured.
  • FIG. 69 is a view for explaining another example of the semiconductor light emitting device according to the present disclosure, in which the first connection electrode 72 and the second connection electrode 82 are separated from each other on the non-conductive reflective film 91.
  • the first connection electrode 72 and the second connection electrode 82 may be eutectic bonded, soldered or wire bonded with the external electrode.
  • the first connection electrode 72 and the second connection electrode 82 are formed to have a certain area to reflect light that is not reflected by the non-conductive reflective film 91.
  • the external electrode may be a conductive portion provided in the submount, a lead frame of the package, an electrical pattern formed on the PCB, and the like, and the external electrode may be provided independently of the semiconductor light emitting device.
  • the first connection electrode 72 and the second connection electrode 82 may have a height enough to couple with the package using separate bumps, and are deposited to a height high enough to combine with the package as shown in FIG. 2. It may be.
  • the first connection electrode 72 includes a first pad portion 72a and a first current spreading portion 72b
  • the second connection electrode 82 includes a second pad portion 82a and a second portion.
  • a current spreading unit 82b The first pad portion 72a and the first current spreading portion 72b are integrally formed, and the second pad portion 82a and the second current spreading portion 82b are integrally formed.
  • a dotted line is a reference line for dividing, and does not mean a line that is physically separated.
  • the first pad part 72a may connect the plurality of first lower electrodes 71 through a plurality of openings formed in the non-conductive reflective film 91, and the first pad part 72a may be bonded to the external electrode.
  • the first current spreading unit 72b extends from the first pad portion 72a and connects the plurality of first lower electrodes 71.
  • the second pad part 82a may be formed around the first current spreading unit 72b to connect the plurality of second lower electrodes 81 and be bonded to the external electrode.
  • the second current spreading unit 82b is formed around the first pad unit 72a after the second pad unit 82a and connects the plurality of second lower electrodes 81. Since current spreading is more problematic on the p side, it may be considered to form the second connection electrode 82 around the edge of the light emitting surface and to form the first connection electrode 72 inside. As shown in FIG. 69, it is also conceivable that the light absorption prevention film is omitted below the second lower electrode 81, in which case the light absorption prevention film forming process is omitted, thereby providing a process advantage.
  • FIG. 70 is a view for explaining another example of the semiconductor light emitting device according to the present disclosure.
  • the semiconductor light emitting device includes a plurality of island type first lower electrodes 71 and a plurality of island type second lower electrodes 81.
  • a plurality of openings 62 and 63 are formed in the non-conductive reflecting film 91 corresponding thereto.
  • An island type refers to a shape that does not generally extend to one side such as a polygon such as a circle, a triangle, a rectangle, or the like.
  • the second connection electrode 82 connects the second lower electrode 81 through the plurality of openings 62, and the first connection electrode 72 connects the first lower electrode 71 through the plurality of openings 63.
  • the light absorption prevention layer 41 may be provided under the second lower electrode 81, and the uppermost layer (eg, an etch stop layer) of the lower electrodes 71 and 82 corresponding to the openings 62 and 63 may be removed and connected. In contact with the electrodes 72, 82.
  • the uppermost layer eg, an etch stop layer
  • the lower electrodes 71 and 81 are omitted, the first connection electrode 72 is in direct contact with the first semiconductor layer 30, and the second connection electrode 82 is a current spreading conductive film 60; :
  • electrical contact may not be good.
  • Cr or Ti which may be the lowest layer of the connection electrodes 72 and 82, contacts ITO, the contact resistance may not be good. This is because the process of forming an opening in the non-conductive reflecting film 91 to be described later is likely to damage the surface of the ITO and the exposed surface of the first semiconductor layer 30, so that the contact resistance is large.
  • the first lower electrode 71 is interposed between the first semiconductor layer 30 and the first connection electrode 72, and the second connection is made between the current diffusion conductive film 60 and the second connection electrode 82.
  • the lower electrode 81 By interposing the lower electrode 81, the electrical connection is stabilized and the contact resistance is reduced. Meanwhile, in the process of forming the openings 62 and 63 in the non-conductive reflecting film 91, the upper surfaces of the lower electrodes 71 and 81 may be affected, so that the electrical connection may be poor.
  • the electrodes 71 and 81 are provided with an etch stop layer (protective layer) on the top to protect the lower layer structure in the etching process for forming the opening, and correspond to the openings 62 and 63 after the openings 62 and 63 are formed.
  • the etch stop layer is removed and the connection electrodes 72 and 82 are connected to the lower electrodes 71 and 81.
  • the lower electrodes 71 and 81 may include a contact layer / reflective layer / diffusion barrier layer (barrier layer) / antioxidation layer) / etch prevention layer (protective layer).
  • the first lower electrode 71 and the second lower electrode 81 do not necessarily have the same layer structure.
  • the plurality of openings 62 and 63 are provided as current supply passages, and the lower electrodes 71 and 81 are formed in a plurality of island shapes corresponding to the plurality of openings 62 and 63, respectively. (41) improves current spreading.
  • the lower electrodes 71 and 81 allow a smooth current supply between the connecting electrodes 72 and 82 and the plurality of semiconductor layers and lower the operating voltage.
  • the nonconductive reflecting film 91 may be made of a single dielectric layer or may have a multilayer structure.
  • the non-conductive reflecting film 91 may include a dielectric film, a distributed Bragg reflector, and a clad film sequentially stacked. The layer configuration of the nonconductive reflecting film 91 will be further described later.
  • 71 is a view for explaining another example of the semiconductor light emitting device according to the present disclosure, in which the semiconductor light emitting device is formed on the non-conductive reflective film 91 to be insulated from the first connection electrode 72 and the second connection electrode 82.
  • Neutral film 92 is included.
  • Neutral film 92 The current of the anode and cathode is not applied, and may be an insulating material or a metal, or both, and may be used for light reflection or heat dissipation.
  • the neutral layer 92 is a heat dissipation pad 92 formed of a metal apart from the first connection electrode 72 and the second connection electrode 82.
  • the heat dissipation pad 92 may be used as a heat dissipation passage by contacting an external device provided with the external electrode.
  • an example of contacting the connecting electrode without removing the upper layer (for example, the etch stop layer) of the first lower electrode 71 and the second lower electrode 81 is possible.
  • the etch stop layer or the protective layer does not form a material that inhibits electrical contact in the opening forming process, or when the amount of the material is extremely small, may be connected without removing the upper layer.
  • first lower electrode 71 and the second lower electrode 81 have an island shape, it is preferable to improve the current uniformity evenly distributed without being biased as a whole.
  • the first branch electrode 78 and the second branch electrode 88 are introduced to improve current spreading, but the branch electrode is formed by appropriately mixing the island type first lower electrode 71 and the second lower electrode 81. To prevent unnecessary growth.
  • FIG. 72 is a view for explaining another example of the semiconductor light emitting device according to the present disclosure.
  • the semiconductor light emitting device includes a plurality of semiconductor layers 30, 40, and 50, a light absorption prevention film 41, and a current diffusion conductive film 60. And first electrode portions 71, 72, 75, second electrode portions 81, 82, 85, non-conductive reflective film 91, and neutral film 95.
  • the neutral film 95 is an insulating film 95 made of an insulating material.
  • the first electrode portions 71, 72, and 75 are in electrical communication with the first semiconductor layer 30, and supply one of electrons and holes, and the second electrode portions 81, 82, and 85 are formed of the second semiconductor layer ( It is in electrical communication with 50) and supplies the other of electrons and holes.
  • the non-conductive reflecting film 91 is formed on the plurality of semiconductor layers so as to reflect the light generated in the active layer 40 toward the first semiconductor layer, and the openings 62 and 63 are formed.
  • the insulating film 95 is formed on the non-conductive reflective film 91 so as to cover the connection electrodes 72 and 82, and the openings 64 and 65 are formed.
  • At least one of the first electrode portion and the second electrode is provided on the lower electrode that is at least partially exposed by the non-conductive reflecting film side openings 62 and 63, and is provided on the non-conductive reflecting film 91 and through the openings 62 and 63.
  • the first electrode parts 71, 72, and 75 include a first lower electrode 71, a first connection electrode 72, and a first upper electrode 75.
  • the second electrode parts 81, 82, and 85 include a second lower electrode 81, a second connection electrode 82, and a second upper electrode 85.
  • the periphery of the lower electrodes 71 and 81 is exposed by the openings 62 and 63, and the connection electrodes 72 and 82 contact the upper and side surfaces of the lower electrodes 71 and 81.
  • This can further improve the stability of the electrical connection.
  • the etch stop layer as the uppermost layer of the lower electrodes 71 and 81 protects the anti-oxidation layer below it, and is removed by wet etching after the opening is formed to expose the antioxidant layer, and the connection electrodes 72 and 82 are exposed. It can contact this antioxidant film.
  • the first connection electrode 72 and the second connection electrode 82 may include a contact layer and a reflective layer.
  • the first connection electrode 72 and the second connection electrode 82 may have stable electrical contact with the first lower electrode 71 and the second lower electrode 81.
  • the contact layer may be formed using Cr, Ti, Ni, or an alloy thereof, and the reflective layer may be formed on the contact layer using a reflective metal layer such as Al or Ag.
  • the connection electrodes 72 and 82 may include contact layers (eg, Cr, Ti, etc.) / Reflective layers (eg, Al, Ag, etc.), diffusion barrier layers (eg, Ni, etc.), and bonding layers (eg, Au / Sn alloys). , Au / Sn / Cu alloy, Sn, heat-treated Sn, etc.).
  • the nonconductive reflecting film 91 may be formed in a multilayer structure including a single dielectric layer or a distributed Bragg reflector.
  • the insulating layer 95 insulates the connection electrodes 72 and 82 and may be formed of a material such as SiO 2 .
  • the semiconductor light emitting device includes a plurality of semiconductor layers, a light absorption preventing film 41, a current diffusion conductive film 60, and a non-conductive reflecting film 91. And an insulating film 95, first electrode portions 71, 72, and 75 and second electrode portions 81, 82, and 85.
  • the first electrode parts 71, 72, and 75 are in electrical communication with the first semiconductor layer 30, and supply one of electrons and holes, and the second electrode parts 81, 82, and 85 are connected to the second semiconductor layer ( It is in electrical communication with 50) and supplies the other of electrons and holes.
  • At least a portion of the lower electrode 71 is exposed by the opening 63 formed in the nonconductive reflective film 91 and contacts the exposed first semiconductor layer 30 by etching.
  • the lower electrode 81 is at least partially exposed by the opening 62 formed in the nonconductive reflecting film 91 and contacts the current spreading conductive film 60.
  • the connection electrodes 72 and 82 are formed on the non-conductive reflecting film 91 and are electrically connected to the lower electrodes 71 and 81 through the openings 62 and 63, respectively.
  • a plurality of openings 62 and 63 are formed in the non-conductive reflecting film 91 so that current can be smoothly supplied, and the first connection electrode 72 is connected to the first semiconductor layer 30. ), And the second connection electrode 82 connects a plurality of other openings 62 through the current spreading conductive film 60.
  • the openings 62 and 63 include the case of opening to the side as well as the upper side of the semiconductor light emitting device.
  • the insulating film 95 is formed on the non-conductive reflective film 91 to cover the connection electrodes 72 and 82.
  • the first electrode portion and the second electrode portion include upper electrodes 75 and 85 on the insulating film 95, respectively.
  • the upper electrodes 75 and 85 are electrically connected to the connection electrodes 72 and 82 through the openings 64 and 65 formed in the insulating film 95.
  • the openings 64 and 65 include the case of opening to the side as well as the upper side of the semiconductor light emitting device.
  • the upper electrodes 75 and 85 may be electrically connected to the external electrodes by a method such as eutectic bonding, soldering, wire bonding, or the like. Since the upper electrodes 75 and 85 are provided on the insulating film 95, the first connection electrode 72 and the second connection electrode 82 may be designed more freely in shape or distribution on the non-conductive reflecting film 91. Therefore, the first lower electrode 71 and the second lower electrode 81 formed in the form of a plurality of islands are not particularly limited in position, and, for example, the first lower electrode 71 and the second lower portion of the entire emission surface. The electrode 81 may be formed under both the first upper electrode 75 and the second lower electrode 81.
  • the first lower electrode 71 and the second lower electrode 81 may have a plurality of island shapes in which a light emitting surface (a plurality of semiconductor layers 30, 40, and 50 are viewed in a top view). Plane), or may be arranged symmetrically about the center of the light emitting surface (e.g., see FIG. 80).
  • some embodiments may extend the first lower electrode 71 and the second lower electrode 81 in a band shape. Therefore, the n-side branch electrode is not formed long on the exposed first semiconductor layer 30 by mesa etching the second semiconductor layer 50 and the active layer 40 or the p-side branch electrode is formed on the current diffusion conductive film. Even if the island-type first lower electrode 71 and the second lower electrode 81 can be evenly distributed, the structure of the current distribution is more favorable and the structure is more advantageous in reducing light absorption by the metal.
  • the nonconductive reflecting film 91 reflects light from the active layer 40 toward the plurality of semiconductor layers 30, 40, and 50.
  • the nonconductive reflecting film 91 is formed of a nonconductive material to reduce light absorption by the metal reflecting film.
  • the nonconductive reflecting film 91 may be made of a single dielectric layer or may have a multilayer structure.
  • the nonconductive reflecting film 91 includes a dielectric film 91b, a first distributed Bragg reflector 91a and a clad film 91c sequentially stacked.
  • the first electrode parts 71, 72, and 75 are in electrical communication with the first semiconductor layer 30, and supply one of electrons and holes, and the second electrode parts 81, 82, and 85 are connected to the second semiconductor layer ( It is in electrical communication with 50) and supplies the other of electrons and holes.
  • a height difference occurs due to the same structure as the lower electrodes 71 and 81. Therefore, prior to the deposition of the distributed Bragg reflector 91a, which requires precision, the dielectric film 91b having a predetermined thickness is formed, whereby the distributed Bragg reflector 91a can be stably manufactured, and also helps to reflect light. Can give
  • the material of the dielectric film 91b is suitably SiO 2 , and the thickness thereof is preferably 0.2 ⁇ m to 1.0 ⁇ m. If the thickness of the dielectric film 91b is too thin, it may be insufficient to cover the lower electrodes 71 and 81 having a height of about 2 ⁇ m to 3 ⁇ m. If the thickness of the dielectric film 91 b is too thick, the subsequent openings 62 and 63 may be formed. It can be a burden. The thickness of the dielectric film 91b may then be thicker than the thickness of the subsequent distribution Bragg reflector 91a. In addition, it is necessary to form the dielectric film 91b in a manner more suitable for securing device reliability.
  • the dielectric film 91b made of SiO 2 is preferably formed by Chemical Vapor Deposition (CVD), and particularly, Plasma Enhanced CVD (PECVD).
  • CVD Chemical Vapor Deposition
  • PECVD Plasma Enhanced CVD
  • the chemical vapor deposition method is advantageous compared to physical vapor deposition (PVD), such as E-Beam Evaporation.
  • PVD physical vapor deposition
  • the dielectric film 91b is preferably formed by chemical vapor deposition to reduce the height difference and ensure reliable insulation. Therefore, it is possible to secure the function as a reflective film while ensuring the reliability of the semiconductor light emitting element.
  • the distributed Bragg reflector 91a is formed on the dielectric film 91b.
  • the Distribution Bragg reflector 91a may be a physical vapor deposition (PVD), and among them, an electron beam deposition (E-Beam Evaporation) method. Or by sputtering or thermal evaporation.
  • the distribution Bragg reflector 91a is preferably formed of a light transmitting material (eg, SiO 2 / TiO 2 ) to prevent light absorption.
  • the dielectric film 91b may be formed of a dielectric (eg, SiO 2 ) having a refractive index smaller than the effective refractive index of the distribution Bragg reflector 91a.
  • the effective refractive index refers to the equivalent refractive index of light that can travel in a waveguide made of materials having different refractive indices.
  • the clad film 91c may also be made of a material (eg, Al 2 O 3, SiO 2, SiON, MgF, CaF) that is lower than the effective refractive index of the distribution Bragg reflector 91a.
  • a material eg, Al 2 O 3, SiO 2, SiON, MgF, CaF.
  • the optical waveguide is a structure that guides the light by using total reflection by surrounding the light propagation part with a material having a lower refractive index. From this point of view, when the distributed Bragg reflector 91a is viewed as the propagation section, the dielectric film 91b and the clad film 91c surround the propagation section and can be viewed as part of the optical waveguide.
  • the semiconductor light emitting device includes a substrate 10, a plurality of semiconductor layers 30, 40, and 50, and a light absorption prevention film 41. And a current spreading conductive film 60, a nonconductive reflecting film 91, a neutral film 95, first electrode portions 71, 72, and 75 and second electrode portions 81, 82, and 85.
  • Neutral film 95 in this example is an additional reflective film 95 for reducing light loss.
  • the nonconductive reflecting film 91 reflects light from the active layer 40 toward the plurality of semiconductor layers 30, 40, and 50.
  • the nonconductive reflecting film 91 may be made of a single dielectric layer or may have a multilayer structure.
  • the additional reflecting film 95 is formed on the non-conductive reflecting film 91 to reflect the light transmitted through the non-conductive reflecting film 91 toward the first semiconductor layer 30 and covers the connection electrodes 72 and 82. Although the light generated from the active layer 40 is reflected by the non-conductive reflective film 91 to the plurality of semiconductor layers 30, 40, and 50, some of the light may pass through or leak from the non-conductive reflective film 91. .
  • the additional reflecting film 95 reflects the light transmitted through the non-conductive reflecting film 91 to the plurality of semiconductor layers 30, 40, and 50, thereby reducing light loss and improving luminance of the semiconductor light emitting device.
  • FIG. 75 is a view illustrating an example of a portion in which light is more likely to be transmitted from the nonconductive reflecting film, and is illustrated by the structures under the nonconductive reflecting film 900 (eg, electrodes 700, 800, steps, and the like).
  • the nonconductive reflecting film 900 may include a distributed Bragg reflector.
  • the distribution Bragg reflector may consist of multiple layers of material, and each material layer must be well formed to a specially designed thickness in order to function as a reflective film.
  • the non-conductive reflecting film 900 does not reflect all the incident light, but may be partially transmitted. In particular, as illustrated in FIG.
  • each material layer of the non-conductive reflective film 900 is hard to be formed to a designed thickness (in dotted lines). ), And the reflection efficiency is deteriorated in this region so that the light L11 and L12 can be transmitted.
  • the additional reflective film 95 may be formed of a non-metal or a non-conductive material to reduce light absorption, and may be formed of a single dielectric film, but may have a multilayer structure to increase reflectance. It is good.
  • the additional reflective film 95 may include a distribution Bragg reflector 95a.
  • the additional reflecting film 95 includes a lower dielectric film 95b between the distributed Bragg reflector 95a and the non-conductive reflecting film 91 and an upper dielectric film between the distributed Bragg reflector 95a and the upper electrodes 75 and 85. It may include at least one of (95c).
  • the lower dielectric layer 95b may cover the connection electrodes 72 and 82 to alleviate the height difference.
  • the distribution Bragg reflector 95a may have a structure similar to that of the Distribution Bragg reflector 91a described in FIG. 73.
  • the distributed Bragg reflector 95a may be formed by repeated stacking of SiO 2 / TiO 2 , SiO 2 / Ta 2 O 2 , or SiO 2 / HfO, and SiO 2 / TiO 2 has good reflection efficiency for blue light.
  • SiO 2 / Ta 2 O 2 , or SiO 2 / HfO will have good reflection efficiency.
  • the lower dielectric film 95b and the upper dielectric film 95c may be formed of a material having a refractive index smaller than that of the distribution Bragg reflector 95a so that the additional reflective film 95 may have an optical waveguide structure.
  • the lower dielectric film 95b is in contact with the connecting electrodes 72 and 82, it is preferable to select a material having good bonding strength with the connecting electrodes 72 and 82.
  • the upper dielectric film 95c is formed of the upper electrode 75, 85) and it is preferable to select a material having good bonding strength.
  • the additional reflecting film 95 includes a metal film.
  • the metal reflective film 95a is preferably formed of metals Al and Ag having good reflectances, but is preferably formed to avoid portions where the openings 64 and 65 are to be formed.
  • the metal reflective film 95a may be electrically insulated by the lower dielectric film 95b and the upper dielectric film 95c.
  • the additional reflective film 95 is partially formed, for example, only in a specific region (for example, a step or a region having a high height difference) of the non-conductive reflective film 91 is possible.
  • the first upper electrode 75 and the second upper electrode 85 are disposed to face each other on the additional reflective film 95, and are respectively connected to the first connection electrode through the openings 64 and 65 formed in the additional reflective film 95.
  • 72 is electrically connected to the second connection electrode 82. Electrons are supplied to the first semiconductor layer 30 through the first upper electrode 75, the first connection electrode 72, and the first lower electrode 71, and the second upper electrode 85 and the second connection electrode. Holes are supplied to the second semiconductor layer 50 through the (82) -second lower electrode 81.
  • the first upper electrode 75 and the second upper electrode 85 may be eutectic bonding electrodes or soldering electrodes.
  • a heat dissipation pad 92 may be provided above the additional reflecting film 95 and spaced apart from the upper electrodes 75 and 85.
  • the non-conductive reflecting film 91 In the semiconductor light emitting device, light absorption is reduced by using the non-conductive reflecting film 91 instead of the metal reflecting film.
  • the plurality of semiconductor layers 30 and 40 may be formed by the structure of the connection electrodes 72 and 82 and the lower electrodes 71 and 81 through the plurality of openings 62 and 63 formed to be evenly mixed with the non-conductive reflecting film 91.
  • Facilitate current spreading to 50 Therefore, it is not necessary to form a long metal band like a branch electrode on the first semiconductor layer 30 and / or the second semiconductor layer 50 to spread the current, or to form a small number, and as a result, Light absorption by the metal is further reduced.
  • even light transmitted through the non-conductive reflecting film 91 is reflected by the additional reflecting film 95 to contribute to the improvement of the brightness.
  • FIG. 76 is a view illustrating still another example of the semiconductor light emitting device according to the present disclosure.
  • the semiconductor light emitting device includes a substrate 10, a plurality of semiconductor layers 30, 40, and 50, a light absorption prevention film 41, and a current diffusion.
  • the conductive film 60, the non-conductive reflecting film 91, the additional reflecting film 95, the first electrode portions 71, 72, 75 and the second electrode portions 81, 82, 85 are included.
  • the nonconductive reflecting film 91 includes a dielectric film 91b, a first distributed Bragg reflector 91a, and a clad film 91c.
  • the additional reflecting film 95 includes a dielectric film 95b, a second distributed Bragg reflector 95a, and a clad film 95c.
  • connection electrodes 72 and 82 and the lower electrodes 71 and 81 are in contact with each other through the openings 62 and 63 formed in the non-conductive reflective film 91.
  • the upper electrodes 75, 85 contact the connecting electrodes 72, 82 through the openings 64, 65 formed in the additional reflecting film 95.
  • the non-conductive reflecting film 91 may have, for example, the configuration of the non-conductive reflecting film described in FIG. 73, and the additional reflecting film 95 may have, for example, the configuration of the additional reflecting film described in FIG. 74. have.
  • the first connection electrode 72 and the second connection electrode 82 may have a stripe shape alternately disposed. Alternatively, it may have a pinched finger shape. As another example, at least one of the first connection electrode 72 and the second connection electrode 82 may have a closed loop shape.
  • the upper electrodes 75 and 85 may be electrically connected to electrodes provided outside (package, COB, submount, etc.) by a method such as stud bump, conductive paste, eutectic bonding, soldering, and wire bonding. At least one of the upper electrodes 75 and 85 may have a multilayer structure. In this example, the first upper electrode 75 and the second upper electrode 85 each have a multilayer.
  • the uppermost portions 85a and 85b of the upper electrode may be formed of a eutectic bonding material such as Au / Sn alloy or Au / Sn / Cu alloy.
  • the first upper electrode 75 and the second upper electrode 85 may be electrically connected to the outside by soldering.
  • the first upper electrode 75 and the second upper electrode 85 may be provided with reflective layers 75c and 85c, diffusion diffusion layers 75b and 85b, and soldering layers 75a and 85a.
  • the reflective layers 75c and 85c may be made of Ag, Al, or the like, and contact layers (eg, Ti and Cr) may be added below the reflective layers 75c and 85c.
  • the diffusion barrier layers 75b and 85b are made of at least one selected from Ni, Ti, Cr, W, and TiW, and prevent the solder material from penetrating into the plurality of semiconductor layers.
  • soldering layers 75a and 85a may be made of Au, or may be made of Sn (soldering layer) / Au (antioxidation layer), may be made of Sn alone without Au, or may be heat-treated Sn soldering layers 75a and 85a. ) Can be achieved. Lead free solder may be used as the solder.
  • the upper electrodes 75 and 85 include the first layers 75c and 85c and the second layers 75b and 85b.
  • the first layers 75c and 85c may be formed of a stress relaxation layer or a crack prevention layer to prevent cracks when the semiconductor light emitting device is fixed to the external electrode, and the second layers 75b and 85b may be formed of a first layer. It may be formed as a burst prevention layer that prevents the layers 75c and 85c from bursting.
  • first layers 75c and 85c may be formed of a reflective layer that is made of Al and Ag to reflect light passing through the additional reflective film 91.
  • the second layers 75b and 85b are formed of a material such as Ti, Ni, Cr, W, TiW, and formed of a barrier layer to prevent the solder material from penetrating into the semiconductor light emitting device during bonding such as soldering. Can be.
  • the first layers 75c and 85c and the second layers 75b and 85b can be formed with various combinations of these functions.
  • a contact layer (not shown) may be further provided under the first layers 75c and 85c with a metal such as Cr, Ti, Ni, or the like to improve the bonding force with the additional reflective film.
  • the upper electrodes 75, 85 have top layers 75a, 85a.
  • the top layers 75a and 85a are generally made of a metal having good adhesion, excellent electrical conductivity, and strong oxidation resistance.
  • it may consist of Au, Sn, AuSn, Ag, Pt and their alloys or combinations thereof (e.g. Au / Sn, Au / AuSn, Sn, heat-treated Sn), especially as long as these conditions are met. It is not limited.
  • FIG. 77 to 80 are diagrams illustrating another example of a method of manufacturing a semiconductor light emitting device according to the present disclosure. Referring to FIG. 76, an example of a cross section taken along line A-A shown in FIG. 80 is described.
  • a plurality of semiconductor layers 30, 40, 50 are grown on the substrate 10.
  • a buffer layer eg, AlN or GaN buffer layer
  • an undoped semiconductor layer eg, un-doped GaN
  • a first conductive material are formed on the substrate 10 (eg, Al 2 O 3 , Si, SiC).
  • 1 semiconductor layer 30 eg Si-doped GaN
  • active layer 40 that generates light through recombination of electrons and holes (InGaN / (In) GaN multi-quantum well structure)
  • the second semiconductor layer 50 eg, Mg-doped GaN is grown.
  • the buffer layer 20 may be omitted, and each of the plurality of semiconductor layers 30, 40, and 50 may be formed in multiple layers (see FIG. 76).
  • the first semiconductor layer 30 and the second semiconductor layer 50 may be formed with opposite conductivity, but are not preferable in the case of a group III nitride semiconductor light emitting device.
  • the light absorption prevention layer 41 is formed on the second semiconductor layer 50 using SiO 2 , TiO 2, or the like.
  • the light absorption prevention layer 41 may be formed to be slightly wider than the second lower electrode 81 at a position corresponding to the second lower electrode 81 to be formed later.
  • the light absorption prevention layer 41 is preferably evenly distributed throughout the light emitting surface, and the second lower electrode 81 emits semiconductor light in consideration of the fact that p-GaN (eg, Mg-doped GaN) has a relatively poor current spreading. Since the light is distributed from the edge of the device to the inside, a light absorption prevention film 41 may be formed accordingly.
  • the light absorption prevention film 41 is formed in a plurality of island shapes.
  • a current diffusion conductive layer 60 covering the light absorption prevention layer 41 is formed on the second semiconductor layer 50 using a light-transmitting material having good conductivity such as ITO.
  • the second semiconductor layer 50 and the active layer 40 are mesa-etched to form a plurality of grooves 61 exposing the first semiconductor layer 30.
  • the plurality of grooves 61 are arranged in an island form. In the present example, since the first lower electrodes 71 are evenly arranged in a plurality of islands, a plurality of grooves 61 are also formed accordingly.
  • a first lower electrode 71 is formed on the first semiconductor layer 30 exposed to the plurality of grooves 61 through a deposition method, and the like, and a current diffusion conductive film corresponding to the light absorption prevention film 41 (
  • the second lower electrode 81 is formed on the 60.
  • the order of forming the first lower electrode 71 and the second lower electrode 81 may be formed first, and the same process is performed when the first lower electrode 71 and the second lower electrode 81 are made of the same material. It may be formed at the same time by.
  • the second lower electrode 81 is formed to have a smaller width than the light absorption prevention layer 41
  • the first lower electrode 71 is formed to have a width smaller than the width of the groove 61 to be formed in the groove 61. Away from the side.
  • the lower electrodes 71 and 81 may have a multi-layered structure, and may have a structure (for example, see FIG. 68) to prevent an increase in an operating voltage by removing an etch stop layer corresponding to the openings 62 and 63.
  • a structure for example, see FIG. 68
  • the ratio of the total area of the lower electrodes 71,81 to the total area of the lower electrodes 71,81 or the planar area when viewed in plan view is preferable in terms of light absorption reduction, the lower area of the lower electrodes 71,81 When the total area or the ratio decreases, the operating voltage tends to increase. On the other hand, as the current supply becomes uniform, the luminous efficiency may be improved, thereby improving brightness.
  • the case in which the etch stop layer of the lower electrodes 71 and 81 corresponding to the openings 62 and 63 is removed to prevent the operating voltage from rising is increased. It is advantageous in terms of suppression of increase and improvement of luminance.
  • the operation voltage is higher than that of the comparative example due to the structure preventing the rise of the operating voltage even if the lower electrode is smaller than the comparative example in this example. It can not be high. Therefore, the light absorption may be further reduced without higher operating voltage, so that the brightness may be better.
  • the present example may have a lower operating voltage.
  • a nonconductive reflecting film 91 is formed on the current spreading conductive film 60.
  • the dielectric film 91b, the first distributed Bragg reflector 91a, and the clad film 91c are formed to cover the current diffusion conductive film 60 (see FIG. 76).
  • the dielectric film 91b or the clad film 91c may be omitted.
  • the first distributed Bragg reflector 91a is formed by stacking a pair of SiO 2 and TiO 2 a plurality of times, for example.
  • the first distribution Bragg reflector 91a may be formed of a combination of a high refractive index material such as Ta 2 O 5 , HfO, ZrO, SiN, and a dielectric thin film having a lower refractive index (typically SiO 2 ).
  • a high refractive index material such as Ta 2 O 5 , HfO, ZrO, SiN
  • a dielectric thin film having a lower refractive index typically SiO 2 .
  • an optimization process is considered in consideration of the incident angle and reflectance according to the wavelength based on an optical thickness of 1/4 of the wavelength of the light emitted from the active layer 40. It is desirable to pass through, and the thickness of each layer does not necessarily have to conform to 1/4 optical thickness of the wavelength.
  • the number of combinations is suitable for 4 to 40 pairs.
  • the effective refractive index of the first distributed Bragg reflector 91a is larger than that of the dielectric film 91b for the reflection and guide of light.
  • the first distributed Bragg reflector 91a is composed of SiO 2 / TiO 2
  • the refractive index of SiO 2 is 1.46 and the refractive index of TiO 2 is 2.4
  • the effective refractive index of the distributed Bragg reflector is a value between 1.46 and 2.4.
  • the dielectric film 91b may be made of SiO 2 , and the thickness thereof is appropriately 0.2um to 1.0um.
  • the first distributed Bragg reflector 91a Prior to the deposition of the first distributed Bragg reflector 91a, which requires precision, the first distributed Bragg reflector 91a can be stably manufactured and helps to reflect light by forming the dielectric film 91b having a predetermined thickness. Can give
  • the clad film 91c may be made of a metal oxide such as Al 2 O 3 , a dielectric film 91b such as SiO 2 , SiON, MgF, CaF, or the like.
  • the clad film 91c may also be formed of SiO 2 having a refractive index of 1.46 smaller than the effective refractive index of the first distributed Bragg reflector 91a.
  • the uppermost layer of the distributed Bragg reflector 91a composed of a plurality of pairs of SiO 2 / TiO 2 may be TiO 2 , considering that it can be made of an SiO 2 layer having a thickness of about ⁇ / 4n, the clad film 91c ) Is preferably thicker than [lambda] / 4n so as to be different from the top layer of the distributed Bragg reflector 91a.
  • the clad film 91c is too thick, not less than 3.0 ⁇ m, because not only a burden on the subsequent opening forming process but also an increase in thickness does not contribute to the efficiency improvement and only a material cost can be increased. Therefore, in order not to burden the subsequent process, the maximum value of the thickness of the clad film 91c may be appropriately formed within 1 ⁇ m to 3 ⁇ m. However, in some cases, it is not impossible to form more than 3.0um.
  • the first distributed Bragg reflector 91a When the first distributed Bragg reflector 91a is directly in contact with the first connecting electrodes 72 and 74 (see FIG. 79) and the second connecting electrodes 82 and 84 (see FIG. 79), the first distributed Bragg reflector 91a is used. A portion of the light traveling through the light may be absorbed by the first connection electrodes 72 and 74 and the second connection electrodes 82 and 84. Therefore, when the clad film 91c having a refractive index lower than that of the first distributed Bragg reflector 91a is introduced as described above, light absorption by the first connection electrodes 72 and 74 and the second connection electrodes 82 and 84 is achieved. Can be greatly reduced.
  • the dielectric film 91b is omitted from the viewpoint of the overall technical idea of the present disclosure, and the first distributed Bragg reflector 91a and the clad film 91c may be considered. There is no reason to exclude the configuration. Instead of the first distributed Bragg reflector 91a, a case in which a dielectric film 91b made of TiO 2 is used as a dielectric may be considered. In the case where the first distributed Bragg reflector 91a includes the SiO 2 layer on the uppermost layer, the case where the clad film 91c is omitted may also be considered.
  • the first distributed Bragg reflector 91a includes the TiO 2 layer at the top. In this case, the case where the clad film 91c is omitted may also be considered.
  • the dielectric film 91b, the first distributed Bragg reflector 91a, and the clad film 91c serve as the optical waveguides as the non-conductive reflecting film 91, and preferably have a total thickness of 1 to 8 um. .
  • a plurality of openings 62 and 63 are formed in the nonconductive reflecting film 91.
  • the opening forming process the method described in FIG. 67 may be used.
  • the layer structure described with reference to FIG. 68 may be adopted as an example of the layer structure of the lower electrodes 71 and 81.
  • embodiments without removing the etch stop layer are also possible.
  • the first connection electrodes 72 and 74 and the second connection electrodes 82 and 84 on the non-conductive reflective film 91 using, for example, sputtering equipment and E-beam equipment. ) Is deposited. Some of the plurality of openings 62 and 63 communicate with the plurality of grooves 61 exposing the first semiconductor layer 30, respectively, and the remaining openings 62 are formed on the current spreading conductive film 60. The second lower electrode 81 is exposed.
  • the first connection electrodes 72 and 74 and the second connection electrodes 82 and 84 are electrically connected to the first lower electrode 71 and the second lower electrode 81 through the plurality of openings 62 and 63, respectively. do.
  • the first connection electrodes 72 and 74 and the second connection electrodes 82 and 84 may have a multilayer structure (for example; refer to FIG. 72).
  • connection electrodes 72, 74, 82, and 84 can be variously changed.
  • the first connection electrodes 72 and 74 are formed to connect the plurality of openings 63 to connect the first lower electrodes 71 evenly disposed on the entire light emitting surface.
  • the second connection electrodes 82 and 84 are formed to connect the plurality of openings 62 to connect the second lower electrodes 81 evenly disposed on the entire light emitting surface.
  • the first connection electrodes 72 and 74 and the second connection electrodes 82 and 84 are each formed in a closed loop shape on the non-conductive reflecting film 91 to further improve current uniformity across the light emitting surface. do.
  • the closed loop shape is not limited to a complete closed loop shape, but also includes a closed loop shape in which a part is broken.
  • a closed loop outer second connection electrode 82 and an inner second connection electrode 84 are provided, and the outer first connection electrode 72 having a closed loop shape is formed between the inner and outer second connection electrodes 82 and 84.
  • the inner first connection electrode 74 is further provided inside the inner second connection electrode 84, and the center protrusion 86 protrudes from the inner second connection electrode 84 to protrude the inner first. It extends inward of the connection electrode 74.
  • the closed loop connection electrodes 72, 74, 82, and 84 connect a plurality of openings 62 and 63 to supply an equal current through each of the openings 62 and 63, and in any direction geometrically. Since they are generally uniform or symmetrical, they are very advantageous for improving the uniformity of the current supply and consequently the uniformity of the current density in the light emitting surface.
  • each of the openings 63 of the first lower electrode 71 may be connected to the first connection electrodes having the stripe shape or the finger shape, and the stripe shape may be formed between the first connection electrodes.
  • An embodiment in which the second lower electrodes 81 side openings 62 are connected by disposing second connection electrodes having a finger shape is also possible.
  • the shapes of the first connection electrode and the second connection electrode may be variously changed.
  • an insulating film 95 or an additional reflective film is formed over the non-conductive reflective film 91 as a neutral film.
  • the insulating layer 95 is formed to cover the first connection electrodes 72 and 74 and the second connection electrodes 82 and 84.
  • the insulating film 95 may be made of a single insulating layer (eg SiO 2, SiN, TiO 2 , Al 2 O 3 , Su-8, etc.)
  • the second distributed Bragg reflector 95a eg: 74
  • the second distributed Bragg reflector may have a thickness smaller than that of the first distributed Bragg reflector.
  • the insulating film 95 may also include a lower dielectric film / second distributed Bragg reflector / upper dielectric film.
  • the amount of light absorbed by the upper electrodes 75 and 85 may be reduced by making the refractive index of the upper dielectric film smaller than that of the second distributed Bragg reflector.
  • openings 64 and 65 are formed in the insulating film 95.
  • the openings 64 and 65 are suitable for electrically connecting the first upper electrode 75 and the second upper electrode 85 to the first connecting electrodes 72 and 74 and the second connecting electrodes 82 and 84, respectively.
  • the openings 64 and 65 formed at the position and formed in the insulating film 95 may overlap the openings 64 and 65 formed in the non-conductive reflecting film 91, but are generally formed so as not to overlap.
  • the first upper electrode 75 and the second upper electrode 85 may be deposited on the insulating layer 95 using sputtering equipment, E-beam equipment, or the like.
  • the first upper electrode 75 and the second upper electrode 85 are disposed to face each other. Some light passing through the insulating layer 95 is reflected by the first upper electrode 75 and the second upper electrode 85.
  • the first upper electrode 75 and the second upper electrode 85 are connected to the first connection electrodes 72 and 74 and the second connection electrodes 82 and 84 through the openings 64 and 65, respectively.
  • the first upper electrode 75 and the second upper electrode 85 may be electrically connected to an electrode provided outside (package, COB, submount, etc.) by a stud bump, a conductive paste, or a eutectic bonding method.
  • the first upper electrode and the second upper electrode 85 may have a multilayer structure as described with reference to FIG. 76.
  • FIG. 81 is a view for explaining another example of the semiconductor light emitting device according to the present disclosure, in which the first connection electrodes 72 and 74 and the second connection electrodes 82 and 84 are completely closed loop shapes (no breaks or branches). Closed loop) is very good for improving current uniformity.
  • the closed loop closest to the center of the light emitting surface in the plan view is the first connection electrode 74, and the island-type second connection electrode 86 is disposed inside the first connection electrode 74 having a closed loop shape.
  • the protrusion 85a extends from the second upper electrode 85 and is electrically connected to the island-type second connection electrode 86 through the opening 64. Therefore, the hole is sufficiently supplied even in the center, and as a result, the uniformity is further improved.
  • the projection 85a can be used as a marker for identifying the n-side and p-side as in the notch 85a in FIG. 80.
  • FIG. 82 is a view for explaining still another example of the semiconductor light emitting device according to the present embodiment.
  • an opening 62a is formed in the substantially center of the light emitting surface to lead to the second lower electrode.
  • a plurality of openings 62b are formed around 62a) to communicate with other second lower electrodes.
  • the closed loop closest to the center of the light emitting surface on the plan view is the second connection electrode 84 and connects the plurality of openings 62a.
  • the opening 62a is connected to the second connection electrode 84 by a cross-shaped extension.
  • the opening 62a when the opening 62a is placed inside the plurality of openings 62b serving as the passages of the same polarity, light emission is further increased as compared with the case where the opening 62a is not inside.
  • the number, spacing, and arrangement of the openings 62, 63, 62a, and 62b may be appropriately adjusted for the size of the semiconductor light emitting device, the current spreading, the uniform current supply, and the uniformity of the light emission.
  • the plurality of openings 62b, 63, 62 are formed symmetrically with respect to the opening 62a. Current is supplied through the openings 62, 63, 62a, and 62b. If the current is uneven, some of the openings may bias the current, which may cause deterioration in a position where the current is biased in the long term. have.
  • the first connection electrode 72 and the second connection electrode 82 and 84 are formed in a closed loop shape, and while supplying an equal current through the connection electrode and the opening, the first connection electrode 72 and the second connection electrode 82 and 84 are geometrically symmetrical. It is very advantageous to improve the uniformity, and consequently the uniformity of the current density in the light emitting surface.
  • the opening 62a and the plurality of openings may be difficult since the opening 62a becomes a current path having a different polarity from the plurality of openings 62b, because electrical connection to the opening 62a may be difficult or another complicated design may be considered.
  • 62b all become currents of the same polarity, for example, hole supply passages.
  • the electron density of the plurality of semiconductor layers below and inside the second connection electrode 84 is determined by the second connection. It is expected to be smaller than the electron density in the plurality of semiconductor layers outside the electrode 84.
  • the first connection electrode 72, the second connection electrode 82, and the openings 62 and 63 have improved uniform current in a closed loop shape arrangement and a symmetrical arrangement.
  • an opening 62a may be provided inside the second connection electrode 84 to maintain or increase light emission.
  • an appropriate value of the area of the second connection electrode 84 or the distance between the opening 62a and the opening 62b can be found. For example, as the distance between the opening 62a and the opening 62b increases, the area of the second connection electrode 84 and the cross-shaped extension increases, and the area of which the hole density is relatively high increases.
  • the temperature difference between the positions on the light emitting surface is small.
  • Increasing the area of the second connection electrode 84 and the cross-shaped extension may be more advantageous for heat dissipation through the second upper electrode 85.
  • the extent to which holes attract electrons and emit light may be affected by the area inside the second connection electrode 84 or the distance and the number of the openings 62a and 62b.
  • the present disclosure may also be applied to a light emitting device in which an electrode is formed on a first semiconductor layer from which a substrate is removed or under a conductive substrate.
  • an embodiment in which one of the first upper electrode 75 and the second upper electrode 85 is formed on the non-conductive reflecting film and the other is formed on the insulating film 95 may be considered.
  • an embodiment in which the first upper electrode 75 is formed on the exposed first semiconductor layer by mesa etching and the second upper electrode 85 is formed on the non-conductive reflective film or the insulating film 95 may be considered.
  • FIG. 83 is a diagram illustrating an example of a semiconductor light emitting device according to the present disclosure
  • FIG. 84 is a diagram illustrating an example of a cross section taken along line AA in FIG. 83
  • FIG. 85 is a cut along line BB in FIG. 83. It is a figure which shows an example of one cross section.
  • the semiconductor light emitting device includes a substrate 10, a plurality of semiconductor layers, a light absorption prevention film 41, a current diffusion conductive film 60, a non-conductive reflecting film 91, an insulating film 95, a first electrode portion 71, 72a, 72b, 73, 77, 75 and second electrode portions 81, 82a, 82b, 83, 87, 85.
  • group III nitride semiconductor light emitting element will be described as an example.
  • Sapphire, SiC, Si, GaN and the like are mainly used as the substrate 10, and the substrate 10 may be finally removed.
  • This example may also be applied to a semiconductor light emitting device in which an electrode is formed on the first semiconductor layer 30 side or the conductive substrate 10 side from which the substrate 10 is removed when the substrate 10 is removed or has conductivity.
  • the positions of the first semiconductor layer 30 and the second semiconductor layer 50 may be changed, and are mainly made of GaN in the group III nitride semiconductor light emitting device.
  • the plurality of semiconductor layers may include a buffer layer 20 formed on the substrate 10, a first semiconductor layer 30 having a first conductivity (for example, Si-doped GaN), and a second semiconductor layer having a second conductivity different from the first conductivity. (Eg, Mg-doped GaN) and an active layer 40 interposed between the first semiconductor layer 30 and the second semiconductor layer 50 to generate light through recombination of electrons and holes (eg, InGaN / ( In) GaN multi-quantum well structure).
  • Each of the semiconductor layers 30, 40, and 50 may be formed in multiple layers, and the buffer layer 20 may be omitted.
  • the light absorption prevention layer 41 is formed on the second semiconductor layer 50 to correspond to the opening 62, and the light absorption prevention layer 41 has only a function of reflecting some or all of the light generated in the active layer 40. It may have a function of preventing a current from flowing directly below the second lower electrode 81 from the second lower electrode 81, or may have both functions.
  • the current spreading conductive film 60 is provided.
  • the current spreading conductive film 60 is formed between the light absorption preventing film 41 and the second lower electrode 81, and may be formed to transmit light and cover the entire second semiconductor layer 50. May be In particular, in the case of p-type GaN, the current spreading ability is poor, and in the case where the p-type semiconductor layer 50 is made of GaN, most of the current diffusion conductive film 60 should be assisted.
  • materials such as ITO and Ni / Au may be used as the current spreading conductive film 60.
  • the nonconductive reflecting film 91 is formed on the plurality of semiconductor layers to reflect light from the active layer 40 to the plurality of semiconductor layers 30, 40, 50.
  • the non-conductive reflective film 91 is preferably made of a non-conductive material to reduce light absorption by the metal reflective film, for example, a transparent dielectric such as SiO x , TiO x , Ta 2 O 5 , MgF 2. It can be composed of materials.
  • the nonconductive reflecting film 91 may be made of a single dielectric layer or may have a multilayer structure.
  • the non-conductive reflecting film 91 is made of SiO x , since the non-conductive reflecting film 91 has a lower refractive index than the p-type semiconductor layer 50 (eg, GaN), the light having a critical angle or more may be partially reflected toward the semiconductor layers 30, 40, and 50. It becomes possible.
  • the nonconductive reflecting film 91 includes a dielectric film 91b, a first distributed Bragg reflector 91a and a clad film 91c sequentially stacked. In the case of a multi-layer structure including a DBR, it is possible to reflect a greater amount of light toward the semiconductor layers 30, 40, and 50. Openings 62 and 63 are formed in the non-conductive reflecting film. The openings 62 and 63 include the case of opening to the side as well as the upper side of the semiconductor light emitting device. The nonconductive reflecting film 91 is further described later.
  • the insulating film 95 is formed on the non-conductive reflective film, and may be formed of a single layer (for example, SiO 2 ) or multiple layers.
  • the insulating film can function as an additional reflecting film.
  • Openings 64 and 65 are formed in the insulating film 95.
  • the openings 64 and 65 include the case of opening to the side as well as the upper side of the semiconductor light emitting device.
  • At least one of the non-conductive reflecting film 91 and the insulating film 95 includes a distributed Bragg reflector so as to reduce light absorption by not using a metal reflecting film and to increase light reflectance toward the plurality of semiconductor layers. desirable.
  • the first electrode portions 71, 72a, 72b, 73, 77, and 75 are in electrical communication with the first semiconductor layer 30 and supply one of electrons and holes
  • the second electrode portions 81, 82a, 82b, 83, 87, and 85 are in electrical communication with the second semiconductor layer 50 and supply the other of electrons and holes.
  • At least one of the first electrode portions 71, 72a, 72b, 73, 77, 75 and the second electrode portions 81, 82a, 82b, 83, 87, 85 may be formed on the upper electrode 75 formed on the insulating layer 95.
  • island type connection electrodes 72a and 82a formed between the non-conductive reflecting film 91 under the upper electrodes 75 and 85 and the insulating film 95, and the non-conductive below the upper electrodes 75 and 85.
  • the extension type connection electrodes 72b and 82b extending out of the upper electrodes 75 and 85, and the upper electrodes 75 and 85 passing through the insulating layer 95.
  • the island connection electrodes 72a and 82a penetrate through the plurality of upper electrical connections 77 and 87 connecting the island connection electrodes 72a and 82a and the extension connection electrodes 72b and 82b and the non-conductive reflective film 91, respectively.
  • An island type refers to a shape that does not generally extend to one side such as a polygon such as a circle, a triangle, a rectangle, or the like.
  • the present disclosure may also be applied to a light emitting device in which an electrode is formed on a first semiconductor layer from which a substrate is removed or under a conductive substrate.
  • the first electrode portions 71, 72a, 72b, 73, 77, 75 and the second electrode portions 81, 82a, 82b, 83, 87, 85 are provided with a plurality of semiconductor layers 30, 40, 50. Are all formed on the opposite side of the substrate 10.
  • the first electrode portions 71, 72a, 72b, 73, 77, and 75 may include the first upper electrode 75, the first island connection electrode 72a, the first extension connection electrode 72b, and the plurality of first electrode portions 71, 72a, 72b, 73, 77, and 75.
  • the second electrode parts 81, 82a, 82b, 83, 87, and 85 may include a second upper electrode 85, a second island connection electrode 82a, a second extension connection electrode 82b, and a plurality of upper second parts. Electrical connections 87 and a plurality of lower second electrical connections 83.
  • the first extended connection electrode 72b extends below the second upper electrode 85, and the second extended connection electrode 82b extends below the first upper electrode 75.
  • the island connection electrodes 72a and 82a are located on opposite sides of the direction in which the extension connection electrodes 72b and 82b extend out of the upper electrodes 75 and 85. It is desirable to.
  • the first electrode portions 71, 72a, 72b, 73, 77, 75 and the second electrode portions 81, 82a, 82b, 83, 87, 85 are provided with a plurality of semiconductor layers and lower electrical connections 73. And lower electrodes 71 and 81 interposed therebetween to reduce electrical contact resistance and to achieve stable electrical contact.
  • the lower electrodes 71 and 81 do not extend long to reduce light absorption by the metal, and have an island shape corresponding to the openings 62 and 63. At least a portion of the first lower electrode 71 is exposed by the opening 63 formed in the non-conductive reflective film 91, and contacts the exposed first semiconductor layer 30 by etching.
  • the lower electrode 81 is at least partially exposed by the opening 62 formed in the nonconductive reflecting film 91 and contacts the current spreading conductive film 60.
  • the plurality of lower first electrical connections 73 penetrate through the opening 63 and connect the first island connection electrode 72a and the first extension connection electrode 72b to the plurality of first lower electrodes 71, respectively.
  • the plurality of lower second electrical connections 83 penetrate through the opening 62 and connect the second island type connecting electrode 82a and the second extension type connecting electrode 82b to the plurality of second lower electrodes 81, respectively. .
  • the insulating film 95 described above is formed on the non-conductive reflective film 91 so as to cover the connection electrodes 72a, 72b, 82a, and 82b.
  • Various means for supplying electrons or holes to the connecting electrodes 72a, 72b, 82a, and 82b may be considered.
  • the first electrode portions 71, 72a, 72b, 73, 77, 75 and the second electrode portions 81, 82a, 82b, 83, 87, 85 are respectively disposed on the upper electrode 75, on the insulating film 95. 85).
  • the upper electrodes 75 and 85 may be electrically connected to the external electrodes by a method such as eutectic bonding, soldering, wire bonding, or the like.
  • the upper electrodes 75 and 85 may include contact layers (eg, Cr, Ti, etc.) / Reflective layers (eg, Al, Ag, etc.), diffusion barrier layers (eg, Ni, etc.), and bonding layers (eg, Au / Sn). Alloys, Au / Sn / Cu alloys, Sn, heat-treated Sn, etc.).
  • the connecting electrodes 72a, 72b, 82a, and 82b can be designed more freely in shape or distribution on the non-conductive reflecting film 91, so that a plurality of islands
  • the first lower electrode 71 and the second lower electrode 81 formed in a shape also do not particularly limit the position, and the first lower electrode 71 and the second lower electrode 81 are formed on the entire emission surface.
  • Both of the first upper electrode 75 and the second lower electrode 81 may be formed.
  • the first lower electrode 71 and the second lower electrode 81 may have a plurality of island shapes in which a light emitting surface (a plurality of semiconductor layers 30, 40, and 50 are viewed in a top view).
  • connection electrodes 72a, 72b, 82a, and 82b are also metal films, the area or length of the metal film is reduced to reduce light absorption, and the extension connection with the island connection electrodes 72a and 82a is provided to facilitate current diffusion.
  • the electrodes 72b and 82b are used in combination.
  • the island-type connecting electrodes 72a and 82a are disposed below each upper electrode 75 and 85, and the lower electrode 71 is directly directed downward through the upper electrical connection 77 and 87 and the lower electrical connection 73 and 83.
  • the extended connection electrodes 72b and 82b extend below the lower electrodes 75 and 85 of different polarities as described above, and then the lower connection through the lower electrical connections 73 and 83. It is in electrical communication with the electrodes 71 and 81. In order to improve current spreading, the number and distribution of the lower electrodes 71 and 81 may be changed.
  • connection electrodes 72a, 72b, 82a, and 82b on the nonconductive reflective film 91 the first semiconductor layer 30 exposed by mesa etching the second semiconductor layer 50 and the active layer 40 is exposed. Even if the n-side branch electrode is formed long on the p-side branch electrode or the p-side branch electrode is not formed on the current diffusion conductive film, the island type first lower electrode 71 and the second lower electrode 81 can be evenly distributed. While achieving uniformity, the structure is more advantageous for reducing light absorption by the metal. In addition, by making the length and area of the connecting electrode as economical as possible, it is possible to suppress the unnecessary increase of the metal film and consequently contribute to the improvement of the brightness.
  • a height difference occurs due to the same structure as the lower electrodes 71 and 81. Therefore, prior to the deposition of the distributed Bragg reflector 91a, which requires precision, the dielectric film 91b having a predetermined thickness is formed, whereby the distributed Bragg reflector 91a can be stably manufactured, and also helps to reflect light. Can give
  • the material of the dielectric film 91b is suitably SiO 2 , and the thickness thereof is preferably 0.2 ⁇ m to 1.0 ⁇ m. If the thickness of the dielectric film 91b is too thin, it may be insufficient to cover the lower electrodes 71 and 81 having a height of about 2 ⁇ m to 3 ⁇ m. If the thickness of the dielectric film 91 b is too thick, the subsequent openings 62 and 63 may be formed. It can be a burden. The thickness of the dielectric film 91b may then be thicker than the thickness of the subsequent distribution Bragg reflector 91a. In addition, it is necessary to form the dielectric film 91b in a manner more suitable for securing device reliability.
  • the dielectric film 91b made of SiO 2 is preferably formed by Chemical Vapor Deposition (CVD), and particularly, Plasma Enhanced CVD (PECVD).
  • CVD Chemical Vapor Deposition
  • PECVD Plasma Enhanced CVD
  • the chemical vapor deposition method is advantageous compared to physical vapor deposition (PVD), such as E-Beam Evaporation.
  • PVD physical vapor deposition
  • the dielectric film 91b is preferably formed by chemical vapor deposition to reduce the height difference and ensure reliable insulation. Therefore, it is possible to secure the function as a reflective film while ensuring the reliability of the semiconductor light emitting element.
  • the distributed Bragg reflector 91a is formed on the dielectric film 91b.
  • the Distribution Bragg reflector 91a may be a physical vapor deposition (PVD), and among them, an electron beam deposition (E-Beam Evaporation) method. Or by sputtering or thermal evaporation.
  • the distribution Bragg reflector 91a is preferably formed of a light transmitting material (eg, SiO 2 / TiO 2 ) to prevent light absorption.
  • the dielectric film 91b may be formed of a dielectric (eg, SiO 2 ) having a refractive index smaller than the effective refractive index of the distribution Bragg reflector 91a.
  • the effective refractive index refers to the equivalent refractive index of light that can travel in a waveguide made of materials having different refractive indices.
  • the clad film 91c may also be made of a material (eg, Al 2 O 3, SiO 2, SiON, MgF, CaF) that is lower than the effective refractive index of the distribution Bragg reflector 91a.
  • a material eg, Al 2 O 3, SiO 2, SiON, MgF, CaF.
  • the optical waveguide is a structure that guides the light by using total reflection by surrounding the light propagation part with a material having a lower refractive index. From this point of view, when the distributed Bragg reflector 91a is viewed as the propagation section, the dielectric film 91b and the clad film 91c surround the propagation section and can be viewed as part of the optical waveguide.
  • 86, 87, and 88 are views illustrating an example of a method of forming an opening and a lower electrode in the semiconductor light emitting device according to the present disclosure, and are described with reference to the second electrode part, and the same process may be performed with the first electrode part. Can be.
  • FIG. 86 is a view for explaining an example of the opening forming process
  • FIG. 87 is a view for explaining an example of the planar distribution of the lower electrode and the opening
  • a non-conductive reflecting film 91 is formed on the current diffusion conductive film.
  • etching eg, plasma etching
  • openings 62 and 63 are formed, as shown in FIG. 87.
  • the opening 62 corresponds to the second lower electrode 81
  • the opening 63 communicates with the mesa etching groove 61 formed in the plurality of semiconductor layers
  • the first lower electrode 71 is formed in the mesa etching groove 61.
  • the openings 62 and 63 do not exclude the form of opening to the side as well as to the upper side of the semiconductor light emitting device.
  • the opening 62 is gradually formed as shown in FIG. 86A, and as shown in FIG. 86B, a portion of the upper surface of the second lower electrode 81 is exposed.
  • FIG. 86B the height difference between the upper rim 91r1 of the opening 62 and the top surface of the non-conductive reflecting film 91 is reduced in FIG. 86B.
  • FIG. 86C the periphery of the second lower electrode 81 is exposed by the opening 62, and the inclined surface is formed on the non-conductive reflective film 91 due to the opening 62.
  • the second lower electrode 81 is exposed by the opening 62.
  • the width of the opening 62 may be selected to expose the periphery of the second lower electrode 81 as illustrated in FIG. 86D, or may be selected to expose only a portion of the second lower electrode 81 as illustrated in FIG. 86B.
  • the peripheral portion of the opening 62 is exposed and the second connection electrode 82 surrounds the second lower electrode 81 as shown in FIG. 86D, that is, the upper connection and side surfaces of the second lower electrode 81 are in contact with each other.
  • the stability of can be further improved.
  • the heat treatment may further strengthen and stabilize the connection between the second lower electrode 81 and the second connection electrode 82.
  • the exposed surface of the non-conductive reflecting film 91 is etched to form the upper rim of the opening 62.
  • the difference in height between the upper rim 91r2 in FIG. 86D is smaller than that of the upper rim 91r1 in FIG. 86B. (Particularly, a nonconductive reflecting film forming step) has a further advantage.
  • FIG. 88 is a view for explaining an example of the layer structure of the second lower electrode 81 and is an enlarged view of a part of the opening 62 formed by the dry etching process.
  • a halogen gas containing an F group eg, CF 4 , C 2 F 6 , C 3 F 8 , SF 6, etc.
  • the second lower electrode 81 may include a plurality of layers.
  • the second lower electrode 81 may include the contact layer 81a, the reflective layer 81b, the diffusion barrier 81c, the antioxidant layer 81d, and the etch stop layer 81e which are sequentially formed on the current diffusion conductive film 60; Protective layer).
  • the reflective layer 81b may be omitted.
  • a reflective layer / diffusion prevention layer is formed a plurality of times (for example, Al / Ni / Al / Ni / Al / Ni) in order to prevent the reflective layer from bursting or protruding.
  • each reflective layer is not formed too thick and the diffusion barrier layer also functions to prevent bursting can be considered.
  • the first lower electrode 71 may also have the same or similar layer structure as the second lower electrode 81.
  • the contact layer 81a is preferably made of a material which makes good electrical contact with the current spreading conductive film 60 (eg, ITO). Materials such as Cr and Ti are mainly used as the contact layer 81a, and Ni and TiW may also be used, and Al and Ag having good reflectance may be used.
  • the reflective layer 81b may be made of a metal having good reflectance (eg, Ag, Al, or a combination thereof). The reflective layer 81b reflects the light generated by the active layer 40 toward the plurality of semiconductor layers 30, 40, and 50. The reflective layer 81b may be omitted.
  • the diffusion barrier layer 81c prevents the material of the reflective layer 81b or the material of the antioxidant layer 81d from diffusing into another layer.
  • the diffusion barrier layer 81c may be formed of at least one selected from Ti, Ni, Cr, W, TiW, and the like, and when a high reflectance is required, Al, Ag, or the like may be used.
  • the antioxidant layer 81d may be made of Au, Pt, or the like, and may be any material as long as it is exposed to the outside and does not oxidize well in contact with oxygen. As the antioxidant layer 81d, Au having good electrical conductivity is mainly used.
  • the etch stop layer 81e is a layer exposed in the dry etching process for forming the opening 62. In this example, the etch stop layer 81e is the uppermost layer of the second lower electrode 81.
  • the etch stop layer 81e When Au is used as the etch stop layer 81e, not only the bonding strength with the non-conductive reflecting film 91 is weak, but a portion of Au may be damaged or damaged during etching. Therefore, when the etch stop layer 81e is made of a material such as Ni, W, TiW, Cr, Pd, Mo, or the like instead of Au, the bonding strength with the non-conductive reflecting film 91 may be maintained, thereby improving reliability.
  • the contact layer 81a may have a thickness of 5A to 500A
  • the reflective layer 81b may have a thickness of about 500A to 10000A
  • the diffusion barrier layer 81c may have a thickness of about 100A to 5000A
  • the anti-oxidation layer 81d may have a thickness of about 100A to 5000A
  • the etch stop layer 81e may have a thickness of about 10A to 1000A.
  • the lower electrode of the multilayer structure may be partially omitted or a new layer may be added as necessary.
  • the etch stop layer 81e protects the second lower electrode 81 and, in particular, prevents damage to the antioxidant layer 81d.
  • the same process may be performed on the first lower electrode 71.
  • a halogen gas containing an F group eg, CF 4 , C 2 F 6 , C 3 F 8 , SF 6
  • the etch stop layer 81e is preferably made of a material having excellent etching selectivity in such a dry etching process.
  • the antioxidant layer 81d may be damaged or damaged in the dry etching process. Therefore, Cr or Ni is suitable as a material of the etch stop layer 81e in view of the etching selectivity. Ni or Cr does not react with or slightly reacts with the etching gas of the dry etching process, and does not etch to serve to protect the second lower electrode 81.
  • a material such as an insulating material or an impurity may be formed on the upper layer of the second lower electrode 81 due to the etching gas.
  • a material may be formed by reacting the halogen etching gas including the F group with the upper metal of the electrode.
  • the halogen etching gas including the F group For example, at least a portion of Ni, W, TiW, Cr, Pd, Mo, and the like as a material of the etch stop layer 81e may react with an etching gas of a dry etching process to form a material (for example, NiF).
  • the material formed as described above may cause a decrease in electrical characteristics (eg, an increase in operating voltage) of the semiconductor light emitting device.
  • Ni, W, TiW, Cr, Pd, Mo, etc. do not react with the etching gas to form a material or form a very small amount of material. It is preferable to suppress material generation or to form a small amount, and Cr is more suitable as a material of the etch stop layer 81e than Ni in this respect.
  • the upper layer of the second lower electrode 81 that is, the portion corresponding to the opening 62 of the etch stop layer 81e is removed by a wet etching process (second etching process) in consideration of the formation of a material.
  • second etching process the antioxidant layer 81d corresponding to the opening 62 is exposed.
  • the material is etched and removed together with the etch stop layer 81e. As such, the material is removed to improve the electrical contact between the second lower electrode 81 and the second connection electrode 82, thereby preventing the electrical characteristics of the semiconductor light emitting device from being lowered.
  • the same process or configuration may be applied to the first lower electrode 71 and the opening 63, of course.
  • the first etching process may be performed by wet etching to form the opening 62.
  • the non-etching liquid of the conductive reflective film 91 such as HF, BOE, NHO 3, HCl may be used alone or in combination in an appropriate concentration.
  • the etching selectivity of the etching prevention layer 81e is excellent for protecting the antioxidant layer 81d.
  • Cr is suitable as a material of the etch stop layer 81e.
  • the etch stop layer 81e corresponding to the opening 62 may be removed by a subsequent wet etching process (second etching process).
  • the non-conductive reflecting film 91 is formed by using a metal such as Al and Ag having high reflectance on the non-conductive reflecting film 91 using, for example, sputtering equipment, E-beam equipment, or the like.
  • the second connection electrode 82 is deposited thereon, and the lower second electrical connection 83 is formed by filling the opening 62.
  • the first connection electrode 71 and the lower first electrical connection 73 can be formed.
  • the first connection electrode 72 and the second connection electrode 82 may include a contact layer and a reflective layer.
  • the first connection electrode 72 and the second connection electrode 82 may have stable electrical contact with the first lower electrode 71 and the second lower electrode 81.
  • the contact layer may be formed using Cr, Ti, Ni, or an alloy thereof, and the reflective layer may be formed on the contact layer using a reflective metal layer such as Al or Ag.
  • the openings 63 communicate with the grooves 61 exposing the first semiconductor layer 30, respectively, and the remaining openings 62 expose the second lower electrodes 81 formed on the current spreading conductive film 60. do.
  • the first connection electrode 72 and the second connection electrode 82 are electrically connected to the first lower electrode 71 and the second lower electrode 81 through the openings 62 and 63, respectively.
  • the connecting electrode extends or fills the opening to form a lower electrical connection
  • the lower electrical connection is formed through the openings 62 and 63, and the connecting electrode may be formed to cover the lower electrical connection separately.
  • the etching process for reducing the height difference of the openings described above can also be applied to the formation of openings in the insulating film.
  • a material that inhibits electrical contact between the lower electrodes 71 and 81 and the lower electrical connection is removed, thereby preventing deterioration of electrical characteristics of the semiconductor light emitting device.
  • a semiconductor light emitting device including lower electrodes 71 and 81 having good bonding force with the non-conductive reflecting film 91 and making good electrical contact with the lower electrical connection can be manufactured.
  • FIG. 89 is a view for explaining another example of the semiconductor light emitting device according to the present disclosure.
  • a height difference may occur between a portion with and without the extended connection electrodes 72b and 82b.
  • the island-type connection electrodes 72a and 82a may reduce the height difference over the entire upper rim by a process of reducing the height difference between the upper rims of the openings 64 and 65 (eg, FIG. 86).
  • the openings 64 and 65 leading to the extension connection electrodes 72b and 82b have longer elongation connection electrodes 72b and 82b.
  • FIG. 90 is a view illustrating an example in which the upper electrodes 75 and 85 are patterned in FIG.
  • FIG. 91 is a view for explaining another example of the semiconductor light emitting device according to the present disclosure.
  • the semiconductor light emitting device includes a substrate 10, a plurality of semiconductor layers 30, 40, and 50 and a light absorption prevention film 41.
  • the nonconductive reflecting film 91 reflects light from the active layer 40 toward the plurality of semiconductor layers 30, 40, and 50.
  • the nonconductive reflecting film 91 may be made of a single dielectric layer or may have a multilayer structure.
  • the insulating film 95 is formed in a multi-layer structure so as to function sufficiently as an additional reflecting film.
  • the additional reflecting film 95 is formed on the non-conductive reflecting film 91 so as to reflect the light transmitted through the non-conductive reflecting film 91 toward the first semiconductor layer 30, and connects the connecting electrodes 72a, 72b, 82a, and 82b. Cover. Although the light generated from the active layer 40 is reflected by the non-conductive reflective film 91 to the plurality of semiconductor layers 30, 40, and 50, some of the light may pass through or leak from the non-conductive reflective film 91. .
  • the additional reflecting film 95 reflects the light transmitted through the non-conductive reflecting film 91 to the plurality of semiconductor layers 30, 40, and 50, thereby reducing light loss and improving luminance of the semiconductor light emitting device.
  • FIG. 92 is a view for explaining an example of a portion where a light is likely to be transmitted from a nonconductive reflecting film, and the nonconductive reflecting film is due to structures (eg, electrodes 700, 800, step, etc.) under the nonconductive reflecting film 900.
  • the nonconductive reflecting film 900 may include a distributed Bragg reflector.
  • the distribution Bragg reflector may consist of multiple layers of material, and each material layer must be well formed to a specially designed thickness in order to function as a reflective film.
  • the non-conductive reflecting film 900 does not reflect all the incident light, but may be partially transmitted. In particular, as illustrated in FIG.
  • each material layer of the non-conductive reflecting film 900 is hard to be formed to a designed thickness (in dotted lines). ), And the reflection efficiency is deteriorated in this region so that the light L11 and L12 can be transmitted.
  • the additional reflective film 95 may be formed of a non-metal or a non-conductive material to reduce light absorption, and may be formed of a single dielectric film, but may have a multilayer structure to increase reflectance. It is good.
  • the additional reflective film 95 may include a distribution Bragg reflector 95a.
  • the additional reflecting film 95 includes a lower dielectric film 95b between the distributed Bragg reflector 95a and the non-conductive reflecting film 91 and an upper dielectric film between the distributed Bragg reflector 95a and the upper electrodes 75 and 85. It may include at least one of (95c).
  • the lower dielectric layer 95b may cover the connection electrodes 72a, 72b, 82a, and 82b to alleviate the height difference.
  • the distribution Bragg reflector 95a may have a structure similar to that of the Distribution Bragg reflector 91a described in FIGS. 84 and 85.
  • the distributed Bragg reflector 95a may be formed by repeated stacking of SiO 2 / TiO 2 , SiO 2 / Ta 2 O 2 , or SiO 2 / HfO, and SiO 2 / TiO 2 has good reflection efficiency for blue light. For UV light, SiO 2 / Ta 2 O 2 , or SiO 2 / HfO will have good reflection efficiency.
  • the lower dielectric film 95b and the upper dielectric film 95c may be formed of a material having a refractive index smaller than that of the distribution Bragg reflector 95a so that the additional reflective film 95 may have an optical waveguide structure.
  • the lower dielectric film 95b is in contact with the connection electrodes 72a, 72b, 82a, and 82b, the lower dielectric film 95b is preferably selected from a material having a good bonding strength with the connection electrodes 72a, 72b, 82a, and 82b.
  • 95c) is preferably selected as a material having good bonding strength with the upper electrodes 75,85.
  • the additional reflecting film 95 includes a metal film.
  • the metal reflective film 95a may be formed of a metal having good reflectance (for example, Al and Ag), but may be formed to avoid portions where the openings 64 and 65 are to be formed.
  • the metal reflective film 95a may be electrically insulated by the lower dielectric film 95b and the upper dielectric film 95c.
  • the additional reflective film 95 is partially formed, for example, only in a specific region (for example, a step or a region having a high height difference) of the non-conductive reflective film 91 is possible.
  • the first upper electrode 75 and the second upper electrode 85 are disposed to face each other on the additional reflective film 95, and are respectively connected to the first connection electrode through the openings 64 and 65 formed in the additional reflective film 95.
  • 72 is electrically connected to the second connection electrode 82. Electrons are supplied to the first semiconductor layer 30 through the first upper electrode 75, the connection electrodes 72a and 72b, and the first lower electrode 71, and the second upper electrode 85 and the connection electrode 82a. Holes are supplied to the second semiconductor layer 50 through the second lower electrode 81.
  • the first upper electrode 75 and the second upper electrode 85 may be eutectic bonding electrodes or soldering electrodes.
  • a heat dissipation pad 92 may be provided above the additional reflecting film 95 and spaced apart from the upper electrodes 75 and 85.
  • the non-conductive reflecting film 91 In the semiconductor light emitting device, light absorption is reduced by using the non-conductive reflecting film 91 instead of the metal reflecting film.
  • the plurality of semiconductor layers may be formed by the connection electrodes 72a, 72b, 82a, 82b and the lower electrodes 71, 81 having a plurality of openings 62, 63 formed to be evenly mixed with the non-conductive reflecting film 91.
  • even light transmitted through the non-conductive reflecting film 91 is reflected by the additional reflecting film 95 to contribute to the improvement of the brightness.
  • the semiconductor light emitting device includes a substrate 10, a plurality of semiconductor layers 30, 40, and 50, a light absorption prevention film 41, and a current diffusion.
  • the nonconductive reflecting film 91 includes a dielectric film 91b, a first distributed Bragg reflector 91a, and a clad film 91c.
  • the additional reflecting film 95 includes a dielectric film 95b, a second distributed Bragg reflector 95a, and a clad film 95c.
  • connection electrodes 72a, 72b, 82a, and 82b and the lower electrodes 71 and 81 are in contact with each other through the openings 62 and 63 formed in the non-conductive reflecting film 91.
  • the lower electrodes 71 and 81 may have a multilayer structure (eg, see FIG. 88), and the etch stop layer corresponding to the openings 62 and 63 is removed.
  • the upper electrodes 75, 85 contact the connecting electrodes 72a, 72b, 82a, 82b through the openings 64, 65 formed in the additional reflecting film 95.
  • the non-conductive reflecting film 91 may have the configuration of the non-conductive reflecting film 91 described, for example, in FIGS. 84 and 85, and the additional reflecting film 95 may be, for example, further described in FIG. 91. It may have a configuration of a reflective film.
  • the first extended connection electrode 72b and the second extended connection electrode 82b may have a stripe shape alternately disposed. Alternatively, it may have a pinched finger shape. As another example, at least one of the first extended connection electrode 72b and the second extended connection electrode 82b may have a closed loop shape.
  • the upper electrodes 75 and 85 are electrically connected to electrodes provided outside (package, COB, submount, etc.) by a method such as stud bump, conductive paste, eutectic bonding, soldering, and wire bonding. At least one of the upper electrodes 75 and 85 may have a multilayer structure. In this example, the first upper electrode 75 and the second upper electrode 85 each have a multilayer.
  • the uppermost portions 85a and 85b of the upper electrodes 75 and 85 may be formed of a eutectic bonding material such as Au / Sn alloy or Au / Sn / Cu alloy.
  • the first upper electrode 75 and the second upper electrode 85 may be electrically connected to the outside by soldering.
  • the first upper electrode 75 and the second upper electrode 85 may be provided with reflective layers 75c and 85c, diffusion diffusion layers 75b and 85b, and soldering layers 75a and 85a.
  • the reflective layers 75c and 85c may be made of Ag, Al, or the like, and contact layers (eg, Ti and Cr) may be added below the reflective layers 75c and 85c.
  • the diffusion barrier layers 75b and 85b are made of at least one selected from Ni, Ti, Cr, W, and TiW, and prevent the solder material from penetrating into the plurality of semiconductor layers.
  • soldering layers 75a and 85a may be made of Au, or may be made of Sn (soldering layer) / Au (antioxidation layer), may be made of Sn alone without Au, or may be heat-treated Sn soldering layers 75a and 85a. ) Can be achieved. Lead free solder may be used as the solder.
  • the upper electrodes 75 and 85 include the first layers 75c and 85c and the second layers 75b and 85b.
  • the first layers 75c and 85c may be formed of a stress relaxation layer or a crack prevention layer to prevent cracks when the semiconductor light emitting device is fixed to the external electrode, and the second layers 75b and 85b may be formed of a first layer. It may be formed as a burst prevention layer that prevents the layers 75c and 85c from bursting.
  • first layers 75c and 85c may be formed of a reflective layer that is made of Al and Ag to reflect light passing through the additional reflective film 91.
  • the second layers 75b and 85b are formed of a material such as Ti, Ni, Cr, W, TiW, and formed of a barrier layer to prevent the solder material from penetrating into the semiconductor light emitting device during bonding such as soldering. Can be.
  • the first layers 75c and 85c and the second layers 75b and 85b can be formed with various combinations of these functions.
  • a contact layer (not shown) may be further provided under the first layers 75c and 85c with a metal such as Cr, Ti, Ni, or the like to improve the bonding force with the additional reflective film.
  • the upper electrodes 75, 85 have top layers 75a, 85a.
  • the top layers 75a and 85a are generally made of a metal having good adhesion, excellent electrical conductivity, and strong oxidation resistance.
  • it may consist of Au, Sn, AuSn, Ag, Pt and their alloys or combinations thereof (e.g. Au / Sn, Au / AuSn, Sn, heat-treated Sn), especially as long as these conditions are met. It is not limited.
  • FIG. 94 is a view illustrating another example of a semiconductor light emitting device according to the present disclosure.
  • lower electrical connections 73 and 83 corresponding to connection electrodes 72a, 72b, 82a, and 82b and upper electrical connections ( 77,87 are not arranged on the same line in the vertical direction, but are formed at different positions.
  • FIG. 95 is a view illustrating still another example of the semiconductor light emitting device according to the present disclosure, in which the semiconductor light emitting device has a rectangular shape elongated to one side in plan view.
  • the first upper electrode 75 (for example, the n-side upper electrode) has a suitable area for bonding but has a smaller area than the second upper electrode 85, and the second upper electrode 85 (for example, p) for current diffusion.
  • the side upper electrode has a larger area and extends around the first upper electrode 75.
  • the first extended connection electrode 72b extends under the first upper electrode 75 below the second upper electrode 85 so that the electron supply is not biased only below the first upper electrode 75.
  • a configuration may be considered in which at least one of the n-side and the p-side has the extended connection electrode 72b. It is also possible that the extended connection electrode 72b is omitted.
  • FIG. 96 is a view illustrating an example of a lower electrode in a semiconductor light emitting device according to the present disclosure. Referring to FIG. 96 and FIG. 96, a method of manufacturing a semiconductor light emitting device will be described.
  • a plurality of semiconductor layers 30, 40, and 50 are grown on a substrate 10.
  • a buffer layer eg, AlN or GaN buffer layer
  • an undoped semiconductor layer eg, un-doped GaN
  • a first conductive material are formed on the substrate 10 (eg, Al 2 O 3 , Si, SiC).
  • 1 semiconductor layer 30 eg Si-doped GaN
  • active layer 40 that generates light through recombination of electrons and holes (InGaN / (In) GaN multi-quantum well structure)
  • the second semiconductor layer 50 eg, Mg-doped GaN is grown.
  • the buffer layer 20 may be omitted, and each of the plurality of semiconductor layers 30, 40, and 50 may be formed in multiple layers (see FIG. 84).
  • the first semiconductor layer 30 and the second semiconductor layer 50 may be formed with opposite conductivity, but are not preferable in the case of a group III nitride semiconductor light emitting device.
  • a light absorption prevention film 41 is formed on the second semiconductor layer 50 by using SiO 2 , TiO 2, or the like.
  • the light absorption prevention layer 41 may be formed to be slightly wider than the second lower electrode 81 at a position corresponding to the second lower electrode 81 to be formed later.
  • the light absorption prevention layer 41 is preferably evenly distributed throughout the light emitting surface, and the second lower electrode 81 emits semiconductor light in consideration of the fact that p-GaN (eg, Mg-doped GaN) has a relatively poor current spreading. Since the light is distributed from the edge of the device to the inside, a light absorption prevention film 41 may be formed accordingly.
  • the light absorption prevention film 41 is formed in a plurality of island shapes.
  • a current spreading conductive layer 60 is formed on the second semiconductor layer 50 to cover the light absorption prevention layer 41 by using a light-transmitting material having good conductivity such as ITO.
  • the second semiconductor layer 50 and the active layer 40 are mesa-etched to form a plurality of grooves 61 exposing the first semiconductor layer 30.
  • the plurality of grooves 61 are arranged in an island form. In the present example, since the first lower electrodes 71 are evenly arranged in a plurality of islands, a plurality of grooves 61 are also formed accordingly.
  • a first lower electrode 71 is formed on the first semiconductor layer 30 exposed to the plurality of grooves 61 through a deposition method, and the like, and a current diffusion conductive film corresponding to the light absorption prevention film 41 (
  • the second lower electrode 81 is formed on the 60.
  • the order of forming the first lower electrode 71 and the second lower electrode 81 may be formed first, and the same process is performed when the first lower electrode 71 and the second lower electrode 81 are made of the same material. It may be formed at the same time by.
  • the second lower electrode 81 is formed to have a smaller width than the light absorption prevention layer 41
  • the first lower electrode 71 is formed to have a width smaller than the width of the groove 61 to be formed in the groove 61. Away from the side.
  • the lower electrodes 71 and 81 may have a multi-layered structure, and may have a structure (eg, FIG. 88) to prevent an increase in an operating voltage by removing an etch stop layer corresponding to the openings 62 and 63.
  • a structure eg, FIG. 88
  • the ratio of the total area of the lower electrodes 71,81 to the total area of the lower electrodes 71,81 or the planar area when viewed in plan view is preferable in terms of light absorption reduction, the lower area of the lower electrodes 71,81 When the total area or the ratio decreases, the operating voltage tends to increase. On the other hand, as the current supply becomes uniform, the luminous efficiency may be improved, thereby improving brightness.
  • the case in which the etch stop layer of the lower electrodes 71 and 81 corresponding to the openings 62 and 63 is removed to prevent the operating voltage from rising is increased. It is advantageous in terms of suppression of increase and improvement of luminance.
  • the operation voltage is higher than that of the comparative example due to the structure preventing the rise of the operating voltage even if the lower electrode is smaller than the comparative example in this example. It can not be high. Therefore, the light absorption may be further reduced without higher operating voltage, so that the brightness may be better.
  • the present example may have a lower operating voltage.
  • a nonconductive reflecting film 91 is formed on the current spreading conductive film 60.
  • the dielectric film 91b, the first distributed Bragg reflector 91a, and the clad film 91c are formed to cover the current spreading conductive film 60.
  • the dielectric film 91b or the clad film 91c may be omitted.
  • the first distributed Bragg reflector 91a is formed by stacking a pair of SiO 2 and TiO 2 a plurality of times, for example.
  • the first distribution Bragg reflector 91a may be formed of a combination of a high refractive index material such as Ta 2 O 5 , HfO, ZrO, SiN, and a dielectric thin film having a lower refractive index (typically SiO 2 ).
  • a high refractive index material such as Ta 2 O 5 , HfO, ZrO, SiN
  • a dielectric thin film having a lower refractive index typically SiO 2 .
  • an optimization process is considered in consideration of the incident angle and reflectance according to the wavelength based on an optical thickness of 1/4 of the wavelength of the light emitted from the active layer 40. It is desirable to pass through, and the thickness of each layer does not necessarily have to conform to 1/4 optical thickness of the wavelength.
  • the number of combinations is suitable for 4 to 40 pairs.
  • the effective refractive index of the first distributed Bragg reflector 91a is larger than that of the dielectric film 91b for the reflection and guide of light.
  • the first distributed Bragg reflector 91a is composed of SiO 2 / TiO 2
  • the refractive index of SiO 2 is 1.46 and the refractive index of TiO 2 is 2.4
  • the effective refractive index of the distributed Bragg reflector is a value between 1.46 and 2.4.
  • the dielectric film 91b may be made of SiO 2 , and the thickness thereof is appropriately 0.2um to 1.0um.
  • the first distributed Bragg reflector 91a Prior to the deposition of the first distributed Bragg reflector 91a, which requires precision, the first distributed Bragg reflector 91a can be stably manufactured and helps to reflect light by forming the dielectric film 91b having a predetermined thickness. Can give
  • the clad film 91c may be made of a metal oxide such as Al 2 O 3 , a dielectric film 91b such as SiO 2 , SiON, MgF, CaF, or the like.
  • the clad film 91c may also be formed of SiO 2 having a refractive index of 1.46 smaller than the effective refractive index of the first distributed Bragg reflector 91a.
  • the clad film 91c preferably has a thickness of? / 4n to 3.0 um.
  • ⁇ is a wavelength of light generated in the active layer 40
  • the uppermost layer of the distributed Bragg reflector 91a composed of a plurality of pairs of SiO 2 / TiO 2 may be TiO 2 , considering that it can be made of an SiO 2 layer having a thickness of about ⁇ / 4n, the clad film 91c ) Is preferably thicker than [lambda] / 4n so as to be different from the top layer of the distributed Bragg reflector 91a.
  • the clad film 91c is too thick, not less than 3.0 ⁇ m, because not only a burden on the subsequent opening forming process but also an increase in thickness does not contribute to the efficiency improvement and only a material cost can be increased. Therefore, in order not to burden the subsequent process, the maximum value of the thickness of the clad film 91c may be appropriately formed within 1 ⁇ m to 3 ⁇ m. However, in some cases, it is not impossible to form more than 3.0um.
  • the first distributed Bragg reflector 91a and the connecting electrodes 72a, 72b, 82a, and 82b are in direct contact with each other, part of the light traveling through the first distributed Bragg reflector 91a is connected to the connecting electrodes 72a, 72b, and 82a. 82b). Therefore, as described above, when the clad film 91c having a lower refractive index than the first distribution Bragg reflector 91a is introduced, light absorption by the connection electrodes 72a, 72b, 82a, and 82b may be greatly reduced.
  • the dielectric film 91b is omitted from the viewpoint of the overall technical idea of the present disclosure, and the first distributed Bragg reflector 91a and the clad film 91c may be considered. There is no reason to exclude the configuration. Instead of the first distributed Bragg reflector 91a, a case in which a dielectric film 91b made of TiO 2 is used as a dielectric may be considered. In the case where the first distributed Bragg reflector 91a includes the SiO 2 layer on the uppermost layer, the case where the clad film 91c is omitted may also be considered.
  • the first distributed Bragg reflector 91a includes the TiO 2 layer at the top. In this case, the case where the clad film 91c is omitted may also be considered.
  • the dielectric film 91b, the first distributed Bragg reflector 91a, and the clad film 91c serve as the optical waveguides as the non-conductive reflecting film 91, and preferably have a total thickness of 1 to 8 um. .
  • a plurality of openings 62 and 63 are formed in the nonconductive reflecting film 91.
  • the opening forming process the method described in FIGS. 86 and 87 may be used.
  • the layer structure described with reference to FIG. 88 may be adopted as an example of the layer structure of the lower electrodes 71 and 81.
  • embodiments without removing the etch stop layer are also possible.
  • connecting electrodes 72a, 72b, 82a, and 82b are disposed on the non-conductive reflecting film 91 using, for example, sputtering equipment, E-beam equipment, or the like. And the lower electrical connections 73 and 83 are formed. Some of the plurality of openings 62 and 63 communicate with the plurality of grooves 61 exposing the first semiconductor layer 30, respectively, and the remaining openings 62 are formed on the current spreading conductive film 60. The second lower electrode 81 is exposed. The lower electrical connections 73 and 83 electrically connect the connection electrodes 72a, 72b, 82a and 82b and the lower electrodes 71 and 81 through the openings 62 and 63, respectively.
  • connection electrodes 72a, 72b, 82a, and 82b may have a multilayer structure, and the shape and pattern of the connection electrodes 72, 74, 82, and 84 may be variously changed.
  • an island connection electrode and an extension connection electrode may be provided, and the plurality of second extension connection electrodes may extend outward from the second upper electrode to be parallel to each other and extend below the first upper electrode.
  • the plurality of first extended connection electrodes extend outward from the first upper electrode to the outside between the plurality of second extended connection electrodes and extend under the second upper electrode.
  • the shape of the connection electrode may be variously changed.
  • an insulating film 95 or an additional reflective film is formed as a neutral film on the non-conductive reflective film 91.
  • the insulating film 95 is formed to cover the connection electrodes 72a, 72b, 82a, and 82b.
  • the insulating film 95 may be made of a single insulating layer (eg SiO 2, SiN, TiO 2 , Al 2 O 3 , Su-8, etc.), it is also possible to have a second distributed Bragg reflector to improve the reflectance. Do. In this case, the second distributed Bragg reflector may have a thickness smaller than that of the first distributed Bragg reflector.
  • the insulating film 95 may also include a lower dielectric film / second distributed Bragg reflector / upper dielectric film. In particular, the amount of light absorbed by the upper electrodes 75 and 85 may be reduced by making the refractive index of the upper dielectric film smaller than that of the second distributed Bragg reflector.
  • openings 64 and 65 are formed in the insulating film 95.
  • the openings 64 and 65 are formed at appropriate positions to electrically connect the first upper electrode 75 and the second upper electrode 85 to the connection electrodes 72a and 72b and the connection electrodes 82a and 82b, respectively.
  • the openings 64 and 65 formed in the insulating film 95 may be formed so as not to overlap or overlap the openings 64 and 65 formed in the non-conductive reflective film 91.
  • the first upper electrode 75 and the second upper electrode 85 are deposited on the insulating film 95 using sputtering equipment, E-beam equipment, or the like.
  • the first upper electrode 75 and the second upper electrode 85 are disposed to face each other. Some light passing through the insulating layer 95 is reflected by the first upper electrode 75 and the second upper electrode 85.
  • the first upper electrode 75 and the second upper electrode 85 are connected to the connection electrodes 72a and 72b and the connection electrodes 82a and 82b through the openings 64 and 65, respectively.
  • the first upper electrode 75 and the second upper electrode 85 may be electrically connected to an electrode provided outside (package, COB, submount, etc.) by a stud bump, a conductive paste, or a eutectic bonding method.
  • the first upper electrode 75 and the second upper electrode 85 may have a multilayer structure (eg, see FIG. 93).
  • the present disclosure may also be applied to a light emitting device in which an electrode is formed on a first semiconductor layer from which a substrate is removed or under a conductive substrate.
  • an embodiment in which any one of the first upper electrode 75 and the second upper electrode 85 is formed on the non-conductive reflecting film 91 and the other is formed on the insulating film 95 may be considered.
  • an embodiment in which the first upper electrode 75 is formed on the exposed first semiconductor layer by mesa etching and the second upper electrode 85 is formed on the non-conductive reflective film or the insulating film 95 may be considered.
  • a semiconductor light emitting device characterized in that formed in a closed loop) shape.
  • Also included in the present disclosure is a structure in which a conductive layer covering any one of the first connection electrode and the second connection electrode is formed instead of the insulating layer, and one of the first electrode and the second electrode is formed over the conductive layer.
  • the present disclosure also includes a case where a plurality of closed loop connection electrodes sharing a first center and a plurality of connection loops having a closed loop shape sharing a second center are also included in the present disclosure.
  • the present disclosure also includes a case in which one first connection electrode and one second connection electrode are configured, one of which has a closed loop shape, and the first connection electrode is positioned inside the second connection electrode. Or vice versa.
  • a plurality of first openings and a plurality of second openings are formed in the reflective layer, the first connection electrode is electrically connected to the first semiconductor layer through the plurality of first openings, and the second connection electrode is formed of a plurality of second openings. And a second semiconductor layer electrically connected to the second semiconductor layer through two openings.
  • Both the first connection electrode and the second connection electrode have a closed loop shape, and at least one third opening and at least one fourth opening are formed in the insulating layer, and the first electrode defines at least one third opening.
  • a second electrode electrically connected to the first connection electrode through the second connection electrode through at least one fourth opening.
  • the second connection electrode includes: an outer second connection electrode having a closed loop shape
  • connection electrode has a closed loop shape, and a second opening is not located inside the closed loop of the second connection electrode.
  • the first connection electrode connects the plurality of first openings in a closed loop shape
  • the second connection electrode connects the plurality of second openings in a closed loop shape
  • the reflective layer includes: a distributed Bragg reflector for reflecting light from the active layer.
  • the reflective layer includes: a dielectric film positioned between the plurality of semiconductor layers and the distributed Bragg reflector, the refractive index being smaller than the effective refractive index of the distributed Bragg reflector; A clad film positioned on an opposite side of the plurality of semiconductor layers on the basis of the distributed Bragg reflector and having a refractive index smaller than the effective refractive index of the Distributed Bragg reflector; A semiconductor light emitting device comprising at least one of.
  • the reflective layer may include a conductive reflective film.
  • a conductive reflective film may be positioned instead of the cladding layer.
  • the conductive reflecting film may be partially formed on the distribution Bragg reflector to electrically block the first connecting electrode and the second connecting electrode, and the first connecting electrode or the second connecting electrode may be positioned on the conductive reflecting film.
  • a semiconductor light emitting element comprising a conductive film electrically connected to a second connection electrode connected to a second opening between a plurality of semiconductor layers and a dielectric film.
  • a semiconductor light emitting element characterized in that a part of the inner second connection electrode is positioned between the first electrode and the second electrode when viewed in plan view.
  • the second electrode covers all of the inner second connection electrodes, and the first electrode is formed at one edge of the reflective layer and protrudes from the first connection electrode to be electrically connected to the first electrode.
  • a semiconductor light emitting device characterized in that.
  • a plurality of semiconductor layers having active layers to generate; A reflecting layer reflecting light from the active layer toward the plurality of semiconductor layers, wherein at least one first opening and a plurality of second openings are formed; A first connection electrode electrically connected to the first semiconductor layer through the at least one first opening; A second connection electrode electrically connected to the second semiconductor layer through the plurality of second openings; A first electrode electrically connected to the first connection electrode to supply one of electrons and holes to the first semiconductor layer; And
  • a second electrode electrically connected to the second connection electrode to supply the other one of electrons and holes to the second semiconductor layer, wherein the plurality of second openings are positioned around the internal opening and the internal opening. And at least two peripheral openings, the inner opening being electrically connected to the at least two peripheral openings by a second connection electrode.
  • a semiconductor light emitting element wherein the second connection electrode supplies holes to the second semiconductor layer.
  • a semiconductor light emitting device characterized in that the first connection electrode has a closed loop shape so as to surround the second connection electrode.
  • the present disclosure also includes a case where a plurality of closed loop connection electrodes sharing a first center and a plurality of connection loops having a closed loop shape sharing a second center are also included in the present disclosure.
  • a third connection electrode positioned outside the first connection electrode to supply the other one of electrons and holes, wherein the third connection electrode is electrically connected to the second electrode.
  • (21) A semiconductor light emitting element, wherein the second connection electrode covers the plurality of second openings.
  • the second connection electrode includes a connecting branch whose inner opening connects at least two peripheral openings.
  • a semiconductor light emitting element characterized in that when viewed in plan, the internal electrode is located between the first electrode and the second electrode.
  • Also included in the present disclosure is a structure in which a conductive layer covering any one of the first connection electrode and the second connection electrode is formed instead of the insulating layer, and one of the first electrode and the second electrode is formed over the conductive layer.
  • a reflective layer comprising: a distributed Bragg reflector that reflects light from the active layer.
  • the reflective layer includes: a dielectric film positioned between the plurality of semiconductor layers and the distributed Bragg reflector, the refractive index being smaller than the effective refractive index of the distributed Bragg reflector; A clad film positioned on an opposite side of the plurality of semiconductor layers on the basis of the distributed Bragg reflector and having a refractive index smaller than the effective refractive index of the Distributed Bragg reflector; A semiconductor light emitting device comprising at least one of.
  • the reflective layer may include a conductive reflective film.
  • a conductive reflective film may be positioned instead of the cladding layer.
  • the conductive reflecting film may be partially formed on the distribution Bragg reflector to electrically block the first connecting electrode and the second connecting electrode, and the first connecting electrode or the second connecting electrode may be positioned on the conductive reflecting film.
  • a semiconductor light emitting element characterized in that the first opening, two successive second openings located in the first row, and the second opening located in the second row form a vertex of the first quadrangle.
  • a semiconductor light emitting element comprising the first opening, two consecutive second openings located in the second row, and the second opening located in the first row form a vertex of the first quadrangle.
  • At least one of the first connection electrode and the second connection electrode has a closed loop shape, characterized in that the semiconductor light emitting device.
  • the second connection electrode is positioned outside the first connection electrode, is located inside the first connection electrode, and includes a third connection electrode connecting the plurality of second openings; And three second openings connected by the first opening and the first opening located at the first connection electrode form a vertex of the second quadrangle.
  • the second connection electrode is positioned outside the first connection electrode and is located outside the second connection electrode, and includes a third connection electrode connecting the plurality of first openings;
  • a plurality of second openings arranged in the first row, the second row, and the third row, which are adjacent to the first connection electrode in sequence, one first opening located in the first connection electrode, and two located in the first row.
  • a semiconductor light emitting device characterized in that one first opening forms a vertex of a second quadrangle.
  • a semiconductor light emitting element wherein the first rectangle and the second rectangle have the same shape and size.
  • one second opening located in the first row, two second openings located in the second row, and one second opening located in the third row form a vertex of a third quadrangle
  • the second connection electrode comprises A semiconductor light emitting device, characterized in that it is patterned along the shape of a rectangle of 3.
  • the reflective layer includes: a distributed Bragg Reflector that reflects light from the active layer; And a dielectric film having a refractive index smaller than an effective refractive index of the distribution Bragg reflector on at least one of the upper side and the lower side of the distribution Bragg reflector, wherein the second connection electrode is located outside the first connection electrode and is located inside the first connection electrode.
  • a third connection electrode positioned at and connected to the plurality of second openings, wherein the first opening, two second openings located in the first row, and one second opening located in the second row define a vertex of the rectangle. And a closed loop shape of at least one of the first connection electrode and the second connection electrode.
  • the ohmic electrode includes: an ohmic contact pad partially exposed by the plurality of second openings to contact the second connection electrode; And at least one ohmic contact branch protruding from the ohmic contact pad.
  • the ohmic electrode includes: a contact layer formed on the conductive film; A reflective metal layer formed on the contact layer to reflect light; A first barrier layer formed over the reflective metal layer to prevent diffusion of the reflective metal layer; An antioxidant layer formed over the first barrier layer; And a second barrier layer formed on the antioxidant layer and in contact with the reflective layer.
  • a semiconductor light emitting element wherein the ohmic electrode is partially exposed by the second opening, and the reflective layer is formed to rise to the edge of the ohmic electrode.
  • At least one of the first connection electrode and the second connection electrode connects a plurality of first openings or a plurality of second openings in a closed loop shape.
  • a current blocking layer positioned between the second semiconductor layer and the ohmic electrode;
  • a transmissive conductive film covering the current blocking layer and positioned between the second semiconductor layer and the reflective layer;
  • an insulating layer interposed between the first electrode and the second electrode and the first connection electrode and the second connection electrode, the reflection layer comprising: a distributed Bragg reflector for reflecting light from the active layer; And a dielectric film positioned between the transparent conductive film and the distributed Bragg reflector and having a refractive index smaller than the effective refractive index of the distributed Bragg reflector, and a clad film positioned between the distributed Bragg reflector and the insulating layer and having a refractive index smaller than the effective refractive index of the Distributed Bragg reflector;
  • the ohmic electrode is in contact with the transparent conductive film and the second connecting electrode on the transparent conductive film, and at least one of the first connecting electrode and the second connecting electrode has a closed loop shape.
  • An ohmic contact pad connecting one opening or a plurality of second openings, the ohmic electrode being partially exposed by the plurality of second openings to contact the second connection electrode; And at least one ohmic contact branch protruding from the ohmic contact pad in a width smaller than that of the ohmic contact pad.
  • a semiconductor light emitting device comprising: a first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity, and interposed between the first semiconductor layer and the second semiconductor layer and having electrons and holes A plurality of semiconductor layers having an active layer that generates light through recombination of the semiconductors; A first electrode part in electrical communication with the first semiconductor layer and supplying one of electrons and holes; A second electrode part in electrical communication with the second semiconductor layer and supplying the other one of electrons and holes; A non-conductive reflecting film formed over the plurality of semiconductor layers to reflect light generated in the active layer toward the first semiconductor layer, the opening having an opening; And an additional reflecting film formed on the non-conductive reflecting film to reflect light transmitted through the non-conductive reflecting film toward the first semiconductor layer, wherein at least one of the first electrode part and the second electrode part is exposed at least partially by an opening.
  • a lower electrode electrically connected to the plurality of semiconductor layers; And a connecting electrode formed between the nonconductive reflecting film and the additional reflecting film and electrically connected
  • a semiconductor light emitting device characterized in that the nonconductive reflecting film includes a first distributed Bragg reflector (DBR).
  • DBR distributed Bragg reflector
  • a semiconductor light emitting element wherein the additional reflecting film is a metal reflecting film.
  • Additional reflective films include: a lower dielectric film between the second distributed Bragg reflector and the non-conductive reflective film; And an upper dielectric film on the second distributed Bragg reflector; A semiconductor light emitting device comprising at least one of.
  • At least one of the first electrode portion and the second electrode portion is formed over the additional reflective film and electrically connected to the connecting electrode through an opening formed in the additional reflective film.
  • Upper electrode; semiconductor light emitting device comprising a.
  • a semiconductor light emitting element characterized in that a plurality of openings are formed in the nonconductive reflecting film, and the connection electrode connects the plurality of openings.
  • the lower electrode is a semiconductor light emitting device, characterized in that distributed over a plurality of semiconductor layers in the form of a plurality of islands.
  • the connecting electrode includes: a contact layer in contact with the lower electrode through an opening formed in the nonconductive reflecting film; And an etch stop layer formed over the contact layer and having a portion corresponding to the opening formed in the additional reflective film removed.
  • a nonconductive reflecting film includes: a dielectric film between a plurality of semiconductor layers and a first distributed Bragg reflector; And a clad film between the first distributed Bragg reflector and the additional reflective film; A semiconductor light emitting device comprising at least one of.
  • the lower electrode includes: a contact layer in electrical communication with the plurality of semiconductor layers; A reflective layer formed over the contact layer; A diffusion barrier layer formed on the reflective layer; An antioxidant layer formed on the diffusion barrier layer; And an etch stop layer formed on the antioxidant layer, from which a portion corresponding to the opening is removed, wherein the connection electrode contacts the antioxidant layer.
  • the first electrode portion and the second electrode portion include a lower electrode, a connecting electrode and an upper electrode, respectively, wherein the lower electrode of the first electrode portion is formed on the exposed first semiconductor layer by etching, and the second lower electrode is formed of the first electrode portion.
  • 2 is formed on the semiconductor layer, the first opening and the second opening are formed in the non-conductive reflective film, and the connecting electrode of the first electrode part is connected to the lower electrode of the first electrode part, leading to the first opening, and the connecting electrode of the second electrode part.
  • a plurality of first openings and a plurality of second openings are formed in the non-conductive reflecting film, and the connecting electrodes of the first electrode part connect the plurality of first openings on the non-conductive reflecting film, and the connecting electrodes of the second electrode part are non-conductive.
  • a semiconductor light emitting device comprising: a first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity, and interposed between the first semiconductor layer and the second semiconductor layer and having electrons and holes A plurality of semiconductor layers having an active layer that generates light through recombination of the semiconductors; A first electrode part in electrical communication with the first semiconductor layer and supplying one of electrons and holes; A second electrode part in electrical communication with the second semiconductor layer and supplying the other one of electrons and holes; And a non-conductive reflective film formed on the plurality of semiconductor layers to reflect the light generated from the active layer toward the first semiconductor layer, wherein the first opening is formed, wherein at least one of the first electrode portion and the second electrode portion includes: An island type lower electrode corresponding to the first opening, the lower electrode exposing at least a portion of the lower electrode by the first opening; And a connection electrode provided on the non-conductive reflecting film and electrically connected to the lower electrode through the first opening.
  • the lower electrode includes: a contact layer interposed between the plurality of semiconductor layers and the nonconductive reflecting film; A reflective layer formed over the contact layer; A diffusion barrier layer formed on the reflective layer; An antioxidant layer formed on the diffusion barrier layer; And an etch stop layer formed on the antioxidant layer, wherein the etch stop layer corresponding to the first opening is removed, and the connection electrode filling the first opening contacts the antioxidant layer.
  • a semiconductor light emitting device characterized in that the periphery of the lower electrode is exposed by the first opening, and the connection electrode is in contact with the top and side surfaces of the lower electrode.
  • the non-conductive reflecting film includes: Distributed Bragg Reflector; A dielectric film interposed between the plurality of semiconductor layers and the distributed Bragg reflector and having a refractive index smaller than that of the Distributed Bragg reflector; And a clad film interposed between the distribution Bragg reflector and the connection electrode and having a refractive index smaller than that of the Distribution Bragg reflector.
  • the second electrode portion includes a lower electrode and a connecting electrode, wherein an exposed surface etched from the non-conductive reflective film and having a reduced height difference forms an upper rim of the first opening exposing the lower electrode of the second electrode portion.
  • a semiconductor light emitting device characterized in that.
  • an electrode unit including an electrode and a connecting electrode: an upper electrode formed on the neutral layer and electrically connected to the connecting electrode through the neutral layer.
  • At least one of the non-conductive reflecting film and the neutral film includes a distributed Bragg reflector.
  • a plurality of first openings are formed in the non-conductive reflective film, and the first electrode portion and the second electrode portion include a lower electrode, a connecting electrode, and an upper electrode, respectively, and the connection electrode and the second electrode portion of the first electrode portion are connected.
  • At least one of the electrodes has a closed loop shape and connects the plurality of first openings, and when viewed in a top view, the close loop-shaped electrode closest to the center is connected to the first electrode portion.
  • at least one second lower electrode is provided inside the connection electrode of the first electrode part of the closed loop shape closest to the center.
  • a plurality of first openings are formed in the non-conductive reflective film, and the first electrode portion and the second electrode portion include a lower electrode, a connecting electrode, and an upper electrode, respectively, and the connecting electrode and the second electrode portion are connected to each other.
  • At least one of the electrodes has a closed loop shape and connects the plurality of first openings, and when viewed in a top view, the close loop-shaped electrode closest to the center is connected to the second electrode portion.
  • at least one second lower electrode provided inside the connection electrode of the second electrode part in the closed loop shape closest to the center.
  • a second pad portion formed around the first current spreading portion 72b to connect the plurality of second lower electrodes and bonded to the outside; and formed around the first pad portion from the second pad portion, the plurality of lower electrodes And a second current spreading unit connecting the second current spreading unit.
  • the first electrode portion and the second electrode portion each include an upper electrode, an island connection electrode, an extension connection electrode, a plurality of upper electrical connections, and a plurality of lower electrical connections, and the extended connection electrode of the first electrode portion may include a first electrode portion. And an extension type connecting electrode of the second electrode portion extending below the upper electrode of the first electrode portion.
  • At least one of the first electrode portion and the second electrode portion includes: a lower electrode interposed between the plurality of semiconductor layers and each lower electrical connection.
  • At least one of the non-conductive reflecting film and the insulating film includes a distributed Bragg reflector.
  • the upper electrode of the first electrode portion is patterned to avoid overlapping with the extended connection electrode of the second electrode portion, and the upper electrode of the second electrode portion is patterned to avoid overlapping with the extended connection electrode of the first electrode portion.
  • a semiconductor light emitting device characterized in that.
  • the lower electrode includes: a contact layer interposed between the plurality of semiconductor layers and the nonconductive reflecting film; A reflective layer formed over the contact layer; A diffusion barrier layer formed on the reflective layer; An antioxidant layer formed on the diffusion barrier layer; And an etch stop layer formed on the antioxidant layer, wherein the etch stop layer corresponding to the first opening is removed, and a lower electrical connection filling the first opening contacts the antioxidant layer.
  • An opening through which each lower electrical connection penetrates is formed in the nonconductive reflecting film, and the second electrode part includes a lower electrode, and an exposed surface of which the height difference is reduced by being etched in the nonconductive reflecting film exposes the lower electrode of the second electrode part.
  • a semiconductor light emitting device comprising an upper rim of an opening.
  • At least one of the nonconductive reflecting film and the insulating film includes: a dielectric film in contact with the lower surface of the distribution Bragg reflector and having a refractive index smaller than that of the distribution Bragg reflector; And a clad film in contact with an upper surface of the distribution Bragg reflector and having a refractive index smaller than that of the Distribution Bragg reflector.
  • the first electrode portion and the second electrode portion each include an upper electrode, a plurality of island connection electrodes, a plurality of extension connection electrodes, a plurality of upper electrical connections, and a plurality of lower electrical connections, respectively.
  • the extended connection electrode extends under the upper electrode of the second electrode portion, and the extended connection electrode of each second electrode portion extends below the upper electrode of the first electrode portion between the extended connection electrodes of the plurality of first electrode portions.
  • the semiconductor light emitting device is elongated on one side of the plan view, and includes a first electrode upper electrode, an island connection electrode, an extension connection electrode, a plurality of upper electrical connections and a plurality of lower electrical connections, and a second electrode.
  • the part includes an upper electrode, an island connection electrode, a plurality of upper electrical connections, and a plurality of lower electrical connections, wherein the extended connection electrode of the first electrode portion extends below the upper electrode of the second electrode portion, and the upper electrode of the second electrode portion
  • a semiconductor light emitting device characterized in that it extends around the upper electrode of the electrode portion.
  • the uniformity of current supply is improved through a closed loop connection electrode, thereby improving the uniformity of light emission and preventing deterioration of the device due to current concentration.
  • the opening for supplying current is not located in the inner region of the innermost closed loop connection electrode, the heat generation amount is reduced, thereby reducing the temperature difference between the center region and the other region for long-term performance.
  • the uniformity of current supply in the flip chip type device is improved, and the light absorption by the metal reflective film is reduced.
  • a plurality of first openings and second openings are formed to facilitate current diffusion to a plurality of semiconductor layers.
  • light emission is maintained or improved by adding an inner opening of the same polarity as the peripheral peripheral opening in the center of the region covered by the second connection electrode.
  • the uniformity of current supply is improved through the closed loop connection electrode, thereby improving the uniformity of light emission and preventing deterioration due to current concentration.
  • the uniformity of current supply in the flip chip type semiconductor light emitting device is improved, and light absorption by the metal reflective film is reduced.
  • a plurality of openings are formed to facilitate current diffusion into the plurality of semiconductor layers.
  • the present disclosure it is possible to further increase the hole diffusion and uniformity, as compared with the case in which a plurality of second openings connected by the second connection electrode are arranged in a single row. A quantitative balance with the electron density supplied to the opening or the degree of diffusion may also be better.
  • the uniformity of current supply is improved through the closed loop connection electrode, thereby improving the uniformity of light emission and preventing deterioration of the device due to current concentration.
  • the uniformity of current supply in the flip chip type device is improved, and the light absorption by the metal reflective film is reduced.
  • a plurality of first openings and second openings are formed to facilitate current diffusion to a plurality of semiconductor layers.
  • the first ohmic electrode and the second ohmic electrode are introduced to facilitate current supply and lower the operating voltage.
  • light absorption is reduced by using a nonconductive reflecting film including a distributed Bragg reflector instead of a metal reflecting film.
  • a plurality of first openings and second openings are formed to facilitate current diffusion to a plurality of semiconductor layers.
  • a plurality of openings are connected to the connection electrode of a closed loop shape so that the current is supplied more evenly.
  • the luminance is improved by reducing the light absorption loss by using the non-conductive reflecting film instead of the metal reflecting film.
  • connection electrode-bottom electrode structure through the plurality of openings evenly formed in the non-conductive reflecting film facilitates the diffusion of current to the plurality of semiconductor layers, it is provided on the first semiconductor layer and / or the second semiconductor layer for current diffusion. It is not necessary to form a long metal band like an electrode, or a small number is sufficient, so that the light absorption loss by the metal is further reduced.
  • first connection electrode and the second connection electrode directly contact the first semiconductor layer or the current spreading conductive layer through the opening, electrical contact may not be good.
  • the first lower electrode and the second lower electrode may be connected to the connection electrode. Electrical contact between the first semiconductor layer and the current spreading conductive film is improved (eg, contact resistance is reduced).
  • the upper surface of the lower electrode or the connecting electrode is influenced to prevent the electrical contact from being lowered.
  • connection electrode connects the plurality of openings in a closed loop shape so that the current is supplied more evenly, thereby preventing deterioration due to current bias.
  • the luminance is improved by reducing the light absorption loss by using the non-conductive reflecting film instead of the metal reflecting film.
  • connection electrode-bottom electrode structure through the plurality of openings evenly formed in the non-conductive reflecting film facilitates the diffusion of current to the plurality of semiconductor layers, it is provided on the first semiconductor layer and / or the second semiconductor layer for current diffusion. It is not necessary to form a long metal band like an electrode, or a small number is sufficient, so that the light absorption loss by the metal is further reduced.
  • first connection electrode and the second connection electrode directly contact the first semiconductor layer or the current spreading conductive layer through the opening, electrical contact may not be good.
  • the first lower electrode and the second lower electrode may be connected to the connection electrode. Electrical contact between the first semiconductor layer and the current spreading conductive film is improved (eg, contact resistance is reduced).
  • the upper surface of the lower electrode or the connecting electrode is influenced to prevent the electrical contact from deteriorating.
  • connection electrode is connected to a plurality of openings by variously changing the closed loop shape, the finger shape, and the like, so that current is supplied more evenly, thereby preventing deterioration due to current bias.
  • the luminance is improved by reducing the light absorption loss by using the non-conductive reflecting film instead of the metal reflecting film.
  • connection electrode-bottom electrode structure through the plurality of openings evenly formed in the non-conductive reflecting film facilitates current diffusion to the plurality of semiconductor layers, thereby preventing deterioration due to current bias.
  • first connection electrode and the second connection electrode directly contact the first semiconductor layer or the current spreading conductive layer through the opening, electrical contact may not be good.
  • the first lower electrode and the second lower electrode may be connected to the connection electrode. Electrical contact between the first semiconductor layer and the current spreading conductive film is improved (eg, contact resistance is reduced).
  • the upper surface of the lower electrode is affected to prevent the electrical contact from deteriorating.

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

La présente invention concerne une diode électroluminescente semi-conductrice, ladite diode électroluminescente semi-conductrice comportant : une pluralité de couches semi-conductrices comportant une première couche semi-conductrice ayant une première conductivité, une seconde couche semi-conductrice ayant une seconde conductivité, et une couche active intercalée entre la première couche semi-conductrice et la seconde couche semi-conductrice, pour produire de la lumière au moyen d'une recombinaison d'électrons et de trous ; une première partie d'électrode qui communique électriquement avec la première couche semi-conductrice et fournit des électrons ou des trous d'électron ; une second partie d'électrode qui communique électriquement avec la seconde couche semi-conductrice et fournit les électrons ou trous d'électron restants non fournis par la première partie d'électron ; et un film réfléchissant non conducteur doté d'une première ouverture, la première partie d'électrode ou la seconde partie d'électrode comportant une électrode inférieure qui est une électrode inférieure de type en îlot correspondant à la première ouverture et dont une partie est exposée par l'intermédiaire de la première ouverture, et une électrode connective disposée au-dessus du film réfléchissant non conducteur et connectée électriquement à l'électrode inférieure par l'intermédiaire de la première ouverture.
PCT/KR2014/009591 2013-10-11 2014-10-13 Diode électroluminescente semi-conductrice WO2015053600A1 (fr)

Applications Claiming Priority (14)

Application Number Priority Date Filing Date Title
KR1020130121308A KR101544128B1 (ko) 2013-10-11 2013-10-11 반도체 발광소자
KR10-2013-0121308 2013-10-11
KR1020130121309A KR101543728B1 (ko) 2013-10-11 2013-10-11 반도체 발광소자
KR10-2013-0121309 2013-10-11
KR10-2013-0123235 2013-10-16
KR1020130123235A KR101553639B1 (ko) 2013-10-16 2013-10-16 반도체 발광소자
KR1020130137688A KR20150055390A (ko) 2013-11-13 2013-11-13 반도체 발광소자
KR10-2013-0137688 2013-11-13
KR1020140061620A KR20150141198A (ko) 2014-05-22 2014-05-22 반도체 발광소자
KR10-2014-0061620 2014-05-22
KR10-2014-0072872 2014-06-16
KR1020140072872A KR101591969B1 (ko) 2014-06-16 2014-06-16 반도체 발광소자
KR10-2014-0072875 2014-06-16
KR1020140072875A KR101604092B1 (ko) 2014-06-16 2014-06-16 반도체 발광소자

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US11309457B2 (en) 2016-01-05 2022-04-19 Semicon Light Co., Ltd. Semiconductor light-emitting element
CN106058002B (zh) * 2016-06-15 2018-11-09 青岛杰生电气有限公司 一种紫外发光器
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EP3534412A1 (fr) * 2018-02-28 2019-09-04 Nichia Corporation Élément luminescent et dispositif luminescent
CN108258089A (zh) * 2018-03-23 2018-07-06 广东省半导体产业技术研究院 发光二极管结构制作方法及发光二极管结构
WO2021018884A1 (fr) * 2019-07-29 2021-02-04 Osram Opto Semiconductors Gmbh Puce à semi-conducteur émettrice de rayonnement et procédé de production de puce à semi-conducteur émettrice de rayonnement
CN113162578A (zh) * 2021-01-13 2021-07-23 诺思(天津)微系统有限责任公司 滤波器、多工器以及电子设备
CN113162578B (zh) * 2021-01-13 2023-04-07 诺思(天津)微系统有限责任公司 滤波器、多工器以及电子设备
CN112951954A (zh) * 2021-01-28 2021-06-11 湘能华磊光电股份有限公司 一种发光二极管芯片及其制作工艺
TWI833182B (zh) * 2021-12-27 2024-02-21 南亞科技股份有限公司 半導體元件結構

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