WO2015040795A1 - 研磨パッドの評価方法及びウェーハの研磨方法 - Google Patents
研磨パッドの評価方法及びウェーハの研磨方法 Download PDFInfo
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- WO2015040795A1 WO2015040795A1 PCT/JP2014/004319 JP2014004319W WO2015040795A1 WO 2015040795 A1 WO2015040795 A1 WO 2015040795A1 JP 2014004319 W JP2014004319 W JP 2014004319W WO 2015040795 A1 WO2015040795 A1 WO 2015040795A1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/12—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means
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- the present invention relates to a polishing pad life evaluation method and a wafer polishing method using the evaluation method.
- the life of a polishing pad used for polishing a wafer is determined by monitoring multiple quality items of the wafer using an inspection device after cleaning the wafer actually polished with the polishing pad. It becomes clear only when an abnormality is detected.
- LPD Light Point Defects
- the LPD is measured by irradiating the surface of the wafer with laser light and condensing the reflected light.
- particles and COP Crystal Original Pit
- the reflected light is irregularly reflected. Therefore, the scattered light is collected by a light receiver to detect the presence of particles and COP.
- the diameters of particles and COPs to be measured are set in advance, and the total number of particles and COPs that are equal to or larger than the set diameter is measured.
- the measured value of LPD exceeds a reference value that is a criterion for pass / fail judgment, it is determined that the polishing pad has reached the end of life (see Patent Document 1).
- FIG. 8 shows an example of the relationship between the LPD of the wafer after double-side polishing and the usage time of the polishing pad.
- the vertical axis of the graph represents a value (LPD / reference value) obtained by dividing the measured value of LPD by the reference value serving as a criterion for pass / fail judgment, and the horizontal axis represents the usage time (min) of the polishing pad.
- the LPD measurement was performed three times, and a plurality of silicon wafers having a diameter of 300 mm were polished with a four-way double-side polishing apparatus, and the polished silicon wafer was washed and dried, and then manufactured by KLA-Tencor.
- the LPD was measured with Surfscan SP1.
- the polishing pad used was a foamed polyurethane pad (LP-57 manufactured by JH RHODES), and the slurry used was KOH alkali-based colloidal silica (GLANZOX2100 manufactured by Fujimi).
- LPD / reference value the value of (LPD / reference value) exceeds 1, the wafer is rejected and it is determined that the polishing pad has reached the end of its life.
- the graph of FIG. 8 shows the results of the above-described three measurements (Sample 1-3 in FIG. 8).
- each polishing pad shows a different life even though the same type of double-side polishing apparatus and members are used.
- the life of the polishing pad cannot be known until it is determined from the polished wafer that the LPD exceeds the reference value. Therefore, until the inspection result of the quality item is fed back, the polishing pad that has already reached its life will continue to be used for polishing, during which time wasted and the wafer (portion surrounded by a broken line in FIG. 8) occurs, There is also a problem that productivity and yield are lowered.
- the present invention has been made in view of the problems as described above, and can evaluate the life of the polishing pad immediately, and can evaluate the productivity and yield reduction when polishing the wafer. And it aims at providing the polishing method of a wafer.
- a polishing pad evaluation method for evaluating the life of a polishing pad for polishing a wafer, wherein the amount of polishing residue deposited on the polishing pad is measured.
- a polishing pad evaluation method is provided, wherein the life of the polishing pad is evaluated based on the measured value.
- the life can be evaluated directly from the polishing pad, and it can be determined immediately after the measurement whether or not each polishing pad has reached its life.
- time and wafer waste caused by polishing with a polishing pad that has reached the end of life can be reduced, and reductions in productivity and yield can be suppressed.
- the amount of the polishing residue can be measured by detecting a signal containing Si—K ⁇ ray from the fluorescent X-ray spectrum obtained by fluorescent X-ray analysis. In this way, when a silicon wafer is polished, the amount of polishing residue can be more easily measured by examining the amount of Si element on the polishing pad by fluorescent X-ray analysis.
- a primary approximation formula is obtained from the measured value of the amount of the polishing residue with respect to the usage time of the polishing pad, and the usage time at which the value of the primary approximation formula reaches a preset threshold is determined as the life of the polishing pad. It is preferable that In this way, by determining the usage time as the life of the polishing pad, when the usage time of the polishing pad reaches the predicted value, polishing can be temporarily interrupted and polishing is performed with the polishing pad that has reached the end of its life. The time and wafer waste caused by this can be reduced more reliably. As a result, it is possible to more reliably suppress a decrease in productivity and yield.
- a method for polishing a wafer is provided, wherein the life of the polishing pad is predicted based on the measured value, and the polishing pad is replaced when the usage time of the polishing pad reaches the predicted life. To do.
- the life of the polishing pad can be easily predicted. Furthermore, by replacing the polishing pad when the usage time of the polishing pad reaches the predicted life, it is possible to reduce the time and waste of the wafer caused by polishing the wafer with the polishing pad that has reached the end of the life. . As a result, a decrease in productivity and yield can be suppressed.
- the amount of the polishing residue can be measured by detecting a signal containing Si—K ⁇ ray from the fluorescent X-ray spectrum obtained by fluorescent X-ray analysis. In this way, when a silicon wafer is polished, the amount of polishing residue can be easily measured by examining the amount of Si element on the polishing pad by fluorescent X-ray analysis.
- a primary approximation formula is obtained from the measured value of the amount of the polishing residue with respect to the usage time of the polishing pad, and the usage time at which the value of the primary approximation formula reaches a preset threshold is determined as the life of the polishing pad. It is preferable to predict. By predicting the life of the polishing pad in this way, it is possible to more surely reduce wasted time and rejected wafers, and to more reliably suppress a decrease in productivity and yield.
- polishing pad evaluation method and the wafer polishing method of the present invention it is possible to immediately evaluate the life of the polishing pad having a large individual difference, and to suppress the decrease in productivity and yield when polishing the wafer. Can do.
- the life of the polishing pad is highly variable and difficult to predict, and since the life of the polishing pad was examined indirectly from the quality items of the polished wafer, only after the polishing pad reached its life, There was a problem that the life of the polishing pad was unknown.
- the present inventors examined determining the life of the polishing pad directly by examining the polishing pad itself, not the polished wafer. As a result, the inventors focused on the amount of polishing residue deposited on the polishing pad, which is said to cause LPD. Then, the inventors have conceived that the life of the polishing pad is individually evaluated from the amount of the polishing residue, thereby completing the present invention.
- the evaluation method of the polishing pad of this invention is demonstrated.
- a case where the polishing pad evaluation method of the present invention is applied to double-side polishing of a silicon wafer will be described as an example.
- a plurality of silicon wafers to be polished are prepared (A in FIG. 1).
- a double-side polishing apparatus for double-side polishing a silicon wafer is prepared. The double-side polishing apparatus used at this time will be described below with reference to FIGS.
- the double-side polishing apparatus 1 includes an upper surface plate 2 and a lower surface plate 3 that are provided opposite to each other in the vertical direction.
- a polishing pad 4 is affixed.
- a sun gear 5 is provided at the center between the upper surface plate 2 and the lower surface plate 3, and an internal gear 6 is provided at the peripheral portion.
- the silicon wafer W is held in the holding hole 8 of the carrier 7 and is sandwiched between the upper surface plate 2 and the lower surface plate 3.
- the teeth of the sun gear 5 and the internal gear 6 are meshed with the outer peripheral teeth of the carrier 7, and the carrier 7 is rotated as the upper surface plate 2 and the lower surface plate 3 are rotated by a drive source (not shown). Revolves around the sun gear 5 while rotating. At this time, both sides of the silicon wafer W held in the holding hole 8 of the carrier 7 are simultaneously polished by the upper and lower polishing pads 4.
- a polishing liquid is supplied from a nozzle (not shown). Double-side polishing as described above is repeated, and a plurality of silicon wafers W are polished on both sides in a batch manner (B in FIG. 1).
- the amount of polishing residue deposited on the polishing pad 4 is measured before starting the next polishing between batches for performing double-side polishing of silicon wafers using this polishing apparatus 1 (C in FIG. 1). As described above, it has been found that the amount of polishing residue has a correlation with LPD. Therefore, in the present invention, the life of the polishing pad is evaluated from the measured value of the amount of polishing residue (D in FIG. 1).
- the amount of polishing residue can be measured between batches of double-side polishing.
- fluorescent X-ray analysis can be used.
- a hand-held X-ray fluorescence analyzer that is easy to carry can be used, so that measurement can be performed easily and in a short time with the polishing pad still attached to the surface plate.
- the polishing residue deposited on the polishing pad 4 contains Si element. Therefore, if a signal including Si-K ⁇ ray in the fluorescent X-ray spectrum is detected, the amount of polishing residue is detected. Can be measured. More specifically, a value obtained by integrating the signal amount in the range of 1.6 to 1.9 eV including the Si—K ⁇ ray from the detected fluorescent X-ray spectrum is used as a guide value for the amount of polishing residue. (Hereinafter, this reference value of the amount of polishing residue is referred to as the Si signal amount). Before the measurement, it is desirable to wipe off the water on the surface of the polishing pad with a dry cloth or the like.
- FIG. 4 is a graph in which the Si signal amount is measured simultaneously with the LPD measurement shown in FIG. 8 and the measurement result of the Si signal amount is also displayed.
- MESA-630 manufactured by HORIBA, Ltd. was used for measurement of the Si signal amount.
- the measurement recipe was Alloy LE FP, and the X-ray irradiation time was 60 seconds.
- the Si signal amount increases with the use time of the polishing pad in the same manner as LPD. From this, it can be seen that the Si signal amount and LPD have a correlation. Therefore, the life of the polishing pad can be evaluated by measuring the amount of polishing residue from the amount of Si signal.
- a threshold value for the Si signal amount may be determined in advance, and it may be determined that the polishing pad has reached its life when the Si signal amount is equal to or greater than the threshold value. For example, when the value of (LPD / reference value) is 0.5 in FIG. 4, the value of the Si signal amount shows about 3500 in any sample (marked with x in FIG. 4). Therefore, if the Si signal amount threshold is set to 3500 and the time when the Si signal amount reaches 3500 is determined as the life of the polishing pad, time and wafer waste can be reduced, and productivity and yield are reduced. Can be suppressed.
- a predetermined usage time of the polishing pad is set as a life in advance based on a measured value of the amount of polishing residue.
- the procedure for determining the usage time for the life of the polishing pad will be specifically described, taking as an example the case of measuring the amount of polishing residue by measuring the amount of Si signal.
- the amount of Si signal is measured a plurality of times from the polishing pad by fluorescent X-ray analysis.
- a first-order approximation expression for the usage time of the polishing pad is obtained from a plurality of measured values of the Si signal.
- the measurement is preferably performed a plurality of times when the usage time of the polishing pad is 5000 min or less.
- the use time of the polishing pad when the value of the obtained first order approximate expression reaches the threshold value is defined as the life of the polishing pad.
- the graph of FIG. 6 shows a straight line represented by a first-order approximate expression obtained from the measured value of the Si signal amount with respect to the usage time of the polishing pad.
- the vertical axis of the graph represents the Si signal amount
- the horizontal axis represents the usage time (min) of the polishing pad.
- the Si signal amount threshold is 3500
- the Si signal amount is measured five times while the use time of the polishing pad is 5000 min or less.
- the vicinity of 20000 min when the value of the first-order approximation formula reaches 3500 which is the threshold value is defined as the life of the polishing pad (point indicated by a in FIG. 6).
- the threshold value of the Si signal amount is set to around 3500 as described above, it is possible to suppress the use time of the polishing pad from exceeding the life due to an error and producing a rejected silicon wafer.
- the polishing can be temporarily interrupted immediately before the polishing pad reaches the life, and polishing that has reached its life Time and wafer waste caused by polishing with a pad can be reduced. As a result, it is possible to more reliably suppress a decrease in productivity and yield.
- the wafer polishing method of the present invention will be described.
- a case where the wafer polishing method of the present invention is applied to double-side polishing of a silicon wafer will be described as an example.
- a plurality of silicon wafers to be polished on both sides are prepared.
- double-side polishing of a plurality of silicon wafers is performed batchwise using the double-side polishing apparatus 1.
- the amount of polishing residue deposited on the polishing pad is measured between polishing batches of silicon wafers, that is, after polishing of the previous batch and before polishing of the next batch.
- a method of measuring the amount of polishing residue a method of detecting a signal containing Si-K ⁇ rays from the fluorescent X-ray spectrum obtained by the above-described fluorescent X-ray analysis method can be used.
- the X-ray fluorescence analysis method a hand-held X-ray fluorescence analyzer that is easy to carry can be used, so that measurement can be performed easily and in a short time with the polishing pad still attached to the surface plate.
- the life of the polishing pad is predicted based on the measured value.
- a procedure for specifically predicting the life of the polishing pad will be described, taking as an example the case where the amount of polishing residue is measured by measuring the amount of Si signal.
- the amount of Si signal is measured a plurality of times from the polishing pad by fluorescent X-ray analysis.
- a first-order approximation expression for the usage time of the polishing pad is obtained from a plurality of measured values of the Si signal amount.
- the measurement is preferably performed a plurality of times when the usage time of the polishing pad is 5000 min or less.
- the usage time of the polishing pad at which the value of the obtained first order approximate expression reaches the threshold value is predicted as the life of the polishing pad.
- the life of the polishing pad is predicted using a first-order approximation expression, it is possible to predict with high accuracy, and it is possible to more reliably suppress the decrease in productivity and yield.
- the polishing pad is replaced when the usage time of the polishing pad reaches the predicted life.
- the life of the polishing pad can be easily predicted. Furthermore, by replacing the polishing pad when the usage time of the polishing pad reaches the predicted life, it is possible to reduce the time and waste of the wafer caused by polishing the wafer with the polishing pad that has reached the end of the life. . As a result, a decrease in productivity and yield can be suppressed.
- the wafer to be polished may be a wafer such as a SiC wafer or a compound semiconductor wafer in addition to the silicon wafer.
- the polishing method is not limited to double-side polishing, and the present invention can also be applied to single-side polishing.
- Example 1 The life of the polishing pad was evaluated according to the polishing pad evaluation method of the present invention.
- the polishing pad is a foamed polyurethane pad (LP-57 manufactured by JH RHODES), the slurry is KOH alkali-based colloidal silica (GLANZOX2100 manufactured by Fujimi), the carrier that holds the silicon wafer is titanium, and the insert is aramid Resin was used.
- FIG. 7 shows a straight line representing the first order approximate expression obtained in the first embodiment.
- the silicon wafer after double-side polishing was washed and dried, and the LPD of the surface was measured with Surfscan SP1 manufactured by KLA-Tencor. At this time, the set particle diameter was 0.2 ⁇ m or more, and the edge exclusion region was 3 mm.
- the polishing pad usage time (conventional value) when the measured LPD exceeded the wafer pass / fail reference value was compared with the predicted life value, and the accuracy of the predicted life value was investigated. In Example 1, the above steps were performed 5 times (Measurement 1-5 in Table 1). The results are shown in Table 1. As shown in Table 1, when the predicted life value is compared with the conventional value, it can be seen that the life can be predicted within a standard error of 7%.
- the life of the polishing pad can be predicted with high accuracy, and reduction in productivity and yield can be suppressed.
- productivity and yield reduction can be suppressed even if the wafer is polished.
- Example 2 The life of the polishing pad was evaluated under the same conditions as in Example 1. Furthermore, the life of the polishing pad was evaluated under the same conditions as in Example 1. However, in Example 2, the LPD on the surface of the polished wafer was not measured, and only the Si signal amount of the polishing pad was measured periodically. Then, polishing was interrupted when the measured value of the Si signal amount exceeded 3500. As a result, it was possible to suppress the generation of rejected wafers by performing double-side polishing of silicon wafers with polishing pads that had already reached the end of their lives. Therefore, it was possible to suppress a decrease in productivity and yield compared to a comparative example described later.
- Table 1 summarizes the results of the examples and comparative examples.
- the present invention is not limited to the above embodiment.
- the above-described embodiment is an exemplification, and the present invention has any configuration that has substantially the same configuration as the technical idea described in the claims of the present invention and that exhibits the same effects. Are included in the technical scope.
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Abstract
Description
(LPD/基準値)の値が1を超えたときにウェーハは不合格となり、研磨パッドはライフを迎えたと判断する。
このようにすれば、シリコンウェーハを研磨する場合に、蛍光X線分析法によって研磨パッド上のSi元素の量を調べることで、より簡単に研磨残渣の量を測定することができる。
このように、研磨パッドのライフとする使用時間を決めておくことで、研磨パッドの使用時間が予測値に到達した時点で、研磨を一旦中断でき、ライフを迎えた研磨パッドで研磨してしまうことで生じる時間やウェーハの無駄をより確実に減らすことができる。その結果、生産性及び歩留まりの低下をより確実に抑制することができる。
このようにすれば、シリコンウェーハを研磨する場合に、蛍光X線分析法によって研磨パッド上のSi元素の量を調べることで、簡単に研磨残渣の量を測定することができる。
このように研磨パッドのライフを予測すれば、無駄な時間や不合格品のウェーハをより確実に減らし、生産性及び歩留まりの低下をより確実に抑えることができる。
上記したように、研磨パッドのライフはバラツキが大きくて予測することは難しく、研磨後のウェーハの品質項目から間接的に研磨パッドのライフを調べていたため、研磨パッドがライフを迎えた後にしか、研磨パッドのライフが分からないという問題があった。
まず、研磨対象の複数のシリコンウェーハを準備する(図1のA)。次に、シリコンウェーハを両面研磨する両面研磨装置を用意する。このとき使用する両面研磨装置について図2、3を参照して以下説明する。
シリコンウェーハWを両面研磨した場合、研磨パッド4上に堆積した研磨残渣にはSi元素が含まれているので、蛍光X線スペクトルのSi-Kα線を含む信号を検出すれば、研磨残渣の量を測定することができる。より具体的には、検出した蛍光X線スペクトルからSi-Kα線を含む1.6-1.9eVの範囲の信号量を積分して得られる値を研磨残渣の量の目安値として使用することができる(以下、この研磨残渣の量の目安値をSi信号量と呼ぶ)。測定の前には乾いた布などで、研磨パッド表面の水気を拭き取ることが望ましい。
図4は、図8に示したLPDの測定と同時にSi信号量を測定し、Si信号量の測定結果を合わせて表示したグラフである。Si信号量の測定には、堀場製作所製のMESA-630を用いた。測定レシピはAlloy LE FPで、X線照射時間は60秒とした。両面研磨装置の下定盤に貼られた研磨パッドのSi信号量を測定し、測定箇所は研磨パッドの内周円と外周円から等距離にある円上の3点とし(図5の矢印で示した箇所)、3点のSi信号量の測定値の平均値を図4にプロットした。
まず、蛍光X線分析法で研磨パッドからSi信号量を複数回測定する。そして、複数のSi信号量の測定値から、研磨パッドの使用時間に対する一次近似式を求める。測定は、研磨パッドの使用時間が5000min以下である時に複数回行うことが好ましい。更に、一次近似式による予測の精度を考慮すると5回以上測定を行うことが好ましい。そして、求めた一次近似式の値が閾値に到達する研磨パッドの使用時間を研磨パッドのライフとする。
まず、両面研磨する複数のシリコンウェーハを準備する。次に、両面研磨装置1を用いてバッチ式で複数のシリコンウェーハの両面研磨を行う。このとき、シリコンウェーハの研磨のバッチ間、すなわち、前バッチの研磨終了後、次バッチの研磨前などに、研磨パッド上に堆積した研磨残渣の量を測定する。
まず、蛍光X線分析法で研磨パッドからSi信号量を複数回測定する。そして、複数のSi信号量の測定値から、研磨パッドの使用時間に対する一次近似式を求める。測定は、研磨パッドの使用時間が5000min以下の時に複数回行うことが好ましい。更に、一次近似式による予測の精度を考慮すると5回以上測定を行うことが好ましい。そして、求めた一次近似式の値が閾値に到達する研磨パッドの使用時間を研磨パッドのライフと予測する。このように、一次近似式を用いて研磨パッドのライフと予測すれば精度の良い予測をすることができ、より確実に生産性及び歩留まりの低下を抑制できる。
以上のようなウェーハの研磨方法であれば、研磨パッドのライフを容易に予測することができる。更に、研磨パッドの使用時間が予測したライフに到達した時点で研磨パッドを交換することで、ライフを迎えた研磨パッドでウェーハを研磨してしまうことで生じる時間やウェーハの無駄を減らすことができる。その結果、生産性及び歩留まりの低下を抑制することができる。
本発明の研磨パッドの評価方法に従って研磨パッドのライフを評価した。
実施例1では直径300mmの複数のシリコンウェーハを図2、3のような4ウェイ式の両面研磨装置を用いてバッチ式で両面研磨する場合の研磨パッドを評価対象とした。研磨パッドは発泡ポリウレタンパッド(JH RHODES社製のLP-57)、スラリーはKOHアルカリベースのコロイダルシリカ(フジミ社製のGLANZOX2100)、シリコンウェーハを保持するキャリアは母材がチタンで、インサート材がアラミド樹脂のものを使用した。
実施例1では、以上の工程を、5回(表1の測定1-5)実施した。その結果を表1に示す。
表1のように、ライフの予測値を従来値と比較すると、標準誤差7%以内でライフを予測できていることが分かる。
従って、本発明の研磨パッドの評価方法であれば、精度よく研磨パッドのライフを予測でき、生産性及び歩留まりの低下を抑制できることが確認できた。同様に、本発明のウェーハの研磨方法に従って、ウェーハの研磨をしても生産性及び歩留まりの低下を抑制できることがわかる。
実施例1と同様な条件で研磨パッドのライフを評価した。更に実施例1と同様な条件で研磨パッドのライフを評価した。ただし、実施例2では、研磨後のウェーハの表面のLPDを測定せず、研磨パッドのSi信号量のみ定期的に測定した。そして、Si信号量の測定値が3500を超えた時に研磨を中断した。
その結果、既にライフを迎えた研磨パッドでシリコンウェーハの両面研磨を行うことによる不合格品のウェーハの発生を抑制することができた。そのため、後述する比較例に比べ生産性及び歩留まりの低下を抑制することができた。
研磨残渣を測定しなかったこと以外、実施例1と同様な条件で研磨パッドのライフを評価した。また、実施例1と同様な方法で研磨後のシリコンウェーハの表面のLPDを測定した。
その結果、LPDの測定値が基準値を超えたことが分かったときには、既にライフを迎えた研磨パッドでシリコンウェーハの両面研磨を数バッチ行ってしまい不合格品のウェーハが発生してしまった。そのため、実施例1、2と比較すると生産性及び歩留まりは大幅に低下してしまった。
Claims (6)
- ウェーハを研磨するための研磨パッドのライフを評価する研磨パッドの評価方法であって、
前記研磨パッド上に堆積した研磨残渣の量を測定し、該測定した測定値に基づいて前記研磨パッドのライフを評価することを特徴とする研磨パッドの評価方法。 - 前記研磨残渣の量は、蛍光X線分析法によって得られる蛍光X線スペクトルからSi-Kα線を含む信号を検出することで測定することを特徴とする請求項1に記載の研磨パッドの評価方法。
- 前記研磨パッドの使用時間に対する前記研磨残渣の量の測定値から一次近似式を求め、該一次近似式の値が、予め設定した閾値に到達する前記使用時間を前記研磨パッドのライフとすることを特徴とする請求項1又は請求項2に記載の研磨パッドの評価方法。
- ウェーハを研磨パッドに摺接させることで複数の前記ウェーハを研磨するウェーハの研磨方法であって、
研磨前に前記研磨パッド上に堆積した研磨残渣の量を測定し、該測定した測定値に基づいて前記研磨パッドのライフを予測し、前記研磨パッドの使用時間が予測したライフに到達した時点で前記研磨パッドを交換することを特徴とするウェーハの研磨方法。 - 前記研磨残渣の量は、蛍光X線分析法によって得られる蛍光X線スペクトルからSi-Kα線を含む信号を検出することで測定することを特徴とする請求項4に記載のウェーハの研磨方法。
- 前記研磨パッドの使用時間に対する前記研磨残渣の量の測定値から一次近似式を求め、該一次近似式の値が、予め設定した閾値に到達する前記使用時間を前記研磨パッドのライフと予測することを特徴とする請求項4又は請求項5に記載のウェーハの研磨方法。
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