WO2015032181A1 - 对基板进行烤焙处理的装置及方法 - Google Patents

对基板进行烤焙处理的装置及方法 Download PDF

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Publication number
WO2015032181A1
WO2015032181A1 PCT/CN2014/071028 CN2014071028W WO2015032181A1 WO 2015032181 A1 WO2015032181 A1 WO 2015032181A1 CN 2014071028 W CN2014071028 W CN 2014071028W WO 2015032181 A1 WO2015032181 A1 WO 2015032181A1
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Prior art keywords
substrate
processed
baking
heating
support member
Prior art date
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Ceased
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PCT/CN2014/071028
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English (en)
French (fr)
Inventor
孙世英
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Application filed by Shenzhen China Star Optoelectronics Technology Co Ltd filed Critical Shenzhen China Star Optoelectronics Technology Co Ltd
Priority to US14/240,331 priority Critical patent/US9809491B2/en
Publication of WO2015032181A1 publication Critical patent/WO2015032181A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7612—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by lifting arrangements, e.g. lift pins
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B29/00—Reheating glass products for softening or fusing their surfaces; Fire-polishing; Fusing of margins
    • C03B29/02—Reheating glass products for softening or fusing their surfaces; Fire-polishing; Fusing of margins in a discontinuous way
    • C03B29/025—Glass sheets
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B35/00—Transporting of glass products during their manufacture, e.g. hot glass lenses, prisms
    • C03B35/14—Transporting hot glass sheets or ribbons, e.g. by heat-resistant conveyor belts or bands
    • C03B35/22—Transporting hot glass sheets or ribbons, e.g. by heat-resistant conveyor belts or bands on a fluid support bed, e.g. on molten metal
    • C03B35/24—Transporting hot glass sheets or ribbons, e.g. by heat-resistant conveyor belts or bands on a fluid support bed, e.g. on molten metal on a gas support bed
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0387—Polyamides or polyimides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P40/00—Technologies relating to the processing of minerals
    • Y02P40/50—Glass production, e.g. reusing waste heat during processing or shaping
    • Y02P40/57—Improving the yield, e-g- reduction of reject rates

Definitions

  • the present invention relates to the field of liquid crystal display technologies, and in particular, to an apparatus and method for baking a glass substrate of a liquid crystal display, in particular, for improving the uneven heating of a glass substrate in a high temperature furnace.
  • the PI CPolyimide (Polyimide) liquid on the glass substrate needs to be prebaked (Prebake).
  • the baking method is generally to irradiate the glass substrate with a red ray, and the glass substrate is heated to a certain temperature to evaporate the solvent in the P1 liquid to increase the concentration of PI.
  • a thimble or a support pin is generally used to support the glass substrate, but since the material of the thimble or the support pin is not completely thermally insulated, the non-contact area with the thimble or the support pin on the glass substrate is contacted.
  • the prior art apparatus for baking a glass substrate includes a heating plate (Hot Plate) and a thimble (Tift Pin) T, and the heating substrate has a hole for the thimble 2' to pass through.
  • the thimble 2 passes through the heating substrate and supports the glass substrate 3' to be heated.
  • the prior art has the following drawbacks: Referring to FIG.
  • a technical problem to be solved by the present invention is to provide a device for baking a glass substrate, which can make the substrate more uniformly heated to improve the yield of the substrate.
  • the technical solution of the present invention is to provide an apparatus for baking a glass substrate having the following structure, comprising: heating a substrate; and a support member for supporting the substrate to be processed, the support member being located on the heating substrate and waiting The substrates are machined, and the support member is movable relative to the heating substrate to adjust the position of contact with the substrate to be processed.
  • the apparatus for baking a substrate of the present invention has the following advantages as compared with the prior art. Since the support member for supporting the substrate to be processed (for example, the glass substrate to be heated) in the present invention can be moved relative to the heating substrate, the support member can be adjusted according to the specific structure of the substrate to be processed or the workpiece to be heated (for example, the glass substrate). The contact position of the processed substrate.
  • the support member for supporting the substrate to be processed for example, the glass substrate to be heated
  • the support member to the non-display area of the substrate to be processed, such as the edge area of the substrate to be processed and/or the space between the display areas, ⁇ to avoid damage to the workpiece and avoiding the support being placed in the display area
  • the heating condition of the display area of the substrate to be processed in the prior art is improved, and the spot defects are reduced or avoided. Since it is not necessary to provide a thimble through hole on the heating substrate, the substrate is more uniformly heated to avoid the formation of pin spots, thereby achieving the purpose of improving the yield of the substrate.
  • the support member includes a plurality of elongated base portions, each of the elongated base portions being arranged at a plurality of intervals toward one side of the heating substrate.
  • a thimble for supporting a substrate to be processed.
  • the plurality of elongated bases are movable forward and backward relative to the substrate to be processed (such as a glass substrate) to find an optimum contact position of the thimble with the substrate to be processed (such as a glass substrate).
  • the width of the elongated base portion is not larger than the width of the space between the two rows of display regions divided by the substrate to be processed.
  • the elongated base does not block the heating of the display area of the substrate to be processed (e.g., glass substrate), thereby making the substrate to be processed (e.g., glass substrate) more uniformly heated.
  • the length of the elongated base portion is greater than the length of the substrate to be processed. It facilitates the movement of the elongated base.
  • the support member includes a base portion formed by a single plate, and the base portion is provided with a plurality of spaced-apart intervals toward one side of the heating substrate for supporting The thimble of the substrate is processed.
  • the base formed by a single plate is convenient to move, so that the optimum contact position of the thimble with the substrate to be processed (such as a glass substrate) is found by moving the base.
  • Still another preferred embodiment of the apparatus for baking a substrate of the present invention is that the length and width of the base are not less than the length and width of the heating substrate.
  • the base formed by the one plate is located between the heating substrate and the substrate to be processed (such as a glass substrate).
  • the substrate to be processed such as a glass substrate
  • the substrate to be processed is prevented from being unevenly heated.
  • Another technical problem to be solved by the present invention is to provide a method of baking a glass substrate which allows the substrate to be heated more uniformly.
  • the technical solution of the present invention is to provide a method for baking a substrate by using the apparatus for baking a substrate of the present invention, comprising the steps of: placing both ends of the support member at For baking in the oven to be processed, and supported by the supporting mechanisms on both sides of the oven; fixing the substrate to be processed in the oven;
  • the substrate to be processed is heated by heating the substrate.
  • the method supports the non-display area of the substrate to be processed by moving the support member, thereby avoiding the uneven heating phenomenon of the display area caused by the support member supporting the display area of the substrate to be processed (such as the glass substrate) during heating, and improving
  • the heat-receiving condition of the display area makes the substrate to be processed (such as a glass substrate), especially the display area, more uniformly heated.
  • the non-display area means an area on a substrate to be processed other than the display area.
  • the non-display area includes a spacer and a z or rim.
  • the non-display area is the optimum contact position between the thimble and the substrate to be processed (such as a glass substrate), and the optimum contact area is selected according to the different shapes of the substrate to be processed (such as a glass substrate).
  • the temperature in the oven is 120: to 24 (TC.
  • TC temperature
  • the selection is appropriate. Heating temperature. Satin illustration
  • Fig. 1 is a schematic view showing the structure of an apparatus for baking a substrate of the present invention.
  • FIG. 2 is a top plan view showing an embodiment of FIG. 1.
  • FIG. 3 is a top plan view showing another embodiment of FIG. 1.
  • FIG. 4 is a schematic view showing the structure of a prior art apparatus for baking a substrate.
  • Figure 5 is a top plan view of an embodiment of Figure 4.
  • Fig. 6 is a schematic view showing the heat state of the glass substrate of Fig. 4.
  • Figure 3 1, heating the substrate, 2, support, 2, 1, base, 2, 2, thimble, 3, substrate to be processed, 3.1, display area, 3.2, spacer, 3.3, edge area.
  • Figure 4 to Figure 6 ⁇ , heating the substrate, 2 thimbles, 3', glass substrate, 3. ⁇ , display area.
  • FIG. 1 is a schematic structural view of an apparatus for baking a substrate according to the present invention.
  • the device includes - heating the substrate 1 ;
  • the support member 2 On the support member 2 supporting the substrate 3 to be processed, the support member 2 is located between the heating substrate i and the substrate 3 to be processed, and the support member 2 is movable relative to the heating substrate 1 to adjust the contact with the substrate 3 to be processed. position.
  • the substrate to be processed 3 is a glass substrate, but the present invention is not limited to a glass substrate, and the substrate to be processed 3 includes all substrates to be processed which can be used for a liquid crystal display.
  • the glass substrate to be heated is divided into 12 display areas 3.1, and the 12 display areas 3J are divided into four rows and two columns.
  • the support member 2 includes five elongated base portions 2 that are movable forward and backward, left and right, and each of the elongated base portions 2.1 is disposed on a side of the heating substrate i at a plurality of intervals for supporting the substrate to be processed.
  • 3 thimble 2.2 wherein, two elongated bases 2.1 with thimbles 2.2 are located in the rim region 3.3 on the front and rear sides, and the other three elongated bases 2.1 with thimbles 2.2 are placed in the space between the display regions 3.1 of adjacent rows. 3, 2.
  • Movable support includes Four elongated bases 2.1, each of which has a plurality of ejector pins 2, 2, which are respectively placed on the front and rear side edges of the glass substrate 3.3 and adjacent rows.
  • the space between the zones 3.i is 3.2.
  • the width of the elongated base portion 2.1 is not greater than the width of the spacers 3, 2 between the two rows of display areas 3.1 divided by the substrate 3 to be processed. That is, as shown in Figs. 2 and 3, it is preferable that the base portion: II has a width smaller than the width of the space portion 3.2 between the display regions of the adjacent rows.
  • the width refers to the upper and lower positions of the illustration. The front and back are also referred to as the width direction.
  • the length of the elongated base portion 2.1 is greater than the length of the substrate 3 to be processed.
  • the support member 2 comprises a base portion 2.1 formed by a single plate, and the base portion 2.1 is provided with a plurality of spaced-arranged faces on the side of the heating substrate 1 to support the substrate 3 to be processed.
  • Thimble 2.2 is
  • the length and width of the base portion 2.1 are not less than the length and width of the heating substrate 1.
  • the invention also discloses a method for baking a substrate, the apparatus for baking the substrate of the invention, comprising the step of placing the two ends of the support member 2 in the oven for baking the substrate 3 to be processed Inside, and supporting the supporting mechanism on both sides of the oven; fixing the substrate 3 to be processed in the oven;
  • the substrate 3 to be processed is heated by heating the substrate 1.
  • the non-display area refers to an area on the substrate 3 to be processed other than the display area 3.1.
  • the non-display area includes a spacer 3.2 and/or an edge region 3.3.
  • the temperature in the oven is 120 ⁇ to 240 ⁇ .

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  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Re-Forming, After-Treatment, Cutting And Transporting Of Glass Products (AREA)
  • Liquid Crystal (AREA)

Abstract

一种对基板进行烤焙处理的装置及方法，该装置包括：加热基板（1）；和用于支撑待加工基板（3）的支撑件（2），所述支撑件（2）位于加热基板（1）和待加工基板（3）之间，且所述支撑件（2）相对于加热基板（1）可移动从而调整与待加工基板（3）的接触位置。该装置能使基板受热更均匀从而提高基板的合格率。

Description

对基板进行烤焙处理的装霞方法
技术领域
本发明涉及液晶显示器技术领域，具体涉及一种对液晶显示器的玻璃基板进行烤焙处理的 装置及方法， 尤其是用于改善高温炉内玻璃基板受热不均的问题。
液晶基板的生产制造过程中需要对玻璃基板上的 PI CPolyimide, 聚酷亚胺）液进行预烤焙 (Prebake) 。 烤焙的方式一般是采用红夕卜线辐射玻璃基板， 将玻璃基板加热到一定温度， 使 P1 液中的溶剂蒸发， 提高 PI 的浓度。 在上述烤焙的过程中， 一般会使用顶针或支撑针来支撑 玻璃基板，但是由于顶针或支撑针的材质不是完全绝热的， 因此与玻璃基板上与顶针或支撑针 接触的区域跟非接触区域（玻璃基板上没有与顶针或支撑针接触的区域）相比， 存在导热速率 的差别， 丛而使得玻璃基板受热不均， 造成玻璃基板上出现斑点 （Mura) 缺陷， 降低了玻璃 基板的合格率。
如图 4〜图 6所示， 为一种现有技术的对基板进行烤焙处理的装置。参照图 4和图 5, 现有技 术的对玻璃基板进行烤焙处理的装置包括加热基板（Hot Plate) Γ和顶针 （Lift Pin) T , 加热 基板 Γ上开有用于顶针 2'穿出的孔， 顶针 2，经该孔穿过加热基板 Γ并支撑待加热的玻璃基板 3'。 该现有技术存在以下缺陷： 参照图 6， 在加热时， 热气流 （Hot Air) 经顶针穿出孔喷至显示区 (Chip AA 区） 3, Γ的背面， 使得对应顶针穿出孔的显示区处（对应玻璃基板 3'上的楠圆区域） 与其它区域之间存在温差或受热不均匀。参照图 5, 而造成玻璃基板 3'的显示区 3.Γ上出现销 斑点 （Pin Mura) 缺陷， 所述销斑点 （Pin Mura) 缺陷与顶针 2，在玻璃基板 3'上的支撑位置相 对应， 影响了玻璃基板的质量和合格率。 发明内容
本发明所要解决的一个技术问题是，提供一种对玻璃基板进行烤焙处理的装置， 该装置能 使基板受热更均勾从而提高基板的合格率。
本发明的技术解决方案是，提供一种具有以下结构的对玻璃基板进行烤焙处理的装置，包 括：加热基板；和用于支撑待加工基板的支撑件，所述支撑件位于加热基板和待加工基板之间， 且所述支撑件相对于加热基板可移动从而调整与待加工基板的接触位置。
与现有技术相比，本发明的对基板进行烤焙处理的装置具有以下优点。 由于本发明中用于 支撑待加工基板（例如待加热的玻璃基板）支撑件可相对加热基板移动， 从而可根据待加工基 板或待加热工件（例如玻璃基板）的具体结构来调整支撑件与待加工基板的接触位置。尤其是 将支撑件调节待加工基板的非显示区， 如待加工基板的边沿区和 /或显示区之间的间隔区， }λ 而避免对所述工件的损坏以及避免由于支撑件顶在显示区而造成的受热不均匀的情况，达到改 善现有技术中的待加工基板的显示区受热状况， 减少或避免斑点缺陷。而 由于不需要在加 热基板上设置顶针通孔， 使得基板受热更均勾， 避免销斑点的形成， 从而达到提高基板的合格 率的目的。
作为本发明的对基板进行烤焙处理的装置的一种改进， 所述支撑件包括多个长条状的基 部，每个所述长条状的基部朝向加热基板的一面设有多个间隔排列的、用于支撑待加工基板的 顶针。 所述多个长条状的基部可相对待加工基板（如玻璃基板）前后左右移动， 从而找到顶针 与待加工基板 （如玻璃基板） 的最佳接触位置。
作为本发明的对基板进行烤焙处理的装置的一种优选，所述长条状的基部的宽度不大于待 加工基板分割出的两排显示区之间的间隔区的宽度。长条状的基部不会阻挡加热基板对待加工 基板 （如玻璃基板） 显示区的加热， 从而使得待加工基板 （如玻璃基板） 受热更均匀。
作为本发明的对基板进行烤焙处理的装置的另一种优选，所述长条状的基部的长度大于待 加工基板的长度。 方便长条状的基部的移动。
作为本发明的对基板进行烤焙处理的装置的另一种改进，所述支撑件包括一整块板构成的 基部， 所述基部朝向加热基板的一面设有多个间隔排列、用于支撑待加工基板的顶针。 一整块 板构成的基部在移动时比较方便，从而通过移动基部来寻找到顶针与待加工基板（如玻璃基板) 的最佳接触位置。
作为本发明的对基板进行烤焙处理的装置的还有一种优选，所述基部的长度和宽度均不小 于加热基板的长度和宽度。所述一整块板构成的基部位于加热基板与对待加工基板（如玻璃基 板）之间， 当基部的长度和宽度均不小于加热基板的长度和宽度时， 加热时待加工基板（如玻 璃基板）受到基部的影响是均衡的， 而避免待加工基板（如玻璃基板）受热不均勾的状况出 现。
本发明所要解决的另一个技术问题是，提供一种能使基板受热更均匀的对玻璃基板进行烤 焙处理的方法。
针对该技术问题， 本发明的技术解决方案是， 提供一种对基板进行烤焙处理的方法， 该方 法采用本发明的对基板进行烤焙处理的装置， 包括步骤- 将支撑件两端放置在用于烤焙待加工基板的烤炉内， 并由烤炉两侧的支撑机构支撑； 将待加工基板固定在烤炉内；
移动支撑件使其支撑在待加工基板的非显示区；
通过加热基板对待加工基板进行加热。
该方法通过移动支撑件使其支撑在待加工基板的非显示区，从而避免在加热时因支撑件支 撑在待加工基板（如玻璃基板）的显示区而造成显示区的受热不均匀现象， 改善显示区的受热 状况， 使得待加工基板 （如玻璃基板） 尤其是显示区的受热更均匀。 作为本发明的对基板进行烤焙处理的方法的一种优选，所述非显示区是指除显示区以外的 待加工基板上的区域。
作为本发明的对基板进行烤焙处理的方法的另一种优选， 所述非显示区包括间隔区和 z或 边沿区。 非显示区即顶针与待加工基板（如玻璃基板） 的最佳接触位置， 根据待加工基板（如 玻璃基板） 的不同形状选择最佳接触区域。
作为本发明的对基板进行烤焙处理的方法的还有一种优选， 所述烤炉内的温度为 120 ：〜 24(TC。 根据不同材质或属性的待加工基板 （如玻璃基板） ， 选择合适的加热温度。 緞图说明
图 1所示是本发明的对基板进行烤焙处理的装置的结构示意图。
图 2所示是图 1中的一种实施例的俯视结构示意图。
图 3所示是图 1中的另一种实施例的俯视结构示意图。
图 4所示是一种现有技术的对基板进行烤焙处理的装置的结构示意图。
图 5所示是图 4的一种实施例的俯视结构示意图。
图 6所示是图 4中的玻璃基板受热状况的示意图。
图】〜图 3中： 1、 加热基板， 2、 支撑件， 2, 1、 基部， 2,2、 顶针， 3、 待加工基板， 3.1、 显示区， 3.2、 间隔区， 3.3、 边沿区。
图 4〜图 6中： Γ、 加热基板， 2 顶针， 3'、 玻璃基板， 3. Γ , 显示区。 具体实肺式
下面结合附图和具体实施倒对本发明作进一歩说明。
如图 1所示为本发明的对基板进行烤焙处理的装置的结构示意图。 该装置包括- 加热基板 1 ; 和
于支撑待加工基板 3的支撑件 2, 所述支撑件 2位于加热基板 i和待加工基板 3之间， 且所述支撑件 2相对于加热基板 1可移动从而调整与待加工基板 3的接触位置。
在本发明的的具体实施例中， 所述待加工基板 3为玻璃基板， 但本发明不限于玻璃基板， 待加工基板 3包括所有可用于液晶显示器的待加工基板。
在图 2和图 3中， 分别显示了两种具体实施例。
如图 2所示， 所述待加热的玻璃基板分为 12个显示区 3.1 , 所述 12个显示区 3J分为四 排和两列。 所述支撑件 2包括五个可前后左右移动的长条状的基部 2丄 每个所述长条状的基 部 2.1朝向加热基板 i的一面设有多个间隔排列的、 用于支撑待加工基板 3的顶针 2.2。 其中， 两个带有顶针 2.2的长条状基部 2.1位于前后侧的边沿区 3.3 , 另外的三个带有顶针 2.2的长条 状基部 2.1顶在相邻排的显示区 3.1之间的间隔区 3,2。
如图 3所示， 所述玻璃基板分为 6个显示区 3, 1 , 呈 排两列分布。 可移动的支撑件包括 四个长条状的基部 2.1 , 每个长条状的基部 2.1上均设有若千个顶针 2,2 , 所述顶针 2.2分别顶 在玻璃基板的前后侧的边沿区 3.3和相邻排的显示区 3.i之间的间隔区 3.2。
优选地， 所述长条状的基部 2.1的宽度不大于待加工基板 3分割出的两排显示区 3.1之间 的间隔区 3,2的宽度。 也就是说， 如图 2和图 3所示， 优选为基部: II的宽度小于相邻排的显 示区: 之间的间隔区 3.2的宽度。 在图 2和图 3中， 所述宽度指图示的上下位置。 所述的前 后也指的是宽度方向。
优选地， 所述长条状的基部 2.1的长度大于待加工基板 3的长度。
在一个未示出的实施倒中， 所述支撑件 2包括一整块板构成的基部 2.1 , 所述基部 2.1朝 向加热基板 1的一面设有多个间隔排列、 ffl于支撑待加工基板 3的顶针 2.2。
优选地， 所述基部 2.1的长度和宽度均不小于加热基板 1的长度和宽度。
本发明还公开了一种对基板进行烤焙处理的方法，采用本发明的对基板进行烤焙处理的装 置， 包括歩骤- 将支撑件 2两端放置在 于烤焙待加工基板 3的烤炉内， 并 ώ烤炉两侧的支撑机构支撑； 将待加工基板 3固定在烤炉内；
移动支撑件 2使其支撑在待加工基板 3的非显示区；
通过加热基板 1对待加工基板 3进行加热。
所述非显示区是指除显示区 3.1以外的待加工基板 3上的区域。
所述非显示区包括间隔区 3.2和 /或边沿区 3.3。
所述烤炉内的温度为 120Ό〜240'Ό。
虽然己经结合具体实施例对本发明进行了描述，然而可以理解， 在不脱离本发明的范围的 情况下， 可以对其进行各种改进或替换。 尤其是， 只要不存在结构上的 突， 各实施例中的特 征均可相互结合起来，所形成的组合式特征仍属于本发明的范围内。本发明并不局限于文中公 开的特定实施例， 而是包括落入权利要求的范围内的所有技术方案。

Claims

权利要求书
1 , 一种对基板迸行烤焙处理的装置， 包括；
加热基板 (）； 和
用于支撑待加工基板 (3)的支撑件 (2), 所述支撑件 (2)位于加热基板 (1)和待加工基板 (3)之 间， 且所述支撑件 (2)相对于加热基板 (1)可移动从而调整与待加工基板 (3)的接触位置。
2, 根据权利要求 1所述的对基板进行烤焙处理的装置， 其中， 所述支撑件 (2)包括多个长 条状的基部 (2.1), 每个所述长条状的基部 (2.1)朝向加热基板 (1)的一面设有多个间隔排列的、 m 于支撑待加工基板 的顶针 (2.2)。
3 , 根据权利要求 2所述的对基板进行烤焙处理的装置， 其中， 所述长条状的基部 (2.1)的 宽度不大于待加工基板 (3)分割出的两排显示区 (3.1)之间的间隔区 (3.2)的宽度。
4, 根据杈利要求 3所述的对基板进行烤焙处理的装置， 其中， 所述长条状的基部 (2.1)的 长度大于待加工基板 (3)的长度。
5 , 根据权利要求 1所述的对基板进行烤焙处理的装置， 其中， 所述支撑件 (2)包括一整块 板构成的基部 (2,1), 所述基部 (2,1)朝向加热基板 (1)的一面设有多个间隔排列、 ]¾于支撑待加工 基板 (3)的顶针 (2.2)。
6, 根据权利要求 5所述的对基板进行烤焙处理的装置， 其中， 所述基部 (2.1)的长度和宽 度均不小于加热基板 (T)的长度和宽度。
7, 一种对基板进行烤焙处理的方法， 其中， 采用对基板进行烤焙处理的装置， 该装置包 括加热基板 (1)和用于支撑待加工基板 (3)的支撑件 (2),所述支撑件 位于加热基板 (1)和待加工 基板 (3)之间， 且所述支撑件 (2)相对于加热基板 (1)可移动 A而调整与待加工基板 (3)的接触位 置； 该方法包括以下步骤：
将支撑件 (2)两端放置在用于烤焙待加工基板 (3)的烤炉内， 并 ώ烤炉两侧的支撑机构支撑； 将待加工基板 (3)固定在烤炉内；
移动支撑件 (2)使其支撑在待加工基板 (3)的非显示区；
通过加热基板 )对待加工基板 (3)迸行加热。
8, 根据权利要求 7所述的对基板进行烤焙处理的方法， 其中， 所述非显示区是指除显示 区 (3.1)以外的待加工基板 (3)上的区域。
9, 根据权利要求 8所述的对基板进行烤焙处理的方法， 其中， 所述非显示区包括间隔区 (3 ,2)和 /或边沿区 (3.3)。
10, 根据权利要求 7 所述的对基板进行烤焙处理的方法， 其中， 所述烤炉内的温度为 120°C〜240°C。
1 1 , 一种对基板进行烤焙处理的方法， 其中， 采用对基板进行烤焙处理的装置， 该装置包 括加热基板 (1)和用于支撑待加工基板 (3)的支撑件 (2)，所述支撑件 (2)位于加热基板 (1)和待加工 基板 (3)之间， 且所述支撑件 (2)相对于加热基板 (1)可移动从而调整与待加工基板 (3)的接触位 置； 所述支撑件 (2)包括多个长条状的基部 (2.1)， 每个所述长条状的基部 ι)朝向加热基板 il) 的一面设有多个间隔排列的、 用于支撑待加工基板 的顶针 (2.2); 该方法包括以下歩骤： 将支撑件 (2)两端放置在用于烤焙待加工基板 (3)的烤炉内， 并 ffl烤炉两侧的支撑机构支撑； 将待加工基板 (3)固定在烤炉内；
移动支撑件 (2)使其支撑在待加工基板 (3)的非显示区；
通过加热基板 (1)对待加工基板 (3)进行加热。
12. 根据权利要求 1 所述的对基板进行烤焙处理的方法， 其中， 所述非显示区是指除显 示区 (3.1)以外的待加工基板 (3)上的区域。
13. 根据权利要求 12所述的对基板进行烤焙处理的方法， 其中， 所述非显示区包括间隔 区 (3.2)和 /或边沿区 (3.3) [:
14. 根据权利要求 11 所述的对基板进行烤焙处理的方法， 其中， 所述烤炉内的温度为 120X：〜 24(TC。
PCT/CN2014/071028 2013-09-09 2014-01-21 对基板进行烤焙处理的装置及方法 Ceased WO2015032181A1 (zh)

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CN103466927B (zh) * 2013-09-09 2016-06-08 深圳市华星光电技术有限公司 对基板进行烤焙处理的装置及方法
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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1743964A (zh) * 2004-08-31 2006-03-08 Lg.菲利浦Lcd株式会社 软烘焙基板上的光刻胶的装置和方法
CN202111064U (zh) * 2011-06-07 2012-01-11 京东方科技集团股份有限公司 一种热烘/冷却基板装置
CN102508381A (zh) * 2011-11-29 2012-06-20 深圳市华星光电技术有限公司 一种用于液晶面板的烘烤设备
CN102863147A (zh) * 2012-09-26 2013-01-09 深圳市华星光电技术有限公司 对基板进行烤焙处理的装置及方法
CN103466927A (zh) * 2013-09-09 2013-12-25 深圳市华星光电技术有限公司 对基板进行烤焙处理的装置及方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009111234A (ja) * 2007-10-31 2009-05-21 Tokyo Ohka Kogyo Co Ltd 基板処理方法及び基板処理装置
CN101807538B (zh) * 2010-03-26 2011-09-14 友达光电股份有限公司 基板支撑装置
JP5678177B2 (ja) * 2011-04-13 2015-02-25 シャープ株式会社 基板支持装置、及び乾燥装置
CN102633442B (zh) * 2012-04-19 2015-12-09 深圳市华星光电技术有限公司 温控针支撑基板进行配向膜预干燥的装置及方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1743964A (zh) * 2004-08-31 2006-03-08 Lg.菲利浦Lcd株式会社 软烘焙基板上的光刻胶的装置和方法
CN202111064U (zh) * 2011-06-07 2012-01-11 京东方科技集团股份有限公司 一种热烘/冷却基板装置
CN102508381A (zh) * 2011-11-29 2012-06-20 深圳市华星光电技术有限公司 一种用于液晶面板的烘烤设备
CN102863147A (zh) * 2012-09-26 2013-01-09 深圳市华星光电技术有限公司 对基板进行烤焙处理的装置及方法
CN103466927A (zh) * 2013-09-09 2013-12-25 深圳市华星光电技术有限公司 对基板进行烤焙处理的装置及方法

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