WO2015010714A1 - Appareil et procédé de traitement de substrat de grande surface - Google Patents

Appareil et procédé de traitement de substrat de grande surface Download PDF

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Publication number
WO2015010714A1
WO2015010714A1 PCT/EP2013/065412 EP2013065412W WO2015010714A1 WO 2015010714 A1 WO2015010714 A1 WO 2015010714A1 EP 2013065412 W EP2013065412 W EP 2013065412W WO 2015010714 A1 WO2015010714 A1 WO 2015010714A1
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WO
WIPO (PCT)
Prior art keywords
large area
substrate
area substrate
vertically arranged
substantially vertically
Prior art date
Application number
PCT/EP2013/065412
Other languages
English (en)
Inventor
Anke Hellmich
Frank Schnappenberger
Juergen Schroeder
Original Assignee
Applied Materials, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials, Inc. filed Critical Applied Materials, Inc.
Priority to PCT/EP2013/065412 priority Critical patent/WO2015010714A1/fr
Priority to CN201380078080.6A priority patent/CN105358959A/zh
Priority to TW103125047A priority patent/TW201520539A/zh
Publication of WO2015010714A1 publication Critical patent/WO2015010714A1/fr

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47—Scattering, i.e. diffuse reflection
    • G01N21/4738—Diffuse reflection, e.g. also for testing fluids, fibrous materials
    • G01N21/474—Details of optical heads therefor, e.g. using optical fibres
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/89—Investigating the presence of flaws or contamination in moving material, e.g. running paper or textiles
    • G01N21/892—Investigating the presence of flaws or contamination in moving material, e.g. running paper or textiles characterised by the flaw, defect or object feature examined
    • G01N21/896—Optical defects in or on transparent materials, e.g. distortion, surface flaws in conveyed flat sheet or rod
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/958—Inspecting transparent materials or objects, e.g. windscreens

Definitions

  • Embodiments of the present disclosure relate to processing systems and methods for operation thereof. Particularly, they relate to apparatuses for processing and monitoring large area substrates and methods for measuring properties of large area substrates by optical means.
  • the present disclosure particularly relates to in-line processing apparatuses. Apparatuses of the present disclosure are particularly adapted for processing and measuring vertically arranged large area substrates.
  • layers of different materials are deposited onto each other over a substrate.
  • this is done in a sequence of coating or deposition steps, e.g., sputtering steps.
  • a multi-layer stack with a sequence of "material one"-"material two"-”material one" can be deposited.
  • an in-line arrangement of deposition modules can be used.
  • a typical in-line system includes a number of subsequent processing modules, wherein processing steps are conducted in one chamber after the other such that a plurality of substrates can continuously or quasi-continuously be processed with the in-line system.
  • Processing of large area substrates requires process monitoring and quality inspection to ensure high and reproducible quality of the processed large area substrates. For example, for quality inspection of coatings on large area substrates it is required to determine optical properties of the coated substrate with low cost of ownership. Usually, due economic and space- saving issues large area substrates are processed in a vertically arranged state.
  • One problem associated with measuring properties of a vertically arranged large area substrate is that the large area substrate tends to warp due to gravitational forces acting on the substrate.
  • the present disclosure provides an apparatus for processing a large area substrate that overcomes at least some of the problems in the art.
  • This object is achieved at least to some extent by an apparatus for processing a large area substrate and a method for measuring at least one optical property of a substantially vertically arranged large area substrate according to the independent claims. Further aspects, advantages, and features of the present disclosure are apparent from the dependent claims, the description, and the accompanying drawings.
  • the apparatus for processing a large area substrate includes a chamber arrangement for transporting the large area substrate therethrough in a vertically arranged state.
  • the chamber arrangement includes at least one chamber, a processing device for processing the vertically arranged large area substrate and an exit port for the vertically arranged large area substrate.
  • the apparatus for processing a large area substrate includes a transport system for transporting the vertically arranged large area substrate through the chamber arrangement, and a measuring arrangement comprising at least one optical measuring device, wherein the at least one optical measuring device includes an illuminating device for emitting diffuse light onto the vertically arranged large area substrate, and a first light detecting device for measuring at least one optical property of the vertically arranged large area substrate.
  • an apparatus for processing a large area substrate may be retrofitted with the measuring arrangement as described herein.
  • a method for retrofitting an apparatus for processing a large area substrate is disclosed including providing an apparatus for processing a large area substrate with the measuring arrangement as described herein.
  • a method for measuring at least one optical property of a substantially vertically arranged large area substrate is provided, wherein the method includes: transporting the substantially vertically arranged large area substrate relative to a measuring arrangement in a transport direction; illuminating the substantially vertically arranged large area substrate with diffuse light; measuring the at least one property of the substantially vertically arranged large area substrate.
  • the present disclosure is also directed to an apparatus for carrying out the disclosed methods and including apparatus parts for performing each described method steps. These method steps may be performed by way of hardware components, a computer programmed by appropriate software, by any combination of the two or in any other manner. Furthermore, the disclosure is also directed to methods by which the described apparatus operates. It includes method steps for carrying out every function of the apparatus.
  • Fig. 1 shows a schematic perspective view of an apparatus for processing a large area substrate according to embodiments described herein;
  • Fig. 2 shows a schematic view of an embodiment of a transportation carrier for substrates which may be used in embodiments of an apparatus for processing a large area substrate according to embodiments described herein;
  • Fig. 3 shows a schematic view of a further embodiment of a transportation carrier for substrates which may be used in embodiments of an apparatus for processing a large area substrate according to embodiments described herein;
  • Fig. 4 shows a schematic cross-sectional view of an embodiment of an optical measuring device used in embodiments of an apparatus for processing a large area substrate according to embodiments described herein
  • Fig. 5 shows a schematic cross-sectional view of an embodiment of an optical measuring device according to Fig. 4, wherein the relative position of the substrate is laterally shifted with respect to the optical measuring device compared to the relative position of the substrate to the optical measuring device as shown in Fig. 4;
  • Fig. 6 shows a schematic cross-sectional view of an embodiment of an optical measuring device according to Fig. 4, wherein the orientation of the substrate is tilted compared to the orientation of the substrate as shown in Fig. 4;
  • Fig. 7 shows a schematic cross-sectional view of an embodiment of an optical measuring device used in embodiments of an apparatus for processing a large area substrate according to embodiments described herein
  • Fig. 8 shows a schematic cross-sectional view of an embodiment of a measurement arrangement including a light trap and an optical measuring device used in embodiments of an apparatus for processing a large area substrate according to embodiments described herein;
  • Fig. 9 shows a schematic perspective view of an apparatus for processing a large area substrate according to embodiments described herein.
  • Fig. 10 shows an illustrative embodiment of a method for measuring at least one optical property of a substantially vertically arranged large area substrate according to embodiments described herein.
  • substrate as used herein shall embrace substrates which are typically used for display manufacturing, such as glass or plastic substrates.
  • substrates as described herein shall embrace substrates which are typically used for an LCD (Liquid Crystal Display), a PDP (Plasma Display Panel), and the like.
  • LCD Liquid Crystal Display
  • PDP Plasma Display Panel
  • substrate is to be understood as "large area substrate” as specified herein. According to the present disclosure, large area substrates may have a size of at least 0.174 m 2 .
  • the size can be about 1.4 m 2 to about 8 m 2 , more typically about 2 m 2 to about 9 m 2 or even up to 12 m 2 .
  • the substrates are large area substrates or transport carriers having dimensions of or for large area substrates as described herein.
  • a carrier having a size corresponding to a single substrate being a large area substrate can be GEN 4.5, which corresponds to about 0.67 m substrates (730 x 920 mm), GEN 5, which corresponds to about 1.4 m substrates (1.1 m x 1.3 m), GEN 7.5, which corresponds to about 4.29 m substrates (1.95 m x 2.2 m), GEN 8.5, which corresponds to about 5.7 m 2 substrates (2.2 m x 2.5 m), or even GEN 10, which corresponds to about 8.7 m substrates (2.85 m x 3.05 m). Even larger generations such as GEN 11 and GEN 12 and corresponding substrate areas can similarly be implemented. Yet, the respective carriers of such a size can also be utilized to
  • the substrates are essentially vertically- oriented.
  • a vertically oriented substrate can have some deviation from a vertical, i.e. 90°, orientation in a processing system in order to allow for stable transport with an inclination by a few degrees, e.g. an inclination of 15° or less.
  • an apparatus 100 for processing a large area substrate 120 includes a chamber arrangement 110 for transporting the large area substrate 120 therethrough in a vertically arranged state, wherein the chamber arrangement 110 includes at least one chamber, a processing device (not shown) for processing the vertically arranged large area substrate 120 and an exit port 112 for the vertically arranged large area substrate 120.
  • the apparatus 100 for processing a large area substrate 120 includes a transport system (not shown) for transporting the vertically arranged large area substrate 120 through the chamber arrangement 110, and a measuring arrangement 200 which includes at least one optical measuring device 210.
  • the at least one optical measuring device 210 includes an illuminating device 211 for emitting diffuse light onto the vertically arranged large area substrate 120, and a first light detecting device 212 for measuring at least one optical property of the vertically arranged large area substrate.
  • the illuminating device 211 of the at least one optical measuring device 210 includes an integrating sphere 213 and a light source 214 emitting light into the integrating sphere 213.
  • the light source is configured for emitting light in the visible radiation range of 380-780 nm and/or in the infrared radiation range of 780 nm to 3000 nm and/or in the ultraviolet radiation range of 200 nm to 380 nm.
  • the light source 214 of the illuminating device 211 is arranged such that light can be emitted into the integrating sphere 213.
  • the light source may be arranged within the integrating sphere 213, or attached to an inner wall of the integrating sphere 213.
  • the light source 214 can be arranged outside the integrating sphere, wherein the wall of the integrating sphere includes an opening which is configured such that light emitted from the light source can shine into the interior of the integrating sphere.
  • the light source 214 may be configured as, e.g., a filament bulb, a tungsten halogen bulb, LEDs, high-power LEDs or Xe-Arc-Lamps.
  • the light source 214 may be configured such that the light source can be switched on and off for short times. For the purpose of switching, the light source can be connected to a control unit (not shown).
  • the at least one optical measuring device is positioned on one side of the substrate 120 to be measured, as exemplarily shown in Fig 4.
  • diffuse light emitted from the integrating sphere through the light exit port 216 can be shone onto the substrate for measurement of at least one optical property of the substrate.
  • the light shone onto the substrate is of the same intensity throughout an illuminated portion of the substrate.
  • the emitted diffuse light can be characterized by emitting the light at a plurality of angles, particularly with a uniform angular distribution of the intensity of the light. For example, this can be generated by diffuse reflection in the integrating sphere, e.g. an Ulbricht sphere, where the material in the sphere is selected for providing diffuse reflection.
  • the tolerance of the measurement system with respect to substrate position and substrate warping can be increased. For example, a substrate warping resulting in an angle deviation of +-2°, e.g. +- 1° can be within the tolerances for measurements described herein.
  • a beam of light which is illustrated as a solid line with arrows indicating the direction of the light, may have a position of origin P on the interior surface of the integrating sphere before the beam exits the exit port 216.
  • the beam may be transmitted through the substrate or reflected from the substrate, as exemplarily shown in Fig. 4, and, in case of reflectance, enter the light exit port 216 with an angle of reflectance.
  • the first light detecting device 212 is configured and arranged such that light reflected from the substrate 120, e.g. from the first surface of the substrate 121, can be detected by the first light detecting device 212.
  • An angle between a light beam exiting the integrating sphere 213 through the exit port 216 and the reflected beam entering the exit port 216 may be referred to as angel of beam ⁇ in the present disclosure.
  • the optical measuring device 210 includes a measuring axis 217.
  • the measuring axis 217 is substantially normal to a first surface 121 of the substrate 120.
  • a direction under which a light beam reflected from the substrate is detected by the first light detecting device is referred to as detection direction of the first light detecting device, as exemplarily indicated in Fig.4 by reference number 218.
  • the angle a between the detection direction 218 and the measuring axis 217 is within a range of 2° to 10°, particularly within a range of 2° to 8°, more particularly within a range of 2° to 4°, preferably below 4°.
  • the integrating sphere 213 has an inner diameter of 150 mm or less, particularly of 100 mm or less, more particularly of 75 mm or less. According to embodiments, in providing an illuminating device with a larger integrating sphere, the influence of the size of the light exit port 216 on the illumination quality of the substrate can be compensated, in particular be minimized.
  • the light exit port 216 of the integrating sphere 213 may have a diameter of 25 mm or less, particularly of 15 mm or less, more particularly of 10 mm or less. By increasing the diameter of the exit port, a larger portion of the substrate may be illuminated for conducting a measurement of the at least one optical property of the substrate.
  • the first light detecting device 212 is configured and arranged such that no direct light from the light source 214 is detected by the first light detecting device 212.
  • screening means may be provided within the integrating sphere 213, which prevent light emitted by the light source from directly hitting the first light detecting device 212.
  • Such screening means may, for example, be realized by shields, apertures or lenses, which are configured and arranged such that no direct light emitted by the light source can hit the first light detecting device 212.
  • the first light detecting device 212 is configured and arranged such that no light reflected from the inside of the integrating sphere is detected by the first light detecting device 212.
  • the first light detecting device 212 can be arranged such that only light entering through the light exit port 216 of the integrating sphere 213, e.g. due to reflection on the substrate 120, may be detected by the first light detecting device 212.
  • the measuring arrangement 200 may include at least three optical measurements devices 210 as exemplarily shown in Fig. 1.
  • the at least three optical measurement devices may be arranged at different heights of a substantially vertical line, as exemplarily indicated with reference number 222 in Fig. 1.
  • the at least three optical measurement devices can also be arranged at different heights on different substantially vertically lines, e.g. lines which are parallel to the line indicated with reference number 222 in Fig. 1.
  • multiple measurements of the substrate may be carried out at the same time. Measurements of different measuring devices may be compared to obtain information about the uniformity of the substrate. Thereby, high accuracy measurements at selected positions of the substrate can be achieved. Therefore, characteristics of a processed substrate can be measured and monitored for ensuring high reproducible quality of the processed substrate.
  • the measuring arrangement 200 comprising at least one optical measuring device 210 for measuring at least one optical property of the vertically arranged large area substrate, is provided behind the exit port 112 of the apparatus 100 for processing the large area substrate, as exemplarily shown in Fig. 1.
  • an apparatus for processing a large area substrate may be retrofitted with the measuring arrangement as described herein in a simple way.
  • the apparatus for processing a large area substrate is an in-line processing apparatus.
  • An in-line processing apparatus for processing a large area substrate may include a sequence of chambers, i.e. a chamber arrangement 110 including at least one chamber.
  • the at least one chamber of the chamber arrangement 110 includes chamber walls with openings, wherein the openings are configured for transferring essentially vertically- oriented substrates therethrough.
  • the openings can have the shape of a slit, particularly a vertical slit.
  • the openings of the at least one chamber may include locks which can be opened or closed.
  • the at least one chamber of the chamber arrangement 110 can have a flange for connecting a vacuum system, such as a vacuum pump or the like. Thereby, the at least one chamber can be evacuated.
  • the at least one chamber of the chamber arrangement may be a chamber selected from the group consisting of: a buffer chamber, a heating chamber, a transfer chamber, a cycle-time- adjusting chamber, a deposition chamber, a processing chamber or the like.
  • At least one chamber of the chamber arrangement may be a processing chamber.
  • a "processing chamber” may be understood as a chamber in which a processing device for processing a substrate is arranged.
  • a processing device according to embodiments described herein may be understood as any device used for processing a substrate.
  • the processing device may be a deposition source for depositing a layer onto the substrate.
  • a processing chamber including a deposition source may be referred to as a deposition chamber in the present disclosure.
  • the deposition chamber may be a chemical vapor deposition (CVD) chamber or a physical vapor deposition (PVD) chamber.
  • the processing device being a deposition source is provided as a sputtering target, such as rotatable sputtering target which may be used in a PVD chamber, such as a PVD chamber available from AKT®, a subsidiary of Applied Materials, Inc., Santa Clara, California or a PVD chamber available from Applied Materials Gmbh & Co. KG, located at Alzenau, Germany.
  • the deposition source and/or the processing chamber employed in embodiments of the apparatus as described herein may be a deposition source and/or a processing chamber used in the AKT Aristo PVD System available from AKT®.
  • the sputtering target may have utility in other PVD chambers, including those chambers configured to process large area substrates produced by other manufacturers.
  • the processing device can be configured to provide a DC (direct current) sputtering, a pulse sputtering, or an MF (middle frequency) sputtering.
  • the middle frequency sputtering includes frequencies in the range of 5 kHz to 100 kHz, particularly in the range of 25 kHz to 50 kHz.
  • the apparatus for processing a large area substrate may be adapted for employing sputtering techniques which are typically applied to a thin film deposition process in the course of fabricating a semiconductor, an LCD (Liquid Crystal Display), a PDP (Plasma Display Panel), and the like.
  • the at least one chamber of the chamber arrangement which is configured as a deposition chamber, may be configured for deposition of material selected from the group consisting of: low index materials, such as Si02, MgF, mid index material, such as SiN, A1203, A1N, ITO, IZO, SiOxNy, AlOxNy and high index materials, such as Nb205, Ti02, Ta02, or other high index materials.
  • low index materials such as Si02, MgF
  • mid index material such as SiN, A1203, A1N, ITO, IZO, SiOxNy, AlOxNy
  • high index materials such as Nb205, Ti02, Ta02, or other high index materials.
  • the target material can be selected from the group consisting of: : low index materials, such as Si02, MgF, mid index material, such as SiN , A1203, A1N, ITO, IZO, SiOxNy, AlOxNy and high index materials, such as Nb205, Ti02, Ta02, or other high index materials.
  • low index materials such as Si02, MgF
  • mid index material such as SiN , A1203, A1N, ITO, IZO, SiOxNy, AlOxNy
  • high index materials such as Nb205, Ti02, Ta02, or other high index materials.
  • the target material is typically provided either by the material to be deposited on a substrate or by the material which is supposed to react with a reactive gas in a processing area to then be deposited on the substrate after reacting with a reactive gas.
  • two transport paths may be provided so that a first substrate may overtake a second substrate that is being processed.
  • an apparatuses for processing large area substrates can be provided with which multiple substrates can be processed differently, subsequently or concurrently.
  • a transportation system for moving along the transportation tracks can be provided at the bottom of the essentially vertically arranged substrate.
  • the transportation system may include a transportation carrier for the substrate.
  • the transportation carrier 131 can be configured as a frame structure for supporting the substrate 120, in particular for supporting the substrate in a vertically arranged state.
  • the transportation carrier may be configured having multiple sub-frames for supporting substrates, wherein the sub-frames are encompassed within a base frame.
  • Figs. 2 and 3 show exemplary embodiments of a transportation carrier 131 for substantially vertically arranged substrates 120 including a base frame 132 and multiple sub-frames 133.
  • the sub-frames may differ in size and aspect ratio, wherein the size of the base frames of different transportation carriers essentially depends on the size of the smallest at least one chamber of the chamber arrangement.
  • the sub-frames may be configured for supporting GEN 4.5, GEN 5, GEN 7.5, GEN 8.5, GEN 10, GEN 11, or GEN 12 substrates as specified herein. Further, the sub-frames can also be configured having a smaller size than the sizes of the large area substrate specified herein. According to embodiments, which can be combined with other embodiments described herein, multiple sub frames having different sizes may be arranged within the base frame of the transportation carrier. Thereby, processing of substrates having different sizes at the same time can be achieved.
  • the transport system for vertically arranged substrates may include transportation elements, e.g. rollers, and/or guiding elements for guiding the substrate or the transportation carrier along the transportation path.
  • the guiding elements can be magnetic guiding elements having a recess, e.g., two slits, through which the substrate can be transferred.
  • the guiding elements can also include a bearing for linear movement such that a shift from a first transportation track to a second transportation track can be conducted.
  • the magnetic guiding elements are configured for contactless guiding of the substrate or the transportation carrier along the transportation path.
  • Contactless guiding may involve a lateral tolerance between the guiding element and the substrate or the transportation carrier such that a lateral position of the substrate or the transportation carrier may vary during the transportation within the tolerance provided. Thereby, also warping effects of the substrate may occur.
  • a measuring arrangement as described herein in an apparatus for processing a large area substrate according to the embodiments, a variation of the lateral position or of the substrate with respect to the measuring arrangement does not influence the accuracy of the measurement of the substrate.
  • the measuring arrangement as described herein is capable of compensating warping effects and/or variations of the lateral position or of the substrate with respect to the measuring arrangement.
  • the transportation elements and/or the guiding elements of the transportation system can be arranged on an upper and/or a lower end of the substrate, particularly on an upper and/or a lower end of the transportation carrier for the substrate.
  • the transportation elements can be moved synchronously for lateral transfer of the substrate within or through the chamber arrangement.
  • the guiding elements may also be moved at the same time as the transportation elements.
  • the transportation elements may include drives for driving the transportation elements.
  • the transportation elements may include belt drives for driving the rotation of the transportation elements in order to transport the substrates or carriers provided on the transportation rollers along the transportation paths.
  • one or more of the drives, e.g. the belt drives can be driven by a motor.
  • the apparatus for processing a large area substrate includes an improved utilization of the processing chambers and allows for feeding of the substrates into the processing system in a continuous or quasi-continuous manner.
  • the apparatus for processing a large area substrate includes an entry load-lock chamber for inserting a substrate into the apparatus.
  • the entry load-lock chamber can be configured for changing the interior pressure from atmospheric pressure to vacuum, e.g. to a pressure of 10 mbar or below, or vice versa.
  • the apparatus for processing a large area substrate includes and an exit load- lock chamber for discharging a substrate out of the apparatus.
  • the exit load-lock chamber can be configured for changing the interior pressure from atmospheric pressure to vacuum, e.g. to a pressure of 10 mbar or below, or vice versa.
  • the exit load-lock chamber includes the exit port 112. Hence, after traveling through the chamber arrangement of the apparatus, the substrate may exit the apparatus at the exit port 112, as exemplarily shown in Fig l.
  • the chamber arrangement may include at least one vacuum chamber.
  • the at least one vacuum chamber can be configured for transferring or processing the substrates at a pressure of 10 mbar or below.
  • the entry load-lock chamber can be configured for being evacuated before a vacuum valve between the entry load- lock chamber and an adjacent downstream chamber is opened for further transport of the substrate into the adjacent chamber.
  • the exit load-lock chamber can be configured for being evacuated before a vacuum valve between the exit load-lock chamber and an adjacent upstream chamber is opened for further transport of the substrate into the exit load-lock chamber.
  • an apparatus for processing a large area substrate By providing an apparatus for processing a large area substrate according to embodiments described herein, characteristics of a processed substrate can be measured and monitored for ensuring high reproducible quality of the processed substrate.
  • an apparatus for processing large area substrates is provided with which non- uniformities in the structure or composition of the substrate or coatings on the substrate, for example due processing errors, can be detected.
  • processing errors may be detected at early stages such that the processing can be stopped in order to avoid the production of deficient products. Thereby, the overall process costs can be minimized.
  • the first light detecting device may include the capability to process visible radiation.
  • the first light detecting device may be adapted for processing radiation in the extra-optical range, such as infrared, ultraviolet radiation.
  • the first light detecting device can be an optical sensor that may be adapted to process radiation in the visible radiation range of 380-780 nm and/or in the infrared radiation range of 780 nm to 3000 nm and/or in the ultraviolet radiation range of 200 nm to 380 nm.
  • the first light detecting device may be a photo sensor or a CCD-sensor (charged coupled devices).
  • the first light detecting device can be provided for the acquisition of measurement data as well as for the acquisition of reference data.
  • the first light detecting device can include signal outlet ports which can be connected to a data processing or data analysis unit (not shown in the Figures).
  • the first light detecting device may be connected to a data processing or data analysis unit via a cable or wireless connection.
  • the data processing or data analysis unit can be adapted to inspect and analyze the signals of the first light detecting device. If any characteristic of the substrate is measured which is defined as non-normal, the data processing or data analysis unit may detect the change and trigger a reaction, such as a stop of the processing of the substrate.
  • the at least one optical property of the substrate measured by the first light detecting device of the at least one optical measuring device includes a reflectance from the substrate.
  • Figs. 5 and 6 the influence of warping of the substrate, e.g. due to gravitational forces acting on a vertically arranged substrate, is analyzed.
  • warping may be considered as an overlap of tilting and shifting the substrate relative to the original orientation of the substrate
  • the influence of tilting and shifting the substrate are analyzed separately. Accordingly, with reference to Fig. 5 the influence of shifting the substrate compared to a reference orientation of the substrate as shown in Fig. 4 is analyzed. Further, with reference to Fig. 6 the influence of tilting the substrate compared to the reference orientation of the substrate as shown in Fig. 4 is evaluated.
  • FIG. 5 shows a schematic cross-sectional view of an embodiment of an optical measuring device according to Fig. 4, wherein the relative position of the substrate is laterally shifted with respect to the optical measuring device compared to the relative position of the substrate to the optical measuring device as shown in Fig. 4.
  • a lateral shift of the substrate 120 is indicated by AD.
  • the position of origin P of a light beam which is detected by the first light detecting device after reflection from the substrate 120, appears to have been travelled away from the first light detecting device 212 compared to the position of origin P of the light beam as shown in Fig.4.
  • Fig. 5 shows a schematic cross-sectional view of an embodiment of an optical measuring device according to Fig. 4, wherein the relative position of the substrate is laterally shifted with respect to the optical measuring device compared to the relative position of the substrate to the optical measuring device as shown in Fig. 4.
  • a lateral shift of the substrate 120 is indicated by AD.
  • the position of origin P of a light beam which is detected by the first light detecting
  • the angle of beam ( ⁇ + ⁇ ) increases with increasing distance (D1+ AD) between the light exit port 216 of the integrating sphere 213 and the substrate 120. Accordingly, the size of the light exit port 216 as well as the position and size of the first light detecting device 212 determines the maximum distance between the substrate and the light exit port 216, at which light reflected from the substrate may be detected by the first light detecting device 212. Since for measuring at least one optical property of the substrate, the substrate is illuminated with diffuse light, the light shone onto the substrate is of the same intensity throughout the illuminated portion of the substrate.
  • the accuracy of the measured at least one optical property of the substrate is independent of a distance between the substrate and the measurement arrangement as described herein, in particular at the distance of 30 mm within a tolerance of + 25 mm, particularly within a tolerance of + 20 mm, more particularly within a tolerance of + 15 mm.
  • FIG. 6 shows a schematic cross-sectional view of an embodiment of an optical measuring device according to Fig. 4, wherein the relative position of the substrate is tilted compared to the position of the substrate as shown in Fig. 4.
  • a tilt of the substrate 120 is indicated by ⁇ .
  • the position of origin P of a light beam which is detected by the first light detecting device 212 after reflection from the substrate 120, appears to have been travelled away from the first light detecting device 212 compared to the position of origin P of the light beam as shown in Fig. 4.
  • Fig. 6 shows a schematic cross-sectional view of an embodiment of an optical measuring device according to Fig. 4, wherein the relative position of the substrate is tilted compared to the position of the substrate as shown in Fig. 4.
  • a tilt of the substrate 120 is indicated by ⁇ .
  • the position of origin P of a light beam which is detected by the first light detecting device 212 after reflection from the substrate 120, appears to have been travelled away from the first light detecting device 212 compared
  • the angle of beam ( ⁇ + ⁇ ) may vary depending on the angle of tilt ⁇ of the substrate. Accordingly, the size of the light exit port 216 as well as the position and size of the first light detecting device 212 determines the maximum tilt of the substrate at which light reflected from the substrate may be detected by the first light detecting device 212. Since for measuring at least one optical property of the substrate, the substrate is illuminated with diffuse light, the light shone onto the substrate is of the same intensity throughout the illuminated portion of the substrate. Accordingly, the accuracy of the measured at least one optical property of the substrate is independent of the tilt ⁇ of the substrate.
  • apparatuses for processing a large area substrate as described herein are capable of measuring at least one optical property of the substantially vertically arranged large area substrate.
  • apparatuses for processing a large area substrate according to embodiments described herein are suitable for measuring at least one optical property of the substantially vertically arranged large area moving substrate, in particular of substrates moving at a transportation speed of at least 1 m/min, particularly of at least 20 m/min, more particularly of at least 35 m/min, e.g. 50 m/min.
  • high accuracy measurements of at least one optical property of the substrate can be measured in a distance up to 100 mm from between the substrate and the measuring arrangement and a substrate tilt up to + 2°, e.g. by warping of the large area substrate.
  • the at least one optical measuring device 210 further comprises a second light detecting device 215 for measuring the at least one optical property of the substantially vertically arranged large area substrate.
  • the second light detecting device 215 may be arranged opposite to the illuminating device 211, particularly opposite to the light exit port 216 of the integrating sphere, on another side of the substrate 120 than the illuminating device 211, particularly on the side of the second surface 122 of the substrate 120.
  • the second light detecting device may include the capability to process visible radiation.
  • the second light detecting device may be adapted for processing radiation in the extra-optical range, such as infrared, ultraviolet radiation.
  • the second light detecting device can be an optical sensor that may be adapted to process radiation in the visible radiation range of 380- 780 nm and/or in the infrared radiation range of 780 nm to 3000 nm and/or in the ultraviolet radiation range of 200 nm to 380 nm.
  • the second light detecting device may be a photo sensor or a CCD-sensor (charged coupled devices).
  • the second light detecting device can be provided for the acquisition of measurement data as well as for the acquisition of reference data.
  • the second light detecting device can include signal outlet ports which may be connected to a data processing or data analysis unit (not shown on the Figures).
  • the at least one optical property of the substrate measured by the second light detecting device of the at least one optical measuring device includes a transmission through the substrate.
  • the second light detecting device may be connected to a data processing or data analysis unit via a cable or wireless connection.
  • the data processing or data analysis unit can be adapted to inspect and analyze the signals of the second light detecting device. If any characteristic of the substrate is measured which is defined as non-normal, the data processing or data analysis unit may detect the change and trigger a reaction, such as a stop of the processing of the substrate.
  • a distance Dl between the integrating sphere 213 of the illuminating device 21 and the first surface 121 of the substrate 120 and/or a distance D2 between the second light detecting device 215 and the second surface 122 of the substrate 120, which is on an opposite side of the first surface of the substrate may be kept as small as possible.
  • the distance Dl and the distance D2 are selected such that unobstructed movement of the substrate relative to the illuminating device 211 and/or relative to the at least one optical measuring device 210 in the transport direction is possible.
  • the measuring arrangement 200 further includes at least one light trap 220 which is configured and arranged for capturing light transmitted through the substrate.
  • the at least one light trap 220 is geometrical configured such that all incident light hits an absorber area 221.
  • the light trap may be configured such that an incident light beam having an intensity Io reflects on at least 5 surfaces, before the light is reflected out of the light trap.
  • the absorber area 221 on which light may reflect within the light trap may include black glass which reflects 5% of the incident light.
  • the at least one light trap 220 in particular the arrangement of the absorber area 221, is configured for absorbing all incident light over all measured wavelength, such as wavelength within the visible radiation range of 380-780 nm and/or in the infrared radiation range of 780 nm to 3000 nm and/or in the ultraviolet radiation range of 200 nm to 380 nm.
  • the second light detecting device 215 may be arranged within the at least one light trap 220.
  • a height of the at least one light trap 220 is at least 50 , particularly at least 70 , more particularly at least 85 % of the height of the substantially vertically arranged large area substrate, e.g. the height of the at least one light trap may be of the substantially same height as the vertically arranged large area substrate or the height of the at least one light trap may be of the same height as a transport carrier having dimensions of a large area substrate as described herein.
  • the light trap can be configured static with respect to a moving illuminating device, which may be part of the measuring device as described herein.
  • the light trap is configured and arranged such that light emitted from a moving illuminating device, e.g. an illuminating device moving along a substantially vertical trajectory, can be captured by the light trap over the complete moving trajectory of the illuminating device. Thereby, any reflection from behind the surface from which reflectance is measured can substantially be eliminated.
  • a moving illuminating device e.g. an illuminating device moving along a substantially vertical trajectory
  • reflectance from the substrate can be measured without distortions resulting from parasitic reflections not coming from the surface to be measured.
  • the size of the at least one light trap is adjusted such that providing a single light trap may be sufficient to essentially eliminate parasitic reflection over the height of the substrate at which measurements are carried out.
  • FIG. 9 a schematic perspective view of an apparatus for processing a large area substrate according to an embodiment is shown, which can be combined with other embodiments described herein, in which the measuring arrangement 200 is provided within the chamber arrangement 110, for example, within a vacuum chamber of the chamber arrangement. Further, Fig. 9 exemplarily shows a processing device 230, e.g. a deposition source provided as a sputtering target, according to embodiments described herein.
  • a processing device 230 e.g. a deposition source provided as a sputtering target, according to embodiments described herein.
  • the at least one optical measuring device 210 can be configured movable along a substantially vertical direction with respect to a transport direction of the substantially vertically arranged large area substrate. Thereby, multiple measurements at various positions along a moving axis of the at least one optical measuring device 210, e.g. along the line 222 as indicated in Fig. 1 , may be carried out.
  • the at least one first movable measuring device can be coupled to a rail for supporting a manually operated movement of the at least one optical measuring device may be provided.
  • an actuator for performing a movement of the at least one first movable measuring device along a trajectory may be provided.
  • the actuator may be operated by a source of energy in the form of an electric current, hydraulic fluid pressure or pneumatic pressure converting the energy into motion.
  • the actuator for moving the at least one optical measuring device can be an electrical motor, a linear motor, a pneumatic actuator, a hydraulic actuator or a piezoelectric actuator.
  • Fig. 10 an illustrative embodiment of a method for measuring at least one optical property of a substantially vertically arranged large area substrate according to embodiments described herein is illustrated.
  • the method includes: transporting 301 the substantially vertically arranged large area substrate relative to a measuring arrangement in a transport direction, illuminating 302 the substantially vertically arranged large area substrate with diffusive light, and measuring 303 the at least one property of the substantially vertically arranged large area substrate.
  • transporting 301 the substantially vertically arranged large area substrate relative to a measuring arrangement includes moving the substantially vertically arranged large area substrate relative to the measuring arrangement at a transportation speed of at least 1 m/min, particularly of at least 20 m/min, more particularly of at least 35 m/min, e.g. 50 m/min.
  • a transport system as described herein is employed.
  • an illuminating device as described herein is employed.
  • measuring 303 the at least one optical property of the substantially vertically arranged large area substrate may be carried out during transporting the substantially vertically arranged large area substrate relative to a measuring arrangement.
  • the measuring of at least one optical property of the substantially vertically arranged large area substrate can be carried out at selectable time intervals or continuously.
  • measuring 303 the at least one optical property of the substantially vertically arranged large area substrate may include using the measuring arrangement 200 as described herein.
  • measuring 303 the at least one optical property of the substantially vertically arranged large area substrate includes moving the at least one optical measuring device vertical to the transport direction of the vertically arranged large area substrate.
  • the methods for method for measuring at least one optical property of a substantially vertically arranged large area substrate can be conducted by means of computer programs, software, computer software products and the interrelated controllers, which can have a CPU, a memory, a user interface, and input and output means being in communication with the corresponding components of the apparatus for processing a large area substrate.

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Abstract

La présente invention porte sur un appareil (100) de traitement de substrat (120) de grande surface et un procédé de mesure d'au moins une propriété optique d'un substrat de grande surface agencé sensiblement verticalement. L'appareil de traitement de substrat de grande surface comprend : un agencement (110) de chambre destiné à transporter le substrat de grande surface à travers celle-ci en un état agencé verticalement, l'agencement de chambre comprenant au moins une chambre, un dispositif de traitement destiné à traiter le substrat de grande surface agencé verticalement et un orifice (112) de sortie pour le substrat de grande surface agencé verticalement ; un système de transport destiné à transporter le substrat à travers l'agencement de chambre ; et un agencement (210) de mesure comprenant un dispositif de mesure optique. Le dispositif de mesure optique comprend un dispositif (211) d'éclairage destiné à émettre une lumière diffuse sur le substrat de grande surface agencé verticalement, et un dispositif de détection de lumière destiné à mesurer au moins une propriété optique du substrat de grande surface agencé verticalement.
PCT/EP2013/065412 2013-07-22 2013-07-22 Appareil et procédé de traitement de substrat de grande surface WO2015010714A1 (fr)

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PCT/EP2013/065412 WO2015010714A1 (fr) 2013-07-22 2013-07-22 Appareil et procédé de traitement de substrat de grande surface
CN201380078080.6A CN105358959A (zh) 2013-07-22 2013-07-22 用于处理大面积基板的设备和方法
TW103125047A TW201520539A (zh) 2013-07-22 2014-07-22 用於處理一大面積基板之設備及方法

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