WO2015005735A1 - Structure de film d'oxyde métallique - Google Patents

Structure de film d'oxyde métallique Download PDF

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Publication number
WO2015005735A1
WO2015005735A1 PCT/KR2014/006276 KR2014006276W WO2015005735A1 WO 2015005735 A1 WO2015005735 A1 WO 2015005735A1 KR 2014006276 W KR2014006276 W KR 2014006276W WO 2015005735 A1 WO2015005735 A1 WO 2015005735A1
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WO
WIPO (PCT)
Prior art keywords
metal oxide
film structure
oxide film
metal
particles
Prior art date
Application number
PCT/KR2014/006276
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English (en)
Korean (ko)
Inventor
김옥률
김옥민
Original Assignee
(주)펨빅스
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020130082217A external-priority patent/KR101350294B1/ko
Priority claimed from KR1020130133053A external-priority patent/KR101500517B1/ko
Application filed by (주)펨빅스 filed Critical (주)펨빅스
Priority to US14/903,239 priority Critical patent/US10081871B2/en
Priority to JP2016525291A priority patent/JP6194112B2/ja
Priority to CN201480038097.3A priority patent/CN105392922B/zh
Publication of WO2015005735A1 publication Critical patent/WO2015005735A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C24/00—Coating starting from inorganic powder
    • C23C24/02—Coating starting from inorganic powder by application of pressure only

Definitions

  • the present invention relates to a metal oxide film structure formed on the surface of the substrate, the number of atoms of the metal element and the number of oxygen elements constituting the metal oxide film exhibits a non-stoichiometric characteristics, so that the density of the metal oxide film before the coating (
  • the former relates to a metal oxide film structure that is densely formed at 90% to 100% of the metal oxide density and is free of cracks and pores.
  • Metal oxide is a material in the form of a combination of metal atoms and oxygen atoms, used in the industry as a coating material, the metal oxide has an inherent density as shown in Table 1.
  • Metal oxides include yttrium oxide (Y 2 O 3 ), aluminum oxide (Al 2 O 3 ), magnesium oxide (MgO), zinc oxide (ZnO), tin oxide (SnO), iron oxide (FeO), and titanium oxide (TiO 2 ) , Zirconium oxide (ZrO 2 ), chromium oxide (Cr 2 O 3 ), hafnium oxide (HfO), berylnium oxide (BeO), and the like, the metal oxide is a metal oxide as shown in Table 1 below. It is a substance that satisfies the stoichiometry characteristic of which each atom is composed of a simple integer.
  • the process is stopped to clean the substrate contaminated by particles, and the substrate is taken out of the process chamber to be ex-situ cleaned and then cleaned.
  • the process must be performed after the substrate is mounted inside the chamber.
  • ex-situ cleaning may be performed by wet or dry in-situ cleaning without stopping the process and opening the process chamber. Cleaning cycles can be extended, greatly improving productivity and yield. Therefore, particle adhesion resistance of the surface of the substrate is required in such a treatment step.
  • the substrate requires anti-plasma resistance and corrosion resistance as well as particle adhesion.
  • the substrate is exposed to a fluorine-based gas plasma atmosphere such as fluorine nitride (NF 3 ) and high temperature in the deposition process, while the chlorine-based gas (for example, boron chloride (BCl), etc.) used as the etching gas in the etching process, and fluorine-based This is because they are exposed to corrosive gases such as gases (eg, carbon fluoride (CF 4 ), etc.).
  • gases eg, carbon fluoride (CF 4 ), etc.
  • the present invention forms a yttrium oxide layer on the surface of the substrate with yttrium oxide (Y 2 O 3 ) powder excellent in corrosion resistance and plasma resistance to fluorine-based gas, chlorine-based gas, etc., thereby greatly improving particle adhesion resistance of the substrate surface.
  • Y 2 O 3 yttrium oxide
  • Another purpose is to provide a membrane structure.
  • the present invention relates to a metal oxide film structure formed on a substrate surface, wherein a metal oxide represented by X a Y b (X: metal element, Y: oxygen element, a: metal element atom number, b: oxygen element atom number) is formed.
  • a metal oxide represented by X a Y b X: metal element, Y: oxygen element, a: metal element atom number, b: oxygen element atom number
  • the atomic percent of the metal element of the metal oxide film structure is greater than ⁇ a / (a + b) ⁇ ⁇ 100 (%), and the film structure is composed of nanocrystalline particles and nanocrystalline particles.
  • the particles constituting the membrane structure do not involve growth by heat and change to crystalline by heat, and are free of cracks and pores.
  • the metal oxide membrane structure as described above is transported in which the inlet gas sucked into the transport pipe by the negative pressure inside the coating chamber receiving the injection nozzle at the end of the transport pipe and the supply gas supplied to the transport pipe through the gas supply device are mixed. Gas is transported through the injection nozzle by transporting the solid powder introduced into the transport pipe, the solid powder is manufactured by applying a solid powder spray coating method for spray coating on the substrate provided in the coating chamber in the vacuum state can do.
  • the metal oxide film structure provided by the present invention can be widely used in the semiconductor and electronic fields due to the following effects.
  • the yttria membrane structure can be formed on substrates of various materials (ceramic, metal, nonmetal, semimetal, polymer, etc.) and can be used in various product manufacturing and processing processes.
  • FIG. 1 is a cross-sectional view of a yttria (Y 2 O 3 ) membrane structure (spectrum 1).
  • FIG. 2 shows the results of energy dispersive x-ray spectroscopy (EDS) elemental analysis on the cross section (spectrum 1) of the yttria membrane structure.
  • EDS energy dispersive x-ray spectroscopy
  • FIG. 3 is a cross-sectional view of the yttria membrane structure (spectrum 7).
  • FIG. 4 shows the results of the energy dispersive x-ray spectroscopy (EDS) elemental analysis of the cross section (spectrum 7) of the yttria membrane structure.
  • EDS energy dispersive x-ray spectroscopy
  • FIG. 5 is a 20 nm scale transmission electron microscopy (TEM) photograph of the yttria membrane structure.
  • TEM transmission electron microscopy
  • FIG. 6 is a 5 nm scale TEM photograph of the yttria membrane structure.
  • FIG. 7 is a 2 nm scale TEM photograph of the yttria membrane structure.
  • FIG. 8 is an electron diffraction pattern photograph of the yttria membrane structure shown in FIG. 7.
  • FIG. 10 is a graph comparing the number of particles on a wafer as the process proceeds to the substrate before and after the yttria film structure is formed on the surface.
  • FIG. 11 is a graph comparing the number of particles on a wafer according to the cumulative number of wafers in a process chamber in the case where a spray-coated yttria film structure is formed on a surface of a process substrate and when the yttria film structure according to the present invention is formed. to be.
  • FIG. 12 is a schematic view of a solid-phase powder coating apparatus for producing a metal oxide film structure according to the present invention.
  • the "yttria membrane structure formed on the substrate surface is a yttrium atomic weight percent of 60% to 97%, an oxygen atomic weight percentage of 3% to 40%, and the membrane
  • the structure is composed of nanocrystalline particles and nanocrystalline particles, the nanocrystalline particles and nanocrystalline particles have a particle size of 2 ⁇ 500nm, the particles constituting the membrane structure is not accompanied by growth by heat and crystalline by heat Yttria membrane structure, which is characterized by no cracks and pores, so that particles adhering to the surface of the substrate during the manufacturing process of semiconductors and the like are reduced.
  • the present invention provides a metal oxide film structure formed on the substrate surface.
  • the material of the substrate on which the metal oxide film can be formed according to the present invention may be any of ceramic, metal, nonmetal, semimetal, and polymer.
  • the inventors of the present invention coated yttria (yttrium acid), which is a kind of metal oxide, on the surface of the substrate to construct an yttria membrane structure in which the number of atoms of the yttrium element and the number of atoms of the oxygen element were non-stoichiometric. That is, the atomic percentage of the yttrium element constituting the membrane structure was larger than the atomic percentage when the yttrium oxide was in a stoichiometric state.
  • yttria yttrium acid
  • the metal oxide when expressed as X a Y b (X: metal element, Y: oxygen element, a: number of metal elements, b: number of oxygen atoms), the metal element of the metal oxide film structure
  • the atomic percent is greater than ⁇ a / (a + b) ⁇ ⁇ 100 (%).
  • FIGS. 1 and 3 are cross sections of the yttria membrane structure (spectrum 1 and spectrum 7).
  • EDS energy dispersive x-ray spectroscopy
  • Y yttrium
  • O oxygen
  • yttria (Y 2 O 3 ) satisfying stoichiometry is bound by two yttrium (Y) atoms and three oxygen (O) atoms. Represents an atomic percentage of 40.00% and an oxygen atom of 60.00%.
  • the atomic percentages of oxygen elements in spectrum 1 and spectrum 7 were 21.39% and 45.38%, respectively. This means that when yttria satisfies the stoichiometry, the atomic percentage of oxygen element is less than 60%.
  • the atomic percent of yttrium element in spectrum 1 and spectrum 7 was 78.61% and 54.62%, respectively, and the atomic percent when satisfying the stoichiometry was 40% or more.
  • the yttria membrane structure derived from the present invention is a nonstoichiometric structure.
  • the difference between the atomic percentages shown in the spectrum 1 and spectrum 7 may be attributed to the coating conditions when the yttrium oxide film is formed on the substrate surface.
  • Table 2 below summarizes the atomic percent change before and after the formation of the yttria film.
  • the density of the film structure formed of the metal oxide yttria was 4.88g / cm 3 ⁇ 4.93g / cm 3 . This shows a dense density characteristic of 97.4% to 98.4% of the yttrium density (5.010 g / cm 3 ) shown in [Table 1].
  • the characteristics of the yttria membrane structure using the yttria metal oxide were examined, but other metal oxides also exhibit the same tendency as yttria. That is, when the metal oxide film structure provided by the present invention is formed on the surface of the substrate, the number of atoms of the metal element and the number of oxygen elements constituting the metal oxide film exhibit non-stoichiometric characteristics, and the metal elements of the structure Atomic percent is formed larger than the atomic percentage of the metal element when the metal oxide is stoichiometrically satisfied, and the density of the metal oxide film is 90% of the density of the metal oxide before coating. Dense membrane structures are formed which are ⁇ 100%.
  • the metal oxide film structure provided by the present invention is composed of nanocrystalline particles and nanocrystalline particles, the particles constituting the film structure does not involve growth by heat and change to crystalline by heat, cracks and pores It is characterized by the absence.
  • FIG. 5 is a 20 nm scale TEM photograph of a structure in which a yttria (Y 2 O 3 ) layer, which is a type of metal oxide, is formed on a surface of a substrate, and when observed, the pores are formed of crystalline particles and amorphous particles. You can see that there is no.
  • a yttria (Y 2 O 3 ) layer which is a type of metal oxide
  • FIG. 6 is a 5 nm scale TEM image of the yttria membrane structure
  • FIG. 7 is a 2 nm scale TEM image of the yttria membrane structure. 6 and 7, when the yttria membrane structure is observed in more detail, an amorphous particle layer is observed between the crystalline particle layers, and the structural characteristics are obtained through the electron diffraction pattern of the amorphous particle layer [FIG. 8]. You can check it.
  • the amorphous particles of the yttria membrane structure may be changed to crystalline by growing by heat treatment, and thus the yttria membrane structure may be changed into a nanostructure having a polycrystalline electron diffraction pattern.
  • FIG. 9 shows before and after the formation of the yttria membrane structure on the surface of the substrate subjected to in-situ cleaning by NF 3 gas in the process chamber.
  • the particle adhesion amount comparison and change graph of "A" is described below. Comparing the surface particle adhesion amounts of the B substrate and the A substrate, it can be seen that the particle adhesion amount of the A substrate is significantly reduced.
  • the amount of particle adhesion of A-based material is significantly lower than that of B-based material, and the removal of attached particles is also faster when A-based material is applied, which shortens the NF 3 gas cleaning time and resumes the process immediately after this cleaning. have. That is, when the substrate on which the yttria film structure is formed is applied to a semiconductor manufacturing process or the like, particle adhesion is minimized, in-situ cleaning time is shortened, and particles are stabilized while rapidly decreasing.
  • FIG. 10 is a graph comparing the number of particles on a wafer as the process proceeds with B and A materials.
  • impurities particles adhered to the surface of the substrate are attached to the surface of the wafer as the process time elapses, which causes wafer defects.
  • a large amount of particles are generated when the B substrate is applied, and particles accumulated on the surface of the substrate are randomly detached and poured, whereas when the A substrate is applied, 50 particles on the wafer are overall. It turns out that it stabilizes, decreasing below.
  • Metal oxide film structure provided by the present invention is composed of nanocrystalline particles and nanocrystalline particles
  • the prior art that can form a coating layer of a mixture of crystalline particles and amorphous particles is a physical vapor deposition method (PVD; By depositing yttria-stabilized zirconia (YSZ) particles on the substrate by PLD (Pulsed Laser Deposition), a kind of physical vapor deposition, the entire deposition layer is formed amorphous and then heated to tens to hundreds of degrees Celsius. It is grown by heat to change a part to crystalline, and through the additional heat treatment, the entire deposition layer is formed into a crystalline layer.
  • PVD physical vapor deposition method
  • YSZ yttria-stabilized zirconia
  • the present invention unlike the prior art described above, is formed of a metal oxide film composed of nanocrystalline particles and nanocrystalline particles with only one coating. That is, the present invention is different from the existing prior art which requires growth by heat and change to heat crystalline by additional heat treatment in the coating layer during and after the formation of the metal oxide film structure, and thus the metal oxide provided by the present invention.
  • the effect of particle adhesion of the membrane structure is also very good.
  • the yttria membrane structure formed of yttria which is a kind of metal oxide for anti-particle adhesion, is described.
  • the surface of the structure layer is preceded. Not only is it different from the surface layer implemented by the thermal spray coating and the PLD method, but also has the structural characteristics such as the electron diffraction pattern of the amorphous particle layer as shown in FIG. 8 that cannot be obtained by the prior art. This is because they are different in comparison.
  • FIG. 11 is a graph comparing the number of particles on a wafer according to the cumulative number of wafers in a process chamber in the case where a spray-coated yttria film structure is formed on a surface of a process substrate and when the yttria film structure according to the present invention is formed.
  • the cumulative number of wafers in the process chamber is increased to 100, the particles attached to the process substrate fall and accumulate to 5,000 or more, while in the latter case, the cumulative number of wafers in the process chamber is 100. It can be seen that even if the number of particles increases, the number of particles is maintained at a level of 50 or less and is showing a stable state.
  • the more particles the higher the risk of process failure, leading to a state in which the process must be stopped.
  • a thermal spray coated substrate is applied to apply powder to the powder
  • a large amount of particles are generated and an unstable particle tendency is generated
  • the yttria membrane structure is applied to the surface of the process substrate without applying heat according to the present invention.
  • a stable particle state can be obtained when the base material is formed. Therefore, when the characteristics of the yttria membrane structure according to the present invention are expressed, the number of particles adhering to the substrate surface and the wafer during the process is significantly reduced compared to the case where the thermal spray coating technology involving heat is applied, thereby exhibiting stable particle adhesion resistance. do. Particularly, the finer the process, the more sensitive it is to the number of particles.
  • the metal oxide membrane structure is a transport gas in which a suction gas sucked into the transport pipe by a negative pressure inside the coating chamber accommodating the injection nozzle at the end of the transport pipe and a supply gas supplied to the transport pipe through the gas supply device are mixed.
  • a solid powder spray coating method for transporting the solid powder introduced into the transport pipe is injected through the injection nozzle, the solid powder is spray-coated to the substrate provided in the coating chamber in the vacuum state Can be.
  • the solid powder spray coating method as described above includes a transport pipe 10 providing a transport path of the solid powder 4 as shown in FIG.
  • a gas supply pipe 15 serving as a flow path of the supply gas supplied from the gas supply device 20;
  • An injection nozzle 30 coupled to the distal end of the transport pipe 10 or the gas supply pipe 20;
  • a coating chamber 40 accommodating the spray nozzle 30;
  • Solid powder supply unit (not shown) for supplying the solid powder (4) accommodated in the environment in the atmospheric pressure state to the transport pipe (10);
  • a pressure regulator 50 for adjusting the internal pressure of the coating chamber 40; It is configured to include, by the negative pressure of the coating chamber 40 formed by the drive of the pressure regulating device 50 is configured to suck the gas in the atmospheric pressure to the transport pipe 10, the suction gas (1) and Solid-phase powder coating apparatus configured so that the supply gas 2 together acts as the transporting gas 3 of the solid-phase powder 4 ''.
  • Metal oxide film structure provided by the present invention is improved in the density (density) and hardness (hardness) of the metal oxide film formed on the surface of the substrate, and particles on the surface of the substrate during the process (e.g. semiconductor manufacturing process, display device manufacturing process, etc.)
  • the adhesion can be minimized, so that it is possible to industrially replace the conventional metal oxide coating layer, which has been required for particle adhesion resistance, but it is difficult to solve the problem.

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)

Abstract

L'invention concerne une structure de film d'oxyde métallique formée sur une surface d'un matériau de base, et plus particulièrement, une structure de film d'oxyde métallique dans laquelle le nombre d'atomes d'un élément métal et le nombre d'atomes d'un élément oxygène constituant le film d'oxyde métallique présentent des caractéristiques non-stoechiométriques telles que la structure est densifiée et formée de sorte que la densité de l'oxyde métallique est de 90 à 100% de la densité de l'oxyde métallique avant application du revêtement. La structure est ainsi préservée des fissures ou bulles d'air. On décrit la structure de film d'oxyde métallique, qui est formée sur la surface du matériau de base et dans laquelle, lorsqu'un oxyde métallique représenté par XaYb (X étant un élément métal; Y étant un élément oxygène; a étant un nombre d'atomes de l'élément métal; b étant un nombre d'atomes de l'élément oxygène) est formé en une structure de film, le pourcentage atomique de l'élément métal dans la structure de film d'oxyde métallique est plus grande que {a/(a+b)}×100 (%)}. La structure de film comprend des particules nanocristallines et des particules non nanocristallines. Les particules constituant la structure de film ne croissent pas du fait de la chaleur, ou deviennent cristallines du fait de la chaleur, et la structure est exempte de fissures et de bulles d'air.
PCT/KR2014/006276 2013-07-12 2014-07-11 Structure de film d'oxyde métallique WO2015005735A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US14/903,239 US10081871B2 (en) 2013-07-12 2014-07-11 Metal oxide film structure
JP2016525291A JP6194112B2 (ja) 2013-07-12 2014-07-11 金属酸化物膜構造物
CN201480038097.3A CN105392922B (zh) 2013-07-12 2014-07-11 金属氧化物膜结构物

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR10-2013-0082217 2013-07-12
KR1020130082217A KR101350294B1 (ko) 2013-07-12 2013-07-12 균열이 없는 금속산화물 막 구조물
KR10-2013-0133053 2013-11-04
KR1020130133053A KR101500517B1 (ko) 2013-06-27 2013-11-04 이트리아 구조물

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WO2015005735A1 true WO2015005735A1 (fr) 2015-01-15

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020063575A (ko) * 2000-09-15 2002-08-03 루센트 테크놀러지스 인크 등방성 네가티브 열팽창 세라믹 및 이의 제조방법
KR20040088045A (ko) * 2002-02-06 2004-10-15 쌩-고벵 글래스 프랑스 비 화학량론적 ｎｉｏｘ 세라믹 타깃
KR20060109851A (ko) * 2005-04-18 2006-10-23 산드빅 인터렉츄얼 프로퍼티 에이비 코팅된 인서트
JP2009531543A (ja) * 2006-03-27 2009-09-03 シーメンス アクチエンゲゼルシヤフト 非化学量論的粒子を有するマトリックス及び層組織

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020063575A (ko) * 2000-09-15 2002-08-03 루센트 테크놀러지스 인크 등방성 네가티브 열팽창 세라믹 및 이의 제조방법
KR20040088045A (ko) * 2002-02-06 2004-10-15 쌩-고벵 글래스 프랑스 비 화학량론적 ｎｉｏｘ 세라믹 타깃
KR20060109851A (ko) * 2005-04-18 2006-10-23 산드빅 인터렉츄얼 프로퍼티 에이비 코팅된 인서트
JP2009531543A (ja) * 2006-03-27 2009-09-03 シーメンス アクチエンゲゼルシヤフト 非化学量論的粒子を有するマトリックス及び層組織

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