WO2015005373A1 - Dispositif électroluminescent comprenant des nanoparticules d'argent et son procédé de fabrication - Google Patents

Dispositif électroluminescent comprenant des nanoparticules d'argent et son procédé de fabrication Download PDF

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Publication number
WO2015005373A1
WO2015005373A1 PCT/JP2014/068271 JP2014068271W WO2015005373A1 WO 2015005373 A1 WO2015005373 A1 WO 2015005373A1 JP 2014068271 W JP2014068271 W JP 2014068271W WO 2015005373 A1 WO2015005373 A1 WO 2015005373A1
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WO
WIPO (PCT)
Prior art keywords
silver
emitting device
monoamine
aliphatic hydrocarbon
circuit pattern
Prior art date
Application number
PCT/JP2014/068271
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English (en)
Japanese (ja)
Inventor
井口由紀
岡本和樹
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株式会社ダイセル
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Publication date
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Publication of WO2015005373A1 publication Critical patent/WO2015005373A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/05—Metallic powder characterised by the size or surface area of the particles
    • B22F1/054—Nanosized particles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F9/00—Making metallic powder or suspensions thereof
    • B22F9/16—Making metallic powder or suspensions thereof using chemical processes
    • B22F9/30—Making metallic powder or suspensions thereof using chemical processes with decomposition of metal compounds, e.g. by pyrolysis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Led Device Packages (AREA)
  • Powder Metallurgy (AREA)
  • Manufacture Of Metal Powder And Suspensions Thereof (AREA)

Abstract

La présente invention concerne : un dispositif électroluminescent comprenant un tracé de circuit qui présente une conductivité électrique et une conductivité thermique supérieures et dans lequel la détérioration d'un élément semi-conducteur optique au cours du procédé de fabrication est supprimée ; et un procédé de fabrication dudit dispositif électroluminescent de manière stable et efficace sans faire subir de détérioration thermique à l'élément semi-conducteur optique. Ledit dispositif électroluminescent comprend un élément semi-conducteur optique, un tracé de circuit et un substrat isolant et il est caractérisé en ce que l'élément semi-conducteur optique et le tracé de circuit sont en contact électrique et/ou thermique, ledit tracé de circuit étant disposé sur le substrat isolant, ledit tracé de circuit étant formé par frittage de nanoparticules d'argent et lesdites nanoparticules d'argent étant obtenues par décomposition thermique d'un mélange contenant un amine (A) comprenant un groupe aminé et un groupe d'hydrocarbure aliphatique, et un composé de l'argent (B).
PCT/JP2014/068271 2013-07-09 2014-07-09 Dispositif électroluminescent comprenant des nanoparticules d'argent et son procédé de fabrication WO2015005373A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013-143479 2013-07-09
JP2013143479A JP2016157708A (ja) 2013-07-09 2013-07-09 銀ナノ粒子を用いた発光装置及びその製造方法

Publications (1)

Publication Number Publication Date
WO2015005373A1 true WO2015005373A1 (fr) 2015-01-15

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PCT/JP2014/068271 WO2015005373A1 (fr) 2013-07-09 2014-07-09 Dispositif électroluminescent comprenant des nanoparticules d'argent et son procédé de fabrication

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Country Link
JP (1) JP2016157708A (fr)
TW (1) TW201513137A (fr)
WO (1) WO2015005373A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3115129A1 (fr) * 2015-07-10 2017-01-11 Commissariat A L'energie Atomique Et Aux Energies Alternatives Ensemble comportant un element susceptible de transmettre de la chaleur, un film de polymere bon conducteur thermique et isolant electrique, un joint fritte et un radiateur et procede de fabrication
WO2020215097A1 (fr) * 2019-04-19 2020-10-22 Luxel Corporation Film ultramince autonome dopé avec des nanoparticules

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008214695A (ja) * 2007-03-05 2008-09-18 Shoei Chem Ind Co 銀超微粒子の製造方法
WO2010073844A1 (fr) * 2008-12-26 2010-07-01 株式会社応用ナノ粒子研究所 Procédé de microcâblage, composant électronique, composant électronique émettant de la lumière, composant électronique émettant de la lumière composite et dispositif émettant de la lumière
JP2010265543A (ja) * 2009-04-17 2010-11-25 Yamagata Univ 被覆銀超微粒子とその製造方法
JP2011091213A (ja) * 2009-10-22 2011-05-06 Toshiba Lighting & Technology Corp 発光モジュールおよび照明装置
JP2012162767A (ja) * 2011-02-04 2012-08-30 Yamagata Univ 被覆金属微粒子とその製造方法
JP2012246560A (ja) * 2011-05-31 2012-12-13 Daicel Corp 銀含有ナノ粒子の製造方法及び銀含有ナノ粒子、並びに銀塗料組成物

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008214695A (ja) * 2007-03-05 2008-09-18 Shoei Chem Ind Co 銀超微粒子の製造方法
WO2010073844A1 (fr) * 2008-12-26 2010-07-01 株式会社応用ナノ粒子研究所 Procédé de microcâblage, composant électronique, composant électronique émettant de la lumière, composant électronique émettant de la lumière composite et dispositif émettant de la lumière
JP2010265543A (ja) * 2009-04-17 2010-11-25 Yamagata Univ 被覆銀超微粒子とその製造方法
JP2011091213A (ja) * 2009-10-22 2011-05-06 Toshiba Lighting & Technology Corp 発光モジュールおよび照明装置
JP2012162767A (ja) * 2011-02-04 2012-08-30 Yamagata Univ 被覆金属微粒子とその製造方法
JP2012246560A (ja) * 2011-05-31 2012-12-13 Daicel Corp 銀含有ナノ粒子の製造方法及び銀含有ナノ粒子、並びに銀塗料組成物

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3115129A1 (fr) * 2015-07-10 2017-01-11 Commissariat A L'energie Atomique Et Aux Energies Alternatives Ensemble comportant un element susceptible de transmettre de la chaleur, un film de polymere bon conducteur thermique et isolant electrique, un joint fritte et un radiateur et procede de fabrication
FR3038534A1 (fr) * 2015-07-10 2017-01-13 Commissariat Energie Atomique Assemblage d'un element avec un substrat isole electriquement et a faible resistance thermique notamment pour des applications haute temperature, ensemble comprenant ledit assemblage et un drain thermique et procede de fabrication
US9865530B2 (en) 2015-07-10 2018-01-09 Commissariat A L'energie Atomique Et Aux Energies Alternatives Assembly comprising an element that is capable of transmitting heat, a film of a polymer that is a good thermal conductor and electrical insulator, a sintered joint and a radiator and manufacturing method
WO2020215097A1 (fr) * 2019-04-19 2020-10-22 Luxel Corporation Film ultramince autonome dopé avec des nanoparticules

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JP2016157708A (ja) 2016-09-01
TW201513137A (zh) 2015-04-01

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