WO2014206650A1 - Verfahren zur herstellung eines vielschicht-varistorbauelements und vielschicht-varistorbauelement - Google Patents
Verfahren zur herstellung eines vielschicht-varistorbauelements und vielschicht-varistorbauelement Download PDFInfo
- Publication number
- WO2014206650A1 WO2014206650A1 PCT/EP2014/060354 EP2014060354W WO2014206650A1 WO 2014206650 A1 WO2014206650 A1 WO 2014206650A1 EP 2014060354 W EP2014060354 W EP 2014060354W WO 2014206650 A1 WO2014206650 A1 WO 2014206650A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- electrode layer
- component
- multilayer varistor
- varistor
- starting material
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 10
- 239000010949 copper Substances 0.000 claims abstract description 71
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 69
- 229910052802 copper Inorganic materials 0.000 claims abstract description 69
- 239000007858 starting material Substances 0.000 claims abstract description 37
- 238000000034 method Methods 0.000 claims abstract description 31
- 230000001681 protective effect Effects 0.000 claims abstract description 16
- 239000007789 gas Substances 0.000 claims description 17
- 238000002161 passivation Methods 0.000 claims description 17
- 238000007669 thermal treatment Methods 0.000 claims description 15
- 238000009792 diffusion process Methods 0.000 claims description 14
- 230000000052 comparative effect Effects 0.000 claims description 11
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 9
- 229910052760 oxygen Inorganic materials 0.000 claims description 9
- 239000001301 oxygen Substances 0.000 claims description 9
- 229910052709 silver Inorganic materials 0.000 claims description 9
- 239000004332 silver Substances 0.000 claims description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- 230000004888 barrier function Effects 0.000 claims description 7
- 239000011261 inert gas Substances 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 229910052756 noble gas Inorganic materials 0.000 claims description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 12
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 10
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 229910052759 nickel Inorganic materials 0.000 description 6
- 230000003647 oxidation Effects 0.000 description 6
- 238000007254 oxidation reaction Methods 0.000 description 6
- 239000011787 zinc oxide Substances 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 239000000654 additive Substances 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 238000005261 decarburization Methods 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 2
- 239000003518 caustics Substances 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 150000001722 carbon compounds Chemical class 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007323 disproportionation reaction Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- -1 for example Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/18—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material comprising a plurality of layers stacked between terminals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C1/00—Details
- H01C1/14—Terminals or tapping points or electrodes specially adapted for resistors; Arrangements of terminals or tapping points or electrodes on resistors
- H01C1/148—Terminals or tapping points or electrodes specially adapted for resistors; Arrangements of terminals or tapping points or electrodes on resistors the terminals embracing or surrounding the resistive element
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/28—Apparatus or processes specially adapted for manufacturing resistors adapted for applying terminals
- H01C17/281—Apparatus or processes specially adapted for manufacturing resistors adapted for applying terminals by thick film techniques
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/28—Apparatus or processes specially adapted for manufacturing resistors adapted for applying terminals
- H01C17/281—Apparatus or processes specially adapted for manufacturing resistors adapted for applying terminals by thick film techniques
- H01C17/283—Precursor compositions therefor, e.g. pastes, inks, glass frits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
- H01C7/1006—Thick film varistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/228—Terminals
- H01G4/232—Terminals electrically connecting two or more layers of a stacked or rolled capacitor
- H01G4/2325—Terminals electrically connecting two or more layers of a stacked or rolled capacitor characterised by the material of the terminals
Definitions
- the present invention relates to a method for
- the present invention further relates to a multilayer varistor device.
- a problem to be solved is to provide an improved
- a proposed method comprises providing a base body for a multilayer varistor component, wherein the base body comprises a plurality of internal electrodes.
- the internal electrodes are preferably within the
- the Basic body arranged one above the other.
- the internal electrodes are also suitably electrically separated from each other.
- the inner electrodes are further arranged and formed such that they overlap at least partially, wherein adjacent inner electrodes from opposite end sides of the base body of are accessible.
- the end faces preferably describe side surfaces of the main body.
- the varistor layers are the varistor layers.
- varistor layers preferably comprise zinc oxide
- the varistor layers consist of at least 90% zinc oxide.
- the material of the varistor layers may be doped with bismuth and / or antimony or other additives or dopants.
- the method further comprises providing the base body with a starting material for a copper electrode layer such that the starting material is directly connected to at least one inner electrode.
- the starting material is directly connected to at least one inner electrode.
- the method further comprises thermally treating the starting material under a protective gas atmosphere to form the copper electrode layer.
- the starting material contains copper.
- the starting material can furthermore be, for example, carbon or
- the starting material is exposed to the inert gas atmosphere.
- the protective gas atmosphere is in particular intended for oxidation of the copper for the copper electrode layer prevent or protect the copper electrode layer from oxidation. Such oxidation can be during operation
- desired negative electrical properties of the multilayer varistor device negatively influence or destroy, in which the oxygen, which would be exposed to the starting material and / or the material of the body without the protective gas atmosphere, with the starting material and / or
- the oxygen in the varistor layers can lead to a disproportionation of individual constituents, such as zinc and oxygen, as a result of which the electrical, in particular the semiconducting, properties of the
- Multi-layer varistor device would be degraded.
- an electrical contact of the copper electrode layer to the internal electrodes could be affected by the oxidation.
- the method further comprises completing the
- the copper electrode layer is
- the outer electrode can be produced in a particularly cost-effective manner in comparison with other electrode materials, such as, for example, silver, palladium, platinum or gold.
- the method is - in addition to the starting material - during the thermal Treat also the main body exposed to the inert gas.
- the main body has a surface passivation, which acts as a diffusion barrier for a diffusion of the protective gas into the main body during the thermal treatment of the starting material.
- the surface passivation is preferably made of a glass or comprises a glass.
- the surface passivation is preferably a passivation layer.
- Manufacture of the multilayer varistor can be exposed, prevented or reduced.
- the starting material for the copper electrode layer is a
- the copper-containing paste contains
- the copper-containing paste is decarburized by thermal treatment or baked in the body. "Decarburization” should mean that by the thermal treatment of carbon from the
- the copper electrode layer is preferably formed.
- the main body is provided by means of a screen printing process with the starting material for the copper electrode layer.
- the starting material can be thermally treated at temperatures between 400 ° C and 600 ° C. In a preferred embodiment of the process, the starting material is thermally treated at temperatures below 570 ° C.
- the protective gas can diffuse or pass through the surface passivation during thermal treatment via thermal diffusion processes, and thus the electrical properties of the
- Multi-layer varistor component destroyed or impaired.
- the starting material is at temperatures above 400 ° C.
- the protective gas comprises nitrogen or a noble gas.
- the protective gas consists of nitrogen or a noble gas.
- this configuration may suitably be an inert gas for the inert gas for
- the protective gas atmosphere has an oxygen content of less than 300 ppm ("ppm" in English for "parts per million").
- At least one further electrode layer is deposited on the copper electrode layer after the thermal treatment in order to form an outer electrode of the multilayer varistor component together with the copper electrode layer.
- the at least one further electrode layer is electrochemically by means of
- Electrode layers on the copper electrode layer are Electrode layers on the copper electrode layer
- Copper electrode layer as a further electrode layer, a nickel layer or a nickel-containing layer
- the further electrode layer is preferably such that advantageously a diffusion of
- the multilayer varistor component can advantageously be designed to be solderable and / or surface mountable. It continues to be a multilayer varistor device
- the multilayer varistor device comprises an outer electrode forming an area with a
- Copper electrode layer is electrically conductively connected directly to a plurality of internal electrodes of the multilayer varistor device.
- Copper electrode layer can be the outer electrode of the
- Multilayer varistor device and / or the multilayer varistor device are designed in particular cost.
- the multilayer varistor component can preferably be produced by means of the method described above or
- the multilayer varistor component has a surface passivation, which in a region in which the copper electrode layer is directly electrically conductively connected to the internal electrodes, is interrupted.
- Copper electrode layer allows.
- a varistor current of the multilayer varistor component and a varistor current of the comparative component differ by 20% or less under otherwise identical conditions.
- the multilayer varistor component can advantageously be designed such that it is as good as the one
- the percentage values of the mentioned deviations can, for example, be based on the respective higher value of the
- the outer electrode has an area comprising, for example, a nickel layer on.
- the area can serve as a diffusion barrier for outdoor material.
- the outer electrode has a, for example, a tin layer comprehensive
- Multilayer varistor component in particular by means of
- Tin layer solderable to be electrically connected to a circuit board or other electrical components in an application of the multilayer varistor device solderable to be electrically connected to a circuit board or other electrical components in an application of the multilayer varistor device.
- the multilayer varistor device is surface mountable.
- the multilayer varistor component is again space-saving, for example, on a printed circuit board and / or can be used.
- the multilayer varistor component is designed such that the
- Reliability test can be an ESD test ("ESD” for “electrostatic discharge” in English “electrostatic discharge”)
- the reliability test may preferably be a charging or a pulsed electrical load of the multilayer varistor device with short
- Voltage pulses include. Further advantages, advantageous embodiments and advantages of the invention will become apparent from the following description of the embodiments in conjunction with the figures.
- FIG. 1 shows a perspective, schematic representation of at least one part of a multilayer varistor component.
- FIG. 2 shows a schematic view or side view of at least one part of the multilayer varistor component.
- Figure 3 shows a table with electrical parameters of the multilayer varistor device and a
- FIG. 4 shows a voltage-current characteristic of the multilayer varistor component and a comparison component.
- FIG. 5 shows results of an ESD test of the multilayer varistor component and a comparison component.
- FIGS. 6A and 6B show the long-term behavior of leakage currents of the comparative component (FIG. 6A) and of the multilayer varistor component (FIG. 6B).
- the same, similar and equally acting elements are provided in the figures with the same reference numerals.
- the figures and the proportions of the elements shown in the figures with each other are not to scale
- FIG. 1 shows an incomplete representation of a multilayer varistor component 100 for illustrative purposes.
- the multilayer varistor component is preferably used as overvoltage protection, for example of semiconductor components and / or integrated circuits, against short-time overvoltages (typically up to 8 kV). Such overvoltages can be caused for example by friction electricity.
- the multilayer varistor device 100 has a
- the base body 1 preferably comprises varistor layers 9.
- the varistor layers are made
- the varistor layers 9 preferably have bismuth and / or antimony additives and / or are doped with these materials.
- Varistor element preferably consists of a
- dopants are preferably for the high electrical resistance or the
- Varistor layers 9 are preferably sintered.
- the main body 1 furthermore has an end face 7 and an end face 8 opposite the end face 7.
- the main body 1 further comprises internal electrodes 3.
- the inner electrodes 3 are preferably within the
- Internal electrodes 3 are arranged one above the other and
- the Internal electrodes 3 are accessible from the end faces 7, 8, to which they are respectively arranged.
- adjacent internal electrodes at least partially overlap to form an electrically active region thereof during operation of the multilayer varistor device 100.
- the varistor layers 9 are arranged.
- the multilayer varistor component 100 furthermore has a copper electrode layer 4.
- the copper electrode layer 4 is on the front side 7 directly mechanically and electrically conductive with the accessible from the front side 7 from
- the copper electrode layer 4 further preferably has less than 0.1 atomic percent oxygen.
- the main body 1 is preferably by a
- Copper electrode layer 4 has been provided.
- the starting material for the copper electrode layer 4 is preferably a copper-containing paste, which in addition to copper may further contain carbon and solvent.
- the copper-containing paste is decarburized during a thermal treatment of the starting material or in the
- the main body 1 is preferably in a
- the copper electrode layer 4 is preferably formed by the thermal treatment of the starting material for the Copper electrode layer 4 is formed.
- the thermal treatment is under conditions of a protective gas atmosphere
- the shielding gas is preferably nitrogen or a noble gas or comprises at least one of these substances as the main constituent.
- the protective gas atmosphere preferably has an oxygen content of less than 300 ppm.
- the base body 1 is provided with a surface passivation 2 or coated.
- the surface passivation 2 is provided, in particular, in front of the main body 1 or the varistor layers 9 and the inner electrodes 3
- the surface passivation 2 preferably also acts as a diffusion barrier for diffusion of the
- Copper electrode layer 4 The surface passivation 2 is preferably in areas where the
- Copper electrode layer 4 is directly electrically conductively connected to the internal electrodes 3, interrupted.
- Surface passivation is preferably one
- Passivation layer with a layer thickness between 1 ym and 2 ym.
- the surface passivation 2 is preferably made of glass or comprises glass.
- a further electrode layer 5 is arranged or deposited.
- an outer electrode layer 6 is provided arranged or deposited.
- the outer electrode layer 6 preferably comprises tin or is tin.
- the further electrode layer 5 is preferably one
- the further electrode layer 5 preferably comprises nickel or consists of nickel.
- the further electrode layer 5 is preferably such that it comprises the main body 1 and / or the
- Tin or solutions used for an electrolytic tin deposition, to which the multilayer varistor component is exposed during its manufacture or during its operation, are usually particularly corrosive and / or diffusive and can thereby damage the varistor layers 9.
- the further electrode layer 5 and the outer electrode layer 6 do not extend completely over the copper electrode layer 4.
- Electrode layer 6 are preferably deposited electrolytically by means of galvanic processes.
- the copper electrode layer 4, the further electrode layer 5 and the outer electrode layer 6 preferably form an outer electrode 10 of the multilayer varistor component 100.
- the copper electrode layer 4 may be over a
- the further electrode layer may be over a
- the outer electrode layer may extend over an outer region of the outer electrode 10.
- FIG. 2 schematically shows an elevation or side view of the multilayer varistor component 100. It can be seen that the copper electrode layer 4 is arranged on the end faces 7 and 8 of the multilayer varistor component 100.
- Figure 3 shows a table with electrical parameters of the multilayer varistor device with a
- Silver electrode layer (Ag) is replaced.
- Varistor voltage U v is the voltage that drops across the varistor when a current of 1 milliamperes (mA) flows through the varistor.
- the varistor voltage is 103.1 V.
- the varistor voltage is 99, 87 V.
- the varistor current or varistor leakage current I s is the current which flows through the device at a predetermined voltage applied to the device. It can be seen from the values shown that varistor voltage as well as varistor current, for example of the comparison component, are within a deviation of 10% of the respective values of the multilayer varistor component.
- Copper electrode layers are also indicated.
- FIG. 4 shows a voltage-current characteristic of the multilayer varistor component and a comparison component. The differences in the characteristics arise due to the slightly different varistor voltages or by the differences caused by the burning of the
- Figure 5 shows results of an ESD test of the multilayer varistor device and a comparative device in which the copper electrode layer is replaced by a silver electrode layer as described above. In particular, overvoltages are simmulated in the ESD test.
- the corresponding electrical contacts of the ESD test in the present case each have an electrical capacitance of 150 picofarads (pF) and an electrical resistance of 330 ohms. It can be seen in the diagram in FIG. 5 that the change in the
- Varistor voltage of the multilayer varistor device (Cu) compared to an initial value even after the simulation is less than 10%, while the varistor voltage of the comparative device (Ag) analog even changes by much less than 5%.
- Multilayer varistor device adjust the described varistor voltage changes by the ESD test satisfactory result.
- "+” and “-” in Figure 5 indicate the positive and negative current direction, respectively.
- FIGS. 6A and 6B show results of a stabilization test in which the long-term behavior of the varistor current of the
- Comparative component ( Figure 6A) and the multilayer varistor device ( Figure 6B) has been tested.
- the test provides information about the lifetime of the respective component.
- the components were at 125 ° C over a period of 1000 hours with a voltage of
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Thermistors And Varistors (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016522355A JP6603214B2 (ja) | 2013-06-28 | 2014-05-20 | 多層バリスタデバイスの製造方法および多層バリスタデバイス |
CN201480037083.XA CN105340028B (zh) | 2013-06-28 | 2014-05-20 | 用于制造多层可变电阻元件的方法和多层可变电阻元件 |
US14/901,694 US9875831B2 (en) | 2013-06-28 | 2014-05-20 | Method for producing a multi-layer varistor component and a multi-layer varistor component |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102013106810.3A DE102013106810A1 (de) | 2013-06-28 | 2013-06-28 | Verfahren zur Herstellung eines Vielschicht-Varistorbauelements und Vielschicht-Varistorbauelement |
DE102013106810.3 | 2013-06-28 |
Publications (1)
Publication Number | Publication Date |
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WO2014206650A1 true WO2014206650A1 (de) | 2014-12-31 |
Family
ID=50771276
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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PCT/EP2014/060354 WO2014206650A1 (de) | 2013-06-28 | 2014-05-20 | Verfahren zur herstellung eines vielschicht-varistorbauelements und vielschicht-varistorbauelement |
Country Status (5)
Country | Link |
---|---|
US (1) | US9875831B2 (de) |
JP (1) | JP6603214B2 (de) |
CN (1) | CN105340028B (de) |
DE (1) | DE102013106810A1 (de) |
WO (1) | WO2014206650A1 (de) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2018506190A (ja) * | 2015-11-27 | 2018-03-01 | エプコス アクチエンゲゼルシャフトEpcos Ag | 多層デバイスおよび多層デバイスを製造するための方法 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
IL250305B (en) * | 2017-01-26 | 2021-02-28 | Vishay Israel Ltd | Electronic component with flexible terminal |
JP7431798B2 (ja) | 2018-07-18 | 2024-02-15 | キョーセラ・エイブイエックス・コンポーネンツ・コーポレーション | バリスタパッシベーション層及びその製造方法 |
WO2020213320A1 (ja) * | 2019-04-15 | 2020-10-22 | パナソニックIpマネジメント株式会社 | 積層バリスタ |
TWI810594B (zh) * | 2021-06-28 | 2023-08-01 | 佳邦科技股份有限公司 | 多層式壓敏電阻及其製作方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19921109A1 (de) * | 1998-05-28 | 1999-12-09 | Murata Manufacturing Co | Elektronikbauteil |
EP1156498A2 (de) * | 2000-04-25 | 2001-11-21 | TDK Corporation | Vielschicht- Keramikbauteil und Herstellungsverfahren |
US20130020913A1 (en) * | 2011-07-20 | 2013-01-24 | Tdk Corporation | Electronic component and method for manufacturing electronic component |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3102139B2 (ja) | 1992-05-28 | 2000-10-23 | 株式会社村田製作所 | 積層型電子部品の製造方法 |
JP3179313B2 (ja) * | 1995-05-31 | 2001-06-25 | 松下電器産業株式会社 | 電子部品の製造方法 |
US5750264A (en) | 1994-10-19 | 1998-05-12 | Matsushita Electric Industrial Co., Inc. | Electronic component and method for fabricating the same |
JP3013719B2 (ja) | 1994-10-19 | 2000-02-28 | 松下電器産業株式会社 | 電子部品の製造方法 |
DE4443365A1 (de) * | 1994-12-06 | 1996-06-13 | Philips Patentverwaltung | Brenn- und Sinterverfahren für ein keramisches elektronisches Bauteil |
EP0734031B1 (de) | 1995-03-24 | 2004-06-09 | TDK Corporation | Vielschichtvaristor |
JP3640273B2 (ja) * | 1995-03-24 | 2005-04-20 | Tdk株式会社 | 積層型バリスタ |
JP4300770B2 (ja) | 2002-08-12 | 2009-07-22 | 株式会社村田製作所 | 電子部品の製造方法 |
JP3861927B1 (ja) * | 2005-07-07 | 2006-12-27 | 株式会社村田製作所 | 電子部品、電子部品の実装構造および電子部品の製造方法 |
JP4971741B2 (ja) * | 2006-10-10 | 2012-07-11 | コーア株式会社 | 酸化亜鉛系積層チップバリスタの製造方法 |
CN101369486B (zh) * | 2007-08-17 | 2011-02-23 | 赖秋郎 | 具有相对低温烧附铜电极的被动组件结构 |
CN101630553B (zh) * | 2009-07-17 | 2011-10-12 | 立昌先进科技股份有限公司 | 一种氧化锌变阻器的制备方法 |
JP5830715B2 (ja) * | 2010-03-17 | 2015-12-09 | パナソニックIpマネジメント株式会社 | 積層バリスタ及びその製造方法 |
JP5589700B2 (ja) | 2010-09-14 | 2014-09-17 | 株式会社リコー | 画像処理装置、画像形成装置、画像処理方法、画像処理プログラム及び記録媒体 |
JP2013197447A (ja) | 2012-03-22 | 2013-09-30 | Panasonic Corp | 積層バリスタの製造方法 |
-
2013
- 2013-06-28 DE DE102013106810.3A patent/DE102013106810A1/de not_active Withdrawn
-
2014
- 2014-05-20 CN CN201480037083.XA patent/CN105340028B/zh not_active Expired - Fee Related
- 2014-05-20 US US14/901,694 patent/US9875831B2/en not_active Expired - Fee Related
- 2014-05-20 WO PCT/EP2014/060354 patent/WO2014206650A1/de active Application Filing
- 2014-05-20 JP JP2016522355A patent/JP6603214B2/ja not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19921109A1 (de) * | 1998-05-28 | 1999-12-09 | Murata Manufacturing Co | Elektronikbauteil |
EP1156498A2 (de) * | 2000-04-25 | 2001-11-21 | TDK Corporation | Vielschicht- Keramikbauteil und Herstellungsverfahren |
US20130020913A1 (en) * | 2011-07-20 | 2013-01-24 | Tdk Corporation | Electronic component and method for manufacturing electronic component |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2018506190A (ja) * | 2015-11-27 | 2018-03-01 | エプコス アクチエンゲゼルシャフトEpcos Ag | 多層デバイスおよび多層デバイスを製造するための方法 |
KR20180078179A (ko) * | 2015-11-27 | 2018-07-09 | 에프코스 아게 | 세라믹 다층 부품 및 세라믹 다층 부품의 제조 방법 |
US10262778B2 (en) | 2015-11-27 | 2019-04-16 | Epcos Ag | Multilayer component and process for producing a multilayer component |
JP2019062227A (ja) * | 2015-11-27 | 2019-04-18 | ティーディーケイ・エレクトロニクス・アクチェンゲゼルシャフトTdk Electronics Ag | 多層デバイスおよび多層デバイスを製造するための方法 |
KR20190122882A (ko) * | 2015-11-27 | 2019-10-30 | 티디케이 일렉트로닉스 아게 | 세라믹 다층 부품 및 세라믹 다층 부품의 제조 방법 |
KR102038758B1 (ko) * | 2015-11-27 | 2019-10-30 | 티디케이 일렉트로닉스 아게 | 세라믹 다층 부품 및 세라믹 다층 부품의 제조 방법 |
US10566115B2 (en) | 2015-11-27 | 2020-02-18 | Epcos Ag | Multilayer component and process for producing a multilayer component |
KR102285241B1 (ko) * | 2015-11-27 | 2021-08-05 | 티디케이 일렉트로닉스 아게 | 세라믹 다층 부품 및 세라믹 다층 부품의 제조 방법 |
Also Published As
Publication number | Publication date |
---|---|
US9875831B2 (en) | 2018-01-23 |
CN105340028B (zh) | 2018-06-26 |
CN105340028A (zh) | 2016-02-17 |
JP2016526794A (ja) | 2016-09-05 |
JP6603214B2 (ja) | 2019-11-06 |
US20160314880A1 (en) | 2016-10-27 |
DE102013106810A1 (de) | 2014-12-31 |
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