WO2014201869A1 - 一种电致发光二极管器件 - Google Patents

一种电致发光二极管器件 Download PDF

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Publication number
WO2014201869A1
WO2014201869A1 PCT/CN2014/070996 CN2014070996W WO2014201869A1 WO 2014201869 A1 WO2014201869 A1 WO 2014201869A1 CN 2014070996 W CN2014070996 W CN 2014070996W WO 2014201869 A1 WO2014201869 A1 WO 2014201869A1
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layer
protective layer
electroluminescent diode
diode device
inorganic
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PCT/CN2014/070996
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English (en)
French (fr)
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刘亚伟
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深圳市华星光电技术有限公司
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Priority to US14/241,395 priority Critical patent/US9276225B2/en
Publication of WO2014201869A1 publication Critical patent/WO2014201869A1/zh

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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/06—Luminescent, e.g. electroluminescent, chemiluminescent materials containing organic luminescent materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H10K77/111—Flexible substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/15—Hole transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/16—Electron transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/18—Carrier blocking layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/842—Containers
    • H10K50/8426—Peripheral sealing arrangements, e.g. adhesives, sealants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H10K50/8445—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
    • H10K85/6572—Polycyclic condensed heteroaromatic hydrocarbons comprising only nitrogen in the heteroaromatic polycondensed ring system, e.g. phenanthroline or carbazole
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K2211/00—Chemical nature of organic luminescent or tenebrescent compounds
    • C09K2211/10—Non-macromolecular compounds
    • C09K2211/1003—Carbocyclic compounds
    • C09K2211/1011—Condensed systems
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K2211/00—Chemical nature of organic luminescent or tenebrescent compounds
    • C09K2211/10—Non-macromolecular compounds
    • C09K2211/1018—Heterocyclic compounds
    • C09K2211/1025—Heterocyclic compounds characterised by ligands
    • C09K2211/1029—Heterocyclic compounds characterised by ligands containing one nitrogen atom as the heteroatom
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/311—Flexible OLED
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/858—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/141—Organic polymers or oligomers comprising aliphatic or olefinic chains, e.g. poly N-vinylcarbazol, PVC or PTFE
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Definitions

  • the present invention relates to the field of electroluminescent diode devices, and in particular to an electroluminescent diode device, and more particularly to a flexible substrate-based organic ultraviolet electroluminescent diode device and application thereof. Background technique
  • Ultraviolet light is a general term for wavelengths from l Onm to 400iim in the electromagnetic spectrum, and does not cause people's vision.
  • the ultraviolet light source is a non-illuminating electric light source whose main purpose is to generate ultraviolet radiation, which has fluorescence effect, biological effect, photochemical effect and photoelectric effect, and is suitable for industrial, agricultural, national defense and medical fields.
  • Ultraviolet light sources have the fluorescent effect, biological effect, and photochemical effect of ultraviolet light, and have a wide range of applications in the fields of industry, agriculture, national defense, and medical care.
  • the effect of ultraviolet light on the fluorescence effect is mainly fluorescence analysis. After the substance absorbs ultraviolet light, it emits fluorescence which reflects the characteristics of the substance. According to the fluorescence characteristics, the substance can be qualitatively and quantitatively analyzed. Specific applications are: (1) Analysis of inorganic and organic substances (2) Analysis of oil layers, ores, drugs, foods and carcinogens. (3) The auxiliary means of investigating cases in the public security department can analyze bloodstains, drugs, etc., and also identify the authenticity of banknotes and documents.
  • the application of ultraviolet light in biological effects mainly includes: (1) ultraviolet light sterilization, ultraviolet light having a wavelength between 200 and 275 rim is sterilized] 3 ⁇ 4, but the ultraviolet light sterilization effect of different wavelengths is not same. Among them, 254 ⁇ 257 iim wavelength ultraviolet light has the best sterilization effect.
  • the sterilizing mechanism of ultraviolet light irradiation is to cause the nucleic acid, the crude protein and the enzyme in the microbial bacteria to absorb the ultraviolet light energy and chemically change and die. It has extensive bactericidal action and can kill various enemies.
  • ultraviolet light can treat skin diseases such as plaque psoriasis (such as psoriasis and vitiligo), medical diseases (such as rickets and jaundice, etc.), surgical diseases (such as various Acute inflammation and neurological diseases, ultraviolet light self-recovery therapy for advanced malignant tumors, inactivated viruses, etc. (4) Microbial mutation breeding, etc.
  • skin diseases such as plaque psoriasis (such as psoriasis and vitiligo)
  • medical diseases such as rickets and jaundice, etc.
  • surgical diseases such as various Acute inflammation and neurological diseases, ultraviolet light self-recovery therapy for advanced malignant tumors, inactivated viruses, etc.
  • Microbial mutation breeding etc.
  • the energy gap between ultraviolet light with a wavelength between 200 and 400 mil is between 6.2 and 3.1 eV.
  • the chemical bond energy of many compounds is within this range.
  • Many chemical reactions. Specific applications are: (1) can be used for coatings, pigment curing, photolithography, printing and copying, lithography and packaging of semiconductor devices, aging tests of polymer materials.
  • Organic photochemical reaction at a wavelength of 254 to 400 Under the ultraviolet light of nm, the electrons in the organic matter transition from the ground state to the excited state, and a photochemical reaction occurs, which leads to decomposition of organic matter.
  • Ultraviolet light also has important applications in the field of agricultural animal husbandry: (1) Ultraviolet light with a wavelength between 300 and 400 nm is also essential for plant growth. (2) Insects are very sensitive to the purple light between 300 and 400 nm, which can be used to trap pests in farmland. (3) Sterilize the chicken house with ultraviolet light, and the health care of the livestock can increase the growth rate of the livestock, the egg production rate and reduce the mortality of the livestock.
  • UV/near UV light is also widely used in pump dye illumination, white light illumination, and high-capacity data storage.
  • the ultraviolet light source has broad application prospects in industrial and agricultural production and daily life. Since the advent of the world's first high-pressure mercury lamp in 1935, the purple-light source has begun to attract widespread attention. Before the 1950s, mercury lamps were the only artificial ultraviolet light source, but they were not in practice. With the advent of quartz glass, the maturity of packaging technology, the development of the electric vacuum industry and the perfection of ultraviolet spectroscopy, UV light sources have entered a truly valuable application stage. In addition to the earliest mercury lamps, some new UV sources emerged in the late 1950s. According to the variety of lamps can be divided into - mercury arc lamp, metal halide lamp, electrodeless lamp, xenon lamp, excimer UV lamp and UV LED. Among these ultraviolet light sources, the most commonly used gas source is a gaseous ultraviolet light source, which has problems such as large toxicity of the host material, secondary pollution, and inconvenient breakage of the device.
  • the emerging Ultraviolet-Organic Light Emitting Diode has the advantages of environmental protection, low cost, easy large-area production, easy integration with flexible substrates, and can make up for the shortcomings of current ultraviolet light sources.
  • the flexible OLED display device is not only soft and deformable but also not easily damaged, and can be mounted on a curved surface or even on a garment, and thus has become a research hotspot in the international display industry. At present, no related reports on organic ultraviolet electroluminescent diode devices based on flexible substrates have been found. Summary of the invention
  • Another object of the present invention is to provide an application of the organic ultraviolet electroluminescent diode device of the flexible substrate.
  • the present invention provides an electroluminescent diode device comprising: a transparent flexible substrate on which a first protective layer, an anode, a hole transport layer, and a purple etch layer are sequentially disposed on the flexible substrate a light emitting layer, a hole blocking layer, an electron transport layer, and a cathode;
  • the ultraviolet luminescent layer comprises an ultraviolet luminescent material selected from the group consisting of cerium containing at least one of triphenylamines and pentaphenyls.
  • the anode is used to inject holes into the device; the cathode is used to inject electrons into the device; the hole transport layer includes a hole transporting material; The transport layer includes an electron transporting material; the electrons and holes have achieved the effect of illuminating after the luminescent layer is recombined.
  • the ultraviolet luminescent material is a violet containing carbazole having a structure as shown in Formula I.
  • the transparent flexible substrate comprises a light-transmissive material that is weakly absorbed by ultraviolet light, and the light-transmitting material is selected from the group consisting of polymethyl methacrylate, polyethylene adipate or At least one of the polycarbonates [ in a preferred embodiment of the present invention, the first protective layer is composed of an organic polymer material or is alternately laminated by an organic polymer material layer and an inorganic material layer. .
  • the organic polymer material layer may be at least selected from the group consisting of polymethyl methacrylate, polyethylene adipate or polycarbonate.
  • the inorganic material layer may be composed of a material having a band gap of not less than 3.96 eV of silicon nitride having an optical band gap, such as aluminum nitride, silicon nitride, silicon oxide, or the like. Silicon nitride is a commonly used transparent medium for UV devices.
  • the device further includes a second protective layer disposed on the outer side of the cathode, and simultaneously covering other outer surfaces of the device except the transparent flexible substrate side for The first protective layer cooperates to isolate the device from outside air and moisture.
  • the second protective layer is an inorganic protective layer.
  • the unprotected material layer is a material selected from at least one: of Ti0 2, MgO, Si0 2, Zr0 2, ⁇ -, A1 2 0 3, LiF, MgF 2, ZnS, SiN x, SiO x N y , SiO x C y , diamond-like carbon film DLC.
  • the electroluminescent diode device further includes:
  • a package cover comprising a flexible cover plate arranged in sequence, a third protective layer and a desiccant layer;
  • the encapsulating cover plate and the electroluminescent diode are arranged at a distance from the outside of the second protective layer on the side of the encapsulating cover plate and the electroluminescent: photodiode. Package.
  • the second flexible cover plate may be composed of the same flexible polymer material.
  • the structure of the first protective layer is the same as that of the first protective layer, and the organic polymer material and the inorganic material are different from the first protective layer.
  • the organic polymer material is selected from at least one of the following: parylene, polychloro-p-xylene, polyethylene, polystyrene, polypropylene, polyethylene terephthalate , polytetrafluoroethylene, soluble polytetrafluoroethylene, polyethylene terephthalate, polycarbonate, polymethyl methacrylate, polyvinyl acetate, polyether sulfone resin and polyimide;
  • the material includes Ti0 2 , MgO, Si0 2 , Zr0 2 , ZnO, Ai 2 0 3 , LiF, MgF 2 , ZnS, SiN x , SiO ⁇ y , SiO x C y , and a diamond-like film D
  • the package is encapsulated by an encapsulant, which is usually a violet-curable adhesive or an encapsulant formed by doping a glass frit in an ultraviolet curable adhesive.
  • the purpose of doping the glass powder is to better prevent water vapor and oxygen from entering the inside of the package; at the same time, the glass powder is transparent and does not hinder the ultraviolet light curing of the encapsulant.
  • the entire section can penetrate water vapor and oxygen. After doping the glass powder, the glass powder occupies a certain area, so that the water vapor and oxygen permeability area is reduced. It is believed that the penetration of water vapor and oxygen per unit time is reduced, and a better packaging effect is achieved.
  • the diameter of the glass powder should be between 0.01 micrometers and 100 micrometers, and the doping ratio in the violet-curing gel should not exceed 40%, so that the coating of the rubber material can be smoothly completed.
  • the size of the first protective layer is larger than the size of other layers disposed on the first protective layer
  • the size of the third protective layer disposed on the package cover is larger than The size of the other layers on the three protective layers, such that the package between the package cover and the electroluminescent diode is encapsulated by the first protective layer and the second protective layer by the encapsulant, thereby implementing the device
  • the functional layers required for luminescence such as the anode, the hole transport layer, the ultraviolet light-emitting layer hole blocking layer, the electron transport layer, the cathode, etc., are encapsulated in the device to be isolated from the outside air and moisture.
  • the present invention also provides an application of an electroluminescent diode device of the above type in sterilization, fluorescence analysis or photochemical reaction.
  • the gaseous ultraviolet light source is a vacuum device, the device size is difficult to be large, often a point source or a line light source; and the ultraviolet OLED is a planar light source, which can be fabricated into a large-area device.
  • the starting voltage of the gaseous light source is 220V, and the starting voltage of the ultraviolet OLED is only about 0V. At the same time that the starting voltage is greatly reduced, the power consumption of the device is also significantly reduced, and the electro-optical conversion efficiency is greatly improved.
  • FIG. 1 is a schematic structural view of an electroluminescent diode device in a preferred embodiment of the present invention
  • FIG. 2 is a schematic structural view of a first protective layer in a preferred embodiment of the present invention.
  • FIG. 3 is a schematic structural view of an electroluminescent diode device in another preferred embodiment of the present invention.
  • FIG. 4 is a schematic view of an encapsulant in a preferred embodiment of the present invention.
  • ⁇ graph mark 1-flexible substrate, 2-first protective layer, 3-anode, 4-hole transport layer, 5-violet luminescent layer, 6-hole blocking layer, 7-electron transport layer, 8- Cathode, 9-second protective layer, 10-inorganic layer, 11 polymer layer, 12-package adhesive, 13-flexible cover, i4-third protective layer, 15-dry layer, 16-glass powder.
  • the electroluminescence of the present invention the structure of the optical device is as shown in FIG. 1, and the bottom to top includes: it comprises a transparent flexible substrate selected from the group consisting of polymethyl methacrylate, polyethylene adipate or polycarbonate.
  • a first protective layer which is a barix layer, is composed of an alternate layer of an organic polymer material and an inorganic material; since the material of the first protective layer needs to be transparent to ultraviolet light, the organic high
  • the molecular material may be selected from polymethyl methacrylate, polyethylene adipate or polycarbonate, and the inorganic material may be selected from a material having a band gap of not less than 3,96 eV of silicon nitride, such as nitrogen.
  • Aluminum, silicon nitride, silicon oxide, and the like. Silicon nitride is a commonly used ultraviolet light transmissive medium;
  • An anode which is a layer of ruthenium
  • the hole transport layer consisting of ruthenium, ⁇ '-diphenyl-fluorene, ⁇ 'bis(3-methylphenyl)-indole, fluorene-biphenyl 4,4' diamine (TPD) or N,N f - a hole transporting material such as diphenyl N,N'-(1-naphthyl)-U f -biphenyl-4,4' diamine (NPD);
  • Hole blocking layer ffl 1,3,5-: tris(1-phenyl-1H-benzimidazol-2-yl)benzene (TPBI) or 2,9-dimethyl-4,7-biphenyl- a hole blocking material such as 1,10-phenanthroline (BCP);
  • TPBI tris(1-phenyl-1H-benzimidazol-2-yl)benzene
  • BCP 1,10-phenanthroline
  • the electron transport layer consists of an electron transport material such as tris(8-hydroxyquinoline)aluminum (Alq3): Cathode, cathode material such as Al or Ag
  • a second protective layer which is an inorganic protective layer, selected from at least one of the following: TK) 2 , MgO, SK) 2 , Zr0 2 , ZnO, A ⁇ 2 0 3 , UF, MgF 2 , ZnS, SiN x , SiO x N y , Si() x C y , diamond-like carbon film DLC;
  • the second protective layer is disposed outside the cathode and covers the outer surface of the device except the side of the transparent flexible substrate for cooperating with the first protective layer to form the device with the ambient air Isolated from water vapor.
  • the ultraviolet luminescent layer comprises an ultraviolet luminescent material selected from the group consisting of cerium-containing materials, and at least one material selected from the group consisting of anilines and pentabenzenes.
  • the illuminating material comprises a structure as shown in the formula.
  • the ⁇ 3 ⁇ 4 ultraviolet luminescent material shown in Formula I has a band gap of 3,25 eV and an emission spectrum peak at 394 ⁇ m.
  • the pentabenzene UV luminescent material shown by ⁇ has a band gap of 3.48 eV and an emission spectrum peak at 310 ⁇ m.
  • the Barix protective layer is an alternating structure of the polymer layer and the inorganic dense cut-off layer as shown in FIG. 2 .
  • the structure of another electroluminescent diode of the present invention further includes:
  • a package cover comprising a flexible cover plate, a third protective layer and a desiccant layer arranged in sequence;
  • the structure of the third protective layer is composed of an organic polymer material or is formed by alternately laminating an organic polymer material and an inorganic material;
  • the encapsulating cover plate and the electroluminescent diode are arranged in a cleaving package at a distance between the desiccant layer and the outer side of the second protective layer in the direction in which the electroluminescent diode is disposed.
  • the third protective layer is a Bark layer
  • the polymer layer included may be at least one selected from the group consisting of: parylene, polychloro-p-xylene, polyethylene, poly Benzophenone, polypropylene, polyethylene terephthalate, polytetrafluoroethylene, soluble polytetrafluoroethylene, polyethylene terephthalate, polycarbonate, polymethyl methacrylate, polyvinyl acetate , polyethersulfone resin and polyimide:
  • the inorganic material may include TK) 2 , Mg ( : ), Si0 2 , Zr () 2 , ZnO, A1 2 0 3 , LiF, MgF 2 , ZnS, SiN x , Si(:) x N y , Si() x C y > DLC-like film DLC.
  • the package is packaged by an encapsulant, and the glue is usually cured by ultraviolet light or ultraviolet light.
  • the encapsulant is as shown in FIG.
  • the entire section can penetrate water vapor, oxygen, after doping the glass powder, due to the glass powder Occupying a certain area, the water vapor and oxygen permeation area are reduced, so that the permeation amount of water vapor and oxygen per unit time is reduced, and a better packaging effect is achieved.
  • the diameter of the glass powder should be between 0.01 and 100 microns, and the doping ratio in the UV-curable glue should not exceed 40%.
  • the purpose of doping the glass powder is to better prevent the water vapor and oxygen from entering the inside of the package; at the same time, the glass powder is transparent, and does not hinder the ultraviolet light of the encapsulating glue.

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  • Chemical & Material Sciences (AREA)
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  • Inorganic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

一种电致发光二极管器件，其包括：透明柔性基板（1），在所述柔性基板上顺次设置的第一保护层（2）、阳极（3）、空穴传输层（4）、紫外光发射层（5）、空穴阻挡层（6）、电子传输层（7）、阴极（8）以及第二保护层（9）；其中，所述紫外发光层包括的紫外发光材料选自含芴类，含三苯胺类和五联苯类中的至少一种材料。

Description

一种电致发光二极管器件 技术领域
本发明涉及电致发光二极管器件领域， 具体涉及一种电致发光二极管器件， 更具体 的， 涉及一种基于柔性基底的有机紫外电致发光二极管器件及其应用。 背景技术
紫外光是电磁波谱中波长从 l Onm到 400iim辐射的总称， 不能引起人们的视觉。 紫 外光源是以产生紫外辐射为主要目的的非照明用电光源， 其具有荧光效应、生物效应、 光 化学效应和光电效应， 适用于工业、农业、 国防和医疗等领域。 紫外光源具有紫外光的荧 光效应、生物效应、光化学效应等，在工业、农业、 国防和医疗等领域都有着广泛的应/¾。
紫外光在荧光效应上的应 ]¾主要是荧光分析，物质吸收紫外光后会发射出反应该物质 特性的荧光， 根据此荧光特性可以对该物质进行定性和定量分析。 具体的应用有： （1 ) 无机元素和有机物质的分析》 (2 ) 油层， 矿石， 药物， 食品及致癌物质的分析。 （3 )公 安部门侦查案件的辅助手段，可分析血迹、毒品等， 同时也可以辨别纸币、文件等的真伪。
(4) 零件探伤。 （5 ) 生物标记。 （6) 军用生物传感器。
紫外光在生物效应上的应用， 主要有： （1 ) 紫外光灭菌， 波长在 200〜275 rim之间 的紫外光都有灭菌作 ]¾， 但是不同波长的紫外光灭菌效果也不一样。 其中， 254〜257 iim 波长的紫外光的灭菌效果最好。紫外光照射的杀菌机理是使微生物细菌内核酸、原浆蛋白 和酶吸收了紫外光的能量后发生化学变化而死亡，其有广泛杀菌作用，能杀灭各种徵生物。
(2) 人体保健， 人类生活在阳光中的紫外线照射下， 可提高免疫力。 波长 280〜400 mn 波段的紫外光照射人体后，会对人全身各器官产生一定的积极作用，起到强身健体的作 ^。
( 3 ) 治疗疾病， 紫外光可以治疗皮肤病寻常性斑块状银屑病 （如牛皮癣和白瘫风等） 、 内科病 （如软骨病和小儿黄疽病等） 、 外科病 （如各种急性炎症）和神经科疾病等， 紫外 光自血回输疗法治晚期恶性肿瘤的研究， 灭活病毒等。 （4) 微生物诱变育种等。
紫外光在光化学效应上的应用， 波长在 200〜400 mil之间的紫外光所对应的能隙在 6.2〜3.1 eV之间， 许多化合物的化合键能都在此范围内， 吸收此能量可以引发很多化学 反应。 具体的应用有： （1 ) 可用于涂料、 颜料固化， 照相刺版、 晒版和复印， 半导体器 件的光刻和封装， 高分子材料的老化试验等。 （2)有机光化学反应， 在波长为 254〜400 nm 的紫外光照下， 有机物中的电子由基态跃迁到激发态， 发生光化学反应， 导致有机物 分解。 （3 )紫外光助氧化法处理 ΤΝΤ(Ξ:硝基甲苯） 废水以及紫夕卜光与自然光联合光催化 处理 UDMH (偏二甲胼)废水。
紫外光在农业畜牧业领域里也有着很重要的应用： （ 1 ) 波长 300〜400 nm之间的紫 外光对植物的生长也是必不可少的。 （2) 昆虫对波长 300〜400 nm之间的紫夕卜光非常敏 感， 可] ¾于诱杀农田里的害虫。 （3 ) 用紫外光对鸡舍畜圈灭菌， 对牲畜保健照射可以增 加牲畜的生长率、 产蛋率和减少生畜的死亡率。
此外， 紫外 /近紫外光还在泵浦染料发光， 白光照明以及高容量数据存储器等领域均 具有广泛的应用。
因此， 紫外光源在工农业生产及日常生活中具有广阔的应用前景。 自从 1935年世界 上第一支高压汞灯问世以来， 紫夕卜光源开始引起人们的广泛关注。五十年代以前， 汞灯是 唯一的人工紫外光源， 但并未能在实际中应^。 随着石英玻璃的问世、 封装技术的成熟、 电真空工业的发展和紫外光光谱技术的完善，紫外光源走向了真正有价值的应用阶段。除 了最早期的汞灯外，在五十年代末期陆续出现了一些新型的紫外光源。按灯的品种可划分 为- 汞弧灯、 金属卤素灯、 无极灯、 氙灯、 准分子紫外灯以及 UV发光二极管。 在这些 紫外光源中， 目前使用最多的是气态紫外光源，它存在着主体材料毒性大、存在二次污染、 器件使用不便旦易破碎等问题。
相比之下, 新兴的有机 UV发光二极管 (Ultraviolet-Organic Light Emitting Diode, UV-OLED) 具有环保、 低成本、 易大面积制作、 易与柔性基底集成等优点， 可弥补目前 紫外光源的不足。 尤其是柔性 OLED显示器件， 其不但柔软可以变形而且不易损坏， 可 以安装在弯曲的表面， 甚至可以设置于服装上， 因而日益成为国际显示行业的研究热点。 目前， 还没有发现基于柔性基底的有机紫外电致发光二极管器件的有关报道。 发明内容
本发明的目的在于提供一种环保、低成本、全固态的基于柔性基底的有机紫外电致发 光二极管器件，且可在柔性基地上实现紫外光源， 以弥补目前紫外光源以及使用不便等的 不足。
本发明的另一个目的在于提供了一种所述柔性基底的有机紫外电致发光二极管器件 的应用。
为实现上述目的， 本发明提供了一种电致发光二极管器件， 其包括- 透明柔性基板， 在所述柔性基板上顺次设置的第一保护层、 阳极、 空穴传输层、 紫夕卜 光发射层、 空穴阻挡层、 电子传输层以及阴极；
其中，所述紫外发光层包括的紫外发光材料选自含芴类，含:三苯胺类和五联苯类中的 至少一种材料。
在本发明的发光二极管中，所述阳极用于将空穴注入所述器件中；所述阴极用于将电 子注入所述器件中；所述空穴传输层包括空穴传输材料；所述电子传输层包括电子传输材 料； 所述电子和空穴在所述发光层复合后已达到发光的效果。
在本发明的一个优选实施方式中，所述紫外发光材料为包括结构如式 I所示含咔唑的 紫
Figure imgf000004_0001
在本发明的一个优选实施方式中， 所述透明柔性基板包括对紫外光弱吸收的透光村 料， 所述透光材料选自聚甲基丙烯酸甲酯、 聚己二酸乙二醇酯或聚碳酸酯中的至少一种[: 在本发明的一个优选实施方式中，所述第一保护层为由有机高分子材料构成或由有机 高分子材料层与无机材料层的交替层叠而钩成。
由于第一保护层的材料都需要能透过紫外光，因此其中所述有机高分子材料层可以 ffl 选自聚甲基丙烯酸甲酯、聚己二酸乙二醇酯或聚碳酸酯等的至少一种而构成，其中的无机 材料层可以由带隙不小于光学带隙为 3.96eV氮化硅的材料， 如氮化铝、 氮化硅、 氧化硅 等而构成。 氮化硅是常用的紫外器件透光介质。
在本发明的一个优选实施方式中， 所述器件还包括第二保护层， 其设置于阴极外侧， ϋ同时覆盖于所述器件的除所述透明柔性基板侧以外的其他外表面，用于与第一保护层配 合将所述器件与外界空气和水汽隔绝。
所述第二保护层为无机保护层。
所述无 保护层的材料选自以下物质中的至少一种： 为 Ti02、 MgO、 Si02、 Zr02、 ΖηΟ-, A1203、 LiF、 MgF2、 ZnS、 SiNx、 SiOxNy、 SiOxCy、 类金刚石薄膜 DLC。
在本发明的一个优选实施方式中， 所述电致发光二极管器件还包括：
封装盖板， 包括顺次设置的柔性盖板、 第:三保护层和干燥剂层；
所述第：三保护层的结钩 ffl有机高分子材料钩成或由有机高分子材料与无机材料的交 替层叠而钩成；
其中，所述封装盖板与所述电致发光二极管按照所述封装盖板的干燥剂层与所述电致 发:光二极管顺次设置的方^上的第二保护层的外侧相对间隔设置进行封装。
具体的，所述与第二柔性盖板可由相同柔性高分子材料构成。所述第 保护层的结构 与第一保护层的结构相同， 旦其中的有机高分子材料和无机材料与第一保护层有所不同。 在第≡保护层中， 所述有机高分子材料选自以下物质中的至少一种： 聚对二甲苯、聚氯对 二甲苯、 聚乙烯、 聚苯乙烯、 聚丙烯、 聚对苯二甲酸乙烯、 聚四氟乙烯、 可溶性聚四氟乙 烯、 聚苯二甲酸乙二醇酯、 聚碳酸酯、 聚甲基丙烯酸甲酯、 聚醋酸乙烯酯、 聚醚砜树脂和 聚酰亚胺； 所述无机材料包括为 Ti02、 MgO、 Si02、 Zr02、 ZnO、 Ai203、 LiF、 MgF2、 ZnS、 SiNx、 SiO^ y , SiOxCy、 类金 石薄膜 DLC。
所述封装通过封装胶进行封装，所述胶通常使用紫夕卜光固化胶，也可以是在紫外光固 化胶中掺杂玻璃粉而形成的封装胶。掺杂玻璃粉的目的是更好的阻止水汽、氧气迸入封装 体內部； 同时， 玻璃粉透光， 不会妨碍封装胶的紫外光照射固化。在垂直于水汽的渗透方 向上， 不掺杂玻璃粉之前， 整个截面都能渗透水汽、 氧气， 掺杂玻璃粉之后， 由于玻璃粉 占据了一定的面积， 使得水汽、氧气的渗透面积减少， A认而使得水汽、氧气单位时间的渗 透量降低， 达到了更好的封装效果。 玻璃粉的直径应该介于 0.01微米〜 100微米， 在紫夕卜 光固化胶中的掺杂比例不超过 40%, 以能够顺利完成胶材的涂布为宜。
在本发明的一个优选实施方式中，所述第一保护层的尺寸大于设置于第一保护层上的 其他层的尺寸，而设置于封装盖板上的第：三保护层的尺寸大于设置于第:三保护层上的其他 层的尺寸，如此，封装盖板与所述电致发光二极管之间的封装是通过封装胶将第一保护层 与第≡保护层进行封装， 从而将个实现器件发光所需的功能层， 如阳极、 空穴传输层、 紫 外发光层空穴阻挡层、 电子传输层、 阴极等封装在器件中而与外界的空气和水汽隔绝。
本发明还提供了一种所上述人一种电致发光二极管器件在杀菌、荧光分析或光化学反 应中的应用。
本发明的有益效果为-
( 1 ) 由于是全固态光源， 克服了目前常用的气态紫外光源存在的主体 料 （汞） 毒 性大、 存在二次污染、 器件使 ffl不便 易破碎等问题。
( 2 ) 气态紫外光源由于是真空器件， 所以器件尺寸很难做大， 常常是点光源或线光 源； 而紫外 OLED是平面光源， 可以制作成大面积器件。
( 3 ) 气态光源的起动电压为 220V , 而紫外 OLED的起动电压只有】 0V左右。 起动 电压大大降低的同时， 器件的功耗也显著降低， 电光转换效率大大提高。 (4 ) 柔性紫外 OLED平面光源， 具有可变形、 可折叠能力， 便于携带和使用。 图说明
图 1为本发明的一个优选实施方式中的电致发光二极管器件的结构示意图
图 2为本发明的一个优选实施方式中的第一保护层的结构示意图。
图 3为本发明的另一个优选实施方式中的电致发光二极管器件的结构示意图。
图 4为本发明的一个优选实施方式中的封装胶的示意图。
^图标记： 1-柔性基板、 2 -第一保护层、 3-阳极、 4-空穴传输层、 5-紫夕卜发光层、 6- 空穴阻挡层、 7-电子传输层、 8-阴极、 9-第二保护层、 10-无机层、 11聚合物层、 12-封装 胶、 13-柔性盖板、 i4-第三保护层、 15-千燥层、 16-玻璃粉。 具体实施方式
以下结合對图和实施例对本发明进行详细所说明，但需要理解的是本发明的范圈并不 限于以下实施例，在不脱离本发明的范围和精神的情况下，可以对其进行各种改迸并且可 以用等效物替换其中的部件。尤其是， 只要不存在结构冲突， 各个实施^中所提到的各项 技术特征均可以任意方式组合起来。
实施例 1
本发明的电致发:光器件结构如图 1所示， 下至上依次包括： 其包括- 透明柔性基板，选自聚甲基丙烯酸甲酯、聚己二酸乙二醇酯或聚碳酸酯中的至少一种； 第一保护层， 其为 barix层， 由有机高分子材料与无机材料的交替层叠而构成； 由于 第一保护层的材料都需要能透过紫外光，因此其中所述有机高分子材料可以选择聚甲基丙 烯酸甲酯、聚己二酸乙二醇酯或聚碳酸酯等，其中的无机材料可以选用带隙不小于光学带 隙为 3,96eV氮化硅的材料， 如氮化铝、 氮化硅、 氧化硅等。 氮化硅是常用的紫外器件透 光介质；
阳极， 其为 ΓΤΟ层；
空穴传输层， 由 Ν，Ν'-二苯基 - Ν,Ν'二 (3-甲基苯基)- Ι,Γ-联苯 4,4'二胺 (TPD)或 N，Nf- 二苯基 N,N'-(1-萘基 )-Uf-联苯- 4，4'二胺 (NPD)等空穴传输材料构成；
紫外光发射层；
空穴阻挡层， ffl 1,3,5-：三 (1-苯基- 1H-苯并咪唑- 2-基)苯 (TPBI)或 2,9-二甲基 -4,7-联苯 - 1，10-邻二氮杂菲 (BCP)等空穴阻挡材料构成；
电子传输层， 由:三 （8-羟基喹啉） 铝 （Alq3 ) 等电子传输材料构成： 阴极， 由 Al或 Ag等阴极材阜
第二保护层， 其为无机保护层， 选自以下物质中的至少一种： 为 TK)2、 MgO、 SK)2、 Zr02 , ZnO、 A{203 , UF、 MgF2、 ZnS、 SiNx、 SiOxNy, Si()xCy、 类金刚石薄膜 DLC;
其中，第二保护层其设置于阴极外侧，且同时覆盖于所述器件的除所述透明柔性基板 侧以外的其他外表面， 用于与第一保护层配合将所述器件与夕卜界空气和水汽隔绝。
其中，所述紫外发光层包括的紫外发光材料选自含芴类，含 苯胺类和五联苯类中的 至少一种材料； 优选的， 所述紫夕卜发光材料为包括结构如式 所示含咔唑的紫夕卜发光材料 或
Figure imgf000007_0001
式 I 式 II。
式 I所示的含咔 ¾紫外发光材料的带隙为 3,25eV, 发射光谱峰值在 394i m。
式： Π所示的五联苯紫外发光材料的带隙为 3.48eV, 发射光谱峰值在 310iim。
其中， Barix保护层是聚合物层与无机致密截止层的交替结构如图 2所示。
实施倒 2
如图 3所示,本发明的另一种电致发光二极管的结构在实施例 1中公开的结构的基础 上还包括：
封装盖板， 包括顺次设置的柔性盖板、 第三保护层和干燥剂层；
所述第三保护层的结构由有机高分子材料构成或由有机高分子材料与无机材料的交 替层叠而构成；
其中，所述封装盖板与所述电致发光二极管按照所述干燥剂层与所述电致发光二极管 顾次设置的方向上的第二保护层的外侧相对间隔设置迸行封装。
所述第三保护层为 Bark层，其包括的聚合物层 料可以是所述有机高分子 料选自 以下物质中的至少一种： 聚对二甲苯、 聚氯对二甲苯、 聚乙烯、 聚苯乙浠、 聚丙婦、 聚对 苯二甲酸乙烯、 聚四氟乙浠、 可溶性聚四氟乙烯、 聚苯二甲酸乙二醇酯、 聚碳酸酯、 聚甲 基丙烯酸甲酯、 聚醋酸乙烯酯、 聚醚砜树脂和聚酰亚胺： 所述无机材料可以包括为 TK)2、 Mg(:)、 Si02、 Zr()2、 ZnO、 A1203、 LiF、 MgF2、 ZnS、 SiNx、 Si(:)xNy、 Si()xCy > 类金刚石 薄膜 DLC。
所述封装通过封装胶进行封装，所述胶通常使用紫夕卜光固化胶，也可以是在紫外光固 化胶中掺杂玻璃粉而形成的封装胶。掺杂玻璃粉的目的是更好的阻止水汽、氧气进入封装 体内部； 同时， 玻璃粉透光， 不会妨碍封装胶的紫外:光照射固化。 在本实施例中， 所述封 装胶如图 4所示， 在垂直于水汽的渗透方向上， 不掺杂玻璃粉之前， 整个截面都能渗透水 汽、 氧气， 掺杂玻璃粉之后， 由于玻璃粉占据了一定的面积， 使得水汽、 氧气的渗透面积 减少， 从而使得水汽、氧气单位时间的渗透量降低， 达到了更好的封装效果。 玻璃粉的直 径应该介于 0.01〜100微米， 在紫外光固化胶中的掺杂比例不超过 40%。 掺杂玻璃粉的目 的是更好的阻止水汽、氧气进入封装体内部； 同时， 玻璃粉透光， 不会妨碍封装胶的紫夕卜 光照射圏化。

Claims

权利要求书
1. 一种电致发光二极管器件， 其包括- 透明柔性基板， 以及在所述柔性基板上顺次设置的第一保护层、 阳极、 空穴传输层、 紫外光发射层、 空穴阻挡层、 电子传输层以及阴极；
其中，所述紫夕卜发光层包括的紫夕卜发光材料选自含芴类、含:三苯胺类和五联苯类中的 至少一种材料 0
2. 根据要求 1所述的电致发光二极管器件， 其中， 所述紫外发光材料为包括结构如 式 料，
Figure imgf000009_0001
3. 根据权利要求 i所述的电致发光二极管器件， 其中， 所述透明柔性基板包括对紫 外光弱吸收的透:光材料，所述透光材料选自聚甲基丙婦酸甲酯、聚己二酸乙二醇酯或聚碳 酸酯中的至少一种。
4. 根据权利要求 2所述的电致发光二极管器件， 其中， 所述透明柔性基板包括对紫 外:光弱吸收的透光材料，所述透光材料选自聚甲基丙浠酸甲酯、聚己二酸乙二醇酯或聚碳 酸酯中的至少 ·种。
5. 根据权利要求 1所述的电致发光二极管器件， 其中， 所述第一保护层为由有机高 分子材料构成或由有机高分子材料层与无机材料层的交替层叠而构成。
6. 根据权利要求 2所述的电致发光二极管器件， 其中， 所述第一保护层为由有机高 分子材料构成或由有机高分子材料层与无机材料层的交替层叠而构成。
7. 根据权利要求 5所述的电致发光二极管器件， 其中， 所述有机高分子材料层由选 自聚甲基丙烯酸甲酯、聚己二酸乙二醇酯或聚碳酸酯中的至少一种而构成，其中的无机材 料层由选用带隙不小于光学带隙为 3.96eV的材料， 优选自氮化铝、 氮化硅或氧化硅中的 至少一种而构成。
8. 根据权利要求 6所述的电致发光二极管器件， 其中， 所述有 高分子材料层由选 自聚甲基丙烯酸甲酯、聚己二酸乙二醇酯或聚碳酸酯中的至少一种而构成，其中的无机材 料层由选用带隙不小于光学带隙为 3.96eV的材料， 优选自氮化铝、 氮化硅或氧化硅中的 至少一种而构成。
9. 根据权利要求〗所述的电致发光二极管器件， 其中， 所述器件还包括第二保护层， 其设置于阴极外侧，且同时覆盖于所述器件的除所述透明柔性基板以外的其他外表面，用 于与第一保护层配合将所述器件与外界空气和水汽隔绝。
10.根据权利要求 2所述的电致发光二极管器件，其中，所述器件还包括第二保护层， 其设置干阴极外侧，且同时覆盖于所述器件的除所述透明柔性基板以夕卜的其他夕卜表面，用 于与第一保护层配合将所述器件与外界空气和水汽隔绝。
11 . 根据权利要求 9所述的电致发光二极管器件， 其中， 所述第二保护层为无机保护 层。
12. 根据权利要求 10所述的电致发光二极管器件， 其中， 所述第二保护层为无机保 护层。
13. 根据权利要求 11所述的电致发光二极管器件， 其中， 所述无机保护层 料选自 以下物质中的至少一种: 为 Ti02、 MgO、 Si02、 Zr02、 ZnO、 Ai203、 LiF、 MgF2、 ZnS、 SiNx、 SiOxNy、 SiOxCy, 类金刚石薄膜 DLC。
14. 根据权利要求 12所述的电致发光二极管器件， 其中， 所述无机保护层材料选自 以下物质中的至少一种: 为 Ti02、 MgO、 Si02、 Zr02、 ZnO、 A1203、 LiF、 MgF2、 ZnS、 SiNr Si(:)xNy、 SiOxCy、 类金刚石薄膜 DLC。
15. 根据权利要求 1所述的电致发光二极管器件， 其中， 所述电致发光二极管器件还 包括：
封装盖板， 包括顺次设置的柔性盖板、 第≡保护层和干燥剂层；
所述第≡保护层的结构 有机高分子材料构成或由有机高分子材料与无机材料的交 替层叠而构成；
其中，所述封装盖板与所述电致发光二极管按照所述封装盖板的千燥剂层与所述电致 发光二极管顺次设置的方向上的第二保护层的外侧相对设置进行封装。
16. 根据权利要求 2所述的电致发光二极管器件， 其中， 所述电致发光二极管器件还 包括：
封装盖板， 包括顺次设置的柔性盖板、 第三保护层和干燥剂层；
所述第三保护层的结构由有机高分子材料构成或由有机高分子村料与无机材料的交 替层叠而钩成；
其中，所述封装盖板与所述电致发光二极管按照所述封装盖板的干燥剂层与所述电致 发:光二极管顺次设置的方 ^上的第二保护层的外侧相对设置进行封装。
17. 根据权利要求 15所述的电致发光二极管器件， 其中， 所述封装通过封装胶进行 封装， 所述封装胶为紫外:光固化胶或者为在紫外光固化胶中掺杂玻璃粉而形成的封装 胶。
18. 根据权利要求 16所述的电致发光二极管器件， 其中， 所述封装通过封装胶进行 封装， 所述封装胶为紫外光固化胶或者为在紫夕卜光固化胶中掺杂玻璃粉而形成的封装 胶。
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