WO2014201812A1 - 液晶显示面板及其制造方法 - Google Patents

液晶显示面板及其制造方法 Download PDF

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Publication number
WO2014201812A1
WO2014201812A1 PCT/CN2013/089085 CN2013089085W WO2014201812A1 WO 2014201812 A1 WO2014201812 A1 WO 2014201812A1 CN 2013089085 W CN2013089085 W CN 2013089085W WO 2014201812 A1 WO2014201812 A1 WO 2014201812A1
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Prior art keywords
spacer
liquid crystal
deformation layer
crystal display
display panel
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2013/089085
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English (en)
French (fr)
Inventor
韩帅
王春雷
陈俊生
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Beijing BOE Optoelectronics Technology Co Ltd
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Beijing BOE Optoelectronics Technology Co Ltd
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Application filed by Beijing BOE Optoelectronics Technology Co Ltd filed Critical Beijing BOE Optoelectronics Technology Co Ltd
Priority to US14/422,838 priority Critical patent/US10288951B2/en
Publication of WO2014201812A1 publication Critical patent/WO2014201812A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1341—Filling or closing of cells
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133512—Light shielding layers, e.g. black matrix
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133514—Colour filters
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1339—Gaskets; Spacers; Sealing of cells
    • G02F1/13394—Gaskets; Spacers; Sealing of cells spacers regularly patterned on the cell subtrate, e.g. walls, pillars
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6723—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device having light shields
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0251—Manufacture or treatment of multiple TFTs characterised by increasing the uniformity of device parameters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/451—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by the compositions or shapes of the interlayer dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1339—Gaskets; Spacers; Sealing of cells
    • G02F1/13398—Spacer materials; Spacer properties
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1341—Filling or closing of cells
    • G02F1/13415—Drop filling process

Definitions

  • Liquid crystal display panel and method of manufacturing the same
  • the present invention relates to the field of display technologies, and in particular, to a liquid crystal display panel and a method of fabricating the same. Background technique
  • the liquid crystal display panel is mainly composed of an array substrate, a color filter substrate, a liquid crystal layer between the two substrates, and the like.
  • a commonly used method is to first set a sealant on the manufactured array substrate, then inject a liquid crystal into the sealant, and finally form a liquid crystal display panel with the color filter substrate. .
  • Embodiments of the present invention provide a liquid crystal display panel and a method of fabricating the same that can repair vacuum bubbles, thereby increasing product yield.
  • a liquid crystal display panel including an array substrate and a color filter substrate formed on a box, and the array substrate and the color filter substrate are disposed on the substrate A liquid crystal layer and a spacer therebetween; wherein the spacer is internally provided with a deformation layer for expanding the spacer in a direction perpendicular to the thickness of the container under external conditions.
  • a method of fabricating a liquid crystal display panel includes disposing a spacer on the array substrate and/or a color filter substrate, wherein the spacer is internally provided with a deformation layer, and the deformation layer is used for external Conditioning the spacer to expand in a direction perpendicular to the thickness of the cell; and aligning the array substrate and the color filter substrate with the liquid crystal between the color filter substrate and the array substrate Material to form liquid crystal Floor.
  • Embodiments of the present invention provide a liquid crystal display panel including an array substrate and a color filter substrate formed on a box, and a liquid crystal layer disposed between the array substrate and the color filter substrate. And a spacer; the spacer comprising a deformation layer disposed inside the deformation layer for expanding the spacer in a direction perpendicular to the thickness of the case under external conditions; thus, when the liquid crystal display panel When a vacuum bubble is generated in the box, the deformation layer located at or near the portion of the vacuum bubble can be deformed in a direction perpendicular to the thickness of the box by externally stimulating the vicinity of the portion where the vacuum bubble is located, thereby providing the deformation layer inside.
  • the spacer expands in a direction perpendicular to the thickness of the case to fill the vacuum bubble, thereby solving the problem of defective vacuum bubbles in the liquid crystal display panel, thereby improving the product excellent rate.
  • FIG. 1 is a schematic view showing the deformation of a shape memory alloy according to an embodiment of the present invention
  • FIG. 2 is a schematic view showing the structure of a spacer disposed on a color filter substrate according to an embodiment of the present invention
  • FIG. 3 is a schematic structural view of a spacer disposed on an array substrate according to an embodiment of the present invention.
  • FIG. 4a is a schematic structural view of a liquid crystal display device including a shape memory alloy according to an embodiment of the present invention.
  • FIG. 4b is a schematic view showing a spacer of a liquid crystal display device including a shape memory alloy according to an embodiment of the present invention, which is expanded in a direction perpendicular to a thickness of a cell;
  • FIG. 5a is a schematic view showing the structure of a liquid crystal display device including a hardener carrier and a reactant in a liquid crystal display device according to an embodiment of the present invention
  • Figure 5b is a liquid including a hardener carrier and a reactant provided by an embodiment of the present invention.
  • 10-array substrate 101-thin film transistor; 20-color film substrate; 201-black matrix; 30-liquid crystal layer; 40-spacer; 50-deformation layer; 501-carrier; 502-reactant; 60-vacuum bubble.
  • the embodiment of the present invention provides a liquid crystal display panel.
  • the liquid crystal display panel includes an array substrate 10 and a color filter substrate 20 formed on the box, and is disposed between the array substrate 10 and the color filter substrate 20.
  • the present invention does not limit the material and pattern shape of the deformation layer 50, as long as the deformation layer 50 can expand the spacer 40 in a direction perpendicular to the thickness of the box under external conditions.
  • the external condition may be laser, microwave, temperature, brightness, etc., as long as the spacer 40 can be expanded according to the material of the deformation layer 50 or its composition.
  • An embodiment of the present invention provides a liquid crystal display panel, including an array substrate 10 and a color filter substrate 20 formed by a box, and a liquid crystal layer 30 and a spacer 40 disposed between the array substrate 10 and the color filter substrate 20; Also included is a deformation layer 50 disposed within the spacer 40 for expanding the spacer 40 in a direction perpendicular to the thickness of the cartridge under external conditions; thus in this embodiment When a vacuum bubble is generated in the cartridge of the liquid crystal display panel, the external condition is stimulated at or near the portion where the vacuum bubble is generated, so that the deformation layer 50 is disposed inside the portion at or near the portion.
  • the mat 40 is along a side perpendicular to the thickness of the box
  • the expansion is performed, and the vacuum bubbles are filled by the expansion of the spacer 40, thereby solving the problem of defective vacuum bubbles in the liquid crystal display panel, thereby improving the product excellent rate.
  • the material of the deformation layer 50 is a shape memory alloy.
  • the shape memory alloy may be, for example, a shape memory alloy having a one-way memory effect such as copper-zinc-gallium (Cu-Zn-Ga) or copper-zinc-tin (Cu-Zn-Sn).
  • the one-way memory effect is that the shape memory alloy is deformed at a lower temperature, and the shape before deformation can be restored after external conditions such as heating.
  • the shape memory alloy is required to expand in a direction perpendicular to the thickness of the container under external conditions such as a heating stimulus. Therefore, in the embodiment of the present invention, when the material of the deformation layer 50 is When the alloy is memorized, its shape is a shape at a lower temperature. Specifically, as illustrated in FIG. 1 , the shape of the deformation layer 50 (ie, the shape of the shape memory alloy) is shown, and the normal temperature state is cooled and deformed, and then deformed and contracted by cooling to be stimulated by external conditions.
  • the process of expansion that is, the shape memory alloy before cooling deformation
  • the shape of the shape memory alloy after cooling deformation shrinks in a direction perpendicular to the thickness of the case.
  • the shape of the shape memory alloy constituting the deformation layer 50 is the shape of the shape memory alloy after cooling
  • the deformation layer 50 is stimulated (for example, light)
  • the deformation layer 50 can be caused along Expanding perpendicular to the thickness of the box to achieve the purpose of expanding the spacer 40.
  • shape before cooling deformation of the shape memory alloy and the shape after cooling deformation in FIG. 1 are only schematic, and the shape of the shape memory alloy may be any shape that can be produced, as long as it can be cooled.
  • the shape memory alloy may be expanded in a direction perpendicular to the thickness of the case under external conditional stimulation.
  • a part of the pattern of the spacer 40 may be formed first, and then transferred.
  • a shape memory alloy of a specific shape is formed on a portion of the pattern of the spacer 40, and finally another portion of the spacer 40 is formed.
  • the deformation layer 50 may be disposed on the spacer 40 50% ⁇ 80% of the height.
  • the spacers 40 may be disposed on the black matrix, without lowering the aperture ratio of the liquid crystal display panel.
  • the spacer 40 is disposed on the array substrate 10 and disposed corresponding to the thin film transistor 101.
  • a portion of the spacers 40 may be formed on the black matrix on the color filter substrate 20 while other partial spacers 40 are disposed on the array substrate 10 corresponding to the thin film transistors 101.
  • the liquid crystal display panel includes a frame-formed array substrate 10 and a color filter substrate 20, a liquid crystal layer 30 disposed between the array substrate 10 and the color filter substrate 20, and a spacer 40, and a deformation layer 50 disposed at a height of 50% of the spacer 40, the deformation layer 50 is made of a shape memory alloy; wherein the array substrate 10 includes a thin film transistor 101, A spacer 40 is disposed at a position of the array substrate 10 corresponding to the thin film transistor 101.
  • the vacuum bubble 60 when the vacuum bubble 60 is present in the cartridge, only the spacer 40 in the vicinity of the vacuum bubble 60 may be subjected to external condition stimulation such as laser irradiation to make the shape memory alloy material disposed inside the spacer 40.
  • the deformation layer 50 is deformed in a direction perpendicular to the thickness of the box, so that the spacer 40 is expanded in a direction perpendicular to the thickness of the case, as shown in Fig. 4b, due to the expansion of the volume of the spacer 40, the increase The volume can fill the void caused by the original vacuum bubble, thereby solving the problem of poor vacuum bubbles in the liquid crystal display panel.
  • the deformation layer 50 is disposed at 50% of the height of the spacer 40, it is possible to cause only the volume expansion of the intermediate portion of the spacer 40, and the spacer 40 and the array substrate 10 and The contact area of the color filter substrate 20 is not changed, so that the occurrence of other defects can be effectively avoided.
  • the deformation layer 50 may include a carrier 501 made of a hardener and a reaction filled in the carrier 501. Matter 502. The reactant 502 can undergo a chemical reaction under external conditions to form a product 503 capable of expanding the spacer 40 in a direction perpendicular to the thickness of the container.
  • the reactant 502 may further include a catalyst for promoting the reaction, etc., and may be specifically set according to actual conditions, which is not limited herein.
  • the amount of the reactant 502 and the manner in which the carrier 501 is placed are not limited herein, so that when the reactant 502 is filled in the carrier 501 made of the hardener, the reactant 502 occurs under external conditions.
  • the product 503 can expand the spacer 40 in a direction perpendicular to the thickness of the case, but at the same time, does not affect the effect of the spacer 40 for maintaining the thickness of the case. .
  • the spacer 40 in the vicinity of the vacuum bubble 60 is subjected to external condition stimulation (for example, microwave high-frequency oscillation, or laser local high-temperature illumination), as shown in FIG. 5b.
  • external condition stimulation for example, microwave high-frequency oscillation, or laser local high-temperature illumination
  • the direction needs to coincide with the direction perpendicular to the thickness of the cell, so that the reactant 502 reacts along the length direction of the carrier 501, so that the resultant product 503 obtained by the reaction is thicker along the cell in the carrier 501 made of the hardener.
  • the direction is perpendicular to the direction of expansion, so that the spacer 40 expands in a direction perpendicular to the thickness of the box, so that the increased volume can fill the void caused by the original vacuum bubble, thereby solving the problem of poor vacuum bubbles in the liquid crystal display panel. .
  • the product 503 preferably includes a melamine resin, or a urea resin, or a polystyrene resin, or polyethylene ethanol.
  • the reactants 2, 4, 6-triamino-1, 3, 5-tri- 11 and furfural are subjected to laser irradiation under acid catalysis to form a melamine resin.
  • the reactant 502 before the reaction is placed in the carrier 501 made of the hardener, it is isolated from the outside, and does not cause pollution; after the reaction occurs, the above-mentioned product 503 and the currently used one are used.
  • the composition of the spacer 40 Similarly, it is also possible to avoid the introduction of impurities to cause contamination of the liquid crystal.
  • the embodiment of the invention further provides a method for manufacturing a liquid crystal display panel, which comprises:
  • a spacer 40 is disposed on the array substrate 10 and/or the color filter substrate 20, and the spacer 40 is internally provided with a deformation layer 50 for using the spacer 40 under external conditions. Expanding in a direction perpendicular to the thickness of the box;
  • the array substrate 10 and the color filter substrate 20 are paired, and a liquid crystal material is filled between the color filter substrate 20 and the array substrate 10 to form a liquid crystal layer 30.
  • the spacers 40 may be disposed on the black matrix, without lowering the aperture ratio of the liquid crystal display panel.
  • the spacer 40 is disposed on the array substrate 10 and disposed corresponding to the thin film transistor 101.
  • a portion of the spacers 40 may be formed on the black matrix on the color filter substrate 20 while other partial spacers 40 are disposed on the array substrate 10 corresponding to the thin film transistors 101.
  • the deformation layer 50 is formed at a height of 50% to 80% of the spacer 40.
  • the spacer 40 When the spacer 40 is formed on the array substrate 10 and a deformation layer 50 of a shape memory alloy material is formed inside the spacer 40, the deformation layer
  • the formation of 50 at a height of 50% - 80% of the spacer may specifically include the following steps:
  • a pattern of the deformation layer 50 of a shape memory alloy material is formed on the first spacer pattern by a transfer technique.
  • the shape of the deformation layer formed by the shape memory alloy particles herein may be, for example, the shape deformed at a lower temperature in FIG. 1, and may be other shapes as long as the deformation layer can be stimulated by external conditions. , it can be expanded in a direction perpendicular to the thickness of the box.
  • a second spacer pattern having a remaining height of 20% to 50% is formed by one patterning process. Wherein the first spacer pattern and the second spacer pattern together constitute the spacer 40.
  • the 50% - 80% height can specifically include the following steps:
  • a pattern of the deformation layer 50 of a shape memory alloy material is formed on the first spacer pattern by a transfer technique.
  • step S203 on the color film substrate 20 of the above step S202, forming a second spacer pattern of the remaining 20% to 50% height by one patterning process.
  • the first spacer pattern and the second spacer pattern constitute the spacer 40.
  • the shape memory alloy can be, for example: copper-zinc-gallium
  • Cu-Zn-Ga copper-zinc-tin
  • Cu-Zn-Sn copper-zinc-tin
  • the spacer 40 when the spacer 40 is formed on the array substrate 10, a carrier 501 including a hardener and a reaction of the reactant 502 filled in the carrier 501 are formed inside the spacer 40.
  • the deformation layer 50 is formed at a height of 50% to 80% of the spacer 40, and may specifically include the steps of: 5301. Form a first spacer pattern on the array substrate 10 at a height of 50% to 80% of the spacer 40 by one patterning process.
  • a carrier 501 made of a hardener filled with the reactant 502 is placed on the first spacer pattern, and the length direction of the carrier 501 is perpendicular to The direction of the box thickness is the same.
  • the hardening agent can be made into a first carrier 501, for example, cylindrical, and the reaction was 502 e.g. 2, 4, 6-triamino-1, 3, 5-11 Qin, Yue aldehyde and an acid catalyst into the In the carrier 501, the axis of the carrier 501 filled with the reactant 502 is then placed on the first spacer pattern in a direction perpendicular to the thickness of the container.
  • a first carrier 501 for example, cylindrical
  • the reaction was 502 e.g. 2, 4, 6-triamino-1, 3, 5-11 Qin, Yue aldehyde and an acid catalyst into the In the carrier 501
  • the axis of the carrier 501 filled with the reactant 502 is then placed on the first spacer pattern in a direction perpendicular to the thickness of the container.
  • a second spacer pattern having a height of 20% to 50% is formed by one patterning process.
  • the first spacer pattern and the second spacer pattern constitute the spacer 40.
  • the spacer 40 in the vicinity of the bubble can be locally stimulated by external conditions such as laser irradiation, so that the The reactant 502 in the carrier 501 chemically reacts to form a melamine resin, since the chemical reaction occurs in the direction of the axis of the carrier 501, and the axis is placed in a direction perpendicular to the thickness of the cell, such that the reactant 503 is melamine.
  • Resin extends from both ends of the carrier 501 such that the spacer 40 expands in a direction perpendicular to the thickness of the container.
  • a carrier 501 including a hardener and a reactant 502 filled in the carrier are formed inside the spacer 40.
  • the case of the deformation layer 50 is similar to the above S301-S303, and will not be described herein.

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Liquid Crystal (AREA)
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Abstract

一种液晶显示面板及其制造方法，液晶显示面板包括对盒成形的阵列基板（10）和彩膜基板（20）、以及设置在阵列基板（10）和彩膜基板（20）之间的液晶层（30）和隔垫物（40），其中，隔垫物（40）内部设置有形变层（50），形变层（50）用于在外部条件作用下沿垂直于盒厚的方向膨胀，从而修复真空气泡，增加产品良率。

Description

液晶显示面板及其制造方法 技术领域
本发明涉及显示技术领域，尤其涉及液晶显示面板及其制造 方法。 背景技术
液晶显示面板主要由阵列基板、彩膜基板、 以及位于两基板 之间的液晶层等构成。在液晶显示面板制造过程中， 比较常用的 方法是， 在制造好的阵列基板上先设置封框胶， 然后在封框胶内 注入液晶， 最后与所述彩膜基板对盒， 形成液晶显示面板。
然而在液晶显示面板的制造过程中，由于存在液晶滴头滴量 误差、液晶量估算不足等原因，会导致液晶滴入不足。这样的话， 在阵列基板和彩膜基板对盒后，盒内产生真空气泡而导致显示不 良的发生。 发明内容
本发明的实施例提供了液晶显示面板及其制造方法，可修复 真空气泡， 从而增加产品良率。
为达到上述目的， 本发明的实施例采用如下技术方案： 一方面，提供一种液晶显示面板， 包括对盒成形的阵列基板 和彩膜基板、以及设置在所述阵列基板和所述彩膜基板之间的液 晶层和隔垫物； 其中， 所述隔垫物内部设置有形变层， 所述形变 层用于在外部条件作用下使所述隔垫物沿垂直于盒厚的方向膨 胀。
一方面，提供一种液晶显示面板的制造方法， 包括在所述阵 列基板和 /或彩膜基板上设置隔垫物， 所述隔垫物内部设置有形 变层，所述形变层用于在外部条件作用下使所述隔垫物沿垂直于 盒厚的方向膨胀； 和将所述阵列基板和所述彩膜基板对盒， 并向 所述彩膜基板和所述阵列基板之间充入液晶材料， 以形成液晶 层。
本发明实施例提供了一种液晶显示面板及其制造方法，该液 晶显示面板包括对盒成形的阵列基板和彩膜基板、以及设置在所 述阵列基板和所述彩膜基板之间的液晶层和隔垫物；隔垫物包括 设置在其内部的形变层，所述形变层用于在外部条件作用下使所 述隔垫物沿垂直于盒厚的方向膨胀； 这样， 当该液晶显示面板的 盒内产生真空气泡时，可以通过对该真空气泡所在部位附近进行 外部条件刺激，使位于该部位处或附近的形变层沿垂直于盒厚的 方向发生形变，从而使内部设置有该形变层的隔垫物沿垂直于盒 厚的方向发生膨胀， 以填充真空气泡， 进而解决液晶显示面板中 存在真空气泡不良的问题， 提高产品优良率。 附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案， 下面将对实施例或现有技术描述中所需要使用的附图作筒单地 介绍，显而易见地， 下面描述中的附图仅仅是本发明的一些实施 例， 对于本领域普通技术人员来讲， 在不付出创造性劳动的前提 下， 还可以根据这些附图获得其他的附图。
图 1为本发明实施例提供的形状记忆合金的形变示意图； 图 2为本发明实施例提供的彩膜基板上设置隔垫物的结构 示意图；
图 3为本发明实施例提供的阵列基板上设置隔垫物的结构 示意图；
图 4a为本发明实施例提供的包括形状记忆合金的液晶显示 装置中具有真空气泡的结构示意图；
图 4b为本发明实施例提供的包括形状记忆合金的液晶显示 装置的隔垫物沿垂直于盒厚的方向膨胀的示意图；
图 5a为本发明实施例提供的包括硬化剂载体和反应物的液 晶显示装置中具有真空气泡的结构示意图； 和
图 5b为本发明实施例提供的包括硬化剂载体和反应物的液 晶显示装置的隔垫物沿垂直于盒厚的方向膨胀的示意图。
附图标记：
10-阵列基板； 101-薄膜晶体管； 20-彩膜基板； 201-黑矩阵； 30-液晶层； 40-隔垫物； 50-形变层； 501-载体； 502-反应物； 503- 生成物； 60-真空气泡。 具体实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技 术方案进行清楚、 完整地描述， 显然， 所描述的实施例仅仅是本 发明一部分实施例， 而不是全部的实施例。基于本发明中的实施 例，本领域普通技术人员在没有做出创造性劳动前提下所获得的 所有其他实施例， 都属于本发明保护的范围。
本发明实施例提供了一种液晶显示面板， 如图 4a所示， 该 液晶显示面板包括对盒成形的阵列基板 10和彩膜基板 20、 以及 设置在阵列基板 10和彩膜基板 20之间的液晶层 30和隔垫物 40; 其中， 在所述隔垫物 40内部设置有形变层 50, 所述形变层 50 用于在外部条件作用下使所述隔垫物沿垂直于盒厚的方向膨胀。
需要说明的是： 首先， 本发明不对形变层 50的材料、 图案 形状进行限定， 只要该形变层 50能在外部条件作用下能使所述 隔垫物 40沿垂直于盒厚的方向膨胀即可； 其次， 第二， 所述外 部条件可以是激光、 微波、 温度、 亮度等， 只要能根据所述形变 层 50的材料或其组成， 使所述隔垫物 40发生膨胀即可。
本发明实施例提供了一种液晶显示面板，包括对盒成形的阵 列基板 10和彩膜基板 20、 以及设置在阵列基板 10和彩膜基板 20之间的液晶层 30和隔垫物 40;进一步还包括设置在所述隔垫 物 40内部的形变层 50, 所述形变层 50用于在外部条件作用下 使所述隔垫物 40沿垂直于盒厚的方向膨胀；这样在该实施例中， 当该液晶显示面板的盒内产生真空气泡时，便可以通过对该产生 真空气泡的部位处或其附近进行外部条件刺激，使位于该部位处 或附近的内部设置有该形变层 50的隔垫物 40沿垂直于盒厚的方 向发生膨胀， 并从而利用隔垫物 40的膨胀进行占位来填充真空 气泡， 进而解决液晶显示面板中存在真空气泡不良的问题，提高 产品优良率。
优选的， 所述形变层 50的材质为形状记忆合金。 其中， 该 形状记忆合金例如可以为： 铜-锌-镓（ Cu-Zn-Ga ) 、 铜-锌-锡 ( Cu-Zn-Sn ) 等具有单程记忆效应的形状记忆合金。
其中，单程记忆效应即为，形状记忆合金在较低的温度下变 形， 并在外界条件刺激例如加热后可恢复变形前的形状。在本发 明实施例中， 由于在外部条件例如加热刺激下， 需要所述形状记 忆合金沿垂直于盒厚的方向膨胀， 因此， 本发明实施例中， 当所 述形变层 50的材质为所述记忆合金时， 其形状为较低温度下的 形状。 具体地， 图示例的， 如图 1所示， 示出了形变层 50的形 状（即形状记忆合金的形状）常温态受冷却而变形收缩、 再由受 冷却而变形收缩到受外部条件刺激而膨胀的过程， 也就是说，相 对冷却变形前的所述形状记忆合金，冷却变形后的所述形状记忆 合金的形状沿垂直于盒厚的方向发生收缩。这样， 当构成所述形 变层 50的形状记忆合金的形状为冷却后的所述形状记忆合金的 形状时， 在对该形变层 50进行刺激 （例如， 光照） 时， 便可使 形变层 50沿垂直于盒厚的方向膨胀，达到使所述隔垫物 40膨胀 的目的。
需要说明的是，附图 1中所述形状记忆合金冷却形变前的形 状和冷却形变后的形状仅为示意，对于所述形状记忆合金的形状 可以为任意可以制作的形状，只要能使冷却后的所述形状记忆合 金在外部条件刺激下， 沿垂直于盒厚的方向膨胀即可。
对于设置在所述隔垫物 40内部的形变层 50的形状记忆合金 的形状， 例如可以在制造所述隔垫物 40的过程中， 先形成所述 隔垫物 40的一部分图形， 然后通过转印技术， 将特定形状的形 状记忆合金形成在所述隔垫物 40的一部分图形上， 最后再形成 所述隔垫物 40的另一部分。
进一步优选的， 可以将所述形变层 50设置在所述隔垫物 40 的 50% ~ 80%的高度处。
这样， 可以只引起所述隔垫物 40中间部位的体积膨胀， 而 与所述阵列基板 10和彩膜基板 20的接触面积不发生改变，可以 有效避免其他不良的发生。
进一步地， 在彩膜基板 20上设置有黑矩阵的实施方式中， 如图 2所示， 可以将所述隔垫物 40设置在黑矩阵上， 从而不降 低液晶显示面板的开口率。
优选地， 如图 3所示， 所述隔垫物 40设置在所述阵列基板 10上， 并与薄膜晶体管 101对应设置。
优选地， 可以在彩膜基板 20上的黑矩阵上形成一部分隔垫 物 40, 同时在阵列基板 10上与薄膜晶体管 101相对应地设置其 他部分隔垫物 40。
对于所述液晶显示面板的结构， 如图 4a所示， 该液晶显示 面板包括对盒成形的阵列基板 10和彩膜基板 20、设置在阵列基 板 10和彩膜基板 20之间的液晶层 30和隔垫物 40、 以及设置在 所述隔垫物 40的 50%高度处的形变层 50, 所述形变层 50的材 质为形状记忆合金；其中，所述阵列基板 10包括薄膜晶体管 101 , 所述隔垫物 40设置在所述阵列基板 10的与所述薄膜晶体管 101 对应的位置处。
参考图 4a, 当盒内存在真空气泡 60时， 可以仅对该真空气 泡 60附近的隔垫物 40进行外部条件刺激例如激光照射，使设置 在所述隔垫物 40内部的形状记忆合金材质的形变层 50沿垂直于 盒厚的方向发生形变， 从而使所述隔垫物 40沿垂直于盒厚的方 向膨胀， 如图 4b所示， 由于所述隔垫物 40体积发生膨胀， 增大 的体积便可以填充原真空气泡引起的空洞，进而解决液晶显示面 板中存在真空气泡不良的问题。
此外， 由于所述形变层 50设置在所述隔垫物 40的 50%高 度处， 因此能够只引起所述隔垫物 40中间部位的体积膨胀， 而 隔垫物 40与所述阵列基板 10和彩膜基板 20的接触面积不发生 改变， 从而可以有效避免其他不良的发生。 作为另一种实施例， 代替以形状记忆合金构成形变层 50, 如图 5a及 5b所示， 所述形变层 50可以包括由硬化剂制成的载 体 501和填充在所述载体 501中的反应物 502。 所述反应物 502 可以在外部条件作用下发生化学反应以生成生成物 503 , 所述生 成物 503能够使所述隔垫物 40沿垂直于盒厚的方向膨胀。
需要说明的是，所述反应物 502还可以包括促进反应的催化 剂等， 具体可以根据实际情况进行设定， 在此不做限定。 此外， 对于反应物 502的量以及所述载体 501的放置方式，在此也不做 限定， 以当填充在所述硬化剂制成的载体 501中的只要反应物 502在外部条件作用下， 发生化学反应以生成生成物 503时、 且 该生成物 503能使所述隔垫物 40沿垂直于盒厚的方向膨胀、 但 同时不影响所述隔垫物 40用于维持盒厚的作用即可。
参考图 5a所示， 当盒内存在真空气泡 60时， 对该真空气泡 60附近的隔垫物 40进行外部条件刺激（例如微波高频振荡， 或 者激光局部高温照射）， 参考图 5b所示， 由硬化剂的物理性能， 放置在载体 501其内部的反应物 502发生反应时，载体 501会沿 着阻力相对较小的方向进行发生形变， 因此， 此处将所述载体 501设置为其的长度方向需与垂直于盒厚的方向一致， 以使反应 物 502沿所述载体 501的长度方向发生反应，从而使反应得到的 生成物 503在所述硬化剂制成的载体 501中沿与盒厚方向垂直的 方向膨胀， 从而使所述隔垫物 40沿垂直于盒厚的方向膨胀， 如 此增大的体积便可以填充原真空气泡引起的空洞，进而解决液晶 显示面板中存在真空气泡不良的问题。
进一步地，所述生成物 503优选包括密胺树脂，或尿素树脂， 或聚苯乙烯树脂， 或聚乙烯乙醇。
例如， 反应物 2, 4, 6-三氨基 -1 , 3 , 5-三11秦和曱醛在酸催 化作用下进行激光照射， 反应生成密胺树脂。
这样，由于发生反应前的反应物 502放置在所述硬化剂制成 的载体 501中， 而与外界隔绝， 不会造成污染； 在发生反应后， 由于上述的生成物 503与目前一般使用的所述隔垫物 40的组成 相似， 也可以避免引入杂质而造成对液晶的污染。
本发明实施例还提供了一种液晶显示面板的制造方法， 包 括：
在阵列基板 10和 /或彩膜基板 20上设置隔垫物 40, 所述隔 垫物 40内部设置有形变层 50, 所述形变层 50用于在外部条件 作用下使所述隔垫物 40沿垂直于盒厚的方向膨胀；
将阵列基板 10和彩膜基板 20对盒， 并向彩膜基板 20和阵 列基板 10之间充入液晶材料， 以形成液晶层 30。
进一步地， 在彩膜基板 20上设置有黑矩阵的实施方式中， 如图 2所示， 可以将所述隔垫物 40设置在黑矩阵上， 从而不降 低液晶显示面板的开口率。
优选地， 如图 3所示， 所述隔垫物 40设置在所述阵列基板 10上， 并与薄膜晶体管 101对应设置。
优选地， 可以在彩膜基板 20上的黑矩阵上形成一部分隔垫 物 40, 同时在阵列基板 10上与薄膜晶体管 101相对应地设置其 他部分隔垫物 40。
优选的，所述形变层 50形成在所述隔垫物 40的 50% ~ 80% 的高度处。
当所述隔垫物 40形成在所述阵列基板 10上，且在所述隔垫 物 40内部形成形状记忆合金材质的形变层 50时， 所述形变层
50形成在所述隔垫物的 50% - 80%的高度处具体可以包括如下 步骤：
S101、 在所述阵列基板 10上， 通过一次构图工艺在隔垫物 40的 50% - 80%的高度处形成第一隔垫物图案。
S102、 在完成上述步骤 S101的阵列基板 10上， 在所述第 一隔垫物图案上通过转印技术形成形状记忆合金材质的所述形 变层 50的图案。
此处，具体的可以为： 将带有形状记忆合金微粒的印版表面 与所有所述第一隔垫物图案接触，其中在每个所述第一隔垫物图 案位置对应处有相应大小、数目的印版微孔， 用于提供形状记忆 合金微粒。 在所述阵列基板 10背面， 转印电极的电场给所述阵 列基板 10充以比印版更多的电荷， 把在印版表面上形状记忆合 金微粒吸附转移到第一隔垫物上。其中， 此处的形状记忆合金微 粒形成的形变层的形状例如可以参考附图 1中的在较低温度下 变形后的形状， 当然也可以是其他形状， 只要该形变层可以在外 部条件刺激下， 沿垂直于盒厚的方向膨胀即可。
S103、 在完成上述步骤 S102的阵列基板 10上， 通过一次 构图工艺形成剩余 20% ~ 50%高度的第二隔垫物图案。 其中， 所 述第一隔垫物图案与所述第二隔垫物图案一起构成所述隔垫物 40。
当所述隔垫物 40形成在所述彩膜基板 20上时，且在所述隔 垫物 40内部形成形状记忆合金材质的形变层 50时，所述形变层 50形成在所述隔垫物的 50% - 80%的高度处具体可以包括如下 步骤：
S201、在所述彩膜基板 20上通过一次构图工艺在隔垫物 40 的 50% ~ 80%高度处形成第一隔垫物图案。
S202、 在完成上述步骤 S201的彩膜基板 20上， 在所述第 一隔垫物图案上通过转印技术形成形状记忆合金材质的所述形 变层 50的图案。
S203、 在完成上述步骤 S202的彩膜基板 20上， 通过一次 构图工艺形成剩余的 20% ~ 50%高度的第二隔垫物图案。 其中， 所述第一隔垫物图案与所述第二隔垫物图案构成所述隔垫物 40。
优选的， 所述形状记忆合金例如可以为： 铜-锌-镓
( Cu-Zn-Ga ) 、 铜-锌-锡（ Cu-Zn-Sn )等具有单程记忆效应的形 状记忆合金。
对于， 当所述隔垫物 40形成在所述阵列基板 10上，且在所 述隔垫物 40内部形成包括硬化剂制成的载体 501以及填充在所 述载体 501中的反应物 502的形变层 50时，所述形变层 50形成 在所述隔垫物 40的 50% ~ 80%的高度处具体可以包括步骤： 5301、 在所述阵列基板 10上， 通过一次构图工艺在隔垫物 40的 50% ~ 80%高度处形成第一隔垫物图案。
5302、 在完成上述步骤 S301的阵列基板 10上， 将填充有 所述反应物 502的硬化剂制成的载体 501放置在所述第一隔垫物 图案上， 且载体 501的长度方向与垂直于盒厚的方向一致。
具体的， 可以先将硬化剂制作成例如圆柱形的载体 501 , 将 反应物 502例如 2, 4, 6-三氨基 -1 , 3 , 5-三11秦、 曱醛和酸催化 剂放入所述载体 501中， 然后将填充有所述反应物 502的载体 501的轴沿垂直于盒厚的方向放置在所述第一隔垫物图案上。
5303、 在完成上述步骤 S302的阵列基板 10上， 通过一次 构图工艺形成剩余 20% ~ 50%高度的第二隔垫物图案。 其中， 所 述第一隔垫物图案与所述第二隔垫物图案构成所述隔垫物 40。
这样， 当所述阵列基板 10和所述彩膜基板 20对盒后， 盒内 有真空气泡存在时， 可在局部对该气泡附近的隔垫物 40进行例 如激光照射的外部条件刺激，使得位于所述载体 501中的反应物 502发生化学反应生成密胺树脂， 由于该化学反应沿所述载体 501的轴的方向发生， 且该轴沿垂直于盒厚的方向放置， 使得反 应物 503密胺树脂从所述载体 501两端延伸出来，从而使所述隔 垫物 40沿垂直于盒厚的方向膨胀。
同理， 当所述隔垫物 40形成在所述彩膜基板 20上，且在所 述隔垫物 40内部形成包括硬化剂制成的载体 501以及填充在所 述载体中的反应物 502的形变层 50的情况， 与上述 S301-S303 类似， 在此不再赘述。
以上所述，仅为本发明的具体实施方式，但本发明的保护范 围并不局限于此，任何熟悉本技术领域的技术人员在本发明揭露 的技术范围内， 可轻易想到变化或替换， 都应涵盖在本发明的保 护范围之内。 因此， 本发明的保护范围应以所述权利要求的保护 范围为准。

Claims

权利要求书
1、 一种液晶显示面板， 包括对盒成形的阵列基板和彩膜基 板、以及设置在所述阵列基板和所述彩膜基板之间的液晶层和隔 垫物； 其特征在于， 所述隔垫物的内部设置有形变层， 所述形变 层用于在外部条件作用下使所述隔垫物沿垂直于盒厚的方向膨 胀。
2、 根据权利要求 1所述的液晶显示面板， 其特征在于， 所 述形变层的材质为形状记忆合金。
3、 根据权利要求 2所述的液晶显示面板， 其特征在于， 所 述形变层的材质为具有单程记忆效应的形状记忆合金。
4、 根据权利要求 1所述的液晶显示面板， 其特征在于， 所 述形变层包括由硬化剂制成的载体、以及填充在所述载体中的反 应物；其中所述反应物在外部条件作用下发生化学反应以生成生 成物， 所述生成物使所述隔垫物沿垂直于盒厚的方向膨胀。
5、 根据权利要求 4所述的液晶显示面板， 其特征在于， 所 述生成物包括密胺树脂， 或尿素树脂， 或聚苯乙烯树脂， 或聚乙 烯乙醇。
6、 根据权利要求 1至 5任一项所述的液晶显示面板， 其特 征在于， 所述形变层设置在所述隔垫物的 50% ~ 80%的高度处。
7、 根据权利要求 1至 6中任一项所述的液晶显示面板， 其 特征在于， 所述隔垫物设置在所述彩膜基板上和 /或所述阵列基 板上。
8、 根据权利要求 7所述的液晶显示面板， 其特征在于， 所 述隔垫物设置在形成于所述彩膜基板上的黑矩阵上； 和 /或所述 隔垫物设置在所述阵列基板上与所述薄膜晶体管对应的位置处。
9、 一种液晶显示面板的制造方法， 其特征在于， 所述制造 方法包括：
在所述阵列基板和 /或所述彩膜基板上设置隔垫物， 所述隔 垫物内部设置有形变层，所述形变层在外部条件作用下使所述隔 垫物沿垂直于盒厚的方向膨胀； 和
将所述阵列基板和所述彩膜基板对盒，并向所述彩膜基板和 所述阵列基板之间充入液晶材料， 以形成液晶层。
10、 根据权利要求 9所述的制造方法， 其特征在于， 所述形 变层形成在所述隔垫物的 50% ~ 80%的高度处。
11、 根据权利要求 10所述的制造方法， 其特征在于， 所述 形变层形成在所述隔垫物的 50% ~ 80%的高度处包括：
在所述阵列基板和 /或所述彩膜基板上， 通过一次构图工艺 在所述隔垫物的 50% ~ 80%的高度处形成第一隔垫物图案；
在所述第一隔垫物图案上通过转印技术形成形状记忆合金 材质的所述形变层的图案， 并通过一次构图工艺形成剩余的 20% ~ 50%高度的第二隔垫物图案；
其中，所述第一隔垫物图案与所述第二隔垫物图案构成所述 隔垫物。
12、 根据权利要求 10所述的制造方法， 其特征在于， 所述 形变层形成在所述隔垫物的 50% ~ 80%的高度处包括：
在所述阵列基板和 /或所述彩膜基板上， 通过一次构图工艺 在所述隔垫物的 50% ~ 80%的高度处形成第一隔垫物图案；
在所述第一隔垫物图案上放置填充有反应物的硬化剂载体， 所述填充有反应物的硬化剂载体形成所述形变层； 其中， 所述反 应物在外部条件作用下发生化学反应以生成生成物，所述生成物 使所述隔垫物沿垂直于盒厚的方向膨胀；
通过一次构图工艺形成剩余的 20% ~ 50%高度的第二隔垫 物图案；
其中，所述第一隔垫物图案与所述第二隔垫物图案构成所述 隔垫物。
13、 根据权利要求 11所述的制造方法， 其特征在于， 所述 形状记忆合金材质为具有单程记忆效应的形状记忆合金。
14、 根据权利要求 9至 13中任意一项所述的制造方法， 其 特征在于， 所述隔垫物设置在形成于所述彩膜基板上的黑矩阵 上； 和 /或所述隔垫物设置在所述阵列基板上与所述薄膜晶体管 对应的位置处。
PCT/CN2013/089085 2013-06-20 2013-12-11 液晶显示面板及其制造方法 Ceased WO2014201812A1 (zh)

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