WO2014194637A1 - Substrat en réseau, panneau d'affichage à cristaux liquides et dispositif d'affichage - Google Patents

Substrat en réseau, panneau d'affichage à cristaux liquides et dispositif d'affichage Download PDF

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Publication number
WO2014194637A1
WO2014194637A1 PCT/CN2013/089462 CN2013089462W WO2014194637A1 WO 2014194637 A1 WO2014194637 A1 WO 2014194637A1 CN 2013089462 W CN2013089462 W CN 2013089462W WO 2014194637 A1 WO2014194637 A1 WO 2014194637A1
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WO
WIPO (PCT)
Prior art keywords
electroluminescent
layer
array substrate
electroluminescent device
liquid crystal
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PCT/CN2013/089462
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English (en)
Chinese (zh)
Inventor
郭仁炜
董学
张财政
Original Assignee
北京京东方光电科技有限公司
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Publication of WO2014194637A1 publication Critical patent/WO2014194637A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/133602—Direct backlight
    • G02F1/133603—Direct backlight with LEDs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/133602—Direct backlight
    • G02F1/133612—Electrical details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/50—OLEDs integrated with light modulating elements, e.g. with electrochromic elements, photochromic elements or liquid crystal elements

Definitions

  • Embodiments of the present invention relate to an array substrate, a liquid crystal display panel, and a display device. Background technique
  • liquid crystal displays with lightness, thinness, low power consumption, high brightness and high display quality have been pursued.
  • the existing liquid crystal display mainly includes a liquid crystal display panel 80 and a backlight module 90; the backlight module 90 is located on the light incident side of the liquid crystal display panel 80;
  • the liquid crystal display panel 80 mainly includes a color film substrate 801 and an array substrate 802 disposed opposite to each other, and a liquid crystal layer 803 filled between the color film substrate 801 and the array substrate 802;
  • the backlight module 90 includes at least a light source, a back plate, an optical film, and the like.
  • the backlight module includes an edge light type and a direct type according to the position where the light source is disposed.
  • the edge-lit backlight module will be described as an example below.
  • the backlight module 90 mainly includes a back plate 901 , a bottom reflection plate 902 located above the back plate 901 , a light guide plate 903 located above the bottom reflection plate 902 , an optical film 904 located above the light guide plate 903 , and a light guide plate 903 side end light source 905.
  • the backlight module provides a light source for the liquid crystal display panel.
  • the thickness of each layer structure (such as the back plate, the bottom reflector, the light guide plate, the optical film layer, etc.) in the backlight module has a fixed specification, and the backlight module assembled from each layer realizes a light and thin liquid crystal display having a certain thickness. limitation.
  • the backlight module is independent of the liquid crystal display panel, and the assembly is complicated and heavy, which is not conducive to the realization of a liquid crystal display having the advantages of lightness and thinness. Summary of the invention
  • An array substrate provided by an embodiment of the invention includes a substrate substrate, a thin film transistor pixel array located above the substrate substrate, and one or more electro-electrodes between the thin film transistor pixel array and the substrate a light emitting device, wherein the electroluminescent device corresponds to a region where the thin film transistor pixel array is located; and the electroluminescent device and the thin film transistor pixel array are transparent
  • the insulating layer is insulated.
  • the overall light emitting area of the electroluminescent device overlaps the pixel display area of the array substrate.
  • the electroluminescent device is an electroluminescent device that emits white light.
  • the plurality of electroluminescent devices are disposed in the same layer, and the spacing between any two adjacent of the electroluminescent devices is less than 100 microns, preferably less than 60 microns.
  • the plurality of electroluminescent devices are mutually parallel strip structures extending along opposite ends of the substrate substrate.
  • the electroluminescent device includes oppositely disposed cathodes and anodes, and an electroluminescent layer between the anode and cathode, the cathode, electroluminescent layer and anode being disposed in a stacked manner On the base substrate.
  • the array substrate further includes: a plurality of switching transistors connected to the respective electroluminescent devices in a one-to-one correspondence between the transparent insulating layer and the substrate; wherein An anode of the electroluminescent device is connected to a drain of the switching transistor, a cathode of the electroluminescent device is connected to a first power supply; or an anode of the electroluminescent device is connected to the first power supply, A cathode of the electroluminescent device is coupled to a drain of the switching transistor.
  • each of the switching transistors is located on the same side of each of the electroluminescent devices; the array substrate further includes: a gate line connected to a gate of each switching transistor, and a source of each switching transistor A connected data line that is connected to the second power supply.
  • the electroluminescent layer is an integral electroluminescent layer or an electroluminescent layer comprised of a plurality of mutually independent electroluminescent layer units having a patterned pattern.
  • the setting pattern of the electroluminescent layer unit is one or more of a rectangle, a diamond, a circle, a triangle, and a trapezoid.
  • the electroluminescent device further includes an electron injection layer and an electron transport layer between the cathode and the electroluminescent layer, and between the anode and the electroluminescent layer. a hole injection layer and a hole transport layer.
  • Another embodiment of the present invention provides a liquid crystal display panel comprising any of the above array substrate, a counter substrate, and a liquid crystal layer between the opposite substrate and the array substrate.
  • the opposite substrate is a color film substrate.
  • a further embodiment of the present invention provides a display device comprising the above liquid crystal display panel and a driving circuit for driving the liquid crystal display panel to realize image display.
  • FIG. 1 is a schematic structural view of a conventional liquid crystal display
  • FIG. 2 is a schematic top view of an array substrate according to an embodiment of the present invention.
  • FIG. 3 is a cross-sectional view of the array substrate shown in FIG. 2 taken along line A-A;
  • FIG. 4 is a top plan view of the array substrate including the switching transistors in one-to-one correspondence with the electroluminescent device shown in FIG. 2;
  • Figure 5 is a cross-sectional view of the array substrate shown in Figure 4 taken along line A-A;
  • FIG. 6 is a schematic view showing a pattern of an electroluminescent layer unit in an electroluminescent layer according to an embodiment of the present invention
  • FIG. 7 is a schematic diagram showing the structure of an electroluminescent layer composed of rectangular electroluminescent layer units according to an embodiment of the present invention.
  • FIG. 8 is a schematic structural diagram of an electroluminescent layer composed of a triangular-shaped electroluminescent layer unit according to an embodiment of the present invention.
  • FIG. 9 is a schematic structural diagram of an array substrate according to an embodiment of the present invention.
  • FIG. 10 to FIG. 19 are schematic cross-sectional views of an array substrate according to an embodiment of the present invention at different stages of fabrication. detailed description
  • Embodiments of the present invention provide an array substrate, a liquid crystal display panel, and a display device for implementing A liquid crystal display panel and a display device having a single structure and a thin structure.
  • the display device provided by the embodiment of the invention may be a liquid crystal display or a liquid crystal television or the like.
  • the liquid crystal display or the liquid crystal television is mainly composed of a liquid crystal display panel and a driving circuit for driving the liquid crystal display panel to realize image display, and an electroluminescent device provided with a backlight provided in the liquid crystal display panel is substituted for the existing backlight module, thereby realizing a A liquid crystal display panel that provides backlighting.
  • an electroluminescent device is embedded in an array substrate of a liquid crystal display panel to realize a backlight in-cell type (In cell type) liquid crystal display panel.
  • the structure of the liquid crystal display panel is simple, light and thin, and can provide a backlight. Accordingly, the display device including the liquid crystal display panel has a single structure and is light and thin.
  • the electroluminescent device provided by the embodiment of the invention is a surface light source, and the surface light source is located in the pixel display area of the array substrate covering the entire array substrate, and provides backlight for the liquid crystal display panel.
  • the electroluminescent device is of a stacked structure, and the electroluminescent device comprises at least: an oppositely disposed anode and cathode, an electroluminescent layer between the anode and the cathode; energizing the anode and the cathode, and carrying the anode
  • the carrier electrons of the hole and the cathode are injected into the electroluminescent layer from the anode and the cathode, respectively, and the excitons are formed in the electroluminescent layer, the excitons are excited, and the excitons are quickly repulsed back to the ground state, and the excitation is repulsed.
  • the radiated energy excites the electroluminescent layer to emit light. That is, the electroluminescent device is turned on (light
  • FIG. 2 is a schematic top view of an array substrate according to an embodiment of the invention.
  • the array substrate includes a substrate substrate 1; a thin film transistor pixel array (not shown in FIG. 2) on the substrate substrate 1; one or more layers disposed between the substrate substrate 1 and the pixel array
  • An electroluminescent device 11 emitting white light, the electroluminescent device 11 corresponding to the region in which the pixel array is located; and a transparent insulating layer between the electroluminescent device 11 and the pixel array.
  • the electroluminescent device 11 is used to provide backlight for the liquid crystal display panel, and the light emitted by the electroluminescent device 11 can be smoothly emitted to the thin film transistor pixel array for display, and thus the insulation between the electroluminescent device 11 and the thin film transistor pixel array.
  • the layer is a transparent insulating layer, for example, the transparent insulating layer may be a silicon oxide (SiOx) layer or a silicon nitride (SiNx) layer.
  • the array substrate shown in FIG. 2 is AA, the cross-sectional view of the line is shown in Figure 3.
  • the electroluminescent device 11 is located above the substrate 1; the insulating layer 13 is located above the electroluminescent device 11;
  • the thin film transistor pixel array 14 is located above the insulating layer 13.
  • the electroluminescent device comprises at least a cathode and an anode disposed oppositely and an electroluminescent layer between the cathode and the anode, the cathode, the anode and the electroluminescent layer being disposed in a stacked manner.
  • the cathode 111 of the electroluminescent device 11 is located above the substrate substrate 1
  • the electroluminescent layer 113 is located above the cathode 111
  • the anode 112 is located at the electroluminescent layer 113.
  • the arrangement of the anode and the cathode on the substrate can be interchanged, and correspondingly, the driving connection mode needs to be adjusted accordingly.
  • the functional film layer on the electroluminescent layer 113 ie, the side away from the substrate 1 needs to be set to be transparent or translucent.
  • the anode above the electroluminescent layer 113 is a transparent metal oxide film layer, or the cathode above the electroluminescent layer 113 is a translucent metal (for example, its transmittance is greater than 80%), of course, at the cathode 111
  • the electroluminescent layer 113 between the anode and the anode 112 there may be other auxiliary layers which are also required to be transparent as long as they are located above the electroluminescent layer 113.
  • the array substrate provided in Figure 3 is intended to illustrate the invention and is not intended to limit the invention.
  • the transparent metal oxide film layer may be, but not limited to, indium tin oxide ITO or indium oxide oxide IZO.
  • the array substrate shown in Figures 2 and 3 is an array substrate capable of providing backlights according to an embodiment of the present invention.
  • the anode 112 and the cathode 111 of the electroluminescent device 11 are energized to achieve electroluminescence.
  • the arrows in Fig. 3 indicate the light emitted from the electroluminescent device 11.
  • the array substrate provided by the embodiment of the present invention can provide a backlight, and realizes providing a backlight only by a backlight source (electroluminescence device) embedded in the array substrate, so that the liquid crystal display panel formed by using the array substrate
  • the structure is more compact and lighter.
  • the electroluminescent device disposed in the array substrate is located between the pixel transistor pixel array and the substrate, and the electric field formed between the cathode and the anode of the electroluminescent device does not affect the pixel electrode and the common electrode in the pixel transistor pixel array.
  • the electric field formed between the two that is, the electroluminescent device does not affect the array substrate and the color filter substrate
  • the deflection of the liquid crystal molecules between the two realizes a liquid crystal display panel having a better display effect and a backlight effect.
  • the light-emitting area of the electroluminescent device provided by the embodiment of the present invention is determined by the area of the electroluminescent layer, the cathode and the anode. Generally, the pattern and area of the cathode, anode and electroluminescent layer are identical, and the area of illumination of the electroluminescent device is determined, for example, by the coverage area of the electroluminescent layer.
  • the electroluminescent device has the advantages of large light-emitting area, high luminous efficiency, and luminous brightness.
  • the luminescent color of the electroluminescent device is mainly determined by the material of the electroluminescent layer, and when the electroluminescent layer is made of a material that emits white light, the electroluminescent layer emits white light.
  • it is also possible to respectively emit light of a corresponding color by setting an electroluminescent layer that emits red light, green light, and blue light, and obtain white light by mixing light.
  • Such a structure requires a small area of each of the electroluminescent layers emitting red, green and blue light, which is advantageous for uniform light mixing.
  • the embodiment of the invention is described by taking an electroluminescent layer that emits white light as an example.
  • An electroluminescent device may be disposed in the array substrate, or a plurality of electroluminescence may be disposed.
  • the cathode, the anode, and the cathode and the anode of the electroluminescent device are stacked.
  • the electroluminescent layer between them covers, for example, the entire substrate substrate, or at least covers the pixel display area of the entire array substrate.
  • the illuminating area of the electroluminescent device is, for example, approximately equal to the area of the entire substrate.
  • the sum of the light-emitting area regions of the respective electroluminescent devices coincides with at least the pixel display regions of the entire array substrate.
  • the sum of the light emitting areas of the respective electroluminescent devices is approximately equal to the area of the substrate.
  • each of the electroluminescent devices is distributed over different regions of the substrate, covering the entire substrate. Each of the electroluminescent devices is energized separately, causing each of the electroluminescent devices to be turned on (illuminated), respectively, to stop energizing an electroluminescent device, and the electroluminescent device is turned off (not emitting light).
  • a plurality of electroluminescent devices may be disposed in the array substrate provided by the embodiments of the present invention. Four electroluminescent devices are disposed in the array substrate as shown in FIG.
  • Each electroluminescent device can be of any regular pattern of suitable size.
  • each of the electroluminescent devices is a mutually parallel strip-shaped electroluminescent device extending along opposite ends of the substrate substrate 1.
  • the spacing between any two adjacent electroluminescent devices is less than 100 microns. Or, the spacing between any two adjacent electroluminescent devices Less than 60 microns.
  • the electroluminescent devices are identical in shape and size, and when the respective electroluminescent devices are simultaneously activated, the same voltage can be applied to the anodes of the respective electroluminescent devices, applying the same to the cathodes of the respective electroluminescent devices.
  • the voltage is a backlight that achieves uniform illumination brightness of each of the light-emitting devices.
  • each odd-numbered electroluminescent device is turned on, and each even-numbered row of electroluminescent devices is turned off.
  • only a part of the electroluminescent device can be turned on and another electroluminescent device can be turned off under the premise that the brightness is satisfactory.
  • each odd row of electroluminescent devices is turned off and the even rows of electroluminescent devices are turned on. This can double the life of each electroluminescent device.
  • the array substrate provided by the embodiment of the present invention further includes a plurality of switching TFTs 12 correspondingly connected to the respective electroluminescent devices.
  • the light-emitting transistor TFT12 controls the electroluminescent device 11 connected thereto to be turned on or off.
  • each switch TFT 12 is located at one end of each electroluminescent device; each switch
  • the TFT 12 controls its opening or closing by a gate line and a data line.
  • each of the switches TFT12 is located at the same end of each of the electroluminescent devices 11, and each of the switches TFT12 is controlled to be turned on or off by a different gate line 15 and the same data line 16.
  • each TFT 12 is connected to a plurality of gate lines 15, the source is connected to the data line 16, and the drain is connected to the anode of the plurality of electroluminescent devices 11; each electroluminescent device 11 The cathode is connected to a first power supply capable of providing a constant voltage, the data line 16 is connected to the second power supply; or the drain is connected to the cathode of the plurality of electroluminescent devices 11, the anode of each electroluminescent device 11 Connected to a first power supply that provides a constant voltage, the data line 16 is coupled to a second power supply.
  • the gate line 15 connected to the electroluminescent device 11 is controlled to input a gate voltage Vg that enables the TFT 12 to be turned on for the TFT 12 corresponding to the gate line 15.
  • the second power supply inputs an anode (or cathode) voltage VI to the TFT 12 through the data line 16 (the anode voltage is input when the drain is connected to the anode, and the cathode voltage is input when the drain is connected to the cathode).
  • TFT12 is turned on, voltage VI is applied to the anode (or cathode), and the first power supply is the cathode (or anode)
  • the applied voltage V2, I VI - V2 I is greater than the threshold voltage of the electroluminescent device 11, the electroluminescent device 11 is turned on (i.e., illuminated).
  • the gate line input voltage Vg corresponding to the electroluminescent device is stopped, the TFT 12 connected to the gate line is turned off, and the electroluminescent device 11 is turned off (i.e., the light is stopped).
  • the gate lines and the data lines connected to the electroluminescent device and the gate lines and the data lines involved in the pixel array of the thin film transistor are different (ie, not shared), and the embodiment and the The gate lines and data lines connected to the electroluminescent device are only used to control the mutually intersecting signal lines provided by the backlight of the electroluminescent device to form part of the backlight driving circuit.
  • Figure 5 is a cross-sectional view of the array substrate shown in Figure 4 taken along line A-A.
  • the structure of the array substrate shown in Fig. 4 will be further described below with reference to Fig. 5.
  • the TFT 12 is located on one side of the electroluminescent device 11; the TFT 12 is located between the substrate 1 and the insulating layer 13; the TFT 12 includes at least a gate 121, a gate insulating layer 122, a source 123 and a drain 124, and a semiconductor layer 125; The drain 124 of the TFT 12 is connected to the cathode 111 of the electroluminescent device 11.
  • the TFT 12 shown in FIG. 5 is schematically illustrated by using a top gate type thin film transistor structure as an example.
  • the cathode 111 of the electroluminescent device 11 is located on the base substrate 1, and the drain 124 of the TFT 12 and the electroluminescent device are shown.
  • the cathode 111 of 11 is connected.
  • the TFT 12 can also be formed as a bottom-gate thin film transistor.
  • the electroluminescent device 11 can also be formed such that the anode is located on the substrate, and the drain electrode 124 of the TFT 12 is connected to the anode of the electroluminescent device 11, which is not specifically limited.
  • the electroluminescent layer in each electroluminescent device can be composed of an electroluminescent layer without any pattern (ie consisting of an integral electroluminescent layer), for example a pattern of electroluminescent layers such as 2 and 4, the electroluminescent layer is composed of an integrated light-emitting layer; the electroluminescent layer in each electroluminescent device can also be composed of a plurality of mutually independent electroluminescences having a set pattern.
  • the layer unit is composed of, and the electroluminescent layer unit may be a regular or irregular pattern, and may be, for example, one or more of a rectangle, a diamond, a circle, a triangle, a trapezoid, and the like as shown in FIG. 6.
  • the electroluminescent layer consists of a plurality of mutually independent rectangular electroluminescent layer units 118 as shown in FIG. 7, or a plurality of mutually independent triangular electroluminescent layer units 118 as shown in FIG.
  • the electroluminescent layer units 118 are disposed opposite each other.
  • Independent electroluminescent layer The gap between the elements 118 is small, ensuring that the uniformity of the brightness of the pixel areas on the array substrate is not affected.
  • the patterns of the electroluminescent layers shown in Figures 6 through 8 are for illustrative purposes only and are not intended to limit the embodiments of the present invention.
  • the electroluminescent device 11 further includes: a cathode 111 and an electroluminescent layer 113.
  • An electron transport layer 114 is disposed between the hole transport layer 115 between the anode 112 and the electroluminescent layer 113.
  • the hole transport layer 115 can increase the transport rate of holes, and the electron transport layer 114 can increase the electron transport rate, thereby increasing the recombination probability of electrons and holes in the electroluminescent layer, and improving the luminous efficiency of the electroluminescent device.
  • the cathode 111 and the anode 112 shown in Fig. 9 are interchangeable.
  • the electron transport layer 114 and the hole transport layer 115 also need to be interchanged.
  • the structure of the electroluminescent device comprises an anode, a hole transport layer, an electroluminescent layer, an electron transport layer and a cathode which are sequentially distributed from top to bottom, or a cathode, an electron transport layer which is sequentially distributed from top to bottom, An electroluminescent layer, a hole transport layer and an anode.
  • the light-emitting layer, the electron transport layer, and the cathode may, for example, further include a hole blocking layer between the cathode and the electron transport layer, and/or an electron blocking layer between the anode and the hole transport layer to achieve enhanced electron and space
  • the electroluminescent device 11 may further include any film layer which can improve the luminous efficiency of the electroluminescent device, and for example, may further include an electron injecting layer and a hole injecting layer (not shown), and the electron injecting layer is located at the cathode and the electron Between the transport layers, a hole injection layer is located between the anode and the hole transport layer. I won't go into details here.
  • the anode may be a transparent conductive film layer, for example, an indium tin oxide ITO or an indium oxide oxide IZO film layer, and the cathode may be a metal or an alloy such as aluminum or molybdenum.
  • the electroluminescent layer is a white light-emitting electroluminescent layer formed of an organic electroluminescent material, or a white-emitting electroluminescent layer formed of a quantum electroluminescent material.
  • the electroluminescent layer is a white light-emitting electroluminescent layer formed of a quantum dot electroluminescent material
  • the quantum dot electroluminescent material includes quantum dots capable of generating three colors of red, green and blue to achieve the effect of emitting white light.
  • the insulation between the electroluminescent device 11 and the TFT pixel array 14 in the array substrate shown in FIG. Layer 13 is a flat layer.
  • the switching TFT 12 that controls the electroluminescent device 11 to emit light as shown in FIG. 4 may It is thought that the top gate type TFT can also be a bottom gate type TFT. In the array substrate shown in FIG. 4, the switching TFT 12 is a top gate type TFT.
  • Step 1 A switch TFT and an electroluminescent device connected to the switch TFT are fabricated on the substrate.
  • Step 2 A pixel array for realizing image display is formed in the above-described switch TFT.
  • the above step 1 may include the following steps, for example:
  • Step 101 depositing an amorphous silicon film (a-Si) on a base substrate (for example, a glass substrate) by using a film forming process, and referring to FIG. 10, forming an amorphous region in a region near the side end of the glass substrate 1 by a patterning process Silicon layer 120.
  • a-Si amorphous silicon film
  • Step 102 depositing an insulating film on the glass substrate 1 shown in FIG. 10 by using a film forming process, and the insulating film may be a silicon nitride protective film SiNx, and forming an amorphous silicon layer 120 as shown in FIG. 11 by a patterning process.
  • the upper surface of the gate insulating layer 122 and the gate insulating layer 122 is smaller than the area of the amorphous silicon layer 120, for example, to ensure that both sides of the amorphous silicon layer 120 are exposed.
  • Step 103 depositing a metal thin film on the glass substrate 1 shown in FIG. 11 by using a film forming process.
  • a gate electrode 121 on the gate insulating layer 122 is formed by a patterning process.
  • Step 104 ion implantation is performed on a region exposed on both sides of the amorphous silicon layer 120. Referring to FIG. 13, a source 123 and a drain 124 and a semiconductor layer 125 are formed.
  • Step 105 forming source and gate leads and gate lines and data lines (not shown in the drawings) on the glass substrate by a sputtering method.
  • the gate line and the data line are the signal lines of the backlight driving circuit, and are independent of the gate lines and the data lines in the thin film transistor pixel array to be formed later.
  • Step 106 Referring to Figure 14, an aluminum or molybdenum film in contact with the drain is sputtered on the glass substrate, and a cathode 111 corresponding to each electroluminescent device is formed by a patterning process.
  • Step 107 referring to FIG. 15, depositing an electron transport layer 114 on the cathode 111, the electron transport layer
  • the electron transport layer 114 is insulated from the gate electrode 121, the source electrode 123, and the semiconductor layer 125, and the electron transport layer 114 covers only a portion of the cathode 111.
  • Step 108 Referring to FIG. 16, an electroluminescent layer 113 is deposited on the electron transport layer 114, and the electroluminescent layer 113 covers only the region where the electron transport layer 114 is located.
  • Step 109 referring to FIG. 17, depositing a hole transport layer 115 on the electroluminescent layer 113, the cavity
  • the transport layer 115 covers only the area where the electroluminescent layer 113 is located.
  • Step 110 Referring to Fig. 18, an anode 112 is deposited on the hole transport layer 115, and the anode 112 covers the region where the hole transport layer 115 is located.
  • Step 111 Referring to Fig. 19, an insulating resin layer is applied over the entire glass substrate 1 as a transparent insulating layer 13.
  • Step 112. The array substrate formed by forming the pixel array 14 on the glass substrate 1 shown in Fig. 19 is, for example, as shown in Fig. 9.
  • the backlight is provided by an electroluminescent device formed by lamination deposition, thereby flexibly preparing a liquid crystal display panel having a backlight function.
  • the liquid crystal display panel mainly includes the array substrate provided by any one of the above embodiments of the present invention, the opposite substrate disposed opposite the array substrate, and the liquid crystal layer between the opposite substrate and the array substrate.
  • the opposite substrate may be a color filter substrate on which a color filter is formed.
  • the color filter is not formed on the opposite substrate but is formed on the array substrate, that is, in this case, the array substrate is formed with a TFT pixel array and color filter simultaneously. sheet.
  • the electrons of the cathode and the holes of the anode are respectively injected into the electroluminescent layer under the action of an electric field to excite the electroluminescent layer covering the entire substrate to emit light.
  • the light emitted by the electroluminescent device is ejected, and the light of different gray scales is generated by the deflection of the liquid crystal molecules to be projected onto the color filter substrate disposed opposite to the array substrate, and is filtered by the color filter layer in the color filter substrate.
  • the light-emitting side of the liquid crystal display panel forms a color display.
  • Another embodiment of the present invention further provides a display device including the above liquid crystal display panel and a driving circuit for driving the liquid crystal display panel to realize image display.
  • the display device may be a liquid crystal display or a liquid crystal television or the like.
  • the thicknesses and relative sizes of the film layers in the drawings of the embodiments of the present invention do not represent actual thicknesses and relative sizes, and the purpose is to schematically illustrate the present invention.
  • the terms "above” and “below” mentioned in the embodiments of the present invention are merely illustrative of the upper and lower positional relationship of the two film layers, and the two film layers may be in direct contact or may have an insertion member therebetween.
  • a backlight in-cell (In cell type) liquid crystal display panel is realized by embedding an electroluminescent device in an array substrate of a liquid crystal display panel.
  • Electroluminescent device replaces the conventional complicated backlight module, and realizes a liquid crystal display panel with a structure that is simple and light, and provides a backlight. Accordingly, the display device including the liquid crystal display panel has a single and thin structure.

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

La présente invention porte sur un substrat en réseau, un panneau d'affichage à cristaux liquides et un dispositif d'affichage. Le substrat en réseau comprend un substrat (1), un réseau (14) de pixels de transistor en couches minces positionné sur le substrat (1) et un ou plusieurs composants (11) électroluminescents agencés entre le réseau (14) de pixels de transistor en couches minces et le substrat (1). Le composant (11) électroluminescent correspond à une zone du réseau (14) de pixels de transistor en couches minces et est isolé du réseau (14) de pixels de transistor en couches minces par l'intermédiaire d'une couche (13) isolante transparente.
PCT/CN2013/089462 2013-06-08 2013-12-14 Substrat en réseau, panneau d'affichage à cristaux liquides et dispositif d'affichage WO2014194637A1 (fr)

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CN103323975B (zh) * 2013-06-08 2015-09-23 北京京东方光电科技有限公司 一种阵列基板、液晶显示面板及显示装置
CN103525406B (zh) 2013-10-21 2015-08-26 京东方科技集团股份有限公司 一种复合薄膜及其制作方法、光电元件和光电设备
CN103779509A (zh) * 2014-01-27 2014-05-07 京东方科技集团股份有限公司 发光器件及其制作方法和显示面板
CN104516150B (zh) * 2015-01-28 2017-07-21 京东方科技集团股份有限公司 一种显示面板、其制作方法及显示装置
CN105842773A (zh) * 2016-03-30 2016-08-10 乐视控股（北京）有限公司 一种自发光导光板、背光模组及显示设备
US10818856B2 (en) 2017-05-18 2020-10-27 Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Method for fabricating thin film transistor, method for fabricating array substrate, and a display apparatus
CN107195782A (zh) * 2017-05-18 2017-09-22 深圳市华星光电技术有限公司 薄膜晶体管制作方法、阵列基板制作方法及显示装置
CN113629116B (zh) * 2021-07-30 2022-06-07 惠科股份有限公司 阵列基板、显示面板和阵列基板的制作方法

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CN103323975A (zh) * 2013-06-08 2013-09-25 北京京东方光电科技有限公司 一种阵列基板、液晶显示面板及显示装置

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GB2403023A (en) * 2003-06-20 2004-12-22 Sharp Kk Organic light emitting device
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