CN103323975B - 一种阵列基板、液晶显示面板及显示装置 - Google Patents
一种阵列基板、液晶显示面板及显示装置 Download PDFInfo
- Publication number
- CN103323975B CN103323975B CN201310228681.2A CN201310228681A CN103323975B CN 103323975 B CN103323975 B CN 103323975B CN 201310228681 A CN201310228681 A CN 201310228681A CN 103323975 B CN103323975 B CN 103323975B
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- China
- Prior art keywords
- electroluminescent device
- layer
- array base
- base palte
- electroluminescence layer
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- 239000000758 substrate Substances 0.000 claims abstract description 64
- 239000010409 thin film Substances 0.000 claims abstract description 15
- 239000010410 layer Substances 0.000 claims description 173
- 238000005401 electroluminescence Methods 0.000 claims description 84
- 239000004973 liquid crystal related substance Substances 0.000 claims description 18
- 239000012528 membrane Substances 0.000 claims description 17
- 230000027756 respiratory electron transport chain Effects 0.000 claims description 15
- 230000005540 biological transmission Effects 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 9
- 238000002347 injection Methods 0.000 claims description 7
- 239000007924 injection Substances 0.000 claims description 7
- 238000003475 lamination Methods 0.000 claims description 4
- 239000011368 organic material Substances 0.000 claims description 3
- 238000010586 diagram Methods 0.000 description 14
- 238000004020 luminiscence type Methods 0.000 description 9
- 229910021417 amorphous silicon Inorganic materials 0.000 description 8
- 239000011521 glass Substances 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- 238000009413 insulation Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 239000012212 insulator Substances 0.000 description 5
- 238000000059 patterning Methods 0.000 description 4
- 238000000576 coating method Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 239000012788 optical film Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- IXSZQYVWNJNRAL-UHFFFAOYSA-N etoxazole Chemical compound CCOC1=CC(C(C)(C)C)=CC=C1C1N=C(C=2C(=CC=CC=2F)F)OC1 IXSZQYVWNJNRAL-UHFFFAOYSA-N 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
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- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- OFIYHXOOOISSDN-UHFFFAOYSA-N tellanylidenegallium Chemical compound [Te]=[Ga] OFIYHXOOOISSDN-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
- G02F1/133602—Direct backlight
- G02F1/133603—Direct backlight with LEDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
- G02F1/133602—Direct backlight
- G02F1/133612—Electrical details
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/50—OLEDs integrated with light modulating elements, e.g. with electrochromic elements, photochromic elements or liquid crystal elements
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310228681.2A CN103323975B (zh) | 2013-06-08 | 2013-06-08 | 一种阵列基板、液晶显示面板及显示装置 |
| PCT/CN2013/089462 WO2014194637A1 (fr) | 2013-06-08 | 2013-12-14 | Substrat en réseau, panneau d'affichage à cristaux liquides et dispositif d'affichage |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310228681.2A CN103323975B (zh) | 2013-06-08 | 2013-06-08 | 一种阵列基板、液晶显示面板及显示装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103323975A CN103323975A (zh) | 2013-09-25 |
| CN103323975B true CN103323975B (zh) | 2015-09-23 |
Family
ID=49192814
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310228681.2A Expired - Fee Related CN103323975B (zh) | 2013-06-08 | 2013-06-08 | 一种阵列基板、液晶显示面板及显示装置 |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN103323975B (fr) |
| WO (1) | WO2014194637A1 (fr) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103323975B (zh) * | 2013-06-08 | 2015-09-23 | 北京京东方光电科技有限公司 | 一种阵列基板、液晶显示面板及显示装置 |
| CN103525406B (zh) | 2013-10-21 | 2015-08-26 | 京东方科技集团股份有限公司 | 一种复合薄膜及其制作方法、光电元件和光电设备 |
| CN103779509A (zh) * | 2014-01-27 | 2014-05-07 | 京东方科技集团股份有限公司 | 发光器件及其制作方法和显示面板 |
| CN104516150B (zh) * | 2015-01-28 | 2017-07-21 | 京东方科技集团股份有限公司 | 一种显示面板、其制作方法及显示装置 |
| CN105842773A (zh) * | 2016-03-30 | 2016-08-10 | 乐视控股（北京）有限公司 | 一种自发光导光板、背光模组及显示设备 |
| US10818856B2 (en) | 2017-05-18 | 2020-10-27 | Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Method for fabricating thin film transistor, method for fabricating array substrate, and a display apparatus |
| CN107195782A (zh) * | 2017-05-18 | 2017-09-22 | 深圳市华星光电技术有限公司 | 薄膜晶体管制作方法、阵列基板制作方法及显示装置 |
| CN113629116B (zh) * | 2021-07-30 | 2022-06-07 | 惠科股份有限公司 | 阵列基板、显示面板和阵列基板的制作方法 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101424846A (zh) * | 2007-10-29 | 2009-05-06 | 北京京东方光电科技有限公司 | Tft-lcd阵列基板、液晶显示面板及其制造方法 |
| CN102998845A (zh) * | 2012-12-11 | 2013-03-27 | 京东方科技集团股份有限公司 | 一种液晶显示屏及显示装置 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100853769B1 (ko) * | 2000-12-29 | 2008-08-25 | 엘지디스플레이 주식회사 | 액정표시장치 및 그 제조방법 |
| GB2403023A (en) * | 2003-06-20 | 2004-12-22 | Sharp Kk | Organic light emitting device |
| CN103323975B (zh) * | 2013-06-08 | 2015-09-23 | 北京京东方光电科技有限公司 | 一种阵列基板、液晶显示面板及显示装置 |
-
2013
- 2013-06-08 CN CN201310228681.2A patent/CN103323975B/zh not_active Expired - Fee Related
- 2013-12-14 WO PCT/CN2013/089462 patent/WO2014194637A1/fr active Application Filing
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101424846A (zh) * | 2007-10-29 | 2009-05-06 | 北京京东方光电科技有限公司 | Tft-lcd阵列基板、液晶显示面板及其制造方法 |
| CN102998845A (zh) * | 2012-12-11 | 2013-03-27 | 京东方科技集团股份有限公司 | 一种液晶显示屏及显示装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2014194637A1 (fr) | 2014-12-11 |
| CN103323975A (zh) | 2013-09-25 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150923 |