CN103323975B - A kind of array base palte, display panels and display device - Google Patents
A kind of array base palte, display panels and display device Download PDFInfo
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- CN103323975B CN103323975B CN201310228681.2A CN201310228681A CN103323975B CN 103323975 B CN103323975 B CN 103323975B CN 201310228681 A CN201310228681 A CN 201310228681A CN 103323975 B CN103323975 B CN 103323975B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
- G02F1/133602—Direct backlight
- G02F1/133603—Direct backlight with LEDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
- G02F1/133602—Direct backlight
- G02F1/133612—Electrical details
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/50—OLEDs integrated with light modulating elements, e.g. with electrochromic elements, photochromic elements or liquid crystal elements
Abstract
The embodiment of the invention discloses a kind of array base palte, display panels and display device, in order to realize simple, the frivolous display device of a kind of structure.Described array base palte comprises: substrate and the thin film transistor (TFT) pel array be positioned on described substrate, also comprise: one between described pel array and described substrate or the electroluminescent device of multiple transmitting whites that arranges with layer, described electroluminescent device respective pixel array region; And described electroluminescent device is insulated by transparent insulating layer mutually with described pel array.
Description
Technical field
The present invention relates to technical field of liquid crystal display, particularly relate to a kind of array base palte, display panels and display device.
Background technology
In technical field of liquid crystal display, the liquid crystal display of light, thin, low-power consumption, high brightness and high display quality is the target pursued of Shi Ge producer always.
See Fig. 1, available liquid crystal display mainly comprises display panels 80 and backlight module 90; Backlight module 90 is positioned at the incident side of display panels 80;
Display panels 80 mainly comprises the color membrane substrates 801 and array base palte 802 that are oppositely arranged, and is filled in the liquid crystal layer 803 between color membrane substrates 801 and array base palte 802;
Described backlight module at least comprises the structures such as light source, backboard, optical film material.Backlight module comprises side-light type and straight-down negative according to the setting position difference of light source.Below will illustrate for side-light backlight module.
See Fig. 1, backlight module 90 mainly comprises backboard 901, the light source 905 being positioned at the end reflecting plate 902 above backboard 901, being positioned at light guide plate 903 above end reflecting plate 902, be positioned at optical film material 904 above light guide plate 903, be positioned at light guide plate 903 side.
Described backlight module provides light source for display panels.The thickness of each Rotating fields (as backboard, end reflecting plate, light guide plate, optical film etc.) in described backlight module has fixing specification, and the backlight module assembled by each layer realizes lightening liquid crystal display and has certain limitation.Backlight module is independent of described display panels, and the complicated and heavier-weight of assembling, is unfavorable for realizing possessing the liquid crystal display of the advantage such as light, thin.
Summary of the invention
Embodiments provide a kind of array base palte, display panels and display device, in order to realize simple, the frivolous display device of a kind of structure.
The array base palte that theres is provided of the embodiment of the present invention for achieving the above object, comprises substrate and is positioned at the thin film transistor (TFT) pel array on described substrate, also comprise:
One between described pel array and described substrate or the electroluminescent device of multiple transmitting whites that arranges with layer, described electroluminescent device respective pixel array region; And described electroluminescent device is insulated by transparent insulating layer mutually with described pel array.
Preferably, described array base palte comprises multiple electroluminescent devices that same layer is arranged, and each electroluminescent device is the list structure be parallel to each other of the relative two ends extension along described substrate.
Preferably, described electroluminescent device comprises the negative electrode be oppositely arranged in strip and anode, and the electroluminescence layer between described anode and negative electrode, and described negative electrode, electroluminescence layer and anode arrange on the substrate in the mode of lamination;
Also comprise: the switching transistor that the multiple and described each electroluminescent device one_to_one corresponding between described transparent insulating layer with described substrate is connected;
The anode of described electroluminescent device is connected with the drain electrode of described switching transistor, and the negative electrode of described electroluminescent device is connected with the first power supply; Or the anode of described electroluminescent device is connected with described first power supply, the negative electrode of described electroluminescent device is connected with the drain electrode of described switching transistor.
Preferably, described each switching transistor is positioned at the same side of described each electroluminescent device;
Also comprise: the grid line be connected with the grid of each switching transistor, and the data line be connected with the source electrode of each switching transistor, this data line is connected with the second power supply.
Preferably, described electroluminescence layer is the electroluminescence layer emitted white light that electroluminescent organic material is formed, or the electroluminescence layer emitted white light that quanta point electroluminescent material is formed.
Preferably, the electroluminescence layer that is integrated of described electroluminescence layer or the electroluminescence layer that is made up of multiple separate electroluminescence layer unit with setting pattern.
Preferably, the setting pattern of described electroluminescence layer unit be rectangle, rhombus, circle, triangle, trapezoidal in one or more.
Preferably, described electroluminescent device also comprises electron injecting layer between described negative electrode and described electroluminescence layer and electron transfer layer, and hole injection layer between described anode and described electroluminescence layer and hole transmission layer.
The embodiment of the present invention provides a kind of display panels, comprises the color membrane substrates and array base palte that are oppositely arranged, and the liquid crystal layer between described color membrane substrates and array base palte;
Wherein, described array base palte is the array base palte of above-mentioned either type.
The embodiment of the present invention also provides a kind of display device, comprises described display panels and drives this display panels to realize the driving circuit of image display.
The invention provides a kind of array base palte that backlight is provided, realize the display device that a kind of structure is simple, frivolous.Particularly, electroluminescent device is embedded in the array base palte of display panels, electroluminescent device specifically between pel array and substrate, the corresponding whole pel array region of each electroluminescent device; Each electroluminescent device is insulated by transparent insulating layer mutually with described pel array.Electroluminescent device instead of existing baroque backlight module, achieves display panels and the display device of simple, frivolous the provided backlight of a kind of structure.
Accompanying drawing explanation
Fig. 1 is available liquid crystal display device structure schematic diagram;
The array base palte schematic top plan view that Fig. 2 provides for the embodiment of the present invention;
Fig. 3 for the array base palte shown in Fig. 2 A-A ' to sectional view;
Fig. 4 is the array base palte schematic top plan view with electroluminescent device switching transistor one to one that includes shown in Fig. 2;
Fig. 5 for the array base palte shown in Fig. 4 A-A ' to sectional view;
Electroluminescence layer unit pattern schematic diagram in the electroluminescence layer that Fig. 6 provides for the embodiment of the present invention;
The electroluminescent layer structure schematic diagram of the rectangular-shaped electroluminescence layer unit composition that Fig. 7 provides for the embodiment of the present invention;
The electroluminescent layer structure schematic diagram of the triangle electroluminescence layer unit composition that Fig. 8 provides for the embodiment of the present invention;
The structural representation of a kind of array base palte that Fig. 9 provides for the embodiment of the present invention;
The array base-plate structure schematic diagram being formed with amorphous silicon layer that Figure 10 provides for the embodiment of the present invention;
The array base-plate structure schematic diagram being formed with gate insulator that Figure 11 provides for the embodiment of the present invention;
The array base-plate structure schematic diagram being formed with grid that Figure 12 provides for the embodiment of the present invention;
The array base-plate structure schematic diagram being formed with source electrode and drain electrode that Figure 13 provides for the embodiment of the present invention;
The array base-plate structure schematic diagram being formed with the negative electrode of electroluminescent device that Figure 14 provides for the embodiment of the present invention;
The array base-plate structure schematic diagram being formed with the electron transfer layer of electroluminescent device that Figure 15 provides for the embodiment of the present invention;
The array base-plate structure schematic diagram being formed with the electroluminescence layer of electroluminescent device that Figure 16 provides for the embodiment of the present invention;
The array base-plate structure schematic diagram being formed with the hole transmission layer of electroluminescent device that Figure 17 provides for the embodiment of the present invention;
The array base-plate structure schematic diagram being formed with the anode of electroluminescent device that Figure 18 provides for the embodiment of the present invention;
The array base-plate structure schematic diagram being formed with transparent insulating layer that Figure 19 provides for the embodiment of the present invention.
Embodiment
Embodiments provide a kind of array base palte, display panels and display device, in order to realize the simple and frivolous display panels of a kind of structure and display device.
The display device that the embodiment of the present invention provides can be liquid crystal display or LCD TV etc.Liquid crystal display or LCD TV are primarily of display panels and drive this display panels to realize the driving circuit composition of image display, adopt the electroluminescent device of the provided backlight arranged in display panels to substitute existing backlight module, achieve a kind of display panels that backlight is provided.
Particularly, electroluminescent device is embedded in the array base palte of display panels, realizes the display panels of a kind of backlight embedded (In cell formula).The structure of display panels is simple, frivolous, and can provide backlight, and correspondingly, the display device structure comprising described display panels is simple and frivolous.
The described electroluminescent device that the embodiment of the present invention provides is area source, and this area source is arranged in the picture element display area that array base palte covers whole array base palte, for display panels provides backlight.
The principle of luminosity of the electroluminescent device below the simple declaration embodiment of the present invention provided.
Described electroluminescent device is terrace structure, and electroluminescent device at least comprises: the anode be oppositely arranged and negative electrode, the electroluminescence layer between anode and negative electrode; To described anode and cathodal closing, the carrier hole of anode and the carrier electrons of negative electrode are respectively from anode and negative electrode injection lelctroluminescence layer, exciton is compounded to form at electroluminescence layer, exciton is in excited state, exciton very rewind excites and gets back to ground state, and it is luminous that de excitation sends out the energy excitation electroluminescence layer given off.Namely electroluminescent device opens (luminescence) when being energized, in non-closed in electrified state (not luminous).
The array base palte, display panels and the display device that to be illustrated the embodiment of the present invention by accompanying drawing and provide below.
Display panels mainly comprises the color membrane substrates and array base palte that are oppositely arranged, and the liquid crystal layer between color membrane substrates and array base palte.It should be noted that, in the embodiment of the present invention, array base palte is for being provided with thin film transistor (TFT) (Thin Film Transistor, TFT) substrate of pel array, color membrane substrates is another substrate be oppositely arranged with array base palte, colored filter is integrated in the structure of array base palte, also can using array base palte and color membrane substrates as the designate of two substrates be oppositely arranged, therefore array base palte and color membrane substrates are not the restrictions to structure.The embodiment of the present invention is arranged at array base palte with thin film transistor (TFT) pel array, and the structure that colored filter is arranged at color membrane substrates is that example is described.
Below first illustrate that the embodiment of the present invention provides the array base palte being embedded with electroluminescent device.
See Fig. 2, the array base palte schematic top plan view that the embodiment of the present invention provides, comprising:
Substrate 1;
Be positioned at the thin film transistor (TFT) pel array on substrate 1;
The electroluminescent device 11 of the transmitting white that the one or more same layer between substrate 1 and described pel array is arranged, the corresponding described pel array region of electroluminescent device 11;
Transparent insulating layer between electroluminescent device 11 and pel array.
Electroluminescent device 11 is for providing backlight for display panels, the light that electroluminescent device 11 sends can smoothly outgoing to thin film transistor (TFT) pel array for display, therefore the insulation course between electroluminescent device 11 and thin film transistor (TFT) pel array is transparent insulating layer, particularly, this transparent insulating layer can be monox (SiOx) layer or silicon nitride (SiNx) layer.
In order to be illustrated more clearly in the concrete structure of the array base palte shown in Fig. 2, the array base palte shown in Fig. 2 A-A ' to sectional view as shown in Figure 3.
Electroluminescent device 11 is positioned on substrate 1;
Insulation course 13 is positioned on electroluminescent device 11;
Thin film transistor (TFT) pel array 14 is positioned on insulation course 13.
Preferably, electroluminescent device at least comprises the negative electrode and anode that are oppositely arranged and the electroluminescence layer between negative electrode and anode, and negative electrode, anode and electroluminescence layer are arranged in the mode of lamination.
Preferably, as shown in Figure 3, the negative electrode 111 of electroluminescent device 11 is positioned on substrate 1, and electroluminescence layer 113 is positioned on negative electrode 111, and anode 112 is positioned on electroluminescence layer 113.
It should be noted that, anode and the negative electrode set-up mode on substrate can exchange, corresponding, it drives connected mode to need to do corresponding adjustment.Simultaneously, the light sent to make electroluminescent device 11 can provide backlight for display panels, the functional film layer being positioned at (namely away from the side of substrate 1) on electroluminescence layer 113 needs to be set to transparent or semitransparent, as being that transparent metal oxide rete is as anode on electroluminescence layer 113, or be translucent metallic cathode on electroluminescence layer 113, certainly between negative electrode 111 and anode 112 except electroluminescence layer 113, some other auxiliary layer can also be had, as long as these layers be positioned at also to need on electroluminescence layer 113 to be set to transparent.The array base palte that Fig. 3 provides, for schematically the present invention being described, is not used in restriction the present invention.
Described transparent metal oxide rete can be, but not limited to as indium tin oxide ITO or indium-zinc oxide IZO.
Array base palte shown in Fig. 2 and Fig. 3 is the array base palte of the launched backlight that the embodiment of the present invention provides.As shown in Figure 3, when display panels needs backlight, realize electroluminescence to the anode 112 of electroluminescent device 11 and negative electrode 111 energising.Arrow in Fig. 3 represents the light that electroluminescent device 11 is launched.
As can be seen here, the described array base palte that the embodiment of the present invention provides can provide backlight, achieve and provide backlight by means of only the back light be embedded in array base palte (electroluminescent device), the structure of the display panels of the provided backlight that array base palte is formed is more simple, lighter.In addition, the electroluminescent device arranged in array base palte is between thin film transistor (TFT) pel array and substrate, the electric field formed between the negative electrode of electroluminescent device and anode can not affect the electric field formed between pixel electrode and public electrode in thin film transistor (TFT) pel array, namely electroluminescent device does not affect the deflection of the liquid crystal molecule between array base palte and color membrane substrates, realizes a kind of display effect and backlight effect all preferably display panels.
The light-emitting area of the electroluminescent device that the embodiment of the present invention provides is determined by the area of electroluminescence layer, negative electrode and anode.Usually, pattern and the area of negative electrode, anode and electroluminescence layer are consistent, and the light-emitting area of electroluminescent device is determined by the area coverage of electroluminescence layer.
Electroluminescent device possesses that light-emitting area is large, luminescence efficiency is high and the advantage such as luminosity is even.The glow color of electroluminescent device determines primarily of the material of electroluminescence layer, when electroluminescence layer is made by the material emitted white light, and electroluminescence layer transmitting white.Certainly, also can be launched the light of corresponding color by the electroluminescence layer arranging red-emitting, green glow and blue light respectively, obtain white light through mixed light.This kind of structure needs the electroluminescence layer area of each red-emitting, green glow and blue light less, is conducive to even light mixing.The embodiment of the present invention is described for the electroluminescence layer of transmitting white.
An electroluminescent device can be set in above-mentioned array base palte, multiple electroluminescent device (multiple electroluminescent device comprises two or more electroluminescent device) also can be set.
When arranging an electroluminescent device in array base palte, negative electrode, anode that electroluminescent device lamination is arranged, and the electroluminescence layer between negative electrode and anode covers whole substrate, or at least cover the picture element display area of whole substrate.The light-emitting area of this electroluminescent device approximates the area of whole substrate.When being energized between the negative electrode giving electroluminescent device and anode, the electronics of negative electrode and the hole of anode be difference injection lelctroluminescence layer under the effect of electric field, excites the electroluminescence layer covering whole substrate luminous.The uniform light outgoing that electroluminescent device is launched, the ray cast being produced different gray scale by the deflection of liquid crystal molecule is to the color membrane substrates be oppositely arranged with array base palte, project the light emission side of display panels after the filter action of the color rete in color membrane substrates, form colored display.
When arranging multiple electroluminescent device in array base palte, the light-emitting area sum of each electroluminescent device approximates the area of described substrate.Each electroluminescent device is distributed in the zones of different of substrate, covers whole substrate.Give the energising of each electroluminescent device respectively, each electroluminescent device is opened (luminescence) respectively, stops being energized to a certain electroluminescent device, electroluminescent device closes (not luminous).
Electroluminescent device is when using for a long time, and luminescence efficiency can decline, the life-span can shorten.Causing the problem of the lost of life in order to avoid arranging an electroluminescent device in array base palte, preferably, in the array base palte that the embodiment of the present invention provides, multiple electroluminescent device being set.Four electroluminescent devices are provided with in array base palte as shown in Figure 2.
Each electroluminescent device can be any regular pattern of suitable size.
Preferably, as shown in Figure 2, each electroluminescent device is the strip electroluminescent device be parallel to each other of the relative two ends extension along substrate 1.
Preferably, the shape of each electroluminescent device and in the same size, when each electroluminescent device starts simultaneously, can apply identical voltage for the anode of each electroluminescent device, negative electrode for each electroluminescent device applies identical voltage, realizes the backlight that each luminescent device luminosity is consistent.
In order to extend the life-span of electroluminescent device, in an image display process, ensureing under the prerequisite that brightness meets the demands can only opening section electroluminescent device, closes another part electroluminescent device.Such as each 2n-1 electroluminescent device is opened, and 2n electroluminescent device is closed.In upper once image display process, ensureing under the prerequisite that brightness meets the demands can only opening section electroluminescent device, closes another part electroluminescent device.Such as each 2n-1 electroluminescent device is closed, and 2n electroluminescent device is opened.The life-span of each electroluminescent device can be made like this to double.Wherein, described n be not less than 1 positive integer.
Preferably, in order to control the open and close of arbitrary electroluminescent device flexibly, see Fig. 4, the array base palte that the embodiment of the present invention provides, also comprise the multiple switching transistor TFT12 be connected with each electroluminescent device one_to_one corresponding, the electroluminescent device 11 that this transistor TFT12 that opens the light controls to be attached thereto is opened or is closed.
Preferably, each switching transistor TFT12 is positioned at one end of each electroluminescent device; Each switching transistor TFT12 controls it by grid line and data line and opens or close.
Conveniently connect up, preferably, as shown in Figure 4, each switching transistor TFT12 is positioned at same one end of each electroluminescent device 11, and each switching transistor TFT12 controls it by different grid lines 15 and same data line 16 and opens or close.
As shown in Figure 4, the grid of each TFT12 is connected with many grid lines 15, and source electrode is connected with data line 16, drains to be connected with the anode one_to_one corresponding of multiple electroluminescent device 11; The negative electrode of each electroluminescent device 11 is connected with providing the first power supply of constant voltage; Or drain electrode is connected with the negative electrode one_to_one corresponding of multiple electroluminescent device 11, and the anode of each electroluminescent device 11 is connected with providing the first power supply of constant voltage, and data line 16 is connected with the second power supply.
As shown in Figure 4, when a certain electroluminescent device 11 of needs is opened, the grid line 15 controlling to be connected with this electroluminescent device 11 is that the TFT12 that this grid line 15 is corresponding inputs the grid voltage V that TFT12 can be made to open
g, the second power supply is TFT12 input anode (or negative electrode) voltage V by data line 16
1(when drain electrode is connected with anode, input anode voltage, when drain electrode is connected with negative electrode, input cathode voltage).TFT12 opens, and anode (or negative electrode) is applied with voltage V
1, the first power supply is that negative electrode (or anode) applies voltage V
2, | V
1-V
2| when being greater than the threshold voltage of this electroluminescent device 11, this electroluminescent device 11 is opened (namely luminous).
When a certain electroluminescent device of needs is closed, stop as the grid line input voltage V corresponding with this electroluminescent device
g, the TFT12 be connected with this grid line closes, and this electroluminescent device 11 is closed (namely stopping luminescence).
It should be noted that, in the embodiment of the present invention different with data line from the grid line related in the grid line that described electroluminescent device is connected and data line and thin film transistor (TFT) pel array (namely not sharing), the grid line that the embodiment of the present invention is connected with described electroluminescent device and data line only produce cross one another signal wire set by backlight for controlling electroluminescent device, are the part forming backlight drive circuit.
In order to more clearly demonstrate the concrete structure of the array base palte shown in Fig. 4, be illustrated in figure 5 the array base palte shown in Fig. 4 A-A ' to sectional view.
TFT12 is positioned at the side of electroluminescent device 11;
TFT12 is between substrate 1 and insulation course 13;
TFT12 at least comprises grid 121, gate insulator 122, source electrode 123 and drain electrode 124, and semiconductor layer 125;
The drain electrode 124 of TFT12 is connected with the negative electrode 111 of electroluminescent device 11.
Wherein, the TFT12 shown in Fig. 5 carries out signal for top gate type thin film transistor structure and the present invention is described, the negative electrode 111 of electroluminescent device 11 is positioned on substrate, and the drain electrode 124 of TFT12 is connected with the negative electrode 111 of electroluminescent device 11.Certainly, TFT12 also can be bottom gate thin film transistor, and electroluminescent device 11 also can be positioned on substrate for anode, then the drain electrode 124 of TFT12 is connected with the anode of electroluminescent device 11, does not do concrete restriction here.
Preferably, electroluminescence layer in each electroluminescent device can be made up of an electroluminescence layer without any pattern (being namely made up of the electroluminescence layer of one), the pattern of such as electroluminescence layer is as shown in Figure 2 and Figure 4 rectangular-shaped, and electroluminescence layer is made up of the luminescent layer of one; Also can be made up of multiple separate electroluminescence layer unit with setting pattern, electroluminescence layer unit can be rule or irregular figure, such as, can be one or more in rectangle as shown in Figure 6, rhombus, circle, triangle, the figure such as trapezoidal.Image shown in Fig. 6 is the figure of rule, and the electroluminescence layer unit that certain embodiment of the present invention provides can for irregular figure, as long as ensure that electroluminescence layer that all electroluminescence layer unit form continuously.
Such as electroluminescence layer multiple separate rectangular-shaped electroluminescence layer unit 118 as shown in Figure 7 forms, or multiple separate triangle electroluminescence layer unit 118 as shown in Figure 8 forms, triangle electroluminescence layer unit 118 is oppositely arranged between two.Gap between separate electroluminescence layer unit 118 is less, ensures the homogeneity not affecting pixel region brightness on array base palte.
The pattern of the electroluminescence layer shown in Fig. 6 to Fig. 8 is only in order to the present invention is described, is not used in restriction the present invention.
Preferably, in order to the injection efficiency in the hole of the electronics and anode that improve negative electrode, to improve the luminescence efficiency of electroluminescent device, see Fig. 9, electroluminescent device 11 also comprises: the electron transfer layer 114 between negative electrode 111 and electroluminescence layer 113, and the hole transmission layer 115 between anode 112 and electroluminescence layer 113.Hole transmission layer 115 can improve the transfer rate in hole, and electron transfer layer 114 can improve the transfer rate of electronics, thus improves electronics and the hole recombination probability in electroluminescence layer, improves electroluminescent device luminescence efficiency.It should be noted that, the negative electrode 111 shown in Fig. 9 and anode 112 can exchange, and after negative electrode 111 and anode 112 exchange, electron transfer layer 114 and hole transmission layer 115 also need to exchange.That is the structure of electroluminescent device comprises the anode, hole transmission layer, electroluminescence layer, electron transfer layer and the negative electrode that distribute successively from top to bottom, or comprises the negative electrode, electron transfer layer, electroluminescence layer, hole transmission layer and the anode that distribute successively from top to bottom.The electroluminescent device that certain embodiment of the present invention provides is not limited to comprise anode, hole transmission layer, electroluminescence layer, electron transfer layer and negative electrode, such as can also comprise the hole blocking layer between negative electrode and electron transfer layer, and/or the electronic barrier layer between anode and hole transmission layer, to realize the transfer rate improving electronics and hole, repeat no more here.Certainly, electroluminescent device 11 can also comprise any rete that can improve electroluminescent device luminescence efficiency, such as can also comprise electron injecting layer and hole injection layer (not shown), electron injecting layer is between negative electrode and electron transfer layer, and hole injection layer is between anode and hole transmission layer.Here repeat no more.
Described anode can be transparent conductive film layer, and can be such as indium tin oxide ITO or indium-zinc oxide IZO rete, described negative electrode can be the metal or alloy such as aluminium or molybdenum.
Described electroluminescence layer is the electroluminescence layer emitted white light that electroluminescent organic material is formed, or the electroluminescence layer emitted white light that quanta point electroluminescent material is formed.When electroluminescence layer is the electroluminescence layer emitted white light of quanta point electroluminescent material formation, quanta point electroluminescent material comprises the quantum dot that can produce red, green and blue three look, to realize the effect of transmitting white.
Preferably, in order to improve the planarization of the side that TFT pel array 14 contacts with liquid crystal layer in array base palte, in the array base palte shown in Fig. 4, the insulation course 13 between electroluminescent device 11 and TFT pel array 14 is flatness layer.
Preferably, the switching transistor TFT12 of control electroluminescent device 11 luminescence shown in Fig. 4 can be top gate type TFT also can be bottom gate type TFT.In array base palte shown in Fig. 4, switching transistor TFT12 is top gate type TFT.
Be array base palte that the embodiment of the present invention provides above.
Below specifically introduce the method for making of the array base palte that the embodiment of the present invention provides, mainly comprise two steps:
Step one: the electroluminescent device making switching transistor TFT and be connected with this switching transistor TFT on substrate.
Step 2: on the basis of step one, makes the pel array for realizing image display.
Illustrate illustrate to make top gate type open pipe transistor.
1, adopt coating process to deposit one deck amorphous silicon layer (a-Si) on the glass substrate, see Figure 10, form amorphous silicon layer 120 at glass substrate 1 by proximal region by patterning processes.
2, coating process is adopted to deposit a layer insulating on the glass substrate 1 shown in Figure 10; this insulation course can be silicon nitride protective layer SiNx; the gate insulator 122 be positioned on amorphous silicon layer 120 shown in Figure 11 is formed by patterning processes; the area of gate insulator 122 is less than the area of amorphous silicon layer 120, ensures that the both sides of amorphous silicon layer 120 are exposed.
3, adopt coating process to deposit layer of metal layer on the glass substrate 1 shown in Figure 11, see Figure 12, formed the grid 121 be positioned on gate insulator 122 by patterning processes.
Ion implantation is carried out in the region of 4, exposing in amorphous silicon layer 120 both sides, see Figure 13, forms source electrode 123 and drain 124 and semiconductor layer 125;
5, source lead and grid lead and grid line and data line (not embodying in the accompanying drawings) is formed on the glass substrate by sputtering method.It should be noted that, grid line and data line are the signal wire of backlight drive circuit herein, independent of the grid line in thin film transistor (TFT) pel array and data line.
6, see Figure 14, sputtering and the metallic aluminium or metal molybdenum layer that contact of draining, form the negative electrode 111 corresponding with each electroluminescent device by patterning processes on the glass substrate.
7, see Figure 15, negative electrode 111 deposits electron transfer layer 114, electron transfer layer 114 insulate mutually with grid 121, source electrode 123 and semiconductor layer 125 etc., and electron transfer layer 114 is covered cathode 111 region only.
8, see Figure 16, electron transfer layer 114 deposits electroluminescence layer 113, this electroluminescence layer 113 is overlay electronic transport layer 114 region only.
9, see Figure 17, deposition of hole transport layer 115 on electroluminescence layer 113, hole transmission layer 115 only covers electroluminescence layer 113 region.
10, see Figure 18, deposition anode 112 on hole transmission layer 115, anode 112 covers hole transmission layer 115 region.
11, see Figure 19, whole glass substrate 1 has applied the resin bed of insulating effect as transparent insulating layer 13.
12, on the glass substrate 1 shown in Figure 19, form pel array 14, the array base palte of formation as shown in Figure 9.
The electroluminescent device that the backlight that the embodiment of the present invention provides is formed by stack deposition mode provides, and preparation has the display panels of backlight function flexibly.
A kind of display panels that the embodiment of the present invention provides, the array base palte comprising any one mode above-mentioned and the color membrane substrates be oppositely arranged with this array base palte, and the liquid crystal layer between array base palte and color membrane substrates.
The embodiment of the present invention also provides a kind of display device, comprises above-mentioned display panels and drives this display panels to realize the driving circuit of image display.Display device can be liquid crystal display or LCD TV etc.
It should be noted that, the thickness of each rete in embodiment of the present invention accompanying drawing and relative size do not represent actual thickness and relative size, and object is schematically the present invention to be described.In addition, the embodiment of the present invention mention " on " wording is only the overlying relation that two-layer rete is described, the relation between the concrete pattern that two retes are not described.
In sum, the embodiment of the present invention, by being embedded in the array base palte of display panels by electroluminescent device, realizes the display panels of a kind of backlight embedded (In cell formula).Electroluminescent device instead of the more complicated backlight module of existing structure, achieves the display panels of simple, frivolous the provided backlight of a kind of structure, and correspondingly, the display device structure comprising described display panels is simple and frivolous.
Obviously, those skilled in the art can carry out various change and modification to the present invention and not depart from the spirit and scope of the present invention.Like this, if these amendments of the present invention and modification belong within the scope of the claims in the present invention and equivalent technologies thereof, then the present invention is also intended to comprise these change and modification.
Claims (10)
1. an array base palte, comprises substrate and is positioned at the thin film transistor (TFT) pel array on described substrate, it is characterized in that, also comprise:
One between described pel array and described substrate or the electroluminescent device of multiple transmitting whites that arranges with layer, described electroluminescent device respective pixel array region; And described electroluminescent device is insulated by transparent insulating layer mutually with described pel array;
The switching transistor that multiple and described each electroluminescent device one_to_one corresponding between described transparent insulating layer with described substrate is connected.
2. array base palte according to claim 1, is characterized in that, described array base palte comprises multiple electroluminescent devices that same layer is arranged, and each electroluminescent device is the list structure be parallel to each other of the relative two ends extension along described substrate.
3. array base palte according to claim 2, it is characterized in that, described electroluminescent device comprises the negative electrode be oppositely arranged in strip and anode, and the electroluminescence layer between described anode and negative electrode, described negative electrode, electroluminescence layer and anode arrange on the substrate in the mode of lamination;
The anode of described electroluminescent device is connected with the drain electrode of described switching transistor, and the negative electrode of described electroluminescent device is connected with the first power supply; Or the anode of described electroluminescent device is connected with described first power supply, the negative electrode of described electroluminescent device is connected with the drain electrode of described switching transistor.
4. array base palte according to claim 3, is characterized in that, described each switching transistor is positioned at the same side of described each electroluminescent device;
Also comprise: the grid line be connected with the grid of each switching transistor, and the data line be connected with the source electrode of each switching transistor, this data line is connected with the second power supply.
5. array base palte according to claim 3, is characterized in that, described electroluminescence layer is the electroluminescence layer emitted white light that electroluminescent organic material is formed, or the electroluminescence layer emitted white light that quanta point electroluminescent material is formed.
6. array base palte according to claim 3, is characterized in that, the electroluminescence layer that described electroluminescence layer is integrated or the electroluminescence layer be made up of multiple separate electroluminescence layer unit with setting pattern.
7. array base palte according to claim 6, is characterized in that, the setting pattern of described electroluminescence layer unit be rectangle, rhombus, circle, triangle, trapezoidal in one or more.
8. array base palte according to claim 3, it is characterized in that, described electroluminescent device also comprises electron injecting layer between described negative electrode and described electroluminescence layer and electron transfer layer, and hole injection layer between described anode and described electroluminescence layer and hole transmission layer.
9. a display panels, is characterized in that, comprises the color membrane substrates and array base palte that are oppositely arranged, and the liquid crystal layer between described color membrane substrates and array base palte;
Wherein, described array base palte is the array base palte described in the arbitrary claim of claim 1-8.
10. a display device, is characterized in that, comprises display panels according to claim 9 and drives this display panels to realize the driving circuit of image display.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310228681.2A CN103323975B (en) | 2013-06-08 | 2013-06-08 | A kind of array base palte, display panels and display device |
| PCT/CN2013/089462 WO2014194637A1 (en) | 2013-06-08 | 2013-12-14 | Array substrate, liquid crystal display panel and display device |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201310228681.2A CN103323975B (en) | 2013-06-08 | 2013-06-08 | A kind of array base palte, display panels and display device |
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| CN103323975A CN103323975A (en) | 2013-09-25 |
| CN103323975B true CN103323975B (en) | 2015-09-23 |
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| CN103323975B (en) * | 2013-06-08 | 2015-09-23 | 北京京东方光电科技有限公司 | A kind of array base palte, display panels and display device |
| CN103525406B (en) | 2013-10-21 | 2015-08-26 | 京东方科技集团股份有限公司 | A kind of laminated film and preparation method thereof, sealed cell and optoelectronic device |
| CN103779509A (en) | 2014-01-27 | 2014-05-07 | 京东方科技集团股份有限公司 | Luminescent device, manufacturing method thereof and display panel |
| CN104516150B (en) * | 2015-01-28 | 2017-07-21 | 京东方科技集团股份有限公司 | A kind of display panel, its preparation method and display device |
| CN105842773A (en) * | 2016-03-30 | 2016-08-10 | 乐视控股（北京）有限公司 | Self-light-emitting light guide plate, backlight module and display device |
| CN107195782A (en) * | 2017-05-18 | 2017-09-22 | 深圳市华星光电技术有限公司 | Thin film transistor (TFT) preparation method, array substrate manufacturing method and display device |
| US10818856B2 (en) | 2017-05-18 | 2020-10-27 | Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Method for fabricating thin film transistor, method for fabricating array substrate, and a display apparatus |
| CN113629116B (en) * | 2021-07-30 | 2022-06-07 | 惠科股份有限公司 | Array substrate, display panel and manufacturing method of array substrate |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101424846A (en) * | 2007-10-29 | 2009-05-06 | 北京京东方光电科技有限公司 | TFT-LCD array substrate, liquid crystal display panel and method for producing same |
| CN102998845A (en) * | 2012-12-11 | 2013-03-27 | 京东方科技集团股份有限公司 | Liquid crystal display (LCD) and display device |
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| KR100853769B1 (en) * | 2000-12-29 | 2008-08-25 | 엘지디스플레이 주식회사 | Liquid crystal display and manufacturing method of the same |
| GB2403023A (en) * | 2003-06-20 | 2004-12-22 | Sharp Kk | Organic light emitting device |
| CN103323975B (en) * | 2013-06-08 | 2015-09-23 | 北京京东方光电科技有限公司 | A kind of array base palte, display panels and display device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101424846A (en) * | 2007-10-29 | 2009-05-06 | 北京京东方光电科技有限公司 | TFT-LCD array substrate, liquid crystal display panel and method for producing same |
| CN102998845A (en) * | 2012-12-11 | 2013-03-27 | 京东方科技集团股份有限公司 | Liquid crystal display (LCD) and display device |
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