WO2014192296A1 - Circuit à réactance variable - Google Patents

Circuit à réactance variable Download PDF

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Publication number
WO2014192296A1
WO2014192296A1 PCT/JP2014/002823 JP2014002823W WO2014192296A1 WO 2014192296 A1 WO2014192296 A1 WO 2014192296A1 JP 2014002823 W JP2014002823 W JP 2014002823W WO 2014192296 A1 WO2014192296 A1 WO 2014192296A1
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WO
WIPO (PCT)
Prior art keywords
reactance
variable
reactance element
variable circuit
circuit according
Prior art date
Application number
PCT/JP2014/002823
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English (en)
Japanese (ja)
Inventor
直樹 牛山
城石　久徳
荻原　淳
Original Assignee
パナソニックＩｐマネジメント株式会社
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Priority to JP2015519649A priority Critical patent/JPWO2014192296A1/ja
Publication of WO2014192296A1 publication Critical patent/WO2014192296A1/fr

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00—Measuring force or stress, in general
    • G01L1/14—Measuring force or stress, in general by measuring variations in capacitance or inductance of electrical elements, e.g. by measuring variations of frequency of electrical oscillators
    • G01L1/142—Measuring force or stress, in general by measuring variations in capacitance or inductance of electrical elements, e.g. by measuring variations of frequency of electrical oscillators using capacitors
    • G01L1/144—Measuring force or stress, in general by measuring variations in capacitance or inductance of electrical elements, e.g. by measuring variations of frequency of electrical oscillators using capacitors with associated circuitry
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/12—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in capacitance, i.e. electric circuits therefor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00—Measuring force or stress, in general
    • G01L1/14—Measuring force or stress, in general by measuring variations in capacitance or inductance of electrical elements, e.g. by measuring variations of frequency of electrical oscillators
    • G01L1/142—Measuring force or stress, in general by measuring variations in capacitance or inductance of electrical elements, e.g. by measuring variations of frequency of electrical oscillators using capacitors
    • G01L1/148—Measuring force or stress, in general by measuring variations in capacitance or inductance of electrical elements, e.g. by measuring variations of frequency of electrical oscillators using capacitors using semiconductive material, e.g. silicon

Definitions

  • the present invention relates to a reactance variable circuit.
  • Patent Document 1 is known as a technique for detecting a change in distortion.
  • This patent document 1 discloses a sensor having a resonator circuit.
  • the charge capacity changes due to mechanical distortion of the capacitor included in the resonator circuit.
  • the temporal change of the strain applied to the element embedded in the living body including the person and the animal is determined.
  • the living body implantable sensor of Patent Document 1 does not have a configuration capable of correcting the total reactance value. Accordingly, the resonance frequency of each sensor varies depending on manufacturing variations and mounting variations. Although there is an existing technique for correcting the total reactance value, downsizing and cost reduction of the module are desired.
  • an object of the present invention is to provide a variable reactance circuit that can downsize a configuration capable of correcting a resonance frequency and can be realized at low cost.
  • the reactance variable circuit includes a variable reactance element whose reactance varies due to an external force, and one or more correction reactance elements connected in parallel to the variable reactance element,
  • the correction reactance element includes a reactance element and a selection unit that is connected to the reactance element and can select connection or non-connection of the reactance element with respect to the variable reactance element.
  • the reactance variable circuit according to the second aspect of the present invention is the reactance variable circuit according to the first aspect, wherein the reactance element is insensitive to an external force.
  • a reactance variable circuit according to a third aspect of the present invention is the reactance variable circuit according to the first or second aspect, and includes a fixed inductor connected in parallel to the variable reactance element and the correction reactance element. It is characterized by having.
  • a reactance variable circuit according to a fourth aspect of the present invention is the reactance variable circuit according to any one of the first to third aspects, wherein the reactance element is a capacitor.
  • a reactance variable circuit according to a fifth aspect of the present invention is the reactance variable circuit according to the fourth aspect, wherein the reactance variable circuit includes a plurality of the capacitors in parallel with the variable reactance element, and among the plurality of capacitors, The capacitor having the largest capacitance value is disposed at a position closest to the variable reactance element.
  • a reactance variable circuit according to a sixth aspect of the present invention is the reactance variable circuit according to any one of the first to fifth aspects, wherein the selection unit is a fuse connected in series to the reactance element. Or it is an antifuse.
  • a reactance variable circuit according to a seventh aspect of the present invention is the reactance variable circuit according to any one of the first to fifth aspects, wherein the selection unit is configured by a fuse, and the fuse material and the fuse The material of the electrode to which the reactance element is connected is the same.
  • a reactance variable circuit according to an eighth aspect of the present invention is the reactance variable circuit according to any one of the first to seventh aspects, wherein the selection unit includes a fuse, and an electric signal is supplied to the fuse. A signal supply terminal to be supplied is connected, and a Zener diode is provided between the fuse and the signal supply terminal.
  • a reactance variable circuit according to a ninth aspect of the present invention is the reactance variable circuit according to any one of the first to eighth aspects, and is connected in parallel with the variable reactance element and the correction reactance element.
  • another correction reactance element that can be switched between connection and non-connection with the variable reactance element is provided.
  • the reactance variable circuit according to the tenth aspect of the present invention is the reactance variable circuit according to the ninth aspect, wherein the selection section and the reactance element are connected in series, and the selection section is connected.
  • the positive electrode line is electrically divided into a plurality of parts, and the negative electrode line is configured as a conductive wire common to the correction reactance element and the other correction reactance element.
  • a reactance variable circuit according to an eleventh aspect of the present invention is the reactance variable circuit according to the seventh to tenth aspects, wherein the reactance variable circuit is a semiconductor substrate, an insulating film formed on the semiconductor substrate, and the insulating film.
  • the relaxation layer is made of a material that is harder to carbonize than the sealing layer.
  • a reactance variable circuit according to a twelfth aspect of the present invention is the reactance variable circuit according to the eleventh aspect, wherein the relaxation layer is formed in a region where the selection portion is formed on an upper surface of the protective film. It is formed selectively.
  • a reactance variable circuit according to a thirteenth aspect of the present invention is the reactance variable circuit according to the eleventh or twelfth aspect, wherein the selection unit is gathered at a central portion in a planar direction of the semiconductor substrate. It is formed in this.
  • FIG. 1 is a circuit diagram showing a configuration of a reactance variable circuit shown as an embodiment of the present invention.
  • FIG. 2 is a circuit diagram showing a configuration of a reactance variable circuit shown as an embodiment of the present invention.
  • FIG. 3 is a circuit diagram showing a configuration including a fixed inductor in the reactance variable circuit shown as an embodiment of the present invention.
  • FIG. 4 is a circuit diagram showing a configuration including a capacitor in the reactance variable circuit shown as an embodiment of the present invention.
  • FIG. 5 is a circuit diagram showing another configuration including a capacitor in the reactance variable circuit shown as an embodiment of the present invention.
  • FIG. 6 is a circuit diagram showing a configuration including a Zener diode in the reactance variable circuit shown as an embodiment of the present invention.
  • FIG. 1 is a circuit diagram showing a configuration of a reactance variable circuit shown as an embodiment of the present invention.
  • FIG. 2 is a circuit diagram showing a configuration of a reactance variable circuit shown as an embodiment of the present
  • FIG. 7 is a circuit diagram showing a configuration including a plurality of correction reactance element units in the reactance variable circuit shown as an embodiment of the present invention.
  • FIG. 8 is a schematic top view for explaining a semiconductor device constituting the reactance variable circuit shown as the embodiment of the present invention.
  • FIG. 9 is an enlarged cross-sectional view seen from the AA direction of FIG.
  • FIG. 10 is an enlarged cross-sectional view seen from the GG direction of FIG.
  • FIG. 11 is an enlarged cross-sectional view seen from the AA direction for explaining a modification of FIG.
  • FIG. 12 is a schematic top view for explaining a modification of the semiconductor device constituting the reactance variable circuit shown as the embodiment of the present invention.
  • the reactance variable circuit shown as an embodiment of the present invention is configured, for example, as shown in FIG.
  • This reactance variable circuit includes a variable reactance element 1 whose reactance varies due to an external force, and one or more correction reactance elements 4 connected in parallel to the variable reactance element 1.
  • the correction reactance element 4 includes a reactance element 3 and a selection unit 2 connected to the reactance element 3 and capable of selecting connection or non-connection of the reactance element 3 to the variable reactance element 1.
  • the variable reactance element 1 and the reactance element 3 include all reactance elements such as capacitors and inductors.
  • the reactance element 3 is insensitive to external forces.
  • the selection unit 2 includes all modes as long as the reactance element 3 can be selected.
  • an embodiment of the reactance variable circuit will be described.
  • the reactance variable circuit shown as an embodiment of the present invention is configured, for example, as shown in FIG.
  • the reactance variable circuit includes a variable reactance element Cv and one or more correction reactance elements.
  • the variable reactance element Cv and the correction reactance element are connected in parallel between the common positive electrode line P and negative electrode line N.
  • the correcting reactance element includes reactance elements C1 to C4 and selection units f1 to f4.
  • the reactance element C1 and the selector f1, the reactance element C2 and the selector f2, the reactance element C3 and the selector f3, and the reactance element C4 and the selector f4 are connected in series.
  • One ends of the selectors f1 to f4 are connected to the positive line P, and the other ends are connected to reactance elements C1 to C4.
  • One ends of the reactance elements C1 to C4 are connected to the other ends of the selectors f1 to f4, and the other ends of the reactance elements C1 to C4 are connected to the negative electrode line N.
  • the selection units f1 to f4 are connected to the reactance elements C1 to C4, and are configured to be able to select connection or non-connection of the reactance elements C1 to C4 with respect to the variable reactance element Cv.
  • the reactance value of the variable reactance element Cv varies due to mechanical distortion.
  • Factors of mechanical distortion in the variable reactance element Cv include ambient stress, acceleration, pressure (such as blood pressure), sound waves, and ultrasonic waves.
  • a plurality of correction reactance elements are provided in parallel with the variable reactance element Cv.
  • amendment shown in FIG. 2 is four, this is an illustration to the last. Therefore, the number of correction reactance elements is not limited to four, and may be a plurality other than four. Further, the correction reactance element may be one instead of a plurality.
  • the selectors f1 to f4 change their states so that the reactance elements C1 to C4 with respect to the variable reactance element Cv are connected or disconnected when an electric signal is supplied.
  • the selection units f1 to f4 are electrically connected between the signal supply terminals t1 to t4 extending from the reactance elements C1 to C4 side of the selection units f1 to f4 and the terminal V1 of the positive line P.
  • a signal is supplied.
  • the selection units f1 to f4 switch the electrical continuity between the positive line P and the reactance elements C1 to C4 in response to the supply of the electrical signal.
  • the selection units f1 to f4 are configured not to return to the state before the electric signal is supplied when the electric signal is turned on or off. As a result, the reactance variable circuit is configured to be able to hold the reactance irreversibly by the selection units f1 to f4.
  • the reactance value of the variable reactance circuit is a value including the variable reactance element Cv and the reactance elements C1 to C4. It becomes.
  • the reactance value of the variable reactance circuit is a value including the variable reactance element Cv and the reactance elements C2 to C4.
  • the reactance variable circuit can correct the reactance value more finely by providing more correcting reactance elements.
  • the reactance element includes an inductor and a capacitor, it can be corrected to a resonance frequency determined by those values.
  • the configuration capable of correcting the total reactance value can be reduced in size.
  • the reactance element is composed of an inductor and a capacitor
  • the configuration capable of correcting the resonance frequency can be reduced in size.
  • the configuration for correcting the resonance frequency is not a mechanical mechanism. For this reason, the reactance variable circuit does not change with time and has good impact resistance.
  • a fixed inductor L may be connected in parallel with the variable reactance element Cv and the correction reactance element.
  • the fixed inductor L causes electromagnetic induction with other inductors (not shown).
  • the reactance variable circuit can be powered by electromagnetic induction, so that the circuit does not need to have a power supply unit, and can be miniaturized and made wireless.
  • the reactance element is preferably capacitors C1 to C4 as shown in FIGS.
  • the variable reactance element Cv and the capacitors C1 to C4 as the reactance elements can be simultaneously formed. As a result, the semiconductor process for manufacturing the reactance variable circuit can be facilitated.
  • the capacitor can be easily set according to the thickness of the dielectric, the degree of freedom in design is higher than that of the inductor when manufactured by a semiconductor process. Therefore, the dynamic range of the reactance value that can be corrected by the correcting reactance element can be widened without increasing the chip size.
  • the plurality of capacitors C1 to C4 desirably include a capacitor having a large capacitance value and a small capacitance in stages. Thereby, the resolution of the capacitance value to be corrected can be improved.
  • the capacitors as the reactance elements C1 to C4 have the capacitor Cmax having the largest capacitance value disposed at a position closest to the variable reactance element Cv.
  • the capacitor Cmax has a higher capacitance value than the other capacitors C1 to C3.
  • this reactance variable circuit by reducing the wiring resistance between the capacitor Cmax and the variable reactance element Cv, even if the capacitor Cmax having a large capacitance value is provided, the Q value deteriorates due to the influence of the wiring resistance. Can be suppressed.
  • the selection unit may be configured by fuses f1 to f4 or antifuses f1 to f4 connected in series to reactance elements C1 to C4. .
  • the selection unit is constituted by fuses f1 to f4, an electrical signal is not supplied to the fuse corresponding to the reactance element that is desired to be connected in parallel to the variable reactance element Cv among the reactance elements C1 to C4.
  • an electrical signal is supplied to a fuse corresponding to a reactance element that does not require parallel connection to the variable reactance element Cv.
  • the fuse supplied with the electric signal is electrically cut off. As a result, the reactance element connected to the fuse interrupted by the electrical signal is disconnected from the variable reactance element Cv.
  • the selection unit is constituted by the antifuses f1 to f4
  • an electric signal is supplied to the antifuses f1 to f4 connected to the reactance elements C1 to C4 to be connected in parallel to the variable reactance element Cv.
  • the antifuses f1 to f4 are electrically connected.
  • the reactance elements C1 to C4 connected to the antifuses f1 to f4 conducted by the electric signal are connected to the variable reactance element Cv.
  • the selection section can be formed by a simple semiconductor process in which fuses or antifuses f1 to f4 are formed on the reactance elements C1 to C4.
  • the selection unit is constituted by fuses f1 to f4, and the material of the fuses f1 to f4 and the material of the electrode to which the reactance elements C1 to C4 are connected are the same.
  • materials for the fuses f1 to f4 and the electrodes include aluminum (Al) and polysilicon (Si).
  • the parts from the fuses f1 to f4 as the selection part to the electrodes of the reactance elements C1 to C4 are formed of the same material.
  • electrodes are formed so as to narrow the current path width at the portions to be the fuses f1 to f4.
  • the fuses f1 to f4 and the one-side electrodes of the reactance elements C1 to C4 can be formed simultaneously. For this reason, the number of semiconductor process steps is reduced, and a reactance variable circuit can be manufactured at low cost.
  • the reactance variable circuit described above may be configured as shown in FIG.
  • the selection unit is configured by fuses f1 to f4.
  • Signal supply terminals t1 to t4 for supplying electric signals are connected to the fuses f1 to f4.
  • Zener diodes T1 to T4 are provided between the fuses f1 to f4 and the signal supply terminals t1 to t4.
  • this reactance variable circuit even if an unexpectedly high voltage is applied between the signal supply terminals t1 to t4 and the fuses f1 to f4, the zener diodes T1 to T4 avoid erroneous disconnection of the fuses f1 to f4. it can. Thereby, according to this reactance variable circuit, it can suppress that the total reactance value of a reactance variable circuit fluctuates unexpectedly, and can improve reliability.
  • the reactance variable circuit described above may include another correction reactance element (correction reactance element section B2) connected in parallel with the variable reactance element Cv and the reactance elements C1 to C4 as shown in FIG. Good.
  • a correction reactance element B2 including other correction reactance elements is used as a variable reactance element Cv for a correction reactance element B1 including selection sections f1 to f4 and reactance elements C1 to C4. Parallel connection is possible.
  • the correction reactance element unit B2 includes three correction reactance elements including selection units f5 to f7 and reactance elements C5 to C7. Similarly to the correction reactance element described above, the selection units f5 to f7 and the reactance elements C5 to C7 are connected in series.
  • a plurality of other reactance elements for correction are provided in parallel with the variable reactance element Cv.
  • the number of other reactance elements for correction is not limited to three, and may be a plurality other than three. Further, the number of other correction reactance elements may be one instead of a plurality.
  • the reactance variable circuit can correct the reactance value (resonance frequency) more finely by providing more other reacting reactance elements.
  • the correction reactance element B1 is connected to the positive line P1 connected to the terminal V1.
  • the correction reactance element portion B2 is connected to the positive line P2 connected to the terminal V2.
  • the positive line P1 connected to the terminal V1 and the positive line P2 connected to the terminal V2 electrically divide the correction reactance element part B1 and the correction reactance element part B2 into a plurality.
  • An external switch circuit can be connected between the positive line P1 connected to the terminal V1 and the positive line P2 connected to the terminal V2.
  • a magnet switch that can be operated remotely, a bimetal switch that operates according to body temperature, or the like is used in a living body implanting type.
  • the external switch circuit can switch whether or not the correction reactance element B2 is electrically connected to the variable reactance element Cv and the correction reactance element B1.
  • the other reactance elements for correction can be configured so that connection or non-connection with the variable reactance element Cv can be switched as appropriate.
  • the resonance frequency of the reactance variable circuit does not include the reactance elements C5 to C7. To be determined.
  • the resonance frequency of the reactance variable circuit is determined including the reactance elements C5 to C7. Is done. That is, the resonance frequency is determined by the fixed inductor L, the variable reactance element Cv, the fixed capacitor Cs, and the reactance elements C1 to C4 and C5 to C7.
  • the reactance values of the correction reactance element unit B1 and the correction reactance element unit B2 can be corrected depending on the states of the selection units f5 to f7.
  • the resonance frequency in the variable reactance circuit can be shifted by switching the connection or non-connection of the correction reactance element B2 by the external switch circuit. Therefore, if this reactance variable circuit is mounted on a living body-embedded sensor or the like, the resonance frequency can be greatly shifted according to the intention of the sensor user even after the sensor is embedded in a human or animal. Multifunctionalization can be realized.
  • the number of the reactance reactance element units for correction be about two to five.
  • the resonance frequency of the reactance variable circuit can be shifted in five steps.
  • variable reactance circuit shown in FIG. 7 is provided with a fixed capacitor Cs for the variable reactance element Cv.
  • the reactance value of the entire reactance variable circuit can be offset.
  • whether or not the fixed capacitor Cs is provided is arbitrary, and is not an essential configuration.
  • each correction reactance element unit may be configured as an individual chip or an integrated chip.
  • the selectors f1 to f7 and the reactance elements C1 to C7 are connected in series, respectively, and a plurality of positive lines P1 and P2 to which the selectors f1 to f7 are connected are electrically connected. It is divided.
  • the negative electrode line N is configured as a common wire in the correction reactance element portion B1 and the correction reactance element portion B2.
  • the negative electrode line N is a semiconductor process in which a reactance variable circuit is manufactured on a single chip. It can be configured as a substrate. Therefore, this reactance variable circuit can omit the man-hours in the semiconductor process. In addition, this reactance variable circuit can contribute to miniaturization of the chip.
  • the semiconductor device B is corrected by forming an insulating film 52, a conductive layer 53, a protective film 54, a relaxation layer 55, and a sealing layer 56 in this order on the semiconductor substrate 51.
  • the semiconductor substrate 51 is made of a semiconductor material such as silicon (Si).
  • the insulating film 52 is made of an insulator such as a silicon oxide film (SiO 2 ) or a silicon nitride film (Si 3 N 4 ).
  • the insulating film 52 is formed on the entire surface of the semiconductor substrate 51 by, for example, chemical vapor deposition (CVD).
  • the conductive layer 53 is made of a metal material containing a metal such as aluminum (Al).
  • the conductive layer 53 is formed between the insulating film 52 and the protective film 54.
  • the conductive layer 53 is formed on the upper surface of the insulating film 52 by a sputtering method, an electron beam vacuum vapor deposition method, or the like, and then patterned by reactive ion etching (RIE) using a mask patterned by a photolithography technique.
  • RIE reactive ion etching
  • the patterned conductive layer 53 constitutes positive lines P1 and P2, selectors f1 to f7, and signal supply terminals t1 to t7.
  • Each of the positive electrodes P1 and P2 generally extends in a direction parallel to each other on the upper surface of the insulating film 52.
  • Each of the selection portions f1 to f4 extends in a comb shape from the positive electrode line P1.
  • Each of the selection units f5 to f7 extends in a comb shape from the positive electrode line P2.
  • the conductive layer 53 is formed to be narrow in the selection portions f1 to f7 so as to form a fuse having a predetermined rating.
  • the signal supply terminals t1 to t7 are connected to the selectors f1 to f7 so as to be connected to the other ends of the positive lines P1 and P2 of the selectors f1 to f7, respectively.
  • the patterned conductive layer 53 constitutes capacitors C1 to C7 together with the semiconductor substrate 51 and the insulating film 52, as shown in FIG.
  • the conductive layers 53 constituting the capacitors C1 to C7 are connected to the signal supply terminals t1 to t7 so that one end sides thereof are connected to the signal supply terminals t1 to t7, respectively.
  • the conductive layers 53 constituting the capacitors C1 to C7 are formed to have different areas, so that the capacitors C1 to C7 have different capacitances.
  • the semiconductor substrate 51 and the conductive layer 53 constitute a pair of fixed electrodes that are relatively fixed to each other in each of the capacitors C1 to C7.
  • the pair of fixed electrodes are formed so as to sandwich the insulating film 52 so that the distance between them is not changed even when an external force is applied. That is, the capacitors C1 to C7 are insensitive to the external force because the capacitance does not change even when the external force is applied.
  • the protective film 54 is made of an insulator such as a silicon oxide film (SiO 2 ) or a silicon nitride film (Si 3 N 4 ).
  • the protective film 54 is formed on the upper surfaces of the insulating film 52 and the conductive layer 53 so as to cover at least the selection portions f1 to f7 by, for example, a chemical vapor deposition (CVD) method.
  • CVD chemical vapor deposition
  • the protective film 54 is selectively formed so as to expose the terminals V1 and V2, the signal supply terminals t1 to t7 connected to the positive lines P1 and P2, and the terminal COM connected to the negative line N, respectively. Is done.
  • the terminal COM is constituted by, for example, a conductive layer 53 formed so as to penetrate the insulating film 52 and be electrically connected to the semiconductor substrate 51.
  • the semiconductor substrate 51 constitutes a negative electrode line N by connecting the terminal COM to a negative electrode such as a ground potential.
  • the relaxation layer 55 is made of an insulating resin material such as silicone resin.
  • the relaxation layer 55 covers at least the region D1 in which the selection portions f1 to f7 are formed, for example, by potting after the wiring to the terminals V1, V2 and COM and the signal supply terminals t1 to t7 is connected. It is formed on the upper surface of the protective film 54.
  • the sealing layer 56 is made of a resin material such as an epoxy resin. The sealing layer 56 is formed on the upper surface of the protective film 54, the relaxation layer 55, and the like by, for example, potting.
  • the relaxation layer 55 is made of a material that has elasticity and is less likely to be carbonized than the sealing layer 56.
  • the relaxing layer 55 can reduce the destruction of the semiconductor device B by absorbing the impact when the protective film 54 is broken by the gas generated when the selection portions f1 to f7 are melted.
  • the relaxation layer 55 prevents the sealing layer 56 from carbonizing due to the Joule heat of the selection portions f1 to f7 and prevents both ends of the cut selection portions f1 to f7 from being short-circuited, thereby improving the reliability of the semiconductor device B. Can be improved.
  • the relaxing layer 55 is also formed above the capacitors C1 to C7. However, the relaxing layer 55 only needs to be formed at least in the region of the selection portions f1 to f7. It may be omitted above C7.
  • the relaxation layer 55 may be selectively formed only in the region D1 where the selection portions f1 to f7 are formed, for example, by photolithography.
  • the interface between the sealing layer 56 and the relaxing layer 55 is reduced and the interface with the protective film 54 is increased.
  • the sealing layer 56 can be made into the structure which adhesiveness improves and does not peel easily in an interface.
  • the semiconductor device B may include selection portions f1 to f7 formed so as to be gathered at a central portion in the planar direction of the semiconductor substrate 51.
  • the relaxing layer 55 may be formed at least in the region D2 where the selection portions f1 to f7 in the central portion of the semiconductor substrate 51 are formed. For this reason, in the step of forming the relaxing layer 55, even if uneven coating occurs at the end of the semiconductor substrate 51, the relaxing layer 55 is formed in the region D2 where the selection portions f1 to f7 are formed. be able to.
  • capacitors C1 to C4 and C5 to C7 connected to the selection units f1 to f4 and f5 to f7, respectively, have been described one by one, the present invention is not limited to this.
  • a plurality of capacitors may be connected in series to each of the selection units f1 to f4 and f5 to f7.
  • the number of capacitors connected in series to each of the selection units f1 to f4 and f5 to f7 may be different.
  • ambient stress, acceleration, pressure (blood pressure, etc.), sound waves, ultrasonic waves, etc. are exemplified as the external force, and the reactance value varies due to mechanical distortion caused by the external force.
  • this is only an example, and it is not limited to mechanical strain as long as the reactance value fluctuates due to external force.
  • the above embodiment is an example of the present invention.
  • the present invention includes various embodiments that are not described here, such as a configuration in which the reactance variable circuits described in the above embodiments are mutually applied.
  • the present invention is not limited to the above-described embodiment, and various modifications can be made depending on the design and the like as long as the technical idea according to the present invention is not deviated from this embodiment. Of course, it is possible to change.
  • the correction reactance element includes the selection unit that can select connection or non-connection of the reactance element to the variable reactance element, so that the configuration capable of correcting the resonance frequency can be reduced in size and cost. realizable.

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Abstract

La présente invention concerne un circuit à réactance variable comprenant : un élément à réactance variable (Cv), dont la réactance est modifiée par une force externe ; et un ou plusieurs éléments à réactance utilisés à des fins de correction, lesquels sont connectés en parallèle avec l'élément à réactance variable (Cv). Chaque élément à réactance utilisé à des fins de correction comprend des unités à réactance (C1-C4) et des parties de sélection (f1-f4) qui sont connectées aux unités à réactance (C1-C4) et qui sont capables de sélectionner une connexion ou une déconnexion entre les unités à réactance (C1-C4) et l'élément à réactance variable (Cv).
PCT/JP2014/002823 2013-05-31 2014-05-28 Circuit à réactance variable WO2014192296A1 (fr)

Priority Applications (1)

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JP2016212108A (ja) * 2015-05-11 2016-12-15 株式会社 ハイディープＨｉＤｅｅｐ Ｉｎｃ． 圧力センシング装置、圧力検出器及びこれらを含む装置

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JP3030082B2 (ja) * 1990-06-27 2000-04-10 チェックポイント システムズ，インコーポレイテッド 電子セキュリティ・システムと共に用いられる動作状態と非動作状態を選択可能なセキュリティ・タグ
JP2012078337A (ja) * 2010-09-08 2012-04-19 Denso Corp 容量式物理量検出装置

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JP3030082B2 (ja) * 1990-06-27 2000-04-10 チェックポイント システムズ，インコーポレイテッド 電子セキュリティ・システムと共に用いられる動作状態と非動作状態を選択可能なセキュリティ・タグ
JP2012078337A (ja) * 2010-09-08 2012-04-19 Denso Corp 容量式物理量検出装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016212108A (ja) * 2015-05-11 2016-12-15 株式会社 ハイディープＨｉＤｅｅｐ Ｉｎｃ． 圧力センシング装置、圧力検出器及びこれらを含む装置

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