WO2014190697A1 - 显示基板及其制备方法、显示装置 - Google Patents

显示基板及其制备方法、显示装置 Download PDF

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Publication number
WO2014190697A1
WO2014190697A1 PCT/CN2013/088136 CN2013088136W WO2014190697A1 WO 2014190697 A1 WO2014190697 A1 WO 2014190697A1 CN 2013088136 W CN2013088136 W CN 2013088136W WO 2014190697 A1 WO2014190697 A1 WO 2014190697A1
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WIPO (PCT)
Prior art keywords
substrate
display
crystal layer
color filter
crystal
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Ceased
Application number
PCT/CN2013/088136
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English (en)
French (fr)
Inventor
王孟杰
杜玙璠
陈玉琼
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BOE Technology Group Co Ltd
Beijing BOE Display Technology Co Ltd
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BOE Technology Group Co Ltd
Beijing BOE Display Technology Co Ltd
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Application filed by BOE Technology Group Co Ltd, Beijing BOE Display Technology Co Ltd filed Critical BOE Technology Group Co Ltd
Priority to US14/376,455 priority Critical patent/US20150340382A1/en
Publication of WO2014190697A1 publication Critical patent/WO2014190697A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B32/00—Thermal after-treatment of glass products not provided for in groups C03B19/00, C03B25/00 - C03B31/00 or C03B37/00, e.g. crystallisation, eliminating gas inclusions or other impurities; Hot-pressing vitrified, non-porous, shaped glass products
    • C03B32/02—Thermal crystallisation, e.g. for crystallising glass bodies into glass-ceramic articles
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B1/00—Single-crystal growth directly from the solid state
    • C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
    • C30B1/023—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing from solids with amorphous structure
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133514—Colour filters
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133528—Polarisers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0212—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or coating of substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/411—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by materials, geometry or structure of the substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

Definitions

  • Embodiments of the present invention relate to a display substrate, a method of fabricating the same, and a display device. Background technique
  • a TFT-LCD Thin Film Transistor-Liquid Crystal Display
  • a TFT-LCD mainly includes an array substrate 20, a color filter substrate 30, and a liquid crystal layer 40 between the two substrates, and further includes The first polarizer 50 on the side of the liquid crystal layer of the array substrate and the second polarizer 60 on the side of the liquid crystal layer of the color filter substrate.
  • the array substrate 20 includes a first glass substrate 20a, and the color filter substrate includes a second glass substrate 30a.
  • both the first glass substrate 20a and the second glass substrate 30a are relatively thin, which results in the first glass substrate 20a and the second glass substrate 30a being relatively fragile.
  • An embodiment of the present invention provides a display substrate including a substrate substrate and a display element structure on the substrate substrate, wherein the substrate substrate has a crystal layer in which crystal grains are arranged in a predetermined direction.
  • the crystal layer is located on a surface layer of the substrate.
  • the thickness of the crystal layer is equal to the thickness of the entire substrate substrate.
  • the crystal layer is a ruthenium ruthenate crystal layer.
  • the substrate substrate is a glass-ceramic substrate.
  • the display substrate is an array substrate
  • the display element structure on the substrate substrate includes a thin film transistor and a pixel electrode.
  • the display panel is a color film substrate, and display elements on the substrate substrate
  • the structure includes a black matrix and a color film.
  • the crystal layer is located on a surface layer of the substrate substrate on which the opposite side of the display element is formed.
  • Another embodiment of the present invention provides a method for preparing a display substrate, comprising the steps of: preparing a village substrate, wherein the substrate substrate has a crystal layer in which crystal grains are arranged in a predetermined direction; The display element structure is formed thereon.
  • the crystal layer is formed on one surface of the substrate.
  • the thickness of the crystal layer is equal to the thickness of the entire substrate substrate.
  • the preparing a substrate substrate includes:
  • crystallization temperature range When the crystallization temperature range is reached, grain-oriented microcrystallization treatment is performed, and crystal layers in which crystal grains are arranged in a predetermined direction are formed in the substrate.
  • a temperature field is applied to the glass to direct the grains to grow in the predetermined direction.
  • Still another embodiment of the present invention provides a display device including a display substrate according to an embodiment of the present invention.
  • the display device includes two display panels that are opposite to each other, one of the display panels is an array substrate, and the other display panel is a color film substrate;
  • the display device further includes a liquid crystal layer disposed between the array substrate and the color filter substrate.
  • the crystal substrate of the substrate substrate located in the array substrate and the substrate substrate located in the color filter substrate has a polarizing effect, and the substrate substrate located in the array substrate and the color The polarization directions of the crystal layers of the substrate substrate in the film substrate are perpendicular to each other.
  • a crystal layer in the substrate substrate in the array substrate is located on a side of the array substrate away from the liquid crystal layer; a crystal layer in the substrate substrate in the color filter substrate is located in the color film The substrate is away from the side of the liquid crystal layer.
  • Embodiments of the present invention provide a display substrate, a method for fabricating the same, and a display device.
  • the display substrate includes a substrate substrate and a display element structure on the substrate substrate, wherein the substrate substrate has a crystal grain along a predetermined direction. Arranging the crystal layer; thus, on the one hand, because the substrate of the village has crystal The ordered crystal layer has higher mechanical strength than ordinary glass, so the substrate substrate in the display substrate provided by the present invention can avoid fragile phenomenon compared with the conventional glass substrate in the prior art;
  • the display substrate is used for a display device, since the substrate substrate has a crystal layer in which the crystal grains are arranged, the incident light can be made polarized light, and can be applied to a display device that requires polarized light for incident light.
  • it is required to additionally provide a polarizer and the present invention can reduce the thickness of the display device, and can avoid problems caused by the wear of the polarizer, poor adhesion, and mura phenomenon.
  • FIG. 1 is a schematic structural view of a liquid crystal display device provided in the prior art
  • FIG. 2 is a schematic structural view 1 of a display substrate according to an embodiment of the present invention.
  • FIG. 3 is a schematic structural view 2 of a display substrate according to an embodiment of the present invention.
  • FIG. 4 is a schematic structural diagram of an array substrate according to an embodiment of the present invention.
  • FIG. 5 is a schematic structural diagram of a color filter substrate according to an embodiment of the present invention.
  • FIG. 6 is a schematic flow chart of preparing a display substrate according to an embodiment of the present invention.
  • FIG. 7 is a schematic structural diagram 1 of a display device according to an embodiment of the present disclosure.
  • FIG. 8 is a schematic structural diagram 2 of a display device according to an embodiment of the present invention. detailed description
  • the embodiment of the present invention provides a display substrate 10.
  • the display substrate includes: a substrate substrate 100 and a display element structure 200 on the substrate substrate.
  • the substrate substrate 100 has a crystal layer 100a in which crystal grains are arranged in a predetermined direction.
  • the grain is in a predetermined direction
  • the arrangement means that the crystal optical axis directions of the crystal grains are arranged in a predetermined direction.
  • the crystal structure may be a tetragonal structure while being a uniaxial crystal; at this time, the optical axis direction of the crystal coincides with the grain length direction.
  • embodiments of the invention are not limited thereto.
  • the substrate substrate here is a glass-ceramic substrate, wherein the glass-ceramic is a special composite material, which is a kind of crystal obtained by reheating and controlling the crystallization of the original glass obtained by melting and annealing at a high temperature.
  • the display element structure 200 refers to a structure that is indispensable for realizing display and is composed of layers of layers, for example, for a smallest display unit of a liquid crystal display device, on an array substrate,
  • the display element structure includes a thin film transistor, a pixel electrode, and the like; on the color filter substrate, the display element structure includes a red or green or blue color filter, a black matrix, etc.; of course, some necessary pattern layers such as a protective layer or the like are also included.
  • the thickness of the crystal layer 100a can be set according to an actual preparation process, which is not limited herein.
  • the predetermined direction needs to be polarized according to the required direction.
  • the direction of the light and the material of the crystal layer 100a are not limited herein.
  • the crystal layer is a structure in which crystal grains formed by crystals coexist with a glass phase.
  • the embodiment of the present invention provides a display substrate 10 including a substrate substrate 100 and a display element structure 200 on the substrate substrate, wherein the substrate substrate 100 has crystal grains arranged in a predetermined direction.
  • the crystal layer 100a thus, on the one hand, since the substrate substrate 100 has the crystal layer 100a in which the crystal grains are arranged, the mechanical strength is higher than that of the ordinary glass, and thus the substrate substrate 100 in the display substrate provided by the present invention Compared with the conventional glass substrate in the prior art, the fragile phenomenon can be avoided; on the other hand, when the display substrate 10 is used for a display device, since the substrate substrate 100 has the crystal layer 100a in which the crystal grains are arranged, the incident can be made.
  • the light becomes polarized light (that is, it has a polarizing effect), and can be applied to a display device that requires polarized light for incident light, and thus the present invention can reduce the thickness of the display device compared to the prior art where an additional polarizer is required. , and can avoid problems caused by the wear of the polarizer, poor adhesion, and mura phenomenon.
  • the crystal layer 100a is located on one surface layer of the substrate substrate 100.
  • the crystal layer 100a in which crystal grains are arranged in a certain direction is simultaneously grown on both surfaces of the substrate, but in the case where the crystallization is insufficient, there is a bubble in the middle portion of the substrate which is extruded by the devitrification row, The crystallized material or the like is oriented. Therefore, the substrate can be cut into two layers from the middle, and the intermediate portion can be processed to form two village substrate 100 having crystal layers 100a in which crystal grains are arranged in a certain direction, which can be accelerated. Progress, cost savings.
  • the crystal layer 100a is located on one surface layer of the substrate substrate 100, and the crystal layer 100a is located from a surface of the substrate substrate 100 to a surface of the upper and lower surfaces of the substrate substrate 100. Within a certain thickness range between its other surface. The thickness of the surface layer is determined according to the crystallization temperature, time, and the like during the heat treatment of the crystal layer 100a, and is not limited herein.
  • the crystal grains are uniformly distributed in the surface layer, in the microscopic view, in the surface layer, the crystal grains are also arranged in a certain direction.
  • the thickness of the crystal layer 100a is equal to the entire substrate of the substrate.
  • the crystal layer 100a is located within the entire thickness range from one surface of the substrate substrate 100 to the other surface thereof. Similarly, the crystallizing layer 100a is filled with the entire substrate substrate 100 by controlling the crystallization temperature, time, and the like during the heat treatment.
  • the crystal grains are uniformly distributed in the substrate of the substrate, microscopically, in the entire substrate substrate 100, the crystal grains are also arranged in a certain direction in a layer.
  • the crystal layer 100a in which the crystal grains are arranged in a certain direction is formed by heat-treating the original glass, and due to defects and low surface energy of the surface of the original glass substrate, the crystal grains of the original glass are initially subjected to heat treatment. It is easier to precipitate from the surface of the glass substrate first, and as the heating process progresses, the crystallization proceeds more fully, thereby filling the entire glass substrate. Specifically, how much temperature range and how long it is possible to precipitate crystal grains on the surface of the glass substrate, and how much temperature range to continue heating and how long to crystallize the composition, fill the entire glass substrate, and can be prepared from the original glass. Regarding the substance of the crystal layer and the like, those skilled in the art can prepare the above-described substrate according to the existing materials and techniques.
  • the heat treatment process is relatively short, and It can save process energy costs.
  • the original glass as used herein refers to a glass containing a substance capable of producing the crystal layer in ordinary glass.
  • the crystal layer be a ruthenium ruthenate crystal layer.
  • the bismuth ruthenate crystal layer can be prepared by heat treatment of the original glass.
  • the original glass may be, for example, a glass containing a mixture of SrC0 3 , BaC0 3 , Nb 2 0 5 , and SiO 2 capable of producing the bismuth ruthenate crystal grains in ordinary glass.
  • the preparation method thereof may include, for example, the following process steps:
  • the molten glass is introduced into a preheated mold, cast in air for 25 seconds, and then annealed in a furnace at 650 ° C for 12 hours to eliminate the internal stress introduced during the molding process to obtain the original glass.
  • the strontium sulphate crystal layer it can be obtained by heat treatment from the original glass prepared by the above steps.
  • the heat treatment process may include, for example, the following two stages:
  • the first stage is the nucleation treatment stage, that is, the original glass prepared above is heated at a fixed heating rate. After the temperature is raised from room temperature to the nucleation temperature, the temperature is maintained for a period of time, and a large amount of nucleation is formed. .
  • the second stage is the growth stage of the crystal grains, that is, on the basis of the above, the original glass is further heated at a fixed heating rate until the temperature reaches the crystallization temperature range, and grain oriented microcrystallization is performed to obtain crystal grains.
  • the crystal layer 100a can be formed only on the surface layer of the substrate substrate 100 or fill the entire substrate substrate 100 by controlling the crystallization temperature, time, and the like, and is specifically set according to actual conditions, and is not limited herein.
  • the grain-oriented microcrystallization treatment may be, for example, directed crystallization by a temperature gradient field to guide the crystal grains to grow in a predetermined direction, and those skilled in the art may prepare a crystal layer according to the materials included in the original glass. And the crystallization temperature range and the like, the precipitated crystal grains can be arranged in a predetermined direction.
  • the temperature gradient field here may be, for example, a process of increasing the temperature in a gradient manner; the process of the gradient heating is different, and the arrangement direction of the crystal grains is also different. Therefore, the formation period can be formed by the temperature rising process.
  • the manner of the orientation processing is not limited according to the embodiment of the present invention, and other orientation processing methods may be used.
  • the surface of the substrate substrate 100 is provided with a thin film transistor 300 and a pixel electrode 307.
  • the substrate substrate 100 is further provided with a protective layer 306, and the pixel electrode 307 is connected to the drain 305 of the thin film transistor 300 through a via provided in the protective layer 306.
  • the thin film transistor 300 includes a gate electrode 301, a gate insulating layer 302, an active layer 303, a source electrode 304, and a drain electrode 305, and the drain electrode 305 is connected to the pixel electrode 307 through a via hole provided on the protective layer 306.
  • a thin film transistor 300 and a pixel electrode 307 connected to the drain 305 of the thin film transistor and a protective layer therebetween constitute a display element structure 200.
  • the display substrate 10 is a color filter substrate 30, a black matrix 400 and a color film 500 are disposed on the surface of the substrate substrate 100.
  • the color film includes a red color filter 501, a green light group 502, and a blue color filter 503.
  • the surface of the substrate substrate 100 may be provided with a common electrode 308 (not shown in Fig. 5) or the like.
  • the black matrix 400 corresponding to the thin film transistor 300 and, for example, the red color filter 501 in contact with one side thereof constitute one display element
  • the black matrix 400 corresponding to the thin film transistor 300 and the green color filter 502, which is in contact with one side thereof also constitute a display element structure
  • the black matrix 400 corresponding to the thin film transistor 300 and one side thereof also constitutes a display element structure.
  • FIG. 4 and FIG. 5 only illustrate the case where the crystal layer 100a of the substrate substrate in the array substrate 20 and the color filter substrate 30 is located on the surface layer, but the embodiment of the invention is not limited thereto, and the crystal layer is not limited thereto. 100a may also fill the entire substrate substrate 100, and details are not described herein. Since the substrate substrate of the array substrate 20 and the color filter substrate 30 both include the crystal layer 100a in which the crystal grains are arranged in a predetermined direction, the crystals of the crystal layer 100a of the substrate substrate 100 in the array substrate 20 and the color filter substrate 30 are appropriately disposed. In the particle array direction, when the array substrate 20 and the color filter substrate 30 form a liquid crystal display device, the function of the current polarizer can be replaced.
  • the crystal layer 100a of the substrate substrate 100 in the array substrate 20 can change the incident light into polarized light, and the light of the liquid crystal display device can be controlled by the action of the liquid crystal layer and the crystal layer 100a of the substrate substrate 100 in the color filter substrate 30. strength.
  • crystal grain arrangement directions may be the same or different.
  • the embodiment of the invention further provides a method for preparing a display substrate. As shown in FIG. 6, the method includes the following steps:
  • the preparation of the substrate substrate 100 includes: the crystal layer 100a is formed on one surface of the substrate substrate 100.
  • the preparing the substrate substrate 100 includes: the crystal layer 100a filling the entire substrate substrate 100.
  • the preparation of the substrate substrate 100 may specifically be: heating the original glass to form a crystal nucleus in the original glass; heating the original glass forming the crystal nucleus to grow the crystal grains; when the crystallization temperature range is reached A grain-oriented microcrystallization treatment is performed to form a crystal layer 100a in which crystal grains are arranged in a predetermined direction in the substrate.
  • the crystal layer 100a can be formed only on the surface of the substrate substrate 100 or the entire substrate substrate 100 by controlling the crystallization temperature, time, and the like, and is set according to actual conditions, which is not limited herein.
  • the grain-oriented microcrystallization treatment may be, for example, directed crystallization by a temperature gradient field to guide the crystal grains to grow in a predetermined direction, and those skilled in the art may prepare a crystal layer according to the materials included in the original glass. And the crystallization temperature range and the like, the precipitated crystal grains can be arranged in a predetermined direction.
  • S20 forming the display element structure 200 on the substrate substrate 100.
  • forming the display element structure 200 on the substrate substrate 100 may include, for example, on the substrate substrate 100.
  • a gate electrode 301, a gate insulating layer 302, an active layer 303, a source electrode 304 and a drain electrode 305, and a protective layer 306 and a pixel electrode 307 are sequentially formed.
  • the drain 305 is connected to the pixel electrode 307 through a via provided on the protective layer 306.
  • the gate 301, the gate insulating layer 302, the active layer 303, the source 304 and the drain 305 constitute a structure of the thin film transistor 300; a thin film transistor 300 and a pixel electrode connected to the drain 305 of the thin film transistor and
  • the protective layer 306 constitutes a display element structure 200.
  • a common electrode 308 (not shown in Fig. 4) and a passivation layer 309 (not shown in Fig. 4) may be included corresponding to the pixel electrode.
  • forming the display element structure 200 on the substrate substrate 100 may include, for example, forming spacers on the substrate substrate 100.
  • a common electrode 308 (not shown in Fig. 5) may be formed over the color film 500.
  • the color matrix substrate 30 of the box with the array substrate 20 is taken as an example, and the black matrix 400 corresponding to the thin film transistor 300 and the red color filter 501, which is in contact with one side thereof, constitute a display element structure;
  • the black matrix 400 corresponding to the thin film transistor 300 and, for example, the green color filter 502 in contact with one side thereof also constitute a display element;
  • the color filter 503 also constitutes a display element.
  • the above display element structure 200 further includes a common electrode 308 corresponding to the black matrix 400 and a corresponding color filter such as the red color filter 501.
  • An embodiment of the present invention provides a method for preparing a display substrate, including preparing a substrate substrate 100, wherein the substrate substrate has a crystal layer 100a in which crystal grains are arranged in a predetermined direction; and the substrate substrate is formed on the substrate substrate.
  • the display element structure 200 since the substrate substrate 100 has the crystal layer 100a in which the crystal grains are arranged, the mechanical strength is higher than that of the ordinary glass, and thus the substrate substrate in the display substrate provided by the present invention Compared with the conventional glass substrate in the prior art, the fragile phenomenon can be avoided; on the other hand, when the display substrate is used for a display device, since the substrate substrate 100 has the crystal layer 100a in which the crystal grains are arranged, the incident light can be made.
  • the vibrating display device can reduce the thickness of the display device and the problems caused by the wear of the polarizer, the poor adhesion, and the occurrence of the mura phenomenon, as compared with the prior art, where the polarizer is additionally provided.
  • Embodiments of the present invention also provide a display device including the above various possible display substrates 10.
  • the display device may be any display device that needs to be polarized to realize display. Specifically, it may be a liquid crystal display device, and may be a product or component having any display function such as a liquid crystal display, a liquid crystal television, a digital photo frame, a mobile phone, a tablet computer or the like.
  • the display substrate 10 may be the array substrate 20 or the color filter substrate 30, or the display substrate is the array substrate 20 and the color filter substrate 30, respectively; the display device further includes The liquid crystal layer 40 between the array substrate 20 and the color filter substrate 30.
  • the display device When only the display substrate 10 is the array substrate 20, the display device further includes a polarizing plate disposed on a side of the color filter substrate 30 away from the liquid crystal layer 40; or, when only the display substrate 10 is present In the case of the color filter substrate 30, the display device further includes a polarizing plate disposed on a side of the array substrate 20 away from the liquid crystal layer 40; or, when the display substrate 10 is the array substrate 20 and In the case of the color filter substrate 30, a polarizer is not required.
  • the display substrate 10 is the array substrate 20 and the color filter substrate 30, respectively, it is further preferable that the substrate substrate 100 located in the array substrate 20 and the substrate located in the color filter substrate 30
  • the polarization directions of the crystal layer 100a of the substrate 100 are perpendicular or parallel to each other.
  • the polarization directions of the crystal substrate 100a of the substrate substrate 100 located in the array substrate 20 and the crystal substrate 100a of the substrate substrate 100 in the color filter substrate 30 are set to be perpendicular or parallel to each other in accordance with the principle of the liquid crystal display device.
  • the crystal layer 100a of the substrate substrate in the array substrate 20 changes the light of the backlight into the first direction, and if the liquid crystal is rotated by 90 degrees, the crystal layer of the substrate of the color filter substrate 30
  • the polarization direction of 100a is perpendicular to the polarization direction of the crystal layer 100a of the substrate substrate in the array substrate 20, the direction of the polarized light after the liquid crystal is rotated and the polarization direction of the crystal layer 100a of the substrate substrate of the color filter substrate 30.
  • the color filter substrate 30 which is a normally white mode; if the direction is parallel to the polarization direction of the crystal layer 100a of the second substrate substrate 102 after the liquid crystal is rotated by 0 degrees, the color film cannot be obtained from the color film.
  • the substrate is ejected, which is the normally black mode.
  • the above-described normally white mode is In the normal black mode, the normal black mode is the normal white mode.
  • the specific process is similar to the above, and is not described here.
  • the polarization directions of the crystal substrate 100a of the substrate substrate 100 located in the array substrate 20 and the substrate substrate 100 located in the color filter substrate 30 may be preferentially set to be perpendicular to each other.
  • the light of the backlight is converted into polarized light through the crystal layer 100a of the substrate of the substrate substrate 20, and the emitted red color can be controlled by the liquid crystal layer 40 and the crystal layer 100a of the substrate of the color filter substrate 30.
  • the intensity of green and blue light enables full color display.
  • the substrate substrate 100 in the array substrate 20 and the crystal layer 100a on the substrate substrate, and the substrate substrate 100 in the color filter substrate 30 and the crystal layer on the substrate substrate are described herein.
  • 100a uses the same reference numerals, but in actual use, the positions of the crystal layers 100a of the substrate substrate in the array substrate and the color filter substrate may be the same or different, and the polarization directions of the crystal layers 100a may be the same or different.
  • the crystal layer 100a in the substrate substrate 100 in the array substrate 20 is located on the side of the array substrate 20 away from the liquid crystal layer 40.
  • the crystal layer 100a in the substrate substrate 100 in the color filter substrate 30 is located on the side of the color filter substrate 30 away from the liquid crystal layer 40.
  • the crystal layer 100a is formed on the surface layer of the substrate substrate 100, and the process energy consumption cost can be saved during the preparation process.
  • the display device includes: an array substrate 10, a color filter substrate 20, and a liquid crystal layer 30 between the substrates.
  • the array substrate 10 includes a first substrate substrate 101, a thin film transistor 300 disposed on the first substrate substrate 101, and a pixel electrode 307.
  • the thin film transistor 300 includes a gate 301 and a gate insulating in order from bottom to top.
  • the layer 302, the active layer 303, the source 304 and the drain 305 are connected to the pixel electrode 307 via via holes provided on the protective layer 306 between the thin film transistor and the pixel electrode.
  • the array substrate further includes a gate line (not shown) connected to the gate 301 and a data line (not shown) connected to the source 304.
  • the crystal layer 100a of the first substrate substrate 101 is disposed on the surface layer of the first substrate substrate away from the liquid crystal layer 40, and the arrangement direction of the crystal grains of the crystal layer 100a enables the light to be along the first direction.
  • Polarization; the specific thickness of the surface layer of the first mother substrate 101 of the crystal layer 100a is not limited herein, and is set according to an actual preparation process.
  • the color filter substrate 20 includes a second substrate substrate 102, a black matrix 400 disposed on the second substrate substrate 102, and a color film 500 (not shown in FIG. 6), and the color film 500 may include A red color filter 501, a green color filter 502, and a blue color filter 503 (not shown in FIG. 6); further, a common electrode 308 may be included.
  • the crystal layer 100a of the second substrate substrate 102 is disposed on the surface layer of the second substrate substrate away from the liquid crystal layer 40, and the arrangement direction of the crystal grains of the crystal layer 100a enables the light to be polarized in the second direction.
  • the second direction is perpendicular to the first direction.
  • the specific thickness of the surface layer of the second substrate substrate 102 of the crystal layer 100a is not limited herein, and is set according to an actual preparation process.
  • the crystal layer 100a of the first substrate substrate 101 in the array substrate 20 changes the light of the backlight into polarized light in the first direction, and if the liquid crystal is rotated by 90 degrees, the direction thereof and the color filter substrate 30
  • the polarization direction of the crystal layer 100a of the second substrate substrate 102 is parallel, and all of them are emitted from the color filter substrate 30, which is a normally white mode; if the liquid crystal is rotated by 0 degrees, the direction thereof and the crystal of the second substrate substrate 102
  • the polarizing directions of the layers 100a are parallel, they are not emitted from the color filter substrate, which is a normally black mode.
  • the light of the backlight is converted into polarized light through the crystal layer 100a of the first substrate substrate 101 in the array substrate 20, and then passes through the liquid crystal layer 40 and the crystal layer 100a of the second substrate substrate 102 of the color filter substrate 30.
  • the intensity of the emitted red, green, and blue light can be controlled to achieve full color display.
  • the display device provided by the embodiment of the present invention can be applied to a liquid crystal display device of an advanced super-dimensional field conversion technology type liquid crystal display device, an internal plane conversion type, or the like.
  • the core technical characteristics of the advanced super-dimensional field conversion technology are described as follows: The electric field generated by the edge of the slit electrode in the same plane and the electric field generated between the slit electrode layer and the plate electrode layer form a multi-dimensional electric field, so that the slit electrode in the liquid crystal cell All of the aligned liquid crystal molecules directly above the electrode can be rotated, thereby improving the liquid crystal working efficiency and increasing the light transmission efficiency.
  • Advanced super-dimensional field conversion technology can improve the picture quality of Thin Film Transistor-Liquid Crystal Display (TFT-LCD) products with high resolution, high transmittance, low power consumption and wide viewing angle. High aperture ratio, low chromatic aberration, and no push mura.
  • TFT-LCD Thin Film Transistor-Liquid Crystal Display
  • the array substrate 20 further includes: a passivation layer 309 and a common electrode 308.
  • a thin film transistor 300 a pixel electrode 307 connected to the drain 305 of the thin film transistor, and a protective layer 306 between the same, a common electrode 308 corresponding to the pixel electrode 307, and a passivation layer 309 therebetween
  • a display element structure 200 A display element structure 200.

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Abstract

提供了一种显示基板（10）及其制备方法、显示装置。该显示基板（10）包括：衬底基板（100）以及位于衬底基板（100）上的显示元件结构（200），其中衬底基板（100）具有晶粒沿预设方向排列的晶体层（100a）。

Description

显示基板及其制备方法、 显示装置 技术领域
本发明的实施例涉及一种显示基板及其制备方法、 显示装置。 背景技术
如图 1所示, TFT-LCD ( Thin Film Transistor-Liquid Crystal Display, 薄 膜场效应晶体管液晶显示器）主要包括阵列基板 20、彩膜基板 30、 以及位于 两基板间的液晶层 40,此外还包括位于阵列基板相对所述液晶层一侧的第一 偏光片 50、 以及位于所述彩膜基板相对所述液晶层一侧的第二偏光片 60。阵 列基板 20包括第一玻璃基板 20a, 所述彩膜基板包括第二玻璃基板 30a。
然而， 考虑到显示区薄型化的时长需求， 第一玻璃基板 20a和第二玻璃 基板 30a均会做的比较薄， 这样就会导致第一玻璃基板 20a和第二玻璃基板 30a比较易碎。
此外， 偏光片在制备过程中碘分子的偏振性能在高温高湿度下易受到破 坏， 容易引发各种 mura (画面品质不良）现象的出现； 在使用过程中也会出 现磨损、 贴附过程易出现泡沫等不良、 且贴附精度不高等问题出现。 发明内容
本发明的一个实施例提供一种显示基板， 包括村底基板以及位于所述村 底基板上的显示元件结构， 其中， 所述村底基板具有晶粒沿预设方向排列的 晶体层。
在一个示例中， 所述晶体层位于所述村底基板的一个表面层。
在一个示例中， 所述晶体层的厚度等于整个所述村底基板的厚度。 在一个示例中， 所述晶体层为铌酸锶钡晶体层。
在一个示例中， 所述村底基板为微晶玻璃基板。
在一个示例中， 所述显示基板为阵列基板， 所述村底基板上的显示元件 结构包括薄膜晶体管和像素电极。
在一个示例中， 所述显示面板为彩膜基板， 所述村底基板上的显示元件 结构包括黑矩阵和彩膜。
在一个示例中， 所述晶体层位于所述村底基板的形成有所述显示元件的 相反侧的表面层。
本发明的另一个实施例提供一种显示基板的制备方法， 包括以下步骤： 制备村底基板，其中，所述村底基板具有晶粒沿预设方向排列的晶体层； 在所述村底基板上形成所述显示元件结构。
在一个示例中， 所述晶体层形成在所述村底基板的一个表面。
在一个示例中， 所述晶体层的厚度等于整个所述村底基板的厚度。
在一个示例中， 所述制备村底基板包括：
加热原始玻璃， 使所述原始玻璃中形成晶核；
对形成晶核的原始玻璃加热， 使晶粒成长；
当达到析晶温度范围时进行晶粒定向微晶化处理， 在所述村底基板中形 成晶粒沿预设方向排列的晶体层。
在一个示例中，在所述晶粒定向 晶化处理中，对所述玻璃施加梯温场， 引导晶粒按照所述预设方向进行生长。
本发明的再一个实施例提供一种显示装置， 包括根据本发明实施例的显 示基板。
在一个示例中， 所述显示装置包括彼此对置的两个所述显示面板， 其中 的一个显示面板为阵列基板， 另一个显示面板为彩膜基板；
所述显示装置还包括设置于所述阵列基板和所述彩膜基板之间的液晶 层。
在一个示例中， 位于所述阵列基板中的村底基板和位于所述彩膜基板中 的村底基板的晶体层具有偏光作用， 且位于所述阵列基板中的村底基板和位 于所述彩膜基板中的村底基板的晶体层的偏光方向互相垂直。
在一个示例中， 所述阵列基板中的村底基板中的晶体层位于所述阵列基 板远离所述液晶层一侧； 所述彩膜基板中的村底基板中的晶体层位于所述彩 膜基板远离所述液晶层一侧。
本发明实施例提供了一种显示基板及其制备方法、 显示装置， 该显示基 板包括村底基板以及位于所述村底基板上的显示元件结构， 其中所述村底基 板具有晶粒沿预定方向排列的晶体层； 这样， 一方面， 由于村底基板具有晶 粒排列有序的晶体层， 相比普通玻璃， 其机械强度更高， 因而本发明提供的 显示基板中的村底基板相比现有技术中的普通玻璃基板， 可避免易碎现象； 另一方面， 当该显示基板用于显示装置时， 由于村底基板具有晶粒排列有序 的晶体层， 可以使入射光变为偏振光， 可应用于对入射光要求为偏振光的显 示设备， 因而相比现有技术中需要额外设置偏光片， 本发明可以降低显示装 置的厚度， 并可避免由于偏光片易磨损、贴附不良引发的问题以及出现 mura 现象。 附图说明
为了更清楚地说明本发明实施例的技术方案， 下面将对实施例的附图作 筒单地介绍，显而易见地，下面描述中的附图仅仅涉及本发明的一些实施例， 而非对本发明的限制。
图 1为现有技术中提供的一种液晶显示装置的结构示意图；
图 2为本发明实施例提供的一种显示基板结构示意图一；
图 3为本发明实施例提供的一种显示基板结构示意图二；
图 4为本发明实施例提供的一种阵列基板的结构示意图；
图 5为本发明实施例提供的一种彩膜基板的结构示意图；
图 6为本发明实施例提供的一种制备显示基板的流程示意图；
图 7为本发明实施例提供的一种显示装置的结构示意图一；
图 8为本发明实施例提供的一种显示装置的结构示意图二。 具体实施方式
为使本发明实施例的目的、 技术方案和优点更加清楚， 下面将结合本发 明实施例的附图，对本发明实施例的技术方案进行清楚、 完整地描述。显然， 所描述的实施例是本发明的一部分实施例， 而不是全部的实施例。 基于所描 述的本发明的实施例， 本领域普通技术人员在无需创造性劳动的前提下所获 得的所有其他实施例， 都属于本发明保护的范围。
本发明实施例提供了一种显示基板 10, 如图 2和图 3所示， 该显示基板 包括： 村底基板 100以及位于所述村底基板上的显示元件结构 200。 所述村 底基板 100具有晶粒沿预定方向排列的晶体层 100a。这里的晶粒沿预定方向 排列是指晶粒的晶体光轴方向沿预定方向排列。
在一个示例中， 晶体结构可以为四方结构， 同时又是单轴晶体； 此时， 晶体光轴方向与晶粒长度方向一致。 然而， 本发明的实施例并不限制于此。
此处的村底基板即为微晶玻璃基板， 其中微晶玻璃是一种特殊的复合材 料， 它是通过将高温熔融、 退火处理后得到的原始玻璃重新加热、 控制析晶 得到的一类晶相与玻璃相共存的多晶固体材料。
需要说明的是， 第一， 显示元件结构 200是指实现显示的必不可少的、 且由各层图案组成的结构， 例如对于液晶显示装置的一个最小的显示单元来 说， 在阵列基板上， 该显示元件结构包括薄膜晶体管、 像素电极等； 在彩膜 基板上， 该显示元件结构包括红色或绿色或蓝色滤色器以及黑矩阵等； 当然 也包括一些必要的图案层例如保护层等或为改善显示效果或某些缺陷增加的 一些图案层。 因此， 在本发明实施例中， 所述显示元件可以理解为， 对应显 示装置的一个最小的显示单元来说， 设置在村底基板的各层上的图案， 且显 示基板 10包括若干个显示元件结构 200。
第二，所述晶体层 100a的厚度可以根据实际制备工艺进行设定，在此不 做限定。
第三，在本发明实施例中， 由于晶粒沿预定方向排列的晶体层 100a可以 ^射的自然光在经过所述晶体层 100a后变为偏振光， 因此，所述预定方向 需根据需要的偏振光的方向以及晶体层 100a的材料而定， 在此不做限定。
例如， 所述的晶体层是结晶形成的晶粒与玻璃相共存的结构。
本发明实施例提供了一种显示基板 10,该显示基板 10包括村底基板 100 以及位于所述村底基板上的显示元件结构 200, 其中所述村底基板 100具有 晶粒沿预定方向排列的晶体层 100a; 这样， 一方面， 由于村底基板 100具有 晶粒排列有序的晶体层 100a, 相比普通玻璃， 其机械强度更高， 因而本发明 提供的显示基板中的村底基板 100相比现有技术中的普通玻璃基板， 可避免 易碎现象； 另一方面， 当该显示基板 10用于显示装置时， 由于村底基板 100 具有晶粒排列有序的晶体层 100a, 可以使入射光变为偏振光（也就是， 其具 有偏光作用） ， 可应用于对入射光要求为偏振光的显示设备， 因而相比现有 技术中需要额外设置偏光片， 本发明可以降低显示装置的厚度， 并可避免由 于偏光片易磨损、 贴附不良引发的问题以及出现 mura现象。 在一个示例中， 如图 2所示， 所述晶体层 100a位于所述村底基板 100 的一个表面层。
一般， 在热处理初期， 基板的两个表面都会同时生长出晶粒沿一定方向 排列的晶体层 100a, 但是在析晶不充分的情况下， 基板的中间部分会有析晶 排挤出的气泡、 不定向析晶物等， 因此， 这里可以将该基板从中间剖为两层， 将中间部分加工掉， 从而形成两块具有晶粒沿一定方向排列的晶体层 100a 的村底基板 100, 可加快生成进度， 节省成本。
所述晶体层 100a位于所述村底基板 100的一个表面层是指，相对所述村 底基板 100的上下表面中的任一个表面， 所述晶体层 100a位于从村底基板 100 的一个表面到其另一表面的之间的一定厚度范围内。 表面层的厚度形成 需根据所述晶体层 100a的热处理过程中析晶温度、时间等而定，在此不做限 定。
此外， 由于晶粒是均匀分布在所述表面层中， 因此从微观上看， 在所述 表面层中， 所述晶粒也是一层层按一定方向排列的。
可选的， 如图 3所示， 所述晶体层 100a的厚度等于整个所述村底基板
100的厚度。
这里的晶体层 100a位于村底基板 100的一个表面到其另一表面之间整个 厚度范围内。 同样， 通过控制热处理过程中析晶温度、 时间等进行充分析晶， 从而使所述晶体层 100a充满整个所述村底基板 100。
此外， 由于晶粒是均匀分布在所述村底基板中， 因此从微观上看， 在所 述整个所述村底基板 100, 所述晶粒也是一层层按一定方向排列的。
这里，由于晶粒沿一定方向排列的晶体层 100a是通过对原始玻璃进行热 处理后形成的， 并且由于原始玻璃基板的表面存在缺陷和低的表面能， 使得 对原始玻璃进行热处理的初期， 晶粒更容易先从玻璃基板的表面析出， 随着 加热过程的进行， 析晶进行的更充分， 从而充满整个玻璃基板。 具体在多少 温度范围以及多长时间可在玻璃基板的表面析出晶粒， 以及继续加热到多少 温度范围以及多长时间使析晶更成分、 充满整个玻璃基板， 与原始玻璃中包 括的能制备得到所述晶体层的物质等有关， 本领域技术人员根据现有的物质 和技术， 能够制备得到上述的村底基板。
由于晶粒比较容易从玻璃基板的表面析出， 其热处理过程相对较短， 也 可以节约工艺能耗成本。
需要说明的是， 此处所述原始玻璃指的是， 在普通玻璃中含有能够制备 得到所述晶体层的物质的玻璃。
考虑到铌酸锶钡晶体具有优良的光电和压电系数， 进一步优选的， 所述 晶体层可以为铌酸锶钡晶体层。
所述铌酸锶钡晶体层可以由原始玻璃经热处理制备得到。 此处原始玻璃 例如可以为在普通玻璃中含有能够制备得到所述铌酸锶钡晶粒的 SrC03、 BaC03、 Nb205、 以及 Si02的混合物的玻璃。
对于此处的原始玻璃， 其制备方法例如可以包括如下工艺步骤：
1)、 按照选取的原料组成， 将一定比例的 SrC03、 BaC03、 Nb205、 以及
Si02, 加入球磨罐中混合；
2)、 按质量比为 1:1.2的比例向球磨罐中加入酒精；
3)、 将球磨罐固定在球磨罐机上， 调节球磨机的转速为 400r/min, 原料 球磨 6h后出料， 磨好的原料置于 100°C烘干；
4)、烘干后放入铂金坩埚，置于空气气氛下的马弗炉，由室温加热至 1550
°C保温 4h熔融处理；
5)、将熔融后的玻璃导入预先加热好的模具中浇铸，置于空气中冷却 25s 后放入 650°C的炉子中退火处理 12h,以消除成型过程中引入的内应力，得到 原始玻璃。
对于所述铣酸锶钡晶体层，其可以由通过上述步骤制备的所述原始玻璃， 进行热处理得到。 其中， 所述热处理过程例如可以包括如下两个阶段：
第一阶段为核化处理阶段， 即： 以固定的升温速度对上述制备的原始玻 璃进行加热， 当温度由室温升高到核化温度后， 保温一段时间， 此时会有大 量晶核形成。
第二阶段为晶粒的生长阶段， 即： 在上述基础上， 继续以固定的升温速 度对原始玻璃进行加热处理， 至温度达到析晶温度范围， 进行晶粒定向微晶 化处理， 得到晶粒定向排列的铌酸锶钡晶体层。
可以通过控制析晶温度、时间等使所述晶体层 100a只形成在所述村底基 板 100的表面层或充满整个所述村底基板 100,具体根据实际情况进行设定， 在此不做限定。 此外， 晶粒定向微晶化处理例如可以为： 通过梯温场定向析晶方式， 引 导晶粒按照预定的方向进行生长， 本领域技术人员， 根据原始玻璃中包括的 制备得到晶体层的物质， 以及析晶温度范围等， 可以使析出的晶粒沿预设方 向排列。 例如， 这里的梯温场例如可以是按照梯度方式升温的过程； 梯度升 温的过程不同， 晶粒的排列方向也不同。 因此， 可以通过升温过程来形成期 然而， 根据本发明实施例对定向化处理的方式不作限制， 也可以使用其他定 向化处理方式。
可选的， 如图 4所示， 当所述显示基板 10为阵列基板 20时， 所述村底 基板 100表面上设置有薄膜晶体管 300和像素电极 307。 当然， 如图 4所示， 所述村底基板 100上还设置有保护层 306, 且像素电极 307通过设置在保护 层 306的过孔与所述薄膜晶体管 300的漏极 305连接。
薄膜晶体管 300包括栅极 301、 栅绝缘层 302、 有源层 303、 源极 304和 漏极 305 ,所述漏极 305通过设置于保护层 306上的过孔与所述像素电极 307 连接。
此处， 一个薄膜晶体管 300和与该薄膜晶体管的漏极 305连接的像素电 极 307以及之间的保护层构成一个显示元件结构 200。
可选的， 如图 5所示， 当所述显示基板 10为彩膜基板 30时， 所述村底 基板 100表面上设置有黑矩阵 400和彩膜 500。所述彩膜包括红色滤色器 501 , 绿色光组 502以及蓝色滤色器 503。 此外， 所述村底基板 100表面也可以设 置有公共电极 308 (图 5中未示出）等。
此处， 为描述的方便， 以与阵列基板 20对盒的彩膜基板 30为例， 与所 述薄膜晶体管 300对应的黑矩阵 400 以及与其一侧接触的例如红色滤色器 501构成一个显示元件结构； 同理，与所述薄膜晶体管 300对应的黑矩阵 400 以及与其一侧接触的例如绿色滤色器 502也构成一个显示元件结构； 与所述 薄膜晶体管 300对应的黑矩阵 400以及与其一侧接触的例如蓝色滤色器 503 也构成一个显示元件结构。
需要说明的是， 图 4和图 5仅绘示出阵列基板 20和彩膜基板 30中的村 底基板的晶体层 100a位于表面层的情况，但发明实施例并不限于此，所述晶 体层 100a也可以充满整个所述村底基板 100, 在此不进行赘述。 由于阵列基板 20和彩膜基板 30的村底基板均包括晶粒沿预设方向排列 的晶体层 100a,通过分别合理设置位于阵列基板 20和彩膜基板 30中村底基 板 100的晶体层 100a的晶粒排列方向， 在所述阵列基板 20和彩膜基板 30 对盒形成液晶显示装置时，可取代目前偏光片的作用。位于阵列基板 20中村 底基板 100的晶体层 100a可使入射光变为偏振光，通过液晶层以及位于彩膜 基板 30中村底基板 100的晶体层 100a的作用便可控制该液晶显示装置的光 的强度。
需要说明的是， 这里虽然阵列基板 20和彩膜基板 30的村底基板的晶体 层均采用 100a进行标识，但是实际上，其晶粒排列方向可以相同也可以不同。
本发明实施例还提供了一种显示基板的制备方法， 如图 6所示， 该方法 包括如下步骤：
S10、 制备村底基板 100, 其中， 所述村底基板 100具有晶粒沿预设方向 排列的晶体层 100a。
可选的，参考图 2所示，所述制备村底基板 100, 包括：所述晶体层 100a 形成在所述村底基板 100的一个表面。
可选的，参考图 3所示，所述制备村底基板 100, 包括：所述晶体层 100a 充满整个所述村底基板 100。
进一步地， 所述制备村底基板 100具体可以为： 加热原始玻璃， 使所述 原始玻璃中形成晶核； 对形成晶核的原始玻璃加热， 使晶粒成长； 当达到析 晶温度范围时进行晶粒定向微晶化处理， 在所述村底基板中形成晶粒沿预设 方向排列的晶体层 100a。
原始玻璃的制备方法可参考方法实施例中制备得到所述铣酸锶钡晶粒的 原始玻璃的制备方法， 在此不再赘述。
可以通过控制析晶温度、时间等使所述晶体层 100a只形成在所述村底基 板 100的表面或充满整个所述村底基板 100, 具体根据实际情况进行设定， 在此不做限定。
此外， 晶粒定向微晶化处理例如可以为： 通过梯温场定向析晶方式， 引 导晶粒按照预定的方向进行生长， 本领域技术人员， 根据原始玻璃中包括的 制备得到晶体层的物质， 以及析晶温度范围等， 可以使析出的晶粒沿预设方 向排列。 S20、 在所述村底基板 100上形成所述显示元件结构 200。
此处， 参考图 4所示， 在所述显示基板 10为阵列基板 20的情况下， 在 所述村底基板 100上形成所述显示元件结构 200例如可以包括： 在所述村底 基板 100上依次形成栅极 301、 栅绝缘层 302、 有源层 303、 源极 304和漏极 305、 以及保护层 306和像素电极 307。 所述漏极 305通过设置于保护层 306 上的过孔与所述像素电极 307连接。 所述栅极 301、 栅绝缘层 302、 有源层 303、 源极 304和漏极 305构成薄膜晶体管 300的结构； 一个薄膜晶体管 300 和与该薄膜晶体管的漏极 305连接的像素电极以及之间的保护层 306构成一 个显示元件结构 200。 此外， 还可以包括与所述像素电极对应的形成公共电 极 308 (图 4中未示出） 以及之间的钝化层 309 (图 4中未示出） 。
参考图 5, 在所述显示基板 10为彩膜基板 30的情况下， 在所述村底基 板 100上形成所述显示元件结构 200例如可以包括： 在所述村底基板 100上 形成间隔设置的黑矩阵 400、 以及彩膜 500,其中彩膜包括位于所述黑矩阵之 间的红色滤色器 501 , 绿色光组 502以及蓝色滤色器 503。此外，还可以在彩 膜 500上方形成公共电极 308 (图 5中未示出） 。
为描述的方便， 以与阵列基板 20对盒的彩膜基板 30为例， 与所述薄膜 晶体管 300对应的黑矩阵 400以及与其一侧接触的例如红色滤色器 501构成 一个显示元件结构； 同理， 与所述薄膜晶体管 300对应的黑矩阵 400以及与 其一侧接触的例如绿色滤色器 502也构成一个显示元件； 与所述薄膜晶体管 300对应的黑矩阵 400以及与其一侧接触的例如蓝色滤色器 503也构成一个 显示元件。 当然在彩膜基板 30包括公共电极 308的情况下，上述显示元件结 构 200还包括与所述黑矩阵 400和相应滤色器例如红色滤色器 501对应的公 共电极 308。
本发明实施例提供了一种显示基板的制备方法， 包括制备村底基板 100, 其中所述村底基板具有晶粒沿预设方向排列的晶体层 100a; 在所述村底基板 上形成所述显示元件结构 200; 这样， 一方面， 由于村底基板 100具有晶粒 排列有序的晶体层 100a, 相比普通玻璃， 其机械强度更高， 因而本发明提供 的显示基板中的村底基板相比现有技术中的普通玻璃基板，可避免易碎现象； 另一方面， 当该显示基板用于显示装置时， 由于村底基板 100具有晶粒排列 有序的晶体层 100a, 可以使入射光变为偏振光， 可应用于对入射光要求为偏 振光的显示设备， 因而相比现有技术中需要额外设置偏光片， 本发明可以降 低显示装置的厚度， 并可避免由于偏光片易磨损、 贴附不良引发的问题以及 出现 mura现象。
本发明实施例还提供了一种显示装置， 该显示装置包括上述各种可能的 显示基板 10。
上述显示装置可以为任何需要偏光以实现显示的显示装置， 具体可以是 液晶显示装置， 可以为液晶显示器、 液晶电视、 数码相框、 手机、 平板电脑 等具有任何显示功能的产品或者部件。
可选的， 所述显示基板 10可以为所述阵列基板 20或彩膜基板 30, 或所 述显示基板分别为所述阵列基板 20和彩膜基板 30; 所述显示装置还包括设 置于所述阵列基板 20和彩膜基板 30之间的液晶层 40。
当只有所述显示基板 10为所述阵列基板 20时， 所述显示装置还包括设 置于所述彩膜基板 30远离所述液晶层 40—侧的偏振片； 或者， 当只有所述 显示基板 10为所述彩膜基板 30时， 所述显示装置还包括设置于所述阵列基 板 20远离所述液晶层 40—侧的偏振片；或者， 当所述显示基板 10分别为所 述阵列基板 20和彩膜基板 30时， 则无需偏光片。
在所述显示基板 10分别为所述阵列基板 20和彩膜基板 30的情况下，进 一步优选的， 位于所述阵列基板 20中的村底基板 100和位于所述彩膜基板 30中的村底基板 100的晶体层 100a的偏光方向互相垂直或平行。
这里位于所述阵列基板 20中的村底基板 100和位于所述彩膜基板 30中 的村底基板 100的晶体层 100a的偏光方向互相垂直或平行是根据液晶显示装 置的原理而设定的。 即， 例如： 阵列基板 20中的村底基板的晶体层 100a将 背光源的光变为第一方向的偏振光， 若经液晶旋转 90度后， 若彩膜基板 30 的村底基板的晶体层 100a的偏光方向与阵列基板 20中的村底基板的晶体层 100a的偏光方向垂直的情况下，经液晶旋转后的偏振光的方向与彩膜基板 30 的村底基板的晶体层 100a的偏光方向平行， 则光全部从彩膜基板 30射出， 此为常白模式； 若经液晶旋转 0度后， 其方向与第二村底基板 102的晶体层 100a的偏光方向平行， 则都不能从彩膜基板射出， 此为常黑模式。
对于彩膜基板 30的村底基板的晶体层 100a的偏光方向与阵列基板 20 中的村底基板的晶体层 100a的偏光方向平行的情况下，上述的常白模式即为 此处的常黑模式， 上述的常黑模式即为此处的常白模式， 具体过程与上述类 似， 在此不再赘述。
在本发明实施例中， 可优先选择将位于所述阵列基板 20 中的村底基板 100和位于所述彩膜基板 30中的村底基板 100的晶体层 100a的偏光方向设 置为互相垂直。
经过阵列基板 20中的村底基板的晶体层 100a将背光源的光变为偏振光， 再经液晶层 40以及彩膜基板 30的村底基板的晶体层 100a的作用，可控制射 出的红、 绿、 蓝光的强度， 从而实现全彩显示。
此处需要说明的是,这里虽然对于阵列基板 20中的村底基板 100以及位 于村底基板的晶体层 100a, 和对于彩膜基板 30中的村底基板 100以及位于 村底基板上的晶体层 100a都使用相同的标号，但是在实际使用过程中， 阵列 基板和彩膜基板中村底基板的晶体层 100a的位置可以相同也可以不同，且其 晶体层 100a的偏光方向可以相同也可以不同。
优选的， 所述阵列基板 20中的村底基板 100中的晶体层 100a位于所述 阵列基板 20远离所述液晶层 40—侧。
所述彩膜基板 30中的村底基板 100中的晶体层 100a位于所述彩膜基板 30远离所述液晶层 40—侧。
这样，所述晶体层 100a形成在所述村底基板 100的表面层，在其制备工 艺过程中可以节省工艺能耗成本。
下面提供一具体的实施例以详细描述上述的一种显示装置，如图 7所示， 该显示装置包括： 阵列基板 10、 彩膜基板 20、 以及位于两基板间的液晶层 30。
所述阵列基板 10包括第一村底基板 101、 设置在所述第一村底基板 101 上的薄膜晶体管 300以及像素电极 307, 所述薄膜晶体管 300从下到上依次 包括栅极 301、 栅绝缘层 302、 有源层 303、 源极 304和漏极 305 , 所述漏极 305通过设置在薄膜晶体管和像素电极之间的保护层 306上的过孔与所述像 素电极 307连接。此外，所述阵列基板还包括与所述栅极 301连接的栅线（图 中未标出） 、 与所述源极 304连接的数据线（图中未标出） 。
所述第一村底基板 101的晶体层 100a设置于所述第一村底基板远离所述 液晶层 40的表面层， 且该晶体层 100a的晶粒的排列方向能使光沿第一方向 偏振；对于该晶体层 100a位于所述第一村底基板 101表面层的具体厚度在此 不做限定， 根据实际制备工艺进行设定。
所述彩膜基板 20包括第二村底基板 102、 设置在所述第二村底基板 102 上的黑矩阵 400、 以及彩膜 500 (图 6中未示出）， 所述彩膜 500可以包括红 色滤色器 501、 绿色滤色器 502、 以及蓝色滤色器 503 (图 6中未示出）； 此 夕卜， 还可以包括公共电极 308。
所述第二村底基板 102的晶体层 100a设置于所述第二村底基板远离所述 液晶层 40的表面层， 且该晶体层 100a的晶粒的排列方向能使光沿第二方向 偏振，该第二方向与上述第一方向垂直；对于该晶体层 100a位于所述第二村 底基板 102表面层的具体厚度在此不做限定， 根据实际制备工艺进行设定。
上述结构的显示装置，阵列基板 20中的第一村底基板 101的晶体层 100a 将背光源的光变为第一方向的偏振光，若经液晶旋转 90度后，其方向与彩膜 基板 30的第二村底基板 102的晶体层 100a的偏光方向平行， 则全部从彩膜 基板 30射出， 此为常白模式； 若经液晶旋转 0度后， 其方向与第二村底基板 102的晶体层 100a的偏光方向平行， 则都不能从彩膜基板射出， 此为常黑模 式。
经过阵列基板 20中的第一村底基板 101的晶体层 100a将背光源的光变 为偏振光,再经液晶层 40以及彩膜基板 30的第二村底基板 102的晶体层 100a 的作用， 可控制射出的红、 绿、 蓝光的强度， 从而实现全彩显示。
本发明实施例提供的显示装置可以适用于高级超维场转换技术型液晶显 示装置、 内平面转换式等类型的液晶显示装置。 高级超维场转换技术其核心 技术特性描述为： 通过同一平面内狭缝电极边缘所产生的电场以及狭缝电极 层与板状电极层间产生的电场形成多维电场， 使液晶盒内狭缝电极间、 电极 正上方所有取向液晶分子都能够产生旋转， 从而提高了液晶工作效率并增大 了透光效率。 高级超维场转换技术可以提高薄膜场效应晶体管液晶显示器 ( Thin Film Transistor- Liquid Crystal Display, 筒称 TFT-LCD )产品的画面品 质， 具有高分辨率、 高透过率、 低功耗、 宽视角、 高开口率、 低色差、 无挤 压水波纹（ push Mura )等优点。
因此， 对于高级超维场转换技术型液晶显示装置， 如图 8所示， 所述阵 列基板 20还包括： 钝化层 309和公共电极 308。 在此情况下， 一个薄膜晶体管 300、 与该薄膜晶体管的漏极 305连接的 像素电极 307和之间的保护层 306、以及与像素电极 307对应的公共电极 308 以及之间的钝化层 309构成一个显示元件结构 200。
以上所述仅是本发明的示范性实施方式， 而非用于限制本发明的保护范 围， 本发明的保护范围由所附的权利要求确定。

Claims

权利要求书
I、一种显示基板， 包括村底基板以及位于所述村底基板上的显示元件结 构， 其中， 所述村底基板具有晶粒沿预设方向排列的晶体层。
2、根据权利要求 1所述的显示基板， 其中， 所述晶体层位于所述村底基 板的一个表面层。
3、根据权利要求 1所述的显示基板， 其中， 所述晶体层的厚度等于整个 所述村底基板的厚度。
4、根据权利要求 1至 3任一项所述的显示基板， 其中， 所述晶体层为铌 酸锶钡晶体层。
5、根据权利要求 1至 4任一项所述的显示基板， 其中， 所述村底基板为 微晶玻璃基板。
6、根据权利要求 1至 5任一项所述的显示基板， 其中， 所述显示基板为 阵列基板， 所述村底基板上的显示元件结构包括薄膜晶体管和像素电极。
7、根据权利要求 1至 5任一项所述的显示基板， 其中， 所述显示面板为 彩膜基板， 所述村底基板上的显示元件结构包括黑矩阵和彩膜。
8、根据权利要求 2所述的显示基板， 其中， 所述晶体层位于所述村底基 板的形成有所述显示元件的相反侧的表面层。
9、 一种显示基板的制备方法， 包括以下步骤：
制备村底基板，其中，所述村底基板具有晶粒沿预设方向排列的晶体层； 在所述村底基板上形成所述显示元件结构。
10、 根据权利要求 9所述的显示基板的制备方法， 其中， 所述晶体层形 成在所述村底基板的一个表面。
II、 根据权利要求 9所述的显示基板的制备方法， 其中， 所述晶体层的 厚度等于整个所述村底基板的厚度。
12、根据权利要求 9至 11任一项所述的显示基板的制备方法， 其中， 所 述制备村底基板包括：
加热原始玻璃， 使所述原始玻璃中形成晶核；
对形成晶核的原始玻璃加热， 使晶粒成长；
当达到析晶温度范围时进行晶粒定向微晶化处理， 在所述村底基板中形 成晶粒沿预设方向排列的晶体层。
13、根据权利要求 12所述的显示基板的制备方法， 其中， 在所述晶粒定 向微晶化处理中， 对所述玻璃施加梯温场， 引导晶粒按照所述预设方向进行 生长。
14、 一种显示装置， 包括如权利要求 1至 5任一项所述的显示基板。
15、根据权利要求 14所述的显示装置， 其中， 所述显示装置包括彼此对 置的两个所述显示面板， 其中的一个显示面板为阵列基板， 另一个显示面板 为彩膜基板；
所述显示装置还包括设置于所述阵列基板和所述彩膜基板之间的液晶 层。
16、根据权利要求 15所述的显示装置， 其中，位于所述阵列基板中的村 底基板和位于所述彩膜基板中的村底基板的晶体层具有偏光作用， 且位于所 述阵列基板中的村底基板和位于所述彩膜基板中的村底基板的晶体层的偏光 方向互相垂直。
17、 根据权利要求 15或 16所述的显示装置， 其中， 所述阵列基板中的 村底基板中的晶体层位于所述阵列基板远离所述液晶层一侧；
所述彩膜基板中的村底基板中的晶体层位于所述彩膜基板远离所述液晶 层一侧。
PCT/CN2013/088136 2013-05-28 2013-11-29 显示基板及其制备方法、显示装置 Ceased WO2014190697A1 (zh)

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