WO2014188882A1 - Dispositif d'application de faisceau de particules chargées - Google Patents

Dispositif d'application de faisceau de particules chargées Download PDF

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Publication number
WO2014188882A1
WO2014188882A1 PCT/JP2014/062404 JP2014062404W WO2014188882A1 WO 2014188882 A1 WO2014188882 A1 WO 2014188882A1 JP 2014062404 W JP2014062404 W JP 2014062404W WO 2014188882 A1 WO2014188882 A1 WO 2014188882A1
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Prior art keywords
charged particle
particle beam
array
lens
application apparatus
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PCT/JP2014/062404
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English (en)
Japanese (ja)
Inventor
百代 圓山
谷本　明佳
慎 榊原
太田　洋也
早田　康成
直正 鈴木
伊藤　博之
Original Assignee
株式会社日立ハイテクノロジーズ
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Publication of WO2014188882A1 publication Critical patent/WO2014188882A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/10—Lenses
    • H01J37/12—Lenses electrostatic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/153—Electron-optical or ion-optical arrangements for the correction of image defects, e.g. stigmators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/15—Means for deflecting or directing discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/153—Correcting image defects, e.g. stigmators
    • H01J2237/1534—Aberrations

Definitions

  • the present invention relates to a charged particle beam application apparatus for performing highly sensitive and highly efficient inspection and measurement.
  • a charged particle beam such as an electron beam or ion beam is irradiated on a sample, and secondary charged particles such as secondary electrons generated (hereinafter referred to as secondary beam).
  • primary beam such as an electron beam or ion beam
  • secondary beam secondary charged particles
  • a charged particle beam length measuring device that acquires the above signal and measures the shape and dimensions of a pattern formed on a sample
  • a charged particle beam inspection device that checks the presence or absence of defects are used.
  • a so-called scanning electron microscope (SEM) that scans a sample with a primary beam focused in a dot shape has been used.
  • SEM is characterized by higher resolution and deeper depth of focus than optical microscopes, and can observe surface shapes from micron to nanometer order on the sample surface.
  • surface analysis such as detecting foreign matter from the contrast of acquired images using the difference in the amount of reflected electrons generated according to the type of substance, or identifying the material of the foreign matter by analyzing the generated X-rays.
  • SEM is widely used for research and inspection analysis.
  • Factors that determine the resolution of SEM include diffraction aberration, spherical aberration, chromatic aberration, and light source diameter. Of these, the diameter of the light source can be made sufficiently small by using a high-intensity electron source such as an FE (Field Emission) electron source.
  • the diffraction aberration is a physical quantity determined by the wavelength and the opening angle, it is difficult to avoid.
  • an electron lens cannot be a concave lens in principle as long as it is formed of a general rotationally symmetric magnetic pole or electrode, unlike an optical lens, correction of spherical aberration and chromatic aberration is not easy. For this reason, the resolution of the SEM has been improved by studying the shape and combination of the magnetic lens and the electrostatic lens so as to obtain a minimum beam diameter by balancing the above three aberrations.
  • Patent Document 2 an electron beam emitted from a single electron gun is divided into a plurality of beams and individually focused by small lenses arranged in an array to form a plurality of beams.
  • Patent Document 3 discloses a technique for dividing a beam into beamlets and focusing them on a common imaging point.
  • JP 2011-40256 A Japanese Patent No. 4878501 Special table 2009-543116
  • the inventors paid attention to a multipole aberration corrector capable of correcting chromatic aberration, which is particularly problematic in high-resolution observation, and further studied. As a result, it has been found that in this configuration, four stages of 12-pole lenses, that is, a total of 48 ultra-high stable power sources (power fluctuations of 10 ⁇ 12 or less) will be required. It was feared that meeting this requirement was technically and costly difficult.
  • the aberration correction technique is an indispensable technique for achieving high resolution, but the multipole type aberration corrector has a problem that a large number of highly stable power supplies are required.
  • An object of the present invention is to provide a charged particle beam application apparatus capable of correcting chromatic aberration and spherical aberration and performing high-resolution observation and inspection without using an ultra-high stable power source.
  • a charged particle beam application apparatus for irradiating a sample with a charged particle beam, Comprising at least one deflector array in which a plurality of deflectors are arranged in a region including the optical axis of the charged particle beam;
  • the deflector array has a function of a concave lens with respect to the charged particle beam.
  • a charged particle beam application apparatus for irradiating a charged particle beam on a sample, Comprising at least one deflector array in which a plurality of deflectors are arranged in a region including the optical axis of the charged particle beam;
  • the deflector array has a function of deflecting the charged particle beam in a direction away from the optical axis.
  • the present invention it is possible to provide a charged particle beam application apparatus capable of correcting chromatic aberration and spherical aberration and performing high-resolution observation and inspection without using an ultra-high stable power source.
  • FIG. 1 is a schematic overall configuration diagram for explaining an electron beam application apparatus according to a first embodiment. It is the schematic which shows an example of the beam adjustment screen in the input / output device of the electron beam application apparatus which concerns on a 1st Example. It is a flowchart of the electron beam adjustment for aberration correction in the electronic application apparatus according to the first embodiment. It is a schematic whole block diagram for demonstrating the electron beam application apparatus which concerns on a 2nd Example. It is a schematic sectional drawing which shows the structure of the aberration corrector in the electron beam application apparatus which concerns on a 3rd Example.
  • FIG. 5E is a plan view of an aperture array arranged in a fine grid
  • FIG. 5E is a perspective view of a lens array in which electrode plates on which the aperture array is formed are stacked.
  • FIG. 7E is a plan view of the deflector array corresponding to FIG. 7A, but the deflecting electrode is rotated by 45 degrees with respect to the opening, and FIG.
  • the top view which expanded one, (g) is sectional drawing in the AA 'line of (f).
  • the multi-beam type apparatus has the advantage of being able to individually control a plurality of divided beams, and the beam farther from the optical axis is deflected outward from the optical axis. It was thought that the function of the concave lens can be realized by controlling in this way.
  • each beam is canceled so as to cancel the deviation of the arrival position on the sample caused by the aberration.
  • Aberration correction is realized by individually controlling.
  • a deflector array or the like for deflecting a plurality of beams can be manufactured by a known MEMS technique.
  • FIG. 1 is a cross-sectional view for explaining the aberration correction method and the configuration of the aberration corrector in the electron beam application apparatus according to the present embodiment.
  • FIG. 1A shows an optical path diagram without aberration correction.
  • the electron optical system is composed of only the macro lens 102.
  • the electron source is located upstream (the direction in which the electron beam flows; the direction in which the electron source is installed),
  • various optical systems such as a lens for focusing an electron beam generated from an electron source are included.
  • the effect of the present invention is not lost even when another lens is present downstream of the macro lens 102 (the direction in which the electron beam flows; the direction in which the sample is arranged).
  • the electron beam 101 is described as a set of equally spaced rays in order to facilitate understanding of the effect of aberration.
  • the electron beam 101 is focused by the macro lens 102 and reaches the surface of the sample 103 while focusing. At this time, if aberration is received, the light beam passing outside the macro lens 102 in the electron beam 101 is bent more strongly. As a result, when the electron beam 101 reaches the sample 103, it originally reaches a different position where it should be focused on one point on the optical axis 104.
  • FIG. 1B differs from FIG. 1A only in that an aperture array 105 for splitting the electron beam is provided.
  • the aperture array 105 has a plurality of apertures arranged on a plate. A portion with an aperture allows an electron beam to pass therethrough, and a portion without an aperture blocks the electron beam. Therefore, after passing through the aperture array 105, the electron beam 101 is divided into a plurality of electron beam groups. When attention is paid to the electron beam 106 in the electron beam group, it can be seen that the arrival point of the electron beam 106 on the sample passes through the optical axis 104 due to aberration and is further away from the optical axis 104 by the distance D.
  • a deflector array 107 which is a group of deflectors for controlling each divided electron beam, is arranged downstream from the aperture array, and the divided electron beams reach the sample 103.
  • Aberration can be corrected by controlling to deflect away from the optical axis 104 in order to correct the positional deviation.
  • the deflector array 107 functions as a concave lens with respect to the electron beam 101 in that the electron beam diverges outward, and the combination of the aperture array 105 and the deflector array 107 is an aberration corrector 108.
  • the deflection amount to be given to each of the divided electron beams by the deflector array 107 that is, the deviation of the arrival position without aberration correction, depends on the distance from the optical axis, and increases as the distance increases. Control.
  • the aberration corrector 108 is a combination of the aperture array 105, the deflector array 107, and the lens array 109.
  • the position of the focusing point of the electron beam 106 moves upward by a distance F from the sample surface. That is, the focusing intensity of the macro lens 102 varies depending on each divided electron beam.
  • a lens group 109 which is a lens group for controlling each divided electron beam, is arranged downstream from the aperture array, and each divided electron beam is focused. If the control is performed so that the positions coincide with each other, the correction amount of the aberration is further increased.
  • the amount of focusing to be given to each divided electron beam by the lens array 109 depends on the distance from the optical axis, and becomes weaker as the distance increases.
  • the lens array 109 is used as an auxiliary lens for the macro lens 102 to focus on the sample 103, and does not form an image of the lens array alone. That is, when two A and B having different distances from the optical axis 104 are selected from the plurality of divided electron beams, the focal length fa of the lens array 109 with respect to the electron beam A is the focal point of the lens array 109 with respect to the electron beam B. It becomes a value different from the distance fb, and further satisfies the relationship of fa> L and fb> L with respect to the distance L between the lens array 109 and the macro lens 102.
  • 1D shows an example in which the lens array 109 is arranged upstream of the deflector array 107, the same effect can be obtained even when the lens array 109 is arranged downstream of the deflector array 107.
  • FIG. 1E shows an example in which a quadrupole array 110 is further added to the aberration corrector 108 in order to further enhance the effect of the aberration corrector 108. Since each of the divided electron beams has different astigmatism depending on the off-axis, the quadrupole array 110 may be controlled as an astigmatism corrector for each beam so as to cancel each.
  • FIG. 1E shows the case where the quadrupole array 110 is disposed upstream of the lens array 109, the lens array 109 and the deflector array 107 have the same effect regardless of the order. . In the present embodiment, the lens array 109 and the deflector array 107 are described as different optical elements, but the effect as an aberration corrector is lost even when one optical element serves as two or more elements. I will not.
  • the inclination angle of the electron beam 106 from the optical axis is ⁇
  • the opening angle of the electron beam 106 is ⁇ .
  • ⁇ and ⁇ are also expressed as complex numbers.
  • the spherical aberration coefficient in the image plane definition of the macro lens 102 is Cs
  • the spherical aberration of the electron beam 106 can be expressed by the following formula 1.
  • the first term of the expression (1) corresponds to the distortion aberration of the electron beam 106 that does not depend on the opening angle ⁇ , that is, the positional deviation D. As described above, the positional deviation D is eliminated by deflecting the electron beam 106 by the deflector array 107.
  • the second term is a first-order complex conjugate term for ⁇ , that is, astigmatism. This can be solved by the quadrupole array 110.
  • the third term is a first-order term for ⁇ , it is field curvature. Since the third term itself indicates a displacement of the position on the sample surface, 2 ⁇ * divided by the opening angle ⁇ is the distance to focusing. That is, this corresponds to the moving amount F of the focusing position (see FIG. 1B). The deviation of the focusing position can be eliminated by the lens array 109.
  • the fourth and fifth terms are coma aberration and the sixth term is spherical aberration. These items cannot be solved because the opening angle ⁇ is effective when the square is greater than or equal to square. However, since the electron beam 106 is obtained by dividing the electron beam 101, the opening angle is negligibly small as compared with the electron beam 101, and the fourth to sixth terms do not need to be corrected.
  • spherical aberration can be corrected by arranging the aberration corrector 108 shown in FIG.
  • chromatic aberration can also be corrected by an aberration corrector that combines a deflector array, a lens array, and a quadrupole array.
  • FIG. 2 is a schematic configuration of the electron beam application apparatus according to the present embodiment.
  • the device configuration will be described with reference to FIG.
  • a macro lens 202 In the downstream direction in which the electron beam 101 is extracted from the electron source 201, a macro lens 202, an aberration corrector 108, a scanning deflector 203, a macro lens 102, and the like are arranged.
  • the electron optical system further includes a current limiting diaphragm, an aligner for adjusting the central axis (optical axis 104) of the primary beam, an astigmatism corrector, and the like (not shown).
  • a sample 103 is disposed under the macro lens 102. At this time, the sample 103 is arranged via a sample mounting stage, a sample holder (both not shown), or the like according to circumstances.
  • An electron optical system controller 204 is connected to various electro optical elements, and the electron optical system controller 204 is controlled by the system controller 205.
  • the system control unit 205 is functionally provided with a storage device 206 and an arithmetic device 207, and is connected with an input / output device 208 having an image display device, a keyboard for inputting signals, and the like.
  • an input / output device 208 having an image display device, a keyboard for inputting signals, and the like.
  • the system control unit 205 includes a central processing unit that is the arithmetic device 207 and a storage unit that is the storage device 206, and the arithmetic device 207 executes a program stored in the storage device 206 to perform scanning. It is possible to perform control of the electron optical system controller 204 and the like that perform signal control on the deflector 203 and control of the electron optical system and the like. Further, in the input / output device 208, an input unit such as a keyboard and a mouse and a display unit such as a liquid crystal display device may be separately configured as an input unit and an output unit, or an integrated type using a touch panel or the like. It may be composed of input / output means.
  • the aberration corrector 108 is configured to be irradiated with a parallel electron beam. However, as with a normal electron optical system, the aberration corrector 108 may be controlled so as to have a converging or diverging trajectory. The effect as the aberration corrector is not lost.
  • FIG. 4 is a flowchart for performing electron beam adjustment so that aberrations are corrected.
  • the operator starts beam adjustment via the input / output device 208 equipped with an image display device (step S400 in FIG. 4).
  • the beam adjustment screen shown in FIG. 3 appears on the image display device.
  • the operator selects a desired file from the file selection button 300.
  • preset data stored in the storage device 206 for controlling the electron optical system of the electron beam application apparatus is read out, and the macro lens 102 and the like are read via the system control unit 205 and the electron optical system control device 204.
  • a control signal corresponding to the preset data is input to all the electro-optical elements such as the aberration corrector 108 (step S401 in FIG. 4).
  • This preset data may be determined in advance according to the theoretical value, or may be a value determined in the previous adjustment. Alternatively, a state where all the aberration correctors 108 are turned off may be called.
  • the operator selects an electron beam to irradiate the sample from a plurality of electron beams obtained by dividing the electron beam 101 by the aperture array 105 by selecting a number from the irradiation beam selection box 301 (step S402 in FIG. 4). .
  • an SEM image formed by irradiating the sample with the electron beam selected in step 402 is displayed. If the aberration is not corrected in a state where a plurality of beams are selected, the SEM screen 302 is observed with a blur or a position shift.
  • the operator selects an electron beam to be adjusted from the irradiated electron beam by using the adjustment beam selection box 303 in accordance with the position of the image blur or pattern on the SEM screen 302 (step S403 in FIG. 4). It is desirable to adjust the electron beam in order from the beam closer to the center.
  • a parameter set for adjusting the selected electron beam is displayed in the adjustment box 304.
  • L corresponds to a lens array
  • DEF corresponds to a deflector array
  • S corresponds to an astigmatism correction array.
  • the electron beam C is selected as the electron beam to be adjusted
  • the parameters of the adjustment box 304 are four corresponding to the electron beam C from the lens array, deflector array, and astigmatism correction array, respectively.
  • the example is displayed one by one.
  • the operator adjusts each parameter of the adjustment box 304 so that the blurring of the image on the SEM screen 302 and the pattern misalignment disappear (step S404 in FIG. 4).
  • the operator also uses the common optical element adjustment box 305 to perform optical adjustment on the macro lens common to all electron beams, such as the macro lens 102, and other common optical elements (in FIG. 4).
  • Step S405) Steps S404 and S405 in FIG. 4 are repeatedly performed so that the amount of blur of the image displayed on the SEM screen 302 falls within the allowable range (step S406 in FIG. 4).
  • Each optical condition adjusted by pressing 306 is stored in the storage device 206, and the electron beam adjustment is completed (step S407 in FIG. 4).
  • step S402 in this adjustment an electron beam to be irradiated on the sample is selected.
  • the beam selective diaphragm can be realized by changing the opening position of a general movable diaphragm. Automatic selection is possible by moving the movable part of the movable diaphragm on the motor control or on the stage.
  • the electrical selection by blanking may be realized by adding a dedicated deflector array or superimposing a blanking signal on the deflector array.
  • the beam adjustment screen shown in FIG. 3 is not limited to this example and can be variously modified.
  • the aberration corrector shown in FIG. 1 (e) is mounted on the electron beam application apparatus shown in FIG. 2, and the electron beam is adjusted according to the flowchart shown in FIG. Good images could be obtained and the dimensions could be measured with high accuracy. Thereby, cost reduction can be achieved without using an ultrastable power source.
  • a charged particle beam application apparatus according to a second embodiment of the present invention will be described with reference to FIG. Note that the matters described in the first embodiment but not described in the present embodiment can be applied to the present embodiment as long as there is no particular circumstance.
  • Example 1 the simplest configuration of the electron optical system including the aberration corrector 108 is shown.
  • the aberration corrector 108 in this embodiment is the same as that shown in Embodiment 1, that is, the aperture array 105, the deflector array 107, the lens array 109, and the quadrupole array 110 shown in FIG. It is shown in combination.
  • FIG. 5 is a schematic overall configuration diagram of the electron beam application apparatus according to the present embodiment.
  • a macro lens 202, an aberration corrector 108, and a macro lens 102 are arranged in the downstream direction in which the electron beam 101 is extracted from the electron source 201, and further, a scanning deflector is arranged further downstream.
  • 501 and a macro lens 502 are provided.
  • the aberration corrector 108 includes a combination of the aperture array 105, the deflector array 107, and the like.
  • secondary electrons 210 are generated by the interaction between the electrons and the sample. This is detected by the detector 209, and an SEM image of the sample 103 is acquired by forming an image according to the position where the electron beam 101 scans the sample 103 by the scanning deflector 501.
  • the configuration of FIG. 5 differs greatly from the configuration of FIG. 2 in the first embodiment in that a scanning deflector 501 and a macro lens 502 are disposed downstream of the aberration corrector 108 and the macro lens 102 disposed immediately below the aberration corrector 108. It is a point.
  • the aberration corrector 108 in this embodiment divides the electron beam 101 into a plurality of electron beams by an aperture array, and each beam acts on each of the array elements (deflector array 107, lens array 109, four elements). Through the pole array 110).
  • the scanning deflector 501 is arranged upstream of the aberration corrector 108, the electron beam is scanned on the array-shaped element, and each beam passes through the opening of the array-shaped element. Becomes difficult.
  • the scanning deflector 501 is disposed downstream of the aberration corrector 108. Further, in order to simplify the adjustment, no other electro-optical element is disposed between the aberration corrector 108 and the macro lens 102.
  • the scanning deflector 501 is disposed downstream of the macro lens 102.
  • a scanning deflector is disposed between the sample and the lens immediately above the sample in order to shorten the working distance from the sample to the lens immediately above the sample, that is, the objective lens. Is practically difficult. Therefore, in this embodiment, another macro lens is disposed downstream of the macro lens 102 (macro lens 502). With this configuration, the macro lens 502 can be used as an objective lens, and the working distance from the macro lens 502 to the sample 103 can be made sufficiently short.
  • the macro lens 502 downstream of the combination of the aberration corrector 108 and the macro lens 102, various elements other than the scanning deflector 501 are disposed between the macro lens 102 and the macro lens 502. it can.
  • the detector 209 is disposed.
  • an EXB deflector for assisting detection of secondary electrons, a reflector, or the like may be arranged.
  • the macro lens 502 serving as the objective lens is disposed downstream of the aberration corrector 108 and the macro lens 102, and the scanning deflector 501 and other electro-optical elements are added. It was set as the practical electron beam application apparatus structure.
  • a current limiting diaphragm, a primary beam center axis (optical axis) adjustment aligner, an astigmatism corrector, and the like are added to the electron optical system ( Not shown).
  • the sample 103 is arranged via a sample mounting stage, a sample holder (none of which are shown), or the like according to circumstances.
  • An electron optical system controller 204 is connected to various electro optical elements, and the electron optical system controller 204 is controlled by the system controller 205.
  • the system control unit 205 is functionally provided with a storage device 206 and an arithmetic device 207, and is connected with an input / output device 208 having an image display device, a keyboard for inputting signals, and the like.
  • an input / output device 208 having an image display device, a keyboard for inputting signals, and the like.
  • the system control unit 205 includes a central processing unit that is the arithmetic device 207 and a storage unit that is the storage device 206, and the arithmetic device 207 executes a program stored in the storage device 206 to perform scanning. It is possible to perform control of the electron optical system controller 204 and the like that perform signal control on the deflector 203 and control of the electron optical system and the like. Further, in the input / output device 208, an input unit such as a keyboard and a mouse and a display unit such as a liquid crystal display device may be separately configured as an input unit and an output unit, or an integrated type using a touch panel or the like. It may be composed of input / output means.
  • the aberration corrector 108 is configured to be irradiated with a parallel electron beam. However, as in a normal electron optical system, the aberration corrector 108 is controlled so as to have a converging or diverging trajectory. However, the effect of the present invention is not lost.
  • the method for adjusting the electron beam so that the aberration is corrected is the same as in the first embodiment.
  • a third embodiment of the present invention will be described with reference to FIG.
  • a specific configuration of the aberration corrector 108 for correcting chromatic aberration will be described. Note that portions other than the details of the aberration corrector 108, such as the configuration of the electron optical system and the method of adjusting the electron beam, are the same as those in the first or second embodiment, and thus the description thereof is omitted.
  • FIG. 6 shows a specific configuration of the aberration corrector 108 for correcting the aberration.
  • the electron beam 101 enters the aberration corrector 108, enters the macro lens 102 with the aberration corrected, and reaches the sample 103.
  • the chromatic aberration to be corrected increases as the distance from the optical axis 104 increases.
  • the aberration corrector 108 includes an aperture array 105, a lens array 601, a deflector array 602, a deflector array 603, and a lens array 604.
  • the electron beam 101 is divided into a plurality of beam groups by the aperture array 105. Of the electron beam group, attention is focused on the electron beam 605.
  • the electron beam 605 forms an image at the position of the deflector array 602 by the action of the lens array 601.
  • the deflector array 602 deflects the electron beam 605 in a direction away from the optical axis 104 and acts as a concave lens.
  • the deflector array 603 deflects the electron beam 605 in the direction of turning back.
  • the electron beam 605 after passing through the deflector array 603 takes a trajectory that shifts away from the optical axis 104, and the electron beam trajectory. Can avoid big changes.
  • Reference numerals 606a to 606c indicate the trajectories of the centers of the electron beam with low energy (606a), the electron beam with average energy (606b), and the electron beam with high energy (606c). The lower the energy, the higher the sensitivity of the deflector arrays 602 and 603 and the stronger the deflection in the direction away from the optical axis 104.
  • the beam of any energy is shifted in the direction away from the optical axis 104, and the central trajectory of each energy is indicated by 606a to 606c. As you can see, they are parallel.
  • the lens array 604 it is possible to control to refocus the dispersion trajectories of the electron beam trajectories 606a to 606c having different energies, and chromatic aberration correction can be realized. Note that spherical aberration can also be corrected in this configuration.
  • a fourth embodiment of the present invention will be described. Since the elements constituting the aberration corrector in the present embodiment have minute openings, minute electrodes, wirings, and the like, they are created using the MEMS technology. In this embodiment, specific configurations of the aperture array, the deflector array, the lens array, and the quadrupole array constituting the aberration corrector shown in Embodiments 1 to 3 will be described with reference to FIGS. To do.
  • FIG. 7 is a diagram showing a schematic configuration of an aperture array and a lens array.
  • the electron beam is divided into a plurality of electron beams by the aperture array in order to perform aberration correction.
  • FIGS. 1 and 6 an example in which the beam is divided into five electron beams arranged in one dimension has been described.
  • a two-dimensional aperture array is formed. Examples of this opening are shown in FIGS. 7 (a) to 7 (d).
  • FIG. 7A shows an example in which the openings 702 are formed in a 5 ⁇ 5 square array on the electrode plate 701.
  • FIG. 7B shows an example in which the opening 702 is located at the center, that is, at the same distance from the optical axis.
  • FIG. 7C shows an example in which the aperture is not circular but the electron beam is split concentrically.
  • FIG. 7D shows an example in which the openings are arranged in a hexagonal close-packed lattice shape. In either case, the electron beam collides with the electrode plate 701, passes only the electron beam that has reached the opening 702, and the other electron beams are blocked to be divided into a plurality of electron beams.
  • the electrode plate 701 is made of metal and used as a ground potential so as not to be affected by charging due to the collision of the electron beam.
  • FIG. 7E shows an example in which a lens array is formed by laminating three electrode plates that form an aperture array.
  • the electrode plate 703a and the electrode plate 703c act as an Einzel lens for each divided electron beam passing through the opening 702 by applying a lens voltage from the lens voltage source 704 to the ground potential and the electrode plate 703b.
  • the number of electrodes to which a voltage is applied is one (703b), but a plurality of electrode plates may be provided between two ground electrodes (703a, 703c).
  • the lens voltage applied by the lens voltage source 704 is a negative voltage, it may be a positive voltage.
  • FIG. 8 is a diagram for explaining the deflector array.
  • FIGS. 8A to 8D correspond to FIGS. 7A to 7D, respectively.
  • the position of the opening 802 of the deflector array is the position of the opening 702 of the opening array shown in FIGS. 7A to 7D. And correspondingly arranged.
  • the opening 802 provided in the electrode plate 801 there is a deflection electrode 803 for deflecting an electron beam passing through the opening 802.
  • symbol 802 was typically attached
  • the shape disposed opposite to the deflection electrode 803 and the two shapes rotated 90 degrees with respect to the same opening are also deflection electrodes. The same applies to the ones arranged around other openings.
  • a voltage for deflecting the electron beam is applied to the deflection electrode 803.
  • the electrode plate 801 guides the applied voltage up to the deflection electrode 803 as described in FIG. 8F. Wiring is formed. Since the deflection electrode 803 is used as a deflector, it is desirable that the deflection electrode 803 be formed in a pair with the counter electrode.
  • the counter electrode may not be used and the light may be deflected with one pole.
  • electrostatic deflection using a deflection electrode has been described.
  • a deflection coil is used instead of the deflection electrode, magnetic field deflection can be performed.
  • FIG. 8 (a) a deflection electrode facing two orthogonal directions is provided. Thereby, the direction of deflection can be freely controlled.
  • the deflection direction of the deflector array is a direction away from the optical axis or a direction approaching the optical axis. Therefore, there is a case where it is not necessary to provide a degree of freedom in the deflection direction.
  • FIG. 8B shows an example.
  • the deflection electrode 803 in FIG. 8B is arranged in a direction opposite to the center of the pattern, that is, a straight line extending radially from the optical axis. Thereby, it has the structure which deflects in the direction away from an optical axis, or the direction approaching an optical axis. Compared with the configuration of FIG.
  • a deflecting electrode may be provided in a direction rotated 90 degrees with respect to the same opening, and may be used as an auxiliary.
  • FIG. 8C shows an example in which circumferential electrodes are arranged using the same deflection strength when the off-axis distance from the optical axis is the same.
  • the lens array cannot be arranged, but since the area of the opening is large, there are advantages that the interrupted current can be reduced and that the number of power supplies for control may be small.
  • FIGS. 8A and 8D four deflection electrodes are provided for one opening. Therefore, it can also be used as a quadrupole, for example for astigmatism correction.
  • a quadrupole when used as a quadrupole, there is no degree of freedom in the astigmatism direction.
  • FIG. 8E if FIG. 8E in which the deflection electrode is rotated by 45 degrees with respect to the opening is also used, the degree of freedom in the astigmatic direction can be increased. Or it is good also considering rotation with respect to opening of four electrodes as a required direction previously.
  • FIG. 8F is an enlarged view of one of the deflector arrays. Here, it has shown about what has four electrodes for deflection
  • the deflection electrode 803 is connected to a wiring 804, and the wiring 804 is routed on an electrode plate 801 or a wiring substrate so as to be connected to a control power supply (not shown).
  • FIG. 8G is a cross-sectional view taken along the broken line AA ′ shown in FIG.
  • the deflection electrode 803 is formed along the wall surface of the opening 802 opened in the electrode plate 801, and acts as a deflector when a control signal is applied thereto.
  • this invention is not limited to the above-mentioned Example, Various modifications are included.
  • the above-described embodiments have been described in detail for easy understanding of the present invention, and are not necessarily limited to those having all the configurations described.
  • a part of the configuration of a certain embodiment can be replaced with the configuration of another embodiment, and the configuration of another embodiment can be added to the configuration of a certain embodiment.
  • the present invention is useful as a charged particle beam application device, particularly as a high resolution observation / measurement and inspection technique using a charged particle beam.
  • lens array 605 ... divided electron beam, 606a ... center trajectory of low energy beam, 606b: Center trajectory of the central energy beam, 606c: Center trajectory of the high energy beam, 701 ... Electrode plate, 702 ... Opening, 703a ... Electrode plate, 703b ... Electrode plate, 703c ... Electrode plate, 704 ... Lens voltage source 801 ... Electrode plate, 802 ... Opening, 803 ... Deflection electrode, 04 ... wiring.

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electron Beam Exposure (AREA)

Abstract

L'invention a pour objectif de fournir un dispositif d'application de faisceau de particules chargées ne mettant pas en œuvre d'alimentation électrique à stabilité extrêmement haute, corrigeant les aberrations chromatiques et les aberrations de sphéricité, et permettant une observation et une surveillance haute résolution. Plus précisément, le dispositif d'application de faisceau de particules chargées de l'invention irradie un échantillon (103) à l'aide d'un faisceau de particules chargées (101), et est équipé d'au moins une matrice de déflecteurs (107) dans laquelle une pluralité de déflecteurs est disposée dans une région incluant un axe lumineux (104) appartenant au faisceau de particules chargées (101). La matrice de déflecteurs (107) possède une fonction de lentille concave face au faisceau de particules chargées (101).
PCT/JP2014/062404 2013-05-22 2014-05-08 Dispositif d'application de faisceau de particules chargées WO2014188882A1 (fr)

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