WO2014180282A1 - Toit ouvrant pour véhicule solaire et son procédé de fabrication - Google Patents

Toit ouvrant pour véhicule solaire et son procédé de fabrication Download PDF

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Publication number
WO2014180282A1
WO2014180282A1 PCT/CN2014/076728 CN2014076728W WO2014180282A1 WO 2014180282 A1 WO2014180282 A1 WO 2014180282A1 CN 2014076728 W CN2014076728 W CN 2014076728W WO 2014180282 A1 WO2014180282 A1 WO 2014180282A1
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Prior art keywords
glass
sunroof
solar
thin film
electrode
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PCT/CN2014/076728
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English (en)
Chinese (zh)
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杨立友
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上海硕拉投资管理合伙企业（有限合伙）
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Publication of WO2014180282A1 publication Critical patent/WO2014180282A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03926—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate comprising a flexible substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03921—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including only elements of Group IV of the Periodic System
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/048—Encapsulation of modules
    • H01L31/0488—Double glass encapsulation, e.g. photovoltaic cells arranged between front and rear glass sheets
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Definitions

  • Solar energy is an inexhaustible new clean energy source. Compared with other new energy sources such as wind energy and nuclear energy, solar energy is suitable for large-scale grid-connected power generation because of the ubiquity of sunlight! It is also very suitable for distributed, small-scale applications.
  • the earliest small-scale applications of solar photovoltaic power generation can be traced back to solar panels on satellites.
  • solar panels are often placed on the roof of a building or installed on a variety of vehicles to supplement the daily energy consumption.
  • the solar panels used in automobiles are the most common, and the related technologies that are emerging one after another are disclosed by patents, and the typical ones are as follows: US Patent No. US2.0060073044, which is fixed on the window of a car.
  • the solar panel drives the fan in the vehicle to work, which can reduce the temperature inside the vehicle.
  • the US Patent No. US20120132245 proposes to bond a plurality of solar cells having a flexible substrate to the window glass to eliminate The weight that the car bears when placing solar panels on the roof.
  • the technology disclosed in the above patents utilizes a conventional crystalline silicon cell structure to insulate and divide the battery on the glass or the flexible polymer lining V3 ⁇ 4, the process is complicated, and the degree of integration with the automobile body is not high, which affects the overall automobile.
  • Beautiful. Thicker glass substrates, polymer substrates, and crystalline silicon have poor light transmission properties, and when combined with automotive windows, the brightness of the interior of the vehicle is reduced.
  • Thin-film solar cells have many advantages such as beautiful appearance, high degree of automation, flexibility, and transparency.
  • Thin film solar energy The combination of the battery and the sunroof of the car makes the process simpler, and also integrates the solar module with the car, improving the overall aesthetics.
  • As a thin film solar panel that can be used for a sunroof of a vehicle on the one hand, it is required to have good light transmittance to ensure the illumination brightness of the compartment, and on the other hand, it is required to have good bending performance, so as to be curved with the curved structure of the automobile sunroof glass. Closely fit.
  • the substrate of the thin film solar cell must be both transparent and bendable.
  • the substrate of the thin film solar panel can be selected according to specific requirements of any one of glass, polymer, ceramic and graphite, wherein the glass is a transparent substrate and has good light transmittance, and can be used for manufacturing transparent thin film solar cells, but existing
  • the thickness of the glass substrate selected by the thin film solar cell technology is generally greater than 3 mm, and has no bendability; and the polymer is a flexible substrate, which is easy to bend and fold, and is generally used for manufacturing flexible thin film solar panels, but polymers.
  • the substrate does not have both light transmission and high temperature resistance, that is, it cannot withstand 200. Above the process temperature of C, it is difficult to deposit a battery film thereon.
  • the existing thin film solar panel manufacturing equipment and processes are mostly built on a flat substrate, such as flat float glass, which makes the direct fabrication of thin film solar cells with a certain curvature. Difficulties. If a thin film solar panel is to be processed by performing a uniform coating on a curved substrate, it is necessary to make major changes to the coating equipment and process, which not only greatly increases the cost, but also has different bending structure faces. The shape and curvature of the arc, resulting in the adaptation of the design and process to the skylight glass of different bending amplitudes also have four limitations.
  • an object of the present invention is to provide a solar vehicle sunroof, wherein the substrate of the thin film solar panel included in the solar vehicle sunroof has high flexibility and light transmittance, so that The solar vehicle sunroof has good light transmission and is easy to be processed, and has a uniform structure with uniform hooks.
  • the sunroof comprises a sunroof glass and a thin film solar panel, the thin film solar panel comprising a substrate, a first electrode on the substrate, a photoelectric conversion layer on the first electrode, and the photoelectric conversion layer a second electrode and a gate electrode, the substrate is an ultra-thin glass substrate, the ultra-thin glass substrate has a thickness of 0.11 mm, and the ultra-thin glass substrate has flexibility, and the minimum bending radius thereof is Up to 10 cm or less, the first electrode is continuously disposed on the substrate during formation.
  • the solar photovoltaic sunroof disclosed by the present invention has the beneficial effects that: the ultra-thin glass substrate having a thickness of 0,11 mm has an effect of increasing light transmittance, thereby improving light transmittance of the thin film solar panel, thereby The solar cell sunroof has good light transmittance; the transmittance of the photoelectric conversion layer is also increased by increasing the light transmittance of the substrate, and the efficiency of the thin film solar cell is higher than that of the existing thin film solar energy.
  • the battery is 1-2% higher; the ultra-thin glass substrate has better bendability, and can be conveniently used for fabricating solar vehicle sunroofs of various bending widths; the first electrode is continuously disposed on the substrate, Compared with the conventional method of dividing a plurality of battery blocks by using an insulating material on a substrate, the process is simple, and when applied to a solar vehicle sunroof, it can be closely combined with the curved sunroof glass to form a uniform and continuous integrated structure, which is more beautiful. Compared with the polymer substrate, the ultra-thin glass substrate also has the advantages of high temperature resistance and good environmental corrosion resistance.
  • the ultra-thin glass substrate has a bending radius of more than 30 cm, and the ultra-thin glass substrate has a thickness of 0.35 imm.
  • the beneficial effect is that, in the case that the required bending radius can be achieved, Thicker ultra-thin glass should be used as the substrate to increase the strength of the thin film solar panel.
  • the first electrode is a fully transparent film
  • the second electrode is a non-transparent film.
  • the first and second transparent electrodes have the same light transmittance and are all transparent films.
  • the materials of the first and second electrodes are transparent conductive oxides, and the transparent conductive oxide comprises one of zinc oxide, tin oxide, indium tin oxide and graphene.
  • the photoelectric conversion layer comprises one or more of amorphous silicon, microcrystalline silicon, polycrystalline silicon and single crystal silicon thin film, and the amorphous silicon, polycrystalline silicon or single crystal silicon thin film is formed to comprise a p-n or A single junction structure of a pin junction, or a multi-junction structure containing multiple p-n or p-i-n junctions.
  • the photoelectric conversion layer comprises one or more of a cadmium telluride film, a copper indium gallium tin film, and an organic semiconductor film.
  • the substrate has a bending radius greater than 1 m.
  • the skylight glass has a lower surface facing the inside of the vehicle and an upper surface facing the outside of the vehicle
  • the thin film solar panel is disposed on an upper surface of the skylight glass
  • the photoelectric conversion layer includes a P-type layer And an N-type layer, the P-type layer being disposed adjacent to the first electrode.
  • the sunroof glass has a lower surface facing the inside of the vehicle and an upper surface facing the outside of the vehicle
  • the thin film solar panel is disposed on a lower surface of the sunroof glass
  • the photoelectric conversion layer includes a P-type layer, N a type layer, the N-type layer being disposed adjacent to the first electrode.
  • the beneficial effect is that, since the mobility of electrons in the amorphous silicon film is greater than the mobility of the holes, in the photoelectric conversion layer including the p-I-N junction, the P-type layer is disposed on the side receiving the sunlight.
  • the electrons generated in the P-type layer will be collected by the electrodes at a greater distance across the I-layer, and the holes can be directly collected by the electrodes adjacent to the P-type layer, thereby increasing the collection rate of holes, thereby improving The photoelectric conversion efficiency of the battery.
  • the ultra-thin glass substrate has a thickness greater than 00,005 mm for increasing the mechanical strength of the thin film solar panel.
  • the ultra-thin glass substrate is a chemically tempered glass for The mechanical strength of the thin film solar panel is increased.
  • the gate electrode is connected to a vehicle power supply system and a load thereof through a wire, and the negative
  • the load includes at least one of a fan, a light, and an electronic entertainment system within the passenger compartment.
  • the sunroof glass is a rigid glass having a certain bending amplitude.
  • the sunroof glass is a rigid glass, a position of the thin film solar panel and the sunroof.
  • the sunroof glass is a rigid glass having no bending amplitude
  • the thin film solar battery panel is installed at a position corresponding to the sunroof glass.
  • the thin film solar panel has the same bending amplitude as the sunroof glass.
  • the invention also provides a method for manufacturing a solar vehicle sunroof, comprising the following steps:
  • the first electrode, the photoelectric conversion layer and the second electrode are respectively scribed by a laser to divide the thin film battery into a plurality of d, and connected in series and in parallel;
  • the thin film solar panel in the solar vehicle sunroof provided by the invention is continuous in the formation process of each layer of the film, but is cut into smaller battery cells by laser reticle in step S3 after the coating is completed. Therefore, the manufacturing process is simpler, the preparation efficiency is improved, and the film is too
  • the solar panel fits snugly into the curved skylight glass, providing an integrated structure for a more aesthetic appearance.
  • the solar cell sunroof provided by the invention provides a solar cell panel with a flexible ultra-thin glass substrate and a skylight glass directly combined by a bending process to form a solid solar panel with a certain curvature, The ultra-thin glass substrate is still in a flat form during the coating process, and the process conditions do not need to be changed.
  • the manufacturing method of the solar vehicle sunroof provided by the present invention is suitable for manufacturing solar vehicle sunroof of various bending widths.
  • the thin film solar panel is bonded to the skylight glass using a lamination process.
  • the thin film solar panel is bonded to the sunroof glass using a bonding process.
  • the first electrode is a fully transparent film
  • the second electrode is a non-translucent film.
  • the first and second electrodes have the same light transmittance and are all transparent films.
  • the materials of the first and second electrodes are transparent conductive oxides
  • the transparent conductive oxides include zinc oxide, tin oxide, indium tin oxide and graphite.
  • the process temperature for preparing the first and second electrodes is less than 600. C, to avoid deformation of the ultra-thin glass substrate.
  • the first and second electrodes are prepared by an LPCVD or APCVD method.
  • the photoelectric conversion layer comprises one or more of amorphous silicon, microcrystalline silicon, polycrystalline silicon and single crystal silicon thin film, and the amorphous silicon, microcrystalline silicon, polycrystalline silicon or single crystal silicon thin film is formed to comprise one A single junction structure of a pn junction or a pin junction, or a multijunction structure comprising a plurality of p-n junctions and p-i ⁇ junctions.
  • the process temperature for preparing the photoelectric conversion layer is lower than 600 ° C to avoid deformation of the ultra-thin glass substrate.
  • the photoelectric conversion layer is prepared by a PECVD method.
  • the photoelectric conversion layer comprises one or more of a cadmium telluride film, a copper indium gallium tin film, and an organic semiconductor film.
  • the sunroof glass has a lower surface facing the inside of the vehicle and an upper surface facing the outside of the vehicle.
  • the thin film solar cell panel is disposed on an upper surface of the skylight glass, and the photoelectric conversion layer includes a P-type layer and an N-type layer, and the P-type layer is disposed adjacent to the first electrode.
  • the ultra-thin glass substrate has a thickness greater than 0.5 mm for increasing the mechanical strength of the thin film solar panel.
  • the ultra-thin glass substrate is a chemically tempered glass for increasing the mechanical strength of the thin film solar panel.
  • the sunroof glass has a lower surface facing the inside of the vehicle and an upper surface facing the outside of the vehicle
  • the thin film solar panel is disposed on a lower surface of the skylight glass
  • the photoelectric conversion layer includes a P-type layer And an N-type layer disposed adjacent to the first electrode.
  • the laminating process is carried out in an autoclave, which is a curved vacuum lamination process.
  • the material of the lamination process is EVA, PVB or ionomer resin.
  • the bonding process uses a Vertak adhesive produced by DuPont.
  • the gate electrode is connected to the vehicle power supply system and a load thereof through a wire, and the load includes at least one of a fan, an illumination lamp and an electronic entertainment system in the vehicle compartment.
  • Figure 1 is a schematic view showing the structure of a preferred embodiment of a thin film solar panel included in a solar vehicle sunroof disclosed in the present invention.
  • Fig. 2 is a graph showing the relationship between the light absorptivity and the wavelength of light of an ultrathin glass substrate of different thicknesses.
  • Figure 3 is a graph showing the relationship between the bending stress and the bending radius of two thin ultra-thin glass substrates.
  • Fig. 4 is a graph showing the relationship between the bending stress and the bending radius of an ultrathin glass substrate of various thicknesses.
  • Figure 5 is a schematic view showing the structure of a preferred embodiment of the solar vehicle sunroof disclosed in the present invention.
  • FIG. 6 is a flow chart of a method for manufacturing a solar vehicle sunroof disclosed in the following. Concrete real way
  • a solar vehicle sunroof comprising a skylight glass and a thin film solar panel
  • the thin film solar panel comprising a substrate, a first electrode on the substrate, and a photovoltaic on the first electrode a conversion layer, a second electrode and a gate electrode on the photoelectric conversion layer
  • the substrate being an ultra-thin glass substrate, the ultra-thin glass substrate having a thickness of 0.1 to 1 mm, the ultra-thin glass substrate
  • the first electrode is continuously disposed on the substrate during the formation process.
  • the thin film solar cell panel includes a substrate 10, a first electrode 20 on the substrate, a photoelectric conversion layer 30 on the first electrode, and a second electrode on the photoelectric conversion layer 30. 40, further comprising a gate electrode 50 on the second electrode.
  • the substrate 10 is an ultra-thin glass substrate having a thickness of 0,11 mm, and the ultra-thin glass substrate has flexibility, and the minimum bending radius is up to 10 cm or less.
  • the first electrode 20 is continuously disposed on the substrate 10 during formation thereof.
  • the photoelectric conversion layer 30 includes an amorphous silicon p-type layer 31, an amorphous silicon intrinsic layer 32, and an amorphous silicon n-type layer 33, a first electrode 20 and a second electrode. 4 () are made of zinc oxide material.
  • the substrate 10 is selected from a variety of ultra-thin glass products from Coming Incorporated, such as Lotus Glass, Willow Glass, and Gorilla Glass.
  • Figure 2 shows the relationship between the light transmittance of an ultra-thin glass and the wavelength of light.
  • the light transmittances of three ultra-thin glasses with thicknesses of 0.05 mm, 0.1 ram and 0.2 mm are the same as the wavelength of light, and the transmittance is in the wavelength range of 200 nm to 350 nm.
  • the increase of the wavelength of the wave is large and rapidly increases rapidly and increases; when the wavelength of the light wave is longer than the visible light band of 335500 nnmm, the increase of the transmittance rate increases greatly.
  • the thickness of the ultra-thin thin glass glass is thicker for a specific wave wavelength.
  • a general selection of glass glass with a thickness of 33..22mmmm is used as a lining. Bottom bottom, as can be known from the above conclusions, the transmittance rate of the short-wavelength long-light light is much smaller than that of the ultra-thin thin glass glass.
  • the light transmissive property of the thin film film battery cell is relatively poor. .
  • the selection of the ultra-thin thin glass glass as the lining substrate has the effect of increasing the transmission rate of the added light.
  • the thinner glass fiber glass is selected as the backing substrate, and the absorption rate of the photo-electrical electro-conversion conversion layer on the short-wavelength band light is also The higher the height, the higher the efficiency efficiency of the thin film film solar cell can be increased by 11-22%. .
  • Figure 33 shows the relationship between the bending stress and the bending radius of the ultra-thin thin glass glass with two thicknesses and thicknesses.
  • the ultra-thin thin glass glass with a thickness of 00, 22 mmmm has a corresponding bending stress corresponding to any bending radius of the radius.
  • the average is larger than the ultra-thin thin glass glass with a thickness of 00..11mmmm. . Therefore, the thicker thickness of the glass glass is smaller and smaller, and the corresponding stress should be smaller and smaller as the corresponding radius of the same radius bends. The more it is easier and easier to do the bending and bending work, the more it is not easy to easily break and crack. .
  • the bending stress should be close to 00, and only when the radius of the bend is less than IICCkkmm, when it is close to 55eemm, the bending stress should be It is markedly rising. .
  • the minimum and minimum bending radius will be defined as the threshold value of the glass glass in a certain fixed processing bar condition.
  • the semi-radius diameter of the bending moment should be the stress, and the smaller the minimum half-radius diameter, the better the cocoa bendability of the glass frit. .
  • the ultra-thin thin glass glazing material of the above-mentioned 00, 11 mmmm has the most optimal bending and bending property performance, and the minimum and small bending radius of the radius can reach up to 1100 ccmm. Below. .
  • the ultra-thin thin glass glass to make the substrate bottom 1100 is that it is convenient to use a thin film film of a flat plane surface.
  • the solar solar energy battery pool plate processing and processing is formed into a curved curved electric battery pool plate having a certain arc curvature, and the ultra-thin thin glass having a small thickness and a small thickness is formed.
  • the glass glass cocoa has good bending and bending properties, and thus it can be made into a solar solar cell panel with a semi-radius diameter of dd and ⁇ . .
  • the ultra-thin thin glass glass with a specific thickness and thickness is selected according to the specific body thickness, and the curvature rate of the curved and curved electric battery cell assembly component determined by the final end is selected, The greater the curvature rate, the smaller the curvature should be selected.
  • the thinner the thickness of the ultra-thin glass selected the smaller the strength, and it is easy to break under pressure or rain. At the same time, it is easy to break and reduce the life during the manufacturing process.
  • Thicker glass is used as the substrate to enhance the strength of the substrate 10.
  • ⁇ is the maximum surface bending tensile stress, which is the thickness of the ultra-thin glass, ? is the bending radius, and E is the Young's modulus of the glass.
  • Figure 4 shows the relationship between the bending stress and the bending radius of ultrathin glass of various thicknesses. Referring to Fig. 4, the ultra-thin glass having a thickness of 1 mm or less has excellent bendability. When the bending radius is 30 cm, the maximum surface bending tensile stress of the ultra-thin glass having a thickness of (), 5 mm is about 60 MPa, and the ultra-thin glass having a thickness of 0, 3 mm is about 30 MPa.
  • the Young's modulus of the glass is 90GPa, and the maximum surface bending stress is 52. 5MPa.
  • the intrinsic strength of the glass is about 200 MPa, in practical applications, the maximum surface bending tensile stress of the ultra-thin glass is required to be around 50 MPa to prevent breakage due to surface defects. Therefore, ultra-thin glass with a thickness of 0,35 mm can meet this requirement.
  • the ultra-thin glass substrate has a bending radius greater than 30 em, and thus the ultra-thin glass substrate has a thickness of 0.35 - imm.
  • the thickness of the ultra-thin glass substrate is greater than 0.5 mm, or the ultra-thin glass substrate is subjected to: chemical tempering
  • the orangutan glass produced by Corning can be used.
  • the substrate 10 has a bending radius greater than lm.
  • an ultra-thin glass of 1 mm may be selected as the substrate 10.
  • the ultra-thin glass substrate also has a high temperature resistance and good environmental corrosion resistance with respect to the polymer substrate.
  • the first electrode 20 is continuously disposed on the substrate 10. Compared with the conventional method of dividing a plurality of battery blocks with an insulating material on the substrate, the process is simple, and when applied to a curved component, the curved structure can be Closely integrated into one, more beautiful.
  • the first electrode 20 and the second electrode 40 have the same light transmittance and are all transparent films.
  • the fully permeable film allows more sunlight to pass through the sunroof or building glass, helping to increase the brightness of the interior or interior of the car.
  • the first electrode 20 over the substrate 10 is a fully transparent film and the second electrode 40 over the photoelectric conversion layer is a non-transparent film.
  • the use of the non-transparent film as the second electrode 40 helps to reflect the light transmitted through the photoelectric conversion layer back into the photoelectric conversion layer, thereby improving the light absorptivity and further improving the cell efficiency.
  • the materials of the first electrode 20 and the second electrode 40 are both transparent conductive oxides.
  • the first electrode 20 and the second electrode 40 are both zinc oxide films.
  • the first and second electrodes further include one of zinc oxide, tin oxide or graphene.
  • the photoelectric conversion layer 3 () includes one or more of amorphous silicon, microcrystalline silicon, polycrystalline silicon, and single crystal silicon thin film, and the amorphous silicon, microcrystalline silicon, polycrystalline silicon, or single crystal silicon thin film is formed to include one p- A single junction structure of n or p-i-n junctions, or a multi-junction structure comprising a plurality of p-n or p i-n junctions.
  • the photoelectric conversion layer comprises one or more of a cadmium telluride film, a copper indium gallium tin film, and an organic semiconductor film.
  • FIG. 5 is a schematic diagram of a preferred embodiment of a solar vehicle sunroof disclosed in the present invention.
  • the solar vehicle sunroof includes: the thin film solar panel and the skylight glass 300.
  • the thin film solar panel includes an ultra-thin glass substrate 100 and a thin film battery pack 200 on the ultra-thin glass substrate, the thin film module 200 is composed of the first electrode, the photoelectric conversion layer, and The second electrode is constructed.
  • the photoelectric conversion layer includes a P-type layer 31 and an N-type layer 33. In some preferred embodiments of the present invention, the photoelectric conversion layer further includes a layer between the P-type layer 31 and the N-type layer 33. Type I layer 32.
  • the automobile sunroof glass 300 has a lower surface 320 facing the interior of the vehicle and an upper surface facing the outside of the vehicle.
  • the thin film solar panel may be attached to the upper surface 310 of the automotive sunroof glass 300 or may be attached to the lower surface 320 of the sunroof glass 300.
  • the P-type layer 31 is disposed adjacent to the first electrode 20.
  • the N-type layer 33 is disposed adjacent to the first electrode 20. This causes the P-type layer 31 to always face the direction of the sunlight.
  • the mobility of electrons in the amorphous silicon film is greater than the mobility of the holes, the lifetime of the electrons is also greater than the lifetime of the holes, and the electrons generated in the P-type layer 31 pass through the layer by drift and diffusion to be collected by the electrodes;
  • the 11-type layer 33 receives light to generate carriers, the holes generated in the n-type layer 33 are easily lost when passing through the I layer due to the small mobility and lifetime. Therefore, the P-type layer 31 is always oriented toward the direction of sunlight to improve the collection rate of carriers, thereby improving the light energy conversion efficiency of the solar panel.
  • the sugar electrode (not shown) is connected to the vehicle power supply system and a load thereof via a wire, and the load includes at least a fan, an illumination lamp, and an electronic entertainment system in the vehicle compartment.
  • the load includes at least a fan, an illumination lamp, and an electronic entertainment system in the vehicle compartment.
  • the sunroof glass 300 is a rigid glass having a certain bending amplitude, and the thin film solar panel has the same bending amplitude as the sunroof glass.
  • the sunroof glass is a rigid glass
  • the thin film solar panel is different from the curvature of the sunroof glass
  • the thin film solar panel is installed in the skylight glass. Corresponding location.
  • the sunroof glass is a rigid glass having no bending amplitude
  • the thin film solar panel is mounted at a position corresponding to the sunroof glass.
  • the present invention also provides a method for manufacturing a solar vehicle sunroof.
  • the manufacturing method includes the following steps.
  • the first electrode, the photoelectric conversion layer and the second electrode are respectively scribed by a laser to divide the thin film battery into a plurality of smaller battery cells and connected in series and in parallel;
  • the thin film solar panel in the solar vehicle sunroof provided by the present invention is continuous in the formation process of each layer of the film, but is cut into smaller battery cells by laser reticle in step S3 after the coating is completed.
  • the manufacturing process is simpler, the preparation efficiency is improved, and the thin film solar panel is closely adhered to the curved skylight glass, and has an integrated structure, and the appearance is more beautiful.
  • the solar cell sunroof provided by the invention provides a solar cell panel with a flexible ultra-thin glass substrate and a skylight glass directly combined by bending treatment to form a solid solar panel with a certain curvature, due to the coating process.
  • the ultra-thin glass substrate is still in a flat form, and the process conditions do not need to be changed. This avoids the problems and extra costs that are usually encountered in the manufacture of curved plates, greatly increasing the equipment and The general applicability of the preparation process to skylight glass of various bending amplitudes. Therefore, the manufacturing method of the solar vehicle sunroof provided by the present invention is suitable for manufacturing solar vehicle sunroofs of various bending widths.
  • the thin film solar panel is combined with the skylight glass by a lamination process for encapsulating the thin film solar panel to isolate it from the surrounding environment and form a stable operation.
  • the lamination process is carried out in an autoclave or by lamination using a curved vacuum lamination process.
  • the material of the lamination process is EVA, PVB or away Sub-key resin.
  • the thin film solar panel is bonded to the sunroof glass using a bonding process to form a solar car sunroof that is stable for operation.
  • the bonding process uses a Vertak adhesive produced by DuPont.
  • the first electrode and the second electrode have the same light transmittance and are all transparent films. This improves the light transmission of the thin film solar panel.
  • the first electrode is a fully transparent film
  • the second electrode is a non-transparent film. The opaque film reflects the light transmitted through the photoelectric conversion layer, thereby improving the light absorption rate and efficiency of the battery.
  • the materials of the first electrode and the second electrode are both transparent conductive oxides, and the transparent conductive oxide is one of zinc oxide, tin oxide, indium tin oxide and graphite.
  • the photoelectric conversion layer includes one or more of amorphous silicon, microcrystalline silicon, polycrystalline silicon, and single crystal silicon thin film.
  • the photoelectric conversion layer is made of amorphous silicon 11 A p-i- n type structure composed of a doped layer, an intrinsic layer and a p-type doped layer.
  • the photoelectric conversion layer comprises a p- n or p-i- n junction single junction structure formed of amorphous silicon, microcrystalline silicon, polycrystalline silicon or a single crystal silicon thin film, or a plurality of p- n junctions and p-i- Multi-junction structure of n-junction.
  • the photoelectric conversion layer includes one or more of a cadmium telluride film, a copper indium gallium tin film, and an organic semiconductor film.
  • the process temperature of the process for preparing the first, second electrode or the photoelectric conversion layer is close to a glass strain point, the ultra-thin glass is easily deformed, so that the process temperature should be kept away from the glass as much as possible.
  • Strain point The strain point of ultra-thin glass varies from 650 to 700 °C, and the strain points of other ultra-thin glass also vary within a similar range. Therefore, the process temperature of the process is lower than 600 ° C to prevent deformation of the ultra-thin glass substrate during deposition.
  • the process temperature of the LPCVD method for preparing a transparent oxide film is 180-210 ° C
  • the process temperature of the MOCVD method can be as low as 500 ° C
  • the process temperature of the APCVD method is about 450 ° C, which is used for preparation.
  • the temperature of the PECVD process of the silicon-based photoelectric conversion layer film is generally Below 300 ° C, the above process methods meet the process temperature of less than 600. C requirements. Therefore, the first and second electrodes are prepared by a LPCVD, MOCVD or APCVD process, and the photoelectric conversion layer is prepared by a PECVD process.

Abstract

L'invention concerne un toit ouvrant pour véhicule solaire et son procédé de fabrication. Le toit ouvrant pour véhicule solaire comprend un verre (300) de toit ouvrant et un panneau (200) de cellules solaires à couche mince. Le panneau (200) de cellules solaires à couche mince comprend un substrat (10), une première électrode (20) agencée sur le substrat, une couche de conversion photovoltaïque (30) agencée sur la première électrode (20), une seconde électrode (40) agencée sur la couche de conversion photovoltaïque (30), et une électrode de grille (50). Le substrat (10) est un substrat de verre ultramince. L'épaisseur du substrat de verre ultramince est comprise entre 0,1 et 1 mm. Le substrat de verre ultramince est flexible. Le rayon de flexion minimal du substrat de verre ultramince est inférieur ou égal à 10 cm. La première électrode (20) est agencée en continu sur le substrat (10) pendant un processus de formation. Le toit ouvrant pour véhicule solaire selon l'invention présente une grande transmittance de lumière et peut être traité et fabriqué avec une facilité accrue. Le procédé de fabrication du toit ouvrant présente une applicabilité générale et peut être utilisé avec un degré de praticité accru dans la fabrication du toit ouvrant pour véhicule solaire ayant diverses amplitudes de flexion.
PCT/CN2014/076728 2013-05-07 2014-05-04 Toit ouvrant pour véhicule solaire et son procédé de fabrication WO2014180282A1 (fr)

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