WO2014172989A1 - 掩膜板及其制造方法 - Google Patents

掩膜板及其制造方法 Download PDF

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Publication number
WO2014172989A1
WO2014172989A1 PCT/CN2013/077955 CN2013077955W WO2014172989A1 WO 2014172989 A1 WO2014172989 A1 WO 2014172989A1 CN 2013077955 W CN2013077955 W CN 2013077955W WO 2014172989 A1 WO2014172989 A1 WO 2014172989A1
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WIPO (PCT)
Prior art keywords
layer
mask
controllable
substrate
controllable color
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Ceased
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PCT/CN2013/077955
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English (en)
French (fr)
Inventor
侯学成
徐少颖
郭建
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Beijing BOE Optoelectronics Technology Co Ltd
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Beijing BOE Optoelectronics Technology Co Ltd
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Publication of WO2014172989A1 publication Critical patent/WO2014172989A1/zh
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/15—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on an electrochromic effect
    • G02F1/153—Constructional details
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/15—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on an electrochromic effect
    • G02F1/163—Operation of electrochromic cells, e.g. electrodeposition cells; Circuit arrangements therefor
    • G02F2001/1635—Operation of electrochromic cells, e.g. electrodeposition cells; Circuit arrangements therefor the pixel comprises active switching elements, e.g. TFT

Definitions

  • the present disclosure relates to a mask and a method of fabricating the same. Background technique
  • the liquid crystal panel is the main component of the liquid crystal display.
  • the liquid crystal panel includes a pair of box-shaped array substrates and a color filter substrate, and a liquid crystal filled between the array substrate and the color filter substrate.
  • the liquid crystal panel is coated with a sealant to prevent the liquid crystal inside the liquid crystal panel from leaking out.
  • the specific steps of the box include: applying a sealant on the matrix substrate or the color film substrate to form a surrounding space to prevent the instillation of the liquid crystal from flowing freely; filling the liquid crystal in the area surrounded by the sealant;
  • the array substrate and the color film substrate are paired. In order to prevent the sealant from spreading out to contaminate the liquid crystal and cause product quality problems, the sealant is required to be cured.
  • the existing frame sealant curing is usually cured by ultraviolet light (UV Ultra Violet), but UV has a destructive effect on the liquid crystal. Therefore, it is necessary to make a mask when irradiating and curing the sealant with UV, and Place it on the LCD panel.
  • the mask includes a substrate, and a pattern of a metal layer formed on a portion of the substrate corresponding to the display area of the liquid crystal panel to block UV rays, thereby preventing UV from damaging the liquid crystal. There is no metal layer on the substrate corresponding to the sealant, so the UV light can be irradiated on the sealant through the region to achieve the purpose of curing the sealant.
  • Embodiments of the present disclosure provide a mask and a manufacturing method thereof, which use a mask to cure a frame of a liquid crystal panel of different sizes, thereby saving the manufacturing cost of the panel.
  • a mask comprising a plurality of controllable color changing units arranged in an array, the controllable color changing unit for adjusting the transmittance of light according to a control signal.
  • the mask further includes a substrate, the controllable color changing unit is disposed on the substrate, and the controllable color changing unit comprises a bottom electrode, an ion storage layer, and an electric layer sequentially formed on the substrate.
  • the mask further includes a plurality of thin film transistors disposed on the substrate for generating the control signal according to an external signal; and a bottom layer of each of the controllable color changing units Electrodes are electrically connected to drains of each of the thin film transistors, respectively.
  • the mask further includes a passivation layer formed on the thin film transistor and the plurality of color changeable units; the material of the passivation layer is a transparent insulating material.
  • the thin film transistor includes a gate electrode, a gate insulating layer, an active layer, and a source/drain sequentially formed on the substrate.
  • the material of the gate is a transparent conductive material.
  • the material of the gate insulating layer is a transparent insulating material.
  • the materials of the underlying electrode and the top electrode are transparent conductive materials.
  • the method further includes: providing a substrate; the forming the plurality of controllable color changing units arranged in the array comprises: step S1, forming a a transparent metal film layer, forming a gate of the thin film transistor and a bottom electrode of the controllable color changing unit by a patterning process; Step S2, sequentially forming a first insulating film layer and a semiconductor film layer on the structure of the step S1, forming a patterning process a gate insulating layer and an active layer of the thin film transistor; Step S3, forming a source/drain metal film layer on the structure of the step S2, forming a source and a drain of the thin film transistor by a patterning process; Step S4, completing step S3 Forming an ion storage membrane layer, an electrolyte membrane layer, an electrochromic membrane layer and a second transparent metal membrane layer in sequence, forming an ion storage layer, an electrolyte layer, an electrochromic layer and a
  • the mask provided by the embodiment of the present disclosure includes a plurality of controllable color changing units arranged in an array, because the controllable color changing unit adjusts its transmittance to light according to the control signal, so the mask in the display area of the corresponding display panel On the film panel, by inputting a certain control signal to the controllable color changing unit, the controllable color changing unit is opaque to block the light, thereby preventing the light from damaging the liquid crystal; in the area corresponding to the sealant on the mask board, The control signal is input to the controllable color changing unit, so that the controllable color changing unit is in a light transmitting state, and the light can be irradiated on the sealing frame glue through the area to achieve the purpose of curing the sealing frame glue.
  • FIG. 1 is a schematic structural diagram of a mask according to an embodiment of the present disclosure
  • Figure 2 is a partial enlarged structural view of the mask shown in Figure 1 including a complete controllable color changing unit;
  • FIG. 3 is a flow chart of a manufacturing method of a mask provided by an embodiment of the present disclosure
  • FIG. 4 to FIG. 8 are structures formed by each step of another manufacturing method of the mask provided by the embodiment of the present disclosure.
  • the embodiment of the present disclosure provides a mask.
  • the mask 1 includes a plurality of controllable color changing units 11 arranged in an array, and the controllable color changing unit 11 is configured to adjust the light to the light according to the control signal. Transmittance.
  • the mask 1 provided by the embodiment of the present disclosure includes a plurality of controllable color changing units 11 arranged in an array. Because the controllable color changing unit 11 adjusts its transmittance to light according to the control signal, the controllable color changing unit is input to the controllable color changing unit 11 by inputting a certain control signal on the mask corresponding to the display area of the display panel. 11 is opaque to block light, thereby preventing light from damaging the liquid crystal; in the area corresponding to the sealant on the mask, by inputting a control signal to the controllable color changing unit 11, the controllable color changing unit 11 is in a light transmitting state. The light can be irradiated on the sealant through the area to achieve the purpose of curing the sealant. Therefore, the controllable change of the range of the transparent region and the range of the opaque region on the same mask can be realized, and a mask can be used to cure the frame of different sizes of the display panel, thereby saving manufacturing. cost.
  • the mask of the present embodiment is not limited to use in the manufacturing process of the display panel, and can be applied to other fields requiring a mask.
  • the mask 1 described in the above embodiment may include a substrate 21 and a controllable color changing unit 11 disposed on the substrate 21.
  • the controllable color changing unit 11 can utilize the principle of electrochromic to achieve an adjustable transmittance.
  • the controllable color changing unit 11 may include a bottom electrode 111, an ion storage layer 112, an electrolyte layer 113, an electrochromic layer 114, and a top electrode 115 which are sequentially formed on the substrate 21. Both the bottom electrode 111 and the top electrode 115 can be made of a transparent material, and the transmittance of the light of the controllable color changing unit 11 can be increased.
  • the ion storage layer 112 is preferably formed of nickel oxide, and the electrolyte layer 113 is preferably a solid lithium salt such as lithium gallate or lithium niobate, and the electrochromic layer 114 is preferably tungsten trioxide or hafnium oxide.
  • the substrate 21 may be a substrate substrate based on an inorganic material such as a glass substrate or a quartz substrate, or may be a substrate substrate made of an organic material.
  • controllable color changing unit 11 is not limited to that shown in Fig. 2, and other structures known to those skilled in the art may be employed as long as it can achieve the purpose of adjusting the transmittance of light.
  • the black solid arrow A in Fig. 2 indicates that the following Figs. 4 to 8 are sectional views at the A-A position.
  • the mask described in the above embodiment may further include a substrate disposed on the substrate.
  • a plurality of thin film transistors 12 on 21 are used to generate a control signal based on an external signal. And each controllable The bottom electrode 111 of the color changing unit 11 is electrically connected to the drain 124 of each of the thin film transistors, respectively.
  • the thin film transistor 12 is electrically connected to the bottom transparent electrode 111 of the controllable color changing unit 11 through the drain 124 to input a control signal to the controllable color changing unit 11 to realize control of the controllable color changing unit 11.
  • the thin film transistor 12 controls the transmittance of the controllable color changing unit 11 to light.
  • an external circuit can be connected for inputting an external signal to the thin film transistor 12 in the mask to control the color-controllable unit 11 Transmittance to light.
  • the mask described in the above embodiment may further include a passivation layer 22 formed on the thin film transistor 12 and the plurality of controllable color changing units 11.
  • the passivation layer 22 material may be a transparent insulating material. It is preferably one or more of silicon nitride, a photosensitive resin or a non-photosensitive resin.
  • the passivation layer 22 functions as a protective mask, and the transparent passivation layer 22 material has a high light transmittance.
  • the patterns of the gate electrode 121, the gate insulating layer 122, the active layer 123, and the source/drain electrodes 124 of the thin film transistor 12 may be sequentially formed on the substrate 21. on.
  • the gate electrode 121, the gate insulating layer 122, the active layer 123, and the source/drain 124 sequentially formed on the substrate 21 constitute a thin film transistor 12, and the thin film transistor 12 is disposed such that the gate of the thin film transistor 12 can be 121 is formed in the same layer as the bottom electrode 111 of the controllable color changing unit 11, that is, the gate electrode 121 and the bottom electrode 111 can be simultaneously formed in one photolithography step, thereby saving process steps and thereby reducing the mask Production costs.
  • the material of the gate electrode 121 may be a transparent conductive material. It is preferably indium tin oxide or tin oxide, and the transparent conductive material has a high light transmittance.
  • the gate insulating layer 122 may be a transparent insulating material.
  • the transparent insulating material has a high light transmittance, preferably silicon nitride, a resin material or a non-resin material.
  • the materials of the bottom electrode 111 and the top electrode 115 may be transparent conductive materials.
  • each is indium tin oxide or tin oxide, and the transparent conductive material has a high light transmittance.
  • Embodiments of the present disclosure further provide a method of fabricating a mask for forming the mask described in the above embodiments.
  • the method comprises: forming a plurality of controllable color changing units arranged in an array on a substrate, the controllable color changing unit for adjusting the transmittance of the light according to the control signal.
  • the mask provided by the embodiment of the present disclosure includes a plurality of controllable color changing units arranged in an array. Because the controllable color changing unit adjusts its transmittance to light according to the control signal, the control signal is changed by inputting a certain control signal to the controllable color changing unit on the mask corresponding to the display area of the display panel.
  • the color unit is opaque to block light, thereby preventing light from damaging the liquid crystal; in the area corresponding to the sealant on the mask, the controllable color changing unit controls the signal, so that the controllable color changing unit is in a light transmitting state. Light can be irradiated on the sealant through the area to achieve the purpose of curing the sealant. Therefore, the controllable change of the range of the transparent region and the range of the opaque region on the same mask can be realized, and a mask can be used to cure the frame of the different sizes of the liquid crystal panel, thereby saving the display. The manufacturing cost of the panel.
  • the mask of the present embodiment is not limited to use in the manufacturing process of the display panel, and can be applied to other fields requiring a mask.
  • the embodiment of the present disclosure also provides a method of manufacturing a mask. As shown in FIG. 3 and FIG. 4 to FIG. 8 , the method specifically includes the following steps.
  • Step 301 providing a substrate 21.
  • Step 302 forming a first transparent metal film layer on the substrate 21, and forming a pattern including the gate electrode 121 and the bottom electrode 111 by a patterning process.
  • the first transparent metal film layer having a thickness of 100 nm to 300 nm is formed on the substrate 21, and the gate electrode 121 and the bottom electrode layer 111 are simultaneously formed by one patterning process, thereby increasing the light. Transmittance saves process steps.
  • Step 303 sequentially forming a first insulating film layer and a semiconductor film layer on the structure of the step 302, and forming the gate insulating layer 122 and the active layer 123 by a patterning process, respectively.
  • the first insulating film layer having a thickness of 300 nm to 500 nm and the semiconductor film layer having a thickness of 30 nm to 250 nm are sequentially formed, and the gate insulating layer 122 and the active layer are simultaneously formed by one patterning process.
  • Layer 123 saves process steps.
  • Step 304 Form a source/drain metal film layer on the structure of the step 303, and form a source and a drain 124 by a patterning process.
  • the source and drain electrodes 124 are electrode structures whose names are interchangeable.
  • a source-drain metal film layer having a thickness of 200 nm to 450 nm is formed, and the source-drain metal film layer is preferably a phase, an aluminum, an aluminum alloy, and a multilayer combination thereof, and the source and drain electrodes 124 are formed by one patterning process.
  • Step 305 sequentially forming an ion storage membrane layer, an electrolyte membrane layer, an electrochromic film layer, and a top transparent electrode film layer on the structure of the step 304, and forming an ion storage layer 112, an electrolyte layer 113, and an electrochromic layer by a patterning process. 114 and top electrode 115.
  • the bottom electrode 111, the ion storage layer 112, the electrolyte layer 113, the electrochromic layer 114, and the top electrode 115 constitute a controllable color changing unit 11.
  • This step is as shown in FIG. 7, and an ion storage membrane layer, an electrolyte membrane layer, and an electrochromic film are sequentially formed.
  • the bottom transparent electrode 111 formed in the step 302 forms the controllable color changing unit 11, and the pattern of the controllable color changing unit 11 is formed by two patterning processes, and the production step is single.
  • Step 306 forming a second insulating film layer on the structure of the step 305, and forming a passivation layer 22 by a patterning process.
  • the final step is to form a second insulating film layer having a thickness of 150 nm to 1500 nm, and a passivation layer 22 is formed by one patterning process to protect the mask plate manufactured in this embodiment.
  • each of the above film layers is in a preferred range. If the film layers are too thin, the electrical resistance is too large, which affects the introduction of electrical signals. If the film layers are too thick, the time of each production process is extended and the layers are made. When it is lapped, it is easy to break at the lap joint.
  • the above-mentioned methods for forming each film layer are usually deposited, coated, sputtered, etc.; the patterning process generally includes a process of photoresist coating, exposure, development, etching, photoresist stripping, and the like.
  • the mask provided by the embodiment of the present disclosure includes a plurality of controllable color changing units arranged in an array, because the controllable color changing unit adjusts its transmittance to light according to the control signal, so the mask in the display area of the corresponding display panel On the film panel, by inputting a certain control signal to the controllable color changing unit, the controllable color changing unit is opaque to block the light, thereby preventing the light from damaging the liquid crystal; in the area corresponding to the sealant on the mask board, The control signal is input to the controllable color changing unit, so that the controllable color changing unit is in a light transmitting state, and the light can be irradiated on the sealing frame glue through the area to achieve the purpose of curing the sealing frame glue. Therefore, the controllable change of the range of the transparent region and the range of the opaque region on the same mask can be realized, and a mask can be used to cure the frame of the different sizes of the liquid crystal panel, thereby saving the display.
  • the manufacturing cost of the panel because the control
  • the mask of the present embodiment is not limited to use in the manufacturing process of the display panel, and can be applied to other fields requiring a mask.

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

一种掩膜板（1）及其制造方法，掩膜板（1）包括阵列排布的多个可控变色单元（11），可控变色单元（11）用于根据控制信号调整对光线的透过率。该掩膜板（1）能实现在同一张掩膜板上透光区范围与不透光区范围的可控变化，可以使用一张掩膜板对不同尺寸的液晶面板进行封框胶固化，节约显示面板的制造成本。

Description

掩膜板及其制造方法 技术领域
本公开涉及一种掩膜板及其制造方法。 背景技术
液晶面板是液晶显示器的主要组件。液晶面板包括对盒成型的阵列基板 和彩膜基板， 以及填充在阵列基板和彩膜基板之间的液晶。 液晶面板四周涂 覆有封框胶以防止液晶面板内的液晶外泄。 对盒的具体步骤包括： 在阵型基 板或彩膜基板上涂敷封框胶用以形成一个包围的空间，以防止滴注的液晶随 意流动；将液晶填充在封框胶包围的区域内；再将阵型基板和彩膜基板对盒。 为防止封框胶向外扩散污染液晶， 造成产品质量问题， 需要将封框胶进行固 化处理。
现有的封框胶固化通常采用紫外光（UV Ultra Violet)照射固化， 但 UV 对液晶具有破坏作用， 因此在利用 UV对封框胶进行照射固化时需要制作一 张掩膜板， 并将其放置在液晶面板上。 掩膜板包括基板， 和基板上对应液晶 面板显示区的区域内形成的金属层的图形， 以遮挡 UV, 从而防止 UV破坏 液晶。 在基板上对应封框胶的区域没有金属层， 因此 UV光线能够透过该区 域照射在封框胶上， 以达到固化封框胶的目的。
在使用上述方法对封框胶进行固化时， 由于液晶面板的尺寸不同，所以 对于每一种尺寸的液晶面板都需要制造一张掩膜板，增加了液晶面板的制造 成本。 发明内容
本公开实施例提供了一种掩膜板及其制造方法，使用一张掩膜板对不同 尺寸的液晶面板进行封框胶固化， 节约了显示面板的制造成本。
为达到上述目的， 本公开的实施例采用如下技术方案：
一种掩膜板， 包括阵列排布的多个可控变色单元，所述可控变色单元用 于根据控制信号调整其对光线的透过率。
具体地， 掩膜板还包括基板， 所述可控变色单元设置在所述基板上， 且 所述可控变色单元包括在所述基板上依次形成的底层电极、 离子存储层、 电 解质层、 电致变色层及顶层电极。
为了实现可控变色单元的可控性，掩膜板还包括设置在所述基板上的多 个薄膜晶体管， 用于根据外部信号生成所述控制信号； 且每个所述可控变色 单元的底层电极分别与每个所述薄膜晶体管的漏极电连接。
为了保护掩膜板，掩膜板还包括形成于所述薄膜晶体管及所述多个可控 变色单元上的钝化层； 所述钝化层的材料是透明绝缘材料。
具体地，所述薄膜晶体管包括依次形成在所述基板上的栅极、栅极绝缘 层、 有源层及源 /漏极。
为了增加光的透过率， 所述栅极的材料为透明导电材料。
为了增加光的透过率， 所述栅极绝缘层的材料为透明绝缘材料。
为了增加光的透过率，所述底层电极及所述顶层电极的材料均为透明导 电材料。
一种掩膜板的制造方法，用于形成上述任一项所述的掩膜板，所述方法 包括： 形成阵列排布的多个可控变色单元， 所述可控变色单元用于根据控制 信号调整其对光线的透过率。
具体地， 在形成所述多个可控变色单元之前还包括： 提供一基板； 所述 形成所述阵列排布的多个可控变色单元具体步骤包括： 步骤 Sl、 在所述基 板上形成第一透明金属膜层，通过构图工艺形成薄膜晶体管的栅极及可控变 色单元的底层电极； 步骤 S2、 在完成步骤 SI的结构上依次形成第一绝缘膜 层、 半导体膜层， 通过构图工艺形成薄膜晶体管的栅极绝缘层和有源层； 步 骤 S3、 在完成步骤 S2的结构上形成源漏极金属膜层， 通过构图工艺形成薄 膜晶体管的源极和漏极； 步骤 S4、 在完成步骤 S3的结构上依次形成离子存 储膜层、 电解质膜层、 电致变色膜层及第二透明金属膜层， 通过构图工艺形 成可控变色单元的离子存储层、 电解质层、 电致变色层及顶层电极；； 步骤 S5、在完成步骤 S4的结构上形成第二绝缘膜层，通过构图工艺形成钝化层。
本公开实施例提供的掩膜板包括阵列排布的多个可控变色单元，因为可 控变色单元是根据控制信号来调整其对光线的透过率的，所以在对应显示面 板显示区的掩膜板上， 通过给可控变色单元输入一定的控制信号， 使可控变 色单元呈不透光状态， 以遮挡光线， 从而防止光线破坏液晶； 在掩膜板上对 应封框胶的区域， 通过给可控变色单元输入控制信号， 使可控变色单元呈透 光状态， 光线能够透过该区域照射在封框胶上， 以达到固化封框胶的目的。 从而就能实现在同一张掩膜板上透光区范围与不透光区范围的可控变化，也 就可以使用一张掩膜板对不同尺寸的液晶面板进行封框胶固化，节约了显示 面板的制造成本。 附图说明
为了更清楚地说明本公开或现有技术中的技术方案，下面将对本公开提 供的技术方案或现有技术描述中所需要使用的附图作筒单地介绍，显而易见 地，下面描述中的附图仅仅是本公开的技术方案的部分具体实施方式图示说 明， 对于本领域普通技术人员来讲， 在不付出创造性劳动的前提下， 还可以 根据这些附图获得其他的附图。
图 1为本公开实施例提供的一种掩膜板的结构示意图；
图 2为图 1所示的掩膜板中包含一完整可控变色单元的局部放大结构示 意图；
图 3为本公开实施例提供的掩膜板的一种制造方法的流程图； 和 图 4至图 8为本公开实施例提供的掩膜板的另一种制造方法的每一步骤 形成的结构在图 2中 A-A位置的剖面示意图。 具体实施方式
下面将结合本公开实施例中的附图，对本公开实施例中的技术方案进行 清楚、 完整地描述， 显然， 所描述的实施例仅仅是本公开一部分实施例， 而 不是全部的实施例。基于本公开中的实施例， 本领域普通技术人员在没有作 出创造性劳动前提下所获得的所有其他实施例， 都属于本公开保护的范围。
除非另作定义，此处使用的技术术语或者科学术语应当为本公开所属领 域内具有一般技能的人士所理解的通常意义。本公开专利申请说明书以及权 利要求书中使用的 "第一"、 "第二" 以及类似的词语并不表示任何顺序、 数 量或者重要性， 而只是用来区分不同的组成部分。 同样， "一个" 或者 "一" 等类似词语也不表示数量限制， 而是表示存在至少一个。 "连接" 或者 "相 连"等类似的词语并非限定于物理的或者机械的连接， 而是可以包括电性的 连接， 不管是直接的还是间接的。 "上"、 "下"、 "左"、 "右" 等仅用于表示 相对位置关系， 当被描述对象的绝对位置改变后， 则该相对位置关系也相应 地改变。 本公开实施例提供了一种掩膜板，如图 1所示，掩膜板 1包括阵列排布 的多个可控变色单元 11 , 可控变色单元 11用于根据控制信号调整其对光线 的透过率。
本公开实施例提供的掩膜板 1 包括阵列排布的多个可控变色单元 11。 因为可控变色单元 11根据控制信号来调整其对光线的透过率， 所以在对应 显示面板显示区的掩膜板上，通过给可控变色单元 11输入一定的控制信号， 使可控变色单元 11呈不透光状态， 以遮挡光线， 从而防止光线破坏液晶； 在掩膜板上对应封框胶的区域， 通过给可控变色单元 11输入控制信号， 使 可控变色单元 11呈透光状态， 光线能够透过该区域照射在封框胶上， 以达 到固化封框胶的目的。从而就能实现在同一张掩膜板上透光区范围与不透光 区范围的可控变化，也就可以使用一张掩膜板对不同尺寸的显示面板进行封 框胶固化， 节约了制造成本。
当然本实施例的掩膜板并不局限于在显示面板的制作过程中的使用，也 可以应用在其它需要掩膜板的领域。
如图 2及图 8所示， 上述实施例描述的掩膜板 1可以包括基板 21 , 以 及设置在基板 21上的可控变色单元 11。且可控变色单元 11可以利用电致变 色的原理来实现透过率可调。 具体地， 可控变色单元 11可以包括在基板 21 上依次形成的底层电极 111、 离子存储层 112、 电解质层 113、 电致变色层 114及顶层电极 115。 底层电极 111及顶层电极 115均可以使用透明材料制 成， 能够增加可控变色单元 11 的光线的透过率。 在外加电场的作用下可控 变色单元 11发生稳定、 可逆的颜色变化的现象， 在外观上表现为颜色和透 明度的可逆变化。 离子存储层 112优选地由氧化镍形成， 电解质层 113优选 地为铣酸锂或钽酸锂等固态锂盐， 电致变色层 114优选地为三氧化钨或氧化 铱。
上述基板 21可以是玻璃基板、 石英基板等基于无机材料的村底基板， 也可以是采用有机材料的村底基板。
当然， 可控变色单元 11的结构并不限于图 2所示， 也可以采用本领域 技术人员所知的其它结构， 只要其可以实现对光线的透过率可调的目的。
图 2中黑色实心箭头 A表示下述图 4至图 8是在 A-A位置的剖面图。 如图 2及图 8所示， 上述实施例描述的掩膜板还可以包括设置在基板
21上的多个薄膜晶体管 12, 用于根据外部信号生成控制信号。 且每个可控 变色单元 11的底层电极 111分别与每个薄膜晶体管的漏极 124电连接。 薄 膜晶体管 12通过漏极 124电连接可控变色单元 11的底层透明电极 111 , 以 向可控变色单元 11输入控制信号， 实现对可控变色单元 11的控制。 当外部 信号不同时， 薄膜晶体管 12控制可控变色单元 11对光线的透过率。 在使用 本实施例的掩膜板对显示面板中的封框胶进行固化时， 可连接一个外部电 路， 用于向上述掩膜板中的薄膜晶体管 12输入外部信号， 来控制可控变色 单元 11对光线的透过率。
如图 8 所示， 上述实施例描述的掩膜板还可以包括形成于薄膜晶体管 12及多个可控变色单元 11上的钝化层 22。 钝化层 22材料可以是透明绝缘 材料。 优选地是氮化硅、 感光树脂或非感光树脂中的一种或几种。 钝化层 22起保护掩膜板的作用， 且透明的钝化层 22材料具有较高的光透过率。
上述实施例描述的掩膜板中， 如图 8所示， 薄膜晶体管 12的栅极 121、 栅极绝缘层 122、有源层 123及源 /漏极 124的图形可以依次形成在所述基板 21上。 在所述基板 21上的依次形成的栅极 121、 栅极绝缘层 122、 有源层 123及源 /漏极 124, 构成薄膜晶体管 12, 如此设置薄膜晶体管 12, 可以使 薄膜晶体管 12的栅极 121与可控变色单元 11的底层电极 111在同一层形成， 也就是说， 栅极 121与底层电极 111可以在一个光刻步骤中同时形成， 由此 可以节省工艺步骤， 从而降低该掩膜板的生产成本。
上述实施例描述的掩膜板中，栅极 121的材料可以为透明导电材料。优 选地为氧化铟锡或氧化锡， 透明导电材料具有较高的光透过率。
上述实施例描述的掩膜板中，栅极绝缘层 122可以为透明绝缘材料。优 选地为氮化硅、树脂材料或非树脂材料等， 透明绝缘材料具有较高的光透过 率。 上述实施例描述的掩膜板中， 底层电极 111及顶层电极 115的材料均可 以为透明导电材料。 优选地均为氧化铟锡或氧化锡， 透明导电材料具有较高 的光透过率。
本公开实施例又提供了一种掩膜板的制造方法，用于形成上述实施例描 述的掩膜板。 该方法包括： 在基板上形成阵列排布的多个可控变色单元， 可 控变色单元用于根据控制信号调整其对光线的透过率。
本公开实施例提供的掩膜板包括阵列排布的多个可控变色单元。因为可 控变色单元是根据控制信号来调整其对光线的透过率的，所以在对应显示面 板显示区的掩膜板上， 通过输入给可控变色单元一定的控制信号， 使可控变 色单元呈不透光状态， 以遮挡光线， 从而防止光线破坏液晶； 在掩膜板上对 应封框胶的区域， 通过输入给可控变色单元控制信号， 使可控变色单元呈透 光状态， 光线能够透过该区域照射在封框胶上， 以达到固化封框胶的目的。 从而就能实现在同一张掩膜板上透光区范围与不透光区范围的可控变化，也 就可以使用一张掩膜板对不同尺寸的液晶面板进行封框胶固化，节约了显示 面板的制造成本。
当然本实施例的掩膜板并不局限于在显示面板的制作过程中的使用，也 可以应用在其它需要掩膜板的领域。
作为上述实施例描述方法的进一步细化，本公开实施例还提供了一种掩 膜板的制造方法。 如图 3及图 4至图 8所示， 该方法具体包括如下步骤。
步骤 301、 提供一基板 21。
步骤 302、 在基板 21上形成第一透明金属膜层， 通过构图工艺形成包 括栅极 121及底层电极 111的图形。
该步骤如图 4所示， 先在基板 21上形成厚度为 100纳米到 300纳米的 第一透明金属膜层，并且经过一次构图工艺同时形成栅极 121及底层电极层 111 , 既增加了光线的透过率又节省了工艺步骤。
步骤 303、 在完成步骤 302的结构上依次形成第一绝缘膜层、 半导体膜 层， 并分别通过构图工艺形成栅极绝缘层 122和有源层 123。
该步骤如图 5所示，依次形成厚度为 300纳米至 500纳米的第一绝缘膜 层及厚度为 30纳米至 250纳米的半导体膜层， 通过一次构图工艺同时形成 栅极绝缘层 122和有源层 123 , 节省了工艺步骤。
步骤 304、 在完成步骤 303的结构上形成源漏极金属膜层， 通过构图工 艺形成源极和漏极 124。
该步骤如图 6所示， 源极和漏极 124是名称可相互互换的电极结构。形 成厚度为 200纳米到 450纳米的源漏极金属膜层，源漏极金属膜层优选地为 相、 铝、 铝合金及其多层组合， 通过一次构图工艺形成源极和漏极 124。
步骤 305、 在完成步骤 304的结构上依次形成离子存储膜层、 电解质膜 层、 电致变色膜层及顶层透明电极膜层，通过构图工艺形成离子存储层 112、 电解质层 113、 电致变色层 114及顶层电极 115。 底层电极 111、 离子存储层 112、 电解质层 113、 电致变色层 114及顶层电极 115构成可控变色单元 11。
该步骤如图 7所示， 依次形成离子存储膜层、 电解质膜层、 电致变色膜 层及顶层透明电极膜层， 通过一次构图工艺形成离子存储层 112、 电解质层
113、 电致变色层 114及顶层透明电极 115。再加上在步骤 302中形成的底层 透明电极 111即形成了可控变色单元 11 ,共通过了两次构图工艺形成了可控 变色单元 11的图形， 生产步骤筒单。
步骤 306、 在完成步骤 305的结构上形成第二绝缘膜层， 通过构图工艺 形成钝化层 22。
该步骤如图 8所示， 最后一步为形成厚度为 150纳米至 1500纳米的第 二绝缘膜层， 通过一次构图工艺形成钝化层 22, 以对本实施例制造的掩膜 板进行保护。
上述各膜层的厚度范围为优选范围， 若各膜层过薄， 会使电阻过大， 影 响电信号的导入； 若各膜层过厚， 又会延长各生产工艺的时间及使各膜层间 在搭接时在搭接处易发生断裂。上述的形成各膜层的方式通常有沉积、涂敷、 溅射等多种方式； 构图工艺通常包括光刻胶涂敷、 曝光、 显影、 刻蚀、 光刻 胶剥离等工艺。
本公开实施例提供的掩膜板包括阵列排布的多个可控变色单元，因为可 控变色单元是根据控制信号来调整其对光线的透过率的，所以在对应显示面 板显示区的掩膜板上， 通过输入给可控变色单元一定的控制信号， 使可控变 色单元呈不透光状态， 以遮挡光线， 从而防止光线破坏液晶； 在掩膜板上对 应封框胶的区域， 通过输入给可控变色单元控制信号， 使可控变色单元呈透 光状态， 光线能够透过该区域照射在封框胶上， 以达到固化封框胶的目的。 从而就能实现在同一张掩膜板上透光区范围与不透光区范围的可控变化，也 就可以使用一张掩膜板对不同尺寸的液晶面板进行封框胶固化，节约了显示 面板的制造成本。
当然本实施例的掩膜板并不局限于在显示面板的制作过程中的使用，也 可以应用在其它需要掩膜板的领域。
本公开实施例主要适用于掩膜曝光技术领域中掩膜板的设计与制造。 以上实施方式仅用于说明本公开， 而并非对本公开的限制，有关技术领 域的普通技术人员， 在不脱离本公开的精神和范围的情况下， 还可以做出各 种变化和变型， 因此所有等同的技术方案也属于本公开的范畴， 本公开的专 利保护范围应由权利要求限定。

Claims

权利要求书
1、 一种掩膜板， 其特征在于， 包括阵列排布的多个可控变色单元， 所 述可控变色单元用于根据控制信号调整其对光线的透过率。
2、 根据权利要求 1所述的掩膜板， 其特征在于， 还包括基板， 所述可 控变色单元设置在所述基板上，且所述可控变色单元包括在所述基板上依次 形成的底层电极、 离子存储层、 电解质层、 电致变色层及顶层电极。
3、 根据权利要求 2所述的掩膜板， 其特征在于， 还包括设置在所述基 板上的多个薄膜晶体管， 用于根据外部信号生成所述控制信号； 且每个所述 可控变色单元的底层电极分别与每个所述薄膜晶体管的漏极电连接。
4、 根据权利要求 3所述的掩膜板， 其特征在于， 还包括形成于所述薄 膜晶体管及所述多个可控变色单元上的钝化层；所述钝化层的材料是透明绝 缘材料。
5、 根据权利要求 3所述的掩膜板， 其特征在于， 所述薄膜晶体管包括 依次形成在所述基板上的栅极、 栅极绝缘层、 有源层及源 /漏极。
6、 根据权利要求 5所述的掩膜板， 其特征在于， 所述栅极的材料为透 明导电材料。
7、 根据权利要求 5所述的掩膜板， 其特征在于， 所述栅极绝缘层的材 料为透明绝缘材料。
8、 根据权利要求 2所述的掩膜板， 其特征在于， 所述底层电极及所述 顶层电极的材料均为透明导电材料。
9、 一种掩膜板的制造方法， 其特征在于， 用于形成权利要求 1 - 8任一 项所述的掩膜板， 所述方法包括：
形成阵列排布的多个可控变色单元，所述可控变色单元用于根据控制信 号调整其对光线的透过率。
10、根据权利要求 9所述的掩膜板的制造方法， 其特征在于， 在形成所 述多个可控变色单元之前还包括： 提供一基板；
所述形成阵列排布的多个可控变色单元包括：
步骤 Sl、 在所述基板上形成第一透明金属膜层， 通过构图工艺形成所 述薄膜晶体管的栅极及所述可控变色单元的底层电极；
步骤 S2、在完成步骤 S1的结构上依次形成第一绝缘膜层、半导体膜层， 通过构图工艺形成所述薄膜晶体管的栅极绝缘层和有源层；
步骤 S3、 在完成步骤 S2的结构上形成源漏极金属膜层， 通过构图工艺 形成所述薄膜晶体管的源极和漏极；
步骤 S4、在完成步骤 S3的结构上依次形成离子存储膜层、电解质膜层、 电致变色膜层及第二透明金属膜层，通过构图工艺形成所述可控变色单元的 离子存储层、 电解质层、 电致变色层及顶层电极； 以及
步骤 S5、 在完成步骤 S4的结构上形成第二绝缘膜层， 通过构图工艺形 成钝化层。
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CN112259594B (zh) * 2020-10-23 2024-05-07 京东方科技集团股份有限公司 色阻结构、显示面板及显示装置
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