WO2014156986A1 - Silicon single crystal production apparatus, and silicon single crystal production method - Google Patents
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- WO2014156986A1 WO2014156986A1 PCT/JP2014/057833 JP2014057833W WO2014156986A1 WO 2014156986 A1 WO2014156986 A1 WO 2014156986A1 JP 2014057833 W JP2014057833 W JP 2014057833W WO 2014156986 A1 WO2014156986 A1 WO 2014156986A1
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- 239000013078 crystal Substances 0.000 title claims abstract description 228
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 166
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 165
- 239000010703 silicon Substances 0.000 title claims abstract description 165
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 55
- 238000010438 heat treatment Methods 0.000 claims abstract description 50
- 230000004907 flux Effects 0.000 claims abstract description 25
- 239000007787 solid Substances 0.000 claims abstract description 18
- 239000007788 liquid Substances 0.000 claims abstract description 10
- 238000010521 absorption reaction Methods 0.000 claims description 22
- 230000002093 peripheral effect Effects 0.000 claims description 13
- 239000002994 raw material Substances 0.000 claims description 12
- 238000002844 melting Methods 0.000 claims description 4
- 230000008018 melting Effects 0.000 claims description 4
- 238000000034 method Methods 0.000 abstract description 44
- 238000005266 casting Methods 0.000 abstract description 13
- 238000010586 diagram Methods 0.000 description 4
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 4
- 238000001816 cooling Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 241001307241 Althaea Species 0.000 description 2
- 235000006576 Althaea officinalis Nutrition 0.000 description 2
- 238000002109 crystal growth method Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 235000001035 marshmallow Nutrition 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/006—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/003—Heating or cooling of the melt or the crystallised material
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
- H01L31/182—Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Definitions
- the present invention relates to a silicon single crystal production apparatus that produces a silicon single crystal by a casting method.
- the Czochralski (CZ) method and the floating zone (FZ) method are generally performed.
- CZ method polycrystalline silicon is melted in a crucible and pulled together with a seed crystal having an orientation desired to be produced to produce a single crystal.
- FZ method a seed crystal is disposed under a rod-shaped polycrystalline silicon, and a boundary portion between the seed crystal and the polycrystalline is melted by heating to generate a single crystal.
- Either method can produce high-quality silicon single crystals, but the equipment is expensive and the work process is cumbersome, making it unsuitable for large-scale products such as solar panels and mass production. Technology.
- a casting method is used to efficiently generate large silicon crystals used for solar panels and the like (see, for example, Patent Document 1).
- solid silicon can be melted in a crucible and cooled to produce a large amount of silicon crystals at low cost.
- this conventional casting method mainly produces polycrystals, a technique for efficiently producing a large amount of high-purity single crystals by the casting method is desired.
- Patent Document 2 discloses a technique for producing a silicon single crystal using a casting method.
- the technique shown in Patent Document 2 uses a further heater arranged on the wall of the crucible placed on the heat sink while extracting heat from the heat sink arranged on the bottom of the crucible where the seed crystal is arranged.
- a technique for generating a silicon single crystal by causing growth of a seed crystal in a side region by heating is disclosed.
- Patent Document 2 requires the seed crystal to have a size corresponding to the entire bottom surface of the crucible, which increases the cost and is very difficult to increase in size. End up. Also, if the seed crystal is made small, the seed crystal information is not transmitted to the portion where the seed crystal is not arranged, so that polycrystalline silicon is generated, resulting in high quality silicon. There is a problem that a single crystal cannot be produced.
- the present invention provides a silicon single crystal production apparatus capable of easily producing a high-quality and large-sized silicon single crystal using a casting method.
- a silicon single crystal production apparatus includes a crucible in which a single silicon single crystal seed crystal is held in a partial region of a bottom portion and solid and / or liquid silicon is held, and the crucible An endothermic part that absorbs heat from below the crucible including at least the seed crystal region, and a heating part that heats a peripheral region of the region cooled by the endothermic part.
- the heat flux vector A and the heat flux vector B by the heating unit are controlled while maintaining a relationship of A ⁇ B ⁇ 0.
- the relationship between the heat flux vector A by the heat absorption part and the heat flux vector B by the heating part is A ⁇ B ⁇ 0, that is, the direction of heat flow. Is controlled while maintaining the reverse relationship, it allows growth from the seed crystal in the upward direction and at the same time allows crystal growth from the seed to the lateral direction. In contrast, it is possible to reliably transmit seed crystal information and to produce a high-quality silicon single crystal with a minimum content of polycrystals.
- high-quality and large-sized silicon single crystals can be produced from a single small seed crystal in a simple work process using only a thermal control using a casting method, so mass production is performed with inexpensive equipment. There is an effect that it becomes possible.
- the endothermic part cools the inside of the crucible from the bottom part of the crucible, and at the same time, the peripheral part of the region where the heating part is cooled by the endothermic part is defined as the bottom part of the crucible. It heats with the heat source arrange
- the peripheral region of the region cooled by the endotherm is lowered from the bottom surface of the crucible while absorbing the region of the seed crystal of the silicon single crystal from the bottom portion of the crucible.
- the silicon single crystal generation apparatus includes a control unit that controls a heat flow rate of the heat absorption unit and the heating unit, and the control unit maintains at least a part of the silicon single crystal as a seed crystal in a solid state. As described above, the temperature of the seed crystal region is adjusted by controlling the heat flow rate of the heat absorption part and the heating part.
- the silicon single crystal production apparatus includes a control unit that controls a heat flow rate of the heat absorption unit and the heating unit, and the control unit is solidified by a growth surface of the silicon single crystal and a bottom surface of the crucible. Further, the heat flow rate of the heat absorption part and the heating part is controlled so that the angle of the silicon single crystal is maintained larger than 90 °.
- the angle of the solidified silicon single crystal formed by the growth surface of the silicon single crystal and the bottom surface of the crucible is maintained larger than 90 ° (that is, in the lateral direction). Since the solid / liquid interface of the growing silicon crystal is maintained at less than 90 degrees in the growth direction with respect to the bottom of the crucible), the heat flow rate of the endothermic part and the heated part is controlled so As a result, information can be transmitted to produce a high-quality silicon single crystal that does not contain polycrystals.
- the silicon single crystal production apparatus controls the heat flux of the heat absorption part and / or the heating part based on the temperature detection means for detecting the temperature at a predetermined location in the crucible and the detected temperature. Control means.
- the silicon single crystal production apparatus in order to detect the temperature of a predetermined location in the crucible and control the heat flux of the endothermic part and / or the heating part based on the detected temperature, It is possible to produce a high-quality silicon single crystal that does not contain polycrystals and to perform work efficiently.
- FIG. 2 shows a conventional general silicon crystal growth method.
- FIG. 2 (A) shows the state of silicon in the crucibles 3 and 4 at a certain moment
- FIG. 2 (B) shows the crucible 3 when the growth has progressed from the state of FIG. 2 (A) over time.
- the state of silicon in 4 is shown.
- FIG. 2 (A) it has been generally practiced to cool the liquid silicon melted in the crucibles 3 and 4 from the bottom of the crucibles 3 and 4 to grow crystals. If the cooling is continued as it is, the interface between the liquid silicon and the solid silicon changes as the silicon crystal grows as shown in FIG.
- FIG. 2B when a silicon crystal is grown by a conventional method, a region that cannot grow from a seed crystal of a silicon single crystal (a region indicated by a one-dot chain line in the drawing) is generated. The grown silicon crystal becomes polycrystalline.
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Abstract
Description
本実施形態に係るシリコン単結晶生成装置及び当該シリコン単結晶生成装置を用いたシリコン単結晶生成方法について、図1ないし図8を用いて説明する。本実施形態に係るシリコン単結晶生成装置は、主に太陽光パネルとして利用されているシリコン(Si)半導体の単結晶を鋳造法により製造するものである。 (First embodiment of the present invention)
A silicon single crystal generation apparatus according to this embodiment and a silicon single crystal generation method using the silicon single crystal generation apparatus will be described with reference to FIGS. The silicon single crystal production apparatus according to the present embodiment is for producing a silicon (Si) semiconductor single crystal mainly used as a solar panel by a casting method.
2 シリコン結晶
3-4 坩堝
5 台座
6 軸受台
7-11 断熱材
12-14 ヒータ
100 シリコン単結晶生成装置 DESCRIPTION OF
Claims (10)
- 底面部の一部の領域に単一のシリコン単結晶の種結晶が保持されると共に、固体及び/又は液体のシリコンが保持される坩堝と、
前記坩堝内のシリコン溶融液を少なくとも前記種結晶の領域を含んで前記坩堝の下方から吸熱する吸熱部と、
前記吸熱部により冷却される領域の周辺領域を加熱する加熱部とを備え、
前記吸熱部による熱流束のベクトルAと前記加熱部による熱流束のベクトルBとが、A×B<0の関係を保って制御されることを特徴とするシリコン単結晶生成装置。 A crucible in which a single silicon single crystal seed crystal is held in a partial region of the bottom portion and solid and / or liquid silicon is held;
An endothermic part that absorbs the silicon melt in the crucible including at least the seed crystal region from below the crucible;
A heating unit for heating a peripheral region of the region cooled by the heat absorbing unit,
A silicon single crystal generation apparatus, wherein a heat flux vector A by the heat absorption unit and a heat flux vector B by the heating unit are controlled while maintaining a relationship of A × B <0. - 請求項1に記載のシリコン単結晶生成装置において、
前記吸熱部が前記坩堝の底面部から前記坩堝内を冷却すると同時に、前記加熱部が前記吸熱部により冷却される領域の周辺領域を前記坩堝の底面部より下方に配設された熱源により加熱することを特徴とするシリコン単結晶生成装置。 The silicon single crystal production apparatus according to claim 1,
The endothermic part cools the inside of the crucible from the bottom part of the crucible, and at the same time, the heating part heats the peripheral area of the area cooled by the endothermic part by a heat source disposed below the bottom part of the crucible. A silicon single crystal production apparatus characterized by the above. - 請求項1又は2に記載のシリコン単結晶生成装置において、
前記吸熱部及び前記加熱部の熱流速を制御する制御手段を備え、
前記制御手段が、前記シリコン単結晶の少なくとも一部が種結晶として固体を維持するように、前記吸熱部及び前記加熱部の熱流速を制御して、前記種結晶の領域の温度を調整することを特徴とするシリコン単結晶生成装置。 In the silicon single crystal production apparatus according to claim 1 or 2,
Control means for controlling the heat flow rate of the heat absorption part and the heating part,
The control means adjusts the temperature of the seed crystal region by controlling the heat flow rate of the heat absorption part and the heating part so that at least a part of the silicon single crystal maintains a solid as a seed crystal. A silicon single crystal production apparatus characterized by the above. - 請求項1ないし3のいずれかに記載のシリコン単結晶生成装置において、
前記吸熱部及び前記加熱部の熱流速を制御する制御手段を備え、
前記制御手段が、前記シリコン単結晶の成長面及び前記坩堝の底面がなす固化された前記シリコン単結晶の角度が90°より大きく維持されるように前記吸熱部及び前記加熱部の熱流速を制御することを特徴とするシリコン単結晶生成装置。 In the silicon single crystal production | generation apparatus in any one of Claim 1 thru | or 3,
Control means for controlling the heat flow rate of the heat absorption part and the heating part,
The control means controls the heat flow rate of the heat absorption unit and the heating unit so that the angle of the solidified silicon single crystal formed by the growth surface of the silicon single crystal and the bottom surface of the crucible is maintained larger than 90 °. A silicon single crystal generation apparatus characterized by: - 請求項1ないし4のいずれかに記載のシリコン単結晶生成装置において、
前記坩堝内における所定箇所の温度を検出する温度検出手段と、
前記吸熱部及び前記加熱部の熱流速を制御する制御手段とを備え、
前記温度検出手段で検出された前記温度に基づいて、前記吸熱部及び/又は前記加熱部の熱流束が制御されることを備えることを特徴とするシリコン単結晶生成装置。 In the silicon single crystal production | generation apparatus in any one of Claim 1 thru | or 4,
Temperature detecting means for detecting the temperature of a predetermined location in the crucible;
Control means for controlling a heat flow rate of the heat absorption part and the heating part,
A silicon single crystal production apparatus comprising: controlling a heat flux of the endothermic part and / or the heating part based on the temperature detected by the temperature detecting means. - 坩堝内の底面部にシリコン単結晶の種結晶を投入し、生成されるシリコン結晶の原料となる固体のシリコンを投入する原料投入ステップと、
前記原料を加熱して溶融する溶融ステップと、
溶融した前記原料を少なくとも前記種結晶の領域を含んで前記坩堝の下方から吸熱すると同時に、当該吸熱領域の周辺領域を加熱してシリコン結晶を生成する結晶生成ステップとを含み、
前記結晶生成ステップが、前記吸熱による熱流束のベクトルAと前記加熱による熱流束のベクトルBとが、A×B<0の関係を保って実行されることを特徴とするシリコン単結晶生成方法。 A raw material charging step of charging a seed crystal of silicon single crystal into the bottom part in the crucible and charging solid silicon as a raw material of the generated silicon crystal;
A melting step of heating and melting the raw material;
A crystal generating step of generating silicon crystals by heating the peripheral region of the endothermic region simultaneously with absorbing heat from below the crucible including at least the seed crystal region of the melted raw material,
A method for producing a silicon single crystal, wherein the crystal production step is executed while maintaining a relationship of A × B <0 between a heat flux vector A by heat absorption and a heat flux vector B by heating. - 請求項6に記載のシリコン単結晶生成方法において、
前記結晶生成ステップが、前記坩堝の底面部から前記坩堝内を冷却すると同時に、当該冷却される領域の周辺領域を前記坩堝の底面部より下方に配設された熱源により加熱することを特徴とするシリコン単結晶生成方法。 In the silicon single crystal production method according to claim 6,
In the crystal generation step, the inside of the crucible is cooled from the bottom surface of the crucible, and at the same time, the peripheral region of the cooled region is heated by a heat source disposed below the bottom surface of the crucible. Silicon single crystal production method. - 請求項6又は7に記載のシリコン単結晶生成方法において、
前記結晶生成ステップが、前記シリコン単結晶の少なくとも一部が種結晶として固体を維持するように、前記吸熱及び前記加熱の熱流速を制御して、前記種結晶の領域の温度を調整することを特徴とするシリコン単結晶生成方法。 In the silicon single crystal production method according to claim 6 or 7,
The crystal generation step adjusts the temperature of the region of the seed crystal by controlling the heat absorption and the heat flow rate of the heating so that at least a part of the silicon single crystal remains solid as a seed crystal. A method for producing a silicon single crystal. - 請求項6ないし8のいずれかに記載のシリコン単結晶生成方法において、
前記結晶生成ステップが、前記シリコン単結晶の成長面及び前記坩堝の底面がなす固化された前記シリコン単結晶の角度が90°より大きく維持されるように前記吸熱及び前記加熱の熱流速を制御して実行されることを特徴とするシリコン単結晶生成方法。 In the silicon single crystal production method according to any one of claims 6 to 8,
The crystal generation step controls the heat absorption and the heat flow rate of the heating so that the angle of the solidified silicon single crystal formed by the growth surface of the silicon single crystal and the bottom surface of the crucible is maintained larger than 90 °. A method for producing a silicon single crystal characterized by - 請求項6ないし9のいずれかに記載のシリコン単結晶生成方法において、
前記結晶生成ステップが、前記坩堝内の所定箇所で検出された温度に基づいて、前記吸熱及び/又は前記加熱の熱流束を制御して実行されることを特徴とするシリコン単結晶生成方法。 In the silicon single crystal production method according to any one of claims 6 to 9,
A method for producing a silicon single crystal, wherein the crystal production step is executed by controlling the heat absorption and / or the heat flux of the heating based on a temperature detected at a predetermined location in the crucible.
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CN105143524A (en) | 2015-12-09 |
JPWO2014156986A1 (en) | 2017-02-16 |
JP6384921B2 (en) | 2018-09-05 |
TW201445015A (en) | 2014-12-01 |
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