CN105143524A - Silicon single crystal production apparatus, and silicon single crystal production method - Google Patents
Silicon single crystal production apparatus, and silicon single crystal production method Download PDFInfo
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- CN105143524A CN105143524A CN201480018182.3A CN201480018182A CN105143524A CN 105143524 A CN105143524 A CN 105143524A CN 201480018182 A CN201480018182 A CN 201480018182A CN 105143524 A CN105143524 A CN 105143524A
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- 239000013078 crystal Substances 0.000 title claims abstract description 200
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 157
- 239000010703 silicon Substances 0.000 title claims abstract description 157
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 156
- 238000004519 manufacturing process Methods 0.000 title abstract description 4
- 238000010438 heat treatment Methods 0.000 claims abstract description 42
- 230000004907 flux Effects 0.000 claims abstract description 40
- 238000000034 method Methods 0.000 claims abstract description 35
- 239000007787 solid Substances 0.000 claims abstract description 18
- 239000007788 liquid Substances 0.000 claims abstract description 10
- 230000008520 organization Effects 0.000 claims description 15
- 239000002994 raw material Substances 0.000 claims description 14
- 238000002844 melting Methods 0.000 claims description 13
- 230000008018 melting Effects 0.000 claims description 13
- 238000010521 absorption reaction Methods 0.000 claims description 12
- 238000001816 cooling Methods 0.000 claims description 9
- 238000007711 solidification Methods 0.000 claims description 4
- 230000008023 solidification Effects 0.000 claims description 4
- 238000005266 casting Methods 0.000 abstract description 13
- 230000000694 effects Effects 0.000 description 6
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 4
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 4
- 241001307241 Althaea Species 0.000 description 3
- 235000006576 Althaea officinalis Nutrition 0.000 description 3
- 235000001035 marshmallow Nutrition 0.000 description 3
- 238000002109 crystal growth method Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000012774 insulation material Substances 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/006—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/003—Heating or cooling of the melt or the crystallised material
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
- H01L31/182—Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
Provided is a silicon single crystal production apparatus, whereby it becomes possible to produce a silicon single crystal having high quality and a large size readily employing a casting method. The apparatus is equipped with: a crucible (3, 4) in which a seed crystal of a silicon single crystal is held on a part of the bottom surface thereof and in which solid and/or liquid silicon is also held; a heat-absorbing section in which heat generated on a region on which the seed crystal of the silicon single crystal is placed in the crucible (3, 4) can be absorbed through the bottom surface of the crucible (3, 4); and a heating section in which a region surrounding the region to be cooled by the heat-absorbing section can be heated with a heat source arranged below the bottom surface of the crucible (3, 4). In the apparatus, the vector (A) of a heat flux generated by the heat-absorbing section and the vector (B) of a heat flux generated by the heating section are controlled while keeping the relationship represented by the formula: A*B < 0.
Description
Technical field
The present invention relates to the silicon single crystal generating apparatus etc. utilizing casting to generate silicon single crystal.
Background technology
As the method for the monocrystalline of generation silicon, usually carry out caochralski (CZ) method, molten (FZ) method in suspension zone.In CZ method, by melting polysilicon in crucible, jointly lift with the crystal seed in the orientation for making and generate monocrystalline.In addition, in FZ method, crystal seed is disposed in the bottom of rod-like polycrystal silicon, and makes the interface portion melting of crystal seed and polycrystalline generate monocrystalline by heating.In either method, all can generate the silicon single crystal of high-quality, but apparatus expensive, and flow chart is loaded down with trivial details, is to be not suitable for middle large-scale silicon crystal, the mass-produced technology used such as solar panel.
Therefore, generate the middle large-scale silicon crystal used such as solar panel well in order to efficiency, use casting (for example, referring to patent documentation 1).In casting, by solid silicon melting in crucible, cooling, thus can in a large number and generate silicon crystal at an easy rate.But, in casting in the past, mainly generate polycrystalline, therefore expect to utilize casting efficiency to produce the technology of highly purified monocrystalline well in a large number.
About above-mentioned problem, Patent Document 2 discloses the technology utilizing casting to generate silicon single crystal.In the technology shown in patent documentation 2, disclose following technology: extract heat out from the scatterer (heatsink) in the crucible bottom surface configuration being configured with crystal seed, while utilize the further well heater of the wall portion being configured at crucible placed on scatterer to heat, thus by causing the growth of crystal seed to generate silicon single crystal in lateral region.
Prior art document
Patent documentation
Patent documentation 1: Japanese Unexamined Patent Publication 2003-267717 publication
Patent documentation 2: Japanese Unexamined Patent Application Publication 2011-528308 publication
Summary of the invention
Invent problem to be solved
But, for the technology shown in patent documentation 2, need the size of the whole bottom surface making the sizableness of crystal seed in crucible, thus the increase of cost can be caused and make maximization become very difficult, in addition, if make crystal seed diminish, then for the part not configuring crystal seed, there is following problem: the information that crystal seed can not be passed on owing to not having crystal seed, therefore can generate polysilicon and the silicon single crystal of high-quality can not be generated.
In addition, exist and the bottom surface of crucible is divided into multiple block, and arrange at each block the method that crystal seed and carrying out grows, but the growth existed between each block clashes and produces the problem of defect.
The invention provides and casting can be utilized easily to generate high-quality and the silicon single crystal generating apparatus of large-scale silicon single crystal.
For solving the method for problem
Silicon single crystal generating apparatus of the present invention possesses crucible, endothermic section and heating part; Keep the crystal seed of single silicon single crystal in a part of region of the bottom surface sections of described crucible, and keep the silicon of solid and/or liquid; Absorb heat from the below comprising at least above-mentioned seed region and above-mentioned crucible to the silicon melt in above-mentioned crucible in described endothermic section; The neighboring area of described heating part to the region cooled by above-mentioned endothermic section is heated; Wherein, control the vectorial A of the heat flux caused by above-mentioned endothermic section and the vectorial B of the heat flux caused by above-mentioned heating part, keep the relation of A × B < 0.
Like this, in silicon single crystal generating apparatus of the present invention, the vectorial B of the vectorial A and the heat flux caused by heating part that control the heat flux caused by endothermic section is to keep the relation of A × B < 0, namely the flow direction keeping heat is reverse relation, thus play following effect: while carrying out the growth from crystal seed upward direction, also the crystal growth from crystal seed to transverse direction can be realized, even little crystal seed, also the information of crystal seed can be passed on exactly to whole directions of growth, thus the silicon single crystal polycrystalline contained being suppressed to minimal high-quality can be generated.
In addition, by the simple flow chart utilizing casting only to carry out thermal control, high-quality can be generated and large-scale silicon single crystal by single little crystal seed, therefore achieve and can carry out mass-produced effect with the equipment of cheapness.
In silicon single crystal generating apparatus of the present invention, above-mentioned endothermic section cools from the bottom surface sections of above-mentioned crucible in above-mentioned crucible, and simultaneously above-mentioned heating part utilizes the neighboring area of thermal source to the region cooled by above-mentioned endothermic section be disposed in than the bottom surface sections more below of above-mentioned crucible to heat.
Like this, in silicon single crystal generating apparatus of the present invention, while absorb heat from the bottom surface sections of crucible to the seed region of silicon single crystal, while utilize be disposed in than crucible bottom surface more below the neighboring area of thermal source to the region cooled by this heat absorption heat, thus achieve following effect: while carrying out the growth from crystal seed upward direction, also can realize the crystal growth to transverse direction, thus can be generated not containing the silicon single crystal of the high-quality of polycrystalline by little crystal seed.
Silicon single crystal generating apparatus of the present invention possesses the controlling organization of the heat flux controlling above-mentioned endothermic section and above-mentioned heating part, above-mentioned controlling organization controls the heat flux of above-mentioned endothermic section and above-mentioned heating part, adjust the temperature of above-mentioned seed region, make to maintain above-mentioned silicon single crystal at least partially for solid is used as crystal seed.
Like this, in silicon single crystal generating apparatus of the present invention, control the heat flux of endothermic section and heating part, the temperature of adjustment seed region, make to maintain silicon single crystal at least partially for solid is used as crystal seed, thus achieve following effect: can by accurately carrying out generating from the communicating information of crystal seed the silicon single crystal of high-quality not containing polycrystalline.
Silicon single crystal generating apparatus of the present invention possesses the controlling organization of the heat flux controlling above-mentioned endothermic section and above-mentioned heating part, above-mentioned controlling organization controls the heat flux of above-mentioned endothermic section and above-mentioned heating part, thus the angle of above-mentioned silicon single crystal after the solidification that formed of the bottom surface of the aufwuchsplate and above-mentioned crucible that maintain above-mentioned silicon single crystal is greater than 90 °.
Like this, in silicon single crystal generating apparatus of the present invention, control the heat flux of endothermic section and heating part, (namely the angle of the above-mentioned silicon single crystal after the solidification formed to make the maintenance aufwuchsplate of silicon single crystal and the bottom surface of above-mentioned crucible is greater than 90 °, along the interfacial phase of the solid/liquid of the silicon crystal of transverse direction growth the bottom surface of crucible maintained in the direction of growth and is less than 90 degree), therefore play following effect: can by accurately carrying out generating from the communicating information of crystal seed the silicon single crystal of the high-quality not containing polycrystalline.
Silicon single crystal generating apparatus of the present invention possesses temperature testing organization and controlling organization; Described temperature testing organization detects the temperature of the predetermined portion in above-mentioned crucible; Described controlling organization, based on the said temperature detected, controls the heat flux of above-mentioned endothermic section and/or above-mentioned heating part.
Like this, in silicon single crystal generating apparatus of the present invention, detect the temperature of the predetermined portion in crucible, and based on the temperature detected, control the heat flux of endothermic section and/or heating part, therefore following effect is played: can generate not containing the silicon single crystal of the high-quality of polycrystalline, efficiency can carry out operation well simultaneously.
Silicon single crystal generation method of the present invention comprises: the crystal seed dropping into silicon single crystal to the bottom surface sections in crucible, and the raw material dropping into the solid silicon of the raw material as the silicon crystal generated drops into step; Above-mentioned raw materials is carried out to the melting step of heating and melting; And the above-mentioned raw materials obtained melting from the below comprising at least above-mentioned seed region and above-mentioned crucible absorbs heat, meanwhile, the neighboring area of this heat sink region is heated to the crystal generation step generating silicon crystal; Wherein, the vectorial A of the heat flux caused by above-mentioned heat absorption is made to keep the relation of A × B < 0 with the vectorial B of the heat flux caused by above-mentioned heating.
About silicon single crystal generation method of the present invention, in above-mentioned crystal generation step, cool from the bottom surface sections of above-mentioned crucible in above-mentioned crucible, simultaneously utilize be disposed in than above-mentioned crucible bottom surface sections more below the neighboring area of thermal source to the region of this cooling heat.
About silicon single crystal generation method of the present invention, in above-mentioned crystal generation step, control the heat flux of above-mentioned heat absorption and above-mentioned heating, adjust the temperature of above-mentioned seed region, make to maintain above-mentioned silicon single crystal at least partially for solid is used as crystal seed.
About silicon single crystal generation method of the present invention, in above-mentioned crystal generation step, implement the control of the heat flux to above-mentioned heat absorption and above-mentioned heating, the angle of the above-mentioned silicon single crystal formed to make the bottom surface of the aufwuchsplate and above-mentioned crucible that maintain above-mentioned silicon single crystal is greater than 90 °.
About silicon single crystal generation method of the present invention, in above-mentioned crystal generation step, based on the temperature that the predetermined portion in above-mentioned crucible detects, implement the control of the heat flux to above-mentioned heat absorption and/or above-mentioned heating.
Accompanying drawing explanation
Fig. 1 is the sectional view of the silicon single crystal generating apparatus of the 1st embodiment.
Fig. 2 is the figure of the general crystal growth method represented in the past.
Fig. 3 is the figure of the crystal growth representing the silicon utilizing the silicon single crystal generating apparatus of the 1st embodiment to realize.
Fig. 4 represents to carry out the example heated and the schematic diagram being carried out the example heated by the thermal source in the silicon single crystal generating apparatus of the 1st embodiment by thermal source in the past.
Fig. 5 is the schema of the order of the silicon single crystal generation method representing the 1st embodiment.
Fig. 6 is the figure of the process of growth represented when utilizing the silicon single crystal generation method of the 1st embodiment that silicon single crystal is grown.
Fig. 7 represents the monocrystalline of the silicon utilizing the silicon single crystal generation method of the 1st embodiment to generate and the figure of polycrystalline distribution.
Fig. 8 is the figure of the relation representing between crucible bottom surface and aufwuchsplate, silicon melt is formed in the silicon single crystal generation method of the 1st embodiment angle and growth time.
Embodiment
Below, embodiments of the present invention are described.The present invention can implement with multiple different form.In addition, in the entirety of present embodiment, identical element gives same-sign.
1st embodiment of the present invention
For the silicon single crystal generating apparatus of present embodiment and the silicon single crystal generation method of this silicon single crystal generating apparatus of use, Fig. 1 to Fig. 8 is utilized to be described.The silicon single crystal generating apparatus of present embodiment utilizes casting manufacture to be mainly used as the monocrystalline of silicon (Si) semi-conductor of solar panel.
About the casting that the silicon single crystal generating apparatus of present embodiment uses, the silicon raw material of solid is dropped into also at high temperature melting in crucible, utilize the liquid silicon of method to this melting of regulation to cool, solidify, thus obtain the silicon crystal of target shape.Usually, utilize this casting to solidify and the silicon that obtains is polycrystalline, but by advance the kind of monocrystalline being configured at the bottom of crucible, and carry out the following method of cooling be shown specifically, the monocrystalline of the few high-quality of defect can be generated.
The sectional view of Fig. 1 represents an example of the silicon single crystal generating apparatus of present embodiment.In silicon single crystal generating apparatus 100, partially cured as the liquid silicon 1 and one for holding melting and crucible 3,4 that the is container of the silicon crystal 2 generated is placed in pedestal 5, to be connected with pedestal 5 and the bearing stand 6 supporting this pedestal 5 is adapted to and can moves up and down.Crucible 3,4, the surrounding of pedestal 5 and bearing stand 6 is equipped with well heater 12-14, the temperature of carrying out heating and cooling controls.At the most peripheral of silicon single crystal generating apparatus 100, be equipped with the heat insulation material 7-11 for isolated heat, it is formation that the is isolated and movement of outside heat energy.
Fig. 2 represents general crystal growth method in the past.Fig. 2 (A) represents the state of the silicon in certain flashy crucible 3,4, Fig. 2 (B) represent from the state of Fig. 2 (A) through after a while and grow time crucible 3,4 in the state of silicon.In the past, as shown in Fig. 2 (A), generally to carry out, among crucible 3,4, the liquid silicon of melting was made its crystal growth from the bottom coohng of crucible 3,4.Then, if continue cooling in this condition, then, as shown in Fig. 2 (B), the interface of liquid silicon and solid silicon can the change along with the growth of silicon crystal.Can be clear and definite from Fig. 2 (B), if utilize method in the past to carry out the growth of silicon crystal, then can produce silicon single crystal cannot from the region of seeded growth (region shown in the long and short dash line figure), and the silicon crystal grown in this region can become polycrystalline.
In order to eliminate this poly-region, such as, the crystal seed of monocrystalline can be considered to be configured in the mode of the whole bottom surface covering crucible 3,4, but the size of crystal seed can become very large, from the viewpoint of cost, maximizes and also has difficulty.In addition, when carrying out crystal growth with little crystal seed, as shown in Fig. 2 (A), the angle (angle that solid single crystal silicon is formed) that the interface of crystal growth and the bottom surface of crucible 3,4 are formed is less than 90 degree, therefore, as mentioned above, can produce silicon single crystal cannot from the region of seeded growth.In order to solve such problem, in the present embodiment, the neighboring area in the region that the bottom surface from crucible 3,4 cools is heated from the bottom surface of crucible 3,4 simultaneously.
Fig. 3 is the figure of the crystal growth representing the silicon utilizing the silicon single crystal generating apparatus of present embodiment to realize.Fig. 3 (A) represents the state of the silicon in certain flashy crucible 3,4, Fig. 3 (B) represent from the state of Fig. 3 (A) through after a while and grow time crucible 3,4 in the state of silicon.As shown in Fig. 3 (A), in the present embodiment, while the seed region of silicon single crystal of the bottom surface being configured at crucible 3,4 is cooled, the neighboring area in the region of this cooling is heated simultaneously.
Thus, as shown in Fig. 3 (A), the interface of liquid silicon and solid silicon is to form the growth that slightly ellipsoidal mode carries out silicon single crystal.Namely, the angle (angle that solid single crystal silicon is formed) that the interface of crystal growth and the bottom surface of crucible 3,4 are formed is greater than 90 degree, as shown in Fig. 3 (B), even carry out situation about growing with little crystal seed, also not producing the such silicon single crystal of Fig. 2 (B) cannot from the region of seeded growth, even the growth of transverse direction, the silicon single crystal of high-quality also can be generated by the information of correct reception and registration crystal seed.
Fig. 4 represents the figure being carried out the example heated by thermal source.Fig. 4 (A) represents the example in the past carrying out from the side of crucible heating, and Fig. 4 (B) represents the example carrying out from the bottom surface of the crucible of present embodiment heating.As can be seen from Figure 4, in crucible bottom, the heat flux a towards thermal source A is downward, and carry out the heat flux b of self-heat power B obliquely, therefore the pass of heat flux a and b is a × b >=0.That is, as shown in Fig. 4 (A), between the interface of crystal growth and the bottom surface of crucible 3,4, the angle that silicon single crystal is formed is less than 90 degree, as mentioned above, can produce the region of grown silicon polycrystalline.
On the other hand, for the situation of the crystal growth of the silicon utilizing the silicon single crystal generating apparatus of present embodiment to realize, as shown in Fig. 4 (B), the direction of heat flux a and heat flux b, therefore forms the relation of a × b < 0 each other in the other direction.That is, between the interface of crystal growth and the bottom surface of crucible 3,4, the angle that silicon single crystal is formed is greater than 90 degree, as mentioned above, can be generated the silicon single crystal of high-quality by the information of correct reception and registration crystal seed.
Next, the silicon single crystal generation method for the silicon single crystal generating apparatus using present embodiment is described.Fig. 5 is the schema of the order of the silicon single crystal generation method representing present embodiment.First, in crucible 3,4, drop into the crystal seed of silicon single crystal, and be configured at the bottom surface sections (S1) of crucible 3,4.Be explained, now, crystal seed preferred disposition in the immediate vicinity of the bottom surface sections of crucible 3,4, but without the need near centered by certain, as long as the position of absorbing heat can be carried out in endothermic section.Such as, when the bottom surface sections of crucible 3,4 is rectangle, configurable in arbitrary angle.In addition, preferably crystal seed be not divided into many parts and be configured at multiple region, preferably a crystal seed being positioned over a region.If be configured with crystal seed, then in crucible 3,4, drop into the raw material (S2) as the silicon single crystal that will generate.Well heater 12-14 is utilized to make silicon raw materials melt (S3) in crucible 3,4.Now, with maintain crystal seed at least partially for the mode of solid heats.
If raw materials melt, then from the bottom surface sections of crucible 3,4, seed region is cooled, and the neighboring area in the region of this cooling is heated simultaneously, while make raw material solidify (S4).Now, from the thermal source A of the bottom surface sections of crucible 3,4, seed region is absorbed heat, utilize than crucible 3,4 bottom surface more below the neighboring area of thermal source B to the region of this cooling heat.Thus, the relation of the heat flux b of the heat flux a of thermal source A and thermal source B can be made to become a × b < 0, the angle (angle that silicon single crystal is formed) that the interface of crystal growth and the bottom surface of crucible 3,4 are formed is greater than 90 degree, can be generated the silicon single crystal of high-quality by the information of correct reception and registration crystal seed.In addition, now, by monitoring that the temperature of crucible 3,4 entirety carries out the control of heat flux.While the temperature monitoring crucible 3,4 entirety, stop heating and heat absorption (S5, S6) respectively with specific time point, thus complete the generation of silicon single crystal.Be explained, the stopping of heating and heat absorption controls according to the shape of crucible 3,4, the degree of depth of liquation.
Fig. 6 is the figure of the process of growth represented when utilizing the method for above-mentioned explanation to make monocrystalline silicon growing.From Fig. 6 (A), silicon crystal grows successively, finally grows to Fig. 6 (H), terminates the generation of silicon single crystal.As can be seen from Figure 6, grow and carry out centered by crystal seed, with radial (marsh-mallow (marshmallow) shape, sphere, ellipsoid shaped), finally as shown in Figure 7, although a part forms polycrystalline, major part can be made to be generated as monocrystalline.
Fig. 8 be growth time when utilizing aforesaid method to make monocrystalline silicon growing and between the interface of crystal growth and the bottom surface of crucible 3,4 figure of the relation of the angle that the fused solution of silicon raw material is formed.(A) ~ (H) of each stain (a) ~ (h) corresponding diagram 6 in figure.In each operation, the temperature based on crucible entirety controls heat absorption and heating, thus makes the angle (being equivalent to the longitudinal axis in Fig. 8) that fused solution is formed between the interface of crystal growth and the bottom surface of crucible 3,4 be less than 90 degree.That is, the angle that between the known interface at crystal growth and crucible bottom surface, silicon crystal is formed remains more than 90 degree, and the growth of crystal is carried out with marsh-mallow shape (sphere, ellipsoid shaped).
Like this, according to silicon single crystal generating apparatus of the present invention and the silicon single crystal generation method using this device, the crystal growth in upper direction can not only be carried out from crystal seed, and the crystal growth of transverse direction can be carried out, thus can be generated not containing the silicon single crystal of the high-quality of polycrystalline by little crystal seed.In addition, utilize casting only to carry out the simple flow chart of thermal control from crucible bottom surface, just can generate high-quality and large-scale silicon crystal, therefore, it is possible to produce in a large number with the carrying out of the equipment of cheapness.
Nomenclature
1 liquid silicon
2 silicon crystal
3-4 crucible
5 pedestals
6 bearing stands
The heat insulation material of 7-11
12-14 well heater
100 silicon single crystal generating apparatus
Claims (10)
1. a silicon single crystal generating apparatus, is characterized in that, possesses:
Crucible, it keeps the crystal seed of single silicon single crystal in a part of region of bottom surface sections, and keeps the silicon of solid and/or liquid,
Endothermic section, it absorbs heat from the below comprising at least described seed region and described crucible to the silicon melt in described crucible, and
Heating part, it heats the neighboring area in the region cooled by described endothermic section;
Further, the vectorial A controlling the heat flux caused by described endothermic section keeps the relation of A × B < 0 with the vectorial B of the heat flux caused by described heating part.
2. silicon single crystal generating apparatus according to claim 1, it is characterized in that, described endothermic section cools from the bottom surface sections of described crucible in described crucible, meanwhile, described heating part utilizes the neighboring area of thermal source to the region cooled by described endothermic section be disposed in than the bottom surface sections more below of described crucible to heat.
3. silicon single crystal generating apparatus according to claim 1 and 2, is characterized in that, possesses the controlling organization of the heat flux controlling described endothermic section and described heating part,
Described controlling organization controls the heat flux of described endothermic section and described heating part to adjust the temperature of described seed region, thus maintain described silicon single crystal at least partially for solid is used as crystal seed.
4. silicon single crystal generating apparatus according to any one of claim 1 to 3, is characterized in that, possesses the controlling organization of the heat flux controlling described endothermic section and described heating part,
Described controlling organization controls the heat flux of described endothermic section and described heating part, thus the angle of described silicon single crystal after the solidification that formed of the bottom surface of the aufwuchsplate and described crucible that maintain described silicon single crystal is greater than 90 °.
5. silicon single crystal generating apparatus according to any one of claim 1 to 4, is characterized in that possessing:
Temperature testing organization, it detects the temperature of the predetermined portion in described crucible, and
Controlling organization, it controls the heat flux of described endothermic section and described heating part;
Based on the described temperature detected by described temperature testing organization, control the heat flux of described endothermic section and/or described heating part.
6. a silicon single crystal generation method, is characterized in that, comprising:
Raw material drops into step, drops into the crystal seed of silicon single crystal to the bottom surface sections in crucible, and drops into the solid silicon of the raw material as the silicon crystal that will generate,
Melting step, carries out heating and melting to described raw material, and
Crystal generation step, the described raw material obtained melting from the below comprising at least described seed region and described crucible absorbs heat, and meanwhile, carries out heating to generate silicon crystal to the neighboring area of this heat sink region;
In described crystal generation step, the vectorial A of the heat flux caused by described heat absorption is made to keep the relation of A × B < 0 with the vectorial B of the heat flux caused by described heating.
7. silicon single crystal generation method according to claim 6, is characterized in that,
In described crystal generation step, cool from the bottom surface sections of described crucible in described crucible, meanwhile, utilize be disposed in than described crucible bottom surface sections more below the neighboring area of thermal source to the region of this cooling heat.
8. the silicon single crystal generation method according to claim 6 or 7, is characterized in that,
In described crystal generation step, control the heat flux of described heat absorption and described heating to adjust the temperature of described seed region, thus maintain described silicon single crystal at least partially for solid is used as crystal seed.
9. the silicon single crystal generation method according to any one of claim 6 to 8, is characterized in that,
In described crystal generation step, implement to control to the heat flux of described heat absorption and described heating, thus the angle of described silicon single crystal after the solidification that formed of the bottom surface of the aufwuchsplate and described crucible that maintain described silicon single crystal is greater than 90 °.
10. the silicon single crystal generation method according to any one of claim 6 to 9, is characterized in that,
In described crystal generation step, based on the temperature that the predetermined portion in described crucible detects, implement the control of the heat flux to described heat absorption and/or described heating.
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| JP2013061698 | 2013-03-25 | ||
| JP2013-061698 | 2013-03-25 | ||
| PCT/JP2014/057833 WO2014156986A1 (en) | 2013-03-25 | 2014-03-20 | Silicon single crystal production apparatus, and silicon single crystal production method |
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| CN105143524A true CN105143524A (en) | 2015-12-09 |
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| JP (1) | JP6384921B2 (en) |
| CN (1) | CN105143524A (en) |
| TW (1) | TW201445015A (en) |
| WO (1) | WO2014156986A1 (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109056062A (en) * | 2018-08-03 | 2018-12-21 | 湖南红太阳光电科技有限公司 | A kind of preparation method of casting monocrystalline silicon |
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| US3898051A (en) * | 1973-12-28 | 1975-08-05 | Crystal Syst | Crystal growing |
| CN201512416U (en) * | 2009-09-18 | 2010-06-23 | 南安市三晶阳光电力有限公司 | Bottom heating device for polysilicon ingot furnace |
| CN101755077A (en) * | 2007-07-20 | 2010-06-23 | Bp北美公司 | Methods and apparatuses for manufacturing cast silicon from seed crystals |
| CN202558970U (en) * | 2012-05-24 | 2012-11-28 | 天威新能源控股有限公司 | Single crystal like silicon ingot furnace |
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| US4256530A (en) * | 1978-12-07 | 1981-03-17 | Crystal Systems Inc. | Crystal growing |
| JPH11310496A (en) * | 1998-02-25 | 1999-11-09 | Mitsubishi Materials Corp | Production of silicon ingot having unidirectionally solidified texture and apparatus therefor |
| JP2000327487A (en) * | 1999-05-24 | 2000-11-28 | Mitsubishi Materials Corp | Method and apparatus for producing crystalline silicon |
| US20080257254A1 (en) * | 2007-04-17 | 2008-10-23 | Dieter Linke | Large grain, multi-crystalline semiconductor ingot formation method and system |
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2014
- 2014-03-20 CN CN201480018182.3A patent/CN105143524A/en active Pending
- 2014-03-20 JP JP2015508425A patent/JP6384921B2/en not_active Expired - Fee Related
- 2014-03-20 WO PCT/JP2014/057833 patent/WO2014156986A1/en active Application Filing
- 2014-03-24 TW TW103110853A patent/TW201445015A/en unknown
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3898051A (en) * | 1973-12-28 | 1975-08-05 | Crystal Syst | Crystal growing |
| CN101755077A (en) * | 2007-07-20 | 2010-06-23 | Bp北美公司 | Methods and apparatuses for manufacturing cast silicon from seed crystals |
| CN201512416U (en) * | 2009-09-18 | 2010-06-23 | 南安市三晶阳光电力有限公司 | Bottom heating device for polysilicon ingot furnace |
| CN202558970U (en) * | 2012-05-24 | 2012-11-28 | 天威新能源控股有限公司 | Single crystal like silicon ingot furnace |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109056062A (en) * | 2018-08-03 | 2018-12-21 | 湖南红太阳光电科技有限公司 | A kind of preparation method of casting monocrystalline silicon |
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| Publication number | Publication date |
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| JP6384921B2 (en) | 2018-09-05 |
| TW201445015A (en) | 2014-12-01 |
| WO2014156986A1 (en) | 2014-10-02 |
| JPWO2014156986A1 (en) | 2017-02-16 |
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